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WO2021035692A1 - Écran d'affichage et dispositif terminal - Google Patents

Écran d'affichage et dispositif terminal Download PDF

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Publication number
WO2021035692A1
WO2021035692A1 PCT/CN2019/103731 CN2019103731W WO2021035692A1 WO 2021035692 A1 WO2021035692 A1 WO 2021035692A1 CN 2019103731 W CN2019103731 W CN 2019103731W WO 2021035692 A1 WO2021035692 A1 WO 2021035692A1
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WIPO (PCT)
Prior art keywords
layer
adhesive layer
cathode
thickness
display screen
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PCT/CN2019/103731
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English (en)
Inventor
Yasunori Kijima
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Priority to PCT/CN2019/103731 priority Critical patent/WO2021035692A1/fr
Priority to CN201980099744.4A priority patent/CN114303184A/zh
Publication of WO2021035692A1 publication Critical patent/WO2021035692A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3033—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to a display screen and a terminal device, and more particularly to an encapsulation technique for a display device having an organic light emitting layer.
  • TFE Thin film encapsulation
  • OLED organic light emitting diode
  • the laminated structure in TFE requires a certain thickness
  • the TFE layers restrict the flexibility and foldability of the panel of a display apparatus.
  • a first aspect provides a display screen, which includes a matrix of pixel, and each pixel includes three sub-pixel.
  • each sub-pixel includes a cathode layer and a polarizer layer.
  • the polarizer layer includes an adhesive layer.
  • the adhesive layer is formed on the cathode layer, and permeability of H 2 O and/or O 2 in the adhesive layer is 40 ⁇ m/h or less under a condition of 85°C/85%RH.
  • the adhesive layer can achieves an encapsulation function so that the adhesive layer formed on the cathode layer achieves encapsulation. Therefore, the layer for encapsulation can be made relatively thin in comparison to a laminated structure of TFE. Moreover, it is possible to reduce defects due to dust or the like which is produced in the CVD process, thus ensuring an improvement on the reliability of the display device over long-term usage.
  • permeability of H 2 O and/or O 2 in the adhesive layer is 40 ⁇ m/h or less under a condition of 85°C/85%RH, a display device with practically desirable impermeability is configured.
  • a barrier layer of an inorganic compound of 1 ⁇ m or less in thickness is formed between the cathode layer and the adhesive layer.
  • the barrier layer of the inorganic compound of 1 ⁇ m or less in thickness is formed between the cathode and the adhesive layer.
  • a display screen with an inorganic compound of 1 ⁇ m or less in thickness can prevents invasion of H 2 O and O 2 during the fabrication process. Therefore, degradation due to H 2 O and O 2 in the atmosphere in the fabrication process can be prevented.
  • the adhesive layer is formed on the cathode layer directly.
  • the layer for encapsulation can be made relatively thin because the laminated structure of TFE on the cathode layer is not formed.
  • the adhesive layer has a thickness of 100 ⁇ m or less.
  • the stability of the characteristics of the display device over a long time is achieved.
  • the adhesive layer has a thickness of 50 ⁇ m or less.
  • the growth rate of a dark spot area and the number of dark spots are apparently reduced because the thinner the thickness of the adhesive layer is, the less difficult removing H 2 O and O 2 from the inside of the adhesive layer becomes.
  • the adhesive layer has a thickness of 10 ⁇ m or less.
  • the adhesive layer has a thickness of 5 ⁇ m or less.
  • the thinner the thickness of the adhesive layer is, the less difficult removing H 2 O and O 2 from the inside of the adhesive layer becomes, reduction in the growth rate of a dark spot area and reduction in the number of dark spots become even more prominent, and the thickness of the adhesive layer is set, as needed, to the thickness that allows for absorption of irregularities of the substrate surface.
  • an anode layer a light emitting unit including an organic light emitting layer formed on the anode layer; and an encapsulation member that covers at least a part of side surfaces of the anode, the light emitting unit, and the cathode layer is provided.
  • the provision of the encapsulation member that covers at least a part of the side surfaces of the anode, the light emitting unit, and the cathode layer can prevent permeation of H 2 O and O 2 from the side surfaces of the layer structure of the display device.
  • the display device is a top-emission type display device.
  • the advantage of the adhesive layer having an encapsulation function can be utilized.
  • the cathode layer is a metal having a thickness of 30 nm or less.
  • setting the thickness of a metal cathode layer of Mg-Ag or the like to 30 nm or less enables adjustment and improvement of the intensity of an emission spectrum in a cavity structure. Also, it is possible to configure a well-balanced suitable device without extremely deteriorating light extraction to the outside due to absorption of the light by the cathode layer.
  • a second aspect provides a terminal device, and the terminal device includes a display screen and a processor.
  • the display screen according to the first aspect, and the processor configured to control the display screen.
  • the layer for encapsulation can be made relatively thin in comparison to a laminated structure of TFE for encapsulation. This allows the terminal device to have higher flexibility and higher foldability.
  • no formation of the laminated structure of TFE on the cathode layer can shorten the tact time for fabrication of the terminal device.
  • it is possible to reduce defects due to dust or the like which is produced in the CVD process thus improving the process yield and ensuring an improvement on the reliability of the terminal device over long-term usage.
  • a third aspect provides a method of manufacturing a display screen, which includes a matrix of pixel. And each pixel includes three sub-pixel. This method comprises following steps:
  • a polarizer layer including an adhesive layer, wherein the adhesive layer is formed on the cathode layer, and permeability of H 2 O and/or O 2 in the adhesive layer is 40 ⁇ m/h or less under a condition of 85°C/85%RH.
  • the adhesive layer can achieves an encapsulation function so that the adhesive layer formed on the cathode layer achieves encapsulation. Therefore, the layer for encapsulation can be made relatively thin in comparison to a laminated structure of TFE for encapsulation. Moreover, no formation of a laminated structure of TFE for encapsulation on the cathode layer can shorten the tact time for fabrication of the display device. Particularly, the CVD process takes a long time, so that the elimination of the CVD process can shorten the tact time for fabrication of the display device. The reliability of the display device can also be improved. Furthermore, it is possible to reduce defects due to dust or the like which is produced in the CVD process, thus improving the process yield and ensuring an improvement on the reliability of the display device over long-term usage.
  • permeability of H 2 O and/or O 2 in the adhesive layer is 40 ⁇ m/h or less under a condition of 85°C/85%RH, a display device with practically desirable impermeability is configured.
  • the method further includes:
  • a barrier layer of an inorganic compound of 1 ⁇ m or less in thickness on the cathode layer before the forming an adhesive layer, forming a barrier layer of an inorganic compound of 1 ⁇ m or less in thickness on the cathode layer.
  • the barrier layer of the inorganic compound of 1 ⁇ m or less in thickness is formed between the cathode layer and the adhesive layer, so that degradation due to H 2 O and O 2 in the atmosphere in the fabrication process can be prevented.
  • the adhesive layer is formed on the cathode layer directly.
  • the layer for encapsulation can be made relatively thin because the laminated structure of TFE on the cathode layer is not formed.
  • the adhesive layer has a thickness of 100 ⁇ m or less.
  • the long-term stability of the characteristics of the display device is achieved.
  • the adhesive layer has a thickness of 50 ⁇ m or less.
  • the growth rate of a dark spot area and the number of dark spots are apparently reduced because the thinner the thickness of the adhesive layer is, the less difficult removing H 2 O and O 2 from the inside of the adhesive layer becomes.
  • the adhesive layer has a thickness of 10 ⁇ m or less.
  • the adhesive layer has a thickness of 5 ⁇ m or less.
  • the thinner the thickness of the adhesive layer is, the less difficult removing H 2 O and O 2 from the inside of the adhesive layer becomes, reduction in the growth rate of a dark spot area and reduction in the number of dark spots become even more prominent, and the thickness of the adhesive layer is set, as needed, to the thickness that allows for absorption of irregularities of the substrate surface.
  • the method further includes:
  • an encapsulation member that covers at least a part of side surfaces of the anode, the light emitting unit, and the cathode layer.
  • the provision of the encapsulation member that covers at least a part of the side surfaces of the anode, the light emitting unit, and the cathode layer can prevent permeation of H 2 O and/or O 2 from the side surfaces of the layer structure of the display device.
  • the display device is a top-emission type display device.
  • the advantage of the adhesive layer having an encapsulation function can be utilized.
  • the cathode layer is a metal having a thickness of 30 nm or less.
  • setting the thickness of a metal cathode layer of Mg-Ag or the like to 30 nm or less enables adjustment and improvement of the intensity of an emission spectrum in a cavity structure. Also, it is possible to configure a well-balanced suitable device without extremely deteriorating light extraction to the outside due to absorption of the light by the cathode layer.
  • a fourth aspect provides a method of manufacturing a terminal device, including:
  • the adhesive layer is formed on the cathode layer in each of the display devices formed in a matrix form on the substrate, so that the layer for encapsulation can be made relatively thin.
  • This allows the terminal device to have higher flexibility and higher foldability.
  • no formation of a laminated structure of TFE on the cathode layer can shorten the tact time for fabrication of the terminal device.
  • it is possible to reduce defects due to dust or the like which is produced in the CVD process, thus improving the process yield and ensuring an improvement on the reliability of the display device over long-term usage.
  • FIG. 1 is a diagram showing the structure of a display device according to an embodiment.
  • Fig. 2 is a diagram showing the structure of an adhesive layer.
  • FIG. 3 is a diagram showing the structure of a conventional display device as a comparative example.
  • Fig. 4 is a flow diagram illustrating procedures of manufacturing a display device according to the comparative example.
  • Fig. 5 is a diagram illustrating the procedures of manufacturing a display device according to the comparative example.
  • Fig. 6 is a flow diagram illustrating procedures of manufacturing a display device according to the embodiment.
  • Fig. 7 is a diagram illustrating the procedures of the adhesive-layer adhesion processing according to the embodiment.
  • Fig. 8 is a diagram showing an example of the adhesive-layer adhesion processing.
  • Fig. 9 is a diagram showing a conventional OLED structure
  • Fig. 9 (b) is a diagram showing a mechanism of invasion of H 2 O and O 2 into the OLED structure.
  • Fig. 10 is a diagram showing a mechanism of invasion of H 2 O and O 2 into a part of the structure of an OLED according to the embodiment.
  • Fig. 11 is a diagram showing the mechanism of invasion of H 2 O and O 2 into a part of the structure of the OLED according to the embodiment.
  • Fig. 12 is a diagram showing a relationship between time and permeability in a part of the OLED structure.
  • Fig. 13 is a diagram showing angular dependency of an electroluminescence intensity.
  • Fig. 14 is a diagram showing a relationship between storage time and a dark spot area in a reliability test.
  • Fig. 15 is a diagram showing a relationship between storage time and a shrinkage area in a reliability test.
  • Fig. 16 is a diagram showing an example of a Dam structure of the OLED.
  • Fig. 17 is a diagram showing a relationship between storage time and the number of dark spots in a reliability test.
  • Fig. 18 is a diagram showing a relationship between storage time and the number of dark spots in a reliability test.
  • Fig. 19 is a diagram showing the configuration of a display screen equipped with the display device according to the present embodiment.
  • Display screens according to the embodiments can be applied to, for example, a terminal device.
  • the terminal device could be a smartphone.
  • the terminal may include the display screen and a processor such as a central processing unit (CPU) configured to control the display screen.
  • CPU central processing unit
  • FIG. 1 shows the display device 100 in cross-section with a top side being that side of the display which a user sees, and shows a part of the display device 100 to show the layer structure thereof.
  • the display device 100 is configured to include layer structures of a back side barrier 411, a backplane 412, a front plane 413, and a polarizer layer 801.
  • the back side barrier 411 serves to prevent invasion of O 2 and H 2 O from the back side, and is configured to have a first inorganic barrier layer 401a of silicon nitride (SiN x ) , silicon nitride oxide (SiN x O y ) , silicon oxide (SiO x ) or the like, an organic barrier layer 401b of an organic resin, and a second inorganic barrier layer 401c of SiN x or SiO x stacked in order.
  • the backplane 412 has drivers of a thin film transistors (TFTs) embedded directly under respective pixels to apply a voltage or current to selected pixels to individually operate the pixels.
  • the backplane 412 has a substrate 402a, and a layer (PLN/TFT) 402b including TFTs and a planarization film stacked in order.
  • the front plane 413 is configured to include an anode layer (hereinafter referred as “anode” ) 403a, a light emitting unit 415, and a cathode layer (hereinafter referred as “cathode” ) 403g.
  • the light emitting unit 415 includes a lamination of a hole injection layer (HIL) 403b, a hole transport layer (HTL) 403c, an organic light emitting layer 403d, a hole block layer (HBL) 403e, and an electron transport layer (ETL) 403f in order from the anode 403a side.
  • HIL hole injection layer
  • HTL hole transport layer
  • HBL hole block layer
  • ETL electron transport layer
  • the polarizer layer 801 is configured to have a sequential lamination of a first adhesive layer 801a including an adhesive and an inorganic barrier layer, a polarization plate (POL) 405b, and a second adhesive layer 405c including an adhesive.
  • first adhesive layer 801a may further include a layer of a touch panel (TP) .
  • the adhesive of the first adhesive layer according to the present embodiment may be configured as, for example, an optically clear adhesive (OCA) .
  • OCA optically clear adhesive
  • the adhesive of the second adhesive layer 405c in use may be the same as the first adhesive.
  • thermosetting adhesive such as an acrylic adhesive, an epoxy adhesive, a urethane adhesive, a silicone adhesive, or a cyanoacrylate adhesive, and an ultraviolet curable adhesive, which are components different from the component of the first adhesive, may be used.
  • the first adhesive layer 801a may be formed on the cathode 403g directly.
  • Fig. 2 is a view showing the detailed structure of the first adhesive layer 801a.
  • the first adhesive layer 801a may be configured to include only an adhesive layer 201 as shown in Fig. 2 (a) .
  • the adhesive layer 201 may be stacked on an inorganic barrier layer 202 formed of SiN x , SiN x O y , SiO x or the like, as shown in Fig. 2 (b) , or those layers may be stacked in the reverse order to the order shown in Fig. 2 (b) , as shown in Fig. 2 (c) .
  • the first adhesive layer 801a may be configured to include a touch panel (TP) .
  • TP touch panel
  • the adhesive layer 201, the TP 203 and an inorganic barrier layer 202 may be stacked in order from the bottom as shown in Fig. 2 (d) , or those layers maybe stacked in the reverse order to the order shown in Fig. 2 (d) , as shown in Fig. 2 (e) .
  • the inorganic barrier layer 202 may be composed of a plurality of layers of SiN x , SiN x O y , or SiO x . Furthermore, one adhesive layer, the TP 203, and another adhesive layer may be sequentially stacked on the inorganic barrier layer 202.
  • the display component 100 is a top-emission type display device which extracts, from the cathode 403g side opposite to the substrate 402a, light generated when holes injected from the anode 403a and electrons injected from the cathode 403g recombine in the organic light emitting layer 403d.
  • the substrate 402a is a supporting body in which a plurality of display components 100 are disposed and formed on one principal surface side thereof; for example, the substrate 402a is made of a quartz, a glass, a metallic foil, a film or a sheet made of a resin, or the like. Of those materials, the quartz and the glass are preferable.
  • polyesters such as polybutylene naphthalate (PBN) , methacrylic resins typified by polymethylmethacrylate (PMMA) , polyethylene terephthalate (PET) , polyethylene naphthalate (PEN) , polyimide (PI) , polyamide (PA) , or polycarbonate resins or the like are available as the material for the substrate 402a.
  • PBN polybutylene naphthalate
  • PMMA methacrylic resins typified by polymethylmethacrylate
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PI polyimide
  • PA polyamide
  • polycarbonate resins or the like are available as the material for the substrate 402a.
  • the anode 403a is preferably made of an electrode material which has a large work function from a vacuum level.
  • a simple substance of a metal element such as chromium (Cr) , gold (Au) , platinum (Pt) , nickel (Ni) , copper (Cu) , tungsten (W) , or silver (Ag) , or an alloy thereof is available as such an electrode material.
  • the anode 403a may have a laminated structure of a metallic film made of a simple substance or an alloy of such metallic elements, and a transparent conductive film made of indium tin oxide (ITO) , indium zinc oxide (InZnO) , or an alloy of zinc oxide (ZnO) and aluminium (Al) , or the like.
  • ITO indium tin oxide
  • InZnO indium zinc oxide
  • Al aluminium
  • an electrode having a high reflectivity is used as the anode 403a, whereby the efficiency of extracting light to the outside is improved due to the interference effect and the high reflectivity effect.
  • the anode 403a preferably uses a laminated structure of a first layer which is excellent in light reflecting property, and a second layer which is provided on a portion of the first layer close to the HIL 403b and which has light permeability and a large work function.
  • the first layer is preferably made of an alloy mainly containing Al as a principal component, and also contains, as an accessary component, an element which has a relatively smaller work function than that of Al serving as the principal component.
  • any of lanthanoid series elements is preferably used as such an accessary component. Although the work function of any lanthanoid series element is not large, any of these elements when contained in accessary component increases the stability of the anode and fulfills the hole injection property of the anode.
  • an element such as silicon (Si) or copper (Cu) may also be used as the accessary component of the first layer.
  • the second layer can be made of an oxide of an Al alloy, an oxide of molybdenum (Mo) , an oxide of zirconium (Zr) , an oxide of chromium (Cr) , or an oxide of tantalum (Ta) .
  • Mo molybdenum
  • Zr zirconium
  • Cr chromium
  • Ta tantalum
  • the second layer is composed of an oxide layer (including a natural oxide film) of an Al alloy containing any of the lanthanoid series elements as an accessary component, since the oxide of any lanthanoid series element has high transmittance, the transmittance of the second layer containing the oxide of any lanthanoid series element as the accessary component is excellent. As a result, the reflectivity on the surface of the first layer is kept high.
  • the use of a transparent conductive layer made of ITO or the like in the second layer improves the electron injection property of the anode 403a. It is to be noted that since ITO or the like has a large work function, the use of the ITO or the like on the side contacting the substrate 402a, that is, in the first layer, can enhance the carrier injection efficiency, and can also enhance the adhesion between the anode 403a and the substrate 402a.
  • each pixel part is patterned with a pixel define layer (PDL, WIN) and is provided so as to be connected to a TFT for driving after the formation of the anode 403a.
  • PDL pixel define layer
  • the HIL 403b, the HTL 403c, the organic light emitting layer 403d, the HBL 403e, and the ETL 403f included in the light emitting unit 415 are organic layers. Those organic layers are composed of materials to be described later in addition to an acrylic compound and hexamethyldisiloxane (HMDSO) . The organic layers are formed by, for example, an inkjet printer or the like. A surface of the ETL 403f that is opposite from the HBL 403e is covered with the cathode 403g. Although the thicknesses, composing materials and the like of the individual layers composing the organic layer are not particularly limited, some examples thereof will be described below.
  • the HIL 403b is a buffer layer for enhancing the efficiency of injecting holes into the organic light emitting layer 403d, and preventing generation of a leakage current.
  • the thickness of the HIL 403b is preferably set in the range of 5 to 200 nm, more preferably in the range of 8 to 150 nm.
  • the material for the HIL 403b may be adequately selected in relation to the materials for the electrodes and the adjacent layer.
  • Examples of the materials include polyaniline and a derivative thereof, polythiophene and a derivative thereof, polypyrrole and a derivative thereof, polyphenylenevinylene and a derivative thereof, polythienylenevinylene and a derivative thereof, polyquinoline and a derivative thereof, polyquinoxaline and a derivative thereof, a conductive high-molecular material such as polymer containing an aromatic amine structure in a main chain or side chain thereof, metal phthalocyanine (such as copper phthalocyanine) , and carbon.
  • Specific examples of the conductive high-molecular material include oligoaniline and polydioxythiophene such as poly (3, 4-ethylenedioxythiophene) (PEDOT) .
  • the HTL 403c serves to enhance the efficiency of transporting holes to the organic light emitting layer 403d.
  • the thickness of the HTL 403c which depends on the entire structure of the device, is preferably set, for example, in the range of 5 to 200 nm, more preferably in the range of 8 to 150 nm.
  • a luminescent material which is soluble into an organic solvent for example, polyvinylcarbazole and a derivative thereof, polyfluorene and a derivative thereof, polyaniline and a derivative thereof, polysilane and a derivative thereof, polysiloxane derivative having aromatic amine in a side chain or main chain thereof, polythiophene and a derivative thereof, polypyrrole, a triphenylamine derivative or the like can be used as the material for the HTL 403c.
  • the application of an electric field recombines electrons with holes to emit light.
  • the thickness of the organic light emitting layer 403d which depends on the entire structure of the device, is preferably set, for example, in the range of 10 to 200 nm, more preferably in the range of 20 to 150 nm.
  • the organic light emitting layer 403d may have either a single layer structure or a laminated structure.
  • the material used for the organic light emitting layer 403d should be selected according to a corresponding emission color; for example, available materials for the organic light emitting layer 403d include a (poly) paraphenylenevinylene derivative, a polyfluorene polymer derivative, a polyphenylene derivative, a polyvinylcarbazole derivative, a polythiophene derivative, a perylene pigment, a coumarin pigment, a rhodamine pigment, a triphenylamine derivative and a material which is obtained by doping the high-molecular materials mentioned above with an organic EL material.
  • available materials for the organic light emitting layer 403d include a (poly) paraphenylenevinylene derivative, a polyfluorene polymer derivative, a polyphenylene derivative, a polyvinylcarbazole derivative, a polythiophene derivative, a perylene pigment, a coumarin pigment, a rhodamine pigment, a triphenyl
  • the material for the organic light emitting layer 403d may be obtained by mixing two or more kinds of the above-mentioned materials.
  • the material for the organic light emitting layer 403d is not limited to the above-mentioned high-molecular materials, and may be a combination of low-molecular materials.
  • Examples of such a low-molecular material include anthracene, benzine, styrylamine, triphenylamine, porphyrin, triphenylene, azatriphenylene, tetracyanoquinodimethane, triazole, imidazole, oxadiazole, polyarylalkane, phenylenediamine, arylamine, oxazole, fluorenone, hydrazone, stilbene, triphenylamine derivatives of the aforementioned materials, and heterocyclic conjugate monomer or oligomer of a polysilane compound, a vinylcarbazole compound, a thiophene compound, an aniline compound or the like.
  • a material having a high luminous efficiency as a luminescence guest material for example, an organic luminescent material such as a low-molecular fluorescent material, a phosphorescent pigment or a metallic complex is available as the material for the organic light emitting layer 403d.
  • the organic light emitting layer 403d may be, for example, an organic light emitting layer having a hole transport property and serving as the HTL 403c as well as an organic light emitting layer having an electron transport property and serving as the ETL 403f to be described later.
  • the HBL 403e serves to inhibit the inflow of the holes into the cathode 403g, and may be made of, for example, BCP (2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline) .
  • the thickness of the HBL 403e may be set, for example, in the range of 0.1 to 100 nm.
  • the ETL 403f serves to enhance the efficiency of transporting electrons to the organic light emitting layer 403d.
  • the thickness of the ETL 403f which depends on the entire structure of the device, is preferably set, for example, in the range of 5 to 200 nm, more preferably in the range of 10 to 180 nm.
  • An organic material having an excellent electron transporting ability is preferably used as the material for the ETL 403f.
  • the enhancement of the efficiency of transporting electrons to the organic light emitting layer 403d suppresses a change in an emission color due to an electric field strength which will be described later.
  • an arylpyridine derivative, a benzimidazole derivative or the like is preferably used. As a result, even with a low drive voltage, a high electrons supply efficiency is maintained.
  • organic material examples include an alkaline metal and an oxide thereof, a composite oxide thereof, a fluoride thereof, and a carbonate thereof, an alkaline earth metal and an oxide thereof, a composite oxide thereof, a fluoride thereof, and a carbonate thereof, and a rare earth metal and an oxide thereof, a composite oxide thereof, a fluoride thereof, and a carbonate thereof.
  • the ETL 403f has an electron donor property; for example, electron transport materials which are doped with an n-type dopant, specifically, the above-mentioned materials for the ETL 403f can be used as the material for the ETL 403f.
  • the n-type doping material include an alkaline metal or an oxide thereof, a composite oxide thereof, a fluoride thereof, and an organic complex thereof, and an alkaline earth metal or an oxide thereof, a composite oxide thereof, a fluoride thereof, and an organic complex thereof.
  • materials each of which is low in electronegativity and is excellent in electron donor property may be available.
  • these materials those materials which are small in light absorption in the visible light region in a film status are preferable.
  • metallic materials with low electron affinity such as alkaline metals like Li, Na, K, Rb and Cs, alkaline earth metals like Be, Mg, Ca, Sr, Ba and Ra, or lanthanide metals like Sm, Yb, Ga and La are examples of such materials.
  • the cathode 403g for example, is made of a material which is about 10 nm thick and excellent in light permeability and which has a small work function. In addition, even the formation of a transparent conductive film using an oxide can guarantee light extraction. In this case, ZnO, ITO, InZnO, InSnZnO and the like are available. Furthermore, although the cathode 403g may be a single layer, the cathode 403g may also have a structure in which a plurality of layers are sequentially stacked from the anode 403a side.
  • the cathode 403g may also be composed of a mixed layer containing an organic light emitting material such as an aluminium quinoline complex, a styrylamine derivative or a phthalocyanine derivative.
  • the cathode 403g may further have an Al-Li layer or an Mg-Ag layer.
  • the cathode 403g should take the optimal combination and the optimal laminated structure.
  • a first adhesive layer 801a of the polarizer 801 includes a layer of an adhesive as shown in Figs. 1 to 3.
  • This adhesive layer contains a material selected from those given in the following (1) as a base material to which a material selected from resins given in the following (2) as a tackifying resin is added to provide adhesiveness. If there is not any problem in compatibility, a plurality of materials may be selected from (i) to (vi) of (1) .
  • the adhesive layer may contain a material selected from the following (3) as a filler.
  • the adhesive layer of the present embodiment obtained by the selection of those materials has a function of getting O 2 and H 2 O which infiltrate into the inside of the first adhesive layer 801a.
  • the selected materials include materials that function as getter agents to get O 2 and H 2 O.
  • O 2 and H 2 O are captured by the function of side chains of the selected materials.
  • the epoxy resin may have a glycidyl group.
  • the styrene-isobutylene modified resin have polystyrene backbone and polyisobutylene bone block copolymers which have a functional group.
  • the functional group may include, but not limited to, one or more selected from a group consisting of: an acid anhydride group, amino group, carboxyl group, cyanate group, epoxy group, hydrazide group, hydroxyl group, isocyanate group, oxazoline group, oxetane group and phenol group.
  • the modified polyolefin resin includes methacrylic, acrylic acid alkyl ester and acid anhydride modified polyolefin resin.
  • the phenoxy resin is synthesized from bisphenol A epoxy resin and/or bisphenol F epoxy resin.
  • the polyisoprene and/or polyisobutylene resin may have a functional group capable of reacting with an epoxy group.
  • Tackifying resin may include, but not limited to, one or more components selected from a group consisting of: an alicyclic saturated hydrocarbon resin, aliphatic petroleum resin, dicyclope pentadiene modified hydrocarbon resin, alicyclic unsaturated hydrocarbon resin, and/or cyclohexane ring-containing saturated hydrocarbon resin.
  • the filler may include, but not limited to, one or more components selected from a group consisting of: aluminium oxide, barium titanate, hydrotalcite, titanium oxide, cerium oxide and/or zirconium oxide.
  • the first adhesive layer 801a further includes a thin inorganic barrier layer of SiN x /SiN x O y /SiO x or the like.
  • the inorganic barrier layer is added to prevent degradation of the OLED caused by H 2 O and O 2 , and the thickness of the inorganic barrier layer may be greater than 0 nm and equal to about 1 ⁇ m or less.
  • the first layer may be laminated by forming an inorganic barrier layer of SiN x /SiO x on cathode 403g by CVD before adhering the adhesive layer directly onto the cathode 403g, and then adhering the adhesive layer onto this inorganic barrier layer.
  • the first layer is appropriately selected for protection against degradation of the underlying cathode 403g during the process due to H 2 O and O 2 from the ambient surrounding. It is preferable that the first layer be thinner.
  • the first adhesive layer 801a further includes a touch panel (TP) .
  • TP polyethylene terephthalate (PET) , a cycloolefin polymer (COP) , polyimide (PI) , polycarbonate (PC) , cellulose triacetate (TAC) or the like in which a wiring pattern of ITO, copper or the like is formed may be used.
  • PET polyethylene terephthalate
  • COP cycloolefin polymer
  • PI polyimide
  • PC polycarbonate
  • TAC cellulose triacetate
  • the adhesive layer, the inorganic barrier layer and the TP can be stacked in any order.
  • the polarization plate 405b is for preventing the reflection of sunlight, and polyvinyl alcohol (PVA) , cellulose triacetate (TAC) or the like is used for the polarization plate.
  • the second adhesive layer 405c is used to adhere higher layers such as color filters.
  • the adhesive used here may be an adhesive layer, or an adhesive other than an adhesive layer may be used.
  • Fig. 3 shows the structure of a conventional display device as a comparative example.
  • a back side barrier 411, a backplane 412, and a front plane 413 are the same as those in Fig. 1.
  • the display device 200 has TFE 414 and a polarizer 416 stacked on the cathode 403g of the front plane 413.
  • the TFE 414 has a lamination of a first inorganic barrier layer 404a of SiN x /SiO x of about 1 ⁇ m thick, an organic barrier layer 404b of about 7.5 ⁇ m thick, and a second inorganic barrier layer 404c of SiN x /SiO x of about 1 ⁇ m thick.
  • the polarizer 416 is configured to have a lamination of a first adhesive layer 405a including the conventional adhesive, the TP, and/or SiN x /SiO x , a POL 405b, and a second adhesive layer 405c on SiN x /SiO x of the TFE 414.
  • a first adhesive layer 405a including the conventional adhesive, the TP, and/or SiN x /SiO x
  • POL 405b a second adhesive layer 405c on SiN x /SiO x of the TFE 414.
  • the substrate 402a having a back side barrier 411 formed on the back surface thereof is prepared.
  • a layer (PLN/TFT) 402b of thin film transistors (TFTs) and a planarization film (PLN) is formed on the surface of this substrate 402a.
  • the anode 403a, the HIL 403b, the HTL 403c, the organic light emitting layer 403d, the HBL 403e, and the ETL 403f are formed on the planarized PLN/TFT 402b by an inkjet printer or the like.
  • the cathode 403g is formed on the ETL 403f by vacuum evaporation or the like.
  • the front plane 413 is formed in this way (S101) .
  • an organic capping layer may be formed on the cathode 403g.
  • the organic capping layer is formed in the top-emission type organic electroluminescent device to prevent loss of a considerable amount of light due to total reflection of light when the cathode 403g is formed.
  • the organic capping layer preferably contains one element selected from the group consisting of an arylenediamine derivative, a triamine derivative, 4, 4'-bis (carbazole-9-yl) biphenyl (CBP) and tris (8-hydroxyquinolinato) aluminium (Alq3) .
  • step S102 the first inorganic barrier layer 404a of SiN x is deposited on the cathode 403g by CVD in vacuum (for example, 1 Pa or less) .
  • step S103 an acrylic resin layer is formed on the first SiN x layer using a printing technique such as an inkjet method.
  • step S104 the acrylic resin layer is heat cured in dry air to form the organic barrier layer 404b.
  • step S105 the second inorganic barrier layer 404c of SiN x is formed by CVD in vacuum.
  • step S106 the first adhesive layer 405a including the adhesive layer, the polarization plate (POL) 405b, and the second adhesive layer 405c are formed on the TFE 414 through lamination processing.
  • the polarizer 416 is formed.
  • the TFE formed in the above processing has a complex structure including at least three layers of inorganic barrier layer/organic barrier layer/inorganic barrier layer.
  • the thickness of the inorganic barrier layer/organic barrier layer/inorganic barrier layer is approximately 1 to 2 ⁇ m/6 to 12 ⁇ m/1 to 2 ⁇ m, respectively, which hinders flattening of the display screen using the OLED.
  • next generation OLEDs may shift to Foldable OLED formulas, such as an inner fold type, outer fold type, and S shape (both inner and outer) .
  • the Foldable OLED is preferably composed of a soft material such as organic molecules.
  • organic molecules are not chemically bonded but are subjected to the Van der Waals interaction between molecules to form an organic thin film.
  • the inorganic part of the TFE that is, SiN x O y , SiN x , SiO x or the like is a rigid film with very strong bonding force and is thus frangible and easily damaged against bending operation.
  • the first inorganic barrier layer 404a of the TFE 414 is formed in vacuum
  • the organic barrier layer 404b is formed in air
  • the second inorganic barrier layer 404c is formed again in vacuum.
  • SiN x O y or SiN x can be formed by CVD using a suitable mixture of SiH 4 gas and NH 3 gas.
  • CVD stands for Chemical Vapor Deposition in which a film forming material is provided as a gas and film deposition is performed by a chemical reaction on the surface of a substrate (base material) in a gas phase.
  • the CVD has some disadvantages in forming an inorganic barrier layer. Plasma CVD and thermal CVD will be described below as examples to explain the disadvantages.
  • the plasma CVD is a film deposition technology in which a high frequency is applied to parallel-plate-type electrodes provided in a reaction furnace, and a source gas composed of a halide of a material as the main component of the film and a carrier gas such as hydrogen or nitrogen as needed are decomposed by plasma gasification to deposit the material on the substrate put on one of the electrodes to form a thin film.
  • Plasma generating schemes include high frequency (inductive coupling type) discharging, direct current glow discharging, and microwave discharging in addition to high frequency (parallel plate type) discharging.
  • the use of plasma makes it possible to perform film deposition even at 300°C which is low as compared with the thermal CVD, and prevent reaction with the substrate. Therefore, it is possible to deposit a film on non-heat resistant substrates such as plastics.
  • the plasma CVD has many features, such as easy deposition on a large area, and the ability to form a film having a uniform thickness.
  • the pressure for film deposition is 1 to several hundreds Pa, at which plasma is easily generated. In the OLED, it is common to deposit an inorganic barrier layer using this plasma CVD.
  • thermal CVD In the thermal CVD, a source gas and an oxidant or a reducing agent are mixed, and the mixture is introduced into a reaction vessel, so that a chemical reaction occurs on a high-temperature substrate surface. This chemical reaction is determined by the ratio of raw materials, the reaction temperature, and the design of the reaction vessel.
  • Thermal CVD has advantages such that the device configuration is relatively simple, a high-purity thin film can be formed, and the coverage is good.
  • thermal CVD has disadvantages such that limitations to on usable film forming temperature, available substrates and available source gases, and the film quality being likely to be degraded at low temperature.
  • Fig. 6 is a flowchart illustrating the procedures of manufacturing a display device according to the embodiment.
  • the adhesive layer is adhered onto the cathode by a lamination process.
  • the adhesive layer can be an OCA which is an optically clear adhesive film.
  • the adhesion of the adhesive layer can be performed in the air. For this reason, pre-adhesion of the polarization layer including the polarization plate and the touch panel to the adhesive layer allows the laminated structure on the cathode to be adhered by lamination without performing a heat treatment in air.
  • the remaining steps can be performed by the lamination process.
  • Fig. 8 schematically shows the procedures of the lamination process.
  • Fig. 8 (a) shows a layer structure 301 in which polarization plate 303 is formed on the OCA 302.
  • Fig. 8 (c) shows a layer structure 304 that includes a back side barrier 306, a backplane 307 and a front plane 308.
  • the layer structure 301 and the layer structure 304 are prepared separately, and those two layer structures are crimped by a roll laminator 305, as shown in Fig. 8 (b) .
  • an autoclave may be used in the final procedure in the lamination process to remove the remaining air from the lamination surface by heat and pressure.
  • An acrylic compound or HMDSO is often used as a part of the component of the protective film of the OLED, but such a component is likely to capture H 2 O from the air or from the fabrication process flow. This is not favorable for the reliability of OLEDs.
  • the layer structure of the display device is disadvantageous in that it is vulnerable to the permeation of H 2 O and O 2 from the side.
  • Fig. 9 shows the permeation (invasion) of H 2 O and O 2 into the display device of the comparative example.
  • Fig. 9 (b) shows the front plane 413 and TFE 414 in the display device 200 shown in Fig. 9 (a) .
  • H 2 O and O 2 permeate horizontally from the interface between the layers and the sides of the layers, and then descend. Therefore, when the number of layers of the TFE is large and the areas of the sides of the layers are large, H 2 O and O 2 easily permeate the layers.
  • Fig. 10 shows the layer structure according to the present embodiment.
  • H 2 O and O 2 may permeate from the side surface of the first adhesive layer 801a and the interface of the cathode 403g, but the permeation paths are reduced to suppress the permeation of H 2 O and O 2 .
  • Fig. 11 shows another layer structure according to the present embodiment.
  • the layer structure shown in Fig. 11 has an anode 602, OLEDs 603, a bank 608 partitioning the OLEDs 603, a cathode 604, a first adhesive layer 605, a polarization plate 606, and a second adhesive layer 607, which are stacked on a backplane 601 including a substrate and TFTs.
  • the permeation of H 2 O and O 2 is suppressed to the side surface of the first adhesive layer 605, and the interface between the first adhesive layer 605 and the cathode 604.
  • Fig. 12 is a diagram showing the permeability of H 2 O and O 2 into the adhesive layer according to the present embodiment.
  • the abscissa axis represents the storage time for 85°C/85%RH
  • the ordinate axis represents the permeability of H 2 O and O 2 according to the number of dark spots.
  • the material for the adhesive layer that is attached to the OLED device directly or via a thin inorganic barrier layer of SiN x and/or SiO x has a low speed of permeation of H 2 O and/or O 2 and has a low permeability with the passage of the storage time as compared with the conventional TFE structure.
  • the curve of permeability becomes a saturated curve, and has a small slope as indicated by a broken line in Fig. 12.
  • the adhesive layer has characteristics such that the filler to be added into the adhesive layer serves as a getter agent so as to capture H 2 O and/or O 2 by chemical reactions.
  • the adhesive layer has characteristics such that the side chain of the substance constituting the adhesive layer has a part which bonds to H 2 O and/or O 2 by chemical reactions so as to capture H 2 O and/or O 2 by chemical reactions.
  • the material for the adhesive layer should have a permeation speed of H 2 O and/or O 2 of 0 ⁇ m/h or greater and 40 ⁇ m/h or less under the condition of 85°C/85%RH. It is also preferable that the dark spot area after 300 hours under the condition of 85°C/85%RH should be 0 ⁇ m 2 or greater and 3000 ⁇ m 2 or less (that is, an area of ⁇ 0.75%) for an emission area of 4 mm 2 .
  • Fig. 13 shows angular dependency of an electroluminescence intensity (a.u. ) per 1 cm 2 regarding the emission surfaces of the display devices of the present embodiment and the comparative example.
  • the current that is caused to flow through the circuit is 10 mA.
  • the display device according to the present embodiment has a higher electroluminescence intensity over a range of -90° to 90° than that of the display device according to the comparative example.
  • the electroluminescence intensity is used in calculating the external quantum efficiency (EQE) which is used as an index for the characteristics of the display device of the OLED. That is, EQE (%) is the ratio of the number of photons extracted from the device to the number of carriers injected into the device, and this value ⁇ EQE is given by the following equation.
  • k is a constant
  • P is an emission intensity per unit area of the OLED
  • ⁇ is a wavelength
  • I is a current flowing through the display device.
  • Fig. 14 shows the results of measuring the dark spot area for the storage time under the condition of 85°C/85%RH.
  • Example 1 is a display device having an adhesive layer with a thickness of 5 ⁇ m
  • a reference example is a display device having the conventional TFE
  • Example 2 are the display devices having an adhesive layer with a thickness of 20 ⁇ m.
  • the reference example has a TFE structure of SiN x of 800 nm/SiN x O y of 300 nm/organic resin of 8 ⁇ m/SiN x O y of 200 nm/SiN x of 800 nm/OLED. According to the measurement results, the value of the dark spot area in Example 1 up to the point of 300 hours is substantially the same as that in the reference example.
  • the growth of the dark spot area is very fast as compared with the adhesive layer of 5 ⁇ m.
  • the speed of the growth of the dark spot area seems to be originated from the difficulty of removing H 2 O and O 2 from the inside of the adhesive layer. Therefore, making the adhesive layer to be formed on the OLED thinner can provide better characteristics.
  • the thickness of the adhesive layer is appropriately selected so as to keep a strength large enough for adhesion and absorb the roughness of the lower structure, and be greater than 0 nm and equal to about 100 ⁇ m or less.
  • the thickness of the adhesive layer being about 50 ⁇ m or less
  • reduction in the growth rate of a dark spot area is obvious
  • the thickness of the adhesive layer being about 10 ⁇ m or less
  • suppression of the growth rate becomes more prominent.
  • setting the thickness to about 5 ⁇ m or less reduces the growth rate of a dark spot area and the number of dark spots more prominently, and the thickness is set, as needed, to the thickness that allows for absorption of irregularities of the substrate surface.
  • Fig. 15 shows the results of measuring the shrinkage area for the storage time under the condition of 85°C/85%RH.
  • the structures of Example 1, Example 2 and the reference example are the same as those in Fig. 14.
  • the measurement results show that the shrinkage area is not seen up to the point of 300 hours in the case of Example 1 having the 5- ⁇ m thick adhesive layer. In the case of Example 2 having the 20- ⁇ m thick adhesive layer, however, the shrinkage area is still seen at the point of 300 hours. In the case of Example 1, the shrinkage area appears at the point of 900 hours. It is to be noted however that the appearance of the shrinkage area can be suppressed by the Dam structure applied to the side surface of the display device.
  • Fig. 16 is a diagram showing a layer structure according to another embodiment of the present disclosure.
  • a layer structure 1600 is formed to have a substrate 1201, a layer structure 1202 formed by the lamination of layers of TFTs to a cathode formed on the substrate 1201, and an adhesive layer 1206 formed on the layer structure 1202. Then, an encapsulation member 1205 having what is called a Dam structure is disposed on the side surface of the layer structure 1202 to cover the side surface.
  • the Dam structure is formed of an ultraviolet-cured resin or the like, and has a cross-sectional shape including a plurality of irregularities as shown in Fig. 16.
  • the layer structure 1600 further includes the adhesive layer 1206, which is formed so as to cover the top portions of the layer structure 1202 and the encapsulation member 1205.
  • the layer structure is not limited to the example shown in Fig. 16, and any layer structure provided with the encapsulation member which covers at least a part of the side surfaces of the light emitting unit and the cathode can prevent permeation of H 2 O and O 2 from the side surfaces at least partially.
  • Fig. 17 shows the results of measuring the number of dark spots for the storage time under the condition of 85°C/85%RH.
  • the structures of Example 1, Example 2 and the reference example are the same as the targets of measurement in the graph in Fig. 14.
  • the measurement results show that in the case of Example 1 having the 5- ⁇ m thick adhesive layer, the number of dark spots is smaller than that in the reference example up to the point of 300 hours. In the case of the adhesive layer with a thickness of more than 10 ⁇ m, however, the number of dark spots prominently increases after 100 hours. It appears that H 2 O and O 2 contained in the adhesive layer itself may affect the increase in the number of dark spots.
  • Fig. 18 shows the graph of Fig. 17 added with the results of measuring OLEDs with adhesive layers of different thicknesses.
  • the thickness of the adhesive layer As for the thickness of the adhesive layer, as the adhesive layer becomes thinner, the number of dark spots can be reduced. The reduction in the number of dark spots can provide good conditions by adhering the OLED display device and the adhesive layer without clearances between the surfaces thereof. Thus, the reduction in the number of dark spots is limited by the adhesion of the adhesive layer.
  • the adhesion depends on the design of the wirings on the substrate in the backplane, the conditions of the wirings, and the like. Since the OLED is formed on the PLN/TFT of the backplane, the overall surface roughness depends on the design of the device and the minimum thickness of the adhesive layer is determined according to these conditions.
  • the adhesive layer should preferably have a thickness of greater than 0 nm and equal to or less than 100 ⁇ m.
  • the thickness of the adhesive layer being about 50 ⁇ m or less, reduction in the number of dark spot areas is obvious, and with the thickness of the adhesive layer being about 10 ⁇ m or less, suppression of the number of dark spot areas becomes more prominent.
  • setting the thickness to about 5 ⁇ m or less reduces the growth rate of a dark spot area and the number of dark spots more prominently, and the thickness is set, as needed, to the thickness that allows for absorption of irregularities of the substrate surface.
  • Fig. 19 shows the configuration of a display screen 1800 including the display devices 100 of the present embodiment.
  • the display screen 1800 is used as the display of a terminal device such as a smartphone or the like, and controlled by a processor.
  • the display screen 1800 has a matrix of pixel including a plurality of display devices 100.
  • Each pixel 1802 includes light emitting devices corresponds to three sub-pixels (for example, red light emitting devices 100R, green light emitting devices 100G, and blue light emitting devices 100B) disposed in a matrix on a substrate 402a as the display area.
  • a signal line driver 1803 and a scan line driver 1804 which are drivers for image display are provided around the display area. It is to be noted that a combination of adjacent display devices 100 constitutes one pixel 1802. Such a configuration allows certain display devices 100 to be selected to emit light in accordance with signals from the signal line driver 1803 and the scan line driver 1804.
  • the above-described embodiments are effective especially for a top-emission structure in which light is extracted from the top of the substrate (cathode side) , and in this case, the thickness of the cathode film needs to be thin in order to extract light.
  • the thickness should generally be 30 nm or less.
  • a transparent material such as InZnO is used on the top of the substrate, absorption of light emission by the thick film is increased. In this case, the thickness is appropriately set within the range where power consumption of a panel does not increase.
  • a currently used inorganic/organic/inorganic laminated structure or the structure of thin film encapsulation (TFE) which is an inorganic laminated structure is not formed on the cathode, so that the CVD and inkjet processes are eliminated.
  • the CVD process needs to take a long time, so that the fabrication time required can be reduced.
  • it is necessary to perform the process at high temperature, which adversely affects the reliability of the OLED device. Therefore, eliminating the CVD process can also improve the reliability of the OLED device.
  • inorganic SiNxOy and/or SiNx contained in TFE absorbs blue light, forming no laminated structure of TFE enhances the EQE (EL intensity) . As a result, dissipation power can be reduced.
  • inorganic SiN x O y and/or SiN x contained in the TFE is rigid to make multiple cracks when bent, which impairs the reliability of the OLED display device. Therefore, forming no laminated structure of TFE can provide a better structure of a foldabale OLED display.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un écran d'affichage et un dispositif terminal capables d'améliorer la flexibilité et l'aptitude au pliage. L'écran d'affichage comprend une matrice de pixels, et chaque pixel comprend trois sous-pixels. Chaque sous-pixel comprend une couche de cathode et une couche de polariseur. La couche de polariseur comprend une couche adhésive. La couche adhésive est formée sur la couche de cathode, et la perméabilité de H 2O et/ou O 2 dans la couche adhésive est de 40 µm/h ou moins dans des conditions de 85 °C/85 % RH. Dans un mode de réalisation, une couche barrière d'un composé inorganique d'une épaisseur de 1 µm ou moins peut être formée entre la couche de cathode et la couche adhésive. La couche adhésive présente une épaisseur inférieure ou égale à 100 μm.
PCT/CN2019/103731 2019-08-30 2019-08-30 Écran d'affichage et dispositif terminal Ceased WO2021035692A1 (fr)

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