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WO2021063722A1 - Dispositif de nettoyage, appareil de lithographie, procédé d'élimination d'eau ou d'un autre contaminant et procédé de fabrication de dispositif - Google Patents

Dispositif de nettoyage, appareil de lithographie, procédé d'élimination d'eau ou d'un autre contaminant et procédé de fabrication de dispositif Download PDF

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Publication number
WO2021063722A1
WO2021063722A1 PCT/EP2020/076283 EP2020076283W WO2021063722A1 WO 2021063722 A1 WO2021063722 A1 WO 2021063722A1 EP 2020076283 W EP2020076283 W EP 2020076283W WO 2021063722 A1 WO2021063722 A1 WO 2021063722A1
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning device
radiation
lithography apparatus
contaminant
decontamination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2020/076283
Other languages
English (en)
Inventor
Pawel SAFINOWSKI
Marcus Adrianus Van De Kerkhof
Alexandar Nikolov ZDRAVKOV
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Priority to CN202080068335.0A priority Critical patent/CN114503034A/zh
Publication of WO2021063722A1 publication Critical patent/WO2021063722A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

Definitions

  • a lithography apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate.
  • a lithography apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
  • a patterning device which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC.
  • This pattern can be transferred onto a target portion (e.g., comprising part of, one, or several dies) on a substrate (e.g., a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate.
  • resist radiation-sensitive material
  • Lithography is widely recognized as one of the key steps in the manufacture of ICs and other devices and/or structures. However, as the dimensions of features made using lithography become smaller, lithography is becoming a more critical factor for enabling miniature IC or other devices and or structures to be manufactured.
  • the lithography apparatus comprises optical elements, for example for producing the radiation beam and projecting the radiation beam to the substrate. After service interventions water and hydrocarbon contamination can deposit on the optical elements. Additionally, the transmission and reflection properties of the optical elements can degrade over time due to water and possibly contaminant particles on the optical elements.
  • the optical elements can be cleaned using the scanner. [0009] It is desirable to provide a cleaning device that can clean the optical elements more effectively and/or in a less costly manner.
  • a lithography apparatus comprising: a radiation system configured to provide a projection beam of radiation; a support structure configured to support a patterning device serving to pattern the projection beam according to a desired pattern a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; and the cleaning device mentioned above, wherein the support structure is configured to support the cleaning device.
  • a method of removing water or other contaminant from a surface of an optical component or other component of a lithography apparatus comprising the steps of: clamping a cleaning device onto a support structure that is configured to support a patterning device that serves to pattern a projection beam according to a desired pattern; and supplying decontamination radiation from the cleaning device so as to remove water or other contaminant from a surface of an optical component or other component of the lithography apparatus.
  • the support structure MT holds the patterning device MA in a manner that depends on the orientation of the patterning device, the design of the lithography apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment.
  • the support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device.
  • the support structure may be a frame or a table, for example, which may be fixed or movable as required. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system.
  • the projection system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of a vacuum. It may be desired to use a vacuum for EUV radiation since other gases may absorb too much radiation. A vacuum environment may therefore be provided to the whole beam path with the aid of a vacuum wall and vacuum pumps.
  • the apparatus is of a reflective type (e.g., employing a reflective mask).
  • the resulting plasma emits output radiation, e.g., EUV radiation, which is collected using a radiation collector, disposed in the source collector module.
  • output radiation e.g., EUV radiation
  • the laser and the source collector module may be separate entities, for example when a CO2 laser is used to provide the laser beam for fuel excitation.
  • the support structure (e.g., mask table) MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern imparted to the radiation beam is projected onto a target portion C.
  • a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan.
  • This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as referred to above.
  • the radiation emitted by the hot plasma 210 is passed from a source chamber 211 into a collector chamber 212 via an optional gas barrier or contaminant trap 230 (in some cases also referred to as contaminant barrier or foil trap) that is positioned in or behind an opening in source chamber 211.
  • the contaminant trap 230 may include a channel structure.
  • Contamination trap 230 may also include a gas barrier or a combination of a gas barrier and a channel structure.
  • the contaminant trap or contaminant barrier 230 further indicated herein at least includes a channel structure, as known in the art.
  • the collector chamber 211 may include a radiation collector CO, which may be a so-called grazing incidence collector.
  • Radiation collector CO has an upstream radiation collector side 251 and a downstream radiation collector side 252. Radiation that traverses collector CO can be reflected off a grating spectral filter 240 to be focused in a virtual source point IF.
  • the virtual source point IF is commonly referred to as the intermediate focus, and the source collector module is arranged such that the intermediate focus IF is located at or near an opening 221 in the enclosing structure 220.
  • the virtual source point IF is an image of the radiation emitting plasma 210.
  • the radiation traverses the illumination system IL, which may include a facetted field mirror device 22 and a facetted pupil mirror device 24 arranged to provide a desired angular distribution of the radiation beam 21, at the patterning device MA, as well as a desired uniformity of radiation intensity at the patterning device MA.
  • the illumination system IL may include a facetted field mirror device 22 and a facetted pupil mirror device 24 arranged to provide a desired angular distribution of the radiation beam 21, at the patterning device MA, as well as a desired uniformity of radiation intensity at the patterning device MA.
  • the source collector module SO may be part of an LPP radiation system as shown in Figure 3.
  • a laser LA is arranged to deposit laser energy into a fuel, such as xenon (Xe), tin (Sn) or lithium (Li), creating the highly ionized plasma 210 with electron temperatures of several 10’s of eV.
  • Xe xenon
  • Sn tin
  • Li lithium
  • the energetic radiation generated during de -excitation and recombination of these ions is emitted from the plasma, collected by a near normal incidence collector optic CO and focused onto the opening 221 in the enclosing structure 220.
  • the projection system PS may comprise a combination of lenses and mirrors.
  • the surfaces of the optical elements are provided with coatings. Over time, the transmission and/or reflection properties of the optical elements can degrade. In particular, transmission loss and/or reflection loss can increase. The degradation is at least partly caused by oxidation of the surfaces of the coatings.
  • the oxidation is at least partly caused by water present on the optical surfaces.
  • Water molecules can be deposited during use of the lithography apparatus 100. Such water molecules can stay on the surfaces in the vacuum environment, e.g. on surfaces of optical components such as mirrors or membranes or on the surface of other components of the lithography apparatus such as an internal surface of a vessel or housing of the lithography apparatus.
  • EUV radiation incident on a surface with water causes the water molecules to turn into hydrogen and oxygen radicals.
  • the oxygen radicals cause the optical coatings to oxidise.
  • Oxidation of mirrors is an irreversible and highly damaging process and leads to a very significant loss in mirror reflection. Due to the restrictively high cost of replacing the mirrors, this ultimately leads to the operation of the lithography apparatus with poor reflection levels and therefore a reduction in productivity. The reduction in lifetime of the mirrors also results in a further distinct economic disadvantage.
  • the lithography apparatus 100 comprises a dynamic gas lock.
  • the dynamic gas lock is configured to prevent a flow of gas between different sections of the lithography apparatus 100.
  • the dynamic gas lock may comprise a hollow part covered by a pellicle (i.e. a transmissive membrane) located in the intervening space.
  • the cleaning device 10 comprises a radiation source 2.
  • the radiation source 2 is configured to supply decontamination radiation 8.
  • the type of radiation source 2 is not particularly limited.
  • the radiation source 2 is a VCSEF.
  • the decontamination radiation 8 has a wavelength range around about 3pm. However, other wavelengths (e.g. other infra-red wavelengths can be used). Suitable wavelengths or ranges of wavelengths for the decontamination radiation 8 fall within the range 2pm to 300mm. In an embodiment the decontamination radiation 8 has a wavelength in the range of from about 100pm to about 300mm (microwave radiation). In an embodiment the decontamination radiation 8 has a wavelength in the range of from about 2pm to about 30pm (infra-red radiation). The wavelength of the decontamination radiation 8 is not particularly limited.
  • the electrostatic clamp clamps the patterning device MA to the support structure MT.
  • the electrostatic clamp is used to clamp the cleaning device 10 to the support structure MT.
  • the cleaning device 10 has the same position as the patterning device MA would have in an exposure process.
  • the cleaning device 10 can be handled in the same way as the patterning device MA.
  • a third nominal size for a patterning device MA is 7.0” x 7.0” x 0.25”.
  • the cleaning device 10 has a side length of about 177.4mm. In an embodiment the cleaning device 10 has a side length of at least 177.0mm. In an embodiment the cleaning device 10 has a side length or at most 177.8mm.
  • the cleaning device 10 comprises an energy source 4.
  • the energy source 4 is configured to supply energy to the radiation source 2 to supply the decontamination radiation 8.
  • the energy source 4 is configured to power the cleaning device 10.
  • the cleaning device 10 can power itself independently of the rest of the lithography apparatus 100.

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  • Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Library & Information Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un dispositif de nettoyage (10) pour un appareil de lithographie, ledit dispositif de nettoyage comprenant : une source de rayonnement (2) conçue pour émettre un rayonnement de décontamination (8) capable d'éliminer l'eau ou un autre contaminant de la surface d'un composant optique (IL ; PS) ou autre composant du système de lithographie ; le dispositif de nettoyage étant conçu pour être serré par une pince (7) qui serre un dispositif de formation de motifs pendant des processus d'exposition réalisés par l'appareil de lithographie.
PCT/EP2020/076283 2019-10-01 2020-09-21 Dispositif de nettoyage, appareil de lithographie, procédé d'élimination d'eau ou d'un autre contaminant et procédé de fabrication de dispositif Ceased WO2021063722A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202080068335.0A CN114503034A (zh) 2019-10-01 2020-09-21 清洁装置、光刻设备、去除水或其它污染物的方法、和器件制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP19200715.1 2019-10-01
EP19200715 2019-10-01

Publications (1)

Publication Number Publication Date
WO2021063722A1 true WO2021063722A1 (fr) 2021-04-08

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PCT/EP2020/076283 Ceased WO2021063722A1 (fr) 2019-10-01 2020-09-21 Dispositif de nettoyage, appareil de lithographie, procédé d'élimination d'eau ou d'un autre contaminant et procédé de fabrication de dispositif

Country Status (2)

Country Link
CN (1) CN114503034A (fr)
WO (1) WO2021063722A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023083582A1 (fr) * 2021-11-10 2023-05-19 Asml Netherlands B.V. Étage utilitaire pour appareil et procédé photolithographiques
WO2024160558A1 (fr) * 2023-01-31 2024-08-08 Asml Netherlands B.V. Élimination de molécules présentes sur des surfaces dans un appareil lithographique euv

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5740580A (en) * 1996-10-11 1998-04-21 United Microelectronics Corporation Stepper vacuum chuck wiper
JPH11167004A (ja) * 1997-12-04 1999-06-22 Nikon Corp 露光装置用投影光学系の光洗浄方法、露光装置、露光方法
JP2005244015A (ja) * 2004-02-27 2005-09-08 Nikon Corp 露光装置、露光装置の光学素子の光洗浄方法、及び微細パターンを有するデバイスの製造方法
EP1783822A1 (fr) * 2004-06-21 2007-05-09 Nikon Corporation Dispositif d"exposition, procédé de nettoyage d"élément de dispositif d"exposition, procédé de maintenance de dispositif d"exposition, dispositif de maintenance, et procédé de fabrication de dispositif
JP2008166613A (ja) * 2006-12-28 2008-07-17 Nikon Corp 清掃方法、露光方法及びデバイス製造方法、清掃部材及びメンテナンス方法、並びに露光装置
WO2009152885A1 (fr) * 2008-06-19 2009-12-23 Carl Zeiss Smt Ag Élimination de particules d'éléments optiques pour une microlithographie

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010039930A1 (de) * 2010-08-30 2012-03-01 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage
WO2014121873A1 (fr) * 2013-02-08 2014-08-14 Asml Netherlands B.V. Source de rayonnement pour un appareil de lithographie optique par ultraviolets extrêmes, et appareil de lithographie comprenant une telle source d'alimentation

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5740580A (en) * 1996-10-11 1998-04-21 United Microelectronics Corporation Stepper vacuum chuck wiper
JPH11167004A (ja) * 1997-12-04 1999-06-22 Nikon Corp 露光装置用投影光学系の光洗浄方法、露光装置、露光方法
JP2005244015A (ja) * 2004-02-27 2005-09-08 Nikon Corp 露光装置、露光装置の光学素子の光洗浄方法、及び微細パターンを有するデバイスの製造方法
EP1783822A1 (fr) * 2004-06-21 2007-05-09 Nikon Corporation Dispositif d"exposition, procédé de nettoyage d"élément de dispositif d"exposition, procédé de maintenance de dispositif d"exposition, dispositif de maintenance, et procédé de fabrication de dispositif
JP2008166613A (ja) * 2006-12-28 2008-07-17 Nikon Corp 清掃方法、露光方法及びデバイス製造方法、清掃部材及びメンテナンス方法、並びに露光装置
WO2009152885A1 (fr) * 2008-06-19 2009-12-23 Carl Zeiss Smt Ag Élimination de particules d'éléments optiques pour une microlithographie

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023083582A1 (fr) * 2021-11-10 2023-05-19 Asml Netherlands B.V. Étage utilitaire pour appareil et procédé photolithographiques
WO2024160558A1 (fr) * 2023-01-31 2024-08-08 Asml Netherlands B.V. Élimination de molécules présentes sur des surfaces dans un appareil lithographique euv

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