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WO2021045587A1 - Rapid thermal processing equipment cooling system - Google Patents

Rapid thermal processing equipment cooling system Download PDF

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Publication number
WO2021045587A1
WO2021045587A1 PCT/KR2020/011999 KR2020011999W WO2021045587A1 WO 2021045587 A1 WO2021045587 A1 WO 2021045587A1 KR 2020011999 W KR2020011999 W KR 2020011999W WO 2021045587 A1 WO2021045587 A1 WO 2021045587A1
Authority
WO
WIPO (PCT)
Prior art keywords
temperature
cooling
air
heat treatment
vortex
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2020/011999
Other languages
French (fr)
Korean (ko)
Inventor
권종석
박민석
윤태준
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Newyoung System Co Ltd
Original Assignee
Newyoung System Co Ltd
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Filing date
Publication date
Application filed by Newyoung System Co Ltd filed Critical Newyoung System Co Ltd
Priority to CN202080002371.7A priority Critical patent/CN112805512A/en
Publication of WO2021045587A1 publication Critical patent/WO2021045587A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B9/00—Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point
    • F25B9/02—Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point using Joule-Thompson effect; using vortex effect
    • F25B9/04—Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point using Joule-Thompson effect; using vortex effect using vortex effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput

Definitions

  • the present invention (Disclosure) relates to a cooling system of a rapid heat treatment facility, and specifically, a cooling of a rapid heat treatment facility capable of improving the process characteristics of the base material through rapid cooling by employing a vortex tube as a cooling gas supply source. It's about the system.
  • a process for manufacturing a semiconductor device includes various heat treatment processes.
  • semiconductor devices have become increasingly highly integrated, the size of the devices required has become smaller, and a single-leaf rapid thermal processing (RTP) facility is mainly used to reduce the overall thermal budget received in the manufacturing process.
  • RTP rapid thermal processing
  • This rapid heat treatment facility not only can perform most of the various processes performed in the existing diffusion furnace, but also heats and cools the wafer at high speed, so impurities re-diffusion and diffusion furnace walls are suitable for VLSI process. There is an advantage in that it can prevent pollution, etc. emitted from it.
  • the rapid heat treatment process performed through the rapid heat treatment facility described above is a rapid heat treatment process (RTA) that can achieve the purpose of recovering crystallinity and stabilizing physical properties of semiconductor devices by heating a wafer, which is a semiconductor substrate, using a high temperature in a process chamber Thermal Annealing) process and RTN (Rapid Thermal Nitridation), RTO (Rapid Thermal Oxidation) and RTS (Rapid Thermal Silicide), which grow nitride, oxide, and silicide films by thermal diffusion at high temperature depending on the type of reaction gas. It includes a thin film forming process such as.
  • the main problem encountered in such a rapid heat treatment facility is the uniformity of the heat treatment temperature for the wafer processed through the rapid heat treatment process. That is, complete control over the heat treatment temperature of the wafer is required for the required high level of device performance, yield, and process repeatability.
  • the rapid heat treatment facility corresponds to its body, and includes a process chamber on one side of which an opening portion is formed through which a wafer, which is a process object, flows in and out.
  • a process tube made of quartz is disposed inside the process chamber to form a space in which a heat treatment process is performed, and a wafer tray including a plurality of support pins for supporting the wafer is disposed inside the process tube.
  • a heating lamp such as a tungsten-halogen lamp or an arc lamp is disposed around the process tube to heat the process tube to form a temperature inside the process tube to a predetermined temperature required for each heat treatment process as described above.
  • the process chamber is provided with a cooling system for supplying low-temperature air to the inside thereof to maintain the inside of the heated process tube within a certain temperature range or to rapidly cool the inside of the process tube.
  • the temperature of the process tube must be rapidly and uniformly heated, as well as rapidly and uniformly cooled.
  • the amount of low-temperature air supplied to the inside of the process chamber to maintain or cool the process tube can be adjusted according to changes in the situation during the process. None, and the supply amount is configured to be determined only by the amount initially set up at each PM (Preventive Maintenance). That is, even if the supply amount of the low-temperature air is different from the initially set-up amount due to an equipment error occurring during the process, there is no means for checking and adjusting the amount. Therefore, there is a problem in that it is difficult to achieve complete temperature control required for uniform heating and cooling of a wafer, which is required for a high level of device performance, yield, and processing repeatability.
  • An object of the present invention is to provide a cooling system for a rapid heat treatment facility capable of improving process characteristics of a base material through rapid cooling by employing a vortex tube as a cooling gas supply source.
  • the cooling system of the rapid heat treatment facility is a vortex tube that separates and outputs compressed air into hot air and low temperature air.
  • Vortex Tube A cooling gas supply source receiving and receiving low temperature air from the vortex tube; And a cooling unit for cooling the inside of a process chamber in which a rapid thermal processing (RTP) is performed using the low-temperature air from the cooling gas supply source.
  • RTP rapid thermal processing
  • the vortex tube includes: a casing in which the compressed air inlet is formed; A vortex generator provided inside the casing and converting the injected compressed air into a primary vortex (V1); A first tube extending long in a traveling direction of the primary vortex V1 and having a first discharge port formed at a tip end thereof; A return valve provided inside the tip of the first tube to convert the primary vortex V1 into a secondary vortex V2; And a second tube extending in a direction opposite to the first tube and having a second discharge port formed at a tip end thereof.
  • V1 primary vortex
  • V1 primary vortex
  • a first tube extending long in a traveling direction of the primary vortex V1 and having a first discharge port formed at a tip end thereof
  • a return valve provided inside the tip of the first tube to convert the primary vortex V1 into a secondary vortex V2
  • a second tube extending in a direction opposite to the first tube and having a second discharge port formed at a tip end thereof.
  • the cooling unit includes: a cooling gas supply line for supplying low-temperature air provided from the cooling gas supply source into the process chamber; A supply amount control valve installed on the cooling gas supply line to control a supply amount of the low-temperature air supplied; A cooling gas discharge line for discharging the low temperature air used for cooling to the outside of the process chamber; A discharge control valve installed on the cooling gas discharge line to adjust the discharge amount of the low temperature air discharged; A temperature measuring device installed on the cooling gas discharge line to measure the temperature of the low-temperature air discharged; And a controller controlling the supply amount control valve and the discharge control valve to control the internal temperature of the process chamber.
  • the internal temperature control of the process chamber is performed through the control of the controller based on the temperature value of the low temperature air measured through the temperature measuring device. It is achieved by controlling the supply amount and discharge amount of low-temperature air.
  • a heating gas supply source receiving and receiving the high temperature air from the vortex tube; And an auxiliary heating unit that assists heating the inside of the process chamber by using the hot air from the heating gas supply source.
  • the controller senses the temperature of the high-temperature air and adjusts the pressure of the compressed air based on the sensed high-temperature air temperature.
  • the compressed air inlet is provided at the compressed air inlet, and the inner diameter of the compressed air inlet is adjusted according to the pressure of the compressed air injected into the casing. It has a; compression control unit for maintaining a constant pressure.
  • the cooling gas for cooling the process chamber is generated using a vortex tube, the temperature of the cooling gas is lowered to enable rapid cooling, thereby improving the process characteristics of the base material, and the rapid heat treatment process equipment. Tack time is improved.
  • FIG. 1 is a block diagram showing an embodiment of a cooling system of a rapid heat treatment facility according to the present invention.
  • Figure 2 is a view showing the process chamber in Figure 1;
  • Figure 3 is a view showing the configuration of the vortex tube in Figure 1;
  • Figure 4 is a view for explaining the pressure control operation of the compressed air in Figure 1;
  • FIG. 5 is a view for explaining an operation of constantly adjusting the pressure of compressed air in FIG. 1.
  • FIG. 1 is a block diagram showing an embodiment of a cooling system of a rapid heat treatment facility according to the present invention
  • FIG. 2 is a view showing a process chamber in FIG. 1
  • FIG. 3 is a view showing the configuration of a vortex tube in FIG.
  • the cooling system 100 of the rapid heat treatment facility includes a process chamber 110, a vortex tube 120, a cooling gas supply source 130, and a cooling unit 140. Includes.
  • the process chamber 110 refers to a space in which a rapid thermal processing (RTP) process is performed.
  • RTP rapid thermal processing
  • a cooling gas is supplied into the process chamber 110 for cooling, and generally used cooling gas is N 2 or air at room temperature. However, in this case, there is a limit to fast cooling.
  • the main feature of the present invention is that the vortex tube 120 is employed to reduce the temperature of the cooling gas, thereby enabling rapid cooling.
  • the vortex tube 120 is configured to separate and output compressed air into hot air and low temperature air.
  • the cooling gas supply source 130 communicates with the process chamber 110 and receives and receives low-temperature air from the vortex tube 120.
  • the cooling unit 140 is configured to cool the inside of the process chamber 110 by using low-temperature air from the cooling gas supply source 130.
  • the cooling gas for cooling the process chamber is generated using the vortex tube, it is possible to change according to the required cooling performance, and the volume of the cooling device can be greatly reduced.
  • the vortex tube 120 may include a casing 121, a vortex generator 122, a first tube 122, a second tube 123, and a return valve 124.
  • the casing 121 constitutes the outer shape of the vortex tube 120, and a compressed air injection port 121a is formed.
  • the compressed air may be compressed to have a pressure set by the compressor 101.
  • the vortex generator 122 is provided in the casing 121 and converts the injected compressed air into the primary vortex V1.
  • the first tube 122 is elongated in the traveling direction of the primary vortex V1 and a first discharge port 122a is formed at a tip end thereof.
  • the return valve 124 is provided inside the tip of the first tube 122 and converts the primary vortex V1 into the secondary vortex V2.
  • the second tube 123 extends in a direction opposite to the first tube 122 and has a second discharge port 123a formed at its tip.
  • the primary vortex V1 converted through the vortex generator 122 is transported along the vortex tube 120, and some of it is discharged to the outside through the first discharge port 122a provided at one end thereof, and the rest is the return valve 17 ) And converted into a secondary vortex (V2) inside the primary vortex (V1).
  • the secondary vortex V2 is transported along the vortex tube 120 and then discharged to the outside through the second discharge port 123a provided at the other end thereof.
  • the first and second vortex (V2) is rotated in the same direction and at the same angular velocity, so that the air particles of the primary vortex (V1) located on the outside are Compared to that, it moves at a higher speed, and accordingly, the kinetic energy of the air particles of the secondary vortex (V2) having a slow motion is converted into thermal energy.
  • the generated thermal energy lowers the temperature of the secondary vortex V2 and increases the temperature of the primary vortex V1. As a result, the temperature of the compressed air discharged through the first discharge port 122a is high, and the temperature of the compressed air discharged through the second discharge port 18 is low.
  • the cooling unit 140 includes a cooling gas supply line 141, a supply amount control valve 142, a cooling gas discharge line 143, a discharge control valve 144, a temperature measuring device 145, and a controller. Consists of 146.
  • the cooling gas supply line 141 is configured to supply low-temperature air provided from the cooling gas supply source 130 into the process chamber 110.
  • the supply amount control valve 142 is installed on the cooling gas supply line 141 to control a supply amount of supplied low-temperature air.
  • the cooling gas discharge line 143 is a configuration for discharging low-temperature air used for cooling to the outside of the process chamber 110.
  • the discharge control valve 144 is installed on the cooling gas discharge line 143 to control the discharge amount of low-temperature air discharged.
  • the temperature measuring device 145 is installed on the cooling gas discharge line 143 and measures the temperature of the low-temperature air discharged.
  • the controller 146 is configured to control the supply amount control valve 142 and the discharge amount control valve 144 to control the internal temperature of the process chamber 110.
  • the internal temperature control of the process chamber 110 is performed by controlling the supply amount and discharge amount of low-temperature air through the control of the controller 146 based on the temperature value of the low-temperature air measured through the temperature measuring device 145. .
  • the cooling system 100 of the rapid heat treatment facility uses a heating gas supply source receiving and receiving high temperature air from the vortex tube 120 and a process chamber ( 110) It is desirable to have an auxiliary heating unit to assist in heating the inside.
  • the high-temperature air supplied from the heating gas supply source supplements the heat source supplied for rapid thermal processing (RTP).
  • RTP rapid thermal processing
  • the aid of a rapid thermal processing (RTP) process using high-temperature air consists of heating the wall of the process chamber 110.
  • a heating gas pipeline formed to pass through the interior of the wall constituting the process chamber 110 may be provided.
  • FIG. 4 is a view for explaining the pressure control operation of compressed air in FIG.
  • a pressure sensor PS that senses the pressure of compressed air flowing into the vortex tube 120
  • a first temperature sensor TS1 that senses the temperature of the cooling gas flowing into the process chamber 110
  • the process chamber It has a second temperature sensor (TS2) for sensing the temperature of the cooling gas discharged from 110, it may have a controller 146 that controls the compressor 101 based on these data.
  • the controller 146 is provided to sense a temperature of high-temperature air and adjust the pressure of compressed air based on the sensed high-temperature air temperature.
  • the temperature of the cooling gas can be adjusted, that is, the cooling capacity can be varied.
  • FIG. 5 is a view for explaining an operation of constantly adjusting the pressure of compressed air in FIG. 1.
  • the vortex tube 120 When the pressure (flow rate) of the supplied compressed air changes, the vortex tube 120 has high energy separation efficiency only in a specific section, and its efficiency is very low in other sections, making it unsuitable for use as a cooling means.
  • the vortex tube 120 exhibits a high energy separation efficiency (a temperature difference of the discharged compressed air) only when the pressure of the supplied compressed air, that is, a flow rate is constant.
  • the compressed air injection port 121a provided in the casing 121 of the vortex tube 120, and adjusts the inner diameter of the compressed air injection port 121a according to the pressure of the compressed air injected into the casing 121 It is preferable to have a compression control unit that constantly maintains the pressure of compressed air flowing into the casing 121.

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Abstract

Disclosed is a rapid thermal processing (RTP) equipment cooling system comprising: a vortex tube for separating compressed air into high-temperature air and low-temperature air and discharging same; a cooling gas supply source for receiving the low-temperature air from the vortex tube and accommodating same; and a cooling unit for cooling the inside of a process chamber, in which RTP is performed, by using the low-temperature air from the cooling gas supply source.

Description

급속 열처리 설비의 냉각시스템Cooling system of rapid heat treatment facility

본 발명(Disclosure)은, 급속 열처리 설비의 냉각시스템에 관한 것으로서, 구체적으로 보텍스 튜브(vortex tube)를 냉각가스 공급원으로 채용하여 빠른 냉각을 통한 모재의 공정특성을 향상시킬 수 있는 급속 열처리 설비의 냉각시스템에 관한 것이다.The present invention (Disclosure) relates to a cooling system of a rapid heat treatment facility, and specifically, a cooling of a rapid heat treatment facility capable of improving the process characteristics of the base material through rapid cooling by employing a vortex tube as a cooling gas supply source. It's about the system.

여기서는, 본 발명에 관한 배경기술이 제공되며, 이들이 반드시 공지기술을 의미하는 것은 아니다(This section provides background information related to the present disclosure which is not necessarily prior art).Here, background technology related to the present invention is provided, and these do not necessarily mean known technology (This section provides background information related to the present disclosure which is not necessarily prior art).

일반적으로 반도체 소자의 제조를 위한 공정에는 여러 가지 열처리 공정이 포함된다. 최근 반도체 소자가 점점 고집적화됨에 따라 요구되는 소자의 크기가 작아지게 되어 제조 공정에서 받는 전체 열다발(thermal budget)을 줄이기 위해 매엽식 급속 열처리(RTP; Rapid Thermal Processing) 설비가 주로 이용되고 있다.In general, a process for manufacturing a semiconductor device includes various heat treatment processes. Recently, as semiconductor devices have become increasingly highly integrated, the size of the devices required has become smaller, and a single-leaf rapid thermal processing (RTP) facility is mainly used to reduce the overall thermal budget received in the manufacturing process.

이러한 급속 열처리 설비는 기존의 확산로에서 수행하던 다양한 공정을 대부분 수행할 수 있을 뿐만 아니라, 웨이퍼에 대한 가열과 냉각이 고속으로 이루어지므로 초고집적 회로(VLSI) 공정에 적합한 불순물 재확산과 확산로 벽면으로부터 방출되는 오염 등을 방지할 수 있는 장점이 있다.This rapid heat treatment facility not only can perform most of the various processes performed in the existing diffusion furnace, but also heats and cools the wafer at high speed, so impurities re-diffusion and diffusion furnace walls are suitable for VLSI process. There is an advantage in that it can prevent pollution, etc. emitted from it.

상기한 급속 열처리 설비를 통해 수행되는 급속 열처리 공정은 프로세스 챔버(Furnace)의 고온을 이용하여 반도체 기판인 웨이퍼를 가열함으로써 반도체 소자의 결정성 회복 및 물성 안정화 등의 목적을 달성할 수 있는 RTA(Rapid Thermal Annealing)공정과, 반응가스의 종류에 따라 나이트라이드막, 산화막 및 실리사이드막 등을 고온 상태에서 열확산에 의해서 성장시키는 RTN(Rapid Thermal Nitridation), RTO(Rapid Thermal Oxidation) 및 RTS(Rapid Thermal Silicide) 등의 박막(薄膜) 형성공정을 포함한다.The rapid heat treatment process performed through the rapid heat treatment facility described above is a rapid heat treatment process (RTA) that can achieve the purpose of recovering crystallinity and stabilizing physical properties of semiconductor devices by heating a wafer, which is a semiconductor substrate, using a high temperature in a process chamber Thermal Annealing) process and RTN (Rapid Thermal Nitridation), RTO (Rapid Thermal Oxidation) and RTS (Rapid Thermal Silicide), which grow nitride, oxide, and silicide films by thermal diffusion at high temperature depending on the type of reaction gas. It includes a thin film forming process such as.

한편, 이와 같은 급속 열처리 설비에서 접하게 되는 주된 문제점은 급속 열처리 공정을 통해 처리되는 웨이퍼에 대한 열처리 온도의 균일성이다. 즉, 요구되는 높은 레벨의 디바이스 성능, 수율, 및 처리 반복성 등을 위해서는 웨이퍼의 열처리 온도에 대한 완전한 제어가 이루어져야 한다.On the other hand, the main problem encountered in such a rapid heat treatment facility is the uniformity of the heat treatment temperature for the wafer processed through the rapid heat treatment process. That is, complete control over the heat treatment temperature of the wafer is required for the required high level of device performance, yield, and process repeatability.

종래의 급속 열처리 설비에 대해 간략히 살펴보면, 상기 급속 열처리 설비는 그 몸체에 해당하며, 일측에 공정 대상체인 웨이퍼가 유출입되는 개방부가 형성된 프로세스 챔버를 구비한다. 상기 프로세스 챔버의 내부에는 열처리 공정이 수행되는 공간을 형성하는 석영 재질의 공정 튜브가 배치되고, 상기 공정 튜브의 내부에는 상기 웨이퍼를 지지하기 위한 복수개의 지지핀을 구비한 웨이퍼 트레이가 배치된다. 한편, 상기 공정 튜브의 주변에는 상기 공정 튜브를 가열함으로써 그 내부의 온도를 상기한 바와 같은 각각의 열처리 공정에 필요한 소정 온도로 형성시키기 위한 텅스텐-할로겐 램프나 아크 램프 등과 같은 가열 램프가 배치된다. Briefly looking at the conventional rapid heat treatment facility, the rapid heat treatment facility corresponds to its body, and includes a process chamber on one side of which an opening portion is formed through which a wafer, which is a process object, flows in and out. A process tube made of quartz is disposed inside the process chamber to form a space in which a heat treatment process is performed, and a wafer tray including a plurality of support pins for supporting the wafer is disposed inside the process tube. On the other hand, a heating lamp such as a tungsten-halogen lamp or an arc lamp is disposed around the process tube to heat the process tube to form a temperature inside the process tube to a predetermined temperature required for each heat treatment process as described above.

또한, 상기 프로세스 챔버에는 그 내부로 저온의 공기를 공급하여 상기한 바와 같이 가열되는 공정 튜브의 내부를 일정 온도 범위 내로 유지시키거나, 급속 냉각시키기 위한 냉각 시스템이 구비된다.In addition, the process chamber is provided with a cooling system for supplying low-temperature air to the inside thereof to maintain the inside of the heated process tube within a certain temperature range or to rapidly cool the inside of the process tube.

상기한 바와 같은 급속 열처리 설비를 통해 수행되는 열처리 공정은 상당한 고온에서 급속하게 이루어져야 하기 때문에 상기 공정 튜브의 온도를 급속하게 그리고 균일하게 가열해야 할 뿐만 아니라, 빠른 시간 내에 그리고 균일하게 냉각시켜야 한다.Since the heat treatment process performed through the rapid heat treatment facility as described above must be performed rapidly at a considerable high temperature, the temperature of the process tube must be rapidly and uniformly heated, as well as rapidly and uniformly cooled.

그런데 종래의 급속 열처리 설비에 있어서, 상기 냉각 시스템의 경우 상기 공정 튜브를 일정 온도로 유지시키거나 냉각시키도록 상기 프로세스 챔버 내부로 공급시키는 저온의 공기의 공급량을 공정 진행 중 그 상황 변화에 따라 조정할 수 없고, 그 공급량은 오직 PM(Preventive Maintenance)시 마다 초기 셋업(Setup)된 양에 의해 결정되도록 구성되어 있다. 즉, 공정 진행중 발생하는 설비 에러에 의해 상기 저온의 공기의 공급 량이 상기 초기 셋업(Setup)된 양과 차이가 생기더라도 이를 확인 및 조정할 수 있는 수단이 마련되어 있지 않다. 때문에 높은 레벨의 디바이스 성능, 수율, 및 처리 반복성 등을 위해 요구되는 웨이퍼의 균일한 가열 및 냉각에 필요한 완전한 온도 제어가 이루어지기 어려운 문제점이 있다.However, in the conventional rapid heat treatment facility, in the case of the cooling system, the amount of low-temperature air supplied to the inside of the process chamber to maintain or cool the process tube can be adjusted according to changes in the situation during the process. None, and the supply amount is configured to be determined only by the amount initially set up at each PM (Preventive Maintenance). That is, even if the supply amount of the low-temperature air is different from the initially set-up amount due to an equipment error occurring during the process, there is no means for checking and adjusting the amount. Therefore, there is a problem in that it is difficult to achieve complete temperature control required for uniform heating and cooling of a wafer, which is required for a high level of device performance, yield, and processing repeatability.

본 발명(Disclosure)은, 보텍스 튜브(vortex tube)를 냉각가스 공급원으로 채용하여 빠른 냉각을 통한 모재의 공정특성을 향상시킬 수 있는 급속 열처리 설비의 냉각시스템의 제공을 일 목적으로 한다.An object of the present invention is to provide a cooling system for a rapid heat treatment facility capable of improving process characteristics of a base material through rapid cooling by employing a vortex tube as a cooling gas supply source.

여기서는, 본 발명의 전체적인 요약(Summary)이 제공되며, 이것이 본 발명의 외연을 제한하는 것으로 이해되어서는 아니 된다(This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all of its features).Here, a summary of the present invention is provided, and this section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all of its features).

상기한 과제의 해결을 위해, 본 발명을 기술하는 여러 관점들 중 어느 일 관점(aspect)에 따른 급속 열처리 설비의 냉각시스템은, 압축공기를 고온의 공기와 저온의 공기로 분리하여 출력하는 보텍스 튜브(Vortex Tube); 상기 보텍스 튜브로부터 저온의 공기를 공급받아 수용하는 냉각가스 공급원; 및 상기 냉각가스 공급원으로부터 상기 저온의 공기를 이용하여 급속 열처리 공정(RTP; Rapid Thermal Processing)이 수행되는 프로세스 챔버 내부를 냉각시키는 냉각 유닛;을 포함한다.In order to solve the above problems, the cooling system of the rapid heat treatment facility according to one of the various aspects describing the present invention is a vortex tube that separates and outputs compressed air into hot air and low temperature air. (Vortex Tube); A cooling gas supply source receiving and receiving low temperature air from the vortex tube; And a cooling unit for cooling the inside of a process chamber in which a rapid thermal processing (RTP) is performed using the low-temperature air from the cooling gas supply source.

본 발명의 일 관점(aspect)에 따른 급속 열처리 설비의 냉각시스템에서, 상기 보텍스 튜브는, 상기 압축공기 주입구가 형성되는 케이싱; 상기 케이싱의 내부에 마련되어 주입된 상기 압축공기를 1차 보텍스(V1)로 변환시키는 보텍스 제너레이터; 상기 1차 보텍스(V1)의 진행방향으로 길게 연장되고 선단에 제1 토출구가 형성되는 제1 튜브; 상기 제1 튜브의 선단 내측에 마련되어 상기 1차 보텍스(V1)를 2차 보텍스(V2)로 변환시키는 회송밸브; 및 상기 제1 튜브의 반대방향으로 연장되고 선단에 제2 토출구가 형성되는 제2 튜브;를 가진다.In the cooling system of the rapid heat treatment facility according to an aspect of the present invention, the vortex tube includes: a casing in which the compressed air inlet is formed; A vortex generator provided inside the casing and converting the injected compressed air into a primary vortex (V1); A first tube extending long in a traveling direction of the primary vortex V1 and having a first discharge port formed at a tip end thereof; A return valve provided inside the tip of the first tube to convert the primary vortex V1 into a secondary vortex V2; And a second tube extending in a direction opposite to the first tube and having a second discharge port formed at a tip end thereof.

본 발명의 일 관점(aspect)에 따른 급속 열처리 설비의 냉각시스템에서, 상기 냉각 유닛은, 상기 냉각가스 공급원으로부터 제공되는 저온의 공기를 프로세스 챔버 내부로 공급하는 냉각가스 공급라인; 상기 냉각가스 공급라인 상에 설치되어 공급되는 상기 저온의 공기의 공급량을 조절하는 공급량 조절밸브; 냉각에 사용된 상기 저온의 공기를 상기 프로세스 챔버의 외부로 배출하기 위한 냉각가스 배출라인; 상기 냉각가스 배출라인 상에 설치되어 배출되는 상기 저온의 공기의 배출량을 조절하는 배출량 조절밸브; 상기 냉각가스 배출라인 상에 설치되어 배출되는 상기 저온의 공기의 온도를 측정하는 온도 측정기; 및 상기 공급량 조절밸브 및 상기 배출량 조절밸브를 제어하여 상기 프로세스 챔버의 내부 온도를 조절하는 컨트롤러;를 포함한다.In the cooling system of a rapid heat treatment facility according to an aspect of the present invention, the cooling unit includes: a cooling gas supply line for supplying low-temperature air provided from the cooling gas supply source into the process chamber; A supply amount control valve installed on the cooling gas supply line to control a supply amount of the low-temperature air supplied; A cooling gas discharge line for discharging the low temperature air used for cooling to the outside of the process chamber; A discharge control valve installed on the cooling gas discharge line to adjust the discharge amount of the low temperature air discharged; A temperature measuring device installed on the cooling gas discharge line to measure the temperature of the low-temperature air discharged; And a controller controlling the supply amount control valve and the discharge control valve to control the internal temperature of the process chamber.

본 발명의 일 관점(aspect)에 따른 급속 열처리 설비의 냉각시스템에서, 상기 프로세스 챔버의 내부 온도 조절은 상기 온도 측정기를 통해 측정된 상기 저온의 공기의 온도값을 기초로 상기 컨트롤러의 제어를 통한 상기 저온의 공기의 공급량 및 배출량 조절을 통해 이루어진다.In the cooling system of the rapid heat treatment facility according to an aspect of the present invention, the internal temperature control of the process chamber is performed through the control of the controller based on the temperature value of the low temperature air measured through the temperature measuring device. It is achieved by controlling the supply amount and discharge amount of low-temperature air.

본 발명의 일 관점(aspect)에 따른 급속 열처리 설비의 냉각시스템에서, 상기 보텍스 튜브로부터 상기 고온의 공기를 공급받아 수용하는 가열가스 공급원; 및 상기 가열가스 공급원으로부터 상기 고온의 공기를 이용하여 상기 프로세스 챔버 내부의 가열을 보조하는 보조 가열 유닛;을 가진다.In the cooling system of a rapid heat treatment facility according to an aspect of the present invention, a heating gas supply source receiving and receiving the high temperature air from the vortex tube; And an auxiliary heating unit that assists heating the inside of the process chamber by using the hot air from the heating gas supply source.

본 발명의 일 관점(aspect)에 따른 급속 열처리 설비의 냉각시스템에서, 상기 컨트롤러는, 상기 고온의 공기의 온도를 감지하고, 감지된 고온의 공기 온도를 기준으로 상기 압축공기의 압력을 조절한다.In the cooling system of a rapid heat treatment facility according to an aspect of the present invention, the controller senses the temperature of the high-temperature air and adjusts the pressure of the compressed air based on the sensed high-temperature air temperature.

본 발명의 일 관점(aspect)에 따른 급속 열처리 설비의 냉각시스템에서, 상기 압축공기 주입구에 구비되며, 상기 케이싱으로 주입되는 압축공기의 압력에 따라 상기 압축공기 주입구의 내경을 조절하여 상기 압축공기의 압력을 일정하게 유지시키는 압축조절부;를 가진다.In the cooling system of the rapid heat treatment facility according to an aspect of the present invention, the compressed air inlet is provided at the compressed air inlet, and the inner diameter of the compressed air inlet is adjusted according to the pressure of the compressed air injected into the casing. It has a; compression control unit for maintaining a constant pressure.

본 발명에 따르면, 프로세스 챔버의 냉각을 위한 냉각가스를 보텍스 튜브를 이용하여 생성하므로, 냉각가스의 온도가 낮아져 빠른 냉각이 가능하게 되고, 그에 의해 모재의 공정특성이 향상되고, 급속 열처리 공정장비의 Tack time이 향상된다. According to the present invention, since the cooling gas for cooling the process chamber is generated using a vortex tube, the temperature of the cooling gas is lowered to enable rapid cooling, thereby improving the process characteristics of the base material, and the rapid heat treatment process equipment. Tack time is improved.

또한, 보텍스 튜브에 의해 요구되는 냉각성능에 따라 가변이 가능하고, 냉각장치의 부피를 크게 감소시킬 수 있다.In addition, it can be varied according to the cooling performance required by the vortex tube, and the volume of the cooling device can be greatly reduced.

본 발명에 따르면, 보텍스 튜브에서 생성되는 가열가스를 이용하여 프로세스 챔버에서 이루어지는 RTP 공정의 가열을 보조할 수 있는 이점을 가진다.According to the present invention, it is possible to assist the heating of the RTP process in the process chamber by using the heating gas generated in the vortex tube.

도 1은 본 발명에 따른 급속 열처리 설비의 냉각시스템의 일 실시형태를 보인 구성도.1 is a block diagram showing an embodiment of a cooling system of a rapid heat treatment facility according to the present invention.

도 2는 도 1에서 프로세스 챔버를 보인 도면.Figure 2 is a view showing the process chamber in Figure 1;

도 3은 도 1에서 보텍스 튜브의 구성으로 보인 도면.Figure 3 is a view showing the configuration of the vortex tube in Figure 1;

도 4는 도 1에서 압축공기의 압력조절동작을 설명하기 위한 도면.Figure 4 is a view for explaining the pressure control operation of the compressed air in Figure 1;

도 5는 도 1에서 압축공기의 압력을 일정하게 조절하는 동작을 설명하기 위한 도면.FIG. 5 is a view for explaining an operation of constantly adjusting the pressure of compressed air in FIG. 1.

이하, 본 발명에 따른 급속 열처리 설비의 냉각시스템을 구현한 실시형태를 도면을 참조하여 자세히 설명한다.Hereinafter, an embodiment implementing the cooling system of the rapid heat treatment facility according to the present invention will be described in detail with reference to the drawings.

다만, 본 발명의 본질적인(intrinsic) 기술적 사상은 이하에서 설명되는 실시형태에 의해 그 실시 가능 형태가 제한된다고 할 수는 없고, 본 발명의 본질적인(intrinsic) 기술적 사상에 기초하여 통상의 기술자에 의해 이하에서 설명되는 실시형태를 치환 또는 변경의 방법으로 용이하게 제안될 수 있는 범위를 포섭함을 밝힌다. However, the intrinsic technical idea of the present invention cannot be said to be limited by the embodiments to be described below, and the intrinsic technical idea of the present invention is given below by a person skilled in the art. It is revealed that the embodiment described in the above is encompassed by a range that can be easily proposed by a method of substitution or modification.

또한, 이하에서 사용되는 용어는 설명의 편의를 위하여 선택한 것이므로, 본 발명의 본질적인(intrinsic) 기술적 사상을 파악하는 데 있어서, 사전적 의미에 제한되지 않고 본 발명의 기술적 사상에 부합되는 의미로 적절히 해석되어야 할 것이다. In addition, since the terms used below are selected for convenience of explanation, in grasping the intrinsic technical idea of the present invention, it is not limited to the dictionary meaning and is appropriately interpreted as a meaning consistent with the technical idea of the present invention. It should be.

도 1은 본 발명에 따른 급속 열처리 설비의 냉각시스템의 일 실시형태를 보인 구성도, 도 2는 도 1에서 프로세스 챔버를 보인 도면, 도 3은 도 1에서 보텍스 튜브의 구성으로 보인 도면이다.1 is a block diagram showing an embodiment of a cooling system of a rapid heat treatment facility according to the present invention, FIG. 2 is a view showing a process chamber in FIG. 1, and FIG. 3 is a view showing the configuration of a vortex tube in FIG.

도 1 내지 도 3을 참조하면, 본 실시형태에 따른 급속 열처리 설비의 냉각시스템(100)은, 프로세스 챔버(110), 보텍스 튜브(120), 냉각가스 공급원(130), 냉각 유닛(140)을 포함한다.1 to 3, the cooling system 100 of the rapid heat treatment facility according to the present embodiment includes a process chamber 110, a vortex tube 120, a cooling gas supply source 130, and a cooling unit 140. Includes.

프로세스 챔버(110)는, 급속 열처리 공정(RTP; Rapid Thermal Processing)이 수행되는 공간을 의미한다.The process chamber 110 refers to a space in which a rapid thermal processing (RTP) process is performed.

프로세스 챔버(110) 내부에서의 급속 열처리 공정은, 급속 열처리를 위한 승온, 고온 상태의 유지 및 모재 특성의 향상을 위한 냉각이 순차로 진행된다.In the rapid heat treatment process inside the process chamber 110, heating for rapid heat treatment, maintenance of a high temperature state, and cooling for improvement of base material properties are sequentially performed.

냉각을 위해 프로세스 챔버(110) 내부로 냉각가스를 공급하는데, 일반적으로 사용되는 냉각가스는 상온의 N2 또는 공기가 사용된다. 그러나 이 경우 빠른 냉각에 한계를 가진다. A cooling gas is supplied into the process chamber 110 for cooling, and generally used cooling gas is N 2 or air at room temperature. However, in this case, there is a limit to fast cooling.

본 발명은, 보텍스 튜브(120)를 채용하여 냉각가스의 온도를 낮춤으로써 빠른 냉각이 가능하게 한 것을 주된 특징으로 한다. The main feature of the present invention is that the vortex tube 120 is employed to reduce the temperature of the cooling gas, thereby enabling rapid cooling.

보텍스 튜브(120)는, 압축공기를 고온의 공기와 저온의 공기로 분리하여 출력하는 구성이다.The vortex tube 120 is configured to separate and output compressed air into hot air and low temperature air.

냉각가스 공급원(130)은 프로세스 챔버(110)와 연통되며, 보텍스 튜브(120)로부터 저온의 공기를 공급받아 수용하는 구성이다.The cooling gas supply source 130 communicates with the process chamber 110 and receives and receives low-temperature air from the vortex tube 120.

냉각 유닛(140)은, 냉각가스 공급원(130)으로부터 저온의 공기를 이용하여 프로세스 챔버(110) 내부를 냉각시키는 구성이다.The cooling unit 140 is configured to cool the inside of the process chamber 110 by using low-temperature air from the cooling gas supply source 130.

이에 의해, 프로세스 챔버의 냉각을 위한 냉각가스를 보텍스 튜브를 이용하여 생성하므로, 요구되는 냉각성능에 따라 가변이 가능하고, 냉각장치의 부피를 크게 감소시킬 수 있다.Accordingly, since the cooling gas for cooling the process chamber is generated using the vortex tube, it is possible to change according to the required cooling performance, and the volume of the cooling device can be greatly reduced.

여기서, 보텍스 튜브(120)는, 케이싱(121), 보텍스 제너레이터(122), 제1 튜브(122), 제2 튜브(123), 회송밸브(124)를 포함하여 구성될 수 있다.Here, the vortex tube 120 may include a casing 121, a vortex generator 122, a first tube 122, a second tube 123, and a return valve 124.

케이싱(121)은, 보텍스 튜브(120)의 외형을 구성하며, 압축공기 주입구(121a)가 형성된다.The casing 121 constitutes the outer shape of the vortex tube 120, and a compressed air injection port 121a is formed.

압축공기는 압축기(101)에 의해 설정된 압력을 가지도록 압축될 수 있다.The compressed air may be compressed to have a pressure set by the compressor 101.

보텍스 제너레이터(122)는, 케이싱(121)의 내부에 마련되어 주입된 압축공기를 1차 보텍스(V1)로 변환시키는 구성이다.The vortex generator 122 is provided in the casing 121 and converts the injected compressed air into the primary vortex V1.

제1 튜브(122)는, 1차 보텍스(V1)의 진행방향으로 길게 연장되고 선단에 제1 토출구(122a)가 형성된다.The first tube 122 is elongated in the traveling direction of the primary vortex V1 and a first discharge port 122a is formed at a tip end thereof.

회송밸브(124)는, 제1 튜브(122)의 선단 내측에 마련되어 1차 보텍스(V1)를 2차 보텍스(V2)로 변환시키는 구성이다.The return valve 124 is provided inside the tip of the first tube 122 and converts the primary vortex V1 into the secondary vortex V2.

제2 튜브(123)는, 제1 튜브(122)의 반대방향으로 연장되고 선단에 제2 토출구(123a)가 형성되는 구성이다.The second tube 123 extends in a direction opposite to the first tube 122 and has a second discharge port 123a formed at its tip.

도 3을 참조하여, 보텍스 튜브(120)에 의한 열 분리 현상을 설명하면, 보텍스 튜브(120)의 압축공기 주입구(121a)를 통해 압축공기가 주입되면, 주입된 압축공기는 보텍스 제너레이터(122)를 통과하며 수백만 RPM의 초고속(음속)으로 회전하는 1차 보텍스(V1)로 변환된다.Referring to FIG. 3, when the thermal separation phenomenon caused by the vortex tube 120 is described, when compressed air is injected through the compressed air inlet 121a of the vortex tube 120, the injected compressed air is the vortex generator 122 It is converted into a primary vortex (V1) that rotates at ultra-high speed (sonic speed) of several million RPMs while passing through.

보텍스 제너레이터(122)를 거쳐 변환된 1차 보텍스(V1)는 보텍스 튜브(120)를 따라 이송되다가 그 일단에 마련된 제1 토출구(122a)를 통해 일부는 외부로 배출되고, 나머지는 회송밸브(17)에 의해 회송되어 1차 보텍스(V1) 안쪽에서 2차 보텍스(V2)로 변환된다.The primary vortex V1 converted through the vortex generator 122 is transported along the vortex tube 120, and some of it is discharged to the outside through the first discharge port 122a provided at one end thereof, and the rest is the return valve 17 ) And converted into a secondary vortex (V2) inside the primary vortex (V1).

그리고 2차 보텍스(V2)는 보텍스 튜브(120)를 따라 이송되다가 그 타단에 마련된 제2 토출구(123a)를 통해 외부로 배출된다.In addition, the secondary vortex V2 is transported along the vortex tube 120 and then discharged to the outside through the second discharge port 123a provided at the other end thereof.

이때, 1,2차 보텍스(V2)는 서로 동일한 방향 및 동일한 각속도로 회전되는 바, 외측에 위치된 1차 보텍스(V1)의 공기입자가 내측에 위치된 2차 보텍스(V2)의 공기입자에 비하여 더 빠른 속도로 운동하게 되고, 그에 따라 운동 속도가 느린 2차 보텍스(V2)의 공기입자가 가진 운동에너지는 열에너지로 변환된다.At this time, the first and second vortex (V2) is rotated in the same direction and at the same angular velocity, so that the air particles of the primary vortex (V1) located on the outside are Compared to that, it moves at a higher speed, and accordingly, the kinetic energy of the air particles of the secondary vortex (V2) having a slow motion is converted into thermal energy.

이렇게 생성된 열에너지는 2차 보텍스(V2)의 온도를 저하시키고 1차 보텍스(V1)의 온도를 상승시킨다. 그 결과로 제1 토출구(122a)를 통해 배출되는 압축공기는 온도가 높고, 제2 토출구(18)를 통해 배출되는 압축공기는 온도가 낮다.The generated thermal energy lowers the temperature of the secondary vortex V2 and increases the temperature of the primary vortex V1. As a result, the temperature of the compressed air discharged through the first discharge port 122a is high, and the temperature of the compressed air discharged through the second discharge port 18 is low.

한편, 본 실시형태에서 냉각 유닛(140)은, 냉각가스 공급라인(141), 공급량 조절밸브(142), 냉각가스 배출라인(143), 배출량 조절밸브(144), 온도 측정기(145), 컨트롤러(146)를 포함하여 구성된다.Meanwhile, in this embodiment, the cooling unit 140 includes a cooling gas supply line 141, a supply amount control valve 142, a cooling gas discharge line 143, a discharge control valve 144, a temperature measuring device 145, and a controller. Consists of 146.

냉각가스 공급라인(141)은, 냉각가스 공급원(130)으로부터 제공되는 저온의 공기를 프로세스 챔버(110) 내부로 공급하는 구성이다.The cooling gas supply line 141 is configured to supply low-temperature air provided from the cooling gas supply source 130 into the process chamber 110.

공급량 조절밸브(142)는, 냉각가스 공급라인(141) 상에 설치되어 공급되는 저온의 공기의 공급량을 조절하는 구성이다.The supply amount control valve 142 is installed on the cooling gas supply line 141 to control a supply amount of supplied low-temperature air.

냉각가스 배출라인(143)은, 냉각에 사용된 저온의 공기를 프로세스 챔버(110)의 외부로 배출하기 위한 구성이다.The cooling gas discharge line 143 is a configuration for discharging low-temperature air used for cooling to the outside of the process chamber 110.

배출량 조절밸브(144)는, 냉각가스 배출라인(143) 상에 설치되어 배출되는 저온의 공기의 배출량을 조절하는 구성이다.The discharge control valve 144 is installed on the cooling gas discharge line 143 to control the discharge amount of low-temperature air discharged.

온도 측정기(145)는, 냉각가스 배출라인(143) 상에 설치되어 배출되는 저온의 공기의 온도를 측정한다.The temperature measuring device 145 is installed on the cooling gas discharge line 143 and measures the temperature of the low-temperature air discharged.

컨트롤러(146)는, 공급량 조절밸브(142) 및 배출량 조절밸브(144)를 제어하여 프로세스 챔버(110)의 내부 온도를 조절하는 구성이다.The controller 146 is configured to control the supply amount control valve 142 and the discharge amount control valve 144 to control the internal temperature of the process chamber 110.

구체적으로, 프로세스 챔버(110)의 내부 온도 조절은 온도 측정기(145)를 통해 측정된 저온의 공기의 온도값을 기초로 컨트롤러(146)의 제어를 통한 저온의 공기의 공급량 및 배출량 조절을 통해 이루어진다.Specifically, the internal temperature control of the process chamber 110 is performed by controlling the supply amount and discharge amount of low-temperature air through the control of the controller 146 based on the temperature value of the low-temperature air measured through the temperature measuring device 145. .

한편, 본 실시형태에 따른 급속 열처리 설비의 냉각시스템(100)은, 보텍스 튜브(120)로부터 고온의 공기를 공급받아 수용하는 가열가스 공급원과, 가열가스 공급원으로부터 고온의 공기를 이용하여 프로세스 챔버(110) 내부의 가열을 보조하는 보조 가열 유닛을 가지는 것이 바람직하다.On the other hand, the cooling system 100 of the rapid heat treatment facility according to the present embodiment uses a heating gas supply source receiving and receiving high temperature air from the vortex tube 120 and a process chamber ( 110) It is desirable to have an auxiliary heating unit to assist in heating the inside.

이에 의해, 가열가스 공급원으로부터 공급되는 고온의 공기는 급속 열처리 공정(RTP; Rapid Thermal Processing)을 위해 공급되는 열원을 보충하게 된다.Accordingly, the high-temperature air supplied from the heating gas supply source supplements the heat source supplied for rapid thermal processing (RTP).

이때, 고온의 공기에 의한 급속 열처리 공정(RTP; Rapid Thermal Processing) 보조는 프로세스 챔버(110)의 벽체를 가열하는 것으로 이루어진다.In this case, the aid of a rapid thermal processing (RTP) process using high-temperature air consists of heating the wall of the process chamber 110.

이를 위해, 프로세스 챔버(110)를 구성하는 벽체의 내부를 지나도록 형성된 가열가스관로가 구비될 수 있다. To this end, a heating gas pipeline formed to pass through the interior of the wall constituting the process chamber 110 may be provided.

도 4는 도 1에서 압축공기의 압력조절동작을 설명하기 위한 도면이다.4 is a view for explaining the pressure control operation of compressed air in FIG.

본 실시형태에서, 프로세스 챔버(110)의 냉각 공정에서 필요한 냉각성능에 맞추어, 냉각가스의 온도를 조절하는 구성을 가지는 것이 바람직하다.In this embodiment, it is preferable to have a configuration in which the temperature of the cooling gas is adjusted according to the cooling performance required in the cooling process of the process chamber 110.

구체적으로, 보텍스 튜브(120)에 유입되는 압축공기의 압력을 감지하는 압력센서(PS), 프로세스 챔버(110)로 유입되는 냉각가스의 온도를 감지하는 제1 온도센서(TS1)와 프로세스 챔버(110)에서 배출되는 냉각가스의 온도를 감지하는 제2 온도센서(TS2)를 가지며, 이들 데이터를 바탕으로 압축기(101)를 제어하는 컨트롤러(146)를 가질 수 있다.Specifically, a pressure sensor PS that senses the pressure of compressed air flowing into the vortex tube 120, a first temperature sensor TS1 that senses the temperature of the cooling gas flowing into the process chamber 110, and the process chamber ( It has a second temperature sensor (TS2) for sensing the temperature of the cooling gas discharged from 110, it may have a controller 146 that controls the compressor 101 based on these data.

도 4를 참조하면, 컨트롤러(146)는, 고온의 공기의 온도를 감지하고, 감지된 고온의 공기 온도를 기준으로 압축공기의 압력을 조절하도록 구비된다.Referring to FIG. 4, the controller 146 is provided to sense a temperature of high-temperature air and adjust the pressure of compressed air based on the sensed high-temperature air temperature.

이에 의해, 냉각가스의 온도를 조절할 수 있다.즉 냉각용량 가변할 수 있다.Thereby, the temperature of the cooling gas can be adjusted, that is, the cooling capacity can be varied.

도 5는 도 1에서 압축공기의 압력을 일정하게 조절하는 동작을 설명하기 위한 도면이다.FIG. 5 is a view for explaining an operation of constantly adjusting the pressure of compressed air in FIG. 1.

보텍스 튜브(120)는, 공급되는 압축공기의 압력(유량)이 변할 경우, 특정 구간에서만 에너지 분리효율이 높으며, 그 외의 구간에서는 효율이 매우 낮아 냉각수단으로의 사용이 적합하지 못하다. When the pressure (flow rate) of the supplied compressed air changes, the vortex tube 120 has high energy separation efficiency only in a specific section, and its efficiency is very low in other sections, making it unsuitable for use as a cooling means.

즉, 보텍스 튜브(120)는 공급되는 압축공기의 압력, 즉 유량이 일정한 경우에만 높은 에너지 분리효율(배출되는 압축공기의 온도차)을 나타낸다.That is, the vortex tube 120 exhibits a high energy separation efficiency (a temperature difference of the discharged compressed air) only when the pressure of the supplied compressed air, that is, a flow rate is constant.

이를 위해, 보텍스 튜브(120)의 케이싱(121)에 구비되는 압축공기 주입구(121a)에 구비되며, 케이싱(121)으로 주입되는 압축공기의 압력에 따라 압축공기 주입구(121a)의 내경을 조절하여 케이싱(121) 내부로 유입되는 압축공기의 압력을 일정하게 유지시키는 압축조절부를 가지는 것이 바람직하다.To this end, it is provided in the compressed air injection port 121a provided in the casing 121 of the vortex tube 120, and adjusts the inner diameter of the compressed air injection port 121a according to the pressure of the compressed air injected into the casing 121 It is preferable to have a compression control unit that constantly maintains the pressure of compressed air flowing into the casing 121.

Claims (7)

압축공기를 고온의 공기와 저온의 공기로 분리하여 출력하는 보텍스 튜브(Vortex Tube);A Vortex Tube that separates and outputs compressed air into hot air and low temperature air; 상기 보텍스 튜브로부터 저온의 공기를 공급받아 수용하는 냉각가스 공급원; 및A cooling gas supply source receiving and receiving low temperature air from the vortex tube; And 상기 냉각가스 공급원으로부터 상기 저온의 공기를 이용하여 급속 열처리 공정(RTP; Rapid Thermal Processing)이 수행되는 프로세스 챔버 내부를 냉각시키는 냉각 유닛;을 포함하는 급속 열처리 설비의 냉각시스템.A cooling system for a rapid heat treatment facility comprising a; cooling unit cooling the inside of a process chamber in which a rapid thermal processing (RTP) is performed using the low-temperature air from the cooling gas supply source. 청구항 1에 있어서,The method according to claim 1, 상기 보텍스 튜브는, The vortex tube, 상기 압축공기 주입구가 형성되는 케이싱;A casing in which the compressed air injection port is formed; 상기 케이싱의 내부에 마련되어 주입된 상기 압축공기를 1차 보텍스(V1)로 변환시키는 보텍스 제너레이터;A vortex generator provided inside the casing and converting the injected compressed air into a primary vortex (V1); 상기 1차 보텍스(V1)의 진행방향으로 길게 연장되고 선단에 제1 토출구가 형성되는 제1 튜브;A first tube extending long in a traveling direction of the primary vortex V1 and having a first discharge port formed at a tip end thereof; 상기 제1 튜브의 선단 내측에 마련되어 상기 1차 보텍스(V1)를 2차 보텍스(V2)로 변환시키는 회송밸브; 및 A return valve provided inside the tip of the first tube to convert the primary vortex V1 into a secondary vortex V2; And 상기 제1 튜브의 반대방향으로 연장되고 선단에 제2 토출구가 형성되는 제2 튜브;를 가지는 급속 열처리 설비의 냉각시스템.A cooling system of a rapid heat treatment facility having a second tube extending in a direction opposite to the first tube and having a second discharge port formed at a tip end thereof. 청구항 2에 있어서,The method according to claim 2, 상기 냉각 유닛은, The cooling unit, 상기 냉각가스 공급원으로부터 제공되는 저온의 공기를 프로세스 챔버 내부로 공급하는 냉각가스 공급라인;A cooling gas supply line for supplying low-temperature air provided from the cooling gas supply source into the process chamber; 상기 냉각가스 공급라인 상에 설치되어 공급되는 상기 저온의 공기의 공급량을 조절하는 공급량 조절밸브;A supply amount control valve installed on the cooling gas supply line to control a supply amount of the low-temperature air supplied; 냉각에 사용된 상기 저온의 공기를 상기 프로세스 챔버의 외부로 배출하기 위한 냉각가스 배출라인;A cooling gas discharge line for discharging the low temperature air used for cooling to the outside of the process chamber; 상기 냉각가스 배출라인 상에 설치되어 배출되는 상기 저온의 공기의 배출량을 조절하는 배출량 조절밸브;A discharge control valve installed on the cooling gas discharge line to adjust the discharge amount of the low temperature air discharged; 상기 냉각가스 배출라인 상에 설치되어 배출되는 상기 저온의 공기의 온도를 측정하는 온도 측정기; 및A temperature measuring device installed on the cooling gas discharge line to measure the temperature of the low-temperature air discharged; And 상기 공급량 조절밸브 및 상기 배출량 조절밸브를 제어하여 상기 프로세스 챔버의 내부 온도를 조절하는 컨트롤러;를 포함하는 급속 열처리 설비의 냉각 시스템.A cooling system for a rapid heat treatment facility comprising a; a controller for controlling the supply amount control valve and the discharge control valve to control the internal temperature of the process chamber. 청구항 3에 있어서, The method of claim 3, 상기 프로세스 챔버의 내부 온도 조절은 상기 온도 측정기를 통해 측정된 상기 저온의 공기의 온도값을 기초로 상기 컨트롤러의 제어를 통한 상기 저온의 공기의 공급량 및 배출량 조절을 통해 이루어지는 급속 열처리 설비의 냉각 시스템.The cooling system of a rapid heat treatment facility in which the internal temperature of the process chamber is controlled by adjusting the supply amount and discharge amount of the low temperature air through the control of the controller based on the temperature value of the low temperature air measured by the temperature measuring device. 청구항 4에 있어서,The method of claim 4, 상기 보텍스 튜브로부터 상기 고온의 공기를 공급받아 수용하는 가열가스 공급원; 및A heating gas supply source receiving and receiving the high-temperature air from the vortex tube; And 상기 가열가스 공급원으로부터 상기 고온의 공기를 이용하여 상기 프로세스 챔버 내부의 가열을 보조하는 보조 가열 유닛;을 가지는 급속 열처리 설비의 냉각시스템.A cooling system of a rapid heat treatment facility having a; auxiliary heating unit for assisting heating inside the process chamber by using the hot air from the heating gas supply source. 청구항 5에 있어서,The method of claim 5, 상기 컨트롤러는, 상기 고온의 공기의 온도를 감지하고, 감지된 고온의 공기 온도를 기준으로 상기 압축공기의 압력을 조절하는 급속 열처리 설비의 냉각시스템.The controller is a cooling system of a rapid heat treatment facility that senses the temperature of the high-temperature air and adjusts the pressure of the compressed air based on the detected high-temperature air temperature. 청구항 2에 있어서,The method according to claim 2, 상기 압축공기 주입구에 구비되며, It is provided in the compressed air inlet, 상기 케이싱으로 주입되는 압축공기의 압력에 따라 상기 압축공기 주입구의 내경을 조절하여 상기 압축공기의 압력을 일정하게 유지시키는 압축조절부;를 가지는 급속 열처리 설비의 냉각시스템.A cooling system of a rapid heat treatment facility having a; compression control unit for maintaining a constant pressure of the compressed air by adjusting the inner diameter of the compressed air injection port according to the pressure of the compressed air injected into the casing.
PCT/KR2020/011999 2019-09-05 2020-09-05 Rapid thermal processing equipment cooling system Ceased WO2021045587A1 (en)

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