WO2020213228A1 - Vapor deposition source and vapor deposition device - Google Patents

Abstract

[Problem] To provide a vapor deposition source and a vapor deposition device capable of long-term continuous production of a thin film having a uniform film thickness distribution. [Solution] A vapor deposition source is equipped with a housing box, a first nozzle group, and a second nozzle group. The housing box houses a vapor deposition material for forming a film on an object on which a vapor deposition is to be performed. The first nozzle group comprises multiple first nozzles disposed in a center region of the housing box in one direction and each having a first nozzle hole. The second nozzle group comprises multiple second nozzles disposed in side regions located on both outer sides of the center region of the housing box in the one direction and each having a second nozzle hole. The interval between second nozzles respectively positioned on both ends of the housing box in the one direction is longer than the length of the object in the one direction. The open ends of the second nozzles through which a vaporized substance of the vapor deposition material is discharged are configured so that the height of the second nozzles from an imaginary reference plane orthogonal to a hole axis of the second nozzle holes is lower at a part positioned on the outer side in the one direction than at a part positioned on the center region side.

Description

Thin-film deposition source and thin-film deposition equipment

The present invention relates to a vapor deposition source and a vapor deposition apparatus provided with a nozzle for emitting a vapor deposition material to a vapor deposition object.

For example, Patent Document 1 discloses a vapor deposition apparatus including a long-shaped vapor deposition source provided with a plurality of nozzles for ejecting a vapor deposition material from a substrate. The vapor deposition source includes a storage box for accommodating the vapor deposition material and a plurality of nozzles.
In the thin-film deposition apparatus described in Patent Document 1, in order to suppress the mask effect and obtain a thin film having a uniform film thickness distribution, the distance between the nozzles located on the outermost side of each of the bilateral regions in the longitudinal direction of the vapor deposition source. Is narrower than the width of the substrate, the hole axes of the plurality of nozzles located in each of the bilateral regions of the vapor deposition source are arranged so as to be greatly inclined outward, and the plurality of nozzles located in each of the bilateral regions are raised. Arranged in density.

International Publication No. 2018/025637

In such a thin-film deposition apparatus, a thin-film deposition source capable of obtaining a uniform film thickness distribution with respect to the object to be vapor-deposited and capable of continuous production for a long time is desired. For such long-term continuous production, it is necessary that the nozzle is not clogged and the vapor-deposited material is not deteriorated.

In view of the above circumstances, the present invention is to provide a vapor deposition source and a vapor deposition apparatus capable of continuous production of a thin film having a uniform film thickness distribution for a long time.

In order to achieve the above object, the vapor deposition source according to one embodiment of the present invention includes a storage box, a first nozzle group, and a second nozzle group.
The storage box stores the vapor deposition material to be deposited on the vapor deposition object.
The first nozzle group has a plurality of first nozzle holes provided in a central region in one direction of the storage box through which a vaporized substance of the vaporized material emitted toward the vapor deposition object passes. It consists of a first nozzle.
The second nozzle group is provided in a lateral region on each side outside the central region in one direction of the storage box, and vaporizes the vaporized material emitted toward the vapor deposition object. It consists of a plurality of second nozzles having a second nozzle hole through which a substance passes.
The distance between the second nozzles located at both ends of the storage box in one direction is longer than the length of the vapor deposition object in one direction.
At the opening end of the second nozzle from which the vaporized substance of the vaporized material is emitted, the height from the virtual reference plane orthogonal to the hole axis of the second nozzle hole is higher than the portion located on the central region side. Is also lower in the portion located on the outer side in the above one direction.

According to such a configuration of the present invention, by using the second nozzle, it is possible to control the ejection angle of the vapor-deposited material emitted from the second nozzle, and it is possible to form a film with a uniform film thickness distribution. Become.

The end face of the portion located on the outer side in the one direction passes through the portion located on the central region side in the inner edge portion of the opening end of the second nozzle and the portion located on the outer side in the one direction. The vapor deposition target side from the virtual inclined surface including the virtual line, which is inclined with respect to the virtual reference surface at an angle formed by the virtual line along the one direction and the virtual reference surface when projected onto the virtual reference surface. It may be located in.

The line obtained by projecting the hole axis of the second nozzle hole onto the plane defined by the depth direction of the storage box and the one direction is the vapor deposition surface of the vapor deposition object or an extension surface of the vapor deposition surface. The positions may be orthogonal to each other or tilted toward the central region.

The shape of the opening end of the second nozzle may have a longitudinal direction in a direction orthogonal to the one direction.

The second nozzle may be composed of a plurality of sub-nozzles arranged along a direction orthogonal to the one direction.

The first nozzle may emit the vaporized substance and have the same open end along the peripheral edge in height from the virtual reference plane.

In order to achieve the above object, the vapor deposition apparatus according to one embodiment of the present invention includes a vapor deposition source and a mask material.
A storage box for accommodating the vapor-deposited material to be deposited on the vapor-deposited object and a vaporized substance of the vapor-deposited material emitted toward the vapor-deposited object, which is provided in the central region in one direction of the storage box, pass through. A first nozzle group composed of a plurality of first nozzles having a first nozzle hole, and a lateral region on each side of the storage box on each side outside the central region in one direction. A thin-film deposition source including a second nozzle group consisting of a plurality of second nozzles having a second nozzle hole through which a vaporized substance of the vapor-deposited material emitted toward a vapor-deposited object passes. An opening in which the distance between the second nozzles located at both ends of the box in one direction is longer than the length of the vapor deposition object in one direction, and the vaporized substance of the vapor deposition material of the second nozzle is emitted. At the end, the height from the virtual reference plane orthogonal to the hole axis of the second nozzle hole is lower in the portion located on the outer side in the one direction than in the portion located on the central region side.
The mask material is arranged between the upper vapor deposition target and the vapor deposition source, and has a plurality of openings that limit the adhesion range of the vaporized substance to the vapor deposition target.

The inner surface of the opening of the mask material has a tapered surface that tapers in the thickness direction from the vapor deposition source.
At the opening end of the second nozzle, the inclination angle formed by the angle between the second opening end and the virtual reference surface is θ, and the angle of the tapered surface with respect to the plate surface of the mask material is θm. sometimes,

　であってもよい。

It may be.

Let Lw be the length of the vapor deposition object in one direction, L1 be the length in one direction in which the first nozzle can be arranged in the storage box, and the vapor deposition object and the second nozzle. When the distance is H,
The first nozzle may be arranged in a region having a length of L1 / 2 obtained by the following equation in one direction from the center of the storage box in one direction.

When the distance between the second nozzles located at both ends of the storage box in one direction is L, and the length of the inner dimensions of the storage box in one direction is L2.

　であってもよい。

It may be.

Further, a moving means for moving the vapor deposition object relative to the vapor deposition source in the one direction may be provided.

The three vapor deposition sources arranged along the one direction are provided.
The hole axis of the first nozzle provided in the vapor deposition source located at the center of the three vapor deposition sources is located orthogonal to the vapor deposition surface of the vapor deposition object, and the hole axis of the second nozzle is the vapor deposition surface or the vapor deposition surface. Positioned orthogonal to the extension surface of the vapor deposition surface or tilted toward the central region side.
Of the three vapor deposition sources, the hole axes of the first nozzles provided in the vapor deposition sources located on both sides of the central vapor deposition source are located at an angle toward the central vapor deposition source, and the hole axes of the second nozzles. May be tilted toward the central region and tilted toward the central deposition source side.

As described above, according to the present invention, it is possible to form a film with a uniform film thickness distribution.

It is a partial perspective view explaining the vapor deposition apparatus which concerns on embodiment of this invention. It is a partial cross-sectional view of the vapor deposition apparatus which saw the said vapor deposition apparatus from the front side. It is a schematic top view of the vapor deposition source provided in the said vapor deposition apparatus. It is a perspective view of the 1st nozzle provided in the said vapor deposition source. It is a perspective view of the 2nd nozzle provided in the said vapor deposition source. It is sectional drawing of the 2nd nozzle. A schematic cross-sectional view for explaining the relationship between the inclination angle of the second nozzle and the taper angle of the inner surface of the opening of the mask plate in the vapor deposition source, and a partially enlarged cross section of the mask plate and the substrate for explaining the occurrence of the mask effect. It is a figure. It is a schematic view which looked at the vapor deposition apparatus from the front side for explaining the region where the 1st nozzle and the 2nd nozzle are arranged in the said vapor deposition source. It is a figure explaining the film thickness distribution of the film formed by each of the 1st nozzle and the 2nd nozzle. It is a figure for demonstrating the film thickness distribution of the film formed by each nozzle shown in FIG. It is a figure for demonstrating the shape of the 2nd nozzle. It is a figure for demonstrating the arrangement of the 2nd nozzle. It is a figure for demonstrating the relationship between the inclination angle θ of the 2nd nozzle, a mask effect and material use efficiency. It is a schematic top view of the vapor deposition source provided with the second nozzle of the modification. It is a perspective view of the 2nd nozzle provided in the vapor deposition source shown in FIG. It is a perspective view and the cross-sectional view which shows the other modification of the 2nd nozzle. It is a perspective view and the cross-sectional view which shows the further modification example of the 2nd nozzle. It is sectional drawing which shows the further modification example of the 2nd nozzle. It is sectional drawing which shows the further modification example of the 2nd nozzle. It is a schematic top view and sectional view of the vapor deposition source which shows the modification of the vapor deposition source. It is a partial cross-sectional view of the vapor deposition source as a conventional example.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the description of the modification described later, the same reference numerals may be given to the same configurations, and the description thereof may be omitted for the configurations already described above.

FIG. 1 is a schematic cross-sectional view of a vapor deposition apparatus 100 according to an embodiment of the present invention.
FIG. 2 is a partial cross-sectional view of the vapor deposition apparatus 100 as viewed from the front side.
The thin film deposition apparatus 100 is, for example, a vacuum vapor deposition apparatus that deposits a thin film on one surface (deposited surface) of a rectangular flat substrate S.

As shown in FIGS. 1 and 2, the vapor deposition apparatus 100 includes a vacuum chamber 1, a substrate transfer apparatus 2, and a vapor deposition source 3.
A vacuum pump is connected to the vacuum chamber 1 via an exhaust pipe (not shown) so that the inside of the vacuum chamber 1 can be evacuated to a predetermined pressure (vacuum degree) and held.

The substrate transfer device 2 is provided in the upper part of the vacuum chamber 1. The substrate transfer device 2 has a carrier 21 that holds the substrate S in a state where the lower surface as a vapor deposition surface is open, and the carrier 21 and thus the substrate S are moved in one direction in the vacuum chamber 1 at a predetermined speed by a drive device (not shown). It is designed to move. Hereinafter, the relative movement direction of the substrate S with respect to the vapor deposition source 3 is the X-axis direction, the width direction of the substrate S orthogonal to the X-axis direction is the Y-axis direction as one direction, and the substrate S orthogonal to the X-axis direction and the Y-axis direction. The film thickness direction of is the Z-axis direction.

The vapor deposition source 3 is provided on the bottom surface side of the vacuum chamber 1 so as to face the substrate S that is moved in the X-axis direction. The vapor deposition source 3 is a long line type extending in one direction (Y-axis direction). Film formation is performed while moving the vapor deposition source 3 along a direction (X-axis direction) substantially perpendicular to the longitudinal direction of the vapor deposition source 3 with respect to the substrate S which is the object to be vapor-deposited. In this embodiment, the vapor deposition source 3 is moved, but the substrate S may be moved or both may be moved.

Further, a plate-shaped mask plate (mask material) 4 is provided between the substrate S transported by the substrate transport device 2 and the vapor deposition source 3. In the present embodiment, the mask plate 4 is attached integrally with the substrate S and is conveyed together with the substrate S by the substrate transfer device 2. The mask plate 4 may be fixedly arranged in the vacuum chamber 1 in advance.

The mask plate 4 is provided with an opening 41 that penetrates in the plate thickness direction (Z-axis direction) and corresponds to a thin film pattern to be formed. The opening 41 limits the adhesion range of the vapor deposition material Vm from the vapor deposition source 3 to the substrate S, and a thin film can be formed on the substrate S in a predetermined pattern.

The shape of the opening 41 will be described with reference to the partial cross-sectional view of the mask plate 4 shown in FIG. 7 (A).
As shown in FIG. 7A, the inner surface of the opening 41 of the mask plate 4 has a first tapered surface 411 that tapers from the vapor deposition source 3 side in the plate thickness direction (Z-axis direction) and a second taper that spreads toward the end. The surface 412 has a continuous shape. The angle θm (hereinafter, referred to as a taper angle θm) of the first tapered surface 411 with respect to the plate surface 413 on the vapor deposition source 3 side of the mask plate 4 at the opening 41 is in the range of, for example, 40 ° to 50 °. In the present embodiment, the taper angle θm of the mask plate 4 is 50 °.

As the mask plate 4, a resin such as polyimide is used in addition to aluminum, alumina, stainless steel, and Invar alloy. The shape and number of the openings 41 are appropriately selected according to the pattern to be formed on the substrate S.

FIG. 3 is a schematic top view of the vapor deposition source 3.
As shown in FIGS. 1 to 3, the vapor deposition source 3 includes a storage box 31, a first nozzle group 10 including a plurality of first nozzles 7, and a second nozzle composed of a plurality of second nozzles 8. It has a group 20 and.

The storage box 31 stores the vapor deposition material Vm, which is a vapor deposition material appropriately selected according to the thin film to be formed on the substrate S. A first nozzle group 10 and a second nozzle group 20 are provided on the upper surface 31a located on the substrate S side of the storage box 31.

The first nozzle group 10 is located in the central region 61 of the upper surface 31a of the storage box 31 in the Y-axis direction. The first nozzle group 10 is composed of a plurality of first nozzles 7 arranged on the upper surface 31a along the Y-axis direction, for example, at equal intervals. In addition, in FIG. 2 and FIG. 3, reference numerals 7a and 7b are attached to some of the first nozzles for the sake of convenience for use in the description described later, but when it is not necessary to distinguish them, the description is made. It will be referred to as a first nozzle 7.

The second nozzle group 20 is located in a lateral region 62 located on the outer side along the Y-axis direction from the central region 61 of the upper surface 31a of the storage box 31. The second nozzle group 20 is composed of a plurality of second nozzles 8 arranged on the upper surface 31a along the Y-axis direction. In addition, in FIG. 2 and FIG. 3, reference numerals 8a to 8g are attached to some of the second nozzles for the sake of convenience for use in the description described later, but when it is not necessary to particularly distinguish and explain, the reference numerals are given. It will be referred to as a second nozzle 8.

The two lateral regions 62 are arranged to face each other along the Y-axis direction with the central region 61 in between, and the second nozzle group 20 is arranged to face each other via the first nozzle group 10. The plurality of first nozzles 7 and the plurality of second nozzles 8 are arranged in a row along the Y-axis direction. The number of nozzles is not limited to the number shown in the figure.

As shown in FIG. 2, the distance L between the second nozzle 8a and the second nozzle 8g located at the outermost ends of the upper surface 31a along the Y-axis direction is the width of the substrate S in the Y-axis direction. It is longer than Lw.
As shown in FIG. 2, the upper surface 31a of the storage box 31 and the substrate S are located in parallel, and when the substrate S is projected onto the storage box 31, the first nozzle group 10 is within the projection area of the substrate S. , A part of the second nozzle group 20 is located. Of the second nozzle group 20, the two outermost second nozzles 8a and 8b and the second nozzles 8f and 8g are located outside the projection region of the substrate S.

In the present embodiment, each second nozzle group 20 has five second nozzles 8.
As shown in FIG. 3, in the second nozzle group 20, of the five second nozzles 8, the four second nozzles 8 located on the central region 61 side are arranged at equal intervals at the intervals of a. .. The two second nozzles (8a and 8b, 8f and 8g) located on the outer side of each of the bilateral regions 62 in the Y-axis direction are arranged at intervals of b that are narrower than the intervals of a. As described above, in the present embodiment, in the second nozzle group 20, the second nozzle 8 located on the outer side is arranged more densely than the second nozzle 8 located on the central region side.

The storage box 31 is provided with a heating means (not shown) for heating the vapor deposition material Vm. The vaporized substance of the vaporized material heated by the heating means is emitted from each of the first nozzles 7 and each of the second nozzles 8.

FIG. 4 is a perspective view of the first nozzle 7.
FIG. 5 is a perspective view of the second nozzle 8.
FIG. 6 is a schematic cross-sectional view of the second nozzle 8.

As shown in FIG. 4, the first nozzle 7 has a first nozzle hole 72 which is a passage hole through which the vaporized material sublimated or vaporized in the storage box 31 passes. The first nozzle 7 has an open end 71 from which the vapor-deposited material is emitted toward the substrate S. The open end 71 of the first nozzle 7 has a surface parallel to the upper surface 31a, and has a rectangular shape when the vapor deposition source 3 is viewed from above, as shown in FIG.
The first nozzle 7 has a tubular shape having a hollow portion that serves as the first nozzle hole 72, and has a rectangular parallelepiped outer shape. The first hole shaft 73 of the first nozzle hole 72 is provided perpendicular to the upper surface 31a. The height of the open end 71 of the first nozzle 7 from the upper surface 31a is the same along the peripheral edge.

As shown in FIGS. 5 and 6, the second nozzle 8 has a second nozzle hole 82, which is a passage hole through which the vaporized material sublimated or vaporized in the storage box 31 passes. The second nozzle 8 has an open end 81 from which the vapor-deposited material is emitted toward the substrate S.

The second nozzle 8 has a tubular shape having a hollow portion that serves as a second nozzle hole 82.
As shown in FIG. 6, the second nozzle 8 forming the second nozzle hole 82 has an inner side surface 821.
The inner side surface 821 has a shape in which the opening shape of the second nozzle hole 82 does not change along the height direction (Z-axis direction) of the storage box 31.
The second hole shaft 83, which is the hole shaft of the second nozzle hole 82, is perpendicular to the upper surface 31a.

As shown in FIG. 6, in the cross-sectional view along the Y-axis direction, the second nozzle 8 and the second nozzle hole 82 have a shape that is asymmetrical with respect to the second hole shaft 83.
On the other hand, the first nozzle 7 and the first nozzle hole 72 have a symmetrical shape with respect to the first hole shaft 73 of the first nozzle 7 in the cross-sectional view along the Y-axis direction.

As shown in FIG. 3, when the vapor deposition source 3 is viewed from above, the opening end 81 of the second nozzle 8 has a rectangular frame shape having a longitudinal direction in the X-axis direction orthogonal to the Y-axis direction.
As shown in FIG. 6, the opening end 81 of the second nozzle 8 is different in height from the virtual reference surface 9 perpendicular to the second hole axis 83 along the peripheral edge. More specifically, when the second nozzle 8 is arranged in the storage box 31 to serve as the vapor deposition source 3, the opening end 81 of the second nozzle 8 is located on the central region 61 side of the second opening end 81. The height h1 of the located portion 81a from the virtual reference surface 9 is higher than the height h2 of the portion 81b located on the outer side of the opening end 81 of the second nozzle 8 in the Y-axis direction from the virtual reference surface 9. It's getting higher.
As described above, the opening end 81 of the second nozzle 8 is inclined with respect to the virtual reference surface 9.

The virtual reference surface 9 is a surface orthogonal to the second hole axis 83, and is the lowest height portion of the upper surface 31a and the opening end 81 of the second nozzle 8 (reference numerals in the present embodiment). It shall be located between the part to which 81b is attached).
A flat surface having the inner edge of the opening end 81 of the second nozzle 8 as the peripheral edge is defined as the opening surface of the second nozzle 8. The angle formed by the opening surface and the virtual reference surface 9 is defined as the inclination angle θ of the second nozzle 8. In other words, the angle formed by the opening end 81 of the second nozzle 8 and the virtual reference surface 9 is the inclination angle θ, and the lowest height and the highest height at the inner edge of the opening end 81 of the second nozzle 8. The angle formed by the virtual line passing through the high portion and the virtual reference surface 9 is the inclination angle θ. It is assumed that the virtual line is along the Y-axis direction when projected onto the upper surface 31a.
In the present embodiment, the virtual reference surface 9 and the upper surface 31a are located in parallel.

In the opening end 81 of the second nozzle 8 provided in the vapor deposition source 3, the portion 81a located on the central region 61 side of the opening end 81 of the second nozzle 8 is outside the opening end 81 of the second nozzle 8. It is higher than the portion 81b located on the side. As a result, the emission angle of the vapor-deposited material emitted from the second nozzle 8 is controlled, and the in-plane film thickness distribution of the thin film emitted from one second nozzle 8 and adhering to the substrate S is on the Y-axis. The left and right sides can be non-uniform about the second hole shaft 83 in the direction. Details will be described later with reference to FIG.

A second nozzle 8 having an opening end 81 of the second nozzle 8 having such an inclination angle is provided, and the distance between the second nozzle 8a and the second nozzle 8g located at both ends of the upper surface 31a is further provided. By configuring the vapor deposition source 3 so that L is longer than the width Lw of the substrate S in the Y-axis direction, a thin film having a uniform film thickness distribution in the plane can be formed.
Further, in the present embodiment, the line projected on the ZY plane in which the second hole shaft 83 of the second nozzle 8 is defined by the depth direction (Z-axis direction) and the Y-axis direction of the storage box is the substrate S. Orthogonal to the vapor deposition surface or the extension surface of the vapor deposition surface. As a result, the accumulation of unused vapor-deposited material on the outer side around the second nozzle 8 is suppressed, and continuous production for a longer period of time is possible, as compared with the case where the hole shaft is provided so as to be tilted outward. It becomes.
The second nozzle 8 may be provided so that the line projected on the ZY plane of the second hole shaft 83 of the second nozzle 8 is inclined toward the central region 61. As a result, as in the case where the substrate S is provided so as to be orthogonal to the vapor deposition surface or the extension surface of the vapor deposition surface, the hole axis is provided around the second nozzle 8 rather than being provided so as to be inclined outward. Accumulation of unused vapor deposition material on the outer side is suppressed, and continuous production for a longer period of time becomes possible.

In FIG. 9, the substrate S and the vapor deposition source 3 are arranged to face each other as shown in FIG. 8, and the first nozzles 7a and 7b and the second nozzles 8a to 8e provided in the vapor deposition source 3 shown in FIG. 3 are used. The simulation result of the relative film thickness with respect to the distance from the center of the substrate S of each nozzle when a thin film is formed on the substrate S is shown.

As shown in FIG. 9, the relative film thickness of the thin film formed by using the first nozzles 7a and 7b shows a substantially symmetrical shape with the peak portion as a boundary. On the other hand, the relative film thickness of the thin film formed by using the second nozzles 8a to 8e shows a left-right asymmetric shape with the peak portion as a boundary. In the thin film formed by each of the second nozzles 8, the right side of the peak portion, that is, the side farther from the center of the substrate S is on the left side of the peak portion, that is, the distance from the center of the substrate S is. The film thickness is thicker than that of the closer side. Each peak portion corresponds to the position of the corresponding nozzle hole axis.

That is, by using the second nozzle 8 having the opening end 81 of the second nozzle 8 having the inclination angle θ, the emission angle of the vapor-deposited material to be emitted is controlled, and the film is formed by one second nozzle 8. The film thickness distribution of the thin film can be made non-uniform. More specifically, by using the second nozzle 8, the film thickness of the thin film located on the portion 81a side where the height of the opening end 81 of the second nozzle 8 is the highest is lower on the portion 81b side. A thin film having a film thickness distribution asymmetrical with respect to the second pore axis 83 can be formed so as to be thinner than the second pore axis 83.

FIG. 9 shows the film thickness distribution of the thin film formed by each nozzle, and FIG. 10 shows all the nozzles (first nozzle group and two second nozzles) provided in the vapor deposition source 3 including each of these nozzles. The simulation result of the relative film thickness of the thin film with respect to the distance from the center of the substrate S when the thin film is formed by using the nozzle group) is shown.
As shown in FIG. 10, by using the second nozzle 8, a thin film can be sufficiently formed on both ends of the substrate S in the Y-axis direction, and the thin film has a uniform film thickness distribution in the plane. Can be formed. Further, the mask effect can be suppressed.

In this way, in the second nozzle provided in the region on both sides of the vapor deposition source, the portion of the opening end located on the central region side is higher than the portion located on the outer side. It is possible to control the emission angle of the vapor-deposited material emitted from the nozzle of 2. As a result, the mask effect can be suppressed while forming a thin film having a uniform film thickness distribution in the plane.

FIG. 7B is a partially enlarged cross-sectional view of the mask plate 4 and the substrate S. As shown in FIG. 7B, when it is attempted to form a thin film having the same film thickness in both the region A and the region B of the substrate S via the mask plate 4, the incident angle of the vapor-deposited material on the mask plate 4 is different. As the size increases, the mask plate 4 blocks the incident of the vapor-deposited material on the substrate S in the area A as compared with the area B, so that the film thickness of the thin film to be formed becomes thinner, which is a so-called mask effect. Occurs.
On the other hand, in the present embodiment, the occurrence of the mask effect can be suppressed by controlling the emission angle of the vapor-deposited material emitted from the second nozzle.

Further, the distance between the second nozzles on both sides located on the outermost side of the plurality of nozzles provided in the vapor deposition source along the Y-axis direction is made longer than the width of the substrate S in the Y-axis direction. A sufficient film can be formed at both ends in the Y-axis direction, and the film can be formed with a uniform in-plane film thickness distribution.

Further, the opening end 81 of the second nozzle 8 of the second nozzle 8 has a shape in which the length along the X-axis direction orthogonal to the Y-axis direction is longer than the length along the Y-axis direction. ing. As described above, the opening of the second nozzle 8 has a shape having a longitudinal direction in the X-axis direction.
By forming the opening of the second nozzle 8 in the longitudinal direction in the X-axis direction in this way, it is possible to suppress the occurrence of nozzle clogging. Hereinafter, it will be described with reference to FIG.

FIG. 11A shows a perspective view, a cross-sectional view, and a top view of the nozzle as a comparative example. FIG. 11B shows a perspective view, a cross-sectional view, and a top view of the second nozzle 8 of the present embodiment. In each case, the cross-sectional view corresponds to a cross-sectional view taken along the Y-axis direction, which is the longitudinal direction of the vapor deposition source 3.

The nozzle 90 shown in FIG. 11A and the second nozzle 8 shown in FIG. 11B have the same opening area. Here, the opening area indicates the area of the region of the second nozzle hole 82 on the plane (opening surface) passing through the inner edge of the opening end on the side where the vapor deposition material is emitted.

In FIGS. 11A and 11B, reference numeral 12 indicates a reflector, and reference numeral 13 indicates a protective plate. The reflector 12 is composed of a plurality of plate-shaped members and blocks the heat released from the storage box 31. The protective plate 13 is arranged so as not to block the open end of the nozzle. By providing the adhesive plate 13, adhesion of the vapor-deposited material to the periphery of the nozzle is prevented. In addition, in FIGS. 1 to 3, the reflector and the protective plate are not shown.

In the nozzle 90 shown in FIG. 11A, the opening end 91 is an inclined surface, and the height from the virtual reference surface is different at the peripheral edge. The opening of the nozzle 90 cut in a plane perpendicular to the hole axis 93 of the nozzle 90 has a perfect circular shape, and the opening surface has an elliptical shape.
On the other hand, also in the second nozzle 8 shown in FIG. 11B, the opening end 81 of the second nozzle 8 has an inclined surface, and the height from the virtual reference surface is different at the peripheral edge. The opening surface of the second nozzle 8 has a rectangular shape.

Since the opening of the second nozzle 8 has a longitudinal direction, the length of the opening surface in the Y-axis direction is shortened as compared with the nozzle 90 having the same opening area and an elliptical opening surface. be able to.
As a result, the distance between the adjacent second nozzles 8 can be made wider than when the nozzle 90 is used.

FIG. 12 is a diagram for explaining the arrangement of the second nozzle 8.
When a plurality of second nozzles 8 having inclined opening ends are used, if the distance between adjacent second nozzles 8 is short, as shown in FIG. 12, of the opening ends 81 of one of the second nozzles 8. There is a problem that the vapor-deposited material emitted from the lowest height portion 81b side rebounds at the other second nozzle 8 and does not adhere to the desired region of the substrate S. Therefore, in order to suppress the occurrence of such rebound, it is desirable that the adjacent second nozzles 8 are arranged at a certain distance from each other.
Therefore, by using the second nozzle 8 having an opening having an opening in the longitudinal direction in the X-axis direction of the present embodiment, the vapor-deposited material in the second nozzle 8 as described above is secured while ensuring the emission amount of the vapor-deposited material. It is possible to separate the distance between the second nozzles 8 so that the influence of the bounce is suppressed. As a result, the vapor deposition material can be adhered to a desired region of the substrate S, and the film thickness distribution of the thin film can be made uniform.

Further, in the second nozzle 8, the length of the opening surface in the Y-axis direction can be shortened, so that the occurrence of nozzle clogging can be suppressed.
As shown in FIG. 11, since the opening shape of the second nozzle 8 has a longitudinal direction, the height of the second nozzle 8 can be made lower than that of the nozzle 90 having the same opening area. Therefore, the second nozzle 8 can shorten the length of the nozzle portion protruding from the adhesion plate 13 as compared with the nozzle 90, and can suppress the occurrence of nozzle clogging.

That is, the longer the length of the nozzle portion protruding from the adhesive plate 13, the easier it is for the vapor-deposited material to cool, and the more easily the nozzle clogging of the vapor-deposited material occurs. In the present embodiment, since the opening of the second nozzle 8 has a longitudinal direction, the length of the nozzle portion protruding from the protective plate 13 can be shortened without changing the opening area. Therefore, it is possible to prevent the vapor-deposited material from cooling and suppress the occurrence of nozzle clogging while ensuring the amount of the vapor-deposited material emitted. This enables continuous production for a long time.

Here, FIG. 21 is a partial cross-sectional view of the Y-axis direction side portion of the vapor deposition source 503 as a conventional example. In the vapor deposition source 503 shown in FIG. 21, the entire storage box 531 has a convex shape in a cross section along the Y-axis direction. The storage box 531 has an upper surface 531a parallel to the substrate S at the center in the Y-axis direction and a slope 531b oblique to the upper surface 531a on both sides in the Y-axis direction. A first nozzle 507 is arranged on the upper surface 531a, and a second nozzle 508 having a larger opening diameter than the first nozzle 507 is arranged on the slope 531b. In the vapor deposition apparatus using the vapor deposition source 503, the length of the vapor deposition source 503 in the Y-axis direction is shorter than the length of the substrate S in the Y-axis direction, and the deposition source 503 is arranged in each of the regions on both sides in the Y-axis direction. The hole axis of the nozzle 508 of No. 2 is inclined outward.

In the vapor deposition source 503 as shown in FIG. 21, the amount of unused vapor deposition material that did not adhere to the substrate increases in the vicinity of the second nozzle 508 located in both side regions. Since maintenance is required so that the nozzle opening is not blocked by the deposits of the unused vapor deposition material, the frequency of maintenance increases as the amount of the vapor deposition material deposited increases. As the frequency of maintenance increases, the continuous production period becomes shorter, and the production efficiency decreases.
For example, in order to prolong the continuous production period, it is conceivable to lengthen the nozzle protruding from the protective plate so that the nozzle opening is not blocked by the deposit of unused vapor deposition material. Since it is easy to cool, the vapor deposition material adheres to the nozzle and the nozzle is easily clogged. When the temperature of the nozzle is raised in order to suppress the occurrence of such nozzle clogging, the surface temperature of the vapor-deposited material contained in the storage box rises, which causes a problem of deterioration of the vapor-deposited material.

On the other hand, in the present embodiment, the second hole shaft 83 of the second nozzle 8 is provided so as to be orthogonal to the vapor deposition surface of the substrate S or the extension surface of the vapor deposition surface, so that the hole shaft is outward. It is possible to reduce the amount of unused vapor deposition material deposited as compared with the case where the material is arranged so as to be inclined to. Therefore, the utilization efficiency of the thin-film deposition material can be improved, and the production efficiency can be improved. Further, since the maintenance frequency can be reduced, continuous production for a long time becomes possible.
Further, as described above, by forming the opening of the second nozzle 8 into a shape having a longitudinal direction, the length of the nozzle protruding from the protective plate can be shortened, so that the occurrence of nozzle clogging is suppressed. be able to. Therefore, it is not necessary to raise the temperature of the nozzle in order to suppress the occurrence of nozzle clogging, and it is possible to suppress the occurrence of problems such as the surface temperature of the vapor-deposited material contained in the storage box rising, which causes deterioration of the vapor-deposited material. Can be done.

In FIG. 6, the portion 81a located on the central region side of the inner edge of the opening end 81 of the second nozzle 8 and the portion 81b located on the outer side in the Y direction are passed through and projected onto the virtual reference plane 9 in the Y direction. Draw a virtual line 85 along. The end surface of the portion 81b located on the outer side of the opening end 81 is inclined with respect to the virtual reference surface 9 at an angle θ formed by the virtual line 85 and the virtual reference surface 9, and is larger than the virtual inclined surface including the virtual line 85. It is located on the substrate S side. In the example shown in FIG. 6, all the end faces of the portion 81b located on the outer side are located on the substrate S side of the virtual inclined surface, and the end faces of the portion 81b located on the outer side are parallel to the virtual reference surface 9. To position.

Here, in the second nozzle, as in the second nozzle 38 of the modified example shown in FIG. 17, which will be described later, the end surface of the portion 381b located on the outer side of the opening end 381 is oblique to the virtual reference surface 9. It may be a slope located at. In the second nozzle 38 shown in FIG. 17, the end surface of the portion 381b located on the outer side is located on the virtual inclined surface. This virtual inclined surface passes through a portion 381a located on the central region side at the inner edge of the opening end 381 and a portion 381b located on the outer side in the Y direction, and is a virtual line along the Y direction when projected onto the virtual reference plane 9. A surface including a virtual line 385 that is inclined with respect to the virtual reference surface 9 at an angle θ formed by the 385 and the virtual reference surface 9.
In the second nozzle 8 of the present embodiment, since the portion 81b located on the outer side of the opening end 81 is located on the substrate S side with respect to the virtual inclined surface, the second nozzle 8 of the modified example shown in FIG. Compared with the nozzle 38, the vapor-deposited material scattered on the protective plate arranged around the nozzle can be blocked more by the portion 81b located on the outer side.

As described above, it is preferable that the end surface of the portion 81b located on the outer side is located on the substrate S side rather than the virtual inclined surface, and the deposition rate of the vapor-deposited material on the adhesion plate 13 can be slowed down, and the length is longer. Continuous production of time becomes possible.
In the present embodiment, the portion 81b located on the outer side has an example in which all of its end faces are located on the substrate S side of the virtual inclined surface, but at least a part of the end face is a virtual inclined surface. It suffices if it is located on the substrate S side.

FIG. 7A is a diagram for explaining the relationship between the inclination angle θ of the second nozzle 8 and the taper angle θm of the first tapered surface 411 of the opening 41 of the mask plate 4.
As shown in FIG. 7A, the opening 41 of the mask plate 4 has a first tapered surface 411 that diverges toward the vapor deposition source 3.

FIG. 7B is a partially enlarged cross-sectional view of the mask plate 4 and the substrate S. An example is taken when an attempt is made to form a thin film having the same film thickness in both the region A and the region B of the substrate S via the mask plate 4. As shown in FIG. 7B, when the incident angle of the vapor-deposited material on the mask plate 4 becomes large, the vapor-deposited material reaches the region B of the substrate S, whereas in the region A, the vapor-deposited material reaches the substrate S. Since the incident of the thin film is blocked by the mask plate 4, a so-called mask effect occurs in which the film thickness of the thin film formed is thinner than that of the region B.

FIG. 13 is a schematic view for explaining the relationship between the inclination angle θ of the second nozzle 8 and the mask effect and the efficiency of using the vapor-deposited material.
As shown in FIG. 13, if the value of θ is increased to suppress the occurrence of the mask effect and the emission angle of the vapor-deposited material from the nozzle is adjusted, the efficiency of using the vapor-deposited material decreases, and the efficiency of using the vapor-deposited material is improved. The mask effect decreases as the value of θ decreases. As described above, the relationship between the mask effect and the efficiency of using the vapor-deposited material is in a trade-off relationship.

The inclination angle θ of the second nozzle 8 is preferably set within the range of the following equation using the taper angle θm of the mask plate 4.

As shown in the above equation, the inclination angle θ of the second nozzle 8 may be larger than a value 15 ° smaller than the taper angle θm of the mask plate 4, and may be larger than a value 10 ° smaller than the taper angle θm. More preferred.
For example, in the present embodiment, when the taper angle θm of the mask plate 4 is 50 °, the inclination angle θ of the second nozzle 8 is preferably set in the range of 35 ° to 55 °, and more preferably 40. ° to 50 °. The upper limit of the preferable setting range of the inclination angle θ is appropriately set depending on the type of the vapor deposition material, the taper angle θm of the mask plate 4, the width Lw of the substrate S, and the like. In the present embodiment, the inclination angle θ of the second nozzle 8 is set to 40 °.

As described above, in the present embodiment, the height of the second nozzle 8 having the opening end 81 of the second nozzle 8 inclined with respect to the virtual reference surface 9 is higher on the central region 61 side than on the outer side. The distance L between the second nozzle 8a and the second nozzle 8g located at both ends of the storage box 31 in the Y-axis direction is deposited so as to be longer than the width Lw of the substrate S in the Y-axis direction. By configuring the source 3 and further setting the inclination angle θ of the second nozzle 8 as described above, in addition to being able to form a film with a uniform film thickness distribution, the occurrence of a mask effect is suppressed. At the same time, the efficiency of using the vapor-deposited material can be improved.

Further, in the vapor deposition source 3, the first nozzle 7 is arranged as follows.
That is, as shown in FIG. 8, the center of the storage box 31 in the Y-axis direction is positioned on the center line C along the substrate thickness direction (Z-axis direction) passing through the center of the substrate S in the Y-axis direction, and the substrate S is located. The length in the Y-axis direction of the substrate S is Lw, and the length in the Y-axis direction in which a plurality of first nozzles 7 can be arranged on the upper surface 31a of the storage box 31 is L1, the vapor deposition surface of the substrate S and the second nozzle. When the distance from 8 is H, the first nozzle 7 is arranged in a region having a length of L1 / 2 obtained by the following equation in the Y-axis direction from the center line C.

As an example, when the length Lw of the substrate S in the Y-axis direction is 900 mm, the distance H between the vapor deposition surface of the substrate S and the second nozzle 8 is 500 mm, and θ is 40 °, the value of L1 is 528 mm. Become. In this case, the first nozzle 7 is provided on the upper surface 31a of the storage box 31 within a region of 264 mm in the Y-axis direction from the center line C.
On the other hand, the plurality of second nozzles 8 are provided in a region outside the region of 264 mm in the Y-axis direction from the center line C on the upper surface 31a of the storage box 31.

Further, as shown in FIG. 8, the distance between the second nozzles 8 located at both ends of the storage box 31 in the Y-axis direction is L, and the length of the inner dimension of the storage box 31 in the Y-axis direction is L2. Sometimes, it is preferable that the value of L / L2 satisfies the following equation. As a result, the surface temperature of the vapor-deposited material in the storage box 31 can be easily made uniform, and deterioration of the material during long-term continuous production can be suppressed.

Here, it will be described with reference to FIG. The length of the vapor deposition source 503 as a conventional example shown in FIG. 21 in the Y-axis direction is shorter than the length of the substrate S. When such a thin-film deposition source 503 is used, it is the same as the case of using the thin-film deposition source 3 in which the distance L between the second nozzles 8 located at both ends in the Y-axis direction is longer than the length of the substrate S as in the present embodiment. In order to store an amount of thin-film deposited material in the storage box 531, the depth of the storage portion of the storage box 531 is increased, or the length L2'of the inner dimension of the storage box 531 in the Y-axis direction is set at both ends in the Y-axis direction. It is necessary to make it sufficiently longer than the distance L'between the second nozzles 508 located at each.
When the depth of the accommodating portion of the accommodating box 531 is increased, the entire vapor deposition apparatus becomes large.
When the length L2'of the inner dimension of the storage box 531 in the Y-axis direction is sufficiently longer than the distance L'between the second nozzles 508 located at both ends in the Y-axis direction, the nozzles on both sides of the storage box 531 It is difficult to make the temperature of the vapor-deposited material to be stored uniform in the region where the nozzle is not located and the region where the nozzle which is the region that defines the interval L'is located, and the temperature of the vapor-deposited material surface in the storage box 531 is non-uniform. It is easy to become. Therefore, a problem that the vapor-deposited material deteriorates during continuous production for a long time tends to occur.

On the other hand, in the present embodiment, the value of L / L2 is set to a value of 0.8 or more and less than 1, and the first and second nozzles are widely arranged on the upper surface 31a of the storage box 31, so that the storage box 31 is used. The surface temperature of the contained vapor deposition material can be made uniform. As a result, deterioration of the vapor-deposited material can be suppressed, and the quality of the vapor-deposited material can be stabilized even in continuous production for a long time.

As described above, in the present embodiment, it is possible to form a film with a uniform in-plane film thickness distribution.
Further, it is possible to improve the efficiency of using the vapor-deposited material while suppressing the mask effect. By suppressing the mask effect, it is possible to form a higher-definition pattern. By improving the utilization efficiency of the thin-film deposition material, the production efficiency can be improved, and continuous production for a long time becomes possible. Further, deterioration of the vapor-deposited material can be suppressed.

The embodiment of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.

For example, in the above-described embodiment, the second nozzle 8 having one opening end 81 having a longitudinal direction along the X-axis direction is used as the second nozzle, but the present invention is not limited to this. For example, the second nozzle may be composed of a plurality of sub-nozzles arranged along the X-axis direction. 14 and 15 are views for explaining a second nozzle as a modified example thereof.

FIG. 14 is a top view of the vapor deposition source 103 provided with the second nozzle 18 as a modification.
FIG. 15 shows a perspective view of the second nozzle 18 included in the vapor deposition source 103 of FIG.

As shown in FIG. 14, the vapor deposition source 103 has a storage box 31 and a first nozzle group 10 and a second nozzle group 120 provided on the upper surface 31a of the storage box 31.
The second nozzle group 120 has a plurality of (five in the figure) second nozzles 18 provided in the bilateral regions 62 of the vapor deposition source 103. As shown in FIGS. 14 and 15, the second nozzle 18 is composed of three sub-nozzles 181 arranged along the X-axis direction. Each sub-nozzle 181 has a cylindrical shape in which the opening end 1811 is an inclined surface. In the auxiliary nozzle 181, the height of the portion 1811a located on the central region 61 side of the opening end 1811 at the opening end 1811 is higher than the height of the portion 1811b located on the outer side of the opening end 1811.

In this way, the second nozzle 18 may be composed of a plurality of sub-nozzles 181 to form the longitudinal direction of the opening of the second nozzle 18. In this case, the opening area of the second nozzle 18 is three times the area of the opening surface which is a flat surface having the inner edge portion of the opening end 1811 of one sub-nozzle 181 as the peripheral edge portion.
As a result, similarly to the second nozzle 8 described above, the length of the nozzle portion protruding from the adhesive plate can be shortened as compared with the case where one nozzle 90 shown in FIG. 11 is used, and the nozzle clogging can be caused. The occurrence can be suppressed.

Further, the shape of the second nozzle is not limited to that shown in the above-described embodiment and modification, and any nozzle having an opening end having a height different from that of the virtual reference plane at the peripheral edge may be used. The shape may be as shown in 16 to 19.

16 (A) is a perspective view of the second nozzle 28 as a modification, and FIG. 16 (B) is a cross-sectional view of the second nozzle 28.
As shown in FIG. 16, when the second nozzle 28 is viewed from above, the opening end 281 of the second nozzle 28 has a rectangular shape. The height h1 from the virtual reference surface 9 to the opening end 281 corresponding to one side of the rectangle is higher than the height h2 to the opening end 281 corresponding to the other three sides. Of the opening ends 281 of the second nozzle 28, the portion having the highest height from the virtual reference surface 9 is 281a, and the portion having the lowest height is 281b. When the second nozzle 28 is provided in the storage box and used as a vapor deposition source, the portion 281a is located on the central region 61 side, and the portion 281b is located on the outer side in the Y-axis direction from the central region 61.
The angle formed by the virtual line passing through the lowest height portion and the highest height portion at the inner edge portion of the opening end 281 and the virtual reference surface 9 is the inclination angle θ of the second nozzle 28. It is assumed that the virtual line is along the Y-axis direction when projected onto the upper surface 31a.

FIG. 17A is a perspective view of the second nozzle 38 as a modified example, and FIG. 17B is a cross-sectional view of the second nozzle 38.
As shown in FIG. 17, the second nozzle 38 has an open end 381. The opening surface, which is a plane having the inner edge portion of the opening end 381 as the peripheral edge, is inclined at an inclination angle θ with respect to the virtual reference surface 9. Of the opening ends 381 of the second nozzle 38, the portion having the highest height from the virtual reference surface 9 is 381a, and the portion having the lowest height is 381b. When the second nozzle 38 is provided in the storage box and used as a vapor deposition source, the portion 381a is located on the central region 61 side, and the portion 381b is located on the outer side in the Y-axis direction from the central region 61.

FIG. 18 is a cross-sectional view of the second nozzle 48 as a modification.
As shown in FIG. 18, the second nozzle hole 482 of the second nozzle 48 may be inclined with respect to the upper surface 31a of the storage box 31. In the example shown in FIG. 18, the outer wall of the second nozzle 48 is located perpendicular to the upper surface 31a.

As shown in FIG. 18, the second nozzle 48 has an open end 481. The opening surface, which is a plane having the inner edge portion of the opening end 481 as the peripheral edge, is inclined at an inclination angle θ with respect to the virtual reference surface 9. Of the opening ends 481 of the second nozzle 48, the portion having the highest height from the virtual reference surface 9 is 481a, and the portion having the lowest height is 481b. In the figure, the height of the portion 481a from the virtual reference plane 9 is h1, and the height of the portion 481b from the virtual reference plane 9 is h2. When the second nozzle 48 is provided in the storage box and used as a vapor deposition source, the portion 481a is located on the central region 61 side, and the portion 481b is located on the outer side in the Y-axis direction from the central region 61.

When the second nozzle 48 is provided in the storage box and provided in the vapor deposition apparatus as a vapor deposition source, the second hole shaft 483 of the second nozzle hole 482 is inclined toward the central region 61 side with respect to the vapor deposition surface of the substrate S. Located diagonally. In the above-described embodiment and each modification, in the state of the vapor deposition apparatus, the hole axis of the second nozzle is located so as to be orthogonal to the vapor deposition surface of the substrate S or the virtual extension surface of the vapor deposition surface.

FIG. 19 is a cross-sectional view of the second nozzle 58 as a modification.
As shown in FIG. 19, in addition to the second hole shaft 583 of the second nozzle hole 582 of the second nozzle 58 being oblique with respect to the upper surface 31a, the outer wall of the second nozzle 58 is the upper surface. It may be located at an angle to 31a. The outer side wall is parallel to the second hole shaft 583.

As shown in FIG. 19, the second nozzle 58 has an open end 581. The opening surface, which is a plane having the inner edge portion of the opening end 581 as the peripheral edge, is inclined at an inclination angle θ with respect to the virtual reference surface 9. Of the opening ends 581 of the second nozzle 58, the portion having the highest height from the virtual reference surface 9 is 581a, and the portion having the lowest height is 581b. In the figure, the height of the portion 581a from the virtual reference plane 9 is h1, and the height of the portion 581b from the virtual reference plane 9 is h2. When the second nozzle 58 is provided in the storage box and used as a vapor deposition source, the portion 581a is located on the central region 61 side, and the portion 581b is located on the outer side in the Y-axis direction from the central region 61.

When the second nozzle 58 is provided in the storage box and provided in the vapor deposition apparatus as a vapor deposition source, the second hole shaft 583 of the second nozzle hole 582 is inclined toward the central region 61 and is positioned obliquely with respect to the substrate S. To do.

Further, in the vapor deposition apparatus of the above-described embodiment, an example in which one vapor deposition source is provided is given, but as shown in FIG. 20, three vapor deposition sources may be provided.

FIG. 20A is a top view when three vapor deposition sources 203, 3 and 203 are arranged along the X-axis direction. 20 (B) is a schematic cross-sectional view taken along the line AA of FIG. 20 (A).

As shown in FIG. 20, the first hole shaft 73 of the first nozzle 7 provided in the vapor deposition source 3 located at the center of the three vapor deposition sources 203, 3 and 203 in a state of being mounted on the vapor deposition apparatus It is located orthogonal to the vapor deposition surface of the substrate S. The second hole shaft 83 of the second nozzle 8 provided in the thin-film deposition source 3 located at the center is orthogonal to the vapor deposition surface of the substrate S or the extension surface of the vapor deposition surface, or is tilted toward the central region 61. To do.
The first hole shaft 73 of the first nozzle 7 provided in the vapor deposition source 203 located on both sides of the central vapor deposition source 3 among the three vapor deposition sources 203, 3 and 203 is tilted toward the central vapor deposition source 3. To position. The second hole shaft 83 of the second nozzle 8 provided in the vapor deposition source 203 is positioned so as to be inclined toward the central region 61 and to the central vapor deposition source 3 side.

In the example shown in FIG. 20, the upper surface 31a of the vapor deposition source 3 located at the center is located parallel to the vapor deposition surface of the substrate S. The upper surface 231a of the vapor deposition source 203 located on both sides of the central vapor deposition source 3 is located at an obtuse angle with respect to the upper surface 31a of the vapor deposition source 3 located in the center. As described above, the upper surface 231a of the vapor deposition source 203 located on both sides of the three vapor deposition sources is inclined toward the vapor deposition source 3 located at the center.

In each vapor deposition source 203, the first nozzle 7 and the second nozzle 8 are arranged on the upper surface 231a so that the first hole shaft 73 and the second hole shaft 83 and the upper surface 231a are orthogonal to each other. Will be done. Therefore, the first hole shaft 73 of the first nozzle 7 and the second hole shaft 83 of the second nozzle 8 provided in each vapor deposition source 203 are located obliquely with respect to the substrate S.

The line projected on the ZY plane by the first hole axis 73 of the first nozzle 7 of the vapor deposition source 3 (203) is orthogonal to the vapor deposition surface of the substrate S or the extension surface of the vapor deposition surface.
The line projected on the ZY plane by the second hole axis 83 of the second nozzle 8 of the vapor deposition source 3 (203) is orthogonal to the vapor deposition surface of the substrate S or the extension surface of the vapor deposition surface. In the present embodiment, in the vapor deposition source 3 (203), the second hole shaft 83 of the second nozzle 8 is located perpendicular to the upper surface 31a (231a), but the central region 61 side is given. In this case, the line projected on the ZY plane of the second hole axis 83 is inclined toward the central region 61.

Here, the vapor deposition sources 203, 3 and 203 are configured to have storage boxes, respectively, but they may be configured to share one storage box.
Further, an example is given in which the upper surface 231a of the storage box 231 of the vapor deposition source 203 and the upper surface 31a of the storage box 31 of the vapor deposition source 3 are located at obtuse angles, but the upper surface 231a and the upper surface 31a have a flat positional relationship. It may be configured to be. In this case, the first hole shaft 73 of the first nozzle 7 provided in the vapor deposition source 203 is configured to be positioned so as to be inclined toward the central vapor deposition source 3, and the second nozzle 8 provided in the vapor deposition source 203 The second hole shaft 83 may be configured so as to be tilted toward the central region 61 and tilted toward the central vapor deposition source 3.

3, 103, 203 ... Evaporation source 4 ... Mask plate (mask material)
7 ... 1st nozzle 8, 18, 28, 38, 48, 58 ... 2nd nozzle 9 ... Virtual reference plane 10 ... 1st nozzle group 20 ... 2nd nozzle group 31 ... Storage box 41 ... Opening 61 ... Central region 62 ... Lateral region 71 ... Open end of first nozzle 72 ... First nozzle hole 73 ... First hole shaft (hole shaft of first nozzle hole)
81, 281, 381, 481, 581 ... Second nozzle opening ends 81a, 281a, 381a, 481a, 581a ... Parts 81b, 281b, 381b, 481b, located on the central region side at the opening end of the second nozzle, 581b ... Parts located on the outer side at the opening end of the second nozzle 82, 482, 582 ... Second nozzle holes 83, 4083, 5083 ... Second hole shaft (hole shaft of the second nozzle hole)
85 ... Virtual line 100 ... Evaporation device 181 ... Sub-nozzle 231 ... Storage box 411 ... First tapered surface 413 ... Plate surface S ... Substrate (deposited object)
Vm ... Evaporated material

Claims (12)

A storage box for accommodating the vapor deposition material to be deposited on the vapor deposition object,
A first consisting of a plurality of first nozzles provided in a central region in one direction of the storage box and having a first nozzle hole through which a vaporized substance of the vaporized material emitted toward the vapor deposition object passes. Nozzle group and
A second nozzle provided in a lateral region on each side of the storage box outward from the central region in one direction through which a vaporized substance of the vaporized material emitted toward the vapor deposition object passes. A thin-film deposition source including a second nozzle group consisting of a plurality of second nozzles having holes.
The distance between the second nozzles located at both ends of the storage box in the one direction is longer than the length of the vapor deposition object in the one direction.
At the opening end of the second nozzle from which the vaporized substance of the vaporized material is emitted, the height from the virtual reference plane orthogonal to the hole axis of the second nozzle hole is higher than the portion located on the central region side. The vapor deposition source is lower in the portion located on the outer side in the above-mentioned one direction. The vapor deposition source according to claim 1.
The end face of the portion of the opening end of the second nozzle located on the outer side in the one direction is the portion located on the central region side of the inner edge of the opening end of the second nozzle and the outside in the one direction. A virtual line including the virtual line that is inclined with respect to the virtual reference plane at an angle formed by the virtual line along the one direction and the virtual reference plane when projected onto the virtual reference plane through a portion located on the direction side. A vapor deposition source located closer to the vapor deposition object than the inclined surface. The vapor deposition source according to claim 1 or 2.
The line projected on the plane defined by the depth direction of the storage box and the one direction of the hole axis of the second nozzle hole is the vapor deposition surface of the vapor deposition object or an extension surface of the vapor deposition surface. A thin-film deposition source that is orthogonal or tilted toward the central region. The vapor deposition source according to claim 1.
The shape of the opening end of the second nozzle is a vapor deposition source having a longitudinal direction in a direction orthogonal to the one direction. The vapor deposition source according to claim 1.
The second nozzle is a vapor deposition source composed of a plurality of sub-nozzles arranged along a direction orthogonal to the one direction. The vapor deposition source according to claim 1.
The first nozzle is a vapor deposition source that emits the vaporized substance and has an open end having the same height from the virtual reference plane along the peripheral edge. A storage box for accommodating the vapor deposition material to be deposited on the vapor deposition object,
A first consisting of a plurality of first nozzles provided in a central region in one direction of the storage box and having a first nozzle hole through which a vaporized substance of the vaporized material emitted toward the vapor deposition object passes. Nozzle group and
A second nozzle provided in a lateral region on each side of the storage box outward from the central region in one direction through which a vaporized substance of the vaporized material emitted toward the vapor deposition object passes. A thin-film deposition source including a second nozzle group consisting of a plurality of second nozzles having holes.
The distance between the second nozzles located at both ends of the storage box in the one direction is longer than the length of the vapor deposition object in the one direction.
At the opening end of the second nozzle from which the vaporized substance of the vaporized material is emitted, the height from the virtual reference plane orthogonal to the hole axis of the second nozzle hole is higher than the portion located on the central region side. The vapor deposition source, which is located on the outer side in one direction, is lower.
A vapor deposition apparatus including a mask material arranged between the vapor deposition target and the vapor deposition source and having a plurality of openings that limit the adhesion range of the vaporized substance to the vapor deposition target. The vapor deposition apparatus according to claim 7.
The inner surface of the opening of the mask material has a tapered surface that tapers in the thickness direction from the vapor deposition source.
At the opening end of the second nozzle, the inclination angle formed by the opening end of the second nozzle and the virtual reference surface is θ, and the angle of the tapered surface with respect to the plate surface of the mask material is θm. When you do

The vapor deposition equipment that is. The vapor deposition apparatus according to claim 8.
The length of the vapor deposition object in one direction is Lw, the length of the first nozzle in one direction in which the first nozzle can be arranged in the storage box is L1, and the vapor deposition object and the second nozzle are When the distance is H,
The first nozzle is arranged in a region having a length of L1 / 2 obtained by the following equation in the one direction from the center of the storage box in the one direction.

Thin film deposition equipment. The vapor deposition apparatus according to claim 8 or 9.
When the distance between the second nozzles located at both ends of the storage box in one direction is L, and the length of the inner dimension of the storage box in the one direction is L2.

The vapor deposition equipment that is. The vapor deposition apparatus according to claim 8.
A vapor deposition apparatus further comprising a moving means for moving the vapor deposition object relative to the vapor deposition source in the one direction. The vapor deposition apparatus according to claim 7.
The three vapor deposition sources arranged in a direction orthogonal to the one direction are provided.
The hole axis of the first nozzle provided in the vapor deposition source located at the center of the three vapor deposition sources is located orthogonal to the vapor deposition surface of the vapor deposition object, and the hole axis of the second nozzle is the vapor deposition surface or Positioned orthogonal to the extension surface of the vapor deposition surface or tilted toward the central region.
Of the three vapor deposition sources, the hole shafts of the first nozzles provided in the vapor deposition sources located on both sides of the central vapor deposition source are inclined toward the central vapor deposition source side, and the hole shafts of the second nozzles are located. Is a vapor deposition apparatus that is tilted toward the central region and tilted toward the central vapor deposition source.

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