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WO2020118937A1 - Procédé de préparation pour une matrice noire et dispositif d'affichage - Google Patents

Procédé de préparation pour une matrice noire et dispositif d'affichage Download PDF

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Publication number
WO2020118937A1
WO2020118937A1 PCT/CN2019/078210 CN2019078210W WO2020118937A1 WO 2020118937 A1 WO2020118937 A1 WO 2020118937A1 CN 2019078210 W CN2019078210 W CN 2019078210W WO 2020118937 A1 WO2020118937 A1 WO 2020118937A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
layer
intermediate layer
photoresist
photoresist layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/078210
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English (en)
Chinese (zh)
Inventor
陈黎暄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Publication of WO2020118937A1 publication Critical patent/WO2020118937A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment

Definitions

  • the invention relates to the field of liquid crystal display, in particular to a method for preparing a black matrix and a display device.
  • the LCD display can reduce the reflection of ambient light on the surface of the display by reducing the reflection rate, so that the actual contrast perceived by the human eye in a bright environment increases, and the image quality effect is enhanced.
  • the black matrix prepared on the inner side of the glass of the upper substrate also generates light reflection. By improving the reflection of the black matrix, it is helpful to reduce the overall reflectivity of the LCD and improve the contrast.
  • the existing patent proposes a method of adding an organic or inorganic refractive index intermediate layer between the ordinary black matrix and the glass substrate to reduce the reflectivity of the black matrix.
  • an organic or inorganic refractive index intermediate layer between the ordinary black matrix and the glass substrate to reduce the reflectivity of the black matrix.
  • the intermediate layer material may cause absorption of transmitted light; if the intermediate layer
  • the material uses inorganic materials such as silicon oxynitride, etc., to make it patterned to be consistent with the black matrix, then a dry etching process needs to be added, which increases the complexity of preparation.
  • the object of the present invention is to provide a method for preparing a black matrix, which can remove the steps of the dry etching process of the intermediate layer.
  • the object of the present invention is to provide a method for preparing a black matrix, which can remove the steps of the dry etching process of the intermediate layer.
  • the present invention provides a method for preparing a black matrix, comprising the following steps: providing a substrate; coating a layer of refractive index temperature control material on the surface of the substrate; Pre-bake to form an intermediate layer; coat a photoresist material on the intermediate layer to form a photoresist layer; place a mask plate above the photoresist layer or below the substrate; use ultraviolet light
  • the photoresist layer is irradiated from top to bottom, or the substrate is irradiated from bottom to top, so that the intermediate layer and the photoresist layer are simultaneously cured and developed; the mask plate is removed and the substrate is baked so that The intermediate layer is patterned synchronously with the photoresist layer.
  • the substrate is provided with a first alignment mark; in the step of placing a mask plate above the photoresist layer or below the substrate, the mask plate A second alignment mark is provided, and the second alignment mark is in one-to-one correspondence with the first alignment mark, respectively.
  • first alignment marks are provided at four corners of the substrate, and the second alignment marks are provided at four corners of the mask plate.
  • the refractive index of the intermediate layer is 1.45 to 1.9, and the coating thickness of the intermediate layer is 35 to 85 nm.
  • the substrate is a color filter substrate or a glass substrate;
  • the refractive index temperature control material is a siloxane-based polymer.
  • the photoresist material includes a negative photoresist and a metal halide
  • the photoresist layer is a black matrix layer made of black photoresist.
  • the baking temperature is 70 ⁇ 110°C; in the step of removing the mask plate and baking the substrate, the baking temperature It is 230 ⁇ 300°C.
  • the intermediate layer and the photoresist layer are both positive photoresists, or the intermediate layer and the photoresist layer are both negative photoresists.
  • Another object of the present invention is to provide a display device including a substrate, an intermediate layer and a photoresist layer, a substrate, a photoresist layer and an intermediate layer, the intermediate layer being disposed between the substrate and the photoresist layer
  • the intermediate layer and the photoresist layer are simultaneously cured and developed on one side of the substrate, and the pattern of the intermediate layer corresponds to the pattern of the photoresist layer.
  • a first alignment mark is provided on the substrate, and a second alignment mark is provided on the mask plate, and the second alignment mark corresponds to the first alignment mark respectively.
  • the invention provides a method for preparing a black matrix, and the UV layer is used to pattern the intermediate layer together with the black matrix, thereby reducing the dry etching process of the intermediate layer and improving the manufacturing efficiency.
  • FIG. 1 is a flowchart of a method for preparing a black matrix in the present invention
  • FIG. 2 is a schematic structural diagram of a substrate according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of a substrate and an intermediate layer according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural view of a substrate, an intermediate layer, and a photoresist layer according to an embodiment of the present invention
  • FIG. 5 is a schematic view of the structure of the mask plate illumination according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of the first alignment mark of the substrate of FIG. 2;
  • FIG. 7 is a schematic diagram of the second alignment mark on the mask plate of FIG. 5;
  • FIG. 8 is a schematic diagram of the structure of the black matrix prepared by the present invention.
  • FIG. 9 is a schematic view of the structure of the present invention provides ultraviolet exposure from bottom to top;
  • 10 is a display device provided by the present invention.
  • the present invention provides a method for preparing a black matrix, including the following steps S1 to S7.
  • a substrate 21 is first provided, and a first alignment mark 211 is provided on the substrate 21.
  • a color film substrate or a common glass substrate can be used.
  • the added intermediate layer and the black matrix are patterned at once, which is used to divide adjacent color groups, block the color gaps, prevent light leakage or color mixing; and the intermediate layer can reduce the reflectivity of the black matrix, Thereby reducing the reflectivity of the panel and the reflectivity of the entire LCD, it can also share the difficulty and cost of polarizer surface treatment.
  • the substrate 21 is rectangular, and the first alignment marks 211 are provided at the four corners of the substrate 21.
  • the shape of the first alignment mark 211 may be rectangular or circular, and the present invention is preferably a circular mark.
  • the first alignment mark 211 can provide a position reference for coating and mask plate placement in other layers of the present invention.
  • the refractive index temperature control material is a siloxane-based material.
  • the material is generally a pure metal salt monomer such as Si(OR)4 or Ti(OR)4.
  • the refractive index characteristic of the material changes with temperature.
  • the refractive index of the layer is 1.45 ⁇ 1.9, and its coating thickness is 35 ⁇ 85nm.
  • the refractive index may be 1.45, 1.50, 1.6, 1.7, or 1.90, and the thickness of the coating intermediate layer 22 may be 35 nm, 45 nm, 55 nm, 75 nm, or 85 nm.
  • the third step is to pre-bake the refractive index temperature control material to form an intermediate layer 22.
  • the material to be coated is a transparent gel, so the material is pre-baked to stabilize it and form the intermediate layer 22, so as to facilitate the subsequent steps.
  • the pre-baking temperature may be 70°C, 80°C, 90°C or 110°C.
  • a photoresist material is coated on the intermediate layer 22 to form a photoresist layer 23.
  • the photoresist material is mainly negative photoresist and metal halide.
  • the photoresist layer 23 is a black matrix made of black photoresist.
  • the photoresist layer 23 may also be called a black matrix layer.
  • the thickness of the coated photoresist layer 23 is 0.8um, 1.0um, 1.4um or 1.5um.
  • the metal halide is silver bromide or silver chloride, which will turn black during exposure to form a black matrix.
  • the negative photoresist is the main component of the photoresist system.
  • the metal halide is silver bromide, which decomposes to form metal particles after exposure.
  • the metal particles will appear as small particles Black, with high optical density value.
  • a mask plate 24 is placed above the photoresist layer 23 or below the substrate 21. As shown in FIG. 7, the mask plate is provided with a second alignment mark 241.
  • the mask plate 24 has a plurality of mask plate through holes. The pattern formed by the plurality of mask plate through holes is consistent with the pattern of the photoresist layer 23.
  • the second alignment marks 241 are provided at four corners of the mask plate. When the mask plate 24 is installed, the second alignment marks 241 correspond to the first alignment marks 211 one-to-one.
  • the photoresist characteristics of the intermediate layer 22 are the same as the photoresist characteristics of the photoresist layer 23, which can be eliminated by a developer after being exposed to ultraviolet rays.
  • the intermediate layer 22 and the photoresist layer 23 in the illuminated area are insoluble in the developer at the same time, and the unexposed area can be removed with the developer, so that the intermediate layer 22 and the photoresist layer 23 form the same pattern, and the two simultaneously cure development.
  • the exposed area can be eliminated with the developer, resulting in that the photoresist layer 23 and the intermediate layer 22 can be eliminated by the developer at the same time, which can reduce the previous step of photolithography of the intermediate layer separately.
  • the ultraviolet light can be selected to irradiate from above the photoresist layer 23, or it can be irradiated from below the substrate 21, which does not affect the results of the present invention. Illuminate above 23.
  • the mask plate 24 is removed and the substrate is baked, so that the intermediate layer 22 and the photoresist layer 23 are patterned synchronously.
  • the mask plate 24 is selected as a positive photoresist material, which can be eliminated with a developing solution after being exposed to light. Finally, the black matrix structure shown in FIG. 8 can be obtained.
  • the baking temperature is only to preliminarily shape the intermediate layer 22, and the refractive index of the intermediate layer 22 is not optimized, it needs to be baked twice to make the refractive index of the intermediate layer 22 further Optimization, while making the intermediate layer 22 and the photoresist layer 23 form the same pattern, so that the two are simultaneously patterned.
  • the temperature range of the secondary baking is 230 to 300°C, preferably 230°C, 250°C, 270°C, 300°C.
  • the layer 23 is stably fixed to the substrate, forming the structure shown in FIG. 5.
  • the secondary baking can make the refractive index of the intermediate layer 22 reach the range of 1.45 to 1.9, which can further reduce the reflection of the black matrix, reduce the reflection characteristics of the overall LCD, and can also share the difficulty and cost of polarizer surface treatment.
  • the intermediate layer takes a siloxane-based material as an example, the material is mainly a pure metal salt monomer such as Si(OR)4 or Ti(OR)4, and the pure metal salt monomer is first polymerized
  • the reaction produces an inorganic polymer or an organic-inorganic hybrid polymer siloxane system.
  • the molecular structure of the polymer is: then the polymer is applied to the substrate to form a glue layer, which is finally stabilized by ultraviolet baking
  • the molecular structure of the material and the refractive index of the material can be controlled within 1.45 ⁇ 1.9.
  • the molecular structure formula of the intermediate layer finally formed is as follows.
  • the substrate 21 since the baking temperature is relatively high, the substrate 21 should have high temperature resistance characteristics, and it should not affect its normal operation.
  • the photoresist characteristics of the intermediate layer 22 and the photoresist layer 23 should be the same. Negative photoresist is used in the present invention. This feature cannot be eliminated by the developer after exposure. In other embodiments, positive photoresist can be used, which does not affect the results of the present invention.
  • the present invention provides a display device 20, which includes a substrate 21, an intermediate layer 22, an optical group layer 23, a colored layer 29, an ITO layer 25, a liquid crystal layer 26, and a thin film transistor Array 27 and a cover 28.
  • the intermediate layer 22 is provided on the side of the substrate 21, and the photoresist layer 23 is provided on the side of the intermediate layer 22 away from the substrate 21; the intermediate layer 22 and the photoresist layer 23 are simultaneously cured and developed, and synchronized Patterned.
  • the material of the intermediate layer 22 is a refractive index temperature control material of a siloxane-based polymer; the material of the photoresist layer 23 includes a negative photoresist and a metal halide.
  • the colored layer 29 is alternately provided on the substrate with the intermediate layer 22 and the photoresist layer 23.
  • the ITO layer 25 is provided on the side of the colored layer 29 and the photoresist layer 23 away from the intermediate layer 22.
  • the substrate 21 is arranged opposite to the cover plate 28 with a gap (not shown) between them to fill the liquid crystal layer 26.
  • the thin film transistor array 27 is disposed on the side of the cover plate 28 adjacent to the liquid crystal layer 27.
  • the ITO layer 25 cooperates with the thin film transistor array 27 to control whether the liquid crystal molecules of the liquid crystal layer 26 rotate with an electric field, thereby controlling the passing of light from the backlight system (not shown).
  • the light passing through the liquid crystal layer 26 is incident on the colored layer 29 and the photoresist layer 23, and the colored layer 29 only passes through three colors of red, blue, and green.
  • the photoresist layer 23 is used to block the pipeline between the colored layers 29 to prevent light leakage
  • the characteristics of the intermediate layer 22 and the photoresist layer 23 are the same to further prevent light leakage.
  • a first alignment mark 211 (marked in FIG. 6) is provided on the substrate 21, and the first alignment mark 211 is provided at four corners of the substrate 21.
  • the mask plate 24 is provided with second alignment marks 241 (marked in FIG. 7 ), the second alignment marks 241 are provided at four corners of the mask plate 24 and are respectively aligned with the first The marks 211 correspond to each other.
  • the intermediate layer 22 and the photoresist layer 23 are simultaneously cured and developed, and patterned simultaneously, and finally the mask plate is removed.
  • the display device reduces the dry etching process of the intermediate layer 22 and increases the efficiency of the process flow.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Optical Filters (AREA)

Abstract

Procédé de préparation pour une matrice noire et dispositif d'affichage (20) comprenant la fourniture d'un substrat (21) (S1) ; le revêtement de la surface supérieure du substrat (21) avec une couche de matériaux de contrôle de température d'indice de réfraction (S2) ; la pré-cuisson des matériaux de régulation de température d'indice de réfraction pour former une couche intermédiaire (22) (S3) ; le revêtement de la couche intermédiaire (22) par un matériau de résine photosensible pour former une couche de résine photosensible (23) (S4) ; la mise en place d'un masque (24) au-dessus de la couche de résine photosensible (23) ou en dessous du substrat (21) (S5) ; l'irradiation de la couche de résine photosensible (23) en utilisant des rayons ultraviolets de haut en bas ou l'irradiation du substrat (21) de bas en haut pour durcir et développer simultanément la couche intermédiaire (22) et la couche de résine photosensible (23) (S6) ; le retrait du masque (24) et la cuisson du substrat (21) pour obtenir un motif simultané de la couche intermédiaire (22) et de la couche de résine photosensible (23) (S7). Ainsi, une efficacité de préparation peut être améliorée.
PCT/CN2019/078210 2018-12-15 2019-03-15 Procédé de préparation pour une matrice noire et dispositif d'affichage Ceased WO2020118937A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201811537806.9A CN109471294A (zh) 2018-12-15 2018-12-15 一种黑色矩阵的制备方法及显示装置
CN201811537806.9 2018-12-15

Publications (1)

Publication Number Publication Date
WO2020118937A1 true WO2020118937A1 (fr) 2020-06-18

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WO (1) WO2020118937A1 (fr)

Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
CN110780375B (zh) * 2019-11-15 2022-07-22 京东方科技集团股份有限公司 偏光片及其制备方法、显示面板、显示装置
CN110993825B (zh) * 2019-12-19 2024-04-02 京东方科技集团股份有限公司 Oled板的制作方法及oled板
CN111352316B (zh) * 2020-04-15 2024-04-12 Tcl华星光电技术有限公司 光阻漂白与烘烤方法及其装置
CN114038882B (zh) * 2021-10-27 2022-12-20 重庆康佳光电技术研究院有限公司 一种微发光二极管显示器及其制作方法

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KR102254533B1 (ko) * 2014-10-22 2021-05-24 삼성디스플레이 주식회사 편광 소자의 제조 방법 및 이를 포함하는 표시 패널
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JPH06331817A (ja) * 1993-05-25 1994-12-02 Toppan Printing Co Ltd カラーフィルタ
CN102257426A (zh) * 2008-12-19 2011-11-23 夏普株式会社 基板和具备基板的显示面板
CN105026963A (zh) * 2013-03-07 2015-11-04 东丽株式会社 黑矩阵基板
CN105308484A (zh) * 2013-06-17 2016-02-03 东丽株式会社 叠层树脂黑矩阵基板的制造方法
CN103926743A (zh) * 2014-03-24 2014-07-16 京东方科技集团股份有限公司 彩膜基板及其制作方法、显示装置
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