[go: up one dir, main page]

WO2020158317A1 - Composition pour prémouillage et procédé de production de cellule solaire l'utilisant - Google Patents

Composition pour prémouillage et procédé de production de cellule solaire l'utilisant Download PDF

Info

Publication number
WO2020158317A1
WO2020158317A1 PCT/JP2020/000278 JP2020000278W WO2020158317A1 WO 2020158317 A1 WO2020158317 A1 WO 2020158317A1 JP 2020000278 W JP2020000278 W JP 2020000278W WO 2020158317 A1 WO2020158317 A1 WO 2020158317A1
Authority
WO
WIPO (PCT)
Prior art keywords
composition
impurity diffusion
ether
substrate
wetting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2020/000278
Other languages
English (en)
Japanese (ja)
Inventor
弓場智之
北田剛
秋本旭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Industries Inc
Original Assignee
Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Priority to JP2020501407A priority Critical patent/JPWO2020158317A1/ja
Publication of WO2020158317A1 publication Critical patent/WO2020158317A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a prewetting composition and a method for manufacturing a solar cell using the same.
  • the impurity layer forming step it is common to heat the semiconductor substrate in a gas atmosphere containing an impurity diffusion component.
  • a method of applying an impurity diffusion composition to a semiconductor substrate and heating the semiconductor substrate to form an impurity layer has also been proposed (see, for example, Patent Document 1).
  • the time required for this coating step is required to be as short as possible.
  • the spin coating method is known as one of the methods used in the step of applying the above impurity diffusion composition.
  • the spin coating method is a technique capable of forming a coating film having a uniform film thickness with high accuracy.
  • the spin coating method is adopted as a photoresist coating method in a semiconductor chip manufacturing process using a photolithography technique, for example.
  • the spin coating method has a problem that most of the coating liquid supplied onto the substrate is scattered by the centrifugal force to the outside of the rotating substrate, and most of the coating liquid used is discarded. Therefore, if the supply amount of the coating liquid is reduced, then there arises a problem that the coating liquid does not reach the end portion of the substrate and a portion where the coating film cannot be formed or a defect such as a hole in the coating film is likely to occur.
  • a pretreatment liquid called a pre-wetting liquid is applied to the substrate before applying the impurity diffusion composition to improve the wettability of the substrate and to apply a uniform coating with a small coating amount.
  • a method for obtaining a film has been proposed (see, for example, Patent Documents 2 and 3).
  • the uniformity of the impurity concentration in the substrate after diffusion is an important characteristic that determines the performance of the solar cell.
  • a pre-wetting solution to obtain a uniform coating, it is expected that the impurity concentration uniformity will be improved, but it may be affected by the air flow in the furnace during diffusion, or the temperature at which the substrate is put into the diffusion furnace is high. If (for example, 600° C. or higher), the impurity diffusion component at the edge of the substrate is likely to be scattered and the uniformity of the impurity concentration in the substrate surface after diffusion is deteriorated. As described above, there is a limit in improving the uniformity of the impurity concentration only by improving the uniformity of the coating film of the impurity diffusion composition.
  • An object of the present invention is to provide a composition for pre-wetting, which makes it possible to increase the uniformity of the impurity concentration in the surface of the substrate, and a method for manufacturing a solar cell using the composition.
  • the pre-wetting composition of the present invention is a pre-wetting composition which is previously applied to a semiconductor substrate before applying the impurity diffusion composition, wherein (a) an organic solvent, and ( b) A pre-wetting composition containing an organic base compound.
  • the pre-wetting composition of the present invention By using the pre-wetting composition of the present invention, a coating film having no defects and good uniformity can be obtained even if the amount of the impurity diffusion composition supplied is small. Further, it becomes possible to enhance the uniformity of the impurity concentration within the substrate surface after the impurity diffusion.
  • composition for pre-wetting The pre-wetting composition according to the embodiment of the present invention is previously applied to a semiconductor substrate before applying the impurity diffusion composition, and requires (a) an organic solvent and (b) an organic base compound. Contains as an ingredient of.
  • organic solvent one having a structure having 1 to 20 carbon atoms is preferable, one having a structure having 4 to 18 carbon atoms is more preferable, and one having a structure having 6 to 15 carbon atoms is further preferable.
  • the organic solvent preferably contains at least one functional group selected from hydroxyl group, ketone, ester, ether, acetate, amide and carbonate, and at least one functional group selected from hydroxyl group, ether and acetate.
  • at least one functional group selected from a hydroxyl group and an ether is contained.
  • organic solvent examples include acetone, methyl ethyl ketone, methyl-n-propyl ketone, methyl isopropyl ketone, methyl-n-butyl ketone, methyl isobutyl ketone, methyl-n-pentyl ketone, methyl-n-hexyl ketone, diethyl ketone, Ketone solvents such as dipropyl ketone, diisobutyl ketone, trimethylnonanone, cyclohexanone, cyclopentanone, methylcyclohexanone, 2,4-pentanedione and acetonylacetone; Diethyl ether, methyl ethyl ether, methyl-n-propyl ether, diisopropyl ether, tetrahydrofuran, methyl tetrahydrofuran, dioxane, dimethyl dioxane, ethylene glycol dimethyl ether
  • Aprotic polar solvent Methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, sec-butanol, t-butanol, n-pentanol, isopentanol, 2-methylbutanol, sec-pentanol, t-pentanol, 3 -Methoxybutanol, 3-methoxy-3-methylbutanol, n-hexanol, 2-methylpentanol, sec-hexanol, 2-ethylbutanol, sec-heptanol, n-octanol, 2-ethylhexanol, sec-octanol, n -Nonyl alcohol, n-decanol, sec-undecyl alcohol, trimethylnonyl alcohol, sec-tetradecyl alcohol, sec-heptadecyl alcohol, phenol, cyclo
  • the organic solvent is an organic solvent having a boiling point of 110° C. or higher and 210° C. or lower. It is more preferable that there is.
  • the boiling point range is more preferably 120° C. or higher and 185° C. or lower, and most preferably 165° C. or higher and 180° C. or lower.
  • organic solvent having a boiling point of 110° C. or higher and 210° C. or lower include dimethylformamide (boiling point 153° C.; the same applies hereinafter), diethylene glycol monomethyl ether (193° C.), 1-butanol (118° C.), propylene glycol monomethyl ether ( 121°C), cyclohexanol (161°C), ethylene glycol monoethyl ether acetate (156.4°C), ethylene glycol monomethyl ether acetate (145°C), methyl lactate (145°C), ethyl lactate (155°C), diacetone Alcohol (169°C), 3-methoxy-3-methyl-1-butanol (174°C), dipropylene glycol monomethyl ether (188°C), ⁇ -butyrolactone (204°C), ethyl acetoacetate (181°C), N- Methyl-2-pyrrolidone (204°C), propylene glycol t
  • the organic solvent is more preferably a primary alcohol, particularly 3-methoxy-3-methyl-1-butanol, from the viewpoint of improving the compatibility with the impurity diffusion composition and improving the uniformity of the coating film. Most preferably.
  • the content of the organic solvent is preferably 55 to 99.9 mass% in the pre-wet composition.
  • the content is more preferably 55 to 95% by mass, further preferably 55 to 80% by mass, and particularly preferably 55 to 70% by mass.
  • the total content of each component in the pre-wet composition is 100% by mass.
  • the organic basic compound contained in the pre-wetting composition according to the embodiment of the present invention is not particularly restricted, but it is presumed that it acts as follows. That is, since the organic base compound has an affinity with the semiconductor substrate surface, it modifies the semiconductor substrate surface when the pre-wetting liquid is applied. Then, when the impurity diffusion composition is applied thereon, the organic base on the surface of the semiconductor substrate strongly interacts with the impurity diffusion component in the impurity diffusion composition. Therefore, even when the semiconductor substrate is put into a diffusion furnace having a high temperature of, for example, 600° C.
  • Preferred organic base compounds are organic amine compounds and nitrogen-containing heterocyclic compounds in terms of further suppressing volatilization of impurity diffusion components.
  • the organic amine compound includes primary, secondary or tertiary aliphatic amines, mixed amines, aromatic amines and the like.
  • Preferred specific examples of primary aliphatic amines include methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, tert-butylamine, pentylamine, tert-amylamine, Cyclopentylamine, hexylamine, cyclohexylamine, heptylamine, octylamine, nonylamine, decylamine, dodecylamine, cetylamine, methylenediamine, ethylenediamine, tetraethylenepentamine, alanine, arginine, aspartic acid, glutamic acid, glycine, isoleucine, glycylleucine , Leucine, methionine, threonine, lysine, monoethanolamine, 3-amino-1-propanol, 4-amino-1-butan
  • secondary aliphatic amines include dimethylamine, diethylamine, di-n-propylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-sec-butylamine, dipentylamine, dicyclopentyl.
  • Preferred specific examples of the tertiary aliphatic amines include trimethylamine, triethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-sec-butylamine, tripentylamine, Tricyclopentylamine, trihexylamine, tricyclohexylamine, triheptylamine, trioctylamine, trinonylamine, tridecylamine, tridodecylamine, tricetylamine, N,N,N',N '-tetramethylmethylenediamine , N,N,N′,N′-tetramethylethylenediamine, N,N,N′,N′-tetramethyltetraethylenepentamine, triethylenediamine (DABCO), triethanolamine, tributanolamine, triisopropanolamine, Examples thereof include N-ethyldiethanolamine
  • Preferred specific examples of the mixed amines include dimethylethylamine, methylethylpropylamine, benzylamine, phenethylamine, benzyldimethylamine and the like.
  • aromatic amines include aniline derivatives (eg, aniline, N-methylaniline, N-ethylaniline, N-propylaniline, N,N-dimethylaniline, 2-methylaniline, 3-methylaniline, 4 -Methylaniline, ethylaniline, propylaniline, trimethylaniline, 2-nitroaniline, 3-nitroaniline, 4-nitroaniline, 2,4-dinitroaniline, 2,6-dinitroaniline, 3,5-dinitroaniline, N , N-dimethyltoluidine), diphenyl(p-tolyl)amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene, aminobenzoic acid, phenylalanine, aminocresol and the like.
  • aniline derivatives eg, aniline, N-methylaniline, N-ethylaniline, N-propylaniline, N,N-d
  • nitrogen-containing heterocyclic compound examples include pyrrole derivatives (eg, pyrrole, 2H-pyrrole, 1-methylpyrrole, 2,4-dimethylpyrrole, 2,5-dimethylpyrrole, N-methylpyrrole, etc.) and oxazole.
  • pyrrole derivatives eg, pyrrole, 2H-pyrrole, 1-methylpyrrole, 2,4-dimethylpyrrole, 2,5-dimethylpyrrole, N-methylpyrrole, etc.
  • oxazole examples include oxazole.
  • Derivatives eg, oxazole, isoxazole, etc.
  • thiazole derivatives eg, thiazole, isothiazole, etc.
  • imidazole derivatives eg, imidazole, 4-methylimidazole, 4-methyl-2-phenylimidazole, histidine, etc.
  • pyrazole derivatives furazan derivatives
  • Pyrroline derivatives eg, pyrroline, 2-methyl-1-pyrroline, etc.
  • pyrrolidine derivatives eg, pyrrolidine, N-methylpyrrolidine, 1-(2-hydroxyethyl)pyrrolidine, 3-pyrrolidino-1,2-propanediol, 1 -Methyl-2-pyrrolidine ethanol
  • imidazoline derivative imidazolidine derivative
  • pyridine derivative eg, pyridine, methylpyridine, ethylpyridine, propylpyridine, butylpyridine, 4-(1-but
  • piperazine derivatives eg piperazine, 1-(2-hydroxyethyl)piperazine, 1-[2-(2-hydroxyethoxy)ethyl]piperazine etc.
  • morpholine derivatives eg morpholine, 4-(2- Hydroxyethyl)morpholine etc.
  • indole derivatives eg indole, indole carboxylic acid, 3-indole methanol hydrate etc.
  • isoindole derivatives 1H-indazole derivatives, indoline Derivatives, quinoline derivatives (eg, quinoline, 3-quinolinecarbonitrile, 2,4-quinolinediol, etc.), isoquinoline derivatives, cinnoline derivatives, quinazoline derivatives, quinoxaline derivatives, phthalazine derivatives, purine derivatives, pteridine derivatives, carbazole derivatives, phenanthridine Examples thereof include derivatives, a
  • the organic base compound is preferably solid at room temperature (25° C.) from the viewpoint of further improving the uniformity of the impurity concentration within the semiconductor substrate surface after diffusion.
  • Aliphatic amines that are solid at room temperature (25°C) and nitrogen-containing heterocyclic compounds that are solid at room temperature (25°C) are more preferable, and pyridine derivatives that are solid at room temperature (25°C) are further preferable.
  • the content of the organic base compound is preferably 0.1 to 20 mass% in the pre-wet composition.
  • the amount is more preferably 0.5 to 10% by mass, and further preferably 1 to 5% by mass.
  • the pre-wetting composition according to the embodiment of the present invention further comprises (c) water, in that the amount of the impurity diffusion composition used can be further reduced without generating unpainted residue or defects. It is preferable to contain.
  • the pre-wet composition used in the present invention may contain a surfactant.
  • a surfactant a fluorine-based surfactant, a silicone-based surfactant, an acrylic surfactant, etc. are preferably used.
  • fluorine-based surfactant examples include 1,1,2,2-tetrafluorooctyl (1,1,2,2-tetrafluoropropyl) ether and 1,1,2,2-tetrafluorooctyl.
  • silicone-based surfactants include SH28PA, SH7PA, SH21PA, SH30PA, ST94PA (all manufactured by Toray Dow Corning Co., Ltd.), BYK067A, BYK310, BYK322, BYK331, BYK333, BYK355 (more, Big Chemie Japan. (Manufactured by Co., Ltd.) and the like.
  • acrylic surfactants examples include Polyflow 77 and Polyflow 75 (all manufactured by Kyoeisha Chemical Co., Ltd.).
  • a silicone-based surfactant and/or an acrylic-based surfactant is more preferably used.
  • the content of the surfactant is preferably 0.0001 to 3% by mass in the pre-wet composition.
  • the amount is more preferably 0.001 to 1% by mass, and further preferably 0.01 to 0.5% by mass.
  • a method for manufacturing a solar cell according to an embodiment of the present invention includes a first coating step of spin-coating the prewetting composition on one surface of a semiconductor substrate, and a substrate surface spin-coated with the pre-wetting composition.
  • an impurity layer forming step of forming an impurity layer includes a first coating step of spin-coating the prewetting composition on one surface of a semiconductor substrate, and a substrate surface spin-coated with the pre-wetting composition.
  • the semiconductor substrate is, for example, an n-type single crystal silicon having an impurity concentration of 10 15 to 10 16 atoms/cm 3 , polycrystalline silicon, and a crystalline silicon substrate in which other elements such as germanium and carbon are mixed. Can be mentioned.
  • a shape of the semiconductor substrate for example, as shown in FIG. 1, a wafer 2 having a circular shape in a plan view and having a substantially rectangular shape with rounded corners obtained by cutting a part of an arc is mentioned.
  • a cylindrical ingot made of single crystal silicon or the like manufactured by using the CZ method (Czochralski method) or the FZ method (float zone method) is thinly cut in a direction orthogonal to the axial direction of the cylinder. What is obtained by doing can be used. Further, for example, when the wafer 2 is an n-type semiconductor substrate, it is possible to use one in which an impurity element of Group 15 has been diffused in advance.
  • a solar cell has an array structure in which a plurality of solar cells manufactured from a solar cell substrate are connected to make a solar cell module, and further a plurality of solar cell modules are connected and spread. Since the solar cell module is generally rectangular, the wafer 2 is often processed into a substantially rectangular substrate A having rounded corners to improve the installation efficiency in the module.
  • the surface of the semiconductor substrate 1 be provided with an uneven shape (texture structure) 3 as shown in FIG.
  • the texture structure can be formed, for example, by wet-etching the entire surface of the substrate 1 with an alkaline solution.
  • the texture structure has a pyramid shape as shown in FIG. Etching is performed until the height of the texture reaches, for example, about 0.3 ⁇ m to 20 ⁇ m.
  • a solar cell having the above-described texture structure on the light-receiving surface light has a texture structure compared to a solar cell that uses a mirror-finished surface as a light-receiving surface, such as a wafer used for forming a semiconductor element. It is easy to be guided into the substrate while being reflected or refracted on the surface of. Therefore, the solar cell has high utilization efficiency of sunlight and is likely to be a solar cell capable of highly efficient power generation.
  • FIG. 3 is a process cross-sectional view showing an example of a method for manufacturing a solar cell according to an embodiment of the present invention.
  • the prewetting composition is supplied to one surface of the semiconductor substrate 1 and spin-coated to form a prewetting composition film 4 on the entire surface. To do.
  • the pre-wetting composition is preferably supplied to the center of the substrate from the viewpoint of coating film uniformity.
  • the substrate during the supply of the pre-wetting composition may be stopped, or may be supplied while being rotated at a preset spin coating rotation speed.
  • the rotation speed of spin coating is preferably 700 rpm or more, more preferably 1000 rpm or more, and most preferably 2000 rpm or more.
  • the rotation speed of spin coating is preferably 5000 rpm or less, and more preferably 4000 rpm or less.
  • the impurity diffusion composition when a texture structure is formed on the surface of the semiconductor substrate 1, it is possible to apply the impurity diffusion composition with a small amount of application liquid in a short application time due to the influence of unevenness and the increase in surface area. It is more difficult than with a smooth substrate.
  • the pre-wetting composition of the present invention it is possible to apply the impurity diffusion composition with a smaller amount of coating liquid in a shorter coating time even on a semiconductor substrate on which a texture structure is formed. Becomes
  • the impurity diffusion composition is supplied to the surface of the substrate 1 after pre-wetting, and spin coating is performed to form a coating film of the impurity diffusion composition on the entire surface. Form.
  • the impurity diffusion composition is supplied to the center of the substrate.
  • the substrate at the time of supplying the impurity diffusion composition may be temporarily stopped after the pre-wet coating, or it may be continuously rotated from the pre-wet coating without stopping the rotation and continuously rotated at a preset spin coating rotation number. May be supplied.
  • the rotation speed of spin coating is preferably 700 rpm or more, more preferably 1000 rpm or more, and most preferably 2000 rpm or more.
  • the rotation speed of spin coating is preferably 5000 rpm or less, and more preferably 4000 rpm or less.
  • the impurity diffusion composition used in the present invention is a liquid substance containing an impurity diffusion component.
  • the n-type impurity diffusion component is preferably a compound containing a Group 15 element, and more preferably a phosphorus compound.
  • the p-type impurity diffusion component is preferably a compound containing a Group 13 element, and more preferably a boron compound.
  • Examples of the phosphorus compound include diphosphorus pentoxide, phosphoric acid, polyphosphoric acid, methyl phosphate, dimethyl phosphate, trimethyl phosphate, ethyl phosphate, diethyl phosphate, triethyl phosphate, propyl phosphate, dipropyl phosphate, and phosphoric acid.
  • Phosphoric acid esters such as tripropyl, butyl phosphate, dibutyl phosphate, tributyl phosphate, phenyl phosphate, diphenyl phosphate, triphenyl phosphate, methyl phosphite, dimethyl phosphite, trimethyl phosphite, and phosphite.
  • boron compound examples include boric acid, diboron trioxide, methylboronic acid, phenylboronic acid, trimethyl borate, triethyl borate, tripropyl borate, tributyl borate, trioctyl borate, triphenyl borate and the like. it can.
  • a compound in which the impurity diffusion component in the method for producing a solar cell of the present invention contains a Group 13 element, in that it acts on the organic base compound contained in the prewetting composition to further improve the impurity concentration uniformity after diffusion.
  • a Group 13 element in that it acts on the organic base compound contained in the prewetting composition to further improve the impurity concentration uniformity after diffusion.
  • boric acid (B(OH) 3 ) and boron oxide (B 2 O 3 ) are more preferred.
  • the impurity diffusion composition used in the present invention may contain a solvent.
  • a solvent those exemplified in the above-mentioned composition for prewetting can be used.
  • the solvent composition of the impurity diffusion composition and the solvent composition of the pre-wetting composition are preferably the same.
  • the impurity diffusion composition used in the present invention may contain a resin.
  • the resin include vinyl polymers, acrylic polymers, epoxy resins, polyamides, polyimides, polyethers and polysiloxanes.
  • One specific example of a preferable resin is to include at least one resin selected from the group consisting of polyvinyl alcohol and polyether oxide.
  • Another specific example of the preferred resin is a polymer of a silane compound.
  • Silane compound polymers include polycondensates, addition polymers, and polyaddition products of monomers containing Si atoms.
  • the silane compound polymer is preferably polysiloxane, which is a polycondensation product of alkoxysilane, and specific examples thereof include the polysiloxane described in International Publication No. 2015/002132.
  • the impurity diffusion composition used in the present invention may contain a surfactant.
  • Fluorine-based surfactants silicone-based surfactants, acrylic-based surfactants, etc. are preferably used as the surfactant.
  • the impurity diffusion composition used in the present invention is compatible with the film of the pre-wetting composition that has already been applied, and also spreads to the edge of the semiconductor substrate 1 by the centrifugal force of spin coating.
  • the pre-wetting composition of the present invention even if the amount of the impurity diffusion composition supplied is small, the impurity diffusion composition can be effectively spread over the entire surface of the semiconductor substrate 1 to apply the impurity diffusion composition. A film can be formed.
  • the impurity diffusion composition since the impurity diffusion composition wets and spreads while being compatible with the film of the composition for pre-wetting, in the method for manufacturing a solar cell of the present invention, the impurity diffusion composition has a viscosity of a semiconductor substrate. 1 is applied while lowering the viscosity than when it was supplied.
  • a low-viscosity impurity diffusion composition is prepared from the beginning and spin-coated, there is a high possibility that the diffusion material will go around to the other surface side of the substrate and stain the other surface. If spin coating is performed while reducing the viscosity of the supplied impurity diffusion composition as in the method, it is less likely that the other surface will be contaminated, and the step of cleaning the other surface can be omitted.
  • the impurity diffusion composition film is dried by a hot plate, an oven or the like at a temperature of 50 to 200° C. for 10 seconds to 30 minutes to remove the residual solvent. You may do it.
  • the thickness of the impurity diffusion composition film after drying is preferably 100 nm or more from the viewpoint of the diffusivity of impurities, and is preferably 3 ⁇ m or less from the viewpoint of residues after etching.
  • impurities are diffused into the substrate 1 to form the impurity diffusion layer 6.
  • a known heat treatment that is, a thermal diffusion method can be used as a method for diffusing the impurities, and for example, a method such as electric heating, infrared heating, laser heating, or microwave heating can be used.
  • the time and temperature of thermal diffusion can be appropriately set so that desired diffusion characteristics such as impurity diffusion concentration and diffusion depth can be obtained.
  • the impurity is a boron compound
  • a p-type diffusion layer having a surface impurity concentration of 10 19 to 10 21 can be formed by heat diffusion at 800° C. to 1200° C. for 1 to 120 minutes.
  • the diffusion atmosphere is not particularly limited, and may be performed in the air, or the amount of oxygen in the atmosphere may be appropriately controlled by using an inert gas such as nitrogen or argon. From the viewpoint of shortening the diffusion time, it is preferable that the oxygen concentration in the atmosphere is 3% or less. If necessary, firing may be performed in the range of 200° C. to 850° C. before diffusion.
  • the pre-wetting composition is used.
  • the scattering of impurities at the edge portion of the substrate is suppressed, and the uniformity of the impurity concentration after diffusion within the substrate surface is improved.
  • the impurity diffusion layer can be formed on the substrate.
  • the impurity diffusion composition film 5 formed on the surface of the semiconductor substrate 1 by a known etching method.
  • the material used for etching is not particularly limited, but for example, one containing at least one of hydrogen fluoride, ammonium, phosphoric acid, sulfuric acid, and nitric acid as an etching component and water or an organic solvent as the other components. preferable.
  • a solar cell is manufactured by providing an appropriate structure such as an antireflection film or a reflective film on the surface of the substrate and then disposing electrodes on both surfaces.
  • the average value, the maximum value, and the minimum value for A to I are R Ave , R Max , and R Min , respectively, and the variation (R Max ⁇ R Min )/R Ave ⁇ 100 is 55% or less, preferably 50% or less. If it exceeds 55%, preferably more than 50%, it is judged as unacceptable.
  • Formulation example 1 ⁇ Preparation of p-type impurity diffusion composition> 73.74 g of water, 113.4 g of propylene glycol monomethyl ether, and 9.3 g of polyvinyl alcohol (polymerization degree 300) were sequentially added to a 300 mL three-necked flask. The temperature was raised to 80° C. by heating, and stirring was continued at 80° C. until the polyvinyl alcohol was completely dissolved. Then, 1.793 g of diboron trioxide was added, and stirring was continued at 80° C. for 1 hour. Then, the mixture was cooled to 40° C.
  • Blend Example 2 ⁇ Synthesis of polymer solution of silica compound> A 500 mL three-necked flask was charged with 112.47 g of 3-glycidyloxypropyltrimethoxysilane and 130.47 g of diethylene glycol monomethyl ether, and heated to 40°C. Then, a mixed solution of 0.24 g of concentrated sulfuric acid and 42.83 g of water was added dropwise. After completing the dropwise addition, stirring was continued at 40° C. for 1 hour.
  • the temperature was raised to 70° C., and after reaching 70° C., the mixture was stirred for 1 hour and 20 minutes. Then, the temperature was raised to 100° C., and after reaching 100° C., the mixture was stirred for 1 hour. Then, the oil bath temperature was raised to 120° C. and the mixture was stirred. After stirring at 120°C for 1 hour, the mixture was cooled to 40°C or lower to obtain a polymer solution of silica compound.
  • Prewetting compositions A to P were prepared at the mass ratios shown in Table 1 below.
  • Example 1 A semiconductor substrate made of n-type single crystal silicon having a side length of 156 mm was prepared as a substrate, and both surfaces were alkali-etched in order to remove slice damage and natural oxides. At this time, numerous irregularities (texture structure) having a typical width of 40 to 100 ⁇ m and a depth of 3 to 4 ⁇ m were formed on both surfaces of the semiconductor substrate, and this was used as a coating substrate.
  • Pre-wetting composition A (1.0 g) was dropped on the center of the substrate (A in FIG. 4), the substrate was rotated at 3000 rpm for 2 seconds, and spin-coated on the entire surface. After 2 seconds, 1.2 g of the impurity diffusion composition A was dropped on the center of the substrate (A in FIG. 4) while rotating the substrate at the same number of revolutions, and the whole surface was spin-coated by spinning at 3000 rpm for 8 seconds. The substrate after coating was dried in air on a hot plate at 140° C. for 30 seconds to form an impurity diffusion composition film.
  • the substrate with the impurity diffusion composition film was put into a diffusion furnace (manufactured by Koyo Thermo Systems Co., Ltd.) at 800° C., treated for 15 minutes, heated to 950° C. at 10° C./minute, and then at 950° C.
  • the impurity diffusion component was diffused for 30 minutes, the temperature was lowered to 800° C. at 10° C./min, and then taken out from the diffusion furnace.
  • the atmosphere in the diffusion furnace was an atmosphere of nitrogen 19 L/min and oxygen 0.6 L/min.
  • the substrate thus formed with the impurity diffusion layer was immersed in a 5% hydrofluoric acid solution for 5 minutes and washed with water to remove the impurity diffusion film.
  • Examples 2-14, Comparative Examples 1-4 The combination of the pre-wetting composition and the impurity diffusion composition was used to evaluate the coating uniformity and the sheet resistance uniformity in the same manner as in Example 1. The combinations and the results are shown in Table 2.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Photovoltaic Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

Le but de la présente invention est de fournir une composition pour prémouillage permettant l'obtention d'un film de revêtement exempt de défauts et ayant une bonne uniformité même si la quantité d'alimentation d'une composition de diffusion d'impuretés est faible et étant capable d'améliorer l'uniformité du plan de la concentration d'impuretés dans un substrat après diffusion d'impuretés ; et un procédé de production d'une cellule solaire utilisant cette composition pour prémouillage.　Afin d'atteindre l'objectif décrit ci-dessus, une composition pour prémouillage selon la présente invention est appliquée à l'avance sur un substrat semi-conducteur avant application d'une composition de diffusion d'impuretés et comprend (a) un solvant organique et (b) un composé de base organique.
PCT/JP2020/000278 2019-01-29 2020-01-08 Composition pour prémouillage et procédé de production de cellule solaire l'utilisant Ceased WO2020158317A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2020501407A JPWO2020158317A1 (ja) 2019-01-29 2020-01-08 プリウェット用組成物、及びそれを用いた太陽電池の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-012853 2019-01-29
JP2019012853 2019-01-29

Publications (1)

Publication Number Publication Date
WO2020158317A1 true WO2020158317A1 (fr) 2020-08-06

Family

ID=71842088

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2020/000278 Ceased WO2020158317A1 (fr) 2019-01-29 2020-01-08 Composition pour prémouillage et procédé de production de cellule solaire l'utilisant

Country Status (3)

Country Link
JP (1) JPWO2020158317A1 (fr)
TW (1) TW202029298A (fr)
WO (1) WO2020158317A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020194827A (ja) * 2019-05-24 2020-12-03 東京応化工業株式会社 拡散剤組成物、及び半導体基板の製造方法
WO2021192832A1 (fr) * 2020-03-27 2021-09-30 東京応化工業株式会社 Stratifié, procédé de fabrication de stratifié et procédé de fabrication de substrat semi-conducteur

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494871A (en) * 1978-01-12 1979-07-26 Toshiba Corp Semiconductor junction forming diffusion source
JP2003059825A (ja) * 2001-06-07 2003-02-28 Tokyo Electron Ltd 塗布膜形成方法および塗布膜形成装置
JP2009253145A (ja) * 2008-04-09 2009-10-29 Tokyo Ohka Kogyo Co Ltd 拡散層形成時の前処理方法
JP2013247286A (ja) * 2012-05-28 2013-12-09 Sharp Corp 太陽電池製造方法
WO2014007263A1 (fr) * 2012-07-04 2014-01-09 日本合成化学工業株式会社 Liquide de revêtement pour diffusion de dopant, procédé pour appliquer ledit liquide de revêtement, procédé pour produire un semi-conducteur associé, et semi-conducteur
JP2015088651A (ja) * 2013-10-31 2015-05-07 東京応化工業株式会社 プリウェット用組成物

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494871A (en) * 1978-01-12 1979-07-26 Toshiba Corp Semiconductor junction forming diffusion source
JP2003059825A (ja) * 2001-06-07 2003-02-28 Tokyo Electron Ltd 塗布膜形成方法および塗布膜形成装置
JP2009253145A (ja) * 2008-04-09 2009-10-29 Tokyo Ohka Kogyo Co Ltd 拡散層形成時の前処理方法
JP2013247286A (ja) * 2012-05-28 2013-12-09 Sharp Corp 太陽電池製造方法
WO2014007263A1 (fr) * 2012-07-04 2014-01-09 日本合成化学工業株式会社 Liquide de revêtement pour diffusion de dopant, procédé pour appliquer ledit liquide de revêtement, procédé pour produire un semi-conducteur associé, et semi-conducteur
JP2015088651A (ja) * 2013-10-31 2015-05-07 東京応化工業株式会社 プリウェット用組成物

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020194827A (ja) * 2019-05-24 2020-12-03 東京応化工業株式会社 拡散剤組成物、及び半導体基板の製造方法
JP7428478B2 (ja) 2019-05-24 2024-02-06 東京応化工業株式会社 拡散剤組成物、及び半導体基板の製造方法
WO2021192832A1 (fr) * 2020-03-27 2021-09-30 東京応化工業株式会社 Stratifié, procédé de fabrication de stratifié et procédé de fabrication de substrat semi-conducteur
JP7526019B2 (ja) 2020-03-27 2024-07-31 東京応化工業株式会社 積層体、積層体の製造方法、及び半導体基板の製造方法

Also Published As

Publication number Publication date
JPWO2020158317A1 (ja) 2021-12-02
TW202029298A (zh) 2020-08-01

Similar Documents

Publication Publication Date Title
EP3263626B1 (fr) Polymère contenant un squelette de silicone, composition de résine photodurcissable, film sec photodurcissable, stratifié et procédé de formation de motifs
TWI524149B (zh) Photocurable dry film, method for producing the same, pattern forming method, and electrical appliance for electronic parts
TWI494709B (zh) 用於塗層之剝離劑
EP3441419B1 (fr) Polymère contenant une structure de silicone, composition de résine photosensible, revêtement de résine photosensible, film sec photosensible, stratifié et procédé de formation de motif
WO2020158317A1 (fr) Composition pour prémouillage et procédé de production de cellule solaire l'utilisant
JP5970933B2 (ja) パターン形成方法
EP3597694A1 (fr) Composition de résine photosensible, revêtement de résine photosensible, film sec photosensible et matrice noire
JP7459511B2 (ja) 半導体素子の製造方法、および、太陽電池の製造方法
JP3781960B2 (ja) 反射防止膜材料およびパターン形成方法
CN120878542A (zh) 包含萘酚芳烷基树脂的抗蚀剂下层膜形成用组合物
TWI842901B (zh) 阻劑下層膜形成組成物、阻劑下層膜及半導體裝置之製造方法
TW202515987A (zh) 移除邊緣珠粒的組成物、顯影劑組成物、以及形成圖案的方法
JP6986425B2 (ja) 不純物拡散剤組成物、及び半導体基板の製造方法
CN119403882A (zh) 聚硅氧烷组合物
JP7268735B2 (ja) 感光性樹脂組成物、感光性ドライフィルム、積層体及びパターン形成方法
KR20190078305A (ko) 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법
JP2011133679A (ja) ネガ型感放射線性組成物、硬化パターン形成方法および硬化パターン
JP7787225B2 (ja) パターン形成方法
JP6616711B2 (ja) 拡散剤組成物
JP6838399B2 (ja) 半導体素子の製造方法および太陽電池の製造方法
KR102777079B1 (ko) 레지스트 하층막 형성 조성물
JP6616712B2 (ja) 半導体基板の製造方法
JP2025539453A (ja) ポリシロキサン組成物
KR20250066225A (ko) 레지스트 조성물 및 이를 이용한 패턴 형성 방법
KR20250161887A (ko) 레지스트 조성물 및 이를 이용한 패턴 형성 방법

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2020501407

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20747614

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20747614

Country of ref document: EP

Kind code of ref document: A1