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WO2020158210A1 - Procédé de gravure - Google Patents

Procédé de gravure Download PDF

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Publication number
WO2020158210A1
WO2020158210A1 PCT/JP2019/048847 JP2019048847W WO2020158210A1 WO 2020158210 A1 WO2020158210 A1 WO 2020158210A1 JP 2019048847 W JP2019048847 W JP 2019048847W WO 2020158210 A1 WO2020158210 A1 WO 2020158210A1
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WIPO (PCT)
Prior art keywords
wafer
etching
dropped
soi layer
film thickness
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Ceased
Application number
PCT/JP2019/048847
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English (en)
Japanese (ja)
Inventor
恭剛 丸山
晋 更級
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Publication of WO2020158210A1 publication Critical patent/WO2020158210A1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks

Definitions

  • the present invention uses spin etching on a SOI layer of a SOI wafer having a concentric circle-shaped film thickness distribution and a concentric surface/peripheral shape of a PW (polished wafer), etc.
  • the present invention relates to an etching method for improving a wafer shape.
  • Patent Document 1 describes a method of forming an oxide film on an SOI layer and removing the oxide film to form an SOI layer having a uniform film thickness. Further, paragraph 0076 of Patent Document 1 and FIG. 9 describe a spin etching apparatus for respectively providing ozone water, a hydrofluoric acid solution, and pure water used in the above method.
  • Patent Document 2 for an SOI layer having a concentric thickness distribution, a thermal oxide film having a concentric thickness distribution on the surface of the SOI layer so as to cancel the concentric thickness distribution. A technique for forming the is described.
  • the film thickness of the SOI layer is required to be uniform in-plane on the wafer surface.
  • the SOI The film thickness of the layer causes a concentric thickness distribution in the plane.
  • the polished wafer similarly to the PW leaf-to-leaf polishing, the polished wafer has a concentric surface/peripheral shape distribution. Therefore, it is an object to cancel such a concentric circle-shaped film thickness distribution and a concentric circle-shaped surface/outer peripheral shape distribution to improve the film thickness uniformity of the SOI layer and the wafer shape.
  • Local etching by laser or plasma is known as a method for improving the film thickness distribution of these SOI layers and the surface/peripheral shape distribution of the wafer such as PW.
  • the SOI layer, PW, etc. are used.
  • the application target is limited to a concentric SOI layer having a thicker film thickness distribution on the outer peripheral side than the central side, or a wafer such as a PW having a ridged outer peripheral side. Therefore, in addition to wafers having various surface shapes, for example, as described above, in addition to the SOI layer having a thicker film thickness distribution on the outer peripheral side than the central side and the wafer having the ridge shape on the outer peripheral side, the central side further has the outer peripheral side. For all thicker SOI wafers and wafers having a sagging shape on the outer peripheral side, the surface shape of the wafer cannot be improved.
  • the present invention has been made to solve the above problems, and proposes an etching method capable of improving the surface shape by spin etching, regardless of the surface shape of the wafer. To aim.
  • an etching solution is dropped onto the surface of the wafer, and by rotating the wafer, in an etching method for etching the surface of the wafer, the wafer before the etching
  • the surface shape is measured, in the etching, with the dropping of the etching liquid, a rinse liquid that suppresses the etching of the surface of the wafer by the etching liquid is dropped onto the surface of the wafer, and the position where the etching liquid is dropped and the
  • the etching method is characterized in that the position where the rinse liquid is dropped is determined based on the measured surface shape of the wafer before etching, and the surface of the wafer is etched.
  • the variation in the film thickness of the SOI layer due to polishing becomes concentric (the outer peripheral portion is thick or thin).
  • ozone water O 3 aqueous solution, hereinafter sometimes referred to simply as O 3 or O 3 water
  • HF aqueous solution hereinafter sometimes simply referred to as HF
  • the position where the rinsing liquid is dropped is usually fixed at the center of the wafer. That is, in this case, spin etching cannot sufficiently remove the concentric thickness variation of the SOI layer.
  • at least the position where the etching solution (HF) and the rinse solution are dropped can be changed in the radial direction of the wafer.
  • the treatment should be performed by shaking the position where each liquid is dropped so that the liquid is dropped outside the central portion of the wafer, that is, the rinse liquid that suppresses the etching reaction is dropped at a position different from the position where the etching liquid is dropped.
  • the rinsing liquid is supplied at the same time as the etching liquid to perform the etching, and the positions where the respective liquids are dropped are set according to the film thickness distribution of the SOI layer before the etching so that concentric circles are formed. Can be added to the local etching distribution.
  • the rinse liquid is a liquid having a function of suppressing etching of the surface of the wafer by the etching liquid (HF), and pure water or the like can be used, for example.
  • the dropping of the etching liquid and the dropping of the rinse liquid are performed at the same time.
  • the surface shape of the wafer to be subjected to the above-mentioned etching method before etching is changed from the central portion of the wafer to a concentric shape.
  • the present invention works particularly favorably, and the position where the etching solution and the rinsing solution are dropped is changed independently in the radial direction of the wafer based on the surface shape of the wafer before etching, thereby performing spin etching. , The concentric film thickness distribution or the concentric surface/peripheral shape distribution can be reliably canceled.
  • the etching liquid is dropped on the convex portion on the surface of the wafer before etching and the rinse liquid is dropped on the concave portion on the surface of the wafer before etching.
  • wafers having various surface shapes for example, an SOI wafer having an SOI layer thickness distribution thicker on the outer peripheral side than the center side, an SOI wafer having an SOI layer thickness distribution thicker on the central side than the outer peripheral side, and a peripheral edge
  • the surface shape of the wafer can be improved.
  • the position where the rinse liquid is dropped is higher than the position where the etching liquid is dropped.
  • the position where the etching solution is dropped is lower than the position where the rinse solution is dropped.
  • etching method is applied to various wafers having a concentric concavo-convex (surface shape) by polishing or the like, as well as an SOI wafer having an SOI layer having a film thickness distribution that changes concentrically from the center portion, a polished wafer, and the like. Is applicable to.
  • the type of wafer is not limited.
  • the above-described etching method includes a silicon wafer, a group IV semiconductor wafer such as Ge, SiGe, and SiC, a compound semiconductor wafer such as GaN, GaP, GaAs, and InP, an insulating wafer such as quartz and sapphire, and It can be applied to a wafer with a thin film having a thin film formed on the surface thereof, and the etching solution can also be appropriately selected according to the material of the wafer to which the present invention is applied.
  • a wafer having any surface shape such as an SOI layer having a concentric film thickness distribution or a wafer having a concentric surface/peripheral shape distribution can be used. Even if there is, it is possible to improve the film thickness uniformity of the SOI layer by canceling the distribution by spin etching and to improve the surface/peripheral shape of the wafer such as PW. Further, if necessary, local etching can be performed so as to have a target film thickness distribution.
  • FIG. 4 is a diagram showing an etching method of Example 1.
  • FIG. 5 is a diagram showing the results of Example 1.
  • FIG. 6 is a diagram showing an etching method of Example 2.
  • 5 is a diagram showing the results of Example 2.
  • FIG. 8 is a diagram showing an etching method of Example 3;
  • FIG. 5 is a diagram showing the results of Example 3. It is a figure which shows the etching method of a comparative example. It is a figure which shows the result of a comparative example.
  • the present invention particularly uses spin etching (cleaning) on an SOI layer having a concentric circular film thickness distribution or a wafer having a concentric circular surface/peripheral shape distribution to obtain a concentric circular film.
  • the invention is mainly intended to improve the surface shape of the wafer such as the uniformity of the film thickness of the SOI layer by performing etching so as to cancel the film thickness distribution or the concentric circular surface/outer peripheral shape distribution.
  • a spin etching apparatus is disclosed in Patent Document 1, but normally, the position where the etching liquid is dropped and the position where the rinse liquid is dropped are the same (for example, the central portion of the wafer). Fixed). In this case, spin etching cannot improve various surface shapes (irregularities) such as a concentric thickness distribution of the SOI layer and a concentric surface/peripheral shape distribution of the wafer.
  • the present inventors have determined that the position where the etching solution (HF) and the rinse solution (pure water) are dropped is a concentric film thickness distribution of the wafer before etching or a concentric circle.
  • etching solution HF
  • rinse solution pure water
  • the present invention by dropping the etching solution on the surface of the wafer, and by rotating the wafer, in the etching method of etching the surface of the wafer, to measure the surface shape of the wafer before etching, in the etching,
  • a rinse liquid that suppresses the etching of the surface of the wafer by the etching liquid is dropped onto the surface of the wafer, and the position where the etching liquid is dropped and the position where the rinse liquid is dropped are measured before the etching.
  • the etching method is characterized in that the surface of the wafer is etched by determining based on the shape.
  • the position where the etching liquid is dropped and the position where the rinse liquid is dropped are determined, and the surface of the wafer is etched to obtain a wafer having any surface shape. Even in this case, the surface shape can be improved by spin etching.
  • Patent Document 2 The difference between the present invention and Patent Document 2 is that the method of canceling the concentric circular film thickness distribution is spin etching in the present invention, whereas in Patent Document 2, thermal oxidation (at the time of temperature increase or temperature decrease) is performed. Oxidation).
  • spin-etching is disclosed in Patent Document 1, in spin-etching, the position where the etching liquid and the rinse liquid are dropped is determined based on the surface shape of the wafer before etching and the etching is performed. It cannot be obtained from either 1 or 2.
  • FIG. 1 shows a first example of the etching method of the present invention.
  • the wafer to be etched by the spin etching is a base substrate 1, a buried oxide layer 2 on the base substrate 1, and an SOI layer on the buried oxide layer 2. Silicon on insulator layer) 3.
  • the base substrate 1 is a silicon substrate, the buried oxide layer 2 is silicon oxide, and the SOI layer 3 is single crystal silicon.
  • the first example of the etching method of the present invention is as follows. First, the film thickness distribution is measured as the surface shape of the SOI layer 3 (step ST1).
  • the film thickness of the SOI layer 3 is required to be in-plane uniform on the wafer surface. For example, in the polishing process performed to improve the surface roughness of the SOI layer 3, the film thickness of the SOI layer 3 is This is because it usually has a concentric thickness distribution in the plane.
  • the SOI layer 3 has a thick film thickness distribution in the central portion and a thin film thickness distribution in the outer peripheral portion.
  • the position where the O 3 water and the etching liquid (HF) are dropped and the position where the rinse liquid is dropped are determined based on the film thickness distribution of the SOI layer 3 before etching measured in the above process (step ST2). ).
  • the position where the O 3 water and the etching solution (HF) are dropped is the center.
  • the position where the rinse liquid is dropped is O 3 water and the etching liquid (HF).
  • the outer peripheral side of the position where the liquid crystal is dropped for example, on the outer peripheral side of the center of the radius of the wafer.
  • the positions of dropping the O 3 water and the etching solution (HF) may be the same or different. However, it is preferable that these positions are as close as possible.
  • step ST3 the wafer is rotated around its center
  • O 3 water is dropped on the central portion of the wafer and a rinse liquid is dropped on the outer peripheral side of the central portion of the wafer to oxidize the surface of the SOI layer 3 (step ST4).
  • the O 3 water is dropped for a fixed amount or for a predetermined fixed period.
  • the rinse liquid is dropped on the central portion of the wafer (step ST5).
  • the rinse liquid flows from the central portion of the wafer to the outer peripheral portion to clean the surface of the wafer.
  • the etching liquid (HF) is dropped on the central portion of the wafer, and the rinse liquid is dropped on the outer peripheral side of the central portion of the wafer to etch the surface of the SOI layer 3 (step ST6). Note that the etching liquid (HF) is dropped for a fixed amount or for a predetermined fixed period.
  • the rinse solution is dropped on the central portion of the wafer (step ST7).
  • the rinse liquid flows from the central portion of the wafer to the outer peripheral portion to clean the surface of the wafer.
  • step ST8 spin drying is performed and the film thickness distribution of the SOI layer 3 is measured (step ST8).
  • the etching method is finished.
  • steps ST3 to ST8 are repeated.
  • the etching method of the present invention by performing spin etching for canceling the film thickness distribution on an SOI layer having a film thickness distribution that is thick in the central portion and thin in the outer peripheral portion, The surface shape of the SOI wafer can be improved.
  • FIG. 2 shows a second example of the etching method of the present invention.
  • a wafer as an etching target of spin etching includes a base substrate 1, a buried oxide layer 2 on the base substrate 1, and an SOI layer 3 on the buried oxide layer 2.
  • the base substrate 1 is a silicon substrate
  • the buried oxide layer 2 is silicon oxide
  • the SOI layer 3 is single crystal silicon.
  • a second example of the etching method of the present invention is as follows. First, similarly to the first example, the film thickness distribution is measured as the surface shape of the SOI layer 3 (step ST1), and the position where O 3 water, the etching solution (HF), and the rinse solution are dropped is measured. It is determined based on the film thickness distribution of the SOI layer 3 before etching (step ST2).
  • the SOI layer 3 has a thin film thickness distribution in the central portion and a thick film thickness in the outer peripheral portion. Therefore, the position where the O 3 water and the etching solution (HF) are dropped is the outer peripheral portion of the wafer. The position where the rinsing liquid is dropped is set to the central portion so that the etching liquid (HF) does not enter the central portion of the wafer and etch the SOI layer 3.
  • the SOI layer 3 has a sagging shape at the edge portion of the wafer. Therefore, the rinse liquid is dropped not only on the center of the wafer but also on the edge of the wafer. That is, the position where the rinsing liquid is dropped is both on the center side and the outer peripheral side of the position where the O 3 water and the etching liquid (HF) are dropped.
  • step ST3 the wafer is rotated around its center
  • O 3 water is dropped onto the outer peripheral portion of the wafer (at the position where the SOI layer 3 is thickest or at the center side thereof), and the rinse liquid is applied to the center portion of the wafer and The surface of the SOI layer 3 is oxidized by being dropped onto the edge portion (step ST4).
  • the rinse liquid is dropped onto the central portion of the wafer (step ST5).
  • the etching liquid (HF) is dropped on the same outer peripheral portion of the wafer as in step ST4, and the rinse liquid is dropped on the central portion and the edge portion of the wafer to etch the surface of the SOI layer 3 (step ST6).
  • the rinse liquid is dropped onto the central portion of the wafer (step ST7).
  • step ST8 spin drying is performed and the film thickness distribution of the SOI layer 3 is measured (step ST8).
  • the etching method is finished.
  • the steps ST3 to ST8 or the steps ST1 to ST8 are repeated.
  • the second example of the etching method of the present invention by performing the spin etching for canceling the film thickness distribution on the SOI layer having the thin film thickness distribution in the central portion and the thick film thickness in the outer peripheral portion, The surface shape of the SOI wafer can be improved.
  • FIG. 3 shows the etching method of the first embodiment.
  • the wafer was an SOI wafer with a diameter of 200 mm.
  • the etching method of Example 1 corresponds to the second example (FIG. 2) of the etching method of the present invention. That is, the SOI layer has a thin film thickness distribution in the central portion and a thick film thickness in the outer peripheral portion, and the thickest position is 20 mm from the edge of the wafer toward the central portion of the wafer. Further, the SOI layer has a sagging shape at the edge portion of the wafer. Therefore, the position where the O 3 water and the etching solution (HF) are dropped is a position slightly inside the outer peripheral portion of the wafer, that is, the thickest position of the SOI layer, for example, from the edge of the wafer toward the central portion of the wafer. The position is 25 mm. The positions where the rinsing liquid is dropped are the central portion and the edge portion of the wafer.
  • the SOI layer has a thin film thickness distribution in the central portion and a thick film thickness in the outer peripheral portion, and the thickest position is 20 mm from the edge of the wafer toward the central
  • Fig. 4 shows the results that local etching was realized by such an etching method and the surface shape of the wafer was improved.
  • the maximum value (Max) of the film thickness of the SOI layer before spin local etching is 80.3 nm
  • the minimum value (Min) is 73.9 nm
  • the average value (AVE) is 77.18 nm. is there. Therefore, the difference (range) between the maximum value and the minimum value of the film thickness of the SOI layer is 6.4 nm.
  • the maximum value of the film thickness of the SOI layer after the spin local etching is 75.1 nm
  • the minimum value is 69.4 nm
  • the average value is 72.45 nm. Therefore, the difference (range) between the maximum value and the minimum value of the thickness of the SOI layer is 5.7 nm.
  • FIG. 5 shows the etching method of the second embodiment.
  • the wafer was an SOI wafer with a diameter of 200 mm.
  • the etching method of Example 2 also corresponds to the second example (FIG. 2) of the etching method of the present invention. That is, the SOI layer has a thin film thickness distribution in the central portion and a thick film thickness in the outer peripheral portion, and the thickest position is 20 mm from the edge of the wafer toward the central portion of the wafer. Therefore, the position where the O 3 water and the etching solution (HF) are dropped is a position slightly inside the outer peripheral portion of the wafer, that is, the thickest position of the SOI layer, for example, from the edge of the wafer toward the central portion of the wafer. The position is 25 mm. The position where the rinsing liquid is dropped is the central portion of the wafer.
  • the SOI layer has a thin film thickness distribution in the central portion and a thick film thickness in the outer peripheral portion, and the thickest position is 20 mm from the edge of the wafer toward the central portion of the wafer. Therefore, the position where the O 3 water and the etching solution (HF) are
  • Fig. 6 shows the result that local etching was realized by such an etching method and the surface shape of the wafer was improved.
  • the maximum value of the film thickness of the SOI layer before spin local etching is 78 nm
  • the minimum value is 71.7 nm
  • the average value is 75.18 nm. Therefore, the difference (range) between the maximum value and the minimum value of the film thickness of the SOI layer is 6.3 nm.
  • the maximum value of the film thickness of the SOI layer after spin local etching is 73.6 nm
  • the minimum value is 67.5 nm
  • the average value is 71.1 nm. Therefore, the difference (range) between the maximum value and the minimum value of the film thickness of the SOI layer is 6.1 nm.
  • the local etching of the outer peripheral portion (projection) of the wafer is realized by the spin etching of the present invention, and the difference (range) between the maximum value and the minimum value of the film thickness of the SOI layer is 6. It can be seen that the thickness is improved from 3 nm to 6.1 nm. Specifically, as shown by the difference in FIG. 6, the difference between the maximum value and the minimum value of the film thickness of the SOI layer was improved by 0.2 nm.
  • FIG. 7 shows the etching method of the third embodiment.
  • the wafer was an SOI wafer with a diameter of 200 mm.
  • the etching method of Example 3 corresponds to the first example (FIG. 1) of the etching method of the present invention.
  • the wafer used in this example has an SOI layer having a thin central portion and a thick outer peripheral portion, and the thickest position is 10 mm from the edge of the wafer toward the central portion of the wafer.
  • the position where the O 3 water and the etching solution (HF) are dropped is the central part of the wafer, and the position where the rinse solution is dropped is the outer peripheral part of the wafer, that is, a position slightly inside the thickest position of the SOI layer. , 15 mm from the edge of the wafer toward the center of the wafer.
  • Example 3 the effect of locally etching the central portion of the wafer is shown. Therefore, if the difference between the maximum value and the minimum value of the film thickness of the SOI layer becomes large before and after the spin local etching. To some extent, it means that the effect of local etching occurs in the central portion.
  • FIG. 8 shows the results showing that the local etching was realized by Example 3 and the surface shape of the wafer was formed into a desired shape.
  • the maximum value of the film thickness of the SOI layer before spin local etching is 81.3 nm
  • the minimum value is 74.6 nm
  • the average value is 77.76 nm. Therefore, the difference (range) between the maximum value and the minimum value of the film thickness of the SOI layer is 6.7 nm.
  • the maximum value of the film thickness of the SOI layer after spin local etching is 74.1 nm
  • the minimum value is 66.9 nm
  • the average value is 70.36 nm. Therefore, the difference (range) between the maximum value and the minimum value of the film thickness of the SOI layer is 7.2 nm.
  • the wafer used in this example is an SOI layer having a thick central portion and a thin outer peripheral portion
  • the SOI layer It means that the difference (range) between the maximum value and the minimum value of the film thickness of is reduced. Further, if necessary, it is possible to intentionally perform local etching so as to have a desired film thickness distribution.
  • FIG. 9 shows an etching method of a comparative example.
  • the wafer was an SOI wafer with a diameter of 200 mm.
  • the wafer used in the etching method of the comparative example has an SOI layer having a thin central portion and a thick outer peripheral portion, as in Examples 1 to 3, and the thickest position is from the edge of the wafer toward the central portion of the wafer. It is assumed that the position is 20 mm. However, in the comparative example, the position where the O 3 water and the etching liquid (HF) are dropped is fixed to the center of the wafer, and the rinse liquid is not dropped onto the wafer.
  • HF etching liquid
  • the difference (range) between the maximum value and the minimum value of the film thickness of the SOI layer before spin etching is 3.9 nm.
  • the difference (range) between the maximum value and the minimum value of the thickness of the SOI layer after spin etching is also 3.9 nm. That is, as shown by the difference in FIG. 10, it can be seen that there is no change in the difference between the maximum value and the minimum value of the film thickness of the SOI layer, and local etching is not realized.
  • the maximum value and the minimum value of the film thickness of the SOI layer are matched by matching the variation of the concentric film thickness of the SOI layer due to polishing with the local etching. It is possible to improve the surface shape of the wafer by reducing the difference between the thickness of the SOI layer and the in-plane uniformity of the film thickness of the SOI layer. Moreover, since the film thickness distribution or the wafer shape can be controlled by local etching if necessary, it becomes easy to obtain a desired desired film thickness distribution or wafer shape.
  • the present invention is not limited to the above embodiment.
  • the above-described embodiment is an exemplification, and the invention having substantially the same configuration as the technical idea described in the scope of the claims of the present invention and exhibiting the same action and effect is the present invention It is included in the technical scope of.

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Abstract

Procédé de gravure, dans lequel une solution de gravure est égouttée sur une surface de plaquette et la surface de plaquette est gravée par rotation de la plaquette, le procédé étant caractérisé en ce que la forme de surface de la plaquette avant la gravure est mesurée, et pendant la gravure, en plus de l'égouttement de la solution de gravure, une solution de rinçage qui supprime la gravure de la surface de plaquette par la solution de gravure est égouttée sur la surface de plaquette, et une position pour égoutter la solution de gravure et une position pour égoutter la solution de rinçage sont déterminées sur la base de la forme de surface mesurée de la plaquette avant la gravure, et la surface de plaquette est gravée. Ainsi, l'invention concerne un procédé de gravure qui, pour des plaquettes de n'importe quelle forme de surface, peut améliorer la forme de surface par gravure par centrifugation.
PCT/JP2019/048847 2019-01-30 2019-12-13 Procédé de gravure Ceased WO2020158210A1 (fr)

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JP2019-014887 2019-01-30
JP2019014887A JP2020123676A (ja) 2019-01-30 2019-01-30 エッチング方法

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JP2022044147A (ja) * 2020-09-07 2022-03-17 信越半導体株式会社 ウェーハの表面形状調整方法
WO2025103687A1 (fr) * 2023-11-14 2025-05-22 Soitec Procede d'amincissement de la couche superficielle d'un substrat soi

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WO2018079494A1 (fr) * 2016-10-26 2018-05-03 東京エレクトロン株式会社 Procédé et dispositif de traitement de fluide

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Publication number Priority date Publication date Assignee Title
JP2003318154A (ja) * 2002-04-25 2003-11-07 Dainippon Screen Mfg Co Ltd 基板エッチング方法および基板エッチング装置
JP2004335923A (ja) * 2003-05-12 2004-11-25 Sony Corp エッチング方法およびエッチング装置
JP2007207810A (ja) * 2006-01-31 2007-08-16 Sumco Corp ウェーハの枚葉式エッチング装置及びウェーハの枚葉式エッチング方法
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WO2018079494A1 (fr) * 2016-10-26 2018-05-03 東京エレクトロン株式会社 Procédé et dispositif de traitement de fluide

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Publication number Priority date Publication date Assignee Title
JP2022044147A (ja) * 2020-09-07 2022-03-17 信越半導体株式会社 ウェーハの表面形状調整方法
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