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WO2020141960A1 - Gas removing apparatus and method - Google Patents

Gas removing apparatus and method Download PDF

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Publication number
WO2020141960A1
WO2020141960A1 PCT/KR2020/000200 KR2020000200W WO2020141960A1 WO 2020141960 A1 WO2020141960 A1 WO 2020141960A1 KR 2020000200 W KR2020000200 W KR 2020000200W WO 2020141960 A1 WO2020141960 A1 WO 2020141960A1
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WO
WIPO (PCT)
Prior art keywords
gas
exhaust
pipe
alarm
connection line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2020/000200
Other languages
French (fr)
Korean (ko)
Inventor
장원석
조수민
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Godoeng Co ltd
Samsung Electronics Co Ltd
Original Assignee
Godoeng Co ltd
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Godoeng Co ltd, Samsung Electronics Co Ltd filed Critical Godoeng Co ltd
Publication of WO2020141960A1 publication Critical patent/WO2020141960A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking

Definitions

  • the present invention relates to a gas removal apparatus and method, and more particularly, a gas removal apparatus and method for removing gas remaining in a pipe of a valve manifold box (VMB) that distributes gas to a substrate processing apparatus. It is about.
  • VMB valve manifold box
  • a substrate processing apparatus 4 such as a chemical vapor deposition (CVD) apparatus, which is a substrate processing apparatus for processing a substrate used for a semiconductor wafer, uses a plurality of gases according to the type of process to be performed. Can handle These multiple types of gas are generally distributed by type by the valve manifold box 2 and supplied to the substrate processing apparatus 4.
  • CVD chemical vapor deposition
  • the valve manifold box 2 includes a plurality of pipes 3a, 3b, 3c, 3d, 3e connected to the substrate processing apparatus 4 for gas supply. Different kinds of gas are supplied to the substrate processing apparatus 4 through different pipes 3a, 3b, 3c, 3d, and 3e. In addition, the pipes 3a, 3b, 3c, 3d, and 3e used for supplying one kind of gas are not used for supplying other kinds of gas. Therefore, when the type of gas used in the substrate processing apparatus 4 is changed due to the improvement of the process or the like, some of the pipes 3c and 3d among the pipes previously used may be left unused.
  • Some gases used in the substrate processing apparatus 4 are toxic or flammable at room temperature. In addition, it is not easy to check the type of gas remaining inside the unused piping 3c, 3d. Therefore, in order to remove the unused piping 3c, 3d, it is required to remove the gas remaining in the piping 3c, 3d.
  • the general gas removal device 1 removes the gas remaining in the pipes 3c and 3d through the exhaust pipe 5 for exhausting the gas used in the process in the substrate processing device 4. In this case, since the residual gas in the pipes 3c and 3d is discharged through the substrate processing apparatus 4, the process of the substrate processing apparatus 4 must be stopped when removing the gas.
  • the present invention is to solve the above technical problem, the object of the present invention is to provide a gas removal apparatus and method capable of removing gas remaining in the piping of the valve manifold box during operation of the substrate processing apparatus.
  • the present invention provides a gas removal device for removing gas in a pipe through which gas is transferred to the substrate processing device of a valve manifold box that distributes gas to the substrate processing device.
  • the gas removal device includes a connection line connected to an end of the pipe on the valve manifold box side; A purge gas injection unit for injecting purge gas into the pipe through the connection line; And an exhaust portion for exhausting the gas in the pipe to the outside through the connection line.
  • control unit for controlling the purge gas injection unit and the exhaust unit, the control unit to inject the purge gas into the pipe through the connection line and then purge the gas injection unit and the exhaust unit to exhaust the gas in the pipe Can be controlled.
  • the exhaust portion includes a suction pump that sucks gas in the pipe; It may include a filtration member for filtering the gas sucked by the suction pump.
  • the exhaust portion includes a gas concentration measuring member that measures the concentration of the gas before the gas sucked by the suction pump is exhausted to the outside; Further comprising an alarm member for generating an alarm, the control unit may control the alarm member to generate an alarm when the concentration measured by the gas concentration measuring member is greater than a predetermined concentration value.
  • the controller may control the purge gas injection unit and the exhaust unit to alternately repeat the purge gas injection and the exhaust a plurality of times.
  • a gas removal method for removing gas in a pipe through which gas is transferred to the substrate processing apparatus of a valve manifold box that distributes gas to the substrate processing apparatus.
  • a gas removal method includes: a purge gas injection step of injecting a purge gas into the pipe through an end of the valve manifold box side of the pipe; Thereafter, an exhaust step of exhausting the gas in the pipe to the outside through the end portion.
  • the evacuation step includes an intake step for sucking gas in the piping; It may include a filtration step of filtering the gas sucked in the intake step.
  • the gas removal apparatus and method may remove gas remaining in the piping of the valve manifold box during operation of the substrate processing apparatus.
  • FIG. 1 is a view showing a state in which a gas remaining in a pipe of a valve manifold box is removed using a general gas removal device.
  • FIG. 2 is a view schematically showing a gas removal apparatus according to an embodiment of the present invention.
  • FIG. 3 is a view showing a state in which the gas in the pipe of the valve manifold box is removed using the gas removal device of FIG. 2.
  • FIG. 4 is a flow chart showing a gas removal method according to an embodiment of the present invention.
  • FIG. 3 is a view showing the best mode for carrying out the present invention.
  • FIG. 2 is a block diagram schematically showing a gas removal apparatus 10 according to an embodiment of the present invention
  • FIG. 3 is a block diagram showing a gas removal system including the gas removal apparatus 10 of FIG. 2.
  • the degassing system can use the degassing device 10 to remove gas in the piping 31d of the valve manifold box 30. 2 and 3, the gas removal device 10 removes gas in the pipe 31d through which the gas is transferred to the substrate processing device 20 of the valve manifold box 30.
  • the gas removal device 10 includes a connection line 100, a purge gas injection unit 200, an exhaust unit 300 and a control unit 400.
  • the substrate processing apparatus 20 is an apparatus for processing a substrate such as a semiconductor wafer using a plurality of types of gases.
  • the substrate processing apparatus 20 may be a chemical vapor deposition (CVD) apparatus.
  • the valve manifold box (VMB: 30) distributes gas to the substrate processing apparatus 20.
  • the valve manifold box 30 includes pipes 31a, 31b, 31c, 31d, and 31e through which gas is transferred to the substrate processing apparatus 20.
  • a plurality of pipes 31a, 31b, 31c, 31d, and 31e may be provided. According to one embodiment, some of the pipes 31a, 31b, 31c, 31d, 31e 31c, 31d are not used.
  • the storage vessel 50 in which gas supplied to the substrate processing apparatus 20 is stored may be connected to the end of the pipe manifold box 30 of the pipes 31a, 31b, and 31e used.
  • connection line 100 is connected to the end of the valve manifold box 30 among both ends of the pipe 31d, which is required to remove internal gas among the pipes 31c and 31d which are not in use.
  • the pipe 31d may be provided with a first end valve 41 that opens and closes an end of the valve manifold box 30 side and a second end valve 42 that opens and closes an end of the substrate processing apparatus 20 side.
  • the purge gas injection unit 200 injects purge gas into the pipe 31d through the connection line 100.
  • the purge gas can be provided as an inert gas.
  • the purge gas may be provided as a nitrogen (N 2 ) gas.
  • the purge gas injection unit 200 includes a purge gas injection line 210 and a purge gas injection valve 220.
  • the purge gas injection line 210 is connected to a nitrogen storage container 60 and a connection line 100 in which high pressure nitrogen is stored.
  • the purge gas injection valve 220 opens and closes the purge gas injection line 210. According to one embodiment, the purge gas injection valve 220 opens and closes the purge gas injection line 210 under the control of the control unit 400.
  • the exhaust unit 300 exhausts the gas in the pipe 31d to the outside through the connection line 100.
  • the exhaust unit 300 includes a suction pump 310, a filtration member 320, a gas concentration measurement member 330, an alarm member 340, a first dilution unit 350, and a second dilution unit 360 and an auxiliary pump 370.
  • the suction pump 310 sucks gas in the pipe 31d.
  • the gas sucked by the suction pump 310 is transferred to the filtration member 320.
  • the suction pump 310 may be provided as a rotary pump.
  • the suction pump 310 may be connected to the connection line 100 by the suction line 311.
  • the suction line 311 may be provided with a suction line valve 312 that opens and closes the suction line 311.
  • the suction line valve 312 may open and close the suction line 311 under the control of the control unit 400.
  • the filtration member 320 filters the gas sucked by the suction pump 310.
  • the filtration member 320 may include a canister (Canister, 321) is provided with an adsorbent 322.
  • the adsorbent 322 adsorbs toxic, corrosive and/or flammable components of the gas sucked into the suction pump 310.
  • the gas sucked by the suction pump 310 passes through the canister 321 and is filtered by the adsorbent 322.
  • the canister 321 may be provided with a temperature sensing member 323 that measures the temperature of the adsorbent 322.
  • the temperature sensing member 323 transmits the measured temperature of the adsorbent 322 to the control unit 400.
  • the gas filtered by the filtration member 320 is discharged outward along the discharge line 380.
  • the filtration member 320 may be provided detachably. Therefore, it can be provided to facilitate replacement of the adsorbent 322 at the end of its life.
  • the gas concentration measuring member 330 measures the concentration of the gas before the gas sucked by the suction pump 310 is exhausted to the outside.
  • the concentration value of the gas measured by the gas concentration measuring member 330 is transmitted to the control unit 400.
  • the gas concentration measuring member 330 may be provided to selectively measure the concentration of the gas before entering the filtration member 320 or to measure the concentration of the gas after being filtered by the filtration member 320. Can.
  • the alarm member 340 generates an alarm. According to one embodiment, the alarm member 340 generates an alarm under the control of the control unit 400.
  • the alarm member 340 may be provided to allow an operator to recognize an alarm situation using sound. Alternatively, the alarm member 340 may be provided to generate light to allow an operator to recognize an alarm situation.
  • the first dilution unit 350 supplies the purge gas to the gas sucked by the suction pump 310 to dilute the gas sucked by the suction pump 310.
  • the first dilution unit 350 includes a first dilution line 351 and a first dilution line valve 352.
  • the first dilution line 351 is connected to the nitrogen storage container 60 and the suction line 311.
  • the first dilution line 351 is connected between the suction pump 310 of the suction line 311 and the suction line valve 312.
  • the first dilution line valve 352 opens and closes the first dilution line 351.
  • the first dilution line valve 352 may open and close the first dilution line 351 under the control of the control unit 400.
  • the second dilution unit 360 supplies a dilution by supplying a purge gas to the gas filtered by the filtration member 320.
  • the second dilution unit 360 includes a second dilution line 361 and a second dilution line valve 362.
  • the second dilution part 360 is selectively provided as needed. For example, when sufficient filtration is performed in the filtration member 320, the second dilution unit 360 may not be provided.
  • the second dilution line 361 is connected to the nitrogen storage container 60 and the discharge line 380.
  • the second dilution line 361 is connected between the auxiliary pump 370 of the discharge line 380 and the filtration member 320.
  • the second dilution line valve 362 opens and closes the second dilution line 361.
  • the second dilution line valve 362 may open and close the second dilution line 361 under the control of the control unit 400.
  • the auxiliary pump 370 provides a driving force to flow the gas so that the gas is more easily discharged through the discharge line 380.
  • the auxiliary pump 370 may be provided in an area adjacent to the outlet of the discharge line 380.
  • the auxiliary pump 370 may not be selectively provided according to the suction capacity of the suction pump 310.
  • the control unit 400 controls the purge gas injection unit 200 and the exhaust unit 300.
  • the control unit 400 injects the purge gas into the pipe 31d through the connection line 100, and then purges the gas injection unit 200 and the exhaust unit to exhaust the gas in the pipe 31d ( 300).
  • the control unit 400 may control the purge gas injection unit 200 and the exhaust unit 300 to alternately repeat the injection and exhaust of the purge gas multiple times.
  • the control unit 400 may control the purge gas injection unit 200 and the exhaust unit 300 to perform the purge gas injection and exhaust only once.
  • control unit 400 may control the alarm member 340 to generate an alarm when the concentration measured by the gas concentration measuring member 330 is greater than or equal to a preset concentration value.
  • control unit 400 may control the alarm member 340 to generate an alarm when the temperature of the adsorbent 322 measured by the temperature sensing member 323 is greater than or equal to a preset temperature value.
  • the degassing method of this embodiment may be performed by the degassing apparatus 10 having a different configuration and structure from the degassing apparatus 10 of FIG. 2.
  • the gas removal method is a method of removing gas in the pipe 31d of the valve manifold box 30.
  • the gas removal method includes a purge gas injection step (S10) and an exhaust step (S20).
  • the purge gas injection step (S10) the first end valve 41 of the pipe 31d is opened, and the second end valve 42 is closed, and the valve manifold box of the pipe 31d is connected to the pipe 31d.
  • Purge gas is injected through the side end.
  • the control unit 400 opens the purge gas injection line 210 and the suction line 311 is closed so that the purge gas injection valve 220 and the suction line valve 312 ) Control. Therefore, the nitrogen gas stored in the nitrogen storage container 60 is injected into the pipe 31d through the connection line 100, and the inflow of nitrogen gas into the suction pump 310 is blocked.
  • the first end valve 41 remains open and the second end valve 42 remains closed until gas removal by the gas removal method of the present embodiment is completed.
  • the concentration of the gas is lowered before the exhaust step (S20) by injecting the purge gas into the pipe 31d.
  • the exhaust step S20 is performed after the purge gas injection step S10.
  • the gas in the pipe 31d is exhausted to the outside through the end of the valve manifold box 30 side.
  • the exhaust step (S20) may include an intake step (S21), a first dilution step (S22), a filtration step (S23) and a second dilution step (S24).
  • the intake step (S21) and the exhaust step (S20) may be performed alternately a plurality of times or may be performed once, respectively, depending on the type and/or expected concentration and amount of gas remaining in the pipe 31d. have.
  • the gas in the pipe 31d is sucked.
  • the control unit 400 in the intake step (S21) the purge gas injection line 210 is closed and the suction line 311 is opened so that the purge gas injection valve 220 and the suction line valve 312 Control, and operate the suction pump 310 to suck the gas in the pipe 31d.
  • the gas sucked by the suction pump 310 passes through the suction line 311 and is transferred to the filtration member 320.
  • the gas sucked in the intake step (S21) is diluted.
  • the control unit 400 controls the first dilution line valve 352 to open the first dilution line 351 to remove nitrogen gas in the nitrogen storage container 60. Dilute the aspirated gas by supplying it.
  • the concentration of the inhaled gas may be higher than that of the subsequent execution when the purge gas injection step (S10) and the exhaust step (S20) are performed up to a predetermined number of times. It is performed to prevent the member 320 from being overloaded.
  • the first dilution step (S22) is performed a certain period from the initial execution of the purge gas injection step (S10) and the exhaust step (S20) It may be performed for a number of times, after which it may not.
  • the first dilution step (S22) may be performed during the first and second times of the purge gas injection step (S10) and the exhaust step (S20), but may not be performed after the third time.
  • the purge gas injection step (S10) and the exhaust step (S20) are performed only once, the first dilution step (S22) is based on the type and/or the expected concentration and amount of gas remaining in the pipe 31d. Accordingly, whether or not to selectively perform may be determined.
  • the gas sucked in the intake step S21 is filtered.
  • the gas sucked in the intake step (S21) is filtered by the adsorbent 322 while passing through the canister 321.
  • the temperature sensing member 323 measures the temperature of the adsorbent 322.
  • the control unit 400 controls the alarm member 340 to generate an alarm, controls all valves to be closed, and the suction pump 310 And the auxiliary pump 370. Accordingly, the operator can recognize the overload of the adsorbent 322, and can prevent damage to the device due to the overload of the adsorbent 322 and discharge of completely unfiltered gas to the outside.
  • the gas concentration measuring member 330 may measure the concentration of the gas before being filtered by the filtering member 320 and/or the concentration of the gas after being filtered by the filtering member 320. .
  • control unit 400 may control the alarm member 340 to generate an alarm, control all valves to be closed, and stop the suction pump 310 and the auxiliary pump 370.
  • the operator can recognize the overload of the adsorbent 322, and can prevent damage to the device due to the overload of the adsorbent 322 and discharge of completely unfiltered gas to the outside.
  • the performance of the adsorbent 322 is compared by comparing the concentration of the gas before being filtered by the filtering member 320 measured by the gas concentration measuring member 330 and the concentration of the gas after being filtered by the filtering member 320. Monitoring can be used to determine replacement.
  • the outer wall of the gas removal device 10 and some areas corresponding to the adsorbent 322 of the canister 321 are provided with a transparent material, so that the operator visually observes the color of the adsorbent 322 to adsorb the adsorbent 322 Can predict the performance and replacement.
  • the filtered gas is diluted in the filtration step (S23).
  • the control unit 400 controls the second dilution line valve 362 to open the second dilution line 361 to release nitrogen gas in the nitrogen storage container 60. Dilute the filtered gas by feeding.
  • the second dilution step (S24) is selectively performed. For example, when the concentration of the gas after filtration measured by the gas concentration measuring member 330 is equal to or less than a certain value, the control unit 400 prevents the second dilution step (S24) from being performed by the second dilution line valve 362 Can be controlled.
  • the filtration step (S23) is completed, or the filtration step (S23) and the second dilution step (S24) is completed gas is discharged to the outside through the discharge line (380).
  • the discharge line 380 is connected to a duct through which gas in the substrate processing apparatus 20 is exhausted, the filtration step (S23) is completed, or the filtration step (S23) and the second dilution step (S24) are completed. Gas may be discharged to the duct through the discharge line 380.
  • the gas removal apparatus and method according to the embodiment of the present invention are from the valve manifold box 30 end, not the end of the substrate processing apparatus 20 of the piping 31d of the valve manifold box 30.
  • By removing the gas it is possible to remove the gas remaining in the piping 31d of the valve manifold box 30 during operation of the substrate processing apparatus 20. Therefore, it is possible to prevent a decrease in productivity due to the shutdown of the substrate processing apparatus 20, and to reduce the cost for preparing the restart of the substrate processing apparatus 20.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

The present invention relates to a gas removing apparatus for removing gas in a pipe in a valve manifold box for distributing the gas to a substrate processing apparatus, wherein the gas is transferred to the substrate processing apparatus through the pipe. A gas removing apparatus according to the present invention includes: a connection line connected to the valve manifold box-side end portion of the pipe; a purge gas injection unit for injecting purge gas into the pipe through the connection line; and an exhaust unit for exhausting the gas in the pipe to the outside through the connection line.

Description

가스 제거 장치 및 방법Degassing device and method

본 발명은 가스 제거 장치 및 방법에 관한 것으로, 좀 더 상세하게는 기판 처리 장치로 가스를 배분하는 밸브 매니폴드 박스(Valve Manifold Box: VMB)의 배관 내에 잔류하는 가스를 제거하는 가스 제거 장치 및 방법에 관한 것이다.The present invention relates to a gas removal apparatus and method, and more particularly, a gas removal apparatus and method for removing gas remaining in a pipe of a valve manifold box (VMB) that distributes gas to a substrate processing apparatus. It is about.

도 1은 일반적인 가스 제거 장치(1)를 이용하여 밸브 매니폴드 박스(2)의 배관(3c, 3d) 내에 잔류하는 가스를 제거하는 모습을 나타낸 도면이다. 도 1을 참조하면, 반도체 웨이퍼 등에 사용되는 기판을 처리하는 기판 처리 장치 중 화학기상증착(CVD) 장치 등의 기판 처리 장치(4)는 수행하는 공정의 종류에 따라 복수 종류의 가스를 이용하여 기판을 처리할 수 있다. 이러한 복수 종류의 가스는 일반적으로 밸브 매니폴드 박스(2)에 의해 종류별로 분배되어 기판 처리 장치(4)로 공급된다. 1 is a view showing a state in which the gas remaining in the pipes 3c and 3d of the valve manifold box 2 is removed using a general gas removal device 1. Referring to FIG. 1, a substrate processing apparatus 4 such as a chemical vapor deposition (CVD) apparatus, which is a substrate processing apparatus for processing a substrate used for a semiconductor wafer, uses a plurality of gases according to the type of process to be performed. Can handle These multiple types of gas are generally distributed by type by the valve manifold box 2 and supplied to the substrate processing apparatus 4.

밸브 매니폴드 박스(2)는 가스 공급을 위해 기판 처리 장치(4)와 연결된 복수개의 배관(3a, 3b, 3c, 3d, 3e)을 포함한다. 다른 종류의 가스는 서로 다른 배관(3a, 3b, 3c, 3d, 3e)을 통해 기판 처리 장치(4)로 공급된다. 또한, 일 종류의 가스 공급에 사용되던 배관(3a, 3b, 3c, 3d, 3e)은 그와는 다른 종류의 가스 공급에는 사용되지 않는다. 따라서, 공정의 개선 등에 의해 기판 처리 장치(4)에서 사용되는 가스의 종류가 변경되는 경우, 기존에 사용되던 배관 중 일부의 배관(3c, 3d)은 사용되지 않은 상태로 방치될 수 있다.The valve manifold box 2 includes a plurality of pipes 3a, 3b, 3c, 3d, 3e connected to the substrate processing apparatus 4 for gas supply. Different kinds of gas are supplied to the substrate processing apparatus 4 through different pipes 3a, 3b, 3c, 3d, and 3e. In addition, the pipes 3a, 3b, 3c, 3d, and 3e used for supplying one kind of gas are not used for supplying other kinds of gas. Therefore, when the type of gas used in the substrate processing apparatus 4 is changed due to the improvement of the process or the like, some of the pipes 3c and 3d among the pipes previously used may be left unused.

기판 처리 장치(4)에서 사용되는 일부 가스는 독성 또는 상온에서의 가연성을 가진다. 또한, 사용되지 않는 상태의 배관(3c, 3d) 내부에 잔류하는 가스의 종류는 확인이 쉽지 않다. 따라서, 이러한 사용되지 않는 상태의 배관(3c, 3d)을 철거하기 위해서는 배관(3c, 3d) 내에 잔류하는 가스의 제거가 요구된다.Some gases used in the substrate processing apparatus 4 are toxic or flammable at room temperature. In addition, it is not easy to check the type of gas remaining inside the unused piping 3c, 3d. Therefore, in order to remove the unused piping 3c, 3d, it is required to remove the gas remaining in the piping 3c, 3d.

일반적인 가스 제거 장치(1)는 기판 처리 장치(4) 내에서 공정에 사용된 가스를 배기하는 배기관(5)을 통해 배관(3c, 3d) 내에 잔류하는 가스를 제거한다. 이 경우, 기판 처리 장치(4)를 통해 배관(3c, 3d) 내의 잔류 가스를 배출시키므로 가스 제거 시 기판 처리 장치(4)의 공정을 중단해야 한다. The general gas removal device 1 removes the gas remaining in the pipes 3c and 3d through the exhaust pipe 5 for exhausting the gas used in the process in the substrate processing device 4. In this case, since the residual gas in the pipes 3c and 3d is discharged through the substrate processing apparatus 4, the process of the substrate processing apparatus 4 must be stopped when removing the gas.

일반적으로 기판의 처리 공정을 수행하기 위해서는 온도 등의 기판 처리 장치(4)의 환경적인 조건이 충족되어야 하므로 중단된 기판 처리 장치(4)를 재가동하기 위해서는 이러한 조건을 충족시키기 위한 적지 않은 시간이 요구된다. In general, in order to perform the substrate processing process, environmental conditions of the substrate processing apparatus 4, such as temperature, must be satisfied. Therefore, in order to restart the suspended substrate processing apparatus 4, a considerable time for satisfying these conditions is required. do.

본 발명은 상술한 기술적 과제를 해결하기 위한 것으로써, 본 발명의 목적은 기판 처리 장치 가동 중에 밸브 매니폴드 박스의 배관에 잔류하는 가스를 제거할 수 있는 가스 제거 장치 및 방법을 제공하는 데 있다.The present invention is to solve the above technical problem, the object of the present invention is to provide a gas removal apparatus and method capable of removing gas remaining in the piping of the valve manifold box during operation of the substrate processing apparatus.

본 발명은 기판 처리 장치로 가스를 분배하는 밸브 매니폴드 박스의 상기 기판 처리 장치로 가스가 이송되는 배관 내의 가스를 제거하는 가스 제거 장치를 제공한다. 일 실시 예에 따르면, 가스 제거 장치는, 상기 배관의 상기 밸브 매니폴드 박스 측 단부에 연결되는 연결 라인과; 상기 연결 라인을 통해 상기 배관으로 퍼지 가스를 주입하는 퍼지 가스 주입부와; 상기 연결 라인을 통해 상기 배관 내의 가스를 외부로 배기하는 배기부를 포함한다.The present invention provides a gas removal device for removing gas in a pipe through which gas is transferred to the substrate processing device of a valve manifold box that distributes gas to the substrate processing device. According to an embodiment of the present invention, the gas removal device includes a connection line connected to an end of the pipe on the valve manifold box side; A purge gas injection unit for injecting purge gas into the pipe through the connection line; And an exhaust portion for exhausting the gas in the pipe to the outside through the connection line.

상기 퍼지 가스 주입부 및 상기 배기부를 제어하는 제어부를 더 포함하되, 상기 제어부는 상기 연결 라인을 통해 상기 배관으로 퍼지 가스를 주입한 후 상기 배관 내의 가스를 배기하도록 상기 퍼지 가스 주입부 및 상기 배기부를 제어할 수 있다.Further comprising a control unit for controlling the purge gas injection unit and the exhaust unit, the control unit to inject the purge gas into the pipe through the connection line and then purge the gas injection unit and the exhaust unit to exhaust the gas in the pipe Can be controlled.

상기 배기부는, 상기 배관 내의 가스를 흡입하는 흡입 펌프와; 상기 흡입 펌프에 의해 흡입된 가스를 여과하는 여과 부재를 포함할 수 있다.The exhaust portion includes a suction pump that sucks gas in the pipe; It may include a filtration member for filtering the gas sucked by the suction pump.

상기 배기부는, 상기 흡입 펌프에 의해 흡입된 가스가 외부로 배기되기 전에 상기 가스의 농도를 측정하는 가스 농도 측정 부재와; 알람을 발생시키는 알람 부재를 더 포함하되, 상기 제어부는 상기 가스 농도 측정 부재에 의해 측정된 상기 농도가 기 설정된 농도값 이상인 경우 알람을 발생시키도록 알람 부재를 제어할 수 있다.The exhaust portion includes a gas concentration measuring member that measures the concentration of the gas before the gas sucked by the suction pump is exhausted to the outside; Further comprising an alarm member for generating an alarm, the control unit may control the alarm member to generate an alarm when the concentration measured by the gas concentration measuring member is greater than a predetermined concentration value.

상기 제어부는 상기 퍼지 가스 주입 및 상기 배기를 번갈아 복수회 반복하도록 상기 퍼지 가스 주입부 및 상기 배기부를 제어할 수 있다.The controller may control the purge gas injection unit and the exhaust unit to alternately repeat the purge gas injection and the exhaust a plurality of times.

또한, 본 발명은 기판 처리 장치로 가스를 분배하는 밸브 매니폴드 박스의 상기 기판 처리 장치로 가스가 이송되는 배관 내의 가스를 제거하는 가스 제거 방법을 제공한다. 일 실시 예에 따르면, 가스 제거 방법은, 상기 배관에 상기 배관의 상기 밸브 매니폴드 박스 측 단부를 통해 퍼지 가스를 주입하는 퍼지 가스 주입 단계와; 이 후, 상기 단부를 통해 상기 배관 내의 가스를 외부로 배기하는 배기 단계를 포함한다.In addition, the present invention provides a gas removal method for removing gas in a pipe through which gas is transferred to the substrate processing apparatus of a valve manifold box that distributes gas to the substrate processing apparatus. According to an embodiment of the present invention, a gas removal method includes: a purge gas injection step of injecting a purge gas into the pipe through an end of the valve manifold box side of the pipe; Thereafter, an exhaust step of exhausting the gas in the pipe to the outside through the end portion.

상기 배기 단계는, 상기 배관 내의 가스를 흡입하는 흡기 단계와; 상기 흡기 단계에서 흡입된 가스를 여과하는 여과 단계를 포함할 수 있다.The evacuation step includes an intake step for sucking gas in the piping; It may include a filtration step of filtering the gas sucked in the intake step.

본 발명의 실시 예에 따르면, 가스 제거 장치 및 방법은 기판 처리 장치 가동 중에 밸브 매니폴드 박스의 배관에 잔류하는 가스를 제거할 수 있다. According to an embodiment of the present invention, the gas removal apparatus and method may remove gas remaining in the piping of the valve manifold box during operation of the substrate processing apparatus.

도 1은 일반적인 가스 제거 장치를 이용하여 밸브 매니폴드 박스의 배관 내에 잔류하는 가스를 제거하는 모습을 나타낸 도면이다.1 is a view showing a state in which a gas remaining in a pipe of a valve manifold box is removed using a general gas removal device.

도 2는 본 발명의 실시 예에 따른 가스 제거 장치를 개략적으로 나타낸 도면이다. 2 is a view schematically showing a gas removal apparatus according to an embodiment of the present invention.

도 3은 도 2의 가스 제거 장치를 사용하여 밸브 매니폴드 박스의 배관 내의 가스를 제거하는 모습을 나타낸 도면이다.3 is a view showing a state in which the gas in the pipe of the valve manifold box is removed using the gas removal device of FIG. 2.

도 4는 본 발명의 실시 예에 따른 가스 제거 방법을 나타낸 순서도이다.4 is a flow chart showing a gas removal method according to an embodiment of the present invention.

본 발명의 실시를 위한 최선의 형태를 보여주는 도면은 도 3이다.3 is a view showing the best mode for carrying out the present invention.

이하에서, 본 발명의 기술 분야에서 통상의 지식을 가진 자가 본 발명을 용이하게 실시할 수 있을 정도로, 본 발명의 실시 예들이 명확하고 상세하게 기재될 것이다.Hereinafter, embodiments of the present invention will be described clearly and in detail so that those skilled in the art of the present invention can easily implement the present invention.

도 2는 본 발명의 실시 예에 따른 가스 제거 장치(10)를 개략적으로 보여주는 블록도이고, 도 3은 도 2의 가스 제거 장치(10)를 포함하는 가스 제거 시스템을 보여주는 블록도이다. 가스 제거 시스템은 가스 제거 장치(10)를 사용하여 밸브 매니폴드 박스(30)의 배관(31d) 내의 가스를 제거할 수 있다. 도 2 및 도 3을 참조하면, 가스 제거 장치(10)는 밸브 매니폴드 박스(30)의 기판 처리 장치(20)로 가스가 이송되는 배관(31d) 내의 가스를 제거한다. 가스 제거 장치(10)는 연결 라인(100), 퍼지 가스 주입부(200), 배기부(300) 및 제어부(400)를 포함한다.2 is a block diagram schematically showing a gas removal apparatus 10 according to an embodiment of the present invention, and FIG. 3 is a block diagram showing a gas removal system including the gas removal apparatus 10 of FIG. 2. The degassing system can use the degassing device 10 to remove gas in the piping 31d of the valve manifold box 30. 2 and 3, the gas removal device 10 removes gas in the pipe 31d through which the gas is transferred to the substrate processing device 20 of the valve manifold box 30. The gas removal device 10 includes a connection line 100, a purge gas injection unit 200, an exhaust unit 300 and a control unit 400.

기판 처리 장치(20)는 복수 종류의 가스를 이용하여, 반도체 웨이퍼 등의 기판을 처리하는 장치이다. 예를 들면, 기판 처리 장치(20)는 화학기상증착(CVD) 장치일 수 있다.The substrate processing apparatus 20 is an apparatus for processing a substrate such as a semiconductor wafer using a plurality of types of gases. For example, the substrate processing apparatus 20 may be a chemical vapor deposition (CVD) apparatus.

밸브 매니폴드 박스(VMB: Valve Manifold Box, 30)는 기판 처리 장치(20)로 가스를 분배한다. 밸브 매니폴드 박스(30)는 기판 처리 장치(20)로 가스가 이송되는 배관(31a, 31b, 31c, 31d, 31e)을 포함한다. 배관(31a, 31b, 31c, 31d, 31e)은 복수개가 제공될 수 있다. 일 실시 예에 따르면, 배관(31a, 31b, 31c, 31d, 31e) 중 일부(31c, 31d)는 사용되지 않는다. 사용되는 배관(31a, 31b, 31e)의 밸브 매니폴드 박스(30) 측 단부에는 기판 처리 장치(20)에 공급되는 가스가 저장된 저장 용기(50)들이 연결될 수 있다.The valve manifold box (VMB: 30) distributes gas to the substrate processing apparatus 20. The valve manifold box 30 includes pipes 31a, 31b, 31c, 31d, and 31e through which gas is transferred to the substrate processing apparatus 20. A plurality of pipes 31a, 31b, 31c, 31d, and 31e may be provided. According to one embodiment, some of the pipes 31a, 31b, 31c, 31d, 31e 31c, 31d are not used. The storage vessel 50 in which gas supplied to the substrate processing apparatus 20 is stored may be connected to the end of the pipe manifold box 30 of the pipes 31a, 31b, and 31e used.

연결 라인(100)은 사용되지 않는 상태인 배관(31c, 31d) 중 내부 가스 제거가 요구되는 배관(31d)의 양 끝단 중 밸브 매니폴드 박스(30) 측 단부에 연결된다. 배관(31d)에는 밸브 매니폴드 박스(30) 측 단부를 개폐하는 제 1 단부 밸브(41)와 기판 처리 장치(20) 측 단부를 개폐하는 제 2 단부 밸브(42)가 제공될 수 있다.The connection line 100 is connected to the end of the valve manifold box 30 among both ends of the pipe 31d, which is required to remove internal gas among the pipes 31c and 31d which are not in use. The pipe 31d may be provided with a first end valve 41 that opens and closes an end of the valve manifold box 30 side and a second end valve 42 that opens and closes an end of the substrate processing apparatus 20 side.

퍼지 가스 주입부(200)는 연결 라인(100)을 통해 배관(31d)으로 퍼지 가스를 주입한다. 퍼지 가스는 비활성 가스로 제공될 수 있다. 예를 들면, 퍼지 가스는 질소(N2) 가스로 제공될 수 있다. 일 실시 예에 따르면, 퍼지 가스 주입부(200)는 퍼지 가스 주입 라인(210) 및 퍼지 가스 주입 밸브(220)를 포함한다. The purge gas injection unit 200 injects purge gas into the pipe 31d through the connection line 100. The purge gas can be provided as an inert gas. For example, the purge gas may be provided as a nitrogen (N 2 ) gas. According to an embodiment, the purge gas injection unit 200 includes a purge gas injection line 210 and a purge gas injection valve 220.

일 실시 예에 따르면, 퍼지 가스 주입 라인(210)은 고압의 질소가 저장된 질소 저장 용기(60) 및 연결 라인(100)에 연결된다. According to an embodiment, the purge gas injection line 210 is connected to a nitrogen storage container 60 and a connection line 100 in which high pressure nitrogen is stored.

퍼지 가스 주입 밸브(220)는 퍼지 가스 주입 라인(210)을 개폐한다. 일 실시 예에 따르면, 퍼지 가스 주입 밸브(220)는 제어부(400)의 제어에 의해 퍼지 가스 주입 라인(210)을 개폐한다. The purge gas injection valve 220 opens and closes the purge gas injection line 210. According to one embodiment, the purge gas injection valve 220 opens and closes the purge gas injection line 210 under the control of the control unit 400.

배기부(300)는 연결 라인(100)을 통해 배관(31d)내의 가스를 외부로 배기한다. 일 실시 예에 따르면, 배기부(300)는 흡입 펌프(310), 여과 부재(320), 가스 농도 측정 부재(330), 알람 부재(340), 제 1 희석부(350), 제 2 희석부(360) 및 보조 펌프(370)를 포함할 수 있다.The exhaust unit 300 exhausts the gas in the pipe 31d to the outside through the connection line 100. According to an embodiment, the exhaust unit 300 includes a suction pump 310, a filtration member 320, a gas concentration measurement member 330, an alarm member 340, a first dilution unit 350, and a second dilution unit 360 and an auxiliary pump 370.

흡입 펌프(310)는 배관(31d) 내의 가스를 흡입한다. 흡입 펌프(310)에 의해 흡입된 가스는 여과 부재(320)로 이송된다. 일 실시 예에 따르면, 흡입 펌프(310)는 로타리 펌프(Rotary pump)로 제공될 수 있다. 흡입 펌프(310)는 흡입 라인(311)에 의해 연결 라인(100)과 연결될 수 있다. 흡입 라인(311)에는 흡입 라인(311)을 개폐하는 흡입 라인 밸브(312)가 제공될 수 있다. 흡입 라인 밸브(312)는 제어부(400)의 제어에 의해 흡입 라인(311)을 개폐할 수 있다.The suction pump 310 sucks gas in the pipe 31d. The gas sucked by the suction pump 310 is transferred to the filtration member 320. According to an embodiment, the suction pump 310 may be provided as a rotary pump. The suction pump 310 may be connected to the connection line 100 by the suction line 311. The suction line 311 may be provided with a suction line valve 312 that opens and closes the suction line 311. The suction line valve 312 may open and close the suction line 311 under the control of the control unit 400.

여과 부재(320)는 흡입 펌프(310)에 의해 흡입된 가스를 여과한다. 일 실시 예에 따르면, 여과 부재(320)는 흡착제(322)가 제공되는 캐니스터(Canister, 321)를 포함 수 있다. 흡착제(322)는 흡입 펌프(310)에 흡입된 가스의 독성, 부식성 및/또는 가연성 성분을 흡착한다. 본 실시 예에 따르면, 흡입 펌프(310)에 의해 흡입된 가스는 캐니스터(321) 내부를 통과하며 흡착제(322)에 의해 여과된다. 캐니스터(321)에는 흡착제(322)의 온도를 측정하는 온도 감지 부재(323)가 제공될 수 있다. 온도 감지 부재(323)는 측정된 흡착제(322)의 온도를 제어부(400)로 전달한다. 여과 부재(320)에 의해 여과된 가스는 배출 라인(380)을 따라 외부로 배출된다. 여과 부재(320)는 탈착 가능하게 제공될 수 있다. 따라서, 수명이 다한 흡착제(322)의 교체가 용이하도록 제공될 수 있다.The filtration member 320 filters the gas sucked by the suction pump 310. According to one embodiment, the filtration member 320 may include a canister (Canister, 321) is provided with an adsorbent 322. The adsorbent 322 adsorbs toxic, corrosive and/or flammable components of the gas sucked into the suction pump 310. According to the present embodiment, the gas sucked by the suction pump 310 passes through the canister 321 and is filtered by the adsorbent 322. The canister 321 may be provided with a temperature sensing member 323 that measures the temperature of the adsorbent 322. The temperature sensing member 323 transmits the measured temperature of the adsorbent 322 to the control unit 400. The gas filtered by the filtration member 320 is discharged outward along the discharge line 380. The filtration member 320 may be provided detachably. Therefore, it can be provided to facilitate replacement of the adsorbent 322 at the end of its life.

가스 농도 측정 부재(330)는 흡입 펌프(310)에 의해 흡입된 가스가 외부로 배기되기 전에 가스의 농도를 측정한다. 가스 농도 측정 부재(330)에서 측정된 가스의 농도 값은 제어부(400)로 전달된다. 일 실시 예에 따르면, 가스 농도 측정 부재(330)는 선택적으로 여과 부재(320)에 유입되기 전의 가스의 농도를 측정하거나, 여과 부재(320)에 의해 여과된 후의 가스의 농도를 측정하도록 제공될 수 있다.The gas concentration measuring member 330 measures the concentration of the gas before the gas sucked by the suction pump 310 is exhausted to the outside. The concentration value of the gas measured by the gas concentration measuring member 330 is transmitted to the control unit 400. According to an embodiment, the gas concentration measuring member 330 may be provided to selectively measure the concentration of the gas before entering the filtration member 320 or to measure the concentration of the gas after being filtered by the filtration member 320. Can.

알람 부재(340)는 알람을 발생시킨다. 일 실시 예에 따르면, 알람 부재(340)는 제어부(400)의 제어에 의해 알람을 발생시킨다. 알람 부재(340)는 소리를 이용하여 작업자가 알람 상황을 인지할 수 있도록 제공될 수 있다. 이와 달리, 알람 부재(340)는 광을 발생시켜 작업자가 알람 상황을 인지할 수 있도록 제공될 수 있다.The alarm member 340 generates an alarm. According to one embodiment, the alarm member 340 generates an alarm under the control of the control unit 400. The alarm member 340 may be provided to allow an operator to recognize an alarm situation using sound. Alternatively, the alarm member 340 may be provided to generate light to allow an operator to recognize an alarm situation.

제 1 희석부(350)는 흡입 펌프(310)에 의해 흡입된 가스에 퍼지 가스를 공급하여 흡입 펌프(310)에 의해 흡입된 가스를 희석시킨다. 일 실시 예에 따르면, 제 1 희석부(350)는 제 1 희석 라인(351) 및 제 1 희석 라인 밸브(352)를 포함한다. The first dilution unit 350 supplies the purge gas to the gas sucked by the suction pump 310 to dilute the gas sucked by the suction pump 310. According to one embodiment, the first dilution unit 350 includes a first dilution line 351 and a first dilution line valve 352.

일 실시 예에 따르면, 제 1 희석 라인(351)은 질소 저장 용기(60) 및 흡입 라인(311)에 연결된다. 제 1 희석 라인(351)은 흡입 라인(311)의 흡입 펌프(310) 및 흡입 라인 밸브(312)의 사이에 연결된다.According to an embodiment, the first dilution line 351 is connected to the nitrogen storage container 60 and the suction line 311. The first dilution line 351 is connected between the suction pump 310 of the suction line 311 and the suction line valve 312.

제 1 희석 라인 밸브(352)는 제 1 희석 라인(351)을 개폐한다. 일 실시 예에 따르면, 제 1 희석 라인 밸브(352)는 제어부(400)의 제어에 의해 제 1 희석 라인(351)을 개폐할 수 있다.The first dilution line valve 352 opens and closes the first dilution line 351. According to one embodiment, the first dilution line valve 352 may open and close the first dilution line 351 under the control of the control unit 400.

제 2 희석부(360)는 여과 부재(320)에 의해 여과된 가스에 퍼지 가스를 공급하여 희석시킨다. 일 실시 예에 따르면, 제 2 희석부(360)는 제 2 희석 라인(361) 및 제 2 희석 라인 밸브(362)를 포함한다. 제 2 희석부(360)는 필요에 따라 선택적으로 제공된다. 예를 들면, 여과 부재(320)에서 충분한 여과가 수행되는 경우, 제 2 희석부(360)는 제공되지 않을 수 있다.The second dilution unit 360 supplies a dilution by supplying a purge gas to the gas filtered by the filtration member 320. According to one embodiment, the second dilution unit 360 includes a second dilution line 361 and a second dilution line valve 362. The second dilution part 360 is selectively provided as needed. For example, when sufficient filtration is performed in the filtration member 320, the second dilution unit 360 may not be provided.

일 실시 예에 따르면, 제 2 희석 라인(361)은 질소 저장 용기(60)와 배출 라인(380)에 연결된다. 제 2 희석 라인(361)은 배출 라인(380)의 보조 펌프(370) 및 여과 부재(320)의 사이에 연결된다.According to one embodiment, the second dilution line 361 is connected to the nitrogen storage container 60 and the discharge line 380. The second dilution line 361 is connected between the auxiliary pump 370 of the discharge line 380 and the filtration member 320.

제 2 희석 라인 밸브(362)는 제 2 희석 라인(361)을 개폐한다. 일 실시 예에 따르면, 제 2 희석 라인 밸브(362)는 제어부(400)의 제어에 의해 제 2 희석 라인(361)을 개폐할 수 있다.The second dilution line valve 362 opens and closes the second dilution line 361. According to one embodiment, the second dilution line valve 362 may open and close the second dilution line 361 under the control of the control unit 400.

보조 펌프(370)는 배출 라인(380)을 통해 가스가 보다 용이하게 배출되도록 가스를 유동시키는 구동력을 제공한다. 보조 펌프(370)는 배출 라인(380)의 배출구에 인접한 영역에 제공될 수 있다. 보조 펌프(370)는 흡입 펌프(310)의 흡입 용량에 따라 선택적으로 제공되지 않을 수 있다. The auxiliary pump 370 provides a driving force to flow the gas so that the gas is more easily discharged through the discharge line 380. The auxiliary pump 370 may be provided in an area adjacent to the outlet of the discharge line 380. The auxiliary pump 370 may not be selectively provided according to the suction capacity of the suction pump 310.

제어부(400)는 퍼지 가스 주입부(200) 및 배기부(300)를 제어한다. 일 실시 예에 따르면, 제어부(400)는 연결 라인(100)을 통해 배관(31d)으로 퍼지 가스를 주입한 후, 배관(31d) 내의 가스를 배기하도록 퍼지 가스 주입부(200) 및 배기부(300)를 제어한다. 일 실시 예에 따르면, 제어부(400)는 퍼지 가스 주입 및 배기를 번갈아 복수회 반복하도록 퍼지 가스 주입부(200) 및 배기부(300)를 제어할 수 있다. 이와 달리, 제어부(400)는 퍼지 가스 주입 및 배기를 1회만 수행하도록 퍼지 가스 주입부(200) 및 배기부(300)를 제어할 수 있다.The control unit 400 controls the purge gas injection unit 200 and the exhaust unit 300. According to an embodiment, the control unit 400 injects the purge gas into the pipe 31d through the connection line 100, and then purges the gas injection unit 200 and the exhaust unit to exhaust the gas in the pipe 31d ( 300). According to an embodiment, the control unit 400 may control the purge gas injection unit 200 and the exhaust unit 300 to alternately repeat the injection and exhaust of the purge gas multiple times. Alternatively, the control unit 400 may control the purge gas injection unit 200 and the exhaust unit 300 to perform the purge gas injection and exhaust only once.

또한, 제어부(400)는 가스 농도 측정 부재(330)에 의해 측정된 상기 농도가 기 설정된 농도값 이상인 경우 알람을 발생시키도록 알람 부재(340)를 제어할 수 있다. In addition, the control unit 400 may control the alarm member 340 to generate an alarm when the concentration measured by the gas concentration measuring member 330 is greater than or equal to a preset concentration value.

또한, 제어부(400)는 온도 감지 부재(323)에 의해 측정된 흡착제(322)의 온도가 기 설정된 온도값 이상인 경우 알람을 발생시키도록 알람 부재(340)를 제어할 수 있다.In addition, the control unit 400 may control the alarm member 340 to generate an alarm when the temperature of the adsorbent 322 measured by the temperature sensing member 323 is greater than or equal to a preset temperature value.

이하, 본 발명의 실시 예에 따른 가스 제거 방법을 도 2의 가스 제거 장치(10)를 이용하여 설명한다. 이와 달리, 본 실시 예의 가스 제거 방법은 도 2의 가스 제거 장치(10)와 상이한 구성 및 구조를 가지는 가스 제거 장치(10)에 의해 수행될 수 있다. Hereinafter, a gas removal method according to an embodiment of the present invention will be described using the gas removal device 10 of FIG. 2. Alternatively, the degassing method of this embodiment may be performed by the degassing apparatus 10 having a different configuration and structure from the degassing apparatus 10 of FIG. 2.

도 4는 본 발명의 실시 예에 따른 가스 제거 방법을 나타낸 순서도이다. 도 2 내지 도 4를 참조하면, 가스 제거 방법은 밸브 매니폴드 박스(30)의 배관(31d) 내의 가스를 제거하는 방법이다. 일 실시 예에 따르면, 가스 제거 방법은 퍼지 가스 주입 단계(S10) 및 배기 단계(S20)를 포함한다. 4 is a flow chart showing a gas removal method according to an embodiment of the present invention. 2 to 4, the gas removal method is a method of removing gas in the pipe 31d of the valve manifold box 30. According to one embodiment, the gas removal method includes a purge gas injection step (S10) and an exhaust step (S20).

퍼지 가스 주입 단계(S10)에서는 배관(31d)의 제 1 단부 밸브(41)는 열리고, 제 2 단부 밸브(42)는 닫힌 상태에서, 배관(31d)에 배관(31d)의 밸브 매니폴드 박스(30) 측 단부를 통해 퍼지 가스를 주입한다. 일 실시 예에 따르면, 퍼지 가스 주입 단계(S10)에서 제어부(400)는 퍼지 가스 주입 라인(210)은 개방하고 흡입 라인(311)은 폐쇄하도록 퍼지 가스 주입 밸브(220) 및 흡입 라인 밸브(312)를 제어한다. 따라서, 질소 저장 용기(60)에 저장된 질소 가스는 연결 라인(100)을 통해 배관(31d)으로 주입되고, 질소 가스의 흡입 펌프(310)로의 유입은 차단된다. In the purge gas injection step (S10), the first end valve 41 of the pipe 31d is opened, and the second end valve 42 is closed, and the valve manifold box of the pipe 31d is connected to the pipe 31d. 30) Purge gas is injected through the side end. According to one embodiment, in the purge gas injection step (S10), the control unit 400 opens the purge gas injection line 210 and the suction line 311 is closed so that the purge gas injection valve 220 and the suction line valve 312 ) Control. Therefore, the nitrogen gas stored in the nitrogen storage container 60 is injected into the pipe 31d through the connection line 100, and the inflow of nitrogen gas into the suction pump 310 is blocked.

이 후, 본 실시 예의 가스 제거 방법에 의한 가스 제거가 완료되기까지 제 1 단부 밸브(41)는 열린 상태를 유지하고, 제 2 단부 밸브(42)는 닫힌 상태를 유지한다. 퍼지 가스 주입 단계(S10)에서 배관(31d) 내부로 퍼지 가스를 주입함으로써 배기 단계(S20) 전에 가스의 농도를 낮춘다.Thereafter, the first end valve 41 remains open and the second end valve 42 remains closed until gas removal by the gas removal method of the present embodiment is completed. In the purge gas injection step (S10), the concentration of the gas is lowered before the exhaust step (S20) by injecting the purge gas into the pipe 31d.

배기 단계(S20)는 퍼지 가스 주입 단계(S10) 이후에 수행된다. 배기 단계(S20)에서는 밸브 매니폴드 박스(30) 측 단부를 통해 배관(31d) 내의 가스를 외부로 배기한다. 일 실시 예에 따르면, 배기 단계(S20)는 흡기 단계(S21), 제 1 희석 단계(S22), 여과 단계(S23) 및 제 2 희석 단계(S24)를 포함할 수 있다. 일 실시 예에 따르면, 흡기 단계(S21) 및 배기 단계(S20)는 배관(31d) 내에 잔류하는 가스의 종류 및/또는 예상되는 농도 및 양에 따라 서로 번갈아 복수회 수행되거나 각각 1회 수행될 수 있다. The exhaust step S20 is performed after the purge gas injection step S10. In the exhausting step S20, the gas in the pipe 31d is exhausted to the outside through the end of the valve manifold box 30 side. According to one embodiment, the exhaust step (S20) may include an intake step (S21), a first dilution step (S22), a filtration step (S23) and a second dilution step (S24). According to one embodiment, the intake step (S21) and the exhaust step (S20) may be performed alternately a plurality of times or may be performed once, respectively, depending on the type and/or expected concentration and amount of gas remaining in the pipe 31d. have.

흡기 단계(S21)에서는 배관(31d) 내의 가스를 흡입한다. 일 실시 예에 따르면, 흡기 단계(S21)에서 제어부(400)는, 퍼지 가스 주입 라인(210)은 폐쇄하고 흡입 라인(311)은 개방되도록 퍼지 가스 주입 밸브(220) 및 흡입 라인 밸브(312)를 제어하고, 흡입 펌프(310)를 가동시켜 배관(31d) 내의 가스를 흡입한다. 흡입 펌프(310)에 의해 흡입된 가스는 흡입 라인(311)을 지나 여과 부재(320)로 이송된다. In the intake step S21, the gas in the pipe 31d is sucked. According to one embodiment, the control unit 400 in the intake step (S21), the purge gas injection line 210 is closed and the suction line 311 is opened so that the purge gas injection valve 220 and the suction line valve 312 Control, and operate the suction pump 310 to suck the gas in the pipe 31d. The gas sucked by the suction pump 310 passes through the suction line 311 and is transferred to the filtration member 320.

제 1 희석 단계(S22)에서는 흡기 단계(S21)에서 흡기된 가스를 희석한다. 일 실시 예에 따르면, 제 1 희석 단계(S22)에서 제어부(400)는 제 1 희석 라인(351)을 개방하도록 제 1 희석 라인 밸브(352)를 제어함으로써 질소 저장 용기(60) 내의 질소 가스를 공급하여 흡기된 가스를 희석한다. 제 1 희석 단계(S22)는 퍼지 가스 주입 단계(S10) 및 배기 단계(S20)의 초기 일정 횟수까지의 수행시에는 그 이후의 수행시에 비해 흡기된 가스의 농도가 높을 수 있으므로 이를 희석하여 여과 부재(320)에 과부하가 걸리는 것을 방지하기 위해 수행된다. 따라서, 퍼지 가스 주입 단계(S10) 및 배기 단계(S20)가 복수회 수행되는 경우, 제 1 희석 단계(S22)는 퍼지 가스 주입 단계(S10) 및 배기 단계(S20)의 최초 수행시부터 일정 수행 횟수동안 수행되고, 이 후에는 수행되지 않을 수 있다. In the first dilution step (S22), the gas sucked in the intake step (S21) is diluted. According to one embodiment, in the first dilution step (S22), the control unit 400 controls the first dilution line valve 352 to open the first dilution line 351 to remove nitrogen gas in the nitrogen storage container 60. Dilute the aspirated gas by supplying it. In the first dilution step (S22), the concentration of the inhaled gas may be higher than that of the subsequent execution when the purge gas injection step (S10) and the exhaust step (S20) are performed up to a predetermined number of times. It is performed to prevent the member 320 from being overloaded. Therefore, when the purge gas injection step (S10) and the exhaust step (S20) is performed a plurality of times, the first dilution step (S22) is performed a certain period from the initial execution of the purge gas injection step (S10) and the exhaust step (S20) It may be performed for a number of times, after which it may not.

예를 들면, 제 1 희석 단계(S22)는 퍼지 가스 주입 단계(S10) 및 배기 단계(S20)의 최초 수행 및 2회 수행시에는 수행되나 3회 수행시 이후에는 수행되지 않을 수 있다. 이와 달리, 퍼지 가스 주입 단계(S10) 및 배기 단계(S20)가 1회만 수행되는 경우, 제 1 희석 단계(S22)는 배관(31d)내에 잔류하는 가스의 종류 및/또는 예상되는 농도 및 양에 따라 선택적으로 수행 여부가 결정될 수 있다.For example, the first dilution step (S22) may be performed during the first and second times of the purge gas injection step (S10) and the exhaust step (S20), but may not be performed after the third time. Alternatively, when the purge gas injection step (S10) and the exhaust step (S20) are performed only once, the first dilution step (S22) is based on the type and/or the expected concentration and amount of gas remaining in the pipe 31d. Accordingly, whether or not to selectively perform may be determined.

여과 단계(S23)에서는 흡기 단계(S21)에서 흡입된 가스를 여과한다. 일 실시 예에 따르면, 흡기 단계(S21)에서 흡기된 가스는 캐니스터(321)를 지나면서 흡착제(322)에 의해 여과된다. In the filtration step S23, the gas sucked in the intake step S21 is filtered. According to one embodiment, the gas sucked in the intake step (S21) is filtered by the adsorbent 322 while passing through the canister 321.

일 실시 예에 따르면, 여과 단계(S23)에서 온도 감지 부재(323)는 흡착제(322)의 온도를 측정한다. 측정된 흡착제(322)의 온도가 일정 온도값 이상에 도달하는 경우, 제어부(400)는 알람을 발생시키도록 알람 부재(340)를 제어하고, 모든 밸브를 폐쇄되도록 제어하고, 흡입 펌프(310) 및 보조 펌프(370)를 가동 중지 시킬 수 있다. 따라서, 작업자는 흡착제(322)의 과부하에 대해 인식할 수 있고, 흡착제(322)의 과부하에 의한 장치의 손상 및 완전히 여과되지 않은 가스가 외부로 배출되는 것을 방지할 수 있다.According to one embodiment, in the filtration step (S23), the temperature sensing member 323 measures the temperature of the adsorbent 322. When the measured temperature of the adsorbent 322 reaches a predetermined temperature or higher, the control unit 400 controls the alarm member 340 to generate an alarm, controls all valves to be closed, and the suction pump 310 And the auxiliary pump 370. Accordingly, the operator can recognize the overload of the adsorbent 322, and can prevent damage to the device due to the overload of the adsorbent 322 and discharge of completely unfiltered gas to the outside.

또한, 일 실시 예에 따르면, 가스 농도 측정 부재(330)는 여과 부재(320)에 의해 여과 되기 전의 가스의 농도 및/또는 여과 부재(320)에 의해 여과된 후의 가스의 농도를 측정할 수 있다. 예를 들면, 가스 농도 측정 부재(330)는 퍼지 가스 주입 단계(S10) 및 배기 단계(S20)가 기 설정된 수만큼 수행된 후, 여과 부재(320)에 의해 여과 되기 전의 가스의 농도 및/또는 여과 부재(320)에 의해 여과된 후의 가스의 농도를 측정할 수 있다. 이 경우, 퍼지 가스 주입 단계(S10) 및 배기 단계(S20)의 해당 수행 횟수에서 예측되는 가스 농도에 비해 가스 농도 측정 부재(330)에 의해 측정된 가스 농도가 일정값 이상 높게 측정되는 경우, 제어부(400)는 제어부(400)는 알람을 발생시키도록 알람 부재(340)를 제어하고, 모든 밸브를 폐쇄되도록 제어하고, 흡입 펌프(310) 및 보조 펌프(370)를 가동 중지 시킬 수 있다. In addition, according to an embodiment, the gas concentration measuring member 330 may measure the concentration of the gas before being filtered by the filtering member 320 and/or the concentration of the gas after being filtered by the filtering member 320. . For example, the gas concentration measuring member 330 after the purge gas injection step (S10) and the exhaust step (S20) is performed a predetermined number, the concentration of the gas before being filtered by the filtering member 320 and / or The concentration of gas after being filtered by the filtration member 320 can be measured. In this case, when the gas concentration measured by the gas concentration measuring member 330 is higher than a predetermined value compared to the gas concentration predicted at the corresponding number of executions of the purge gas injection step (S10) and the exhaust step (S20), the control unit The control unit 400 may control the alarm member 340 to generate an alarm, control all valves to be closed, and stop the suction pump 310 and the auxiliary pump 370.

따라서, 작업자는 흡착제(322)의 과부하에 대해 인식할 수 있고, 흡착제(322)의 과부하에 의한 장치의 손상 및 완전히 여과되지 않은 가스가 외부로 배출되는 것을 방지할 수 있다. Accordingly, the operator can recognize the overload of the adsorbent 322, and can prevent damage to the device due to the overload of the adsorbent 322 and discharge of completely unfiltered gas to the outside.

또한, 가스 농도 측정 부재(330)에 의해 측정된 여과 부재(320)에 의해 여과 되기 전의 가스의 농도 및 여과 부재(320)에 의해 여과된 후의 가스의 농도를 비교하여 흡착제(322)의 성능을 모니터링하여 교체 여부를 판단할 수 있다. 이와 달리, 가스 제거 장치(10)의 외벽 및 캐니스터(321)의 흡착제(322)에 대응되는 일부 영역은 투명한 재질로 제공되어, 작업자는 흡착제(322)의 색을 시각적으로 관찰하여 흡착제(322)의 성능 및 교체 여부를 예측할 수 있다.In addition, the performance of the adsorbent 322 is compared by comparing the concentration of the gas before being filtered by the filtering member 320 measured by the gas concentration measuring member 330 and the concentration of the gas after being filtered by the filtering member 320. Monitoring can be used to determine replacement. Alternatively, the outer wall of the gas removal device 10 and some areas corresponding to the adsorbent 322 of the canister 321 are provided with a transparent material, so that the operator visually observes the color of the adsorbent 322 to adsorb the adsorbent 322 Can predict the performance and replacement.

제 2 희석 단계(S24)에서는 여과 단계(S23)에서 여과된 가스를 희석한다. 일 실시 예에 따르면, 제 2 희석 단계(S24)에서 제어부(400)는 제 2 희석 라인(361)을 개방하도록 제 2 희석 라인 밸브(362)를 제어함으로써 질소 저장 용기(60) 내의 질소 가스를 공급하여 여과된 가스를 희석한다. 제 2 희석 단계(S24)는 선택적으로 수행된다. 예를 들면, 가스 농도 측정 부재(330)에 의해 측정된 여과 후의 가스의 농도가 일정 값 이하인 경우, 제어부(400)는 제 2 희석 단계(S24)가 수행되지 않도록 제 2 희석 라인 밸브(362)를 제어할 수 있다. In the second dilution step (S24), the filtered gas is diluted in the filtration step (S23). According to one embodiment, in the second dilution step (S24), the control unit 400 controls the second dilution line valve 362 to open the second dilution line 361 to release nitrogen gas in the nitrogen storage container 60. Dilute the filtered gas by feeding. The second dilution step (S24) is selectively performed. For example, when the concentration of the gas after filtration measured by the gas concentration measuring member 330 is equal to or less than a certain value, the control unit 400 prevents the second dilution step (S24) from being performed by the second dilution line valve 362 Can be controlled.

여과 단계(S23)가 완료되거나, 여과 단계(S23) 및 제 2 희석 단계(S24)가 완료된 가스는 배출 라인(380)을 통해 외부로 배출된다. 예를 들면, 배출 라인(380)은 기판 처리 장치(20) 내의 가스가 배기되는 덕트에 연결되고, 여과 단계(S23)가 완료되거나, 여과 단계(S23) 및 제 2 희석 단계(S24)가 완료된 가스는 배출 라인(380)을 통해 상기 덕트로 배출될 수 있다. The filtration step (S23) is completed, or the filtration step (S23) and the second dilution step (S24) is completed gas is discharged to the outside through the discharge line (380). For example, the discharge line 380 is connected to a duct through which gas in the substrate processing apparatus 20 is exhausted, the filtration step (S23) is completed, or the filtration step (S23) and the second dilution step (S24) are completed. Gas may be discharged to the duct through the discharge line 380.

상술한 바와 같이 본 발명의 실시 예에 따른 가스 제거 장치 및 방법은 밸브 매니폴드 박스(30)의 배관(31d)의 기판 처리 장치(20) 측 단부가 아닌 밸브 매니폴드 박스(30) 측 단부로부터 가스를 제거함으로써 기판 처리 장치(20)의 가동 중에 밸브 매니폴드 박스(30)의 배관(31d)에 잔류하는 가스를 제거할 수 있다. 따라서, 기판 처리 장치(20)의 가동 중단으로 인한 생산성 저하를 방지할 수 있고, 기판 처리 장치(20)의 재가동 준비를 위한 비용을 절감할 수 있다.As described above, the gas removal apparatus and method according to the embodiment of the present invention are from the valve manifold box 30 end, not the end of the substrate processing apparatus 20 of the piping 31d of the valve manifold box 30. By removing the gas, it is possible to remove the gas remaining in the piping 31d of the valve manifold box 30 during operation of the substrate processing apparatus 20. Therefore, it is possible to prevent a decrease in productivity due to the shutdown of the substrate processing apparatus 20, and to reduce the cost for preparing the restart of the substrate processing apparatus 20.

상술한 내용은 본 발명을 실시하기 위한 구체적인 실시 예들이다. 본 발명은 상술한 실시 예들 이외에도, 단순하게 설계 변경되거나 용이하게 변경할 수 있는 실시 예들도 포함할 것이다. 또한, 본 발명은 실시 예들을 이용하여 용이하게 변형하여 실시할 수 있는 기술들도 포함될 것이다. 따라서, 본 발명의 범위는 상술한 실시 예들에 국한되어 정해져서는 안되며, 후술하는 특허청구범위뿐만 아니라 이 발명의 특허청구범위와 균등한 것들에 의해 정해져야 할 것이다.The above are specific embodiments for carrying out the present invention. In addition to the above-described embodiments, the present invention will also include embodiments that can be simply designed or easily changed. In addition, the present invention will also include techniques that can be easily modified and implemented using embodiments. Therefore, the scope of the present invention should not be limited to the above-described embodiments, and should be determined not only by the claims to be described later but also by the claims and equivalents of the present invention.

Claims (6)

기판 처리 장치;A substrate processing apparatus; 상기 기판 처리 장치에 공급되는 가스를 저장하기 위한 저장 용기;A storage container for storing gas supplied to the substrate processing apparatus; 상기 기판 처리 장치와 복수의 배관으로 연결되고, 상기 저장 용기에 저장된 서로 다른 종류의 가스를 각각의 배관을 통해 상기 기판 처리 장치로 분배하는 밸브 매니폴드 박스; 및A valve manifold box which is connected to the substrate processing apparatus by a plurality of pipes and distributes different types of gases stored in the storage container to the substrate processing apparatus through respective pipes; And 상기 밸브 매니폴드 박스 내의 배관 중에서 적어도 하나와 연결되고, 상기 연결된 배관에 잔류하는 가스를 제거하기 위한 가스 제거 장치를 포함하되,It is connected to at least one of the pipes in the valve manifold box, and includes a gas removal device for removing gas remaining in the connected pipes, 상기 가스 제거 장치는The degassing device 상기 밸브 매니폴드 박스 내의 상기 연결된 배관과 연결되는 연결 라인;A connection line connected to the connected piping in the valve manifold box; 상기 연결 라인을 통해 상기 연결된 배관으로 퍼지 가스를 주입하는 퍼지 가스 주입부;A purge gas injection unit for injecting purge gas into the connected pipe through the connection line; 상기 연결 라인을 통해 상기 연결된 배관 내의 가스를 외부로 배기하는 배기부; 및An exhaust unit for exhausting gas in the connected pipe to the outside through the connection line; And 상기 연결 라인을 통해 상기 연결된 배관으로 퍼지 가스를 주입한 후 상기 연결된 배관 내의 가스를 배기하도록 상기 퍼지 가스 주입부 및 상기 배기부를 제어하는 제어부를 포함하는 가스 제거 시스템.And a control unit controlling the purge gas injection unit and the exhaust unit to exhaust gas in the connected pipe after injecting purge gas into the connected pipe through the connection line. 제 1 항에 있어서,According to claim 1, 상기 배기부는, The exhaust portion, 상기 연결된 배관 내의 가스를 흡입하는 흡입 펌프; 및A suction pump that sucks gas in the connected pipe; And 상기 흡입 펌프에 의해 흡입된 가스를 여과하는 여과 부재를 포함하는 가스 제거 시스템.A gas removal system comprising a filtration member that filters the gas sucked by the suction pump. 제 2 항에 있어서,According to claim 2, 상기 배기부는, The exhaust portion, 상기 흡입 펌프에 의해 흡입된 가스가 외부로 배기되기 전에 상기 가스의 농도를 측정하는 가스 농도 측정 부재; 및A gas concentration measuring member that measures the concentration of the gas before the gas sucked by the suction pump is exhausted to the outside; And 알람을 발생시키는 알람 부재를 더 포함하되,Further comprising an alarm for generating an alarm, 상기 제어부는 상기 가스 농도 측정 부재에 의해 측정된 상기 농도가 기 설정된 농도값 이상인 경우 알람을 발생시키도록 상기 알람 부재를 제어하는 가스 제거 시스템.The control unit is a gas removal system for controlling the alarm member to generate an alarm when the concentration measured by the gas concentration measuring member is greater than or equal to a preset concentration value. 제 1 항에 있어서,According to claim 1, 상기 제어부는 상기 퍼지 가스 주입 및 상기 배기를 번갈아 복수회 반복하도록 상기 퍼지 가스 주입부 및 상기 배기부를 제어하는 가스 제거 시스템.The control unit is a gas removal system for controlling the purge gas injection unit and the exhaust unit to repeat the purge gas injection and the exhaust multiple times alternately. 저장 용기에 저장된 서로 다른 종류의 가스를 각각의 배관을 통해 분배하는 밸브 매니폴드 박스와 연결되고, 상기 밸브 매니폴드 박스와 연결된 배관에 잔류하는 가스를 제거하기 위한 가스 제거 장치에 있어서,In the gas removal device for removing the gas remaining in the piping connected to the valve manifold box, which is connected to the valve manifold box for dispensing different types of gas stored in the storage container through each pipe, 상기 밸브 매니폴드 박스 내의 상기 연결된 배관과 연결되는 연결 라인;A connection line connected to the connected piping in the valve manifold box; 상기 연결 라인을 통해 상기 연결된 배관으로 퍼지 가스를 주입하는 퍼지 가스 주입부;A purge gas injection unit for injecting purge gas into the connected pipe through the connection line; 상기 연결 라인을 통해 상기 연결된 배관 내의 가스를 외부로 배기하는 배기부; 및An exhaust unit for exhausting gas in the connected pipe to the outside through the connection line; And 상기 연결 라인을 통해 상기 연결된 배관으로 퍼지 가스를 주입한 후 상기 연결된 배관 내의 가스를 배기하도록 상기 퍼지 가스 주입부 및 상기 배기부를 제어하는 제어부를 포함하는 가스 제거 장치.And a control unit controlling the purge gas injection unit and the exhaust unit to exhaust the gas in the connected pipe after injecting purge gas into the connected pipe through the connection line. 제 5 항에 있어서,The method of claim 5, 상기 배기부는, The exhaust portion, 상기 연결된 배관 내의 가스를 흡입하는 흡입 펌프;A suction pump that sucks gas in the connected pipe; 상기 흡입 펌프에 의해 흡입된 가스를 여과하는 여과 부재;A filtration member that filters the gas sucked by the suction pump; 상기 흡입 펌프에 의해 흡입된 가스가 외부로 배기되기 전에 상기 가스의 농도를 측정하는 가스 농도 측정 부재; 및A gas concentration measuring member that measures the concentration of the gas before the gas sucked by the suction pump is exhausted to the outside; And 알람을 발생시키는 알람 부재를 더 포함하되,Further comprising an alarm for generating an alarm, 상기 제어부는 상기 가스 농도 측정 부재에 의해 측정된 상기 농도가 기 설정된 농도값 이상인 경우 알람을 발생시키도록 상기 알람 부재를 제어하는 가스 제거 장치.The control unit is a gas removal device for controlling the alarm member to generate an alarm when the concentration measured by the gas concentration measuring member is greater than or equal to a preset concentration value.
PCT/KR2020/000200 2019-01-04 2020-01-06 Gas removing apparatus and method Ceased WO2020141960A1 (en)

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KR101974647B1 (en) * 2019-01-04 2019-05-02 조수민 Apparatus and method for removing gas
KR102325324B1 (en) * 2020-07-30 2021-11-11 (주) 리더스앤글로벌 Residual process gas exhaust apparatus and method for exhausting residual process gas using the same
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980069172A (en) * 1997-02-27 1998-10-26 김광호 Residual gas exhaust method of gas supply system
WO2001005487A1 (en) * 1999-07-16 2001-01-25 Advanced Technology Materials, Inc. Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels
KR20010049497A (en) * 1999-06-08 2001-06-15 쉬에르 피에르 Method and device for filling a distribution line with corrosive gas
KR101077451B1 (en) * 2002-06-10 2011-10-26 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Pressure-based gas delivery system and method for reducing risks associated with storage and delivery of high pressure gases
KR20160068008A (en) * 2014-12-04 2016-06-15 (주)케이코아 Apparatus for measuring leak of gas
KR101974647B1 (en) * 2019-01-04 2019-05-02 조수민 Apparatus and method for removing gas

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980069172A (en) * 1997-02-27 1998-10-26 김광호 Residual gas exhaust method of gas supply system
KR20010049497A (en) * 1999-06-08 2001-06-15 쉬에르 피에르 Method and device for filling a distribution line with corrosive gas
WO2001005487A1 (en) * 1999-07-16 2001-01-25 Advanced Technology Materials, Inc. Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels
KR101077451B1 (en) * 2002-06-10 2011-10-26 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Pressure-based gas delivery system and method for reducing risks associated with storage and delivery of high pressure gases
KR20160068008A (en) * 2014-12-04 2016-06-15 (주)케이코아 Apparatus for measuring leak of gas
KR101974647B1 (en) * 2019-01-04 2019-05-02 조수민 Apparatus and method for removing gas

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