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WO2020021722A1 - Procédé de fabrication de dispositif d'affichage - Google Patents

Procédé de fabrication de dispositif d'affichage Download PDF

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Publication number
WO2020021722A1
WO2020021722A1 PCT/JP2018/028333 JP2018028333W WO2020021722A1 WO 2020021722 A1 WO2020021722 A1 WO 2020021722A1 JP 2018028333 W JP2018028333 W JP 2018028333W WO 2020021722 A1 WO2020021722 A1 WO 2020021722A1
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WO
WIPO (PCT)
Prior art keywords
mask
deposition
layer
vapor deposition
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/028333
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English (en)
Japanese (ja)
Inventor
勇毅 小林
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Sharp Corp
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Sharp Corp
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Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to PCT/JP2018/028333 priority Critical patent/WO2020021722A1/fr
Publication of WO2020021722A1 publication Critical patent/WO2020021722A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Definitions

  • the present invention relates to a method for manufacturing a display device.
  • organic EL Electro Luminescence
  • a separate deposition method is often used in order to form a deposition film including a high-definition light emitting layer on a substrate.
  • a red light emitting layer is formed on a substrate using a red light emitting layer forming separate deposition mask, and then the red light emitting layer forming separate deposition mask is used.
  • the green light emitting layer forming separate coating vapor deposition mask is used.
  • the non-deposited hole portion of the separate deposition mask for forming the green light emitting layer directly contacts the red light emitting layer on the substrate.
  • the coating mask for forming the green light emitting layer is separated from the substrate, a defect occurs in the red light emitting layer.
  • FIG. 21 shows that the edge covers 108a and 108b having different heights are formed in the same active matrix substrate 100, and the active matrix substrate 100 and the separate deposition mask 101 are completely separated by the high edge cover 108b.
  • FIG. 7 is a diagram for explaining a case where the sheet does not adhere to the sheet.
  • a high edge cover 108b is provided on a surface of the active matrix substrate 100 which faces the separate deposition mask 101, and the edge cover 108b In addition, a certain distance can be maintained so that the active matrix substrate 100 and the separately-applied deposition mask 101 do not completely adhere to each other.
  • the deposition particles emitted from the deposition source pass through the deposition holes 103 of the mask 101 for separate deposition. Through this, the active matrix substrate 100 is formed in a predetermined shape.
  • FIG. 21B is a diagram showing a schematic configuration of the active matrix substrate 100.
  • the active matrix substrate 100 has a configuration in which a TFT element 105, an interlayer insulating film 106 serving as a planarizing film, an electrode 107, and edge covers 108a and 108b are provided on a substrate 104. Has become.
  • the original role of the edge covers 108a and 108b (also referred to as banks) is that a thin deposited film such as a light emitting layer is formed at the end of the electrode 107, and short-circuits between the electrode 107 and an opposing electrode (not shown). In order to prevent this, the electrode 107 is formed so as to cover the end of the electrode 107.
  • the height of the edge covers 108a and 108b is more than a predetermined height in consideration of forming a common layer (for example, an electrode layer facing the electrode 107) in a later step. It is difficult.
  • the edge cover formed at the boundary of the active area where the plurality of electrodes 107 are regularly formed is the high edge cover 108b (2 ⁇ m in height),
  • the edge cover to be formed was an edge cover 108a having a low height (1 ⁇ m in height).
  • the active matrix substrate 100 When vapor deposition is performed using the color-separated deposition method, the active matrix substrate 100 is used, and the edge cover 108b allows the active matrix substrate 100 and the color-separated deposition mask 101 to have a predetermined distance so as not to be completely adhered to each other. Therefore, it is possible to suppress the occurrence of defects in the light-emitting layer or the like, which is a deposition film, when the separate deposition mask 101 is separated from the active matrix substrate 100.
  • FIG. 22 is a diagram showing a schematic configuration of a conventional mask 201 for separate coating deposition.
  • the mask 201 for separate deposition is composed of a mask body 202 and a frame 203.
  • a surface facing a substrate on which a deposition film is formed is provided in the mask body 202.
  • Convex portions 205 are formed between vapor deposition holes 204 that are vertically adjacent in the drawing.
  • the separate deposition mask 201 When vapor deposition is performed using the separate deposition method, by using the separate deposition mask 201, the separate deposition mask 201 and the substrate on which the deposition film is formed can be prevented from being completely adhered. Therefore, it is described that when the separated deposition mask 201 is separated from a substrate on which a deposition film is formed, it is possible to suppress occurrence of defects in a light emitting layer or the like which is a deposition film.
  • JP-A-2003-323980 Japanese Unexamined Patent Publication
  • the vapor deposition material attached to the high edge cover 108b of the active matrix substrate 100 may be peeled off.
  • the deposited material may become a source of contamination in a deposition chamber used in the manufacturing process. For example, it may be transferred to another mask 101 for separate deposition and float in the deposition chamber.
  • the deposition material adhered to the convex portion 205 of the mask body 202 may peel off, and the peeled deposition material becomes a source of contamination in the deposition chamber.
  • the display device may have a problem that defects such as contamination and color mixing easily occur.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a method of manufacturing a display device capable of reducing a defective product rate and improving a manufacturing yield.
  • a method for manufacturing a display device is a method for manufacturing a display device including a substrate and a vapor-deposited film formed on the substrate, and including a plurality of pixels.
  • a first step of performing a vapor deposition process by disposing a part of the vapor deposition mask and a part of the substrate so as to be in contact with each other to form the vapor deposition film on the substrate; and
  • a third step to be performed.
  • a defective product rate can be reduced and a manufacturing yield can be improved.
  • FIG. 5 is a flowchart illustrating an example of a method for manufacturing a display device.
  • FIG. 3 is a cross-sectional view illustrating a configuration of a display area of the display device.
  • 2 is a flowchart illustrating an example of a process for forming the light emitting device illustrated in FIG. 1.
  • FIG. 2 is a schematic plan view showing an example of the arrangement of a red light emitting element, a green light emitting element, and a blue light emitting element constituting a display device manufactured by the manufacturing method according to one embodiment of the present invention.
  • FIG. 5 is a cross-sectional view taken along the line AA of FIG. 4, illustrating an example of a stacked structure of the EL layer illustrated in FIG.
  • FIG. 8 is a plan view illustrating an example of a schematic configuration of a mask sheet for a blue light emitting layer illustrated in FIG. 7.
  • 10A is a plan view of the effective portion YA of the mask sheet 80 as viewed from the first surface 80a side (upper surface), and
  • FIG. 10B is a cross-sectional view taken along the line AA of FIG. 7 is a flowchart illustrating an example of a more detailed flow of the film forming step and the cleaning step illustrated in FIG. 6.
  • FIG. 12 is a plan view schematically illustrating the superimposed portion illustrated in FIG. It is a schematic plan view showing an example of arrangement of a red light emitting element, a green light emitting element, and a blue light emitting element which constitute a display device manufactured by a manufacturing method according to another embodiment of the present invention.
  • FIG. 14 is a plan view illustrating a schematic configuration of an effective portion of a mask sheet stretched over a coating mask for red light-emitting layer in the arrangement example illustrated in FIG. 13.
  • FIG. 14 is a plan view illustrating a schematic configuration of an effective portion of a mask sheet stretched over a separate deposition mask for a green light emitting layer in the arrangement example illustrated in FIG. 13.
  • FIG. 14 is a plan view illustrating a schematic configuration of an effective portion of a mask sheet stretched over a separately-applied vapor deposition mask for a blue light emitting layer in the arrangement example illustrated in FIG. 13.
  • It is a schematic sectional drawing which shows the (a) vapor deposition process and the (b) detachment process about the coating mask for blue light emission layer which concerns on the said another one Embodiment of this invention. It is the top view which modeled the convex part shown to FIG.17 (b).
  • FIG. 6 is a schematic cross-sectional view illustrating a step of forming a blue hole transport layer in a manufacturing method according to another embodiment of the present invention.
  • FIG. 6 is a schematic cross-sectional view illustrating a step of forming a blue hole transport layer in a manufacturing method according to another embodiment of the present invention. It is a figure for explaining the case where the conventional active matrix substrate provided with the edge cover from which height differs, and the conventional mask for separate application vapor deposition do not adhere completely. It is a figure showing the schematic structure of the conventional mask for separate application deposition.
  • the same layer means being formed by the same process (film formation step), and “lower layer” is being formed by a process earlier than the layer to be compared. And “upper layer” means that it is formed in a process subsequent to the layer to be compared.
  • FIG. 1 is a flowchart showing an example of a method for manufacturing a display device.
  • FIG. 2 is a cross-sectional view illustrating a configuration of a display area of the display device 1.
  • FIG. 3 is a flowchart showing an example of step S4 shown in FIG.
  • a resin layer 12 is formed on a light-transmitting support substrate (for example, mother glass) (Step S1).
  • the barrier layer 3 is formed (Step S2).
  • the TFT layer 4 is formed (Step S3).
  • a top emission type light emitting element layer 5 is formed (Step S4).
  • the sealing layer 6 is formed (Step S5).
  • an upper surface film is attached on the sealing layer 6 (Step S6).
  • Step S7 the support substrate is separated from the resin layer 12 by laser light irradiation or the like (Step S7).
  • the lower surface film 10 is attached to the lower surface of the resin layer 12 (Step S8).
  • the laminate including the lower film 10, the resin layer 12, the barrier layer 3, the TFT layer 4, the light emitting element layer 5, and the sealing layer 6 is divided to obtain a plurality of pieces (Step S9).
  • the functional film 39 is attached to the obtained individual pieces (Step S10).
  • an electronic circuit board for example, an IC chip and an FPC
  • Step S11 is performed by a display device manufacturing apparatus (including a film forming apparatus that performs each step of steps S1 to S5).
  • step S4 first, a contact hole for electrically connecting to the source electrode or the drain electrode of the transistor is formed in the flattening film 21 (step S21).
  • the anode 22 is formed in an island shape for each formation region of the light emitting element ES so as to be electrically connected to the source electrode or the drain electrode of the transistor through the contact hole (Step S22).
  • the edge cover 23 is formed (Step S23).
  • the EL layer 24 is formed (Step S24).
  • the cathode 25 is formed.
  • the resin layer 12 for example, polyimide or the like can be used.
  • the resin layer 12 may be replaced with a two-layer resin film (for example, a polyimide film) and an inorganic insulating film sandwiched between them.
  • the barrier layer 3 is a layer that prevents foreign substances such as water and oxygen from entering the TFT layer 4 and the light emitting element layer 5.
  • a silicon oxide film, a silicon nitride film, or an oxynitride film formed by a CVD method It can be composed of a silicon film or a laminated film of these.
  • the TFT layer 4 includes a semiconductor film 15, an inorganic insulating film 16 (gate insulating film) above the semiconductor film 15, a gate electrode GE and a gate wiring GH, and a gate electrode GE above the inorganic insulating film 16.
  • a planarizing film 21 (interlayer insulating film) above the source wiring SH.
  • the semiconductor film 15 is made of, for example, low-temperature polysilicon (LTPS) or an oxide semiconductor (for example, an In—Ga—Zn—O-based semiconductor), and a transistor (TFT) is formed to include the semiconductor film 15 and the gate electrode GE. Is done.
  • the transistor is illustrated as having a top-gate structure, but may have a bottom-gate structure.
  • the gate electrode GE, the gate wiring GH, the capacitor electrode CE, and the source wiring SH are formed of, for example, a single-layer film or a stacked film of a metal containing at least one of aluminum, tungsten, molybdenum, tantalum, chromium, titanium, and copper. You.
  • the TFT layer 4 in FIG. 2 includes one semiconductor layer and three metal layers.
  • the inorganic insulating films 16, 18, and 20 can be composed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a stacked film of these films formed by a CVD method.
  • the flattening film 21 can be made of a coatable organic material such as polyimide or acrylic.
  • the light emitting element layer 5 includes an anode 22 above the planarizing film 21, an insulating edge cover 23 covering the edge of the anode 22, an EL (electroluminescence) layer 24 above the edge cover 23, and an EL layer 24 and a cathode 25 above.
  • the edge cover 23 is formed, for example, by applying an organic material such as polyimide or acrylic and then patterning by photolithography.
  • a light emitting element ES for example, OLED: organic light emitting diode, QLED: quantum dot diode
  • a light emitting element ES including an island-shaped anode 22, EL layer 24, and cathode 25 is formed in the light emitting element layer 5, and the light emitting element ES Is formed in the TFT layer 4.
  • the EL layer 24 is formed by, for example, stacking a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in this order from the lower layer side.
  • the light emitting layer is formed in an island shape at the opening (for each sub-pixel) of the edge cover 23 by a vapor deposition method or an inkjet method.
  • Other layers are formed in an island shape or a solid shape (common layer). Further, a configuration in which one or more of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer are not formed is also possible.
  • an FMM fine metal mask
  • the FMM is a sheet having a large number of evaporation holes (for example, made of Invar material), and an island-like light-emitting layer (corresponding to one sub-pixel) is formed by an organic substance passing through one evaporation hole.
  • the light emitting layer of the QLED can form an island-shaped light emitting layer (corresponding to one sub-pixel), for example, by inkjet coating a solvent in which quantum dots are diffused.
  • the anode (anode) 22 is made of, for example, a laminate of ITO (Indium Tin Oxide) and Ag (silver) or an alloy containing Ag, and has light reflectivity.
  • the cathode (cathode) 25 can be made of a light-transmitting conductive material such as an MgAg alloy (extremely thin film), ITO, or IZO (Indium Zinc Oxide).
  • the light emitting element ES is an OLED
  • holes and electrons are recombined in the light emitting layer due to a driving current between the anode 22 and the cathode 25, and light is emitted in a process in which the generated excitons transition to the ground state.
  • the cathode 25 is translucent and the anode 22 is light-reflective, the light emitted from the EL layer 24 is directed upward, resulting in top emission.
  • the light emitting device ES is a QLED
  • holes and electrons are recombined in the light emitting layer due to the driving current between the anode 22 and the cathode 25, and the excitons generated by the recombination generate conduction band levels of the quantum dots.
  • Light (fluorescence) is emitted in the process of transitioning from to the valence band (valence band).
  • a light emitting element (such as an inorganic light emitting diode) other than the OLED and QLED may be formed in the light emitting element layer 5.
  • the sealing layer 6 is translucent, and covers an inorganic sealing film 26 covering the cathode 25, an organic buffer film 27 above the inorganic sealing film 26, and an inorganic sealing film 28 above the organic buffer film 27. And The sealing layer 6 covering the light emitting element layer 5 prevents foreign substances such as water and oxygen from penetrating into the light emitting element layer 5.
  • Each of the inorganic sealing film 26 and the inorganic sealing film 28 is an inorganic insulating film, and is formed of, for example, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film formed by a CVD method, or a stacked film thereof. be able to.
  • the organic buffer film 27 is a light-transmitting organic film having a flattening effect, and can be made of an applicable organic material such as acrylic.
  • the organic buffer film 27 can be formed by, for example, ink-jet coating, but a bank for stopping droplets may be provided in the frame region.
  • the lower surface film 10 is, for example, a PET film for realizing a display device having excellent flexibility by peeling off the support substrate and attaching the lower surface film 10 to the lower surface of the resin layer 12.
  • the functional film 39 has, for example, at least one of an optical compensation function, a touch sensor function, and a protection function.
  • FIG. 4 shows a red light emitting element ES_R (subpixel), a green light emitting element ES_G (subpixel), and a blue light emitting element ES_B (subpixel) that constitute a display device (display device) manufactured by the manufacturing method according to the present embodiment. It is a schematic plan view which shows the example of arrangement
  • FIG. 5 is a cross-sectional view taken along the line AA of FIG. 4, showing an example of a laminated structure of the EL layer 24.
  • the light-emitting elements ES_R, ES_G, and ES_B of each color included in one pixel 40 have different areas, shapes, and numbers, but are not limited thereto. One or more may be the same as each other.
  • a protrusion 62 (photo spacer) as a photo spacer is provided on the edge cover 23.
  • the protrusion 62 is formed, for example, in the same layer as the edge cover 23.
  • the number of protrusions 62 for each pixel 40 may be smaller, or the number of protrusions 62 for some pixels 40 may be zero.
  • the EL layer 24 includes a hole injection layer 50 (an organic layer common to a plurality of pixels) and a common hole transport layer 51 (an organic layer common to a plurality of pixels) between the anode 22 and the cathode 25.
  • Organic layer an electron blocking layer 52, a hole blocking layer 56, an electron transport layer 58, and an electron injection layer 59 may be formed in this order. Note that this stacking order is the stacking order when the anode 22 is lower than the cathode 25, and the stacking order is reversed when the anode 22 is higher than the cathode 25.
  • a red hole transport layer 51R (evaporated film) is formed between the common hole transport layer 51 and the electron blocking layer 52, and the electron blocking layer 52 and the hole blocking layer 56 are formed.
  • the red light-emitting layer 54R (vapor-deposited film) is formed between the two.
  • a green hole transport layer 51G (evaporated film) is formed between the common hole transport layer 51 and the electron blocking layer 52.
  • a green light-emitting layer 54G (evaporated film) is formed therebetween.
  • a blue hole transport layer 51B (evaporated film) is formed between the common hole transport layer 51 and the electron blocking layer 52, and the electron blocking layer 52 and the hole blocking layer 56 are formed.
  • a blue light-emitting layer 54B (vapor-deposited film) is formed between them.
  • the layer 58 and the electron injection layer 59 are organic layers made of an organic material.
  • the EL layer 24 is not limited to the example of the laminated structure shown in FIG. 5, and a desired laminated structure can be adopted according to required characteristics of the EL layer.
  • the EL layer 24 may be provided with, for example, a hole injection layer / hole transport layer in which the common hole transport layer and the hole injection layer are integrated; one of the common hole transport layer and the hole injection layer Or both may not be provided; one or more of the blue hole transport layer, the red hole transport layer, and the green hole transport layer may not be provided; and the electron blocking layer may not be provided. Is also good.
  • the EL layer 24 may be provided with, for example, an electron injection layer and an electron transport layer in which the electron transport layer and the electron injection layer are integrated; one or both of the electron transport layer and the electron injection layer are provided. It is not necessary to provide a hole blocking layer.
  • FIG. 6 is a flowchart showing an example of the step (step S24) of forming the EL layer shown in FIG.
  • step S24 first, the hole injection layer 50 is formed on the entire display region (step S31) (fourth step). Next, the common hole transport layer 51 is formed on the entire display area (step S32) (fourth step). Next, the blue hole transport layer 51B is formed in the shape of an island using a separate deposition mask for the blue hole transport layer 51B (step S33) (first step). Next, the green hole transport layer 51G is formed in the shape of an island using a separate deposition mask for the green hole transport layer 51G (step S34) (first step). Next, the red hole transport layer 51R is formed in the shape of an island using a separate deposition mask for the red hole transport layer 51R (step S35) (first step).
  • the electron blocking layer 52 is formed on the entire display area (Step S36).
  • the red light-emitting layer 54R is formed in an island shape using the separate deposition mask for the red light-emitting layer 54R (step S37) (first step).
  • the green light-emitting layer 54G is formed in an island shape using a separate deposition mask for the green light-emitting layer 54G (step S38) (first step).
  • the blue light emitting layer 54B is formed in the shape of an island using a separate deposition mask for the blue light emitting layer 54B (step S39) (first step).
  • the hole blocking layer 56 is formed on the entire display area (Step S40).
  • the electron transport layer 58 is formed on the entire display area (step S41).
  • Step S42 the electron injection layer 59 is formed on the entire display area.
  • the deposition target substrates on which various deposition films are formed are sequentially transported from the deposition chamber where step S31 is performed to the deposition chamber where step S42 is performed. Note that the order of steps 33, S34, and S35 is interchangeable. The order of steps 37, S38, and S39 is also interchangeable.
  • step 51 The mask for once-applied deposition used once in step S33 is cleaned (step 51) (second step), and reused in step S33 (third step) performed on the next substrate to be deposited.
  • step 52 the mask for once-applied deposition that has been used once in step S34 is cleaned (step 52) (second step), and is used again in step S34 (third step) performed on the next deposition target substrate.
  • step 53 the mask for once-applied deposition that has been used once in step S35
  • step 53 second step
  • step S37 is cleaned (step 54) (second step), and is used again in step S37 (third step) performed for the next substrate to be formed.
  • step S38 is cleaned (step 55) (second step), and is used again in step S38 (third step) performed on the next substrate.
  • step 56 is cleaned (step 56) (second step), and is used again in step S39 (third step) performed on the next film formation target substrate.
  • Steps S33, S34, S35, S37, S38, and S39 are each a film forming process of forming a vapor-deposited film in an island shape on a substrate on which a film is to be formed, using a corresponding mask for separate vapor deposition.
  • Steps S51, S52, S53, S54, S55, and S56 are each a cleaning step for cleaning the corresponding coating mask for separate deposition. Each cleaning step is performed continuously to the corresponding film forming step. Further, a film forming process on the next substrate to be formed is performed continuously to a corresponding cleaning process.
  • a cleaning process is always performed after a film forming process on a certain film forming substrate and before a film forming process on the next film forming substrate.
  • ⁇ The“ substrate to be deposited ”in this specification includes a support substrate carried into a vapor deposition chamber where each deposition process is performed, and a laminated structure thereon. 5 and 6, for example, the “substrate to be deposited” in step S39 includes the support substrate 2, the resin layer 12, the TFT layer 4, the anode 22, and the edge cover 23.
  • step S39 for forming the blue light-emitting layer 54B, a separate deposition mask 70 for the blue light-emitting layer 54B, and a step for forming the blue light-emitting layer 54B The blue light-emitting layer 54B will be described by way of example, for example, step S56 of cleaning the mask 70 for separate deposition.
  • FIG. 7 is a plan view showing a schematic configuration of a separate deposition mask 70 for the blue light emitting layer 54B used in the manufacturing method according to the present embodiment.
  • the mask sheet 80 is stretched over the opening of the frame 72.
  • the number of the stretched mask sheets 80 is one, but actually, a plurality of the mask sheets 80 are stretched so as to cover the entire opening of the frame 72.
  • a plurality of support sheets 73 also referred to as a howling sheet
  • a plurality of cover sheets 71 that extend in the lateral direction of the frame 72 (the longitudinal direction of the mask sheet).
  • FIG. 8 is a plan view showing an example of a schematic configuration of the mask sheet 80 for the blue light emitting layer 54B shown in FIG.
  • FIG. 8 is a plan view showing a schematic configuration of the mask sheet 80 for the blue light emitting layer 54B shown in FIG.
  • the mask sheet 80 has a strip shape, and is made of, for example, an invar material having a thickness of 10 ⁇ m to 50 ⁇ m as a base material.
  • the first surface 80a which is the upper surface of the mask sheet 80, is the surface on the side facing the deposition target substrate
  • the second surface 80b, the lower surface of the mask sheet 80 is the surface on the side facing the deposition source in FIG. Become.
  • the mask sheet 80 includes two side ends G1 and G2 that can be gripped, and an intermediate portion M.
  • the intermediate portion M includes a plurality of effective portions YA arranged in the longitudinal direction, and an edge portion FA surrounding the effective portions YA.
  • a plurality of vapor deposition holes H are formed in the effective portion YA, and each effective portion corresponds to a display area of one OLED panel. That is, the deposition particles emitted from the deposition source pass through the deposition holes H and deposit on the display region of the deposition target substrate.
  • the edge FA overlaps a frame area surrounding the display area of the substrate, and the vapor deposition particles are blocked by the edge FA and do not reach the frame area.
  • FIG. 9A is a plan view of the effective portion YA of the mask sheet 80 as viewed from the first surface 80a side (upper surface), and FIG. 9B is an AA diagram of FIG. It is sectional drawing.
  • Each deposition hole H penetrates from the first surface 80a to the second surface 80b of the mask sheet 80, the first opening K is formed on the first surface 80a, and the second opening KK is formed on the second surface 80b. It is formed.
  • Each vapor deposition hole H has a shape in which a cross section parallel to the sheet surface increases from the first opening K of the first surface 80a toward the second surface 80b, and the first opening K on the first surface 80a side has: It is smaller than the second opening KK (lower surface etching region) on the second surface 80b side.
  • the plurality of vapor deposition holes H of the effective portion YA are formed in a matrix in the longitudinal direction and the width direction of the sheet, and the first opening K (the opening of the first surface 80a) corresponds to the formation region of the blue light emitting element ES_B.
  • the shape becomes a quadrangular shape or a circular shape with rounded corners.
  • the etching on the second surface 80b side is performed more extensively and deeper than the first surface 80a side with respect to each vapor deposition hole H, so that the shaded portion (the partition between two adjacent vapor deposition holes H) is formed. Height) is reduced, and the deposition accuracy and the deposition efficiency for the deposition target substrate are increased.
  • a recess L is formed between one of the first openings K of two adjacent vapor deposition holes H and the other of the first openings K. Is formed.
  • the concave portion means a concave portion that is concave but does not penetrate.
  • two evaporation holes H are adjacent to each other means that no other evaporation holes H are interposed between the two evaporation holes H.
  • a concave portion L is formed between the first opening K of the vapor deposition hole H at the upper right in FIG. 9 and the first opening K below it.
  • the vapor deposition holes H and the concave portions L form an opening pattern constituted by a unit pattern (first unit pattern) Uk on the first surface 10a.
  • the concave portion L is provided by etching in the gap between the openings of the vapor deposition holes H on the first surface 80a side (the concave portion L is not penetrated by etching, so it is called a half-etched portion). ), And balance the amount of etching on both sides.
  • the thin skin portion of the surface of the mask sheet 80 on which the compressive stress is applied is etched to balance the stress.
  • the shape of the concave portion L is not particularly limited, and may be various shapes.
  • a configuration can be adopted in which the contour of the concave portion L and the contour of the first opening K are similar.
  • the expression that the contour of the recess L is similar to the contour of the first opening K means that the shape of the contour of the first opening K is the same as the shape of the contour of the recess L.
  • the outline of the first opening K is elliptical
  • the outline of the recess L is also elliptical, or when the outline of the first opening K is rectangular
  • the configuration in which the outline of the concave portion L is also rectangular is included in the configuration in which the outline of the concave portion L and the outline of the first opening K are similar.
  • the size of the concave portion L and the size of the first opening portion K may be the same, or the sizes may be different from each other. , Smaller than the first opening K.
  • the outline and arrangement of the first opening K and the outline and arrangement of the recess L are not limited to the example shown in FIG.
  • FIG. 10 is a flowchart showing an example of a more detailed flow in the film forming step and the cleaning step shown in FIG.
  • the “substrate to be deposited” in step S39 includes the support substrate 2, the resin layer 12, the TFT layer 4, the anode 22, the edge cover 23, the hole injection layer 50, the common hole transport layer 51, and the blue hole. It includes a hole transport layer 51B, a green hole transport layer 51G, a red hole transport layer 51R, an electron blocking layer 52, a red light emitting layer 54R, and a green light emitting layer 54G. Then, in step S39, the blue light emitting layer 54B is formed on the film formation substrate by using a separate deposition mask for the blue light emitting layer 54B.
  • the deposition target substrate is carried into the deposition chamber where Step S39 is performed (Step S61), and then the blue color is deposited by using the separate deposition mask 70 for the blue light emitting layer 54B.
  • the light emitting layer 54B is formed in an island shape (step S60) (first step), and is carried out of the vapor deposition chamber (step S66). More specifically, in step S60, first, the mask 70 for deposition and deposition is aligned with the substrate on which the film is to be formed (step S62).
  • the separate deposition mask 70 is coated on the deposition target substrate, and the projections 62 (or the deposition film on the projections 62) provided on the deposition target substrate are deposited and deposited.
  • the mask 70 is disposed so as to face a part of the mask 70 (step S63).
  • a deposition process of depositing a deposition material through a plurality of deposition ports H provided in the mask sheet 80 of the mask 70 for separate deposition deposition is performed, so that a blue light emitting layer is formed on the deposition target substrate.
  • 54B are formed in an island shape (step S64) (vapor deposition step).
  • the coating mask 70 is separated from the deposition target substrate (step S65) (separation step).
  • FIG. 11 is a schematic cross-sectional view showing the (a) vapor deposition step and (b) detachment step shown in FIG. 10 for the mask sheet 80 of the separate vapor deposition mask 70 for the blue light emitting layer 54B according to the present embodiment. .
  • the deposition particles 76 which are particles of the deposition material, are deposited on the deposition target substrate 60 through the deposition holes H of the mask sheet 80 (Step S64), the deposition particles 76 emit blue light.
  • the blue light-emitting layer 54B is attached to the formation region of the element ES_B. Furthermore, since the vapor deposition particles 76 easily adhere to the periphery of the contact portion, the vapor deposition particles 76 form the deposit 42 on the vapor deposition hole H side in the overlapping portion 74.
  • the contact portion is in contact with the convex portion 62 (or the convex portion). This is a portion that comes into contact with the deposited film formed on the portion 62).
  • the overlapping portion 74 is a portion of the mask sheet 80 that overlaps the convex portion 62, and includes a contact portion and a periphery of the contact portion.
  • the vapor deposition particles 76 are also attached to other parts of the mask sheet 80.
  • the adhered substance 42 remains around the abutting portion of the mask sheet 80 after the coating mask 70 is separated from the deposition target substrate 60 (Step S65).
  • the deposited film (the hole injection layer 50, the common hole transport layer 51, and the electron blocking layer 52) formed on the convex portion 62 in the previous process may be transferred to the contact portion.
  • the deposits 42 and / or the transferred deposited film remaining on the overlapping portion 74 are contamination sources.
  • Other portions of the first surface 80a of the mask sheet 80 tend to be considerably lighter than the overlapping portion 74 that is soiled by the deposits 42 and / or the transferred deposited film.
  • FIG. 12 is a plan view schematically illustrating the overlapping portion 74 shown in FIG.
  • the shape of the convex portion 62 is substantially a truncated cone, and the shape of the overlapping portion 74 is substantially circular in plan view.
  • the attached matter 42 is likely to be formed in a region of the overlapping portion 74 other than the contact portion 46 of the local portion 48.
  • the contact portion 46 is a portion of the mask sheet 80 that contacts the protrusion 62.
  • a peripheral portion 47 (around the contact portion) surrounding the contact portion 46, the distance from the side surface of the convex portion 62 to the first surface 80 a of the mask sheet 80 is short, and the film formation substrate 60 is It is separated from the first surface 80a. For this reason, the attached matter 42 tends to be formed in the peripheral part 47.
  • the peripheral portion 47 does not always coincide with the region of the overlapping portion 74 except for the contact portion 46.
  • the outer circumference of the peripheral portion 47 is located inside the overlapping portion 74, and when the height of the convex portion 62 is short, the outer circumference of the peripheral portion 47 is located outside the overlapping portion 74.
  • the height of the spine of the convex portion 62 is such that the outer periphery of the peripheral portion 47 is located inside the overlapping portion 74.
  • the vapor deposition particles 76 fly from the vapor deposition hole H, the attached matter 42 tends to be formed on the vapor deposition hole H side of the contact portion 46. Due to these tendencies, the deposit 42 is likely to be formed in a region that is inside the local 48 and outside the contact portion 46.
  • the local portion 48 includes the contact portion 47 and a region of the peripheral portion 47 on the side of the deposition hole H with respect to the contact portion 47.
  • the rest of the first surface 80a of the mask sheet 80 tends to be much lighter than the local 48, which is soiled by the deposits 42 and / or the transferred deposited film. is there.
  • step S56 the coating vapor deposition mask 70 for the blue light emitting layer 54B is cleaned.
  • the mask 70 for separate coating and vapor deposition is cleaned in a step S70 performed continuously to the step S60 (second step). Then, in the step S60 (third step) performed on the next substrate to be formed, which is performed continuously to the step 70, the coating mask 70 for the separate coating after the step 70 is used again. More specifically, in step S70, the first surface 80a (facing the film-forming substrate side) of the mask sheet 80 of the deposition mask 70 is separately irradiated with laser light (S71) (fifth step). Then, the laser beam is locally applied to the local portion 48 including at least the contact portion 46 of the first surface 80a of the mask sheet 80 (S72) (removal step).
  • the process is not limited to the process illustrated in FIG. 10, and the step S60 may be any process as long as the local portion 48 can be selectively cleaned.
  • step S72 may be performed prior to step S71; step S71 may be omitted.
  • the overall surface temperature of the first surface 80a of the mask sheet 80 is set higher than the vapor deposition temperature of the vapor deposition material, and the vapor deposition material attached to the entire first surface 80a is removed. be able to.
  • the other parts of the first surface 80a tend to be considerably lighter than the local portions 48. For this reason, even if the entire surface of the mask 70 for separate coating and vapor deposition is cleaned in step S71, dirt may remain on the local portion 48 in some cases.
  • the local temperature of the local portion 48 of the mask sheet 80 is made higher than the vapor deposition temperature of the vapor deposition material by the local irradiation of the laser beam in step S72, and the deposits 42 remaining on the local portion 48 and / or the transferred vapor deposited film are removed. be able to. For this reason, the local part 48 is cleaned by step S72.
  • the deposition temperature is typically between 250 and 350 degrees Celsius. If the local part 48 is overheated, the contact part mask may be deformed. Therefore, it is preferable to irradiate the laser beam in step S72 so that the surface temperature of the local part 48 becomes 250 degrees Celsius or more and 500 degrees or less.
  • the local irradiation region (region including the local region) of the laser beam in step S72 may be a region including the local region 48 of the mask sheet 80, and may be a plurality of regions.
  • the local irradiation region may be, for example, a region where the contact portion 46 and the peripheral portion 47 are combined, or may be the overlapping portion 74.
  • the local irradiation region may be, for example, a plurality of regions having a diameter of 5 ⁇ m or more and 50 ⁇ m or less including one local 48, or one or a plurality of regions having a diameter of 10 mm or more and 100 mm or less including a plurality of locals 48. Good.
  • the local irradiation of the laser beam in step S72 may be performed simultaneously on a plurality of ranges or sequentially.
  • the description regarding the film forming step S60 and the cleaning step S70 described above can be applied to the separate deposition mask corresponding to any of the red light emitting element ES_R, the green light emitting element ES_G, and the blue light emitting element ES_B.
  • FIG. 13 is a schematic plan view showing an arrangement example of the red light emitting element ES_R, the green light emitting element ES_G, and the blue light emitting element ES_B, which constitute the display device manufactured by the manufacturing method according to the present embodiment.
  • FIG. 14 is a plan view illustrating a schematic configuration of an effective portion YA of a mask sheet 80R stretched over a separate deposition mask for the red light emitting layer 54R.
  • FIG. 15 is a plan view illustrating a schematic configuration of an effective portion YA of a mask sheet 80G stretched over a separate deposition mask for the green light emitting layer 54G.
  • FIG. 16 is a plan view illustrating a schematic configuration of an effective portion YA of a mask sheet 80B stretched over a separate deposition mask for the blue light emitting layer 54R.
  • the photo spacer is provided on the mask for separate deposition instead of being provided on the substrate on which the film is formed.
  • the convex portion 64R is provided on the mask sheet 80R for the red light emitting layer 54R
  • the convex portion 64G is provided on the mask sheet 80G for the green light emitting layer 54G
  • the convex portion 64B is provided on the mask sheet 80B for the blue light emitting layer 54R. It is provided as a photo spacer.
  • the convex portions 64R, 64G, and 64B provided on the mask sheets 80R, 80G, and 80B are formed of a material softer than the deposited film so as not to damage the deposited film formed on the deposition target substrate. And the like.
  • the light emitting elements ES_R, ES_G, and ES_B of each color have different shapes. Therefore, as shown in FIG. 14 to FIG. 16, the vapor deposition holes H provided in the mask sheets 80R, 80G, and 80B respectively corresponding to the red light emitting layer 54R, the green light emitting layer 54G, and the blue light emitting layer 54B also have different shapes. different. For this reason, the projections 64R, 64G, and 64B provided around the evaporation holes H are different in the arrangement with respect to the deposition target substrate even if the arrangement with respect to the evaporation holes H is the same. In the arrangement examples shown in FIGS.
  • four convex portions 64R, 64G, and 64B are arranged for one pixel 40, but the arrangement of the convex portions 64R, 64G, and 64B is not limited to this.
  • the number of projections 64R, 64G, and 64B for each pixel 40 may be smaller or different.
  • the number of projections 64R, 64G, and 64B with respect to some of the pixels 40 may be zero.
  • the manufacturing method according to the present embodiment is substantially the same as the manufacturing method according to the above-described first embodiment except that the photospacer is provided not on the substrate on which the film is to be formed but on the mask for separate deposition.
  • FIG. 17 is a schematic cross-sectional view showing (a) a vapor deposition step and (b) a separation step shown in FIG. 10 for a mask sheet 80B of a separate vapor deposition mask for the blue light emitting layer 54B according to the present embodiment.
  • step S63 in the aligned state, the separate deposition mask for the blue light emitting layer 54B is provided on the deposition target substrate 60 ′.
  • the convex portions 64B provided on the mask sheet 80B are arranged to face each other so as to contact a part of the substrate 60 ′.
  • step S64 in the present embodiment when the deposition particles 76, which are particles of the deposition material, are deposited on the deposition target substrate 60 ′ through the deposition holes H of the mask sheet 80B for the blue light emitting layer 54B, the deposition particles 76 become blue light emitting elements.
  • the blue light-emitting layer 54B is attached to the formation region of ES_B. Further, since the vapor deposition particles 76 easily adhere to the periphery of the contact portion, the vapor deposition particles 76 form the deposit 44 on the vapor deposition hole H side of the convex portion 64B.
  • the contact portion is a portion of the convex portion 64B that comes into contact with the film formation substrate 60 ′ when the convex portion 64B is in contact with the film formation substrate 60 ′.
  • the vapor deposition particles 76 are also attached to other parts of the mask sheet 80B.
  • the deposit 44 remains on the convex portion 64B after the separate deposition mask for the blue light emitting layer 54B is separated from the deposition target substrate 60 ′ (step S65). There is.
  • the deposited film (the hole injection layer 50 and the common hole transport layer 51) formed on the deposition target substrate 60 'in the previous process may be transferred to the contact portion of the projection 64B.
  • the deposits 44 remaining on the protrusions 64B and / or the transferred deposited film are contamination sources. Other portions of the mask sheet 80B tend to be much lighter than the protrusions 64B that are smudged by the deposit 44 and / or the transferred deposited film.
  • FIG. 18 is a plan view schematically showing the projection 64B shown in FIG. 17B in plan view.
  • the shape of the projection 64B is substantially a truncated cone.
  • the attached matter 44 is formed on the surface of the convex portion 64 ⁇ / b> B in a region other than the contact portion 46 ′ of the local 48 ′.
  • Cheap the other surfaces of the mask sheet 80B tend to be fairly lightly soiled, as compared to the locals 48 'that are smeared by the deposits 44 and / or the transferred deposited film.
  • step S72 in the present embodiment a region including the convex portion 64B is locally irradiated with laser light.
  • step S71 even if the surface of the coating vapor deposition mask 70 excluding the local portion 48 'is cleaned, dirt may remain on the local portion 48'.
  • the surface temperature of the local portion 48 'of the mask sheet 80B is set higher than the vapor deposition temperature of the vapor deposition material, and the deposits 44 remaining on the local portion 48' and / or the transferred vapor deposited film are transferred. Can be removed. For this reason, the local part 48 'is cleaned by step S72.
  • the deposition temperature is typically between 250 and 350 degrees Celsius. If the local portion 48 'is excessively heated, the convex portions 64B and / or the mask sheet 80B may be deformed.
  • the post bake temperature of the convex portion 64B is usually 500 degrees Celsius or higher. Therefore, it is preferable to irradiate the laser beam in step S72 so that the surface temperature of the local portion 48 'becomes 250 to 500 degrees Celsius.
  • the local irradiation region of the laser beam in step S72 may be a region including at least the local portion 48 'of the mask sheet 80B, and may be a plurality of regions.
  • the local irradiation region may be, for example, a region in which the contact portion 46 'and the peripheral portion 47' are combined, or a region including the entire convex portion 64B.
  • the local irradiation region may be, for example, a plurality of regions having a diameter of 5 ⁇ m or more and 50 ⁇ m or less including one local 48 ′, or one or a plurality of regions having a diameter of 10 mm or more and 100 mm or less including a plurality of locals 48 ′. You may.
  • the local irradiation of the laser beam in step S72 may be performed simultaneously on a plurality of ranges or sequentially.
  • step S 72 If the heated contact portion 46 ′ contacts the deposition target substrate 60 ′ at a high temperature in step S 72, the deposited film of the deposition target substrate 60 ′ may be thermally destroyed. For this reason, it is preferable to cool the contact part 46 'by step S63. Specifically, it is preferable to cool the surface temperature of the convex portion 64B to less than the deposition temperature at which the deposition material can be deposited as the deposition particles 76 by step S63.
  • the projections 64R, 64G, and 64B are provided on the mask sheet of the separate deposition mask corresponding to the red light emitting layer 54R, the green light emitting layer 54G, and the blue light emitting layer 54B, as in the above-described second embodiment.
  • the convex portion 66 (see FIG. 19) is provided on the mask sheet 90 of the mask for separate vapor deposition corresponding to the blue hole transport layer 51B, the green hole transport layer 51G, and the red hole transport layer 51R.
  • the manufacturing method according to the present embodiment is substantially the same as the manufacturing method according to the above-described second embodiment.
  • FIG. 19 is a schematic cross-sectional view showing step S33 of forming the blue hole transport layer 51B in the manufacturing method according to the present embodiment. 19, the detailed structure (first opening K, second opening KK, concave portion L) of the mask sheet 90 for the blue hole transport layer 51B is omitted for simplicity.
  • the convex portion 66 is formed of an organic vapor-deposited film so that the organic vapor-deposited film (the hole injection layer 50 and the common hole transport layer 51, an organic layer common to a plurality of pixels) formed on the substrate 60 ′ can be cut. It is formed of a harder material, for example, is made of metal, and is formed of the same metal material as the main body of the separate deposition mask 70 such as invar steel, or of the separate deposition mask 70 such as stainless steel. It is made of a metal material different from the main body.
  • the hole injection layer 50 and the common hole transport layer 51 are cut (ruptured) by the protrusions 66. Therefore, crosstalk between the blue light emitting element ES_B and the light emitting element adjacent thereto through the hole injection layer 50 and the common hole transport layer 51 can be prevented.
  • the hole injection layer 50 and the common hole transport layer 51 be completely separated into the inside and outside of the formation region of the blue light emitting element ES_B. Therefore, it is preferable that the protrusions 66 formed on the mask sheet 90 for the blue hole transport layer 51B have a frame shape that surrounds the evaporation holes H of the mask sheet 90 without interruption.
  • step S34 of forming the green hole transport layer 51G and step S35 of forming the red hole transport layer 51R can be prevented in step S34 of forming the green hole transport layer 51G and step S35 of forming the red hole transport layer 51R.
  • the blue light emitting element ES_B, the red light emitting element ES_R, and the green light emitting element ES_G have the hole injection layer 50 and the common hole transport layer 51 between adjacent light emitting elements broken. You may.
  • the convex portions 68 (see 20) provided on the mask sheet 92 of the mask for separate deposition corresponding to the blue hole transport layer 51B, the green hole transport layer 51G, and the red hole transport layer 51R are formed by laser. Heat by light irradiation. Except for this point, the manufacturing method according to the present embodiment is substantially the same as the manufacturing method according to the aforementioned third embodiment.
  • the convex portion 68 may be made of metal so that it can withstand heating and thermally break the organic vapor deposition film (the hole injection layer 50 and the common hole transport layer 51) formed on the deposition target substrate 60 '.
  • metal the same metal material as the main body of the separate deposition mask 70 such as Invar steel, or to be formed of a metal material different from the main body of the separate deposition mask 70 such as stainless steel.
  • FIG. 20 is a schematic cross-sectional view showing step S33 of forming the blue hole transport layer 51B in the manufacturing method according to the present embodiment. 20, the detailed structure (first opening K, second opening KK, concave portion L) of the mask sheet 92 for the blue hole transport layer 51B is omitted for simplicity.
  • the protrusions 68 formed on the mask sheet 92 for the blue hole transport layer 51B have a frame shape that surrounds the evaporation holes H of the mask sheet 92 without interruption.
  • crosstalk can be prevented in step S34 of forming the green hole transport layer 51G and step S35 of forming the red hole transport layer 51R. Note that only one or two of the blue light emitting element ES_B, the red light emitting element ES_R, and the green light emitting element ES_G have the hole injection layer 50 and the common hole transport layer 51 between adjacent light emitting elements broken. You may.
  • the convex portion 68 is heated so that the temperature is equal to or higher than the vapor deposition temperature of the vapor deposition material.
  • the deposition temperature is typically between 250 and 350 degrees Celsius. If the protrusion 68 is excessively heated, the edge cover 23 may be deformed.
  • the post-bake temperature of the edge cover 23 is usually 500 degrees Celsius or higher. Therefore, it is preferable to heat the projection 68 so that the temperature of the projection 68 is not less than 250 degrees Celsius and not more than 500 degrees Celsius, and particularly preferably about 300 degrees Celsius.
  • the heating of the protrusions 68 for breaking the hole injection layer 50 and the common hole transport layer 51 may be performed in a dedicated heating step or in step 72 (see FIG. 7).
  • a method for manufacturing a display device is a method for manufacturing a display device including a substrate and a vapor-deposited film formed on the substrate, the display device including a plurality of pixels.
  • a first step of performing a vapor deposition process by disposing a part of the vapor deposition mask and a part of the substrate so as to be in contact with each other to form the vapor deposition film on the substrate; and
  • a third step to be performed.
  • the method according to the above aspect 1, wherein the second step includes a removing step of removing the deposition material attached in the first step around the contact portion may be.
  • the region including the local portion is locally irradiated with laser light in the removing step, so that the area around the contact portion is A method of removing the deposition material attached in the first step may be used.
  • the method for manufacturing a display device according to aspect 4 of the present invention may be configured so that, in the above-described aspect 3, in the removing step, the region including the local region is a region including one local region and having a size of 5 ⁇ m or more and 50 ⁇ m or less. .
  • the method for manufacturing a display device according to aspect 5 of the present invention may be configured so that, in the above-described aspect 3, in the removing step, the region including the local region is a region including a plurality of local regions and not less than 10 mm and not more than 100 mm. .
  • the local surface temperature may be set to be 250 degrees Celsius or more and 500 degrees Celsius or less by irradiating the laser beam.
  • a method of heating the local portion may be used.
  • the plurality of pixels each include a plurality of sub-pixels
  • the deposition mask is one of the plurality of sub-pixels. May be used as a mask for separate deposition corresponding to the sub-pixel that emits light.
  • a photo spacer is formed on the substrate, and the local portion of the evaporation mask is the one of the evaporation masks.
  • the method may be included in an overlapping portion that overlaps with the photo spacer.
  • a photo spacer is formed on the evaporation mask, and the local portion of the evaporation mask is included in the photo spacer. It is good also as a method.
  • the method for manufacturing a display device according to Aspect 10 of the present invention is the method according to Aspect 9, wherein the method is performed before the first step, and further includes a fourth step of forming an organic layer common to the plurality of pixels, In the first step, a method may be employed in which the organic layer is broken by the photo spacer.
  • the photo spacer may be made of metal.
  • the method for manufacturing a display device according to aspect 12 of the present invention may be configured so that, in the above-mentioned aspect 10, the organic layer is cut by the photo spacer in the first step.
  • the method for manufacturing a display device according to aspect 13 of the present invention may be configured so that, in the above-described aspect 10, in the first step, the organic layer is thermally destroyed by the photo spacer heated by the irradiation of the laser beam.
  • the plurality of pixels each include a plurality of subpixels
  • the evaporation mask includes a plurality of evaporation masks.
  • Each of the plurality of deposition masks is a separate deposition mask corresponding to the sub-pixel for each sub-pixel emitting a different color among the plurality of sub-pixels, and the plurality of deposition masks are mutually separated.
  • the arrangement of the photospacer with respect to the substrate may be different.
  • the photospacer may have a frame shape surrounding an evaporation hole provided in the evaporation mask.
  • the method for manufacturing a display device according to aspect 16 of the present invention may be the method according to aspect 1, further including a fifth step of cleaning the entire deposition mask.

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Abstract

La présente invention comprend : une première étape (S60) destinée à former un film déposé en phase vapeur sur un substrat en plaçant un masque de dépôt en phase vapeur et un substrat pour que ces composants (S63) s'opposent de sorte qu'une partie du masque de dépôt en phase vapeur et une partie du substrat entrent en contact l'une avec l'autre et en réalisant un processus de dépôt en phase vapeur (S64) ; une deuxième étape (S70) réalisée en continu à partir de la première étape (S60) et destinée à nettoyer (S72) une partie de contact entre le masque de dépôt en phase vapeur et le substrat d'une manière sélective ; et une troisième étape (S60) destinée à réaliser le procédé de dépôt en phase vapeur (S64) au moyen du masque de dépôt en phase vapeur après la deuxième étape (S70).
PCT/JP2018/028333 2018-07-27 2018-07-27 Procédé de fabrication de dispositif d'affichage Ceased WO2020021722A1 (fr)

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CN113571664A (zh) * 2021-07-22 2021-10-29 武汉天马微电子有限公司 显示面板及其制作方法、显示装置
WO2022059094A1 (fr) * 2020-09-16 2022-03-24 シャープ株式会社 Procédé de fabrication de dispositifs d'affichage et dispositif d'affichage
JP2025036099A (ja) * 2023-08-31 2025-03-14 キヤノン株式会社 発光装置およびその製造方法、ならびに画像形成装置

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CN113571664A (zh) * 2021-07-22 2021-10-29 武汉天马微电子有限公司 显示面板及其制作方法、显示装置
CN113571664B (zh) * 2021-07-22 2023-11-21 武汉天马微电子有限公司 显示面板及其制作方法、显示装置
JP2025036099A (ja) * 2023-08-31 2025-03-14 キヤノン株式会社 発光装置およびその製造方法、ならびに画像形成装置

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