[go: up one dir, main page]

WO2020017329A1 - Solution de traitement et procédé de traitement - Google Patents

Solution de traitement et procédé de traitement Download PDF

Info

Publication number
WO2020017329A1
WO2020017329A1 PCT/JP2019/026449 JP2019026449W WO2020017329A1 WO 2020017329 A1 WO2020017329 A1 WO 2020017329A1 JP 2019026449 W JP2019026449 W JP 2019026449W WO 2020017329 A1 WO2020017329 A1 WO 2020017329A1
Authority
WO
WIPO (PCT)
Prior art keywords
content
treatment liquid
mass
layer
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2019/026449
Other languages
English (en)
Japanese (ja)
Inventor
上村　哲也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2020531226A priority Critical patent/JP7039706B2/ja
Publication of WO2020017329A1 publication Critical patent/WO2020017329A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a processing solution and a processing method.
  • Patent Literature 1 discloses that a plurality of photoelectric conversion layers each including a compound semiconductor and generating an electric charge by absorbing a wavelength in an infrared region, and an insulating film formed around each of the plurality of photoelectric conversion layers. There is described a light receiving element provided with (1).
  • the etching process for the SiO 2 layer of the laminate is required to have a SiO 2 layer formed on the InP layer and the InP layer.
  • the present invention when applied to the laminate having the SiO 2 layer formed on the InP layer and the InP layer can be selectively removed SiO 2, and the surface of the SiO 2 of the defects and InP layer
  • An object of the present invention is to provide a processing solution and a processing method that can suppress roughness.
  • the inventor of the present invention has made intensive studies to solve the above problems, and as a result, according to a predetermined treatment liquid, when applied to a laminate having an InP layer and a SiO 2 layer formed on the InP layer, you can selectively remove SiO 2, and become known that can suppress the surface roughness of the SiO 2 of the defects and InP layers, and completed the present invention.
  • a treatment liquid containing hydrogen fluoride and an anticorrosive The number of coarse particles having a particle diameter of 0.10 ⁇ m or more per 1 mL of the treatment liquid is less than 100 particles / mL, The number of coarse particles having a particle diameter of 0.05 ⁇ m or more per 1 mL of the treatment liquid is less than 500 particles / mL, and The value of the ratio of the number of coarse particles having a particle diameter of 0.10 ⁇ m or more per 1 mL of the processing liquid to the number of coarse particles having a particle diameter of 0.05 ⁇ m or more per 1 mL of the processing liquid is more than 0.010 or 1.000. Less than the processing solution.
  • [2] The treatment liquid according to [1], wherein the treatment liquid further contains ammonium fluoride.
  • [3] The treatment liquid according to [1] or [2], wherein the content of fluorine atoms is in a range of 0.01% by mass to 15% by mass based on the total mass of the treatment solution.
  • [4] at least one selected from the group consisting of a metal ion having a standard electrode potential of more than 0 V and an oxidizing agent, The treatment liquid according to any one of [1] to [3], wherein a total content of the metal ions and the oxidizing agent is 10 mass ppb or less with respect to a total mass of the treatment liquid.
  • the anticorrosive comprises at least one selected from the group consisting of a compound having a mercapto group, an azole derivative, a thiazole derivative, a hydroxycarboxylic acid, a reducing agent and a saccharide.
  • the processing solution according to any one of the above.
  • the anticorrosive is 2-mercaptopyridine, mercaptosuccinic acid, 2-aminoethanethiol, bismuthiol, 2-mercaptobenzimidazole, 2-amino-5-mercapto-1,3,4-thiadiazole, 3-amino- 5-mercapto-1,2,4-triazole, 5-mercapto-1H-tetrazole, 2-aminobenzimidazole, 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4- At least one selected from the group consisting of triazole, tetrazole, 5-aminotetrazole, citric acid, gluconic acid, DL-tartaric acid, galactic acid, oxalic acid, diethylhydroxylamine, ascorbic acid, fructose, glucose, and ribose And the process according to any one of [1] to [8] above.
  • a processing method for selectively removing an SiO 2 layer of a laminate formed of an InGaAs layer containing As comprising a contacting step of bringing the processing liquid according to any one of [1] to [15] into contact with the laminate.
  • x and z are each independently a real number greater than 0 and 1 or less.
  • the present invention when applied to the laminate having the SiO 2 layer formed on the InP layer and the InP layer can be selectively removed SiO 2, and the surface of the SiO 2 of the defects and InP layer A processing solution and a processing method capable of suppressing roughness can be provided.
  • an InP layer containing In x P and a coating layer formed on the InP layer, and a partial region of the coating layer is formed of a SiO 2 layer, and other regions are formed.
  • the laminated body which is formed by InGaAs layer containing in z Ga (1-z) as, you can selectively remove the SiO 2, and can suppress the surface roughness of the SiO 2 of the defects and InP layer
  • a processing solution and a processing method can be provided.
  • FIG. 1 is a cross-sectional view illustrating a configuration of a light receiving element.
  • FIG. 2 is a cross-sectional view for explaining one step of the method for manufacturing the light receiving element shown in FIG.
  • FIG. 3 is a cross-sectional view illustrating a process following FIG.
  • FIG. 4 is a cross-sectional view illustrating a process following FIG.
  • FIG. 5 is a cross-sectional view illustrating a process following FIG.
  • FIG. 6 is a cross-sectional view illustrating a process following FIG.
  • FIG. 7 is a cross-sectional view illustrating a process following FIG.
  • FIG. 8 is a cross-sectional view illustrating a process following FIG.
  • a range represented by “to” includes both sides of “to” in the range.
  • “AB” includes “A” and “B” in its range.
  • 1 ⁇ represents 0.1 nm.
  • the treatment liquid of the present invention contains hydrogen fluoride and an anticorrosive.
  • the number of coarse particles having a particle diameter of 0.10 ⁇ m or more per 1 mL of the treatment liquid is A [particles / mL]
  • the number of coarse particles having a particle diameter of 0.05 ⁇ m or more per 1 mL of the treatment liquid is represented by A As B [pieces / mL]
  • the relationships represented by the following equations (1) to (3) are simultaneously satisfied. That is, the number of coarse particles having a particle diameter of 0.10 ⁇ m or more per 1 mL of the processing liquid is less than 100 particles / mL, and the number of coarse particles having a particle diameter of 0.05 ⁇ m or more per 1 mL of the processing liquid is 500 particles / mL.
  • the ratio of the number of coarse particles having a particle diameter of 0.10 ⁇ m or more per 1 mL of the processing liquid to the number of coarse particles having a particle diameter of 0.05 ⁇ m or more per 1 mL of the processing liquid is more than 0.010. , Less than 1.000.
  • the numbers A and B of the coarse particles are not necessarily simply smaller, and A / B (the number of particles having a particle diameter of 0. 1 / mL with respect to the number of coarse particles having a particle diameter of 0.05 ⁇ m or more per 1 mL of the processing liquid). (The ratio of the number of coarse particles of 10 ⁇ m or more) needs to satisfy 0.010 ⁇ A / B ⁇ 1.000. If this relationship is not satisfied, defects of SiO 2 and surface roughness of the InP layer will increase.
  • the number of coarse particles in the treatment liquid is determined by measuring the number of particles having a particle diameter of 0.10 ⁇ m or more or a particle diameter of 0.05 ⁇ m or more (KS-18F, manufactured by Rion) using a liquid particle counter (KS-18F). Pcs / mL).
  • the value A / B of the ratio A / B of the number A of the coarse particles having a particle diameter of 0.1 ⁇ m or more per 1 mL of the processing liquid to the number B of the coarse particles having a particle diameter of 0.05 ⁇ m or more per 1 mL of the processing liquid is 0.01 to 0. .80 in many cases, preferably 0.05 to 0.80, more preferably 0.08 to 0.50, and still more preferably 0.10 to 0.30.
  • the number A of coarse particles having a particle diameter of 0.10 ⁇ m or more per 1 mL of the treatment liquid is preferably 1 / mL or more and less than 100 / mL, more preferably 1 / mL to 80 / mL, and Preferably it is 1 piece / mL to 50 pieces / mL.
  • the number B of coarse particles having a particle size of 0.05 ⁇ m or more per 1 mL of the treatment liquid is preferably 1 / mL or more and less than 500 / mL, more preferably 1 / mL to 300 / mL, and Preferably it is 3 pieces / mL to 200 pieces / mL.
  • Hydrogen fluoride may be present as molecular hydrogen fluoride in the treatment liquid of the present invention, or may be ionized and dissociated into hydrogen ions and fluoride ions.
  • Hydrogen fluoride used in producing the treatment liquid of the present invention is not particularly limited, but it is preferable to use hydrofluoric acid, which is an aqueous solution, from the viewpoint of easy handling.
  • fluorine may be in any form as long as it is a fluorine atom, and includes a fluoride ion, fluorine in a molecule, and fluorine in an ion.
  • the treatment liquid of the present invention may further contain ammonium fluoride.
  • the treatment liquid of the present invention may contain a fluorine source other than the above-described hydrogen fluoride and ammonium fluoride as the fluorine source.
  • a fluorine source include hexafluorosilicic acid (H 2 SiF 6 ), tetrafluoroboric acid (HBF 4 ), sodium fluoride (NaF), and potassium fluoride (KF).
  • the content of fluorine atoms in the treatment liquid of the present invention is not particularly limited, but is often in the range of 0.001% by mass to 20% by mass relative to the total mass of the treatment solution. Especially, it is preferably in the range of 0.01% by mass to 15% by mass, more preferably in the range of 0.03% by mass to 10% by mass, and further preferably in the range of 0.05% by mass to 3% by mass. Is within the range. When the content of fluorine atoms in the treatment liquid is within this range, the number of defects in SiO 2 is further reduced.
  • the content of fluorine atoms in the treatment liquid of the present invention is determined by measuring fluoride ions by an ion chromatography method.
  • the measurement range of the content of fluoride ions by the ion chromatography method is usually from several ppm by mass to several tens of ppm by mass. Therefore, when a sample solution having a content of several percent by mass of fluoride ions is measured, The measurement is performed by diluting the sample solution at an appropriate dilution factor (usually 10 to 10,000 times), and the measured value is multiplied by the dilution factor to obtain a value obtained as the content of fluoride ions in the sample solution.
  • the measurement is performed with the dilution factor set to 1000 times, and the content of the fluoride ion in the diluted sample solution is measured in the measurement range (several ppm to several tens of ppm). Mass ppm), multiply the measured value by the dilution factor to obtain the content of fluoride ions in the sample solution before dilution, and when not within the measurement range, change the dilution factor, Repeat the measurement until the measured value enters the measurement range.
  • the anticorrosive is preferably an anticorrosive for an InP (indium phosphide) layer and an InGaAs (indium gallium arsenide) layer.
  • Fluorine by etching the SiO 2 layer has a strong bond formation with silicon atoms by high fluoride ion nucleophilic, by the interaction of the protonation of the silicate skeleton, reacts with SiO 2, hexafluorosilicate (H 2 SiF 6 .nH 2 O), which corrodes.
  • the anticorrosive is adsorbed on the InP layer and the InGaAs layer and protects them from attack by fluoride ions, thereby suppressing their elution, and protecting the InP layer and the InGaAs layer from the etching solution.
  • the anticorrosive preferably contains at least one selected from the group consisting of a compound having a mercapto group, an azole derivative, a thiazole derivative, a hydroxycarboxylic acid, a reducing agent and a saccharide.
  • Examples of the compound having a mercapto group include 2-mercaptopyridine, mercaptosuccinic acid, 2-aminoethanethiol, bismuthiol, 2-mercaptobenzimidazole, 2-amino-5-mercapto-1,3,4-thiadiazole, 3-Amino-5-mercapto-1,2,4-triazole and 5-mercapto-1H-tetrazole.
  • azole derivatives include 2-aminobenzimidazole, 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, tetrazole and 5-aminotetrazole.
  • thiazole derivative examples include 2-aminothiazole.
  • hydroxycarboxylic acid examples include citric acid, gluconic acid, DL-tartaric acid, and galactaric acid.
  • Examples of the reducing agent include oxalic acid, diethylhydroxylamine and ascorbic acid.
  • saccharide examples include fructose, glucose and ribose.
  • the content of the anticorrosive is not particularly limited, but is often 0.005% by mass to 2.0% by mass with respect to the total mass of the treatment solution. Especially, it is preferably in the range of 0.01% by mass to 1.0% by mass, more preferably 0.01% by mass to 0.8% by mass, and still more preferably 0.01% by mass to 0.1% by mass. 5% by mass, and more preferably 0.05% by mass to 0.5% by mass. In the treatment liquid of the present invention, when the content of the anticorrosive is within this range, surface roughness of the InP layer and defects of SiO 2 can be suppressed to a higher level.
  • the content of the anticorrosive in the treatment liquid of the present invention can be measured by gas chromatography-mass spectrometry GC / MS).
  • the value (X / Y) of the ratio of the fluorine atom content (X [mass%]) to the anticorrosive content (Y [mass%]) is particularly preferable. Although not limited, it is preferably from 0.01 to 50, more preferably from 0.01 to 30, further preferably from 0.01 to 20, and still more preferably from 0.01 to 10.
  • the value of SiO 2 ER (etching rate of SiO 2 layer) / In PER (etching rate of InP layer) becomes larger, and SiO 2 selectivity is increased. Is higher.
  • the treatment liquid of the present invention may further include at least one selected from the group consisting of a metal ion having a standard electrode potential exceeding 0 V and an oxidizing agent (hereinafter may be referred to as “oxidizing agent or the like”).
  • oxidizing agent or the like an oxidizing agent
  • the total content of the oxidant and the like is preferably 10 mass ppb or less, more preferably not detected, based on the total mass of the treatment liquid.
  • the oxidizing agent or the like is not detected, it can be said that the treatment liquid does not substantially include the oxidizing agent or the like, and the content of the oxidizing agent or the like can be regarded as 0 mass ppt.
  • the treatment liquid of the present invention when the content of at least one selected from the group consisting of an oxidizing agent and a metal ion having a standard electrode potential exceeding 0 V is within this range, the surface roughness of the InP layer and the InGaAs layer is reduced. More can be suppressed.
  • the standard electrode potential is an electrode potential in a standard state (when the activities of all the chemical species involved in the reaction are 1 and in an equilibrium state) with respect to a certain electrochemical reaction (electrode reaction).
  • the potential is expressed as a reference (0 V).
  • metal ions having a standard electrode potential exceeding 0 V include bismuth ions (Bi 3+ , 0.3172 V), copper ions (Cu 2+ , 0.340 V), mercury ions (Hg 2 2+ , 0.796 V), and silver ions (Ag + , 0.7991 V), palladium ion (Pd 2+ , 0.915 V), iridium ion (Ir 3+ , 1.156 V), platinum ion (Pt 2+ , 1.188 V) and gold ion (Au 3+ , 1.88 V). 52V), but is not limited thereto.
  • the content of metal ions having a standard electrode potential of more than 0 V in the treatment liquid of the present invention can be measured by ICP / MS (inductively coupled plasma / mass spectrometry).
  • ICP-MS analyzer Agilent 8800 (manufactured by Agilent) RF output (W): 600 Carrier gas flow rate (L / min): 0.7 Makeup gas flow rate (L / min): 1 Sampling position (mm): 18
  • the oxidizing agent means a compound that corrodes the InP layer or the InGaAs layer and can be eluted into the processing solution.
  • oxidizing agents include, but are not limited to, nitric acid, hydrogen peroxide, and periodic acid.
  • the content of the oxidizing agent when the processing solution of the present invention contains an oxidizing agent is not particularly limited, but is preferably not more than 0.5 mass ppb, more preferably not detected, based on the total mass of the processing solution. (Preferably 0% by mass).
  • the content of the oxidizing agent in the treatment liquid of the present invention is measured by a measuring method according to the type of the oxidizing agent, such as an ion chromatography method, a high performance liquid chromatography, a spectrophotometer, a microplate reader or a titration. be able to.
  • the content of nitric acid in the treatment liquid of the present invention is determined by measuring nitrate ions, which are anionic components, by ion chromatography.
  • the measurement range of the content of nitrate ion by the ion chromatography method is usually from several ppm by mass to several tens ppm by mass. Therefore, when a sample solution having a nitrate ion content of several mass% is measured, it is suitable.
  • the measurement is performed by diluting the sample solution at an appropriate dilution ratio (usually 10 to 10,000 times), and the measured value is multiplied by the dilution ratio to obtain a value obtained as the nitrate ion content in the sample solution. If the content of nitrate ions in the sample solution is not known at all, the measurement is performed with the dilution factor set to 1000 times, and the content of nitrate ions in the diluted sample solution is measured in the measurement range (several ppm to tens of ppm by mass). ), Multiply the measured value by the dilution factor to obtain the content of nitrate ions in the sample solution before dilution, and when not within the measurement range, change the dilution factor to Repeat the measurement until it enters the measurement range.
  • an appropriate dilution ratio usually 10 to 10,000 times
  • the content of hydrogen peroxide in the treatment liquid of the present invention is measured using a Hiranuma hydrogen peroxide counter (HP-300, manufactured by Hitachi High-Tech Science Corporation).
  • the general measurement concentration range is several ppm to several tens ppm by mass. Therefore, when measuring a sample of several% by mass, the sample is diluted to an appropriate range (10 to 10,000 times).
  • the value obtained by the measurement is multiplied by the dilution ratio, and the value is defined as the concentration of the actual solution.
  • the concentration is unknown, the concentration is measured by concentrating 1000 times, and when the peak is within several ppm to several tens ppm by mass, the value is adopted. If not, change the dilution ratio and perform optimization to determine the concentration.
  • the ratio of the content of the fluorine atom (X [% by mass]) to the total content (C + D [% by mass]) of the metal ion and the oxidizing agent whose standard electrode potential is more than 0 V is described.
  • the value [X / (C + D)] is not particularly limited, but is often in the range of 300 to 300,000,000. Especially, it is preferably in the range of 20,000 to 10,000,000, more preferably in the range of 30,000 to 8,000,000, and still more preferably in the range of 50,000 to 5,000,000.
  • the content of the fluorine atom is X [mass%]
  • the content of the oxidizing agent is C [mass%]
  • the content of the metal ion whose standard electrode potential is more than 0 V is D [mass%].
  • X / (C + D) is within this range, surface roughness of the InP layer can be further suppressed, and defects of SiO 2 can be further suppressed.
  • the value of the ratio [Y / (C + D)] is not particularly limited, but is often in the range of 5,000 to 65,000,000. Especially, it is preferably in the range of 40,000 to 5,000,000, more preferably 40,000 to 3,000,000, and further preferably 50,000 to 1,000,000.
  • the content of the anticorrosive is Y [% by mass]
  • the content of the oxidizing agent is C [% by mass]
  • the content of the metal ion having a standard electrode potential exceeding 0 V is D [% by mass].
  • Y / (C + D) is within this range, the surface roughness of the InP layer and the surface roughness of the InGaAs layer are further suppressed.
  • the treatment liquid of the present invention may further contain a non-fluorinated nonionic surfactant.
  • non-fluorinated nonionic surfactants examples include polyoxyethylene lauryl ether, polyoxyethylene polyoxypropylene glycol, lauryl glucoside and octylphenol ethoxylate.
  • the treatment liquid of the present invention preferably contains at least one selected from the group consisting of these non-fluorinated nonionic surfactants.
  • the content of the non-fluorinated nonionic surfactant in the treatment liquid of the present invention is not particularly limited, it is often 1 ppm by mass or more based on the total mass of the treatment liquid. Among them, preferably, it is in the range of 1 mass ppm to 0.5 mass%, more preferably 10 mass ppm to 0.3 mass%, further preferably, based on the total mass of the treatment liquid. It is 50 mass ppm to 0.1 mass% (1000 mass ppm).
  • the etching rate for the InP layer and the InGaAs layer can be reduced without impairing the etching rate for the SiO 2 layer. it can.
  • the content of the non-fluorinated nonionic surfactant in the treatment solution of the present invention can be determined by an IC method (ion exchange chromatography), a GC / MS method (gas chromatography-mass spectrometry), or an LC / MS (liquid chromatography). Chromatography-mass spectrometry).
  • the treatment liquid may contain additives as long as the properties of the treatment liquid of the present invention are not impaired.
  • additives include, but are not limited to, tetramethylammonium chloride (TMACl) and ammonium polyacrylate (PAA).
  • TMACl tetramethylammonium chloride
  • PAA ammonium polyacrylate
  • the treatment liquid may contain a pH adjuster as long as the properties of the treatment liquid of the present invention are not impaired.
  • the pH adjusters are not hydrogen fluoride and its aqueous solution (hydrofluoric acid), ammonium fluoride and its aqueous solution, anticorrosives, surfactants, oxidizing agents, and the above-mentioned additives.
  • Examples of such pH adjusters include, but are not limited to, methanesulfonic acid (MSA) and diazabicycloundecene (DBU).
  • the treatment liquid of the present invention may contain a solvent.
  • the solvent is not particularly limited as long as it can dissolve the fluorine source compound and the anticorrosive.
  • Water is preferred as the solvent.
  • Water that can be used as a solvent for the treatment liquid of the present invention is not particularly limited, but preferably has high purity. Among them, distilled water, Milli-Q water or RO (reverse osmosis) water is preferred.
  • the electric conductivity of the treatment liquid of the present invention is not particularly limited, but is preferably from 200 mS / cm to 1200 mS / cm, and more preferably from 500 mS / cm to 1000 mS / cm. In the treatment liquid of the present invention, when the electric conductivity is within this range, defects of SiO 2 can be further reduced.
  • the electric conductivity of the treatment liquid of the present invention was measured using an electric conductivity meter (conductivity meter (electric conductivity meter): portable type D-70 / ES-70 series, manufactured by Horiba, Ltd.). (MS / cm).
  • the pH of the treatment liquid of the present invention is not particularly limited, but is preferably in the range of 1 to 5, more preferably in the range of 2 to 5, and even more preferably in the range of 2 to 4.5. .
  • the etching rate for the SiO 2 layer can be further increased, and the surface roughness of the InP layer and the InGaAs layer can be further suppressed.
  • the pH of the treatment liquid of the present invention is a pH measured at 23 ° C. using a pH meter (pH meter: portable D-70 series, manufactured by HORIBA, Ltd.).
  • the treatment liquid of the present invention can be produced, for example, by mixing and purifying the above components. For purification, it is desirable to filter the treatment liquid using a filter.
  • ⁇ Filtration treatment> In the method for producing a treatment liquid of the present invention, it is desirable to filter the treatment liquid, which is a substance to be purified, using a filter.
  • the method of filtering the object to be purified using a filter is not particularly limited, and the object to be purified is passed through a filter unit having a housing and a filter cartridge housed in the housing under pressure or without pressure (through the filter). Liquid).
  • the pore size of the filter is not particularly limited, and a filter having a pore size usually used for filtering a substance to be purified can be used.
  • the pore diameter of the filter is preferably 200 nm or less, more preferably 100 nm or less, still more preferably 50 nm or less, particularly preferably 20 nm or less, and particularly preferably 10 nm or less, in that the number of coarse particles contained in the treatment liquid is easily reduced. Most preferred.
  • the lower limit is not particularly limited, but is generally preferably 1 nm or more from the viewpoint of productivity.
  • the pore size and the pore size distribution of the filter are defined as isopropanol (IPA) or HFE-7200 (“Novec 7200”, manufactured by 3M, hydrofluoroether, C 4 F 9 OC). 2 H 5) means a pore size and pore size distribution are determined by the bubble point of the.
  • the filter may be used alone, or may be used together with a filter having another pore size. Among them, it is preferable to use two or more types of filters having different pore sizes from the viewpoint of more excellent productivity. In this case, if the object to be purified, which has been previously filtered through a filter having a larger pore size, is passed through a filter having a smaller pore size, clogging of the filter having a smaller pore size can be prevented.
  • the form in which two or more types of filters having different pore diameters are sequentially used is not particularly limited, and examples thereof include a method of sequentially disposing filter units along a pipe through which a substance to be purified is transferred. At this time, if an attempt is made to keep the flow rate of the object to be purified per unit time in the entire pipeline, a larger pressure is applied to the filter unit having a smaller pore size as compared with the filter unit having a larger pore size. There is. In this case, a pressure regulating valve, a damper, etc. are arranged between the filter units to make the pressure applied to the filter unit having a small pore diameter constant, or to connect a filter unit containing the same filter to a pipeline. It is preferable to increase the filtration area by, for example, arranging them in parallel along the line. This makes it possible to more stably control the number of particles in the chemical solution.
  • the material for the filter is not particularly limited, and a known material for the filter can be used. Specifically, when it is a resin, polyamide such as nylon (eg, 6-nylon and 6,6-nylon); polyolefin such as polyethylene and polypropylene; polystyrene; polyimide; polyamideimide; poly (meth) acrylate; Polytetrafluoroethylene, perfluoroalkoxyalkane, perfluoroethylene propene copolymer, ethylene-tetrafluoroethylene copolymer, ethylene-chlorotrifluoroethylene copolymer, polychlorotrifluoroethylene, polyvinylidene fluoride, and polyvinyl fluoride Fluorocarbon; polyvinyl alcohol; polyester; cellulose; cellulose acetate and the like.
  • polyamide such as nylon (eg, 6-nylon and 6,6-nylon)
  • polyolefin such as polyethylene and polypropylene
  • polystyrene poly
  • nylon especially, 6,6-nylon is preferred
  • polyolefin especially, polyethylene is preferred
  • polyolefin are preferred in that they have better solvent resistance and the resulting chemical has more excellent defect suppression performance.
  • At least one selected from the group consisting of (meth) acrylate and polyfluorocarbon (among others, polytetrafluoroethylene (PTFE) and perfluoroalkoxyalkane (PFA) is preferable) is preferable.
  • PTFE polytetrafluoroethylene
  • PFA perfluoroalkoxyalkane
  • a polymer eg, nylon-grafted UPE obtained by graft-copolymerizing a polyamide (eg, nylon-6 or nylon-6,6 or the like) with a polyolefin (eg, UPE described later) may be used as the filter material.
  • a polyamide eg, nylon-6 or nylon-6,6 or the like
  • a polyolefin eg, UPE described later
  • the filter may be a surface-treated filter.
  • the surface treatment method is not particularly limited, and a known method can be used. Examples of the surface treatment method include chemical modification treatment, plasma treatment, hydrophobic treatment, coating, gas treatment, and sintering.
  • Plasma treatment is preferable because the surface of the filter becomes hydrophilic.
  • the water contact angle on the surface of the filter material that has been hydrophilized by plasma treatment is not particularly limited, but the static contact angle at 25 ° C. measured by a contact angle meter is preferably 60 ° or less, more preferably 50 ° or less. , 30 ° or less is more preferable.
  • a method of introducing an ion exchange group into a substrate is preferable. That is, as the filter, a filter in which each of the above-described materials is used as a base material and an ion exchange group is introduced into the base material is preferable. Typically, a filter including a layer containing a substrate containing an ion exchange group on the surface of the substrate is preferable.
  • the surface-modified substrate is not particularly limited, and a filter in which an ion exchange group is introduced into the above polymer is preferable in terms of easier production.
  • the treatment method of the present invention is a treatment method using the treatment liquid of the present invention.
  • Processing method of the present invention also, In the InP layer containing x P, in the processing method of selectively removing the SiO 2 layer of the laminate having the SiO 2 layer containing SiO 2 formed on the InP layer And a contact step of bringing the treatment liquid of the present invention into contact with the laminate.
  • x is a real number exceeding 0 and 1 or less.
  • the processing method of the present invention also includes an InP layer containing In x P, and a coating layer formed on the InP layer, wherein a partial region of the coating layer is formed of a SiO 2 layer and another region is formed.
  • x and z are each independently a real number greater than 0 and 1 or less.
  • FIG. 1 illustrates a cross-sectional configuration of a light receiving element (light receiving element 1).
  • the light receiving element 1 is applied to, for example, an infrared sensor using a compound semiconductor (III-V semiconductor), and includes, for example, a plurality of light receiving unit regions (pixels P) two-dimensionally arranged. .
  • FIG. 1 illustrates a cross-sectional configuration of a portion corresponding to two pixels P.
  • the light receiving element 1 includes a photoelectric conversion layer 12 containing a compound semiconductor (III-V semiconductor).
  • a photoelectric conversion layer 12 containing a compound semiconductor (III-V semiconductor).
  • a plurality of photoelectric conversion layers 12 are formed on one surface (surface S1) of a substrate 11, and an electrode 13 is electrically connected to each photoelectric conversion layer 12.
  • an on-chip lens 17 is formed for each pixel P.
  • a protective film 16 is formed on the electrode 13 side (the side opposite to the light incident side) of the light receiving element 1.
  • a plurality of photoelectric conversion layers 12 are arranged discretely (each in an island shape) in plan view.
  • An insulating film 15 is formed so as to surround each of the plurality of photoelectric conversion layers 12.
  • a passivation film 14 is formed to cover at least a part of each photoelectric conversion layer 12, for example, the side surface 12b.
  • the insulating film 15 is formed so as to bury a region (a region between pixels) between the plurality of photoelectric conversion layers 12 covered by the passivation film 14.
  • a silicon semiconductor substrate on which a pixel circuit for reading signals from each pixel P, various wirings, and the like are formed is laminated on the electrode 13.
  • the electrodes 13 are electrically connected to various circuits formed on the silicon semiconductor substrate through, for example, bumps or vias.
  • bumps or vias the configuration of each unit will be described.
  • the substrate 11 is made of, for example, a p-type or n-type compound semiconductor, for example, InP (indium phosphide).
  • the photoelectric conversion layer 12 is formed on the surface S1 of the substrate 11 in contact with the substrate 11, but as a material of a layer interposed between the substrate 11 and the photoelectric conversion layer 12, for example, InAlAs, Semiconductor materials such as Ge, Si, GaAs, and InP may be used, but it is preferable that a material that lattice-matches with the substrate 11 and the photoelectric conversion layer 12 is selected.
  • the photoelectric conversion layer 12 contains, for example, a compound semiconductor (for example, a p-type or n-type compound semiconductor) that absorbs a wavelength (infrared IR) in an infrared region and generates charges (electrons and holes).
  • a compound semiconductor for example, a p-type or n-type compound semiconductor
  • the photoelectric conversion layer 12 is provided separately for each pixel P.
  • the compound semiconductor used for the photoelectric conversion layer 12 is, for example, InGaAs (indium gallium arsenide).
  • the composition is, for example, In x Ga (1-x) As (x: 0 ⁇ x ⁇ 1). However, it is desirable that x ⁇ 0.4 for m to obtain more sensitivity in the infrared region.
  • An example of the composition of the photoelectric conversion layer 12 that lattice-matches with the substrate 11 made of InP is In 0.53 Ga 0.47 As.
  • Examples of the impurity element included in the photoelectric conversion layer 12 include zinc (Zn) and silicon (Si).
  • the electrode 13 is an electrode to which a voltage for reading out charges (holes or electrons) generated in the photoelectric conversion layer 12 is supplied, and is formed for each pixel P.
  • a constituent material of the electrode 13 for example, titanium (Ti), tungsten (W), titanium nitride (TiN), platinum (Pt), gold (Au), germanium (Ge), nickel (Ni), and aluminum (Al) Or an alloy containing at least one of them.
  • This electrode 13 is connected to, for example, a selective area on the upper surface (surface 12 a) of the photoelectric conversion layer 12.
  • the electrode 13 is provided for each pixel P, and is formed in an opening h1 (first opening) provided in the passivation film 14 and the protection film 16, and is formed on the surface 12a of the photoelectric conversion layer 12 through the opening h1.
  • a plurality of electrodes 13 may be arranged for one pixel P. When a plurality of electrodes 13 are arranged in one pixel P, some of them may include electrodes (dummy electrodes) that do not actually contribute to charge extraction.
  • the passivation film 14 is formed to cover at least a part of the surface of the photoelectric conversion layer 12, for example, the side surface 12b.
  • the portion of the surface of the photoelectric conversion layer 12 that faces the substrate 11 specifically, the surface 12c in contact with the surface S1 of the substrate 11
  • the connection portion between the electrode 13 specifically, Is formed so as to cover a portion of the surface 12a other than the contact portion with the electrode 13.
  • the passivation film 14 is configured to include an insulator or a semiconductor that does not easily form a defect at an interface with the compound semiconductor included in the photoelectric conversion layer 12.
  • An example of such an insulator includes a high dielectric constant material such as aluminum oxide (Al 2 O 3 ) or silicon nitride (SiN).
  • Al 2 O 3 aluminum oxide
  • SiN silicon nitride
  • the passivation film 14 is InP (band gap 1.34 eV), InAlAs, or Si. It is desirable.
  • the insulating film 15 includes, for example, an oxide such as silicon oxide (SiO x ).
  • the insulating film 15 is formed so as to surround each of the plurality of photoelectric conversion layers 12, and is for electrically separating the photoelectric conversion layers 12 for each pixel P.
  • the insulating film 15 is formed so as to fill the region between the photoelectric conversion layers 12 covered by the passivation film 14.
  • the passivation film 14 is interposed between the insulating film 15 and the photoelectric conversion layer 12, so that the insulating film 15 does not directly contact the photoelectric conversion layer 12.
  • the protective film 16 is configured to include an inorganic insulating material (for example, at least one of silicon nitride (SiN), aluminum oxide (Al 2 O 3 ), and hafnium oxide (HfO 2 )).
  • the protective film 16 may be a single-layer film or a laminated film.
  • the on-chip lens 17 focuses incident light (infrared light) toward the photoelectric conversion layer 12.
  • the on-chip lens 17 may be provided as needed. Further, the shape of the on-chip lens 17 is not limited to the illustrated one.
  • a color filter may be further disposed between the substrate 11 and the on-chip lens 17.
  • the light receiving element 1 can be manufactured, for example, as follows. 2 to 8 show the steps of manufacturing the light receiving element 1 in the order of steps. Note that FIGS. 2 to 8 show only a region corresponding to one pixel P for simplification.
  • the photoelectric conversion layer 12 containing the above-described material is formed in a selective region on the substrate 11 (first substrate) made of, for example, InP.
  • first substrate made of, for example, InP.
  • an oxide film 51 is pattern-formed on the surface S1 of the substrate 11.
  • an opening 51a is formed by using, for example, photolithography and dry etching.
  • a plurality of openings 51a are formed for each pixel P.
  • the photoelectric conversion layer 12 containing, for example, InGaAs is formed in the opening 51a by selective epitaxial growth.
  • InGaAs By growing InGaAs on the substrate 11 made of InP, InP and InGaAs are easily lattice-matched, and crystal defects in the photoelectric conversion layer 12 can be minimized.
  • a portion of the photoelectric conversion layer 12 that has grown beyond the upper surface of the oxide film 51 is removed by, for example, CMP (Chemical Mechanical Polishing), and the upper surface (surface) is removed. 12a) is flattened.
  • the oxide film 51 is selectively removed by, for example, etching.
  • a chemical solution capable of securing an etching selectivity between the substrate 11 (InP) and the photoelectric conversion layer 12 (InGaAs) and the oxide film 51 is used.
  • Examples of such a chemical include a hydrofluoric acid-based chemical.
  • the photoelectric conversion layer 12 can be formed in a selective region on the substrate 11. That is, the plurality of photoelectric conversion layers 12 can be formed in an island shape on the substrate 11.
  • the passivation film 14 containing the above-described material is formed by, for example, CVD (Chemical Vapor Deposition) or ALD (Atomic Layer Deposition). Thereby, the passivation film 14 is formed to cover the surface 12a and the side surface 12b of the photoelectric conversion layer 12.
  • the insulating film 15 made of the above-described material is formed. Specifically, the insulating film 15 is formed using, for example, CVD or the like so as to fill the gap between the photoelectric conversion layers 12 covered with the passivation film 14, and then the surface is flattened using, for example, CMP.
  • the electrode 13 made of the above-described material is formed. Specifically, first, a protective film 16 made of the above-described material is formed on the entire surface of the passivation film 14 and the insulating film 15 by using, for example, CVD or sputtering. Next, a part of the passivation film 14 and the protection film 16 corresponding to the surface 12a of the photoelectric conversion layer 12 is opened (an opening h1 is formed), and an electrode 13 is formed in the opening h1.
  • the electrode 13 made of the above-described material is formed by, for example, CVD, plasma CVD, thermal CVD, ALD, or an evaporation method so as to fill the opening h1, and then patterned by photolithography and etching. .
  • the portion of the surface of the photoelectric conversion layer 12 other than the portion facing the substrate 11 and the portion connected to the electrode 13 is covered with the passivation film 14.
  • the light receiving element 1 shown in FIG. 1 is completed by forming or bonding the on-chip lens 17 on the surface S2 side of the substrate 11.
  • the treatment liquid of the present invention selectively removes the oxide film 51 from the state where the photoelectric conversion layer 12 and the oxide film 51 are formed on the substrate 11 containing InP as shown in FIG. In order to make it into a state, it can be used as an etching treatment liquid when the oxide film 51 containing SiO 2 is selectively removed.
  • the processing liquid of the present invention includes a substrate 11 containing InP (corresponding to an InP layer containing In x P) and a photoelectric conversion layer 12 containing InGaAs (corresponding to an InGaAs layer containing In z Ga (1-z) As). Surface roughness and the occurrence of defects in SiO 2 can be suppressed, so that the occurrence of defective products is small.
  • the non-fluorinated nonionic surfactant When the treatment liquid of the present invention contains a non-fluorinated nonionic surfactant, the non-fluorinated nonionic surfactant further suppresses the dissolution of InP and InGaAs, so that the substrate 11 containing InP (the InP layer containing In x P) corresponding) and corresponds to the InGaAs layer containing a photoelectric conversion layer 12 (in z Ga (1- z) As containing InGaAs) without dissolving, insulating film 51 (corresponding to the SiO 2 layer containing SiO 2) It can be selectively removed.
  • Examples 1 to 46, Comparative Examples 1 to 5 ⁇ Manufacture of treatment liquid> Each component was mixed with the composition shown in Table 1, and filtered once or twice with a filter made of HDPE (high-density polyethylene) having a pore diameter shown in Table 2, to produce a treatment liquid.
  • HDPE high-density polyethylene
  • TMACl tetramethylammonium chloride
  • MSA methanesulfonic acid
  • DBU diazabicycloundecene
  • a / B rounded off the fourth digit after the decimal point, and calculated
  • the column “metal ion” indicates the content C (mass ppt) of the metal ion having a standard electrode potential of more than 0 V
  • column “Oxidant” indicates the content D (mass ppt) of the oxidizer. Shown respectively.
  • A, B, C, D, X, and Y have the following meanings, respectively.
  • D Content of oxidizing agent (mass ppt)
  • X content of fluorine atoms (% by mass)
  • Y Content of anticorrosive (mass%)
  • a substrate obtained by forming a 100 ° InGaAs layer on a commercially available silicon substrate was treated with the processing liquids of Examples 1 to 46 and Comparative Examples 1 to 5 for a time period corresponding to the removal of 10 ° of the InGaAs layer. And used for etching.
  • the silicon substrate after the treatment was observed using an atomic force microscope (manufactured by Hitachi High-Technologies Corporation) to evaluate the surface roughness (Ra). The evaluation was performed according to the following criteria.
  • a Ra is less than 0.2 ° in a 1.0 ⁇ m square measurement area
  • B B is 1.0 mm or more and less than 0.5 mm Ra in a 1.0 ⁇ m square measurement area
  • C Ra is 0 in a 1.0 ⁇ m square measurement area Ra is 1.0 ° or more in a measurement area of D 1.0 ⁇ m ⁇ which is not less than 0.5 ° and less than 1.0 °
  • the silicon substrate after the treatment was observed using an atomic force microscope (manufactured by Hitachi High-Technologies Corporation) to evaluate the surface roughness (Ra). The evaluation was performed according to the following criteria.
  • a Ra is less than 0.2 ° in a 1.0 ⁇ m square measurement area
  • B B is 1.0 mm or more and less than 0.5 mm Ra in a 1.0 ⁇ m square measurement area
  • C Ra is 0 in a 1.0 ⁇ m square measurement area Ra is 1.0 ° or more in a measurement area of D 1.0 ⁇ m ⁇ which is not less than 0.5 ° and less than 1.0 °
  • SiO 2 ER Etching rate of SiO 2 layer
  • InP ER Etching rate of InP layer
  • InGaAs ER Etching rate of InGaAs layer
  • Examples 3, 5 to 9 In Examples 3 and 6 to 8, the evaluation of the defect of SiO 2 is A or B, whereas in Examples 5 and 9, the evaluation of the defect of SiO 2 is C. Examples 3 and 6 to 8 in which the content of fluorine atoms is in the range of 0.01% to 15% by mass have better defects in SiO 2 as compared with Examples 5 and 9 in which the content is out of the range. Had been suppressed.
  • Examples 6 and 7 the evaluation of the defect of SiO 2 is A, whereas in Examples 3, 5, 8 and 9, the evaluation of the defect of SiO 2 is B or C.
  • Example 3 and 11 to 13 the evaluation of the surface roughness of the InP layer and the surface roughness of the InGaAs layer was A or B, whereas in Example 10, the surface roughness of the InP layer and the surface roughness of the InGaAs layer were evaluated. The evaluation is C.
  • the evaluation of the defect of SiO 2 is A or B, while in Example 14, the evaluation of the defect of SiO 2 is C.
  • the surface roughness of the InP layer and the surface roughness of the InGaAs layer were lower than those in Example 10 out of the range. The defects were better suppressed, and the defects of SiO 2 were better suppressed than in Example 14.
  • Examples 11, 12 and 14 the evaluations of the surface roughness of the InP layer and the surface roughness of the InGaAs layer are all A, whereas Examples 3, 10 and 13 show the surface roughness of the InP layer and the InGaAs layer. Of the surface roughness is B or C.
  • Examples 11, 12, and 14 in which the ratio of the content Y of the anticorrosive to the total content (C + D) of the metal ion and the oxidizing agent were in the range of 40,000 to 5,000,000, and Examples 3, 10, and 14, which were out of the range. 13 and 13, the surface roughness of the InP layer and the surface roughness of the InGaAs layer were better suppressed.
  • Examples 3, 5 to 14 Examples 3, 6 to 9 and 12 to 14 in which the value X / Y of the ratio of the content X of the fluorine atom to the content Y of the anticorrosive is in the range of 0.01 to 50 are out of the range. Compared to 5, 10 and 11, the values of SiO 2 ER / InPER were larger and the SiO 2 selectivity was higher.
  • Example 3 43 to 46 In Examples 43 to 46, as compared with Example 3, the selectivity of SiO 2 was excellent, and the surface roughness of the InP layer and the surface roughness of the InGaAs layer were also better suppressed.
  • Light receiving element 11 substrate 12 photoelectric conversion layer 12a surface (upper surface of photoelectric conversion layer 12) 12b ... side surface (side surface of photoelectric conversion layer 12) 12c: surface (surface in contact with surface S1 of substrate 11) Reference numeral 13: electrode 14, passivation film 15, insulating film 16, protective film 17, on-chip lens 51, oxide film 51a, opening P, pixel S1, surface (one surface of the substrate 11) S2: Surface (surface on the light incident side of substrate 11) h1 ... opening

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Weting (AREA)
  • Light Receiving Elements (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)

Abstract

Le but de la présente invention est de fournir une solution de traitement et un procédé de traitement qui, lorsqu'ils sont appliqués à un corps stratifié comprenant une couche d'InP et une couche de SiO2 formée sur la couche d'InP, permet de retirer sélectivement la couche de SiO2 et peut supprimer des défauts dans la couche de SiO2 et la rugosité de surface de la couche d'InP. L'invention concerne un procédé de traitement et une solution de traitement qui contient du fluorure d'hydrogène et un agent anticorrosif, le nombre de particules grossières ayant une taille de particule supérieure ou égale à 0,10 µm pour 1 mL de la solution de traitement étant inférieur à 100 particules/mL, le nombre de particules grossières ayant une taille de particule supérieure ou égale à 0,05 µm pour 1 mL de la solution de traitement est inférieur à 500 particules/mL, et la valeur du rapport du nombre de particules grossières ayant une taille de particule supérieure ou égale à 0,10 µm pour 1 mL de la solution de traitement au nombre de particules grossières avec une taille de particule supérieure ou égale à 0,05 µm pour 1 mL de la solution de traitement est supérieure à 0,010 et inférieure à 1000.
PCT/JP2019/026449 2018-07-20 2019-07-03 Solution de traitement et procédé de traitement Ceased WO2020017329A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2020531226A JP7039706B2 (ja) 2018-07-20 2019-07-03 処理液および処理方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-137001 2018-07-20
JP2018137001 2018-07-20

Publications (1)

Publication Number Publication Date
WO2020017329A1 true WO2020017329A1 (fr) 2020-01-23

Family

ID=69164330

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/026449 Ceased WO2020017329A1 (fr) 2018-07-20 2019-07-03 Solution de traitement et procédé de traitement

Country Status (3)

Country Link
JP (1) JP7039706B2 (fr)
TW (1) TW202007737A (fr)
WO (1) WO2020017329A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022208713A1 (fr) * 2021-03-31 2022-10-06 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie et dispositif électronique

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008193100A (ja) * 2007-02-07 2008-08-21 Siltronic Ag 電気絶縁材料の表面上の半導体層の厚さを減少しかつ均一化する方法
JP2013537724A (ja) * 2010-08-27 2013-10-03 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 乾燥間の高アスペクト比構造崩壊を防止する方法
JP2014185332A (ja) * 2013-02-21 2014-10-02 Fujifilm Corp 酸化防止処理方法、これを用いた電子デバイスの製造方法、及びこれらに用いられる金属防食剤
JP2014220300A (ja) * 2013-05-02 2014-11-20 富士フイルム株式会社 エッチング液、これを用いたエッチング方法、エッチング液のキット、および半導体基板製品の製造方法
WO2016129509A1 (fr) * 2015-02-12 2016-08-18 富士フイルム株式会社 Solution et procédé d'élimination d'oxyde d'élément du groupe iii-v, solution de traitement d'un composé d'élément du groupe iii-v, solution destinée à empêcher l'oxydation de l'élément du groupe iii-v, solution de traitement d'un substrat semi-conducteur et procédé de production de produit de substrat semi-conducteur
WO2017122537A1 (fr) * 2016-01-13 2017-07-20 ソニー株式会社 Élément de réception de lumière, procédé de fabrication d'élément de réception de lumière, élément de capture d'image et dispositif électronique

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008193100A (ja) * 2007-02-07 2008-08-21 Siltronic Ag 電気絶縁材料の表面上の半導体層の厚さを減少しかつ均一化する方法
JP2013537724A (ja) * 2010-08-27 2013-10-03 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 乾燥間の高アスペクト比構造崩壊を防止する方法
JP2014185332A (ja) * 2013-02-21 2014-10-02 Fujifilm Corp 酸化防止処理方法、これを用いた電子デバイスの製造方法、及びこれらに用いられる金属防食剤
JP2014220300A (ja) * 2013-05-02 2014-11-20 富士フイルム株式会社 エッチング液、これを用いたエッチング方法、エッチング液のキット、および半導体基板製品の製造方法
WO2016129509A1 (fr) * 2015-02-12 2016-08-18 富士フイルム株式会社 Solution et procédé d'élimination d'oxyde d'élément du groupe iii-v, solution de traitement d'un composé d'élément du groupe iii-v, solution destinée à empêcher l'oxydation de l'élément du groupe iii-v, solution de traitement d'un substrat semi-conducteur et procédé de production de produit de substrat semi-conducteur
WO2017122537A1 (fr) * 2016-01-13 2017-07-20 ソニー株式会社 Élément de réception de lumière, procédé de fabrication d'élément de réception de lumière, élément de capture d'image et dispositif électronique

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022208713A1 (fr) * 2021-03-31 2022-10-06 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie et dispositif électronique

Also Published As

Publication number Publication date
TW202007737A (zh) 2020-02-16
JPWO2020017329A1 (ja) 2021-05-20
JP7039706B2 (ja) 2022-03-22

Similar Documents

Publication Publication Date Title
TWI770099B (zh) 藥液的品質檢查方法
US7955870B2 (en) Dry etch stop process for eliminating electrical shorting in MRAM device structures
US6682659B1 (en) Method for forming corrosion inhibited conductor layer
KR102055154B1 (ko) 처리액 및 기판 세정 방법
US20070155027A1 (en) Dry etch stop process for eliminating electrical shorting in MRAM device structures
KR102295991B1 (ko) 처리액, 키트, 기판의 세정 방법
Zhang et al. Low damage cryogenic etching of porous organosilicate low-k materials using SF6/O2/SiF4
WO2002099394A1 (fr) Procedes et systemes de controle de fluides de traitement
JP7039706B2 (ja) 処理液および処理方法
JP7196177B2 (ja) 処理液および処理方法
US20030011774A1 (en) Methods and systems for monitoring process fluids
US11742230B2 (en) Contaminant detection tools including nebulizer and related methods
TWI861280B (zh) 蝕刻液、蝕刻液之製造方法、被處理物之處理方法，及含有釕的配線之製造方法
Gu et al. Effect of additives in organic acid solutions for post-CMP cleaning on polymer low-k fluorocarbon
KR100744005B1 (ko) 반도체 소자의 금속 패턴 형성방법
Hussain et al. Metal wet etch issues and effects in dual metal gate stack integration
US6146909A (en) Detecting trace levels of copper
KR20150129828A (ko) 암모니아 함유 대기에서의 금속 옥사이드들의 uv를 이용한 제거
JPH0959685A (ja) 半導体装置の洗浄に使用される洗浄液及びこれを用いた洗浄方法
US20230170427A1 (en) Focal plane array having an indium arsenide absorber layer
Sato et al. Comparative surface study on hydrogen terminated Si surface covered with alcohols
US6323136B1 (en) Method of producing samples of semiconductor substrate with quantified amount of contamination
CN117397010B (zh) 清洗组合物、半导体基板的清洗方法以及半导体元件的制造方法
Wang et al. Characterization and Modeling of Out‐Diffusion of Manganese and Zinc Impurities from Deep Ultraviolet Photoresist
JPH0445531A (ja) シリコン酸化膜のエッチング液およびシリコン酸化膜のエッチング方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19837905

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2020531226

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19837905

Country of ref document: EP

Kind code of ref document: A1