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WO2019235562A1 - Procédé de fabrication d'une feuille adhésive, procédé de fabrication d'un ruban de découpage en puces/fixage de puces, procédé de fabrication d'un dispositif à semi-conducteur, procédé de traitement d'un adhésif, procédé d'immobilisation d'une partie adhérée et procédé de décollage d'une partie adhérée - Google Patents

Procédé de fabrication d'une feuille adhésive, procédé de fabrication d'un ruban de découpage en puces/fixage de puces, procédé de fabrication d'un dispositif à semi-conducteur, procédé de traitement d'un adhésif, procédé d'immobilisation d'une partie adhérée et procédé de décollage d'une partie adhérée Download PDF

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Publication number
WO2019235562A1
WO2019235562A1 PCT/JP2019/022518 JP2019022518W WO2019235562A1 WO 2019235562 A1 WO2019235562 A1 WO 2019235562A1 JP 2019022518 W JP2019022518 W JP 2019022518W WO 2019235562 A1 WO2019235562 A1 WO 2019235562A1
Authority
WO
WIPO (PCT)
Prior art keywords
pressure
sensitive adhesive
adhesive layer
plasma treatment
adherend
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2019/022518
Other languages
English (en)
Japanese (ja)
Inventor
美千子 彼谷
大輔 山中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to KR1020207037539A priority Critical patent/KR102602484B1/ko
Priority to SG11202011944WA priority patent/SG11202011944WA/en
Priority to CN201980038462.3A priority patent/CN112272691B/zh
Priority to JP2020523168A priority patent/JP7283472B2/ja
Priority to CN202310234425.8A priority patent/CN116218389B/xx
Publication of WO2019235562A1 publication Critical patent/WO2019235562A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/02—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/124—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present on both sides of the carrier, e.g. double-sided adhesive tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
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    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a method for producing a pressure-sensitive adhesive sheet, a method for producing a dicing die-bonding integrated tape, a method for producing a semiconductor device, a method for treating a pressure-sensitive adhesive, a method for fixing an adherend, and a method for peeling the adherend.
  • Adhesives are used in various applications in the industrial field. Industrially, it is common to control the adhesive strength (bulk characteristics of the adhesive itself due to the crosslink density) by adjusting the crosslink density.
  • Patent Document 1 describes that the adhesiveness between a synthetic resin product and a coating film is improved by performing a plasma treatment on the synthetic resin product (adhered body).
  • Patent Document 2 in the pressure-sensitive adhesive sheet, it is possible to improve the anchoring property of the surface of the plastic film substrate with respect to the pressure-sensitive adhesive layer by performing plasma treatment or the like on the plastic film substrate (adhered body).
  • plasma treatment or the like on the plastic film substrate
  • JP 59-1000014 A JP2011-068718A
  • this invention makes it the main objective to provide the manufacturing method of the adhesive sheet which can manufacture the adhesive sheet which has an adhesive layer excellent in adhesive force.
  • One aspect of the present invention is a process for preparing a pressure-sensitive adhesive sheet precursor having a base material and a pressure-sensitive adhesive layer provided on the base material, and a surface of the pressure-sensitive adhesive sheet precursor opposite to the base material.
  • the manufacturing method of an adhesive sheet provided with the process of implementing plasma processing with respect to it.
  • the plasma treatment may be a plasma treatment using atmospheric pressure plasma.
  • the treatment temperature of the plasma treatment may be lower than the lower one of the melting point of the substrate and the melting point of the pressure-sensitive adhesive layer.
  • the method for producing a pressure-sensitive adhesive sheet may further include a step of attaching a protective material on the surface of the pressure-sensitive adhesive layer on which the plasma treatment has been performed on the side opposite to the base material.
  • the protective material may be one in which the surface to be attached to the pressure-sensitive adhesive layer that has been subjected to plasma treatment is treated by plasma treatment.
  • the present invention provides an adhesive sheet obtained by the above-described production method.
  • the present invention provides a pressure-sensitive adhesive sheet obtained by the above-described manufacturing method, comprising a step of forming an adhesive layer on the surface of the pressure-sensitive adhesive layer on which the plasma treatment is performed, on the side opposite to the substrate.
  • a method for manufacturing die bonding integrated tape Provide a method for manufacturing die bonding integrated tape.
  • the present invention provides a dicing / die bonding integrated tape obtained by the above-described manufacturing method.
  • the present invention includes a step of attaching an adhesive layer of a dicing die bonding integrated tape obtained by the above-described manufacturing method to a semiconductor wafer, and the semiconductor wafer, the adhesive layer, and the plasma treatment.
  • the step of separating the pressure-sensitive adhesive layer, the step of picking up the semiconductor element to which the adhesive layer has adhered from the pressure-sensitive adhesive layer that has been subjected to the plasma treatment, and the semiconductor element for mounting the semiconductor element through the adhesive layer A method of manufacturing a semiconductor device, comprising the step of bonding to a support substrate.
  • the present invention provides a method for treating an adhesive comprising a step of performing a plasma treatment on the adhesive.
  • the plasma treatment may be a plasma treatment using atmospheric pressure plasma.
  • the treatment temperature of the plasma treatment may be less than the melting point of the adhesive.
  • the present invention provides a method for immobilizing an adherend comprising a step of attaching a second adherend to the first adherend via the pressure-sensitive adhesive treated by the above-described method. I will provide a.
  • the present invention provides an interface between the first adherend and the adhesive, or the interface between the second adherend and the adhesive, which is immobilized by the above-described method.
  • a method for peeling an adherend comprising a step of treating at least one with water to peel the first adherend and the second adherend.
  • the manufacturing method of the dicing die-bonding integrated tape using the adhesive sheet obtained by such a manufacturing method can be provided.
  • the manufacturing method of the semiconductor device using the dicing die-bonding integrated tape obtained by such a manufacturing method can be provided.
  • the processing method of an adhesive, the fixing method of a to-be-adhered body, and the peeling method of a to-be-adhered body can be provided.
  • FIG. 1 is a cross-sectional view schematically showing one embodiment of a method for producing an adhesive sheet.
  • 1A, 1B, 1C, and 1D are cross-sectional views schematically showing each step.
  • FIG. 2 is a cross-sectional view schematically showing one embodiment of a method for producing a dicing / die bonding integrated tape.
  • 2A, 2B, and 2C are cross-sectional views schematically showing each step.
  • FIG. 3 is a cross-sectional view schematically showing one embodiment of a method for manufacturing a semiconductor device.
  • FIG. 4 is a cross-sectional view schematically showing one embodiment of a semiconductor device.
  • a numerical range indicated by using “to” indicates a range including the numerical values described before and after “to” as the minimum value and the maximum value, respectively.
  • the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another numerical range.
  • the upper limit value or the lower limit value of the numerical range may be replaced with the values shown in the examples.
  • (meth) acrylate means acrylate or a corresponding methacrylate.
  • FIG. 1 is a cross-sectional view schematically showing one embodiment of a method for producing an adhesive sheet.
  • the method for producing a pressure-sensitive adhesive sheet according to the present embodiment includes a step of preparing a pressure-sensitive adhesive sheet precursor having a base material and a pressure-sensitive adhesive layer provided on the base material (preparing step of the pressure-sensitive adhesive sheet precursor), and a pressure-sensitive adhesive sheet precursor.
  • a step of performing plasma treatment on the surface of the body opposite to the base material of the pressure-sensitive adhesive layer step of performing plasma treatment.
  • the manufacturing method of the adhesive sheet which concerns on this embodiment is further equipped with the process (protective material arrangement
  • a pressure-sensitive adhesive sheet precursor 100 to be subjected to plasma processing is prepared (see FIG. 1A).
  • the pressure sensitive adhesive sheet precursor 100 includes a base material 10 and a pressure sensitive adhesive layer 20 provided on the base material 10.
  • the substrate 10 is not particularly limited as long as it has a melting point (or decomposition point or softening point) higher than the heat generated by the plasma treatment, and a substrate film used in the field of pressure-sensitive adhesives can be used. . It is preferable that the base film can be expanded in the die bonding step. Examples of such a base film include polyester films such as polyethylene terephthalate films, polytetrafluoroethylene films, polyethylene films, polypropylene films, polymethylpentene films, polyolefin films such as polyvinyl acetate films, and polyvinyl chloride. Examples thereof include plastic films such as films and polyimide films.
  • the base material 10 may be subjected to surface treatment such as corona treatment on the surface on which the pressure-sensitive adhesive layer 20 is formed.
  • the pressure-sensitive adhesive layer 20 is a layer composed of a pressure-sensitive adhesive component.
  • the pressure-sensitive adhesive component constituting the pressure-sensitive adhesive layer 20 is not particularly limited as long as it has a melting point (or decomposition point or softening point) higher than the heat generated by the plasma treatment, but has an adhesive strength at room temperature (25 ° C.). It is preferable that it has adhesiveness with respect to a layer (for example, an adhesive layer described later) laminated on the pressure-sensitive adhesive layer 20.
  • the pressure-sensitive adhesive component constituting the pressure-sensitive adhesive layer 20 may contain a base resin. Examples of the base resin include acrylic resin, synthetic rubber, natural rubber, and polyimide resin.
  • the base resin preferably has a functional group such as a hydroxyl group or a carboxy group capable of reacting with a crosslinking agent described later from the viewpoint of reducing the adhesive residue of the pressure-sensitive adhesive component.
  • the base resin may be a resin curable by high energy rays such as ultraviolet rays or radiation, or a resin curable by heat.
  • the base resin is preferably cured by high energy rays, and more preferably cured by ultraviolet rays (ultraviolet curable base resin).
  • a photopolymerization initiator When using a resin curable by high energy rays as the base resin, a photopolymerization initiator may be used in combination as necessary.
  • the photopolymerization initiator may be, for example, an aromatic ketone compound, a benzoin ether compound, a benzyl compound, an ester compound, an acridine compound, a 2,4,5-triarylimidazole dimer, and the like.
  • the pressure-sensitive adhesive component may contain a cross-linking agent capable of forming a cross-linked structure with the functional group of the base resin in order to adjust the adhesive force.
  • the cross-linking agent preferably has at least one functional group selected from the group consisting of an epoxy group, an isocyanate group, an aziridine group, and a triazinyl group.
  • a crosslinking agent may be used individually by 1 type, and may be used in combination of 2 or more type.
  • the adjustment of the content of the crosslinking agent is effective for maintaining the effect of the plasma treatment.
  • the content of the crosslinking agent is preferably 5 parts by mass or more, more preferably 7 parts by mass or more, and further preferably 10 parts by mass or more with respect to 100 parts by mass of the base resin.
  • the content of the crosslinking agent may be 30 parts by mass or less with respect to 100 parts by mass of the base resin.
  • the content of the crosslinking agent is 30 parts by mass or less with respect to 100 parts by mass of the base resin, the effect of the plasma treatment tends to be maintained, and the adhesiveness between the pressure-sensitive adhesive layer and the protective material is reduced. It tends to be suppressed.
  • the pressure-sensitive adhesive component may contain other components.
  • Other components include, for example, amine and tin catalysts added for the purpose of accelerating the crosslinking reaction between the base resin and the photopolymerization initiator; rosin and terpene resin systems added for the purpose of appropriately adjusting the adhesive properties Tackifiers such as: various surfactants and the like.
  • the pressure-sensitive adhesive layer 20 may be a layer composed of a pressure-sensitive adhesive component containing an acrylic resin having a hydroxyl group and a crosslinking agent having an isocyanate group.
  • An acrylic resin having a hydroxyl group as a base resin is obtained by polymerizing a monomer component containing a (meth) acrylate having a hydroxyl group.
  • the polymerization method can be appropriately selected from known polymerization methods such as various radical polymerizations, and may be, for example, a suspension polymerization method, a solution polymerization method, a bulk polymerization method, or the like.
  • a polymerization initiator may be used as necessary.
  • examples of such polymerization initiators include ketone peroxide, peroxyketal, hydroperoxide, dialkyl peroxide, diacyl peroxide, peroxycarbonate, peroxyester, and 2,2′-azobisisobutyronitrile. 2,2′-azobis (2,4-dimethylvaleronitrile), 2,2′-azobis (4-methoxy-2′-dimethylvaleronitrile), and the like.
  • the pressure-sensitive adhesive sheet precursor 100 having the pressure-sensitive adhesive layer 20 can be manufactured using a known method.
  • the pressure-sensitive adhesive sheet precursor 100 is coated with, for example, a step of diluting a material for the pressure-sensitive adhesive layer with a dispersion medium to prepare a varnish, a step of coating the obtained varnish on the substrate 10 described above, and And a step of removing the dispersion medium from the varnish.
  • the thickness of the pressure-sensitive adhesive layer 20 in the pressure-sensitive adhesive sheet precursor 100 may be 0.1 to 30 ⁇ m. When the thickness of the pressure-sensitive adhesive layer 20 is 0.1 ⁇ m or more, sufficient adhesive force tends to be ensured. When the thickness of the pressure-sensitive adhesive layer 20 is 30 ⁇ m or less, it tends to be economically advantageous.
  • the total thickness of the pressure-sensitive adhesive sheet precursor 100 may be 5 to 150 ⁇ m, 50 to 150 ⁇ m, or 100 to 150 ⁇ m.
  • the protective material may be affixed on the surface on the opposite side to the base material 10 of the adhesive layer 20, before performing the plasma processing.
  • the thing similar to what was illustrated by the below-mentioned protective material 30 can be used for a protective material.
  • ⁇ Plasma treatment process> In this step, plasma treatment (A in FIG. 1B) is performed on the surface of the pressure-sensitive adhesive sheet precursor 100 on the side opposite to the substrate 10 of the pressure-sensitive adhesive layer 20 (see FIG. 1B). Thereby, the pressure-sensitive adhesive sheet 110 having the pressure-sensitive adhesive layer (the pressure-sensitive adhesive layer 20A after the plasma treatment) on which the plasma treatment A has been performed can be manufactured (see FIG. 1C).
  • Plasma is a state in which molecules constituting a gas are partially or completely ionized, and freely move separately from cations and electrons.
  • the plasma treatment is not particularly limited, but may be a plasma treatment using atmospheric pressure plasma from the viewpoint of cost, processing capability, and damage reduction.
  • the plasma treatment using atmospheric pressure plasma can be performed using, for example, an ultra-high density atmospheric pressure plasma unit (manufactured by Fuji Machine Manufacturing Co., Ltd., trade name: FPB-20 TYPE II).
  • the plasma processing temperature may be lower than the lower one of the melting point of the base material 10 and the melting point of the pressure-sensitive adhesive layer 20.
  • the plasma treatment is performed so that wrinkles, deflections, and the like are not generated in the pressure-sensitive adhesive sheet precursor 100 (base material 10 and pressure-sensitive adhesive layer 20) within the processing time, that is, the pressure-sensitive adhesive sheet is not significantly deformed by heat. It is preferable to adjust the conditions such as the processing temperature and the processing speed. If wrinkles, deflections, etc. occur, there is a risk of hindering the operation of the apparatus during plasma processing.
  • the temperature condition of the plasma treatment may be, for example, 300 ° C. or lower, 250 ° C. or lower, or 200 ° C. or lower.
  • Plasma processing can adjust the processing area. Therefore, the plasma treatment can be performed on part or all of the surface of the pressure-sensitive adhesive sheet precursor 100 on the side opposite to the substrate 10 of the pressure-sensitive adhesive layer 20.
  • the contact angle of the surface to be processed can be adjusted. Portion having a high contact angle and a portion having a high contact angle (that is, a portion having a low adhesive force of the adhesive layer).
  • the protective material 30 is affixed on the surface of the pressure-sensitive adhesive layer (the pressure-sensitive adhesive layer 20A after the plasma treatment) on the side opposite to the substrate 10 (see FIG. 1D). Thereby, the adhesive sheet 120 with a protective material can be obtained.
  • the protective material 30 can be attached using a known method.
  • the protective material 30 is not particularly limited, and a protective film used in the field of pressure-sensitive adhesives can be used.
  • the protective film include polyester films such as polyethylene terephthalate film, polytetrafluoroethylene films, polyethylene films, polypropylene films, polymethylpentene films, polyolefin films such as polyvinyl acetate films, polyvinyl chloride films, polyimide films, and the like.
  • the plastic film etc. are mentioned.
  • paper, a nonwoven fabric, metal foil, etc. can be used for a protective film.
  • the surface of the protective material 30 on the pressure-sensitive adhesive layer 20A side after the plasma treatment may be treated with a release agent such as a silicone release agent, a fluorine release agent, or a long-chain alkyl acrylate release agent.
  • the protective material 30 may be one in which the surface of the protective material 30 to be attached to the pressure-sensitive adhesive layer 20A after the plasma treatment is treated by the plasma treatment.
  • the thickness of the protective material 30 is not particularly limited, but may be 5 to 500 ⁇ m, 10 to 200 ⁇ m, or 15 to 100 ⁇ m.
  • FIG. 2 is a cross-sectional view schematically showing one embodiment of a method for producing a dicing / die bonding integrated tape.
  • the manufacturing method of the dicing die bonding integrated tape 130 according to the present embodiment is the same as the surface of the pressure-sensitive adhesive layer 20 ⁇ / b> A on the side opposite to the base material 10 (plasma processing) in the pressure-sensitive adhesive sheet 110 obtained by the above-described manufacturing method.
  • a step of forming the adhesive layer 40 on the surface see FIG. 2A and FIG. 2B).
  • the adhesive layer 40 is a layer composed of an adhesive component.
  • the adhesive component that constitutes the adhesive layer 40 include a thermosetting adhesive component, a photocurable adhesive component, a thermoplastic adhesive component, and an oxygen-reactive adhesive component.
  • the adhesive layer preferably contains a thermosetting adhesive component from the viewpoint of adhesiveness.
  • the thermosetting adhesive component preferably contains an epoxy resin and a phenol resin that can be a curing agent for the epoxy resin from the viewpoint of adhesiveness.
  • the epoxy resin can be used without particular limitation as long as it has an epoxy group in the molecule.
  • the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolak type epoxy resin, bisphenol F novolak type epoxy resin.
  • the content of the epoxy resin may be 2 to 50% by mass based on the total amount of the adhesive layer.
  • the phenol resin can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule.
  • examples of the phenol resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol, aminophenol and / or naphthols such as ⁇ -naphthol, ⁇ -naphthol, dihydroxynaphthalene and formaldehyde.
  • Novolak-type phenolic resin obtained by condensation or cocondensation with a compound having an aldehyde group such as allylic bisphenol A, allylic bisphenol A, allylic bisphenol F, allylic naphthalenediol, phenol novolac, phenols and the like, and Examples thereof include phenol aralkyl resins and naphthol aralkyl resins synthesized from naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl. You may use these individually by 1 type or in combination of 2 or more types.
  • the content of the phenol resin may be 2 to 50% by mass based on the total amount of the adhesive layer.
  • the adhesive layer 40 includes, as other components, curing accelerators such as tertiary amines, imidazoles, and quaternary ammonium salts; aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, and silicic acid.
  • curing accelerators such as tertiary amines, imidazoles, and quaternary ammonium salts
  • Inorganic fillers such as magnesium, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica may be included.
  • the content of other components may be 0 to 20% by mass based on the total amount of the adhesive layer.
  • the plasma treatment is performed on a part or all of the surface of the pressure-sensitive adhesive layer 20 on the side opposite to the base material 10.
  • the adhesive layer 40 covers a part or all of the surface of the pressure-sensitive adhesive layer 20 on which the plasma treatment is performed. It may be formed so as to cover, or may be formed so as to cover a part or all of the surface of the pressure-sensitive adhesive layer 20 on which the plasma treatment is not performed.
  • the adhesive layer 40 is formed so as to cover part or all of both the surface of the pressure-sensitive adhesive layer 20 that has been subjected to the plasma treatment and the surface of the pressure-sensitive adhesive layer 20 that has not been subjected to the plasma treatment. May be.
  • the adhesive layer 40 may be formed so as to cover a part or all of the surface of the pressure-sensitive adhesive layer 20 on which the plasma treatment is performed.
  • the adhesive component is formed into a film and obtained.
  • the method of bonding the obtained film adhesive on the surface on the opposite side to the base material 10 of the pressure-sensitive adhesive layer 20A after the plasma treatment can be mentioned. In this way, the dicing die bonding integrated tape 130 can be obtained (see FIG. 2B).
  • the integrated dicing / die bonding tape 130 may include a protective material 50 on the surface of the adhesive layer 40 opposite to the pressure-sensitive adhesive layer 20A.
  • the protective material 50 is not particularly limited, and a protective film used in a dicing / die bonding integrated tape can be used.
  • the protective film include polyester films such as polyethylene terephthalate film, polytetrafluoroethylene films, polyethylene films, polypropylene films, polymethylpentene films, polyolefin films such as polyvinyl acetate films, polyvinyl chloride films, polyimide films, and the like. The plastic film etc. are mentioned.
  • the dicing die bonding integrated tape 140 with a protective material can be obtained (see FIG. 2C).
  • FIG. 3 is a cross-sectional view schematically showing one embodiment of a method for manufacturing a semiconductor device.
  • the manufacturing method of the semiconductor device according to the present embodiment includes a step of attaching the adhesive layer 40 of the dicing die bonding integrated tape 130 obtained by the above-described manufacturing method to the semiconductor wafer W (wafer laminating step, FIG. 3A). , (B)), and the step of dividing the semiconductor wafer W, the adhesive layer 40, and the pressure-sensitive adhesive layer (the pressure-sensitive adhesive layer 20A after the plasma treatment) into which the plasma treatment has been performed (dicing step, FIG.
  • the dicing die bonding integrated tape 130 is placed in a predetermined apparatus. Subsequently, the dicing / die bonding integrated tape 130 is attached to the main surface Ws of the semiconductor wafer W via the adhesive layer 40 (see FIGS. 3A and 3B).
  • the circuit surface of the semiconductor wafer W is preferably provided on the surface opposite to the main surface Ws.
  • the semiconductor wafer W, the adhesive layer 40, and the pressure-sensitive adhesive layer 20A after the plasma treatment are diced (see FIG. 3C). At this time, a part of the substrate 10 may be diced.
  • the dicing / die bonding integrated tape 130 also functions as a dicing sheet.
  • the pressure-sensitive adhesive layer 20A after the plasma treatment may be irradiated with ultraviolet rays (via the base material 10) as necessary (see FIG. 3D).
  • the base resin in the pressure-sensitive adhesive component is one that is cured by ultraviolet rays (ultraviolet curable base resin)
  • the pressure-sensitive adhesive layer 20A is cured, and the adhesive force between the pressure-sensitive adhesive layer 20A and the adhesive layer 40 is reduced. be able to.
  • the ultraviolet irradiation condition it is preferable to adjust the illuminance and the irradiation amount to a range of 30 to 240 mW / cm 2 and a range of 200 to 500 mJ / cm 2 , respectively.
  • the semiconductor element 60 with an adhesive layer includes a semiconductor element Wa and an adhesive layer 40a.
  • the semiconductor element Wa is obtained by dividing the semiconductor wafer W by dicing
  • the adhesive layer 40a is obtained by dividing the adhesive layer 40 by dicing.
  • the pressure-sensitive adhesive layer 20Aa is obtained by dividing the pressure-sensitive adhesive layer 20A after the plasma treatment by dicing.
  • the pressure-sensitive adhesive layer 20Aa can remain on the substrate 10 when the semiconductor element 60 with an adhesive layer is picked up. In the pick-up process, it is not always necessary to expand the base material 10, but the pick-up property can be further improved by expanding the base material 10.
  • the push-up amount by the needle 72 can be set as appropriate. Furthermore, from the viewpoint of ensuring sufficient pick-up performance even for an ultra-thin wafer, for example, two or three steps may be pushed up. Further, the semiconductor element 60 with an adhesive layer may be picked up by a method other than the method using the suction collet 74.
  • the semiconductor element 60 with the adhesive layer After picking up the semiconductor element 60 with the adhesive layer, the semiconductor element 60 with the adhesive layer is bonded to the semiconductor element mounting support substrate 80 via the adhesive layer 40a by thermocompression bonding (see FIG. 3F). .
  • a plurality of semiconductor elements 60 with an adhesive layer may be bonded to the semiconductor element mounting support substrate 80.
  • the manufacturing method of the semiconductor device according to the present embodiment includes a step of electrically connecting the semiconductor element Wa and the semiconductor element mounting support substrate 80 by a wire bond 70 as needed, and a step of A step of resin-sealing the semiconductor element Wa using the resin sealing material 92 may be further provided on the surface 80a.
  • FIG. 4 is a cross-sectional view schematically showing one embodiment of a semiconductor device.
  • the semiconductor device 200 shown in FIG. 4 can be manufactured through the above-described steps.
  • solder balls 94 may be formed on the surface opposite to the surface 80a of the semiconductor element mounting support substrate 80 for electrical connection with an external substrate (motherboard).
  • the processing method of the adhesive which concerns on one Embodiment is equipped with the process of implementing a plasma process with respect to an adhesive.
  • the pressure-sensitive adhesive may be the same as the pressure-sensitive adhesive exemplified in the above-described method for producing a pressure-sensitive adhesive sheet.
  • the plasma treatment may be the same as the plasma treatment exemplified in the above-described method for producing an adhesive sheet.
  • the plasma treatment may be a plasma treatment using atmospheric pressure plasma.
  • the treatment temperature of the plasma treatment may be less than the melting point of the adhesive.
  • the method for immobilizing an adherend includes a step of attaching a second adherend to the first adherend via the adhesive treated by the above-described method.
  • a metal adherend SUS, aluminum, etc.
  • a non-metal adherend polycarbonate, glass, etc.
  • the immobilization conditions for the adherend can be appropriately set according to the type of the pressure-sensitive adhesive and the types of the first and second adherends.
  • the peeling method of the adherend includes an interface between the first adherend and the adhesive, or an interface between the second adherend and the adhesive, which is fixed by the above-described method. At least one of these is treated with water (in contact with water), and the first adherend and the second adherend are separated.
  • the pressure-sensitive adhesive that has been subjected to plasma treatment has more hydrophilic groups than a pressure-sensitive adhesive that has not been subjected to plasma treatment, and tends to be easily peeled off by treatment with water (contact with water).
  • the adhesive may be attached to either the first adherend or the second adherend, It may be detached from the first adherend and the second adherend.
  • Example 1 [Production of adhesive sheet] ⁇ Preparation of adhesive sheet precursor> An acrylic resin having a hydroxyl group was obtained by polymerizing 2-ethylhexyl acrylate and methyl methacrylate as monomers, and hydroxyethyl acrylate and acrylic acid as monomers containing functional groups according to a solution polymerization method.
  • the acrylic resin having a hydroxyl group had a weight average molecular weight of 400,000 and a glass transition point of ⁇ 38 ° C.
  • the weight average molecular weight is as follows: SD-8022 / DP-8020 / RI-8020 manufactured by Tosoh Corporation as a GPC apparatus, Gelpack GL-A150-S / GL-A160-S manufactured by Hitachi Chemical Co., Ltd. as a column, and tetrahydrofuran as an eluent.
  • the polystyrene-converted weight average molecular weight (Mw) was measured.
  • the applicator on the base film A (polyethylene terephthalate film with a thickness of 38 ⁇ m), apply the resulting varnish for forming the adhesive layer while adjusting the gap so that the thickness of the pressure-sensitive adhesive layer is 10 ⁇ m. did.
  • the coated adhesive layer forming varnish is dried at 80 ° C. for 5 minutes, and then a base film B (polyolefin film having a thickness of 80 ⁇ m) having a surface subjected to corona treatment is laminated on the adhesive layer.
  • the adhesive sheet precursor having the structure of base film A / adhesive layer / base film B was obtained by allowing it to stand at room temperature (25 ° C.) for 2 weeks and performing sufficient aging.
  • the base film A of the pressure-sensitive adhesive sheet precursor is peeled off, and the base of the pressure-sensitive adhesive layer in the pressure-sensitive adhesive sheet precursor is obtained using an ultrahigh-density atmospheric pressure plasma unit (manufactured by Fuji Machine Manufacturing Co., Ltd., trade name: FPB-20 TYPE II).
  • the surface opposite to the material film B was subjected to plasma treatment to produce an adhesive sheet.
  • the protective material polyethylene terephthalate (PET) film
  • Example 2 Example 2 was performed in the same manner as in Example 1 except that the same plasma treatment as the plasma treatment performed on the pressure-sensitive adhesive layer (the number of repetitions: 1) was performed on the surface of the protective material on the pressure-sensitive adhesive layer side. An adhesive sheet with a protective material was obtained.
  • Example 3 A pressure-sensitive adhesive sheet with a protective material of Example 3 was obtained in the same manner as in Example 2 except that the number of repetitions of the plasma treatment of the protective material was changed from 1 to 4 times.
  • Example 4 A pressure-sensitive adhesive sheet with a protective material of Example 2 was obtained in the same manner as in Example 1 except that the number of repetitions of the plasma treatment of the pressure-sensitive adhesive layer was changed from 1 to 4.
  • Example 5 was performed in the same manner as Example 4 except that the same plasma treatment as the plasma treatment carried out on the pressure-sensitive adhesive layer (number of repetitions: 1) was performed on the surface of the protective material on the pressure-sensitive adhesive layer side. An adhesive sheet with a protective material was obtained.
  • Example 6 A pressure-sensitive adhesive sheet with a protective material of Example 6 was obtained in the same manner as in Example 5 except that the number of repetitions of the plasma treatment of the protective material was changed from 1 to 4 times.
  • Comparative Example 1 A pressure-sensitive adhesive sheet with a protective material of Comparative Example 1 was obtained in the same manner as Example 1 except that the plasma treatment was not performed on the pressure-sensitive adhesive layer.
  • the measurement conditions were such that the temperature was 23 to 28 ° C., the appropriate amount of the probe liquid was 1.5 ⁇ L, and the measurement timing was 5 seconds after the probe was properly applied.
  • the number of trials for measurement was 10 times, and the median value of the obtained values was determined as the contact angle ⁇ . The results are shown in Table 1.
  • the pressure-sensitive adhesive sheet with protective material of Examples 1 to 6 has a lower contact angle on the surface subjected to the plasma treatment of the pressure-sensitive adhesive layer than the pressure-sensitive adhesive sheet with protective material of Comparative Example 1.
  • the wettability was improved.
  • the peel strength with the protective material of Examples 1 and 2 was improved, and the adhesive strength was improved.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)
  • Laminated Bodies (AREA)
  • Medicinal Preparation (AREA)

Abstract

La présente invention concerne un procédé de fabrication d'une feuille adhésive, ledit procédé comprenant : une étape consistant à préparer un précurseur de feuille adhésive possédant un substrat et une couche adhésive disposée sur le substrat ; et une étape consistant à effectuer un traitement au plasma sur une surface de la couche adhésive sur le côté opposé au substrat dans le précurseur de feuille adhésive.
PCT/JP2019/022518 2018-06-08 2019-06-06 Procédé de fabrication d'une feuille adhésive, procédé de fabrication d'un ruban de découpage en puces/fixage de puces, procédé de fabrication d'un dispositif à semi-conducteur, procédé de traitement d'un adhésif, procédé d'immobilisation d'une partie adhérée et procédé de décollage d'une partie adhérée Ceased WO2019235562A1 (fr)

Priority Applications (5)

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KR1020207037539A KR102602484B1 (ko) 2018-06-08 2019-06-06 점착 시트의 제조 방법, 다이싱·다이본딩 일체형 테이프의 제조 방법, 반도체 장치의 제조 방법, 점착제의 처리 방법, 피착체의 고정화 방법, 및 피착체의 박리 방법
SG11202011944WA SG11202011944WA (en) 2018-06-08 2019-06-06 Method for manufacturing adhesive sheet, method for manufacturing dicing/die-bonding tape, method for manufacturing semiconductor device, method for treating adhesive, method for immobilizing adherend, and method for peeling adherend
CN201980038462.3A CN112272691B (zh) 2018-06-08 2019-06-06 压敏胶片的制造方法
JP2020523168A JP7283472B2 (ja) 2018-06-08 2019-06-06 粘着シートの製造方法、ダイシング・ダイボンディング一体型テープの製造方法、半導体装置の製造方法、粘着剤の処理方法、被着体の固定化方法、及び被着体の剥離方法
CN202310234425.8A CN116218389B (zh) 2018-06-08 2019-06-06 切晶粘晶一体型带的制造方法以及半导体装置的制造方法

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