WO2019139586A1

WO2019139586A1 - Magnetic polishing pad and platen structures for chemical mechanical polishing

Info

Publication number: WO2019139586A1
Application number: PCT/US2018/013252
Authority: WO
Inventors: Alexander Tregub
Original assignee: Intel Corp
Current assignee: Intel Corp
Priority date: 2018-01-11
Filing date: 2018-01-11
Publication date: 2019-07-18
Anticipated expiration: 2020-07-11

Abstract

Disclosed herein are chemical mechanical polishing (CMP) polishing pad and platen structures, and related systems and techniques. For example, in some embodiments, a CMP conditioning system may include a CMP polishing pad structure and a CMP platen structure, wherein the CMP polishing pad structure is magnetically coupled to the CMP platen structure.

Description

MAGNETIC POLISHING PAD AND PLATEN STRUCTURES FOR CHEMICAL MECHANICAL POLISHING

Background

[0001] Chemical mechanical polishing (CMP) typically includes rotating and translating a polishing pad on a wafer to remove material from the wafer and achieve a flat wafer surface. For example, a wafer may be polished to remove an oxide layer prior to a lithography step.

Brief Description of the Drawings

[0002] Embodiments will be readily understood by the following detailed description in conjunction with the accompanying drawings. To facilitate this description, like reference numerals designate like structural elements. Embodiments are illustrated by way of example, not by way of limitation, in the figures of the accompanying drawings.

[0003] FIG. 1 is a side view of a chemical mechanical polishing (CMP) system including a CMP polishing pad structure and a CMP platen structure, in accordance with various embodiments.

[0004] FIGS. 2-5 are side cross-sectional views of example CMP polishing pad structures, in accordance with various embodiments.

[0005] FIGS. 6A-6C are bottom views of example CMP polishing pad structures, in accordance with various embodiments.

[0006] FIGS. 7-12 are side cross-sectional views of example CMP platen structures, in accordance with various embodiments.

[0007] FIG. 13 is a flow diagram of a method of manufacturing a CMP polishing pad structure, in accordance with various embodiments.

[0008] FIG. 14 is a flow diagram of a method of manufacturing a CMP platen structure, in accordance with various embodiments.

[0009] FIG. 15 is a flow diagram of a method of using a CMP system, in accordance with various embodiments.

[0010] FIG. 16 is a top view of a wafer and dies that may be processed using CMP systems and techniques in accordance with any of the embodiments disclosed herein.

[0011] FIG. 17 is a cross-sectional side view of an integrated circuit (1C) device that may be processed using CMP systems and techniques in accordance with any of the embodiments disclosed herein.

[0012] FIG. 18 is a cross-sectional side view of an 1C package that may include components that may be processed using CMP systems and techniques in accordance with any of the embodiments disclosed herein. [0013] FIG. 19 is a cross-sectional side view of an 1C device assembly that may include components that may be processed using CMP systems and techniques in accordance with any of the embodiments disclosed herein.

[0014] FIG. 20 is a block diagram of an example electrical device that may include components that may be processed using CMP systems and techniques in accordance with any of the embodiments disclosed herein.

Detailed Description

[0015] Disclosed herein are chemical mechanical polishing (CMP) polishing pad and platen structures, and related systems and techniques. For example, in some embodiments, a CMP system may include a CMP polishing pad structure and a CM P platen structure, wherein the CMP polishing pad structure is magnetically coupled to the CMP platen structure.

[0016] In the following detailed description, reference is made to the accompanying drawings that form a part hereof, and in which are shown, by way of illustration, embodiments that may be practiced. It is to be understood that other embodiments may be utilized, and structural or logical changes may be made, without departing from the scope of the present disclosure. Therefore, the following detailed description is not to be taken in a limiting sense.

[0017] Various operations may be described as multiple discrete actions or operations in turn, in a manner that is most helpful in understanding the claimed subject matter. Flowever, the order of description should not be construed as to imply that these operations are necessarily order dependent. In particular, these operations may not be performed in the order of presentation. Operations described may be performed in a different order from the described embodiment. Various additional operations may be performed, and/or described operations may be omitted in additional embodiments.

[0018] For the purposes of the present disclosure, the phrase "A and/or B" means (A), (B), or (A and B). For the purposes of the present disclosure, the phrase "A, B, and/or C" means (A), (B), (C), (A and B), (A and C), (B and C), or (A, B, and C). The term "between," when used with reference to measurement ranges, is inclusive of the ends of the measurement ranges. For convenience, the collection of drawings of FIGS. 6A-6C may be referred to herein as "FIG. 6."

[0019] The description uses the phrases "in an embodiment" or "in embodiments," which may each refer to one or more of the same or different embodiments. Furthermore, the terms "comprising," "including," "having," and the like, as used with respect to embodiments of the present disclosure, are synonymous. The disclosure may use perspective-based descriptions such as "above," "below," "top," "bottom," and "side"; such descriptions are used to facilitate the discussion and are not intended to restrict the application of disclosed embodiments. [0020] In the drawings, some schematic illustrations of exemplary structures of various devices and assemblies described herein may be shown with precise right angles and straight lines, but it is to be understood that such schematic illustrations may not reflect real-life process limitations which may cause the features to look less "ideal" when any of the structures described herein are examined (e.g., using scanning electron microscopy (SEM) images or transmission electron microscope (TEM) images). In images of real structures, possible processing defects could also be visible, such as not- perfectly straight edges of materials, tapered vias or other openings, rounding of corners, variations in thicknesses of different material layers, occasional dislocation defects of single atoms or clusters of atoms, and/or occasional screw, edge, or combination dislocations within crystalline regions. There may be other defects not listed here but that are common within the field of tool

manufacturing and device fabrication. The accompanying drawings are not necessarily drawn to scale.

[0021] Although dimensions and material compositions of various elements disclosed herein may be described with reference to a particular figure or embodiment, these dimensions and material compositions may apply to like elements in any other figure or embodiment, unless otherwise indicated. The terms "substantially," "close," "approximately," "near," or "about," may generally refer to being within +/- 20% of a target value based on the context of a particular value as described herein or as known in the art. Similarly, terms indicating relative orientation of various elements, such as "coplanar," "perpendicular," "orthogonal," "parallel," or any other angle between the elements, may generally refer to being within +/- 5-10% of a target value based on the context of a particular value as described herein or as known in the art.

[0022] FIG. 1 is a side view of a CMP system 150 including a CMP polishing pad structure 100 disposed on a CMP platen structure 154, in accordance with various embodiments. The CMP polishing pad structure 100 may be magnetically coupled to the CMP platen structure 154. In particular, the CMP polishing pad structure 100 may have a polishing surface 108 and an opposing platen-facing surface 110, and the CMP platen structure 154 may include a pad-facing surface 118 and an opposing surface 119. The platen-facing surface 110 of the CMP polishing pad structure 100 may be in contact with the platen-facing surface 118 of the CMP platen structure 154. In some embodiments, the polishing surface 108 of the CMP polishing pad structure 100 may include grooves or other features. A number of examples of magnetic CMP polishing pad structures 100 and CMP platen structures 154 are discussed in detail herein.

[0023] The CMP platen structure 154 may include mechanical linkages to allow the CMP polishing pad structure 100 to translate "up and down" to bring the CMP polishing pad structure 100 into contact with the CMP conditioning disk 158 and/or an object 160 (discussed below). In some embodiments, the platen structure 154 may include mechanical linkages to allow the CMP polishing pad structure 100 to translate "side to side" while in contact with the CMP conditioning disk 158 and/or the object 160. In some embodiments, the platen structure 154 may include a rotor to allow the CMP polishing pad structure 100 to rotate while in contact with the CMP conditioning disk 158 and/or the object 160. In various embodiments, the CMP system 150 may include control circuitry (not shown) to allow a user to control the rotation rate of the CMP polishing pad structure 100, the "side to side" translation of the CMP polishing pad structure 100, and/or other operational properties of the CMP system 150, as noted above. In some embodiments, such control circuitry may be part of the control circuitry 124 discussed below with reference to FIGS. 11 and 12.

[0024] The CMP system 150 may include an object 160 disposed on an arm 156. In some embodiments, the object 160 may be a wafer (e.g., a semiconductor or metal wafer), an assembly including integrated circuit (1C) components (e.g., dies, package substrates, or interposers) disposed on the panel or other support, or any other object to be polished. The object 160 may have any suitable dimensions. For example, in some embodiments, the object 160 may be a wafer that is 200, 300, or 450 millimeters in diameter. The object 160 may be secured to the arm 156 using any suitable mechanism, such as vacuum, a clamp, a frame, or mechanical fasteners, for example. In some embodiments, the object 160 (e.g., a wafer) may be disposed in a retainer ring to control the "side to side" movement of the object 160, and vacuum force may be used to hold the object 160 against the arm 156 to control the "up and down" movement of the object 160. The arm 156 may include mechanical linkages to allow the object 160 to translate "up and down" to bring the object 160 into contact with the polishing surface 108 of the CMP polishing pad structure 100. In some embodiments, the arm 156 may include mechanical linkages to allow the object 160 to translate "side to side" while in contact with the polishing surface 108 of the CMP polishing pad structure 100. In some embodiments, the arm 156 may include a rotor to allow the object 160 to rotate while in contact with the CMP polishing pad structure 100. In various embodiments, the CMP system 150 may include control circuitry (not shown) to allow a user to control the rotation rate of the object 160, the "side to side" translation of the object 160, the downward force exerted by the arm 156 on the CMP polishing pad structure 100, and/or other operational properties of the CMP system 150, as noted above.

[0025] When the object 160 is brought into contact with the polishing surface 108 of the CMP polishing pad structure 100, and the two are rotated (and/or translated) relative to one another, the CMP polishing pad structure 100 may remove material from the object 160 and thereby polish the object 160. A slurry 162 may be disposed on the polishing surface 108 of the CMP polishing pad structure 100. When the object 160 is brought into contact with the CMP polishing pad structure 100, and the two are rotated (and/or translated) relative to one another, the slurry 162 may flow between the polishing surface 108 of the CMP polishing pad structure 100 and the object 160 to facilitate the polishing of the object 160. In some embodiments, a retainer ring holding the object 160 on the arm 156 may include grooves to allow the slurry 162 to flow to the object 160 and away from the object 160 during polishing. The slurry 162 may also flow through grooves in the polishing surface 108 of the CMP polishing pad structure 100 formed by the CMP conditioning disk 158. The slurry 162 may take any suitable form known in the art (e.g., an oxide slurry). Control circuitry (not shown) included in the CMP system 150 may control the rate of flow of the slurry 162 from a slurry source (not shown) in some embodiments.

[0026] A magnetic coupling between the CMP polishing pad structure 100 and the CMP platen structure 154 may exhibit less or no degradation in the presence of the slurry 162 and other CMP waste products than conventional adhesive couplings between a conventional CMP polishing pad and a conventional CMP platen. In conventional systems, the slurry 162 may degrade the adhesive to such a degree that a conventional CMP polishing pad is no longer adequately secured to the conventional CMP platen, resulting in partial or complete delamination between the CMP polishing pad and platen (often in an unpredictable manner), damage to the CMP system, and/or damage to the wafer or other object being polished. Further, conventional CMP systems require that the pad- platen adhesive be cleaned off the CMP platen with organic solvents as part of the pad change process, incurring tool downtime, process costs (for example, due to the highly skilled manual labor required for accurate alignment and the cost of wasting pads that are misaligned), and potentially negative consequences for technician health. A magnetic coupling between the CMP polishing pad structure 100 and the CMP platen structure 154 may mitigate or eliminate the adhesive degradation issue, and may mitigate or eliminate the need for costly cleaning. Additionally, once a conventional adhesive CMP polishing pad has been removed from a conventional platen, that CMP polishing pad is no longer usable because its adhesive has been compromised, regardless of whether its polishing surface is still adequate for performing polishing. A particular consequence of this limitation is that conventional CMP polishing pads cannot be repositioned once initially placed on a conventional CMP platen. Various ones of the magnetic CMP polishing pad structures 100 disclosed herein do not suffer from such limitations, and may be reused on the same or different CMP platen structures 154. Further, by controlling the magnetic strength and pattern of the CMP polishing pad structures 100 and the CMP platen structures 154 disclosed herein, the force of magnetic interaction between the CMP polishing pad structures 100 and the CMP platen structures 154 may be controlled and adjusted for suitability to a particular CMP task. [0027] The CMP system 150 may include a CMP conditioning disk 158 disposed on an arm 152. The CMP conditioning disk 158 may include a bulk material, such as plastic, metal, or ceramic material, and may have an abrasive material at its surface. In some embodiments, the bulk material of the CMP conditioning disk 158 may be formed of a material that may be used as a substrate for growing an abrasive material for the abrasive surface using chemical vapor deposition. For example, in some embodiments, the bulk material may include a carbon- or silicon-based composite material, such as silicon carbide, and the abrasive surface may include chemical vapor deposition-grown diamond.

The CMP conditioning disk 158 may be secured to the arm 152 using any suitable mechanism, such as vacuum, a clamp, a frame, or mechanical fasteners, for example. The arm 152 may include mechanical linkages to allow the CMP conditioning disk 158 to translate "up and down" to bring the CMP conditioning disk 158 into contact with the polishing surface 108 of the CMP polishing pad structure 100 (discussed below). In some embodiments, the arm 152 may include mechanical linkages to allow the CMP conditioning disk 158 to translate "side to side" while in contact with the polishing surface 108 of the CMP polishing pad structure 100. In some embodiments, the arm 152 may include a rotor to allow the CMP conditioning disk 158 to rotate while in contact with the CMP polishing pad structure 100. The arm 152 may include, for example, a head, as known in the art. In various embodiments, the CMP system 150 may include control circuitry (not shown) to allow a user to control the rotation rate of the CMP conditioning disk 158, the downward force ("downforce") exerted by the CMP conditioning disk 158 on the CMP polishing pad structure 100, the "side to side" translation of the CMP conditioning disk 158, and/or other operational properties of the CMP system 150.

[0028] When the CMP conditioning disk 158 is brought into contact with the polishing surface 108 of the CMP polishing pad structure 100, and the two are rotated (and/or translated) relative to one another, the abrasive surface of the CMP conditioning disk 158 may "dig" into the surface of the CMP polishing pad structure 100 and create grooves in the CMP polishing pad structure 100.

[0029] In some embodiments, the CMP conditioning disk 158 may be used to condition the polishing surface 108 of the CMP polishing pad structure 100 simultaneously with the CMP polishing pad structure 100 polishing the object 160. That is, the CMP conditioning disk 158 may be in contact with (and rotated relative to) the CMP polishing pad structure 100 at the same time that the object 160 may be in contact with (and rotated relative to) the CMP polishing pad structure 100. In other embodiments, the CMP polishing pad structure 100 may be conditioned by the CMP conditioning disk 158 before and/or after (but not simultaneously with) polishing the object 160 using the CMP polishing pad structure 100. [0030] As noted above, the CMP polishing pad structure 100 and the CMP platen structure 154 may be magnetically coupled. In particular, attractive magnetic forces between the CMP polishing pad structure 100 and the CMP platen structure 154 may keep the CMP polishing pad structure 100 secured in place on the CMP platen structure 154 during polishing of the object 160. A magnetic CMP polishing pad structure 100 may take any of a number of forms, several of which are illustrated in FIGS. 2-6.

[0031] FIG. 2 illustrates an embodiment of a CMP polishing pad structure 100 including a CMP polishing pad 102 coupled to a magnetic material 106 by an adhesive 104. In some embodiments, the CMP polishing pad 102 of FIGS. 2-3 may not itself be magnetic; in other embodiments, the CMP polishing pad 102 may have some magnetism, but not enough to adequately secure the CMP polishing pad 102 to the CMP platen structure 154. A CMP polishing pad 102 may be formed from a porous material, such as a hard elastomer or a polyurethane-based material. In some embodiments, the CMP polishing pad 102 may include an elastomeric polymer, such as rubber. The CMP polishing pad 102 may include other additives to achieve a desired porosity, as known in the art. Different CMP polishing pads 102 may have different mechanical properties, such as hardness (e.g., with "soft" pads having a hardness between 10 megapascals and 20 megapascals, and "hard" pads having a hardness between 200 megapascals and 1500 megapascals). In some embodiments, the CMP polishing pad 102 may have a thickness 103 between 25 mils and 100 mils.

[0032] In the CMP polishing pad structure 100 of FIG. 2, the magnetic material 106 may include any suitable magnetic material. In some embodiments, the magnetic material 106 may include iron. In some embodiments, the magnetic material 106 may include a rare earth metal, such as neodymium. In some embodiments, the magnetic material 106 may include cobalt or nickel. In some

embodiments, the magnetic material 106 may include any suitable combination of magnetic materials and optionally non-magnetic materials. For example, in some embodiments, the magnetic material 106 may include neodymium, iron, and boron. In some embodiments, the magnetic material 106 may include steel. In some embodiments, the magnetic material 106 may be provided by a ceramic magnet including a magnetic material and a ceramic material. In some embodiments, the magnetic material 106 may be provided by a magnetic polymer including a magnetic material and a polymer material (e.g., a magnetic polymer tape, as discussed below). In some embodiments, the magnetic material 106 may have a coating, such as a nickel plating. In some embodiments, the magnetic material 106 may be provided in a casing; for example, the magnetic material 106 may include a ceramic magnet in a steel casing.

[0033] The adhesive 104 may have any suitable material composition. For example, in some embodiments, the adhesive 104 may include a foam tape. In some embodiments, the adhesive 104 may include a pressure-sensitive adhesive that is provided on the "platen-facing" side of the CMP polishing pad 102 when the CMP polishing pad 102 is initially manufactured (e.g., by co-extrusion or another manufacturing process); the magnetic material 106 may be adhered to the CMP polishing pad 102 using this pressure-sensitive adhesive.

[0034] In some embodiments, the magnetic material 106 may include a flexible magnetic tape that includes a magnetic material and a polymer material, and is manufactured in rolls or sheets. Such magnetic tape may or may not be manufactured with its own adhesive; and embodiments in which the magnetic material 106 is provided by a magnetic tape that does include its own adhesive, that adhesive may provide (or may be part of) the adhesive 104 of the CMP polishing pad structure 100 of FIG. 2. For example, when the magnetic material 106 includes a magnetic tape, the adhesive 104 between the magnetic tape and the CMP polishing pad 102 may include: a pressure-sensitive adhesive provided with the CMP polishing pad 102 during manufacture (as discussed above); an adhesive provided with the magnetic tape during manufacture; a pressure-sensitive adhesive provided with CMP polishing pad 102 during manufacture and an adhesive provided with a magnetic tape during manufacture; or a separately provided adhesive (e.g., a glue or tape). In some embodiments, the magnetic material 106 may be a rigid magnet; such a rigid magnet may or may not be manufactured with its own adhesive, and thus the adhesive 104 may take any of the forms discussed above with reference to the magnetic tape.

[0035] The thickness 107 of the magnetic material 106 may take any suitable value. For example, in some embodiments, the thickness 107 of the magnetic material 106 may be between 0.02 inches and 0.75 inches (e.g., between 0.1 inches and 0.75 inches).

[0036] FIG. 3 illustrates an embodiment of a CMP polishing pad structure 100 including a CMP polishing pad 102 coupled to a magnetic material 106 without an intervening adhesive 104. In some settings, a CMP polishing pad structure 100 that does not include an adhesive 104 may exhibit further robustness to chemical degradation caused by the slurry 162, relative to embodiments of the CMP polishing pad structures 100 that do include an adhesive 104. The CMP polishing pad 102 and the magnetic material 106 of the embodiment of FIG. 3 may take any of the forms discussed above with reference to FIG. 2. In some embodiments of the CMP polishing pad structure 100 of FIG. 3, the magnetic material 106 may be co-laminated with the CMP polishing pad 102. For example, when the magnetic material 106 includes a polymer (e.g., the magnetic material 106 is a magnetic tape) and the CMP polishing pad 102 includes an appropriate polymer, heat and/or pressure applied by converter equipment (or other suitable equipment) may cause polymer melting between the CMP polishing pad 102 and the magnetic material 106; cooling the materials may cause polymer recrystallization and the formation of a bond between the magnetic material 106 and the CMP polishing pad 102.

[0037] In some embodiments of the CMP polishing pad structure 100 of FIG. 3, the magnetic material 106 may be deposited on the CMP polishing pad 102. For example, a metallization technique may be performed on the CMP polishing pad 102 to provide the magnetic material 106. Example metallization techniques that may be performed include physical vapor deposition, arc spraying, flame spraying, electroless plating, or electroplating. In some embodiments, a magnetic material 106 formed by deposition on the CMP polishing pad 102 may include nickel.

[0038] FIG. 4 illustrates an embodiment of a CMP polishing pad structure 100 in which a magnetic material 106 is incorporated into a non-magnetic material 116 of a CMP polishing pad 102. For example, in some embodiments, the CMP polishing pad 102 of FIG. 4 may include a polymeric material 116 in which particles (e.g., powder, filaments, pellets, etc.) of a magnetic material 106 are disposed. The magnetic material 106 may include any of the materials discussed above (e.g., nickel, cobalt, iron, neodymium, etc.). A CMP polishing pad 102 including a magnetic material 106 may be formed using any suitable technique. For example, in some embodiments, such a CMP polishing pad 102 may be formed by combining the non-magnetic material 116 (e.g., one or more polymers) and the magnetic material 106 (e.g., pellets of a magnetic powder including neodymium and/or iron) and using the material mixture to form the CMP polishing pad 102. In some embodiments, an additive manufacturing process, such as three-dimensional printing, may be used to form the material mixture into a CMP polishing pad 102. In some embodiments, a molding process (including, e.g., injection molding and/or compression molding) may be used to form the material mixture into a CMP polishing pad 102.

[0039] FIG. 4 illustrates an embodiment in which the magnetic material 106 is fairly uniformly distributed throughout the non-magnetic material 116 of the CMP polishing pad 102. In other embodiments, the magnetic material 106 may not be uniformly distributed throughout the thickness (i.e., in the z-direction) and/or width (i.e., in the x-y directions) of the CMP polishing pad 102. For example, FIG. 5 illustrates an embodiment of a CMP polishing pad structure 100 in which the magnetic material 106 is not uniformly distributed through the thickness of the CMP polishing pad 102, but instead is more heavily distributed closer to the platen-facing surface 110 of the CMP polishing pad 102 than to the polishing surface 108 of the CMP polishing pad 102. In some embodiments, the magnetic material 106 may be distributed through the non-magnetic material 116 of the CMP polishing pad 102 according to a concentration gradient that decreases from the platen-facing surface 110 to the polishing surface 108. Such a concentration gradient may be smooth or stepped. For example, in some embodiments of a step concentration gradient, the CMP polishing pad 102 may include the magnetic material 106 to a particular chosen distance from the platen-facing surface 110, and may not include any magnetic material 106 and the remainder of the CM P polishing pad 102. Any of the techniques discussed above with reference to FIG. 4 may be used to manufacture the CM P polishing pad structure 100 of FIG. 5. For example, an additive

manufacturing technique may be used to form the CMP polishing pad structure 100 of FIG. 5; the composition of the material mixture used during the additive manufacturing may be changed to adjust the amount and location of the magnetic material 106 as desired.

[0040] As noted above, in various embodiments of the CMP polishing pad structures 100 disclosed herein, the location of magnetic material 106 in the CMP polishing pad structure 100 may not be uniform throughout the thickness of the CMP polishing pad structure 100. Similarly, in various embodiments of the CMP polishing pad structures 100 disclosed herein, the location of magnetic material 106 in a CMP polishing pad structure 100 may not be uniform in the x-y directions of the CM P polishing pad structure 100. For example, FIGS. 6A-6C are views of the platen-facing surfaces 110 of various embodiments of CMP polishing pad structures 100, illustrating different distributions of magnetic material 106 in the x-y directions of the structures 100. In particular, FIG. 6A illustrates an embodiment in which the magnetic material 106 is substantially uniformly distributed relative to the platen-facing surface 110 (e.g., on the platen-facing surface 110, as discussed above with reference to the embodiments of FIGS. 2-3, or through the CM P polishing pad 102, as discussed above with reference to the embodiments of FIGS. 4-5). FIGS. 6B and 6C illustrate embodiments in which the magnetic material 106 is not uniformly distributed, but instead is patterned. For example, FIG. 6B illustrates an embodiment in which the magnetic material 106 is arranged in parallel stripes relative to the platen-facing surface 110, and FIG. 6C illustrates an embodiment in which the magnetic material 106 is arranged in substantially circular areas around the perimeter of the CM P polishing pad structure 100 relative to the platen-facing surface 110. These particular patterns are simply illustrative, and any desired pattern of magnetic material 106 may be used. Further, any of the manufacturing techniques disclosed herein for manufacturing a CM P polishing pad structure 100 may be used to achieve a patterned magnetic material 106.

[0041] As noted above, a magnetic CMP polishing pad structure 100 may couple to a magnetic CMP platen structure 154 and a CMP system 150. A magnetic CMP platen structure 154 may take any of a number of forms, several of which are illustrated in FIGS. 7-12. The magnetic material 106 included in any of the CMP platen structures 154 discussed herein may be patterned in any of the ways discussed above with reference to the patterned magnetic material 106 of the CMP polishing pad structures 100 (e.g., discussed above with reference to FIG. 6). In some embodiments, the patterning of the magnetic material 106 in a CMP platen structure 154 may be complementary to the patterning of the magnetic material 106 in a CMP polishing pad structure 100 so as to help achieve a desired alignment between the CMP platen structure 154 and the CMP polishing pad structure 100. In some embodiments, the pattern of the magnetic material 106 in a CMP platen structure 154 may be different from the pattern of the magnetic material 106 in a CMP polishing pad structure 100; for example, the CMP platen structure 154 may have its magnetic material 106 patterned as illustrated in FIG. 6B or FIG. 6C, while the CMP polishing pad structure 100 may have its magnetic material 106 arranged as illustrated in FIG. 6A.

[0042] FIG. 7 illustrates an embodiment of the CMP platen structure 154 including a CMP platen 120 including a magnetic material 106. In particular, the CMP platen 120 of the embodiment of FIG. 7 may be partially or entirely formed of the magnetic material 106. In some embodiments, the magnetic material 106 may be steel. In some embodiments, the magnetic material 106 may be a ceramic magnet. In some embodiments, the CMP platen 120 may include iron, nickel, or cobalt. In some embodiments, the CMP platen 120 may be formed of portions of magnetic material 106 (e.g., iron, nickel, or cobalt) arranged in a desired pattern and embedded in or surrounded by a non magnetic material (e.g., aluminum). Aluminum may be a desirable material for the CMP platen 120 due at least in part to its lower weight relative to other materials (e.g., stainless steel).

[0043] FIG. 8 illustrates an embodiment of a CMP polishing pad structure 100 including a CMP platen 120 coupled to a magnetic material 106 by an adhesive 104. In some embodiments, the CMP platen 120 of the embodiment of FIGS. 8-9 and 11-12 may not itself be magnetic; in other embodiments, the CMP platen 120 may have some magnetism, but not enough to adequately secure the CMP polishing pad 102 to the CMP platen structure 154. For example, the CMP platen 120 may be formed of aluminum or another non-magnetic metal.

[0044] In the CMP platen structure 154 of FIG. 8, the magnetic material 106 may include any suitable magnetic material, such as any of the magnetic materials 106 discussed above. The adhesive 104 of the embodiment of FIG. 8 may have any suitable material composition, such as any of the adhesives 104 discussed above. For example, in some embodiments, the adhesive 104 may include a foam tape, a glue, or an adhesive that accompanies the magnetic material 106 (e.g., the adhesive on a surface of a polymeric magnetic tape or rigid magnet). For example, in some embodiments, the CMP platen structure 154 may include multiple parallel stripes of magnetic tape adhered to the surface of an aluminum CMP platen 120.

[0045] FIG. 9 illustrates an embodiment of a CMP platen structure 154 including a CMP platen 120 coupled to a magnetic material 106 without an intervening adhesive 104. In some settings, a CMP platen structure 154 that does not include an adhesive 104 may exhibit further robustness to chemical degradation caused by the slurry 162, relative to embodiments of the CMP polishing platen structures 154 that do include an adhesive 104. In some embodiments of the CMP platen structure 154 of FIG. 9, the magnetic material 106 may be deposited on the CMP platen 120 (e.g., an aluminum CMP platen 120) using a metallization technique. Example metallization techniques that may be performed include physical vapor deposition (e.g., sputtering), chemical vapor deposition, atomic layer deposition, arc spraying, flame spraying, electroless plating, or electroplating. In some embodiments, the magnetic material 106 may include iron oxide coated on an aluminum CMP platen 120. In some embodiments, the magnetic material 106 may include nickel or cobalt plated on a CMP platen 120 (e.g., an aluminum CMP platen 120). In some embodiments, the magnetic material 106 may include iron, nickel, or cobalt that is vacuum deposited onto a CMP platen 120 (e.g., an aluminum CMP platen 120). In some embodiments, the magnetic material 106 may include a material stack including alternating layers of a non-permanent magnetic material (e.g., copper and manganese) with layers of buckminsterfullerenes; upon exposure to a magnetic field, such a material stack may exhibit permanent magnetism, as known in the art.

[0046] FIG. 10 illustrates an embodiment of a CMP platen structure 154 in which a magnetic material 106 is incorporated into a non-magnetic material 126 of a CMP platen 120. For example, in some embodiments, the CMP platen 120 of FIG. 10 may include a polymeric or other non-magnetic material 126 in which particles (e.g., powder, filaments, pellets, etc.) of a magnetic material 106 are disposed. The magnetic material 106 may include any of the materials discussed above (e.g., nickel, cobalt, iron, neodymium, etc.). A CMP platen 120 including a magnetic material 106 may be formed using any suitable technique. For example, in some embodiments, such a CMP platen 120 may be formed by combining the non-magnetic material 126 (e.g., one or more polymers or other metals) and the magnetic material 106 (e.g., pellets of a magnetic powder including neodymium and/or iron) and using the material mixture to form the CMP platen 120. In some embodiments, an additive manufacturing process, such as three-dimensional printing, may be used to form the material mixture into a CMP platen 120. In some embodiments, a molding process (including, e.g., injection molding and/or compression molding) may be used to form the material mixture into a CMP platen 120. Although FIG. 10 illustrates an embodiment in which the magnetic material 106 is substantially uniformly distributed throughout the non-magnetic material 126 of the CMP platen 120, in other embodiments, the magnetic material 106 may not be uniformly distributed in the z-direction. For example, the magnetic material 106 may be more heavily distributed closer to the pad-facing surface 118 than to the opposing surface 119. Any of the embodiments of the gradient of the magnetic material 106 in the CMP polishing pad 102 discussed above may be applied analogously to embodiments of the CMP platen 120. [0047] In some embodiments, the CMP platen 120 may or may not include a magnetic material, and an electromagnet 135 may be coupled to the CMP platen 120 in the CMP platen structure 154. FIG. 11 depicts an embodiment in which an electromagnet 135 (in a housing 122) is coupled to the pad facing surface 118 of the CMP platen 120, and FIG. 12 depicts an embodiment in which an electromagnet 135 (in a housing 122) is coupled to the opposing surface 119 of the CMP platen 120. The electromagnet 135 may include one or more electromagnetic coils (in any desired arrangement), and may be coupled to control circuitry 124 that controls the current provided to the electromagnet 135. Providing a current through the electromagnet 135 with the control circuitry 124 may cause the electromagnet 135 to generate a magnetic field that attracts the CMP polishing pad structure 100 with a force sufficient to couple the CMP polishing pad structure 100 to the CMP platen 120 during operation of the CMP system 150. The strength of the magnetic field generated by the electromagnet 135 may be adjusted by controlling the electrical signals provided to the

electromagnet 135 by the control circuitry 124, as known in the art. Thus, the CMP platen structures 154 of FIGS. 11 and 12 may be used with CMP polishing pad structures 100 having different magnetic strengths; the magnetic strength of the CMP platen structures 154 may be adjusted to achieve adequate coupling with the different CMP polishing pad structures 100.

[0048] FIG. 13 is a flow diagram of a method 700 of manufacturing a CMP polishing pad structure, in accordance with various embodiments. Although various operations are arranged in a particular order, and illustrated once each, in FIG. 13 (and other ones of the accompanying flow diagrams), various ones of the operations may be repeated or performed in any suitable order.

[0049] At 702, an initial CMP polishing pad may be provided. For example, an initial polishing pad 102 may be manufactured or obtained.

[0050] At 704, a magnetic material may be introduced to the initial CMP polishing pad. For example, a magnetic material 106 may be laminated, deposited, glued, driven into, or otherwise introduced to the initial polishing pad 102 (e.g., in accordance with any of the embodiments disclosed herein).

[0051] FIG. 14 is a flow diagram of a method 800 of manufacturing a CMP platen structure, in accordance with various embodiments.

[0052] At 802, an initial CMP platen may be provided. For example, an initial CMP platen 120 may be manufactured, assembled, or obtained.

[0053] At 704, a magnetic material may be introduced to the initial CMP platen, or an

electromagnetic may be coupled to the initial CMP platen. For example, a magnetic material 106 may be laminated, deposited, glued, driven into, or otherwise introduced to the initial CMP platen 120, or an electromagnetic 135 may be coupled to the initial CMP platen 120 (e.g., in accordance with any of the embodiments disclosed herein).

[0054] FIG. 15 is a flow diagram of a method 900 of using a CMP system, in accordance with various embodiments.

[0055] At 902, a CMP polishing pad structure may be magnetically coupled to a CMP platen structure. For example, a CMP polishing pad structure 100 may be magnetically coupled to a CMP platen structure 154 (e.g., in accordance with any of the embodiments disclosed herein). In some embodiments, a CMP polishing pad structure 100 may be placed on a CMP platen structure 154 by a technician in an initial location, and the CMP polishing pad structure 100 may be shifted or repositioned on the CMP platen structure 154 until a desired alignment is achieved without compromising the CMP polishing pad structure 100 or the CMP platen structure 154.

[0056] At 904, an object may be brought into contact with the CMP polishing pad structure. For example, the object 160 (e.g., a wafer) may be brought into contact with the CMP polishing pad structure 100 of the CMP system 150 (in which the CMP polishing pad structure 100 is magnetically coupled to the CMP platen structure 154).

[0057] At 906, the CMP polishing pad structure may be rotated to polish the object. For example, the object 160 and the CMP polishing pad structure 100 of the CMP system 150 may be rotated and/or translated relative to one another (e.g., using the arm 152 and the CMP platen structure 154) to polish the object 160. In some embodiments, after the object is polished by the CMP polishing pad structure, the CMP polishing pad structure may be removed from the CMP platen structure and positioned on the same or different CMP platen structure later to perform further polishing.

[0058] Devices processed using the CMP systems and techniques disclosed herein (e.g., polished by CMP polishing pad structures on the CMP platen structures disclosed herein) may be included in any suitable electronic device. FIGS. 16-20 illustrate various examples of apparatuses that may include components processed using the CMP systems and techniques disclosed herein.

[0059] FIG. 16 provides top views of a wafer 1500 and dies 1502 that may be processed using CMP systems and techniques in accordance with any of the embodiments disclosed herein. In particular, the wafer 1500 may be the object 160 polished in the CMP system 150 of FIG. 1. The wafer 1500 may be composed of semiconductor material and may include one or more dies 1502 having 1C structures formed on a surface of the wafer 1500. Each of the dies 1502 may be a repeating unit of a semiconductor product that includes any suitable 1C. After the fabrication of the semiconductor product is complete, the wafer 1500 may undergo a singulation process in which the dies 1502 are separated from one another to provide discrete "chips" of the semiconductor product. In particular, devices processed using the CMP systems and techniques disclosed herein may take the form of the wafer 1500 and/or the dies 1502. The die 1502 may include one or more transistors (e.g., some of the transistors 1640 of FIG. 17, discussed below) and/or supporting circuitry to route electrical signals to the transistors, as well as any other 1C components. In some embodiments, the wafer 1500 or the die 1502 may include a memory device (e.g., a random access memory (RAM) device, such as a static RAM (SRAM) device, a magnetic RAM (M RAM) device, a resistive RAM (RRAM) device, a conductive-bridging RAM (CBRAM) device, etc.), a logic device (e.g., an AND, OR, NAND, or NOR gate), or any other suitable circuit element. Multiple ones of these devices may be combined on a single die 1502. For example, a memory array formed by multiple memory devices may be formed on a same die 1502 as a processing device (e.g., the processing device 1802 of FIG. 20) or other logic that is configured to store information in the memory devices or execute instructions stored in the memory array.

[0060] FIG. 17 is a cross-sectional side view of an 1C device 1600 that may components processed in accordance with any of the CMP systems and techniques disclosed herein. One or more of the 1C devices 1600 may be included in one or more dies 1502 (FIG. 16). The 1C device 1600 may be formed on a substrate 1602 (e.g., the wafer 1500 of FIG. 16) and may be included in a die (e.g., the die 1502 of FIG. 16). The substrate 1602 may be a semiconductor substrate composed of semiconductor material systems including, for example, n-type or p-type materials systems (or a combination of both). The substrate 1602 may include, for example, a crystalline substrate formed using a bulk silicon or a silicon-on-insulator (SOI) substructure. In some embodiments, the substrate 1602 may be formed using alternative materials, which may or may not be combined with silicon, that include but are not limited to germanium, indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide, or gallium antimonide. Further materials classified as group ll-VI, lll-V, or IV may also be used to form the substrate 1602. Although a few examples of materials from which the substrate 1602 may be formed are described here, any material that may serve as a foundation for an 1C device 1600 may be used. The substrate 1602 may be part of a singulated die (e.g., the dies 1502 of FIG. 16) or a wafer (e.g., the wafer 1500 of FIG. 16).

[0061] The 1C device 1600 may include one or more device layers 1604 disposed on the substrate 1602. The device layer 1604 may include features of one or more transistors 1640 (e.g., metal oxide semiconductor field-effect transistors (MOSFETs)) formed on the substrate 1602. The device layer 1604 may include, for example, one or more source and/or drain (S/D) regions 1620, a gate 1622 to control current flow in the transistors 1640 between the S/D regions 1620, and one or more S/D contacts 1624 to route electrical signals to/from the S/D regions 1620. The transistors 1640 may include additional features not depicted for the sake of clarity, such as device isolation regions, gate contacts, and the like. The transistors 1640 are not limited to the type and configuration depicted in FIG. 17 and may include a wide variety of other types and configurations such as, for example, planar transistors, non-planar transistors, or a combination of both. Non-planar transistors may include FinFET transistors, such as double-gate transistors or tri-gate transistors, and wrap-around or all- around gate transistors, such as nanoribbon and nanowire transistors.

[0062] Each transistor 1640 may include a gate 1622 formed of at least two layers, a gate dielectric and a gate electrode. The gate dielectric may include one layer or a stack of layers. The one or more layers may include silicon oxide, silicon dioxide, silicon carbide, and/or a high-k dielectric material. The high-k dielectric material may include elements such as hafnium, silicon, oxygen, titanium, tantalum, lanthanum, aluminum, zirconium, barium, strontium, yttrium, lead, scandium, niobium, and zinc. Examples of high-k materials that may be used in the gate dielectric include, but are not limited to, hafnium oxide, hafnium silicon oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate. In some embodiments, an annealing process may be carried out on the gate dielectric to improve its quality when a high-k material is used.

[0063] The gate electrode may be formed on the gate dielectric and may include at least one p-type work function metal or n-type work function metal, depending on whether the transistor 1640 is to be a p-type metal oxide semiconductor (PMOS) or an n-type metal oxide semiconductor (NMOS) transistor. In some implementations, the gate electrode may consist of a stack of two or more metal layers, where one or more metal layers are work function metal layers and at least one metal layer is a fill metal layer. Further metal layers may be included for other purposes, such as a barrier layer.

For a PMOS transistor, metals that may be used for the gate electrode include, but are not limited to, ruthenium, palladium, platinum, cobalt, nickel, conductive metal oxides (e.g., ruthenium oxide), and any of the metals discussed below with reference to an NMOS transistor (e.g., for work function tuning). For an NMOS transistor, metals that may be used for the gate electrode include, but are not limited to, hafnium, zirconium, titanium, tantalum, aluminum, alloys of these metals, carbides of these metals (e.g., hafnium carbide, zirconium carbide, titanium carbide, tantalum carbide, and aluminum carbide), and any of the metals discussed above with reference to a PMOS transistor (e.g., for work function tuning).

[0064] In some embodiments, when viewed as a cross-section of the transistor 1640 along the source-channel-drain direction, the gate electrode may consist of a U-shaped structure that includes a bottom portion substantially parallel to the surface of the substrate and two sidewall portions that are substantially perpendicular to the top surface of the substrate. In other embodiments, at least one of the metal layers that form the gate electrode may simply be a planar layer that is substantially parallel to the top surface of the substrate and does not include sidewall portions substantially perpendicular to the top surface of the substrate. In other embodiments, the gate electrode may consist of a combination of U-shaped structures and planar, non-U-shaped structures. For example, the gate electrode may consist of one or more U-shaped metal layers formed atop one or more planar, non-U-shaped layers.

[0065] In some embodiments, a pair of sidewall spacers may be formed on opposing sides of the gate stack to bracket the gate stack. The sidewall spacers may be formed from materials such as silicon nitride, silicon oxide, silicon carbide, silicon nitride doped with carbon, and silicon oxynitride. Processes for forming sidewall spacers are well known in the art and generally include deposition and etching process steps. In some embodiments, a plurality of spacer pairs may be used; for instance, two pairs, three pairs, or four pairs of sidewall spacers may be formed on opposing sides of the gate stack.

[0066] The S/D regions 1620 may be formed within the substrate 1602 adjacent to the gate 1622 of each transistor 1640. The S/D regions 1620 may be formed using an implantation/diffusion process or an etching/deposition process, for example. In the former process, dopants such as boron, aluminum, antimony, phosphorous, or arsenic may be ion-implanted into the substrate 1602 to form the S/D regions 1620. An annealing process that activates the dopants and causes them to diffuse farther into the substrate 1602 may follow the ion-implantation process. In the latter process, the substrate 1602 may first be etched to form recesses at the locations of the S/D regions 1620. An epitaxial deposition process may then be carried out to fill the recesses with material that is used to fabricate the S/D regions 1620. In some implementations, the S/D regions 1620 may be fabricated using a silicon alloy such as silicon germanium or silicon carbide. In some embodiments, the epitaxially deposited silicon alloy may be doped in situ with dopants such as boron, arsenic, or phosphorous. In some embodiments, the S/D regions 1620 may be formed using one or more alternate semiconductor materials such as germanium or a group lll-V material or alloy. In further embodiments, one or more layers of metal and/or metal alloys may be used to form the S/D regions 1620.

[0067] Electrical signals, such as power and/or input/output (I/O) signals, may be routed to and/or from the devices (e.g., transistors 1640) of the device layer 1604 through one or more interconnect layers disposed on the device layer 1604 (illustrated in FIG. 17 as interconnect layers 1606-1610).

For example, electrically conductive features of the device layer 1604 (e.g., the gate 1622 and the S/D contacts 1624) may be electrically coupled with the interconnect structures 1628 of the interconnect layers 1606-1610. The one or more interconnect layers 1606-1610 may form a metallization stack (also referred to as an "ILD stack") 1619 of the 1C device 1600. [0068] The interconnect structures 1628 may be arranged within the interconnect layers 1606-1610 to route electrical signals according to a wide variety of designs (in particular, the arrangement is not limited to the particular configuration of interconnect structures 1628 depicted in FIG. 17). Although a particular number of interconnect layers 1606-1610 is depicted in FIG. 17, embodiments of the present disclosure include 1C devices having more or fewer interconnect layers than depicted.

[0069] In some embodiments, the interconnect structures 1628 may include lines 1628a and/or vias 1628b filled with an electrically conductive material such as a metal. The lines 1628a may be arranged to route electrical signals in a direction of a plane that is substantially parallel with a surface of the substrate 1602 upon which the device layer 1604 is formed. For example, the lines 1628a may route electrical signals in a direction in and out of the page from the perspective of FIG. 17. The vias 1628b may be arranged to route electrical signals in a direction of a plane that is substantially perpendicular to the surface of the substrate 1602 upon which the device layer 1604 is formed. In some embodiments, the vias 1628b may electrically couple lines 1628a of different interconnect layers 1606-1610 together.

[0070] The interconnect layers 1606-1610 may include a dielectric material 1626 disposed between the interconnect structures 1628, as shown in FIG. 17. In some embodiments, the dielectric material 1626 disposed between the interconnect structures 1628 in different ones of the interconnect layers 1606-1610 may have different compositions; in other embodiments, the composition of the dielectric material 1626 between different interconnect layers 1606-1610 may be the same.

[0071] A first interconnect layer 1606 (referred to as Metal 1 or "Ml") may be formed directly on the device layer 1604. In some embodiments, the first interconnect layer 1606 may include lines 1628a and/or vias 1628b, as shown. The lines 1628a of the first interconnect layer 1606 may be coupled with contacts (e.g., the S/D contacts 1624) of the device layer 1604.

[0072] A second interconnect layer 1608 (referred to as Metal 2 or "M2") may be formed directly on the first interconnect layer 1606. In some embodiments, the second interconnect layer 1608 may include vias 1628b to couple the lines 1628a of the second interconnect layer 1608 with the lines 1628a of the first interconnect layer 1606. Although the lines 1628a and the vias 1628b are structurally delineated with a line within each interconnect layer (e.g., within the second

interconnect layer 1608) for the sake of clarity, the lines 1628a and the vias 1628b may be structurally and/or materially contiguous (e.g., simultaneously filled during a dual-damascene process) in some embodiments.

[0073] A third interconnect layer 1610 (referred to as Metal 3 or "M3") (and additional interconnect layers, as desired) may be formed in succession on the second interconnect layer 1608 according to similar techniques and configurations described in connection with the second interconnect layer 1608 or the first interconnect layer 1606. In some embodiments, the interconnect layers that are "higher up" in the metallization stack 1619 in the 1C device 1600 (i.e., farther away from the device layer 1604) may be thicker.

[0074] The 1C device 1600 may include a solder resist material 1634 (e.g., polyimide or similar material) and one or more conductive contacts 1636 formed on the interconnect layers 1606-1610.

In FIG. 17, the conductive contacts 1636 are illustrated as taking the form of bond pads. The conductive contacts 1636 may be electrically coupled with the interconnect structures 1628 and configured to route the electrical signals of the transistor(s) 1640 to other external devices. For example, solder bonds may be formed on the one or more conductive contacts 1636 to mechanically and/or electrically couple a chip including the 1C device 1600 with another component (e.g., a circuit board). The 1C device 1600 may include additional or alternate structures to route the electrical signals from the interconnect layers 1606-1610; for example, the conductive contacts 1636 may include other analogous features (e.g., posts) that route the electrical signals to external components.

[0075] FIG. 18 is a cross-sectional view of an example 1C package 1650 that may include components processed in accordance with any of the CMP systems and techniques disclosed herein. The package substrate 1652 may be formed of a dielectric material, and may have conductive pathways extending through the dielectric material between the face 1672 and the face 1674, or between different locations on the face 1672, and/or between different locations on the face 1674. These conductive pathways may take the form of any of the interconnects 1628 discussed above with reference to FIG. 17.

[0076] The 1C package 1650 may include a die 1656 coupled to the package substrate 1652 via conductive contacts 1654 of the die 1656, first-level interconnects 1658, and conductive contacts 1660 of the package substrate 1652. The conductive contacts 1660 may be coupled to conductive pathways 1662 through the package substrate 1652, allowing circuitry within the die 1656 to electrically couple to various ones of the conductive contacts 1664 (or to other devices included in the package substrate 1652, not shown). The first-level interconnects 1658 illustrated in FIG. 18 are solder bumps, but any suitable first-level interconnects 1658 may be used. As used herein, a "conductive contact" may refer to a portion of conductive material (e.g., metal) serving as an electrical interface between different components; conductive contacts may be recessed in, flush with, or extending away from a surface of a component, and may take any suitable form (e.g., a conductive pad or socket).

[0077] In some embodiments, an underfill material 1666 may be disposed between the die 1656 and the package substrate 1652 around the first-level interconnects 1658, and a mold compound 1668 may be disposed around the die 1656 and in contact with the package substrate 1652. In some embodiments, the underfill material 1666 may be the same as the mold compound 1668. Example materials that may be used for the underfill material 1666 and the mold compound 1668 are epoxy mold materials, as suitable. Second-level interconnects 1670 may be coupled to the conductive contacts 1664. The second-level interconnects 1670 illustrated in FIG. 18 are solder balls (e.g., for a ball grid array arrangement), but any suitable second-level interconnects 16770 may be used (e.g., pins in a pin grid array arrangement or lands in a land grid array arrangement). The second-level interconnects 1670 may be used to couple the 1C package 1650 to another component, such as a circuit board (e.g., a motherboard), an interposer, or another 1C package, as known in the art and as discussed below with reference to FIG. 19.

[0078] Although the 1C package 1650 illustrated in FIG. 18 is a flip chip package, other package architectures may be used. For example, the 1C package 1650 may be a ball grid array (BGA) package, such as an embedded wafer-level ball grid array (eWLB) package. In another example, the 1C package 1650 may be a wafer-level chip scale package (WLCSP) or a panel fanout (FO) package. Although a single die 1656 is illustrated in the 1C package 1650 of FIG. 18, an 1C package 1650 may include multiple dies 1656. An 1C package 1650 may include additional passive components, such as surface-mount resistors, capacitors, and inductors disposed on the first face 1672 or the second face 1674 of the package substrate 1652. More generally, an 1C package 1650 may include any other active or passive components known in the art.

[0079] FIG. 19 is a cross-sectional side view of an 1C device assembly 1700 that may include components processed in accordance with any of the CM P systems or techniques disclosed herein. The 1C device assembly 1700 includes a number of components disposed on a circuit board 1702 (which may be, e.g., a motherboard). The 1C device assembly 1700 includes components disposed on a first face 1740 of the circuit board 1702 and an opposing second face 1742 of the circuit board 1702; generally, components may be disposed on one or both faces 1740 and 1742. Any of the 1C packages discussed below with reference to the 1C device assembly 1700 may take the form of any of the embodiments of the 1C package 1650 discussed above with reference to FIG. 18.

[0080] In some embodiments, the circuit board 1702 may be a printed circuit board (PCB) including multiple metal layers separated from one another by layers of dielectric material and interconnected by electrically conductive vias. Any one or more of the metal layers may be formed in a desired circuit pattern to route electrical signals (optionally in conjunction with other metal layers) between the components coupled to the circuit board 1702. In other embodiments, the circuit board 1702 may be a non-PCB substrate. [0081] The 1C device assembly 1700 illustrated in FIG. 19 includes a package-on-interposer structure 1736 coupled to the first face 1740 of the circuit board 1702 by coupling components 1716. The coupling components 1716 may electrically and mechanically couple the package-on-interposer structure 1736 to the circuit board 1702, and may include solder balls (as shown in FIG. 19), male and female portions of a socket, an adhesive, an underfill material, and/or any other suitable electrical and/or mechanical coupling structure.

[0082] The package-on-interposer structure 1736 may include an 1C package 1720 coupled to an interposer 1704 by coupling components 1718. The coupling components 1718 may take any suitable form for the application, such as the forms discussed above with reference to the coupling components 1716. Although a single 1C package 1720 is shown in FIG. 19, multiple 1C packages may be coupled to the interposer 1704; indeed, additional interposers may be coupled to the interposer 1704. The interposer 1704 may provide an intervening substrate used to bridge the circuit board 1702 and the 1C package 1720. The 1C package 1720 may be or include, for example, a die (the die 1502 of FIG. 16), an 1C device (e.g., the 1C device 1600 of FIG. 17), or any other suitable component. Generally, the interposer 1704 may spread a connection to a wider pitch or reroute a connection to a different connection. For example, the interposer 1704 may couple the 1C package 1720 (e.g., a die) to a set of BGA conductive contacts of the coupling components 1716 for coupling to the circuit board 1702. In the embodiment illustrated in FIG. 19, the 1C package 1720 and the circuit board 1702 are attached to opposing sides of the interposer 1704; in other embodiments, the 1C package 1720 and the circuit board 1702 may be attached to a same side of the interposer 1704. In some embodiments, three or more components may be interconnected by way of the interposer 1704.

[0083] In some embodiments, the interposer 1704 may be formed as a PCB, including multiple metal layers separated from one another by layers of dielectric material and interconnected by electrically conductive vias. In some embodiments, the interposer 1704 may be formed of an epoxy resin, a fiberglass-reinforced epoxy resin, an epoxy resin with inorganic fillers, a ceramic material, or a polymer material such as polyimide. In some embodiments, the interposer 1704 may be formed of alternate rigid or flexible materials that may include the same materials described above for use in a semiconductor substrate, such as silicon, germanium, and other group lll-V and group IV materials. The interposer 1704 may include metal interconnects 1708 and vias 1710, including but not limited to through-silicon vias (TSVs) 1706. The interposer 1704 may further include embedded devices 1714, including both passive and active devices. Such devices may include, but are not limited to, capacitors, decoupling capacitors, resistors, inductors, fuses, diodes, transformers, sensors, electrostatic discharge (ESD) devices, and memory devices. More complex devices such as radio frequency devices, power amplifiers, power management devices, antennas, arrays, sensors, and microelectromechanical systems (M EMS) devices may also be formed on the interposer 1704. The package-on-interposer structure 1736 may take the form of any of the package-on-interposer structures known in the art.

[0084] The 1C device assembly 1700 may include an 1C package 1724 coupled to the first face 1740 of the circuit board 1702 by coupling components 1722. The coupling components 1722 may take the form of any of the embodiments discussed above with reference to the coupling components 1716, and the 1C package 1724 may take the form of any of the embodiments discussed above with reference to the 1C package 1720.

[0085] The 1C device assembly 1700 illustrated in FIG. 19 includes a package-on-package structure 1734 coupled to the second face 1742 of the circuit board 1702 by coupling components 1728. The package-on-package structure 1734 may include an 1C package 1726 and an 1C package 1732 coupled together by coupling components 1730 such that the 1C package 1726 is disposed between the circuit board 1702 and the 1C package 1732. The coupling components 1728 and 1730 may take the form of any of the embodiments of the coupling components 1716 discussed above, and the 1C packages 1726 and 1732 may take the form of any of the embodiments of the 1C package 1720 discussed above. The package-on-package structure 1734 may be configured in accordance with any of the package-on-package structures known in the art.

[0086] FIG. 20 is a block diagram of an example computing device 1800 that may include one or more components processed using the CMP systems and techniques disclosed herein. For example, any suitable ones of the components of the electrical device 1800 may include one or more of the 1C packages 1650, 1C devices 1600, or dies 1502 disclosed herein. A number of components are illustrated in FIG. 20 as included in the electrical device 1800, but any one or more of these components may be omitted or duplicated, as suitable for the application. In some embodiments, some or all of the components included in the electrical device 1800 may be attached to one or more motherboards. In some embodiments, some or all of these components are fabricated onto a single system-on-a-chip (SoC) die.

[0087] Additionally, in various embodiments, the electrical device 1800 may not include one or more of the components illustrated in FIG. 20, but the electrical device 1800 may include interface circuitry for coupling to the one or more components. For example, the electrical device 1800 may not include a display device 1806, but may include display device interface circuitry (e.g., a connector and driver circuitry) to which a display device 1806 may be coupled. In another set of examples, the electrical device 1800 may not include an audio input device 1824 or an audio output device 1808, but may include audio input or output device interface circuitry (e.g., connectors and supporting circuitry) to which an audio input device 1824 or audio output device 1808 may be coupled.

[0088] The electrical device 1800 may include a processing device 1802 (e.g., one or more processing devices). As used herein, the term "processing device" or "processor" may refer to any device or portion of a device that processes electronic data from registers and/or memory to transform that electronic data into other electronic data that may be stored in registers and/or memory. The processing device 1802 may include one or more digital signal processors (DSPs), application-specific integrated circuits (ASICs), central processing units (CPUs), graphics processing units (GPUs), cryptoprocessors (specialized processors that execute cryptographic algorithms within hardware), server processors, or any other suitable processing devices. The electrical device 1800 may include a memory 1804, which may itself include one or more memory devices such as volatile memory (e.g., dynamic random access memory (DRAM)), nonvolatile memory (e.g., read-only memory (ROM)), flash memory, solid state memory, and/or a hard drive. In some embodiments, the memory 1804 may include memory that shares a die with the processing device 1802. This memory may be used as cache memory and may include embedded dynamic random access memory (eDRAM) or spin transfer torque magnetic random access memory (STT-MRAM).

[0089] In some embodiments, the electrical device 1800 may include a communication chip 1812 (e.g., one or more communication chips). For example, the communication chip 1812 may be configured for managing wireless communications for the transfer of data to and from the electrical device 1800. The term "wireless" and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc., that may communicate data through the use of modulated electromagnetic radiation through a nonsolid medium. The term does not imply that the associated devices do not contain any wires, although in some embodiments they might not.

[0090] The communication chip 1812 may implement any of a number of wireless standards or protocols, including but not limited to Institute for Electrical and Electronic Engineers (IEEE) standards including Wi-Fi (IEEE 802.11 family), IEEE 802.16 standards (e.g., IEEE 802.16-2005 Amendment), Long-Term Evolution (LTE) project along with any amendments, updates, and/or revisions (e.g., advanced LTE project, ultra mobile broadband (UMB) project (also referred to as "3GPP2"), etc.). IEEE 802.16 compatible Broadband Wireless Access (BWA) networks are generally referred to as WiMAX networks, an acronym that stands for Worldwide Interoperability for Microwave Access, which is a certification mark for products that pass conformity and

interoperability tests for the IEEE 802.16 standards. The communication chip 1812 may operate in accordance with a Global System for Mobile Communication (GSM), General Packet Radio Service (GPRS), Universal Mobile Telecommunications System (UMTS), High Speed Packet Access (HSPA), Evolved HSPA (E-HSPA), or LTE network. The communication chip 1812 may operate in accordance with Enhanced Data for GSM Evolution (EDGE), GSM EDGE Radio Access Network (GERAN), Universal Terrestrial Radio Access Network (UTRAN), or Evolved UTRAN (E-UTRAN). The communication chip 1812 may operate in accordance with Code Division Multiple Access (CDMA), Time Division Multiple Access (TDMA), Digital Enhanced Cordless Telecommunications (DECT), Evolution-Data Optimized (EV-DO), and derivatives thereof, as well as any other wireless protocols that are designated as 3G, 4G, 5G, and beyond. The communication chip 1812 may operate in accordance with other wireless protocols in other embodiments. The electrical device 1800 may include an antenna 1822 to facilitate wireless communications and/or to receive other wireless communications (such as AM or FM radio transmissions).

[0091] In some embodiments, the communication chip 1812 may manage wired communications, such as electrical, optical, or any other suitable communication protocols (e.g., the Ethernet). As noted above, the communication chip 1812 may include multiple communication chips. For instance, a first communication chip 1812 may be dedicated to shorter-range wireless

communications such as Wi-Fi or Bluetooth, and a second communication chip 1812 may be dedicated to longer-range wireless communications such as global positioning system (GPS), EDGE, GPRS, CDMA, WiMAX, LTE, EV-DO, or others. In some embodiments, a first communication chip 1812 may be dedicated to wireless communications, and a second communication chip 1812 may be dedicated to wired communications.

[0092] The electrical device 1800 may include battery/power circuitry 1814. The battery/power circuitry 1814 may include one or more energy storage devices (e.g., batteries or capacitors) and/or circuitry for coupling components of the electrical device 1800 to an energy source separate from the electrical device 1800 (e.g., AC line power).

[0093] The electrical device 1800 may include a display device 1806 (or corresponding interface circuitry, as discussed above). The display device 1806 may include any visual indicators, such as a heads-up display, a computer monitor, a projector, a touchscreen display, a liquid crystal display (LCD), a light-emitting diode display, or a flat panel display.

[0094] The electrical device 1800 may include an audio output device 1808 (or corresponding interface circuitry, as discussed above). The audio output device 1808 may include any device that generates an audible indicator, such as speakers, headsets, or earbuds.

[0095] The electrical device 1800 may include an audio input device 1824 (or corresponding interface circuitry, as discussed above). The audio input device 1824 may include any device that generates a signal representative of a sound, such as microphones, microphone arrays, or digital instruments (e.g., instruments having a musical instrument digital interface (MIDI) output).

[0096] The electrical device 1800 may include a GPS device 1818 (or corresponding interface circuitry, as discussed above). The GPS device 1818 may be in communication with a satellite-based system and may receive a location of the electrical device 1800, as known in the art.

[0097] The electrical device 1800 may include an other output device 1810 (or corresponding interface circuitry, as discussed above). Examples of the other output device 1810 may include an audio codec, a video codec, a printer, a wired or wireless transmitter for providing information to other devices, or an additional storage device.

[0098] The electrical device 1800 may include an other input device 1820 (or corresponding interface circuitry, as discussed above). Examples of the other input device 1820 may include an accelerometer, a gyroscope, a compass, an image capture device, a keyboard, a cursor control device such as a mouse, a stylus, a touchpad, a bar code reader, a Quick Response (QR) code reader, any sensor, or a radio frequency identification (RFID) reader.

[0099] The electrical device 1800 may have any desired form factor, such as a hand-held or mobile electrical device (e.g., a cell phone, a smart phone, a mobile internet device, a music player, a tablet computer, a laptop computer, a netbook computer, an ultrabook computer, a personal digital assistant (PDA), an ultra mobile personal computer, etc.), a desktop electrical device, a server or other networked computing component, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a vehicle control unit, a digital camera, a digital video recorder, or a wearable electrical device. In some embodiments, the electrical device 1800 may be any other electronic device that processes data.

[0100] The following paragraphs provide various examples of the embodiments disclosed herein.

[0101] Example 1 is a chemical mechanical polishing (CMP) polishing pad structure, including: a CM P polishing pad; and a magnetic material included in or on the CM P polishing pad.

[0102] Example 2 may include the subject matter of Example 1, and may further specify that the magnetic material is secured to the CMP polishing pad by an adhesive.

[0103] Example 3 may include the subject matter of Example 2, and may further specify that the adhesive includes a pressure-sensitive adhesive.

[0104] Example 4 may include the subject matter of any of Examples 2, and may further specify that the magnetic material is included in a magnetic polymer tape.

[0105] Example 5 may include the subject matter of Example 1, and may further specify that the magnetic material is laminated to the CM P polishing pad. [0106] Example 6 may include the subject matter of Example 5, and may further specify that the magnetic material is included in a magnetic polymer tape.

[0107] Example 7 may include the subject matter of Example 1, and may further specify that the magnetic material is coated on a surface of the CMP polishing pad.

[0108] Example 8 may include the subject matter of any of Examples 1-7, and may further specify that the magnetic material includes magnetic particles included in the CMP polishing pad.

[0109] Example 9 may include the subject matter of any of Examples 1-8, and may further specify that the magnetic material is not uniformly distributed in or on the CMP polishing pad.

[0110] Example 10 may include the subject matter of any of Examples 1-8, and may further specify that the magnetic material is distributed uniformly in or across a surface of the CMP polishing pad.

[0111] Example 11 may include the subject matter of any of Examples 1-10, and may further specify that the magnetic material includes iron, cobalt, nickel, or a rare earth metal.

[0112] Example 12 may include the subject matter of any of Examples 1-11, and may further specify that the CMP polishing pad includes a polymer.

[0113] Example 13 may include the subject matter of any of Examples 1-12, and may further specify that the CMP polishing pad includes rubber.

[0114] Example 14 is a chemical mechanical polishing (CMP) platen structure, including: a CMP platen; and a magnetic material, or electromagnet, included in or on the CMP platen.

[0115] Example 15 may include the subject matter of Example 14, and may further specify that the magnetic material is included in or on the CMP platen.

[0116] Example 16 may include the subject matter of Example 15, and may further specify that the magnetic material is secured to the CMP platen by an adhesive.

[0117] Example 17 may include the subject matter of Example 16, and may further specify that the adhesive includes a pressure-sensitive adhesive.

[0118] Example 18 may include the subject matter of any of Examples 16-17, and may further specify that the magnetic material is included in a magnetic polymer tape.

[0119] Example 19 may include the subject matter of Example 15, and may further specify that the magnetic material is coated on a surface of the CMP platen.

[0120] Example 20 may include the subject matter of Example 19, and may further specify that the magnetic material includes an alternating stack of buckminsterfullerenes and another material.

[0121] Example 21 may include the subject matter of Example 15, and may further specify that the CMP platen includes the magnetic material.

[0122] Example 22 may include the subject matter of Example 21, and may further specify that the CMP platen includes steel. [0123] Example 23 may include the subject matter of any of Examples 15-20, and may further specify that the magnetic material is not uniformly distributed in or on the CMP platen.

[0124] Example 24 may include the subject matter of any of Examples 15-20, and may further specify that the magnetic material is distributed uniformly in or across a surface of the CMP platen.

[0125] Example 25 may include the subject matter of any of Examples 14-24, and may further specify that the magnetic material includes iron, cobalt, nickel, or a rare earth metal.

[0126] Example 26 may include the subject matter of any of Examples 14-20, and may further specify that the CMP platen includes aluminum.

[0127] Example 27 may include the subject matter of Example 14, and may further specify that the electromagnet is included in or on the CMP platen.

[0128] Example 28 may include the subject matter of Example 27, and may further specify that the CMP platen has a pad-facing surface and an opposing surface, and the pad-facing surface is between the electromagnet and the opposing surface.

[0129] Example 29 may include the subject matter of Example 27, and may further specify that the CMP platen has a pad-facing surface and an opposing surface, and the opposing surface is between the electromagnet and the pad-facing surface.

[0130] Example 30 is a method of manufacturing a chemical mechanical polishing (CMP) polishing pad structure, including: providing an initial CMP polishing pad; and forming a magnetic material on the initial CMP polishing pad.

[0131] Example 31 may include the subject matter of Example 30, and may further specify that forming the magnetic material on the initial CMP polishing pad includes coupling a magnetic material to a surface of the initial CMP polishing pad with an adhesive.

[0132] Example 32 may include the subject matter of Example 30, and may further specify that forming the magnetic material on the initial CMP polishing pad includes laminating the magnetic material to a surface of the initial CMP polishing pad.

[0133] Example 33 may include the subject matter of Example 30, and may further specify that forming the magnetic material on the initial CMP polishing pad includes depositing the magnetic material on a surface of the initial CMP polishing pad.

[0134] Example 34 may include the subject matter of Example 33, and may further specify that depositing the magnetic material includes performing physical vapor deposition, flame spraying, arc spraying, or electroless plating.

[0135] Example 35 may include the subject matter of any of Examples 30-34, and may further specify that the initial CMP polishing pad includes an elastomeric polymer. [0136] Example 36 may include the subject matter of any of Examples 30-35, and may further specify that the magnetic material is introduced to a platen-facing surface of the initial CMP polishing pad.

[0137] Example 37 is a method of manufacturing a chemical mechanical polishing (CMP) polishing pad structure, including: forming a material mixture including a polymer and magnetic particles; and forming the material mixture into a CMP polishing pad structure.

[0138] Example 38 may include the subject matter of Example 37, and may further specify that forming the material mixture into a CMP polishing pad structure includes additive manufacturing.

[0139] Example 39 may include the subject matter of Example 37, and may further specify that forming the material mixture into a CMP polishing pad structure includes injection molding or compression molding.

[0140] Example 40 is a method of manufacturing a chemical mechanical polishing (CMP) platen structure, including: providing an initial CMP platen; and forming a magnetic material on the initial CMP platen.

[0141] Example 41 may include the subject matter of Example 40, and may further specify that forming the magnetic material on the initial CMP platen includes coupling a magnetic material to a surface of the initial CMP platen with an adhesive.

[0142] Example 42 may include the subject matter of Example 40, and may further specify that forming the magnetic material on the initial CMP platen includes depositing the magnetic material on a surface of the initial CMP polishing pad.

[0143] Example 43 may include the subject matter of Example 40, and may further specify that depositing the magnetic material includes performing electroplating, sputtering, vacuum deposition, atomic layer deposition, chemical vapor deposition, or physical vapor deposition.

[0144] Example 44 may include the subject matter of Example 40, and may further specify that depositing the magnetic material includes depositing an alternating stack of buckminsterfullerenes and another material.

[0145] Example 45 may include the subject matter of any of Examples 40-44, and may further specify that the initial CMP platen includes aluminum.

[0146] Example 46 may include the subject matter of any of Examples 40-44, and may further specify that the initial CMP platen includes a non-magnetic material.

[0147] Example 47 may include the subject matter of any of Examples 40-44, and may further specify that the initial CMP platen includes a non-magnetic metal. [0148] Example 48 is a chemical mechanical polishing (CMP) system, including: a CMP polishing pad structure; and a CMP platen structure; wherein the CMP polishing pad structure is magnetically coupled to the CMP platen structure.

[0149] Example 49 may include the subject matter of Example 48, and may further specify that the CMP polishing pad structure includes: a CMP polishing pad; and a magnetic material included in or on the CMP polishing pad.

[0150] Example 50 may include the subject matter of Example 49, and may further specify that the magnetic material is secured to the CMP polishing pad by an adhesive.

[0151] Example 51 may include the subject matter of Example 50, and may further specify that the adhesive includes a pressure-sensitive adhesive.

[0152] Example 52 may include the subject matter of Example 50, and may further specify that the magnetic material is included in a magnetic polymer tape.

[0153] Example 53 may include the subject matter of Example 49, and may further specify that the magnetic material is laminated to the CMP polishing pad.

[0154] Example 54 may include the subject matter of Example 53, and may further specify that the magnetic material is included in a magnetic polymer tape.

[0155] Example 55 may include the subject matter of Example 49, and may further specify that the magnetic material is coated on a surface of the CMP polishing pad.

[0156] Example 56 may include the subject matter of Example 49, and may further specify that the magnetic material includes magnetic particles included in the CMP polishing pad.

[0157] Example 57 may include the subject matter of Example 49, and may further specify that the magnetic material is not uniformly distributed in or on the CMP polishing pad.

[0158] Example 58 may include the subject matter of Example 49, and may further specify that the magnetic material is distributed uniformly in or across a surface of the CMP polishing pad.

[0159] Example 59 may include the subject matter of any of Examples 49-58, and may further specify that the magnetic material includes iron, cobalt, nickel, or a rare earth metal.

[0160] Example 60 may include the subject matter of any of Examples 49-59, and may further specify that the CMP polishing pad includes a polymer.

[0161] Example 61 may include the subject matter of any of Examples 49-60, and may further specify that the CMP polishing pad includes rubber.

[0162] Example 62 may include the subject matter of any of Examples 48-61, and may further specify that the CMP platen structure includes: a CMP platen; and a magnetic material, or electromagnet, included in or on the CMP platen. [0163] Example 63 may include the subject matter of Example 62, and may further specify that the magnetic material is included in or on the CMP platen.

[0164] Example 64 may include the subject matter of Example 63, and may further specify that the magnetic material is secured to the CMP platen by an adhesive.

[0165] Example 65 may include the subject matter of Example 64, and may further specify that the adhesive includes a pressure-sensitive adhesive.

[0166] Example 66 may include the subject matter of Example 64, and may further specify that the magnetic material is included in a magnetic polymer tape.

[0167] Example 67 may include the subject matter of Example 64, and may further specify that the magnetic material is coated on a surface of the CMP platen.

[0168] Example 68 may include the subject matter of Example 67, and may further specify that the magnetic material includes an alternating stack of buckminsterfullerenes and another material.

[0169] Example 69 may include the subject matter of any of Examples 63, and may further specify that the CMP platen includes the magnetic material.

[0170] Example 70 may include the subject matter of any of Examples 69, and may further specify that the CMP platen includes steel.

[0171] Example 71 may include the subject matter of Example 62, and may further specify that the magnetic material is not uniformly distributed in or on the CMP platen.

[0172] Example 72 may include the subject matter of Example 62, and may further specify that the magnetic material is distributed uniformly in or across a surface of the CMP platen.

[0173] Example 73 may include the subject matter of Example 62, and may further specify that the magnetic material includes iron, cobalt, nickel, or a rare earth metal.

[0174] Example 74 may include the subject matter of any of Examples 48-61, and may further specify that the CMP platen includes aluminum.

[0175] Example 75 may include the subject matter of any of Examples 48-61, and may further specify that an electromagnet is included in or on the CMP platen.

[0176] Example 76 may include the subject matter of Example 75, and may further specify that the CMP platen has a pad-facing surface and an opposing surface, and the pad-facing surface is between the electromagnet and the opposing surface.

[0177] Example 77 may include the subject matter of Example 75, and may further specify that the CMP platen has a pad-facing surface and an opposing surface, and the opposing surface is between the electromagnet and the pad-facing surface. [0178] Example 78 is a method of using a chemical mechanical polishing (CMP) system, including: magnetically coupling a CMP polishing pad structure to a CMP platen structure; and polishing an object with the CMP polishing pad structure.

[0179] Example 79 may include the subject matter of Example 78, and may further specify that the CMP polishing pad structure includes: a CMP polishing pad; and a magnetic material included in or on the CMP polishing pad.

[0180] Example 80 may include the subject matter of Example 79, and may further specify that the magnetic material is secured to the CMP polishing pad by an adhesive.

[0181] Example 81 may include the subject matter of Example 80, and may further specify that the adhesive includes a pressure-sensitive adhesive.

[0182] Example 82 may include the subject matter of Example 80, and may further specify that the magnetic material is included in a magnetic polymer tape.

[0183] Example 83 may include the subject matter of Example 79, and may further specify that the magnetic material is laminated to the CMP polishing pad.

[0184] Example 84 may include the subject matter of Example 83, and may further specify that the magnetic material is included in a magnetic polymer tape.

[0185] Example 85 may include the subject matter of Example 79, and may further specify that the magnetic material is coated on a surface of the CMP polishing pad.

[0186] Example 86 may include the subject matter of Example 79, and may further specify that the magnetic material includes magnetic particles included in the CMP polishing pad.

[0187] Example 87 may include the subject matter of Example 79, and may further specify that the magnetic material is not uniformly distributed in or on the CMP polishing pad.

[0188] Example 88 may include the subject matter of Example 79, and may further specify that the magnetic material is distributed uniformly in or across a surface of the CMP polishing pad.

[0189] Example 89 may include the subject matter of Example 79, and may further specify that the magnetic material includes iron, cobalt, nickel, or a rare earth metal.

[0190] Example 90 may include the subject matter of Example 79, and may further specify that the CMP polishing pad includes a polymer.

[0191] Example 91 may include the subject matter of Example 79, and may further specify that the CMP polishing pad includes rubber.

[0192] Example 92 may include the subject matter of any of Examples 78-91, and may further specify that the CMP platen structure includes:

[0193] a CMP platen; and a magnetic material, or electromagnet, included in or on the CMP platen. [0194] Example 93 may include the subject matter of Example 92, and may further specify that the magnetic material is included in or on the CMP platen.

[0195] Example 94 may include the subject matter of Example 93, and may further specify that the magnetic material is secured to the CMP platen by an adhesive.

[0196] Example 95 may include the subject matter of Example 94, and may further specify that the adhesive includes a pressure-sensitive adhesive.

[0197] Example 96 may include the subject matter of Example 94, and may further specify that the magnetic material is included in a magnetic polymer tape.

[0198] Example 97 may include the subject matter of Example 94, and may further specify that the magnetic material is coated on a surface of the CMP platen.

[0199] Example 98 may include the subject matter of Example 97, and may further specify that the magnetic material includes an alternating stack of buckminsterfullerenes and another material.

[0200] Example 99 may include the subject matter of Example 93, and may further specify that the CMP platen includes the magnetic material.

[0201] Example 100 may include the subject matter of Example 99, and may further specify that the CMP platen includes steel.

[0202] Example 101 may include the subject matter of Example 92, and may further specify that the magnetic material is not uniformly distributed in or on the CMP platen.

[0203] Example 102 may include the subject matter of Example 92, and may further specify that the magnetic material is distributed uniformly in or across a surface of the CMP platen.

[0204] Example 103 may include the subject matter of any of Examples 92, and may further specify that the magnetic material includes iron, cobalt, nickel, or a rare earth metal.

[0205] Example 104 may include the subject matter of any of Examples 78-91, and may further specify that the CMP platen includes aluminum.

[0206] Example 105 may include the subject matter of any of Examples 78-91, and may further specify that an electromagnet is included in or on the CMP platen.

[0207] Example 106 may include the subject matter of Example 105, and may further specify that the CMP platen has a pad-facing surface and an opposing surface, and the pad-facing surface is between the electromagnet and the opposing surface.

[0208] Example 107 may include the subject matter of Example 105, and may further specify that the CMP platen has a pad-facing surface and an opposing surface, and the opposing surface is between the electromagnet and the pad-facing surface. [0209] Example 108 may include the subject matter of any of Examples 78-91, and may further specify that polishing the object with the CMP polishing pad structure includes causing the CMP platen structure to rotate and thereby causing the CMP polishing pad structure to rotate.

[0210] Example 109 may include the subject matter of any of Examples 78-91, and may further specify that the object is a wafer.

[0211] Example 110 may include the subject matter of any of Examples 78-91, and may further specify that the object includes an integrated circuit device.

[0212] Example 111 may include the subject matter of any of Examples 78-91, and may further include: after polishing the object with the CMP polishing pad structure, removing the CMP polishing pad structure from the CMP platen structure; and after removing the CMP polishing pad structure, attaching the CMP polishing pad structure to the CMP platen structure, or a different CMP platen structure, to perform further polishing.

Claims

Claims:

1. A chemical mechanical polishing (CMP) polishing pad structure, comprising:

a CMP polishing pad; and

a magnetic material included in or on the CMP polishing pad.

2. The CMP polishing pad structure of claim 1, wherein the magnetic material is secured to the CMP polishing pad by an adhesive.

3. The CMP polishing pad structure of claim 2, wherein the magnetic material is included in a magnetic polymer tape.

4. The CMP polishing pad structure of claim 1, wherein the magnetic material is laminated to the CMP polishing pad.

5. The CMP polishing pad structure of claim 1, wherein the magnetic material is coated on a surface of the CMP polishing pad.

6. The CMP polishing pad structure of claim 1, wherein the magnetic material includes magnetic particles included in the CMP polishing pad.

7. The CMP polishing pad structure of any of claims 1-6, wherein the magnetic material is not uniformly distributed in or on the CMP polishing pad.

8. The CMP polishing pad structure of any of claims 1-6, wherein the magnetic material is distributed uniformly in or across a surface of the CMP polishing pad.

9. The CMP polishing pad structure of any of claims 1-6, wherein the CMP polishing pad includes a polymer.

10. A chemical mechanical polishing (CMP) platen structure, comprising:

a CMP platen; and

a magnetic material, or electromagnet, included in or on the CMP platen.

11. The CMP platen structure of claim 10, wherein the magnetic material is included in or on the CMP platen.

12. The CMP platen structure of claim 11, wherein the magnetic material is secured to the CMP platen by an adhesive.

13. The CMP platen structure of claim 11, wherein the magnetic material is coated on a surface of the CMP platen.

14. The CMP platen structure of claim 11, wherein the CMP platen includes the magnetic material.

15. The CMP platen structure of any of claims 11-13, wherein the magnetic material is not uniformly distributed in or on the CMP platen.

16. The CMP platen structure of any of claims 11-13, wherein the magnetic material is distributed uniformly in or across a surface of the CMP platen.

17. The CMP platen structure of any of claims 10-13, wherein the CMP platen includes aluminum.

18. The CMP platen structure of claim 10, wherein the electromagnet is included in or on the CMP platen.

19. A method of manufacturing a chemical mechanical polishing (CMP) polishing pad structure, comprising:

providing an initial CMP polishing pad; and

forming a magnetic material on the initial CMP polishing pad.

20. The method of claim 19, wherein forming the magnetic material on the initial CMP polishing pad includes coupling a magnetic material to a surface of the initial CMP polishing pad with an adhesive.

21. The method of claim 19, wherein forming the magnetic material on the initial CMP polishing pad includes laminating the magnetic material to a surface of the initial CMP polishing pad.

22. The method of claim 19, wherein forming the magnetic material on the initial CMP polishing pad includes depositing the magnetic material on a surface of the initial CMP polishing pad.

23. A method of manufacturing a chemical mechanical polishing (CMP) platen structure, comprising: providing an initial CMP platen; and

forming a magnetic material on the initial CMP platen.

24. The method of claim 23, wherein forming the magnetic material on the initial CMP platen includes coupling a magnetic material to a surface of the initial CMP platen with an adhesive.

25. The method of claim 23, wherein forming the magnetic material on the initial CMP platen includes depositing the magnetic material on a surface of the initial CMP polishing pad.