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WO2019136886A1 - Pont - Google Patents

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Publication number
WO2019136886A1
WO2019136886A1 PCT/CN2018/085643 CN2018085643W WO2019136886A1 WO 2019136886 A1 WO2019136886 A1 WO 2019136886A1 CN 2018085643 W CN2018085643 W CN 2018085643W WO 2019136886 A1 WO2019136886 A1 WO 2019136886A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal layer
bridge
layer
branch
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/085643
Other languages
English (en)
Chinese (zh)
Inventor
武春明
田梦晗
王笑笑
石佳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shijiazhuang Chuangtian Electronic Technology Co Ltd
Original Assignee
Shijiazhuang Chuangtian Electronic Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shijiazhuang Chuangtian Electronic Technology Co Ltd filed Critical Shijiazhuang Chuangtian Electronic Technology Co Ltd
Publication of WO2019136886A1 publication Critical patent/WO2019136886A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port

Definitions

  • the embodiments of the present application relate to the field of electronic technologies, and in particular, to a bridge.
  • Microwave communication uses electromagnetic waves having a wavelength of 1 m to 0.1 mm (frequency of 0.3 GHz to 3 THz) for communication. These include terrestrial radio relay communications, troposcatter communications, satellite communications, space communications, and mobile communications operating in the microwave band. Microwave communication has the characteristics of available frequency bandwidth, large communication capacity, small transmission damage, strong anti-interference ability, etc. It can be used for point-to-point, point-to-multipoint or broadcast communication.
  • the bridge In microwave communication, the bridge is a commonly used key device, which plays the role of power distribution and phase change in microwave communication.
  • the bridge in the prior art has directionality, constant input impedance, Power and integration need to be improved.
  • one of the technical problems solved by the embodiments of the present invention is to provide a bridge for overcoming or slowing down the above-mentioned drawbacks in the prior art.
  • An embodiment of the present invention provides a bridge including: a first dielectric layer, a second dielectric layer, a first metal layer, and a second metal layer; the first metal layer is disposed above the first dielectric layer The second metal layer is disposed between the first dielectric layer and the second dielectric layer, or the second metal layer is disposed at a position above the first dielectric layer, the first metal layer Provided between the first dielectric layer and the second dielectric layer; the first metal layer is provided with a first branch, and the second metal layer is provided with a second branch, the first metal layer comprises The first branch and the second branch included in the second metal layer are disposed to form a wide-side coupling and a narrow-side coupling.
  • the first metal layer is configured with an input end and a through end, and the first branch included in the first metal layer is disposed at the input end and the Between the through ends; or, the second metal layer is configured with an input end and a through end, and the second branch included in the second metal layer is disposed between the input end and the through end.
  • the input end and the through end of the first metal layer are respectively located at two sides of the bridge; or, the second metal layer is The input end and the through end are respectively located at two sides of the bridge.
  • the second metal layer is configured with an isolation end and a coupling end, and the second branch included in the second metal layer is disposed at the isolation end and the Between the coupling ends; or, the first metal layer is configured with an isolation end and a coupling end, and the first branch included in the first metal layer is disposed between the isolation end and the coupling end.
  • the isolated end and the coupled end of the second metal layer are respectively located on two sides of the bridge; or the isolation of the first metal layer The end and the coupling end are respectively located on both sides of the bridge.
  • the first metal layer, the second metal layer, the first dielectric layer, and the second dielectric layer integrally form a coupler structure.
  • the number of sections of the coupler structure is three.
  • some or all of the different sections of the coupler structure form an intersection.
  • the coupler structure is a center symmetric structure.
  • the bridge further includes: a third metal layer, the third metal layer serving as a ground metal layer.
  • the bridge in the embodiment of the present application has a first dielectric layer, a second dielectric layer, a first metal layer, and a second metal layer; the first metal layer is disposed at a position above the first dielectric layer, and the second a metal layer is disposed between the first dielectric layer and the second dielectric layer, or the second metal layer is disposed at a position above the first dielectric layer, and the first metal layer is disposed at the first Between a dielectric layer and the second dielectric layer; the first metal layer is provided with a first branch, the second metal layer is provided with a second branch, and the first metal layer comprises the first branch
  • the circuit and the second branch included in the second metal layer are configured to form a wide-side coupling and a narrow-side coupling, thereby improving the directionality, input impedance constant, power, and integration of the bridge. performance.
  • FIG. 1 is a schematic view showing an explosion structure of a bridge in the first embodiment of the present invention
  • FIG. 2 is a schematic plan view showing the structure of the electric bridge in the second embodiment of the present invention.
  • the bridge provided in the following embodiments of the present invention includes: a first dielectric layer, a second dielectric layer, a first metal layer, and a second metal layer, wherein the first metal layer is disposed above the first dielectric layer
  • the second metal layer is disposed between the first dielectric layer and the second dielectric layer, the first metal layer is provided with a first branch, and the second metal layer is provided with a second branch,
  • a metal layer, a second metal layer, a first dielectric layer, and a second dielectric layer integrally form a coupler structure.
  • the first branch included in the first metal layer and the second branch included in the second metal layer are disposed to form a wide-side coupling and a narrow-side coupling.
  • the first metal layer is configured with an input end and a through end, and the first branch included in the first metal layer is disposed at the input end and the through pass Between the ends. Further, in the first specific application scenario, the input end and the through end of the first metal layer are respectively located at two sides of the bridge.
  • the second metal layer is configured with an isolation end and a coupling end, and the second branch included in the second metal layer is disposed at the isolation end and the coupling Between the ends.
  • the isolated end and the coupled end of the second metal layer are respectively located at two sides of the bridge.
  • the second tributary layer is configured with an input end and a through end, and the second branch included in the second metal layer is disposed at the input end and the through pass Between the ends.
  • the input end and the through end of the second metal layer are respectively located at two sides of the bridge.
  • the first metal layer is configured with an isolation end and a coupling end, and the first metal layer includes the first branch disposed at the isolation end and the coupling Between the ends.
  • the isolated end and the coupled end of the first metal layer are respectively located at two sides of the bridge.
  • the number of sections is 3 An exemplary illustration is made.
  • the first metal layer 101, the first dielectric layer 100A, the second metal layer 102, and the second dielectric layer 100B are described as an example. .
  • FIG. 1 is a schematic exploded view of a bridge in a first embodiment of the present invention; as shown in FIG. 1, the bridge includes a first dielectric layer 100A, a first metal layer 101, a second dielectric layer 100B, and a second metal layer 102.
  • the first metal layer 101, the first dielectric layer 100A, the second metal layer 102, and the second dielectric layer 100B that is, the first A metal layer 101 is located at the top, or the first metal layer 101 may be referred to as an upper metal layer; the first dielectric layer 100A is located under the first metal layer 101, and the second metal layer 102 is located Between the first dielectric layer 100A and the second dielectric layer 100B, the second dielectric layer 100B is located at the bottom.
  • the second metal layer 102 may be referred to as a lower metal layer.
  • the first dielectric layer 100A may be referred to as an upper dielectric layer
  • the second dielectric layer 100B may be referred to as a lower dielectric layer.
  • the first dielectric layer 100A and the second dielectric layer 100B may be made of the same material or may be made of different materials.
  • the first dielectric layer 100A and the second dielectric layer 100B may be in the form of a dielectric substrate.
  • the first dielectric layer 100A may also be a film layer of a predetermined thickness.
  • the coupler structure formed by the first metal layer 101, the second metal layer 102, the first dielectric layer 100A, and the second dielectric layer 100B is a microstrip line three-segment coupler structure.
  • microstrip line three-segment coupler structures form an intersection.
  • microstrip line three-segment coupler structure is a center symmetrical structure.
  • the bridge may further include: a third metal layer 103, and the third metal layer 103 serves as a ground metal layer.
  • the third metal layer 103 is specifically disposed under the second dielectric layer 100B.
  • the upper and lower branches of the microstrip line three-segment coupler structure have excessive internode and/or excessive corner.
  • FIG. 2 is a schematic plan view showing the structure of the bridge in the second embodiment of the present invention; as shown in FIG. 2, the structure of the bridge is further illustrated from a top view corresponding to the explosion structure shown in FIG.
  • the first metal layer 101 has an input end 101A and a through end 101C
  • the second metal layer 102 is configured with an isolated end 102A and a coupled end 102C.
  • the input end 101A and the through end 101C are respectively located in the The lower left and upper right sides of the bridge.
  • the isolated end 102A and the coupled end 102C are respectively located at the lower right and upper left sides of the bridge.
  • the first metal layer 101 and the second metal layer 102 are arranged according to the layer structure of FIG. 1 in such a manner that partial cross-coupling can be formed.
  • the first branch 101B included in the first metal layer 101 is disposed between the input end 101A and the through end 101C.
  • the first metal layer 101 extends in a direction from the lower left to the upper right and forms a first branch.
  • the second branch 102B included in the second metal layer 102 is disposed between the isolated end 102A and the coupled end 102C.
  • the integral coupler structure formed by the first metal layer 101, the second metal layer 102, the first dielectric layer 100A, and the second dielectric layer 100B can obtain a wider operating frequency band than the ⁇ /4 directional coupler, and can be realized.
  • the design purpose of the broadband Theoretically, if the characteristic impedance of each coupled coupler meets the set conditions, the multi-section structure can have infinite directionality and constant input at all frequencies regardless of the coupling degree requirement. impedance.
  • the branch branch in the middle of the first metal layer 101 and the branch branch in the middle of the second metal layer 102 form an overlapping relationship in the upper and lower layer structure relationship, thereby achieving a wide width.
  • Side coupling That is to say, broad-edge coupling is formed by the upper and lower overlapping relationship of the branches of the central branch of the first metal layer 101 and the second metal layer 102.
  • the leftmost branch branch of the first metal layer 101 and the leftmost branch branch of the second metal layer 102, and the most of the first metal layer 101 form a narrow side coupling, respectively.
  • the input end 101A and the coupling end 102C are integrally located on the left side of the bridge, and the through end 101C and the coupling end 102C are located on the right side of the bridge as a whole.
  • the first metal layer 101 when there is an alternating current i flowing along the input end 101A to the through end 101C, and passing through the first branch from there. Since the direction of the second metal layer 102 from the lower right to the upper left and the direction of the first metal line from the lower left to the upper right are close to each other, energy and energy are coupled in the second metal layer 102 due to the coupling of the narrow side and the wide side. It is coupled both by an electric field (represented by a coupling capacitance) and by a magnetic field (represented by a coupled inductance).
  • the first current induced in the second metal layer 102 is ic4 and the second current ic2 by coupling.
  • a third current iL is induced on the second metal layer 102 due to the action of the alternating magnetic field of i1.
  • the direction of the third current iL is opposite to the direction of i1, so energy is input from the input terminal 101A, further forming the coupling end 102C, and the phase of the ic2 and the magnetic coupling current iL at the isolated end 102A due to the electric coupling current
  • the offset is superimposed, thereby achieving the isolated end 102A, which is more convenient for power synthesis in practical assembly applications.
  • a 3dB 90° bridge is used.
  • the structure of the bridge of FIG. 1 and FIG. 2 can be improved according to the requirements of the specific use scenario, such as increasing the number of couplers of the coupler, changing the overlapping position of the coupler, and overlapping. Quantity to meet the needs of use.
  • an embodiment of the present invention further provides an electronic terminal or an electronic device, which includes the bridge in the above embodiment.
  • the bridge in the embodiment of the present application has a first dielectric layer, a second dielectric layer, a first metal layer, and a second metal layer, wherein the first metal layer is disposed above the first dielectric layer, and the second a metal layer disposed between the first dielectric layer and the second dielectric layer, the first metal layer is provided with a first branch, the second metal layer is provided with a second branch, the first metal layer
  • the first branch included and the second branch included in the second metal layer are configured to form a wide-side coupling and a narrow-side coupling, thereby improving the directionality, power, integration, etc. of the bridge. Aspect performance, while also achieving a constant input impedance.
  • generating may refer to the relative position relative to another layer.
  • One layer “generates”, “is”, or “at” another layer or another layer that may be in direct contact with another layer or may have one or more intervening layers.
  • a layer “on” layer may be in direct contact with the layer or may have one or more intervening layers.
  • the terms “include” and “comprise” and variations thereof mean The term “or” is inclusive, meaning and/or; the phrase “associated with” and “associated therewith” and variations thereof may be meant to include , included, “connected with”, included, included, “connected to” or “connected to”, “coupled to” or “coupled with”, “communicable with” “cooperating with”, interlaced, juxtaposed, close to, “constrained to” or “constrained with", possessed, “having a property of”, etc.; and the term “controller” means controlling at least one operation Any device, system or component thereof, such device may be implemented in hardware, firmware or software, or in some combination of at least two of hardware, firmware and software.
  • the expression “include” or “may include” refers to the existence of the corresponding function, operation or element, and does not limit one or more additional functions, operations or elements.
  • terms such as “include” and / or “have” are understood to mean certain features, numbers, steps, operations, components, elements or combinations thereof, and are not to be construed as being excluded. The existence or additional possibility of one or more other characteristics, numbers, steps, operations, constituent elements, elements or combinations thereof.
  • the expression “A or B”, “at least one of A or / and B” or “one or more of A or / and B” may include all possible combinations of the listed items.
  • the expression “A or B”, “at least one of A and B” or “at least one of A or B” may include: (1) at least one A, (2) at least one B, or (3) at least One A and at least one B.
  • first, second, the first or “the second” as used in the various embodiments of the present disclosure may modify various components regardless of order and/or importance. , but these statements do not limit the corresponding components. The above statements are only used for the purpose of distinguishing components from other components.
  • the first user device and the second user device represent different user devices, although both are user devices.
  • a first element could be termed a second element, and a second element could be termed a first element, without departing from the scope of the present disclosure.
  • an element eg., a first element
  • another element e.g., a second element
  • An element e.g., a second element or “connected to” another element (e.g., a second element) is understood to mean that the one element is directly connected to the other element or the one element is via the other element (e.g., The third component is indirectly connected to the other component. Rather, it will be understood that when an element (e.g., a first element) is referred to as “directly connected” or “directly connected” to another element (the second element), then no element (e.g., the third element) is inserted in either Between the people.
  • a processor adapted to (or configured to) perform A, B, and C may mean a dedicated processor (eg, an embedded processor) for performing only the corresponding operations or may be stored in the storage device by execution
  • a general purpose processor eg, a central processing unit (CPU) or an application processor (AP) in which one or more software programs perform corresponding operations.

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  • Bridges Or Land Bridges (AREA)
  • Amplifiers (AREA)

Abstract

Un mode de réalisation de la présente invention est un pont, comprenant : une première couche de milieu, une seconde couche de milieu, une première couche métallique et une seconde couche métallique ; la première couche métallique est disposée à une position au-dessus de la première couche de milieu, et la seconde couche métallique étant disposée entre la première couche de milieu et la seconde couche de milieu ; ou, la seconde couche métallique est disposée à une position au-dessus de la première couche de milieu, et la première couche métallique est disposée entre la première couche de milieu et la seconde couche de milieu. La première couche métallique comprend une première ramification, et la seconde couche métallique comprend une seconde ramification, la première ramification constituée par la première couche métallique et la seconde ramification constituée par la seconde couche métallique étant configurées pour former un couplage transversal et un couplage latéral étroit entre celles-ci, ce qui permet d'améliorer les performances du pont en termes de directionnalité, de constance de résistance d'entrée, de puissance et d'intégration.
PCT/CN2018/085643 2018-01-12 2018-05-04 Pont Ceased WO2019136886A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201820055932.XU CN208127394U (zh) 2018-01-12 2018-01-12 电桥
CN201820055932.X 2018-01-12

Publications (1)

Publication Number Publication Date
WO2019136886A1 true WO2019136886A1 (fr) 2019-07-18

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110011020B (zh) * 2019-04-11 2021-12-03 上海剑桥科技股份有限公司 Pcb耦合器
CN119944264A (zh) * 2025-03-14 2025-05-06 纳微半导体科技(合肥)有限公司 一种微带合路器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010070393A1 (fr) * 2008-12-17 2010-06-24 Fci Procédé de fabrication de dispositifs ci de communication sans contact
EP2642582A2 (fr) * 2012-03-23 2013-09-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Elément de pontage électrique, notamment pour les cellules d'un accumulateur d'énergie
CN104300195A (zh) * 2014-10-13 2015-01-21 世达普(苏州)通信设备有限公司 超宽带表贴式3dB电桥
CN107104259A (zh) * 2017-05-25 2017-08-29 东莞质研工业设计服务有限公司 一种3dB电桥
CN107528112A (zh) * 2017-08-15 2017-12-29 成都盛和芯创半导体有限公司 宽带带状线耦合电桥
CN107611551A (zh) * 2017-08-30 2018-01-19 南京理工大学 一种ltcc多层结构宽带90°混合电桥

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010070393A1 (fr) * 2008-12-17 2010-06-24 Fci Procédé de fabrication de dispositifs ci de communication sans contact
EP2642582A2 (fr) * 2012-03-23 2013-09-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Elément de pontage électrique, notamment pour les cellules d'un accumulateur d'énergie
CN104300195A (zh) * 2014-10-13 2015-01-21 世达普(苏州)通信设备有限公司 超宽带表贴式3dB电桥
CN107104259A (zh) * 2017-05-25 2017-08-29 东莞质研工业设计服务有限公司 一种3dB电桥
CN107528112A (zh) * 2017-08-15 2017-12-29 成都盛和芯创半导体有限公司 宽带带状线耦合电桥
CN107611551A (zh) * 2017-08-30 2018-01-19 南京理工大学 一种ltcc多层结构宽带90°混合电桥

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