WO2019119980A1 - Electrostatic protection circuit, integrated circuit chip, and household appliance - Google Patents
Electrostatic protection circuit, integrated circuit chip, and household appliance Download PDFInfo
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- WO2019119980A1 WO2019119980A1 PCT/CN2018/112738 CN2018112738W WO2019119980A1 WO 2019119980 A1 WO2019119980 A1 WO 2019119980A1 CN 2018112738 W CN2018112738 W CN 2018112738W WO 2019119980 A1 WO2019119980 A1 WO 2019119980A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
Definitions
- the present application relates to the field of integrated circuit technology, and in particular, to an electrostatic protection circuit, an integrated circuit chip, and a household appliance.
- the high-voltage integrated circuit is a gate drive circuit with undervoltage protection and logic control. It combines power electronics with semiconductor technology and gradually replaces traditional discrete components. It is increasingly used in IGBTs and high power. The field of MOSFET driving. At HVIC (High ESD protection is an important part of the design when Voltage Integrated Circuit (HV Integrated Circuit) is designed.
- the structure includes a diode (1) and a diode (2) at the input end, an integrated circuit domain (3), a diode (4) at the output end, and a diode (5).
- the protection mechanism is simple input and output diode protection, and the circuit structure has limited impact resistance.
- the main purpose of the present application is to propose an electrostatic protection circuit designed to improve the impact resistance of an integrated circuit.
- the electrostatic protection circuit proposed by the present application comprises a circuit unit to be protected, an input electrostatic protection unit and an output electrostatic protection unit, and the input electrostatic protection unit is connected to the input end of the circuit unit to be protected and the upper level circuit.
- the output electrostatic protection unit is connected between the output end of the circuit unit to be protected and the next-stage circuit.
- the input electrostatic protection unit includes a first diode and a first resistor, and an anode of the first diode is connected to an input end of the circuit unit to be protected and an end of the first resistor.
- the cathode of the first diode is connected to a power supply, and the other end of the first resistor is connected to the upper stage circuit.
- the input electrostatic protection unit further includes a second diode, and a cathode of the second diode is connected to a common end between the first resistor and the upper-level circuit, and the second The anode of the pole tube is grounded.
- the output electrostatic protection unit includes a third diode, and an anode of the third diode is connected to an output end of the circuit unit to be protected and a next-stage circuit, and the third The cathode of the pole tube is connected to a power supply.
- the output electrostatic protection unit further includes a fourth diode, a cathode of the fourth diode is connected to an anode of the third diode, and an anode of the fourth diode Ground.
- the output ESD protection unit further includes a first inverter and a second inverter connected in series, and an input end of the first inverter is connected to an output end of the circuit unit to be protected An output end of the first inverter is connected to an input end of the second inverter, an output end of the second inverter is opposite to an anode and a fourth diode of the third diode Cathode connection.
- the present application also provides an integrated circuit chip, the chip includes an electrostatic protection circuit including a circuit unit to be protected, an input electrostatic protection unit, and an output electrostatic protection unit, the input electrostatic protection unit being connected to the circuit unit to be protected
- the output electrostatic protection unit is connected between the input end and the upper stage circuit between the output end of the circuit unit to be protected and the next stage circuit.
- the input electrostatic protection unit includes a first diode and a first resistor, and an anode of the first diode is connected to an input end of the circuit unit to be protected and an end of the first resistor.
- the cathode of the first diode is connected to a power supply, and the other end of the first resistor is connected to the upper stage circuit.
- the input electrostatic protection unit further includes a second diode, and a cathode of the second diode is connected to a common end between the first resistor and the upper-level circuit, and the second The anode of the pole tube is grounded.
- the output electrostatic protection unit includes a third diode, and an anode of the third diode is connected to an output end of the circuit unit to be protected and a next-stage circuit, and the third The cathode of the pole tube is connected to a power supply.
- the output electrostatic protection unit further includes a fourth diode, a cathode of the fourth diode is connected to an anode of the third diode, and an anode of the fourth diode Ground.
- the output ESD protection unit further includes a first inverter and a second inverter connected in series, and an input end of the first inverter is connected to an output end of the circuit unit to be protected An output end of the first inverter is connected to an input end of the second inverter, an output end of the second inverter is opposite to an anode and a fourth diode of the third diode Cathode connection.
- the present application further provides a home appliance, which includes the integrated circuit chip as described above, and the integrated circuit chip refers to the above implementation, and details are not described herein again.
- the household appliance is an air conditioner or a refrigerator.
- the electrostatic protection circuit of the technical solution of the present application and an integrated circuit chip including the same, the integrated circuit chip is usually HVIC (High Voltage Integrated Circuit, high voltage integrated circuit), the circuit unit to be protected in HVIC usually includes a gate drive circuit with undervoltage protection, logic control, etc., when the circuit unit to be protected is subjected to high voltage, high current, strong electromagnetic interference, frequent insertion When the high-low temperature working environment is pulled out, it is easy to generate electrostatic discharge. At this time, by adding an input electrostatic protection unit at the input end of the circuit unit to be protected and adding an output electrostatic protection unit at the output end of the circuit unit to be protected, the upper level can be effectively resisted. Or the surge impact of the lower-level circuit on the protection circuit.
- HVIC High Voltage Integrated Circuit, high voltage integrated circuit
- the circuit unit to be protected in HVIC usually includes a gate drive circuit with undervoltage protection, logic control, etc., when the circuit unit to be protected is subjected to high voltage, high current, strong electromagnetic
- FIG. 1 is a schematic diagram of a circuit structure of an exemplary static electricity protection circuit of the present application
- FIG. 2 is a schematic structural diagram of a circuit of an embodiment of an electrostatic protection circuit of the present application.
- Label name Label name 100 Protection circuit unit D4 Fourth diode 200 Input electrostatic protection unit R1 First resistance 300 Output electrostatic protection unit Q1 First inverter D1 First diode Q2 Second inverter D2 Second diode VCC Power supply D3 Third diode
- first”, “second”, and the like in this application are used for the purpose of description only, and are not to be construed as indicating or implying their relative importance or implicitly indicating the number of technical features indicated.
- features defining “first” or “second” may include at least one of the features, either explicitly or implicitly.
- the technical solutions between the various embodiments may be combined with each other, but must be based on the realization of those skilled in the art, and when the combination of the technical solutions is contradictory or impossible to implement, it should be considered that the combination of the technical solutions does not exist. Nor is it within the scope of protection required by this application.
- the application proposes an electrostatic protection circuit.
- FIG. 2 is a schematic structural diagram of an embodiment of an electrostatic protection circuit of the present application.
- the static electricity protection circuit includes a circuit unit 100 to be protected, an input electrostatic protection unit 200, and an output static electricity protection unit 300.
- the input static electricity protection unit 200 is connected to the circuit unit 100 to be protected.
- the output electrostatic protection unit 300 is connected between the output terminal VOUT of the circuit unit 100 to be protected and the next stage circuit.
- This ESD protection circuit is usually used in integrated circuit chips, especially HVIC (High Voltage Integrated).
- the high-voltage integrated circuit the main circuit module in the HVIC, that is, the circuit unit 100 to be protected, generally includes a gate driving circuit having a function of undervoltage protection, logic control, etc., when the circuit unit 100 to be protected is subjected to high voltage and high current.
- a gate driving circuit having a function of undervoltage protection, logic control, etc.
- electrostatic discharge is easily generated.
- the input electrostatic protection unit 200 and the output of the circuit unit 100 to be protected are increased by the input terminal VIN of the circuit unit 100 to be protected.
- the terminal VOUT increases the output electrostatic protection unit 300, and can effectively resist the surge impact of the upper or lower circuit to be protected by the protection circuit.
- the input electrostatic protection unit 200 includes a first diode D1 and a first resistor R1, and an anode of the first diode D1 and an input terminal VIN of the circuit unit 100 to be protected One end of a resistor R1 is connected, the cathode of the first diode D1 is connected to the power supply VCC, and the other end of the first resistor R1 is connected to the upper stage circuit.
- the protection circuit unit 100 When the upper-stage circuit is subjected to a forward surge impact on the input terminal VIN of the protection circuit unit 100, the current flowing to the power supply VCC is reduced by the cooperation of the first diode D1 and the first resistor R1, thereby reducing The possibility that the protection circuit unit 100 is subjected to a Latch-up phenomenon is to reduce the possibility that the circuit unit 100 to be protected is damaged by the forward surge of the upper circuit.
- the input electrostatic protection unit 200 further includes a second diode D2, and a cathode of the second diode D2 is connected to a common terminal between the first resistor R1 and the upper stage circuit, and the second diode The anode of D2 is grounded.
- the current flowing to the power supply VCC is also reduced by the cooperation of the second diode D2 and the first resistor R1. It is also possible to reduce the possibility of a latch-up phenomenon of the circuit unit 100 to be protected, that is, to reduce the possibility that the circuit unit 100 to be protected is damaged by the negative surge of the upper circuit.
- the reverse surge impact of the to-be-protected circuit unit 100 on the upper circuit can also be prevented by inputting the electrostatic protection unit 200.
- the output electrostatic protection unit 300 includes a third diode D3, and the anode of the third diode D3 is connected to the output terminal VOUT of the circuit unit 100 to be protected, and the next stage circuit.
- the cathode of the third diode D3 is connected to the power supply VCC.
- the output electrostatic protection unit 300 further includes a fourth diode D4, and a cathode of the fourth diode D4 is connected to an anode of the third diode D3, the fourth two The anode of the pole D4 is grounded.
- the output static electricity protection unit 300 further includes a first inverter Q1 and a second inverter Q2 connected in series, the input end of the first inverter Q1 and the circuit unit to be protected An output terminal VOUT of 100 is connected, an output end of the first inverter Q1 is connected to an input end of the second inverter Q2, and an output end of the second inverter Q2 is connected to the third diode The anode of the tube D3 and the cathode of the fourth diode D4 are connected.
- the effective signal outputted to the next stage circuit by the circuit unit 100 to be protected remains unchanged, and when the next stage circuit has a reverse surge impact on the output terminal VOUT of the protection circuit unit 100,
- the surge impact of the next-stage circuit to the protection circuit unit 100 is isolated, and the possibility that the circuit unit 100 to be protected is damaged by the surge of the lower-level circuit is reduced. Sex.
- the present application further provides an integrated circuit chip, which includes the above-mentioned electrostatic protection circuit.
- the structure, working principle and beneficial effects of the electrostatic protection circuit are all referred to the above embodiments, and are not described herein again.
- the present application further provides a household appliance, which may be an air conditioner or a refrigerator.
- the home appliance includes an integrated circuit chip as described above, and therefore, reference is made to the embodiment of the above-described static electricity protection circuit, and no longer Narration.
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Abstract
Description
技术领域Technical field
本申请涉及集成电路技术领域,特别涉及一种静电防护电路、集成电路芯片及家用电器。The present application relates to the field of integrated circuit technology, and in particular, to an electrostatic protection circuit, an integrated circuit chip, and a household appliance.
背景技术Background technique
高压集成电路是一种带有欠压保护、逻辑控制等功能的栅极驱动电路,它将电力电子与半导体技术结合,逐渐取代传统的分立元件,越来越多地被应用在IGBT、大功率MOSFET的驱动领域。在HVIC(High Voltage Integrated Circuit,高压集成电路)设计时, ESD防护是必须考虑的重要环节。The high-voltage integrated circuit is a gate drive circuit with undervoltage protection and logic control. It combines power electronics with semiconductor technology and gradually replaces traditional discrete components. It is increasingly used in IGBTs and high power. The field of MOSFET driving. At HVIC (High ESD protection is an important part of the design when Voltage Integrated Circuit (HV Integrated Circuit) is designed.
目前主流的HVIC内ESD防护结构如图1所示:The current mainstream HVIC ESD protection structure is shown in Figure 1:
该结构包括输入端的二极管(1)及二极管(2),集成电路域(3),输出端的二极管(4)及二极管(5)。The structure includes a diode (1) and a diode (2) at the input end, an integrated circuit domain (3), a diode (4) at the output end, and a diode (5).
其保护机理为简单的输入输出二极管保护,该电路结构抗冲击能力有限。The protection mechanism is simple input and output diode protection, and the circuit structure has limited impact resistance.
申请内容Application content
本申请的主要目的是提出一种静电防护电路,旨在提高集成电路的抗冲击能力。The main purpose of the present application is to propose an electrostatic protection circuit designed to improve the impact resistance of an integrated circuit.
为实现上述目的,本申请提出的静电防护电路,包括待防护电路单元、输入静电防护单元及输出静电防护单元,所述输入静电防护单元连接在待防护电路单元的输入端与上一级电路之间,所述输出静电防护单元连接在待防护电路单元的输出端与下一级电路之间。To achieve the above objective, the electrostatic protection circuit proposed by the present application comprises a circuit unit to be protected, an input electrostatic protection unit and an output electrostatic protection unit, and the input electrostatic protection unit is connected to the input end of the circuit unit to be protected and the upper level circuit. The output electrostatic protection unit is connected between the output end of the circuit unit to be protected and the next-stage circuit.
在一实施例中,所述输入静电防护单元包括第一二极管及第一电阻,所述第一二极管的阳极与所述待防护电路单元的输入端、第一电阻的一端连接,第一二极管的阴极与供电电源连接,所述第一电阻的另一端与上一级电路连接。In one embodiment, the input electrostatic protection unit includes a first diode and a first resistor, and an anode of the first diode is connected to an input end of the circuit unit to be protected and an end of the first resistor. The cathode of the first diode is connected to a power supply, and the other end of the first resistor is connected to the upper stage circuit.
在一实施例中,所述输入静电防护单元还包括第二二极管,所述第二二极管的阴极与第一电阻、上一级电路之间的公共端连接,所述第二二极管的阳极接地。In an embodiment, the input electrostatic protection unit further includes a second diode, and a cathode of the second diode is connected to a common end between the first resistor and the upper-level circuit, and the second The anode of the pole tube is grounded.
在一实施例中,所述输出静电防护单元包括第三二极管,所述第三二极管的阳极与所述待防护电路单元的输出端、下一级电路连接,所述第三二极管的阴极与供电电源连接。In an embodiment, the output electrostatic protection unit includes a third diode, and an anode of the third diode is connected to an output end of the circuit unit to be protected and a next-stage circuit, and the third The cathode of the pole tube is connected to a power supply.
在一实施例中,所述输出静电防护单元还包括第四二极管,所述第四二极管的阴极与所述第三二极管的阳极连接,所述第四二极管的阳极接地。In an embodiment, the output electrostatic protection unit further includes a fourth diode, a cathode of the fourth diode is connected to an anode of the third diode, and an anode of the fourth diode Ground.
在一实施例中,所述输出静电防护单元还包括串联连接的第一反相器和第二反相器,所述第一反相器的输入端与所述待防护电路单元的输出端连接,所述第一反相器的输出端与所述第二反相器的输入端连接,所述第二反相器的输出端与所述第三二极管的阳极、第四二极管的阴极连接。In an embodiment, the output ESD protection unit further includes a first inverter and a second inverter connected in series, and an input end of the first inverter is connected to an output end of the circuit unit to be protected An output end of the first inverter is connected to an input end of the second inverter, an output end of the second inverter is opposite to an anode and a fourth diode of the third diode Cathode connection.
本申请还提供一种集成电路芯片,该芯片包括静电防护电路,该静电防护电路包括待防护电路单元、输入静电防护单元及输出静电防护单元,所述输入静电防护单元连接在待防护电路单元的输入端与上一级电路之间,所述输出静电防护单元连接在待防护电路单元的输出端与下一级电路之间。The present application also provides an integrated circuit chip, the chip includes an electrostatic protection circuit including a circuit unit to be protected, an input electrostatic protection unit, and an output electrostatic protection unit, the input electrostatic protection unit being connected to the circuit unit to be protected The output electrostatic protection unit is connected between the input end and the upper stage circuit between the output end of the circuit unit to be protected and the next stage circuit.
在一实施例中,所述输入静电防护单元包括第一二极管及第一电阻,所述第一二极管的阳极与所述待防护电路单元的输入端、第一电阻的一端连接,第一二极管的阴极与供电电源连接,所述第一电阻的另一端与上一级电路连接。In one embodiment, the input electrostatic protection unit includes a first diode and a first resistor, and an anode of the first diode is connected to an input end of the circuit unit to be protected and an end of the first resistor. The cathode of the first diode is connected to a power supply, and the other end of the first resistor is connected to the upper stage circuit.
在一实施例中,所述输入静电防护单元还包括第二二极管,所述第二二极管的阴极与第一电阻、上一级电路之间的公共端连接,所述第二二极管的阳极接地。In an embodiment, the input electrostatic protection unit further includes a second diode, and a cathode of the second diode is connected to a common end between the first resistor and the upper-level circuit, and the second The anode of the pole tube is grounded.
在一实施例中,所述输出静电防护单元包括第三二极管,所述第三二极管的阳极与所述待防护电路单元的输出端、下一级电路连接,所述第三二极管的阴极与供电电源连接。In an embodiment, the output electrostatic protection unit includes a third diode, and an anode of the third diode is connected to an output end of the circuit unit to be protected and a next-stage circuit, and the third The cathode of the pole tube is connected to a power supply.
在一实施例中,所述输出静电防护单元还包括第四二极管,所述第四二极管的阴极与所述第三二极管的阳极连接,所述第四二极管的阳极接地。In an embodiment, the output electrostatic protection unit further includes a fourth diode, a cathode of the fourth diode is connected to an anode of the third diode, and an anode of the fourth diode Ground.
在一实施例中,所述输出静电防护单元还包括串联连接的第一反相器和第二反相器,所述第一反相器的输入端与所述待防护电路单元的输出端连接,所述第一反相器的输出端与所述第二反相器的输入端连接,所述第二反相器的输出端与所述第三二极管的阳极、第四二极管的阴极连接。In an embodiment, the output ESD protection unit further includes a first inverter and a second inverter connected in series, and an input end of the first inverter is connected to an output end of the circuit unit to be protected An output end of the first inverter is connected to an input end of the second inverter, an output end of the second inverter is opposite to an anode and a fourth diode of the third diode Cathode connection.
此外,本申请还提供一种家用电器,其中,包括如上所述的集成电路芯片,集成电路芯片参照上述实现,此处不再赘述。In addition, the present application further provides a home appliance, which includes the integrated circuit chip as described above, and the integrated circuit chip refers to the above implementation, and details are not described herein again.
在一实施例中,所述家用电器为空调器或冰箱。In an embodiment, the household appliance is an air conditioner or a refrigerator.
本申请技术方案的静电防护电路及包括其的集成电路芯片,该集成电路芯片中通常为HVIC(High Voltage Integrated Circuit,高压集成电路),HVIC中的待防护电路单元通常包括具有欠压保护、逻辑控制等功能的栅极驱动电路,当该待防护电路单元遭受高电压、大电流、强电磁干扰、频繁插拔及高低温工作环境时,容易产生静电放电,此时,通过在待防护电路单元的输入端增加输入静电防护单元,以及在待防护电路单元的输出端增加输出静电防护单元,可以有效抗击上级或者下级电路对待防护电路所产生的浪涌冲击。The electrostatic protection circuit of the technical solution of the present application and an integrated circuit chip including the same, the integrated circuit chip is usually HVIC (High Voltage Integrated Circuit, high voltage integrated circuit), the circuit unit to be protected in HVIC usually includes a gate drive circuit with undervoltage protection, logic control, etc., when the circuit unit to be protected is subjected to high voltage, high current, strong electromagnetic interference, frequent insertion When the high-low temperature working environment is pulled out, it is easy to generate electrostatic discharge. At this time, by adding an input electrostatic protection unit at the input end of the circuit unit to be protected and adding an output electrostatic protection unit at the output end of the circuit unit to be protected, the upper level can be effectively resisted. Or the surge impact of the lower-level circuit on the protection circuit.
附图说明DRAWINGS
为了更清楚地说明本申请实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图示出的结构获得其他的附图。In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings to be used in the embodiments or the prior art description will be briefly described below. Obviously, the drawings in the following description are only It is a certain embodiment of the present application, and other drawings can be obtained according to the structures shown in the drawings without any creative work for those skilled in the art.
图1为本申请示例性技术静电防护电路的电路结构示意图;1 is a schematic diagram of a circuit structure of an exemplary static electricity protection circuit of the present application;
图2为本申请静电防护电路一实施例的电路结构示意图。FIG. 2 is a schematic structural diagram of a circuit of an embodiment of an electrostatic protection circuit of the present application.
附图标号说明:Description of the reference numerals:
本申请目的的实现、功能特点及优点将结合实施例,参照附图做进一步说明。The implementation, functional features and advantages of the present application will be further described with reference to the accompanying drawings.
具体实施方式Detailed ways
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请的一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application are clearly and completely described in the following with reference to the drawings in the embodiments of the present application. It is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present application without departing from the inventive scope are the scope of the present application.
需要说明,若本申请实施例中所有方向性指示(诸如上、下、左、右、前、后……)仅用于解释在某一特定姿态(如附图所示)下各部件之间的相对位置关系、运动情况等,如果该特定姿态发生改变时,则该方向性指示也相应地随之改变。It should be noted that all directional indications (such as up, down, left, right, front, back, ...) in the embodiments of the present application are only used to explain between components in a certain posture (as shown in the drawing). The relative positional relationship, the motion situation, and the like, if the specific posture changes, the directional indication also changes accordingly.
另外,在本申请中涉及“第一”、“第二”等的描述仅用于描述目的,而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外,各个实施例之间的技术方案可以相互结合,但是必须是以本领域普通技术人员能够实现为基础,当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在,也不在本申请要求的保护范围之内。In addition, the descriptions of "first", "second", and the like in this application are used for the purpose of description only, and are not to be construed as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Thus, features defining "first" or "second" may include at least one of the features, either explicitly or implicitly. In addition, the technical solutions between the various embodiments may be combined with each other, but must be based on the realization of those skilled in the art, and when the combination of the technical solutions is contradictory or impossible to implement, it should be considered that the combination of the technical solutions does not exist. Nor is it within the scope of protection required by this application.
本申请提出一种静电防护电路。The application proposes an electrostatic protection circuit.
参照图2,图2为本申请静电防护电路一实施例的结构示意图。Referring to FIG. 2, FIG. 2 is a schematic structural diagram of an embodiment of an electrostatic protection circuit of the present application.
在本申请实施例中,如图2所述,该静电防护电路包括待防护电路单元100、输入静电防护单元200及输出静电防护单元300,所述输入静电防护单元200连接在待防护电路单元100的输入端VIN与上一级电路之间,所述输出静电防护单元300连接在待防护电路单元100的输出端VOUT与下一级电路之间。In the embodiment of the present application, as shown in FIG. 2, the static electricity protection circuit includes a circuit unit 100 to be protected, an input electrostatic protection unit 200, and an output static electricity protection unit 300. The input static electricity protection unit 200 is connected to the circuit unit 100 to be protected. Between the input terminal VIN and the upper stage circuit, the output electrostatic protection unit 300 is connected between the output terminal VOUT of the circuit unit 100 to be protected and the next stage circuit.
该静电防护电路通常应用于集成电路芯片中,尤其是HVIC(High Voltage Integrated Circuit,高压集成电路)中,HVIC中的主电路模块即待防护电路单元100通常包括具有欠压保护、逻辑控制等功能的栅极驱动电路,当该待防护电路单元100遭受高电压、大电流、强电磁干扰、频繁插拔及高低温工作环境时,容易产生静电放电,此时,通过在待防护电路单元100的输入端VIN增加输入静电防护单元200,以及在待防护电路单元100的输出端VOUT增加输出静电防护单元300,可以有效抗击上级或者下级电路对待防护电路所产生的浪涌冲击。This ESD protection circuit is usually used in integrated circuit chips, especially HVIC (High Voltage Integrated). In the circuit, the high-voltage integrated circuit, the main circuit module in the HVIC, that is, the circuit unit 100 to be protected, generally includes a gate driving circuit having a function of undervoltage protection, logic control, etc., when the circuit unit 100 to be protected is subjected to high voltage and high current. In the case of strong electromagnetic interference, frequent insertion and removal, and high and low temperature working environment, electrostatic discharge is easily generated. At this time, the input electrostatic protection unit 200 and the output of the circuit unit 100 to be protected are increased by the input terminal VIN of the circuit unit 100 to be protected. The terminal VOUT increases the output electrostatic protection unit 300, and can effectively resist the surge impact of the upper or lower circuit to be protected by the protection circuit.
在一实施例中,所述输入静电防护单元200包括第一二极管D1及第一电阻R1,所述第一二极管D1的阳极与所述待防护电路单元100的输入端VIN、第一电阻R1的一端连接,第一二极管D1的阴极与供电电源VCC连接,所述第一电阻R1的另一端与上一级电路连接。In an embodiment, the input electrostatic protection unit 200 includes a first diode D1 and a first resistor R1, and an anode of the first diode D1 and an input terminal VIN of the circuit unit 100 to be protected One end of a resistor R1 is connected, the cathode of the first diode D1 is connected to the power supply VCC, and the other end of the first resistor R1 is connected to the upper stage circuit.
当上一级电路对待防护电路单元100的输入端VIN发生正向浪涌冲击时,通过第一二极管D1及第一电阻R1的共同作用,使得流向供电电源VCC的电流减小,从而降低待防护电路单元100发生Latch-up(闩锁效应)现象的可能性,即降低待防护电路单元100受到上级电路正向浪涌冲击而被破坏的可能性。When the upper-stage circuit is subjected to a forward surge impact on the input terminal VIN of the protection circuit unit 100, the current flowing to the power supply VCC is reduced by the cooperation of the first diode D1 and the first resistor R1, thereby reducing The possibility that the protection circuit unit 100 is subjected to a Latch-up phenomenon is to reduce the possibility that the circuit unit 100 to be protected is damaged by the forward surge of the upper circuit.
所述输入静电防护单元200还包括第二二极管D2,所述第二二极管D2的阴极与第一电阻R1、上一级电路之间的公共端连接,所述第二二极管D2的阳极接地。The input electrostatic protection unit 200 further includes a second diode D2, and a cathode of the second diode D2 is connected to a common terminal between the first resistor R1 and the upper stage circuit, and the second diode The anode of D2 is grounded.
当上一级电路对待防护电路单元100的输入端VIN发生负向浪涌冲击时,通过第二二极管D2及第一电阻R1的共同作用,使得流向供电电源VCC的电流也减小,从而也能降低待防护电路单元100发生Latch-up(闩锁效应)现象的可能性,即降低待防护电路单元100受到上级电路负向浪涌冲击而被破坏的可能性。When the upper-level circuit is subjected to a negative surge impact on the input terminal VIN of the protection circuit unit 100, the current flowing to the power supply VCC is also reduced by the cooperation of the second diode D2 and the first resistor R1. It is also possible to reduce the possibility of a latch-up phenomenon of the circuit unit 100 to be protected, that is, to reduce the possibility that the circuit unit 100 to be protected is damaged by the negative surge of the upper circuit.
当然,通过输入静电防护单元200也可防止该待防护电路单元100对上级电路的反向浪涌冲击。Of course, the reverse surge impact of the to-be-protected circuit unit 100 on the upper circuit can also be prevented by inputting the electrostatic protection unit 200.
在一实施例中,输出静电防护单元300包括第三二极管D3,所述第三二极管D3的阳极与所述待防护电路单元100的输出端VOUT、下一级电路连接,所述第三二极管D3的阴极与供电电源VCC连接。In an embodiment, the output electrostatic protection unit 300 includes a third diode D3, and the anode of the third diode D3 is connected to the output terminal VOUT of the circuit unit 100 to be protected, and the next stage circuit. The cathode of the third diode D3 is connected to the power supply VCC.
当待防护电路单元100遭受正向浪涌冲击而被破坏时,通过第三二极管D3的作用,使得瞬间大电流通过第三二极管D3消耗,从而使得流向下级电路的电流减小,将损害保留在本级电路,有效降低下级电路遭受正向浪涌冲击而被破坏的可能性。When the circuit to be protected 100 is damaged by a forward surge, the instantaneous large current is consumed by the third diode D3 by the action of the third diode D3, so that the current flowing to the lower stage circuit is reduced. The damage is retained in the circuit of this level, effectively reducing the possibility that the lower circuit is damaged by the forward surge.
在一实施例中,所述输出静电防护单元300还包括第四二极管D4,所述第四二极管D4的阴极与所述第三二极管D3的阳极连接,所述第四二极管D4的阳极接地。In an embodiment, the output electrostatic protection unit 300 further includes a fourth diode D4, and a cathode of the fourth diode D4 is connected to an anode of the third diode D3, the fourth two The anode of the pole D4 is grounded.
当待防护电路单元100遭受负向浪涌冲击而被破坏时,通过第四二极管D4的作用,使得瞬间大电流通过第四二极管D4消耗,从而使得流向下级电路的电流减小,将损害保留在本级电路,有效降低下级电路遭受负向浪涌冲击而被破坏的可能性。When the circuit to be protected 100 is damaged by a negative surge, the instantaneous large current is consumed by the fourth diode D4 by the action of the fourth diode D4, so that the current flowing to the lower circuit is reduced. The damage is retained in the circuit of this level, effectively reducing the possibility that the lower circuit is damaged by the negative surge impact.
在一实施例中,所述输出静电防护单元300还包括串联连接的第一反相器Q1和第二反相器Q2,所述第一反相器Q1的输入端与所述待防护电路单元100的输出端VOUT连接,所述第一反相器Q1的输出端与所述第二反相器Q2的输入端连接,所述第二反相器Q2的输出端与所述第三二极管D3的阳极、第四二极管D4的阴极连接。In an embodiment, the output static electricity protection unit 300 further includes a first inverter Q1 and a second inverter Q2 connected in series, the input end of the first inverter Q1 and the circuit unit to be protected An output terminal VOUT of 100 is connected, an output end of the first inverter Q1 is connected to an input end of the second inverter Q2, and an output end of the second inverter Q2 is connected to the third diode The anode of the tube D3 and the cathode of the fourth diode D4 are connected.
通过两个串联的反相器,使得待防护电路单元100输出至下一级电路的有效信号保持不变,并且当下一级电路对待防护电路单元100的输出端VOUT发生反向浪涌冲击时,通过第一反相器Q1、第二反相器Q2的共同作用,隔离下一级电路对待防护电路单元100的浪涌冲击,降低待防护电路单元100受到下级电路浪涌冲击而被破坏的可能性。By means of two inverters connected in series, the effective signal outputted to the next stage circuit by the circuit unit 100 to be protected remains unchanged, and when the next stage circuit has a reverse surge impact on the output terminal VOUT of the protection circuit unit 100, By the cooperation of the first inverter Q1 and the second inverter Q2, the surge impact of the next-stage circuit to the protection circuit unit 100 is isolated, and the possibility that the circuit unit 100 to be protected is damaged by the surge of the lower-level circuit is reduced. Sex.
本申请还提供一种集成电路芯片,该集成电路芯片包括上述静电防护电路,该静电防护电路的结构、工作原理以及所带来的有益效果,均参照上述实施例,在此不再赘述。The present application further provides an integrated circuit chip, which includes the above-mentioned electrostatic protection circuit. The structure, working principle and beneficial effects of the electrostatic protection circuit are all referred to the above embodiments, and are not described herein again.
此外,本申请还提供一种家用电器,该家用电器可为空调器或冰箱,具体地,家用电器包括如上所述的集成电路芯片,故均参照上述静电防护电路的实施例,在此不再赘述。In addition, the present application further provides a household appliance, which may be an air conditioner or a refrigerator. Specifically, the home appliance includes an integrated circuit chip as described above, and therefore, reference is made to the embodiment of the above-described static electricity protection circuit, and no longer Narration.
以上所述仅为本申请的优选实施例,并非因此限制本申请的专利范围,凡是在本申请的发明构思下,利用本申请说明书及附图内容所作的等效结构变换,或直接/间接运用在其他相关的技术领域均包括在本申请的专利保护范围内。The above description is only a preferred embodiment of the present application, and is not intended to limit the scope of the patents of the present application, and the equivalent structural transformation, or direct/indirect use, of the present application and the contents of the drawings is used in the present invention. All other related technical fields are included in the patent protection scope of the present application.
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| CN201711400217.1 | 2017-12-20 | ||
| CN201711400217.1A CN107968089A (en) | 2017-12-20 | 2017-12-20 | Electrostatic discharge protection circuit, IC chip and household electrical appliance |
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| WO2019119980A1 true WO2019119980A1 (en) | 2019-06-27 |
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| CN107968089A (en) * | 2017-12-20 | 2018-04-27 | 广东美的制冷设备有限公司 | Electrostatic discharge protection circuit, IC chip and household electrical appliance |
| CN110212508B (en) * | 2019-05-15 | 2021-09-10 | 明基智能科技(上海)有限公司 | Overcurrent protection system |
| CN110690693A (en) * | 2019-11-25 | 2020-01-14 | 广东美的制冷设备有限公司 | High-voltage integrated chip, intelligent power module and air conditioner |
| CN110690692A (en) * | 2019-11-25 | 2020-01-14 | 广东美的制冷设备有限公司 | High-voltage integrated chip, intelligent power module and air conditioner |
| CN111987949B (en) * | 2020-07-30 | 2022-05-24 | 岭东核电有限公司 | Excitation system, excitation regulator and reactive power measuring device of diesel generating set |
| CN113990863A (en) * | 2021-10-27 | 2022-01-28 | 中国科学院微电子研究所 | Electrostatic protection method for integrated circuit |
| CN113990861A (en) * | 2021-10-27 | 2022-01-28 | 中国科学院微电子研究所 | Method for inhibiting electrostatic damage of integrated circuit |
| CN113990860A (en) * | 2021-10-27 | 2022-01-28 | 中国科学院微电子研究所 | Low-cost electrostatic protection method |
| CN113990862A (en) * | 2021-10-27 | 2022-01-28 | 中国科学院微电子研究所 | Novel electrostatic protection method |
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