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WO2019119869A1 - Cellule solaire à hétérojonction et son procédé de préparation - Google Patents

Cellule solaire à hétérojonction et son procédé de préparation Download PDF

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WO2019119869A1
WO2019119869A1 PCT/CN2018/103604 CN2018103604W WO2019119869A1 WO 2019119869 A1 WO2019119869 A1 WO 2019119869A1 CN 2018103604 W CN2018103604 W CN 2018103604W WO 2019119869 A1 WO2019119869 A1 WO 2019119869A1
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layer
doped
water
ito
transparent conductive
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董刚强
陆海川
郁操
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Beijing Juntai Innovation Technology Co Ltd
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Beijing Juntai Innovation Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to, but is not limited to, the field of heterojunction solar cells, and in particular, but not limited to, a solar heterojunction cell and a method of fabricating the same.
  • ITO film plays an important role. It is not only responsible for collecting photogenerated carriers, but also for the majority. The sunlight can enter the battery body smoothly.
  • the excellent ITO film has high light transmittance and good electrical conductivity; in addition, in the HJT device, the ITO film is a part of the battery. In terms of device optics, the ITO film is the trapping and anti-reflection layer of the battery; in terms of device electrical properties, the properties of the ITO film material can affect the matching of the entire battery in the energy band and cause changes in the open circuit voltage and fill factor of the battery. .
  • the methods for preparing ITO materials are divided into low temperature (room temperature) and high temperature (>180 ° C) processes.
  • the low temperature (room temperature) process can be divided into the conventional process (in the process, only argon and oxygen are introduced) and the hydrogen doping process (ie, argon gas and oxygen are introduced during the deposition of ITO at room temperature). And hydrogen to participate in the reaction).
  • An embodiment of the present application provides a solar heterojunction cell comprising a single crystal silicon wafer and an intrinsic amorphous silicon passivation layer, amorphous silicon doping, which are sequentially stacked on at least one side of the single crystal silicon wafer.
  • ITO indium tin oxide
  • the water-doped ITO transparent conductive layer may have a thickness in the range of 30 nm to 50 nm.
  • the solar heterojunction cell when the solar heterojunction cell includes a water-doped ITO transparent conductive layer, the solar heterojunction cell may further include a doped layer disposed on the amorphous silicon layer and the doped water A non-aqueous ITO layer between the ITO transparent conductive layers.
  • the solar heterojunction cell when the solar heterojunction cell comprises two water-doped ITO transparent conductive layers respectively disposed on both sides of the single crystal silicon wafer, the solar heterojunction cell may further include a monocrystalline silicon disposed A non-water-doped ITO layer between at least one side of the sheet between the amorphous silicon layer doped layer and the water-doped ITO transparent conductive layer.
  • the non-water-doped ITO layer disposed between the amorphous silicon doped layer and the water-doped ITO transparent conductive layer may be a microcrystalline ITO layer.
  • the thickness of the non-water-doped ITO layer disposed between the amorphous silicon doped layer and the water-doped ITO transparent conductive layer may range from 2 nm to 3 nm.
  • the solar heterojunction cell when the solar heterojunction cell comprises a water-doped ITO transparent conductive layer, the solar heterojunction cell may further comprise a photo-setting ITO transparent conductive layer disposed between the electrode and the electrode The water-free ITO layer.
  • the solar heterojunction cell when the solar heterojunction cell comprises two water-doped ITO transparent conductive layers respectively disposed on both sides of the single crystal silicon wafer, the solar heterojunction cell may further include a monocrystalline silicon disposed An undoped ITO layer between at least one side of the sheet between the water-doped ITO transparent conductive layer and the electrode.
  • the non-water-doped ITO layer disposed between the water-doped ITO transparent conductive layer and the electrode can be a polycrystalline ITO layer.
  • the thickness of the non-water-doped ITO layer disposed between the water-doped ITO transparent conductive layer and the electrode may range from 30 nm to 50 nm.
  • the single crystal silicon wafer can be an n-type single crystal silicon wafer.
  • the thickness of the single crystal silicon wafer may range from 50 ⁇ m to 300 ⁇ m.
  • the intrinsic amorphous silicon passivation layer may have a thickness in the range of 1 nm to 20 nm.
  • the amorphous silicon doped layer may have a thickness in the range of 3 nm to 20 nm.
  • the solar heterojunction cell comprises two amorphous silicon doped layers respectively disposed on both sides of a single crystal silicon wafer
  • the one disposed on one side of the single crystal silicon wafer The amorphous silicon doped layer may be a P-type amorphous silicon doped layer
  • the amorphous silicon doped layer disposed on the other side of the single crystal silicon wafer may be an N-type amorphous silicon doped layer.
  • the embodiment of the present application further provides a method for preparing a solar heterojunction cell, comprising: forming an intrinsic amorphous silicon passivation layer, an amorphous silicon doped layer, and water in sequence on at least one side of a single crystal silicon wafer; Indium tin oxide (ITO) transparent conductive layer and electrode.
  • ITO Indium tin oxide
  • the method may further comprise depositing the water-doped ITO transparent conductive layer on the amorphous silicon doped layer Previously, a water-impermeable ITO layer is deposited on the amorphous silicon doped layer, and the water-doped ITO transparent conductive layer is deposited on the water-impermeable ITO layer disposed on the amorphous silicon doped layer. .
  • the method may further include the water-doped ITO transparent conductive layer Depositing a water-impermeable ITO layer on the amorphous silicon doped layer on at least one side of the single crystal silicon wafer, and depositing the water-doped ITO transparent conductive layer on the at least one side of the amorphous silicon doped layer Deposited on the water impermeable ITO layer disposed on the amorphous silicon doped layer.
  • the method may further comprise: impervious ITO before the electrode is formed on the water-doped ITO transparent conductive layer A layer is deposited on the water-doped ITO transparent conductive layer, and the electrode is screen printed on the water-impermeable ITO layer disposed on the water-doped ITO transparent conductive layer.
  • the method may further include forming the electrode at the doping Before the water ITO transparent conductive layer, a water-impermeable ITO layer is deposited on the water-doped ITO transparent conductive layer on at least one side of the single crystal silicon wafer, and disposed on the water-doped ITO transparent conductive layer The electrode is screen printed on the water impermeable ITO layer.
  • the step of forming the water-doped ITO transparent conductive layer may include depositing the water-doped ITO transparent conductive layer by introducing argon gas, oxygen gas, and water vapor under room temperature conditions.
  • the water-doped ITO transparent conductive layer may be deposited by magnetron sputtering, and wherein the gas flow ratio of the argon gas, the oxygen gas to the water vapor may be (200:10: 1) To the range of (400:10:1), the pressure at the time of deposition may be in the range of 0.1 Pa to 1 Pa, and the power density of the sputtering power source may be in the range of 0.5 W/cm 2 to 3 W/cm 2 .
  • the water-doped ITO transparent conductive layer may have a thickness in the range of 30 nm to 50 nm.
  • the flow rate of water vapor can be kept constant, and the flow rate of the water vapor can be set in the range of 0.1 sccm to 10 sccm.
  • the depositing the non-aqueous ITO layer disposed on the amorphous silicon doped layer may include depositing water-free ITO on the amorphous silicon doped layer at room temperature.
  • the layers are formed to form a microcrystalline, non-aqueous ITO layer.
  • a non-water-doped ITO layer can be deposited on the amorphous silicon doped layer by magnetron sputtering using argon and oxygen at room temperature, wherein the argon gas is
  • the oxygen gas flow ratio may be in the range of 20:1 to 60:1
  • the deposition pressure may be in the range of 0.1 Pa to 2 Pa
  • the sputtering power source may have a power density of 0.5 W/cm 2 to 3 W/cm 2 . In the range.
  • the thickness of the micro-crystalline non-water-doped ITO layer deposited on the amorphous silicon doped layer may range from 2 nm to 3 nm.
  • the step of depositing a non-water-doped ITO layer on the water-doped ITO transparent conductive layer may include depositing a water-free ITO layer on the water-doped ITO transparent conductive layer to form under high temperature conditions. Polycrystalline non-aqueous ITO layer.
  • the sample to be deposited may be heated to a range of 180 ° C to 200 ° C, argon and oxygen are introduced, and the undoped deposition on the water-doped ITO transparent conductive layer is performed by magnetron sputtering.
  • a water ITO layer to form a polycrystalline non-water-doped ITO layer wherein the gas flow ratio of the argon gas to the oxygen gas may be in the range of 20:1 to 60:1, and the deposition pressure may be 0.1 Pa to
  • the power density of the sputtering power source may range from 0.5 W/cm 2 to 3 W/cm 2 in the range of 2 Pa.
  • the thickness of the polycrystalline non-water-doped ITO layer deposited on the water-doped ITO transparent conductive layer can range from 30 nm to 50 nm.
  • the step of sequentially forming the intrinsic amorphous silicon passivation layer and the amorphous silicon doped layer on at least one side of the single crystal silicon wafer may include depositing the intrinsic amorphous by chemical vapor deposition. a silicon passivation layer and the amorphous silicon doped layer.
  • the solar heterojunction cell comprises two amorphous silicon doped layers respectively disposed on both sides of a single crystal silicon wafer
  • the one disposed on one side of the single crystal silicon wafer The amorphous silicon doped layer may be a P-type amorphous silicon doped layer
  • the amorphous silicon doped layer disposed on the other side of the single crystal silicon wafer may be an N-type amorphous silicon doped layer.
  • the single crystal silicon wafer can include an n-type single crystal silicon wafer.
  • the thickness of the single crystal silicon wafer may range from 50 ⁇ m to 300 ⁇ m.
  • the intrinsic amorphous silicon passivation layer may have a thickness in the range of 1 nm to 20 nm.
  • the amorphous silicon doped layer may have a thickness in the range of 3 nm to 20 nm.
  • FIG. 1 is a schematic structural view of a solar heterojunction battery according to an embodiment of the present application.
  • Figure 2 shows the transmission curves of different ITO samples, in which "microcrystalline” represents ITO prepared by a low temperature conventional process, “amorphous” represents ITO prepared by a low temperature hydrogen doping process, and “polycrystalline” represents ITO prepared by a high temperature process.
  • "Inventive Example” represents a laminated ITO according to an embodiment of the present application.
  • FIG. 3 is an enlarged partial detail view of the short wave band of FIG. 2.
  • FIG. 4 is an enlarged partial detail view of the long wave band of FIG. 2.
  • Figure 5 is a surface reflectance curve of a silicon wafer deposited with different ITOs, wherein "microcrystalline” represents ITO prepared by a low temperature conventional process, “amorphous” represents ITO prepared by a low temperature hydrogen doping process, and “polycrystalline” represents a high temperature.
  • the ITO prepared by the process, "the embodiment of the present application” represents the laminated ITO in the HJT solar cell of an embodiment of the present application.
  • FIG. 6 is an enlarged partial detail view of the short wave band of FIG. 5.
  • FIG. 7 is an enlarged partial detail view of the medium long wave band of FIG. 5.
  • the ITO transparent conductive layer prepared by the water mixing process is defined as a water-doped ITO transparent conductive layer
  • the conventional ITO transparent conductive layer prepared by the non-water mixing process is defined as a water-free ITO transparent conductive layer.
  • the conventional process at room temperature that is, only argon gas and oxygen are introduced during the deposition of ITO at room temperature, and the prepared ITO is a microcrystalline material.
  • the carrier concentration of the microcrystalline ITO material is high, correspondingly The light transmittance of the microcrystalline ITO material is slightly worse.
  • the hydrogen-doping process at room temperature that is, the reaction of argon gas, oxygen gas and hydrogen gas during the deposition of ITO at room temperature can change the degree of crystallization of the ITO material, so that the ITO is prepared by the conventional process, that is, the process of not passing hydrogen gas.
  • the crystalline state changes to an amorphous state.
  • the light transmission properties of this amorphous ITO material are almost the same as those of the polycrystalline ITO material prepared by the high temperature process.
  • the refractive index (n) of the amorphous ITO material prepared by the hydrogen-doping process is relatively large. When used as a transparent conductive layer of a solar cell, the effect of trapping light is slightly worse.
  • the ITO material prepared at a high temperature is polycrystalline ITO.
  • the process controllability of the high-temperature process, the conductivity and transmittance of the prepared ITO material can meet the requirements of the solar cell.
  • This method of preparing ITO materials is currently used by most companies and research institutes. However, this material is not perfect, there is also a lot of optimization space in the process and battery structure design.
  • the core of the solar cell structure is a 4-layer amorphous silicon material: two intrinsic amorphous silicon passivation layers respectively disposed on both sides of the single crystal silicon wafer, and respectively disposed on the two intrinsic amorphous silicon passivation layers.
  • the thickness of the four amorphous silicon layers does not exceed 20 nm, and the properties are relatively unstable. If the battery after the preparation of the four layers of amorphous silicon has been placed in a high temperature environment, the properties of the amorphous silicon are extremely easy to change.
  • a sample of the ITO deposition process is formed by forming a sample of the ITO to be deposited by a conventional method using four layers of the amorphous silicon layer and the single crystal silicon wafer.
  • the deposited ITO can be selected from a low temperature conventional process, a hydrogen doping process, or a high temperature deposition process. From the effect point of view, the battery current of ITO prepared by low temperature conventional process is low, the filling factor of ITO prepared by hydrogen doping process is low, and the opening pressure of ITO battery prepared by high temperature process is not high.
  • a large amount of oxygen is introduced into the cavity, and four amorphous silicon layers are easily oxidized during high-temperature ITO deposition; in addition, there are many high-energy plasmas in the process chamber for depositing ITO. Amorphous silicon films are more susceptible to oxidation and destruction.
  • the inventors of the present application found that in the process of preparing amorphous ITO, a certain amount of water vapor is introduced to participate in the reaction, and the performance of the prepared water-doped ITO transparent conductive layer is improved compared with the performance of the conventional ITO layer.
  • a water-doped ITO film having a high mobility and a low carrier concentration was obtained.
  • the water-doped ITO transparent conductive layer has good light transmission performance, and the short-circuit current of the HJT solar cell prepared by using the water-doped ITO transparent conductive layer is good, so the water-doped ITO transparent conductive layer can be used as a heterojunction solar cell. Transparent conductive layer.
  • the inventors of the present application have creatively proposed a combined design after extensive experimental and theoretical research: after completing four layers of amorphous silicon deposition, on two amorphous silicon doped layers, successive deposition can be used at room temperature.
  • the HJT solar cell prepared by using a specific arrangement of three specific ITOs improves the efficiency of the battery compared with the HJT solar cell prepared by a majority of current research and development organizations using a single type of conventional ITO.
  • the specific combination of such ITO is deposited on the amorphous silicon doped layer by using a microcrystalline non-doped ITO layer, so that the microcrystalline non-doped ITO has a good work function matching with the doped amorphous silicon.
  • the microcrystalline ITO layer is in good contact with the doped amorphous silicon layer.
  • Such a specific combination of ITO uses a polycrystalline non-water-doped ITO layer to screen the electrode onto the polycrystalline non-water-doped ITO layer, so that the polycrystalline non-doped ITO and the electrode have a good work function. Matching, the electrode can be in good contact with the polycrystalline non-water-doped ITO layer.
  • Such specific combinations of ITOs have good light transmission properties, open circuit voltages, and fill factors.
  • the embodiment of the present application provides a solar heterojunction cell prepared by using a water-doped ITO transparent conductive layer and a preparation method thereof, thereby effectively solving the problem that the conventional ITO conductive layer has low light transmittance, poor light trapping effect, and The amorphous silicon film is oxidized during high temperature deposition of ITO.
  • the embodiment of the present application provides a solar heterojunction cell, comprising a single crystal silicon wafer and an intrinsic amorphous silicon passivation layer and amorphous silicon doping layer which are sequentially stacked on at least one side of the single crystal silicon wafer.
  • ITO indium tin oxide
  • water-doped ITO is used as the transparent conductive layer of the HJT solar cell, and a water-doped ITO film having high mobility and low carrier concentration can be obtained.
  • the water-doped ITO transparent conductive layer has good light transmission performance, and the short-circuit current of the HJT solar cell prepared using the water-doped ITO transparent conductive layer is good.
  • the water-doped ITO transparent conductive layer may have a thickness in the range of 30 nm to 50 nm.
  • the solar heterojunction cell when the solar heterojunction cell includes a water-doped ITO transparent conductive layer, the solar heterojunction cell may further include a doped layer disposed on the amorphous silicon layer and the A water-free ITO layer between the water-doped ITO transparent conductive layers.
  • the solar heterojunction battery may further include a single a non-water-doped ITO layer between the amorphous silicon layer doped layer and the water-doped ITO transparent conductive layer on at least one side of the crystalline silicon wafer.
  • the non-water-doped ITO layer disposed between the amorphous silicon doped layer and the water-doped ITO transparent conductive layer may be a microcrystalline ITO layer.
  • the thickness of the non-water-doped ITO layer disposed between the amorphous silicon doped layer and the water-doped ITO transparent conductive layer may range from 2 nm to 3 nm.
  • the solar heterojunction cell when the solar heterojunction cell includes a water-doped ITO transparent conductive layer, the solar heterojunction cell may further include the water-doped ITO transparent conductive layer and the electrode. There is no water ITO layer between them.
  • the solar heterojunction battery may further include a single a non-water-doped ITO layer between the water-doped ITO transparent conductive layer and the electrode on at least one side of the crystalline silicon wafer.
  • the non-water-doped ITO layer disposed between the water-doped ITO transparent conductive layer and the electrode may be a polycrystalline ITO layer.
  • the thickness of the non-water-doped ITO layer disposed between the water-doped ITO transparent conductive layer and the electrode may range from 30 nm to 50 nm.
  • the solar cell provided by the exemplary embodiment of the present application organically combines three types of ITO layers.
  • the entire ITO material is formed using a specific combination of three specific ITO combinations.
  • Both polycrystalline ITO and amorphous ITO materials are ITO materials with good light transmittance to ensure light transmittance.
  • the refractive indices of the polycrystalline ITO, the amorphous ITO, and the microcrystalline ITO layer are different, in the optical trapping and anti-reverse design, by combining the three layers of ITO materials, when the light is incident, it is sequentially passed.
  • the three-layer ITO material with a small change in refractive index enhances the light trapping effect of the solar cell, so that the solar cell has a significantly improved efficiency gain.
  • the entire ITO conductive layer is more conducive to the transport of current.
  • the microcrystalline ITO layer has a high carrier concentration, so the microcrystalline ITO layer can achieve good contact with the amorphous silicon doped layer.
  • the single crystal silicon wafer may be an n-type single crystal silicon wafer.
  • the thickness of the single crystal silicon wafer may range from 50 ⁇ m to 300 ⁇ m.
  • the intrinsic amorphous silicon passivation layer may have a thickness in the range of 1 nm to 20 nm.
  • the amorphous silicon doped layer may have a thickness in the range of 3 nm to 20 nm.
  • the solar heterojunction cell when the solar heterojunction cell includes two amorphous silicon doped layers respectively disposed on both sides of the single crystal silicon wafer, disposed on one side of the single crystal silicon wafer
  • the amorphous silicon doped layer may be a P-type amorphous silicon doped layer
  • the amorphous silicon doped layer disposed on the other side of the single crystal silicon wafer may be N-type amorphous silicon doped Floor.
  • the embodiment of the present application further provides a method for preparing a solar heterojunction cell, comprising: forming an intrinsic amorphous silicon passivation layer, an amorphous silicon doped layer, and water in sequence on at least one side of the single crystal silicon wafer; Indium tin oxide (ITO) transparent conductive layer and electrode.
  • ITO Indium tin oxide
  • the solar heterojunction cell prepared by the above method has good light transmission performance, and the short circuit current of the solar cell is good.
  • the method may further include depositing the amorphous silicon doping on the water-doped ITO transparent conductive layer. Before the layer, a water-impermeable ITO layer is deposited on the amorphous silicon doped layer, and the water-doped ITO transparent conductive layer is deposited on the non-permeable ITO disposed on the amorphous silicon doped layer. On the floor.
  • the method may further include transparently coating the water-doped ITO Depositing a conductive layer on the amorphous silicon doped layer, depositing a water-impermeable ITO layer on the amorphous silicon doped layer on at least one side of the single crystal silicon wafer, and transparently coating the water-doped ITO A conductive layer is deposited on the water impermeable ITO layer disposed on the amorphous silicon doped layer.
  • the method may further include: before the electrode is formed on the water-doped ITO transparent conductive layer, A water permeable ITO layer is deposited on the water-doped ITO transparent conductive layer, and the electrode is screen printed on the water-impermeable ITO layer disposed on the water-doped ITO transparent conductive layer.
  • the method may further include forming the electrode at the Before the water-doped ITO transparent conductive layer, a water-impermeable ITO layer is deposited on the water-doped ITO transparent conductive layer on at least one side of the single crystal silicon wafer, and is disposed on the water-doped ITO transparent conductive layer The electrode is screen printed on the water impermeable ITO layer.
  • the solar heterojunction cell prepared by the above method can avoid the problem that the amorphous silicon film is oxidized during high temperature deposition of ITO.
  • the microcrystalline ITO layer and the amorphous water-doped ITO layer are deposited at a low temperature. Since the sample to be deposited is not heated, the reaction rate of the amorphous silicon material with the oxygen in the process gas is relatively slow, reducing the amorphous Oxidation of the silicon layer. Therefore, the two layers of ITO material of the microcrystalline ITO layer and the amorphous water-doped ITO layer can be used as a protective layer, which can effectively avoid the problem that the amorphous silicon layer is oxidized during high temperature deposition of ITO.
  • the step of forming the water-doped ITO transparent conductive layer may include depositing the water-doped ITO transparent conductive layer by introducing argon gas, oxygen gas, and water vapor under room temperature conditions.
  • the water-doped ITO transparent conductive layer may be deposited by magnetron sputtering, and wherein the gas flow ratio of the argon gas, the oxygen gas to the water vapor may be (200: In the range of 10:1) to (400:10:1), the pressure during deposition may be in the range of 0.1 Pa to 1 Pa, and the power density of the sputtering power source may be in the range of 0.5 W/cm 2 to 3 W/cm 2 .
  • the gas flow ratio of the argon gas, the oxygen gas to the water vapor may be (200: In the range of 10:1) to (400:10:1)
  • the pressure during deposition may be in the range of 0.1 Pa to 1 Pa
  • the power density of the sputtering power source may be in the range of 0.5 W/cm 2 to 3 W/cm 2 .
  • the water-doped ITO transparent conductive layer may have a thickness in the range of 30 nm to 50 nm.
  • the flow rate of water vapor in the process of depositing the water-doped ITO transparent conductive layer, the flow rate of water vapor may be kept constant, and the flow rate of the water vapor may be set in a range of 0.1 sccm to 10 sccm.
  • the depositing the non-water-doped ITO layer disposed on the amorphous silicon doped layer may include depositing an undoped layer on the amorphous silicon doped layer at room temperature.
  • the water ITO layer is formed to form a microcrystalline state without a water-doped ITO layer.
  • a non-aqueous ITO layer may be deposited on the amorphous silicon doped layer by magnetron sputtering under argon and oxygen at room temperature, wherein the argon gas is
  • the oxygen gas flow ratio may be in the range of 20:1 to 60:1
  • the deposition pressure may be in the range of 0.1 Pa to 2 Pa
  • the sputtering power source may have a power density of 0.5 W/cm 2 to 3 W/ Within the range of cm 2 .
  • the thickness of the micro-crystalline non-water-doped ITO layer deposited on the amorphous silicon doped layer may range from 2 nm to 3 nm.
  • the step of depositing a non-water-doped ITO layer on the water-doped ITO transparent conductive layer may include depositing a water-free ITO layer on the water-doped ITO transparent conductive layer under high temperature conditions. To form a polycrystalline, non-water-doped ITO layer.
  • the sample to be deposited may be heated to a range of 180 ° C to 200 ° C, argon and oxygen are introduced, and deposited on the water-doped ITO transparent conductive layer by magnetron sputtering.
  • the ITO layer is not doped to form a polycrystalline non-water-doped ITO layer, wherein the gas flow ratio of the argon gas to the oxygen gas may be in the range of 20:1 to 60:1, and the deposition pressure may be 0.1.
  • the power density of the sputtering power source may range from 0.5 W/cm 2 to 3 W/cm 2 in the range of Pa to 2 Pa.
  • the thickness of the polycrystalline non-water-doped ITO layer deposited on the water-doped ITO transparent conductive layer may range from 30 nm to 50 nm.
  • the step of sequentially forming an intrinsic amorphous silicon passivation layer and an amorphous silicon doped layer on at least one side of the single crystal silicon wafer may include depositing the intrinsic by chemical vapor deposition An amorphous silicon passivation layer and the amorphous silicon doped layer.
  • the solar heterojunction cell when the solar heterojunction cell includes two amorphous silicon doped layers respectively disposed on both sides of the single crystal silicon wafer, disposed on one side of the single crystal silicon wafer
  • the amorphous silicon doped layer may be a P-type amorphous silicon doped layer
  • the amorphous silicon doped layer disposed on the other side of the single crystal silicon wafer may be N-type amorphous silicon doped Floor.
  • the single crystal silicon wafer may include an n-type single crystal silicon wafer.
  • the thickness of the single crystal silicon wafer may range from 50 ⁇ m to 300 ⁇ m.
  • the intrinsic amorphous silicon passivation layer may have a thickness in the range of 1 nm to 20 nm.
  • the amorphous silicon doped layer may have a thickness in the range of 3 nm to 20 nm.
  • the HJT heterojunction cell comprises, in order from top to bottom, a first electrode 9, a second non-doped ITO layer 8, a first water-doped ITO transparent conductive layer 7, a first non-doped ITO layer 6, and a phosphorus-doped a.
  • the thickness of the n-type single crystal silicon wafer 1 is 180 ⁇ m;
  • the first intrinsic amorphous silicon passivation layer 2 has a thickness of 5 nm;
  • the second intrinsic amorphous silicon passivation layer 4 has a thickness of 5 nm;
  • the thickness of the phosphorus-doped a-Si:H(n) layer 3 is 7 nm;
  • the boron-doped a-Si:H(p) layer 5 has a thickness of 7 nm;
  • the first non-doped ITO layer 6 and the third non-doped ITO layer 6' are both microcrystalline ITO layers, each having a thickness of 2 nm;
  • the second non-water-doped ITO layer 8 and the fourth non-water-doped ITO layer 8' are both polycrystalline ITO layers, each having a thickness of 30 nm;
  • the first water-doped ITO transparent conductive layer 7 and the second water-doped ITO transparent conductive layer 7' each have a thickness of 50 nm.
  • the combination of the first non-water-doped ITO layer 6, the first water-doped ITO transparent conductive layer 7 and the second non-water-doped ITO layer 8 is referred to as a first laminated ITO, a third non-water-doped ITO layer 6', and a second
  • the combination of the water-doped ITO transparent conductive layer 7' and the fourth non-water-doped ITO layer 8' is referred to as a second laminated ITO.
  • a second intrinsic amorphous silicon passivation layer 4 and a boron-doped a-Si:H(p) layer 5 are sequentially deposited on the second surface of the n-type single crystal silicon wafer 1.
  • the first intrinsic amorphous silicon passivation layer 2 or the second intrinsic amorphous silicon passivation layer 4 is deposited under the following conditions: a power supply power of 350 W; a hydrogen gas to silane gas flow ratio, that is, a hydrogen dilution ratio of 12:1; The pressure was 0.7 Pa; the substrate temperature during deposition was 240 °C.
  • the deposition condition of phosphorus-doped a-Si:H(n) layer 3 is: power supply power is 400W; hydrogen gas to silane gas flow ratio, that is, hydrogen dilution ratio is 4:1; gas flow ratio of phosphane to silane, ie
  • the ratio of phosphorus to silicon was 1:100; the pressure was 0.4 Pa; and the temperature of the substrate during deposition was 230 °C.
  • the deposition condition of the boron-doped a-Si:H(p) layer 5 is: the power supply power is 500 W; the gas flow ratio of hydrogen to silane, that is, the hydrogen dilution ratio is 5:1; the gas flow ratio of borane to silane, That is, the ratio of boro to silicon is 2:98; the pressure is 0.3 Pa; and the temperature of the substrate during deposition is 200 °C.
  • argon gas and oxygen gas are introduced at room temperature, the gas flow ratio of argon gas to oxygen gas is set to 50:1, the cavity pressure is maintained at 0.3 Pa, the sputtering power source is turned on, and the power density of the power source is 2 W/cm 2 .
  • the first non-water-doped ITO layer 6 is deposited on the phosphorus-doped a-Si:H(n) layer 3 by magnetron sputtering.
  • step b) depositing said third non-water-doped ITO layer 6' on said boron-doped a-Si:H(p) layer 5 by the same process as step b).
  • argon, oxygen and water vapor are simultaneously introduced.
  • the gas flow ratio of argon, oxygen and water vapor is set to 250:10:1, the pressure of the chamber is kept at 0.4 Pa, and the water vapor is maintained.
  • the flow rate is stabilized at 0.5 sccm, the sputtering power source is turned on, the power density of the power source is 2.1 W/cm 2 , and the first water-doped ITO is transparently deposited on the first non-water-doped ITO layer 6 by magnetron sputtering.
  • step d depositing a second water-doped ITO transparent conductive layer 7' on the third non-water-doped ITO layer 6' by the same process as step d).
  • step f) heating the sample obtained in step e) to 185 ° C, introducing argon gas and oxygen gas, setting the gas flow ratio of argon gas to oxygen to 60:1, maintaining the cavity pressure at 0.5 Pa, and turning on the sputtering power source.
  • the power source has a power density of 2 W/cm 2 , and a second non-water-doped ITO layer 8 is deposited on the first water-doped ITO transparent conductive layer 7 by magnetron sputtering.
  • step f depositing a fourth non-water-doped ITO layer 8' on the second water-doped ITO transparent conductive layer 7' by the same process as step f).
  • the first electrode 9 and the second electrode 9' are screen printed on the second non-water-doped ITO layer 8 and the fourth non-water-doped ITO layer 8', respectively.
  • the above preparation process is illustrated by steps a) to h), it is not limited to the preparation of the solar heterojunction cell of the present exemplary embodiment in the order of a) to h).
  • the solar heterojunction cell of the present embodiment can be prepared in the order of a), b), d), f), c), e), g), h), that is, in the n-type single crystal silicon wafer.
  • a first intrinsic amorphous silicon passivation layer 2 a phosphorus-doped a-Si:H(n) layer 3, a first non-doped ITO layer 6, and a first water-doped ITO are sequentially deposited on the first surface of 1.
  • the conductive layer 7 and the second non-water-doped ITO layer 8 are sequentially deposited on the second surface of the n-type single crystal silicon wafer 1 with a second intrinsic amorphous silicon passivation layer 4, boron-doped a-Si:H (p) Layer 5, a third non-water-doped ITO layer 6', a second water-doped ITO transparent conductive layer 7', and a fourth non-water-doped ITO layer 8'.
  • a second intrinsic amorphous silicon passivation layer 4 a boron-doped a-Si:H(p) layer 5, and a third undoped layer may be sequentially deposited on the second surface of the n-type single crystal silicon wafer 1.
  • a water ITO layer 6', a second water-doped ITO transparent conductive layer 7', and a fourth non-water-doped ITO layer 8' depositing a first intrinsic amorphous layer on the first surface of the n-type single crystal silicon wafer 1
  • a silicon passivation layer 2 a phosphorus-doped a-Si:H(n) layer 3, a first non-doped ITO layer 6, a first water-doped ITO transparent conductive layer 7, and a second non-water-doped ITO layer 8.
  • step a diboron or trimethoxy-boroxene (TMB) may be used instead of borane in the exemplary preparation process to complete boron-doped a-Si:H (p) Deposition of the layer.
  • TMB trimethoxy-boroxene
  • the transmittance of the laminated ITO in the HJT solar cell of the above embodiment of the present application is higher than the transmittance of the microcrystalline ITO material prepared by the low temperature conventional process, and is close to the conventional low temperature hydrogen doping process.
  • the transmittance of the prepared amorphous ITO material and the polycrystalline ITO material prepared by a high temperature conventional process is higher than the transmittance of the microcrystalline ITO material prepared by the low temperature conventional process, and is close to the conventional low temperature hydrogen doping process.
  • the laminated ITO material was deposited on the surface of the silicon wafer for testing using the same processes and parameters as in the steps b), d) and f) of the method for preparing the HJT solar cell in the above embodiment, that is, on the surface of the silicon wafer.
  • the microcrystalline ITO, the water-doped ITO, and the polycrystalline ITO were deposited, and the reflectance of the surface of the silicon wafer on which the laminated ITO material was deposited was tested to obtain test data, that is, the laminated ITO of the embodiment of the present application referred to in FIGS. 5-7.
  • the test results are shown in Figure 5-7.
  • the trapping effect of the laminated ITO of the embodiment of the present application is substantially better than that of the microcrystalline ITO prepared by the low temperature conventional process, the amorphous ITO prepared by the low temperature conventional hydrogen doping process, and the high temperature conventionally.
  • the trapping effect of the polycrystalline ITO prepared by the process is substantially better than that of the microcrystalline ITO prepared by the low temperature conventional process, the amorphous ITO prepared by the low temperature conventional hydrogen doping process, and the high temperature conventionally.
  • the efficiency of the HJT solar cell of the above embodiment of the present application is significantly better than that of the microcrystalline ITO prepared by the low temperature conventional process, the amorphous ITO prepared by the low temperature conventional hydrogen doping process, and the high temperature conventional process.
  • the efficiency of the battery prepared by crystalline ITO increases the efficiency by at least 3 percentage points.
  • the structure of the HJT heterojunction cell may also adopt a structure as shown in FIG.
  • the thickness of each layer in the HJT heterojunction cell of the present exemplary embodiment is different from the thickness of each layer of the HJT heterojunction cell of the previous exemplary embodiment.
  • the HJT heterojunction cell of the exemplary embodiment includes a first electrode 9, a second non-water-doped ITO layer 8, a first water-doped ITO transparent conductive layer 7, and a first non-water-doped ITO layer 6, in order from top to bottom.
  • Phosphorus doped a-Si:H(n) layer 3 first intrinsic amorphous silicon passivation layer 2, n-type single crystal silicon wafer 1, second intrinsic amorphous silicon passivation layer 4, boron doping a-Si:H(p) layer 5, a third non-doped ITO layer 6', a second water-doped ITO transparent conductive layer 7', a fourth non-doped ITO layer 8' and a second electrode 9', wherein ,
  • the thickness of the n-type single crystal silicon wafer 1 is 180 ⁇ m;
  • the first intrinsic amorphous silicon passivation layer 2 has a thickness of 10 nm;
  • the second intrinsic amorphous silicon passivation layer 4 has a thickness of 10 nm
  • the thickness of the phosphorus-doped a-Si:H(n) layer 3 is 20 nm;
  • the boron-doped a-Si:H(p) layer 5 has a thickness of 20 nm;
  • the first non-water-doped ITO layer 6 and the third non-water-doped ITO layer 6' are both microcrystalline ITO layers, each having a thickness of 3 nm;
  • the second non-water-doped ITO layer 8 and the fourth non-water-doped ITO layer 8' are polycrystalline ITO layers each having a thickness of 40 nm;
  • the thickness of the first water-doped ITO transparent conductive layer 7 and the second water-doped ITO transparent conductive layer 7' are both 40 nm.
  • the combination of the first non-water-doped ITO layer 6, the first water-doped ITO transparent conductive layer 7 and the second non-water-doped ITO layer 8 is referred to as a first laminated ITO, a third non-water-doped ITO layer 6', and a second
  • the combination of the water-doped ITO transparent conductive layer 7' and the fourth non-water-doped ITO layer 8' is referred to as a second laminated ITO.
  • the HJT heterojunction cell of the present exemplary embodiment can be prepared by the following method:
  • a second intrinsic amorphous silicon passivation layer 4 and a boron-doped a-Si:H(p) layer 5 are sequentially deposited on the second surface of the n-type single crystal silicon wafer 1.
  • the deposition condition of the first intrinsic amorphous silicon passivation layer 2 or the second intrinsic amorphous silicon passivation layer 4 is: the power supply power is 380 W, the hydrogen gas to silane gas flow ratio, that is, the hydrogen dilution ratio is 14:1, and the pressure is 0.7pa, the substrate temperature during deposition is 220 °C.
  • the deposition condition of phosphorus-doped a-Si:H(n) layer 3 is: power supply power is 400W; hydrogen gas to silane gas flow ratio, ie hydrogen dilution ratio is 4:1; phosphine to silane gas flow ratio, ie phosphorus
  • the silicon ratio was 1:100; the pressure was 0.6 Pa; and the substrate temperature was 220 ° C during deposition.
  • the deposition condition of boron-doped a-Si:H(p) layer 5 is: power supply power is 450W; hydrogen gas to silane gas flow ratio, ie hydrogen dilution ratio is 5:1; borane to silane gas flow ratio, ie boron
  • the silicon ratio was 1:100; the pressure was 0.3 Pa; the substrate temperature during deposition was 200 °C.
  • argon gas and oxygen gas are introduced at room temperature, the gas flow ratio of argon gas to oxygen gas is set to 20:1, the cavity pressure is maintained at 0.4 Pa, the sputtering power source is turned on, and the power density of the power source is 1 W/cm 2 .
  • the first non-water-doped ITO layer 6 is deposited on the phosphorus-doped a-Si:H(n) layer 3 by magnetron sputtering.
  • step b) depositing said third non-water-doped ITO layer 6' on said boron-doped a-Si:H(p) layer 5 by the same process as step b).
  • argon, oxygen and water vapor are simultaneously introduced.
  • the gas flow ratio of argon, oxygen and water vapor is set to 300:10:1, and the chamber pressure is maintained at 0.6 Pa, maintaining water vapor.
  • the flow rate was stabilized by 1 sccm, the sputtering power source was turned on, and the power density of the power source was 1 W/cm 2 .
  • the first water-doped ITO transparent conductive layer 7 was deposited on the first non-doped ITO layer 6 by magnetron sputtering.
  • step d depositing a second water-doped ITO transparent conductive layer 7' on the third non-water-doped ITO layer 6' by the same process as step d).
  • step f) heating the sample obtained in step e) to 190 ° C, introducing argon gas and oxygen gas, setting the gas flow ratio of argon gas to oxygen to 30:1, maintaining the cavity pressure at 0.3 Pa, and turning on the sputtering power source.
  • the power source has a power density of 2 W/cm 2 , and a second non-water-doped ITO layer 8 is deposited on the first water-doped ITO transparent conductive layer 7 by magnetron sputtering.
  • step f depositing a fourth non-water-doped ITO layer 8' on the second water-doped ITO transparent conductive layer 7' by the same process as step f).
  • the first electrode 9 and the second electrode 9' are screen printed on the second non-water-doped ITO layer 8 and the fourth non-water-doped ITO layer 8', respectively.
  • the solar heterojunction cell organically combines three types of ITO layers.
  • the main structure of the entire laminated ITO transparent conductive material that is, two ITO layers having a relatively large thickness, polycrystalline ITO and amorphous ITO materials are all ITO materials with good light transmittance. This design ensures light transmission.
  • the refractive indices of the polycrystalline ITO, the amorphous ITO, and the microcrystalline ITO layer are different, in the optical trapping and anti-reverse design, by combining the three layers of ITO materials, when the light is incident, it is sequentially passed.
  • the three-layer ITO material with a small change in refractive index enhances the light trapping effect of the solar cell, so that the solar cell has a significantly improved efficiency gain.
  • the laminated ITO conductive layer is more conducive to the transport of current: the carrier concentration of the microcrystalline ITO layer represented by reference numerals 6 and 6' in FIG. 1 is high, and can be as shown in FIG.
  • the amorphous silicon doped layers denoted by reference numerals 3 and 5 achieve good contact.
  • a two-layer doped amorphous silicon layer that is, a phosphorus-doped a-Si:H layer and a boron-doped a-Si:H layer are respectively deposited with a microcrystalline ITO layer, which can improve the two doping
  • the contact between the amorphous silicon layer and the laminated ITO layer makes the battery conduct smoothly.
  • the method for preparing a solar heterojunction cell can avoid the problem that the amorphous silicon film is oxidized during high temperature deposition of ITO. Firstly, the microcrystalline ITO layer and the amorphous water-doped ITO layer are deposited at a low temperature. Since the sample to be deposited is not heated, the reaction rate of the amorphous silicon material with the oxygen in the process gas is relatively slow, reducing the amorphous Oxidation of the silicon layer.
  • the two layers of ITO material of the microcrystalline ITO layer and the amorphous water-doped ITO layer can be used as a protective layer, which can effectively avoid the problem that the amorphous silicon layer is oxidized during high temperature deposition of ITO.

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Abstract

L'invention concerne une cellule solaire à hétérojonction comprenant une tranche de silicium monocristallin, et une couche de passivation en silicium amorphe intrinsèque, une couche de dopage en silicium amorphe, une couche conductrice transparente d'oxyde d'indium-étain mélangée à de l'eau, et une électrode qui sont empilées séquentiellement sur au moins un côté de la tranche de silicium monocristallin. L'invention concerne également un procédé de préparation d'une cellule solaire à hétérojonction, comprenant : la formation séquentielle d'une couche de passivation de silicium amorphe intrinsèque, d'une couche de dopage de silicium amorphe, une couche conductrice transparente d'oxyde d'indium-étain mélangée à de l'eau, et une électrode sur au moins un côté d'une tranche de silicium monocristallin.
PCT/CN2018/103604 2017-12-21 2018-08-31 Cellule solaire à hétérojonction et son procédé de préparation Ceased WO2019119869A1 (fr)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115566094A (zh) * 2022-10-25 2023-01-03 常州捷佳创精密机械有限公司 异质结太阳能电池片及其制备方法
CN115863490A (zh) * 2021-09-24 2023-03-28 嘉兴阿特斯技术研究院有限公司 Pecvd法沉积本征非晶硅薄膜的方法、电池制备方法及电池
CN116344654A (zh) * 2021-12-22 2023-06-27 嘉兴阿特斯技术研究院有限公司 双面异质结太阳能电池及其制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109075218A (zh) * 2017-12-21 2018-12-21 君泰创新（北京）科技有限公司 一种太阳能异质结电池及其制备方法
CN108321240A (zh) * 2017-12-21 2018-07-24 君泰创新（北京）科技有限公司 一种太阳能异质结电池及其制备方法
CN112186062B (zh) * 2020-09-11 2022-10-04 隆基绿能科技股份有限公司 一种太阳能电池及其制作方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1395138A (zh) * 2001-06-29 2003-02-05 三洋电机株式会社 铟锡氧化膜的制造方法
US8216872B1 (en) * 2011-02-21 2012-07-10 National Applied Research Laboratories Method of integrating light-trapping layer to thin-film solar cell
CN106098801A (zh) * 2016-06-23 2016-11-09 盐城普兰特新能源有限公司 一种异质结太阳能电池及其制备方法
CN207529943U (zh) * 2017-12-21 2018-06-22 君泰创新（北京）科技有限公司 一种太阳能异质结电池
CN207529942U (zh) * 2017-12-21 2018-06-22 君泰创新（北京）科技有限公司 一种太阳能异质结电池
CN108321240A (zh) * 2017-12-21 2018-07-24 君泰创新（北京）科技有限公司 一种太阳能异质结电池及其制备方法
CN108321239A (zh) * 2017-12-21 2018-07-24 君泰创新（北京）科技有限公司 一种太阳能异质结电池及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004356623A (ja) * 2003-05-08 2004-12-16 Canon Inc 積層型光起電力素子及びその製造方法
US20110056552A1 (en) * 2008-03-19 2011-03-10 Sanyo Electric Co., Ltd. Solar cell and method for manufacturing the same
CN103907205B (zh) * 2011-10-27 2016-06-29 三菱电机株式会社 光电变换装置及其制造方法、以及光电变换模块
US11674217B2 (en) * 2016-03-29 2023-06-13 Ulvac, Inc. Method of manufacturing substrate with a transparent conductive film, manufacturing apparatus of substrate with transparent conductive film, substrate with transparent conductive film, and solar cell

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1395138A (zh) * 2001-06-29 2003-02-05 三洋电机株式会社 铟锡氧化膜的制造方法
US8216872B1 (en) * 2011-02-21 2012-07-10 National Applied Research Laboratories Method of integrating light-trapping layer to thin-film solar cell
CN106098801A (zh) * 2016-06-23 2016-11-09 盐城普兰特新能源有限公司 一种异质结太阳能电池及其制备方法
CN207529943U (zh) * 2017-12-21 2018-06-22 君泰创新（北京）科技有限公司 一种太阳能异质结电池
CN207529942U (zh) * 2017-12-21 2018-06-22 君泰创新（北京）科技有限公司 一种太阳能异质结电池
CN108321240A (zh) * 2017-12-21 2018-07-24 君泰创新（北京）科技有限公司 一种太阳能异质结电池及其制备方法
CN108321239A (zh) * 2017-12-21 2018-07-24 君泰创新（北京）科技有限公司 一种太阳能异质结电池及其制备方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115863490A (zh) * 2021-09-24 2023-03-28 嘉兴阿特斯技术研究院有限公司 Pecvd法沉积本征非晶硅薄膜的方法、电池制备方法及电池
CN116344654A (zh) * 2021-12-22 2023-06-27 嘉兴阿特斯技术研究院有限公司 双面异质结太阳能电池及其制备方法
CN115566094A (zh) * 2022-10-25 2023-01-03 常州捷佳创精密机械有限公司 异质结太阳能电池片及其制备方法

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