WO2019102800A1 - Insulated wire - Google Patents
Insulated wire Download PDFInfo
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- WO2019102800A1 WO2019102800A1 PCT/JP2018/040172 JP2018040172W WO2019102800A1 WO 2019102800 A1 WO2019102800 A1 WO 2019102800A1 JP 2018040172 W JP2018040172 W JP 2018040172W WO 2019102800 A1 WO2019102800 A1 WO 2019102800A1
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- Prior art keywords
- insulating layer
- insulated wire
- polyimide
- mass
- polyimide film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B7/00—Insulated conductors or cables characterised by their form
- H01B7/02—Disposition of insulation
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
- C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
Definitions
- the present disclosure relates to an insulated wire.
- the insulated wire used for the production of coils for motors and the like Since a general insulated wire is provided with a resin insulating layer on the outer peripheral surface side of the linear metal conductor, the resin insulating layer has not only insulation but also adhesion to the metal conductor, heat resistance and durability. Sex is required.
- Polyimide, polyamide imide, polyester imide, etc. are used as resin which forms an insulating layer of an insulated wire.
- polyimide is most suitably used as a material for forming an insulating layer of an insulated wire having high required performance because polyimide is the most excellent in heat resistance and high in durability and solvent resistance.
- a method of forming the insulating layer of the insulated wire for example, a method is known in which a varnish for forming an insulating film is applied to the outer peripheral surface of a metal conductor and then the varnish is baked (Patent Document 1).
- a varnish for forming an insulating film is applied to the outer peripheral surface of a metal conductor and then the varnish is baked (Patent Document 1).
- an insulating film having a thickness of about several ⁇ m is formed by one baking step.
- the application process and baking process of a varnish are implemented in multiple times until the insulating layer of sufficient thickness is formed.
- the outermost layer of the insulating layer is a polyimide layer
- the resin constituting the insulating layers other than the outermost layer is a polyamide imide or the like, whereby the insulating layer under the polyimide layer and the polyimide layer is formed.
- An insulated wire according to an aspect of the present invention is an insulated wire including a linear metal conductor and an insulating layer laminated on the outer peripheral surface side of the metal conductor, and the insulating layer is an insulating film having two or more insulating films. And at least one of the two or more insulating films is a polyimide film containing polyimide as a main component, and the insulating layer contains two or more types of residual solvents having different boiling points.
- An insulated wire according to another aspect of the present invention is an insulated wire including a linear metal conductor and an insulating layer laminated on the outer peripheral surface side of the metal conductor, wherein the insulating layer is two or more insulating layers. It has a laminated structure of films, and at least one of the two or more insulating films is a polyimide film mainly composed of polyimide, and the insulating layer contains two or more kinds of residual solvents having different boiling points, The content of each of the residual solvents in the insulating layer is 0.001% by mass or more and less than 0.1% by mass, and the total content of the two or more types of residual solvents in the insulating layer is 0.002% by mass More than 0.1% by mass or less, and the above-mentioned polyimide in the above-mentioned polyimide film is derived from a structural unit derived from pyromellitic dianhydride and 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride
- FIG. 1 is a schematic partial cross-sectional view showing an insulated wire according to an embodiment of the present invention.
- Polyimide having high solvent resistance has low affinity with the varnish. Therefore, even if a varnish containing polyimide is simply applied to the surface of the polyimide film, the adhesion between the two polyimide films after baking is not sufficiently improved. When the adhesion between the insulation films forming the insulation layer is low, the insulation film may be peeled off when the insulated wire provided with the insulation layer is subjected to winding processing.
- the present disclosure aims to provide an insulated wire capable of improving the adhesion between insulating films forming the insulating layer.
- An insulated wire according to an aspect of the present invention is an insulated wire including a linear metal conductor and an insulating layer laminated on the outer peripheral surface side of the metal conductor, and the insulating layer is an insulating film having two or more insulating films. And at least one of the two or more insulating films is a polyimide film containing polyimide as a main component, and the insulating layer contains two or more types of residual solvents having different boiling points.
- At least one of the two or more insulating films forming the laminated structure is a polyimide film mainly composed of polyimide, and the insulating layer containing this polyimide film contains two or more kinds of residual solvents having different boiling points.
- the varnish for forming the polyimide film contains two or more solvents having different boiling points, rapid drying of the varnish is suppressed at the time of formation of the polyimide film, so that the surface of the polyimide film tends to be smooth.
- the polyimide film contains two or more types of residual solvents, the affinity with other varnishes for forming an insulating film is improved.
- the said insulated wire can improve the adhesiveness between the insulating film which forms the insulating layer containing a polyimide film by providing the insulating layer containing 2 or more types of residual solvents in which boiling points differ.
- the main component refers to the component with the highest content, and usually represents a component of 50% by mass or more.
- the content of each of the residual solvents in the insulating layer is 0.001% by mass or more and less than 0.1% by mass, and the total content of the two or more types of residual solvents in the insulating layer is 0.002% by mass It is preferable that the content be 0.1% by mass or less.
- the polyimide in the polyimide film contains at least one of a structural unit derived from pyromellitic dianhydride and a structural unit derived from 3,3 ′, 4,4′-biphenyltetracarboxylic acid dianhydride Good.
- the insulated wire can be used. The heat resistance of the polyimide film can be improved.
- the polyimide in the polyimide film may include at least one of a structural unit derived from 4,4'-diaminodiphenyl ether and a structural unit derived from 4,4'-bis (4-aminophenoxy) biphenyl.
- the said insulated wire improves the heat resistance of a polyimide membrane by using at least any one of 4,4'- diaminodiphenyl ether and 4,4'- bis (4-amino phenoxy) biphenyl as diamine used as a raw material of polyimide. be able to.
- An intermediate insulating layer laminated between the metal conductor and the insulating layer is further provided, and the intermediate insulating layer is formed of a resin composition containing a thermosetting resin, a thermoplastic resin, or a mixture thereof as a main component. Good to have. It is because it can contribute to the improvement of the heat resistance of the above-mentioned middle insulating layer. From the viewpoint of improving the heat resistance, it is more preferable that the resin composition contains polyamideimide as a main component.
- the average thickness of the intermediate insulating layer is preferably 5 ⁇ m or more and 250 ⁇ m or less. While maintaining the strength of the intermediate insulating layer, it is possible to prevent the decrease in space factor of the coil formed of the insulated wire.
- the insulated wire 1 of FIG. 1 includes a linear metal conductor 2 and an insulating layer 3 laminated on the outer peripheral surface side of the metal conductor 2.
- the insulated wire 1 further includes an intermediate insulating layer 4 stacked between the metal conductor 2 and the insulating layer 3.
- the metal conductor 2 is a metal linear body responsible for the electrical conduction of the insulated wire 1 and is formed in a circular shape in a cross sectional view.
- the cross-sectional shape of the metal conductor 2 is not limited to a circle, and may be, for example, a rectangle, a rounded rectangle, or an ellipse.
- the metal conductor 2 may be a single linear body, or may be a stranded wire body in which a plurality of thin wires are twisted.
- the metal conductor 2 As a material of the metal conductor 2, for example, a metal such as copper, aluminum, nickel, silver, iron or the like or an alloy thereof is used, but it is preferable to use copper or aluminum from the viewpoint of conductivity and processability.
- the metal conductor 2 may have a multilayer structure in which a coating made of another metal is laminated on the outer peripheral surface of the linear body made of metal.
- the average cross-sectional area of the metal conductor 2 As a lower limit of the average cross-sectional area of the metal conductor 2, 0.01 mm 2 is preferable, and 0.1 mm 2 is more preferable. On the other hand, preferably 100 mm 2 as the upper limit of the average cross-sectional area of the metal conductor 2, 50 mm 2 is more preferable. If the average cross-sectional area of the metal conductor 2 does not reach the above lower limit, the electrical resistance of the metal conductor 2 may increase, and heat generation may occur when the insulated wire 1 is used. On the contrary, when the average cross-sectional area of the metal conductor 2 exceeds the above-mentioned upper limit, the cross-sectional area of the insulated wire 1 becomes large, and there is a possibility that the coil etc. manufactured using the insulated wire 1 may become large.
- the average cross-sectional area indicates an average value of cross-sectional areas in any five cross-sectional views.
- the intermediate insulating layer 4 is a covering layer covering the outer periphery of the metal conductor 2 and has an insulating property.
- the intermediate insulating layer 4 is laminated on the outer peripheral surface of the metal conductor 2 as shown in FIG. 1, but may be laminated on the outer peripheral surface side of the metal conductor 2, and the metal conductor 2 and the intermediate insulating layer 4 Another layer may be laminated between the layers.
- the intermediate insulating layer 4 is formed of a resin composition containing a thermosetting resin, a thermoplastic resin, or a mixture thereof as a main component.
- a resin composition polyamide imide, polyester imide, polyether imide, H type polyester, polyester imide, polyurethane etc. are used, for example.
- polyamide imide from the viewpoint of heat resistance improvement.
- a hardening agent may be added to the intermediate insulating layer 4 as necessary.
- the lower limit of the average thickness of the intermediate insulating layer 4 is preferably 5 ⁇ m, more preferably 10 ⁇ m, and still more preferably 15 ⁇ m.
- the upper limit of the average thickness of the intermediate insulating layer 4 is preferably 250 ⁇ m, more preferably 200 ⁇ m, and still more preferably 150 ⁇ m. If the average thickness of the intermediate insulating layer 4 is less than the above lower limit, the strength of the intermediate insulating layer 4 may be insufficient. Conversely, when the average thickness of the intermediate insulating layer 4 exceeds the upper limit, the space factor of the coil formed of the insulated wire 1 may be reduced.
- the average thickness indicates an average value of any five thicknesses in one cross-sectional view.
- the intermediate insulating layer 4 is formed by applying a varnish obtained by dissolving the above-described resin composition in a volatile solvent on the outer peripheral surface of the metal conductor 2 and then evaporating the solvent by heating and curing the resin composition. Be done.
- the insulating layer 3 is a covering layer covering the outer periphery of the intermediate insulating layer 4 and has an insulating property. Although the insulating layer 3 is laminated on the outer peripheral surface of the intermediate insulating layer 4 in FIG. 1, it may be laminated on the outer peripheral surface side of the metal conductor 2, and the other insulating layer 3 may be interposed between the intermediate insulating layer 4 and the insulating layer 3. Layers may be stacked.
- the insulating layer 3 has a laminated structure of two or more insulating films. Specifically, as shown in FIG. 1, the insulating layer 3 is an insulating film 3 c laminated on the outer peripheral surface of the intermediate insulating layer 4, an insulating film 3 b laminated on the outer peripheral surface of the insulating film 3 c, and an insulating film And an insulating film 3a to be laminated on the outer peripheral surface of 3b, and these insulating films form a laminated structure.
- the insulating layer 3 should just have a laminated structure of two or more insulating films, and is not limited to what has a laminated structure of three insulating films.
- the lower limit of the average thickness of the insulating layer 3 is preferably 5 ⁇ m, more preferably 10 ⁇ m, and still more preferably 15 ⁇ m.
- the upper limit of the average thickness of the insulating layer 3 is preferably 250 ⁇ m, more preferably 200 ⁇ m, and still more preferably 150 ⁇ m. If the average thickness of the insulating layer 3 is less than the above lower limit, the strength of the insulating layer 3 may be insufficient. Conversely, when the average thickness of the insulating layer 3 exceeds the upper limit, the space factor of the coil formed of the insulated wire 1 may be reduced.
- the insulating film 3a, the insulating film 3b, and the insulating film 3c are polyimide films containing polyimide as a main component, and contain two or more types of residual solvents having different boiling points.
- the entire insulating film forming the insulating layer 3 does not have to be a polyimide film, and at least one of the two or more insulating films contains polyimide as a main component, and contains two or more types of residual solvents having different boiling points. It may be a film.
- the upper limit of the content may be less than 100% by mass, but the upper limit of the content is preferably 98% by mass, and more preferably 95% by mass.
- the content exceeds the preferable upper limit, it is difficult to add other additives to the polyimide film, and there is a possibility that the design freedom of the polyimide film may be reduced.
- a varnish for forming a polyimide film can be obtained by dissolving tetracarboxylic acid dianhydride and diamine as raw materials of polyamic acid in a solvent and then promoting a condensation polymerization reaction of tetracarboxylic acid dianhydride and diamine. .
- the polyamic acid which is a precursor of polyimide is imidated by heating and becomes polyimide.
- the polyimide film is formed by applying the varnish to the outer peripheral surface of the intermediate insulating layer 4 or the other insulating film, and then baking to evaporate most of the solvent and imidizing the polyamic acid in the solvent.
- additives such as a pigment, a dye, an inorganic or organic filler, a lubricant, and an adhesion improver may be added to the varnish for forming a polyimide film, as needed.
- the polyimide in the polyimide film contains at least one of a structural unit derived from pyromellitic dianhydride and a structural unit derived from 3,3 ′, 4,4′-biphenyltetracarboxylic acid dianhydride. There is.
- At least one of 4,4'-diaminodiphenyl ether (ODA) and 4,4'-bis (4-aminophenoxy) biphenyl (BAPB) is used as a diamine which is a raw material of polyamic acid. Therefore, the polyimide in the polyimide film contains at least one of structural units derived from 4,4'-diaminodiphenyl ether and structural units derived from 4,4'-bis (4-aminophenoxy) biphenyl.
- diamines 4,4'- methylenedianiline (MDA), 2, 2-bis [4- (amino phenoxy) phenyl] propane (BAPP) as a diamine used as the raw material of a polyamic acid 1,4-bis (4-aminophenoxy) benzene (TPE-Q), 1,3-bis (4-aminophenoxy) benzene (TPE-R), 1,1-bis [4- (4-aminophenoxy) ) Diamines such as phenyl] cyclohexane (4-APBZ), 1,3-bis (3-aminophenoxy) benzene (3-APB), 1,5-bis (3-aminophenoxy) naphthalene (1,5-BAPN) May be used.
- MDA 2, 2-bis [4- (amino phenoxy) phenyl] propane
- TPE-Q 1,4-bis (4-aminophenoxy) benzene
- TPE-R 1,3-bis (4-aminophenoxy
- Examples of the solvent contained in the varnish for forming a polyimide film include N-methylpyrrolidone (NMP), N-ethylpyrrolidone (NEP), N, N-dimethylformamide (DMF), N, N-dimethylacetamide (DMAc), Two types of aprotic polar solvents such as monomethylformaldehyde (NMF), ⁇ -alkoxypropionamide, 3-methoxy-N, N-dimethylpropanamide, dimethylsulfoxide (DMSO), and ⁇ -butyrolactone ( ⁇ -BL) The above is used in combination.
- NMP N-methylpyrrolidone
- NEP N-ethylpyrrolidone
- DMF N-dimethylformamide
- DMAc N-dimethylacetamide
- Two types of aprotic polar solvents such as monomethylformaldehyde (NMF), ⁇ -alkoxypropionamide, 3-methoxy-N, N-di
- the solvent which has not volatilized by baking remains on the polyimide film. That is, the polyimide film contains at least two or more kinds of residual solvents having different boiling points.
- the upper limit of the content is preferably less than 0.1% by mass, more preferably less than 0.08% by mass, and still more preferably less than 0.07% by mass. If the content is less than the above lower limit, the surface of the polyimide film may not be formed smooth. On the other hand, when the content is equal to or more than the upper limit, the dielectric constant of the polyimide film may be increased, and the insulation of the polyimide film may be reduced.
- the content of each of the residual solvents in the insulating layer is the same as the residual solvent in the polyimide film.
- the lower limit of the total content of the two or more types of residual solvents relative to the polyimide film is preferably 0.002% by mass, more preferably 0.01% by mass, and still more preferably 0.02% by mass.
- the upper limit of the content is preferably 0.1% by mass, more preferably 0.09% by mass, and still more preferably 0.08% by mass.
- the content is less than the above lower limit, the surface of the polyimide film may not be formed smooth, and the affinity between the polyimide film and the varnish for forming the insulating film may not be sufficiently improved.
- the content exceeds the upper limit the dielectric constant of the polyimide film may be increased, and the insulation of the polyimide film may be reduced.
- the total content of the two or more types of residual solvents in the insulating layer is the same as the total content of the two or more types of residual solvents in the polyimide film.
- the insulating film 3a, the insulating film 3b and the insulating film 3c forming the laminated structure are a polyimide film, and the polyimide film is mainly composed of polyimide and contains two or more kinds of residual solvents having different boiling points. doing.
- the said insulated wire 1 suppresses rapid drying of the varnish for polyimide film formation at the time of forming a polyimide film, and promotes smoothing of the surface of a polyimide film.
- the said insulated wire 1 contains 2 or more types of residual solvents of a suitable quantity in a polyimide film, the affinity of the polyimide film and the varnish for other insulating film formation is improved. Therefore, the said insulated wire 1 can improve the adhesiveness between the insulation films which form the insulating layer 3.
- the polyimide in the polyimide film is a structural unit derived from pyromellitic dianhydride and a structural unit derived from 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride. Since the insulating layer 3 contains at least one of structural units derived from 4,4'-diaminodiphenyl ether and / or structural units derived from 4,4'-bis (4-aminophenoxy) biphenyl, The heat resistance of the formed polyimide film can be improved.
- the insulated wire 1 does not need to be equipped with the intermediate
- the insulated wire 1 may be provided with the linear metal conductor 2 and the insulating layer 3 directly laminated on the outer peripheral surface of the metal conductor 2.
- the polyimide film may contain three or more types of residual solvents having different boiling points.
- the content of each of the two or more types of residual solvents selected from the three or more types of residual solvents contained in the polyimide film is 0.001% by mass or more and less than 0.1% by mass, and the polyimide film is The total content of all residual solvents contained may be 0.002% by mass or more and 0.1% by mass or less.
- the varnish for polyimide film formation was prepared using the following tetracarboxylic acid dianhydride, diamine and a solvent.
- a varnish for forming a polyimide film is to promote the condensation polymerization reaction of tetracarboxylic acid dianhydride and diamine after dissolving tetracarboxylic acid dianhydride and diamine as raw materials of polyamic acid in a solvent in an equimolar ratio. Obtained by The composition of the tetracarboxylic acid dianhydride as the raw material, the composition of the diamine and the composition of the solvent used are shown in Table 1. In Table 1, the composition ratio of tetracarboxylic dianhydride and the composition ratio of diamine are shown by molar ratio, and the composition ratio of the solvent is shown by mass ratio.
- Tetracarboxylic acid dianhydride As a tetracarboxylic acid dianhydride used as a raw material of a polyamic acid, pyromellitic dianhydride and 3,3 ', 4,4'-biphenyltetracarboxylic acid dianhydride were used. In Table 1, these acid anhydrides are denoted as PMDA and BPDA, respectively, and the composition ratios are shown such that the total of these is 100.
- diamines (Diamine) 4,4'-Diaminodiphenyl ether and 4,4'-bis (4-aminophenoxy) biphenyl were used as diamines to be a raw material of the polyamic acid.
- these diamine is each displayed as ODA and BAPB, and the composition ratio is shown so that the sum total of these may be set to 100.
- solvent As the solvent, “NMP” (N-methyl pyrrolidone, boiling point 202 ° C.) of Mitsubishi Chemical Corporation, “NMF” (monomethyl formaldehyde, boiling point 199 ° C.) of Mitsubishi Gas Chemical Co., Ltd., “DMAC” of Mitsubishi Gas Chemical Co., Ltd. (N, N-dimethylacetamide, boiling point 165 ° C.), Tokyo Chemical Industry Co., Ltd. “D0722” (N, N-dimethylformamide, boiling point 153 ° C.), Idemitsu Kosan Co., Ltd.
- Equamide M100 ( ⁇ -alkoxypropionamide) Boiling point 216 ° C.
- E0358 N-ethyl pyrrolidone, boiling point 218 ° C.) of Tokyo Chemical Industry Co., Ltd.
- GBL ⁇ -butyrolactone, boiling point 204 ° C.
- the measurement of the relative permittivity of the insulating layer is performed by applying silver paste to three places on the surface of the insulated wire, and then measuring the capacitance between the silver paste and the copper wire with an LCR meter at normal temperature.
- the relative dielectric constant was calculated from the value of the capacitance and the thickness of the insulating layer.
- peeling test In the peeling test, after prestretching the insulated wire by 20% in the longitudinal direction, the insulated wire is wound 30 times around an iron core having the same diameter as the insulated wire, and whether cracking or peeling occurs in the insulating layer Adopted a method to confirm the In Table 2, A indicates that cracking or peeling did not occur in the insulating layer, and B indicates that cracking or peeling occurred in the insulating layer.
- the 12 insulated wires are examples in which the polyimide film forming the insulating layer contains two or three types of residual solvents, and the content of each residual solvent to the polyimide film is 0.001 mass. % Or more and less than 0.1% by mass, and the total content of the residual solvent to the polyimide film is 0.002% by mass or more and 0.1% by mass or less.
- No. 1 to No. In the 12 insulated wires, it was confirmed that the relative dielectric constant of the insulating layer is 3.2 or more and 3.3 or less and that cracking or peeling does not occur in the insulating layer even in the peeling test. That is, no. 1 to No. In the 12 insulated wires, the dielectric constant of the insulating layer is low, and it can be said that the adhesion between the polyimide films forming the insulating layer is high.
- the insulated wire of 14 is an example in which the polyimide film forming the insulating layer contains only one type of residual solvent. No. 13 to No. In the insulated wire of No. 14, it was confirmed that cracking and peeling occur in the insulating layer also in the peeling test. That is, no. 13 to No. In the 14 insulated wires, it can be said that the adhesion between the polyimide films forming the insulating layer is not sufficient.
- the insulated wire of No. 15 is an example in which the polyimide film forming the insulating layer contains only one type of residual solvent, and is an example in which the content of the residual solvent with respect to the polyimide film is 0.1% by mass or more.
- the dielectric constant of the insulating layer is 3.6, and it can be said that the dielectric constant of the insulating layer is high.
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Abstract
Description
本開示は、絶縁電線に関する。 The present disclosure relates to an insulated wire.
本出願は、2017年11月27日出願の日本出願第2017-227118号に基づく優先権を主張し、前記日本出願に記載された全ての記載内容を援用するものである。 This application claims the priority based on Japanese Patent Application No. 2017-227118 filed on Nov. 27, 2017, and incorporates all the contents described in the aforementioned Japanese application.
モーター用コイル等の製造に用いられる絶縁電線には、優れた耐熱性及び耐久性が求められる。一般的な絶縁電線は、線状の金属導体の外周面側に樹脂製の絶縁層を備えているため、この樹脂製の絶縁層には、絶縁性とともに金属導体に対する密着性、耐熱性及び耐久性が求められる。 Excellent heat resistance and durability are required of the insulated wire used for the production of coils for motors and the like. Since a general insulated wire is provided with a resin insulating layer on the outer peripheral surface side of the linear metal conductor, the resin insulating layer has not only insulation but also adhesion to the metal conductor, heat resistance and durability. Sex is required.
絶縁電線の絶縁層を形成する樹脂としては、ポリイミド、ポリアミドイミド、ポリエステルイミド等が用いられている。これらの樹脂の中でもポリイミドは、最も耐熱性に優れており、耐久性及び耐溶剤性も高いため、要求性能の高い絶縁電線の絶縁層の形成材料として好適に用いられている。 Polyimide, polyamide imide, polyester imide, etc. are used as resin which forms an insulating layer of an insulated wire. Among these resins, polyimide is most suitably used as a material for forming an insulating layer of an insulated wire having high required performance because polyimide is the most excellent in heat resistance and high in durability and solvent resistance.
一方、絶縁電線の絶縁層の形成方法としては、例えば金属導体の外周面に絶縁皮膜形成用のワニスを塗布した後、このワニスを焼き付ける方法が知られている(特許文献1)。この方法では1回の焼き付け工程により数μm程度の厚みの絶縁皮膜が形成される。そして十分な厚みの絶縁層が形成されるまで、ワニスの塗布工程及び焼き付け工程が複数回実施される。 On the other hand, as a method of forming the insulating layer of the insulated wire, for example, a method is known in which a varnish for forming an insulating film is applied to the outer peripheral surface of a metal conductor and then the varnish is baked (Patent Document 1). In this method, an insulating film having a thickness of about several μm is formed by one baking step. And the application process and baking process of a varnish are implemented in multiple times until the insulating layer of sufficient thickness is formed.
特許文献1に記載された絶縁電線は、絶縁層の最外層をポリイミド層とし、最外層以外の絶縁層を構成する樹脂をポリアミドイミド等とすることで、ポリイミド層とポリイミド層の下層の絶縁層との密着力を向上させる。 In the insulated wire described in Patent Document 1, the outermost layer of the insulating layer is a polyimide layer, and the resin constituting the insulating layers other than the outermost layer is a polyamide imide or the like, whereby the insulating layer under the polyimide layer and the polyimide layer is formed. Improve adhesion with
本発明の一態様に係る絶縁電線は、線状の金属導体と、この金属導体の外周面側に積層される絶縁層とを備える絶縁電線であって、上記絶縁層が、2以上の絶縁皮膜の積層構造を有し、上記2以上の絶縁皮膜の少なくとも1つが、ポリイミドを主成分とするポリイミド皮膜であり、上記絶縁層が、沸点の異なる2種類以上の残留溶剤を含有する。 An insulated wire according to an aspect of the present invention is an insulated wire including a linear metal conductor and an insulating layer laminated on the outer peripheral surface side of the metal conductor, and the insulating layer is an insulating film having two or more insulating films. And at least one of the two or more insulating films is a polyimide film containing polyimide as a main component, and the insulating layer contains two or more types of residual solvents having different boiling points.
本発明の他の態様に係る絶縁電線は、線状の金属導体と、この金属導体の外周面側に積層される絶縁層とを備える絶縁電線であって、上記絶縁層が、2以上の絶縁皮膜の積層構造を有し、上記2以上の絶縁皮膜の少なくとも1つが、ポリイミドを主成分とするポリイミド皮膜であり、上記絶縁層が、沸点の異なる2種類以上の残留溶剤を含有しており、上記絶縁層に対する上記残留溶剤それぞれの含有量が、0.001質量%以上0.1質量%未満であり、上記絶縁層に対する上記2種類以上の残留溶剤の合計含有量が、0.002質量%以上0.1質量%以下であり、上記ポリイミド皮膜中の上記ポリイミドが、ピロメリット酸二無水物に由来する構造単位及び3,3’,4,4’-ビフェニルテトラカルボン酸二無水物に由来する構造単位の少なくともいずれかを含んでおり、上記ポリイミド皮膜中の上記ポリイミドが、4,4’-ジアミノジフェニルエーテルに由来する構造単位及び4,4’-ビス(4-アミノフェノキシ)ビフェニルに由来する構造単位の少なくともいずれかを含む。 An insulated wire according to another aspect of the present invention is an insulated wire including a linear metal conductor and an insulating layer laminated on the outer peripheral surface side of the metal conductor, wherein the insulating layer is two or more insulating layers. It has a laminated structure of films, and at least one of the two or more insulating films is a polyimide film mainly composed of polyimide, and the insulating layer contains two or more kinds of residual solvents having different boiling points, The content of each of the residual solvents in the insulating layer is 0.001% by mass or more and less than 0.1% by mass, and the total content of the two or more types of residual solvents in the insulating layer is 0.002% by mass More than 0.1% by mass or less, and the above-mentioned polyimide in the above-mentioned polyimide film is derived from a structural unit derived from pyromellitic dianhydride and 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride Structure Structural unit derived from 4,4′-diaminodiphenyl ether and structural unit derived from 4,4′-bis (4-aminophenoxy) biphenyl. At least one of
[本開示が解決しようとする課題]
耐溶剤性の高いポリイミドは、ワニスとの親和性が低い。このため、単にポリイミド皮膜の表面にポリイミドを含有するワニスが塗布されても、焼き付け後の2つのポリイミド皮膜間の密着力は十分に向上しない。そして絶縁層を形成する絶縁皮膜間の密着力が低いと、この絶縁層を備える絶縁電線が巻線加工される際に、絶縁皮膜が剥離するおそれがある。
[Problems to be solved by the present disclosure]
Polyimide having high solvent resistance has low affinity with the varnish. Therefore, even if a varnish containing polyimide is simply applied to the surface of the polyimide film, the adhesion between the two polyimide films after baking is not sufficiently improved. When the adhesion between the insulation films forming the insulation layer is low, the insulation film may be peeled off when the insulated wire provided with the insulation layer is subjected to winding processing.
上述のような事情に基づき、本開示は、絶縁層を形成する絶縁皮膜間の密着力を向上させることが可能な絶縁電線を提供することを目的とする。 Based on the circumstances as described above, the present disclosure aims to provide an insulated wire capable of improving the adhesion between insulating films forming the insulating layer.
[本開示の効果]
本開示によれば、絶縁層を形成する絶縁皮膜間の密着力を向上させることが可能な絶縁電線を提供することができる。
[Effect of the present disclosure]
According to the present disclosure, it is possible to provide an insulated wire capable of improving the adhesion between insulating films forming the insulating layer.
[本発明の実施形態の説明]
最初に本発明の実施態様を列記して説明する。
Description of the embodiment of the present invention
First, the embodiments of the present invention will be listed and described.
本発明の一態様に係る絶縁電線は、線状の金属導体と、この金属導体の外周面側に積層される絶縁層とを備える絶縁電線であって、上記絶縁層が、2以上の絶縁皮膜の積層構造を有し、上記2以上の絶縁皮膜の少なくとも1つが、ポリイミドを主成分とするポリイミド皮膜であり、上記絶縁層が、沸点の異なる2種類以上の残留溶剤を含有する。 An insulated wire according to an aspect of the present invention is an insulated wire including a linear metal conductor and an insulating layer laminated on the outer peripheral surface side of the metal conductor, and the insulating layer is an insulating film having two or more insulating films. And at least one of the two or more insulating films is a polyimide film containing polyimide as a main component, and the insulating layer contains two or more types of residual solvents having different boiling points.
当該絶縁電線は、積層構造を形成する2以上の絶縁皮膜の少なくとも1つがポリイミドを主成分とするポリイミド皮膜であり、このポリイミド皮膜を含む絶縁層が、沸点の異なる2種類以上の残留溶剤を含有する。ポリイミド皮膜形成用のワニスに沸点の異なる2種類以上の溶剤が含まれていると、ポリイミド皮膜の形成時にワニスの急激な乾燥が抑制されるため、ポリイミド皮膜の表面が平滑に形成されやすい。また、ポリイミド皮膜は、2種類以上の残留溶剤を含有しているので、他の絶縁皮膜形成用のワニスとの親和性が向上している。したがって、当該絶縁電線は、沸点の異なる2種類以上の残留溶剤を含有する絶縁層を備えることで、ポリイミド皮膜を含む絶縁層を形成する絶縁皮膜間の密着力を向上させることができる。ここで、主成分とは、最も含有量の多い成分を示し、通常50質量%以上の成分を示す。 In the insulated wire, at least one of the two or more insulating films forming the laminated structure is a polyimide film mainly composed of polyimide, and the insulating layer containing this polyimide film contains two or more kinds of residual solvents having different boiling points. Do. When the varnish for forming the polyimide film contains two or more solvents having different boiling points, rapid drying of the varnish is suppressed at the time of formation of the polyimide film, so that the surface of the polyimide film tends to be smooth. In addition, since the polyimide film contains two or more types of residual solvents, the affinity with other varnishes for forming an insulating film is improved. Therefore, the said insulated wire can improve the adhesiveness between the insulating film which forms the insulating layer containing a polyimide film by providing the insulating layer containing 2 or more types of residual solvents in which boiling points differ. Here, the main component refers to the component with the highest content, and usually represents a component of 50% by mass or more.
上記絶縁層に対する上記残留溶剤それぞれの含有量が、0.001質量%以上0.1質量%未満であり、上記絶縁層に対する上記2種類以上の残留溶剤の合計含有量が、0.002質量%以上0.1質量%以下であるとよい。これにより、当該絶縁電線は、適切に絶縁層を形成する絶縁皮膜間の密着力を向上させることができる。 The content of each of the residual solvents in the insulating layer is 0.001% by mass or more and less than 0.1% by mass, and the total content of the two or more types of residual solvents in the insulating layer is 0.002% by mass It is preferable that the content be 0.1% by mass or less. Thereby, the said insulated wire can improve the adhesiveness between the insulation films which form an insulation layer appropriately.
上記ポリイミド皮膜中の上記ポリイミドが、ピロメリット酸二無水物に由来する構造単位及び3,3’,4,4’-ビフェニルテトラカルボン酸二無水物に由来する構造単位の少なくともいずれかを含むとよい。当該絶縁電線は、ポリイミドの原料となるテトラカルボン酸二無水物としてピロメリット酸二無水物及び3,3’,4,4’-ビフェニルテトラカルボン酸二無水物の少なくともいずれかを用いることで、ポリイミド皮膜の耐熱性を向上させることができる。 When the polyimide in the polyimide film contains at least one of a structural unit derived from pyromellitic dianhydride and a structural unit derived from 3,3 ′, 4,4′-biphenyltetracarboxylic acid dianhydride Good. By using at least one of pyromellitic dianhydride and 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride as the tetracarboxylic acid dianhydride serving as a raw material of the polyimide, the insulated wire can be used. The heat resistance of the polyimide film can be improved.
上記ポリイミド皮膜中の上記ポリイミドが、4,4’-ジアミノジフェニルエーテルに由来する構造単位及び4,4’-ビス(4-アミノフェノキシ)ビフェニルに由来する構造単位の少なくともいずれかを含むとよい。当該絶縁電線は、ポリイミドの原料となるジアミンとして4,4’-ジアミノジフェニルエーテル及び4,4’-ビス(4-アミノフェノキシ)ビフェニルの少なくともいずれかを用いることで、ポリイミド皮膜の耐熱性を向上させることができる。 The polyimide in the polyimide film may include at least one of a structural unit derived from 4,4'-diaminodiphenyl ether and a structural unit derived from 4,4'-bis (4-aminophenoxy) biphenyl. The said insulated wire improves the heat resistance of a polyimide membrane by using at least any one of 4,4'- diaminodiphenyl ether and 4,4'- bis (4-amino phenoxy) biphenyl as diamine used as a raw material of polyimide. be able to.
上記金属導体と上記絶縁層との間に積層される中間絶縁層をさらに備え、上記中間絶縁層が、熱硬化性樹脂、熱可塑性樹脂又はこれらの混合物を主成分とする樹脂組成物から形成されているとよい。上記中間絶縁層の耐熱性の向上に寄与しうるからである。また、この耐熱性向上の観点から、上記樹脂組成物がポリアミドイミドを主成分とするのがさらによい。 An intermediate insulating layer laminated between the metal conductor and the insulating layer is further provided, and the intermediate insulating layer is formed of a resin composition containing a thermosetting resin, a thermoplastic resin, or a mixture thereof as a main component. Good to have. It is because it can contribute to the improvement of the heat resistance of the above-mentioned middle insulating layer. From the viewpoint of improving the heat resistance, it is more preferable that the resin composition contains polyamideimide as a main component.
上記中間絶縁層の平均厚さが、5μm以上250μm以下であるとよい。中間絶縁層の強度を維持するとともに、上記絶縁電線で形成されるコイルの占積率の低下を防止しうるからである。 The average thickness of the intermediate insulating layer is preferably 5 μm or more and 250 μm or less. While maintaining the strength of the intermediate insulating layer, it is possible to prevent the decrease in space factor of the coil formed of the insulated wire.
[本発明の実施形態の詳細]
以下、適宜図面を参照しつつ、本発明の実施形態に係る絶縁電線を説明する。
Details of the Embodiment of the Present Invention
Hereinafter, the insulated wire concerning the embodiment of the present invention is explained, referring to drawings suitably.
[絶縁電線]
図1の絶縁電線1は、線状の金属導体2と、この金属導体2の外周面側に積層される絶縁層3とを備えている。また、絶縁電線1は、金属導体2及び絶縁層3間に積層される中間絶縁層4をさらに備えている。
[Insulated wire]
The insulated wire 1 of FIG. 1 includes a
<金属導体>
金属導体2は、絶縁電線1の電気伝導を担う金属製の線状体であり、横断面視で円形に形成されている。金属導体2の断面形状は、円形に限定されず、例えば矩形、角丸長方形又は楕円形であってもよい。また、金属導体2は、1つの線状体であってもよいし、複数の細線を撚り合わせた撚り線体であってもよい。
<Metal conductor>
The
金属導体2の材料としては、例えば銅、アルミニウム、ニッケル、銀、鉄等の金属又はこれらの合金が用いられるが、導電性及び加工性の観点から、銅又はアルミニウムが用いられると好ましい。また、金属導体2は、金属製の線状体の外周面に他の金属製の被膜を積層した多層構造を有していてもよい。
As a material of the
金属導体2の平均断面積の下限としては、0.01mm2が好ましく、0.1mm2がより好ましい。一方、金属導体2の平均断面積の上限としては100mm2が好ましく、50mm2がより好ましい。金属導体2の平均断面積が上記下限に満たないと、金属導体2の電気抵抗が増大し、絶縁電線1の使用時における発熱が大きくなるおそれがある。逆に、金属導体2の平均断面積が上記上限を超えると、絶縁電線1の断面積が大きくなり、絶縁電線1を用いて製造されるコイル等が大型化するおそれがある。ここで、平均断面積とは、任意の5つの横断面視における断面積の平均値を示す。
As a lower limit of the average cross-sectional area of the
<中間絶縁層>
中間絶縁層4は、金属導体2の外周を覆う被覆層であり、絶縁性を有している。中間絶縁層4は、図1に示すように、金属導体2の外周面に積層されているが、金属導体2の外周面側に積層されていればよく、金属導体2と中間絶縁層4との間に他の層が積層されていてもよい。
<Intermediate insulating layer>
The intermediate
中間絶縁層4は、熱硬化性樹脂、熱可塑性樹脂又はこれらの混合物を主成分とする樹脂組成物で形成されている。樹脂組成物としては、例えばポリアミドイミド、ポリエステルイミド、ポリエーテルイミド、H種ポリエステル、ポリエステルイミド、ポリウレタン等が用いられる。これらの樹脂組成物の中でも、耐熱性向上の観点から、ポリアミドイミドが用いられると好ましい。なお、中間絶縁層4には、必要に応じて硬化剤が添加されてもよい。
The intermediate
中間絶縁層4の平均厚さの下限としては、5μmが好ましく、10μmがより好ましく、15μmがさらに好ましい。一方、中間絶縁層4の平均厚さの上限としては、250μmが好ましく、200μmがより好ましく、150μmがさらに好ましい。中間絶縁層4の平均厚さが上記下限に満たないと、中間絶縁層4の強度が不足するおそれがある。逆に、中間絶縁層4の平均厚さが上記上限を超えると、絶縁電線1で形成されるコイルの占積率が低下するおそれがある。ここで、平均厚さとは、1つの横断面視における任意の5か所の厚さの平均値を示す。
The lower limit of the average thickness of the intermediate insulating
中間絶縁層4は、揮発性の溶剤中に上述の樹脂組成物を溶解させたワニスを金属導体2の外周面に塗布した後、加熱によって溶剤を揮発させるとともに樹脂組成物を硬化させることにより形成される。
The intermediate
<絶縁層>
絶縁層3は、中間絶縁層4の外周を覆う被覆層であり、絶縁性を有している。絶縁層3は、図1では中間絶縁層4の外周面に積層されているが、金属導体2の外周面側に積層されていればよく、中間絶縁層4と絶縁層3との間に他の層が積層されていてもよい。
<Insulating layer>
The insulating
絶縁層3は、2以上の絶縁皮膜の積層構造を有している。具体的には、絶縁層3は、図1に示すように、中間絶縁層4の外周面に積層される絶縁皮膜3cと、絶縁皮膜3cの外周面に積層される絶縁皮膜3bと、絶縁皮膜3bの外周面に積層される絶縁皮膜3aとを有し、これらの絶縁皮膜が積層構造を形成している。なお、絶縁層3は、2以上の絶縁皮膜の積層構造を有していればよく、3つの絶縁皮膜の積層構造を有するものに限定されない。
The insulating
絶縁層3の平均厚さの下限としては、5μmが好ましく、10μmがより好ましく、15μmがさらに好ましい。一方、絶縁層3の平均厚さの上限としては、250μmが好ましく、200μmがより好ましく、150μmがさらに好ましい。絶縁層3の平均厚さが上記下限に満たないと、絶縁層3の強度が不足するおそれがある。逆に、絶縁層3の平均厚さが上記上限を超えると、絶縁電線1で形成されるコイルの占積率が低下するおそれがある。
The lower limit of the average thickness of the insulating
(絶縁皮膜)
絶縁皮膜3a、絶縁皮膜3b及び絶縁皮膜3cは、ポリイミドを主成分とするポリイミド皮膜であり、沸点の異なる2種類以上の残留溶剤を含有している。なお、絶縁層3を形成する絶縁皮膜の全てがポリイミド皮膜でなくてもよく、2以上の絶縁皮膜の少なくとも1つが、ポリイミドを主成分とし、沸点の異なる2種類以上の残留溶剤を含有するポリイミド皮膜であればよい。
(Insulating film)
The insulating film 3a, the insulating
ポリイミド皮膜におけるポリイミドの含有量の下限としては、50質量%が好ましく、55質量%がより好ましく、60質量%がさらに好ましい。一方、上記含有量の上限は100質量%未満であればよいが、上記含有量の上限としては、98質量%が好ましく、95質量%がより好ましい。上記含有量が上記下限未満であると、ポリイミド皮膜が十分な耐熱性を持たないおそれがある。逆に、上記含有量が好ましい上記上限を超えると、ポリイミド皮膜に他の添加物を加えることが困難となり、ポリイミド皮膜の設計自由度が低下するおそれがある。 As a minimum of content of polyimide in polyimide membrane, 50 mass% is preferred, 55 mass% is more preferred, and 60 mass% is still more preferred. On the other hand, the upper limit of the content may be less than 100% by mass, but the upper limit of the content is preferably 98% by mass, and more preferably 95% by mass. There exists a possibility that a polyimide membrane may not have sufficient heat resistance as the said content is less than the said minimum. Conversely, when the content exceeds the preferable upper limit, it is difficult to add other additives to the polyimide film, and there is a possibility that the design freedom of the polyimide film may be reduced.
ポリイミド皮膜形成用のワニスは、ポリアミド酸の原料となるテトラカルボン酸二無水物及びジアミンを溶剤中に溶解させた後、テトラカルボン酸二無水物及びジアミンの縮合重合反応を促進することにより得られる。ポリイミドの前駆体であるポリアミド酸は、加熱によりイミド化されてポリイミドとなる。ポリイミド皮膜は、このワニスを中間絶縁層4又は他の絶縁皮膜の外周面に塗布した後、焼き付けによって大部分の溶剤を揮発させるとともに溶剤中のポリアミド酸をイミド化することにより形成される。なお、ポリイミド皮膜形成用のワニスには、顔料、染料、無機又は有機のフィラー、潤滑剤、密着向上剤等の添加剤が必要に応じて添加されてもよい。
A varnish for forming a polyimide film can be obtained by dissolving tetracarboxylic acid dianhydride and diamine as raw materials of polyamic acid in a solvent and then promoting a condensation polymerization reaction of tetracarboxylic acid dianhydride and diamine. . The polyamic acid which is a precursor of polyimide is imidated by heating and becomes polyimide. The polyimide film is formed by applying the varnish to the outer peripheral surface of the intermediate insulating
ポリアミド酸の原料となるテトラカルボン酸二無水物としては、ピロメリット酸二無水物(PMDA)及び3,3’,4,4’-ビフェニルテトラカルボン酸二無水物(BPDA)の少なくともいずれかが用いられる。したがって、ポリイミド皮膜中のポリイミドは、ピロメリット酸二無水物に由来する構造単位及び3,3’,4,4’-ビフェニルテトラカルボン酸二無水物に由来する構造単位の少なくともいずれかを含んでいる。 As tetracarboxylic acid dianhydride which becomes a raw material of polyamic acid, at least one of pyromellitic acid dianhydride (PMDA) and 3,3 ', 4,4'-biphenyl tetracarboxylic acid dianhydride (BPDA) is used. Used. Therefore, the polyimide in the polyimide film contains at least one of a structural unit derived from pyromellitic dianhydride and a structural unit derived from 3,3 ′, 4,4′-biphenyltetracarboxylic acid dianhydride. There is.
また、これらの酸無水物に限定されず、ポリアミド酸の原料となるテトラカルボン酸二無水物として、例えば4,4’-オキシジフタル酸二無水物(ODPA)、3,3’,4,4’-ベンゾフェノンテトラカルボン酸二無水物(BTDA)、3,3’,4,4’-ジフェニルスルホンテトラカルボン酸二無水物、ビシクロ[2.2.2]オクト-7-エン-2,3,5,6-テトラカルボン酸二無水物、1,2,4,5-シクロヘキサンテトラカルボン酸二無水物、2,2-ビス(3,4-ジカルボンキシフェニル)ヘキサフルオロプロパン二無水物、5-(2,5-ジオキソテトラヒドロフリル)-3-メチル-3-シクロヘキセン-1,2-ジカルボン酸二無水物等の酸無水物が用いられてもよい。 Moreover, it is not limited to these acid anhydrides, For example, 4,4'- oxydiphthalic acid dianhydride (ODPA), 3,3 ', 4,4' as tetracarboxylic dianhydride used as the raw material of a polyamic acid -Benzophenone tetracarboxylic acid dianhydride (BTDA), 3,3 ', 4,4'-diphenyl sulfone tetracarboxylic acid dianhydride, bicyclo [2.2.2] oct-7-ene-2,3,5 1,6-tetracarboxylic acid dianhydride, 1,2,4,5-cyclohexanetetracarboxylic acid dianhydride, 2,2-bis (3,4-dicarboxylicoxyphenyl) hexafluoropropane dianhydride, 5- (5 Acid anhydrides such as 2,5-dioxotetrahydrofuryl) -3-methyl-3-cyclohexene-1,2-dicarboxylic acid dianhydride may be used.
ポリアミド酸の原料となるジアミンとしては、4,4’-ジアミノジフェニルエーテル(ODA)及び4,4’-ビス(4-アミノフェノキシ)ビフェニル(BAPB)の少なくともいずれかが用いられる。したがって、ポリイミド皮膜中のポリイミドは、4,4’-ジアミノジフェニルエーテルに由来する構造単位及び4,4’-ビス(4-アミノフェノキシ)ビフェニルに由来する構造単位の少なくともいずれかを含んでいる。 At least one of 4,4'-diaminodiphenyl ether (ODA) and 4,4'-bis (4-aminophenoxy) biphenyl (BAPB) is used as a diamine which is a raw material of polyamic acid. Therefore, the polyimide in the polyimide film contains at least one of structural units derived from 4,4'-diaminodiphenyl ether and structural units derived from 4,4'-bis (4-aminophenoxy) biphenyl.
また、これらのジアミンに限定されず、ポリアミド酸の原料となるジアミンとして、例えば4,4’-メチレンジアニリン(MDA)、2,2-ビス[4-(アミノフェノキシ)フェニル]プロパン(BAPP)、1,4-ビス(4-アミノフェノキシ)ベンゼン(TPE-Q)、1,3-ビス(4-アミノフェノキシ)ベンゼン(TPE-R)、1,1-ビス[4-(4-アミノフェノキシ)フェニル]シクロヘキサン(4-APBZ)、1,3-ビス(3-アミノフェノキシ)ベンゼン(3-APB)、1,5-ビス(3-アミノフェノキシ)ナフタレン(1,5-BAPN)等のジアミンが用いられてもよい。 Moreover, it is not limited to these diamines, For example, 4,4'- methylenedianiline (MDA), 2, 2-bis [4- (amino phenoxy) phenyl] propane (BAPP) as a diamine used as the raw material of a polyamic acid 1,4-bis (4-aminophenoxy) benzene (TPE-Q), 1,3-bis (4-aminophenoxy) benzene (TPE-R), 1,1-bis [4- (4-aminophenoxy) ) Diamines such as phenyl] cyclohexane (4-APBZ), 1,3-bis (3-aminophenoxy) benzene (3-APB), 1,5-bis (3-aminophenoxy) naphthalene (1,5-BAPN) May be used.
ポリイミド皮膜形成用のワニスに含まれる溶剤としては、例えばN-メチルピロリドン(NMP)、N-エチルピロリドン(NEP)、N,N-ジメチルホルムアミド(DMF)、N,N-ジメチルアセトアミド(DMAc)、モノメチルホルムアルデヒド(NMF)、β-アルコキシプロピオンアミド、3-メトキシ-N,N-ジメチルプロパンアミド、ジメチルスルホキシド(DMSO)、γ-ブチロラクトン(γ-BL)等の非プロトン性極性溶媒の中から2種類以上が組み合わせて用いられる。 Examples of the solvent contained in the varnish for forming a polyimide film include N-methylpyrrolidone (NMP), N-ethylpyrrolidone (NEP), N, N-dimethylformamide (DMF), N, N-dimethylacetamide (DMAc), Two types of aprotic polar solvents such as monomethylformaldehyde (NMF), β-alkoxypropionamide, 3-methoxy-N, N-dimethylpropanamide, dimethylsulfoxide (DMSO), and γ-butyrolactone (γ-BL) The above is used in combination.
ポリイミド皮膜には、焼き付けにより揮発しなかった溶剤が残留する。すなわち、ポリイミド皮膜は、沸点の異なる少なくとも2種類以上の残留溶剤を含有する。 The solvent which has not volatilized by baking remains on the polyimide film. That is, the polyimide film contains at least two or more kinds of residual solvents having different boiling points.
ポリイミド皮膜に対する残留溶剤それぞれの含有量の下限としては、0.001質量%が好ましく、0.003質量%がより好ましく、0.005質量%がさらに好ましい。一方、上記含有量の上限は、0.1質量%未満であると好ましく、0.08質量%未満であるとより好ましく、0.07質量%未満であるとさらに好ましい。上記含有量が上記下限未満であると、ポリイミド皮膜の表面が平滑に形成されないおそれがある。逆に、上記含有量が上記上限以上であると、ポリイミド皮膜の誘電率が高くなり、ポリイミド皮膜の絶縁性が低下するおそれがある。なお、絶縁層に対する残留溶剤それぞれの含有量は、ポリイミド皮膜に対する残留溶剤と同じである。 As a minimum of content of each residual solvent to polyimide membrane, 0.001 mass% is preferred, 0.003 mass% is more preferred, and 0.005 mass% is more preferred. On the other hand, the upper limit of the content is preferably less than 0.1% by mass, more preferably less than 0.08% by mass, and still more preferably less than 0.07% by mass. If the content is less than the above lower limit, the surface of the polyimide film may not be formed smooth. On the other hand, when the content is equal to or more than the upper limit, the dielectric constant of the polyimide film may be increased, and the insulation of the polyimide film may be reduced. The content of each of the residual solvents in the insulating layer is the same as the residual solvent in the polyimide film.
ポリイミド皮膜に対する2種類以上の残留溶剤の合計含有量の下限としては、0.002質量%が好ましく、0.01質量%がより好ましく、0.02質量%がさらに好ましい。一方、上記含有量の上限としては、0.1質量%が好ましく、0.09質量%がより好ましく、0.08質量%がさらに好ましい。上記含有量が上記下限未満であると、ポリイミド皮膜の表面が平滑に形成されないおそれがあるとともに、ポリイミド皮膜と他の絶縁皮膜形成用のワニスとの親和性が十分に向上しないおそれがある。逆に、上記含有量が上記上限を超えると、ポリイミド皮膜の誘電率が高くなり、ポリイミド皮膜の絶縁性が低下するおそれがある。なお、絶縁層に対する2種類以上の残留溶剤の合計含有量は、ポリイミド皮膜に対する2種類以上の残留溶剤の合計含有量と同じである。 The lower limit of the total content of the two or more types of residual solvents relative to the polyimide film is preferably 0.002% by mass, more preferably 0.01% by mass, and still more preferably 0.02% by mass. On the other hand, the upper limit of the content is preferably 0.1% by mass, more preferably 0.09% by mass, and still more preferably 0.08% by mass. When the content is less than the above lower limit, the surface of the polyimide film may not be formed smooth, and the affinity between the polyimide film and the varnish for forming the insulating film may not be sufficiently improved. On the other hand, when the content exceeds the upper limit, the dielectric constant of the polyimide film may be increased, and the insulation of the polyimide film may be reduced. The total content of the two or more types of residual solvents in the insulating layer is the same as the total content of the two or more types of residual solvents in the polyimide film.
(利点)
当該絶縁電線1は、積層構造を形成する絶縁皮膜3a、絶縁皮膜3b及び絶縁皮膜3cがポリイミド皮膜であり、このポリイミド皮膜が、ポリイミドを主成分とし、沸点の異なる2種類以上の残留溶剤を含有している。このため、当該絶縁電線1は、ポリイミド皮膜を形成する際のポリイミド皮膜形成用のワニスの急激な乾燥を抑制し、ポリイミド皮膜の表面の平滑化を促す。また、当該絶縁電線1は、ポリイミド皮膜に適切な量の2種類以上の残留溶剤を含有しているので、ポリイミド皮膜と他の絶縁皮膜形成用のワニスとの親和性を向上させる。したがって、当該絶縁電線1は、絶縁層3を形成する絶縁皮膜間の密着力を向上させることができる。
(advantage)
In the insulated wire 1, the insulating film 3a, the insulating
また、当該絶縁電線1は、ポリイミド皮膜中のポリイミドが、ピロメリット酸二無水物に由来する構造単位及び3,3’,4,4’-ビフェニルテトラカルボン酸二無水物に由来する構造単位の少なくともいずれかを含み、かつ4,4’-ジアミノジフェニルエーテルに由来する構造単位及び4,4’-ビス(4-アミノフェノキシ)ビフェニルに由来する構造単位の少なくともいずれかを含むので、絶縁層3を形成するポリイミド皮膜の耐熱性を向上させることができる。
In the insulated wire 1, the polyimide in the polyimide film is a structural unit derived from pyromellitic dianhydride and a structural unit derived from 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride. Since the insulating
[他の実施形態]
今回開示された実施の形態はすべての点で例示であって制限的なものではないと考えられるべきである。本開示の範囲は、上記実施形態の構成に限定されるものではなく、請求の範囲によって示され、請求の範囲と均等の意味及び範囲内での全ての変更が含まれることが意図される。
[Other embodiments]
It should be understood that the embodiments disclosed herein are illustrative and non-restrictive in every respect. The scope of the present disclosure is not limited to the configurations of the above embodiments, but is indicated by the claims, and is intended to include all modifications within the meaning and scope equivalent to the claims.
上記実施形態では、絶縁電線1が金属導体2及び絶縁層3間に中間絶縁層4を備えているものについて説明したが、絶縁電線1は中間絶縁層4を備えていなくてもよい。すなわち、絶縁電線1は、線状の金属導体2と、この金属導体2の外周面に直接積層される絶縁層3とを備えているものであってもよい。
Although the said embodiment demonstrated the thing in which the insulated wire 1 was equipped with the intermediate |
上記実施形態では、ポリイミド皮膜が、沸点の異なる2種類以上の残留溶剤を含有しているものについて説明したが、ポリイミド皮膜が、沸点の異なる3種類以上の残留溶剤を含有していてもよい。この場合、ポリイミド皮膜が含有する3種類以上の残留溶剤の中から選択される2種類以上の残留溶剤それぞれの含有量が、0.001質量%以上0.1質量%未満であり、ポリイミド皮膜が含有する全ての残留溶剤の合計含有量が、0.002質量%以上0.1質量%以下であればよい。 In the above embodiment, although the polyimide film has been described as containing two or more types of residual solvents having different boiling points, the polyimide film may contain three or more types of residual solvents having different boiling points. In this case, the content of each of the two or more types of residual solvents selected from the three or more types of residual solvents contained in the polyimide film is 0.001% by mass or more and less than 0.1% by mass, and the polyimide film is The total content of all residual solvents contained may be 0.002% by mass or more and 0.1% by mass or less.
以下、実施例によって本発明をさらに具体的に説明するが、本発明は以下の実施例に限定されるものではない。 Hereinafter, the present invention will be more specifically described by way of examples, but the present invention is not limited to the following examples.
[No.1~No.15のポリイミド皮膜形成用ワニスの調製]
ポリイミド皮膜形成用ワニスは、以下のテトラカルボン酸二無水物、ジアミン及び溶剤を用いて調製した。ポリイミド皮膜形成用ワニスは、ポリアミド酸の原料となるテトラカルボン酸二無水物及びジアミンを等モル比で溶剤中に溶解させた後、テトラカルボン酸二無水物及びジアミンの縮合重合反応を促進することにより得た。原料となるテトラカルボン酸二無水物の組成及びジアミンの組成と使用した溶剤の組成とを表1に示す。なお、表1では、テトラカルボン酸二無水物の組成比及びジアミンの組成比をモル比で示し、溶剤の組成比を質量比で示している。
[No. 1 to No. Preparation of varnish for forming a polyimide film of 15]
The varnish for polyimide film formation was prepared using the following tetracarboxylic acid dianhydride, diamine and a solvent. A varnish for forming a polyimide film is to promote the condensation polymerization reaction of tetracarboxylic acid dianhydride and diamine after dissolving tetracarboxylic acid dianhydride and diamine as raw materials of polyamic acid in a solvent in an equimolar ratio. Obtained by The composition of the tetracarboxylic acid dianhydride as the raw material, the composition of the diamine and the composition of the solvent used are shown in Table 1. In Table 1, the composition ratio of tetracarboxylic dianhydride and the composition ratio of diamine are shown by molar ratio, and the composition ratio of the solvent is shown by mass ratio.
(テトラカルボン酸二無水物)
ポリアミド酸の原料となるテトラカルボン酸二無水物としては、ピロメリット酸二無水物及び3,3’,4,4’-ビフェニルテトラカルボン酸二無水物を用いた。なお、表1ではこれらの酸無水物をPMDA及びBPDAとそれぞれ表示し、これらの合計が100となるように組成比を示している。
(Tetracarboxylic acid dianhydride)
As a tetracarboxylic acid dianhydride used as a raw material of a polyamic acid, pyromellitic dianhydride and 3,3 ', 4,4'-biphenyltetracarboxylic acid dianhydride were used. In Table 1, these acid anhydrides are denoted as PMDA and BPDA, respectively, and the composition ratios are shown such that the total of these is 100.
(ジアミン)
ポリアミド酸の原料となるジアミンとしては、4,4’-ジアミノジフェニルエーテル及び4,4’-ビス(4-アミノフェノキシ)ビフェニルを用いた。なお、表1ではこれらのジアミンをODA及びBAPBとそれぞれ表示し、これらの合計が100となるように組成比を示している。
(Diamine)
4,4'-Diaminodiphenyl ether and 4,4'-bis (4-aminophenoxy) biphenyl were used as diamines to be a raw material of the polyamic acid. In addition, in Table 1, these diamine is each displayed as ODA and BAPB, and the composition ratio is shown so that the sum total of these may be set to 100.
(溶剤)
溶剤としては、三菱ケミカル株式会社の「NMP」(N-メチルピロリドン、沸点202℃)、三菱ガス化学株式会社の「NMF」(モノメチルホルムアルデヒド、沸点199℃)、三菱ガス化学株式会社の「DMAC」(N,N-ジメチルアセトアミド、沸点165℃)、東京化成工業株式会社の「D0722」(N,N-ジメチルホルムアミド、沸点153℃)、出光興産株式会社の「エクアミドM100」(β-アルコキシプロピオンアミド、沸点216℃)、東京化成工業株式会社の「E0358」(N-エチルピロリドン、沸点218℃)及び三菱ケミカル株式会社の「GBL」(γ-ブチロラクトン、沸点204℃)を用いた。なお、表1ではこれらをNMP、NMF、DMAc、DMF、M100、NEP及びγ-BLとそれぞれ表示し、これらの合計が100となるように組成比を示している。
(solvent)
As the solvent, “NMP” (N-methyl pyrrolidone, boiling point 202 ° C.) of Mitsubishi Chemical Corporation, “NMF” (monomethyl formaldehyde, boiling point 199 ° C.) of Mitsubishi Gas Chemical Co., Ltd., “DMAC” of Mitsubishi Gas Chemical Co., Ltd. (N, N-dimethylacetamide, boiling point 165 ° C.), Tokyo Chemical Industry Co., Ltd. “D0722” (N, N-dimethylformamide, boiling point 153 ° C.), Idemitsu Kosan Co., Ltd. “Equamide M100” (β-alkoxypropionamide) Boiling point 216 ° C.), “E0358” (N-ethyl pyrrolidone, boiling point 218 ° C.) of Tokyo Chemical Industry Co., Ltd., and “GBL” (γ-butyrolactone, boiling point 204 ° C.) of Mitsubishi Chemical Co., Ltd. were used. In Table 1, these are indicated as NMP, NMF, DMAc, DMF, M100, NEP and γ-BL, respectively, and the composition ratios are shown such that the total of these is 100.
[No.1~No.15の絶縁電線の試験]
No.1~No.15のポリイミド皮膜形成用ワニスを直径1.0mmの銅線の外周面に塗布した後、焼き付けによって大部分の溶剤を揮発させるとともに溶剤中のポリアミド酸をイミド化して平均厚さ3μmのポリイミド皮膜を形成した。そして、このポリイミド皮膜形成用ワニスの塗布及び焼き付けを20回繰り返して平均厚さ60μmの絶縁層を形成し、No.1~No.15の絶縁電線を作製した。この絶縁電線について、ポリイミド皮膜に対する残留溶剤それぞれの含有量と絶縁層の比誘電率とを測定した。また、この絶縁電線について剥離試験を行った。これらの測定結果及び試験結果を表2に示す。
[No. 1 to No. Test of 15 Insulated Wires]
No. 1 to No. After applying a varnish for forming a polyimide film on the outer surface of a copper wire of 1.0 mm in diameter, most of the solvent is evaporated by baking and the polyamic acid in the solvent is imidized to form a polyimide film having an average thickness of 3 μm. It formed. Then, the application and baking of the varnish for forming a polyimide film were repeated 20 times to form an insulating layer having an average thickness of 60 μm. 1 to No. Fifteen insulated wires were produced. With respect to this insulated wire, the content of each of the residual solvents for the polyimide film and the relative dielectric constant of the insulating layer were measured. Moreover, the peeling test was done about this insulated wire. The measurement results and the test results are shown in Table 2.
(残留溶剤の含有量の測定)
ポリイミド皮膜に対する残留溶剤の含有量は、ガスクロマトグラフ法により測定した。
(Measurement of residual solvent content)
The content of the residual solvent with respect to the polyimide film was measured by gas chromatography.
(比誘電率の測定)
絶縁層の比誘電率の測定は、絶縁電線の表面の3か所に銀ペーストを塗布した後、常温下においてこの銀ペーストと銅線との間の静電容量をLCRメータで測定し、測定した静電容量の値と絶縁層の厚みから比誘電率を算出した。
(Measurement of dielectric constant)
The measurement of the relative permittivity of the insulating layer is performed by applying silver paste to three places on the surface of the insulated wire, and then measuring the capacitance between the silver paste and the copper wire with an LCR meter at normal temperature. The relative dielectric constant was calculated from the value of the capacitance and the thickness of the insulating layer.
(剥離試験)
剥離試験は、絶縁電線を長手方向に20%予備伸張した後、この絶縁電線と同じ直径を有する鉄芯の周りに絶縁電線を30回巻き付けて、絶縁層に割れや剥離が発生するか否かを確認する手法を採用した。なお、表2では、絶縁層に割れや剥離が発生しなかったものをAとし、絶縁層に割れや剥離が発生したものをBとしている。
(Peeling test)
In the peeling test, after prestretching the insulated wire by 20% in the longitudinal direction, the insulated wire is wound 30 times around an iron core having the same diameter as the insulated wire, and whether cracking or peeling occurs in the insulating layer Adopted a method to confirm the In Table 2, A indicates that cracking or peeling did not occur in the insulating layer, and B indicates that cracking or peeling occurred in the insulating layer.
No.1~No.12の絶縁電線は、表2に示すように、絶縁層を形成するポリイミド皮膜が2種類又は3種類の残留溶剤を含有する例であり、ポリイミド皮膜に対する残留溶剤それぞれの含有量が0.001質量%以上0.1質量%未満であり、ポリイミド皮膜に対する残留溶剤の合計含有量が、0.002質量%以上0.1質量%以下である。No.1~No.12の絶縁電線は、絶縁層の比誘電率が3.2以上3.3以下でありかつ剥離試験においても絶縁層に割れや剥離が発生しないことが確認された。つまり、No.1~No.12の絶縁電線は、絶縁層の誘電率が低く、絶縁層を形成するポリイミド皮膜間の密着力が高いといえる。 No. 1 to No. As shown in Table 2, the 12 insulated wires are examples in which the polyimide film forming the insulating layer contains two or three types of residual solvents, and the content of each residual solvent to the polyimide film is 0.001 mass. % Or more and less than 0.1% by mass, and the total content of the residual solvent to the polyimide film is 0.002% by mass or more and 0.1% by mass or less. No. 1 to No. In the 12 insulated wires, it was confirmed that the relative dielectric constant of the insulating layer is 3.2 or more and 3.3 or less and that cracking or peeling does not occur in the insulating layer even in the peeling test. That is, no. 1 to No. In the 12 insulated wires, the dielectric constant of the insulating layer is low, and it can be said that the adhesion between the polyimide films forming the insulating layer is high.
No.13~No.14の絶縁電線は、絶縁層を形成するポリイミド皮膜が1種類の残留溶剤のみを含有する例である。No.13~No.14の絶縁電線は、剥離試験においても絶縁層に割れや剥離が発生することが確認された。つまり、No.13~No.14の絶縁電線は、絶縁層を形成するポリイミド皮膜間の密着力が十分でないといえる。 No. 13 to No. The insulated wire of 14 is an example in which the polyimide film forming the insulating layer contains only one type of residual solvent. No. 13 to No. In the insulated wire of No. 14, it was confirmed that cracking and peeling occur in the insulating layer also in the peeling test. That is, no. 13 to No. In the 14 insulated wires, it can be said that the adhesion between the polyimide films forming the insulating layer is not sufficient.
No.15の絶縁電線は、絶縁層を形成するポリイミド皮膜が1種類の残留溶剤のみを含有する例であり、かつポリイミド皮膜に対する残留溶剤の含有量が0.1質量%以上の例である。No.15の絶縁電線は、絶縁層の比誘電率が3.6であり、絶縁層の誘電率が高いといえる。 No. The insulated wire of No. 15 is an example in which the polyimide film forming the insulating layer contains only one type of residual solvent, and is an example in which the content of the residual solvent with respect to the polyimide film is 0.1% by mass or more. No. In the 15 insulated wires, the dielectric constant of the insulating layer is 3.6, and it can be said that the dielectric constant of the insulating layer is high.
1 絶縁電線
2 金属導体
3 絶縁層
3a,3b,3c 絶縁皮膜
4 中間絶縁層
1
Claims (8)
上記絶縁層が、2以上の絶縁皮膜の積層構造を有し、
上記2以上の絶縁皮膜の少なくとも1つが、ポリイミドを主成分とするポリイミド皮膜であり、
上記絶縁層が、沸点の異なる2種類以上の残留溶剤を含有する絶縁電線。 An insulated wire comprising: a linear metal conductor; and an insulating layer laminated on the outer peripheral surface side of the metal conductor,
The insulating layer has a laminated structure of two or more insulating films,
At least one of the two or more insulating films is a polyimide film containing polyimide as a main component,
An insulated wire wherein the insulating layer contains two or more kinds of residual solvents having different boiling points.
上記絶縁層に対する上記2種類以上の残留溶剤の合計含有量が、0.002質量%以上0.1質量%以下である請求項1に記載の絶縁電線。 Each content of the said residual solvent with respect to the said insulating layer is 0.001 mass% or more and less than 0.1 mass%,
The insulated wire according to claim 1, wherein a total content of the two or more types of residual solvents with respect to the insulating layer is 0.002% by mass or more and 0.1% by mass or less.
上記中間絶縁層が、熱硬化性樹脂、熱可塑性樹脂又はこれらの混合物を主成分とする樹脂組成物から形成されている請求項1から請求項4のいずれか1項に記載の絶縁電線。 It comprises an intermediate insulating layer laminated between the metal conductor and the insulating layer,
The insulated wire according to any one of claims 1 to 4, wherein the intermediate insulating layer is formed of a resin composition containing a thermosetting resin, a thermoplastic resin, or a mixture thereof as a main component.
上記絶縁層が、2以上の絶縁皮膜の積層構造を有し、
上記2以上の絶縁皮膜の少なくとも1つが、ポリイミドを主成分とするポリイミド皮膜であり、
上記絶縁層が、沸点の異なる2種類以上の残留溶剤を含有しており、
上記絶縁層に対する上記残留溶剤それぞれの含有量が、0.001質量%以上0.1質量%未満であり、
上記絶縁層に対する上記2種類以上の残留溶剤の合計含有量が、0.002質量%以上0.1質量%以下であり、
上記ポリイミド皮膜中の上記ポリイミドが、ピロメリット酸二無水物に由来する構造単位及び3,3’,4,4’-ビフェニルテトラカルボン酸二無水物に由来する構造単位の少なくともいずれかを含んでおり、
上記ポリイミド皮膜中の上記ポリイミドが、4,4’-ジアミノジフェニルエーテルに由来する構造単位及び4,4’-ビス(4-アミノフェノキシ)ビフェニルに由来する構造単位の少なくともいずれかを含む絶縁電線。 An insulated wire comprising: a linear metal conductor; and an insulating layer laminated on the outer peripheral surface side of the metal conductor,
The insulating layer has a laminated structure of two or more insulating films,
At least one of the two or more insulating films is a polyimide film containing polyimide as a main component,
The insulating layer contains two or more residual solvents having different boiling points,
Each content of the said residual solvent with respect to the said insulating layer is 0.001 mass% or more and less than 0.1 mass%,
The total content of the two or more types of residual solvents in the insulating layer is 0.002% by mass or more and 0.1% by mass or less,
The polyimide in the polyimide film contains at least one of a structural unit derived from pyromellitic dianhydride and a structural unit derived from 3,3 ′, 4,4′-biphenyltetracarboxylic acid dianhydride Yes,
An insulated wire comprising at least one of a structural unit derived from 4,4'-diaminodiphenyl ether and a structural unit derived from 4,4'-bis (4-aminophenoxy) biphenyl in the polyimide film.
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| CN201880012123.3A CN110301015B (en) | 2017-11-27 | 2018-10-29 | Insulated wire |
| JP2019514141A JP7107921B2 (en) | 2017-11-27 | 2018-10-29 | insulated wire |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012234625A (en) * | 2011-04-28 | 2012-11-29 | Sumitomo Electric Wintec Inc | Insulated wire and electric coil and motor using the same |
| WO2013073397A1 (en) * | 2011-11-16 | 2013-05-23 | 住友電気工業株式会社 | Insulating varnish and insulated electrical wire using same |
| WO2015105095A1 (en) * | 2014-01-10 | 2015-07-16 | 古河電気工業株式会社 | Insulated electric wire, coil and electric/electronic device, and cracking prevention method for insulated electric wire |
| JP2015209457A (en) * | 2014-04-24 | 2015-11-24 | 日立金属株式会社 | Polyamic acid paint and insulated wire |
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| JP5486646B2 (en) * | 2012-07-20 | 2014-05-07 | 株式会社デンソー | Insulated wire |
| WO2015198491A1 (en) * | 2014-06-27 | 2015-12-30 | 日立金属株式会社 | Insulated electric wire and coil |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012234625A (en) * | 2011-04-28 | 2012-11-29 | Sumitomo Electric Wintec Inc | Insulated wire and electric coil and motor using the same |
| WO2013073397A1 (en) * | 2011-11-16 | 2013-05-23 | 住友電気工業株式会社 | Insulating varnish and insulated electrical wire using same |
| WO2015105095A1 (en) * | 2014-01-10 | 2015-07-16 | 古河電気工業株式会社 | Insulated electric wire, coil and electric/electronic device, and cracking prevention method for insulated electric wire |
| JP2015209457A (en) * | 2014-04-24 | 2015-11-24 | 日立金属株式会社 | Polyamic acid paint and insulated wire |
Also Published As
| Publication number | Publication date |
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| CN110301015B (en) | 2021-03-12 |
| JPWO2019102800A1 (en) | 2020-10-01 |
| CN110301015A (en) | 2019-10-01 |
| JP7107921B2 (en) | 2022-07-27 |
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