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WO2019193693A1 - Liquide de polissage et procédé de polissage - Google Patents

Liquide de polissage et procédé de polissage Download PDF

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Publication number
WO2019193693A1
WO2019193693A1 PCT/JP2018/014459 JP2018014459W WO2019193693A1 WO 2019193693 A1 WO2019193693 A1 WO 2019193693A1 JP 2018014459 W JP2018014459 W JP 2018014459W WO 2019193693 A1 WO2019193693 A1 WO 2019193693A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
polishing liquid
liquid according
abrasive grains
cerium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/014459
Other languages
English (en)
Japanese (ja)
Inventor
山下　貴司
野村　理行
久貴 南
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to PCT/JP2018/014459 priority Critical patent/WO2019193693A1/fr
Publication of WO2019193693A1 publication Critical patent/WO2019193693A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention provides, as a second aspect, a polishing method for polishing silicon nitride using the above polishing liquid.
  • a polishing liquid capable of obtaining an excellent polishing rate of silicon nitride can be provided.
  • a polishing method capable of polishing silicon nitride at an excellent polishing rate can be provided.
  • a numerical range indicated by using “to” indicates a range including the numerical values described before and after “to” as the minimum value and the maximum value, respectively.
  • the upper limit value or lower limit value of a numerical range of a certain step can be arbitrarily combined with the upper limit value or lower limit value of the numerical range of another step.
  • the upper limit value or the lower limit value of the numerical range may be replaced with the values shown in the examples. “A or B” only needs to include either A or B, and may include both.
  • the materials exemplified in this specification can be used singly or in combination of two or more unless otherwise specified.
  • the polishing liquid according to this embodiment is a polishing liquid used for polishing silicon nitride, and contains abrasive grains containing cerium oxide and a liquid medium, and the cerium oxide has a larger ionic radius than cerium. Element (hereinafter also referred to as “element A” in some cases).
  • the polishing liquid according to this embodiment can be used as a CMP polishing liquid.
  • the present inventor presumes an example of the reason as follows. That is, when the cerium oxide in the abrasive grains contains the element A, oxygen deficiency of cerium oxide occurs. As a result, the proportion of trivalent cerium atoms in the abrasive grains increases and the electron donating property increases, so that the abrasive grains easily donate electrons to the surface to be polished containing silicon nitride. As a result, the chemical bond between the nitrogen atom and the silicon atom in the silicon nitride is weakened, so that the silicon nitride is easily polished.
  • the content of element A in the abrasive grains is preferably in the following range based on the total amount of abrasive grains (total amount of one abrasive grain or total amount of abrasive grains contained in the polishing liquid).
  • the content of element A is preferably 0.001 mol% or more, more preferably 0.1 mol% or more, and further preferably 1 mol%, from the viewpoint of easily obtaining an excellent polishing rate of silicon nitride. That's it.
  • the content of the element A is preferably 50 mol% or less, more preferably 45 mol% or less, and still more preferably 40 mol% or less from the viewpoint of easily obtaining an excellent polishing rate of silicon nitride. From these viewpoints, the content of the element A is preferably 0.001 to 50 mol%, more preferably 0.1 to 45 mol%, still more preferably 0.1 to 40 mol%, Particularly preferred is 1 to 40 mol%.
  • the content of element A relative to the total of cerium and element A is preferably in the following range.
  • the content of element A is preferably 5 mol% or more, more than 5 mol%, more than 10 mol%, more than 10 mol%, more than 15 mol%, from the viewpoint of easily obtaining an excellent polishing rate of silicon nitride. , More than 15 mol%, more than 20 mol%, more than 20 mol%, more than 25 mol%, or more than 25 mol%.
  • the content of the element A is preferably 50 mol% or less, less than 50 mol%, less than 45 mol%, less than 45 mol%, less than 40 mol%, 40 mol% or less, from the viewpoint of easily obtaining an excellent polishing rate of silicon nitride. It is less than mol%, less than 35 mol%, less than 35 mol%, or less than 30 mol%. From these viewpoints, the content of the element A is preferably 5 to 50 mol%, 10 to 40 mol%, 20 to 40 mol%, or 30 to 40 mol%.
  • the contents of cerium and element A can be measured, for example, by inductively coupled plasma mass spectrometry (ICP mass spectrometry).
  • the abrasive is a compound containing at least one selected from the group consisting of cerium and element A, nitrate, ammonium nitrate, sulfate, ammonium sulfate, acetate, oxalate, carbonate, chloride, acetyl acetate salt Cerium oxide obtained using at least one selected from the group consisting of alkoxides and hydroxides, nitrates, ammonium nitrates, sulfates, ammonium sulfates, acetates, oxalates, carbonates And cerium oxide derived from at least one selected from the group consisting of chloride, acetyl acetate salt, alkoxide and hydroxide.
  • abrasive grains for example, it can be obtained by oxidizing a mixture containing cerium and element A. That is, the abrasive is a compound containing at least one selected from the group consisting of cerium and element A, nitrate, ammonium nitrate, sulfate, ammonium sulfate, acetate, oxalate, carbonate, chloride, acetyl acetate salt
  • cerium oxide obtained by oxidizing at least one selected from the group consisting of alkoxides and hydroxides can be contained, and cerium oxide which is an oxide of these compounds can be contained.
  • the mixture can be obtained by mixing a cerium compound (cerium carbonate, cerium nitrate, etc.) and a compound containing element A (lanthanum nitrate, etc.).
  • the mixture may be fired and oxidized, or the mixture may be oxidized with hydrogen peroxide or the like.
  • a method of baking Methods, such as a sintering method using a rotary kiln, an electric furnace, etc., can be used.
  • the firing temperature is preferably 350 to 900 ° C.
  • the aggregated particles may be mechanically pulverized.
  • the pulverization method include a dry pulverization method using a jet mill or the like (see, for example, “Chemical Engineering Papers”, Vol. It is done.
  • the abrasive preferably has a positive (greater than 0 mV) zeta potential from the viewpoint of easily obtaining an excellent polishing rate of silicon nitride because the abrasive tends to come into contact with silicon nitride that tends to have a negative potential.
  • the polishing liquid according to this embodiment preferably contains cationic abrasive grains.
  • the zeta potential of the abrasive is preferably 20 mV or more, more preferably 30 mV or more, still more preferably 40 mV or more, and particularly preferably 50 mV or more from the viewpoint of easily obtaining an excellent polishing rate of silicon nitride. is there.
  • the zeta potential ( ⁇ [mV]) can be measured using a zeta potential measuring device (for example, Delsa Nano C (device name) manufactured by Beckman Coulter, Inc.).
  • the zeta potential of the abrasive grains in the polishing liquid can be obtained by, for example, putting the polishing liquid in a concentrated cell unit (cell for high concentration sample) for the zeta potential measuring device.
  • the average particle diameter of the abrasive grains is preferably 300 nm or less, more preferably 280 nm or less, still more preferably 250 nm or less, and particularly preferably 200 nm or less, from the viewpoint that polishing scratches are less likely to occur.
  • the average grain size of the abrasive grains is preferably 50 nm or more, more preferably 70 nm or more, still more preferably 80 nm or more, and particularly preferably 100 nm or more from the viewpoint of easily obtaining an excellent polishing rate of silicon nitride. It is. From these viewpoints, the average grain size of the abrasive grains is preferably 50 to 300 nm.
  • the “average particle diameter” is the median value of the volume distribution obtained by directly measuring the polishing liquid with a laser diffraction particle size distribution meter.
  • the average particle diameter (D50) can be obtained using “Microtrac MT3300EXII” manufactured by Microtrack Bell Co., Ltd.
  • the average particle diameter can be controlled by the abrasive production conditions, classification conditions, and the like.
  • the average particle size is the particle size of the abrasive grains contained in the polishing liquid, and can also be adjusted by the type or amount of additives, pH of the polishing liquid, and the like described later.
  • the content of abrasive grains is preferably in the following range based on the total amount of polishing liquid.
  • the content of the abrasive is preferably 10% by mass or less, more preferably 8% by mass or less, still more preferably 6% by mass or less, and particularly preferably 5% by mass from the viewpoint of preventing the particles from aggregating. Or less, very preferably 4% by mass or less, very preferably 2% by mass or less, and even more preferably 1% by mass or less.
  • the content of the abrasive grains is preferably 0.1% by mass or more, more preferably 0.2% by mass or more, and still more preferably 0.3% by mass from the viewpoint of easily obtaining an excellent polishing rate of silicon nitride. It is at least 0.5 mass%, particularly preferably at least 0.5 mass%. From these viewpoints, the abrasive content is preferably 0.1 to 10% by mass.
  • the polishing liquid according to this embodiment can contain additives other than abrasive grains and a liquid medium.
  • the additive include an organic acid component, a pH adjuster, a cationic surfactant, an anionic surfactant, a nonionic surfactant, an amphoteric surfactant, and a water-soluble polymer.
  • the polishing liquid according to this embodiment may contain ammonium polyacrylate as a dispersant or the like, but may not contain ammonium polyacrylate.
  • the content of ammonium polyacrylate in the polishing liquid according to the present embodiment is preferably 1 part by mass or less with respect to 100 parts by mass of abrasive grains, from the viewpoint that an excellent polishing rate of silicon nitride is easily obtained.
  • the amount is preferably less than 1 part by mass, more preferably 0.1 part by mass or less, particularly preferably 0.01 part by mass or less, and most preferably 0.001 part by mass or less.
  • the polishing liquid according to this embodiment can contain an organic acid component.
  • the organic acid component may be at least one selected from the group consisting of organic acids and organic acid salts.
  • the organic acid component may have a role as a dispersant, and the average particle size of the abrasive grains can be controlled by adding the organic acid component.
  • Examples of the organic acid component include monocarboxylic acids such as formic acid, acetic acid, propionic acid, butyric acid, acrylic acid, benzoic acid, and picolinic acid.
  • the organic acid component is preferably acetic acid from the viewpoint of easily obtaining an excellent polishing rate of silicon nitride.
  • the content of the organic acid component is preferably in the following range based on the total amount of the polishing liquid.
  • the content of the organic acid component is preferably 0.0005% by mass or more, more preferably 0.001% by mass or more, and further preferably 0.001% by mass or more, from the viewpoint of easily obtaining an excellent polishing rate of silicon nitride. It is 003 mass% or more, Most preferably, it is 0.005 mass% or more.
  • the content of the organic acid component is preferably 0.1% by mass or less, more preferably 0.05% by mass or less, and still more preferably 0.8% by mass from the viewpoint of easily obtaining an excellent polishing rate of silicon nitride. 01% by mass or less.
  • the content of the organic acid component is preferably 0.0005 to 0.1% by mass, more preferably 0.001 to 0.05% by mass, and still more preferably 0.003 to 0%. 0.01% by mass, particularly preferably 0.005 to 0.01% by mass.
  • the polishing liquid according to this embodiment can contain a pH adjuster.
  • a pH adjuster By using a pH adjuster, it is easy to obtain a desired pH of the polishing liquid.
  • the pH adjuster include inorganic acids and inorganic bases.
  • inorganic acids include nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, boric acid and the like.
  • examples of the inorganic base include sodium hydroxide, potassium hydroxide, calcium hydroxide, ammonia and the like. You may adjust pH using the above-mentioned organic acid component.
  • the object to be polished (base) 10 includes a first insulating material 1 having a groove on the surface, a barrier material 2 having a shape following the surface of the first insulating material 1, And a second insulating material 3 covering the entire barrier material 2 so as to fill the groove.
  • the polishing method of the object to be polished 10 includes a first polishing step (FIGS. 1A to 1B) for polishing the second insulating material 3 until the barrier material 2 is exposed, and a first insulating material.
  • a second polishing step (FIGS.
  • the Raman spectrum of the abrasive grains was measured based on Raman spectroscopy. As shown by the solid line in FIG. 2, a peak derived from oxygen deficiency of cerium oxide was confirmed in the Raman shift range of 500 to 650 cm ⁇ 1 in the Raman spectrum.
  • Example 5 A polishing liquid was prepared in the same manner as in Example 4 except that lanthanum was changed to gadolinium. Gadolinium nitrate was used as the gadolinium source.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention concerne un liquide de polissage qui est utilisé pour polir du nitrure de silicium, le liquide de polissage comprenant des grains abrasifs contenant de l'oxyde de cérium et un milieu liquide, l'oxyde de cérium contenant un élément qui a un rayon ionique supérieur à celui du cérium.
PCT/JP2018/014459 2018-04-04 2018-04-04 Liquide de polissage et procédé de polissage Ceased WO2019193693A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2018/014459 WO2019193693A1 (fr) 2018-04-04 2018-04-04 Liquide de polissage et procédé de polissage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2018/014459 WO2019193693A1 (fr) 2018-04-04 2018-04-04 Liquide de polissage et procédé de polissage

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WO2019193693A1 true WO2019193693A1 (fr) 2019-10-10

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220157327A (ko) * 2021-05-20 2022-11-29 주식회사 엠피에스피 연마용 세리아 입자 및 이를 포함하는 슬러리
JP2025060845A (ja) * 2020-08-31 2025-04-10 ソウルブレイン シーオー．， エルティーディー． 酸化セリウム粒子、これを含む化学的機械的研磨用スラリー組成物および半導体素子の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011510900A (ja) * 2008-02-08 2011-04-07 ユミコア ソシエテ アノニム 一定の形態を有するドープされたセリア研磨剤
JP2012503880A (ja) * 2008-09-26 2012-02-09 ローディア・オペラシオン 化学機械研磨用研磨剤組成物及びその使用法
JP2015034244A (ja) * 2013-08-09 2015-02-19 コニカミノルタ株式会社 Ｃｍｐ用研磨液
JP2015035522A (ja) * 2013-08-09 2015-02-19 コニカミノルタ株式会社 Ｃｍｐ用研磨液
JP2015034243A (ja) * 2013-08-09 2015-02-19 コニカミノルタ株式会社 Ｃｍｐ用研磨液

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011510900A (ja) * 2008-02-08 2011-04-07 ユミコア ソシエテ アノニム 一定の形態を有するドープされたセリア研磨剤
JP2012503880A (ja) * 2008-09-26 2012-02-09 ローディア・オペラシオン 化学機械研磨用研磨剤組成物及びその使用法
JP2015034244A (ja) * 2013-08-09 2015-02-19 コニカミノルタ株式会社 Ｃｍｐ用研磨液
JP2015035522A (ja) * 2013-08-09 2015-02-19 コニカミノルタ株式会社 Ｃｍｐ用研磨液
JP2015034243A (ja) * 2013-08-09 2015-02-19 コニカミノルタ株式会社 Ｃｍｐ用研磨液

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025060845A (ja) * 2020-08-31 2025-04-10 ソウルブレイン シーオー．， エルティーディー． 酸化セリウム粒子、これを含む化学的機械的研磨用スラリー組成物および半導体素子の製造方法
KR20220157327A (ko) * 2021-05-20 2022-11-29 주식회사 엠피에스피 연마용 세리아 입자 및 이를 포함하는 슬러리
KR102765948B1 (ko) 2021-05-20 2025-02-11 주식회사 한국나노오트 연마용 세리아 입자 및 이를 포함하는 슬러리

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