WO2019163340A1 - 放射冷却装置 - Google Patents
放射冷却装置 Download PDFInfo
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- WO2019163340A1 WO2019163340A1 PCT/JP2019/001338 JP2019001338W WO2019163340A1 WO 2019163340 A1 WO2019163340 A1 WO 2019163340A1 JP 2019001338 W JP2019001338 W JP 2019001338W WO 2019163340 A1 WO2019163340 A1 WO 2019163340A1
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- layer
- silver
- light
- cooling device
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
- F28F21/08—Constructions of heat-exchange apparatus characterised by the selection of particular materials of metal
- F28F21/081—Heat exchange elements made from metals or metal alloys
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F13/18—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/043—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/061—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of metal
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/26—Reflecting filters
Definitions
- the present invention provides a radiation in which an infrared radiation layer that radiates infrared light from a radiation surface and a light reflection layer that is positioned on the opposite side of the radiation surface on the side where the radiation surface is present are stacked.
- the present invention relates to a cooling device.
- Such a radiation cooling device transmits infrared light radiated from the radiation surface of the infrared radiation layer through an atmospheric window (for example, a window that transmits infrared light having a wavelength of 8 to 13 ⁇ m, etc.) to form a light reflection layer. It is used for cooling various cooling objects such as cooling the cooling object located on the side opposite to the side where the infrared radiation layer is present.
- an atmospheric window for example, a window that transmits infrared light having a wavelength of 8 to 13 ⁇ m, etc.
- the light reflecting layer reflects light (visible light, ultraviolet light, infrared light) transmitted through the infrared radiation layer and emits it from the radiation surface, thereby transmitting light (visible light, Ultraviolet light and infrared light) are projected onto the object to be cooled and the object to be cooled is prevented from being heated.
- the light reflection layer also has a function of reflecting infrared light radiated from the infrared radiation layer to the existence side of the light reflection layer toward the infrared radiation layer.
- the light reflection layer is provided to reflect light (visible light, ultraviolet light, infrared light) transmitted through the infrared radiation layer.
- the light reflection layer is a state in which a metal layer made of silver, a layer of titanium dioxide (TiO 2 ), and a layer of magnesium fluoride (MgF 2 ) are alternately arranged.
- a photoning band cap layer formed in a multilayer state in a state where the photoning band cap layer is positioned on the side close to the infrared radiation layer for example, Patent Document 1). reference.
- the light reflection layer is configured as a metal layer made of aluminum (for example, see Patent Document 2).
- a metal layer made of aluminum is used as a substrate, and an SiO layer and an MgO layer constituting an infrared radiation layer are laminated.
- the light reflecting layer is provided with the photoning band cap layer laminated in a multilayer state, so that there is a disadvantage that the manufacturing becomes complicated. Even if it is provided, the metal layer made of expensive silver cannot be made sufficiently thin, so there is a disadvantage that it is difficult to reduce the overall configuration.
- the light reflecting layer is configured as a metal layer made of aluminum
- the light reflecting layer is configured with inexpensive aluminum
- the overall configuration can be reduced. is there.
- the metal layer made of aluminum is easier to absorb light than silver
- the light transmitted through the infrared radiation layer is absorbed by the metal layer made of aluminum and the temperature rises due to the absorption of the light. Due to the metal layer heating the object to be cooled, there is a possibility that the object to be cooled cannot be appropriately cooled.
- the light reflecting layer is configured as a metal layer made of silver having a thickness of 100 nm or more
- the infrared radiation layer is transmitted.
- the cooling target can be cooled while suppressing the light from being projected onto the cooling target (see FIGS. 12 and 13), and the light reflecting layer is made of a metal made of silver having a thickness of 300 nm or more.
- the light to be transmitted through the infrared radiation layer can be appropriately suppressed from being projected onto the object to be cooled, and the object to be cooled can be appropriately cooled.
- the light reflection layer is configured as a metal layer made of silver having a thickness of 300 nm or more, the radiation cooling device becomes expensive. While suppressing, it was desired to cool the object to be cooled.
- the present invention has been made in view of the above circumstances, and its purpose is to appropriately cool the object to be cooled while reducing the cost of the light reflecting layer, and to provide a cooling action over a long period of time. It is in the point which provides the radiation cooling device which can demonstrate well.
- the radiant cooling device of the present invention includes an infrared radiation layer that radiates infrared light from a radiation surface, and a light reflection layer that is positioned on the opposite side of the radiation surface on the side where the radiation surface exists. It is provided and its characteristic configuration is
- the light reflecting layer includes a first layer made of silver or a silver alloy, a second layer made of aluminum or an aluminum alloy, and an alloying-preventing transparent layer for preventing alloying of silver and aluminum. In this case, the alloying-preventing transparent layer and the second layer are laminated in the order of being positioned on the side closer to the infrared radiation layer.
- the light reflecting layer is composed of a first layer made of silver or a silver alloy and a second layer made of aluminum or an aluminum alloy, and the first layer is close to an infrared radiation layer. It came to discover that it was possible to cool the object to be cooled while suppressing the amount of expensive silver or silver alloy used by forming a laminated state in a form positioned on the side.
- silver or a silver alloy can reflect visible light and infrared light efficiently, but tends to have a low reflectivity for ultraviolet light.
- aluminum or aluminum alloy cannot reflect visible light or infrared light more efficiently than silver or silver alloy, but tends to reflect ultraviolet light efficiently.
- aluminum or aluminum alloy tends to absorb visible light and infrared light more easily than silver or silver alloy.
- the first layer made of silver or a silver alloy and the second layer made of aluminum or an aluminum alloy in a state in which the first layer is positioned so as to be positioned closer to the infrared radiation layer
- the second layer suppresses absorption of visible light or infrared light, and even if the thickness of the first layer is reduced, the first layer
- light visible light, ultraviolet light, infrared light
- the 1st layer which consists of silver or a silver alloy can be made thin, the cost reduction of a light reflection layer can be aimed at.
- an alloying prevention transparent layer for preventing alloying of silver and aluminum is provided between the first layer and the second layer, it is possible to suppress alloying of silver and aluminum. While avoiding light absorption of the light reflecting layer, the state in which the light reflecting layer appropriately reflects light can be maintained for a long period of time, and the cooling effect can be exhibited well over a long period of time.
- the alloying of silver and aluminum gradually progresses, and the reflectance of sunlight in the light reflecting layer is increased.
- the solar absorption is expected to increase. It suppresses alloying of silver and aluminum.
- the object to be cooled can be appropriately cooled while the cost of the light reflecting layer is reduced, and the cooling effect can be exhibited well over a long period of time.
- a further characteristic configuration of the radiant cooling device of the present invention is that the thickness of the first layer is larger than 3.3 nm and not larger than 100 nm.
- the infrared radiation layer is transmitted due to the presence of the second layer. It was found that the object to be cooled can be cooled by appropriately reflecting light (visible light, ultraviolet light, infrared light).
- the thickness of the first layer made of silver or a silver alloy is set to a thin thickness greater than 3.3 nm and less than or equal to 100 nm, the light reflection layer can be sufficiently inexpensive, The object to be cooled can be cooled.
- the thickness of the first layer made of silver or a silver alloy is preferably larger than 3.3 nm and 100 nm or less, preferably 30 nm or more, so that the cooling target can be appropriately set. It can be cooled.
- the object to be cooled can be cooled while sufficiently reducing the cost of the light reflecting layer.
- a further characteristic configuration of the radiation cooling device of the present invention is that the thickness of the first layer is not less than 50 nm and not more than 100 nm.
- the thickness of the first layer made of silver or a silver alloy is in the range of 50 nm to 100 nm, the light (mainly visible light, infrared light) reflecting action by the first layer is appropriately exhibited.
- the presence of the second layer allows the light (visible light, ultraviolet light, infrared light) transmitted through the infrared radiation layer to be appropriately reflected.
- the light reflective layer is made of silver having a thickness of 300 nm or more. It came to discover that the object to be cooled can be cooled with the same capacity as that of the metal layer.
- a further characteristic configuration of the radiant cooling device of the present invention is that the thickness of the second layer is 10 nm or more.
- the second layer reflects ultraviolet light if the thickness of the second layer made of aluminum or aluminum alloy is 10 nm or more. It came to find that the light (visible light, ultraviolet light, infrared light) which permeate
- the thickness of the second layer made of aluminum or aluminum alloy may be 10 nm or more, but in order to suppress the amount of aluminum or aluminum alloy used, it is necessary to avoid making it thicker than necessary.
- the radiation cooling device of the present invention it is possible to reflect the light transmitted through the infrared radiation layer while appropriately exhibiting the action of reflecting the ultraviolet light.
- a further characteristic configuration of the radiation cooling device of the present invention is that the infrared radiation layer is made of any one of alkali-free glass, crown glass, and borosilicate glass.
- alkali-free glass, crown glass, and borosilicate glass are relatively inexpensive, but have excellent transmittance of sunlight (visible light, ultraviolet light, near infrared light) (for example, about 80%). Because it does not absorb sunlight, it emits infrared light having a wavelength equivalent to an atmospheric window (for example, a window that transmits infrared light having a wavelength of 8 to 13 ⁇ m). It has the property of high radiation intensity.
- the infrared radiation layer with any one of alkali-free glass, crown glass, and borosilicate glass, a radiation cooling device with a high cooling capacity can be achieved while reducing the overall configuration. Can be obtained.
- the cooling capacity can be improved while the overall configuration is reduced.
- a further characteristic configuration of the radiation cooling device of the present invention is that the first layer, the alloying-preventing transparent layer, and the second layer are laminated using the infrared radiation layer as a substrate.
- the overall configuration can be simplified and the overall configuration can be reduced in thickness.
- the first layer, the anti-alloying transparent layer and the second layer are laminated with the infrared radiation layer as the substrate, if the first layer, the anti-alloying transparent layer and the second layer are thin, for example, The first layer, the alloying-preventing transparent layer, and the second layer are sequentially laminated by sputtering or the like.
- the second layer, the alloying-preventing transparent layer, and the first layer are sequentially laminated on the lamination substrate by sputtering or the like, and then the presence of the second layer of the first layer.
- a separately prepared infrared radiation layer is placed on the side opposite to the side and laminated, or the part opposite to the side where the first alloying prevention transparent layer is present is sputtered, etc.
- it is not necessary to provide a substrate for stacking so that the overall configuration can be simplified and the overall configuration can be made thinner.
- the overall configuration can be simplified and the overall configuration can be made thinner.
- a further characteristic configuration of the radiation cooling device of the present invention is that an adhesion layer is laminated between the infrared radiation layer and the first layer.
- the adhesion layer is laminated between the infrared radiation layer and the first layer of the light reflection layer, the first layer of the light reflection layer is in contact with the infrared radiation layer due to a temperature change or the like. Since the occurrence of damage such as peeling can be suppressed, durability can be improved.
- a further characteristic configuration of the radiant cooling device of the present invention is that an antioxidant layer is laminated on the second layer opposite to the side where the alloying-preventing transparent layer is present.
- the antioxidant layer is laminated on the opposite side of the second layer made of aluminum or aluminum alloy from the side where the anti-alloying transparent layer is present, the second layer is oxidized even if the second layer is thinned. Therefore, since it can suppress that it deteriorates, durability can be improved.
- the radiant cooling device of the present invention it is possible to suppress the deterioration of the second layer made of aluminum or aluminum alloy and improve the durability.
- a further characteristic configuration of the radiation cooling device of the present invention is that the alloying-preventing transparent layer is a transparent nitride film.
- the transparent nitride film As the alloying-preventing transparent layer, it is possible to appropriately suppress the first layer of silver or silver alloy and the second layer of aluminum or aluminum alloy from being alloyed.
- Si 3 N 4 and AlN can be given as specific examples of the transparent nitride film.
- the transparent nitride film has an advantage that it is easy to improve productivity because the first layer of silver or silver alloy is not discolored when the film is formed by sputtering or vapor deposition.
- a further characteristic configuration of the radiation cooling device of the present invention is that the alloying-preventing transparent layer is a transparent oxide film.
- a transparent oxide film as the alloying-preventing transparent layer, it is possible to appropriately suppress the first layer of silver or silver alloy and the second layer of aluminum or aluminum alloy from being alloyed.
- many transparent oxide films can be applied.
- Al 2 O 3 , SiO 2 , TiO 2 , ZrO 2 , HfO 2 , and Nb 2 that can be easily formed by vapor deposition, sputtering, or the like. Examples thereof include O 5 and Ta 2 O 5 .
- a further characteristic configuration of the radiant cooling device of the present invention is that the alloying-preventing transparent layer has a thickness in which any one of wavelengths of 400 nm or less is a resonance wavelength.
- the thickness of the anti-alloying transparent layer is set so that any one of the wavelengths of 400 nm or less is a resonance wavelength. The light absorption amount as a whole reflection layer is suppressed.
- the sunlight spectrum is generally in the wavelength range of 300 to 4000 nm, and the sunlight intensity (light energy) longer than 400 nm is strong, but the light in the ultraviolet region of 300 to 400 nm is Because it hits the tail, it is not energetic. Therefore, even if the alloying-preventing transparent layer absorbs light, the light absorption amount of the entire light reflection layer can be suppressed by absorbing light on the short wavelength side of 400 nm or less.
- the light absorption amount of the entire light reflection layer can be suppressed.
- the alloying-preventing transparent layer has a thickness with any one of wavelengths of 300 nm or less as a resonance wavelength.
- the anti-alloying transparent layer absorbs light, but the thickness of the anti-alloying transparent layer is set to a thickness having a resonance wavelength of any one of wavelengths of 300 nm or less.
- the light absorption amount as a whole reflection layer is appropriately suppressed.
- the sunlight spectrum is generally in the wavelength range of 300 to 4000 nm, and the sunlight intensity (light energy) longer than 400 nm is strong, but the light in the ultraviolet region of 300 to 400 nm is Since it hits the tail, it is not large in terms of energy, and further, in terms of energy at the shorter wavelength side, it becomes smaller in terms of energy. Therefore, even if the alloying-preventing transparent layer absorbs light, it is possible to appropriately suppress the light absorption amount of the entire light reflection layer by absorbing light on the short wavelength side of 300 nm or less.
- the radiation cooling device of the present invention it is possible to appropriately suppress the light absorption amount of the entire light reflection layer.
- the radiation cooling device CP includes an infrared radiation layer A that radiates infrared light IR from the radiation surface H, and a side opposite to the side where the radiation surface H is present in the infrared radiation layer A.
- the light reflection layer B to be positioned is provided in a laminated state.
- the light reflecting layer B includes a first layer B1 made of silver or a silver alloy and a second layer B2 made of aluminum (abbreviated as “aluminum” in the following description) or an aluminum alloy (abbreviated as “aluminum alloy” in the following description).
- an alloying-preventing transparent layer B3 for preventing alloying of silver and aluminum are positioned on the side closer to the infrared radiation layer A in the order of the first layer B1, the alloying-preventing transparent layer B3, and the second layer B2. It is comprised in the state laminated
- the thickness (film thickness) of the first layer B1 is configured to be larger than 3.3 nm and 100 nm or less, and preferably the thickness (film thickness) of the first layer B1 is configured to be 50 nm or more and 100 nm or less. Has been.
- the thickness (film thickness) of the second layer B2 is configured to be 10 nm or more.
- the “silver alloy” an alloy in which any of copper, palladium, gold, zinc, tin, magnesium, nickel and titanium is added to silver, for example, about 0.4 to 4.5 mass% is used. Can do.
- APC-TR made by Furuya Metal
- the first layer B1 is made of silver.
- the “aluminum alloy” an alloy obtained by adding copper, manganese, silicon, magnesium, zinc, carbon steel for mechanical structure, yttrium, lanthanum, gadolinium, and terbium to aluminum can be used. In the following description, it is assumed that the second layer B2 is made of aluminum.
- the alloying-preventing transparent layer B3 is composed of a transparent nitride film or a transparent oxide film.
- the transparent nitride film include Si 3 N 4 and AlN.
- the transparent oxide film include Al 2 O 3 , SiO 2 , TiO 2 , ZrO 2 , HfO 2 , Nb 2 O 5 , Ta 2 O 5 , and other oxides that can be easily formed by vapor deposition or sputtering. The details will be described later.
- the thickness of the alloying-preventing transparent layer B3 is such that any one of the wavelengths of 400 nm or less is a resonance wavelength, and preferably any one of the wavelengths of 300 nm or less is the resonance wavelength. The details will be described later.
- the radiant cooling device CP is configured by laminating the first layer B1, the alloying-preventing transparent layer B3, and the second layer B2 using the infrared radiation layer A as a substrate. Specifically, the adhesion layer 3 is laminated between the infrared radiation layer A as the substrate and the first layer B1, and the opposite side of the second layer B2 from the existence side of the anti-alloying transparent layer B3. In addition, an antioxidant layer 4 is laminated.
- the radiant cooling device CP sequentially forms the adhesion layer 3, the first layer B1, the alloying prevention transparent layer B3, the second layer B2, and the antioxidant layer 4 by, for example, sputtering using the infrared radiation layer A as a substrate. It is comprised in the form to do.
- the adhesion layer 3 is configured to form aluminum oxide (Al 2 O 3 ) to a thickness of 20 to 100 nm.
- the antioxidant layer 4 is configured to form silicon dioxide (SiO 2 ) or aluminum oxide (Al 2 O 3 ) to a thickness of 10 to several 100 nm. In the following description, it is assumed that silicon dioxide (SiO 2 ) is formed.
- the infrared radiation layer A is made of any one of alkali-free glass, crown glass, and borosilicate glass (white plate glass).
- alkali-free glass for example, OA10G (manufactured by Nippon Electric Glass) can be used
- crown glass for example, B270 (registered trademark, the same shall apply hereinafter)
- borosilicate glass for example, Tempax (registered trademark, hereinafter the same) can be used.
- “OA10G”, “B270”, and “Tempax” have high transmittance with respect to light having a wavelength corresponding to sunlight as shown in FIG. 8, and also have high atmospheric transmittance as shown in FIG. The emissivity of the wavelength corresponding to the wavelength range (so-called atmospheric window) is high.
- FIG. 8 exemplifies “Tempax” as a representative, but “OA10G”, “B270”, etc. of white plate glass are the same. In the following description, it is assumed that the infrared radiation layer A is formed of “Tempax”.
- the radiant cooling device CP reflects a part of the light L incident on the radiant cooling device CP (for example, a part of sunlight) on the radiation surface H of the infrared radiation layer A.
- the light (ultraviolet light, etc.) transmitted through the infrared radiation layer A among the light L incident on the radiation cooling device CP is reflected by the light reflection layer B.
- heat input to the radiation cooling device CP from the cooling object D located on the side opposite to the side where the light reflection layer B is present in the antioxidant layer 4 (for example, heat input from the cooling object D by heat conduction) is converted into red.
- the cooling target D is cooled by being converted into infrared light IR by the outer radiation layer A and radiating.
- light means an electromagnetic wave having a wavelength of 10 nm to 20000 nm. That is, the light L includes ultraviolet light, infrared light IR, and visible light.
- the radiation cooling device CP is formed by forming an infrared radiation layer A with a Tempax having a thickness of 1 mm, a first layer B1 of the light reflection layer B having a thickness of 50 nm, and reflecting light.
- the second layer B2 of the layer B is made of aluminum with a film thickness of 50 nm
- the adhesion layer 3 is formed with aluminum oxide (Al 2 O 3 ) with a film thickness of 5 nm
- silicon dioxide (SiO 2 ) with a film thickness of 30 nm is formed.
- the oxidation preventing layer 4 is formed and the alloying prevention transparent layer B3 of the light reflecting layer B is composed of Si 3 N 4 as a transparent nitride film or Al 2 O 3 as a transparent oxide film
- the cooling capacity of the radiant cooling device CP was calculated while changing the thickness of Si 3 N 4 as the transparent nitride film and Al 2 O 3 as the transparent oxide film, and the results shown in the tables of FIGS. 3 and 4 were obtained. became.
- the tables in FIG. 3 and FIG. 4 were calculated using a clear day in Osaka in late August as a model. That is, the solar energy is 1000 W / m 2 , the outside air temperature is 30 ° C., and the atmospheric radiation energy is 387 W / m 2 , which is calculated in late August as a model. This is calculated assuming that the temperature of the surface of the layer 4 on the side opposite to the side where the light reflecting layer B is present: hereinafter referred to as the cooling surface temperature) is 30 ° C.
- the thickness (film thickness) of Si 3 N 4 is best at 34 nm or less, and may be 47 nm or less. The reason will be described later.
- the thickness (film thickness) of Al 2 O 3 is best at 44 nm or less, and may be 60 nm or less. The reason will be described later.
- the table in FIG. 7 was calculated using a clear day in Osaka in late August as a model. That is, the solar energy is 1000 W / m 2 , the outside air temperature is 30 ° C., and the atmospheric radiation energy is 387 W / m 2 , which is calculated in late August as a model. The temperature was calculated as 30 ° C. Note that the cooling capacity in FIG. 7 is calculated assuming that the alloying-preventing transparent layer B3 does not exist.
- the radiation cooling device CP when the light reflection layer B is composed only of the first layer B1 (see FIG. 5), when the thickness of the silver forming the first layer B1 is 30 nm or less, the radiation cooling device CP However, when the light reflecting layer B is composed of the first layer B1 and the second layer B2 (see FIG. 6), if the thickness of silver is larger than 3.3 nm, The radiant cooling device CP has a cooling capacity.
- the light reflecting layer B is composed of the first layer B1 and the second layer B2 (see FIG. 6)
- the cooling capacity of the radiation cooling device CP is light reflecting.
- the layer B is composed of only the first layer B1 (see FIG. 5)
- the same ability is obtained when the silver thickness is 300 nm.
- the thickness of the Tempax constituting the infrared radiation layer A needs to be 10 ⁇ m or more and 10 cm or less, preferably 20 ⁇ m or more and 10 cm or less, more preferably 100 ⁇ m or more and 1 cm or less. That is, the infrared radiation layer A exhibits a large thermal radiation in the infrared region having a wavelength of 8 ⁇ m or more and 14 ⁇ m or less, and the thermal radiation is absorbed by each of the infrared radiation layer A and the light reflection layer B. By making it larger than sunlight and the thermal radiation of the atmosphere, it is possible to configure a radiant cooling device CP that exhibits a radiative cooling action in which the temperature is lower than the surrounding atmosphere regardless of day or night.
- the thickness must be 10 ⁇ m or more and 10 cm or less, preferably 20 ⁇ m or more and 10 cm or less, more preferably 100 ⁇ m or more and 1 cm or less are preferable.
- the cooling capacity of the radiation cooling device CP is improved, but in a state where silver and aluminum are kept in contact with each other.
- the alloying of silver and aluminum progresses, the reflectance of sunlight decreases, and the absorption of sunlight increases. Therefore, between the first layer B1 and the second layer B2 By positioning the alloying preventing transparent layer B3, alloying of silver and aluminum is suppressed.
- the anti-alloying transparent layer B3 When the anti-alloying transparent layer B3 is positioned between the first layer B1 and the second layer B2, the reflectance of sunlight in the light reflecting layer B is slightly lowered and the absorption of sunlight is slightly increased. Therefore, as shown in FIGS. 3 and 4, when the thickness of Si 3 N 4 as a transparent nitride film and Al 2 O 3 as a transparent oxide film is set to 0 nm, that is, an alloying-preventing transparent layer Compared to the case without B3, the cooling capacity of the radiation cooling device CP is slightly reduced, but the alloying of silver and aluminum is suppressed, and the reflection performance of the light reflection layer B is maintained over a long period of time. It will be possible.
- the light reflection layer B of the radiation cooling device CP is provided with the first layer B1 and the second layer B2.
- the light reflection layer B of the radiation cooling device CP is composed only of the first layer B1 made of silver having a thickness of 50 nm, as shown in FIG. The light passes through the 50 nm silver constituting the first layer B1, and the transmitted light is irradiated to the cooling object D.
- the cooling object D is configured as a light absorption layer or a heat exchanger in order to efficiently release the heat of the object to be cooled, but the thickness (thickness) of the silver constituting the first layer B1 is reduced. Then, since the transmitted light warms the cooling object D, the radiation cooling capacity (radiation cooling performance) is weakened.
- FIG. 13 shows the film thickness (thickness) of silver and the energy of sunlight (W / m) in the radiation cooling device CP (see FIG. 10) in which the light reflecting layer B is composed of the first layer B1 made of silver. 2 ).
- the radiation cooling capacity of the conventional radiant cooling device CP in which the film thickness (thickness) of the silver constituting the first layer B1 is 300 nm is as follows: summer in Japan, altitude 0m, outside temperature 30 ° C It is approximately 70 W / m 2 , depending on the humidity and the air quality during the south-west.
- the film thickness (thickness) of the silver constituting the first layer B1 is 100 nm
- the energy of transmitted sunlight becomes about 7 W / m 2
- this transmitted light heats the cooling target D.
- the cooling capacity of the radiation cooling device CP is reduced by about 10%.
- the film thickness (thickness) of the silver constituting the first layer B1 is 50 nm
- the energy of transmitted sunlight becomes about 70 W / m 2
- the transmitted light is radiated by heating the cooling object D.
- the radiation cooling capacity of the cooling device CP is greatly reduced.
- the film thickness (thickness) of the silver constituting the first layer B1 is reduced.
- the problem that occurred was explained. That is, in the case where the light reflecting layer B is constituted by only the first layer B1, the film thickness (thickness) of the silver constituting the first layer B1 cannot be sufficiently reduced.
- film thickness (thickness) As shown in FIG. 16, if aluminum has a film thickness (thickness) of 25 nm or more, it can shield sunlight transmission accurately. However, as shown in FIG. 15, aluminum tends to have a higher absorption rate of sunlight, and as shown in FIG. 17, aluminum (film thickness 50 nm) emits sunlight more than silver (film thickness 300 nm). It absorbs a lot.
- the problem in the case where the light reflecting layer B is constituted only by the second layer B2 has been described with reference to FIGS. That is, it can be seen that when the light reflection layer B is configured only by the second layer B2, the radiation cooling capacity of the radiation cooling device CP cannot be made sufficient.
- the present inventor has found that if the light reflection layer B of the radiation cooling device CP is constituted by the first layer B1 and the second layer B2, the film thickness (thickness) of the silver constituting the first layer B1. It has been found that the radiation cooling capacity can be made sufficient while the thickness is reduced.
- the transmittance of silver constituting the first layer B1 increases as the wavelength decreases, and increases as the film thickness (thickness) decreases.
- the reflectance of silver constituting the first layer B1 is larger on the long wavelength side, smaller on the shorter wavelength side, and smaller as the film thickness (thickness) becomes thinner.
- the aluminum of the second layer B2 is provided with a large reflectance enough to shield sunlight transmission as long as it has a film thickness (thickness) of 25 nm or more.
- the reflectance tends to be smaller than that of silver.
- crossing wavelength the wavelength at which the reflectance of silver and the reflectance of aluminum intersect (hereinafter, abbreviated as “crossing wavelength”) varies depending on the film thickness (thickness) of silver.
- FIG. 22 illustrates cross wavelengths when the film thickness (thickness) of aluminum is changed when the film thickness (thickness) of aluminum is 200 nm.
- the film thickness (thickness) of silver constituting the first layer B1 is 50 nm.
- the cross wavelength is 450 nm, and in the light La on the shorter wavelength side than 450 nm, aluminum is more silver than silver.
- the reflectance of silver is higher than that of aluminum in light Lb on the longer wavelength side.
- light having a wavelength of 450 nm or less, which is an intersecting wavelength easily transmits silver, and thus the transmitted light is irradiated to the aluminum of the second layer B2.
- the light La having a wavelength shorter than 450 nm is reflected by the first layer B1 partially formed of silver, and the light transmitted through the first layer B1 is formed of aluminum. It is reflected by the second layer B2. Further, the light Lb having a wavelength longer than 450 nm is mainly reflected by the first layer B1.
- the light reflecting layer B is composed of the first layer B1 and the second layer B2
- the film thickness (thickness) of the aluminum constituting the second layer B2 is greater than 10 nm. Since it does not transmit, the film thickness (thickness) of the second layer B2 is 10 nm or more.
- the thickness (thickness) of the aluminum constituting the second layer B2 is increased to 50 nm or more. That is, aluminum is oxidized to form a passive state, but the durability increases as the layer capable of forming the passive state becomes thicker.
- the film thickness (thickness) of the silver of the first layer B1 is 50 nm
- the aluminum of B2 By reflecting with the aluminum of B2, the light transmitted through the infrared radiation layer A can be efficiently reflected.
- the light reflecting layer B is composed of the first layer B1 and the second layer B2
- the light having a wavelength longer than the crossing wavelength is reflected mainly by the silver of the first layer B1, and the silver is reflected.
- the light transmitted through the infrared radiation layer A can be efficiently reflected.
- the film thickness (thickness) of the first layer B1 is 100 nm or less and 50 nm or more, The reflectance of sunlight can be sufficiently improved.
- the radiation cooling device CP will produce a radiant cooling capability (radiant cooling performance).
- the radiation cooling capacity (radiation cooling performance) of the radiation cooling device CP is such that the light reflection layer B is composed of only the first layer B1 ( In FIG. 2), the same ability is obtained when the silver thickness is 300 nm.
- the light reflection layer B of the radiation cooling device of the present invention is made of a noble metal by reflecting light in the visible light region from the ultraviolet light that passes through the silver of the first layer B1 with the aluminum of the second layer B2. It reduces the amount of silver used. For this reason, the light transmitted through the silver of the first layer B1 needs to be transmitted as much as possible through the transparent nitride film and the transparent oxide film constituting the alloying-preventing transparent layer B3.
- the transparent nitride film and transparent oxide film constituting the alloying prevention transparent layer B3 need to be transparent in the ultraviolet to visible light region, but what kind of transparent nitride film and transparent oxide film are suitable?
- narrow down from the viewpoint of chemical reactivity it is preferable to screen with reference to the standard production Gibbs energy.
- the reaction of the following formula (1) in which the metal A and oxygen react proceeds in the direction in which the standard production Gibbs energy is small.
- the standard production Gibbs energy is smaller in the reaction of the following formula (2) than the reaction of the above formula (1).
- the oxide film semi-permanently highly transparent select a material with a standard Gibbs energy of transparent nitride film and transparent oxide film that is smaller than that of silver or aluminum as the material for transparent nitride film or transparent oxide film. It is important to do.
- the material of the transparent oxide film there is no problem even if a material higher than the standard generation energy of aluminum is selected because of the low oxygen diffusibility of aluminum.
- a material higher than the standard generation energy of aluminum is selected because of the low oxygen diffusibility of aluminum.
- a transparent nitride film a material whose standard generation Gibbs energy is equal to or less than silver and aluminum may be selected. That is, since Ag 3 N (+315 kJ / mol) and AlN ( ⁇ 287 kJ / mol), a material smaller than ⁇ 287 kJ / mol of Al is preferable, and a material transparent in the ultraviolet to visible region is desired. Specific examples of materials that satisfy such conditions include Si 3 N 4 ( ⁇ 676 kJ / mol) and AlN ( ⁇ 287 kJ / mol).
- a material whose standard generation Gibbs energy change is equal to or less than silver may be selected. That is, since it is Ag 2 O ( ⁇ 11 kJ / mol), it is preferable to select a material whose standard production Gibbs energy is smaller than ⁇ 11 kJ / mol.
- the transparent oxide film there is no problem even if a material larger than the standard production Gibbs energy ( ⁇ 1582 kJ / mol) of the aluminum oxide Al 2 O 3 is used. The reason is that Al 2 O 3 is a material having an extremely low oxygen diffusibility. A specific example will be described.
- Group 1 element oxides Li 2 O ( ⁇ 561 kJ / mol), Na 2 O ( ⁇ 375 kJ / mol), K 2 O ( ⁇ 320 kJ / mol)
- Group 2 element oxides BeO (-580 kJ / mol), MgO (-569 kJ / mol), CaO (-604 kJ / mol), SrO (-592 kJ / mol), BaO (-520 kJ / mol)
- Group 4 element oxides TiO 2 ( ⁇ 884 kJ / mol), ZrO 2 ( ⁇ 1042 kJ / mol), HfO 2 ( ⁇ 1088 kJ / mol)
- Group 5 element oxides Nb 2 O 5 ( ⁇ 1766 kJ / mol), Ta 2 O 5 ( ⁇ 1911 kJ / mol)
- Group 13 element oxides B 2 O 3 ( ⁇ 1194 kJ / mol), Al 2 O 3 ( ⁇ 1582 kJ / mol
- Al 2 O 3 ( ⁇ 1582 kJ / mol), SiO 2 ( ⁇ 856 kJ / mol), TiO 2 ( ⁇ 884 kJ / mol), ZrO 2 ( ⁇ 1042 kJ / mol) , HfO 2 ( ⁇ 1088 kJ / mol), Nb 2 O 5 ( ⁇ 1766 kJ / mol), Ta 2 O 5 ( ⁇ 1911 kJ / mol), and these materials are easy to form.
- the transparent oxide film may be Al 2 O 3 which is an oxide of Al, Nb 2 O 5 ( ⁇ 1766 kJ / mol), Ta 2 O 5 ( ⁇ 1911 kJ / mol) should be selected. In this case, the change in reflectance over time due to the reaction between Al and the transparent oxide film does not occur.
- the standard production Gibbs energy of Ag 3 N is +315 kJ / mol
- the standard production Gibbs energy of Ag 2 O is ⁇ 11 kJ / mol. That is, Ag 3 N having a positive standard Gibbs energy is very unstable, and it is more stable if Ag and N 2 exist separately.
- Ag 2 O having a negative standard generation Gibbs energy is more stable when it becomes black silver oxide than when it is divided into Ag and O 2 .
- the alloying-preventing transparent layer B3 is a transparent oxide film.
- the alloying prevention transparent layer B3 is used as a transparent oxide film
- silver is formed between the first layer B1 and the alloying prevention transparent layer B3 when the transparent oxide film is formed.
- Oxidized silver oxide E may be formed in a film shape.
- Al 2 O 3 is formed from the viewpoint of the standard generation Gibbs energy.
- sputtering is a technique in which radicalized gas in plasma is applied as kinetic energy to a target material, and the material knocked out thereby is laminated on a sample. Further, when forming an oxide film, it is common to form a film with a gas in which oxygen is introduced into plasma to produce oxygen radicals.
- oxides such as Al 2 O 3 and SiO 2 generally have a very low film formation rate
- a sputtering rate such as Al or Si is high, a target before oxidation is knocked out, and a large amount of oxygen is put into the plasma.
- a method is used in which an oxide is produced by reacting oxygen and a target material on the sample surface. This method is called “reactive sputtering”.
- a transparent nitride film is more suitable than the transparent oxide film as the alloying-preventing transparent layer B3. This is because silver discoloration can be prevented even if a film is formed under complicated conditions not limited by sputtering or vapor deposition (even if productivity is improved).
- Ag 3 N (+315 kJ / mol) is very unstable, and it is more stable if Ag and N 2 are present.
- silver nitride (black) cannot be formed in the first place with the energy of sputtering or vapor deposition regardless of the conditions. Therefore, when a transparent nitride film is used as the anti-alloying transparent layer B3, variations in film formation become extremely rich. Therefore, it is considered preferable to use a transparent nitride film as the anti-alloying transparent layer B3.
- the thickness (film thickness) of the alloying-preventing transparent layer B3 is preferably a thickness having any one of wavelengths of 400 nm or less as a resonance wavelength, and further, of the wavelength of 300 nm or less. It can be considered that a thickness having any one of the wavelengths as the resonance wavelength is more preferable.
- the plasmon resonance wavelength is accurately determined by the refractive index distribution of the silver of the first layer B1, the aluminum of the anti-alloying transparent layer B3, and the aluminum of the second layer B2, but is approximated by the following equation (3).
- ⁇ L * 4 * n / m -------- (3)
- ⁇ is a resonance wavelength
- L is a film thickness
- n is a refractive index at a calculation wavelength
- m is an arbitrary natural number.
- the sunlight spectrum is approximately in the wavelength range of 300 to 4000 nm.
- L ⁇ / (4 * n) 400 / n 400 nm / 4 ------- (4)
- n 400 nm is a refractive index when the wavelength is 400 nm.
- the transparent nitride film is silicon nitride (Si 2 N 3 ).
- the radiation cooling device CP is formed by forming an infrared radiation layer A with Tempax having a thickness of 1 mm, the first layer B1 of the light reflection layer B being silver having a thickness of 50 nm, and reflecting light.
- the second layer B2 of the layer B is made of aluminum with a film thickness of 50 nm
- the adhesion layer 3 is formed with aluminum oxide (Al 2 O 3 ) with a film thickness of 5 nm
- silicon dioxide (SiO 2 ) with a film thickness of 30 nm is formed.
- the anti-oxidation layer 4 is formed and the light reflection layer B is configured to include the anti-alloying transparent layer B3 (see FIG. 2), Si 3 N 4 as a transparent nitride film or a transparent oxide film when changing the thickness of the Al 2 O 3 as a diagram showing the reflectance of the light reflecting layer B.
- the transparent oxide film has a refractive index greatly different from that of the transparent nitride film.
- n 400 nm is 1.67 and n 300 nm is 1.70. Therefore, when the resonance wavelength is calculated, as shown in FIG. 24, when the transparent oxide film is aluminum oxide (Al 2 O 3 ), the film thickness is preferably 60 nm or less, and particularly preferably 44 nm or less. In view of preventing the peeling due to the shear stress due to the difference in the coefficient of thermal expansion of the material, the thinner (thickness) of the alloying prevention transparent layer B3 is better.
- the film thickness (thickness) when the first layer B1 is formed of a silver alloy is the first layer B1.
- the film thickness (thickness) when the second layer B2 is formed of an aluminum alloy is the second layer B2. Can be made equal to the film thickness (thickness) in the case of forming aluminum.
- Adhesion layer 4 Antioxidation layer A Infrared radiation layer B Light reflection layer B1 First layer B2 Second layer B3 Anti-alloying transparent layer
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Abstract
Description
尚、光反射層は、赤外放射層を透過した光に加えて、赤外放射層から光反射層の存在側に放射される赤外光を赤外放射層に向けて反射する作用も有することになるが、以下の説明においては、光反射層が、赤外放射層を透過した光(可視光、紫外光、赤外光)を反射するために設けられるものであるとして説明する。
ちなみに、特許文献2には、アルミニウムからなる金属層を基板として、赤外放射層を構成するSiO層とMgO層とを積層するように構成されている。
しかしながら、アルミニウムからなる金属層は、銀よりも光を吸収し易いものであるから、赤外放射層を透過した光が、アルミニウムからなる金属層に吸収されて、当該光の吸収により昇温する金属層が、冷却対象を加温すること等に起因して、冷却対象を適切に冷却できない虞があった。
前記光反射層が、銀あるいは銀合金からなる第1層と、アルミニウムあるいはアルミニウム合金からなる第2層と、銀とアルミニウムとの合金化を防止する合金化防止透明層とを、前記第1層、前記合金化防止透明層及び前記第2層の順に前記赤外放射層に近い側に位置させる形態で積層した状態に構成されている点にある。
これに対して、アルミニウムあるいはアルミニウム合金は、銀あるいは銀合金に較べて、可視光や赤外光を効率良く反射することができないものの、紫外光を効率良く反射することができる傾向となる。
しかも、アルミニウムあるいはアルミニウム合金は、銀あるいは銀合金に較べて、可視光や赤外光を吸収し易い傾向となる。
ちなみに、赤外放射層を基板として、第1層、合金化防止透明層及び第2層を積層する際に、第1層、合金化防止透明層及び第2層が薄い場合には、例えば、スパッタリング等により、第1層、合金化防止透明層及び第2層を順次積層することになる。
ちなみに、透明窒化膜の具体例としては、Si3N4、AlNを挙げることができる。
尚、透明窒化膜は、スパッタリングや蒸着等を用いて製膜する際に、第1層の銀あるいは銀合金が変色しないため、生産性を向上し易い利点がある。
ちなみに、透明酸化膜としては、多数のものが適用できるが、具体例の一例として、蒸着やスパッタリング等で製膜しやすいAl2O3、SiO2、TiO2、ZrO2、HfO2、Nb2O5、Ta2O5を挙げることができる。
したがって、合金化防止透明層が光を吸収するとしても、400nm以下の短波長側の光を吸収させるようにすることにより、光反射層全体としての光吸収量を抑制できるのである。
したがって、合金化防止透明層が光を吸収するとしても、300nm以下の短波長側の光を吸収させるようにすることにより、光反射層全体としての光吸収量を適切に抑制できるのである。
〔放射冷却装置の構成〕
図1に示すように、放射冷却装置CPには、放射面Hから赤外光IRを放射する赤外放射層Aと、当該赤外放射層Aにおける放射面Hの存在側とは反対側に位置させる光反射層Bとが積層状態に設けられている。
第2層B2の厚さ(膜厚)が、10nm以上に構成されている。
尚、以下の記載においては、第1層B1を、銀を用いて構成するものとして説明する。
尚、以下の記載においては、第2層B2を、アルミを用いて構成するものとして説明する。
透明窒化膜としては、Si3N4、AlNを挙げることができる。
透明酸化膜としては、蒸着やスパッタリングなどで製膜しやすいAl2O3、SiO2、TiO2、ZrO2、HfO2、Nb2O5、Ta2O5や、その他の酸化物を挙げることができるが、その詳細は後述する。
具体的には、基板としての赤外放射層Aと第1層B1との間に、密着層3が積層され、かつ、第2層B2における合金化防止透明層B3の存在側とは反対側に、酸化防止層4が積層されている。
酸化防止層4が、二酸化ケイ素(SiO2)又は酸化アルミニウム(Al2O3)を、10~数100nmに製膜する形態に構成されている。尚、以下の記載においては、二酸化ケイ素(SiO2)が製膜されているとして説明する。
ちなみに、無アルカリガラスとしては、例えば、OA10G(日本電気硝子製)を用いることができ、クラウンガラスとしては、例えば、B270(登録商標、以下同じ)を用いることができ、ホウケイ酸ガラスとしては、例えば、テンパックス(登録商標、以下同じ)用いることができる。
ちなみに、図8は「テンパックス」を代表として例示するが、白板ガラスの「OA10G」、「B270」なども同様である。
尚、以下の記載においては、赤外放射層Aが「テンパックス」にて形成されているとして説明する。
尚、本実施形態において光とは、その波長が10nmから20000nmの電磁波のことを言う。つまり、光Lには、紫外光、赤外光IRおよび可視光が含まれる。
図2に示すように、放射冷却装置CPを、厚さ1mmのテンパックスにて赤外放射層Aを形成し、光反射層Bの第1層B1を膜厚が50nmの銀とし、光反射層Bの第2層B2を膜厚が50nmのアルミとし、密着層3を膜厚が5nmの酸化アルミニウム(Al2O3)にて形成し、膜厚が30nmの二酸化ケイ素(SiO2)にて酸化防止層4を形成し、且つ、光反射層Bの合金化防止透明層B3を、透明窒化膜としてのSi3N4や透明酸化膜としてのAl2O3にて構成する場合において、透明窒化膜としてのSi3N4や透明酸化膜としてのAl2O3の厚さを変化させながら、放射冷却装置CPの冷却能力を計算したところ、図3及び図4の表に示す結果となった。
すなわち、太陽光エネルギーを1000W/m2とし、外気温を30℃、大気の輻射エネルギーが387W/m2の8月下旬をモデルとして計算したものであって、放射冷却装置CPの温度(酸化防止層4における光反射層Bの存在側とは反対側の面の温度:以下、冷却面温度と記載する場合がある)が30℃であるとして計算したものである。
図4に示すように、Al2O3の厚さ(膜厚)は、44nm以下が最もよく、60nm以下でもよい。その理由は後述する。
光反射層Bを第1層B1のみにて構成する場合(図5参照)と、光反射層Bを第1層B1及び第2層B2にて構成する場合(図6参照)とにおいて、第1層B1の銀の厚みを変化させながら、放射冷却装置CPの冷却能力を計算したところ、図7の表に示す結果となった。
すなわち、太陽光エネルギーを1000W/m2とし、外気温を30℃、大気の輻射エネルギーが387W/m2の8月下旬をモデルとして計算したものであって、放射冷却装置CPの温度(冷却面温度)が30℃であるとして計算したものである。
尚、図7の冷却能力は、合金化防止透明層B3が存在しないものとして計算したものである。
つまり、赤外放射層Aを、波長8μm以上14μm以下の赤外域で大きな熱輻射を示し、当該熱輻射が、赤外放射層A及び光反射層Bの夫々にて吸収されるAM1.5Gの太陽光及び大気の熱輻射よりも大きくなるようにすることにより、昼夜を問わず周囲の大気よりも温度が低下する放射冷却作用を発揮する放射冷却装置CPを構成することができる。
そして、そのようにするにあたり、赤外放射層Aをテンパックスにて構成する場合には、厚さを10μm以上で10cm以下にする必要があり、好ましくは、20μm以上で10cm以下、より好ましくは、100μm以上で1cm以下が良い。
以下、放射冷却装置CPの光反射層Bに、第1層B1と第2層B2とを備えさせる点についての補足説明を行う。
図10に示すように、放射冷却装置CPの光反射層Bを、厚さが50nmの銀からなる第1層B1のみにて構成した場合においては、図11に示すように、短波長側の光が、第1層B1を構成する50nmの銀を透過することになり、透過した光が冷却対象Dに照射されることになる。
つまり、冷却対象Dは、被冷却物の熱を効率的に逃がすために、光吸収層や熱交換器として構成されるが、第1層B1を構成する銀の膜厚(厚さ)を薄くすると透過した光が冷却対象Dを温めるので放射冷却能力(放射冷却性能)が弱まることになる。
第1層B1を構成する銀の膜厚(厚さ)を300nmの膜厚(厚さ)にする従来の放射冷却装置CPの放射冷却能力は、日本の夏、標高0m、外気温度が30℃の南中時、湿度や空気の澄み具合にもよるが、概ね70W/m2程度である。
さらに、第1層B1を構成する銀の膜厚(厚さ)が50nmになると、透過する太陽光のエネルギーが70W/m2程度となり、この透過光が冷却対象Dを加熱することにより、放射冷却装置CPの放射冷却能力が大きく低下する。
つまり、光反射層Bを第1層B1のみにて構成する場合においては、第1層B1を構成する銀の膜厚(厚さ)を十分に薄くすることができないものとなる。
しかしながら、図15に示すように、アルミは太陽光の吸収率が高い傾向にあり、しかも、図17に示すように、アルミ(膜厚50nm)は、銀(膜厚300nm)よりも太陽光を多く吸収するものである。
尚、図18に示すように、光反射層Bを第1層B1のみにて構成し、かつ、第1層B1を構成する銀の膜厚(厚さ)を300nmにする場合においては、外気温が30℃の南中時における放射冷却能力は、70W/m2程度となる。
つまり、光反射層Bを第2層B2のみにて構成する場合には、放射冷却装置CPの放射冷却能力を十分な能力にすることができないことが分かる。
また、図21に示すように、第1層B1を構成する銀の反射率は、長波長側では大きく、短波長側ほど小さくなり、かつ、膜厚(厚さ)が薄くなるほど小さくなる。
さらに、第2層B2のアルミは、上述の如く、25nm以上の膜厚(厚さ)があれば、太陽光の透過を的確に遮蔽できる程度の大きな反射率を備えるものであり、しかも、銀の反射率が小さくなる短波長側においても大きな反射率を備えるが、銀の反射率が高い長波長側では、銀の反射率よりも小さくなる傾向となる。
ちなみに、図12に示すように、交差波長である450nm以下の波長の光は、銀を透過し易くなるので、当該透過した光は、第2層B2のアルミに照射されることになる。
また、450nmよりも長波長側の光Lbは、主として第1層B1にて反射されることになる。
ちなみに、耐腐食性を向上させることを考えると、第2層B2を構成するアルミの膜厚(厚さ)は、50nm以上に厚くするのが望ましい。つまり、アルミは酸化して不働態を形成するが、不働態を形成できる層が分厚いほど耐久性が向上するからである。
その結果、光反射層Bを第1層B1と第2層B2にて構成する放射冷却装置CPにおいては、第1層B1の膜厚(厚さ)を100nm以下でかつ50nm以上にすれば、太陽光の反射率を十分に向上させることができる。
このため、光反射層Bを第1層B1のみにて構成する場合には、銀の膜厚(厚さ)を300nmにして太陽光の透過を完全に遮断する場合と比較して、銀の膜厚(厚さ)を80nmにすると、放射冷却能力(放射冷却性能)が約一割程度下がる。
そして、銀の膜厚(厚さ)を40nm未満にすると、冷却能力(放射冷却能力)が大きく低下し、30nm以下では、冷却対象Dが加熱されることになる。
しかも、第1層B1を形成する銀の厚みが50nm~100nmのときには、放射冷却装置CPの放射冷却能力(放射冷却性能)が、光反射層Bを第1層B1のみにて構成する場合(図2参照)において銀の厚みを300nmとするときと、同等の能力となる。
上述の如く、第1層B1の銀と第2層B2のアルミとを接触させた状態で長時間経過すると、銀とアルミの合金化が次第に進み、光反射層Bの太陽光の反射率が悪くなり、太陽光吸収が増加することが予想されるため、銀とアルミの合金化を防止するために、第1層B1と第2層B2との間に合金化防止透明層B3を設けることになる。
銀とアルミの合金化を防止する合金化防止透明層B3としては、第1層B1の銀を透過した光を良く透過する透明窒化膜および透明酸化膜が考えられる。
このため、第1層B1の銀を透過した光を、合金化防止透明層B3を構成する透明窒化膜および透明酸化膜ができるだけ透過する必要がある。
先ずは、化学反応性の観点から絞り込む。化学反応性の観点から絞り込む際は標準生成ギブスエネルギーを参考にスクリーニングするのが好ましい。金属Aと酸素が反応する下記(1)式の反応は、標準生成ギブスエネルギーの小さい方向に進む。
nA+mO2→AnO2m--------(1)
例えば、上記(1)式の反応よりも下記の(2)式の反応の方が、標準生成ギブスエネルギーが小さいとする。
nB+mO2→BnO2m--------(2)
この場合において、nモル(mol)のA及びBとmモル(mol)のOとを混合すると、平衡状態においてすべての酸素はBと結合することになる。さらに、1モル(mol)のAnO2mとnモル(mol)のBとを混合すると、いずれAとBnO2mに変化することになる。
(透明窒化膜の具体例)
透明窒化膜の場合には、標準生成ギブスエネルギーが銀およびアルミ以下である材料を選ぶとよい。
つまり、Ag3N(+315kJ/mol)、AlN(-287kJ/mol)であるから、Alの-287kJ/molよりも小さな材料が良く、なおかつ紫外から可視領域において透明な材料が望まれる。
このような条件を満たす材料として、具体的には、Si3N4(-676kJ/mol)、AlN(-287kJ/mol)が挙げられる。
透明酸化膜の場合には、標準生成ギブズエネルギー変化が銀以下である材料を選ぶとよい。
つまり、Ag2O(-11kJ/mol)であるから、標準生成ギブスエネルギーが-11kJ/molよりも小さな材料を選ぶとよい。
なお、上述の如く、透明酸化膜の場合、アルミの酸化物Al2O3の標準生成ギブスエネルギー(-1582kJ/mol)よりも大きな材料を用いても問題ない。その理由は、Al2O3は、酸素拡散性の極めて低い材料であることによる。
具体例を示して説明すると、Al2O3と標準生成ギブスエネルギーの低い酸化物Xとを密着させる場合、当該酸化物X内の原子1~2層程度の酸素がAlに引き抜かれXとAl2O3に変化してしまう一方で、Al2O3の酸素拡散性が極めて小さいために、酸化物X中の酸素がAl中に拡散することができないためである。
その結果、透明酸化膜の場合は、標準生成ギブスエネルギーが-11kJ/molよりも小さな材料を選ぶとよいことになり、且つ、紫外から可視領域において透明な材料が望まれる。
このような条件を満たす材料を列挙すると、以下のようなものが挙げられる。尚、族で分類しているが、族の酸化物のすべてが透明性及び標準生成ギブスエネルギーの観点で優れているわけでなく、上記条件を満たす酸化物だけを抜き出して記載する。
第2族元素酸化物:BeO(-580kJ/mol)、MgO(-569kJ/mol)、CaO(-604kJ/mol)、SrO(-592kJ/mol)、BaO(-520kJ/mol)
第4族元素酸化物:TiO2(-884kJ/mol)、ZrO2(-1042kJ/mol)、HfO2(-1088kJ/mol)
第5族元素酸化物:Nb2O5(-1766kJ/mol)、Ta2O5(-1911kJ/mol)
第13族元素酸化物:B2O3(-1194kJ/mol)、Al2O3(-1582kJ/mol)、Ga2O3(-998kJ/mol)
第14族元素酸化物:SiO2(-856kJ/mol)、GeO2(-500kJ/mol)、SnO2(-856kJ/mol)
合金化防止透明層B3として、透明窒化膜と透明酸化膜のどちらを選択する方が良いかについて考える。結論としては、作製上、透明窒化膜を用いる方が良い。
銀の窒化物(Ag3N)と酸化物(Ag2O)とはいずれも黒い。第1層B1の銀の膜厚は薄く、紫外から可視領域の光を透過するので、銀の窒化物もしくは酸化物が生成されると、第1層B1の銀を透過した光が吸収されるので、日照下での放射冷却性能が著しく低下する。つまり、銀の窒化膜と酸化膜は少量でも、できてはならない。
Ag3Nの標準生成ギブスエネルギーは、+315kJ/molであり、Ag2Oの標準生成ギブスエネルギーは、-11kJ/molである。つまり、標準生成ギブスエネルギーが正の値のAg3Nは、非常に不安定であって、AgとN2とが分かれて存在したほうが安定である。これに対して、標準生成ギブスエネルギーが負の値のAg2Oは、黒色の酸化銀となる方が、AgとO2とに分かれているよりも安定である。
ちなみに、スパッタリングは、プラズマ中のラジカル化したガスをターゲット材料に運動エネルギーとして与え、それによってたたき出した材料をサンプルに積層させる手法である。
また、酸化物を製膜する際には、プラズマ中に酸素を入れて酸素ラジカルを作ったガスで製膜することが一般的である。
銀の標準生成エネルギーは、大抵の透明酸化物の標準生成エネルギーよりも負に小さい。これは、上述の如く、酸素が銀に存在するよりも透明酸化物中に存在する方が安定であることを意味している。しかしながら、成膜した酸化膜に酸素欠陥がない場合には、酸化銀中の酸素の行き場がないので、酸化銀は銀に変化しない。
従って、一度形成された酸化銀Eはなくならない。そして、上述の通り酸化銀Eは有色酸化物であることから、第1層B1の銀を透過した光を吸収するので、日照下での放射冷却性能を著しく低下させる。
ちなみに、上述の如く、Ag3N(+315kJ/mol)は非常に不安定であり、AgとN2がわかれて存在したほうが安定である。このことから、どのような条件で成膜をおこなってもスパッタリングや蒸着程度のエネルギーでは、そもそも銀の窒化物(黒色)はできない。
したがって、合金化防止透明層B3として透明窒化膜を用いると、成膜のバリエーションが極めて豊かになるので、合金化防止透明層B3としては透明窒化膜を用いるのが好適であると考えられる。
上記の通り、合金化防止透明層B3としては、透明窒化膜と透明酸化膜のどちらも使用できるが、製作面を鑑みると、透明窒化膜の方が優れていることを説明した。
次に、合金化防止透明層B3の厚さ(膜厚)を検討する。
λ=L*4*n/m--------(3)
なお、λは共鳴波長、Lは膜厚、nは計算波長における屈折率、mは任意の自然数である。
したがって、400nm以下の短波長側の光吸収は、放射冷却材料を設計するうえで許容される。つまり、最大の共鳴波長(m=1の時の波長)が400nm以下の短波長側になるように窒化膜の厚みを設計すればよい(下記(4)式を参照のこと)。
L<λ/(4*n)=400/n400nm/4--------(4)
尚、n400nmは、波長が400nmのときの屈折率である。
つまりは、L<λ/(4*n)=300/n300nm/4を満たす厚みであるのが特に望ましい。
窒化シリコンのn400nm=2.1であり、n300nm=2.17である。したがって、窒化シリコンの場合、膜厚47nm以下が良く、特に、34nm以下が望ましくなる。
したがって、共鳴波長の計算を行うと、図24に示すように、透明酸化膜が酸化アルミニウム(Al2O3)の場合、膜厚は60nm以下が良く、特に、44nm以下が望ましい。
なお、材料の熱膨張率の違いに起因するせん断応力による剥がれを防止する観点を考えると、合金化防止透明層B3の厚さ(膜厚)は薄ければ薄い方が良い。
以下、別実施形態を列記する。
(1)上記実施形態では、赤外放射層Aを基板として、第1層B1、合金化防止透明層B3及び第2層B2を積層する場合を例示したが、赤外放射層Aとは異なる他の基板に対して、第2層B2、合金化防止透明層B3及び第1層B1を積層する形態で光反射層Bを形成して、赤外放射層Aと光反射層Bとを重ね合わせる形態で積層してもよい。この場合、赤外放射層Aと光反射層Bとの間に、伝熱可能であれば多少の隙間が存在してもよい。
4 酸化防止層
A 赤外放射層
B 光反射層
B1 第1層
B2 第2層
B3 合金化防止透明層
Claims (12)
- 放射面から赤外光を放射する赤外放射層と、当該赤外放射層における前記放射面の存在側とは反対側に位置させる光反射層とが積層状態で設けられた放射冷却装置であって、
前記光反射層が、銀あるいは銀合金からなる第1層と、アルミニウムあるいはアルミニウム合金からなる第2層と、銀とアルミニウムとの合金化を防止する合金化防止透明層とを、前記第1層、前記合金化防止透明層及び前記第2層の順に前記赤外放射層に近い側に位置させる形態で積層した状態に構成されている放射冷却装置。 - 前記第1層の厚さが、3.3nmよりも大きく、かつ、100nm以下である請求項1に記載の放射冷却装置。
- 前記第1層の厚さが、50nm以上で、かつ、100nm以下である請求項1又は2に記載の放射冷却装置。
- 前記第2層の厚さが、10nm以上である請求項1~3のいずれか1項に記載の放射冷却装置。
- 前記赤外放射層が、無アルカリガラス、クラウンガラス、ホウケイ酸ガラスのうちのいずれかのガラスにて構成されている請求項1~4のいずれか1項に記載の放射冷却装置。
- 前記赤外放射層を基板として、前記第1層、前記合金化防止透明層及び前記第2層が積層されている請求項1~5のいずれか1項に記載の放射冷却装置。
- 前記赤外放射層と前記第1層との間に、密着層が積層されている請求項6に記載の放射冷却装置。
- 前記第2層における前記合金化防止透明層の存在側とは反対側に、酸化防止層が積層されている請求項6又は7に記載の放射冷却装置。
- 前記合金化防止透明層が、透明窒化膜である請求項1~8のいずれか1項に記載の放射冷却装置。
- 前記合金化防止透明層が、透明酸化膜である請求項1~8のいずれか1項に記載の放射冷却装置。
- 前記合金化防止透明層が、400nm以下の波長のうちのいずれかの波長を共鳴波長とする厚さである請求項1~10のいずれか1項に記載の放射冷却装置。
- 前記合金化防止透明層が、300nm以下の波長のうちのいずれかの波長を共鳴波長とする厚さである請求項1~11のいずれか1項に記載の放射冷却装置。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2020022156A1 (ja) * | 2018-07-23 | 2020-01-30 | 大阪瓦斯株式会社 | 放射冷却装置 |
| JPWO2020022156A1 (ja) * | 2018-07-23 | 2020-12-17 | 大阪瓦斯株式会社 | 放射冷却装置 |
| US11427500B2 (en) | 2018-07-23 | 2022-08-30 | Osaka Gas Co., Ltd. | Radiative cooling device |
| JP2021154652A (ja) * | 2020-03-27 | 2021-10-07 | 大阪瓦斯株式会社 | 放射冷却装置及び冷却方法 |
| JP7442366B2 (ja) | 2020-03-27 | 2024-03-04 | 大阪瓦斯株式会社 | 放射冷却装置及び冷却方法 |
| US11874073B2 (en) | 2020-04-09 | 2024-01-16 | The Hong Kong University Of Science And Technology | Radiative cooling structure with enhanced selective infrared emission |
| CN111497378A (zh) * | 2020-04-20 | 2020-08-07 | 宁波瑞凌新能源科技有限公司 | 辐射制冷金属板、其制备方法及应用 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6821084B2 (ja) | 2021-01-27 |
| JPWO2019163340A1 (ja) | 2020-12-17 |
| US20200400391A1 (en) | 2020-12-24 |
| US12281863B2 (en) | 2025-04-22 |
| CN111712738A (zh) | 2020-09-25 |
| CN111712738B (zh) | 2022-07-15 |
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