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WO2019159032A1 - Dispositif semi-conducteur pour la détection d'un rayonnement ionisant muni de fenêtres optiques micrométriques - Google Patents

Dispositif semi-conducteur pour la détection d'un rayonnement ionisant muni de fenêtres optiques micrométriques Download PDF

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Publication number
WO2019159032A1
WO2019159032A1 PCT/IB2019/050870 IB2019050870W WO2019159032A1 WO 2019159032 A1 WO2019159032 A1 WO 2019159032A1 IB 2019050870 W IB2019050870 W IB 2019050870W WO 2019159032 A1 WO2019159032 A1 WO 2019159032A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
substrate
ionizing radiation
slit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2019/050870
Other languages
English (en)
Inventor
Nicolò CARTIGLIA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Instituto Nazionale di Fisica Nucleare INFN
Original Assignee
Instituto Nazionale di Fisica Nucleare INFN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instituto Nazionale di Fisica Nucleare INFN filed Critical Instituto Nazionale di Fisica Nucleare INFN
Priority to EP19707491.7A priority Critical patent/EP3756034A1/fr
Publication of WO2019159032A1 publication Critical patent/WO2019159032A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T7/00—Details of radiation-measuring instruments
    • G01T7/005—Details of radiation-measuring instruments calibration techniques

Definitions

  • a semiconductor device for the detection of ionizing radiation with optical windows more precisely the invention relates to a device which can be qualified by the use of a laser signal.
  • the present invention generally relates to semiconductor devices for the detection of ionizing radiation.
  • Devices of this type substantial ly operate by producing an electrical signal upon the passage of ionizing radiation therethrough .
  • this signal is generated by creating free charges by ionization, electrons and holes, which generate an electric current under the influence of an external electric field.
  • This signal is then read by an electrode conveniently connected to a reading electronics.
  • radioactive sources are not always available, the energy of the emitted radiation is too low, the direction of the radiation is not known as it is emitted by the radioactive source in a 77 di recti ons ,
  • laser signals are used for the qualification, which “emulate” the creation of charges in the semi conductor by ionizing radiation.
  • the limit of the prior art is that the reading electrodes of the si licon aluminum-coated detectors do not al low the laser signal to penetrate because the metal is notoriously opaque to the radiation of the wave! engths involved.
  • the prior art provides si licon detectors only partial ly coated with aluminum.
  • the partial coating with aluminum alters the operation of the detector, thus making its behavior unpredictabl e once exposed to the particle beam.
  • the only information that can be obtained from the qualification concerns only the detector fraction not affected by the aluminum coating.
  • a further drawback of the devices of the prior art lies in the role played by the optical system used for the qua! i fi cation of the devices: the deposition of charge by the laser strongly depends on the focusing of the optical system which can vary from day to day with the same components and is therefore not known a priori .
  • the invention consists of a semiconductor device for the detection of ionizing radiation adapted to be qualified by using a laser signal in order to know a priori the response of the device to the passage of ionizing radiation therethrough .
  • the invention also consists in the method of using such a device in order to qualify it by using a laser signal .
  • Figure 1 shows the cross-section of a semi conductor device according to the present invention
  • Figure 2 shows the above device during normal operation, i.e., during exposure to ionizing radiation (2a) and during exposure to a laser signal (2b);
  • Figure 3 shows a semiconductor device which forms part of the prior art
  • Figures 4a, 4b and 4c show the experimental data reported by a test performed on a semiconductor device of the known type (4a) from a spatial (4b) and signal (4c) amplitude point of view.
  • Semiconductor devices for the detection of ionizing radiation are constructed by using a substrate of semiconductor material typically characterized by a p o n doping on which a thin layer of doping of a different type from the first one is implanted ( type n or type p) .
  • the device shown in figure 1 is described.
  • Such a device consists of a substrate 1 of semiconductor material character! zed by a p doping (for example Silicon p ) and a layer 2 of semiconductor material with n doping (for example silicon n ) placed on a first face of said substrate 1 to form a first electrode.
  • a p doping for example Silicon p
  • n doping for example silicon n
  • a second electrode 5 is provided at a second surface of the substrate 1, opposed to the first surface.
  • the first electrode 2 is typically segmented or made up of several semiconductor material regions characterized by the same type of doping, in the exemplified case n doping.
  • Said doping regions which form the first electrode 2 may extend along a main direction so as to form strips, giving rise to so-called microstri p detectors , or may be arranged in a matrix forming the so-called pixel detectors .
  • the strips or pixels thus formed are referred to as the “reading electrode” .
  • the reading electrodes are generally coated, at least in part, by a layer 3 of metal (for example aluminum) having the function of ensuring a good electrical contact between the reading electrode and the electronics 4 required to read the electric signal generated .
  • a laser beam in which the diameter of the cross section is of the order of hundreds of microns.
  • the semiconductor device according to the invention instead allows the qualification of the device by using a laser signal without the need to resort to optical focusing systems and without affecting the validity of the information obtained relating to the response of the device in case of exposure to ionizing radiation.
  • the device comprises the following elements:
  • a substrate 1 of semiconductor material for example of doped silicon p or n for creating electrical charges in response to the passage of ionizing radiation therethrough ;
  • a first electrode 2 placed on a first surface of the substrate, doped in an opposite manner to the substrate 1;
  • a metal layer 3 placed in contact with one of the electrodes, with a reading electronics 4 and characterized in that said metal layer 3 comprises at least one slit 8 having at least one dimension equal to or less than 20 pm.
  • the slit 8 may have any geometrical shape provided that, having identified two main axes, it does not exceed the length of 20 pm in the direction of at least one of these.
  • the slits 8 It is not essential that the slits 8 respect a minimum size, rather this is limited by the accuracy tha t the manufacturing process can achieve.
  • Such a minimum size of the sl its 8 should in any case ensure tha t the laser signa l 6 can reach the first electrode 2, and therefore cannot be less than 1/4 of the wave length of the laser signa l 6 used.
  • the slit or slits 8 has/have a minimum size of 1 pm or more, which is an optima l choice for the amp litude of the s igna 1 it genera tes .
  • the slit or slits has/have at least one dimension equa l to or less than 10 pm.
  • the slits 8 have an area equa l to or less than 200 pm 2 , preferab ly less than 100 pttf .
  • a further advantage of the present invention lies in that it is comp lete ly free, during the qua lification step, from the focusing properties of the laser signa l 6, since the determining e lement for charge deposition is precise ly the size of the slits 8 and therefore it is reproducib le.
  • the slits 8 are positioned at particularly significant points or where undesired effects may occur with respect to normal operation.
  • slits 8 in the central region of the device and/or at the furthest point from the reading system, as well as in the corners or in any case along the periphery of the main surface of the device.
  • the semiconductor materials 1 and 2 may be selected from: silicon, diamond, germanium, silicon carbide.
  • the metals 3 may be selected from: aluminum, titanium, gold, silver, and platinum.
  • the semiconductor device according to the present invention is advantageously achievable by the techniques known to those skilled in the art.
  • the device may be made from a semiconductor substrate 1 with a first electrode 2 capable of collecting the electrical charges created in the substrate 1, which electrode is placed on a first face of the substrate itself.
  • the metal layer 3, which covers said first electrode 2, is appli cable by a process including the following main steps:
  • a. providing a substrate 1 of semiconductor material capable of creating electrical charges in response to the passage of ionizing radiation therethrough , equipped with a t least a first electrode 2 for co l lecting the e lectrica l charges created in the substrate 1, where sa id first electrode 2 is arranged on a first surface of the substrate 1, and a second e lectrode 5 is arranged on a second surface of the substrate 1 opposed to sa id first surface;
  • the optica l paste should be p laced where the meta l layer is not desired. For this reason, the optica l paste should be deposited to form a figure having at least one dimension equa l to or less than 20 pm.
  • a semiconductor device may be advantageously used in a qua lification procedure which, by using a laser signa l, is able to acquire information on the measurabl e signa l during its exposure to ionizing radiation.
  • the qua lification of the device through the laser signa l is performed by simul ati ng the effect of ionizing radiation with the laser, and by studying the shape of the signa l read by the reading electronics 4.
  • the wavelength of the laser may range from 400 nm (below which the signa l does not penetrate into the materia l) up to about 2- 3000 nm, beyond which the laser does not generate enough ionization.
  • a signa l simi lar to that of an ionizing particle is genera ted.
  • Figure 4b shows the amplitude of the signal generated by a particle striking the square silicon detector with the circular optical window.
  • the detectors in question were previously i r radiated to perform a radiation resistance study.
  • the amplitude of the signal generated at the aperture 8 is smaller than the signal measured at the metal layer.

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

Selon l'invention, un dispositif de détecteur à semi-conducteur pour la détection d'un rayonnement ionisant comprend, en combinaison : un substrat (1) de matériau semi-conducteur apte à créer des charges électriques en réponse au passage d'un rayonnement ionisant à travers celui-ci; au moins une première électrode (2) apte à collecter les charges électriques générées dans le substrat (1), ladite électrode (2) étant disposée sur une première surface du substrat (1), une seconde électrode (1) étant disposée sur une seconde surface du substrat (1) opposée à la première; une couche métallique (3) pour fournir un contact électrique avec une électronique de lecture (4) placée en contact avec ladite première électrode (2). Selon l'invention, ladite couche métallique (3) comprend au moins une fente (8) ayant au moins une dimension égale ou inférieure à 20 µm.
PCT/IB2019/050870 2018-02-19 2019-02-04 Dispositif semi-conducteur pour la détection d'un rayonnement ionisant muni de fenêtres optiques micrométriques Ceased WO2019159032A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP19707491.7A EP3756034A1 (fr) 2018-02-19 2019-02-04 Dispositif semi-conducteur pour la détection d'un rayonnement ionisant muni de fenêtres optiques micrométriques

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT102018000002821A IT201800002821A1 (it) 2018-02-19 2018-02-19 Dispositivo a semiconduttore per la rivelazione di radiazione ionizzante dotato di finestre ottiche micrometriche
IT102018000002821 2018-02-19

Publications (1)

Publication Number Publication Date
WO2019159032A1 true WO2019159032A1 (fr) 2019-08-22

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2019/050870 Ceased WO2019159032A1 (fr) 2018-02-19 2019-02-04 Dispositif semi-conducteur pour la détection d'un rayonnement ionisant muni de fenêtres optiques micrométriques

Country Status (3)

Country Link
EP (1) EP3756034A1 (fr)
IT (1) IT201800002821A1 (fr)
WO (1) WO2019159032A1 (fr)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110253886A1 (en) * 2010-04-19 2011-10-20 Siemens Aktiengesellschaft X-Ray Detector Comprising A Directly Converting Semiconductor Layer And Calibration Method For Such An X-Ray Detector

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110253886A1 (en) * 2010-04-19 2011-10-20 Siemens Aktiengesellschaft X-Ray Detector Comprising A Directly Converting Semiconductor Layer And Calibration Method For Such An X-Ray Detector

Also Published As

Publication number Publication date
IT201800002821A1 (it) 2019-08-19
EP3756034A1 (fr) 2020-12-30

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