[go: up one dir, main page]

WO2019157556A1 - Actionneur de microlentille piézoélectrique - Google Patents

Actionneur de microlentille piézoélectrique Download PDF

Info

Publication number
WO2019157556A1
WO2019157556A1 PCT/AU2019/050111 AU2019050111W WO2019157556A1 WO 2019157556 A1 WO2019157556 A1 WO 2019157556A1 AU 2019050111 W AU2019050111 W AU 2019050111W WO 2019157556 A1 WO2019157556 A1 WO 2019157556A1
Authority
WO
WIPO (PCT)
Prior art keywords
piezoelectric
actuator
microlens
lens
actuation members
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/AU2019/050111
Other languages
English (en)
Inventor
Ssu-Han Chen
Chee Yee Kwok
Aron Michael
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NewSouth Innovations Pty Ltd
Original Assignee
NewSouth Innovations Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AU2018900447A external-priority patent/AU2018900447A0/en
Application filed by NewSouth Innovations Pty Ltd filed Critical NewSouth Innovations Pty Ltd
Publication of WO2019157556A1 publication Critical patent/WO2019157556A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/04—Mountings, adjusting means, or light-tight connections, for optical elements for lenses with mechanism for focusing or varying magnification
    • G02B7/08—Mountings, adjusting means, or light-tight connections, for optical elements for lenses with mechanism for focusing or varying magnification adapted to co-operate with a remote control mechanism
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/0004—Microscopes specially adapted for specific applications
    • G02B21/002—Scanning microscopes
    • G02B21/0024—Confocal scanning microscopes (CSOMs) or confocal "macroscopes"; Accessories which are not restricted to use with CSOMs, e.g. sample holders
    • G02B21/0052—Optical details of the image generation
    • G02B21/006—Optical details of the image generation focusing arrangements; selection of the plane to be imaged
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/04—Mountings, adjusting means, or light-tight connections, for optical elements for lenses with mechanism for focusing or varying magnification
    • G02B7/10—Mountings, adjusting means, or light-tight connections, for optical elements for lenses with mechanism for focusing or varying magnification by relative axial movement of several lenses, e.g. of varifocal objective lens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2041—Beam type
    • H10N30/2042—Cantilevers, i.e. having one fixed end
    • H10N30/2046—Cantilevers, i.e. having one fixed end adapted for multi-directional bending displacement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H10N30/063—Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H10N30/067—Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts

Definitions

  • the disclosure relates to microlens actuators, and in particular piezoelectric microlens actuators along with methods and an apparatus for actuating and/or controlling movement of a lens in an out-of-plane direction.
  • Micro-optics applications and miniaturised confocal microscopy require precise movement of a microlens in an out-of-plane direction.
  • Out-of-plane movement may be used to allow for auto-focus, optical zooming, changing the focal plane of a laser beam along the optical axis or other optical or camera applications.
  • Multiple aligned micro-lenses with each microlens being capable of out-of-plane movement in the optical axis is required to realize miniaturized cameras. Movements in an out-of-plane direction or in the z-axis that extends through the lens have been known to be provided through thermal or electrostatic actuation. Although thermal actuation operates at low voltage, it suffers from slow response time and large power consumption.
  • electrostatic actuation has a fast response time and low power consumption, it requires large actuation voltage and pliable mechanical platform to yield large displacement due to its low energy density. It would be valuable to find a way of providing out-of-plane movement with a fast or faster response time and a lower power consumption while.
  • a piezoelectric microlens actuator is disclosed.
  • the microlens actuator provides out-of-plane deflection. In some forms the microlens actuator minimises tilt while maximising out-of-plane deflection. In other forms the microlens actuator may control tilt.
  • an array of piezoelectric actuation members fabricated such that a voltage applied to any one piezoelectric actuation member results in a change of dimension of that piezoelectric actuation member, the piezoelectric actuation members engaged with a lens, the actuation members and the lens being configured such that the change in dimension of at least one piezoelectric actuation member results in movement of the lens out of a plane in which the array extends.
  • the microlens actuator comprises a lens support and an array of piezoelectric actuation members.
  • the piezoelectric actuation members are fabricated such that a voltage applied to any one of the piezoelectric actuation members results in a change of dimension of the piezoelectric layer of that piezoelectric actuation member resulting in a bending moment in an out-of-plane direction.
  • the piezoelectric actuation members extend from the lens support and engage with the lens support by a plurality of engagement elements.
  • the engagement elements and the lens support are configured such that the bending moment of any one of the piezoelectric actuation members results in a movement of the lens support in an out-of-plane direction.
  • the movement of the actuation members is a change in the length of the piezoelectric layer of the actuation member. That is, application of the voltage results in an expansion or contraction of the length of the piezoelectric layer which results in a bending moment and then in a movement of the lens support in the direction of the z-axis.
  • the movement of the lens support is out of plane in the facing direction of a lens supported by the lens support.
  • engagement members comprise biasing members, which can be in the form of springs.
  • the piezoelectric actuation members comprise a laminar structure including a piezoelectric layer and electrodes positioned such that application of voltage to the electrodes results in the change in dimension of the piezoelectric actuation members.
  • the piezoelectric layer and the electrodes are positioned such that a portion of the piezoelectric layer is intermediate the electrodes.
  • the actuator may have the benefits of providing substantial out-of-plane movement of the lens with minimal tilt at a relatively fast speed with lower energy requirements than some forms found in the prior art.
  • the actuator may have the benefit of controlling tilt at relatively fast speed with lower energy requirements than alternative actuators.
  • the actuator may simply provide an alternative actuation method than those known.
  • the actuator may find particular application in micro-optics applications specifically auto-focus applications and zooming applications in miniature cameras or confocal microscopy.
  • a method to enhance out of plane displacement ranges by manipulation of residual stress in a support layer is disclosed. It should also be appreciated that the lens actuator disclosed herein may find application in technologies not previously envisaged, due to its ability to maximise out-of- plane movement in response to the voltage applied to a piezoelectric layer.
  • Fig. 1 shows a perspective view of one embodiment of a microlens actuator of the present disclosure
  • Fig. 2 shows a plan view of the microlens actuator of Figure 1 ;
  • Fig. 3 shows an enlarged view of a section of the microlens actuator of Figure 1 ;
  • Fig. 4 shows a cross-sectional view of a piezoelectric actuation member of one embodiment of the present disclosure
  • Fig. 5 shows a cross-sectional view of a piezoelectric actuation member of one embodiment of the present disclosure
  • Fig. 6 shows deflection of the microlens holding platform in respect to the device surface plane (zero on the y-axis) at various electric field (E);
  • Fig. 7 shows deflection of the microlens holding platform in respect to the device surface plane (zero on the y-axis) at various electric field (E);
  • Fig. 8 shows deflection of a 600pm long 100p wide micro-cantilever actuator at various electric fields compared to FEM results.
  • a piezoelectric microlens actuator comprising: a lens support; an array of actuation members including a piezoelectric layer, the actuation members fabricated such that a voltage applied to an actuation member results in an out-of- plane bending moment on that actuation member, the piezoelectric actuation members extending from the lens support and engaged with the lens support by a plurality of engagement elements, the engagement elements and the lens support being configured such that the change in bending moment of the actuation member results in movement of the lens support in the desired direction.
  • the array of actuation members comprise a plurality of actuation members spaced apart around the lens support.
  • the actuation members comprise a plurality of actuation members extending outwardly from proximal to a central point to form a wagon wheel shape.
  • the lens is supported at the central point.
  • each actuation member comprises an elongate piezoelectric beams extending outwardly from the lens support to engage the substrate.
  • the array of actuation members comprises between 4 and 12 actuation members. In some forms the array of actuation members comprises 6 actuation members.
  • the actuation members extend from and are spaced apart around the lens support such that there is an angle of between 30 and 90 degrees between longitudinal axes of the actuation members. In some forms the actuation members extend from and are spaced apart around the lens support such that there is an angle of 60 degrees between longitudinal axes of the actuation members.
  • the change in dimension of the piezoelectric layer of the actuation members is a change in the length of the piezoelectric actuation member.
  • the change in dimension of the piezoelectric layer results in a bending moment on the actuation members and this bending moment results in a movement of the lens support in an out-of-plane direction.
  • the lens support is adapted to support a lens having two opposing faces and the movement of the lens support out-of-plane results in movement of the lens in the facing direction of one of the opposing faces.
  • the engagement members comprise biasing members.
  • the biasing members comprise springs.
  • the springs are shaped such that expansion or contraction of the piezoelectric actuation members results in movement of the lens support out-of-plane.
  • the springs comprise serpentine or torsional springs. In some forms the bending moment on the actuation members effect movement of the engagement members to move the lens.
  • the piezoelectric actuation members comprise a laminar structure including a piezoelectric layer and electrodes positioned with respect to the piezoelectric layer such that application of voltage to the electrodes results in a change in the bending moment of the piezoelectric actuation members.
  • the piezoelectric layer and the electrodes are positioned such that a portion of the piezoelectric layer is intermediate the electrodes.
  • the piezoelectric layer is sandwiched between electrodes and the bending moment direction is in the positive z-axis.
  • the electrodes are arranged in an interdigitated form, the bending moment direction is in the negative z-axis.
  • the laminar structure further comprises a support layer and an insulator layer.
  • the laminar structure comprises of ultra-high e-beam evaporated polysilicon as the support structural layer.
  • Figs 1 and 2 show an actuator arrangement for a first embodiment of a microlens actuator of the present disclosure.
  • the actuator arrangement 1 comprises a lens support 2 in the form of a holding platform.
  • the holding platform is an annular platform.
  • the lens support 2 is tangentially engaged with a plurality of engagement members 3.
  • the engagement members are biasing members in the form of serpentine springs.
  • Alternative engagement members and biasing members that provide a similar function are available for example the engagement members may be in the form of torsional springs or any spring that provides the necessary movement of the holding platform.
  • the engagement members 3 engage the holding platform at one end and at the other engage one of an array of actuation members 4.
  • the actuation members are elongate laminar beams positioned to extend outwardly from the lens support 2 and are engaged with the lens support 2 by means of the engagement members 3 at their proximal end 5.
  • the actuation members 4 extend from the engagement members 3 and across a substrate 6.
  • the actuation members 4 are engaged with the substrate at a distal end 7.
  • An electrical connection 8 is positioned at the perimeter of the substrate 6 in the illustrated form.
  • a serpentine spring 10 forms the engagement member 3 engaging the actuation member 4 with the holding platform 2.
  • the engagement member in the illustrated form extends substantially coplanar with and in line with the actuation members 4 and the substrate 6.
  • the actuation members 4 are in the form of laminar beams 12 having a plurality of layers.
  • the laminar beams comprise a support layer 13 with an insulator layer 14 deposited thereon.
  • Suitable insulating materials may include S1O2 or S13N4 and are not limited to it.
  • a piezoelectric layer 15 is deposited on the beam.
  • the piezoelectric material may be a lead-free piezoelectric material.
  • the piezoelectric material may alternatively or additionally be an inorganic piezoelectric material. .
  • the piezoelectric material may be one or more of: (Bi,Na)TiO3; (Ba,Ca)(Ti,Zr)O3; (K,Na)Nb0 3 , Pb(Zr,Ti)0 3 or PVDF.
  • the piezoelectric layer 15 is sandwiched between a positive electrode 17 and a negative electrode 18.
  • a voltage is applied between the electrodes an electric field is generated between the electrodes.
  • the piezoelectric layer 15 responds by expanding in the same direction as the electric field.
  • the expansion in the z-axis and contraction in the y-axis of the piezoelectric layer 15 produces a bending moment in the actuation member in the positive z-axis direction.
  • the deflection is related to the piezoelectric coefficient of the film and to the magnitude of the applied electric field.
  • polarisation leads to upward movement if the actuation member 4 is oriented as shown in the Figure.
  • the piezoelectric layer 15 is aligned with a series of electrode fingers in the form of positive electrode 17 and a negative electrode 18 that are interdigitated with one another.
  • a buffer layer may be required as a seed layer depending on the type of piezoelectric material used.
  • the amount of displacement range of the lens support is influenced by the initial residual moment of the structure.
  • this residual moment causes an initial deflection or deformation in the structure which restricts the displacement range of the actuator.
  • the residual stress of the support layer can be manipulated to alter the initial deflection or deformation of the structure.
  • a semi-crystalline ultra-high vacuum e-beam evaporated polysilicon film with a percentage of crystallization above 95% allows residual stress manipulation. This is possible by depositing between 450-500°C at a deposition rate of 50 - 100 nm/min and subsequently annealing the film at elevated temperatures to achieve a fully crystallized tensile film.
  • Fig 6 shows the actuation characteristic of the microlens actuator for three different residual moments, which determine the initial deflection of the actuator.
  • the gradient labelled“u” displayes the upward residual moment.
  • the gradient labelled“z” displays the zero residual moment.
  • the gradient labelled“d” displays the downward residual moment.
  • curve‘z’ Since the polarization of PZT dictates upward deflection, the displacement range that can be achieved is dz.
  • the actuator will have an initial upward deflection which reduces the displacement range to ⁇ u.
  • the displacement range ( ⁇ d) By manipulating the residual moment to cause an initial downward deflection, the displacement range ( ⁇ d) will be enhanced significantly.
  • a possible solution is by manipulating the residual stress of the SiO 2 and polysilicon films. A compressive stress in the S1O2 layer and tensile stress in the polysilicon structure is required in order to counteract the upward moment caused by the Ti/Pt and PZT films.
  • annealing temperature of the subsequent deposited film Ti+1
  • the annealing temperature of the subsequent deposited film Ti+1
  • the previous film annealing temperatures Ti
  • a thick UHVEEPoly film is deposited at 500 ° C substrate temperature on a silicon wafer with 0.5 pm S1O2 grown in wet oxidation. The measured thickness was 6.1 pm by a stylus profiler.
  • the deposition rate of UHVEEPoly is 200 nm/min, with a base pressure of 1 x10 -9 Torr and deposition pressure in the order of 10 -8 Torr.
  • the as-deposited UHVEEPoly film stress is determined to be around -50 MPa (compressive).
  • the film is annealed at 700 ° C in N2 ambient to obtain a tensile stress of 140 MPa.
  • a thick compressive SiO 2 film is needed to achieve a downward residual moment.
  • the ways to deposit SiO 2 films are either by RF magnetron sputtering or PECVD techniques.
  • the residual stress becomes more compressive after annealing at elevated temperatures.
  • PECVD oxide films the stress becomes more tensile after a long period of annealing. Due to a lengthy process of the PZT deposition at a high temperature in the subsequent steps, it is crucial for the SiO 2 film to maintain a fairly compressive stress to enable the downward residual moment once the structure is released. Therefore, the sputtered oxide is chosen to be part of the elastic structural layer in this work.
  • An optimized process for the sputtering of SiO 2 film is used to achieve the desired stress level and thickness.
  • the film is sputtered using a 4” diameter 99.995% fused quartz target.
  • the deposition distance is 6 cm, with an RF power of 150 W and Ar pressure of 15 mTorr.
  • the uniformity and refractive index is confirmed by optical waveguiding technique (Metricon 2010/M Prism Coupler).
  • the uniformity is less than 5% between the center and the edge of a 2” wafer.
  • the average thickness and refractive index are 2.25 miti and 1 .4473 respectively.
  • the SiO 2 film is annealed at 700°C to obtain a compressive stress of 1 10 MPa.
  • a bi-layer metal film consisting of Ti(15 nm)/Pt(100 nm) is then deposited by e-beam evaporation on the sputtered S1O2 layer as the bottom electrode.
  • the film deposition is followed by annealing at 650°C to control the film stress and to ensure a crack-free PZT film deposition after sintering.
  • a sol-gel PZT solution with Zr/Ti ratio of 52/48 and 10% excess Pb is spun at 4000 rpm, dried at 300°C for 5 min on a hot-plate, and crystallized at 650°C for 15 min in O2 ambient furnace to achieve approximately 1 15 nm thin- film. This process is consecutively repeated to build up approximately 2.2 pm thick PZT film.
  • the top electrode Ti(15 nm)/Pt(100 nm), is also deposited by the similar e-beam evaporation process as that of the bottom electrode.
  • the top electrode remained as- deposited without subsequent annealing step.
  • the top Ti/Pt electrode will be subjected to 300°C for approximately 30 mins for 1 pm PECVD Si02 deposition which conformally covers the step height of the top electrode for Al pad patterning. This is to avoid short-circuiting between the top and bottom electrodes.
  • the PECVD oxide on top of the actuators and microlens holding platform is etched away by RIE. Three micro-cantilever actuators of different lengths have also been fabricated on the same chip to characterize and verify the residual moment generated from the thin-films.
  • the stress manipulation can enhance the displacement by 36%.
  • the actuator is driven by a 1 Hz square-wave from 2 - 22 V (9.09 - 100 kV/cm) in which the displacement is measured by the vibrometer at a fixed point on the microlens holding platform.
  • the actuator has a measured displacement of 145 pm at the lens platform, which is about 9.8% higher than the simulated result considering constant d 3i coefficient.
  • the unloaded microlens actuator has a measured resonance frequency of 1 .961 kHz which is close to the simulated result of 1.934 kHz.
  • the methodology to enhance out-of-plane displacement range by residual stress manipulation can be applied across different MEMS actuator structures like micro-bridges or diaphragms.
  • the initial deflection of a PZT based micro-actuator can be modified due to stress manipulation of the polysilicon layer to enhance displacement without significantly influencing the resonance frequency.
  • Fig. 7 deflection of the microlens holding platform in respect to the device surface plane (zero on the y-axis) at various electric fields (E) is shown.
  • Fig. 8 shows deflection of a 600 ⁇ m long 100p wide micro-cantilever actuator at various electric fields compared to FEM results. It will be understood to persons skilled in the art that many other modifications may be made without departing from the spirit and scope of the actuator, method of

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Micromachines (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)

Abstract

Un réseau d'éléments d'actionnement piézoélectriques est fabriqué de telle sorte qu'une tension appliquée à un quelconque élément d'actionnement piézoélectrique entraîne un changement de dimension de cet élément d'actionnement piézoélectrique, les éléments d'actionnement piézoélectriques s'étendant à partir du support de lentille et venant en prise avec une lentille, les éléments d'actionnement et la lentille étant configurés de telle sorte que le changement de dimension d'au moins un élément d'actionnement piézoélectrique entraîne le déplacement de la lentille hors d'un plan dans lequel s'étend le réseau.
PCT/AU2019/050111 2018-02-13 2019-02-13 Actionneur de microlentille piézoélectrique Ceased WO2019157556A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AU2018900447A AU2018900447A0 (en) 2018-02-13 Piezoelectric microlens actuator
AU2018900447 2018-02-13

Publications (1)

Publication Number Publication Date
WO2019157556A1 true WO2019157556A1 (fr) 2019-08-22

Family

ID=67619653

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/AU2019/050111 Ceased WO2019157556A1 (fr) 2018-02-13 2019-02-13 Actionneur de microlentille piézoélectrique

Country Status (1)

Country Link
WO (1) WO2019157556A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6133986A (en) * 1996-02-28 2000-10-17 Johnson; Kenneth C. Microlens scanner for microlithography and wide-field confocal microscopy
US20060056076A1 (en) * 2004-09-16 2006-03-16 Sony Corporation Movable lens mechanism
AU2003297988B2 (en) * 2002-12-18 2007-09-13 Symbol Technologies, Inc. Miniature auto focus piezo actuator system
US7936527B2 (en) * 2009-07-28 2011-05-03 E-Pin International Tech Co., Ltd. Auto focus lens module with piezoelectric actuator
US20130114149A1 (en) * 2010-07-05 2013-05-09 Aron Michael Piezo-electric based micro-electro-mechanical lens actuation system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6133986A (en) * 1996-02-28 2000-10-17 Johnson; Kenneth C. Microlens scanner for microlithography and wide-field confocal microscopy
AU2003297988B2 (en) * 2002-12-18 2007-09-13 Symbol Technologies, Inc. Miniature auto focus piezo actuator system
US20060056076A1 (en) * 2004-09-16 2006-03-16 Sony Corporation Movable lens mechanism
US7936527B2 (en) * 2009-07-28 2011-05-03 E-Pin International Tech Co., Ltd. Auto focus lens module with piezoelectric actuator
US20130114149A1 (en) * 2010-07-05 2013-05-09 Aron Michael Piezo-electric based micro-electro-mechanical lens actuation system

Similar Documents

Publication Publication Date Title
US8139280B2 (en) MEMS hierarchically-dimensioned deformable mirror
JP5224617B2 (ja) 圧電アクチュエータ、可変容量コンデンサ及び光偏向素子
US7215066B2 (en) Piezoelectric actuator and micro-electromechanical device
JP5951640B2 (ja) マイクロメカニカルデバイス
US6108121A (en) Micromachined high reflectance deformable mirror
US8605374B2 (en) High speed piezoelectric optical system with tunable focal length
US9076961B2 (en) Energy harvesting with a micro-electro-machanical system (MEMS)
WO2006110908A1 (fr) Micro-actionneur possedant plusieurs degres de liberte
Chen et al. Design and modeling of piezoelectrically driven micro-actuator with large out-of-plane and low driving voltage for micro-optics
CN1493897A (zh) 用于光子晶体的短杆可调节共振腔的方法和结构
JP3723431B2 (ja) マイクロ電気機械光学デバイス
JP2019028439A (ja) 形状記憶合金薄膜アクチュエータアレイによるオートフォーカス駆動機構
US7026697B2 (en) Microstructures comprising a dielectric layer and a thin conductive layer
Chen et al. A fast response MEMS piezoelectric microlens actuator with large stroke and low driving voltage
WO2019157556A1 (fr) Actionneur de microlentille piézoélectrique
US7046411B1 (en) Tensile-stressed microelectromechanical apparatus and micromirrors formed therefrom
Sette et al. Transparent piezoelectric transducers for large area ultrasonic actuators
P. Bruno et al. Fabrication of an Adaptive Micro Fresnel Mirror Array
Zhu et al. Membrane microcantilever arrays fabrication with PZT thin films for nanorange movement
KR100795012B1 (ko) 복수 층으로 구성된 전극을 갖는 멤스 구조물 및 그 제조방법
JP2023548930A (ja) 能動的に変形可能なメタミラー
CN1389749A (zh) 集成铁电微镜式光开关
Yang et al. Concept, modeling, and fabrication techniques for large-stroke piezoelectric unimorph deformable mirrors
US20220246834A1 (en) Method of manufacturing a curved ceramic structure
Kamiya et al. Design and manufacturing of micromechanism elements of 2-DOF micromanipulator

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19754130

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19754130

Country of ref document: EP

Kind code of ref document: A1