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WO2019150683A1 - Substrate cleaning device, substrate processing device, ultrasonic cleaning fluid supply device, and recording medium - Google Patents

Substrate cleaning device, substrate processing device, ultrasonic cleaning fluid supply device, and recording medium Download PDF

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Publication number
WO2019150683A1
WO2019150683A1 PCT/JP2018/041115 JP2018041115W WO2019150683A1 WO 2019150683 A1 WO2019150683 A1 WO 2019150683A1 JP 2018041115 W JP2018041115 W JP 2018041115W WO 2019150683 A1 WO2019150683 A1 WO 2019150683A1
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WO
WIPO (PCT)
Prior art keywords
substrate
cleaning liquid
nozzle
ultrasonic cleaning
ultrasonic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/041115
Other languages
French (fr)
Japanese (ja)
Inventor
知淳 石橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2018014526A external-priority patent/JP2021057355A/en
Priority claimed from JP2018049149A external-priority patent/JP2021057356A/en
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of WO2019150683A1 publication Critical patent/WO2019150683A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00Cleaning by methods involving the use of tools
    • B08B1/30Cleaning by methods involving the use of tools by movement of cleaning members over a surface
    • B08B1/32Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
    • B08B1/36Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members rotating about an axis orthogonal to the surface
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a substrate cleaning apparatus, a substrate processing apparatus, an ultrasonic cleaning liquid supply apparatus, and a recording medium.
  • Patent Documents 1 and 2 Conventionally, an apparatus for cleaning a semiconductor substrate using ultrasonic waves is known (for example, Patent Documents 1 and 2).
  • a substrate rotating mechanism that holds and rotates a substrate, and a nozzle that ejects an ultrasonic cleaning liquid toward the rotated substrate, the nozzle being perpendicular to the substrate.
  • a substrate cleaning apparatus that can be swiveled in a plane and that can be swiveled in a plane parallel to the substrate.
  • the nozzle sprays an ultrasonic cleaning liquid onto the edge and / or bevel of the substrate.
  • the nozzle can move up and down.
  • the nozzle can be raised to a position where the ultrasonic cleaning liquid is sprayed on the upper surface of the substrate and can be lowered to a position where the ultrasonic cleaning liquid is sprayed on the lower surface of the substrate.
  • the nozzle can be swung in a plane perpendicular to the substrate, so that an ultrasonic cleaning liquid can be sprayed from the inside of the substrate toward the outer periphery.
  • the nozzle sprays an ultrasonic cleaning liquid onto the substrate rotation mechanism.
  • a cleaning tool for cleaning the surface of the substrate while contacting the substrate while rotating is provided, and the nozzle sprays an ultrasonic cleaning liquid onto the cleaning tool.
  • the angle formed between the jet direction of the ultrasonic cleaning liquid from the nozzle and the longitudinal direction of the cleaning tool is greater than 0 degree and less than 90 degrees.
  • the nozzle sprays a mist-like ultrasonic cleaning liquid.
  • the substrate rotating mechanism holds the substrate in a non-horizontal direction.
  • the substrate rotating mechanism rotates the substrate while holding the substrate in a horizontal direction, and the nozzle is fixed to a first shaft extending in a vertical direction, and the first shaft rotates about its axis, thereby
  • the nozzle preferably swivels in a plane horizontal to the substrate.
  • the substrate rotation mechanism holds and rotates the substrate in the horizontal direction, the nozzle is fixed to a second shaft extending in the horizontal direction, and the second shaft rotates about its axis, thereby
  • the nozzle preferably swivels in a plane perpendicular to the substrate.
  • the substrate is held and rotated by the substrate rotation mechanism, the nozzle communicating with the ultrasonic cleaning liquid source is raised to a position higher than the upper surface of the substrate, and the substrate Moving the nozzle inwardly in the horizontal direction, and further rotating the nozzle so that the nozzle outlet faces in an orientation having an acute incident angle with respect to an edge of the upper surface of the substrate; Spraying an ultrasonic cleaning liquid toward the upper surface of the substrate; moving the nozzle outward in the horizontal direction of the substrate; lowering the nozzle to a position lower than the lower surface of the substrate; The nozzle is moved inward in the direction, and the nozzle outlet is oriented in a direction having an acute incident angle with respect to the edge of the lower surface of the substrate.
  • the housing includes: a vibrating unit that generates an ultrasonic cleaning liquid by applying ultrasonic waves to the cleaning liquid; and a casing that stores the generated ultrasonic cleaning liquid.
  • An ultrasonic cleaning liquid supply apparatus is provided in which at least a part of the surface in contact with the ultrasonic cleaning liquid is made of a conductive fluororesin. With such a configuration, charging of the ultrasonic cleaning liquid can be suppressed.
  • the conductive fluororesin may be a fluororesin containing carbon nanotubes.
  • the fluororesin may be PTFE, PCTFE, or PFA.
  • At least a part of the portion where the ultrasonic cleaning liquid is sprayed has higher heat dissipation than the conductive fluororesin.
  • at least a part of the portion to which the ultrasonic cleaning liquid is sprayed is made of sapphire, quartz, or PTFE containing carbon nanotubes.
  • a bias may be applied to the portion of the casing made of the conductive fluororesin.
  • a substrate cleaning apparatus comprising: a substrate rotating mechanism that rotates a substrate; and the ultrasonic cleaning liquid supply device that supplies the ultrasonic cleaning liquid to the rotated substrate.
  • a vibration unit that generates ultrasonic cleaning liquid by applying ultrasonic waves to the cleaning liquid, a casing that stores the generated ultrasonic cleaning liquid, and at least a part of the casing.
  • a substrate rotating mechanism for rotating the substrate immersed in the ultrasonic cleaning liquid housed in the body, and at least a part of the surface of the housing that contacts the ultrasonic cleaning liquid is made of a conductive fluororesin.
  • a substrate cleaning apparatus is provided.
  • the step of generating the ultrasonic cleaning liquid by applying ultrasonic waves to the cleaning liquid, and the inside of the housing in which at least a part of the surface in contact with the ultrasonic cleaning liquid is made of a conductive fluororesin A step of immersing the substrate in the ultrasonic cleaning liquid contained in the substrate, and a step of cleaning the substrate by rotating the substrate immersed in the ultrasonic cleaning liquid to flow the cleaning liquid.
  • a substrate cleaning method is provided.
  • an ultrasonic cleaning liquid supply device for supplying an ultrasonic cleaning liquid to which ultrasonic waves are applied to the substrate surface, wherein the flow path for receiving the ultrasonic cleaning liquid from the outside.
  • a housing provided with an opening at a lower position, and at least a part of the upper surface of the bottom surface in contact with the ultrasonic cleaning liquid and the side surface of the opening in the housing includes a conductive fluororesin containing carbon nanotubes
  • An ultrasonic cleaning liquid supply device is provided in which the other surface is a conductive material.
  • a substrate processing apparatus including a substrate polishing apparatus for polishing a substrate and the above-described substrate cleaning apparatus for cleaning a polished substrate.
  • FIG. 1 is a perspective view showing a schematic configuration of a substrate cleaning apparatus 4 according to a first embodiment. 1 is a top view showing a schematic configuration of a substrate cleaning apparatus 4 according to a first embodiment.
  • FIG. 1 is a perspective view showing a schematic configuration of a substrate cleaning apparatus 4 according to a first embodiment.
  • 1 is a top view showing a schematic configuration of a substrate cleaning apparatus 4 according to a first embodiment.
  • FIG. 5 is a flowchart showing an example of processing operation of the substrate cleaning apparatus 4.
  • FIG. The front view which shows schematic structure of the board
  • FIG. 1 is a schematic top view of a substrate processing apparatus according to an embodiment.
  • substrate cleaning apparatus 4 which concerns on 1st Embodiment.
  • substrate cleaning apparatus 4 which concerns on 1st Embodiment.
  • the figure which shows typically schematic structure of the ultrasonic cleaning fluid supply apparatus 43 ' which is a modification of FIG.
  • the problems of the first to third embodiments are a substrate cleaning apparatus having a high cleaning power, a substrate processing apparatus provided with such a substrate cleaning apparatus, and a program for performing such substrate cleaning. It is to provide a recording medium. As will be described in detail below, according to the first to third embodiments, since the nozzle for injecting the ultrasonic cleaning liquid can be swung, a wide area of the substrate can be cleaned and the cleaning power is improved.
  • FIG. 1 is a schematic top view of a substrate processing apparatus according to an embodiment.
  • This substrate processing apparatus is used in the manufacturing process of a magnetic film in a semiconductor wafer having a diameter of 300 mm or 450 mm, a flat panel, an image sensor such as a CMOS (Complementary Metal Oxide Semiconductor) or a CCD (Charge Coupled Device), or an MRAM (Magnetoresistive Random Access Memory).
  • CMOS Complementary Metal Oxide Semiconductor
  • CCD Charge Coupled Device
  • MRAM Magnetic Random Access Memory
  • the shape of the substrate is not limited to a circle, but may be a rectangular shape (square shape) or a polygonal shape.
  • FIG. 1A is an enlarged side view of the substrate W.
  • the “edge” of the substrate W refers to the flat portion Wa near the outer periphery of the substrate surface, and more specifically, the flat portion Wa within a predetermined distance from the edge of the substrate W. Can do.
  • the “bevel” of the substrate W is a curved surface portion Wb (FIG. 2B) having an angle from the substrate surface outside the edge, or a chamfered portion Wc and a side surface portion Wd (FIG. 2A). Refers to that.
  • a region including both “edge” and “bevel” is referred to as “peripheral region”.
  • the substrate processing apparatus of the present embodiment includes a substantially rectangular housing 1, a load port 2 on which a substrate cassette for stocking a large number of substrates is placed, and one or a plurality of (four in the embodiment shown in FIG. 1) substrates.
  • a polishing apparatus 3, one or a plurality of (two in the embodiment shown in FIG. 1) substrate cleaning apparatus 4, a substrate drying apparatus 5, transport mechanisms 6 a to 6 d, and a control unit 7 are provided.
  • the load port 2 is disposed adjacent to the housing 1.
  • the load port 2 can be equipped with an open cassette, a SMIF (Standard Mechanical Interface) pod, or a FOUP (Front Opening Unified Pod).
  • SMIF pods and FOUPs are sealed containers that can maintain an environment independent of the external space by accommodating a substrate cassette inside and covering with a partition wall. Examples of the substrate include a semiconductor wafer.
  • a substrate polishing apparatus 3 for polishing the substrate, a substrate cleaning apparatus 4 for cleaning the polished substrate, and a substrate drying apparatus 5 for drying the cleaned substrate are accommodated in the housing 1.
  • the substrate polishing apparatus 3 is arranged along the longitudinal direction of the substrate processing apparatus, and the substrate cleaning apparatus 4 and the substrate drying apparatus 5 are also arranged along the longitudinal direction of the substrate processing apparatus.
  • Each of the substrate cleaning device 4 and the substrate drying device 5 is a substantially rectangular housing (not shown), and can be opened and closed by a shutter mechanism, and the substrate to be processed is opened from an opening / closing portion provided in the housing portion. It may be configured to take in and out. Alternatively, as a modified embodiment, the substrate cleaning device 4 and the substrate drying device 5 may be integrated, and the substrate cleaning process and the substrate drying process may be performed continuously in one unit.
  • the substrate cleaning device 4 performs contact cleaning using a pen-type cleaning tool and non-contact cleaning using ultrasonic cleaning water.
  • contact cleaning using a pen-type cleaning tool refers to contacting the lower end contact surface of a cylindrical pen-type cleaning tool extending in the vertical direction with a substrate in the presence of cleaning liquid, and rotating the cleaning tool. However, it is moved in one direction to scrub the surface of the substrate.
  • the substrate drying apparatus 5 includes a spin drying unit that blows IPA vapor from a moving spray nozzle toward a horizontally rotating substrate to dry the substrate, and further rotates the substrate at high speed to dry the substrate by centrifugal force. Can be used.
  • a transport mechanism 6a is arranged in a region surrounded by the load port 2 and the substrate polishing apparatus 3 and the substrate drying apparatus 5 located on the load port 2 side. Further, a transport mechanism 6 b is arranged in parallel with the substrate polishing apparatus 3, the substrate cleaning apparatus 4 and the substrate drying apparatus 5. The transport mechanism 6a receives the substrate before polishing from the load port 2 and delivers it to the transport mechanism 6b, or receives the dried substrate taken out from the substrate drying apparatus 5 from the transport mechanism 6b.
  • a transfer mechanism 6 c for transferring the substrate between the substrate cleaning apparatuses 4 is disposed, and between the substrate cleaning apparatus 4 and the substrate drying apparatus 5, the substrate cleaning apparatus 4 and the substrate drying are disposed.
  • a transport mechanism 6c that transfers substrates between the apparatuses 5 is disposed.
  • a control unit 7 that controls the movement of each device of the substrate processing apparatus is disposed inside the housing 1.
  • This embodiment demonstrates using the aspect by which the control part 7 is arrange
  • the control unit 7 as in an embodiment described later, the operation of the spindle 41 that holds and rotates the substrate, the discharge start and end timing of the nozzle that ejects the ultrasonic cleaning liquid toward the substrate, or the nozzle It is also possible to control the vertical movement and the swiveling movement in the vertical plane.
  • the control unit may include a memory that stores a predetermined program, a CPU (Central Processing Unit) that executes the program in the memory, and a control module that is realized by the CPU executing the program.
  • the control module is configured so that the control unit can communicate with a host controller (not shown) that performs overall control of the substrate processing apparatus and other related apparatuses, and can exchange data with a database included in the host controller.
  • the storage medium constituting the memory stores various programs such as various setting data and processing programs.
  • a known medium such as a computer-readable memory such as ROM or RAM, or a disk-shaped storage medium such as a hard disk, CD-ROM, DVD-ROM, or flexible disk can be used.
  • FIG. 2A to 2D are a perspective view, a top view, and a side view, respectively, showing a schematic configuration of the substrate cleaning apparatus 4 according to the first embodiment.
  • the substrate cleaning device 4 includes a spindle 41 and an ultrasonic cleaning liquid supply device 42, which are housed in a casing (not shown) having a shutter. Each part in the substrate cleaning apparatus 4 is controlled by the control unit 7 in FIG.
  • the spindle 41 supports the peripheral edge of the substrate W with the surface facing up, and rotates in a horizontal plane. More specifically, the peripheral portion of the substrate W is positioned in a gripping groove formed on the outer peripheral side surface of the top 41a provided on the upper portion of the spindle 41 and pressed inward to rotate (spin) the top 41a. W rotates.
  • frame is rephrased as a “gripping part” for gripping the substrate.
  • the “spindle” can also be called a “roller”.
  • the control unit 7 in FIG. 1 controls the rotation direction and the number of rotations of the spindle 41.
  • the rotation speed may be constant or variable.
  • a cup (not shown) that is outside the spindle 41 and covers the periphery of the substrate W may be provided in order to prevent the ultrasonic cleaning liquid described later from scattering.
  • the cup may be configured such that a downflow airflow supplied into the unit from an FFU above the cleaning unit (not shown) passes through a hole provided in the cup and escapes downward. By comprising in this way, it can prevent more reliably that a washing
  • the ultrasonic cleaning liquid supply device 42 includes a support shaft 431, a movable shaft 432, a head 433, a turning shaft 434, and a nozzle 435.
  • the support shaft 431 extends in the vertical direction and is fixed.
  • the movable shaft 432 extends upward from the upper portion of the support shaft 431, and can move up and down, and can rotate (rotate about an axis, the same applies hereinafter). When the vertical movement of the nozzle 435 is unnecessary, the support shaft 431 and the movable shaft 432 may be integrated.
  • the head 433 is fixed to the upper end of the movable shaft 432. Further, a pivot shaft 434 extending in the horizontal direction passes through the head 433.
  • the nozzle 435 is attached to the tip of the head 433. It can be said that the nozzle 435 is attached to the movable shaft 432 via the head 433, and can be said to be attached to the turning shaft 434 via the head 433.
  • the nozzle 435 sprays the cleaning liquid toward the rotated substrate W.
  • cleaning liquid there is no limitation on the type of cleaning liquid, and it may be, for example, DIW or pure water, or may be a chemical liquid, and degassed water and gas components that have been degassed with respect to DIW or pure water are dissolved. Gas-dissolved water may be used.
  • the chemical liquid include cleaning liquids such as weak ozone water, SC1, SC2, etching liquid, and low-concentration carbonated water.
  • the temperature of the cleaning liquid is not limited, and the temperature may be adjustable (for example, from about 0 degrees Celsius to about 80 degrees Celsius).
  • a vibrator (not shown) is provided inside the nozzle 435 or the head 433, and a cleaning liquid to which ultrasonic waves are applied (hereinafter also referred to as ultrasonic cleaning liquid) is ejected.
  • a cleaning liquid to which ultrasonic waves are applied hereinafter also referred to as ultrasonic cleaning liquid
  • the frequency of the ultrasonic wave is not limited, and may be, for example, a high frequency (about 800 kHz) to a very high frequency (about 5 MHz). In general, the higher the frequency, the smaller foreign particles (particles) can be removed.
  • the turning shaft 434 rotates, so that the nozzle 435 held by the head 433 can turn in a vertical plane (in other words, in a plane perpendicular to the substrate W) (broken line in FIG. 2C).
  • this turning is also referred to as longitudinal turning.
  • the ultrasonic cleaning liquid can be ejected from the side closer to the nozzle 435 to the side farther from the substrate W by such vertical turning about the turning axis 434.
  • the ultrasonic cleaning liquid can be ejected from end to end of the substrate W by turning in the vertical direction.
  • the nozzle 435 held by the head 433 can turn in a horizontal plane (in other words, in a plane parallel to the substrate W) (see the broken line in FIG. 2B, hereinafter). This turning is also called a lateral turning).
  • the ultrasonic cleaning liquid can be ejected in an arc shape from the left side to the right side of the turning shaft 434 in the substrate W by such a lateral turning with the movable shaft 432 as an axis.
  • the angle in the vertical plane of the nozzle 435 (the angle formed by the ejection direction and the movable shaft 432) is constant.
  • the position where the ultrasonic cleaning liquid is deposited on the surface of the substrate W can also be changed by changing the height of the nozzle 435.
  • the ultrasonic cleaning liquid can be supplied to a desired position according to the spray pressure of various ultrasonic cleaning liquids. Further, the position where the ultrasonic cleaning liquid is deposited on the substrate may be scanned by changing the height of the nozzle 435 and / or the angle of vertical rotation during cleaning.
  • the nozzle 435 held by the head 433 is movable from a position higher than the upper surface of the substrate W to a position lower than the upper surface of the substrate W as the movable shaft 432 moves up and down.
  • the ultrasonic cleaning liquid is jetted onto the upper surface of the substrate W (FIG. 2D). That is, as shown in FIG. 2D, the movable shaft 432 moves up and down and can be turned in the vertical direction.
  • the nozzle 435 is lowered to a position lower than the lower surface of the substrate W, the ultrasonic cleaning liquid is jetted onto the lower surface of the substrate W (FIG. 3).
  • the spraying of the ultrasonic cleaning liquid from the end to the end of the lower surface of the substrate W may be realized only by the vertical rotation of the nozzle 435. You may implement
  • Each member of the ultrasonic cleaning liquid supply device 42 is controlled by a nozzle moving mechanism (not shown), and the nozzle 435 moves.
  • the nozzle moving mechanism includes, for example, a driving mechanism that generates a driving force such as a cylinder or a motor, and the driving force from the driving mechanism is used to raise, lower, rotate, and rotate the movable shaft 432. It can be set as the mechanism containing the conversion mechanism (For example, a link mechanism, a planetary gear mechanism, etc.) which converts into rotation of this.
  • the ultrasonic cleaning liquid can be sprayed over a wide area of the substrate W.
  • the edge and bevel of the substrate W can be cleaned by moving the movable shaft 432 up and down and turning in the vertical direction.
  • the ultrasonic cleaning liquid can be sprayed onto the edge of the upper surface of the substrate W by raising the nozzle 435 to a position higher than the upper surface of the substrate W and turning the nozzle 435 in a vertical direction so that the nozzle 435 is slightly downward (FIG. 4A). ).
  • the ultrasonic cleaning liquid can be sprayed onto the edge of the lower surface of the substrate W by lowering the nozzle 435 to a position lower than the upper surface of the substrate W and turning it vertically so that the nozzle 435 is slightly upward (FIG. 4B). Further, the ultrasonic cleaning liquid can be sprayed onto the bevel of the substrate W by setting the nozzle 435 to the same height as the substrate W and turning the nozzle 435 in the vertical direction so that the nozzle 435 is horizontally oriented (FIG. 4C).
  • the mechanism for moving the nozzle 435 in the vertical direction, the horizontal direction, and the vertical movement is not limited to that described above.
  • the ultrasonic cleaning liquid When cleaning the substrate W, the ultrasonic cleaning liquid is sprayed onto the substrate W while rotating the substrate W and rotating the nozzle 435 in the vertical direction and / or in the horizontal direction. At this time, various controls such as changing the output, the scanning speed, the flow rate, and the amount of dissolved gas may be performed according to the ejection position (position where the ultrasonic cleaning liquid is deposited on the substrate W).
  • the support shaft 431 and the movable shaft 432 may be connected by a pivot shaft 436 extending in the horizontal direction.
  • the movable shaft 432 can turn in the vertical plane with respect to the support shaft 431 with the turning shaft 436 as an axis.
  • the ultrasonic cleaning liquid can be sprayed from the inner side (side closer to the center) to the outer periphery (side closer to the edge) of the substrate W (FIG. 5B).
  • the substrate is cleaned using an ultrasonic cleaning liquid. Therefore, fine particles can be removed appropriately.
  • the ultrasonic cleaning liquid contaminated by the cleaning of the substrate W can be quickly discharged without going to the inside of the substrate W, and the cleaning power is further improved.
  • FIG. 5C is a flowchart illustrating an example of the processing operation of the substrate cleaning apparatus 4.
  • a command may be given to the substrate cleaning apparatus 3 (particularly a mechanism for moving the spindle 41 and the nozzle 435) from the control unit 7 or another computer so as to perform part or all of this flowchart.
  • the command may be issued by executing a predetermined program.
  • the spindle 41 as the substrate rotating mechanism holds and rotates the substrate W (step S1).
  • the nozzle 435 communicating with the ultrasonic cleaning liquid source is raised to a position higher than the upper surface of the substrate W.
  • the movable shaft 432 rotates in the vertical plane with the rotation axis 436 as an axis, so that the nozzle 435 moves to the inner side in the horizontal direction of the substrate W.
  • the head 433 turns in the vertical plane around the turning shaft 434, so that the nozzle 435 faces outward.
  • the injection port of the nozzle 435 is oriented in a direction having an acute incident angle with respect to the edge of the upper surface of the substrate W (step S2).
  • an ultrasonic cleaning liquid is sprayed from the nozzle 435 toward the edge of the upper surface of the substrate W (step S3).
  • the incident angle of the ultrasonic cleaning liquid with respect to the surface of the substrate W is an acute angle.
  • the movable shaft 432 pivots in the vertical plane around the pivot shaft 436, whereby the nozzle 435 moves to the outside in the horizontal direction of the substrate W ( Step S4).
  • the nozzle 435 is lowered to a position lower than the lower surface of the substrate W.
  • the movable shaft 432 rotates in the vertical plane with the rotation axis 436 as an axis, so that the nozzle 435 moves to the inner side in the horizontal direction of the substrate W.
  • the head 433 turns in the vertical plane around the turning axis 434, so that the nozzle 435 is directed outward (step S5).
  • the injection port of the nozzle 435 is in a state in which it has an acute incident angle with respect to the edge of the lower surface of the substrate W.
  • the ultrasonic cleaning liquid is sprayed from the nozzle 435 toward the edge of the lower surface of the substrate W (step S6).
  • the incident angle of the ultrasonic cleaning liquid with respect to the back surface of the substrate W is an acute angle.
  • the movable shaft 432 pivots in the vertical plane with the pivot shaft 436 as an axis, whereby the nozzle 435 moves to the outside in the horizontal direction of the substrate W ( Step S7).
  • the nozzle 435 is raised to the same position as the substrate W.
  • the head 433 rotates in the vertical plane with the rotation axis 434 as an axis, so that the nozzle 435 is oriented horizontally and is in the state shown in FIG. 4C (step S8).
  • the ultrasonic cleaning liquid is sprayed from the nozzle 435 toward the bevel of the substrate W (step S9).
  • the substrate W is removed from the spindle 41 (step S10).
  • the nozzle 435 is capable of vertical turning and horizontal turning. Therefore, a wide region of the substrate W can be cleaned, and the cleaning power is improved.
  • the injection target of the ultrasonic cleaning liquid is not limited to the substrate W. Since the nozzle 435 can be turned in the vertical direction and the horizontal direction, the ultrasonic cleaning liquid can be sprayed onto a part of the substrate cleaning apparatus 4 (for example, the spindle 41 and the cup), and these cleanings are also possible.
  • a second embodiment to be described next relates to a substrate cleaning apparatus 4 including a roll-type cleaning member.
  • 6A to 6C are a perspective view, a top view, and a side view, respectively, showing a schematic configuration of a substrate cleaning apparatus 4 ′ according to the second embodiment.
  • a description will be given focusing on differences from the first embodiment.
  • the substrate cleaning apparatus 4 ′ includes a roll-type cleaning tool 451 and a roll-type cleaning tool 452 arranged immediately below the roll-type cleaning tool 451.
  • the roll-type cleaning tools 451 and 452 are elongated, and in one embodiment, desirably extend from the edge of the substrate W to the opposite edge and pass through the center of the substrate W. While the nozzle 435 rotates in the vertical direction and / or in the horizontal direction, the ultrasonic cleaning liquid is sprayed onto the substrate W (more specifically, the side closer to the nozzle 435 than the roll type cleaning tools 451 and 452), while the roll type cleaning tool 451. 452 cleans each surface while contacting the upper and lower surfaces of the substrate W, respectively.
  • the injection direction from the nozzle 435 may be parallel to the longitudinal direction of the roll-type cleaning tools 451 and 452, or may be vertical, but as shown in FIG. It is desirable that the angle formed by the longitudinal direction and the injection direction is greater than 0 degree and less than 90 degrees.
  • the rotation direction of the roll-type cleaning tool 451 may coincide with the injection direction from the nozzle 435. It does not have to be. However, considering the rapid supply of the ultrasonic cleaning liquid to the contact portion between the roll-type cleaning tool 451 and the substrate W and the quick discharge of the ultrasonic cleaning liquid that has passed through the contact portion, the rotation direction of the roll-type cleaning tool 451 and the nozzle It is desirable that the injection direction from 435 matches.
  • the ultrasonic cleaning liquid is sprayed onto the lower surface of the substrate W when the nozzle 435 is lowered to a position lower than the lower surface of the substrate W.
  • the rotation direction of the roll cleaning tool 452 and the spraying direction from the nozzle 435 coincide with each other. It does not have to match. However, it is desirable that they coincide with the upper surface of the substrate W.
  • the cleaning is performed not only with the ultrasonic cleaning liquid but also with the roll-type cleaning tools 451 and 452. Therefore, the cleaning power is improved.
  • the nozzle 435 can be turned in the vertical direction or the horizontal direction, the ultrasonic cleaning liquid can be sprayed onto the roll-type cleaning tools 451 and 452.
  • a roll-type cleaning tool having a length that is greater than the radius of the substrate and less than the diameter of the substrate is used as the roll-type cleaning tool 452 disposed immediately below the roll-type cleaning tool 451, a roll-type cleaning tool having a length that is greater than the radius of the substrate and less than the diameter of the substrate is used. You may make it contact a board
  • an inclination adjustment mechanism that freely adjusts the inclination of the roll cleaning tool 452 and an elevating unit that elevates and lowers the inclination adjustment mechanism with respect to the substrate are further provided.
  • the substrate W is held in the horizontal direction in mind.
  • a third embodiment described below holds the substrate W in a non-horizontal direction.
  • the non-horizontal direction includes a vertical direction (vertical direction) and a direction inclined at a predetermined angle with respect to a horizontal plane.
  • FIGS. 8A and 8B respectively, a front view and a side view showing a schematic configuration of a substrate cleaning apparatus 4 ′′ according to the third embodiment.
  • the substrate cleaning apparatus 4 ′′ includes two spindles 41 that rotate while holding the lower side of the substrate W, and two spindles 41 that rotate while holding the upper side. By arranging these spindles 41 in the same vertical plane, the substrate W is held in the vertical direction.
  • the substrate cleaning device 4 ′′ may include four ultrasonic cleaning liquid supply devices 42A to 42D.
  • the ultrasonic cleaning liquid supply device 42A is disposed vertically above the center of the substrate W and ejects the ultrasonic cleaning liquid downward from the nozzle 435A.
  • the ultrasonic cleaning liquid supply device 42B is disposed below the center of the substrate W in the vertical direction, and jets the ultrasonic cleaning liquid upward from the nozzle 435B.
  • the ultrasonic cleaning liquid supply device 42 ⁇ / b> C is disposed obliquely above the center of the substrate W, and ejects the ultrasonic cleaning liquid obliquely downward from the nozzle 435 ⁇ / b> C toward the center of the substrate W.
  • the ultrasonic cleaning liquid supply device 42D is disposed obliquely below the center of the substrate W, and jets the ultrasonic cleaning liquid obliquely upward from the nozzle 435D toward the center of the substrate W.
  • the ultrasonic cleaning liquid supply devices 42A to 42D has the structure described in the first embodiment, and is in a plane perpendicular to the substrate W with the pivot axis 434 as an axis. It is desirable to be able to turn and / or move up and down in a plane parallel to the substrate W with the movable shaft 432 as an axis.
  • the substrate cleaning device 4 ′′ only needs to include at least one ultrasonic cleaning liquid supply device 42, and the number and arrangement thereof are not particularly limited.
  • roll-type cleaning tools 451 and 452 may be provided as in the second embodiment (FIGS. 9A and 9B). Further, by not arranging the upper spindle 41 and the lower spindle 41 in the same vertical plane, the substrate W may be held in an oblique direction (FIG. 10), and in addition, a roll-type cleaning tool is provided. (Not shown). As described above, the substrate W may be held and rotated in a non-horizontal direction.
  • the ultrasonic cleaning liquid may be sprayed (sprayed) from the nozzle 435 in a mist form.
  • the ultrasonic cleaning liquid having vibration energy
  • particles on the surface of the substrate W can be removed while suppressing damage to the substrate W.
  • it is necessary to lower the frequency of ultrasonic waves for example, several tens of kHz to 500 kHz) to remove large particles. In this case, the substrate W may be damaged. Can be suppressed.
  • FIG. 12 is a perspective view showing a schematic configuration of a substrate cleaning apparatus 4 ′ ′′ that holds and rotates the substrate W with chuck claws.
  • the substrate cleaning apparatus 4 ′ ′′ includes a chuck claw 511 and a rotation drive shaft 512 instead of the spindle 41 in FIG. 2A and the like.
  • the chuck claw 511 is a holding member provided to hold the substrate W by holding the outer peripheral end (edge portion) of the substrate W. An interval is provided between adjacent chuck claws 511 that does not hinder the movement of a robot hand (not shown) that transports the substrate W.
  • the chuck claws 511 are each connected to the rotation drive shaft 512 so that the surface of the substrate W can be held horizontally.
  • the rotation drive shaft 512 can be rotated around an axis extending perpendicularly to the surface of the substrate W, and the substrate W can be rotated in a horizontal plane by rotation around the axis of the rotation drive shaft 512. ing.
  • the control unit 7 in FIG. 1 controls the rotation direction and the number of rotations of the rotation drive shaft 512.
  • the rotation speed may be constant or variable.
  • a rotary cup that covers the periphery of the substrate W outside the chuck claws 511 and rotates in synchronization with the rotation drive shaft 512 may be provided.
  • the ultrasonic cleaning liquid may be sprayed onto the chuck claws 511 and the rotating cup.
  • the flow of gas flowing into the housing from the FFU unit (not shown) provided in the upper part of the housing of the substrate cleaning apparatus 4 or the shutter mechanism for taking in and out the substrate provided in the housing is as follows.
  • the substrate cleaning device 4 can be discharged from the lower discharge portion of the housing, and a downflow can be formed in the housing.
  • the above-mentioned rotating cup may be provided with a discharge hole for discharging the drainage liquid, and the downflow is discharged from the discharge portion at the bottom of the housing through this discharge hole and the ultrasonic cleaning liquid is sprayed onto the rotating cup.
  • the washed drained liquid from the rotating cup is received from the discharge hole below the rotating cup into the liquid receiving container located below the rotating cup along the flow of the downflow airflow, and discharged. It is also possible to ensure that the tube is discharged.
  • particles that tend to adhere to the rotating cup and the substrate chuck claw 511 can be reliably removed to prevent re-contamination of the substrate, and the outer peripheral edge (edge portion) of the substrate can also be reliably secured. Expect to be washed.
  • the substrate W may be supported on the stage from below and the stage may be rotated.
  • a so-called pencil sponge type cleaning tool may be used instead of the roll type illustrated in FIG.
  • one surface (for example, the upper surface) of the substrate W may be cleaned with a pencil sponge type cleaning tool, and the other surface (for example, the lower surface) may be cleaned with a roll type cleaning tool.
  • the problem of the fourth and fifth embodiments is to provide an ultrasonic cleaning liquid supply device and a substrate cleaning device that can clean the substrate appropriately and reduce the risk of damaging the substrate.
  • the substrate can be properly cleaned, and the risk of damaging the substrate during cleaning is suppressed when charging the ultrasonic cleaning liquid when cleaning the substrate. Can be reduced.
  • reference numerals are assigned separately from the first to third embodiments.
  • FIG. 13 is a schematic top view of a substrate processing apparatus according to an embodiment.
  • This substrate processing apparatus is used in the manufacturing process of a magnetic film in a semiconductor wafer having a diameter of 300 mm or 450 mm, a flat panel, an image sensor such as a CMOS (Complementary Metal Oxide Semiconductor) or a CCD (Charge Coupled Device), or an MRAM (Magnetoresistive Random Access Memory).
  • CMOS Complementary Metal Oxide Semiconductor
  • CCD Charge Coupled Device
  • MRAM Magnetic Random Access Memory
  • the shape of the substrate is not limited to a circle, but may be a rectangular shape (square shape) or a polygonal shape.
  • the substrate processing apparatus includes a substantially rectangular housing 1, a load port 2 on which a substrate cassette for stocking a large number of substrates is placed, and one or a plurality (four in the embodiment shown in FIG. 13) of substrate polishing apparatuses 3.
  • One or a plurality of (two in the embodiment shown in FIG. 13) substrate cleaning device 4, a substrate drying device 5, transport mechanisms 6a to 6d, and a control unit 7 are provided.
  • the load port 2 is disposed adjacent to the housing 1.
  • the load port 2 can be equipped with an open cassette, SMIF (Standard Mechanical Interface) pod, or FOUP (Front Opening Unified Pod).
  • SMIF pods and FOUPs are sealed containers that can maintain an environment independent of the external space by accommodating a substrate cassette inside and covering with a partition wall. Examples of the substrate include a semiconductor wafer.
  • a substrate polishing apparatus 3 for polishing the substrate, a substrate cleaning apparatus 4 for cleaning the polished substrate, and a substrate drying apparatus 5 for drying the cleaned substrate are accommodated in the housing 1.
  • the substrate polishing apparatus 3 is arranged along the longitudinal direction of the substrate processing apparatus, and the substrate cleaning apparatus 4 and the substrate drying apparatus 5 are also arranged along the longitudinal direction of the substrate processing apparatus.
  • Each of the substrate cleaning device 4 and the substrate drying device 5 is a substantially rectangular housing (not shown), and can be opened and closed by a shutter mechanism, and the substrate to be processed is opened from an opening / closing portion provided in the housing portion. It may be configured to take in and out.
  • the substrate cleaning device 4 and the substrate drying device 5 may be integrated, and the substrate cleaning process and the substrate drying process may be performed continuously in one unit.
  • a plating apparatus for plating a substrate or a bevel polishing apparatus for polishing a bevel portion may be employed.
  • the substrate cleaning device 4 performs contact cleaning using a pen-type cleaning tool and non-contact cleaning using ultrasonic cleaning water.
  • contact cleaning using a pen-type cleaning tool refers to contacting the lower end contact surface of a cylindrical pencil-type cleaning tool extending in the vertical direction with a substrate in the presence of a cleaning liquid, and rotating the cleaning tool. However, it is moved in one direction to scrub the surface of the substrate.
  • the substrate drying apparatus 5 includes a spin drying unit that blows IPA vapor from a moving spray nozzle toward a horizontally rotating substrate to dry the substrate, and further rotates the substrate at high speed to dry the substrate by centrifugal force. Can be used.
  • a transport mechanism 6a is arranged in a region surrounded by the load port 2 and the substrate polishing apparatus 3 and the substrate drying apparatus 5 located on the load port 2 side. Further, a transport mechanism 6 b is arranged in parallel with the substrate polishing apparatus 3, the substrate cleaning apparatus 4 and the substrate drying apparatus 5. The transport mechanism 6a receives the substrate before polishing from the load port 2 and delivers it to the transport mechanism 6b, or receives the dried substrate taken out from the substrate drying apparatus 5 from the transport mechanism 6b.
  • a transfer mechanism 6 c for transferring the substrate between the substrate cleaning apparatuses 4 is disposed, and between the substrate cleaning apparatus 4 and the substrate drying apparatus 5, the substrate cleaning apparatus 4 and the substrate drying are disposed.
  • a transport mechanism 6c that transfers substrates between the apparatuses 5 is disposed.
  • a control unit 7 for controlling the movement of each device of the substrate processing apparatus is disposed inside the housing 1.
  • this embodiment demonstrates using the aspect by which the control part 7 is arrange
  • FIG. 1 is a diagrammatic representation of the control part 7 positioned inside the housing 1, it is not restricted to this, The control part 7 may be arrange
  • the substrate cleaning device 4 includes a substrate rotation mechanism 41, a pen cleaning mechanism 42, and an ultrasonic cleaning liquid supply device 43, which are housed in a housing 44 having a shutter 44a. Each part in the substrate cleaning apparatus 4 is controlled by the control unit 7 in FIG.
  • the substrate rotation mechanism 41 includes a chuck claw 411 and a rotation drive shaft 412.
  • the chuck claw 411 is a holding member provided to hold the substrate W by holding the outer peripheral end (edge portion) of the substrate W to be cleaned.
  • four chuck claws 411 are provided, and an interval is provided between adjacent chuck claws 411 that does not hinder the movement of a robot hand (not shown) that transports the substrate W.
  • the chuck claws 411 are each connected to the rotation drive shaft 412 so that the surface of the substrate W can be held horizontally.
  • the substrate W is held by the chuck claws 411 so that the surface WA of the substrate W faces upward.
  • the rotation drive shaft 412 can be rotated around an axis extending perpendicularly to the surface of the substrate W, and the substrate W can be rotated in a horizontal plane by rotation around the axis of the rotation drive shaft 412. ing.
  • the controller 7 controls the rotation direction and the number of rotations of the rotation drive shaft 412.
  • the rotation speed may be constant or variable.
  • the rotation outside of the substrate rotation mechanism 41 covers the periphery of the substrate W, and rotates.
  • a rotating cup that rotates in synchronization with 412 may be provided.
  • the rotary cup may be configured such that a downflow airflow supplied into the unit from an FFU above the cleaning unit (not shown) passes through a hole provided in the rotary cup and escapes downward. By comprising in this way, it can prevent more reliably that a washing
  • the pen cleaning mechanism 42 includes a pen-type cleaning tool 421, an arm 422 that supports the pen-type cleaning tool 421, a moving mechanism 423 that moves the arm 422, a cleaning liquid nozzle 424, a rinse liquid nozzle 425, and a cleaning device 426.
  • the pen-type cleaning tool 421 is, for example, a cylindrical PVA (for example, sponge) cleaning tool, and is disposed above the substrate W held by the chuck claws 411 so that the axis is perpendicular to the substrate W. .
  • the pen-type cleaning tool 421 has a lower surface that cleans the substrate W, and an upper surface that is supported by the arm 422.
  • the arm 422 is a flat bar-like member, and is typically arranged so that its longitudinal direction is parallel to the substrate W.
  • the arm 422 supports the pen-shaped cleaning tool 421 at one end so as to be rotatable around its axis, and a moving mechanism 423 is connected to the other end.
  • the moving mechanism 423 moves the arm 422 vertically up and down and swings the arm 422 in a horizontal plane.
  • the movement of the arm 422 in the horizontal direction by the moving mechanism 423 is such that the locus of the pen-type cleaning tool 421 draws an arc around the other end of the arm 422.
  • the moving mechanism 423 can swing the pen-type cleaning tool 421 between the center of the substrate W and the retracted position outside the substrate W as indicated by an arrow A.
  • the moving mechanism 423 is controlled by the control unit 7.
  • the cleaning liquid nozzle 424 supplies a cleaning liquid such as a chemical liquid or pure water when cleaning the substrate W with the pen-type cleaning tool 421.
  • the rinse liquid nozzle 425 supplies a rinse liquid such as pure water to the substrate W.
  • the cleaning liquid nozzle 424 and the rinsing liquid nozzle 425 are desirably provided not only for the front surface WA of the substrate W but also for the back surface WB. The supply timing and supply amount of the cleaning liquid and the rinse liquid are controlled by the control unit 7.
  • the cleaning device 426 is disposed outside the position where the substrate W is disposed, and the moving mechanism 423 can move the pen-type cleaning tool 421 onto the cleaning device 426.
  • the cleaning device 426 cleans the pen type cleaning tool 421.
  • the cleaning liquid is supplied from the cleaning liquid nozzle 424 onto the substrate W, and the lower surface of the pen-type cleaning tool 421 contacts the surface WA of the substrate W so that the arm 422 is provided. By swinging, the substrate W is physically contact-cleaned.
  • the ultrasonic cleaning liquid supply device 43 is disposed on the opposite side of the pen cleaning mechanism 42 with the substrate W interposed therebetween.
  • the ultrasonic cleaning liquid supply device 43 cleans the substrate W in a non-contact manner using a cleaning liquid to which ultrasonic waves are applied (hereinafter also referred to as an ultrasonic cleaning liquid).
  • This embodiment is characterized by the structure of the ultrasonic cleaning liquid supply device 43 and will be described in detail below.
  • FIG. 16 is a diagram schematically showing a schematic configuration of the ultrasonic cleaning liquid supply device 43.
  • the ultrasonic cleaning liquid supply device 43 includes an ultrasonic cleaning liquid generation device 70 and a nozzle unit 71.
  • the ultrasonic cleaning liquid generating apparatus 70 has a casing 81 and a vibrating part 82.
  • the casing 81 has a cavity opened at the bottom, and the cavity is tapered downward.
  • a channel 81 a is formed in a part of the housing 81.
  • the vibration unit 82 is disposed in a cavity inside the housing 81.
  • the cleaning liquid (before the ultrasonic wave is applied) is supplied into the casing 81 from the flow path 81 a of the casing 81.
  • the cleaning liquid may be, for example, pure water or a chemical liquid.
  • the vibration unit 82 generates ultrasonic cleaning liquid by applying ultrasonic vibration to the cleaning liquid.
  • the frequency of the ultrasonic wave may be a predetermined fixed frequency, or may be selected from a plurality of frequencies (for example, a high frequency of about 900 kHz and a low frequency of about 430 kHz).
  • the generated ultrasonic cleaning water is accommodated in the casing 81.
  • the nozzle unit 71 is connected to an opening in the housing 81 and sprays ultrasonic cleaning liquid toward the substrate W.
  • At least a part (preferably the entire part) of the surface (wetted part) in contact with the ultrasonic cleaning liquid in the casing 81 is made of a conductive material so as to have conductivity.
  • the conductive material carbon nanotubes are kneaded into a fluororesin such as PTFE (Poly Tetra Fluoro Ethylene), PCTFE (Poly Chloro Tri Furuoro Ethylene), PFA (Per Fluoroalkoxy Alkane), etc. That is suitable.
  • PTFE Poly Tetra Fluoro Ethylene
  • PCTFE Poly Chloro Tri Furuoro Ethylene
  • PFA Per Fluoroalkoxy Alkane
  • the length of the carbon nanotube fiber is 30 ⁇ m or more.
  • strength improves by forming the housing
  • the grounding can be canceled and a bias can be applied to the conductive portion.
  • the charged ultrasonic cleaning liquid can be intentionally supplied to the surface of the substrate W that has already been charged, and the charging of the surface of the substrate W is cancelled.
  • the conductive portion may be grounded or a positive charge may be applied.
  • At least a part (preferably the entire surface) of the nozzle portion 71 to which the ultrasonic cleaning liquid is sprayed is in contact with the ultrasonic cleaning liquid (preferably the whole) is made of a material having high thermal conductivity. It is preferable to use a material having a thermal conductivity equal to or higher than that of the conductive portion. More specifically, sapphire or quartz can be applied. In addition, since PTFE including carbon nanotubes has high thermal conductivity, PTFE including carbon nanotubes may be applied to both the casing 81 and the nozzle portion 71. Sapphire and PTFE are excellent in terms of chemical resistance, and quartz is excellent in that it is difficult to attenuate ultrasonic vibration.
  • the energy of ultrasonic waves may be absorbed by the nozzle part 71 and converted into heat, and the nozzle part 71 may store heat.
  • the temperature of the ultrasonic cleaning liquid may change between the substrate cleaned in the initial stage and the substrate cleaned after cleaning a large number of substrates, and the processing may become unstable. Further, even when a high-temperature ultrasonic cleaning liquid is used, if the heat of the ultrasonic cleaning liquid moves to the nozzle unit 71 and accumulates in the nozzle unit 71, the temperature of the ultrasonic cleaning liquid similarly changes and the processing becomes unstable. .
  • the temperature of the ultrasonic cleaning liquid sprayed onto the substrate W can be lowered, and a reduction in cleaning power can be suppressed.
  • FIG. 17 is a diagram schematically showing a schematic configuration of an ultrasonic cleaning liquid supply device 43 ′ which is a modification of FIG. 16.
  • the casing 81 of the ultrasonic cleaning liquid supply device 43 ′ has a cavity opened at the bottom, and an opening 81 c is provided on the bottom surface 81 b of the casing 81. Then, an ultrasonic cleaning liquid is ejected from the opening 81c toward the substrate W.
  • a portion close to the opening 81c from which the ultrasonic cleaning liquid is ejected more specifically, at least a part of the upper surface of the bottom surface 81b and the side surface of the opening 81c (preferably the whole ) Is made of a material with high heat dissipation, and the other surface is preferably made of a conductive material. Others are the same as FIG.
  • the inner surface of the casing 81 of the ultrasonic cleaning liquid supply device 43 (43 ') is made conductive. Therefore, charging of the ultrasonic cleaning liquid can be suppressed, and the risk of damaging the substrate W during cleaning can be reduced. Moreover, the heat dissipation of the inner surface of the portion where the ultrasonic cleaning liquid is ejected is increased. Therefore, the temperature of the ultrasonic cleaning liquid supplied to the substrate W can be lowered, and a reduction in cleaning power can be suppressed.
  • the aspect of the substrate cleaning apparatus 4 is not limited to that shown in FIGS.
  • the cleaning may be performed with a roll-type cleaning tool instead of the pen-type cleaning tool 421.
  • you may only wash
  • the substrate W instead of holding and rotating the substrate W with the chuck claws 411, the substrate W may be supported on the stage from below and the stage may be rotated, or the outer peripheral edge of the substrate W may be held with a roller. It may be rotated.
  • the ultrasonic cleaning liquid supply device 43 may be configured such that the ultrasonic cleaning liquid generated by the vibration unit 82 disposed outside the casing 81 is guided into the casing 81.
  • FIG. 17A is a diagram schematically showing a schematic configuration of an ultrasonic cleaning liquid supply device 43 ′′ which is a modified example of FIG. 17.
  • the ultrasonic cleaning liquid supply device 43 ′′ does not have a vibration part, and cleaning liquid (liquid) to which ultrasonic waves are added by an external vibration part (not shown) is supplied from the flow path 81 a. Then, the cleaning liquid is supplied to the substrate surface from the opening 81 c provided below the housing 81.
  • the upper surface 81b1 of the bottom surface 81b and the side surface 81c1 of the opening 81c that are in contact with the cleaning liquid is a conductive fluororesin including carbon nanotubes.
  • the other surface is desirably a conductive material (which may contain carbon nanotubes or may be a conductive fluororesin).
  • the substrate cleaning apparatus 4 in the fourth embodiment described above supplies an ultrasonic cleaning liquid to the rotating substrate W.
  • cleaning is performed by immersing the substrate W in an ultrasonic cleaning liquid.
  • FIG. 18A is a diagram schematically showing a schematic configuration of a substrate cleaning apparatus 4 ′ according to the fifth embodiment.
  • FIG. 18B is the figure which looked at FIG. 18A from the side surface (arrow direction).
  • a description will be given focusing on differences from the first embodiment.
  • the substrate cleaning device 4 ′ includes an ultrasonic cleaning liquid generating device 70 and a substrate rotating mechanism 49.
  • the ultrasonic cleaning liquid generating apparatus 70 includes a casing 81 and a vibration unit 82 (omitted in FIG. 18B).
  • the casing 81 has a bottom surface and side surfaces, but the upper portion is open, and the vibration unit 82 is disposed on the bottom surface.
  • the vibration unit 82 generates ultrasonic cleaning liquid by applying vibration to the cleaning liquid supplied into the housing 81.
  • At least a part of the liquid contact portion of the casing 81 is conductive as in the first embodiment. Alternatively, the conductive portion of the casing 81 may be grounded to release the charge.
  • the substrate rotation mechanism 49 is supported by a support member, and holds and rotates the substrate W to be cleaned in a state where at least a part is immersed in the ultrasonic cleaning liquid accommodated in the housing 81. More specifically, the substrate rotation mechanism 41 is provided inside the housing 81 and supports the edge of the substrate W to drive the substrate W in the circumferential direction. As a result, the substrate W is held in the vertical direction and rotates in the vertical plane. In this embodiment, the example in which the substrate W is held in the vertical direction has been described. In the present embodiment, an example in which one substrate is held is shown, but a plurality of substrates may be accommodated in the housing 81.
  • the cleaning liquid flows in the casing 81 by supplying the cleaning liquid into the casing 81 and rotating the substrate W. Then, the inner wall surface of the housing 81 may be charged due to friction between the cleaning liquid and the inner wall of the housing 81.
  • the casing 81 is conductive, it is possible to release electric charges. As a result, charging inside the casing 81 containing the cleaning liquid can be prevented, and charging of the substrate W can be prevented. And the risk of damage to the substrate W can be reduced. Further, at the time of cleaning, grounding can be canceled and a bias can be applied to the conductive portion.
  • the charged ultrasonic cleaning liquid is intentionally brought into contact with the surface of the substrate W that has already been charged, so that charging of the surface of the substrate W can be effectively suppressed.
  • the conductive portion of the housing may be grounded or a positive charge may be applied to the cleaning liquid.
  • the substrate cleaning apparatus with the substrate held by the holding mechanism, the substrate is cleaned with the ultrasonic cleaning liquid in the same manner as the nozzle described in the above embodiment, and then the substrate is continuously rotated as it is.
  • the substrate may be configured to be sprayed by spraying the IPA liquid from the IPA nozzle onto the substrate.
  • the substrate chemical mechanical polishing apparatus CMP apparatus
  • CMP apparatus is shown as the substrate processing apparatus of the above embodiment, but is not limited thereto, for example, a bevel polishing apparatus for polishing a bevel portion of the substrate,
  • the above-described substrate cleaning apparatus can also be employed in the plating apparatus.

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Abstract

The present invention provides a substrate cleaning device having high cleaning power. In an embodiment, there is provided a substrate cleaning device comprising a substrate rotation mechanism that holds and rotates a substrate, and a nozzle that sprays an ultrasonic cleaning fluid toward the rotated substrate, the nozzle being capable of pivoting within a plane perpendicular to the substrate, and also capable of pivoting within a plane parallel to the substrate.

Description

基板洗浄装置、基板処理装置、超音波洗浄液供給装置および記録媒体Substrate cleaning apparatus, substrate processing apparatus, ultrasonic cleaning liquid supply apparatus, and recording medium

 本発明は、基板洗浄装置、基板処理装置、超音波洗浄液供給装置および記録媒体に関する。 The present invention relates to a substrate cleaning apparatus, a substrate processing apparatus, an ultrasonic cleaning liquid supply apparatus, and a recording medium.

 従来から超音波を利用して半導体基板を洗浄する装置が知られている(例えば、特許文献1,2)。 Conventionally, an apparatus for cleaning a semiconductor substrate using ultrasonic waves is known (for example, Patent Documents 1 and 2).

特開2001-53047号公報JP 2001-53047 A 特開2017-162889号公報JP 2017-162889 A

 より適切に基板を洗浄できるようにする。 に す る Make the substrate more suitable for cleaning.

 本発明の一態様によれば、基板を保持し、回転させる基板回転機構と、回転される前記基板に向かって超音波洗浄液を噴射するノズルと、を備え、前記ノズルは、前記基板と垂直な面内で旋回可能であり、かつ、前記基板と平行な面内で旋回可能である、基板洗浄装置が提供される。 According to one aspect of the present invention, a substrate rotating mechanism that holds and rotates a substrate, and a nozzle that ejects an ultrasonic cleaning liquid toward the rotated substrate, the nozzle being perpendicular to the substrate. There is provided a substrate cleaning apparatus that can be swiveled in a plane and that can be swiveled in a plane parallel to the substrate.

 前記ノズルは、前記基板のエッジおよび/またはベベルに超音波洗浄液を噴射するのが望ましい。 It is desirable that the nozzle sprays an ultrasonic cleaning liquid onto the edge and / or bevel of the substrate.

 前記ノズルは、上下動可能であるのが望ましい。 It is desirable that the nozzle can move up and down.

 前記ノズルは、前記基板の上面に超音波洗浄液が噴射される位置まで上昇可能であり、かつ、前記基板の下面に超音波洗浄液が噴射される位置まで下降可能であるのが望ましい。 It is desirable that the nozzle can be raised to a position where the ultrasonic cleaning liquid is sprayed on the upper surface of the substrate and can be lowered to a position where the ultrasonic cleaning liquid is sprayed on the lower surface of the substrate.

 前記ノズルは、前記基板と垂直な面内で旋回可能であることによって、前記基板の内側から外周に向かって超音波洗浄液を噴射できるのが望ましい。 It is desirable that the nozzle can be swung in a plane perpendicular to the substrate, so that an ultrasonic cleaning liquid can be sprayed from the inside of the substrate toward the outer periphery.

 前記ノズルは、前記基板回転機構に超音波洗浄液を噴射するのが望ましい。 It is desirable that the nozzle sprays an ultrasonic cleaning liquid onto the substrate rotation mechanism.

 回転しながら前記基板に接触して前記基板の表面を洗浄する洗浄具を備え、前記ノズルは前記洗浄具に超音波洗浄液を噴射するのが望ましい。 It is desirable that a cleaning tool for cleaning the surface of the substrate while contacting the substrate while rotating is provided, and the nozzle sprays an ultrasonic cleaning liquid onto the cleaning tool.

 前記ノズルからの超音波洗浄液の噴射方向と、前記洗浄具の長手方向とのなす角は、0度より大きく90度未満であるのが望ましい。 It is desirable that the angle formed between the jet direction of the ultrasonic cleaning liquid from the nozzle and the longitudinal direction of the cleaning tool is greater than 0 degree and less than 90 degrees.

 前記ノズルは、霧状の超音波洗浄液を噴射するのが望ましい。 It is desirable that the nozzle sprays a mist-like ultrasonic cleaning liquid.

 前記基板回転機構は、前記基板を非水平方向に保持するのが望ましい。 It is desirable that the substrate rotating mechanism holds the substrate in a non-horizontal direction.

 前記基板回転機構は、前記基板を水平方向に保持して回転させ、前記ノズルは、鉛直方向に延びる第1軸に固定され、前記第1軸がその軸心を中心として回転することにより、前記ノズルは前記基板と水平な面内で旋回するのが望ましい。 The substrate rotating mechanism rotates the substrate while holding the substrate in a horizontal direction, and the nozzle is fixed to a first shaft extending in a vertical direction, and the first shaft rotates about its axis, thereby The nozzle preferably swivels in a plane horizontal to the substrate.

 前記基板回転機構は、前記基板を水平方向に保持して回転させ、前記ノズルは、水平方向に延びる第2軸に固定され、前記第2軸がその軸心を中心として回転することにより、前記ノズルは前記基板と垂直な面内で旋回するのが望ましい。 The substrate rotation mechanism holds and rotates the substrate in the horizontal direction, the nozzle is fixed to a second shaft extending in the horizontal direction, and the second shaft rotates about its axis, thereby The nozzle preferably swivels in a plane perpendicular to the substrate.

 また、本発明の別の態様によれば、基板を基板回転機構に保持して回転させるステップと、超音波洗浄液源に連通したノズルを前記基板の上面よりも高い位置に上昇させるとともに、前記基板の水平方向内側に前記ノズルを移動させ、さらに、前記基板上面のエッジに対して鋭角の入射角を有する向きに前記ノズルの噴射口が向くように前記ノズルを旋回させるステップと、前記ノズルから前記基板の上面に向けて超音波洗浄液を噴射するステップと、前記ノズルを前記基板の水平方向外側へと移動させるステップと、前記ノズルを前記基板の下面より低い位置まで下降させるとともに、前記基板の水平方向内側に前記ノズルを移動させ、さらに、前記基板下面のエッジに対して鋭角の入射角を有する向きに前記ノズルの噴射口が向くように前記ノズルを旋回させるステップと、前記ノズルから前記基板の下面に向けて超音波洗浄液を噴射するステップと、前記ノズルを前記基板の水平方向外側へと移動させるステップと、前記ノズルを前記基板のベベルと略同じ高さとするとともに、前記基板のベベルに向けて前記ノズルの噴射口が向くように前記ノズルを旋回させるステップと、前記ノズルから前記基板のベベルに向けて超音波洗浄液を噴射するステップと、を含む基板洗浄方法を実行する為に、基板洗浄装置に指令を与えて、前記基板回転機構及び前記ノズルを移動させるための機構の動作をコンピュータに実行させるためのプログラムを記録した非一時的なコンピュータ読み取り可能な記録媒体が提供される。 According to another aspect of the present invention, the substrate is held and rotated by the substrate rotation mechanism, the nozzle communicating with the ultrasonic cleaning liquid source is raised to a position higher than the upper surface of the substrate, and the substrate Moving the nozzle inwardly in the horizontal direction, and further rotating the nozzle so that the nozzle outlet faces in an orientation having an acute incident angle with respect to an edge of the upper surface of the substrate; Spraying an ultrasonic cleaning liquid toward the upper surface of the substrate; moving the nozzle outward in the horizontal direction of the substrate; lowering the nozzle to a position lower than the lower surface of the substrate; The nozzle is moved inward in the direction, and the nozzle outlet is oriented in a direction having an acute incident angle with respect to the edge of the lower surface of the substrate. Rotating the nozzle, spraying ultrasonic cleaning liquid from the nozzle toward the lower surface of the substrate, moving the nozzle outward in the horizontal direction of the substrate, and beveling the nozzle on the substrate. And rotating the nozzle so that the nozzle outlet faces the bevel of the substrate, and jetting ultrasonic cleaning liquid from the nozzle toward the bevel of the substrate; In order to execute the substrate cleaning method including the above, a non-temporary recording of a program for giving a command to the substrate cleaning apparatus and causing the computer to execute the operation of the mechanism for moving the substrate rotating mechanism and the nozzle A computer readable recording medium is provided.

 また、本発明の別の態様によれば、洗浄液に超音波を与えることによって超音波洗浄液を生成する振動部と、生成された前記超音波洗浄液を収容する筐体と、を備え、前記筐体における前記超音波洗浄液と接する面の少なくとも一部は、導電性フッ素樹脂製である、超音波洗浄液供給装置が提供される。
 このような構成により、超音波洗浄液の帯電を抑えることができる。
According to another aspect of the present invention, the housing includes: a vibrating unit that generates an ultrasonic cleaning liquid by applying ultrasonic waves to the cleaning liquid; and a casing that stores the generated ultrasonic cleaning liquid. An ultrasonic cleaning liquid supply apparatus is provided in which at least a part of the surface in contact with the ultrasonic cleaning liquid is made of a conductive fluororesin.
With such a configuration, charging of the ultrasonic cleaning liquid can be suppressed.

 前記導電性フッ素樹脂は、カーボンナノチューブを含むフッ素樹脂であってもよい。
 また、前記フッ素樹脂は、PTFE,PCTFEまたはPFAであってもよい。
The conductive fluororesin may be a fluororesin containing carbon nanotubes.
The fluororesin may be PTFE, PCTFE, or PFA.

 望ましくは、前記超音波洗浄液が噴射される部分の少なくとも一部は、前記導電性フッ素樹脂より放熱性が高い。
 望ましくは、前記超音波洗浄液が噴射される部分の少なくとも一部は、サファイア製、石英製またはカーボンナノチューブを含むPTFE製である。
 このような構成により、噴射される超音波洗浄液の温度を下げることができ、洗浄力が向上する。
Desirably, at least a part of the portion where the ultrasonic cleaning liquid is sprayed has higher heat dissipation than the conductive fluororesin.
Desirably, at least a part of the portion to which the ultrasonic cleaning liquid is sprayed is made of sapphire, quartz, or PTFE containing carbon nanotubes.
With such a configuration, the temperature of the ultrasonic cleaning liquid to be ejected can be lowered, and the cleaning power is improved.

 前記筐体の前記導電性フッ素樹脂製である部分には、バイアスが印加されてもよい。 A bias may be applied to the portion of the casing made of the conductive fluororesin.

 また、本発明の別の態様によれば、基板を回転させる基板回転機構と、回転される前記基板に対して前記超音波洗浄液を供給する上記超音波洗浄液供給装置と、を備える基板洗浄装置が提供される。 According to another aspect of the present invention, there is provided a substrate cleaning apparatus comprising: a substrate rotating mechanism that rotates a substrate; and the ultrasonic cleaning liquid supply device that supplies the ultrasonic cleaning liquid to the rotated substrate. Provided.

 また、本発明の別の態様によれば、洗浄液に超音波を与えることによって超音波洗浄液を生成する振動部と、生成された前記超音波洗浄液を収容する筐体と、少なくとも一部が前記筐体内に収容された前記超音波洗浄液に浸かった状態の基板を回転させる基板回転機構と、を備え、前記筐体における前記超音波洗浄液と接する面の少なくとも一部は、導電性フッ素樹脂製である、基板洗浄装置が提供される。 According to another aspect of the present invention, a vibration unit that generates ultrasonic cleaning liquid by applying ultrasonic waves to the cleaning liquid, a casing that stores the generated ultrasonic cleaning liquid, and at least a part of the casing. A substrate rotating mechanism for rotating the substrate immersed in the ultrasonic cleaning liquid housed in the body, and at least a part of the surface of the housing that contacts the ultrasonic cleaning liquid is made of a conductive fluororesin. A substrate cleaning apparatus is provided.

 また、本発明の別の態様によれば、洗浄液に超音波を与えることによって超音波洗浄液を生成する工程と、超音波洗浄液と接する面の少なくとも一部が導電性フッ素樹脂製とされた筐体内に収容された前記超音波洗浄液に基板を浸漬させる工程と、前記超音波洗浄液に浸かった状態の基板を回転させて洗浄液を流動させることで、前記基板を洗浄する工程と、を含むことを特徴とする基板洗浄方法が提供される。 According to another aspect of the present invention, the step of generating the ultrasonic cleaning liquid by applying ultrasonic waves to the cleaning liquid, and the inside of the housing in which at least a part of the surface in contact with the ultrasonic cleaning liquid is made of a conductive fluororesin A step of immersing the substrate in the ultrasonic cleaning liquid contained in the substrate, and a step of cleaning the substrate by rotating the substrate immersed in the ultrasonic cleaning liquid to flow the cleaning liquid. A substrate cleaning method is provided.

 また、本発明の別の態様によれば、基板面に対して超音波が与えられた超音波洗浄液を供給するための超音波洗浄液供給装置であって、前記超音波洗浄液を外部から受け入れる流路と、下方の位置に開口が設けられた筐体と、を備え、前記筐体における前記超音波洗浄液と接する底面の上面および前記開口の側面の少なくとも一部は、カーボンナノチューブを含む導電性フッ素樹脂であり、他の面は導電性材料である、超音波洗浄液供給装置が提供される。 According to another aspect of the present invention, there is provided an ultrasonic cleaning liquid supply device for supplying an ultrasonic cleaning liquid to which ultrasonic waves are applied to the substrate surface, wherein the flow path for receiving the ultrasonic cleaning liquid from the outside. And a housing provided with an opening at a lower position, and at least a part of the upper surface of the bottom surface in contact with the ultrasonic cleaning liquid and the side surface of the opening in the housing includes a conductive fluororesin containing carbon nanotubes An ultrasonic cleaning liquid supply device is provided in which the other surface is a conductive material.

 また、本発明の別の態様によれば、基板を研磨する基板研磨装置と、研磨後の基板を洗浄する、上記の基板洗浄装置と、を備えた基板処理装置が提供される。 Further, according to another aspect of the present invention, there is provided a substrate processing apparatus including a substrate polishing apparatus for polishing a substrate and the above-described substrate cleaning apparatus for cleaning a polished substrate.

 適切に洗浄できる。 Can be cleaned properly.

基板処理装置の概略上面図。The schematic top view of a substrate processing apparatus. 基板Wの側面拡大図。The side surface enlarged view of the board | substrate W. FIG. 第1の実施形態に係る基板洗浄装置4の概略構成を示す斜視図。1 is a perspective view showing a schematic configuration of a substrate cleaning apparatus 4 according to a first embodiment. 第1の実施形態に係る基板洗浄装置4の概略構成を示す上面図。1 is a top view showing a schematic configuration of a substrate cleaning apparatus 4 according to a first embodiment. 第1の実施形態に係る基板洗浄装置4の概略構成を示す側面図。The side view which shows schematic structure of the board | substrate cleaning apparatus 4 which concerns on 1st Embodiment. 第1の実施形態に係る基板洗浄装置4の概略構成を示す側面図。The side view which shows schematic structure of the board | substrate cleaning apparatus 4 which concerns on 1st Embodiment. ノズル435から基板Wの下面に超音波洗浄液を噴射する様子を示す図。The figure which shows a mode that an ultrasonic cleaning liquid is injected to the lower surface of the board | substrate W from the nozzle 435. FIG. ノズル435から基板Wの上面エッジに超音波洗浄液を噴射する様子を示す図。The figure which shows a mode that an ultrasonic cleaning liquid is injected to the upper surface edge of the board | substrate W from the nozzle 435. FIG. ノズル435から基板Wの下面エッジに超音波洗浄液を噴射する様子を示す図。The figure which shows a mode that an ultrasonic cleaning liquid is injected to the lower surface edge of the board | substrate W from the nozzle 435. FIG. ノズル435から基板Wのベベルに超音波洗浄液を噴射する様子を示す図。The figure which shows a mode that an ultrasonic cleaning liquid is injected to the bevel of the board | substrate W from the nozzle 435. FIG. 超音波洗浄液供給装置42の具体的な構成例を示す図。The figure which shows the specific structural example of the ultrasonic cleaning fluid supply apparatus. 超音波洗浄液を基板Wの内側から外周に向かって噴射する様子を示す図。The figure which shows a mode that an ultrasonic cleaning liquid is injected toward the outer periphery from the inner side of the board | substrate W. FIG. 基板洗浄装置4の処理動作の一例を示すフローチャート。5 is a flowchart showing an example of processing operation of the substrate cleaning apparatus 4. 第2の実施形態に係る基板洗浄装置4’の概略構成を示す斜視図。The perspective view which shows schematic structure of the board | substrate cleaning apparatus 4 'which concerns on 2nd Embodiment. 第2の実施形態に係る基板洗浄装置4’の概略構成を示す上面図。The top view showing the schematic structure of substrate cleaning device 4 'concerning a 2nd embodiment. 第2の実施形態に係る基板洗浄装置4’の概略構成を示す側面図。The side view showing the schematic structure of substrate cleaning device 4 'concerning a 2nd embodiment. ノズル435から基板Wの下面に超音波洗浄液を噴射する様子を示す図。The figure which shows a mode that an ultrasonic cleaning liquid is injected to the lower surface of the board | substrate W from the nozzle 435. FIG. 第3の実施形態に係る基板洗浄装置4’’の概略構成を示す正面図。The front view which shows schematic structure of the board | substrate cleaning apparatus 4 '' which concerns on 3rd Embodiment. 第3の実施形態に係る基板洗浄装置4’’の概略構成を示す側面図。The side view which shows schematic structure of the board | substrate cleaning apparatus 4 '' which concerns on 3rd Embodiment. 基板洗浄装置4’’の変形例の概略構成を示す正面図。The front view which shows schematic structure of the modification of board | substrate cleaning apparatus 4 ''. 基板洗浄装置4’’の変形例の概略構成を示す側面図。The side view which shows schematic structure of the modification of board | substrate washing | cleaning apparatus 4 ''. 基板洗浄装置4’’の変形例の概略構成を示す側面図。The side view which shows schematic structure of the modification of board | substrate washing | cleaning apparatus 4 ''. ノズル435から超音波洗浄液を噴霧する様子を示す図。The figure which shows a mode that an ultrasonic cleaning liquid is sprayed from the nozzle 435. FIG. 基板洗浄装置4’’’の概略構成を示す斜視図。The perspective view which shows schematic structure of the board | substrate washing | cleaning apparatus 4 '' ''. 一実施形態に係る基板処理装置の概略上面図。1 is a schematic top view of a substrate processing apparatus according to an embodiment. 第1の実施形態に係る基板洗浄装置4の平面図。The top view of the board | substrate cleaning apparatus 4 which concerns on 1st Embodiment. 第1の実施形態に係る基板洗浄装置4の側面図。The side view of the board | substrate cleaning apparatus 4 which concerns on 1st Embodiment. 超音波洗浄液供給装置43の概略構成を模式的に示す図。The figure which shows typically schematic structure of the ultrasonic cleaning fluid supply apparatus 43. FIG. 図16の変形例である超音波洗浄液供給装置43’の概略構成を模式的に示す図。The figure which shows typically schematic structure of the ultrasonic cleaning fluid supply apparatus 43 'which is a modification of FIG. 図16の変形例である超音波洗浄液供給装置43’’の概略構成を模式的に示す図。The figure which shows typically schematic structure of the ultrasonic cleaning fluid supply apparatus 43 '' which is a modification of FIG. 第2の実施形態に係る基板洗浄装置4’の概略構成を模式的に示す図。The figure which shows typically schematic structure of the board | substrate cleaning apparatus 4 'which concerns on 2nd Embodiment. 図18Aを側面(矢印方向)から見た図。The figure which looked at FIG. 18A from the side (arrow direction).

 以下、本発明に係る実施形態について、図面を参照しながら具体的に説明する。 Hereinafter, embodiments according to the present invention will be specifically described with reference to the drawings.

 特許文献1の洗浄装置では、半導体基板における洗浄液が到達する領域が限られており、洗浄力が十分ではないという問題がある。 In the cleaning apparatus of Patent Document 1, there is a problem that the cleaning liquid in the semiconductor substrate reaches a limited area, and the cleaning power is not sufficient.

 第1~第3の実施形態の課題は、洗浄力が高い基板洗浄装置、および、そのような基板洗浄装置を備えた基板処理装置、ならびに、そのような基板洗浄を行うためのプログラムを記録した記録媒体を提供することである。
 以下で詳しく説明するように、第1~第3の実施形態によれば、超音波洗浄液を噴射するノズルが旋回可能であるため、基板の広い領域を洗浄でき、洗浄力が向上する。
The problems of the first to third embodiments are a substrate cleaning apparatus having a high cleaning power, a substrate processing apparatus provided with such a substrate cleaning apparatus, and a program for performing such substrate cleaning. It is to provide a recording medium.
As will be described in detail below, according to the first to third embodiments, since the nozzle for injecting the ultrasonic cleaning liquid can be swung, a wide area of the substrate can be cleaned and the cleaning power is improved.

 (第1の実施形態)
 図1は、一実施形態に係る基板処理装置の概略上面図である。本基板処理装置は、直径300mmあるいは450mmの半導体ウエハ、フラットパネル、CMOS(Complementary Metal Oxide Semiconductor)やCCD(Charge Coupled Device)などのイメージセンサ、MRAM(Magnetoresistive Random Access Memory)における磁性膜の製造工程において、種々の基板を処理するものである。また、基板の形状は円形に限られず、矩形形状(角形状)や、多角形形状のものであってもよい。
(First embodiment)
FIG. 1 is a schematic top view of a substrate processing apparatus according to an embodiment. This substrate processing apparatus is used in the manufacturing process of a magnetic film in a semiconductor wafer having a diameter of 300 mm or 450 mm, a flat panel, an image sensor such as a CMOS (Complementary Metal Oxide Semiconductor) or a CCD (Charge Coupled Device), or an MRAM (Magnetoresistive Random Access Memory). Process various substrates. Further, the shape of the substrate is not limited to a circle, but may be a rectangular shape (square shape) or a polygonal shape.


 ここで、基板Wの「エッジ」および「ベベル」について説明する。図1Aは、基板Wの側面拡大図である。図示のように、本明細書において、基板Wの「エッジ」とは基板表面の外周付近の平坦部Waを指し、より詳細には、基板Wの縁から所定距離内の平坦部Waと考えることができる。また、本明細書において、基板Wの「ベベル」とはエッジより外側の基板表面から角度を有する曲面部Wb(図2(b))あるいは面取り部Wcおよび側面部Wd(図2(a))のことを指す。また、これらを「エッジ」及び「ベベル」の双方を含む領域を、「周縁領域」という。

Here, “edge” and “bevel” of the substrate W will be described. FIG. 1A is an enlarged side view of the substrate W. FIG. As illustrated, in this specification, the “edge” of the substrate W refers to the flat portion Wa near the outer periphery of the substrate surface, and more specifically, the flat portion Wa within a predetermined distance from the edge of the substrate W. Can do. Further, in this specification, the “bevel” of the substrate W is a curved surface portion Wb (FIG. 2B) having an angle from the substrate surface outside the edge, or a chamfered portion Wc and a side surface portion Wd (FIG. 2A). Refers to that. In addition, a region including both “edge” and “bevel” is referred to as “peripheral region”.


 本実施形態の基板処理装置は、略矩形状のハウジング1と、多数の基板をストックする基板カセットが載置されるロードポート2と、1または複数(図1に示す態様では4つ)の基板研磨装置3と、1または複数(図1に示す態様では2つ)の基板洗浄装置4と、基板乾燥装置5と、搬送機構6a~6dと、制御部7とを備えている。

The substrate processing apparatus of the present embodiment includes a substantially rectangular housing 1, a load port 2 on which a substrate cassette for stocking a large number of substrates is placed, and one or a plurality of (four in the embodiment shown in FIG. 1) substrates. A polishing apparatus 3, one or a plurality of (two in the embodiment shown in FIG. 1) substrate cleaning apparatus 4, a substrate drying apparatus 5, transport mechanisms 6 a to 6 d, and a control unit 7 are provided.


 ロードポート2は、ハウジング1に隣接して配置されている。ロードポート2には、オープンカセット、SMIF(Standard Mechanical Interface)ポッド、又はFOUP(Front Opening Unified Pod)を搭載することができる。SMIFポッド、FOUPは、内部に基板カセットを収納し、隔壁で覆うことにより、外部空間とは独立した環境を保つことができる密閉容器である。基板としては、例えば半導体ウエハ等を挙げることができる。

The load port 2 is disposed adjacent to the housing 1. The load port 2 can be equipped with an open cassette, a SMIF (Standard Mechanical Interface) pod, or a FOUP (Front Opening Unified Pod). SMIF pods and FOUPs are sealed containers that can maintain an environment independent of the external space by accommodating a substrate cassette inside and covering with a partition wall. Examples of the substrate include a semiconductor wafer.


 基板を研磨する基板研磨装置3、研磨後の基板を洗浄する基板洗浄装置4、洗浄後の基板を乾燥させる基板乾燥装置5は、ハウジング1内に収容されている。基板研磨装置3は、基板処理装置の長手方向に沿って配列され、基板洗浄装置4および基板乾燥装置5も基板処理装置の長手方向に沿って配列されている。

A substrate polishing apparatus 3 for polishing the substrate, a substrate cleaning apparatus 4 for cleaning the polished substrate, and a substrate drying apparatus 5 for drying the cleaned substrate are accommodated in the housing 1. The substrate polishing apparatus 3 is arranged along the longitudinal direction of the substrate processing apparatus, and the substrate cleaning apparatus 4 and the substrate drying apparatus 5 are also arranged along the longitudinal direction of the substrate processing apparatus.


 また、基板洗浄装置4および基板乾燥装置5は、それぞれ、図示しない略矩形状の筐体であって、シャッター機構により開閉自在とされ筐体部に設けられた開閉部から被処理対象の基板を出し入れするように構成されていてもよい。あるいは、変形実施例としては、基板洗浄装置4および基板乾燥装置5を一体化し、基板洗浄処理と基板乾燥処理とを連続的に1つのユニット内で行うようにしてもよい。

Each of the substrate cleaning device 4 and the substrate drying device 5 is a substantially rectangular housing (not shown), and can be opened and closed by a shutter mechanism, and the substrate to be processed is opened from an opening / closing portion provided in the housing portion. It may be configured to take in and out. Alternatively, as a modified embodiment, the substrate cleaning device 4 and the substrate drying device 5 may be integrated, and the substrate cleaning process and the substrate drying process may be performed continuously in one unit.


 本実施形態では、基板洗浄装置4が、ペン型洗浄具を用いた接触洗浄と、超音波洗浄水を用いた非接触洗浄とを行う。詳細は後述するが、ペン型洗浄具を用いた接触洗浄とは、洗浄液の存在下で、鉛直方向に延びる円柱状のペン型洗浄具の下端接触面を基板に接触させ、洗浄具を自転させながら一方向に向けて移動させて、基板の表面をスクラブ洗浄するものである。

In the present embodiment, the substrate cleaning device 4 performs contact cleaning using a pen-type cleaning tool and non-contact cleaning using ultrasonic cleaning water. Although details will be described later, contact cleaning using a pen-type cleaning tool refers to contacting the lower end contact surface of a cylindrical pen-type cleaning tool extending in the vertical direction with a substrate in the presence of cleaning liquid, and rotating the cleaning tool. However, it is moved in one direction to scrub the surface of the substrate.


 基板乾燥装置5は、水平に回転する基板に向けて、移動する噴射ノズルからIPA蒸気を噴出して基板を乾燥させ、さらに基板を高速で回転させて遠心力によって基板を乾燥させるスピン乾燥ユニットが使用され得る。

The substrate drying apparatus 5 includes a spin drying unit that blows IPA vapor from a moving spray nozzle toward a horizontally rotating substrate to dry the substrate, and further rotates the substrate at high speed to dry the substrate by centrifugal force. Can be used.


 ロードポート2、ロードポート2側に位置する基板研磨装置3および基板乾燥装置5に囲まれた領域には、搬送機構6aが配置されている。また、基板研磨装置3ならびに基板洗浄装置4および基板乾燥装置5と平行に、搬送機構6bが配置されている。搬送機構6aは、研磨前の基板をロードポート2から受け取って搬送機構6bに受け渡したり、基板乾燥装置5から取り出された乾燥後の基板を搬送機構6bから受け取ったりする。

In a region surrounded by the load port 2 and the substrate polishing apparatus 3 and the substrate drying apparatus 5 located on the load port 2 side, a transport mechanism 6a is arranged. Further, a transport mechanism 6 b is arranged in parallel with the substrate polishing apparatus 3, the substrate cleaning apparatus 4 and the substrate drying apparatus 5. The transport mechanism 6a receives the substrate before polishing from the load port 2 and delivers it to the transport mechanism 6b, or receives the dried substrate taken out from the substrate drying apparatus 5 from the transport mechanism 6b.


 2つの基板洗浄装置4間に、これら基板洗浄装置4間で基板の受け渡しを行う搬送機構6cが配置され、基板洗浄装置4と基板乾燥装置5との間に、これら基板洗浄装置4と基板乾燥装置5間で基板の受け渡しを行う搬送機構6cが配置されている。

Between the two substrate cleaning apparatuses 4, a transfer mechanism 6 c for transferring the substrate between the substrate cleaning apparatuses 4 is disposed, and between the substrate cleaning apparatus 4 and the substrate drying apparatus 5, the substrate cleaning apparatus 4 and the substrate drying are disposed. A transport mechanism 6c that transfers substrates between the apparatuses 5 is disposed.


 さらに、ハウジング1の内部には、基板処理装置の各機器の動きを制御する制御部7が配置されている。本実施形態では、ハウジング1の内部に制御部7が配置されている態様を用いて説明するが、これに限られることはなく、ハウジング1の外部に制御部7が配置されてもよい。例えば、この制御部7により、後述する実施形態のように、基板の保持及び回転を行うスピンドル41の動作や、基板に向かって超音波洗浄液を噴射するノズルの吐出開始及び終了タイミング、あるいは、ノズルの上下動および垂直面水平面内での旋回動を制御するように構成することもできる。なお、制御部は、所定のプログラムを格納したメモリと、メモリのプログラムを実行するCPU(Central Processing Unit)と、CPUがプログラムを実行することで実現される制御モジュールとを有してもよい。制御モジュールは、また、制御部は、基板処理装置及びその他の関連装置を統括制御する図示しない上位コントローラと通信可能に構成され、上位コントローラが有するデータベースとの間でデータのやり取りをすることができる。ここで、メモリを構成する記憶媒体は、各種の設定データや処理プログラム等の各種のプログラムを格納している。記憶媒体としては、コンピュータで読み取り可能なROMやRAMなどのメモリや、ハードディスク、CD-ROM、DVD-ROMやフレキシブルディスクなどのディスク状記憶媒体などの公知のものが使用され得る。

Furthermore, a control unit 7 that controls the movement of each device of the substrate processing apparatus is disposed inside the housing 1. Although this embodiment demonstrates using the aspect by which the control part 7 is arrange | positioned inside the housing 1, it is not restricted to this, The control part 7 may be arrange | positioned outside the housing 1. FIG. For example, by the control unit 7, as in an embodiment described later, the operation of the spindle 41 that holds and rotates the substrate, the discharge start and end timing of the nozzle that ejects the ultrasonic cleaning liquid toward the substrate, or the nozzle It is also possible to control the vertical movement and the swiveling movement in the vertical plane. The control unit may include a memory that stores a predetermined program, a CPU (Central Processing Unit) that executes the program in the memory, and a control module that is realized by the CPU executing the program. The control module is configured so that the control unit can communicate with a host controller (not shown) that performs overall control of the substrate processing apparatus and other related apparatuses, and can exchange data with a database included in the host controller. . Here, the storage medium constituting the memory stores various programs such as various setting data and processing programs. As the storage medium, a known medium such as a computer-readable memory such as ROM or RAM, or a disk-shaped storage medium such as a hard disk, CD-ROM, DVD-ROM, or flexible disk can be used.


 図2A~図2Dは、それぞれ、第1の実施形態に係る基板洗浄装置4の概略構成を示す斜視図、上面図および側面図である。基板洗浄装置4は、スピンドル41と、超音波洗浄液供給装置42とを備え、これらがシャッタを有する筐体(不図示)に収納されている。基板洗浄装置4内の各部は図1の制御部7により制御される。

2A to 2D are a perspective view, a top view, and a side view, respectively, showing a schematic configuration of the substrate cleaning apparatus 4 according to the first embodiment. The substrate cleaning device 4 includes a spindle 41 and an ultrasonic cleaning liquid supply device 42, which are housed in a casing (not shown) having a shutter. Each part in the substrate cleaning apparatus 4 is controlled by the control unit 7 in FIG.


 スピンドル41は、表面を上にして基板Wの周縁部を支持し、水平面内で回転させる。より具体的には、スピンドル41の上部に設けたコマ41aの外周側面に形成した把持溝内に基板Wの周縁部を位置させて内方に押し付け、コマ41aを回転(自転)させることにより基板Wが回転する。ここで、「コマ」は基板を把持するための「把持部」と言い換えられる。また、「スピンドル」は「ローラー」と言い換えることもできる。スピンドル41の回転方向や回転数は図1の制御部7が制御する。回転数は一定でもよいし、可変でもよい。

The spindle 41 supports the peripheral edge of the substrate W with the surface facing up, and rotates in a horizontal plane. More specifically, the peripheral portion of the substrate W is positioned in a gripping groove formed on the outer peripheral side surface of the top 41a provided on the upper portion of the spindle 41 and pressed inward to rotate (spin) the top 41a. W rotates. Here, “frame” is rephrased as a “gripping part” for gripping the substrate. The “spindle” can also be called a “roller”. The control unit 7 in FIG. 1 controls the rotation direction and the number of rotations of the spindle 41. The rotation speed may be constant or variable.


 なお、後述する超音波洗浄液が飛散するのを防止するために、スピンドル41の外側にあって基板Wの周囲を覆うカップ(不図示)を設けてもよい。このカップは、図示しない洗浄ユニット上部のFFUからユニット内に供給されるダウンフローの気流がカップに設けられた孔を通過して下方に逃げるように構成されていてもよい。このように構成することで、洗浄液や超音波洗浄液が飛散するのをより確実に防止できる。

Note that a cup (not shown) that is outside the spindle 41 and covers the periphery of the substrate W may be provided in order to prevent the ultrasonic cleaning liquid described later from scattering. The cup may be configured such that a downflow airflow supplied into the unit from an FFU above the cleaning unit (not shown) passes through a hole provided in the cup and escapes downward. By comprising in this way, it can prevent more reliably that a washing | cleaning liquid and an ultrasonic cleaning liquid scatter.


 以下、図2Cおよび図2Dを参照して、超音波洗浄液供給装置42について詳しく説明する。超音波洗浄液供給装置42は、支持軸431、可動軸432、ヘッド433、旋回軸434およびノズル435を有する。

 支持軸431は鉛直方向に延びており、固定されている。

Hereinafter, the ultrasonic cleaning liquid supply apparatus 42 will be described in detail with reference to FIGS. 2C and 2D. The ultrasonic cleaning liquid supply device 42 includes a support shaft 431, a movable shaft 432, a head 433, a turning shaft 434, and a nozzle 435.

The support shaft 431 extends in the vertical direction and is fixed.


 可動軸432は支持軸431の上部から上方に延びており、上昇および下降可能であるとともに、自転(軸心を中心とした回転、以下同じ)が可能である。なお、ノズル435の上下動が不要な場合、支持軸431と可動軸432とが一体であってもよい。

The movable shaft 432 extends upward from the upper portion of the support shaft 431, and can move up and down, and can rotate (rotate about an axis, the same applies hereinafter). When the vertical movement of the nozzle 435 is unnecessary, the support shaft 431 and the movable shaft 432 may be integrated.


 ヘッド433は可動軸432の上端に固定されている。また、水平方向に延びる旋回軸434がヘッド433を貫通している。

The head 433 is fixed to the upper end of the movable shaft 432. Further, a pivot shaft 434 extending in the horizontal direction passes through the head 433.


 ノズル435はヘッド433の先端に取り付けられている。ノズル435は、ヘッド433を介して可動軸432に取り付けられているとも言えるし、ヘッド433を介して旋回軸434に取り付けられているとも言える。

The nozzle 435 is attached to the tip of the head 433. It can be said that the nozzle 435 is attached to the movable shaft 432 via the head 433, and can be said to be attached to the turning shaft 434 via the head 433.


 そして、ノズル435は回転される基板Wに向かって洗浄液を噴射する。洗浄液の種類に制限はなく、例えばDIWや純水であってもよいし、薬液であってもよく、DIWや純水に対して脱気処理を施した脱気水、気体成分を溶解させたガス溶解水であってもよい。薬液としては、例えば、弱オゾン水、SC1、SC2、エッチング液、低濃度の炭酸水などの洗浄液が挙げられる。また、洗浄液の温度にも制限はなく、また、温度調整可能(例えば、摂氏0度~摂氏80度程度まで)であってもよい。

The nozzle 435 sprays the cleaning liquid toward the rotated substrate W. There is no limitation on the type of cleaning liquid, and it may be, for example, DIW or pure water, or may be a chemical liquid, and degassed water and gas components that have been degassed with respect to DIW or pure water are dissolved. Gas-dissolved water may be used. Examples of the chemical liquid include cleaning liquids such as weak ozone water, SC1, SC2, etching liquid, and low-concentration carbonated water. The temperature of the cleaning liquid is not limited, and the temperature may be adjustable (for example, from about 0 degrees Celsius to about 80 degrees Celsius).


 以下では、ノズル435またはヘッド433の内部に振動子(不図示)が設けられており、超音波が与えられた洗浄液(以下、超音波洗浄液ともいう)が噴射されるものする。ノズル435またはヘッド433の内部では、制御部7からの制御信号に基づき図示しない発振器から発振信号がノズル内の振動子に出力されると、振動子が振動して超音波が発生する。超音波の振動数にも制限はなく、例えば高周波数(800kHz程度)~超高周波数(5MHz程度)であってもよい。一般には周波数が高いほど小さな異物(パーティクル)を除去できる。

In the following, a vibrator (not shown) is provided inside the nozzle 435 or the head 433, and a cleaning liquid to which ultrasonic waves are applied (hereinafter also referred to as ultrasonic cleaning liquid) is ejected. In the nozzle 435 or the head 433, when an oscillation signal is output from an oscillator (not shown) to a vibrator in the nozzle based on a control signal from the control unit 7, the vibrator vibrates and an ultrasonic wave is generated. The frequency of the ultrasonic wave is not limited, and may be, for example, a high frequency (about 800 kHz) to a very high frequency (about 5 MHz). In general, the higher the frequency, the smaller foreign particles (particles) can be removed.


 本実施形態では、旋回軸434が自転することにより、ヘッド433に保持されたノズル435が鉛直面内(言い換えると、基板Wと垂直な面内)で旋回可能となっている(図2Cの破線矢印参照、以下、この旋回を縦方向旋回ともいう)。このような旋回軸434を軸とした縦方向旋回により、図2Bに示すように、基板Wのノズル435に近い側から遠い側にかけて、超音波洗浄液を噴射できる。具体的には、可動軸432が固定位置(ノズル435の高さが一定)であっても、縦方向旋回によって基板Wの端から端まで超音波洗浄液を噴射できるのが望ましい。

In the present embodiment, the turning shaft 434 rotates, so that the nozzle 435 held by the head 433 can turn in a vertical plane (in other words, in a plane perpendicular to the substrate W) (broken line in FIG. 2C). (Refer to the arrow, hereinafter, this turning is also referred to as longitudinal turning). As shown in FIG. 2B, the ultrasonic cleaning liquid can be ejected from the side closer to the nozzle 435 to the side farther from the substrate W by such vertical turning about the turning axis 434. Specifically, even when the movable shaft 432 is at a fixed position (the height of the nozzle 435 is constant), it is desirable that the ultrasonic cleaning liquid can be ejected from end to end of the substrate W by turning in the vertical direction.


 また、可動軸432が自転することにより、ヘッド433に保持されたノズル435が水平面内(言い換えると、基板Wと平行な面内)で旋回可能となっている(図2Bの破線参照、以下、この旋回を横方向旋回ともいう)。このような可動軸432を軸とした横方向旋回により、図2Bに示すように、基板Wにおける旋回軸434の左側から右側にかけて、円弧状に超音波洗浄液を噴射できる。

Further, as the movable shaft 432 rotates, the nozzle 435 held by the head 433 can turn in a horizontal plane (in other words, in a plane parallel to the substrate W) (see the broken line in FIG. 2B, hereinafter). This turning is also called a lateral turning). As shown in FIG. 2B, the ultrasonic cleaning liquid can be ejected in an arc shape from the left side to the right side of the turning shaft 434 in the substrate W by such a lateral turning with the movable shaft 432 as an axis.


 可動軸432は支持軸431に対して上昇および下降可能であるので、図2Cに示すように、ノズル435の鉛直面内の角度(噴射方向と可動軸432とがなす角度)を一定の状態で、ノズル435の高さをかえることによっても、基板Wの表面で超音波洗浄液を着液させる位置を変えることができる。

 また、ノズル435の高さと縦方向旋回の角度を任意に調整することにより、様々な超音波洗浄液の噴射圧力に応じて、所望の位置に超音波洗浄液を供給することが可能になる。また、洗浄中にノズル435の高さおよび/または縦方向旋回の角度を変化させることにより、基板上の超音波洗浄液の着液位置を走査してもよい。

Since the movable shaft 432 can be raised and lowered with respect to the support shaft 431, as shown in FIG. 2C, the angle in the vertical plane of the nozzle 435 (the angle formed by the ejection direction and the movable shaft 432) is constant. The position where the ultrasonic cleaning liquid is deposited on the surface of the substrate W can also be changed by changing the height of the nozzle 435.

In addition, by arbitrarily adjusting the height of the nozzle 435 and the angle of vertical rotation, the ultrasonic cleaning liquid can be supplied to a desired position according to the spray pressure of various ultrasonic cleaning liquids. Further, the position where the ultrasonic cleaning liquid is deposited on the substrate may be scanned by changing the height of the nozzle 435 and / or the angle of vertical rotation during cleaning.


 さらに、可動軸432が上下動することにより、ヘッド433に保持されたノズル435は、基板Wの上面より高い位置から低い位置まで移動可能である。ノズル435が基板Wの上面より高い位置まで上昇することにより、超音波洗浄液は基板Wの上面に噴射される(図2D)。すなわち、図2Dに示すように、可動軸432が上下動し、かつ、縦方向旋回が可能である。一方、ノズル435が基板Wの下面より低い位置まで下降することにより、超音波洗浄液は基板Wの下面に噴射される(図3)。超音波洗浄液を基板Wの上面に噴射する場合と同様に、基板Wの下面の端から端までの超音波洗浄液の噴射を、ノズル435の縦方向旋回のみによって実現してもよく、ノズル435の上下動のみによって実現してもよく、あるいは縦方向旋回と上下動を組み合わせて実現してもよい。

Furthermore, the nozzle 435 held by the head 433 is movable from a position higher than the upper surface of the substrate W to a position lower than the upper surface of the substrate W as the movable shaft 432 moves up and down. As the nozzle 435 moves up to a position higher than the upper surface of the substrate W, the ultrasonic cleaning liquid is jetted onto the upper surface of the substrate W (FIG. 2D). That is, as shown in FIG. 2D, the movable shaft 432 moves up and down and can be turned in the vertical direction. On the other hand, when the nozzle 435 is lowered to a position lower than the lower surface of the substrate W, the ultrasonic cleaning liquid is jetted onto the lower surface of the substrate W (FIG. 3). Similarly to the case where the ultrasonic cleaning liquid is sprayed onto the upper surface of the substrate W, the spraying of the ultrasonic cleaning liquid from the end to the end of the lower surface of the substrate W may be realized only by the vertical rotation of the nozzle 435. You may implement | achieve only by a vertical motion, or you may implement | achieve combining a vertical direction turning and a vertical motion.


 なお、超音波洗浄液供給装置42の各部材は不図示のノズル移動機構によって制御され、ノズル435が移動する。なお、一実施態様においては、ノズル移動機構は、例えば、シリンダーやモーターといった駆動力を発生させる駆動機構と、当該駆動機構からの駆動力を可動軸432の上昇、下降、自転、および旋回軸434の回転へと変換する変換機構(例えば、リンク機構や遊星歯車機構など)を含む機構とすることができる。

Each member of the ultrasonic cleaning liquid supply device 42 is controlled by a nozzle moving mechanism (not shown), and the nozzle 435 moves. In one embodiment, the nozzle moving mechanism includes, for example, a driving mechanism that generates a driving force such as a cylinder or a motor, and the driving force from the driving mechanism is used to raise, lower, rotate, and rotate the movable shaft 432. It can be set as the mechanism containing the conversion mechanism (For example, a link mechanism, a planetary gear mechanism, etc.) which converts into rotation of this.


 以上の機構により、超音波洗浄液を基板Wの広い領域に噴射できる。例えば、図4A~図4Cに示すように、可動軸432の上下動および縦方向旋回により、基板Wのエッジやベベルも洗浄できる。具体的には、ノズル435を基板Wの上面より高い位置まで上昇させ、ノズル435がやや下向きとなるよう縦方向旋回させることで、基板Wの上面のエッジに超音波洗浄液を噴射できる(図4A)。逆に、ノズル435を基板Wの上面より低い位置まで下降させ、ノズル435がやや上向きとなるよう縦方向旋回させることで、基板Wの下面のエッジに超音波洗浄液を噴射できる(図4B)。さらに、ノズル435を基板Wと同じ高さとし、ノズル435が水平向きとなるよう縦方向旋回させることで、基板Wのベベルに超音波洗浄液を噴射できる(図4C)。

With the above mechanism, the ultrasonic cleaning liquid can be sprayed over a wide area of the substrate W. For example, as shown in FIGS. 4A to 4C, the edge and bevel of the substrate W can be cleaned by moving the movable shaft 432 up and down and turning in the vertical direction. Specifically, the ultrasonic cleaning liquid can be sprayed onto the edge of the upper surface of the substrate W by raising the nozzle 435 to a position higher than the upper surface of the substrate W and turning the nozzle 435 in a vertical direction so that the nozzle 435 is slightly downward (FIG. 4A). ). Conversely, the ultrasonic cleaning liquid can be sprayed onto the edge of the lower surface of the substrate W by lowering the nozzle 435 to a position lower than the upper surface of the substrate W and turning it vertically so that the nozzle 435 is slightly upward (FIG. 4B). Further, the ultrasonic cleaning liquid can be sprayed onto the bevel of the substrate W by setting the nozzle 435 to the same height as the substrate W and turning the nozzle 435 in the vertical direction so that the nozzle 435 is horizontally oriented (FIG. 4C).


 なお、ノズル435を縦方向旋回、横方向旋回および上下動させる機構は上述したものには限られない。

In addition, the mechanism for moving the nozzle 435 in the vertical direction, the horizontal direction, and the vertical movement is not limited to that described above.


 基板Wを洗浄する際には、基板Wを回転させつつ、ノズル435を縦方向旋回および/または横方向旋回させながら基板Wに超音波洗浄液を噴射する。この際、噴射位置(超音波洗浄液が基板Wに着液する位置)に応じて、出力、スキャン速度、流量、溶存気体量を変化させるなど種々の制御を行ってもよい。

When cleaning the substrate W, the ultrasonic cleaning liquid is sprayed onto the substrate W while rotating the substrate W and rotating the nozzle 435 in the vertical direction and / or in the horizontal direction. At this time, various controls such as changing the output, the scanning speed, the flow rate, and the amount of dissolved gas may be performed according to the ejection position (position where the ultrasonic cleaning liquid is deposited on the substrate W).


 また、図5Aに示すように、水平方向に延びる旋回軸436によって支持軸431と可動軸432とが接続されていてもよい。これにより、可動軸432は旋回軸436を軸として支持軸431に対して鉛直面内で旋回可能となる。ノズル435の縦方向旋回と組み合わせることで、超音波洗浄液を基板Wの内側(中心に近い側)から外周(縁に近い側)に向かって噴射できる(図5B)。 

5A, the support shaft 431 and the movable shaft 432 may be connected by a pivot shaft 436 extending in the horizontal direction. As a result, the movable shaft 432 can turn in the vertical plane with respect to the support shaft 431 with the turning shaft 436 as an axis. By combining with the vertical rotation of the nozzle 435, the ultrasonic cleaning liquid can be sprayed from the inner side (side closer to the center) to the outer periphery (side closer to the edge) of the substrate W (FIG. 5B).


 近年基板表面に形成するパターンが微細化していることから、より微細なパーティクルを基板から除去する必要が生じてきているが、本実施形態の発明によれば、超音波洗浄液を用いて基板を洗浄しているため、適切に微細なパーティクルを除去できる。しかも、このように外周に向かって超音波洗浄液を噴射することで、基板Wの洗浄によって汚染された超音波洗浄液が基板Wの内側に向かうことなく素早く排出でき、さらに洗浄力が向上する。

In recent years, since the pattern formed on the substrate surface has become finer, it has become necessary to remove finer particles from the substrate. According to the invention of this embodiment, the substrate is cleaned using an ultrasonic cleaning liquid. Therefore, fine particles can be removed appropriately. In addition, by jetting the ultrasonic cleaning liquid toward the outer periphery in this way, the ultrasonic cleaning liquid contaminated by the cleaning of the substrate W can be quickly discharged without going to the inside of the substrate W, and the cleaning power is further improved.


 以上説明した基板洗浄装置4は、例えば以下のように動作する。

 図5Cは、基板洗浄装置4の処理動作の一例を示すフローチャートである。本フローチャートの一部または全部を行うよう制御部7あるいは別のコンピュータから基板洗浄装置3(の特にスピンドル41やノズル435を移動させるための機構)に指令を与えるようにしてもよく、そのような指令は所定のプログラムが実行されることによって発令されてもよい。

The substrate cleaning apparatus 4 described above operates, for example, as follows.

FIG. 5C is a flowchart illustrating an example of the processing operation of the substrate cleaning apparatus 4. A command may be given to the substrate cleaning apparatus 3 (particularly a mechanism for moving the spindle 41 and the nozzle 435) from the control unit 7 or another computer so as to perform part or all of this flowchart. The command may be issued by executing a predetermined program.


 まず、基板回転機構としてのスピンドル41は、基板Wを保持して回転させる(ステップS1)。

First, the spindle 41 as the substrate rotating mechanism holds and rotates the substrate W (step S1).


 そして、支持軸431が上昇することにより、超音波洗浄液源に連通したノズル435が基板Wの上面より高い位置まで上昇する。次いで、可動軸432が旋回軸436を軸として鉛直面内で旋回することによってノズル435が基板Wの水平方向内側まで移動する。さらに、ヘッド433が旋回軸434を軸として鉛直面内で旋回することによってノズル435が外向きとなる。以上により、図5Aに示すように、基板Wの上面のエッジに対して鋭角の入射角を有する向きにノズル435の噴射口が向いた状態となる(ステップS2)。

As the support shaft 431 is raised, the nozzle 435 communicating with the ultrasonic cleaning liquid source is raised to a position higher than the upper surface of the substrate W. Next, the movable shaft 432 rotates in the vertical plane with the rotation axis 436 as an axis, so that the nozzle 435 moves to the inner side in the horizontal direction of the substrate W. Further, the head 433 turns in the vertical plane around the turning shaft 434, so that the nozzle 435 faces outward. As a result, as shown in FIG. 5A, the injection port of the nozzle 435 is oriented in a direction having an acute incident angle with respect to the edge of the upper surface of the substrate W (step S2).


 この状態でノズル435から基板Wの上面のエッジに向かって超音波洗浄液を噴射する(ステップS3)。このとき、超音波洗浄液の基板W表面に対する入射角は鋭角となる。

In this state, an ultrasonic cleaning liquid is sprayed from the nozzle 435 toward the edge of the upper surface of the substrate W (step S3). At this time, the incident angle of the ultrasonic cleaning liquid with respect to the surface of the substrate W is an acute angle.


 超音波専用液の噴射すなわち基板Wの上面のエッジの洗浄が完了すると、可動軸432が旋回軸436を軸として鉛直面内で旋回することによってノズル435が基板Wの水平方向外側まで移動する(ステップS4)。

When the ejection of the ultrasonic dedicated liquid, that is, the cleaning of the edge of the upper surface of the substrate W is completed, the movable shaft 432 pivots in the vertical plane around the pivot shaft 436, whereby the nozzle 435 moves to the outside in the horizontal direction of the substrate W ( Step S4).


 そして、支持軸431が下降することにより、ノズル435が基板Wの下面より低い位置まで下降する。次いで、可動軸432が旋回軸436を軸として鉛直面内で旋回することによってノズル435が基板Wの水平方向内側まで移動する。さらに、ヘッド433が旋回軸434を軸として鉛直面内で旋回することによってノズル435が外向きとなる(ステップS5)。以上により、基板Wの下面のエッジに対して鋭角の入射角を有する向きにノズル435の噴射口が向いた状態となる。

Then, when the support shaft 431 is lowered, the nozzle 435 is lowered to a position lower than the lower surface of the substrate W. Next, the movable shaft 432 rotates in the vertical plane with the rotation axis 436 as an axis, so that the nozzle 435 moves to the inner side in the horizontal direction of the substrate W. Further, the head 433 turns in the vertical plane around the turning axis 434, so that the nozzle 435 is directed outward (step S5). As described above, the injection port of the nozzle 435 is in a state in which it has an acute incident angle with respect to the edge of the lower surface of the substrate W.


 この状態でノズル435から基板Wの下面のエッジに向かって超音波洗浄液を噴射する(ステップS6)。このとき、超音波洗浄液の基板W裏面に対する入射角は鋭角となる。

In this state, the ultrasonic cleaning liquid is sprayed from the nozzle 435 toward the edge of the lower surface of the substrate W (step S6). At this time, the incident angle of the ultrasonic cleaning liquid with respect to the back surface of the substrate W is an acute angle.


 超音波専用液の噴射すなわち基板Wの裏面のエッジの洗浄が完了すると、可動軸432が旋回軸436を軸として鉛直面内で旋回することによってノズル435が基板Wの水平方向外側まで移動する(ステップS7)。

When the ejection of the ultrasonic dedicated liquid, that is, the cleaning of the edge of the back surface of the substrate W is completed, the movable shaft 432 pivots in the vertical plane with the pivot shaft 436 as an axis, whereby the nozzle 435 moves to the outside in the horizontal direction of the substrate W ( Step S7).


 そして、支持軸431が上昇することにより、ノズル435が基板Wと同じ位置まで上昇する。次いで、ヘッド433が旋回軸434を軸として鉛直面内で旋回することによってノズル435は水平向きとなり、図4Cの状態となる(ステップS8)。

As the support shaft 431 is raised, the nozzle 435 is raised to the same position as the substrate W. Next, the head 433 rotates in the vertical plane with the rotation axis 434 as an axis, so that the nozzle 435 is oriented horizontally and is in the state shown in FIG. 4C (step S8).


 この状態でノズル435から基板Wのベベルに向かって超音波洗浄液を噴射する(ステップS9)。超音波洗浄液の噴射すなわちベベルの洗浄が完了すると、スピンドル41から基板Wが外される(ステップS10)。

In this state, the ultrasonic cleaning liquid is sprayed from the nozzle 435 toward the bevel of the substrate W (step S9). When spraying of the ultrasonic cleaning liquid, that is, cleaning of the bevel is completed, the substrate W is removed from the spindle 41 (step S10).


 以上説明したように、第1の実施形態では、ノズル435が縦方向旋回および横方向旋回可能である。よって、基板Wの広い領域を洗浄可能となり、洗浄力が向上する。

As described above, in the first embodiment, the nozzle 435 is capable of vertical turning and horizontal turning. Therefore, a wide region of the substrate W can be cleaned, and the cleaning power is improved.


 なお、超音波洗浄液の噴射対象は基板Wに限られない。ノズル435が縦方向旋回や横方向旋回可能であることにより、基板洗浄装置4の一部(例えば、スピンドル41やカップ)に超音波洗浄液を噴射でき、これらの洗浄も可能である。

In addition, the injection target of the ultrasonic cleaning liquid is not limited to the substrate W. Since the nozzle 435 can be turned in the vertical direction and the horizontal direction, the ultrasonic cleaning liquid can be sprayed onto a part of the substrate cleaning apparatus 4 (for example, the spindle 41 and the cup), and these cleanings are also possible.


(第2の実施形態)

 次に説明する第2の実施形態は、ロール型の洗浄部材を備える基板洗浄装置4に関する。

(Second Embodiment)

A second embodiment to be described next relates to a substrate cleaning apparatus 4 including a roll-type cleaning member.


 図6A~図6Cは、それぞれ、第2の実施形態に係る基板洗浄装置4’の概略構成を示す斜視図、上面図および側面図である。以下、第1の実施形態との相違点を中心に説明する。

6A to 6C are a perspective view, a top view, and a side view, respectively, showing a schematic configuration of a substrate cleaning apparatus 4 ′ according to the second embodiment. Hereinafter, a description will be given focusing on differences from the first embodiment.


 この基板洗浄装置4’は、ロール型洗浄具451と、その直下に配置されたロール型洗浄具452を備えている。ロール型洗浄具451,452は長尺状であり、一実施形態においては、望ましくは、基板Wの縁から反対側の縁まで延びており、基板Wの中心を通る。ノズル435は縦方向旋回および/または横方向旋回しながら基板W(より詳しくは、ロール型洗浄具451,452よりノズル435に近い側)に超音波洗浄液を噴射しつつ、ロール型洗浄具451,452はそれぞれ基板Wの上面および下面に接触しながら各面を洗浄する。

The substrate cleaning apparatus 4 ′ includes a roll-type cleaning tool 451 and a roll-type cleaning tool 452 arranged immediately below the roll-type cleaning tool 451. The roll-type cleaning tools 451 and 452 are elongated, and in one embodiment, desirably extend from the edge of the substrate W to the opposite edge and pass through the center of the substrate W. While the nozzle 435 rotates in the vertical direction and / or in the horizontal direction, the ultrasonic cleaning liquid is sprayed onto the substrate W (more specifically, the side closer to the nozzle 435 than the roll type cleaning tools 451 and 452), while the roll type cleaning tool 451. 452 cleans each surface while contacting the upper and lower surfaces of the substrate W, respectively.


 この場合、ノズル435からの噴射方向は、ロール型洗浄具451,452の長手方向と平行でもよいし、垂直でもよいが、図6Bに示すように、斜め方向(ロール型洗浄具451,452の長手方向と、噴射方向とのなす角が0度より大きく90度未満)であるのが望ましい。

In this case, the injection direction from the nozzle 435 may be parallel to the longitudinal direction of the roll-type cleaning tools 451 and 452, or may be vertical, but as shown in FIG. It is desirable that the angle formed by the longitudinal direction and the injection direction is greater than 0 degree and less than 90 degrees.


 また、図6Cに示すように、ロール型洗浄具451が基板Wに接触する近辺において、ロール型洗浄具451の回転方向とノズル435からの噴射方向とが一致していてもよいし、一致していなくてもよい。

 ただし、ロール型洗浄具451と基板Wの接触部位への超音波洗浄液の速やかな供給と、接触部位を通過した超音波洗浄液の速やかな排出を考慮すると、ロール型洗浄具451の回転方向とノズル435からの噴射方向とが一致していることが望ましい。

In addition, as shown in FIG. 6C, in the vicinity where the roll-type cleaning tool 451 contacts the substrate W, the rotation direction of the roll-type cleaning tool 451 may coincide with the injection direction from the nozzle 435. It does not have to be.

However, considering the rapid supply of the ultrasonic cleaning liquid to the contact portion between the roll-type cleaning tool 451 and the substrate W and the quick discharge of the ultrasonic cleaning liquid that has passed through the contact portion, the rotation direction of the roll-type cleaning tool 451 and the nozzle It is desirable that the injection direction from 435 matches.


 さらに、図7に示すように、ノズル435が基板Wの下面より低い位置まで下降することにより、超音波洗浄液は基板Wの下面に噴射される。基板Wの下面に超音波洗浄液を噴射する場合も、ロール型洗浄具452が基板Wに接触する近辺において、ロール型洗浄具452の回転方向とノズル435からの噴射方向とが一致していてもよいし、一致していなくてもよい。ただし、基板Wの上面と同様、一致しているのが望ましい。

Further, as shown in FIG. 7, the ultrasonic cleaning liquid is sprayed onto the lower surface of the substrate W when the nozzle 435 is lowered to a position lower than the lower surface of the substrate W. Even when the ultrasonic cleaning liquid is sprayed onto the lower surface of the substrate W, even when the roll cleaning tool 452 is in contact with the substrate W, the rotation direction of the roll cleaning tool 452 and the spraying direction from the nozzle 435 coincide with each other. It does not have to match. However, it is desirable that they coincide with the upper surface of the substrate W.


 このように、本実施形態では、超音波洗浄液による洗浄のみならず、ロール型洗浄具451,452でも洗浄を行う。そのため、洗浄力が向上する。また、ノズル435が縦方向旋回や横方向旋回が可能であることにより、ロール型洗浄具451,452に超音波洗浄液を噴射できる。 なお、本実施形態の変形実施例としては、ロール型洗浄具451の直下に配置されたロール型洗浄具452として、基板の半径以上で基板の直径未満の長さのロール型洗浄具を用い、基板洗浄時に長さ方向である回転軸周りにロール洗浄具を回転させながら基板に接触させてもよい。また、基板の裏面(下側面)にロール洗浄具452を接触させながら、洗浄液を基板の裏面(下側面)に供給するようにしてもよい。この場合、ロール洗浄具452の傾きを自在に調整する傾き調整機構と、傾き調整機構を基板に対して昇降させる昇降手段とを更に設ける。こうした構成を採用すれば、縦方向旋回や横方向旋回が可能なノズル435によりロール型洗浄具451,452に超音波洗浄液が噴射されるだけでなく、ロール型洗浄具452の基板Wに対する傾きや昇降動作を自在に調整できるので、基板Wの表面側のベベルだけでなく裏面側の周辺領域(ベベル及びエッジ)についてもより確実に洗浄することができる。さらなる変形実施例としては、ロール型洗浄具451についても基板の半径以上で基板の直径未満の長さのロール型洗浄具を用い、かつ、基板Wに対する傾きや昇降動作を自在に調整できる機構を設けることもできる。



As described above, in this embodiment, cleaning is performed not only with the ultrasonic cleaning liquid but also with the roll-type cleaning tools 451 and 452. Therefore, the cleaning power is improved. In addition, since the nozzle 435 can be turned in the vertical direction or the horizontal direction, the ultrasonic cleaning liquid can be sprayed onto the roll-type cleaning tools 451 and 452. As a modified example of the present embodiment, as the roll-type cleaning tool 452 disposed immediately below the roll-type cleaning tool 451, a roll-type cleaning tool having a length that is greater than the radius of the substrate and less than the diameter of the substrate is used. You may make it contact a board | substrate, rotating a roll cleaning tool around the rotating shaft which is a length direction at the time of board | substrate cleaning. Moreover, you may make it supply a washing | cleaning liquid to the back surface (lower side) of a board | substrate, making the roll cleaning tool 452 contact the back surface (lower side) of a board | substrate. In this case, an inclination adjustment mechanism that freely adjusts the inclination of the roll cleaning tool 452 and an elevating unit that elevates and lowers the inclination adjustment mechanism with respect to the substrate are further provided. By adopting such a configuration, not only the ultrasonic cleaning liquid is sprayed onto the roll-type cleaning tools 451 and 452 by the nozzle 435 capable of vertical and horizontal rotation, but also the inclination of the roll-type cleaning tool 452 with respect to the substrate W, Since the raising / lowering operation can be freely adjusted, not only the bevel on the front side of the substrate W but also the peripheral area (bevel and edge) on the back side can be more reliably cleaned. As a further modified embodiment, a roll-type cleaning tool 451 having a length that is greater than the radius of the substrate and less than the diameter of the substrate is used, and a mechanism that can freely adjust the tilt and the lifting operation with respect to the substrate W is provided. It can also be provided.



(第3の実施形態)

 上述した第1および第2の実施形態は、いずれも基板Wを水平方向に保持することを念頭に置いていた。これに対し、次に説明する第3の実施形態は基板Wを非水平方向に保持するものである。非水平方向には、鉛直方向(垂直方向)や、水平面に対して所定角度で傾斜させた方向が含まれる。

(Third embodiment)

In both the first and second embodiments described above, the substrate W is held in the horizontal direction in mind. On the other hand, a third embodiment described below holds the substrate W in a non-horizontal direction. The non-horizontal direction includes a vertical direction (vertical direction) and a direction inclined at a predetermined angle with respect to a horizontal plane.


 図8Aおよび図8Bに示す実施形態では、それぞれ、第3の実施形態に係る基板洗浄装置4’’の概略構成を示す正面図および側面図である。本基板洗浄装置4’’は、基板Wの下側を保持して回転させる2つのスピンドル41と、上側を保持して回転させる2つのスピンドル41とを備えている。これらのスピンドル41が同一鉛直面内に配置されることで、基板Wは鉛直方向に保持される。

In the embodiment shown in FIGS. 8A and 8B, respectively, a front view and a side view showing a schematic configuration of a substrate cleaning apparatus 4 ″ according to the third embodiment. The substrate cleaning apparatus 4 ″ includes two spindles 41 that rotate while holding the lower side of the substrate W, and two spindles 41 that rotate while holding the upper side. By arranging these spindles 41 in the same vertical plane, the substrate W is held in the vertical direction.


 また、基板洗浄装置4’’は4つの超音波洗浄液供給装置42A~42Dを備え得る。超音波洗浄液供給装置42Aは、基板Wの中心の鉛直方向上方に配置され、そのノズル435Aから下向きに超音波洗浄液を噴射する。超音波洗浄液供給装置42Bは、基板Wの中心の鉛直方向下方に配置され、そのノズル435Bから上向きに超音波洗浄液を噴射する。超音波洗浄液供給装置42Cは、基板Wの中心の斜め上方に配置され、そのノズル435Cから基板Wの中心に向かって斜め下向きに超音波洗浄液を噴射する。超音波洗浄液供給装置42Dは、基板Wの中心の斜め下方に配置され、そのノズル435Dから基板Wの中心に向かって斜め上向きに超音波洗浄液を噴射する。

Further, the substrate cleaning device 4 ″ may include four ultrasonic cleaning liquid supply devices 42A to 42D. The ultrasonic cleaning liquid supply device 42A is disposed vertically above the center of the substrate W and ejects the ultrasonic cleaning liquid downward from the nozzle 435A. The ultrasonic cleaning liquid supply device 42B is disposed below the center of the substrate W in the vertical direction, and jets the ultrasonic cleaning liquid upward from the nozzle 435B. The ultrasonic cleaning liquid supply device 42 </ b> C is disposed obliquely above the center of the substrate W, and ejects the ultrasonic cleaning liquid obliquely downward from the nozzle 435 </ b> C toward the center of the substrate W. The ultrasonic cleaning liquid supply device 42D is disposed obliquely below the center of the substrate W, and jets the ultrasonic cleaning liquid obliquely upward from the nozzle 435D toward the center of the substrate W.


 図示を省略しているが、超音波洗浄液供給装置42A~42Dの少なくとも一部は、第1の実施形態で説明した構造となっており、旋回軸434を軸とした基板Wと垂直な面内での旋回、可動軸432を軸とした基板Wと平行な面内での旋回および/または上下動が可能であるのが望ましい。

Although not shown, at least a part of the ultrasonic cleaning liquid supply devices 42A to 42D has the structure described in the first embodiment, and is in a plane perpendicular to the substrate W with the pivot axis 434 as an axis. It is desirable to be able to turn and / or move up and down in a plane parallel to the substrate W with the movable shaft 432 as an axis.


 なお、基板洗浄装置4’’は少なくとも1つの超音波洗浄液供給装置42を備えていればよく、その数や配置に特に制限はない。

The substrate cleaning device 4 ″ only needs to include at least one ultrasonic cleaning liquid supply device 42, and the number and arrangement thereof are not particularly limited.


 変形例として、第2の実施形態と同様に、ロール型洗浄具451,452が設けられていてもよい(図9Aおよび図9B)。また、上側のスピンドル41と、下側のスピンドル41とを同一鉛直面内に配置しないことで、基板Wを斜め方向に保持してもよく(図10)、加えてロール型洗浄具が設けられていてもよい(不図示)。

 以上説明したように、基板Wを非水平方向に保持して回転させてもよい。

As a modification, roll-type cleaning tools 451 and 452 may be provided as in the second embodiment (FIGS. 9A and 9B). Further, by not arranging the upper spindle 41 and the lower spindle 41 in the same vertical plane, the substrate W may be held in an oblique direction (FIG. 10), and in addition, a roll-type cleaning tool is provided. (Not shown).

As described above, the substrate W may be held and rotated in a non-horizontal direction.


(その他の実施形態)

 図11に示すように、ノズル435から超音波洗浄液を霧状に噴射(噴霧)してもよい。振動エネルギーを得た超音波洗浄液を噴霧供給することで、基板Wに対するダメージを抑えつつ、基板Wの表面のパーティクルを除去できる。特に、大きなパーティクルの除去には超音波の周波数を低く(例えば、数10kHz~500kHz)する必要があり、その場合は基板Wにダメージを与える可能性もあるが、霧状に噴霧することでダメージを抑えられる。

(Other embodiments)

As shown in FIG. 11, the ultrasonic cleaning liquid may be sprayed (sprayed) from the nozzle 435 in a mist form. By spraying and supplying the ultrasonic cleaning liquid having vibration energy, particles on the surface of the substrate W can be removed while suppressing damage to the substrate W. In particular, it is necessary to lower the frequency of ultrasonic waves (for example, several tens of kHz to 500 kHz) to remove large particles. In this case, the substrate W may be damaged. Can be suppressed.


 図12は、チャック爪で基板Wを保持して回転させる基板洗浄装置4’’’の概略構成を示す斜視図である。本基板洗浄装置4’’’は、図2A等のスピンドル41に代えて、チャック爪511および回転駆動軸512を備えている。

FIG. 12 is a perspective view showing a schematic configuration of a substrate cleaning apparatus 4 ′ ″ that holds and rotates the substrate W with chuck claws. The substrate cleaning apparatus 4 ′ ″ includes a chuck claw 511 and a rotation drive shaft 512 instead of the spindle 41 in FIG. 2A and the like.


 チャック爪511は、基板Wの外周端部(エッジ部分)を把持して基板Wを保持するように設けられた保持部材である。隣り合うチャック爪511同士の間には、基板Wを搬送するロボットハンド(不図示)の動きを阻害しない間隔が設けられている。チャック爪511は、基板Wの面を水平にして保持できるように、それぞれ回転駆動軸512に接続されている。

The chuck claw 511 is a holding member provided to hold the substrate W by holding the outer peripheral end (edge portion) of the substrate W. An interval is provided between adjacent chuck claws 511 that does not hinder the movement of a robot hand (not shown) that transports the substrate W. The chuck claws 511 are each connected to the rotation drive shaft 512 so that the surface of the substrate W can be held horizontally.


 回転駆動軸512は、基板Wの面に対して垂直に延びる軸線まわりに回転することができ、回転駆動軸512の軸線まわりの回転により基板Wを水平面内で回転させることができるように構成されている。回転駆動軸512の回転方向や回転数は図1の制御部7が制御する。回転数は一定でもよいし、可変でもよい。また、チャック爪511の外側にあって基板Wの周囲を覆い、回転駆動軸512と同期して回転する回転カップを設けてもよい。

The rotation drive shaft 512 can be rotated around an axis extending perpendicularly to the surface of the substrate W, and the substrate W can be rotated in a horizontal plane by rotation around the axis of the rotation drive shaft 512. ing. The control unit 7 in FIG. 1 controls the rotation direction and the number of rotations of the rotation drive shaft 512. The rotation speed may be constant or variable. Further, a rotary cup that covers the periphery of the substrate W outside the chuck claws 511 and rotates in synchronization with the rotation drive shaft 512 may be provided.


 このような構成の場合、超音波洗浄液をチャック爪511や回転カップに噴射してもよい。ここで、基板洗浄装置4の筐体の上部に設けられた図示しないFFU部、又は、筐体に設けられた基板を出し入れするためのシャッター機構から、筐体内部に流入するガスの流れが、基板洗浄装置4の筐体の下部の排出部から排出されるようにし、ダウンフローが筐体内に形成されるようにすることができる。さらに、前述の回転カップに、排液を排出するための排出孔を設けてもよく、ダウンフローがこの排出孔から筐体下部の排出部から排出されるとともに、超音波洗浄液を回転カップに噴射して、回転カップの洗浄済み排液を、ダウンフローの気流の流れに沿って、回転カップの下方の排出孔から、回転カップの下方に位置している受液容器に受け入れて、これを排出管から確実に排出するようにすることもできる。こうした構成をとることで、回転カップや基板チャック爪511に付着しがちなパーティクルを確実に除去して、基板の再汚染を防止できるだけでなく、基板の外周端部(エッジ部分)をも確実に洗浄することが期待できる。

In such a configuration, the ultrasonic cleaning liquid may be sprayed onto the chuck claws 511 and the rotating cup. Here, the flow of gas flowing into the housing from the FFU unit (not shown) provided in the upper part of the housing of the substrate cleaning apparatus 4 or the shutter mechanism for taking in and out the substrate provided in the housing is as follows. The substrate cleaning device 4 can be discharged from the lower discharge portion of the housing, and a downflow can be formed in the housing. Furthermore, the above-mentioned rotating cup may be provided with a discharge hole for discharging the drainage liquid, and the downflow is discharged from the discharge portion at the bottom of the housing through this discharge hole and the ultrasonic cleaning liquid is sprayed onto the rotating cup. Then, the washed drained liquid from the rotating cup is received from the discharge hole below the rotating cup into the liquid receiving container located below the rotating cup along the flow of the downflow airflow, and discharged. It is also possible to ensure that the tube is discharged. By adopting such a configuration, particles that tend to adhere to the rotating cup and the substrate chuck claw 511 can be reliably removed to prevent re-contamination of the substrate, and the outer peripheral edge (edge portion) of the substrate can also be reliably secured. Expect to be washed.


 その他の基板洗浄装置の構成例として、スピンドル41やチャック爪511で基板Wを回転させるのではなく、基板Wを下方からステージ上に支持してステージを回転させてもよい。また、洗浄具として、図6A等に例示したロール型のものではなく、いわゆるペンシルスポンジ型の洗浄具を用い、基板W上を揺動させながら洗浄してもよい。また、基板Wの一面(例えば上面)をペンシルスポンジ型の洗浄具で、他面(例えば下面)をロール型の洗浄具で洗浄してもよい。また、本明細書で説明した各態様を適宜組み合わせてもよい。

As another configuration example of the substrate cleaning apparatus, instead of rotating the substrate W by the spindle 41 or the chuck claw 511, the substrate W may be supported on the stage from below and the stage may be rotated. Further, as a cleaning tool, a so-called pencil sponge type cleaning tool may be used instead of the roll type illustrated in FIG. Alternatively, one surface (for example, the upper surface) of the substrate W may be cleaned with a pencil sponge type cleaning tool, and the other surface (for example, the lower surface) may be cleaned with a roll type cleaning tool. Moreover, you may combine suitably each aspect demonstrated in this specification.

[符号の説明]
3 基板研磨装置
4,4’,4’’,4’’’ 基板洗浄装置
41 スピンドル
42,42A~42D 超音波洗浄液供給装置
431 支持軸
432 可動軸
433 ヘッド
434 旋回軸
435,435A~435D ノズル
436 旋回軸
451,452 ロール型洗浄具
511 チャック爪
512 回転駆動軸
[Explanation of symbols]
3 Substrate polishing device 4, 4 ′, 4 ″, 4 ′ ″ Substrate cleaning device 41 Spindle 42, 42A to 42D Ultrasonic cleaning liquid supply device 431 Support shaft 432 Moving shaft 433 Head 434 Rotating shaft 435, 435A to 435D Nozzle 436 Rotating shaft 451, 452 Roll type cleaning tool 511 Chuck claw 512 Rotation drive shaft

 超音波洗浄液が帯電していると、洗浄時に基板を破損してしまうおそれがある。第4,5の実施形態の課題は、基板を適切に洗浄し、しかも基板を破損するリスクを低減できる超音波洗浄液供給装置および基板洗浄装置を提供することである。
 以下で詳しく説明するように、第4,5の実施形態によれば、基板を適切に洗浄でき、しかも基板を洗浄する際に、超音波洗浄液の帯電が抑制され、洗浄時に基板を破損するリスクを低減できる。なお、第4,5の実施形態では、第1~3の実施形態とは別個に符号を付している。
If the ultrasonic cleaning liquid is charged, the substrate may be damaged during cleaning. The problem of the fourth and fifth embodiments is to provide an ultrasonic cleaning liquid supply device and a substrate cleaning device that can clean the substrate appropriately and reduce the risk of damaging the substrate.
As will be described in detail below, according to the fourth and fifth embodiments, the substrate can be properly cleaned, and the risk of damaging the substrate during cleaning is suppressed when charging the ultrasonic cleaning liquid when cleaning the substrate. Can be reduced. In the fourth and fifth embodiments, reference numerals are assigned separately from the first to third embodiments.

 (第4の実施形態)
 図13は、一実施形態に係る基板処理装置の概略上面図である。本基板処理装置は、直径300mmあるいは450mmの半導体ウエハ、フラットパネル、CMOS(Complementary Metal Oxide Semiconductor)やCCD(Charge Coupled Device)などのイメージセンサ、MRAM(Magnetoresistive Random Access Memory)における磁性膜の製造工程
において、種々の基板を処理するものである。また、基板の形状は円形に限られず、矩形形状(角形状)や、多角形形状のものであってもよい。
(Fourth embodiment)
FIG. 13 is a schematic top view of a substrate processing apparatus according to an embodiment. This substrate processing apparatus is used in the manufacturing process of a magnetic film in a semiconductor wafer having a diameter of 300 mm or 450 mm, a flat panel, an image sensor such as a CMOS (Complementary Metal Oxide Semiconductor) or a CCD (Charge Coupled Device), or an MRAM (Magnetoresistive Random Access Memory). Process various substrates. Further, the shape of the substrate is not limited to a circle, but may be a rectangular shape (square shape) or a polygonal shape.

 基板処理装置は、略矩形状のハウジング1と、多数の基板をストックする基板カセットが載置されるロードポート2と、1または複数(図13に示す態様では4つ)の基板研磨装置3と、1または複数(図13に示す態様では2つ)の基板洗浄装置4と、基板乾燥装置5と、搬送機構6a~6dと、制御部7とを備えている。 The substrate processing apparatus includes a substantially rectangular housing 1, a load port 2 on which a substrate cassette for stocking a large number of substrates is placed, and one or a plurality (four in the embodiment shown in FIG. 13) of substrate polishing apparatuses 3. One or a plurality of (two in the embodiment shown in FIG. 13) substrate cleaning device 4, a substrate drying device 5, transport mechanisms 6a to 6d, and a control unit 7 are provided.

 ロードポート2は、ハウジング1に隣接して配置されている。ロードポート2には、オープンカセット、SMIF(Standard Mechanical Interface)ポッド、又はFOUP(Front Opening Unified Pod)を搭載することができる。SMIFポッド、FOUPは、内部に基板カセットを収納し、隔壁で覆うことにより、外部空間とは独立した環境を保つことができる密閉容器である。基板としては、例えば半導体ウエハ等を挙げることができる。 The load port 2 is disposed adjacent to the housing 1. The load port 2 can be equipped with an open cassette, SMIF (Standard Mechanical Interface) pod, or FOUP (Front Opening Unified Pod). SMIF pods and FOUPs are sealed containers that can maintain an environment independent of the external space by accommodating a substrate cassette inside and covering with a partition wall. Examples of the substrate include a semiconductor wafer.

 基板を研磨する基板研磨装置3、研磨後の基板を洗浄する基板洗浄装置4、洗浄後の基板を乾燥させる基板乾燥装置5は、ハウジング1内に収容されている。基板研磨装置3は、基板処理装置の長手方向に沿って配列され、基板洗浄装置4および基板乾燥装置5も基板処理装置の長手方向に沿って配列されている。また、基板洗浄装置4および基板乾燥装置5は、それぞれ、図示しない略矩形状の筐体であって、シャッター機構により開閉自在とされ筐体部に設けられた開閉部から被処理対象の基板を出し入れするように構成されていてもよい。あるいは、変形実施例としては、基板洗浄装置4および基板乾燥装置5を一体化し、基板洗浄処理と基板乾燥処理とを連続的に1つのユニット内で行うようにしてもよい。
 なお、更に別の変形実施例としては、基板研磨装置3に代えて、例えば、基板をめっき処理するめっき装置や、ベベル部を研磨するベベル研磨装置を採用してもよい。 
A substrate polishing apparatus 3 for polishing the substrate, a substrate cleaning apparatus 4 for cleaning the polished substrate, and a substrate drying apparatus 5 for drying the cleaned substrate are accommodated in the housing 1. The substrate polishing apparatus 3 is arranged along the longitudinal direction of the substrate processing apparatus, and the substrate cleaning apparatus 4 and the substrate drying apparatus 5 are also arranged along the longitudinal direction of the substrate processing apparatus. Each of the substrate cleaning device 4 and the substrate drying device 5 is a substantially rectangular housing (not shown), and can be opened and closed by a shutter mechanism, and the substrate to be processed is opened from an opening / closing portion provided in the housing portion. It may be configured to take in and out. Alternatively, as a modified embodiment, the substrate cleaning device 4 and the substrate drying device 5 may be integrated, and the substrate cleaning process and the substrate drying process may be performed continuously in one unit.
As still another modified embodiment, instead of the substrate polishing apparatus 3, for example, a plating apparatus for plating a substrate or a bevel polishing apparatus for polishing a bevel portion may be employed.

 本実施形態では、基板洗浄装置4が、ペン型洗浄具を用いた接触洗浄と、超音波洗浄水を用いた非接触洗浄とを行う。詳細は後述するが、ペン型洗浄具を用いた接触洗浄とは、洗浄液の存在下で、鉛直方向に延びる円柱状のペンシル型洗浄具の下端接触面を基板に接触させ、洗浄具を自転させながら一方向に向けて移動させて、基板の表面をスクラブ洗浄するものである。 In the present embodiment, the substrate cleaning device 4 performs contact cleaning using a pen-type cleaning tool and non-contact cleaning using ultrasonic cleaning water. Although details will be described later, contact cleaning using a pen-type cleaning tool refers to contacting the lower end contact surface of a cylindrical pencil-type cleaning tool extending in the vertical direction with a substrate in the presence of a cleaning liquid, and rotating the cleaning tool. However, it is moved in one direction to scrub the surface of the substrate.

 基板乾燥装置5は、水平に回転する基板に向けて、移動する噴射ノズルからIPA蒸気を噴出して基板を乾燥させ、さらに基板を高速で回転させて遠心力によって基板を乾燥させるスピン乾燥ユニットが使用され得る。 The substrate drying apparatus 5 includes a spin drying unit that blows IPA vapor from a moving spray nozzle toward a horizontally rotating substrate to dry the substrate, and further rotates the substrate at high speed to dry the substrate by centrifugal force. Can be used.

 ロードポート2、ロードポート2側に位置する基板研磨装置3および基板乾燥装置5に囲まれた領域には、搬送機構6aが配置されている。また、基板研磨装置3ならびに基板洗浄装置4および基板乾燥装置5と平行に、搬送機構6bが配置されている。搬送機構6aは、研磨前の基板をロードポート2から受け取って搬送機構6bに受け渡したり、基板乾燥装置5から取り出された乾燥後の基板を搬送機構6bから受け取ったりする。 In a region surrounded by the load port 2 and the substrate polishing apparatus 3 and the substrate drying apparatus 5 located on the load port 2 side, a transport mechanism 6a is arranged. Further, a transport mechanism 6 b is arranged in parallel with the substrate polishing apparatus 3, the substrate cleaning apparatus 4 and the substrate drying apparatus 5. The transport mechanism 6a receives the substrate before polishing from the load port 2 and delivers it to the transport mechanism 6b, or receives the dried substrate taken out from the substrate drying apparatus 5 from the transport mechanism 6b.

 2つの基板洗浄装置4間に、これら基板洗浄装置4間で基板の受け渡しを行う搬送機構6cが配置され、基板洗浄装置4と基板乾燥装置5との間に、これら基板洗浄装置4と基板乾燥装置5間で基板の受け渡しを行う搬送機構6cが配置されている。 Between the two substrate cleaning apparatuses 4, a transfer mechanism 6 c for transferring the substrate between the substrate cleaning apparatuses 4 is disposed, and between the substrate cleaning apparatus 4 and the substrate drying apparatus 5, the substrate cleaning apparatus 4 and the substrate drying are disposed. A transport mechanism 6c that transfers substrates between the apparatuses 5 is disposed.

 さらに、ハウジング1の内部には、基板処理装置の各機器の動きを制御する制御部7が配置されている。本実施形態では、ハウジング1の内部に制御部7が配置されている態様を用いて説明するが、これに限られることはなく、ハウジング1の外部に制御部7が配置されてもよい。 Further, a control unit 7 for controlling the movement of each device of the substrate processing apparatus is disposed inside the housing 1. Although this embodiment demonstrates using the aspect by which the control part 7 is arrange | positioned inside the housing 1, it is not restricted to this, The control part 7 may be arrange | positioned outside the housing 1. FIG.

 図14および図15は、それぞれ第1の実施形態に係る基板洗浄装置4の平面図および側面図である。基板洗浄装置4は、基板回転機構41と、ペン洗浄機構42と、超音波洗浄液供給装置43とを備え、これらがシャッタ44aを有する筐体44内に収納されている。また、基板洗浄装置4内の各部は図13の制御部7により制御される。 14 and 15 are a plan view and a side view, respectively, of the substrate cleaning apparatus 4 according to the first embodiment. The substrate cleaning device 4 includes a substrate rotation mechanism 41, a pen cleaning mechanism 42, and an ultrasonic cleaning liquid supply device 43, which are housed in a housing 44 having a shutter 44a. Each part in the substrate cleaning apparatus 4 is controlled by the control unit 7 in FIG.

 基板回転機構41は、チャック爪411と、回転駆動軸412とを有する。
 チャック爪411は、洗浄対象である基板Wの外周端部(エッジ部分)を把持して基板Wを保持するように設けられた保持部材である。本実施形態では、チャック爪411が4つ設けられており、隣り合うチャック爪411同士の間には、基板Wを搬送するロボットハンド(不図示)の動きを阻害しない間隔が設けられている。チャック爪411は、基板Wの面を水平にして保持できるように、それぞれ回転駆動軸412に接続されている。本実施形態では、基板Wの表面WAが上向きとなるように、基板Wがチャック爪411に保持される。
The substrate rotation mechanism 41 includes a chuck claw 411 and a rotation drive shaft 412.
The chuck claw 411 is a holding member provided to hold the substrate W by holding the outer peripheral end (edge portion) of the substrate W to be cleaned. In this embodiment, four chuck claws 411 are provided, and an interval is provided between adjacent chuck claws 411 that does not hinder the movement of a robot hand (not shown) that transports the substrate W. The chuck claws 411 are each connected to the rotation drive shaft 412 so that the surface of the substrate W can be held horizontally. In the present embodiment, the substrate W is held by the chuck claws 411 so that the surface WA of the substrate W faces upward.

 回転駆動軸412は、基板Wの面に対して垂直に延びる軸線まわりに回転することができ、回転駆動軸412の軸線まわりの回転により基板Wを水平面内で回転させることができるように構成されている。回転駆動軸412の回転方向や回転数は制御部7が制御する。回転数は一定でもよいし、可変でもよい。 The rotation drive shaft 412 can be rotated around an axis extending perpendicularly to the surface of the substrate W, and the substrate W can be rotated in a horizontal plane by rotation around the axis of the rotation drive shaft 412. ing. The controller 7 controls the rotation direction and the number of rotations of the rotation drive shaft 412. The rotation speed may be constant or variable.

 また、後述する洗浄液や超音波洗浄液が飛散するのを防止するために、基板回転機構41(より具体的には、そのチャック爪411)の外側にあって基板Wの周囲を覆い、回転駆動軸412と同期して回転する回転カップを設けてもよい。また、この回転カップは、図示しない洗浄ユニット上部のFFUからユニット内に供給されるダウンフローの気流が回転カップに設けられた孔を通過して下方に逃げるように構成されていてもよい。このように構成することで、洗浄液や超音波洗浄液が飛散するのをより確実に防止できる。 Further, in order to prevent a cleaning liquid and an ultrasonic cleaning liquid to be described later from splashing, the rotation outside of the substrate rotation mechanism 41 (more specifically, the chuck claw 411) covers the periphery of the substrate W, and rotates. A rotating cup that rotates in synchronization with 412 may be provided. Further, the rotary cup may be configured such that a downflow airflow supplied into the unit from an FFU above the cleaning unit (not shown) passes through a hole provided in the rotary cup and escapes downward. By comprising in this way, it can prevent more reliably that a washing | cleaning liquid and an ultrasonic cleaning liquid scatter.

 ペン洗浄機構42は、ペン型洗浄具421と、ペン型洗浄具421を支持するアーム422と、アーム422を移動させる移動機構423と、洗浄液ノズル424と、リンス液ノズル425と、クリーニング装置426とを有する。 The pen cleaning mechanism 42 includes a pen-type cleaning tool 421, an arm 422 that supports the pen-type cleaning tool 421, a moving mechanism 423 that moves the arm 422, a cleaning liquid nozzle 424, a rinse liquid nozzle 425, and a cleaning device 426. Have

 ペン型洗浄具421は、例えば円柱状のPVA(例えばスポンジ)製洗浄具であり、チャック爪411に保持された基板Wの上方に、軸線が基板Wと垂直になるように配設されている。ペン型洗浄具421は、その下面が基板Wを洗浄し、その上面がアーム422に支持されている。 The pen-type cleaning tool 421 is, for example, a cylindrical PVA (for example, sponge) cleaning tool, and is disposed above the substrate W held by the chuck claws 411 so that the axis is perpendicular to the substrate W. . The pen-type cleaning tool 421 has a lower surface that cleans the substrate W, and an upper surface that is supported by the arm 422.

 アーム422は平棒状の部材であり、典型的には長手方向が基板Wと平行になるように配設されている。アーム422は、一端でペン型洗浄具421をその軸線まわりに回転可能に支持しており、他端に移動機構423が接続されている。 The arm 422 is a flat bar-like member, and is typically arranged so that its longitudinal direction is parallel to the substrate W. The arm 422 supports the pen-shaped cleaning tool 421 at one end so as to be rotatable around its axis, and a moving mechanism 423 is connected to the other end.

 移動機構423は、アーム422を鉛直上下に移動させるとともに、アーム422を水平面内で揺動させる。移動機構423によるアーム422の水平方向への揺動は、アーム422の上記他端を中心として、ペン型洗浄具421の軌跡が円弧を描く態様となっている。移動機構423は、矢印Aで示すように、基板Wの中心と基板Wの外側の退避位置との間でペン型洗浄具421を揺動させることができる。移動機構423は制御部7によって制御される。 The moving mechanism 423 moves the arm 422 vertically up and down and swings the arm 422 in a horizontal plane. The movement of the arm 422 in the horizontal direction by the moving mechanism 423 is such that the locus of the pen-type cleaning tool 421 draws an arc around the other end of the arm 422. The moving mechanism 423 can swing the pen-type cleaning tool 421 between the center of the substrate W and the retracted position outside the substrate W as indicated by an arrow A. The moving mechanism 423 is controlled by the control unit 7.

 洗浄液ノズル424は、ペン型洗浄具421で基板Wを洗浄する際に、薬液や純水などの洗浄液を供給する。リンス液ノズル425は純水などのリンス液を基板Wに供給する。洗浄液ノズル424およびリンス液ノズル425は、基板Wの表面WA用のもののみならず、裏面WB用のものを設けるのが望ましい。洗浄液やリンス液の供給タイミングや供給量などは、制御部7によって制御される。 The cleaning liquid nozzle 424 supplies a cleaning liquid such as a chemical liquid or pure water when cleaning the substrate W with the pen-type cleaning tool 421. The rinse liquid nozzle 425 supplies a rinse liquid such as pure water to the substrate W. The cleaning liquid nozzle 424 and the rinsing liquid nozzle 425 are desirably provided not only for the front surface WA of the substrate W but also for the back surface WB. The supply timing and supply amount of the cleaning liquid and the rinse liquid are controlled by the control unit 7.

 クリーニング装置426は基板Wの配置位置より外側に配置され、移動機構423はペン型洗浄具421をクリーニング装置426上に移動させることができる。クリーニング装置426はペン型洗浄具421を洗浄する。 The cleaning device 426 is disposed outside the position where the substrate W is disposed, and the moving mechanism 423 can move the pen-type cleaning tool 421 onto the cleaning device 426. The cleaning device 426 cleans the pen type cleaning tool 421.

 以上説明したペン洗浄機構42において、基板Wが回転した状態で、洗浄液ノズル424から洗浄液を基板W上に供給しつつ、ペン型洗浄具421の下面が基板Wの表面WAに接触してアーム422を揺動させることで、基板Wが物理的に接触洗浄される。 In the pen cleaning mechanism 42 described above, while the substrate W is rotating, the cleaning liquid is supplied from the cleaning liquid nozzle 424 onto the substrate W, and the lower surface of the pen-type cleaning tool 421 contacts the surface WA of the substrate W so that the arm 422 is provided. By swinging, the substrate W is physically contact-cleaned.

 超音波洗浄液供給装置43は、基板Wを挟んで、ペン洗浄機構42とは反対側に配置される。そして、超音波洗浄液供給装置43は超音波が与えられた洗浄液(以下、超音波洗浄液ともいう)を用いて基板Wを非接触洗浄する。本実施形態は、超音波洗浄液供給装置43の構造に特徴があり、以下に詳しく説明する。 The ultrasonic cleaning liquid supply device 43 is disposed on the opposite side of the pen cleaning mechanism 42 with the substrate W interposed therebetween. The ultrasonic cleaning liquid supply device 43 cleans the substrate W in a non-contact manner using a cleaning liquid to which ultrasonic waves are applied (hereinafter also referred to as an ultrasonic cleaning liquid). This embodiment is characterized by the structure of the ultrasonic cleaning liquid supply device 43 and will be described in detail below.

 図16は、超音波洗浄液供給装置43の概略構成を模式的に示す図である。超音波洗浄液供給装置43は、超音波洗浄液生成装置70と、ノズル部71とを備えている。 FIG. 16 is a diagram schematically showing a schematic configuration of the ultrasonic cleaning liquid supply device 43. The ultrasonic cleaning liquid supply device 43 includes an ultrasonic cleaning liquid generation device 70 and a nozzle unit 71.

 超音波洗浄液生成装置70は筐体81および振動部82を有する。筐体81は下方が開口した空洞が内部にあり、その空洞は下方に向かって先細となっている。筐体81の一部には流路81aが形成されている。そして、筐体81の内部の空洞に振動部82が配置される。 The ultrasonic cleaning liquid generating apparatus 70 has a casing 81 and a vibrating part 82. The casing 81 has a cavity opened at the bottom, and the cavity is tapered downward. A channel 81 a is formed in a part of the housing 81. Then, the vibration unit 82 is disposed in a cavity inside the housing 81.

 筐体81の流路81aから(超音波が与えられる前の)洗浄液が筐体81内に供給される。洗浄液は、例えば純水であってもよいし薬液であってもよい。振動部82は洗浄液に超音波振動を与えることによって超音波洗浄液を生成する。超音波の振動数は、予め定めた固定の周波数であってもよいし、複数の周波数(例えば、900kHz程度の高周波と、430kHz程度の低周波)から選択できてもよい。生成された超音波洗浄水が筐体81内に収容される。 The cleaning liquid (before the ultrasonic wave is applied) is supplied into the casing 81 from the flow path 81 a of the casing 81. The cleaning liquid may be, for example, pure water or a chemical liquid. The vibration unit 82 generates ultrasonic cleaning liquid by applying ultrasonic vibration to the cleaning liquid. The frequency of the ultrasonic wave may be a predetermined fixed frequency, or may be selected from a plurality of frequencies (for example, a high frequency of about 900 kHz and a low frequency of about 430 kHz). The generated ultrasonic cleaning water is accommodated in the casing 81.

 ノズル部71は筐体81における開口部分に接続され、基板Wに向かって超音波洗浄液を噴射する。 The nozzle unit 71 is connected to an opening in the housing 81 and sprays ultrasonic cleaning liquid toward the substrate W.

 ここで、超音波洗浄液が帯電していると、洗浄時に基板Wを破損してしまうおそれがある。そこで、本実施形態では、筐体81における超音波洗浄液と接する面(接液部)の少なくとも一部(望ましくは全体)を導電性材料製とし、導電性を持たせる。導電性材料としては、導電性フッ素樹脂製、例えば薬液耐性が高いPTFE(Poly Tetra Fluoro Ethylene),PCTFE(Poly Chloro Tri Furuoro Ethylene),PFA(Per Fluoroalkoxy Alkane)などのフッ素樹脂にカーボンナノチューブを練り込んだものが好適である。筐体81における超音波洗浄液と接する面の、導電性材料製とした部位は、接地されている。
図16および図17においては、例として筐体81の全体が導電性材料で構成された場合に、ケーブルを介して接地されていることを模式的に示す。
Here, if the ultrasonic cleaning liquid is charged, the substrate W may be damaged during cleaning. Therefore, in the present embodiment, at least a part (preferably the entire part) of the surface (wetted part) in contact with the ultrasonic cleaning liquid in the casing 81 is made of a conductive material so as to have conductivity. As the conductive material, carbon nanotubes are kneaded into a fluororesin such as PTFE (Poly Tetra Fluoro Ethylene), PCTFE (Poly Chloro Tri Furuoro Ethylene), PFA (Per Fluoroalkoxy Alkane), etc. That is suitable. A portion made of a conductive material on the surface of the casing 81 that contacts the ultrasonic cleaning liquid is grounded.
16 and 17 schematically show that the case 81 is grounded via a cable when the entire casing 81 is made of a conductive material as an example.

 なお、導電性材料のカーボンナノチューブの含有率を抑えつつ十分な導電性を持たせるためには、カーボンナノチューブの繊維の長さを30μm以上とすることが望ましい。 In addition, in order to give sufficient conductivity while suppressing the content of the carbon nanotube of the conductive material, it is desirable that the length of the carbon nanotube fiber is 30 μm or more.

 これにより、超音波洗浄液の帯電を抑制でき、洗浄時に基板Wを破損するリスクを低減できる。また、カーボンナノチューブを含むフッ素樹脂で筐体81を形成することで、その強度も向上する。さらに、洗浄時には、接地を解除して、導電性の部分にバイアスを印加することもできる。これにより、既に帯電している基板Wの表面に対して帯電した超音波洗浄液を意図的に供給でき、基板W表面の帯電がキャンセルされる。例えば、基板Wが負に帯電する傾向にある場合、導電性の部分を接地するか正電荷を印加してもよい。 This can suppress charging of the ultrasonic cleaning liquid and reduce the risk of damaging the substrate W during cleaning. Moreover, the intensity | strength improves by forming the housing | casing 81 with the fluororesin containing a carbon nanotube. Furthermore, at the time of cleaning, the grounding can be canceled and a bias can be applied to the conductive portion. Thus, the charged ultrasonic cleaning liquid can be intentionally supplied to the surface of the substrate W that has already been charged, and the charging of the surface of the substrate W is cancelled. For example, when the substrate W tends to be negatively charged, the conductive portion may be grounded or a positive charge may be applied.

 本実施形態では、特に超音波洗浄液が噴射されるノズル部71における超音波洗浄液と接する面の少なくとも一部(望ましくは全体)は、熱伝導率が高い材料製、具体的には筐体81における導電性の部分と同等以上の熱伝導性を有する材料製とするのがよい。より具体的には、サファイアや石英を適用できる。また、カーボンナノチューブを含むPTFEは熱伝導性が高いので、筐体81およびノズル部71の両方にカーボンナノチューブを含むPTFEを適用してもよい。サファイアやPTFEは薬液耐性の点で優れており、石英は超音波振動を減衰させにくい点で優れている。 In this embodiment, in particular, at least a part (preferably the entire surface) of the nozzle portion 71 to which the ultrasonic cleaning liquid is sprayed is in contact with the ultrasonic cleaning liquid (preferably the whole) is made of a material having high thermal conductivity. It is preferable to use a material having a thermal conductivity equal to or higher than that of the conductive portion. More specifically, sapphire or quartz can be applied. In addition, since PTFE including carbon nanotubes has high thermal conductivity, PTFE including carbon nanotubes may be applied to both the casing 81 and the nozzle portion 71. Sapphire and PTFE are excellent in terms of chemical resistance, and quartz is excellent in that it is difficult to attenuate ultrasonic vibration.

 カーボンナノチューブを含まないPTFEのような熱伝導率の低い材料でノズル部71を形成すると、超音波のエネルギーがノズル部71に吸収されて熱に変わり、ノズル部71で蓄熱する場合がある。ノズル部71で蓄熱が起こると、初期に洗浄した基板と、多数の基板を洗浄した後に洗浄した基板とで超音波洗浄液の温度が変わり、処理が不安定になる可能性がある。また、高温の超音波洗浄液を用いる場合にも、超音波洗浄液の熱がノズル部71に移動してノズル部71に蓄熱すると、同様に超音波洗浄液の温度が変化し、処理が不安定になる。これに対し、ノズル部71の放熱性を高めることで、このような問題を低減できる。また、ノズル部71をカーボンナノチューブを含むPTFEで形成することで、ノズル部の強度を高め、熱による変形を防ぐことも可能になる。 When the nozzle part 71 is formed of a material having low thermal conductivity such as PTFE that does not contain carbon nanotubes, the energy of ultrasonic waves may be absorbed by the nozzle part 71 and converted into heat, and the nozzle part 71 may store heat. When heat accumulation occurs in the nozzle portion 71, the temperature of the ultrasonic cleaning liquid may change between the substrate cleaned in the initial stage and the substrate cleaned after cleaning a large number of substrates, and the processing may become unstable. Further, even when a high-temperature ultrasonic cleaning liquid is used, if the heat of the ultrasonic cleaning liquid moves to the nozzle unit 71 and accumulates in the nozzle unit 71, the temperature of the ultrasonic cleaning liquid similarly changes and the processing becomes unstable. . On the other hand, such a problem can be reduced by improving the heat dissipation of the nozzle part 71. Further, by forming the nozzle part 71 from PTFE containing carbon nanotubes, it is possible to increase the strength of the nozzle part and prevent deformation due to heat.

 これにより、基板Wに噴射される超音波洗浄液の温度を下げることができ、洗浄力の低下を抑制できる。 Thereby, the temperature of the ultrasonic cleaning liquid sprayed onto the substrate W can be lowered, and a reduction in cleaning power can be suppressed.

 図17は、図16の変形例である超音波洗浄液供給装置43’の概略構成を模式的に示す図である。この超音波洗浄液供給装置43’の筐体81は、下方が開口した空洞が内部にあり、筐体81の底面81bに開口81cが設けられている。そして、この開口81cから基板Wに向かって超音波洗浄液が噴射される。この超音波洗浄液供給装置43’の筐体81のうち、超音波洗浄液が噴射される開口81cに近い部分、より具体的には底面81bの上面および開口81cの側面の少なくとも一部(望ましくは全体)を放熱性が高い材料製とし、他の面を導電性材料製とするのがよい。その他は図16と同様である。 FIG. 17 is a diagram schematically showing a schematic configuration of an ultrasonic cleaning liquid supply device 43 ′ which is a modification of FIG. 16. The casing 81 of the ultrasonic cleaning liquid supply device 43 ′ has a cavity opened at the bottom, and an opening 81 c is provided on the bottom surface 81 b of the casing 81. Then, an ultrasonic cleaning liquid is ejected from the opening 81c toward the substrate W. Of the casing 81 of the ultrasonic cleaning liquid supply device 43 ′, a portion close to the opening 81c from which the ultrasonic cleaning liquid is ejected, more specifically, at least a part of the upper surface of the bottom surface 81b and the side surface of the opening 81c (preferably the whole ) Is made of a material with high heat dissipation, and the other surface is preferably made of a conductive material. Others are the same as FIG.

 このように、第4の実施形態では、超音波洗浄液供給装置43(43’)の筐体81の内面を導電性とする。そのため、超音波洗浄液の帯電を抑制でき、洗浄時に基板Wを破損するリスクを低減できる。また、超音波洗浄液が噴射される部分の内面の放熱性を高くする。そのため、基板Wに供給される超音波洗浄液の温度を下げることができ、洗浄力の低下を抑制できる。 Thus, in the fourth embodiment, the inner surface of the casing 81 of the ultrasonic cleaning liquid supply device 43 (43 ') is made conductive. Therefore, charging of the ultrasonic cleaning liquid can be suppressed, and the risk of damaging the substrate W during cleaning can be reduced. Moreover, the heat dissipation of the inner surface of the portion where the ultrasonic cleaning liquid is ejected is increased. Therefore, the temperature of the ultrasonic cleaning liquid supplied to the substrate W can be lowered, and a reduction in cleaning power can be suppressed.

 なお、基板洗浄装置4の態様は図14および図15に示したものに限られない。例えば、ペン型洗浄具421ではなくロール型洗浄具で洗浄するものであってもよい。また、洗浄具を用いることなく超音波洗浄液で洗浄するのみであってもよい。さらに、チャック爪411で基板Wを保持して回転させるのではなく、基板Wを下方からステージ上に支持してステージを回転させてもよいし、基板Wの外周端部をローラーで保持して回転させてもよい。 In addition, the aspect of the substrate cleaning apparatus 4 is not limited to that shown in FIGS. For example, the cleaning may be performed with a roll-type cleaning tool instead of the pen-type cleaning tool 421. Moreover, you may only wash | clean with an ultrasonic cleaning liquid, without using a cleaning tool. Further, instead of holding and rotating the substrate W with the chuck claws 411, the substrate W may be supported on the stage from below and the stage may be rotated, or the outer peripheral edge of the substrate W may be held with a roller. It may be rotated.

 また、超音波洗浄液供給装置43は、筐体81の外部に配置された振動部82によって生成された超音波洗浄液が筐体81内に導かれる構成であってもかまわない。 Further, the ultrasonic cleaning liquid supply device 43 may be configured such that the ultrasonic cleaning liquid generated by the vibration unit 82 disposed outside the casing 81 is guided into the casing 81.

 図17Aは、図17の変形例である超音波洗浄液供給装置43’’の概略構成を模式的に示す図である。この超音波洗浄液供給装置43’’は振動部を持っておらず、外部にある振動部(不図示)によって超音波が付加された洗浄液(液体)が流路81aから供給される。そして、筐体81の下方に設けられた開口81cから基板面に洗浄液が供給される。 FIG. 17A is a diagram schematically showing a schematic configuration of an ultrasonic cleaning liquid supply device 43 ″ which is a modified example of FIG. 17. The ultrasonic cleaning liquid supply device 43 ″ does not have a vibration part, and cleaning liquid (liquid) to which ultrasonic waves are added by an external vibration part (not shown) is supplied from the flow path 81 a. Then, the cleaning liquid is supplied to the substrate surface from the opening 81 c provided below the housing 81.

 このような超音波洗浄液供給装置43’’において、洗浄液と接する底面81bの上面81b1および開口81cの側面81c1の少なくとも一部は、カーボンナノチューブを含む導電性フッ素樹脂であるのが望ましい。また、他の面は導電性材料(カーボンナノチューブを含んでいてもよいし、導電性フッ素樹脂でもよい)であるのが望ましい。 In such an ultrasonic cleaning liquid supply apparatus 43 ″, it is desirable that at least a part of the upper surface 81b1 of the bottom surface 81b and the side surface 81c1 of the opening 81c that are in contact with the cleaning liquid is a conductive fluororesin including carbon nanotubes. The other surface is desirably a conductive material (which may contain carbon nanotubes or may be a conductive fluororesin).

 (第5の実施形態)
 上述した第4の実施形態における基板洗浄装置4は、回転する基板Wに対して超音波洗浄液を供給するものであった。これに対し、次に説明する第2の実施形態は、超音波洗浄液に基板Wを浸して洗浄するものである。
(Fifth embodiment)
The substrate cleaning apparatus 4 in the fourth embodiment described above supplies an ultrasonic cleaning liquid to the rotating substrate W. On the other hand, in the second embodiment described below, cleaning is performed by immersing the substrate W in an ultrasonic cleaning liquid.

 図18Aは、第5の実施形態に係る基板洗浄装置4’の概略構成を模式的に示す図である。また、図18Bは、図18Aを側面(矢印方向)から見た図である。以下、第1の実施形態との相違点を中心に説明する。 FIG. 18A is a diagram schematically showing a schematic configuration of a substrate cleaning apparatus 4 ′ according to the fifth embodiment. Moreover, FIG. 18B is the figure which looked at FIG. 18A from the side surface (arrow direction). Hereinafter, a description will be given focusing on differences from the first embodiment.

 基板洗浄装置4’は、超音波洗浄液生成装置70と、基板回転機構49とを備えている。
 超音波洗浄液生成装置70は筐体81および振動部82(図18Bでは省略)を有する。筐体81は、底面および側面を有するが上方は開放されており、底面上に振動部82が配置される。振動部82は筐体81内に供給された洗浄液に振動を与えることによって超音波洗浄液を生成する。筐体81の接液部の少なくとも一部は、第1の実施形態と同様に導電性である。また、筐体81の導電性の部分を接地させて帯電を逃がすように構成してもよい。
The substrate cleaning device 4 ′ includes an ultrasonic cleaning liquid generating device 70 and a substrate rotating mechanism 49.
The ultrasonic cleaning liquid generating apparatus 70 includes a casing 81 and a vibration unit 82 (omitted in FIG. 18B). The casing 81 has a bottom surface and side surfaces, but the upper portion is open, and the vibration unit 82 is disposed on the bottom surface. The vibration unit 82 generates ultrasonic cleaning liquid by applying vibration to the cleaning liquid supplied into the housing 81. At least a part of the liquid contact portion of the casing 81 is conductive as in the first embodiment. Alternatively, the conductive portion of the casing 81 may be grounded to release the charge.

 基板回転機構49は支持部材によって支持されており、少なくとも一部が筐体81内に収容された超音波洗浄液に浸かった状態の洗浄対象の基板Wを保持して回転させる。より具体的には、基板回転機構41は、筐体81の内部に設けられており、基板Wのエッジを支持して基板Wを周方向に駆動する。これにより、基板Wは縦方向に保持され、鉛直面内で回転する。なお、本実施形態では基板Wを縦方向に保持する例を示したが、横方向あるいは斜め方向に保持してもよい。また、本実施形態では基板を1枚保持する例を示したが、筐体81内に複数の基板を収容するようにしてもよい。 The substrate rotation mechanism 49 is supported by a support member, and holds and rotates the substrate W to be cleaned in a state where at least a part is immersed in the ultrasonic cleaning liquid accommodated in the housing 81. More specifically, the substrate rotation mechanism 41 is provided inside the housing 81 and supports the edge of the substrate W to drive the substrate W in the circumferential direction. As a result, the substrate W is held in the vertical direction and rotates in the vertical plane. In this embodiment, the example in which the substrate W is held in the vertical direction has been described. In the present embodiment, an example in which one substrate is held is shown, but a plurality of substrates may be accommodated in the housing 81.

 筐体81内への洗浄液の供給や基板Wの回転によって洗浄液が筐体81内で流動する。すると、洗浄液と筐体81の内壁との摩擦により筐体81の内壁表面が帯電することがある。しかしながら、本実施形態では、筐体81が導電性であるため電荷を逃がすことができ、結果的に、洗浄液を含む筐体81の内部の帯電を防止し、基板Wの帯電を防止することができ、基板Wの破損リスクを低減できる。また、洗浄時には、接地を解除して、導電性の部分にバイアスを印加することもできる。これにより、既に帯電している基板Wの表面に対して帯電した超音波洗浄液を意図的に接触させて、基板W表面の帯電を効果的に抑制できる。例えば、基板W表面が負に帯電する傾向にある場合、筐体の導電性の部分を接地するか正電荷を洗浄液に印加してもよい。 The cleaning liquid flows in the casing 81 by supplying the cleaning liquid into the casing 81 and rotating the substrate W. Then, the inner wall surface of the housing 81 may be charged due to friction between the cleaning liquid and the inner wall of the housing 81. However, in the present embodiment, since the casing 81 is conductive, it is possible to release electric charges. As a result, charging inside the casing 81 containing the cleaning liquid can be prevented, and charging of the substrate W can be prevented. And the risk of damage to the substrate W can be reduced. Further, at the time of cleaning, grounding can be canceled and a bias can be applied to the conductive portion. Accordingly, the charged ultrasonic cleaning liquid is intentionally brought into contact with the surface of the substrate W that has already been charged, so that charging of the surface of the substrate W can be effectively suppressed. For example, when the surface of the substrate W tends to be negatively charged, the conductive portion of the housing may be grounded or a positive charge may be applied to the cleaning liquid.

[符号の説明]
4 基板洗浄装置
41,49 基板回転機構(基板保持機構)
42 ペン洗浄機構
43,43’ 超音波洗浄液供給装置
70 超音波洗浄液生成装置
71 ノズル部
81 筐体
81a 流路
81b 底面
81c 開口
82 振動部 
[Explanation of symbols]
4 Substrate cleaning devices 41, 49 Substrate rotation mechanism (substrate holding mechanism)
42 Pen cleaning mechanism 43, 43 'Ultrasonic cleaning liquid supply apparatus 70 Ultrasonic cleaning liquid generation apparatus 71 Nozzle part 81 Housing 81a Channel 81b Bottom face 81c Opening 82 Vibration part

 上述した実施形態は、本発明が属する技術分野における通常の知識を有する者が本発明を実施できることを目的として記載されたものである。例えば、基板洗浄装置内において、基板を保持機構に保持した状態で、基板を上記実施形態で説明したノズルと同様に超音波洗浄液にて洗浄した後、連続して、基板をそのまま回転させながら、IPA液をIPAノズルから基板に噴霧させて、基板の乾燥処理を行うように構成してもよい。あるいは、上記実施形態の基板処理装置として、基板の化学的機械的研磨装置(CMP装置)を示したが、これに限られず、例えば、基板のベベル部を研磨処理するベベル研磨装置や、基板のめっき装置、などにも、上記の基板洗浄装置を採用することもできる。上記実施形態の種々の変形例は、当業者であれば当然になしうることであり、本発明の技術的思想は他の実施形態にも適用しうることである。したがって、本発明は、記載された実施形態に限定されることはなく、特許請求の範囲によって定義される技術的思想に従った最も広い範囲とすべきである。 The above-described embodiments are described for the purpose of enabling the person having ordinary knowledge in the technical field to which the present invention belongs to implement the present invention. For example, in the substrate cleaning apparatus, with the substrate held by the holding mechanism, the substrate is cleaned with the ultrasonic cleaning liquid in the same manner as the nozzle described in the above embodiment, and then the substrate is continuously rotated as it is. The substrate may be configured to be sprayed by spraying the IPA liquid from the IPA nozzle onto the substrate. Alternatively, the substrate chemical mechanical polishing apparatus (CMP apparatus) is shown as the substrate processing apparatus of the above embodiment, but is not limited thereto, for example, a bevel polishing apparatus for polishing a bevel portion of the substrate, The above-described substrate cleaning apparatus can also be employed in the plating apparatus. Various modifications of the above embodiment can be naturally made by those skilled in the art, and the technical idea of the present invention can be applied to other embodiments. Therefore, the present invention should not be limited to the described embodiments, but should be the widest scope according to the technical idea defined by the claims.

Claims (24)

 基板を保持し、回転させる基板回転機構と、
 回転される前記基板に向かって超音波洗浄液を噴射するノズルと、を備え、
 前記ノズルは、前記基板と垂直な面内で旋回可能であり、かつ、前記基板と平行な面内で旋回可能である、基板洗浄装置。
A substrate rotating mechanism for holding and rotating the substrate;
A nozzle for injecting an ultrasonic cleaning liquid toward the rotated substrate,
The substrate cleaning apparatus, wherein the nozzle can swivel in a plane perpendicular to the substrate and can swivel in a plane parallel to the substrate.
 前記ノズルは、前記基板のエッジおよび/またはベベルに超音波洗浄液を噴射する、請求項1に記載の基板洗浄装置。 2. The substrate cleaning apparatus according to claim 1, wherein the nozzle sprays an ultrasonic cleaning liquid onto an edge and / or bevel of the substrate.  前記ノズルは、上下動可能である、請求項1または2に記載の基板洗浄装置。 The substrate cleaning apparatus according to claim 1, wherein the nozzle is movable up and down.  前記ノズルは、前記基板の上面に超音波洗浄液が噴射される位置まで上昇可能であり、かつ、前記基板の下面に超音波洗浄液が噴射される位置まで下降可能である、請求項3に記載の基板洗浄装置。 4. The nozzle according to claim 3, wherein the nozzle can be raised to a position where the ultrasonic cleaning liquid is sprayed on the upper surface of the substrate, and can be lowered to a position where the ultrasonic cleaning liquid is sprayed on the lower surface of the substrate. Substrate cleaning device.  前記ノズルは、前記基板と垂直な面内で旋回可能であることによって、前記基板の内側から外周に向かって超音波洗浄液を噴射できる、請求項1乃至4のいずれかに記載の基板洗浄装置。 The substrate cleaning apparatus according to any one of claims 1 to 4, wherein the nozzle can be swung in a plane perpendicular to the substrate, whereby an ultrasonic cleaning liquid can be sprayed from the inner side toward the outer periphery of the substrate.  前記ノズルは、前記基板回転機構に超音波洗浄液を噴射する、請求項1乃至5のいずれかに記載の基板洗浄装置。 6. The substrate cleaning apparatus according to claim 1, wherein the nozzle sprays an ultrasonic cleaning liquid onto the substrate rotating mechanism.  回転しながら前記基板に接触して前記基板の表面を洗浄する洗浄具を備え、
 前記ノズルは前記洗浄具に超音波洗浄液を噴射する、請求項6に記載の基板洗浄装置。
A cleaning tool for cleaning the surface of the substrate while contacting the substrate while rotating,
The substrate cleaning apparatus according to claim 6, wherein the nozzle sprays an ultrasonic cleaning liquid onto the cleaning tool.
 前記ノズルからの超音波洗浄液の噴射方向と、前記洗浄具の長手方向とのなす角は、0度より大きく90度未満である、請求項6または7に記載の基板洗浄装置。 The substrate cleaning apparatus according to claim 6 or 7, wherein an angle formed between the jet direction of the ultrasonic cleaning liquid from the nozzle and the longitudinal direction of the cleaning tool is greater than 0 degree and less than 90 degrees.  前記ノズルは、霧状の超音波洗浄液を噴射する、請求項1乃至8のいずれかに記載の基板洗浄装置。 The substrate cleaning apparatus according to any one of claims 1 to 8, wherein the nozzle sprays an atomized ultrasonic cleaning liquid.  前記基板回転機構は、前記基板を非水平方向に保持する、請求項1乃至9のいずれかに記載の基板洗浄装置。 10. The substrate cleaning apparatus according to claim 1, wherein the substrate rotation mechanism holds the substrate in a non-horizontal direction.  前記基板回転機構は、前記基板を水平方向に保持して回転させ、
 前記ノズルは、鉛直方向に延びる第1軸に固定され、前記第1軸がその軸心を中心として回転することにより、前記ノズルは前記基板と水平な面内で旋回する、請求項1乃至10のいずれかに記載の基板洗浄装置。
The substrate rotating mechanism holds and rotates the substrate in a horizontal direction,
The nozzle is fixed to a first axis extending in a vertical direction, and the nozzle rotates in a plane parallel to the substrate by rotating the first axis about its axis. The substrate cleaning apparatus according to any one of the above.
 前記基板回転機構は、前記基板を水平方向に保持して回転させ、
 前記ノズルは、水平方向に延びる第2軸に固定され、前記第2軸がその軸心を中心として回転することにより、前記ノズルは前記基板と垂直な面内で旋回する、請求項1乃至11のいずれかに記載の基板洗浄装置。
The substrate rotating mechanism holds and rotates the substrate in a horizontal direction,
The nozzle is fixed to a second shaft extending in a horizontal direction, and the second shaft rotates about its axis, whereby the nozzle swivels in a plane perpendicular to the substrate. The substrate cleaning apparatus according to any one of the above.
 基板を基板回転機構に保持して回転させるステップと、
 超音波洗浄液源に連通したノズルを前記基板の上面よりも高い位置に上昇させるとともに、前記基板の水平方向内側に前記ノズルを移動させ、さらに、前記基板上面のエッジに対して鋭角の入射角を有する向きに前記ノズルの噴射口が向くように前記ノズルを旋回させるステップと、
 前記ノズルから前記基板の上面に向けて超音波洗浄液を噴射するステップと、
 前記ノズルを前記基板の水平方向外側へと移動させるステップと、
 前記ノズルを前記基板の下面より低い位置まで下降させるとともに、前記基板の水平方向内側に前記ノズルを移動させ、さらに、前記基板下面のエッジに対して鋭角の入射角を有する向きに前記ノズルの噴射口が向くように前記ノズルを旋回させるステップと、
 前記ノズルから前記基板の下面に向けて超音波洗浄液を噴射するステップと、
 前記ノズルを前記基板の水平方向外側へと移動させるステップと、
 前記ノズルを前記基板のベベルと略同じ高さとするとともに、前記基板のベベルに向けて前記ノズルの噴射口が向くように前記ノズルを旋回させるステップと、
 前記ノズルから前記基板のベベルに向けて超音波洗浄液を噴射するステップと、を含む基板洗浄方法を実行する為に、基板洗浄装置に指令を与えて、前記基板回転機構及び前記ノズルを移動させるための機構の動作をコンピュータに実行させるためのプログラムを記録した非一時的なコンピュータ読み取り可能な記録媒体。
Holding the substrate on the substrate rotation mechanism and rotating the substrate;
The nozzle communicating with the ultrasonic cleaning liquid source is raised to a position higher than the upper surface of the substrate, the nozzle is moved inward in the horizontal direction of the substrate, and an acute incident angle with respect to the edge of the upper surface of the substrate. Swiveling the nozzle so that the nozzle outlet faces in the direction it has;
Spraying an ultrasonic cleaning liquid from the nozzle toward the upper surface of the substrate;
Moving the nozzle outward in the horizontal direction of the substrate;
The nozzle is lowered to a position lower than the lower surface of the substrate, the nozzle is moved inward in the horizontal direction of the substrate, and the nozzle is ejected in a direction having an acute incident angle with respect to an edge of the lower surface of the substrate. Turning the nozzle so that the mouth is facing;
Spraying an ultrasonic cleaning liquid from the nozzle toward the lower surface of the substrate;
Moving the nozzle outward in the horizontal direction of the substrate;
Swiveling the nozzle so that the nozzle is directed to the bevel of the substrate and the nozzle is directed toward the bevel of the substrate,
Injecting an ultrasonic cleaning liquid from the nozzle toward the bevel of the substrate, in order to move the substrate rotating mechanism and the nozzle by giving a command to the substrate cleaning apparatus. A non-transitory computer-readable recording medium recording a program for causing a computer to execute the operation of the mechanism.
 洗浄液に超音波を与えることによって超音波洗浄液を生成する振動部と、
 生成された前記超音波洗浄液を収容する筐体と、を備え、
 前記筐体における前記超音波洗浄液と接する面の少なくとも一部は、導電性フッ素樹脂製である、超音波洗浄液供給装置。
A vibration unit that generates ultrasonic cleaning liquid by applying ultrasonic waves to the cleaning liquid;
A housing for containing the generated ultrasonic cleaning liquid,
The ultrasonic cleaning liquid supply apparatus, wherein at least a part of a surface of the housing that contacts the ultrasonic cleaning liquid is made of a conductive fluororesin.
 前記導電性フッ素樹脂は、カーボンナノチューブを含むフッ素樹脂である、請求項14に記載の超音波洗浄液供給装置。 15. The ultrasonic cleaning liquid supply device according to claim 14, wherein the conductive fluororesin is a fluororesin containing carbon nanotubes.  前記フッ素樹脂は、PTFE,PCTFEまたはPFAである、請求項15に記載の超音波洗浄液供給装置。 The ultrasonic cleaning liquid supply apparatus according to claim 15, wherein the fluororesin is PTFE, PCTFE, or PFA.  前記超音波洗浄液が噴射される部分の少なくとも一部は、前記導電性フッ素樹脂より放熱性が高い、請求項14乃至16のいずれかに記載の超音波洗浄液供給装置。 The ultrasonic cleaning liquid supply apparatus according to any one of claims 14 to 16, wherein at least a part of the portion to which the ultrasonic cleaning liquid is sprayed has higher heat dissipation than the conductive fluororesin.  前記超音波洗浄液が噴射される部分の少なくとも一部は、サファイア製、石英製またはカーボンナノチューブを含むPTFE製である、請求項14乃至17のいずれかに記載の超音波洗浄液供給装置。 The ultrasonic cleaning liquid supply device according to any one of claims 14 to 17, wherein at least a part of the portion to which the ultrasonic cleaning liquid is sprayed is made of sapphire, quartz, or PTFE including carbon nanotubes.  前記筐体の前記導電性フッ素樹脂製である部分には、バイアスが印加される、請求項14乃至18のいずれかに記載の超音波洗浄液供給装置。 The ultrasonic cleaning liquid supply device according to any one of claims 14 to 18, wherein a bias is applied to a portion of the casing made of the conductive fluororesin.  基板を回転させる基板回転機構と、
 回転される前記基板に対して前記超音波洗浄液を供給する請求項14乃至19のいずれかに記載の超音波洗浄液供給装置と、を備える基板洗浄装置。
A substrate rotation mechanism for rotating the substrate;
An ultrasonic cleaning liquid supply apparatus according to any one of claims 14 to 19, wherein the ultrasonic cleaning liquid is supplied to the rotated substrate.
 洗浄液に超音波を与えることによって超音波洗浄液を生成する振動部と、
 生成された前記超音波洗浄液を収容する筐体と、
 少なくとも一部が前記筐体内に収容された前記超音波洗浄液に浸かった状態の基板を回転させる基板回転機構と、を備え、
 前記筐体における前記超音波洗浄液と接する面の少なくとも一部は、導電性フッ素樹脂製である、基板洗浄装置。
A vibration unit that generates ultrasonic cleaning liquid by applying ultrasonic waves to the cleaning liquid;
A housing for containing the generated ultrasonic cleaning liquid;
A substrate rotating mechanism for rotating the substrate in a state where at least a part is immersed in the ultrasonic cleaning liquid housed in the housing, and
The substrate cleaning apparatus, wherein at least a part of a surface of the casing that contacts the ultrasonic cleaning liquid is made of a conductive fluororesin.
 洗浄液に超音波を与えることによって超音波洗浄液を生成する工程と、
 超音波洗浄液と接する面の少なくとも一部が導電性フッ素樹脂製とされた筐体内に収容された前記超音波洗浄液に基板を浸漬させる工程と、
 前記超音波洗浄液に浸かった状態の基板を回転させて洗浄液を流動させることで、前記基板を洗浄する工程と、を含むことを特徴とする基板洗浄方法。
Producing an ultrasonic cleaning liquid by applying ultrasonic waves to the cleaning liquid;
Immersing the substrate in the ultrasonic cleaning liquid housed in a housing in which at least a part of the surface in contact with the ultrasonic cleaning liquid is made of a conductive fluororesin; and
And a step of cleaning the substrate by rotating the substrate immersed in the ultrasonic cleaning liquid to flow the cleaning liquid.
 基板面に対して超音波が与えられた超音波洗浄液を供給するための超音波洗浄液供給装置であって、
 前記超音波洗浄液を外部から受け入れる流路と、
 下方の位置に開口が設けられた筐体と、を備え、
 前記筐体における前記超音波洗浄液と接する底面の上面および前記開口の側面の少なくとも一部は、カーボンナノチューブを含む導電性フッ素樹脂であり、
 他の面は導電性材料である、超音波洗浄液供給装置。
An ultrasonic cleaning liquid supply device for supplying an ultrasonic cleaning liquid to which ultrasonic waves are applied to a substrate surface,
A flow path for receiving the ultrasonic cleaning liquid from the outside;
A housing provided with an opening at a lower position,
At least a part of the upper surface of the bottom surface in contact with the ultrasonic cleaning liquid and the side surface of the opening in the housing is a conductive fluororesin containing carbon nanotubes,
The ultrasonic cleaning liquid supply device whose other surface is a conductive material.
基板を研磨する基板研磨装置と、
 研磨後の基板を洗浄する、請求項1乃至12及び請求項20乃至21のいずれかに記載の基板洗浄装置と、を備えた基板処理装置。
A substrate polishing apparatus for polishing a substrate;
The substrate processing apparatus provided with the substrate cleaning apparatus in any one of Claims 1 thru | or 12 and 20 thru | or 21 which cleans the board | substrate after grinding | polishing.
PCT/JP2018/041115 2018-01-31 2018-11-06 Substrate cleaning device, substrate processing device, ultrasonic cleaning fluid supply device, and recording medium Ceased WO2019150683A1 (en)

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