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WO2019146636A1 - Substrat revêtu et procédé de production de substrat revêtu - Google Patents

Substrat revêtu et procédé de production de substrat revêtu Download PDF

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Publication number
WO2019146636A1
WO2019146636A1 PCT/JP2019/002067 JP2019002067W WO2019146636A1 WO 2019146636 A1 WO2019146636 A1 WO 2019146636A1 JP 2019002067 W JP2019002067 W JP 2019002067W WO 2019146636 A1 WO2019146636 A1 WO 2019146636A1
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WO
WIPO (PCT)
Prior art keywords
conductive layer
coated substrate
substrate according
moo
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2019/002067
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English (en)
Japanese (ja)
Inventor
瀬戸　康徳
大谷　強
あかね 井上
章 藤沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Sheet Glass Co Ltd
Original Assignee
Nippon Sheet Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Sheet Glass Co Ltd filed Critical Nippon Sheet Glass Co Ltd
Publication of WO2019146636A1 publication Critical patent/WO2019146636A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

Definitions

  • the present invention relates to a coated substrate and a method of manufacturing the coated substrate.
  • the surface of a substrate such as glass and ceramic is provided with a coating that achieves the intended function for the purpose of improving the function of the substrate application.
  • a coating having conductivity is formed on the surface of the substrate.
  • Patent Document 1 proposes a substrate having a layer based on tungsten and / or molybdenum formed on the surface.
  • the substrate on which the conductive film is formed can be used for various applications. Therefore, depending on the application, the substrate is required to further improve the conductivity.
  • An object of the present invention is to provide a novel coated substrate having excellent conductivity. Another object of the present invention is to provide a method for producing such a coated substrate.
  • the first aspect of the present invention is A coated substrate comprising: a transparent substrate; and a coating disposed on at least one major surface of the transparent substrate,
  • the coating comprises a conductive layer,
  • the conductive layer contains metal molybdenum (Mo) as a main component,
  • Mo metal molybdenum
  • a method for producing a coated substrate comprising: a transparent substrate; and a coating disposed on at least one of the main surfaces of the transparent substrate,
  • the coating comprises a conductive layer
  • the conductive layer contains metal molybdenum (Mo) as a main component
  • the manufacturing method includes a conductive layer forming step of forming the conductive layer, In the conductive layer forming step, the conductive layer is formed by a chemical vapor deposition method using a deposition gas containing a molybdenum source and a reduction source, The molybdenum source is a halide of molybdenum, Provided is a method of manufacturing a coated substrate.
  • a coated substrate having excellent conductivity can be provided.
  • the coated substrate of the present embodiment includes a transparent substrate and a film disposed on at least one of the main surfaces of the transparent substrate.
  • the film in the present embodiment includes a conductive layer.
  • the film may further include other functional layers other than the conductive layer, such as an underlayer described later, or may be composed of only the conductive layer.
  • the conductive layer contains metal molybdenum (hereinafter, referred to as "metal Mo”) as a main component.
  • metal Mo metal molybdenum
  • a conductive layer contains metal Mo as a main component is that a conductive layer contains 80 mass% or more of metal Mo.
  • the conductive layer may further contain molybdenum dioxide (hereinafter referred to as "MoO 2 ").
  • MoO 2 molybdenum dioxide
  • the conductive layer preferably contains both metal Mo and MoO 2 . Although the detailed reason is unknown, the conductive layer containing both metal Mo and MoO 2 has better conductivity compared to the conductive layer containing no MoO 2 and containing metal Mo as a main component. Can.
  • the conductive layer may consist essentially only of Mo and O.
  • the conductive layer substantially consists essentially of Mo and O means that the conductive layer does not substantially contain Mo and other elements other than O, for example, the atomic concentrations of other elements other than Mo and O
  • the total is 3 at% or less, preferably 1 at% or less, more preferably 0 at%.
  • the thickness of the conductive layer is, for example, 10 to 1000 nm, preferably 50 to 600 nm, and more preferably 100 to 300 nm. In the case where the conductive layer is formed of a plurality of layers as in Structural Example 1 described later, the thickness of the conductive layer is the sum of the thicknesses of all the layers constituting the conductive layer.
  • the conductive layer contains both of metal Mo and MoO 2
  • the conductive layer can realize, for example, the configuration of any of the following configuration examples 1 to 3.
  • the conductive layer includes a first layer containing metal Mo as a main component and a second layer containing MoO 2 as a main component.
  • the first layer is disposed closer to the transparent substrate than the second layer, and is in direct contact with the second layer. In other words, the transparent substrate, the first layer, and the second layer are arranged in this order.
  • the conductive layer may be formed of only the first layer and the second layer, or may further include other conductive layers.
  • the first layer containing metal Mo as a main component means that the first layer contains 80% by mass or more of metal Mo.
  • the second layer containing MoO 2 as a main component means that the second layer contains 60 mass% or more of MoO 2 .
  • the first layer may be formed only of metal Mo.
  • the second layer may be formed only of MoO 2 .
  • the thickness of the first layer is, for example, 9 to 990 nm, preferably 50 to 595 nm, and more preferably 100 to 297 nm.
  • the thickness of the second layer is, for example, 1 to 30 nm, preferably 1 to 20 nm, and more preferably 1 to 10 nm.
  • the conductive layer of the first configuration example contains both of the metal Mo and MoO 2 , so that the conductive layer has higher conductivity than the conductive layer containing no MoO 2 and containing the metal Mo as a main component. You can have Furthermore, the conductive layer of the first configuration example also exhibits an effect that the second layer suppresses the oxidation of the first layer.
  • the conductive layer is formed of a mixture of metal Mo and MoO 2 .
  • the proportion of MoO 2 in the conductive layer is, for example, 1% or more, preferably 3% or more, and more preferably 5% or more.
  • the proportion of MoO 2 in the conductive layer is, for example, 10% or less, preferably 15% or less, and more preferably 20% or less.
  • the ratio of MoO 2 in the conductive layer means the Mo atoms constituting MoO 2 contained in the conductive layer relative to the number of Mo atoms constituting the metal Mo contained in the conductive layer
  • the ratio of the number of The number of Mo atoms constituting the metal Mo contained in the conductive layer and the number of Mo atoms constituting the MoO 2 contained in the conductive layer are XPS (X-ray photoelectron) under TEM (transmission electron microscope) observation It is measured by spectroscopy) (XPS-TEM method). Note that as an alternative to the XPS-TEM method, it is possible to use a method of comparing the diffraction peak intensity of XRD (X-ray diffraction) with a calibration curve. In this method by the XRD, about the ratio of MoO 2 , almost the same result as the measurement result obtained by the XPS-TEM method is obtained.
  • the conductive layer of the second configuration example by including both the metal Mo and MoO 2 , it is more excellent than the conductive layer containing no MoO 2 and containing the metal Mo as a main component. It can have conductivity.
  • the ratio of MoO 2 in the conductive layer has a distribution along the thickness direction of the conductive layer.
  • the proportion of MoO 2 in the conductive layer increases with distance from the transparent substrate.
  • the ratio of MoO 2 in the conductive layer means the conductive layer relative to the number of Mo atoms constituting metal Mo contained in the conductive layer at a certain position in the thickness direction of the conductive layer. It is a ratio of the number of Mo atoms constituting MoO 2 contained.
  • the measurement method of the ratio of MoO 2 can be measured by the XPS-TEM method of Configuration Example 2.
  • the proportion of MoO 2 on the surface closer to the transparent substrate of the conductive layer may be substantially 0%.
  • the substantially 0% proportion of MoO 2, ratio 3% MoO 2 or less it is preferably 1% or less, more preferably 0%.
  • the ratio of MoO 2 on the surface of the conductive layer far from the transparent substrate may be 5% or more, or 10% or more.
  • the conductive layer of the third configuration example by including both the metal Mo and MoO 2 , it is more excellent than the conductive layer which does not contain MoO 2 and contains the metal Mo as a main component. It can have conductivity.
  • the coating may further include an underlayer disposed between the transparent substrate and the conductive layer.
  • the underlayer may be provided only in one layer or in multiple layers.
  • the thickness of the underlayer is, for example, 1 to 100 nm, preferably 3 to 75 nm, and more preferably 5 to 30 nm.
  • the underlayer is a layer, and in the case where a plurality of underlayers are provided, at least one of the plurality of underlayers is a layer that suppresses the diffusion of alkali metal ions. Good. By providing the base layer that suppresses the diffusion of the alkali metal ions, the diffusion of the alkali metal ions contained in the transparent substrate to the conductive layer can be suppressed.
  • the underlayer is a layer in which only one underlayer is provided, and in the case where a plurality of underlayers are provided, at least one of the plurality of underlayers is a layer substantially consisting of amorphous SiO 2 , Good.
  • the layer consisting essentially of amorphous SiO 2 and that a layer comprising amorphous SiO 2 90 wt% or more, preferably 95 mass% or more, more preferably to a layer containing more than 98 wt%.
  • the transparent substrate for example, a glass plate, a ceramic substrate and a substrate made of an organic polymer are used.
  • substrate which consists of organic polymers the plate-shaped body and film of acrylic resin make, polycarbonate resin make, polystyrene resin make, and polyester resin make are illustrated, for example.
  • acrylic resin make, polycarbonate resin make, polystyrene resin make, and polyester resin make are illustrated, for example.
  • a glass plate is used as a transparent substrate will be described.
  • the glass plate is not particularly limited, and a mass-produced glass plate of a general composition can be used.
  • a glass plate having an alkali-free glass composition or a low alkali glass composition can be used.
  • a glass plate having a soda lime silicate composition may be used.
  • a glass plate having a soda lime silicate composition manufactured by the float method can also be used.
  • the thickness of the glass plate is not particularly limited because it may be appropriately selected depending on the application.
  • the thickness of the glass plate can be, for example, 0.5 to 20 mm, preferably 1 to 5 mm.
  • the coated substrate of the present embodiment described above can have excellent conductivity.
  • the manufacturing method of the present embodiment includes a conductive layer forming step of forming a conductive layer containing Mo metal as a main component.
  • the conductive layer is formed by a chemical vapor deposition method (CVD method) using a film forming gas containing a molybdenum source (hereinafter, described as “Mo source”) and a reducing source.
  • Mo source molybdenum source
  • the Mo raw material used in this embodiment is a halide of molybdenum.
  • the temperature of the transparent substrate is preferably in the range of 650 ° C. to 800 ° C., and more preferably in the range of 700 to 760 ° C.
  • the molar ratio of H 2 to MoCl 5 is preferably in the range of 20 to 950, and in the range of 30 to 200 It is more preferable that
  • a carrier gas may be further contained in the film-forming gas in which MoCl 5 is used as the Mo raw material and H 2 is used as the reduction raw material.
  • the carrier gas at least one gas selected from the group consisting of N 2 , Ar and He can be used.
  • the volume ratio of MoCl 5 in the film forming gas is preferably in the range of 0.05 to 10 vol%, and more preferably in the range of 1.0 to 5.0 vol%.
  • the conductive layer forming step may include a plurality of film forming steps.
  • at least one of the film forming parameter and the film forming gas composition in at least one film forming process among the plurality of film forming processes may be different from those of the other film forming processes.
  • the film-forming parameter here means at least any one of the temperature of the transparent substrate in the film-forming process, and the film-forming time.
  • the ratio of the conductive layer formed of a plurality of layers and the ratio of MoO 2 has a distribution along the thickness direction.
  • a conductive layer having a configuration can also be formed. That is, by using such a method, it is possible to form the conductive layer having the configuration as in the above-described structural examples 1 and 3.
  • a base layer forming step of forming a base layer may be further performed prior to the conductive layer forming step.
  • the specific method for forming the underlayer is not particularly limited, and for example, a known film forming method such as a CVD method can be used.
  • a film forming method such as a CVD method
  • an atmospheric pressure CVD method is used, for example, using a film forming gas containing an oxidation source of O 2 or H 2 O and SiH 4 as an Si source. Can form the underlayer.
  • the conductive layer forming step may be performed on a high temperature glass ribbon in the glass plate manufacturing step by the float method. That is, the conductive layer forming step may be performed in a float bath space having a float bath, and in this case, in the conductive layer forming step, the conductive layer is a molten metal among the surfaces of the glass ribbon on the molten metal filling the float bath. Is formed on the surface of the side not touching. Specifically, for example, a predetermined number of gas spray units are disposed in the float bath at a predetermined distance from the surface of the high temperature glass ribbon on the molten metal. The film forming gas for forming the conductive layer is continuously supplied to the surface of the glass ribbon from these gas spray parts, whereby the conductive layer is formed.
  • the plurality of film forming steps may be sequentially performed on the glass ribbon flowing on the molten metal along the flow direction of the glass ribbon.
  • a gas spray unit for performing each film forming process is disposed in the float bath at a predetermined distance from the surface of the high temperature glass ribbon on the molten metal.
  • the plurality of film forming processes can be continuously performed by arranging the gas blowing unit used in each film forming process along the flow direction of the glass ribbon in the order of the plurality of film forming processes to be performed. In this case, the film forming process performed more upstream in the flow direction of the glass ribbon is performed on the glass ribbon having a higher temperature than the film forming process performed more downstream.
  • the transparent substrate is a glass plate having a soda lime silicate composition produced by the float method, and in the case of producing a coated substrate having a configuration in which an underlayer is disposed between the glass plate and the conductive layer.
  • the formation process may be performed on a high temperature glass ribbon in a glass plate manufacturing process by a float method. That is, the base layer forming step may be performed in a float bath space having a float bath, and in this case, in the base layer forming step, the base layer is a molten metal among the surfaces of the glass ribbon on the molten metal filling the float bath. Is formed on the surface of the side not touching.
  • the base layer forming step is performed upstream of the conductive layer forming step in the flow direction of the glass ribbon.
  • a gas spray unit for spraying a film forming gas for forming the underlayer is disposed upstream of the gas spray unit for forming the conductive layer in the flow direction of the glass ribbon.
  • Ru the underlayer formed by this method is, for example, a layer substantially consisting of amorphous SiO 2 .
  • the coated substrate of this embodiment can be manufactured by the above manufacturing method.
  • the sheet resistance of the conductive layer was measured with a four-terminal resistance meter.
  • the conductivity of the conductive layer was calculated from the measured value of the sheet resistance of the conductive layer and the thickness of the conductive layer obtained above.
  • Example 1 As a transparent substrate, a glass plate having a non-alkali glass composition was prepared. A conductive layer was formed on this glass plate by atmospheric pressure CVD. The formation of the conductive layer was performed by supplying a film forming gas from a coater installed in the furnace to a glass plate transported in the furnace at 700 ° C. That is, the film formation temperature of the conductive layer was 700.degree.
  • the film forming gas used for forming the conductive layer contained MoCl 5 as a Mo source, H 2 as a reducing source, and N 2 as a carrier gas. The deposition gas contained 1.1% by volume of MoCl 5 and 38% by volume of H 2, with the remainder being the carrier gas. These film formation conditions are shown in Table 1. The thickness, the constituent components, the sheet resistance and the conductivity of the conductive layer of the obtained glass substrate with a film are also shown together in Table 1.
  • Example 2 A conductive layer was formed on the surface of the glass plate in the same manner as in Example 1 except that the concentration of each component of the film forming gas was changed as shown in Table 1. The thickness and constituent components of the conductive layer of the obtained coated glass substrate are also shown in Table 1.
  • Example 3 As shown in Table 1, using a glass plate having a soda lime silicate composition manufactured by the float method as the transparent substrate and having a thin film substantially consisting of SiO 2 on the surface, the concentration of each component of the film forming gas is shown. A conductive layer was formed on the surface of the glass plate in the same manner as in Example 1 except for the changed point. The thickness and constituent components of the conductive layer of the obtained coated glass substrate are also shown in Table 1.
  • Example 4 The same glass plate as in Example 3 is used, the concentration of each component of the film forming gas is changed as shown in Table 1, and the film forming temperature of the conductive layer is changed to 750 ° C. A conductive layer was formed on the surface of the glass plate by the method. The thickness, the constituent components, the sheet resistance and the conductivity of the conductive layer of the obtained coated glass substrate are also shown in Table 1.
  • Example 5 A conductive layer was formed on the surface of the glass plate in the same manner as in Example 4 except that the same glass plate as in Example 1 was used.
  • the thickness, the constituent components, the sheet resistance and the conductivity of the conductive layer of the obtained coated glass substrate are also shown in Table 1.
  • a glass plate having a non-alkali glass composition was prepared.
  • a conductive layer was formed on this glass plate by atmospheric pressure CVD.
  • the formation of the conductive layer was performed by supplying a film-forming gas from a coater installed in the furnace to a glass plate transported in the furnace at 620 ° C.
  • the film forming gas used for forming the conductive layer contained MoCl 5 as a Mo source, H 2 as a reducing source, and N 2 as a carrier gas.
  • the deposition gas contained 1.1% by volume of MoCl 5 and 38% by volume of H 2, with the remainder being the carrier gas.
  • a glass plate having a non-alkali glass composition was prepared.
  • a conductive layer was formed on the glass plate by sputtering.
  • the formation of the conductive layer was performed using an in-line type magnetron sputtering apparatus, introducing argon gas of 5 ⁇ 10 ⁇ 3 Torr into the chamber, and applying DC (direct current) to the metal Mo target.
  • the thickness, components, sheet resistance and conductivity of the conductive layer of the obtained coated glass substrate are shown in Table 1.
  • a coated substrate having excellent conductivity can be provided.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
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Abstract

Ce substrat revêtu est un substrat revêtu comprenant un substrat transparent et un revêtement disposé sur au moins une surface principale du substrat transparent, le revêtement comprenant une couche conductrice, et la couche conductrice comprenant du métal de molybdène (Mo) en tant que composant principal.
PCT/JP2019/002067 2018-01-23 2019-01-23 Substrat revêtu et procédé de production de substrat revêtu Ceased WO2019146636A1 (fr)

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JP2018-008633 2018-01-23
JP2018008633 2018-01-23

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WO2019146636A1 true WO2019146636A1 (fr) 2019-08-01

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS602667A (ja) * 1983-06-17 1985-01-08 Kokusai Electric Co Ltd 固体原料の昇華供給装置
JP2001172049A (ja) * 1999-06-30 2001-06-26 Saint Gobain Vitrage タングステン及び／又はモリブデンに基づく層をガラス、セラミック又はガラス−セラミック基材に堆積させる方法、及びそのようにコーティングされた基材
JP2008211191A (ja) * 2007-02-02 2008-09-11 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2011501404A (ja) * 2007-10-12 2011-01-06 サン−ゴバン グラス フランス 酸化モリブデンで作られた電極を製造する方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS602667A (ja) * 1983-06-17 1985-01-08 Kokusai Electric Co Ltd 固体原料の昇華供給装置
JP2001172049A (ja) * 1999-06-30 2001-06-26 Saint Gobain Vitrage タングステン及び／又はモリブデンに基づく層をガラス、セラミック又はガラス−セラミック基材に堆積させる方法、及びそのようにコーティングされた基材
JP2008211191A (ja) * 2007-02-02 2008-09-11 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2011501404A (ja) * 2007-10-12 2011-01-06 サン−ゴバン グラス フランス 酸化モリブデンで作られた電極を製造する方法

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