WO2019024091A1 - Laser repairing method and device - Google Patents

Abstract

A method and a laser repair device for use in removing impurities (30) from a substrate (20). The laser repair method comprises the steps of: acquiring an initial position of an impurity (30) on a substrate (20) (S1); bombarding the impurity (30) at the initial position (S2); detecting whether there is a residual impurity (32) at a peripheral position of the substrate (20) by centering on the initial position (S3), the peripheral position surrounding the initial position; and if there is a residual impurity (32) at the peripheral position, bombarding the residual impurity (32) at the peripheral position (S4).

Description

Laser repair method and laser repair equipment Technical field

The invention relates to the technical field of display screen production, in particular to a laser repairing method and a laser repairing device.

Background technique

In the manufacturing process of the flexible display screen, a metal mask is needed to cause the organic light-emitting material to be evaporated to a predetermined position, and after the metal mask is used for a plurality of times, a large impurity may be formed on the surface of the metal mask. For example, the residue of the organic luminescent material can usually be removed by laser bombardment of impurities. However, after laser bombardment, the crushed impurities may still fall at other positions of the metal mask, causing secondary pollution.

Summary of the invention

Embodiments of the present invention provide a laser repair method and a laser repair apparatus.

The laser repairing method of the embodiment of the present invention is for removing impurities on a substrate, and the laser repairing method comprises the steps of:

Obtaining an initial position of an impurity on the substrate;

Bombing impurities located at the initial position;

Detecting, at the peripheral position of the substrate, whether there is residual impurities around the initial position, the peripheral position surrounding the initial position; and

If there is residual impurities at the peripheral position, the residual impurities located at the peripheral position are bombarded.

In some embodiments, the step of detecting whether the peripheral position of the substrate has residual impurities centering on the initial position comprises the following substeps:

Collecting a first image of a first predetermined area of the substrate, the first image including a central area and a peripheral area surrounding the central area, the central area corresponding to the initial position, the peripheral area and the The peripheral position corresponds; and

The first image is processed to determine if there is residual impurities in the peripheral location.

In some embodiments, the peripheral region includes a plurality of sub-peripheral regions, each of the sub-peripheral regions having an area equal to the central region.

In some embodiments, the first image is square, the central area is square, the number of sub-peripheral areas is eight, and the central area forms eight rows and three columns with eight of the sub-peripheral regions. Matrix arrangement.

In some embodiments, the laser repair method further comprises the steps of:

If there is no residual impurity at the peripheral position, it is judged that the one impurity is repaired; and

A location of another impurity on the substrate is obtained to update the initial position.

In some embodiments, the peripheral location includes a plurality of sub-circumferential locations, and the laser repairing method further includes the steps of:

If there is no residual impurity at the peripheral position, detecting whether there is residual impurities in a peripheral position of the substrate around the sub-circumferential position centering on each of the sub-peripheral positions; and

If there is residual impurities in the peripheral position, the residual impurities located at the peripheral position are bombarded.

In some embodiments, the laser repair method further comprises the steps of:

If the peripheral location has no residual impurities, it is determined that the one impurity is repaired; and

A location of another impurity on the substrate is obtained to update the initial position.

In some embodiments, the step of detecting, at the periphery of the sub-circumferential position of the substrate, whether there is residual impurities, centering on each of the sub-circumferential positions comprises the following sub-steps:

Acquiring a second image of a second predetermined area of the substrate centered at each of the sub-circumferential positions; and

The second image is processed to determine whether the peripheral location has residual impurities.

The laser repairing apparatus of the embodiment of the present invention is for removing impurities on a substrate, and the laser repairing apparatus includes:

a processor for acquiring an initial position of an impurity on the substrate;

a laser for bombarding impurities located at the initial position; and

An image forming apparatus for detecting whether a peripheral position of the substrate has residual impurities centering on the initial position, the peripheral position surrounding the initial position;

The laser is also used to bombard residual impurities at the peripheral location if there are residual impurities at the peripheral location.

In some embodiments, the imaging device is further configured to acquire a first image of a first predetermined area of the substrate, the first image including a central region and a peripheral region surrounding the central region, the central region Corresponding to the initial position, the peripheral region corresponds to the peripheral position; and

The first image is processed to determine if there is residual impurities in the peripheral location.

In some embodiments, the peripheral region includes a plurality of sub-peripheral regions, each of the sub-peripheral regions having an area equal to the central region.

In some embodiments, the first image is square, the central area is square, the number of sub-peripheral areas is eight, and the central area forms eight rows and three columns with eight of the sub-peripheral regions. Matrix arrangement.

In some embodiments, the processor is further configured to:

If there is no residual impurity at the peripheral position, it is judged that the one impurity is repaired; and

A location of another impurity on the substrate is obtained to update the initial position.

In some embodiments, the peripheral location includes a plurality of sub-circumferential locations, and the imaging device is further configured to If there is no residual impurity at the peripheral position, detecting whether there is residual impurities in a peripheral position of the substrate around the sub-circumferential position centering on each of the sub-circumferential positions; and

The laser is also used to bombard residual impurities located at the peripheral location if there are residual impurities at the peripheral location.

In some embodiments, the processor is further configured to:

If the peripheral location has no residual impurities, it is determined that the one impurity is repaired; and

A location of another impurity on the substrate is obtained to update the initial position.

In some embodiments, the imaging device is further configured to acquire a second image of a second predetermined area of the substrate centered at each of the sub-circumferential positions;

The second image is processed to determine whether the peripheral location has residual impurities.

The laser repairing method and the laser repairing device according to the embodiment of the present invention remove residual impurities by detecting whether there are residual impurities at the peripheral position and bombarding residual impurities after bombarding the impurities, thereby preventing residual impurities from remaining on the substrate and avoiding residual impurities of the substrate. Pollution.

The additional aspects and advantages of the embodiments of the present invention will be set forth in part in the description which follows.

DRAWINGS

The above and/or additional aspects and advantages of the present invention will become apparent and readily understood from

1 is a schematic flow chart of a laser repairing method according to an embodiment of the present invention;

2 is a schematic structural view of a laser repairing apparatus according to an embodiment of the present invention;

3 is a schematic view showing the distribution of impurities and residual impurities in an embodiment of the present invention;

4 is a schematic flow chart of a laser repairing method according to an embodiment of the present invention;

FIG. 5 is a schematic flow chart of a laser repairing method according to an embodiment of the present invention; FIG.

6 is a schematic view showing the distribution of impurities and residual impurities in an embodiment of the present invention;

7 is a schematic flow chart of a laser repairing method according to an embodiment of the present invention;

8 is a schematic flow chart of a laser repairing method according to an embodiment of the present invention;

9 is a schematic diagram of a first image and a second image according to an embodiment of the present invention;

FIG. 10 is a schematic view showing a detection range of an image forming apparatus according to an embodiment of the present invention; FIG.

11 is a flow chart showing a laser repairing method according to an embodiment of the present invention.

The main component symbol drawing description:

The laser repairing apparatus 10, the processor 12, the laser 14, the imaging device 16, the substrate 20, the impurities 30, the residual impurities 32, the first image 40, the central region 42, the peripheral region 44, the sub-periphery region 442, and the second image 60.

Detailed ways

Embodiments of the present invention will be further described below in conjunction with the accompanying drawings. The same or similar reference numerals in the drawings denote the same or similar elements or elements having the same or similar functions.

In addition, the embodiments of the present invention described below in conjunction with the accompanying drawings are merely illustrative of the embodiments of the invention, and are not to be construed as limiting.

In the present invention, the first feature "on" or "under" the second feature may be a direct contact of the first and second features, or the first and second features may be indirectly through an intermediate medium, unless otherwise explicitly stated and defined. contact. Moreover, the first feature "above", "above" and "above" the second feature may be that the first feature is directly above or above the second feature, or merely that the first feature level is higher than the second feature. The first feature "below", "below" and "below" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely that the first feature level is less than the second feature.

Referring to FIG. 1 to FIG. 3, a laser repairing method according to an embodiment of the present invention is used to remove impurities 30 on a substrate 20. The laser repairing method includes the following steps:

S1: acquiring an initial position of an impurity 30 on the substrate 20;

S2: bombarding the impurity 30 located at the initial position;

S3: detecting whether the peripheral edge of the substrate 20 has residual impurities 32 centered on the initial position, and the peripheral position surrounds the initial position;

S4: If residual impurities 32 are present at the peripheral edge, the residual impurities 32 located at the peripheral position are bombarded.

The laser repairing apparatus 10 of the embodiment of the present invention is for removing impurities 30 on the substrate 20, and the laser repairing apparatus 10 includes a processor 12, a laser 14, and an imaging device 16. The processor 12 can be used to implement step S1, the laser 14 can be used to implement steps S2 and S4, and the imaging device 16 can be used to implement step S3. That is, the processor 12 can be used to acquire an initial position of an impurity 30 on the substrate 20; the laser 14 can be used to bombard the impurity 30 located at the initial position; and the imaging device 16 can be used to detect whether the peripheral position of the substrate 20 is centered on the initial position There are residual impurities 32; the laser 14 can also be used to bombard residual impurities 32 at the peripheral position if there are residual impurities 32 at the peripheral position.

The laser repairing method and the laser repairing apparatus 10 according to the embodiment of the present invention prevent residual impurities 32 from remaining on the substrate 20 by detecting whether there is residual impurities 32 at the peripheral position and bombarding the residual impurities 32 after bombarding the impurities 30, thereby preventing the residual impurities 32 from remaining on the substrate 20. The substrate 20 is prevented from being secondarily contaminated by the residual impurities 32.

When producing an OLED (Organic Light-Emitting Diode) display, the organic luminescent material can be passed through The over-evaporation method is formed on a LTPS (Low Temperature Poly-silicon) back sheet. In the evaporation process, a metal mask having a through hole is required. After the organic light emitting material is evaporated or sublimated in a vacuum environment, the organic light emitting material can pass through a through hole in the metal mask and be plated on the LTPS back plate. It is understood that the distribution of the organic luminescent material evaporated on the LTPS backsheet also changes as the shape of the via changes. However, during the manufacture and use of the metal mask, the surface of the metal mask is liable to form impurities 30, such as an organic light-emitting material deposited on the surface of the metal mask, a metal mask material dissolved when the metal mask is soldered, and the like. Moreover, since the size of the through hole is small, the lateral dimension is usually several tens of micrometers, and the through hole is easily blocked by the impurity 30, so that the organic light emitting material cannot pass through the blocked through hole during the evaporation process, thereby reducing the production of the OLED display. Yield. Therefore, it is necessary to periodically clean and repair the metal mask to prevent the impurities 30 from staying on the metal mask.

The substrate 20 of the embodiment of the present invention may be a metal mask as described above. Of course, the specific form of the substrate 20 is not limited to a metal mask, which is not limited herein.

Specifically, before the substrate 20 is placed in the laser repairing apparatus 10 for repair, the substrate 20 may be first tested on an external detecting device to determine the initial position of all the impurities 30 on the substrate 20, and the external detecting device may be an automatic optical detecting device. The processor 12 can communicate with an external detection device via Bluetooth, wifi or by wire connection, and the processor 12 acquires the initial position of the impurity 30 detected by the external detection device. Specifically, the processor 12 may acquire the initial positions of all the impurities 30 at the same time, or may acquire the initial position of the impurity 30 first, and after the one impurity 30 is repaired, acquire the initial position of the other impurity 30.

After the processor 12 acquires the initial position of the impurity 30, the laser 14 emits laser light and focuses the laser light on the impurity 30 through the lens. The temperature of the impurity 30 rapidly rises under the irradiation of the laser, and strong physical or chemical changes occur, and impurities 30 was crushed. Referring to FIG. 3, it can be understood that the debris (residual impurities 32) after the impurities 30 are crushed will splash around, and since the pores of the through holes are small, the impurities 30 may be crushed for the first time, and the residual impurities 32 may be The hole will still be blocked. Therefore, it is necessary to detect whether or not residual impurities 32 are present within a certain range.

The imaging device 16 detects whether or not there is residual impurities 32 at the peripheral position of the substrate 20 centering on the initial position. Specifically, since the residual impurities 32 may splash in any direction centered on the initial position, the range in which the residual impurities 32 are detected may be concentrated at the peripheral position centered on the initial position to avoid missing residual impurities in a certain direction. 32. The range of the peripheral position may be a predetermined range of the user. For example, the user may judge the distance that the residual impurity 32 may splash according to the material of the impurity 30. The larger the distance of the splash may be, the larger the range of the peripheral position may be; or the OLED display may be produced according to the production. The accuracy requirement judgment, the higher the precision requirement, the larger the range of the peripheral position; or the larger the range that the imaging device 16 can effectively detect at one time, the larger the range that can be effectively detected by the imaging device 16 at one time. The range of the peripheral position can be larger.

When it is detected that there is residual impurities 32 at the peripheral position, laser light is emitted by the laser 14 to bombard the residual impurities 32. After the residual impurities 32 are bombarded, they may be dispersed again to other positions in the form of debris, and the size of the chips at this time is already small, which does not cause too much influence on the normal use of the substrate 20, and the image forming apparatus 16 can no longer be used. The debris generated after the residual impurities 32 are bombarded is traced. Further, the laser repairing apparatus 10 further includes an airflow generating device (not shown). During the repair of the substrate 20, the airflow generating device generates a flow of air flowing through the surface of the substrate 20, and when the size or weight of the debris is small enough, the broken The chips can be carried away by the air stream and detached from the substrate 20 without the need to detect and bombard the debris again.

Referring to FIG. 2 and FIG. 4, in some embodiments, the laser repair method further includes the steps of:

S5: if there is no residual impurity 32 at the peripheral position, it is judged that an impurity 30 is repaired; and

S6: The position of another impurity 30 on the substrate 20 is acquired to update the initial position.

In some embodiments, processor 12 can be used to implement steps S5 and S6. That is, the processor 12 can be used to determine that one impurity 30 is repaired if there is no residual impurity 32 at the peripheral position; and to acquire the position of the other impurity 30 on the substrate 20 to update the initial position.

Specifically, when the user judges that the residual impurity 32 may splash beyond the predetermined range of the peripheral position after the bombardment of the impurity 30, that is, when the user judges that the residual impurities 32 are all located in the peripheral position, only the residual of the peripheral position needs to be repaired. The impurities 32 ensure that the substrate 20 is not contaminated by the residual impurities 32, simplifying the repair process.

Referring to FIG. 2, FIG. 3 and FIG. 5, in some embodiments, step S3 includes the following sub-steps:

S31: acquiring a first image 40 of a first predetermined area of the substrate 20, the first image 40 includes a central area 42 and a peripheral area 44 surrounding the central area 42, the central area 42 corresponding to the initial position, and the peripheral area 44 corresponding to the peripheral position; with

S32: The first image 40 is processed to determine whether there is residual impurities 32 in the peripheral position.

In some embodiments, imaging device 16 can be used to implement steps S31 and S32. That is, the imaging device 16 can be used to acquire the first image 40 of the first predetermined area of the substrate 20; and process the first image 40 to determine whether there are residual impurities 32 in the peripheral position.

The first predetermined area is greater than or equal to the area of the peripheral position, and the range of the peripheral position is included in the range of the first image 40 to ensure that the peripheral position is determined to have residual impurities 32 by processing the first image 40. The imaging device 16 may specifically be a visible light camera, an infrared camera, an ultrasonic imaging device, or the like. The imaging device 16 includes an image processing unit. The imaging device 16 may specifically acquire feature points of the first image 40 by the image processing unit and match the residual impurities 32 to determine whether there are residual impurities 32 at the peripheral position, for example, because the residual impurities 32 are After the laser bombardment occurs, the outer surface of the residual impurity 32 may appear as a focal black, and it is judged whether or not the residual impurity 32 is by judging the position at which the black pixel is present.

In particular, referring again to FIG. 3, in some embodiments, the perimeter region 44 includes a plurality of sub-peripheral regions 442, each of which is equal in area to the central region 42.

The peripheral region 44 is divided into a plurality of sub-peripheral regions 442 (such as numbers 2-9 in FIG. 3) to facilitate the user to locate and record the position of the residual impurities 32 during use. For example, the residual impurities 32 in FIG. 3 can be positioned as The sub-periphery region 442 of 4, 5 and 7 has an area of the central region 42 (such as number 1 in FIG. 3) equal to the area of the sub-peripheral region 442, facilitating the center of view of the imaging device 16 during subsequent detection. That is, the central region 42 is aligned with a sub-peripheral region 442.

The first image 40 may be square, the central area 42 may be square, and the number of sub-peripheral areas 442 may be eight. The central area 42 and the eight sub-peripheral areas 442 form a matrix of three rows and three columns, that is, The arrangement of the nine squares as shown in Figure 3.

The distance from each sub-peripheral region 442 to the central region 42 is substantially equal, and a plurality of sub-peripheral regions 442 surround the central region 42, which may better characterize the initial location and the peripheral location. The imaging field of view of the imaging device 16 may also be a central region 42 and a sub-periphery region 442 that are square and are divided into the above-described nine-square lattice arrangement.

Of course, the shape of the first image 40, the central area 42 and the peripheral area 44 is not limited to the above discussion, and may be adjusted according to actual conditions, which is not limited herein. For example, as shown in FIG. 6, the first image 40 is circular, the central region 42 is circularly concentric with the first image 40, the peripheral region 44 is in the shape of a circle concentric with the central region 42, and the plurality of sub-peripheral regions 442 are equally divided. The sector shape of the area 44.

Referring to FIG. 2 and FIG. 7, in some embodiments, the peripheral position includes a plurality of sub-circumferential positions, and the laser repairing method further comprises the steps of:

S7: if there is no residual impurity 32 at the peripheral position, detecting whether there is residual impurity 32 at the peripheral position of the circumferential position of the substrate 20 around the position of each sub-circumference; and

S8: If there are residual impurities 32 at the peripheral position, the residual impurities 32 located at the peripheral position are bombarded.

In some embodiments, imaging device 16 and laser 14 can also be used to implement steps S7 and S8, respectively. That is, the image forming apparatus 16 can be used to detect whether or not there is residual impurities 32 in the peripheral position of the circumferential position of the substrate 20 around the position of each sub-circumference if there is no residual impurity 32 at the peripheral position. The laser 14 can be used to bombard residual impurities 32 at peripheral locations if there are residual impurities 32 at the peripheral locations.

When the user judges that the bombarding impurity 30, the distance at which the residual impurity 32 splashes may be large, causing the imaging device 16 not to effectively detect all the residual impurities 32 at one time, the imaging device 16 is required to perform multiple detections to make the total range of the detection coverage. All areas of the substrate 20 where secondary contamination may be present. The total range of peripheral positions of all sub-circumferential positions is greater than the peripheral position, that is, the imaging device 16 performs multiple detections to expand the total range of detection. When the laser 14 detects the residual impurities 32, the residual impurities 32 are bombarded to avoid secondary contamination of the peripheral locations.

When the total range of the peripheral positions is sufficient to include an area where secondary pollution may exist, the imaging device 16 does not need to detect the area other than the peripheral position; and when the total range of the peripheral positions is insufficient to contain the possibility that there may be a second time In the case of a contaminated area, the imaging device 16 can also detect the substrate 20 centered around the peripheral position to further expand the detection range until the total detection range of the imaging device 16 is sufficient to encompass all areas where secondary contamination may be present.

Specifically, referring to FIG. 2 and FIG. 8, in some embodiments, step S7 includes the following sub-steps:

S71: acquiring a second image 60 of a second predetermined area of the substrate 20 centering on each sub-circumferential position; and

S72: The second image 60 is processed to determine whether there is residual impurities 32 in the peripheral position.

In some embodiments, imaging device 1 can be used to implement steps S71 and S72. That is, the imaging device 16 can be used to acquire the second image 60 of the second predetermined area of the substrate 20 centered on each sub-circumferential position; and process the second image 60 to determine whether there is residual impurities 32 in the peripheral position.

Wherein, the second predetermined area may be equal to the first predetermined area, so that the distance between the imaging device 16 and the substrate 20 need not be adjusted, and the parameters such as the focal length of the imaging device 16 need not be adjusted, and the imaging device 16 is directly translated to make the center of the field of view It can be aligned with the position of the sub-circumference. Of course, the second predetermined area may also be unequal to the first predetermined area.

In one example, referring to FIG. 9, when there is no residual impurity 32 at the peripheral position corresponding to the area of the detection number 2-9, the substrate 20 may be collected centering on the sub-circumference position corresponding to the area of the number 2-9. A second image 60 of the surrounding location. When it is detected that there are residual impurities 32 in the peripheral position (such as the regions numbered E and F in FIG. 9), the laser 14 bombards the residual impurities 32. When the residual impurities 32 at all peripheral positions are bombarded, it can be confirmed that the position of the substrate 20 corresponding to the region shown in FIG. 10 has no residual impurities 32.

Referring to FIG. 2 and FIG. 11 , in some embodiments, the laser repair method further includes the steps of:

S9: if there is no residual impurity 32 in the peripheral position, it is judged that an impurity 30 is repaired; and

S10: Acquire a position of another impurity 30 on the substrate 20 to update the initial position.

In some embodiments, processor 12 can also be used to implement steps S9 and S10. That is, the processor 12 can also be used to determine that an impurity 30 is repaired if there is no residual impurity 32 at the peripheral position; and to acquire the position of the other impurity 30 on the substrate 20 to update the initial position.

That is, when the total range covered by the peripheral position already contains all the areas where secondary pollution may exist, and when there is no residual impurity 32 at the peripheral position, the processor 12 judges that the substrate 20 has no residual impurities 32, and the laser repairing apparatus 10 can be re-established. Start repairing the next impurity 30. By analogy, all impurities 30 are repaired.

In the description of the present specification, the description with reference to the terms "some embodiments", "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. Particular features, structures, materials or features described in the examples or examples are included in at least one embodiment or example of the invention. In the present specification, the schematic representation of the above terms is not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. In addition, they are not contradictory The various embodiments or examples described in the specification, as well as the features of the various embodiments or examples, may be combined and combined.

Moreover, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining "first" or "second" may include at least one of the features, either explicitly or implicitly. In the description of the present invention, "a plurality" means at least two, for example two, three, unless specifically defined otherwise.

Although the embodiments of the present invention have been shown and described, it is understood that the above-described embodiments are illustrative and are not to be construed as limiting the scope of the invention. The scope of the invention is defined by the claims and their equivalents.

Claims (16)

A laser repairing method for removing impurities on a substrate, characterized in that the laser repairing method comprises the steps of: Obtaining an initial position of an impurity on the substrate; Bombing impurities located at the initial position; Detecting, at the peripheral position of the substrate, whether there is residual impurities around the initial position, the peripheral position surrounding the initial position; and If there is residual impurities at the peripheral position, the residual impurities located at the peripheral position are bombarded. The laser repairing method according to claim 1, wherein the step of detecting whether there is residual impurities at a peripheral position of the substrate centering on the initial position comprises the following substeps: Collecting a first image of a first predetermined area of the substrate, the first image including a central area and a peripheral area surrounding the central area, the central area corresponding to the initial position, the peripheral area and the The peripheral position corresponds; and The first image is processed to determine if there is residual impurities in the peripheral location. The laser repairing method according to claim 2, wherein the peripheral area comprises a plurality of sub-peripheral areas, each of the sub-peripheral areas being equal in area to the central area. The laser repairing method according to claim 3, wherein the first image is square, the central area is square, the number of the sub-peripheral areas is eight, and the central area is eight The sub-peripheral regions form a matrix arrangement of three rows and three columns. The laser repairing method according to claim 1, wherein the laser repairing method further comprises the steps of: If there is no residual impurity at the peripheral position, it is judged that the one impurity is repaired; and A location of another impurity on the substrate is obtained to update the initial position. The laser repairing method according to claim 1, wherein the peripheral position comprises a plurality of sub-peripheral positions, and the laser repairing method further comprises the steps of: If there is no residual impurity at the peripheral position, detecting whether there is residual impurities in a peripheral position of the substrate around the sub-circumferential position centering on each of the sub-peripheral positions; and If there is residual impurities in the peripheral position, the residual impurities located at the peripheral position are bombarded. The laser repairing method according to claim 6, wherein the laser repairing method further comprises the steps of: If the peripheral location has no residual impurities, it is determined that the one impurity is repaired; and A location of another impurity on the substrate is obtained to update the initial position. The laser repairing method according to claim 6, wherein the step of detecting whether there is residual impurities in a peripheral position of the substrate around the sub-circumferential position centering on each of the sub-circumferential positions includes the following step: Acquiring a second image of a second predetermined area of the substrate centered at each of the sub-circumferential positions; and The second image is processed to determine whether the peripheral location has residual impurities. A laser repairing apparatus for removing impurities on a substrate, characterized in that the laser repairing apparatus comprises: a processor for acquiring an initial position of an impurity on the substrate; a laser for bombarding impurities located at the initial position; and An image forming apparatus for detecting whether a peripheral position of the substrate has residual impurities centering on the initial position, the peripheral position surrounding the initial position; The laser is also used to bombard residual impurities at the peripheral location if there are residual impurities at the peripheral location. The laser repairing apparatus according to claim 9, wherein said image forming apparatus is further configured to acquire a first image of a first predetermined area of said substrate, said first image comprising a central area and surrounding said central area a peripheral area corresponding to the initial position, the peripheral area corresponding to the peripheral position; and The first image is processed to determine if there is residual impurities in the peripheral location. The laser repairing apparatus according to claim 10, wherein said peripheral area comprises a plurality of sub-peripheral areas, each of said sub-peripheral areas having an area equal to said central area. The laser repairing apparatus according to claim 11, wherein said first image is square. The central area is square, and the number of the sub-peripheral areas is eight, and the central area and the eight sub-peripheral areas form a matrix arrangement of three rows and three columns. The laser repairing apparatus according to claim 9, wherein the processor is further configured to: If there is no residual impurity at the peripheral position, it is judged that the one impurity is repaired; and A location of another impurity on the substrate is obtained to update the initial position. The laser repairing apparatus according to claim 9, wherein said peripheral position comprises a plurality of sub-circumferential positions, and said image forming means is further configured to: if said peripheral position has no residual impurities, each of said sub-circumferential positions Detecting whether there is residual impurities in a peripheral position of the substrate around the sub-circumferential position for the center; and The laser is also used to bombard residual impurities located at the peripheral location if there are residual impurities at the peripheral location. The laser repairing apparatus according to claim 14, wherein the processor is further configured to: If the peripheral location has no residual impurities, it is determined that the one impurity is repaired; and A location of another impurity on the substrate is obtained to update the initial position. The laser repairing apparatus according to claim 14, wherein said image forming apparatus is further configured to acquire a second image of a second predetermined area of said substrate centering on each of said sub-circumferential positions; The second image is processed to determine whether the peripheral location has residual impurities.

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