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WO2019009001A1 - Procédé de fabrication de dispositif - Google Patents

Procédé de fabrication de dispositif Download PDF

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Publication number
WO2019009001A1
WO2019009001A1 PCT/JP2018/021631 JP2018021631W WO2019009001A1 WO 2019009001 A1 WO2019009001 A1 WO 2019009001A1 JP 2018021631 W JP2018021631 W JP 2018021631W WO 2019009001 A1 WO2019009001 A1 WO 2019009001A1
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WIPO (PCT)
Prior art keywords
group
composition
compound
mass
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/JP2018/021631
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English (en)
Japanese (ja)
Inventor
児玉　知啓
昂広 大河原
高桑　英希
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Fujifilm Corp
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Fujifilm Corp
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Priority to KR1020197033279A priority Critical patent/KR102323060B1/ko
Priority to JP2019527591A priority patent/JP6966546B2/ja
Publication of WO2019009001A1 publication Critical patent/WO2019009001A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors

Definitions

  • the present invention relates to a method of manufacturing a device provided with a light receiving element and an optical filter.
  • Solid-state imaging devices such as CCDs (charge coupled devices) and CMOSs (complementary metal oxide semiconductors) are used in video cameras, digital still cameras, mobile phones with camera functions, and the like.
  • CCDs charge coupled devices
  • CMOSs complementary metal oxide semiconductors
  • a resist pattern is formed on a support, and ion implantation is performed on the support using the resist pattern as a mask to manufacture a light receiving element.
  • an optical filter such as a color filter or an infrared transmission filter is used.
  • These optical filters are formed using various compositions for forming optical filters.
  • Patent Document 1 describes an invention relating to a colored photosensitive resin composition for producing a color filter of a solid-state imaging device using an ultrashort wavelength exposure device of 300 nm or less.
  • an object of the present invention is to provide a method of manufacturing a device capable of detecting light with reduced noise while enhancing sensitivity to light of interest.
  • the present invention provides the following. ⁇ 1> Using a resist composition, form a resist film pattern with a thickness of 5 ⁇ m or more on a support, and then perform ion implantation on the support using the resist film pattern as a mask to produce a light receiving element The process to Forming a layer of a composition for forming a pixel of an optical filter on at least a part of a region of the light receiving element where ion implantation has been performed; Irradiating a layer of the composition for forming a pixel with a light having a wavelength of 300 nm or less to expose the layer in a pattern; Developing the layer of the composition for forming a pixel after exposure to form a pixel; A method of manufacturing a device, including: The manufacturing method of the device as described in ⁇ 1> which irradiates a KrF line
  • composition for forming a pixel is at least one selected from a composition for forming a colored pixel and a composition for forming a pixel of an infrared transmitting layer.
  • the composition for forming a pixel includes a polymerizable compound and a photopolymerization initiator, and the photopolymerization initiator is selected from an alkylphenone compound, an acylphosphine compound, a benzophenone compound, a thioxanthone compound, a triazine compound and an oxime compound.
  • the method for producing a device according to any one of ⁇ 1> to ⁇ 3> which comprises at least one compound.
  • ⁇ 5> The method according to any one of ⁇ 1> to ⁇ 4>, wherein the composition for forming a pixel includes a colorant.
  • the manufacturing method of the device as described in ⁇ 5> which contains 40 mass% or more of coloring materials with respect to the total solid of the composition for ⁇ 6> pixel formation.
  • the manufacturing method of the device as described in any one of ⁇ 1>- ⁇ 6> whose size of a ⁇ 7> pixel is 2.0 micrometers or less.
  • ⁇ 9> The method of manufacturing a device according to any one of ⁇ 1> to ⁇ 8>, wherein a solid content concentration of the resist composition is 25% by mass or more.
  • ⁇ 10> The method of producing a device according to any one of ⁇ 1> to ⁇ 9>, wherein the viscosity of the resist composition at 25 ° C. is 30 to 1000 mPa ⁇ s.
  • ⁇ 11> The resist composition according to any one of ⁇ 1> to ⁇ 10>, wherein the resist composition contains a resin, and the content of the resin in the solid content of the resist composition is 95.0 to 99.9% by mass.
  • Device manufacturing method The manufacturing method of the device as described in ⁇ 11> whose Onishi parameter of ⁇ 12> resin is 3.0 or less.
  • ⁇ 14> The method for producing a device according to any one of ⁇ 1> to ⁇ 13>, wherein the resist composition is a positive photosensitive composition.
  • the resist composition further comprises a photoacid generator, and the resin is a resin having a repeating unit having a group which is decomposed by the action of an acid to generate a polar group, any one of ⁇ 11> to ⁇ 14> Method of manufacturing the device according to
  • the present invention it is possible to provide a method of manufacturing a device capable of detecting light with reduced noise while enhancing sensitivity to the target light.
  • FIG. 1 shows an embodiment of the device of the invention.
  • the notation not describing substitution and non-substitution includes a group (atomic group) having a substituent as well as a group (atomic group) having no substituent.
  • the "alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
  • exposure includes not only exposure using light but also drawing using particle beams such as electron beams and ion beams, unless otherwise specified.
  • active ray or radiation such as a bright line spectrum of a mercury lamp, far ultraviolet rays represented by an excimer laser, extreme ultraviolet rays (EUV light), X-rays, electron beams and the like can be mentioned.
  • a (meth) allyl group represents both or either of allyl and methallyl
  • “(meth) acrylate” represents both or either of acrylate and methacrylate
  • “(meth) "Acryl” represents both or either of acrylic and methacrylic
  • “(meth) acryloyl” represents both or either of acryloyl and methacryloyl.
  • the weight average molecular weight and the number average molecular weight are polystyrene equivalent values measured by GPC (gel permeation chromatography) method.
  • GPC uses HLC-8120 (manufactured by Tosoh Corp.), TSK gel Multipore HXL-M (manufactured by Tosoh Corp., 7.8 mm ID (inner diameter) ⁇ 30.0 cm) as a column, and THF (tetrahydrofuran) as an eluent. It can conform to the method of using.
  • infrared light refers to light having a wavelength of 700 to 2500 nm.
  • total solids refers to the total mass of all components of the composition excluding the solvent.
  • the term "process" is included in the term if the intended function of the process is achieved, even if it can not be clearly distinguished from other processes, not only the independent process. .
  • a resist composition is used to form a resist film pattern of 5 ⁇ m or more in thickness on a support, and then ion implantation is performed on the support using the resist film pattern as a mask Manufacturing a light receiving element; Forming a layer of a composition for forming a pixel of an optical filter on at least a part of a region of the light receiving element where ion implantation has been performed; Irradiating a layer of the composition for forming a pixel with a light having a wavelength of 300 nm or less to expose the layer in a pattern; Developing the layer of the composition for forming a pixel after exposure to form a pixel; It is characterized by including.
  • a pattern of a resist film having a thickness of 5 ⁇ m or more is formed on a support, and ions are implanted into the support.
  • the resist film effectively shields the ions implanted at the time of ion implantation, and effectively suppresses the ion implantation to the portion where the ion implantation is unnecessary. It is considered possible. For this reason, it is considered that ions can be more selectively implanted into the portion exposed from the resist film of the support, and as a result, the sensitivity to noise is lowered while the sensitivity to the target light such as visible light and infrared light is increased.
  • a layer of the composition for forming a pixel of the optical filter is formed on at least a part of the area where ion implantation of the light receiving element is performed.
  • the layer of the composition for forming a pixel is irradiated with light having a wavelength of 300 nm or less to expose it in a pattern, and then the layer of the composition for forming a pixel after exposure is developed to form a pixel.
  • the layer of the composition for forming a pixel tends to have high absorptivity for light with a wavelength of 300 nm or less, and when the layer of the composition for forming a pixel is irradiated with light with a wavelength of 300 nm or less, the pixel is formed It is presumed that the surface layer of the composition layer tends to be cured more easily than the inside.
  • the surface layer of the layer for a pixel formation composition is rapidly cured by irradiating the layer of the composition for a pixel formation with light having a wavelength of 300 nm or less for exposure, and the surface layer is rapidly cured. It is inferred that the scattering and the bounce of the exposure light are suppressed, and as a result, it is possible to form a pixel having a fine pattern size with good rectangularity. Since the rectangularity of the obtained pixel can be enhanced by forming the pixel as described above, stray light due to irregular reflection of the received light in the device can be suppressed, and the sensitivity to the target light can be enhanced. It is considered that the sensitivity to noise can be reduced. For the above reasons, according to the present invention, a device capable of detecting light with reduced noise can be manufactured.
  • the present invention it is also possible to form a pixel excellent in chemical resistance and scratch resistance.
  • the reason why such an effect can be obtained is that the layer of the composition for forming a pixel is irradiated with light having a wavelength of 300 nm or less to expose the layer of the composition for forming a pixel more effectively. It is speculated to be able to Further, according to the present invention, it is also possible to suppress the generation of residue at the time of formation of a pixel. As described above, since the surface layer of the layer of the composition for forming a pixel can be rapidly cured at the time of exposure, it is presumed that scattering and rebounding of exposure light can be suppressed.
  • Step of manufacturing light receiving element [Patterning of resist film]
  • a resist film pattern (hereinafter also referred to as a resist pattern) 2 having a thickness of 5 ⁇ m or more is formed on the support 1 using a resist composition (FIG. 1).
  • a resist composition it is preferable to apply a resist composition on the support 1 to form a resist film, and to perform pattern formation on the resist film to form a resist pattern 2.
  • a kind of support body there is no limitation in particular as a kind of support body.
  • a known semiconductor substrate such as a silicon substrate or a ZnO substrate can be used.
  • an InGaAs substrate as a support. Since the InGaAs substrate has good sensitivity to light over a wavelength of 1000 nm, a light receiving element excellent in sensitivity to light over a wavelength of 1000 nm can be manufactured by using the InGaAs substrate.
  • These substrates may be doped with impurities such as boron, aluminum, phosphorus and arsenic.
  • the thickness of the resist pattern 2 is 5 ⁇ m or more, preferably 6 ⁇ m or more, more preferably 7 ⁇ m or more, and still more preferably 8 ⁇ m or more.
  • the upper limit is not particularly limited, but is preferably 15 ⁇ m or less, and more preferably 10 ⁇ m or less from the viewpoint of the pattern shape. If the thickness of the resist pattern 2 is 5 ⁇ m or more, the implanted ions can be effectively shielded at the time of ion implantation. If the thickness of the resist pattern 2 is 15 ⁇ m or less (preferably 10 ⁇ m or less), a good pattern shape can be maintained, and as a result, ions can be efficiently implanted in the targeted range at the time of ion implantation.
  • the S / N ratio can be further enhanced.
  • the resist pattern 2 of the above thickness may be formed by coating the resist composition twice or more, but it is preferable to form it by a single application from the viewpoint of manufacturing cost. That is, it is preferable to form a resist film having a thickness of 5 ⁇ m or more by one-time application of the resist composition and perform pattern formation on this resist film to form a resist pattern 2 having a thickness of 5 ⁇ m or more.
  • the resist composition may be either a positive photosensitive composition or a negative photosensitive composition, but a positive photosensitive composition is preferable because it is easy to form a fine pattern.
  • the solid content concentration of the resist composition is preferably 25% by mass or more, more preferably 30% by mass or more, still more preferably 31% by mass or more, particularly preferably 32% by mass or more. preferable. If the solid content concentration of the resist composition is 25% by mass or more, it is easy to form a resist film having a thickness of 5 ⁇ m or more by one application. In particular, when the solid content concentration of the resist composition is 30% by mass or more, it is easy to form a resist pattern having a good pattern shape.
  • the upper limit of the solid content concentration of the resist composition is preferably 45% by mass or less, more preferably 42.5% by mass or less, and still more preferably 40% by mass or less.
  • the viscosity at 25 ° C. of the resist composition is preferably 30 to 1000 mPa ⁇ s, more preferably 100 to 1000 mPa ⁇ s, from the viewpoint of coatability.
  • the upper limit is preferably 800 mPa ⁇ s or less, more preferably 700 mPa ⁇ s or less, and still more preferably 600 mPa ⁇ s or less.
  • the lower limit is preferably 150 mPa ⁇ s or more, more preferably 200 mPa ⁇ s or more, and still more preferably 300 mPa ⁇ s or more.
  • the resist composition used in the present invention contains a resin, and the content of the resin in the solid content of the resist composition is preferably 95 to 99.9% by mass, and is 96 to 99.9% by mass. More preferably, the content is 97 to 99.9% by mass.
  • the Onishi parameter of the resin contained in the resist composition is preferably 3.0 or less, more preferably 2.9 or less, still more preferably 2.8 or less, and 2.7 or less. Is particularly preferred.
  • the lower limit is preferably, for example, 2.5 or more. If the Onishi parameter of the resin contained in the resist composition is 3.0 or less, it is easy to manufacture a device having a high S / N ratio to the target light. It is surmised that the reason why such an effect can be obtained is that a resist film which can easily shield the ions implanted at the time of ion implantation can be formed.
  • the case where the Onishi parameter of the resin contained in the resist composition is 3.0 or less means the following. That is, when only one type of resin is contained in the resist composition, it means that the Onishi parameter of the resin itself is 3.0 or less. Moreover, when resin contained in a resist composition is 2 or more types, the value calculated from the sum of the product of content of each resin and a large west parameter is meant. Moreover, the Onishi parameter of each resin uses the value calculated by the above-mentioned formula.
  • a resin having an Onishi parameter of 3.0 or less in the total resin preferably a resin having an Onishi parameter of 2.8 or less, more preferably an Onishi parameter of 2
  • the content of the resin (less than or equal to 7) is preferably 50 to 100% by mass, more preferably 60 to 100% by mass, and still more preferably 75 to 100% by mass.
  • a well-known coating method can be used.
  • drop method drop cast
  • slit coating method spray method
  • roll coating method spin coating method
  • cast coating method cast coating method
  • slit and spin method pre-wet method
  • inkjet for example, on-demand method, piezo method, thermal method
  • ejection system printing such as nozzle jet, flexo printing, screen printing, gravure printing, reverse offset printing, metal mask printing method, etc.
  • a transfer method using a mold or the like may be mentioned, and a spin coating method is preferable.
  • coating by spin coating is preferably performed at a rotational speed of 1000 to 2000 rpm.
  • spin coating is carried out in order to spread it as a thin film as described in JP-A-10-142603, JP-A-11-302413, JP-A-2000-157922, or spin-off and drying. To do so, the rotational speed may be increased during application.
  • the spin coat process described in "Advanced Color Filter Process Technology and Chemicals", Jan. 31, 2006, published by CMC can be suitably used.
  • the drying temperature is preferably 80 to 150 ° C., more preferably 80 to 140 ° C., and still more preferably 80 to 130 ° C.
  • the heating time is preferably 30 to 1000 seconds, more preferably 60 to 800 seconds, and still more preferably 60 to 600 seconds.
  • a pattern formation method using a photolithography method a step of exposing a resist film formed on a support with an actinic ray or radiation (exposure step), and a step of developing the exposed resist film using a developer It is preferable to include (developing step).
  • the exposure step is a step of exposing the resist film, and can be performed, for example, by the following method.
  • the resist film formed as described above is irradiated with actinic rays or radiation through a predetermined mask. Note that, in the case of electron beam irradiation, drawing (direct drawing) not through a mask is common.
  • the actinic ray or radiation is not particularly limited, and examples thereof include KrF excimer laser, ArF excimer laser, extreme ultraviolet (EUV, Extreme Ultra Violet), electron beam (EB, Electron Beam) and the like, and extreme ultraviolet or electron beam is particularly preferable. .
  • the exposure may be immersion exposure.
  • a resist film is formed using a positive photosensitive composition
  • the bake accelerates the reaction of the exposed portion, and the sensitivity and the pattern shape become better.
  • the heating temperature is preferably 80 to 150 ° C., more preferably 80 to 140 ° C., and still more preferably 80 to 130 ° C.
  • the heating time is preferably 30 to 1000 seconds, more preferably 60 to 800 seconds, and still more preferably 60 to 600 seconds.
  • the developing step is a step of developing the exposed resist film with a developer.
  • the exposed portion of the resist film is developed and removed.
  • the resist film is formed using the negative photosensitive composition, the unexposed part of the resist film is developed and removed.
  • the developing solution (organic type developing solution) containing an organic solvent, the aqueous solution containing an alkali agent (alkali developing solution), etc. are mentioned. It can be appropriately selected according to the type of resist film.
  • organic solvents are widely used as the organic solvent used in the organic developer, and, for example, ester solvents, ketone solvents, alcohol solvents, amide solvents, ether solvents, hydrocarbon solvents, etc. Solvents can be used.
  • the organic solvent is selected from the group consisting of hydrocarbon solvents, ketone solvents, ester solvents, alcohol solvents, amide solvents and ether solvents, and organic solvents containing at least one of a fluorine atom and a silicon atom.
  • the hydrocarbon solvents or ketone solvents having 5 or more carbon atoms are more preferable, and the hydrocarbon solvents having 7 or more carbon atoms or the ketone solvents having 7 or more carbon atoms are particularly preferable.
  • the ester solvent is a solvent having an ester bond in the molecule
  • the ketone solvent is a solvent having a ketone group in the molecule
  • the alcohol solvent is in the molecule.
  • a solvent having an alcoholic hydroxyl group, an amide solvent is a solvent having an amide group in the molecule, and an ether solvent is a solvent having an ether bond in the molecule.
  • a solvent having a plurality of the above-mentioned functional groups in one molecule is also present, in which case it corresponds to any solvent type containing the functional group possessed by the solvent.
  • diethylene glycol monomethyl ether corresponds to both alcohol solvents and ether solvents in the above classification.
  • a hydrocarbon-type solvent is a hydrocarbon-type solvent which does not have a substituent.
  • ester solvents As specific examples of ester solvents, ketone solvents, alcohol solvents, amide solvents, ether solvents, and hydrocarbon solvents, the description in paragraphs 0021 to 0026 of International Publication WO 2016/104565 can be referred to. The contents are incorporated herein.
  • a plurality of the above organic solvents may be mixed, or may be used by mixing with a solvent other than the above or water.
  • the water content of the entire developer is preferably less than 10% by mass, and it is more preferable that the developer not contain water substantially.
  • the concentration of the organic solvent (total in the case of a plurality of mixtures) in the developer is preferably 50% by mass or more, more preferably 50 to 100% by mass, still more preferably 85 to 100% by mass, still more preferably 90 to 100% %, Particularly preferably 95 to 100% by mass. Most preferably, it consists essentially of an organic solvent.
  • the case where it consists substantially only of an organic solvent shall include the case where a trace amount surfactant, an antioxidant, a stabilizer, an antifoamer, etc. are contained.
  • the organic developer preferably contains an antioxidant, a basic compound, and a surfactant.
  • an antioxidant and the basic compound the description in paragraphs 0047 to 0078 of International Publication WO 2016/104565 can be referred to, and the contents thereof are incorporated herein.
  • surfactant the thing similar to surfactant which the below-mentioned resist composition may contain can be used.
  • alkali developer examples include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate and aqueous ammonia, primary amines such as ethylamine and n-propylamine, diethylamine and di-amine.
  • inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate and aqueous ammonia
  • primary amines such as ethylamine and n-propylamine, diethylamine and di-amine.
  • Secondary amines such as n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide and tetrapropylammonium hydroxide , Tetrabutylammonium hydroxide, tetrapentylammonium hydroxide, tetrahexylammonium hydroxide, tetraoctylammonium hydroxide, ethyltrimethy Tetraalkyl ammonium hydroxides such as ammonium hydroxide, butyl trimethyl ammonium hydroxide, methyl triamyl ammonium hydroxide, dibutyl dipentyl ammonium hydroxide, dimethyl bis (2-hydroxyethyl) ammonium hydroxide, trimethyl phenyl ammonium hydroxide, tri
  • the alkaline developer can be used by adding an appropriate amount of alcohol and surfactant to the above-mentioned alkaline aqueous solution.
  • the alkali agent concentration of the alkali developer is preferably 0.1 to 20% by mass.
  • the pH of the alkaline developer is preferably 10.0 to 15.0.
  • the alkaline developing solution described in paragraph 0460 of JP-A-2014-048500 can also be used, and the contents thereof are incorporated in the present specification.
  • a developing method for example, a method of immersing the support in a bath filled with a developer for a certain time (dip method), a method of developing by standing up the developer on the surface of the support by surface tension and standing for a certain time (Paddle method), a method of spraying a developer on the surface of a support (spray method), a method of continuing a discharge of a developer while scanning a developer discharge nozzle at a constant speed on a support rotating at a constant speed Dynamic dispensing method etc.
  • the development time is not particularly limited, and is usually 10 to 300 seconds, preferably 20 to 120 seconds.
  • the temperature of the developing solution is preferably 0 to 50 ° C., more preferably 15 to 35 ° C.
  • both development using an organic developer and development using an alkaline developer may be performed (so-called double development may be performed). Thereby, a finer pattern can be formed.
  • the organic solvent used for the rinse solution is preferably at least one organic solvent selected from the group consisting of hydrocarbon solvents, ketone solvents, ester solvents, alcohol solvents, amide solvents and ether solvents.
  • the details of the organic solvent used for the rinse solution can be referred to the description of paragraphs [0081] to [0084] of WO 2016/104565, the content of which is incorporated herein.
  • the method of the rinse treatment is not particularly limited, for example, a method of continuing to discharge the rinse liquid on the support rotating at a constant speed (rotation discharge method), the support in the bath filled with the rinse liquid for a predetermined time
  • a method of immersion (dip method), a method of spraying a rinse solution on the surface of the support (spray method) or the like can be applied.
  • the rinse time is not particularly limited, but is preferably 10 seconds to 300 seconds, more preferably 10 seconds to 180 seconds, and most preferably 20 seconds to 120 seconds.
  • the temperature of the rinse solution is preferably 0 to 50 ° C., and more preferably 15 to 35 ° C.
  • a process of removing the developer or the rinse solution adhering on the pattern with a supercritical fluid can be performed. Furthermore, after development processing or rinse processing or processing with a supercritical fluid, heat treatment can be performed to remove the solvent remaining in the pattern.
  • the heating temperature is not particularly limited as long as a good resist pattern can be obtained, and is usually 40 to 160 ° C.
  • the heating temperature is preferably 50 to 150 ° C., and most preferably 50 to 110 ° C.
  • the heating time is not particularly limited as long as a good resist pattern can be obtained, but it is generally 15 to 300 seconds, preferably 15 to 180 seconds.
  • ion implantation is performed on the support 1 using the resist pattern 2 formed as described above as a mask (FIG. 2). By doing this, an impurity is introduced into the exposed portion of the surface of the support from the resist pattern, and the photodiode portion 3 is formed on the support 1.
  • the ion implantation is a method of ionizing impurities serving as donors and acceptors, accelerating them, and implanting them into a support to introduce the impurities.
  • impurities include p-type impurities such as boron and aluminum, and n-type impurities such as phosphorus and arsenic, and it is preferable to select appropriately according to the purpose.
  • a p-type impurity such as boron or aluminum.
  • boron are more preferred.
  • n-type impurity such as phosphorus or arsenic.
  • the ion implantation conditions are not particularly limited.
  • the amount of energy is preferably 100 to 5000 KeV.
  • the upper limit is preferably 400 KeV or less, more preferably 300 KeV or less, and still more preferably 200 KeV or less.
  • the lower limit is preferably 150 KeV or more, more preferably 200 KeV or more, and still more preferably 300 KeV or more.
  • the dose is preferably 1 ⁇ 10 12 to 1 ⁇ 10 14 cm ⁇ 2 .
  • the upper limit is preferably 8 ⁇ 10 13 cm ⁇ 2 or less, more preferably 5 ⁇ 10 13 cm ⁇ 2 or less, and still more preferably 3 ⁇ 10 13 cm ⁇ 2 or less.
  • the lower limit is preferably 2 ⁇ 10 12 cm ⁇ 2 or more, more preferably 3 ⁇ 10 12 cm ⁇ 2 or more, and still more preferably 5 ⁇ 10 12 cm ⁇ 2 or more.
  • the ion implantation may be performed with the amount of energy being decreased stepwise, or may be performed with the amount of energy increased stepwise.
  • the energy amount is reduced stepwise, an effect of reducing noise derived from damage to the resist pattern can be expected.
  • increasing the amount of energy stepwise since ions can be injected deeper, it is expected that the signal intensity to be taken out can be increased.
  • a light receiving element is manufactured through such a process.
  • the peeling method of a resist pattern A well-known method can be used.
  • the resist removing solution reference can be made to paragraph Nos. 0011 to 0043 of JP-A-2014-142635, the contents of which are incorporated herein.
  • the method may further include the step of forming an insulating film, a control electrode, a metal wiring layer, a source electrode, a drain electrode, and the like.
  • a layer of a composition for forming a pixel of an optical filter is formed on at least a part of the light receiving element manufactured as described above on which the ion implantation is performed.
  • the optical filter means a filter that transmits light.
  • the light transmitted by the optical filter is not particularly limited, and examples thereof include ultraviolet light, visible light, and infrared light.
  • the optical filter in the present invention only needs to transmit light of at least a part of the wavelength of the incident light. That is, the optical filter of the present invention may selectively transmit or block light of a specific wavelength among incident light, and may transmit substantially all incident light.
  • the layer of the composition for forming a pixel can be formed by applying the composition for forming a pixel to a light receiving element.
  • the composition for forming a pixel includes a composition for forming a colored pixel, a composition for forming a pixel of an infrared ray transmitting layer, a composition for forming a pixel for an infrared ray cut layer, etc.
  • the composition for forming a colored pixel and the infrared ray transmitting layer It is preferably at least one selected from the composition for forming a pixel. Details of the composition for forming a pixel will be described later.
  • the layer of the composition for forming a pixel may be formed directly on the light receiving element, but another layer such as an underlayer is formed on the light receiving element, and the layer of the composition for forming a pixel is formed on these layers. You may form.
  • methods other than the method specified in the present invention on light receiving elements for example, a method of forming a pattern by dry etching method to form pixels, exposing with light having a wavelength of 300 nm (for example, i-line etc.) Then, a pixel may be formed in advance by a method of forming a pixel, etc., and a layer of a composition for forming a pixel may be formed on the pixel.
  • a known method can be used as a method of applying the composition for forming a pixel.
  • dropping method drop casting
  • slit coating method spraying method
  • roll coating method spin coating method
  • cast coating method for example, JP 2009-145395A
  • pre-wet method for example, JP 2009-145395A
  • Ink jet for example, on-demand method, piezo method, thermal method
  • discharge system printing such as nozzle jet, flexographic printing, screen printing, gravure printing, reverse offset printing, metal mask printing method, etc.
  • the application method in the inkjet is not particularly limited, and for example, the method (in particular, page 115-) disclosed in "Spread and usable inkjet-unlimited possibilities in patents-published in February 2005, resident Betechno Research" Methods described in JP-A-2003-262716, JP-A-2003-185831, JP-A-2003-261827, JP-A-2012-126830, JP-A-2006-169325, etc. It can be mentioned.
  • the layer of the composition for forming a pixel (hereinafter, also referred to as a composition layer) formed by applying the composition for forming a pixel may be dried (prebaked).
  • the prebaking temperature is preferably 150 ° C. or less, more preferably 120 ° C. or less, and still more preferably 110 ° C. or less.
  • the lower limit may be, for example, 50 ° C. or more, and may be 80 ° C. or more.
  • the pre-bake time is preferably 10 seconds to 3000 seconds, more preferably 40 to 2500 seconds, and still more preferably 80 to 220 seconds. Prebaking can be performed using a hot plate, an oven, or the like.
  • the composition layer formed as described above is irradiated with light having a wavelength of 300 nm or less to expose it in a pattern.
  • the composition layer can be pattern-exposed by exposing the composition layer through a mask having a predetermined mask pattern using an exposure apparatus such as a stepper. Thereby, the exposed portion can be cured.
  • the light which can be used for exposure may be light having a wavelength of 300 nm or less, preferably light having a wavelength of 180 to 300 nm. Specifically, KrF radiation (wavelength 248 nm), ArF (wavelength 193 nm), etc.
  • KrF radiation (wavelength 248 nm) is preferable from the viewpoint that bonds such as resins contained in the composition for pixel formation are hardly broken.
  • the exposure dose is preferably, for example, 1 to 2000 mJ / cm 2 .
  • the upper limit is preferably 1000 mJ / cm 2 or less, more preferably 500 mJ / cm 2 or less from the viewpoint of productivity.
  • the lower limit is desirably 5 mJ / cm 2 or more, more preferably 10 mJ / cm 2 or more, 20 mJ / cm 2 or more from the viewpoint of adhesion to the pixel-forming property and the underlying more preferred.
  • the oxygen concentration at the time of exposure can be appropriately selected, and in addition to being performed under the atmosphere, for example, under a low oxygen atmosphere having an oxygen concentration of 19% by volume or less (eg, 15% by volume, 5% by volume, substantially oxygen free , And may be exposed in a high oxygen atmosphere (for example, 22% by volume, 30% by volume, 50% by volume) in which the oxygen concentration exceeds 21% by volume.
  • the exposure illuminance can be set appropriately, and can usually be selected from the range of 1000 W / m 2 to 100000 W / m 2 (for example, 5000 W / m 2 , 15000 W / m 2 , 35000 W / m 2 ) .
  • Oxygen concentration and exposure illuminance may appropriately combined conditions, for example, illuminance 10000 W / m 2 at an oxygen concentration of 10 vol%, oxygen concentration of 35 vol% can be such illuminance 20000W / m 2.
  • the composition layer after exposure is developed. More specifically, the composition layer in the unexposed area of the composition layer after exposure is developed and removed to form a pixel (pattern).
  • the development of the composition layer can be carried out using a developer. As a result, the composition layer in the unexposed area in the exposure step is eluted into the developer, and only the photocured area remains on the light receiving element.
  • a developing solution an alkaline developing solution which does not damage the light receiving element of the base and the like is desirable.
  • the temperature of the developing solution is preferably, for example, 20 to 30.degree.
  • the development time is preferably 20 to 180 seconds.
  • the process of shaking off the developer every 60 seconds and further supplying the developer anew may be repeated several times.
  • alkaline agent used for a developing solution for example, ammonia water, ethylamine, diethylamine, dimethylethanolamine, diglycolamine, diethanolamine, hydroxyamine, ethylenediamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, Tetrabutylammonium hydroxide, ethyltrimethylammonium hydroxide, benzyltrimethylammonium hydroxide, dimethylbis (2-hydroxyethyl) ammonium hydroxide, choline, pyrrole, piperidine, 1,8-diazabicyclo [5.4.0] -7 -Organic alkaline compounds such as undecene, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium hydrogen carbonate Um, sodium silicate, and inorganic alkaline compound such as sodium metasilicate.
  • the alkaline agent is preferably a compound having a large molecular weight in terms of the environment and safety.
  • an alkaline aqueous solution obtained by diluting such an alkaline agent with pure water is preferably used.
  • the concentration of the alkaline agent in the alkaline aqueous solution is preferably 0.001 to 10% by mass, and more preferably 0.01 to 1% by mass.
  • a surfactant may be used in the developer.
  • the developer may be prepared once as a concentrate and diluted to a concentration required for use, from the viewpoint of transportation and storage convenience.
  • the dilution ratio is not particularly limited, but can be set, for example, in the range of 1.5 to 100 times.
  • clean (rinse) by a pure water after image development.
  • additional exposure processing or heat processing can be performed.
  • the additional exposure process and post-baking are post-development processes to complete curing of the film.
  • light used for exposure is preferably g-line, h-line, i-line or the like, more preferably i-line. Moreover, the light which combined two or more these may be sufficient.
  • Examples of light sources include ultra-high pressure mercury lamps, metal halide lamps, and laser light sources.
  • the illuminance is preferably 500 to 100,000 W / m 2 .
  • the exposure dose is preferably, for example, 500 to 10000 mJ / cm 2 .
  • the post-baking temperature is preferably 50 to 240 ° C., for example. From the viewpoint of film curing, 180 to 230 ° C. is more preferable.
  • the thickness of the pixel is preferably 1.0 ⁇ m or less, and more preferably 0.3 to 1.0 ⁇ m. 0.8 micrometer or less is preferable and, as for an upper limit, 0.6 micrometer or less is more preferable.
  • the lower limit is preferably 0.4 ⁇ m or more.
  • the thickness of the pixel is preferably 1.0 ⁇ m or less, and more preferably 0.3 to 1.0 ⁇ m. 0.8 micrometer or less is preferable and, as for an upper limit, 0.6 micrometer or less is more preferable.
  • the lower limit is preferably 0.4 ⁇ m or more.
  • the film thickness of the pixel is preferably 2.0 ⁇ m or less, and more preferably 0.3 to 2.0 ⁇ m.
  • the upper limit is preferably 1.0 ⁇ m or less, more preferably 0.6 ⁇ m or less.
  • the lower limit is preferably 0.4 ⁇ m or more.
  • the film thickness of the pixel is preferably 2.0 ⁇ m or less, and more preferably 0.3 to 2.0 ⁇ m.
  • the upper limit is preferably 1.0 ⁇ m or less, more preferably 0.6 ⁇ m or less.
  • the lower limit is preferably 0.4 ⁇ m or more.
  • the size (line width) of the pixel to be formed is preferably selected appropriately in accordance with the application and the type of the optical filter. For example, 2.0 micrometers or less are preferable.
  • the upper limit is preferably 1.0 ⁇ m or less, more preferably 0.9 ⁇ m or less.
  • the lower limit is preferably 0.4 ⁇ m or more.
  • the size (line width) of the pixel is preferably 2.0 ⁇ m or less.
  • the upper limit is preferably 1.0 ⁇ m or less, more preferably 0.9 ⁇ m or less.
  • the lower limit is preferably 0.4 ⁇ m or more.
  • the size (line width) of the pixel is preferably 2.0 ⁇ m or less.
  • the upper limit is preferably 1.0 ⁇ m or less, more preferably 0.9 ⁇ m or less.
  • the lower limit is preferably 0.4 ⁇ m or more.
  • the size (line width) of the pixel is preferably 2.0 ⁇ m or less.
  • the upper limit is preferably 1.0 ⁇ m or less, more preferably 0.9 ⁇ m or less.
  • the lower limit is preferably 0.4 ⁇ m or more.
  • At least one type of pixels may be formed through the above-described steps. For example, after patterning the first type of pixels by dry etching, the second and subsequent pixels may be manufactured through the above-described steps.
  • at least one of a plurality of types of pixels may be irradiated with light having a wavelength of more than 300 nm, exposed in a pattern, and developed to form a pixel.
  • light having a wavelength of 300 nm or more may be irradiated to be exposed in a pattern and developed to form the pixels.
  • Devices manufactured according to the present invention include an optical sensor such as a solid-state imaging device, an image display device, and the like.
  • an optical sensor such as a solid-state imaging device, an image display device, and the like.
  • an infrared cut filter 111 and an infrared transmission filter 114 are formed in an imaging region of the light receiving element 110.
  • a color filter 112 is stacked on the infrared cut filter 111.
  • a microlens 115 is disposed on the incident light h ⁇ side of the color filter 112 and the infrared transmission filter 114.
  • a planarization layer 116 is formed to cover the microlenses 115.
  • the infrared cut filter 111 is a filter having pixels of an infrared cut layer.
  • the infrared cut layer has spectral characteristics of transmitting visible light and shielding at least a part of the infrared light.
  • the spectral characteristics of the infrared cut layer are appropriately selected in accordance with the spectral characteristics of the infrared transmission filter 114.
  • the infrared cut filter 111 is preferably a filter that blocks at least part of light in the wavelength range of 700 to 1300 nm.
  • the average transmittance of light in the wavelength range of 400 to 700 nm of the infrared cut filter 111 is preferably 60 to 100%, more preferably 70 to 100%, and particularly preferably 80 to 100%. preferable.
  • the average transmittance in this wavelength range is preferably high.
  • the color filter 112 is a filter having colored pixels. Examples of colored pixels include red pixels, blue pixels, green pixels, cyan pixels, magenta pixels, and yellow pixels.
  • the infrared transmitting filter 114 is a filter having pixels of an infrared transmitting layer.
  • a filter layer having any of the following spectral characteristics (1) to (4) can be mentioned.
  • a filter layer whose minimum value in the wavelength range of 800 to 1300 nm is 70% or more (preferably 75% or more, more preferably 80% or more).
  • this filter layer it is possible to block light having a wavelength of 400 to 640 nm and transmit infrared light having a wavelength of 720 nm.
  • the maximum value of light transmittance in the thickness direction in the wavelength range of 400 to 750 nm is 20% or less (preferably 15% or less, more preferably 10% or less), and light transmittance in the thickness direction
  • a filter layer whose minimum value in the wavelength range of 900 to 1300 nm is 70% or more (preferably 75% or more, more preferably 80% or more). According to this filter layer, it is possible to block light in the wavelength range of 400 to 750 nm and transmit infrared light having a wavelength of 850 nm.
  • the maximum value of light transmittance in the thickness direction in the wavelength range of 400 to 850 nm is 20% or less (preferably 15% or less, more preferably 10% or less), and light transmittance in the thickness direction
  • a filter layer whose minimum value in the wavelength range of 1000 to 1300 nm is 70% or more (preferably 75% or more, more preferably 80% or more). According to this filter layer, it is possible to block light in the wavelength range of 400 to 850 nm and transmit infrared radiation having a wavelength of 940 nm.
  • the maximum value of light transmittance in the thickness direction in the wavelength range of 400 to 950 nm is 20% or less (preferably 15% or less, more preferably 10% or less), and light transmittance in the thickness direction
  • a filter layer whose minimum value in the wavelength range of 1100 to 1300 nm is 70% or more (preferably 75% or more, more preferably 80% or more). According to this filter layer, it is possible to block light having a wavelength of 400 to 950 nm and transmit infrared light having a wavelength of 1040 nm.
  • the device shown in FIG. 3 includes the infrared ray transmission filter 114, the color filter 112, and the infrared ray cut filter 111, an embodiment in which the infrared ray cut filter 111 is not provided or a color filter 112 and an infrared ray cut filter 111 are provided. Alternatively, the infrared transmission filter 114 may not be provided.
  • materials for producing an optical sensor such as a solid-state imaging device be a material which does not generate an alpha ray.
  • materials for producing an optical sensor such as a solid-state imaging device be a material which does not generate an alpha ray.
  • a high purity material in which radioactive elements such as uranium and thorium contained in the material are reduced.
  • the content of uranium and thorium is preferably 5 mass ppb or less, and more preferably 1 mass ppb or less.
  • Uranium and thorium are preferably not substantially contained, but may be contained within a range where soft errors do not occur, from the balance of purification and cost.
  • the resist composition used in the method for producing a device of the present invention may be either a positive photosensitive composition or a negative photosensitive composition, but a positive photosensitive composition because it is easy to form a fine pattern. Is preferred.
  • the resist composition is preferably a composition containing a resin which is decomposed by the action of an acid and whose solubility in a developer changes, and a photoacid generator. Such resist composition can be preferably used as a positive photosensitive composition.
  • the solid content concentration of the resist composition is preferably 25% by mass or more, more preferably 30% by mass or more, still more preferably 31% by mass or more, particularly preferably 32% by mass or more. preferable. If the solid content concentration of the resist composition is 25% by mass or more, it is easy to form a resist film having a thickness of 5 ⁇ m or more by one application. In particular, when the solid content concentration of the resist composition is 30% by mass or more, it is easy to form a resist pattern having a good pattern shape.
  • the upper limit of the solid content concentration of the resist composition is preferably 45% by mass or less, more preferably 42.5% by mass or less, and still more preferably 40% by mass or less.
  • the viscosity at 25 ° C. of the resist composition is preferably 30 to 1000 mPa ⁇ s from the viewpoint of coatability, and more preferably 100 to 1000 mPa ⁇ s.
  • the upper limit is preferably 800 mPa ⁇ s or less, more preferably 700 mPa ⁇ s or less, and still more preferably 600 mPa ⁇ s or less.
  • the lower limit is preferably 150 mPa ⁇ s or more, more preferably 200 mPa ⁇ s or more, and still more preferably 300 mPa ⁇ s or more.
  • the resist composition preferably contains a resin having a repeating unit having a group which is decomposed by the action of an acid to form a polar group, and a photoacid generator, and the solid content concentration is preferably 30% by mass or more.
  • a resin having a repeating unit having a group which is decomposed by the action of an acid to form a polar group and a photoacid generator, and the solid content concentration is preferably 30% by mass or more.
  • the resist composition preferably contains a resin.
  • the content of the resin in the solid content of the resist composition is preferably 95.0 to 99.9% by mass and 96.0 to 99.9% by mass with respect to the total solid content of the resist composition. Is more preferably 97.0 to 99.9% by mass.
  • the Onishi parameter of the resin contained in the resist composition is preferably 3.0 or less, more preferably 2.9 or less, still more preferably 2.8 or less, and 2.7 or less. Is particularly preferred. If the Onishi parameter of the resin contained in the resist composition is 3.0 or less, it is easy to manufacture an infrared light receiving element having a high S / N ratio to infrared light. It is surmised that the reason why such an effect can be obtained is that a resist film which can easily shield the ions implanted at the time of ion implantation can be formed.
  • the resist composition contains two or more resins, a resin having an Onishi parameter of 3.0 or less in the total resin (preferably a resin having an Onishi parameter of 2.8 or less, more preferably a resin having an Onishi parameter of 2.7 or less
  • the content of (A) is preferably 50 to 100% by mass, more preferably 60 to 100% by mass, and still more preferably 75 to 100% by mass.
  • the resin contained in the resist composition is a resin (hereinafter also referred to as an acid-degradable resin) having a repeating unit having a group which is decomposed by the action of an acid to generate a polar group (hereinafter also referred to as "acid-degradable group"). It is preferable to include.
  • Examples of the acid decomposable group possessed by the acid decomposable resin include a group having a structure in which a polar group is protected by a group which is released by the action of an acid (hereinafter, also referred to as a leaving group).
  • a polar group a phenolic hydroxyl group, a carboxyl group, a fluorinated alcohol group, a sulfonic acid group, a sulfonamide group, a sulfonylimide group, (alkylsulfonyl) (alkylcarbonyl) methylene group, (alkylsulfonyl) (alkylcarbonyl) imide group Bis (alkylcarbonyl) methylene, bis (alkylcarbonyl) imide, bis (alkylsulfonyl) methylene, bis (alkylsulfonyl) imide, tris (alkylcarbonyl) methylene, tris (alkylsulfonyl) methylene and the like
  • acidic groups groups that are conventionally used as a developer for resists and that dissociate in a 2.38 mass% tetramethylammonium hydroxide aqueous solution
  • Rx 11 ⁇ Rx 13 each independently represents an alkyl group (linear or branched) or a cycloalkyl group (monocyclic or polycyclic).
  • the carbon number of the alkyl group is preferably 1 to 12, more preferably 1 to 6, and still more preferably 1 to 4.
  • Rx 11 to Rx 13 are alkyl groups (linear or branched)
  • at least two of Rx 11 to Rx 13 are preferably methyl groups. More preferably, Rx 11 to Rx 13 are each independently a linear or branched alkyl group, and still more preferably, Rx 11 to Rx 13 are each independently a linear alkyl group. Two of Rx 11 to Rx 13 may combine to form a ring.
  • the ring formed by combining two of Rx 11 to Rx 13 includes a monocyclic cycloalkyl group such as cyclopentyl group and cyclohexyl group, norbornyl group, tetracyclodecanyl group, tetracyclododecanyl group, adamantyl group and the like And polycyclic cycloalkyl groups are preferred. Particularly preferred is a monocyclic cycloalkyl group having 5 to 6 carbon atoms.
  • one of the methylene groups constituting the ring may be replaced by a hetero atom such as an oxygen atom or a group having a hetero atom (for example, a carbonyl group).
  • a hetero atom such as an oxygen atom or a group having a hetero atom (for example, a carbonyl group).
  • Rx 11 is a methyl group or an ethyl group and Rx 12 and Rx 13 are bonded to form the above-mentioned cycloalkyl group is preferable.
  • each of R 36 to R 38 independently represents a hydrogen atom or a monovalent organic group.
  • R 37 and R 38 may bond to each other to form a ring.
  • the monovalent organic group include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and an alkenyl group.
  • R 36 is also preferably a hydrogen atom.
  • L 1 and L 2 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or a group obtained by combining an alkylene group and an aryl group.
  • M represents a single bond or a divalent linking group.
  • Q represents an alkyl group, a cycloalkyl group which may contain a hetero atom, an aryl group which may contain a hetero atom, an amino group, an ammonium group, a mercapto group, a cyano group or an aldehyde group.
  • At least one of L 1 and L 2 is a hydrogen atom, and at least one is preferably an alkyl group, a cycloalkyl group, an aryl group, or a group obtained by combining an alkylene group and an aryl group. At least two of Q, M and L 1 may combine to form a ring (preferably, a 5- or 6-membered ring).
  • L 2 is preferably a secondary or tertiary alkyl group, and more preferably a tertiary alkyl group. Examples of secondary alkyl groups include isopropyl, cyclohexyl and norbornyl groups, and tertiary alkyl groups include tert-butyl and adamantane.
  • Ar represents an aromatic ring group.
  • Rn represents an alkyl group, a cycloalkyl group or an aryl group.
  • Rn and Ar may bond to each other to form a non-aromatic ring.
  • Ar is more preferably an aryl group.
  • the repeating unit represented by the following general formula (AIa) or (AII) is preferable.
  • Xa 1 represents a hydrogen atom or an alkyl group.
  • T represents a single bond or a divalent linking group.
  • Ya represents a group which is eliminated by the action of an acid.
  • Ya is preferably a group represented by any one of formulas (Y11) to (Y14) described above. However, when Ya is a group represented by the formula (Y11) and two of Rx 11 , Rx 12 and Rx 13 combine to form a ring, the carbon number of Rx 11 , Rx 12 and Rx 13 The total of is 11 or more.
  • Examples of the alkyl group represented by Xa 1 include a methyl group or a group represented by —CH 2 —R 11 .
  • R 11 represents a halogen atom (such as fluorine atom), a hydroxy group or a monovalent organic group, and examples thereof include an alkyl group having 5 or less carbon atoms and an acyl group having 5 or less carbon atoms, preferably 3 or less carbon atoms Is an alkyl group, more preferably a methyl group.
  • Xa 1 is preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.
  • Examples of the divalent linking group represented by T include an alkylene group, -COO-Rt-, -O-Rt- and the like.
  • Rt represents an alkylene group or a cycloalkylene group.
  • T is preferably a single bond or -COO-Rt-.
  • Rt is preferably an alkylene group having a carbon number of 1 to 5, and more preferably -CH 2 -,-(CH 2 ) 2- or-(CH 2 ) 3- .
  • each of R 61 , R 62 and R 63 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group.
  • R 62 may combine with Ar 6 to form a ring, in which case R 62 represents a single bond or an alkylene group.
  • X 6 represents a single bond, -COO-, or -CONR 64- .
  • R 64 represents a hydrogen atom or an alkyl group.
  • L 6 represents a single bond or an alkylene group, and a single bond is preferable.
  • Ar 6 represents an (n + 1) -valent aromatic ring group, and when it forms a ring by bonding to R 62, it represents an (n + 2) -valent aromatic ring group.
  • the aromatic ring group represented by Ar 6 is preferably a benzene ring group or a naphthalene ring group, and more preferably a benzene ring group.
  • Y 2 each independently represents a group or a hydrogen atom which is eliminated by the action of an acid when n ⁇ 2. However, at least one of Y 2 represents a group capable of leaving by the action of an acid.
  • the group leaving by the action of an acid as Y 2 is preferably a group represented by any one of formulas (Y11) to (Y14) described above.
  • Y 2 is a group represented by the formula (Y 12) and two of Rx 11 , Rx 12 and Rx 13 combine to form a ring, carbons of Rx 11 , Rx 12 and Rx 13 The sum of the numbers is 11 or more.
  • n represents an integer of 1 to 4;
  • Each of the above groups in the formula (AIa) and the formula (AII) may have a substituent.
  • substituents include an alkyl group (1 to 4 carbon atoms), a halogen atom, a hydroxyl group, an alkoxy group (1 to 4 carbon atoms), a carboxyl group, and an alkoxycarbonyl group (2 to 6 carbon atoms).
  • an acid-degradable (meth) acrylic acid tertiary alkyl ester-based repeating unit (Xa 1 represents a hydrogen atom or a methyl group, and T represents a single bond) Is a repeating unit).
  • the acid decomposable resin may contain only one type of repeating unit having an acid degradable group, or may contain two or more types.
  • the content of the repeating unit having an acid decomposable group in the acid decomposable resin is preferably 5 to 90 mol% with respect to all the repeating units in the acid decomposable resin.
  • the lower limit is preferably 10 mol% or more, more preferably 15 mol% or more, and still more preferably 20 mol% or more.
  • the upper limit is more preferably 85 mol% or less, still more preferably 80 mol% or less.
  • the acid decomposable resin may contain a repeating unit having an acid group as a repeating unit other than the repeating unit having an acid degradable group.
  • a repeating unit having an acid group a carboxyl group, a sulfonamide group, a sulfonyl imide group, a bis sulfonyl imide group, a phenolic hydroxyl group etc. are mentioned.
  • the phenolic hydroxyl group is a group formed by substituting a hydrogen atom of an aromatic ring group with a hydroxyl group.
  • the aromatic ring is a monocyclic or polycyclic aromatic ring, and is, for example, an aromatic carbon which may have a substituent having a carbon number of 6 to 18, such as benzene ring, naphthalene ring, anthracene ring, fluorene ring, phenanthrene ring, etc.
  • a hydrogen ring or a heterocycle such as, for example, a thiophene ring, furan ring, pyrrole ring, benzothiophene ring, benzofuran ring, benzopyrrole ring, triazine ring, imidazole ring, benzoimidazole ring, triazole ring, thiadiazole ring, thiazole ring, etc.
  • the aromatic heterocyclic ring containing can be mentioned. Among them, a benzene ring and a naphthalene ring are preferable from the viewpoint of resolution, and a benzene ring is most preferable.
  • the repeating unit having an acid group is preferably a repeating unit having a phenolic hydroxyl group.
  • the repeating unit represented by following formula (30) is preferable.
  • R 31 , R 32 and R 33 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group.
  • R 33 may combine with Ar 3 to form a ring, in which case R 33 represents an alkylene group.
  • X 3 represents a single bond or a divalent linking group.
  • Ar 3 represents an (n 3 +1) -valent aromatic ring group, and when it forms a ring by bonding to R 33, it represents an (n 3 +2) -valent aromatic ring group.
  • n3 represents an integer of 1 to 4;
  • the (n3 + 1) -valent aromatic ring group represented by Ar 3 is, for example, an aromatic hydrocarbon group having 6 to 18 carbon atoms such as benzene ring, naphthalene ring group or anthracene ring group, thiophene ring group, furan ring group, pyrrole Aromatic ring group containing a hetero ring such as ring group, benzothiophene ring group, benzofuran ring group, benzopyrrole ring group, triazine ring group, imidazole ring group, benzoimidazole ring group, triazole ring group, thiadiazole ring group, thiazole ring group Can be mentioned.
  • Ar 3 is preferably a benzene ring group.
  • the (n3 + 1) -valent aromatic ring group represented by Ar 3 may further have a substituent. Examples of the substituent include an alkyl group and an alkoxy group.
  • Examples of the divalent linking group represented by X 3 include —COO— or —CONR 64 —.
  • R 64 represents a hydrogen atom or an alkyl group.
  • X 3 a single bond, -COO- or -CONH- is preferable, and a single bond or -COO- is more preferable.
  • N3 represents an integer of 1 to 4, preferably 1 or 2, and more preferably 1.
  • the acid-degradable resin may contain only one type of repeating unit having an acid group, or may contain two or more types.
  • the content of the repeating unit having an acid group in the acid decomposable resin is preferably 5 to 90 mol% with respect to all the repeating units in the acid decomposable resin.
  • the lower limit is preferably 10 mol% or more, more preferably 15 mol% or more, and still more preferably 20 mol% or more.
  • the upper limit is more preferably 85 mol% or less, still more preferably 80 mol% or less.
  • the acid-degradable resin may further contain a repeating unit having a lactone structure or a sultone (cyclic sulfonic acid ester) structure as a repeating unit other than the repeating unit having an acid-degradable group.
  • a repeating unit having a lactone structure or a sultone (cyclic sulfonic acid ester) structure the description in paragraphs 0161 to 0170 of International Publication WO 2016/104565 can be referred to, and the contents thereof are incorporated herein.
  • the acid decomposable resin is a repeating unit containing an organic group having a polar group as a repeating unit other than a repeating unit having an acid decomposable group, particularly a repeating unit having an alicyclic hydrocarbon structure substituted with a polar group. Can be included. When the acid-degradable resin contains such a repeating unit, the adhesion to the support and the developer affinity are improved.
  • the polar group is preferably a hydroxyl group or a cyano group.
  • an alicyclic hydrocarbon structure an adamantyl group, a diamantyl group, and a norbornane group are preferable.
  • the description of Paragraph No. 0172 of international publication WO2016 / 104565 can be referred to, and this content is included in this specification.
  • the acid decomposable resin can have a cyclic hydrocarbon structure having no polar group and a repeating unit not exhibiting acid degradability, as a repeating unit other than the repeating unit having an acid degradable group.
  • a repeating unit the repeating unit represented by Formula (IV) is mentioned.
  • R 5 represents a hydrocarbon group having at least one cyclic structure and no polar group.
  • Ra represents a hydrogen atom, an alkyl group or a -CH 2 -O-Ra 2 group.
  • Ra 2 represents a hydrogen atom, an alkyl group or an acyl group.
  • Ra 2 is preferably a hydrogen atom, a methyl group, a hydroxymethyl group or a trifluoromethyl group, particularly preferably a hydrogen atom or a methyl group.
  • the cyclic structure possessed by R 5 includes a monocyclic hydrocarbon group and a polycyclic hydrocarbon group.
  • the monocyclic hydrocarbon group for example, a cycloalkyl group having 3 to 12 carbon atoms such as cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group and the like, a cycloalkyl group having 3 to 12 carbon atoms such as cyclohexenyl group and the like And alkenyl groups and phenyl groups.
  • the polycyclic hydrocarbon group includes a ring-aggregated hydrocarbon group and a bridged cyclic hydrocarbon group.
  • ring-aggregated hydrocarbon groups include bicyclohexyl, perhydronaphthalenyl, biphenyl, 4-cyclohexylphenyl and the like.
  • a bridged cyclic hydrocarbon group for example, a bicyclic hydrocarbon ring group such as a pinane ring group, a bornane ring group, a norpinane ring group, a norbornane ring group, a bicyclooctane ring group, a homobredan ring group, an adamantane ring group, a tricyclo [ 5.2.1.0 Tricyclic hydrocarbon ring group such as 2,6 !
  • Decane ring group tricyclo [4.3.1.1 2,5 ] undecane ring group, tetracyclo [4.4.0.1 2,5 .
  • Examples thereof include tetracyclic hydrocarbon ring groups such as a [1, 7 10 ] dodecane ring group and a perhydro-1, 4-methano-5, 8-methanonaphthalene ring group.
  • the bridged cyclic hydrocarbon group a fused cyclic group in which a plurality of 5- to 8-membered cycloalkane rings are fused can be mentioned.
  • These cyclic hydrocarbon structures may have a substituent.
  • substituents include a halogen atom, an alkyl group, an alkoxy group, an acyl group and an alkoxycarbonyl group.
  • the acid decomposable resin has a cyclic hydrocarbon structure having no polar group and contains a repeating unit not showing acid decomposability
  • the content thereof is the total repeating units in the acid decomposable resin.
  • the amount is preferably 1 to 40 mol%, more preferably 2 to 20 mol%.
  • acid decomposable resin resin of the following structure etc. are mentioned, for example.
  • the numerical value attached to each repeating unit is a molar ratio.
  • the weight-average molecular weight of the acid-degradable resin is preferably 1,000 to 200,000, more preferably 2,000 to 20,000, still more preferably 3,000 to 15,000, particularly preferably 3, It is from 000 to 11,000.
  • the weight average molecular weight is 1,000 to 200,000, the film forming property and the developability are excellent.
  • the degree of dispersion (molecular weight distribution) of the acid-degradable resin is preferably 1.0 to 3.0, more preferably 1.0 to 2.6, and 1.0 to 2.0. Is more preferred.
  • the Onishi parameter of the acid-degradable resin is preferably 3.0 or less, more preferably 2.9 or less, still more preferably 2.8 or less, particularly preferably 2.7 or less preferable.
  • the lower limit is preferably, for example, 2.5 or more.
  • the content of the acid-degradable resin is preferably 30 to 99.9% by mass with respect to the total solid content of the resist composition.
  • the lower limit is preferably 50% by mass or more, more preferably 70% by mass or more, still more preferably 90% by mass or more, still more preferably 95% by mass or more, still more preferably 96% by mass or more, 97% by mass It is particularly preferable to be the above.
  • the acid-degradable resin only one type may be used, or two or more types may be used in combination.
  • the content of the acid-degradable resin in the total amount of the resin contained in the resist composition is preferably 50 to 100% by mass, more preferably 60 to 100% by mass, and 70 to 100% by mass. It is further preferable that the ratio is 80 to 100% by mass.
  • the resist composition may contain a hydrophobic resin as a resin.
  • the hydrophobic resin is preferably designed to be localized at the interface, but unlike the surfactant, it does not necessarily have to have a hydrophilic group in the molecule, which contributes to the uniform mixing of polar / nonpolar substances. You do not have to.
  • As an effect of adding a hydrophobic resin suppression of outgassing can be mentioned.
  • As the hydrophobic resin the description in paragraphs 0336 to 0374 of International Publication WO 2016/104565 can be referred to, and the contents thereof are incorporated herein.
  • the resist composition preferably contains a photoacid generator.
  • the photoacid generator may be in the form of a low molecular weight compound, or may be in a form incorporated into a part of a polymer, but is preferably in the form of a low molecular weight compound.
  • the molecular weight is preferably 3,000 or less, more preferably 2,000 or less, and still more preferably 1,000 or less.
  • the photoacid generator is not particularly limited, but an organic acid such as sulfonic acid, bis (alkylsulfonyl) imide or tris (alkylsulfonyl) methide by irradiation with an actinic ray or radiation, preferably electron beam or extreme ultraviolet ray.
  • an actinic ray or radiation preferably electron beam or extreme ultraviolet ray.
  • produces at least any of is preferable.
  • the compounds represented by the following formulas (ZI), (ZII) and (ZIII) can be mentioned more preferably, and the compounds represented by the formula (ZI) are more preferable.
  • each of R 201 , R 202 and R 203 independently represents an organic group.
  • the organic group R 201, R 202 and R 203 represents an aryl group, an alkyl group, such as cycloalkyl groups.
  • the aryl group include aryl groups having 6 to 14 carbon atoms.
  • Preferred examples of the alkyl group and the cycloalkyl group include linear or branched alkyl groups having 1 to 10 carbon atoms, and cycloalkyl groups having 3 to 10 carbon atoms.
  • the aforementioned aryl group, alkyl group and cycloalkyl group may further have a substituent.
  • halogen atoms such as nitro group and fluorine atom, carboxyl group, hydroxyl group, amino group, cyano group, alkoxy group (preferably having a carbon number of 1 to 15), cycloalkyl group (preferably having a carbon number of 3 to 15) , An aryl group (preferably having a carbon number of 6 to 14), an alkoxycarbonyl group (preferably having a carbon number of 2 to 7), an acyl group (preferably having a carbon number of 2 to 12), an alkoxycarbonyloxy group (preferably having a carbon number of 2 to 7) And the like, but is not limited thereto.
  • two of R 201 to R 203 may combine to form a ring structure, and the ring structure formed is an oxygen atom, a sulfur atom, an ester bond, an amide bond, a carbonyl in the ring It may contain a group.
  • the group formed by bonding of two of R 201 to R 203 include an alkylene group (eg, a butylene group and a pentylene group).
  • the number of aromatic rings included in the cation part (S + (R 201 ) (R 202 ) (R 203 )) is 2 or less from the viewpoint of improving the pattern shape by light transmittance improvement. It is preferable that the number is 1 or less, more preferably 1 or less, and it is more preferable that the aromatic ring is not contained.
  • Z ⁇ represents a non-nucleophilic anion (an anion having a very low ability to cause a nucleophilic reaction).
  • non-nucleophilic anion for example, sulfonic acid anion (aliphatic sulfonic acid anion, aromatic sulfonic acid anion, camphor sulfonic acid anion, etc.), carboxylic acid anion (aliphatic carboxylic acid anion, aromatic carboxylic acid anion, aralkyl Examples thereof include carboxylic acid anions, sulfonylimide anions, bis (alkylsulfonyl) imide anions and tris (alkylsulfonyl) methide anions.
  • the aliphatic moiety in the aliphatic sulfonic acid anion and aliphatic carboxylic acid anion may be an alkyl group or a cycloalkyl group, preferably a linear or branched alkyl group having 1 to 30 carbon atoms and the carbon number 3-30 cycloalkyl groups can be mentioned.
  • an aryl group having preferably 6 to 14 carbon atoms such as a phenyl group, a tolyl group and a naphthyl group can be mentioned.
  • the alkyl group, cycloalkyl group and aryl group mentioned above may have a substituent.
  • substituents include a halogen atom such as a nitro group and a fluorine atom, a carboxyl group, a hydroxyl group, an amino group, a cyano group, an alkoxy group (preferably having a carbon number of 1 to 15), and a cycloalkyl group (preferably having a carbon number of 3 to 15).
  • An aryl group (preferably having a carbon number of 6 to 14), an alkoxycarbonyl group (preferably having a carbon number of 2 to 7), an acyl group (preferably having a carbon number of 2 to 12), an alkoxycarbonyloxy group (preferably having a carbon number of 2 to 7), alkylthio group (preferably 1 to 15 carbon atoms), alkylsulfonyl group (preferably 1 to 15 carbon atoms), alkyliminosulfonyl group (preferably 1 to 15 carbon atoms), aryloxysulfonyl group (preferably carbon) 6 to 20), alkyl aryloxysulfonyl group (preferably having a carbon number of 7 to 20), cycloalkyl aryl Oxysulfonyl group (preferably having 10 to 20 carbon atoms), alkyloxyalkyloxy group (preferably having 5 to 20 carbon atoms), cycloalkylalkyloxyalkyloxy group (preferably having 8 to 20 carbon atoms) and
  • the aralkyl group in the aralkylcarboxylic acid anion is preferably an aralkyl group having a carbon number of 7 to 12, and examples thereof include a benzyl group, a phenethyl group, a naphthylmethyl group, a naphthylethyl group and a naphthylbutyl group.
  • a saccharin anion As a sulfonyl imide anion, a saccharin anion can be mentioned, for example.
  • the alkyl group in the bis (alkylsulfonyl) imide anion and tris (alkylsulfonyl) methide anion is preferably an alkyl group having 1 to 5 carbon atoms.
  • substituent of these alkyl groups include halogen atoms, alkyl groups substituted with halogen atoms, alkoxy groups, alkylthio groups, alkyloxysulfonyl groups, aryloxysulfonyl groups, cycloalkyl aryloxysulfonyl groups, etc.
  • a fluorine atom or an alkyl group substituted by a fluorine atom is preferred.
  • the alkyl groups in the bis (alkylsulfonyl) imide anion may be bonded to each other to form a ring structure. This increases the acid strength.
  • non-nucleophilic anions include, for example, fluorinated phosphorus (eg, PF 6 ⁇ ), fluorinated boron (eg, BF 4 ⁇ ), fluorinated antimony (eg, SbF 6 ⁇ ), etc. .
  • an aliphatic sulfonic acid anion in which at least the ⁇ -position of sulfonic acid is substituted with a fluorine atom, a fluorine atom or an aromatic sulfonic acid anion substituted with a group having a fluorine atom, and an alkyl group is a fluorine atom
  • an alkyl group is a fluorine atom
  • bis (alkylsulfonyl) imide anions substituted with and tris (alkylsulfonyl) methide anions wherein the alkyl group is substituted with a fluorine atom are bis (alkylsulfonyl) imide anions substituted with and tris (alkylsulfonyl) methide anions wherein the alkyl group is substituted with a fluorine atom.
  • non-nucleophilic anion more preferably a perfluoro aliphatic sulfonate anion (more preferably 4 to 8 carbon atoms), a benzene sulfonate anion having a fluorine atom, still more preferably a nonafluorobutane sulfonate anion, a perfluoro Octane sulfonate anion, pentafluorobenzene sulfonate anion, 3,5-bis (trifluoromethyl) benzene sulfonate anion.
  • a perfluoro aliphatic sulfonate anion more preferably 4 to 8 carbon atoms
  • a benzene sulfonate anion having a fluorine atom still more preferably a nonafluorobutane sulfonate anion, a perfluoro Octane sulfonate anion, pentafluorobenzene sul
  • the generated acid has a pKa of -1 or less.
  • anion represented by the following formula (AN1) is also mentioned as a preferred embodiment.
  • each of Xf independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom.
  • R 1 and R 2 each independently represent a hydrogen atom, a fluorine atom, or an alkyl group, and when there are a plurality of R 1 's and R 2' s , they may be the same or different.
  • L represents a divalent linking group, and when two or more L is present, L may be the same or different.
  • A represents a cyclic organic group.
  • x represents an integer of 1 to 20
  • y represents an integer of 0 to 10
  • z represents an integer of 0 to 10.
  • the alkyl group in the alkyl group substituted by a fluorine atom of Xf preferably has 1 to 10 carbon atoms, and more preferably 1 to 4 carbon atoms.
  • Preferred as Xf is a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms.
  • Xf include fluorine atom, CF 3 , C 2 F 5 , C 3 F 7 , C 4 F 9 , CH 2 CF 3 , CH 2 CH 2 CF 3 , CH 2 C 2 F 5 , and CH 2 CH 2 C 2 F 5 , CH 2 C 3 F 7 , CH 2 CH 2 C 3 F 7 , CH 2 C 4 F 9 , CH 2 CH 2 C 4 F 9 are mentioned, and among them, a fluorine atom, CF 3 is preferable. In particular, it is preferable that both Xf be a fluorine atom.
  • the alkyl group of R 1 and R 2 may have a substituent (preferably a fluorine atom) and preferably has 1 to 4 carbon atoms. More preferably, it is a C 1-4 perfluoroalkyl group.
  • Each of R 1 and R 2 is preferably a fluorine atom or CF 3 .
  • X is preferably 1 to 10, more preferably 1 to 5.
  • y is preferably 0 to 4, more preferably 0.
  • z is preferably 0 to 5, and more preferably 0 to 3.
  • the divalent linking group for L is not particularly limited, and -COO-, -OCO-, -CO-, -O-, -S-, -SO-, -SO 2- , an alkylene group, a cycloalkylene group, Examples thereof include an alkenylene group and a linking group in which a plurality of these are linked, and a linking group having 12 or less carbon atoms in total is preferred.
  • -COO-, -OCO-, -CO- and -O- are preferable, and -COO- and -OCO- are more preferable.
  • the cyclic organic group for A is not particularly limited as long as it is a group having a cyclic structure, and an aliphatic ring, an aromatic hydrocarbon ring, a heterocyclic ring (not only one having aromaticity but also aromaticity) And the like.
  • the aliphatic ring may be monocyclic or polycyclic, and may be monocyclic cycloalkyl ring such as cyclopentyl ring, cyclohexyl ring, cyclooctyl ring, norbornyl ring, tricyclodecanyl ring, tetracyclodecanyl ring, tetracyclododeca ring Polycyclic cycloalkyl rings such as nyl ring and adamantyl ring are preferred.
  • the aromatic hydrocarbon ring include benzene ring, naphthalene ring, phenanthrene ring, anthracene ring and the like.
  • heterocyclic ring examples include furan ring, thiophene ring, benzofuran ring, benzothiophene ring, dibenzofuran ring, dibenzothiophene ring, pyridine ring, piperidine ring, decahydroisoquinoline ring, lactone ring and the like.
  • the above-mentioned cyclic organic group may have a substituent, and as the substituent, an alkyl group (which may be linear, branched or cyclic, preferably having 1 to 12 carbon atoms), cycloalkyl Group (which may be any of monocyclic, polycyclic or spiro ring, preferably having 3 to 20 carbon atoms), aryl group (preferably having 6 to 14 carbon atoms), hydroxy group, alkoxy group, ester group, amide group And urethane groups, ureido groups, thioether groups, sulfonamide groups, sulfonic acid ester groups and the like.
  • the carbon constituting the cyclic organic group (carbon contributing to ring formation) may be carbonyl carbon.
  • Each of R 204 to R 207 independently represents an aryl group, an alkyl group or a cycloalkyl group.
  • the aryl group, alkyl group and cycloalkyl group of R 204 to R 207 are the same as the aryl group, alkyl group and cycloalkyl group of R 201 to R 203 in the compound (ZI) described above.
  • the aryl group, alkyl group and cycloalkyl group of R 204 to R 207 may have a substituent. As this substituent, there may be mentioned those which the aryl group, alkyl group and cycloalkyl group of R 201 to R 203 in the above-mentioned compound (ZI) may have.
  • Z in formula (ZI) - - Equation (ZII) Represents a non-nucleophilic anion, Z in formula (ZI) - - Equation (ZII), Z in (ZIII) can be the same as the non-nucleophilic anion.
  • the photoacid generator is an acid (volume 130 ⁇ 3 or more in size) by irradiation with an electron beam or extreme ultraviolet light from the viewpoint of suppressing the diffusion of the acid generated upon exposure to the non-exposed part and improving the resolution.
  • the volume is more preferably 190 ⁇ 3 or more the size of the acid (more preferably a compound capable of generating a sulfonic acid), volume 270 ⁇ 3 or more dimensions more preferably the acid (more preferably sulfonic acid) is a compound that generates, it is particularly preferable (more preferably sulfonic acid) acid volume 400 ⁇ 3 or more in size is a compound that generates.
  • the volume is more preferably preferably at 2000 ⁇ 3 or less, and 1500 ⁇ 3 or less.
  • the value of the above volume was determined using "WinMOPAC" manufactured by Fujitsu Limited. That is, first, the chemical structure of the acid according to each example is input, and then, the most stable conformation of each acid is determined by molecular force field calculation using the MM3 method with this structure as an initial structure, and then The "accessible volume" of each acid can be calculated by performing molecular orbital calculation using the PM3 method for these most stable conformations.
  • 1 ⁇ is 1 ⁇ 10 ⁇ 10 m.
  • the photoacid generators can be used alone or in combination of two or more.
  • the content of the photoacid generator is preferably 0.1 to 30% by mass, more preferably 0.5 to 25% by mass, and still more preferably 3 to 20% by mass with respect to the total solid content of the resist composition. %, Particularly preferably 3 to 15% by mass.
  • the resist composition preferably contains a solvent.
  • the solvent preferably contains a solvent satisfying the following conditions (a) to (c) (also referred to as “solvent (S)").
  • the A represents the viscosity (mPa ⁇ s) of the solvent (S), and the B represents the boiling point (° C.) of the solvent (S).
  • said solvent (S) consists only of 1 type of solvent
  • said A represents the viscosity (mPa * s) of the said solvent
  • said B represents the boiling point (degreeC) of the said solvent.
  • said solvent (S) is a mixed solvent which consists of 2 types of solvents
  • said A is calculated by a following formula (a1)
  • said B is calculated by a following formula (b1).
  • A ⁇ 1 ⁇ X1 * ⁇ 2 ⁇ X2 (a1)
  • B T1 * X1 + T2 * X2 (b1)
  • ⁇ 1 represents the viscosity (mPa ⁇ s) of the first type solvent
  • T1 represents the boiling point (° C.) of the first type solvent
  • X1 represents the mass ratio of the first type solvent to the total mass of the mixed solvent
  • ⁇ 2 represents the viscosity (mPa ⁇ s) of the second type solvent
  • T2 represents the boiling point (° C.) of the second type solvent
  • X2 represents the mass ratio of the second type solvent to the total mass of the mixed solvent.
  • said solvent (S) is a mixed solvent which consists of n types of solvent
  • said A is computed by a following formula (a2)
  • said B is computed by a following formula (b2).
  • A ⁇ 1 ⁇ X 1 * ⁇ 2 ⁇ X 2 * ... ⁇ n ⁇ X n (a 2)
  • B T1 * X1 + T2 * X2 +... Tn * Xn (b2)
  • ⁇ 1 represents the viscosity (mPa ⁇ s) of the first type solvent
  • T1 represents the boiling point (° C.) of the first type solvent
  • X1 represents the mass ratio of the first type solvent to the total mass of the mixed solvent.
  • ⁇ 2 represents the viscosity (mPa ⁇ s) of the second type solvent
  • T2 represents the boiling point (° C.) of the second type solvent
  • X2 represents the mass ratio of the second type solvent to the total mass of the mixed solvent
  • ⁇ n represents the viscosity (mPa ⁇ s) of the n-th solvent
  • T n represents the boiling point (° C.) of the n-th solvent
  • X n represents the mass ratio of the n-th solvent to the total mass of the mixed solvent.
  • n represents an integer of 3 or more.
  • the viscosity A (mPa ⁇ s) is a value at normal temperature and pressure (25 ° C./1 atm). One atm is 1.013 ⁇ 10 5 Pa. Further, the boiling point B (° C.) is a value at normal pressure (1 atm), and in the case of using two or more mixed solvents, the effect of the boiling point fluctuation due to azeotropy is not taken into account, Only).
  • the viscosity A (mPa ⁇ s) of the solvent (S) preferably satisfies the following condition (b ′), and more preferably the following condition (b ′ ′).
  • the boiling point B (° C.) of the solvent (S) preferably satisfies the following condition (c ′), and more preferably the following condition (c ′ ′).
  • the solvent (S) is not particularly limited as long as the above conditions (a) to (c) are satisfied, and examples thereof include lactone solvents, ketone solvents, ester solvents, alcohol solvents, ether solvents, And aromatic organic solvents.
  • the solvent (S) may be a single solvent or a mixed solvent of two or more solvents.
  • lactone solvents examples include ⁇ -butyrolactone (GBL) and the like.
  • ketone solvents include acetone, methyl ethyl ketone, cyclohexanone (CyHx), methyl-n-amyl ketone, methyl isoamyl ketone, 2-heptanone (MAK) and the like.
  • ester solvents methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate (nBA), methyl pyruvate, ethyl pyruvate, methyl methoxypropionate (MMP), ethyl ethoxypropionate (EEP) Etc.
  • monomethyl ethers such as ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol monoacetate, 3-methoxybutyl acetate, etc.
  • monoalkyl ethers such as monoethyl ether, monopropyl ether, monobutyl ether ⁇ e.g. , Propylene glycol monomethyl ether acetate (PGMEA), etc. ⁇ , or monophenyl ether.
  • alcohol solvents examples include monohydric alcohols such as 4-methyl-2-pentanol (MIBC), benzyl alcohol and 3-methoxybutanol, and polyhydric alcohols such as ethylene glycol, diethylene glycol, propylene glycol and dipropylene glycol.
  • monoalkyl ethers such as monomethyl ether, monoethyl ether, monopropyl ether and monobutyl ether of the above polyhydric alcohols ⁇ eg, propylene glycol monomethyl ether (PGME) etc. ⁇ or monophenyl ether can be mentioned.
  • ether-based solvent examples include cyclic ethers such as dioxane, and solvents containing an ether bond among the solvents described in the above-mentioned ester-based solvents and alcohol-based solvents.
  • aromatic organic solvents include anisole, ethyl benzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenetole, butylphenyl ether, ethylbenzene, diethylbenzene, amylbenzene, isopropylbenzene, toluene, xylene, cymene, mesitylene, etc. It can be mentioned.
  • the solvent (S) preferably contains at least one of an ether solvent, an ester solvent, and a ketone solvent, and is preferably propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, ethyl lactate or ethoxy propionate. It is more preferable to include at least one of ethyl, cyclohexanone and methyl methoxypropionate, and it is further preferable to include at least one of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether.
  • the mixing ratio of each solvent is A calculated by the above formulas (a1) and (a2) and B calculated by the above formulas (b1) and (b2) above. It is preferable to adjust so as to satisfy the conditions (a) to (c).
  • the content of the solvent in the resist composition is preferably 40 to 70% by mass, more preferably 45 to 70% by mass, and 55 to 70% by mass with respect to the total mass of the resist composition. Is more preferred.
  • the resist composition preferably contains an acid diffusion control agent.
  • the acid diffusion control agent traps an acid generated from an acid generator or the like at the time of exposure, and acts as a quencher which suppresses the reaction of the acid decomposable resin in the unexposed area by the extra generated acid.
  • the acid diffusion control agent a basic compound, a low molecular weight compound having a nitrogen atom and having a group capable of leaving by the action of an acid, a basic compound whose basicity decreases or disappears upon irradiation with actinic rays or radiation, or It is possible to use an onium salt which is relatively weak to the acid generator.
  • R 200 , R 201 and R 202 may be the same or different, and a hydrogen atom, an alkyl group (preferably having a carbon number of 1 to 20), a cycloalkyl group (preferably having a carbon number of And 3 to 20) or an aryl group (having 6 to 20 carbon atoms), wherein R 201 and R 202 may bond to each other to form a ring.
  • R 203 , R 204 , R 205 and R 206 which may be the same or different, each represent an alkyl group having 1 to 20 carbon atoms.
  • alkyl group having a substituent As the alkyl group having a substituent, as the alkyl group having a substituent, an aminoalkyl group having 1 to 20 carbon atoms, a hydroxyalkyl group having 1 to 20 carbon atoms, or a cyanoalkyl group having 1 to 20 carbon atoms is preferable.
  • the alkyl group in these general formulas (A) and (E) is more preferably unsubstituted.
  • Preferred compounds include guanidine, aminopyrrolidine, pyrazole, pyrazoline, piperazine, aminomorpholine, aminoalkyl morpholine, piperidine and the like, and more preferred compounds include imidazole structure, diazabicyclo structure, onium hydroxide structure, onium carboxylate Examples thereof include a compound having a structure, a trialkylamine structure, an aniline structure or a pyridine structure, an alkylamine derivative having a hydroxyl group and / or an ether bond, and an aniline derivative having a hydroxyl group and / or an ether bond.
  • the compound illustrated by Paragraph No. 0379 of US2012 / 0219913 gazette can be mentioned.
  • an amine compound having a phenoxy group an ammonium salt compound having a phenoxy group, an amine compound having a sulfonic acid ester group, and an ammonium salt compound having a sulfonic acid ester group can be preferably used.
  • an amine compound having a phenoxy group an ammonium salt compound having a phenoxy group, an amine compound having a sulfonic acid ester group, and an ammonium salt compound having a sulfonic acid ester group can be preferably used.
  • paragraph Nos. 0307 to 0311 of International Publication WO2016 / 104565 the contents of which are incorporated herein.
  • the content of the basic compound is preferably 0.001 to 10% by mass, and preferably 0.01 to 5% by mass, based on the total solid content of the resist composition. It is more preferable that
  • the above molar ratio is preferably 2.5 or more from the viewpoint of sensitivity and resolution, and is preferably 300 or less from the viewpoint of suppression of reduction in resolution due to thickening of the resist pattern due to aging after exposure and heat treatment.
  • the above molar ratio is more preferably 5.0 to 200, and still more preferably 7.0 to 150.
  • a low molecular weight compound having a nitrogen atom and having a group capable of leaving by the action of an acid is an amine having a group leaving on the nitrogen atom by the action of an acid. It is preferably a derivative.
  • a group leaving by the action of an acid an acetal group, a carbonate group, a carbamate group, a tertiary ester group, a tertiary hydroxyl group and a hemiaminal ether group are preferable, and a carbamate group and a hemiaminal ether group are particularly preferable.
  • the molecular weight of the compound (D-1) is preferably 100 to 1000, more preferably 100 to 700, and particularly preferably 100 to 500.
  • the compound (D-1) may have a carbamate group having a protecting group on the nitrogen atom.
  • the protective group constituting the carbamate group can be represented by the following formula (d-1).
  • each Rb independently represents a hydrogen atom, an alkyl group (preferably having a carbon number of 1 to 10), a cycloalkyl group (preferably having a carbon number of 3 to 30), and an aryl group (preferably having a carbon number of 3 to 30), an aralkyl group (preferably having a carbon number of 1 to 10), or an alkoxyalkyl group (preferably having a carbon number of 1 to 10).
  • R b may be linked to each other to form a ring.
  • the alkyl group, cycloalkyl group, aryl group and aralkyl group represented by R b are substituted with a functional group such as hydroxy group, cyano group, amino group, pyrrolidino group, piperidino group, morpholino group, oxo group, alkoxy group, halogen atom It may be The same applies to the alkoxyalkyl group represented by Rb.
  • Rb is preferably a linear or branched alkyl group, a cycloalkyl group or an aryl group. More preferably, it is a linear or branched alkyl group or a cycloalkyl group.
  • the compound (D-1) is preferably a compound having a structure represented by the following formula (6).
  • Ra represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group.
  • l 2
  • two Ras may be the same or different, and two Ras may be mutually linked to form a heterocyclic ring with the nitrogen atom in the formula.
  • the hetero ring may contain a hetero atom other than the nitrogen atom in the formula.
  • Rb has the same meaning as Rb in formula (d-1) above, and so are the preferable examples.
  • l represents an integer of 0 to 2
  • m represents an integer of 1 to 3
  • l + m 3 is satisfied.
  • the alkyl group, cycloalkyl group, aryl group and aralkyl group as Ra are the groups described above as the alkyl, cycloalkyl group, aryl group and aralkyl group as Rb may be substituted It may be substituted by the same group as
  • compound (D-1) include the compounds described in paragraph 0475 of US2012 / 0135348, the contents of which are incorporated herein.
  • the compound represented by the formula (6) can be synthesized based on JP-A-2007-298569, JP-A-2009-199021, and the like.
  • the content of the compound (D-1) is preferably 0.001 to 20% by mass with respect to the total solid content of the resist composition, 0
  • the content is more preferably in the range of .001 to 10% by mass, and further preferably in the range of 0.01 to 5% by mass.
  • compound (PA) As a basic compound (hereinafter also referred to as “compound (PA)”) whose basicity is reduced or eliminated by irradiation with actinic rays or radiation, it has a proton acceptor functional group, and can be selected from actinic rays or radiation.
  • the compound which is decomposed by irradiation and whose proton acceptor property decreases, disappears, or changes from proton acceptor property to acidity can be mentioned.
  • the proton acceptor functional group is a functional group capable of electrostatically interacting with a proton or a functional group having an electron, for example, a functional group having a macrocyclic structure such as cyclic polyether, or ⁇ -conjugated It means a functional group having a nitrogen atom having a non-covalent electron pair that does not contribute.
  • the nitrogen atom having a noncovalent electron pair not contributing to the ⁇ conjugation is, for example, a nitrogen atom having a partial structure shown in the following formula.
  • the compound (PA) is decomposed by irradiation with an actinic ray or radiation to reduce or eliminate the proton acceptor property, or generate a compound which has been changed from the proton acceptor property to the acidity.
  • the reduction, disappearance or change of the proton acceptor property from the proton acceptor property to the acidity is a change of the proton acceptor property caused by the addition of a proton to the proton acceptor functional group, specifically Means that when a proton adduct is formed from a compound (PA) having a proton acceptor functional group and a proton, the equilibrium constant in its chemical equilibrium decreases.
  • the proton acceptor property can be confirmed by performing pH measurement.
  • the compound (PA) can be referred to the description of paragraph Nos. 0312 to 0320 of International Publication WO 2016/104565, the contents of which are incorporated herein.
  • the content of the compound (PA) is preferably 0.1 to 10% by mass, and 1 to 8% by mass with respect to the total solid content of the resist composition. It is more preferable that As the compound (PA), one type may be used alone, or two or more types may be used in combination.
  • an onium salt which is relatively weak to the photoacid generator can be used as an acid diffusion controller.
  • a photoacid generator and an onium salt that generates an acid that is a relatively weak acid (preferably a weak acid with a pKa of more than -1) to the acid generated from the photoacid generator are used in combination, the actinic light
  • an acid generated from a photoacid generator collides with an onium salt having an unreacted weak acid anion due to irradiation with radiation or radiation
  • a weak acid is released by salt exchange to form an onium salt having a strong acid anion.
  • the strong acid is exchanged to a weak acid having a lower catalytic ability, the acid is apparently inactivated to control the acid diffusion.
  • paragraphs 0012 to 0013 of 2012-189977 and paragraphs 0029 to 0031 in JP 2012-252124 can be referred to, and the contents thereof are incorporated in the present specification.
  • the content is 0.5 to 10.0% by mass with respect to the total solid content of the resist composition.
  • the content is preferably 0.5 to 8.0% by mass, and more preferably 1.0 to 8.0% by mass.
  • the resist composition may further contain a surfactant.
  • a surfactant any one or two or more of a fluorine-based and / or silicon-based surfactant (a fluorine-based surfactant, a silicon-based surfactant, a surfactant having both a fluorine atom and a silicon atom), or It is more preferable to contain
  • fluorine-based and / or silicon-based surfactants include the surfactants described in ⁇ 0276> of US Patent Application Publication No. 2008/0248425, such as EF-TOP EF301 and EF303 (Nihin Akita Kasei Co., Ltd.) Florard FC 430, 431, 4430 (manufactured by Sumitomo 3M Limited), Megafac F 171, F 173, F 176, F 189, F 113, F 110, F 177, F 120, R 08 (manufactured by DIC Corporation), Surfron S-382, SC101, 102, 103, 104, 105, 106, KH-20 (manufactured by Asahi Glass Co., Ltd.), Troysol S-366 (manufactured by Troy Chemical Co., Ltd.), GF-300, GF-150 (manufactured by Toagosei Co., Ltd.) ), Surfron S-393 (manufactured by Se
  • telomer method also referred to as telomer method
  • oligomerization method also referred to as an oligomer method
  • a surfactant using a polymer having a fluoroaliphatic group can be used.
  • the fluoroaliphatic compound can be synthesized by the method described in JP-A-2002-90991.
  • Megafac F178, F-470, F-473, F-475, F-476, F-472 manufactured by DIC Corporation
  • acrylate (or methacrylate) having a C 6 F 13 group Copolymers of (poly (oxyalkylene)) acrylates (or methacrylates), acrylates (or methacrylates) with C 3 F 7 groups and (poly (oxyethylene)) acrylates (or methacrylates) and Examples thereof include copolymers with propylene)) acrylate (or methacrylate).
  • surfactants may be used alone or in combination of two or more.
  • the content of the surfactant is preferably 0.0001 to 2% by mass, more preferably 0.0005 to 1% by mass with respect to the solid content of the resist composition. It is.
  • the resist composition further promotes the solubility in a carboxylic acid onium salt, an acid multiplying agent, a dye, a plasticizer, a photosensitizer, a light absorber, an alkali soluble resin, a dissolution inhibitor and a developer, as needed
  • a compound for example, a phenol compound having a molecular weight of 1000 or less, an alicyclic or aliphatic compound having a carboxyl group
  • a compound for example, a phenol compound having a molecular weight of 1000 or less, an alicyclic or aliphatic compound having a carboxyl group
  • the composition for forming a pixel is a composition for forming a pixel of an optical filter used in a device.
  • the composition for forming a pixel include a composition for forming a colored pixel, a composition for forming a pixel of an infrared ray transmitting layer, a composition for forming a pixel for an infrared ray cut layer, and the like. It is preferable that it is at least 1 sort (s) chosen from the composition for pixel formation of a layer.
  • the composition for forming colored pixels is also referred to as a composition for a color filter.
  • composition for pixel formation of an infrared rays permeable layer is also called composition for infrared rays permeable filters.
  • composition for pixel formation of an infrared cut layer is also called composition for infrared cut filters.
  • the infrared cut filter composition has a maximum absorption wavelength in the wavelength range of 700 to 1300 nm, and the ratio of the maximum value A 1 of absorbance in the wavelength range of 400 to 600 nm to the absorbance A 2 at the above maximum absorption wavelength it is preferable a 1 / a 2 is a composition having a spectral characteristic is 0.3 or less is. By using a composition having such a spectral characteristic, it is possible to form a pixel which is excellent in visible transparency and excellent in infrared shielding properties.
  • the composition for a color filter is preferably a composition for forming a colored pixel selected from, for example, a red pixel, a blue pixel, a green pixel, a cyan pixel, a magenta pixel and a yellow pixel.
  • the infrared ray transmission filter composition has a spectral characteristic such that Amin / Bmax, which is a ratio of the minimum absorbance Amin in the wavelength range of 400 to 640 nm to the maximum absorbance Bmax in the range of wavelength 1100 to 1300 nm, is 5 or more. It is preferable that it is a composition which has Amin / Bmax is more preferably 7.5 or more, still more preferably 15 or more, and particularly preferably 30 or more.
  • the absorbance A ⁇ at a certain wavelength ⁇ is defined by the following equation (1).
  • a ⁇ -log (T ⁇ / 100) (1)
  • a ⁇ is the absorbance at wavelength ⁇
  • T ⁇ is the transmittance (%) at wavelength ⁇ .
  • the value of absorbance may be a value measured in the state of a solution, or may be a value of a film formed by using a composition for an infrared transmission filter.
  • the composition for infrared transmission filter is applied on a glass substrate by a method such as spin coating so that the thickness of the film after drying becomes a predetermined thickness, and a hot plate is It is preferable to measure using a membrane prepared by drying at 100 ° C. for 120 seconds.
  • the thickness of the film can be measured on a substrate having a film using a stylus profilometer (DEKTAK150 manufactured by ULVAC, Inc.).
  • the absorbance can be measured using a conventionally known spectrophotometer.
  • the measurement conditions of the absorbance are not particularly limited, under the conditions adjusted so that the minimum value A of the absorbance in the wavelength range of 400 to 640 nm is 0.1 to 3.0, the absorbance in the wavelength range of 1100 to 1300 nm It is preferable to measure the maximum value B. The measurement error can be further reduced by measuring the absorbance under such conditions.
  • the method of adjusting the minimum value A of the absorbance in the wavelength range of 400 to 640 nm to be 0.1 to 3.0 is not particularly limited. For example, in the case of measuring the absorbance in the state of a solution, there is a method of adjusting the optical path length of the sample cell. Moreover, when measuring a light absorbency in the state of a film
  • the composition for an infrared transmission filter satisfies any of the following spectral characteristics (1) to (4).
  • Amin2 / Bmax2 which is the ratio of the minimum value Amin2 of absorbance in the wavelength range of 400 to 750 nm to the maximum value Bmax2 of absorbance in the range of wavelength 900 to 1300 nm, is 5 or more and 7.5 or more Is preferably 15 or more, more preferably 30 or more. According to this aspect, it is possible to form a film capable of transmitting an infrared ray having a wavelength of 850 nm by shielding light having a wavelength of 400 to 750 nm.
  • Amin3 / Bmax3 which is the ratio of the minimum value Amin3 of absorbance in the wavelength range of 400 to 850 nm to the maximum value Bmax3 of absorbance in the range of wavelength 1000 to 1300 nm, is 5 or more and 7.5 or more Is preferably 15 or more, more preferably 30 or more. According to this aspect, it is possible to block light having a wavelength of 400 to 830 nm to form a film capable of transmitting infrared light having a wavelength of 940 nm.
  • Amin4 / Bmax4 which is the ratio of the minimum value Amin4 of absorbance in the wavelength range of 400 to 950 nm to the maximum value Bmax4 of absorbance in the range of wavelength 1100 to 1300 nm, is 5 or more and 7.5 or more Is preferably 15 or more, more preferably 30 or more. According to this aspect, it is possible to form a film capable of transmitting an infrared ray having a wavelength of 1040 nm by shielding light having a wavelength of 400 to 950 nm.
  • the maximum value of light transmittance in the film thickness direction is in the wavelength range of 400 to 640 nm. It is preferable that the spectral characteristics be 20% or less and 70% or more of the minimum value of the light transmittance in the thickness direction of the film in the wavelength range of 1100 to 1300 nm.
  • the maximum value in the wavelength range of 400 to 640 nm is preferably 15% or less, more preferably 10% or less.
  • the minimum value in the wavelength range of 1100 to 1300 nm is preferably 75% or more, and more preferably 80% or more.
  • the composition for an infrared transmission filter satisfies the spectral characteristics of any one of the following (11) to (14).
  • the light transmittance in the film thickness direction in the wavelength range of 400 to 750 nm The maximum value is 20% or less (preferably 15% or less, more preferably 10% or less), and the minimum value of light transmittance in the thickness direction of the film in the wavelength range of 900 to 1300 nm is 70% or more (preferably) The aspect which is 75% or more, More preferably, it is 80% or more.
  • the light transmittance in the film thickness direction in the wavelength range of 400 to 830 nm The maximum value is 20% or less (preferably 15% or less, more preferably 10% or less), and the minimum value of the light transmittance in the thickness direction of the film in the wavelength range of 1000 to 1300 nm is 70% or more (preferably) The aspect which is 75% or more, More preferably, it is 80% or more.
  • the light transmittance in the film thickness direction in the wavelength range of 400 to 950 nm The maximum value is 20% or less (preferably 15% or less, more preferably 10% or less), and the minimum value of light transmittance in the thickness direction of the film in the wavelength range of 1100 to 1300 nm is 70% or more (preferably) The aspect which is 75% or more, More preferably, it is 80% or more.
  • composition for pixel formation used by this invention contains a polymeric compound and a photoinitiator.
  • the photopolymerization initiator is preferably a photoradical polymerization initiator.
  • the photopolymerization initiator preferably contains at least one compound selected from alkylphenone compounds, acyl phosphine compounds, benzophenone compounds, thioxanthone compounds, triazine compounds and oxime compounds, and more preferably contains an oxime compound.
  • alkyl phenone compound examples include benzyl dimethyl ketal compound, ⁇ -hydroxy ketone compound, and ⁇ -amino ketone compound.
  • Examples of the benzyl dimethyl ketal compound include 2,2-dimethoxy-2-phenylacetophenone and the like.
  • Examples of commercially available products include IRGACURE-651 (manufactured by BASF).
  • Examples of the ⁇ -hydroxyalkylphenone compound include compounds represented by the following formula (V-1).
  • Formula (V-1) In the formula, Rv 1 represents a substituent, Rv 2 and Rv 3 each independently represent a hydrogen atom or a substituent, and Rv 2 and Rv 3 may combine with each other to form a ring.
  • M represents an integer of 0 to 4.
  • Examples of the substituent represented by Rv 1 include an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aralkyl group having 7 to 20 carbon atoms.
  • the alkyl group and the alkoxy group are preferably linear or branched, and more preferably linear.
  • the alkyl group, alkoxy group and aralkyl group represented by Rv 1 may be unsubstituted or may have a substituent.
  • a substituent a hydroxy group etc. are mentioned.
  • Rv 2 and Rv 3 each independently represent a hydrogen atom or a substituent.
  • substituent an alkyl group having 1 to 10 carbon atoms and an aryl group having 6 to 20 carbon atoms are preferable.
  • Rv 2 and Rv 3 may be bonded to each other to form a ring (preferably a ring having 4 to 8 carbon atoms, more preferably an aliphatic ring having 4 to 8 carbon atoms).
  • the alkyl group is preferably linear or branched, and more preferably linear.
  • ⁇ -hydroxyalkylphenone compound examples include 1-hydroxy-cyclohexyl-phenyl-ketone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, 1- [4- (2-hydroxyethoxy) ) -Phenyl] -2-hydroxy-2-methyl-1-propan-1-one, 2-hydroxy-1- ⁇ 4- [4- (2-hydroxy-2-methyl-propionyl) -benzyl] phenyl ⁇ - 2-methyl-propan-1-one and the like.
  • Examples of commercially available ⁇ -hydroxyalkylphenone compounds include IRGACURE-184, DAROCUR-1173, IRGACURE-500, IRGACURE-2959, IRGACURE-127 (manufactured by BASF Corporation) and the like.
  • Examples of the ⁇ -aminoalkylphenone compound include compounds represented by the following formula (V-2).
  • Ar represents a phenyl group substituted with -SR 13 or -N (R 7E ) (R 8E ), and R 13 represents a hydrogen atom or an alkyl group having 1 to 12 carbon atoms.
  • R 1D and R 2D each independently represent an alkyl group having 1 to 8 carbon atoms. R 1D and R 2D may combine with each other to form a ring.
  • the alkyl group represented by R 1D and R 2D may be linear, branched or cyclic, and is preferably linear or branched.
  • the alkyl group represented by R 1D and R 2D may be unsubstituted or may have a substituent.
  • an aryl group, a heterocyclic group, a nitro group, a cyano group, a halogen atom -OR Y1 , -SR Y1 , -COR Y1 , -COOR Y1 , -OCOR Y1 , -NR Y1 R Y2 , -NHCOR Y1 , -CONR Y1 R Y2 , -NHCONR Y1 R Y2 , -NHCOOR Y1 , -SO 2 R Y1 , -SO 2 OR Y1 , -NHSO 2 R Y1 and the like.
  • R Y1 and R Y2 each independently represent a hydrogen atom, an alkyl group, an aryl group or a heterocyclic group.
  • the halogen atom may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom.
  • the carbon number of the alkyl group represented by R Y1 and R Y2 is preferably 1 to 20.
  • the alkyl group may be linear, branched or cyclic, but is preferably linear or branched.
  • the number of carbon atoms of the aryl group as a substituent and the aryl group represented by R Y1 and R Y2 is preferably 6 to 20, more preferably 6 to 15, and still more preferably 6 to 10.
  • the aryl group may be a single ring or a fused ring.
  • the heterocyclic group represented by R Y1 and R Y2 is preferably a 5- or 6-membered ring.
  • the heterocyclic group may be a single ring or a fused ring.
  • the number of carbon atoms constituting the heterocyclic group is preferably 3 to 30, more preferably 3 to 18, and still more preferably 3 to 12.
  • the number of hetero atoms constituting the heterocyclic group is preferably 1 to 3.
  • the hetero atom constituting the heterocyclic group is preferably a nitrogen atom, an oxygen atom or a sulfur atom.
  • R 3D and R 4D each independently represent a hydrogen atom or an alkyl group having 1 to 12 carbon atoms.
  • R 3D and R 4D may be bonded to each other to form a ring.
  • R 3D and R 4D combine to form a ring, they may be directly linked to form a ring, or they may combine via -CO-, -O- or -NH- to form a ring
  • R 7E and R 8E each independently represent a hydrogen atom or an alkyl group having 1 to 12 carbon atoms.
  • R 7E and R 8E may be bonded to each other to form a ring.
  • R 7E and R 8E When R 7E and R 8E are combined to form a ring, both may be directly linked to form a ring, or they may be combined via -CO-, -O- or -NH- to form a ring You may For example, a ring formed by R 7E and R 8E via -O- includes a morpholine ring and the like.
  • ⁇ -aminoalkylphenone compound examples include 2-methyl-1- (4-methylthiophenyl) -2-morpholinopropan-1-one and 2-benzyl-2-dimethylamino-1- (4-morpholine).
  • Linophenyl) -1-butanone, 2-dimethylamino-2-[(4-methylphenyl) methyl] -1- [4- (4-morpholinyl) phenyl] -1-butanone and the like can be mentioned.
  • Examples of commercially available ⁇ -aminoalkylphenone compounds include IRGACURE-907, IRGACURE-369, and IRGACURE-379 (manufactured by BASF Corporation).
  • acyl phosphine compound examples include 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide and bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide.
  • Commercially available products of the acyl phosphine compounds include IRGACURE-819, IRGACURE-TPO (manufactured by BASF Corp.) and the like.
  • benzophenone compounds include benzophenone, methyl o-benzoylbenzoate, 4-phenylbenzophenone, 4-benzoyl-4'-methyldiphenyl sulfide, 3,3 ', 4,4'-tetra (t-butylperoxycarbonyl) benzophenone , 2,4,6-trimethylbenzophenone and the like.
  • thioxanthone compound 2-isopropyl thioxanthone, 4-isopropyl thioxanthone, 2,4-diethyl thioxanthone, 2,4-dichloro thioxanthone, 1-chloro-4-propoxy thioxanthone and the like can be mentioned.
  • triazine compounds examples include 2,4-bis (trichloromethyl) -6- (4-methoxyphenyl) -1,3,5-triazine and 2,4-bis (trichloromethyl) -6- (4-methoxynaphthyl).
  • the description in paragraphs 0212 to 0236 of International Publication WO 2016/190162 can be referred to, and the contents thereof are incorporated herein.
  • the oxime compound a compound described in JP-A-2001-233842, a compound described in JP-A-2000-80068, a compound described in JP-A-2006-342166, JP-A-2016-21012 The compounds described in and the like can be used.
  • J.J. C. S. Perkin II (1979, pp. 1653-1660) J. Am. C.
  • IRGACURE-OXE01, IRGACURE-OXE02, IRGACURE-OXE03, IRGACURE-OXE04 (above, made by BASF Corporation), TR-PBG-304 (made by Changzhou strong electronic new material Co., Ltd.), Adeka Optomer N-1919 (Photopolymerization initiator 2 described in JP-A-2012-14052, manufactured by ADEKA Co., Ltd.).
  • the oxime compound it is also preferable to use a compound having no coloring property, or a compound having high transparency and which is difficult to discolor other components. Examples of commercially available products include Adeka ARKules NCI-730, NCI-831, NCI-930 (all manufactured by ADEKA Corporation).
  • an oxime compound having a fluorene ring can also be used as a photopolymerization initiator.
  • the oxime compound having a fluorene ring compounds described in JP-A-2014-137466 can be mentioned. This content is incorporated herein.
  • an oxime compound having a fluorine atom can also be used as a photopolymerization initiator.
  • Specific examples of the oxime compound having a fluorine atom include the compounds described in JP-A-2010-262028, the compounds 24 and 36 to 40 described in JP-A-2014-500852, and JP-A-2013-164471. And the like (C-3) and the like. This content is incorporated herein.
  • an oxime compound having a nitro group can be used as a photopolymerization initiator.
  • the oxime compound having a nitro group is also preferably a dimer.
  • specific examples of the oxime compound having a nitro group compounds described in paragraphs 0031 to 0047 of JP2013-114249A and paragraphs 0008 to 0012 and 0070 to 0079 of JP2014-137466A, The compounds described in Paragraph Nos. 0007 to 0025 of Patent No. 4223071, Adeka ARKLS NCI-831 (manufactured by ADEKA Co., Ltd.) can be mentioned.
  • an oxime compound having a benzofuran skeleton can also be used as a photopolymerization initiator.
  • Specific examples include OE-01 to OE-75 described in International Publication WO 2015/036910.
  • oxime compounds preferably used in the present invention are shown below, but the present invention is not limited thereto.
  • the content of the photopolymerization initiator is preferably 0.1 to 30% by mass with respect to the total solid content of the composition for forming a pixel.
  • the lower limit is, for example, more preferably 0.5% by mass or more, and further preferably 1% by mass or more.
  • the upper limit is, for example, more preferably 25% by mass or less, and still more preferably 20% by mass or less.
  • the photopolymerization initiator may be used alone or in combination of two or more. When two or more photopolymerization initiators are used in combination, the total amount is preferably in the above range.
  • Examples of the polymerizable compound include compounds having a group having an ethylenically unsaturated bond, and the like, and a compound having two or more groups having an ethylenically unsaturated bond is preferable, and a group having an ethylenically unsaturated bond It is more preferable that it is a compound which has three or more.
  • the upper limit of the number of groups having an ethylenically unsaturated bond is, for example, preferably 15 or less, more preferably 6 or less.
  • a (meth) acryloyl group is preferable.
  • the polymerizable compound is preferably a 3 to 15 functional (meth) acrylate compound, and more preferably a 3 to 6 functional (meth) acrylate compound.
  • a polymeric compound is a radically polymerizable compound.
  • the polymerizable compound may be in the form of a monomer or a polymer, but a monomer is preferred.
  • the molecular weight of the monomer type polymerizable compound is preferably 200 to 3,000. 2500 or less are preferable and, as for the upper limit of molecular weight, 2000 or less is still more preferable.
  • the lower limit of the molecular weight is preferably 250 or more, and more preferably 300 or more.
  • the description in Paragraph Nos. 0033 to 0034 of JP-A-2013-253224 can be referred to, and the contents thereof are incorporated in the present specification.
  • the polymerizable compound ethyleneoxy modified pentaerythritol tetraacrylate (as a commercial product, NK ester ATM-35E; Shin-Nakamura Chemical Co., Ltd. product), dipentaerythritol triacrylate (as a commercial product, KAYARAD D-330) Nippon Kayaku Co., Ltd. product, dipentaerythritol tetraacrylate (commercially available as KAYARAD D-320; Nippon Kayaku Co., Ltd.
  • dipentaerythritol penta (meth) acrylate commercially available as KAYARAD D -310; Nippon Kayaku Co., Ltd. product, dipentaerythritol hexa (meth) acrylate (as a commercial product, KAYARAD DPHA; Nippon Kayaku Co., Ltd. product, A-DPH-12E; Shin-Nakamura Chemical Co., Ltd.)
  • (meth) acryloyl groups thereof Compounds of structure attached via ethylene glycol residue and / or propylene glycol residues is preferred. These oligomer types can also be used.
  • diglycerin EO ethylene oxide modified (meth) acrylate
  • M-460 manufactured by Toagosei
  • pentaerythritol tetraacrylate manufactured by Shin-Nakamura Chemical Co., Ltd., A-TMMT
  • 1,6- Hexanediol diacrylate manufactured by Nippon Kayaku Co., Ltd., KAYARAD HDDA
  • RP-1040 manufactured by Nippon Kayaku Co., Ltd.
  • Alonics M-350 and TO-2349 can also be used as radically polymerizable compounds.
  • the polymerizable compound may be a compound having an acid group such as a carboxyl group, a sulfo group or a phosphoric acid group.
  • examples of the polymerizable compound having an acid group include esters of aliphatic polyhydroxy compounds and unsaturated carboxylic acids.
  • a polymerizable compound obtained by reacting a nonaromatic carboxylic acid anhydride with an unreacted hydroxy group of an aliphatic polyhydroxy compound to give an acid group is preferable, and in this ester, the aliphatic polyhydroxy compound is particularly preferably It is what is pentaerythritol and / or dipentaerythritol.
  • the acid value of the polymerizable compound having an acid group is preferably 0.1 to 40 mg KOH / g.
  • the lower limit is preferably 5 mg KOH / g or more.
  • the upper limit is preferably 30 mg KOH / g or less.
  • the polymerizable compound is a compound having a caprolactone structure.
  • the polymerizable compound having a caprolactone structure is not particularly limited as long as it has a caprolactone structure in the molecule, and examples thereof include trimethylolethane, ditrimethylolethane, trimethylolpropane, ditrimethylolpropane, pentaerythritol, and dipentacene.
  • An ⁇ -caprolactone modified polyfunctional (meth) acrylate obtainable by esterifying (meth) acrylic acid and ⁇ -caprolactone with a polyhydric alcohol such as erythritol, tripentaerythritol, glycerin, diglycerol, trimethylolmelamine etc. It can be mentioned.
  • a polyhydric alcohol such as erythritol, tripentaerythritol, glycerin, diglycerol, trimethylolmelamine etc.
  • the compound having a caprolactone structure is, for example, DPCA-20, DPCA-30, DPCA-60, DPCA-120, etc., which are commercially available from Nippon Kayaku Co., Ltd. as the KAYARAD DPCA series, ethyleneoxy chains manufactured by Sartomer, etc.
  • examples thereof include SR-494 which is a four-functional tetrafunctional acrylate, and TPA-330 which is a trifunctional acrylate which has three isobutylene oxy chains.
  • urethane acrylates described in JP-B-48-41708, JP-A-51-37193, JP-B-2-32293 and JP-B-2-16765, JP-B-48 The urethane compounds having an ethylene oxide-based skeleton described in JP-A-58-49860, JP-B-56-17654, JP-B-62-39417, and JP-B-62-39418 are also suitable.
  • use of addition polymerizable compounds having an amino structure or a sulfide structure in the molecule described in JP-A-63-277653, JP-A-63-260909, and JP-A-1-105238. Can.
  • 8UH-1006 and 8UH-1012 manufactured by Taisei Fine Chemical Co., Ltd.
  • the content of the polymerizable compound is preferably 0.1 to 40% by mass with respect to the total solid content of the composition for forming a pixel.
  • the lower limit is, for example, more preferably 0.5% by mass or more, and still more preferably 1% by mass or more.
  • the upper limit is, for example, more preferably 30% by mass or less, and still more preferably 20% by mass or less.
  • the polymerizable compounds may be used alone or in combination of two or more. When using 2 or more types of polymeric compounds together, it is preferable that the total amount of them becomes said range.
  • the composition for forming a pixel used in the present invention preferably contains a coloring material.
  • the content of the coloring material is preferably 10% by mass or more, more preferably 20% by mass or more, and still more preferably 30% by mass or more based on the total solid content of the composition for forming a pixel.
  • the content is more preferably 40% by mass or more, and particularly preferably 50% by mass or more.
  • the content of the coloring material is 40% by mass or more, it is easy to form a pixel having good spectral characteristics with a thin film.
  • 80 mass% or less is preferable, as for an upper limit, 75 mass% or less is more preferable, and 70 mass% or less is still more preferable.
  • coloring materials include chromatic coloring agents, black coloring agents, coloring materials (light shielding materials) for shielding visible light described later, and infrared absorbing dyes.
  • the composition for pixel formation is a composition for color filters
  • a chromatic coloring agent as a color material.
  • the content of the chromatic coloring agent is preferably 10% by mass or more, more preferably 20% by mass or more, based on the total solid content of the composition for forming a pixel. It is further preferable that it is mass% or more, It is still more preferable that it is 40 mass% or more, It is especially preferable that it is 50 mass% or more. 80 mass% or less is preferable, as for an upper limit, 75 mass% or less is more preferable, and 70 mass% or less is still more preferable.
  • a chromatic coloring agent means coloring agents other than a white coloring agent and a black coloring agent.
  • the composition for forming a pixel is a composition for an infrared transmission filter
  • a light shielding material as a color material
  • a light shielding material and an infrared absorbing dye in combination as a coloring material.
  • the infrared absorbing dye has a role of limiting the transmitted light (infrared) to a longer wavelength side.
  • the content of the light shielding material is preferably 10% by mass or more, more preferably 20% by mass or more, with respect to the total solid content of the composition for infrared transmission filter.
  • the composition for infrared transmission filter contains an infrared absorbing dye
  • the total amount of the infrared absorbing dye and the light shielding material is 10% by mass or more based on the total solid content of the composition for infrared transmission filter
  • the content is preferably 20% by mass or more, further preferably 30% by mass or more, still more preferably 40% by mass or more, and particularly preferably 50% by mass or more.
  • the content of the infrared absorbing dye in the total amount of the infrared absorbing dye and the light shielding material is preferably 5 to 40% by mass. 30 mass% or less is preferable, and, as for the upper limit, 25 mass% or less is more preferable. 10 mass% or more is preferable, and, as for a lower limit, 15 mass% or more is more preferable.
  • the composition for forming a pixel is a composition for an infrared cut filter
  • an infrared absorbing dye as a color material.
  • the content of the infrared absorbing dye is preferably 10% by mass or more, more preferably 20% by mass or more, and further preferably 30% by mass or more based on the total solid content of the composition for forming a pixel.
  • it is 40% by mass or more. 80 mass% or less is preferable, as for an upper limit, 75 mass% or less is more preferable, and 70 mass% or less is still more preferable.
  • the chromatic coloring agent may be a pigment or a dye. Preferably it is a pigment.
  • the pigment preferably has an average particle diameter (r) of 20 nm ⁇ r ⁇ 300 nm, more preferably 25 nm ⁇ r ⁇ 250 nm, and still more preferably 30 nm ⁇ r ⁇ 200 nm.
  • the "average particle size” as used herein means the average particle size of secondary particles in which primary particles of the pigment are collected.
  • the particle size distribution of secondary particles of the usable pigment (hereinafter, also simply referred to as “particle size distribution”) is 70% by mass or more of secondary particles included in the range of average particle size ⁇ 100 nm. Is preferable, and 80% by mass or more is more preferable.
  • the particle size distribution of the secondary particles can be measured using the scattering intensity distribution.
  • the pigment is preferably an organic pigment.
  • organic pigment include the following. Color Index (CI) Pigment Yellow 1,2,3,4,5,6,10,11,12,13,14,15,16,17,18,20,24,31,32,34, 35, 35: 1, 36, 36: 1, 37, 37: 1, 40, 42, 43, 35, 53, 60, 61, 62, 63, 65, 73, 74, 77, 81, 83, 86, 93, 94, 95, 97, 98, 100, 101, 104, 106, 108, 110, 113, 114, 115, 116, 117, 118, 119, 120, 123, 125, 126, 127, 128, 128, 129, 137, 138, 139, 147, 148, 150, 151, 152, 153, 154, 155, 156, 161, 162, 164, 166, 167, 168, 169, 170 171,172,173,174,175,176,
  • the dye is not particularly limited, and known dyes can be used.
  • the chemical structure includes pyrazole azo, anilinoazo, triarylmethane, anthraquinone, anthrapyridone, benzylidene, oxonol, pyrazolotriazole azo, pyridone azo, cyanine, phenothiazine, pyrrolopyrazole azomethine, Dyes such as xanthene dyes, phthalocyanine dyes, benzopyran dyes, indigo dyes, and pyromethene dyes can be used. In addition, multimers of these dyes may be used. Further, dyes described in JP-A-2015-028144 and JP-A-2015-34966 can also be used.
  • Black coloring agent As the black colorant, inorganic black colorants such as carbon black, metal oxynitrides (titanium black etc.), metal nitrides (titanium nitride etc.), bisbenzofuranone compounds, azomethine compounds, perylene compounds, azo compounds And organic black colorants.
  • organic black colorant bisbenzofuranone compounds and perylene compounds are preferable.
  • the bisbenzofuranone compounds include the compounds described in JP-A-2010-534726, JP-A-2012-515233, JP-A-2012-515234, etc.
  • Irgaphor Black manufactured by BASF Corp. It is available.
  • perylene compounds C.I. I.
  • the bisbenzofuranone compound is preferably a compound represented by the following formula and a mixture thereof.
  • R 1 and R 2 each independently represent a hydrogen atom or a substituent
  • R 3 and R 4 each independently represent a substituent
  • a and b each independently represent an integer of 0 to 4
  • a is 2 or more
  • plural R 3 s may be the same or different
  • plural R 3 s may combine to form a ring
  • b is 2 or more
  • the plurality of R 4 may be identical or different, and the plurality of R 4 may be combined to form a ring.
  • the substituent represented by R 1 to R 4 is a halogen atom, a cyano group, a nitro group, an alkyl group, an alkenyl group, an alkynyl group, an aralkyl group, an aryl group, a heteroaryl group, -OR 301 , -COR 302 , -COOR 303 , -OCOR 304 , -NR 305 R 306 , -NHCOR 307 , -CONR 308 R 309 , -NHCONR 310 R 311 , -NHCOOR 312 , -SR 313 , -SO 2 R 314 , -SO 2 OR 315 , -NHSO 2 R 316 or -SO 2 NR 317 R 318 is represented, and R 301 to R 318 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group or a heteroaryl group
  • the coloring material which shields visible light (hereinafter, also referred to as a light shielding material) be a coloring material which absorbs light in a wavelength range from purple to red.
  • the light blocking material is preferably a color material that blocks light in a wavelength range of 400 to 640 nm.
  • the light blocking material is preferably a color material that transmits light of a wavelength of 1100 to 1300 nm.
  • the light blocking material preferably satisfies at least one of the following requirements (1) and (2).
  • the organic black colorant is preferably a colorant having a maximum absorption wavelength in the range of 400 nm to 700 nm.
  • the light blocking material preferably has an A / B ratio of 4.5 or more, which is, for example, the ratio of the minimum value A of the absorbance in the wavelength range of 400 to 640 nm and the minimum value B of the absorbance in the range of wavelength 1100 to 1300 nm. .
  • the above characteristics may be satisfied by one kind of material, or may be satisfied by a combination of plural materials.
  • the organic type black coloring agent may satisfy
  • the above-mentioned spectral characteristics may be satisfied by a combination of an organic black colorant and a chromatic colorant.
  • the light shielding material preferably contains two or more selected from red colorants, blue colorants, yellow colorants, purple colorants and green colorants. That is, the light shielding material preferably forms a black color by a combination of two or more types of colorants selected from red colorants, blue colorants, yellow colorants, purple colorants and green colorants. Examples of preferable combinations include the following. (1) An embodiment containing a red colorant and a blue colorant. (2) An embodiment containing a red colorant, a blue colorant and a yellow colorant. (3) An embodiment containing a red coloring agent, a blue coloring agent, a yellow coloring agent and a purple coloring agent.
  • An embodiment containing a red coloring agent, a blue coloring agent, a yellow coloring agent, a purple coloring agent and a green coloring agent An embodiment containing a red colorant, a blue colorant, a yellow colorant and a green colorant. (6) An embodiment containing a red colorant, a blue colorant and a green colorant. (7) An embodiment containing a yellow colorant and a purple colorant.
  • the mass ratio of red colorant, blue colorant, yellow colorant, purple colorant and green colorant is red colorant: blue colorant: yellow colorant: purple colorant: green colorant
  • the agent is 10 to 80: 20 to 80: 5 to 40: 5 to 40, and it is 10 to 60:30 to 80: 5 to 30: 5 to 30: 5 to 30. More preferably, it is 10 to 40:40 to 80: 5 to 20: 5 to 20: 5 to 20.
  • the ratio is preferably 80: 5 to 40: 5 to 40, more preferably 10 to 60:30 to 80: 5 to 30: 5 to 30, and further preferably 10 to 40:40 to 80: 5 to 20: 5. It is more preferable that the value is 20.
  • C.I. I. Pigment Yellow 139, 150, 185 are preferable, and C.I. I. Pigment Yellow 139, 150 is more preferable, C.I. I. Pigment Yellow 139 is more preferable.
  • a blue coloring agent C.I. I. Pigment Blue 15: 6 is preferred.
  • a purple coloring agent C.I. I. Pigment Violet 23 is preferred.
  • a red coloring agent Pigment Red 122, 177, 224, 254 is preferable, Pigment Red 122, 177254 is more preferable, and Pigment Red 254 is still more preferable.
  • a green coloring agent C.I. I. Pigment Green 7, 36, 58, 59 are preferred.
  • an organic black colorant When using an organic black colorant as a light shielding material, it is preferable to use it in combination with a chromatic colorant.
  • a chromatic colorant By using an organic black colorant and a chromatic colorant in combination, excellent spectral characteristics are easily obtained.
  • the chromatic colorant used in combination with the organic black colorant include red colorants, blue colorants, purple colorants and the like, and red colorants and blue colorants are preferable. These may be used alone or in combination of two or more.
  • the mixing ratio of the chromatic coloring agent to the organic black coloring agent is preferably 10 to 200 parts by mass, more preferably 15 to 150 parts by mass, with respect to 100 parts by mass of the organic black coloring agent. preferable.
  • the content of the pigment in the light shielding material is preferably 95% by mass or more, more preferably 97% by mass or more, and still more preferably 99% by mass or more based on the total amount of the light shielding material.
  • the infrared absorbing dye As the infrared absorbing dye, a compound having a maximum absorption wavelength in the near infrared region (preferably, in the range of wavelength 700 to 1300 nm) is preferable.
  • the infrared absorbing dye may be a pigment or a dye.
  • an infrared absorbing compound having a ⁇ conjugated plane including an aromatic ring of a single ring or a condensed ring can be preferably used. It is preferable that the number of atoms other than hydrogen which comprises the pi conjugation plane which an infrared rays absorption compound has is 14 or more, It is more preferable that it is 20 or more, It is still more preferable that it is 25 or more, 30 or more Is particularly preferred.
  • the upper limit is, for example, preferably 80 or less, and more preferably 50 or less.
  • the ⁇ -conjugated plane of the infrared absorbing compound preferably contains two or more single rings or two or more aromatic rings of a fused ring, more preferably three or more of the above-mentioned aromatic rings, and four or more of the above-mentioned aromatic rings It is more preferable to contain more than one, and it is particularly preferable to include 5 or more of the above-mentioned aromatic rings.
  • the upper limit is preferably 100 or less, more preferably 50 or less, and still more preferably 30 or less.
  • aromatic ring examples include benzene ring, naphthalene ring, pentalene ring, indene ring, azulene ring, heptalene ring, indacene ring, perylene ring, pentacene ring, quaterylene ring, acenaphthene ring, phenanthrene ring, anthracene ring, naphthacene ring, Chrysene ring, triphenylene ring, fluorene ring, pyridine ring, quinoline ring, isoquinoline ring, imidazole ring, benzimidazole ring, pyrazole ring, thiazole ring, benzothiazole ring, triazole ring, benzotriazole ring, oxazole ring, benzoxazole ring, imidazoline Ring, pyrazine ring, quinoxaline ring, pyrimidine ring,
  • the infrared absorbing compound is preferably a compound having a maximum absorption wavelength in the range of 700 to 1000 nm.
  • “having a maximum absorption wavelength in the range of 700 to 1000 nm” means a wavelength showing the maximum absorbance in the range of 700 to 1000 nm in the absorption spectrum of the solution of the infrared absorbing compound in solution. It means that. Chloroform, methanol, dimethylsulfoxide, ethyl acetate, tetrahydrofuran are mentioned as a measurement solvent used for measurement of the absorption spectrum in the solution of an infrared absorption compound. In the case of a compound which is dissolved in chloroform, chloroform is used as a measurement solvent. In the case of a compound which does not dissolve in chloroform, methanol is used. In addition, dimethyl sulfoxide is used when it does not dissolve in either chloroform or methanol.
  • the infrared absorbing compound is a pyrrolopyrrole compound, cyanine compound, squarylium compound, phthalocyanine compound, naphthalocyanine compound, quaterylene compound, merocyanine compound, croconium compound, oxonol compound, diimonium compound, dithiol compound, triarylmethane compound, piromethene compound
  • At least one selected from a compound, an azomethine compound, an anthraquinone compound and a dibenzofuranone compound is preferable, and at least one selected from a pyrrolopyrrole compound, a cyanine compound, a squarylium compound, a phthalocyanine compound, a naphthalocyanine compound and a diimmonium compound is more preferable.
  • At least one selected from pyrrole compounds, cyanine compounds and squarylium compounds More preferably, pyrrolo-pyrrole compounds are particularly preferred.
  • diimmonium compounds include the compounds described in JP-A-2008-528706, the contents of which are incorporated herein.
  • the phthalocyanine compound for example, a compound described in paragraph 0093 of JP-A-2012-77153, an oxytitanium phthalocyanine described in JP-A-2006-343631, a paragraph number 0013 to 0029 of JP-A-2013-195480. And the compounds described in the above, the contents of which are incorporated herein.
  • naphthalocyanine compound the compound as described in stage number 0093 of Unexamined-Japanese-Patent No. 2012-77153 is mentioned, for example, This content is integrated in this specification.
  • the cyanine compound the phthalocyanine compound, the naphthalocyanine compound, the dimonium compound and the squarylium compound, the compounds described in paragraphs [0010] to [0081] of JP-A-2010-111750 may be used, and the contents thereof are described in the present specification. Be incorporated.
  • cyanine compounds can be referred to, for example, "functional dyes, Shin Ookawara / Ken Matsuoka / Keijiro Kitao / Tsunehiro Hiraiso, Kodansha Scientific", the contents of which are incorporated herein. .
  • the infrared absorbing compound a compound described in JP-A-2016-146619 can also be used, and the contents thereof are incorporated in the present specification.
  • the pyrrolopyrrole compound is preferably a compound represented by the formula (PP).
  • R 1a and R 1b each independently represent an alkyl group, an aryl group or a heteroaryl group
  • R 2 and R 3 each independently represent a hydrogen atom or a substituent
  • R 2 and R 3 represent R 4 may be combined with each other to form a ring
  • each R 4 independently represents a hydrogen atom, an alkyl group, an aryl group, a heteroaryl group, -BR 4A R 4B , or a metal atom
  • R 4 is an R R 4A and R 4B may each independently represent a substituent, which may be covalently bonded or coordinated with at least one selected from 1 a 1 , R 1 b and R 3 .
  • R 1a and R 1b is independently preferably an aryl group or a heteroaryl group, and more preferably an aryl group.
  • the alkyl group, the aryl group and the heteroaryl group represented by R 1a and R 1b may have a substituent or may be unsubstituted.
  • the substituent include an alkoxy group, a hydroxy group, a halogen atom, a cyano group, a nitro group, -OCOR 11 , -SOR 12 , -SO 2 R 13 and the like.
  • R 11 to R 13 independently represents a hydrocarbon group or a heteroaryl group. Further, examples of the substituent include those described in paragraph Nos.
  • an alkoxy group, hydroxy group, a cyano group, a nitro group, -OCOR 11, -SOR 12, is -SO 2 R 13 preferred.
  • a group represented by R 1a and R 1b an aryl group having an alkoxy group having a branched alkyl group as a substituent, an aryl group having a hydroxy group as a substituent, or a group represented by —OCOR 11 is substituted It is preferable that it is an aryl group having as a group.
  • the carbon number of the branched alkyl group is preferably 3 to 30, and more preferably 3 to 20.
  • At least one of R 2 and R 3 is preferably an electron-withdrawing group, R 2 is an electron-withdrawing group (preferably a cyano group), and more preferably R 3 is a heteroaryl group.
  • the heteroaryl group is preferably a 5- or 6-membered ring.
  • the heteroaryl group is preferably a single ring or a fused ring, preferably a single ring or a fused ring having 2 to 8 condensations, and more preferably a single ring or a fused ring having 2 to 4 condensations.
  • the number of heteroatoms constituting the heteroaryl group is preferably 1 to 3, and more preferably 1 to 2.
  • R 4 is a hydrogen atom, an alkyl group, an aryl group, preferably a group represented by heteroaryl group or -BR 4A R 4B, a hydrogen atom, an alkyl group, represented by an aryl group or -BR 4A R 4B Is more preferably a group represented by -BR 4A R 4B .
  • the substituent represented by R 4A and R 4B is preferably a halogen atom, an alkyl group, an alkoxy group, an aryl group or a heteroaryl group, more preferably an alkyl group, an aryl group or a heteroaryl group, and an aryl group Particularly preferred. These groups may further have a substituent.
  • Two R 4 's in the formula (PP) may be the same or different.
  • each of A 1 and A 2 independently represents an aryl group, a heteroaryl group or a group represented by formula (A-1);
  • Z 1 represents a nonmetal atomic group forming a nitrogen-containing heterocyclic ring
  • R 2 represents an alkyl group, an alkenyl group or an aralkyl group
  • d represents 0 or 1.
  • the wavy line represents a connecting hand.
  • the squarylium compound is preferably a compound represented by the following formula (SQ-1).
  • Ring A and ring B each independently represent an aromatic ring
  • X A and X B each independently represent a substituent
  • G A and G B each independently represent a substituent
  • kA represents an integer of 0 to n A
  • k B represents an integer of 0 to n B
  • n A and n B respectively represent the largest integers which can be substituted on ring A or ring B
  • X A and G A , X B and G B , and X A and X B may bond to each other to form a ring, and when there are a plurality of G A and G B respectively, they may be bonded to each other to form a ring structure May be formed.
  • the substituent represented by G A and G B include the substituent T described by the formula (PP) as described above.
  • Examples of the substituent represented by X A and X B preferably a group having an active hydrogen, -OH, -SH, -COOH, -SO 3 H, -NR X1 R X2, -NHCOR X1, -CONR X1 R X2, -NHCONR X1 R X2 , -NHCOOR X1 , -NHSO 2 R X1 , -B (OH) 2 and -PO (OH) 2 are more preferable, and -OH, -SH and -NR X1 R X2 are more preferable.
  • Each of R X1 and R X1 independently represents a hydrogen atom or a substituent.
  • a substituent which X A and X B represent an alkyl group, an aryl group, or heteroaryl group is mentioned, An alkyl group is preferable.
  • Ring A and ring B each independently represent an aromatic ring.
  • the aromatic ring may be a single ring or a fused ring.
  • Specific examples of the aromatic ring include benzene ring, naphthalene ring, pentalene ring, indene ring, azulene ring, heptalene ring, indacene ring, perylene ring, pentacene ring, acenaphthene ring, phenanthrene ring, anthracene ring, naphthacene ring, chrysene ring Triphenylene ring, fluorene ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, indolizin
  • X A and G A , X B and G B , and X A and X B may bond to each other to form a ring, and when there are a plurality of G A and G B respectively, they may be bonded to each other to form a ring You may form.
  • the ring is preferably a 5- or 6-membered ring.
  • the ring may be a single ring or may be a fused ring.
  • X A and G A , X B and G B , X A and X B , G A or B B bond together to form a ring, these may be directly bonded to form a ring;
  • the ring may be formed through a divalent linking group consisting of the groups -CO-, -O-, -NH-, -BR- and combinations thereof.
  • R represents a hydrogen atom or a substituent.
  • the substituent T demonstrated by Formula (PP) mentioned above is mentioned, An alkyl group or an aryl group is preferable.
  • kA represents an integer of 0 to nA
  • kB represents an integer of 0 to nB
  • n A represents a maximum integer replaceable to ring A
  • n B represents a maximum integer replaceable to ring B Represent.
  • Each of kA and kB is preferably independently 0 to 4, more preferably 0 to 2, and particularly preferably 0 to 1.
  • the squarylium compound is also preferably a compound represented by the following formula (SQ-10), formula (SQ-11) or formula (SQ-12).
  • Formula (SQ-10) Formula (SQ-11) Formula (SQ-12)
  • each X is a group of one or more hydrogen atoms optionally substituted with a halogen atom, an alkyl group having 1 to 12 carbon atoms, or an alkoxy group.
  • n1 is 2 or 3.
  • n2 and n3 are each independently an integer of 0 to 2
  • n2 + n3 is 1 or 2.
  • Each of R 1 and R 2 independently represents an alkyl group or an aryl group.
  • the alkyl group and the aryl group may have a substituent or may be unsubstituted.
  • the substituent T demonstrated by the formula (PP) mentioned above is mentioned.
  • R 3 to R 6 each independently represent a hydrogen atom, a halogen atom, an alkyl group or an alkoxy group.
  • n is 2 or 3.
  • the cyanine compound is preferably a compound represented by the formula (C).
  • Formula (C) In the formula, each of Z 1 and Z 2 independently represents a nonmetallic atomic group forming a 5- or 6-membered nitrogen-containing heterocyclic ring which may be condensed.
  • R 101 and R 102 each independently represent an alkyl group, an alkenyl group, an alkynyl group, an aralkyl group or an aryl group
  • L 1 represents a methine chain having an odd number of methine groups
  • a and b are each independently 0 or 1;
  • X 1 represents an anion
  • c represents the number necessary to balance the charge
  • the site represented by Cy in the formula is an anion moiety
  • X 1 represents a cation
  • c represents the number necessary to balance the charge
  • c is a molecule in which the charge at the site represented by Cy in the formula is neutralized within the molecule It is 0.
  • cyanine compound As specific examples of the cyanine compound, the following compounds may be mentioned. In the following structural formulae, Me represents a methyl group. Further, as the cyanine compound, compounds described in paragraphs 0044 to 0045 of JP 2009-108267 A, compounds described in paragraphs 0026 to 0030 of JP 2002-194040 A, JP 2015-172004 A And compounds described in JP-A-2015-172102, compounds described in JP-A-2008-88426, and the like, and the contents thereof are incorporated in the present specification.
  • infrared absorbing dyes may also be used.
  • SDO-C33 Arimoto Chemical Industries Co., Ltd.
  • EEX Color IR-14 EEX Color IR-10A
  • EEX Color TX-EX-801B EEX Color TX-EX-805K
  • Shigenox NIA-8041 Shigenox NIA-8042
  • Shigenox NIA-814 Shigenox NIA-820
  • Shigenox NIA-839 Hakoko Chemical Co., Ltd.
  • Epolite V-63 Epolight 3801, Epolight 3036 (EPOLIN)
  • PRO-JET 825 LDI Film Co., Ltd. NK-3027, NK-5060 (manufactured by Hayashibara Co., Ltd.), YKR-3070 (manufactured by Mitsui Chemicals, Inc.), and the like.
  • the composition for forming a pixel contains a compound having a cyclic ether group.
  • the cyclic ether group may, for example, be an epoxy group or an oxetanyl group.
  • the compound having a cyclic ether group is preferably a compound having an epoxy group.
  • As a compound which has an epoxy group the compound which has one or more epoxy groups in 1 molecule is mentioned, and the compound which has two or more epoxy groups is preferable.
  • the number of epoxy groups is preferably 1 to 100 in one molecule.
  • the upper limit of the epoxy group may be, for example, 10 or less, or 5 or less.
  • the lower limit of the epoxy group is preferably 2 or more.
  • the compound having an epoxy group may be a low molecular weight compound (for example, having a molecular weight of less than 2000, and further having a molecular weight of less than 1000), or a macromolecular (for example, having a molecular weight of 1000 or more, in the case of a polymer, a weight average molecular weight is 1000 or more) may be sufficient.
  • the weight average molecular weight of the compound having an epoxy group is preferably 200 to 100,000, and more preferably 500 to 50,000.
  • the upper limit of the weight average molecular weight is preferably 10000 or less, more preferably 5000 or less, and still more preferably 3000 or less.
  • R EP1 to R EP3 each represent a hydrogen atom, a halogen atom or an alkyl group, and the alkyl group may have a cyclic structure, and has a substituent. It is also good. Further, R EP1 and R EP2 and R EP2 and R EP3 may be bonded to each other to form a ring structure.
  • Q EP represents a single bond or an organic group of n EP value. R EP1 to R EP3 may combine with Q EP to form a ring structure.
  • n EP represents an integer of 2 or more, preferably 2 to 10, more preferably 2 to 6. However, when Q EP is a single bond, n EP is 2.
  • R EP1 to R EP3 and Q EP can be referred to the description of paragraph Nos. 0087 to 0088 of JP-A 2014-089408, the contents of which are incorporated herein.
  • Specific examples of the compound represented by the formula (EP1) include the compounds described in paragraph 0090 of JP-A-2014-089408 and the compounds described in paragraph 0151 of JP-A-2010-054632, and The contents are incorporated herein.
  • Adeka glycyrol series eg, Adeka glycyrol ED-505 etc.
  • Epolyde series eg, Epoliad GT 401 etc. manufactured by Daicel Co., Ltd.
  • an epoxy resin can be used preferably.
  • the epoxy resin include epoxy resins which are glycidyl ethers of phenol compounds, epoxy resins which are glycidyl ethers of various novolak resins, alicyclic epoxy resins, aliphatic epoxy resins, heterocyclic epoxy resins, glycidyl ester resins
  • Epoxy resin, glycidyl amine epoxy resin, epoxy resin obtained by glycidylating halogenated phenols, condensate of silicon compound having an epoxy group and silicon compound other than the above, polymerizable unsaturated compound having an epoxy group, and others Copolymers with other polymerizable unsaturated compounds may, for example, be mentioned.
  • the epoxy equivalent of the epoxy resin is preferably 310 to 3300 g / eq, more preferably 310 to 1700 g / eq, and still more preferably 310 to 1000 g / eq.
  • a commercial item can also be used for an epoxy resin.
  • EHPE 3150 manufactured by Daicel Co., Ltd.
  • EPICLON N-695 manufactured by DIC Co., Ltd.
  • Marproof G-0150 M G-0105 SA, G-0130 SP, G-0250 SP, G-1005 S, G-1005 SA, G -1010S, G-2050M, G-01100, G-01758 (manufactured by NOF Corporation, epoxy group-containing polymer) and the like.
  • the content of the compound having a cyclic ether group is preferably 0.1 to 40% by mass with respect to the total solid content of the composition for forming a pixel .
  • the lower limit is, for example, more preferably 0.5% by mass or more, and still more preferably 1% by mass or more.
  • the upper limit is, for example, more preferably 30% by mass or less, and still more preferably 20% by mass or less.
  • the compound having a cyclic ether group may be used alone or in combination of two or more. When using 2 or more types of compounds which have cyclic ether group together, it is preferable that a total amount becomes said range.
  • the composition for forming a pixel preferably contains a resin.
  • the resin is blended, for example, in applications of dispersing pigments and the like in the composition and applications of binders.
  • resin used mainly for dispersing a pigment etc. is also called a dispersing agent.
  • such application of the resin is an example, and the resin can also be used for purposes other than such application.
  • the weight average molecular weight (Mw) of the resin is preferably 2,000 to 2,000,000.
  • the upper limit is preferably 1,000,000 or less, more preferably 500,000 or less.
  • 3,000 or more are preferable and, as for a minimum, 5,000 or more are more preferable.
  • (meth) acrylic resin, epoxy resin, ene / thiol resin, polycarbonate resin, polyether resin, polyarylate resin, polysulfone resin, polyether sulfone resin, polyphenylene resin, polyarylene ether phosphine oxide resin, polyimide resin, Polyamide imide resin, polyolefin resin, cyclic olefin resin, polyester resin, styrene resin etc. are mentioned.
  • One of these resins may be used alone, or two or more thereof may be mixed and used.
  • cyclic olefin resin norbornene resin can be preferably used from a viewpoint of heat resistance improvement.
  • Examples of commercially available products of norbornene resin include ARTON series (for example, ARTON F 4520) manufactured by JSR Corporation.
  • the resin as described in the Example of international publication WO2016 / 088645 can also be used for resin.
  • resin which has a repeating unit which has group which has an ethylenically unsaturated bond in a side chain as resin.
  • Examples of the group having an ethylenically unsaturated bond include a (meth) acryloyl group).
  • the main chain of the repeating unit and the group having an ethylenically unsaturated bond be bonded via a divalent linking group having an alicyclic structure.
  • a resin having an acid group as the resin. According to this aspect, it is easy to form a pattern excellent in rectangularity.
  • an acid group a carboxyl group, a phosphoric acid group, a sulfo group, a phenolic hydroxyl group etc. are mentioned, A carboxyl group is preferable.
  • the resin having an acid group can be used, for example, as an alkali-soluble resin.
  • a polymer having a carboxyl group in a side chain is preferable.
  • alkali-soluble polymers such as methacrylic acid copolymer, acrylic acid copolymer, itaconic acid copolymer, crotonic acid copolymer, maleic acid copolymer, partially esterified maleic acid copolymer, novolac resin, etc.
  • a phenolic resin, an acidic cellulose derivative having a carboxyl group in a side chain, and a resin obtained by adding an acid anhydride to a polymer having a hydroxy group are mentioned.
  • copolymers of (meth) acrylic acid and other monomers copolymerizable therewith are suitable as the alkali-soluble resin.
  • Other monomers copolymerizable with (meth) acrylic acid include alkyl (meth) acrylates, aryl (meth) acrylates, vinyl compounds and the like.
  • alkyl (meth) acrylate and aryl (meth) acrylate methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, pentyl (meth) acrylate, Hexyl (meth) acrylate, octyl (meth) acrylate, phenyl (meth) acrylate, benzyl (meth) acrylate, tolyl (meth) acrylate, naphthyl (meth) acrylate, cyclohexyl (meth) acrylate, etc., vinyl compounds such as styrene, ⁇ -methylstyrene, vinyl toluene, glycidyl methacrylate, acrylonitrile, vinyl acetate, N-vinyl pyrrolidone, tetrahydrofurfur
  • N-substituted maleimide monomers described in JP-A-10-300922 such as N-phenyl maleimide, N-cyclohexyl maleimide and the like can also be used.
  • These other monomers copolymerizable with (meth) acrylic acid may be only one type, or two or more types.
  • the resin having an acid group may further have a polymerizable group.
  • the polymerizable group include allyl group, methallyl group, (meth) acryloyl group and the like.
  • Commercially available products include Dianal NR series (Mitsubishi Rayon Co., Ltd.), Photomer 6173 (Carboxyl group-containing polyurethane acrylate oligomer, manufactured by Diamond Shamrock Co., Ltd.), Biscoat R-264, KS Resist 106 (all are Osaka organic) Chemical Industry Co., Ltd., Cyclomer P series (for example, ACA 230 AA), Plaxcel CF 200 series (all from Daicel Co., Ltd.), Ebecryl 3800 (Daicel UBC Co., Ltd.), Acrycure RD-F8 (Co., Ltd.) Nippon Catalyst Co., Ltd. and the like.
  • Resin having an acid group is benzyl (meth) acrylate / (meth) acrylic acid copolymer, benzyl (meth) acrylate / (meth) acrylic acid / 2-hydroxyethyl (meth) acrylate copolymer, benzyl (meth)
  • a multicomponent copolymer consisting of acrylate / (meth) acrylic acid / other monomers can be preferably used. Further, those obtained by copolymerizing 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate / polystyrene macromonomer / benzyl methacrylate / methacrylic acid copolymer described in JP-A No.
  • the resin having an acid group is a monomer containing a compound represented by the following formula (ED1) and / or a compound represented by the following formula (ED2) (hereinafter, these compounds may be referred to as "ether dimer”). It is also preferable that it is a polymer containing a repeating unit derived from a component.
  • R 1 and R 2 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 25 carbon atoms which may have a substituent.
  • R represents a hydrogen atom or an organic group having 1 to 30 carbon atoms.
  • the description in JP-A-2010-168539 can be referred to.
  • ether dimer for example, paragraph “0317” of JP-A-2013-29760 can be referred to, and the contents thereof are incorporated in the present specification.
  • the ether dimer may be only one type, or two or more types.
  • the resin having an acid group may contain a repeating unit derived from a compound represented by the following formula (X).
  • R 1 represents a hydrogen atom or a methyl group
  • R 2 represents an alkylene group having 2 to 10 carbon atoms
  • R 3 has a hydrogen atom or 1 to 20 carbon atoms which may contain a benzene ring.
  • Represents an alkyl group of n represents an integer of 1 to 15.
  • the resin having an acid group is described in JP-A-2012-208494, paragraphs 0558 to 0571 (corresponding US patent application publication No. 2012/0235099, paragraphs 0685 to 0700), JP-A-2012-198408.
  • No. 0076-0099 can be referred to, and the contents thereof are incorporated herein.
  • the resin which has an acidic radical can also use a commercial item.
  • Acrybase FF-426 manufactured by Fujikura Kasei Co., Ltd.
  • the like can be mentioned.
  • the acid value of the resin having an acid group is preferably 30 to 200 mg KOH / g.
  • the lower limit is preferably 50 mg KOH / g or more, and more preferably 70 mg KOH / g or more.
  • 150 mgKOH / g or less is preferable and 120 mgKOH / g or less of an upper limit is more preferable.
  • resin which has an acidic radical resin of the following structure etc. are mentioned, for example.
  • resin of the following structural formulae Me represents a methyl group.
  • the composition for infrared ray transmission filter can also contain resin as a dispersing agent.
  • the dispersant includes an acidic dispersant (acidic resin) and a basic dispersant (basic resin).
  • the acidic dispersant (acidic resin) represents a resin in which the amount of acid groups is larger than the amount of basic groups.
  • the acidic dispersant (acidic resin) is preferably a resin in which the amount of acid groups accounts for 70 mol% or more when the total amount of the amount of acid groups and the amount of basic groups is 100 mol%. Resins consisting only of groups are more preferred.
  • the acid group of the acidic dispersant (acidic resin) is preferably a carboxyl group.
  • the acid value of the acidic dispersant is preferably 40 to 105 mg KOH / g, more preferably 50 to 105 mg KOH / g, and still more preferably 60 to 105 mg KOH / g.
  • a basic dispersing agent represents resin whose quantity of a basic group is larger than the quantity of an acidic radical.
  • the basic dispersant is preferably a resin in which the amount of basic groups exceeds 50% by mole, where the total amount of the amount of acid groups and the amount of basic groups is 100% by mole.
  • the basic group possessed by the basic dispersant is preferably an amino group.
  • the resin used as the dispersant preferably contains a repeating unit having an acid group.
  • the resin used as the dispersing agent contains a repeating unit having an acid group, it is possible to further reduce the residue generated on the base of the pixel when forming a pattern by photolithography.
  • the resin used as the dispersant is a graft copolymer.
  • the graft copolymer is excellent in the dispersibility of the pigment and the dispersion stability after aging since the graft copolymer has affinity with the solvent by the graft chain.
  • the details of the graft copolymer can be referred to the description of Paragraph Nos. 0025 to 0094 of JP-A-2012-255128, the contents of which are incorporated herein.
  • the following resin is mentioned as a specific example of a graft copolymer.
  • the following resin is also a resin having an acid group (alkali soluble resin).
  • examples of the graft copolymer include the resins described in Paragraph Nos. 0072 to 0094 of JP 2012-255128 A, the contents of which are incorporated herein.
  • an oligoimine dispersant containing a nitrogen atom in at least one of the main chain and the side chain as the resin (dispersant).
  • the oligoimine dispersant comprises a structural unit having a partial structure X having a functional group having a pKa of 14 or less and a side chain containing a side chain Y having an atom number of 40 to 10,000, and having a main chain and a side chain
  • the resin which has a basic nitrogen atom in at least one side is preferable.
  • the basic nitrogen atom is not particularly limited as long as it is a nitrogen atom exhibiting basicity.
  • oligoimine dispersant With regard to the oligoimine dispersant, the description in paragraphs [0102] to [0166] of JP 2012-255128 A can be referred to, and the contents thereof are incorporated herein.
  • a resin having the following structure or a resin described in paragraph Nos. 0168 to 0174 of JP 2012-255128 A can be used.
  • the dispersant is also available as a commercial product, and specific examples thereof include Disperbyk-111, 161 (manufactured by BYK Chemie) and the like.
  • pigment dispersants described in paragraphs 0041 to 0130 of JP-A-2014-130338 can also be used, the contents of which are incorporated herein.
  • the resin etc. which have an acidic radical mentioned above can also be used as a dispersing agent.
  • the content of the resin is preferably 1 to 60% by mass with respect to the total solid content of the composition for forming a pixel. 5 mass% or more is preferable, and, as for a lower limit, 10 mass% or more is more preferable. 50 mass% or less is preferable, as for an upper limit, 40 mass% or less is more preferable, and 30 mass% or less is still more preferable.
  • the content of the resin having an acid group is preferably 1 to 60% by mass with respect to the total solid content of the composition for forming a pixel.
  • the mass ratio of the polymerizable compound to the resin is preferably such that the polymerizable compound / resin is 0.3 to 1.5.
  • the lower limit of the mass ratio is preferably 0.4 or more, and more preferably 0.5 or more. 1.4 or less is preferable and, as for the upper limit of the said mass ratio, 1.3 or less is more preferable. If the above mass ratio is in the above range, pixels having more excellent rectangularity can be formed.
  • the mass ratio of the polymerizable compound to the resin having an acid group is preferably 0.4 to 1.4, that is, the compound having a polymerizable compound / acid group.
  • the lower limit of the mass ratio is preferably 0.5 or more, and more preferably 0.6 or more. 1.3 or less are preferable and, as for the upper limit of the said mass ratio, 1.2 or less is more preferable. If the above mass ratio is in the above range, pixels having more excellent rectangularity can be formed.
  • the composition for forming a pixel can further contain a pigment derivative.
  • the pigment derivative include a compound having a structure in which a part of the pigment is substituted with an acid group, a basic group, a group having a salt structure, or a phthalimidomethyl group.
  • the compound represented by Formula (B1) is preferable.
  • P represents a dye structure
  • L represents a single bond or a linking group
  • X represents an acid group, a basic group, a group having a salt structure or a phthalimidomethyl group
  • m is an integer of 1 or more
  • N represents an integer of 1 or more, and when m is 2 or more, the plurality of L and X may be different from each other, and when n is 2 or more, the plurality of X may be different from each other.
  • pyrrolopyrrole pigment structure As the pigment structure represented by P, pyrrolopyrrole pigment structure, diketopyrrolopyrrole pigment structure, quinacridone pigment structure, anthraquinone pigment structure, dianthraquinone pigment structure, benzoisoindole pigment structure, thiazine indigo pigment structure, azo pigment structure, quinophthalone Dye structure, Phthalocyanine dye structure, Naphthalocyanine dye structure, Dioxazine dye structure, Perylene dye structure, Perinone dye structure, Benzoimidazolone dye structure, Benzothiazole dye structure, Benzoimidazole dye structure, and at least one selected from Benzoimidazole dye structure And at least one selected from pyrrolopyrrole dye structure, diketopyrrolopyrrole dye structure, quinacridone dye structure and benzimidazolone dye structure is more preferable, and pyrrolopyrrole is more preferable. Containing structure is
  • the linking group represented by L includes a group consisting of a hydrocarbon group, a heterocyclic group, -NR-, -SO 2- , -S-, -O-, -CO- or a combination thereof.
  • R represents a hydrogen atom, an alkyl group or an aryl group.
  • Examples of the acid group represented by X include a carboxyl group, a sulfo group, a carboxylic acid amide group, a sulfonic acid amide group, and an imidic acid group.
  • a group represented by -NHCOR X1 is preferable.
  • the sulfonic acid amide group is preferably a group represented by —NHSO 2 R X2 .
  • the imide group is preferably a group represented by —SO 2 NHSO 2 R X3 , —CONHSO 2 R X4 , —CONHCOR X5 or —SO 2 NHCOR X6 .
  • Each of R X1 to R X6 independently represents a hydrocarbon group or a heterocyclic group.
  • the hydrocarbon group and the heterocyclic group which R X1 to R X6 represent may further have a substituent.
  • the substituent T described in the above-mentioned formula (PP) can be mentioned, and a halogen atom is preferable, and a fluorine atom is more preferable.
  • An amino group is mentioned as a basic group which X represents.
  • a salt structure which X represents the salt of the acid group or basic group mentioned above is mentioned.
  • the content of the pigment derivative is preferably 1 to 50 parts by mass with respect to 100 parts by mass of the pigment. 3 mass parts or more are preferable, and 5 mass parts or more of a lower limit are more preferable. 40 mass parts or less are preferable, and 30 mass parts or less are more preferable.
  • a pigment derivative may use only 1 type and may use 2 or more types. When using 2 or more types, it is preferable that a total amount becomes said range.
  • the composition for forming a pixel can contain a solvent.
  • the solvent include organic solvents.
  • the solvent is basically not particularly limited as long as the solubility of each component and the coating property of the composition are satisfied.
  • the organic solvent include, for example, esters, ethers, ketones, aromatic hydrocarbons and the like. For details of these, reference can be made to paragraph No. 0223 of International Publication WO 2015/166779, the content of which is incorporated herein. Further, ester solvents substituted with a cyclic alkyl group and ketone solvents substituted with a cyclic alkyl group can also be preferably used.
  • the organic solvent examples include dichloromethane, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, Examples include cyclohexyl acetate, cyclopentanone, ethyl carbitol acetate, butyl carbitol acetate, propylene glycol monomethyl ether, and propylene glycol monomethyl ether acetate.
  • the organic solvent may be used singly or in combination of two or more.
  • 3-methoxy-N, N-dimethylpropanamide and 3-butoxy-N, N-dimethylpropanamide are also preferable from the viewpoint of solubility improvement.
  • aromatic hydrocarbons benzene, toluene, xylene, ethylbenzene etc.
  • a solvent having a low metal content it is preferable to use a solvent having a low metal content, and the metal content of the solvent is preferably, for example, 10 parts per billion or less. If necessary, a solvent having a mass ppt (parts per trillion) level may be used, and such a high purity solvent is provided by, for example, Toyo Gosei Co., Ltd. (Chemical Industry Daily, November 13, 2015).
  • a method of removing impurities such as metal from the solvent for example, distillation (molecular distillation, thin film distillation, etc.) and filtration using a filter can be mentioned.
  • distillation molecular distillation, thin film distillation, etc.
  • filtration using a filter As a filter hole diameter of a filter used for filtration, 10 micrometers or less are preferred, 5 micrometers or less are more preferred, and 3 micrometers or less are still more preferred.
  • the material of the filter is preferably polytetrafluoroethylene, polyethylene or nylon.
  • the solvent may contain isomers (compounds having the same number of atoms but different structures). Moreover, only one type of isomer may be contained, or two or more types may be contained.
  • the organic solvent preferably has a peroxide content of 0.8 mmol / L or less, and more preferably contains substantially no peroxide.
  • the content of the solvent is preferably 10 to 90% by mass, more preferably 20 to 80% by mass, and still more preferably 25 to 75% by mass with respect to the total amount of the composition for forming a pixel. Moreover, it may be preferable that the composition for pixel formation does not contain aromatic hydrocarbons (benzene, toluene, xylene, ethylbenzene etc.) as a solvent for reasons such as environmental reasons.
  • aromatic hydrocarbons benzene, toluene, xylene, ethylbenzene etc.
  • the composition for pixel formation can contain a polymerization inhibitor.
  • a polymerization inhibitor hydroquinone, p-methoxyphenol, di-tert-butyl-p-cresol, pyrogallol, tert-butyl catechol, benzoquinone, 4,4'-thiobis (3-methyl-6-tert-butylphenol), Examples include 2,2′-methylenebis (4-methyl-6-t-butylphenol) and N-nitrosophenylhydroxyamine salts (ammonium salts, cerous salts and the like). Among them, p-methoxyphenol is preferred.
  • the content of the polymerization inhibitor is preferably 0.001 to 5% by mass with respect to the total solid content of the composition for forming a pixel.
  • the composition for forming a pixel can contain a silane coupling agent.
  • the silane coupling agent means a silane compound having a hydrolyzable group and other functional groups.
  • the hydrolyzable group is a substituent which is directly bonded to a silicon atom and can form a siloxane bond by at least one of a hydrolysis reaction and a condensation reaction.
  • a hydrolysable group a halogen atom, an alkoxy group, an acyloxy group etc. are mentioned, for example, An alkoxy group is preferable. That is, the silane coupling agent is preferably a compound having an alkoxysilyl group.
  • a vinyl group, a styryl group, a (meth) acryloyl group, a mercapto group, an epoxy group, an oxetanyl group, an amino group, a ureido group, a sulfide group, an isocyanate group, a phenyl group, for example And the like, and (meth) acryloyl group and epoxy group are preferable.
  • the silane coupling agent include compounds described in paragraphs 0018 to 0036 of JP 2009-288703, and compounds described in paragraphs 0056 to 0066 of JP 2009-242604, the contents of which are It is incorporated in the specification.
  • the content of the silane coupling agent is preferably 0.01 to 15.0% by mass, and more preferably 0.05 to 10.0% by mass, with respect to the total solid content of the composition for forming a pixel. Only one type of silane coupling agent may be used, or two or more types may be used. In the case of two or more types, the total amount is preferably in the above range.
  • the composition for forming a pixel may contain a surfactant.
  • a surfactant various surfactants such as a fluorine-based surfactant, a nonionic surfactant, a cationic surfactant, an anionic surfactant, and a silicon-based surfactant can be used.
  • the surfactant can be referred to in paragraphs [0238 to 0245] of International Publication WO 2015/166779, the content of which is incorporated herein.
  • the surfactant is preferably a fluorine-based surfactant.
  • the liquid properties in particular, the fluidity
  • the liquid saving property can be further improved.
  • a film with small thickness unevenness can also be formed.
  • the fluorine content in the fluorine-based surfactant is preferably 3 to 40% by mass, more preferably 5 to 30% by mass, and particularly preferably 7 to 25% by mass.
  • the fluorine-based surfactant having a fluorine content in this range is effective in terms of the uniformity of the thickness of the coating film and the liquid saving property, and the solubility in the composition is also good.
  • fluorine-based surfactant examples include the surfactants described in paragraph Nos. 0060 to 0064 of JP-A-2014-41318 (paragraph Nos. 0060 to 0064 of corresponding international publication 2014/17669) and the like, and the like. Examples thereof include the surfactants described in paragraphs 0117 to 0132 of JP2011-132503A, the contents of which are incorporated herein.
  • fluorine-based surfactants examples include Megafac F171, F172, F173, F176, F177, F141, F142, F143, R30, F437, F475, F479, F482, F554, F780 (above, DIC) (Manufactured by Sumitomo Corporation), Florard FC430, FC431, FC171 (all, Sumitomo 3M Co., Ltd.), Surfron S-382, SC-101, SC-103, SC-104, SC-105, SC-1068, SC- 381, SC-383, S-393, KH-40 (all, manufactured by Asahi Glass Co., Ltd.), PolyFox PF636, PF656, PF6320, PF6520, PF7002 (all, manufactured by OMNOVA) and the like.
  • the fluorine-based surfactant is a molecular structure having a functional group containing a fluorine atom, and an acrylic compound in which a portion of the functional group containing a fluorine atom is cleaved when heat is applied to volatilize the fluorine atom is also preferable. It can be used.
  • a fluorochemical surfactant Megafuck DS series (Chemical Chemical Daily, February 22, 2016) manufactured by DIC Corporation (Nikkei Sangyo Shimbun, February 23, 2016), for example, Megafuck DS -21 can be mentioned.
  • fluorinated surfactant it is also preferable to use a polymer of a fluorine atom-containing vinyl ether compound having a fluorinated alkyl group or a fluorinated alkylene ether group and a hydrophilic vinyl ether compound as the fluorinated surfactant.
  • fluorine-based surfactants can be referred to the description of JP-A-2016-216602, the contents of which are incorporated herein.
  • the fluorine-based surfactant a block polymer can also be used.
  • the fluorine-based surfactant has a repeating unit derived from a (meth) acrylate compound having a fluorine atom and two or more (preferably five or more) alkyleneoxy groups (preferably ethyleneoxy and propyleneoxy) (meth)
  • a fluorine-containing polymer compound containing a repeating unit derived from an acrylate compound can also be preferably used.
  • the following compounds are also exemplified as the fluorinated surfactant used in the present invention.
  • the weight average molecular weight of the above-mentioned compounds is preferably 3,000 to 50,000, for example, 14,000. In the above compounds,% indicating the proportion of repeating units is mol%.
  • a fluorine-based surfactant a fluorine-containing polymer having an ethylenically unsaturated group in the side chain can also be used.
  • compounds described in paragraph Nos. 0050 to 0090 and paragraphs 0289 to 0295 of JP-A-2010-164965 for example, Megaface RS-101, RS-102, RS-718K manufactured by DIC Corporation. , RS-72-K and the like.
  • the fluorine-based surfactant compounds described in Paragraph Nos. 0015 to 0158 of JP-A-2015-117327 can also be used.
  • nonionic surfactants include glycerol, trimethylolpropane, trimethylolethane and ethoxylates and propoxylates thereof (eg, glycerol propoxylate, glycerol ethoxylate, etc.), polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, Polyoxyethylene oleyl ether, polyoxyethylene octyl phenyl ether, polyoxyethylene nonyl phenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate, sorbitan fatty acid ester, pluronic L10, L31, L61, L62, 10R5, 17R2, 25R2 (BASF Company company), Tetronics 304, 701, 704, 901, 904, 150R1 (BAS).
  • glycerol trimethylolpropane
  • silicone surfactants include: Toray silicone DC3PA, Toray silicone SH7PA, Toray silicone DC11PA, Toray silicone SH21PA, Toray silicone SH28PA, Toray silicone SH29PA, Toray silicone SH30PA, Toray silicone SH8400 (more than Toray Dow Corning ), TSF-4440, TSF-4300, TSF-4445, TSF-4460, TSF-4452 (above, Momentive Performance Materials Co., Ltd.), KP-341, KF-6001, KF-6002 (above, Shin-Etsu Silicone Co., Ltd.), BYK 307, BYK 323, BYK 330 (above, manufactured by Big Chemie Co., Ltd.) and the like.
  • the content of the surfactant is preferably 0.001% by mass to 5.0% by mass, and more preferably 0.005% to 3.0% by mass, with respect to the total solid content of the composition for forming a pixel.
  • the surfactant may be only one type, or two or more types. In the case of two or more types, the total amount is preferably in the above range.
  • the composition for forming a pixel can contain an ultraviolet absorber.
  • an ultraviolet absorber conjugated diene compounds, aminobutadiene compounds, methyldibenzoyl compounds, coumarin compounds, salicylate compounds, benzophenone compounds, benzotriazole compounds, acrylonitrile compounds, hydroxyphenyl triazine compounds and the like can be used. The details of these can be referred to the descriptions of paragraphs 0052 to 0072 of JP 2012-208374 A and paragraphs 0317 to 0334 of JP 2013-68814 A, the contents of which are incorporated herein.
  • Examples of commercially available conjugated diene compounds include UV-503 (manufactured by Daito Kagaku Co., Ltd.).
  • UV-1-Formula (UV-3) the compound represented by Formula (UV-1) or Formula (UV-3) is more preferable, and a formula The compound represented by (UV-1) is more preferable.
  • R 101 and R 102 each independently represent a substituent
  • m1 and m2 each independently represent 0 to 4.
  • R 201 and R 202 each independently represent a hydrogen atom or an alkyl group
  • R 203 and R 204 each independently represent a substituent.
  • each of R 301 to R 303 independently represents a hydrogen atom or an alkyl group
  • R 304 and R 305 each independently represent a substituent.
  • the content of the ultraviolet absorber is preferably 0.01 to 10% by mass, and more preferably 0.01 to 5% by mass, with respect to the total solid content of the composition for forming a pixel.
  • the ultraviolet absorber may be used alone or in combination of two or more. When using 2 or more types, it is preferable that a total amount becomes said range.
  • the composition for forming a pixel can contain an antioxidant.
  • an antioxidant a phenol compound, a phosphite compound, a thioether compound etc. are mentioned.
  • the phenolic compound any phenolic compound known as a phenolic antioxidant can be used.
  • a preferable phenol compound a hindered phenol compound is mentioned.
  • part (ortho position) adjacent to phenolic hydroxyl group is preferable.
  • the aforementioned substituent is preferably a substituted or unsubstituted alkyl group having 1 to 22 carbon atoms.
  • the antioxidant is also preferably a compound having a phenol group and a phosphite group in the same molecule.
  • a phosphorus antioxidant can also be used conveniently for antioxidant.
  • a phosphorus antioxidant tris [2-[[2,4,8,10-tetrakis (1,1-dimethylethyl) dibenzo [d, f] [1,3,2] dioxaphosphepin-6 -Yl] oxy] ethyl] amine, tris [2-[(4,6,9,11-tetra-tert-butyldibenzo [d, f] [1,3,2] dioxaphosphepin-2-yl And the like]) oxy] ethyl] amine, ethyl phosphite bis (2,4-di-tert-butyl-6-methylphenyl) and the like.
  • antioxidants examples include Adekastab AO-20, Adekastab AO-30, Adekastab AO-40, Adekastab AO-50, Adekastab AO-50F, Adekastab AO-60, Adekastab AO-60G, Adekastab AO-80. And Adekastab AO-330 (above, ADEKA Co., Ltd.) and the like.
  • the content of the antioxidant is preferably 0.01 to 20% by mass, and more preferably 0.3 to 15% by mass, with respect to the total solid content of the composition for forming a pixel.
  • One type of antioxidant may be used or two or more types may be used. When using 2 or more types, it is preferable that a total amount becomes said range.
  • the composition for forming a pixel may, if necessary, be a sensitizer, a curing accelerator, a filler, a thermosetting accelerator, a plasticizer and other auxiliary agents (eg, conductive particles, a filler, an antifoaming agent, A flame retardant, a leveling agent, a peeling accelerator, a fragrance, a surface tension regulator, a chain transfer agent, etc. may be contained. Properties such as film physical properties can be adjusted by appropriately containing these components. These components are described, for example, in JP-A-2012-003225, paragraph No. 0183 or later (corresponding to US Patent Application Publication No. 2013/0034812, paragraph No. 0237), JP-A-2008-250074, paragraph The descriptions of numbers 0101 to 0104, 0107 to 0109, etc. can be referred to, and the contents thereof are incorporated herein.
  • the viscosity (23 ° C.) of the composition for forming a pixel is preferably, for example, 1 to 100 mPa ⁇ s when a film is formed by coating.
  • the lower limit is preferably 2 mPa ⁇ s or more, and more preferably 3 mPa ⁇ s or more.
  • the upper limit is more preferably 50 mPa ⁇ s or less, still more preferably 30 mPa ⁇ s or less, and particularly preferably 15 mPa ⁇ s or less.
  • a container for the composition for pixel formation A well-known container can be used.
  • a container for the purpose of suppressing the mixing of impurities into the raw materials and the composition, a multilayer bottle in which the inner wall of the container is composed of six types and six layers of resin or a bottle in which six types of resin are seven layers It is also preferred to use.
  • the container described in JP-A-2015-123351 can be mentioned.
  • the composition for forming a pixel can be prepared by mixing the above-mentioned components. At the time of preparation of the composition for forming a pixel, all the components may be simultaneously dissolved or dispersed in a solvent to prepare a composition for forming a pixel, and, if necessary, two or more components appropriately blended with each other. The solution or dispersion may be prepared in advance and mixed at the time of use (at the time of application) to prepare a composition for forming a pixel.
  • the composition for pixel formation contains particle
  • mechanical force used to disperse the particles includes compression, squeezing, impact, shearing, cavitation and the like. Specific examples of these processes include bead mills, sand mills, roll mills, ball mills, paint shakers, microfluidizers, high speed impellers, sand grinders, flow jet mixers, high pressure wet atomization, ultrasonic dispersion and the like.
  • a bead having a small diameter, treatment under conditions in which the pulverizing efficiency is enhanced by increasing the packing ratio of beads, or the like.
  • the process of dispersing particles and the dispersing machine are the dispersion technology and industrial application centering on "Dispersion Technology Complete, Information Technology Co., Ltd. issued July 15, 2005" and "suspension (solid / liquid dispersion system)" The process and the dispersing machine described in Paragraph No.
  • JP-A-2015-157893 published on October 10, 1978
  • the particles may be subjected to a refinement process in a salt milling step.
  • the materials, equipment, processing conditions and the like used in the salt milling step can be referred to, for example, the descriptions of JP-A-2015-194521 and JP-A-2012-04629.
  • a filter for the purpose of removal of a foreign material, reduction of a defect, etc.
  • a filter if it is a filter conventionally used for filtration applications etc., it can be used, without being limited in particular.
  • a fluorocarbon resin such as polytetrafluoroethylene (PTFE), a polyamide-based resin such as nylon (for example, nylon-6, nylon-6, 6), or a polyolefin resin such as polyethylene or polypropylene (PP)
  • Filters made of materials such as polyolefin resins of Among these materials, polypropylene (including high density polypropylene) and nylon are preferable.
  • the pore diameter of the filter is suitably about 0.01 to 7.0 ⁇ m, preferably about 0.01 to 3.0 ⁇ m, and more preferably about 0.05 to 0.5 ⁇ m. If the pore diameter of the filter is in the above range, fine foreign particles can be reliably removed. It is also preferable to use a fibrous filter medium.
  • the fibrous filter medium include polypropylene fiber, nylon fiber, glass fiber and the like. Specifically, filter cartridges of SBP type series (SBP 008 and the like), TPR type series (TPR 002, TPR 005 and the like), and SHPX type series (SHPX 003 and the like) manufactured by Loki Techno, Inc. can be mentioned.
  • filters different filters (eg, a first filter, a second filter, etc.) may be combined. In that case, filtration with each filter may be performed only once or may be performed twice or more. Moreover, you may combine the filter of a different hole diameter within the range mentioned above.
  • the pore size here can refer to the nominal value of the filter manufacturer. As a commercially available filter, for example, it is selected from various filters provided by Nippon Pall Co., Ltd. (DFA 4201 NIEY etc.), Advantech Toyo Co., Ltd., Nippon Entegris Co., Ltd. (old Japan Microlith Co., Ltd.) or Kitz Micro Filter Co., Ltd. can do.
  • the second filter can be made of the same material as the first filter.
  • the filtration with the first filter may be performed only on the dispersion liquid, and after mixing other components, the filtration may be performed with the second filter.
  • Resist compositions 1 to 8 The following raw materials were mixed to prepare resist compositions 1 to 8.
  • the solid content concentration of the resist composition was adjusted by the content of propylene glycol monomethyl ether acetate (PGMEA).
  • PMEA propylene glycol monomethyl ether acetate
  • the resin used for preparation of the resist composition, the solid content concentration of the resist composition, and the viscosity at 25 ° C. of the resist composition are described together in the following table.
  • Resin A Resin of the following structure.
  • the numerical value attached to the repeating unit is a molar ratio.
  • Resin B Resin of the following structure.
  • the numerical value attached to the repeating unit is a molar ratio.
  • Resin C Resin of the following structure.
  • the numerical value attached to the repeating unit is a molar ratio.
  • Resin D Resin of the following structure.
  • the numerical value attached to the repeating unit is a molar ratio.
  • Resin E Resin of the following structure.
  • the numerical value attached to the repeating unit is a molar ratio.
  • the compositional ratio of the resin was calculated by 1 H-NMR (nuclear magnetic resonance) or 13 C-NMR measurement.
  • the weight average molecular weight (Mw: in terms of polystyrene) of the resin was calculated by GPC (solvent: THF) measurement.
  • Green Composition Green Composition, Red Composition, Blue Composition
  • Green Composition Green Composition
  • the following components were stirred and then filtered through a nylon filter (manufactured by Nippon Pall Co., Ltd.) having a pore size of 0.45 ⁇ m to prepare a Green composition having a color material concentration of 49% by mass in the solid content.
  • Green pigment dispersion 81.3 g Polymerizable compound 1 ⁇ 3.89 g Resin 1 ... 3.44 g Photopolymerization initiator 1 ... 0.51 g Photopolymerization initiator 2 ... 0.36 g
  • Red Composition >> The following components were stirred and then filtered through a nylon filter (manufactured by Nippon Pall Co., Ltd.) having a pore size of 0.45 ⁇ m to prepare a Red composition in which the color material concentration in the solid content was 50% by mass.
  • Red pigment dispersion 59.5 g Polymerizable compound 2 ... 1.15 g Resin 1 ... 1.39 g Photopolymerization initiator 1 ... 0.40 g Surfactant 2 ... 0.04 g Polymerization inhibitor 1 ... 0.0004 g Solvent 1 ... 8.1 g Solvent 2 ... 29.4 g
  • Blue composition >> The following components were stirred and then filtered through a nylon filter (manufactured by Nippon Pall Co., Ltd.) having a pore size of 0.45 ⁇ m to prepare a Blue composition having a color material concentration of 36% by mass in the solid content.
  • Blue pigment dispersion 29.6 g Polymerizable compound 1 ... 4.74 g Resin 1 ... 3.36 g Photopolymerization initiator 1 ... 1.13 g Surfactant 2 ... 0.03 g Polymerization inhibitor 1 ... 0.001 g Solvent 1 ... 26.7 g Solvent 2 ... 34.4 g
  • Green pigment dispersion C. I. Pigment Green 58, 9.2 parts by mass, C.I. I. 2.3 parts by mass of Pigment Yellow 185, 1.7 parts by mass of pigment derivative 1, 4.0 parts by mass of dispersant 1, and 82.8 parts by mass of propylene glycol monomethyl ether acetate (PGMEA) 230 parts by mass of zirconia beads of 0.3 mm in diameter was added to the solution, dispersion treatment was performed for 3 hours using a paint shaker, and the beads were separated by filtration to prepare a green pigment dispersion.
  • the green pigment dispersion had a solid content of 17.2% by mass and a pigment content of 11.5% by mass.
  • Pigment derivative 1 Compound of the following structure.
  • Et is an ethyl group.
  • Red pigment dispersion C. I. Pigment Red 254, 8.76 parts by mass, C.I. I. Pigment Yellow 139 3.24 parts by mass, 9.0 parts by mass of a dispersing agent (Disperbyk-161, manufactured by BYK Chemie), and 79.0 parts by mass of PGMEA are mixed with a mixed solution of 0.3 mm in diameter 230 parts by mass of beads were added, dispersion was performed for 3 hours using a paint shaker, and the beads were separated by filtration to prepare a red pigment dispersion.
  • the red pigment dispersion had a solid content of 21.0% by mass and a pigment content of 12.0% by mass.
  • Blue pigment dispersion C. I. Pigment Blue 15: 6 at 10.1 parts by mass
  • C.I. I. A mixed solution of 2.7 parts by mass of Pigment Violet 23, 5.0 parts by mass of a dispersant (Disperbyk-161, manufactured by BYK Chemie), and 82.2 parts by mass of PGMEA is zirconia with a diameter of 0.3 mm.
  • 230 parts by mass of beads were added, dispersion was performed for 3 hours using a paint shaker, and the beads were separated by filtration to prepare a blue pigment dispersion.
  • the blue pigment dispersion had a solid content of 17.8% by mass and a pigment content of 12.8% by mass.
  • Polymerizable compound 1 Polymerizable compound 1: NK ester A-TMMT (manufactured by Shin-Nakamura Chemical Co., Ltd.)
  • Polymerizable compound 2 NK ester A-DPH-12E (manufactured by Shin-Nakamura Chemical Co., Ltd.)
  • Resin 1 Acrycure RD-F8 (manufactured by Nippon Shokubai Co., Ltd.)
  • Photopolymerization initiator 1 IRGACURE OXE01 (manufactured by BASF)
  • Photoinitiator 2 IRGACURE OXE03 (manufactured by BASF)
  • Surfactant Surfactant 1: KF-6002 (manufactured by Shin-Etsu Silicone Co., Ltd.)
  • Polymerization inhibitor 1 4-methoxyphenol Additive 1: EHPE 3150 (manufactured by Daicel Co., Ltd.) Solvent 1: Propylene glycol monomethyl ether acetate (PGMEA) Solvent 2: butyl acetate
  • composition for infrared cut filter The following components were stirred, and then filtered through a nylon filter (made by Nippon Pall Co., Ltd.) with a pore size of 0.45 ⁇ m to prepare a composition for infrared cut filter.
  • Photopolymerization initiator (IRGACURE OXE01, manufactured by BASF) ... 1.0 g UV absorber (compound of the following structure) ⁇ 1.6 g -Surfactant (surfactant 2 described above) ... 0.025 g Polymerization inhibitor (4-methoxyphenol): 0.003 g ⁇ Antioxidant (ADEKA STAB AO-80, manufactured by ADEKA Co., Ltd.) ... 0.2 g ⁇ PGMEA ... 41.5 g
  • Infrared Absorbing Dye Dispersion A mixture of 2.5 parts by mass of infrared absorbing dye 1, 0.5 parts by mass of pigment derivative 2, 1.8 parts by mass of dispersant 2, and 39.0 parts by mass of PGMEA is 0.3 mm in diameter 230 parts by mass of zirconia beads were added, dispersion was performed for 3 hours using a paint shaker, and the beads were separated by filtration to prepare an infrared absorbing dye dispersion.
  • Infrared absorbing dye 1 a compound of the following structure. In the following structural formulae, Ph is a phenyl group.
  • Pigment derivative 2 Compound of the following structure. In the following structural formulae, Ph is a phenyl group.
  • composition for infrared transmission filter The following components were stirred and then filtered through a nylon filter (made by Nippon Pall Co., Ltd.) with a pore size of 0.45 ⁇ m to prepare a composition for an infrared transmission filter.
  • Pigment Dispersion Y-1 (Preparation of Pigment Dispersion Y-1)
  • C. I. Pigment Yellow 139 2.5 parts by mass, 1.6 parts by mass of the pigment derivative 1, 4.4 parts by mass of the dispersing agent 1, and 83.0 parts by mass of PGMEA are mixed, and the diameter is 0.3 mm.
  • 230 parts by mass of zirconia beads were added, dispersion was performed for 3 hours using a paint shaker, and the beads were separated by filtration to prepare a pigment dispersion Y-1.
  • Example 1 (Examples 1 to 8, Comparative Example 2) A p-type silicon substrate was used as a support. Boron was introduced into the p-type silicon substrate by ion implantation and heat treatment was performed to form an n-type well having a surface concentration of about 2 ⁇ 10 16 cm ⁇ 3 .
  • the resist composition described in the following table was applied to the surface of the p-type silicon substrate on which the n-type well was formed, and a pattern was formed to form a resist pattern having a film thickness described in the following table. The resist pattern was formed such that one side of the photodiode portion formed by ion implantation had a width of 1.75 ⁇ m.
  • phosphorus was implanted into the support at a dose of 2 ⁇ 10 13 cm ⁇ 2 and an energy of 80 KeV by ion implantation to form a p-type photodiode portion.
  • the resist pattern was peeled and removed.
  • the gate oxide film is formed only on the photodiode portion.
  • boron was implanted under the conditions of a dose amount of 2 ⁇ 10 12 cm ⁇ 2 and an energy of 35 KeV by an ion implantation method to the support from which the resist pattern was peeled, to form a p-type first channel doped region. .
  • a resist pattern covering the photodiode portion and the first channel doped region is formed on the support, and the ion implantation method is performed using this resist pattern as a mask, and the dose of phosphorus is 6 ⁇ 10 12 cm ⁇ 2 and the energy is 50 KeV.
  • a phosphorus-doped polysilicon control electrode was formed on the support, and patterning was performed to form a control electrode.
  • a MOS (metal-oxide-semiconductor) transistor was formed according to a known method.
  • a first interlayer insulating film, a contact, a first metal interconnection, a second interlayer insulating film, a via for connecting the first metal interconnection and the second metal interconnection, a second metal interconnection, a passivation film It formed one by one.
  • the light receiving element was manufactured.
  • the composition for an infrared ray cut filter was applied to the light receiving element produced in the above process by a spin coating method so that the film thickness after film formation was 1.0 ⁇ m. Subsequently, it heated at 100 degreeC for 2 minutes using the hotplate. Next, using a KrF exposure machine (FPA-6000ES6a, manufactured by Canon), exposure was performed with KrF rays (wavelength: 248 nm) at a dose of 500 mJ / cm 2 through a mask having a 1 ⁇ m square Bayer pattern. Subsequently, paddle development was performed at 23 ° C. for 60 seconds using a 0.3% by mass aqueous solution of tetramethylammonium hydroxide (TMAH).
  • TMAH tetramethylammonium hydroxide
  • the above red composition and blue composition are also coated to a film thickness of 0.5 ⁇ m in the same manner as above, and an i-line stepper exposure apparatus FPA-3000i5 + (manufactured by Canon) is used to make the pixel size 1 ⁇ m square.
  • a composition for forming an infrared transmission filter layer was applied by spin coating so that the film thickness after film formation was 0.5 ⁇ m.
  • pixels of the infrared ray transmitting layer were formed in the missing part of the pixels of the infrared ray cutting layer to form an infrared ray transmitting filter. This was incorporated into a solid-state imaging device according to a known method to manufacture a device.
  • each pixel an i-line stepper exposure device FPA-3000i5 + (Canon Co., Ltd.) is used as an exposure device, and the pixels of the infrared cut layer are exposed with i-line at an exposure dose of 1000 mJ / cm 2 , The green pixel, the red pixel and the blue pixel are exposed with i-line at an exposure dose of 200 mJ / cm 2 respectively, and the pixels of the infrared transmission layer are exposed with an exposure dose of 300 mJ / cm 2 with i-line Each pixel was formed by the method similar to manufacture example 1, and the device of comparative example 1 and 3 was manufactured.
  • FPA-3000i5 + Canon Co., Ltd.
  • Luminance signal noise (S / N) was calculated from these noises, an illuminance value (referred to as SNR10) at which this S / N was 10 was calculated, and noise for visible light was evaluated according to the following criteria. The smaller the value of SNR10, the lower the noise.
  • the device of the example had a high S / N ratio to infrared light. Moreover, remarkable improvement was seen also in the noise with respect to visible light.
  • the same excellent effects as those of the respective embodiments can be obtained.
  • the same effect can be obtained by changing the photopolymerization initiator in the composition for color filter to the same amount of IRGACURE OXE02 (manufactured by BASF).
  • Support body 2 Pattern of resist film (resist pattern) 3: Photodiode section 110: Light receiving element 111: Infrared cut filter 112: Color filter 114: Infrared transmission filter 115: Micro lens 116 : Flattened layer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials For Photolithography (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un dispositif capable de détecter une lumière dotée d'un bruit réduit tout en augmentant la sensibilité par rapport à la lumière cible. Le procédé de fabrication d'un dispositif comprend : une étape de fabrication d'un élément de réception de lumière par formation, à l'aide d'une composition de réserve, d'un motif d'un film de réserve ayant une épaisseur non inférieure à 5 µm sur un corps de support, et par réalisation d'une injection d'ions par rapport au corps de support en utilisant le motif de film de réserve en tant que masque ; une étape de formation, dans au moins une partie d'une région dans laquelle l'injection d'ions destinée à l'élément de réception de lumière a été effectuée, d'une couche d'une composition pour former des pixels d'un filtre optique ; une étape d'irradiation de la couche de la composition pour former les pixels avec une lumière ayant une longueur d'onde inférieure ou égale à 300 nm pour exposer la couche sous la forme d'un motif ; et une étape de formation des pixels par développement de la couche de la composition pour former les pixels qui ont été exposés.
PCT/JP2018/021631 2017-07-04 2018-06-06 Procédé de fabrication de dispositif Ceased WO2019009001A1 (fr)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019023671A (ja) * 2017-07-21 2019-02-14 東京応化工業株式会社 感光性組成物、パターン形成方法、硬化物、及び表示装置
JP2019045659A (ja) * 2017-08-31 2019-03-22 東京応化工業株式会社 感光性組成物、硬化物形成方法、硬化物、画像表示装置用パネル、及び画像表示装置
WO2021002902A3 (fr) * 2019-04-01 2021-04-08 BWXT Advanced Technologies LLC Compositions pour la fabrication additive et procédés de fabrication additive, en particulier, de composants de réacteur nucléaire
KR20220044580A (ko) * 2019-09-19 2022-04-08 후지필름 가부시키가이샤 착색 조성물, 경화막, 컬러 필터 및 표시 장치
JP2025009028A (ja) * 2023-07-06 2025-01-20 ａｒｔｉｅｎｃｅ株式会社 赤外線透過型着色組成物、被膜および光半導体装置

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005106587A1 (fr) * 2004-04-28 2005-11-10 Tokyo Ohka Kogyo Co., Ltd. Composition de résine positive, procédé pour la fabrication d’un motif de résine et procédé d’implantation ionique
JP2007250746A (ja) * 2006-03-15 2007-09-27 Tokyo Ohka Kogyo Co Ltd 厚膜レジスト膜の形成方法およびレジストパターン形成方法
JP2008235753A (ja) * 2007-03-23 2008-10-02 Sony Corp 固体撮像装置及びその製造方法
JP2009259916A (ja) * 2008-04-14 2009-11-05 Sharp Corp 固体撮像装置の製造方法
JP2011258903A (ja) * 2010-06-11 2011-12-22 Panasonic Corp 固体撮像素子
JP2012137565A (ja) * 2010-12-24 2012-07-19 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜及びパターン形成方法
WO2013133389A1 (fr) * 2012-03-07 2013-09-12 富士フイルム株式会社 Composition colorée, composition photosensible colorée, filtre coloré et dispositif d'affichage à cristaux liquides équipé de celui-ci, dispositif d'affichage électroluminescent organique et capteur d'image à l'état solide
WO2015041114A1 (fr) * 2013-09-17 2015-03-26 富士フイルム株式会社 Composition colorante durcissable, film durci, filtre coloré, procédé pour la fabrication de filtre coloré, élément de prise d'images à semi-conducteurs, dispositif d'affichage d'images et composé de triarylméthane
WO2015098662A1 (fr) * 2013-12-25 2015-07-02 Dic株式会社 Composition de résine, masque de réserve pour gravure à sec et procédé de formation de motifs
JP2016210731A (ja) * 2015-05-11 2016-12-15 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2017504686A (ja) * 2014-01-07 2017-02-09 東洋合成工業株式会社 組成物および部品の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8902522B2 (en) 2009-07-02 2014-12-02 Dongwoo Fine-Chem Co., Ltd. Colored photosensitive resin composition for preparation of color filter of solid-state image sensing device using 300 nm or less ultrashort wave exposure equipment, color filter using same, and solid-state image sensing device containing same
WO2013041114A1 (fr) * 2011-09-21 2013-03-28 Cern - European Organization For Nuclear Research Détecteur monocouche de poursuite 3d à semiconducteurs
JP6205193B2 (ja) * 2012-07-30 2017-09-27 富士フイルム株式会社 着色硬化性組成物、これを用いたカラーフィルタ
JP6043645B2 (ja) * 2013-02-08 2016-12-14 富士フイルム株式会社 硬化性組成物およびカラーフィルタ
JP6097649B2 (ja) * 2013-07-17 2017-03-15 富士フイルム株式会社 半導体製造プロセス用レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、及びレジストパターン形成方法、並びに、電子デバイスの製造方法
KR101966125B1 (ko) * 2014-05-01 2019-04-05 후지필름 가부시키가이샤 착색 조성물, 막, 컬러 필터, 패턴 형성 방법, 컬러 필터의 제조 방법, 고체 촬상 소자 및 적외선 센서
TWI663218B (zh) * 2014-09-04 2019-06-21 日商富士軟片股份有限公司 組成物、組成物的製造方法、硬化性組成物、硬化膜、近紅外線截止濾波器、固體攝像元件、紅外線感測器、照相機模組及化合物
TWI675907B (zh) * 2015-01-21 2019-11-01 日商Ｊｓｒ股份有限公司 固體攝像裝置
TW201628179A (zh) * 2015-01-21 2016-08-01 Jsr 股份有限公司 固體攝像裝置及紅外線吸收性組成物
CN107250314B (zh) * 2015-02-27 2019-11-12 富士胶片株式会社 近红外线吸收组合物、固化膜、近红外线吸收滤波器、固体成像元件及红外线传感器
TWI723994B (zh) * 2015-05-22 2021-04-11 日商富士軟片股份有限公司 著色組成物、膜、彩色濾光片、圖案形成方法、彩色濾光片的製造方法、固體攝像元件及紅外線感測器
JPWO2017104355A1 (ja) * 2015-12-18 2018-09-20 富士フイルム株式会社 レジスト組成物、レジスト膜、マスクブランクス、パターン形成方法、及び電子デバイスの製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005106587A1 (fr) * 2004-04-28 2005-11-10 Tokyo Ohka Kogyo Co., Ltd. Composition de résine positive, procédé pour la fabrication d’un motif de résine et procédé d’implantation ionique
JP2007250746A (ja) * 2006-03-15 2007-09-27 Tokyo Ohka Kogyo Co Ltd 厚膜レジスト膜の形成方法およびレジストパターン形成方法
JP2008235753A (ja) * 2007-03-23 2008-10-02 Sony Corp 固体撮像装置及びその製造方法
JP2009259916A (ja) * 2008-04-14 2009-11-05 Sharp Corp 固体撮像装置の製造方法
JP2011258903A (ja) * 2010-06-11 2011-12-22 Panasonic Corp 固体撮像素子
JP2012137565A (ja) * 2010-12-24 2012-07-19 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜及びパターン形成方法
WO2013133389A1 (fr) * 2012-03-07 2013-09-12 富士フイルム株式会社 Composition colorée, composition photosensible colorée, filtre coloré et dispositif d'affichage à cristaux liquides équipé de celui-ci, dispositif d'affichage électroluminescent organique et capteur d'image à l'état solide
WO2015041114A1 (fr) * 2013-09-17 2015-03-26 富士フイルム株式会社 Composition colorante durcissable, film durci, filtre coloré, procédé pour la fabrication de filtre coloré, élément de prise d'images à semi-conducteurs, dispositif d'affichage d'images et composé de triarylméthane
WO2015098662A1 (fr) * 2013-12-25 2015-07-02 Dic株式会社 Composition de résine, masque de réserve pour gravure à sec et procédé de formation de motifs
JP2017504686A (ja) * 2014-01-07 2017-02-09 東洋合成工業株式会社 組成物および部品の製造方法
JP2016210731A (ja) * 2015-05-11 2016-12-15 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019023671A (ja) * 2017-07-21 2019-02-14 東京応化工業株式会社 感光性組成物、パターン形成方法、硬化物、及び表示装置
JP7051321B2 (ja) 2017-07-21 2022-04-11 東京応化工業株式会社 感光性組成物、パターン形成方法、硬化物、及び表示装置
JP2019045659A (ja) * 2017-08-31 2019-03-22 東京応化工業株式会社 感光性組成物、硬化物形成方法、硬化物、画像表示装置用パネル、及び画像表示装置
JP7079581B2 (ja) 2017-08-31 2022-06-02 東京応化工業株式会社 感光性組成物、硬化物形成方法、硬化物、画像表示装置用パネル、及び画像表示装置
WO2021002902A3 (fr) * 2019-04-01 2021-04-08 BWXT Advanced Technologies LLC Compositions pour la fabrication additive et procédés de fabrication additive, en particulier, de composants de réacteur nucléaire
EP3948897A4 (fr) * 2019-04-01 2023-01-04 BWXT Advance Technologies, LLC Compositions pour la fabrication additive et procédés de fabrication additive, en particulier, de composants de réacteur nucléaire
US11993009B2 (en) 2019-04-01 2024-05-28 BWXT Advanced Technologies LLC Compositions for additive manufacturing and methods of additive manufacturing, particularly of nuclear reactor components
KR20220044580A (ko) * 2019-09-19 2022-04-08 후지필름 가부시키가이샤 착색 조성물, 경화막, 컬러 필터 및 표시 장치
CN114424120A (zh) * 2019-09-19 2022-04-29 富士胶片株式会社 着色组合物、固化膜、滤色器及显示装置
KR102672437B1 (ko) * 2019-09-19 2024-06-07 후지필름 가부시키가이샤 착색 조성물, 경화막, 컬러 필터 및 표시 장치
JP2025009028A (ja) * 2023-07-06 2025-01-20 ａｒｔｉｅｎｃｅ株式会社 赤外線透過型着色組成物、被膜および光半導体装置
JP7662930B2 (ja) 2023-07-06 2025-04-16 ａｒｔｉｅｎｃｅ株式会社 赤外線透過型着色組成物、被膜および光半導体装置

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KR20190138846A (ko) 2019-12-16
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