WO2019001682A1

WO2019001682A1 - Movable masking element

Info

Publication number: WO2019001682A1
Application number: PCT/EP2017/065710
Authority: WO
Inventors: Ralph Lindenberg; Jürgen Grillmayer; Linh Can; John M. White; Markus Hanika
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2017-06-26
Filing date: 2017-06-26
Publication date: 2019-01-03
Anticipated expiration: 2019-12-26
Also published as: KR20200020868A; KR102339795B1; CN110785512A

Abstract

A deposition apparatus is provided. The deposition apparatus includes a first deposition source and a second deposition source configured for depositing material in a substrate receiving area. The deposition apparatus includes a masking element. The masking element is configured for masking a substrate edge region extending in a first direction. The masking element is configured to be moved in at least the first direction to compensate for an accumulation of deposition material on the masking element.

Description

MOVABLE MASKING ELEMENT

FIELD

[0001] Embodiments described herein relate to a deposition apparatus for depositing material on a substrate, more specifically a deposition apparatus including a masking element for masking an edge region of a substrate.

BACKGROUND

[0002] Several methods are known for depositing a material on a substrate. For instance, substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process etc. Typically, the process is performed in a process apparatus or process chamber, where the substrate to be coated is located. A deposition material is provided in the apparatus. In case a PVD process is performed, the deposition material may, e.g., be in the gaseous phase. A plurality of materials may be used for deposition on a substrate. Among them, many different metals can be used, but also oxides, nitrides or carbides. Typically, a PVD process is suitable for thin film coatings.

[0003] Coated materials may be used in several applications and in several technical fields. For instance, an application lies in the field of microelectronics, such as generating semiconductor devices. Also, substrates for displays are often coated by a PVD process. Further applications include insulating panels, organic light emitting diode (OLED) panels, but also hard disks, CDs, DVDs and the like.

[0004] In coating processes, it may be useful to use masks, e.g., in order to better define the area to be coated. In some applications, only parts of the substrate should be coated and the parts not to be coated are covered by a mask. In some applications, such as in large area substrate coating apparatuses, it is desirable to exclude an edge of the substrate from being coated. With the edge exclusion, it is possible to provide coating free substrate edges and to prevent a coating of the backside of the substrate.

[0005] However, a mask in a material deposition process is also exposed to the deposition material due to the location of the mask in front of the substrate. Thus, deposition material accumulates on the surface of the mask during processing. This can result in a modified shape of the mask due to the material deposited on the mask. For instance, the periphery or boundary of a mask aperture may be reduced with a growing deposition material layer on the mask. Often, a cleaning procedure of the mask is performed for assuring the exact dimensions of the area covered by the mask. This cleaning procedure interrupts the material deposition process and is therefore time and cost intensive.

[0006] In view of the above, it is an object of the present disclosure to provide a deposition apparatus and a deposition method which overcome at least some of the problems in the art.

SUMMARY

[0007] According to an embodiment, a deposition apparatus is provided. The deposition apparatus includes a first deposition source and a second deposition source configured for depositing material in a substrate receiving area. The deposition apparatus includes a masking element. The masking element is configured for masking a substrate edge region extending in a first direction. The masking element is configured to be moved in at least the first direction to compensate for an accumulation of deposition material on the masking element.

[0008] According to a further embodiment, a deposition method is provided. The deposition method includes depositing material on a substrate using a first deposition source and a second deposition source. The substrate comprises a substrate edge region extending in a first direction. The deposition method includes masking the substrate edge region using a masking element arranged in a first position. The deposition method includes moving the masking element from the first position to a second position to compensate for an accumulation of deposition material on the masking element, wherein the second position is at a distance from the first position in the first direction.

BRIEF DESCRIPTION OF THE DRAWINGS

[0009] A full and enabling disclosure to one of ordinary skill in the art is set forth more particularly in the remainder of the specification including reference to the accompanying drawings wherein:

Figs, la-c show a deposition apparatus according to embodiments described herein; Figs. 2a-b illustrate a masking element configured to be moved according to embodiments described herein;

Figs. 3a-d illustrate a masking element configured to be moved according to embodiments described herein;

Figs. 4a-b illustrate a masking element configured to be moved according to embodiments described herein;

Figs. 5a-b show a deposition apparatus including a plurality of deposition sources according to embodiments described herein.

DETAILED DESCRIPTION

[0010] Reference will now be made in detail to the various embodiments, one or more examples of which are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to same components. Generally, only the differences with respect to individual embodiments are described. Each example is provided by way of explanation and is not meant as a limitation. Further, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations.

[0011] The term "deposition", as used herein, can refer more specifically to layer deposition. A layer deposition process, or coating process, is a process where a material is deposited on a substrate to form a layer of deposited material on the substrate. A layer deposition process may, for example, refer to a sputtering process, a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, and the like. A layer deposition process may be performed in a process chamber, in particular in a vacuum process chamber, where the substrate to be coated is located.

[0012] According to an embodiment, a deposition apparatus is provided. The deposition apparatus includes a first deposition source and a second deposition source configured for depositing material in a substrate receiving area. The deposition apparatus includes a masking element. The masking element is configured for masking a substrate edge region extending in a first direction. The masking element is configured to be moved in at least the first direction to compensate for an accumulation of deposition material on the masking element.

[0013] Figs, la-c show a deposition apparatus 100 according to embodiments described herein. The exemplary deposition apparatus 100 shown in Figs, la-c is for processing a vertically oriented substrate 160. However, embodiments described herein are not limited to vertically oriented substrates, and other orientations of the substrate 160 can be considered as well according to embodiments described herein.

[0014] Fig. la shows a top view of the deposition apparatus 100. The deposition apparatus 100 includes a first deposition source 110 and a second deposition source 120 for coating a substrate 160 in a substrate receiving area. In the embodiment illustrated in Fig. la, the first deposition source 110 and the second deposition source 120 each include a rotatable target. The first deposition source 110 has a rotation axis 112. The second deposition source 120 has a rotation axis 122. The first deposition source 110 and the second deposition source 120 are not restricted to rotatable targets, and other types of deposition sources can also be considered according to embodiments described herein.

[0015] Fig. la shows a first direction 102. In Fig. la, the first direction 102 is parallel to the plane of the page, as indicated by the double-headed arrow. As shown, the substrate 160 is parallel to the first direction 102.

[0016] Fig. la shows a second direction 104. In Fig. la, the second direction 104 is perpendicular to the plane of the page. As shown, the substrate 160 is parallel to the second direction 104. The rotation axis 112 of the first deposition source 110 and the rotation axis 122 of the second deposition source 120 extend in the second direction 104. In the exemplary embodiment shown in Fig. la, wherein the substrate 160 is vertically oriented, the first direction 102 is a horizontal direction and the second direction 104 is a vertical direction.

[0017] The deposition apparatus 100 shown in Fig. la includes a masking element 150. The masking element 150 is also shown in Fig. lb providing a side view of the deposition apparatus 100. The masking element 150 covers a substrate edge region 162 of the substrate 160 to prevent or reduce material emitted by the first deposition source 110 and/or the second deposition source 120 to be deposited on the substrate edge region 162. [0018] In the side view of Fig. lb, the second direction 104 is parallel to the plane of the page, as indicated by the double-headed arrow, and the first direction 102 is perpendicular to the plane of the page.

[0019] Fig. lc provides a front view of the deposition apparatus 100. For ease of presentation, the first deposition source 110 and the second deposition source 120 of the deposition apparatus 100 are not shown in Fig. lc. As shown in Fig. lc, the substrate edge region 162 extends in the first direction 102. The masking element 150 extends in the first direction 102.

[0020] In the front view of Fig. lc, both the first direction 102 and the second direction 104 are parallel to the plane of the page.

[0021] According to embodiments described herein, the masking element 150 is configured to be moved in at least the first direction 102 to compensate for an accumulation of deposition material on the masking element 150.

[0022] Fig. 2a shows a masking element 150 in a first position 202. The masking element 150 may remain in the first position for a certain period of time, e.g. during part of a deposition cycle. While the masking element 150 is in the first position 202, material is emitted by the first deposition source 110 and the second deposition source 120 (not shown in Fig. 2a) for deposition on the substrate 160. With the masking element 150 in the first position 202, the substrate edge region 162 is masked by the masking element 150.

[0023] As the masking element 150 masks the substrate edge region 162, deposition material emitted by the first deposition source 110 and the second deposition source 120 accumulates on the masking element 150. The growth of deposition material on the masking element 150 affects the effective shape of the masking element 150. For example, a thickness of material formed on an edge portion of the masking element 150 may change the effective shape of such an edge portion. If the masking element 150 were to remain in the first position 202 for a longer period of time, the shape of the region of the substrate 160 masked by the masking element 150 would change in the course of the deposition process due to the accumulation of deposition material deposited on the masking element 150. This could lead, for example, to non-uniformities of the layer deposited on the substrate 160.

[0024] In order to compensate for the accumulation of deposition material on the masking element 150, according to embodiments described herein the masking element 150 is configured to be moved in the first direction 102. The masking element 150 is moved, with respect to the substrate 160, from the first position 202 to a second position 204 as shown in Fig. 2b. The second position 204 is at a distance 220 from the first position 202 in the first direction 102.

[0025] In the exemplary embodiment shown in Figs. 2a-b, the movement from the first position 202 to the second position 204 is a sideward movement in the first direction 102, as indicated by the arrow 292 in Fig. 2a. The movement of the masking element 150 as illustrated in Figs. 2a-b is a movement parallel to the first direction 102. However, the movement of the masking element 150 may also be in a different direction, e.g., an angled direction having both a component along the first direction 102 and a component along the second direction 104, as long as the second position 204 is offset from the first position 202 in the first direction 102.

[0026] Fig. 2b shows the masking element 150 in the second position 204. The masking element 150 in the first position 202 is indicated in Fig. 2b with dashed lines. The masking element 150 is moved from the first position 202 to the second position 204 by a distance 220 in the first direction 102. The masking element 150 in the second position 204 may mask at least part of the substrate edge region 162, as illustrated in Fig. 2b.

[0027] The masking element 150 may remain in the second position 204 for a certain period of time, e.g. for part of a deposition cycle. While the masking element 150 is in the second position 204, material is emitted by the first deposition source 110 and the second deposition source 120 (not shown in Fig. 2b) for deposition on the substrate 160.

[0028] When the masking element 150 is in the first position 202 as shown in Fig. 2a, a region of the masking element 150 directly facing one of the deposition sources, e.g. the first deposition source 110 or the second deposition source 120, may receive deposition material at a higher rate as compared to regions of the masking element 150 which are at a distance from the deposition sources. Accordingly, deposition material may accumulate faster in a region of the masking element 150 directly facing one of the deposition sources as compared to a region of the masking element 150 which is at a distance from the deposition sources. For example, deposition material may accumulate on the masking element 150 according to a deposition profile having one or more peaks at positions facing the deposition sources and having one or more valleys in positions distant from the deposition sources in the first direction. Thereby, the effective shape of the masking element 150, i.e. the shape of the masking element when taking into account the accumulation of deposition material on the masking element 150, varies in a non-uniform manner with respect to the first direction 102. The movement of the masking element 150 from the first position 202 to the second position 204 according to embodiments described herein, wherein the second position 204 is at a distance from the first position 202 in the first direction 102, compensates for the non-uniform accumulation of deposition material on the masking element 150 along the first direction 102.

[0029] In light of the above, embodiments described herein allow for reducing non- uniformities of a layer deposited on the substrate caused by deposition material accumulating on the masking element. An improved layer uniformity, e.g. a uniformity of the layer thickness and/or resistivity, particularly at the substrate edges, is thus provided by embodiments described herein. Since the layer uniformity influences subsequent processes, such as e.g. etching, as well as the performance of the device (e.g. display panel) in which the coated substrate is used, embodiments described herein thus provide for an improved performance of the device. Yet further, embodiments described herein also allow for averaging out the peaks and valleys of a layer of material deposited on the masking element. Accordingly, an increased lifetime of the masking element is provided.

[0030] A masking element 150 according to embodiments described herein is configured for controlling deposition of material on a substrate 160 in a deposition process. A masking element 150 is desirable when a substrate edge region 162 of a substrate 160 should be kept free or substantially free from deposition material. This may be the case when only a defined area of the substrate 160 should be coated due to the later application and/or handling of the coated substrate. For instance, a substrate 160 which will be used as a display part should have predefined dimensions. Large area substrates are coated using masking elements in order to mask a substrate edge region 162 of the substrate and/or to prevent backside coating of the substrate 160. This approach allows for reliable, constant coating on substrates.

[0031] A masking element 150 is adapted for masking a region of a substrate, e.g. a substrate edge region 162. The notion of "masking" a region of a substrate 160 may include reducing and/or hindering a deposition of material on the region of the substrate 160.

[0032] According to embodiments, a masking element 150 may be or include a piece of mask material, such as a carbon fiber material or a metal like aluminium, titan, stainless steel, Invar or the like. [0033] According to embodiments, which can be combined with other embodiments described herein, a masking element 150 may be or include an edge exclusion mask or a portion thereof. An edge exclusion mask may be composed of several parts or portions, which can form a frame. The frame of a mask may again have several frame portions or frame parts. This may be advantageous as frames assembled from different parts are believed to be more cost efficient to produce than integral frames. A masking element 150 according to embodiments described herein may refer to an edge exclusion mask or to a portion thereof, e.g. a frame portion of an edge exclusion mask. A masking element 150, e.g. a frame portion of an edge exclusion mask, may be configured to move independently of other parts, e.g. other frame portions, of the edge exclusion mask.

[0034] According to embodiments, which can be combined with other embodiments described herein, a masking element 150 may be configured for masking a substrate edge region 162 extending in a first direction 102. A masking element 150 may extend in the first direction 102. A masking element 150 may have an elongated shape. For example, a masking element 150 may be an elongated element extending in the first direction 102 and having a first end and a second end. A masking element 150 may have a length and a width, wherein the length is much larger than the width. The first direction 102 may be a longitudinal direction, e.g. a lengthwise direction, of the masking element 150. The length of the masking element 150 in the first direction 102 may be much larger than a width of the masking element 150, e.g. a width in the second direction 104.

[0035] A substrate edge region, e.g. substrate edge region 162, refers to a thin, peripheral area of a substrate. A substrate edge region may have a length and a width, wherein the length of the substrate edge region may be much larger than the width of the substrate edge region. A substrate edge region may extend in the first direction 102. A substrate edge region may have a length in the first direction 102 which is much larger than a width of the substrate edge region, e.g. a width in the second direction 104. A substrate edge region may be arranged at a single side of a substrate.

[0036] According to embodiments, which can be combined with other embodiments described herein, a substrate edge region of a substrate may have an area of about 5% or less of the area of the substrate 160, more particularly about 2% or less, still more particularly between about 1 %o to about 2% of the area of the substrate. [0037] According to embodiments, which be combined with other embodiments described herein, a width of a substrate edge region may be 8 mm or less, more particularly 6 mm or less. The width of a substrate edge region may be symmetrical along the length of the substrate in the first direction 102, but may also vary along such length, depending on the application for which the substrate 160 is considered. For example, the width of a substrate edge region at a middle portion of the substrate edge region may be from 3 mm to 6 mm. The width of the substrate edge region at a corner area of the substrate edge region may, e.g., be from 0 mm to 6 mm.

[0038] According to embodiments, which can be combined with other embodiments described herein, a length of a substrate edge region in the first direction 102 may be equal to the length of the substrate in the first direction 102. A masking element 150 may be configured for masking a substrate edge region extending along the entire length of the substrate 160 in the first direction 102. Such an embodiment is illustrated in Fig. lc.

[0039] Alternatively, a length of a substrate edge region in the first direction 102 may be smaller than the length of the substrate in the first direction 102. A masking element may be configured for masking a substrate edge region extending over part of the length of the substrate in the first direction 102. A masking element may be configured for masking one or more sections or portions of a substrate edge, possibly depending on the product functionality or manufacturing process. A length of a substrate edge region masked by a masking element 150 may be from 80 % to 100%, particularly from 90 % to 100%, of a length of the substrate 160 in the first direction 102.

[0040] Figs. 3a-d show a deposition apparatus 100 according to embodiments described herein.

[0041] Fig. 3a shows a masking element 150 in a first position 202 at an initial stage of a deposition process. No material has been deposited yet on the masking element 150 shown in Fig. 3a.

[0042] Fig. 3b shows the masking element 150 in the first position 202 at a later stage of the deposition process as compared to Fig. 3a. A layer of deposition material 300 has accumulated on the masking element 150. The deposition material on the masking element 150 includes peaks 310 and 320 at positions facing the first deposition source 110 and the second deposition source 120, respectively. Valleys in the layer of deposition material 300 may be formed at locations at a distance from the deposition sources in the first direction 102. For example, valley 330 is formed in a location between the first deposition source 110 and the second deposition source 120.

[0043] Fig. 3c shows the masking element 150 in the second position 204 shortly after the masking element 150 has been moved from the first position 202 to the second position 204. In the exemplary embodiment, the distance 220 between the first position 202 and the second position 204 is about 1/2 of the distance 350 between the first deposition source 110 and the second deposition source 120. The peaks 310 and 320 no longer face the deposition sources, but are located in positions distanced from the deposition sources in the first direction 102. For example, peak 310 is in a location between the first deposition source 110 and the second deposition source 120. In turn, valley 330 faces the second deposition source 120. As material continues to be deposited on the masking element 150 in the second position 204, deposition material may accumulate faster in regions of the masking element 150 facing the deposition sources, e.g. valley 330, as compared to regions of the masking element 150 further removed from the deposition sources, e.g. peaks 310 and 320.

[0044] Fig. 3d shows the masking element 150 in the second position 204 at a later stage of the deposition process as compared to Fig. 3c. As shown, the thickness of the layer of deposition material 300 deposited on the masking element 150 is substantially averaged out, i.e. uniform, along the first direction 102. Accordingly, the non-uniform deposition profile including peaks and valleys as shown in Figs. 3b-c has been compensated by moving the masking element 150 from the first position 202 to the second position 204.

[0045] According to embodiments, which can be combined with other embodiments described herein, a masking element 150 may be configured to be moved in the first direction 102 to compensate, e.g. average out, a deposition profile of material deposited on the masking element 150. The deposition profile may include one or more peaks and one or more valleys.

[0046] For example, in a system wherein a mask is not moved in the first direction 102, the peaks of a deposition profile on the mask at full target life may have a maximum thickness, for example, of about 60 mm. The valleys of the deposition profile at full target life may have a minimum thickness, e.g., of about 45 mm. In contrast, where a masking element 150 is moved in the first direction 102 according to embodiments described herein, e.g. a movement by a distance of about 50% of the distance 350 or pitch between the deposition sources, the thickness of the deposition material accumulating on the masking element 150 may be averaged out, for example to about 52.5 mm. The peak thickness of the material deposited on the masking element 150 is thus reduced. Thereby, the layer uniformity of the layer deposited on the substrate is improved. In addition, the minimum-to-maximum deposition thickness ratio can be increased. Still further, the lifetime of the masking element is increased, e.g. an increase in lifetime of 14% or more can be provided for by embodiments described herein.

[0047] According to embodiments, which can be combined with other embodiments described herein, the masking element 150 may be configured to be moved in the first direction 102 by a distance depending on the distance 350 between the first deposition source 110 and the second deposition source 120.

[0048] According to embodiments, which can be combined with other embodiments described herein, the first deposition source 110 is arranged at a first distance, e.g. distance 350 shown in Figs. 3a-d, from the second deposition source 120. The first distance may be a distance in the first direction 102. The masking element 150 may be configured to be moved by a second distance, e.g. distance 220 shown in Fig. 3c, in the first direction 102. The second distance may be from 30% to 70%, more particularly from 40% to 60%, e.g. 50 %, of the first distance. As the second distance gets closer to 50% of the first distance, the effect of averaging out the peaks and valleys of the deposition profile on the masking element 150 is further enhanced. According to embodiments, the second distance may depend or be determined by a minimum required distance from a deposition source to the adjacent deposition sources or to other parts in the system that may influence the functionality of the deposition sources or other parts.

[0049] According to embodiments, which can be combined with other embodiments described herein, the first distance, e.g. distance 350, between the first deposition source 110 and the second deposition source 120 is from 250 to 350 mm, more particularly from 280 to 320 mm, e.g. about 300 mm.

[0050] As illustrated in Figs. 3a-d, the first distance between the first deposition source 110 and the second deposition source 120 may be a distance 350 from a center of the first deposition source 110 to a center of the second deposition source 120. The first distance may be a distance 350 from a center axis or rotation axis of the first deposition source 110 to a center axis or rotation axis of the second deposition source 120. The center-to-center distance may depend on a dimension, e.g. width, of the deposition sources in the first direction. The distance from a periphery of the first deposition source to a periphery of the second deposition source may be from about 0 to 3 mm up to several hundred mm, particularly from 0 mm to 300 mm, more particularly from 3 mm to 300 mm. The distance from a periphery of the first or deposition source to an adjacent part that may influence the sources can be in the same ranges.

[0051] According to embodiments, which can be combined with other embodiments described herein, a masking element 150 is configured to be moved in at least a second direction 104 to compensate for an accumulation of deposition material on the masking element 150.

[0052] Figs. 4a-b show a deposition apparatus 100 according to embodiments described herein. The first deposition source 110 and the second deposition source 120 are not shown for ease of presentation. The masking element 150 shown in Figs. 4a-b is configured to be moved in a first direction 102 and in a second direction 104 to compensate for an accumulation of deposition material on the masking element 150.

[0053] Fig. 4a shows the masking element 150 in a first position 202. Fig. 4b shows the masking element 150 in a second position 204. The second position 204 is at a distance 220 from the first position 202 in the first direction 102. The second position is at a distance 420 from the first position 202 in the second direction 104. As compared to the masking element 150 in the first position 202, the masking element 150 shown in Fig. 4b has been moved sideward (in the first direction 102) and upward (in the second direction 104).

[0054] The deposition apparatus 100 shown in Figs. 4a-b includes an actuator 410 for moving the masking element 150 in the first direction 102 and the second direction 104.

[0055] According to embodiments described herein, a movement of the masking element 150 in the second direction 104 is undertaken for compensating an accumulation of deposition material on the masking element 150. While the masking element 150 is in the first position 202 as shown in Fig. 4a, deposition material emitted by the first deposition source 110 and the second deposition source 120 accumulates on the masking element 150. The growth of deposition material on the masking element 150 affects the effective shape of the masking element 150. For example, a thickness of material formed on the edge of the masking element 150 may increase the effective width of the masking element 150 in the second direction 104. By moving the masking element 150 from the first position 202 to the second position 204, wherein the second position is at a distance 420 from the first position 202 in the second direction 104, the increasing effective width of the masking element 150 can be compensated. Accordingly, it can be ensured that the width of the region of the substrate 160 masked by the masking element 150 stays substantially constant as a thickness of deposition material accumulates on the edge of the masking element 150.

[0056] According to embodiments, which can be combined with other embodiments described herein, a masking element 150 may be configured to be moved in the second direction 104 by a distance from 0 mm to 30 mm, particularly from 10 to 30 mm, more particularly 15 to 30 mm, e.g. about 20 mm. A masking element 150 may be configured to be moved in the second direction 104 in a range from 0.03% to 3%, more particularly from 0.2% to 2%, e.g. from 0.5% to 1% of an edge length of the substrate 160 in the first direction 102.

[0057] A movement of the masking element 150 in the second direction 104 may be an outward movement with respect to the substrate 160 or substrate receiving area.

[0058] According to embodiments, which can be combined with other embodiments described herein, a masking element 150 may be configured to be moved incrementally in the second direction 104, e.g. several microns every minute.

[0059] According to embodiments, which can be combined with other embodiments described herein, a movement of a masking element 150 from a first position to a second position 204 may include a first movement from the first position 202 to an intermediate position and/or a second movement from the intermediate position to the second position 204. The first movement may be substantially parallel to the first direction 102 and the second movement may be substantially parallel to the second direction 104 or vice versa. Alternatively or additionally, a movement of the masking element 150 from the first position 202 to the second position 204 may include a movement along an angled direction. An angled direction, or diagonal direction, may be at an angle with respect to the first direction 102 and with respect to the second direction 104.

[0060] For example, the masking element 150 shown in Figs. 4a-b may be moved from the first position 202 to the second position 204 by moving the masking element 150 along an angled direction, or diagonal direction, as indicated by the diagonally oriented arrow 490. Alternatively, the masking element 150 may be moved from the first position 202 to the second position 204, e.g., by first moving the masking element 150 toward the right along a straight line parallel the first direction 102, followed by an upward movement along a straight line parallel to the second direction 104, or vice versa. As a further option, the masking element 150 may move from the first position 202 to the second position 204 by a combination of the previous alternatives.

[0061] According to embodiments, which can be combined with other embodiments described herein, a movement of the masking element 150, e.g. in the first direction 102 and/or the second direction 104, is undertaken while material is deposited on the substrate 160 and/or on the masking element 150.

[0062] According to embodiments, which can be combined with other embodiments described herein, a masking element 150 may be moved with respect to the substrate 160. The substrate 160 may be held in a substantially fixed position while the masking element 150 is moved.

[0063] According to embodiments, which can be combined with other embodiments described herein, a masking element 150 may be moved with respect to the first deposition source 110, the second deposition source 120 and/or any further deposition source of the deposition apparatus 100. A deposition source may be held in a substantially fixed position while the masking element 150 is moved.

[0064] According to embodiments, which can be combined with other embodiments described herein, a masking element 150 may be moved in a plane parallel or substantially parallel to a substrate 160 or substrate receiving area. Two planes may be considered substantially parallel when there is a small angle from 0 to 15°, more particularly 0 to 10°, between the two planes.

[0065] According to embodiments, which can be combined with other embodiments described herein, a movement of a masking element 150, e.g. in the first direction 102 and or the second direction 104, is a translational movement.

[0066] According to embodiments described herein, a masking element is moved, e.g. in a first direction 102 and/or second direction 104, to compensate for an accumulation of deposition material on the masking element 150. Such type of movement is generally different from a movement of a masking element 150 undertaken for the mere purpose of aligning the masking element 150, e.g. alignment with respect to the substrate 160. In particular, a movement of the masking element 150 for the purpose of alignment may be undertaken irrespective of the amount of deposition material that has been deposited on the masking element 150. In contrast, according to embodiments described herein, the movement of the masking element 150 depends on the accumulation of deposition material on the masking element 150 during the deposition process, and the masking element 150 is moved to compensate such accumulation.

[0067] According to embodiments, which may be combined with other embodiments described herein, the first direction 102 may be parallel or substantially parallel to a substrate 160 or substrate receiving area. The notion "substantially parallel" may include a first direction 102 being at a small angle with respect to the substrate or substrate receiving area, wherein the angle may be from 0 degrees to 15 degrees, more particularly from 0 degrees to 10 degrees.

[0068] In embodiments wherein the substrate is substantially vertically oriented in the deposition process, the first direction may be a substantially horizontal direction. A substantially horizontal direction may include a direction which is at an angle from 75 degrees to 90 degrees, more particularly from 80 degrees to 90 degrees, with respect to a vertical direction.

[0069] According to embodiments, which can be combined with embodiments described herein, a deposition source, such as e.g. the first deposition source 110 and/or the second deposition source 120, may extend in the second direction 104. The first deposition source 110, the second deposition source 120 and/or any further deposition source may have an elongated shape, e.g. a substantially cylindrical shape. The elongated shape may extend in the second direction. The first deposition source 110, the second deposition source 120 and/or any further deposition source may include a longitudinal axis, e.g. rotation axis. The longitudinal axis or rotation axis may extend in the second direction 104.

[0070] The second direction 104 is different from the first direction 102. The second direction 104 may be perpendicular or substantially perpendicular to the first direction 102. Two directions which are substantially perpendicular may include directions which are at an angle from 75 degrees to 90 degrees, more particularly from 80 degrees to 90 degrees.

[0071] The second direction 104 may be parallel or substantially parallel to a substrate or substrate receiving area of the deposition apparatus.

[0072] In embodiments wherein the substrate is substantially vertically oriented in the deposition process, the second direction 104 may be a substantially vertical direction. A substantially vertical direction may include a direction which deviates from exact verticality by a small angle, e.g. an angle from 0 degrees to 15 degrees, particularly an angle from 0 degrees to 10 degrees.

[0073] According to embodiments, which can be combined with other embodiments described herein, a deposition apparatus 100 may include 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 16 or even more deposition sources.

[0074] Figs. 5a-b show a deposition apparatus 100 according to embodiments described herein. The exemplary deposition apparatus 100 shown in Figs. 5a-b includes a deposition array including six deposition sources 110, 120, 530, 540, 550 and 560. Each of the deposition sources has a rotation axis extending in the second direction 104. The deposition array has a pitch 510.

[0075] A pitch of a deposition array may refer to a distance, particularly a distance in the first direction 102, between adjacent deposition sources of the deposition array. More specifically, a pitch of the deposition array may refer to a distance between rotation axes of adjacent deposition sources of the deposition array.

[0076] Fig. 5a shows the masking element in the first position 202. Fig. 5b shows the masking element 150 in the second position 204. The second position 204 is at a distance 220 from the first position 202 in the first direction 102. The distance 220 may be, e.g., about 50% of the pitch 510. By moving the masking element 150 from the first position 202 to the second position 204, peaks of deposition material deposited on the masking element 150 may be shifted to locations between adjacent deposition sources of the deposition array. Accordingly, as discussed above, the movement from the first position 202 to the second position 204 allows for averaging out the deposition profile of the deposition material accumulating on the masking element 150.

[0077] According to embodiments, which can be combined with other embodiments described herein, a deposition apparatus 100 may include a plurality of deposition sources for depositing material in a substrate receiving area. The plurality of deposition sources may be arranged on a same side of the substrate or substrate receiving area.

[0078] A plurality of deposition sources may include the first deposition source 110, the second deposition source 120, a third deposition source, optionally a fourth deposition source, and optionally even more deposition sources. Adjacent deposition sources of the plurality of deposition sources may be arranged at a substantially constant distance from each other in the first direction 102.

[0079] A plurality of deposition sources may be a deposition array. The first distance between the first deposition source 110 and the second deposition source 120, such as e.g. distance 350 shown in Figs. 3a-d, may be equal to the pitch of the deposition array, e.g. pitch 510 shown in Figs. 5a-b.

[0080] According to embodiments, which can be combined with other embodiments described herein, a masking element 150 is configured to be moved from a first position 202 to a second position 204, wherein a distance from the first position to the second positon in the first direction 102 is from 30% to 70%, more particularly 40% to 60%, e.g. about 50%, of a pitch of the deposition array.

[0081] According to embodiments, which can be combined with other embodiments described herein, the pitch of a deposition array may be from 250 mm to 350 mm, more particularly from 280 mm to 320 mm, e.g. about 300 mm. Embodiments described herein thereby provide for a pitch which is higher than for systems known in the art. As the pitch is higher, a sputter coil overlap is reduced. Accordingly, the maximum height of the peaks of a deposition profile of material deposited on the masking element can be further reduced. In turn, this increases the lifetime of the masking element.

[0082] According to embodiments, which can be combined with other embodiments described herein, a deposition apparatus may include one or more actuators, e.g. actuator 410, for moving the masking element. The one or more actuators may be configured for moving the masking element 150 in the first direction 102 and/or in the second direction 104. The one or more actuators may be connected to the masking element 150. An actuator may include, e.g., a motor or a linear actuator. A deposition apparatus 100 according to embodiments described herein may include one or more power supplies for providing power to the one or more actuators, a movement controller and/or means for receiving a signal for triggering the movement of the masking element.

[0083] According to embodiments, which can be combined with other embodiments described herein, a deposition apparatus may include a control unit for controlling the movement of the masking element 150. [0084] A control unit may be configured for controlling one or more actuators according to embodiments described herein.

[0085] A control unit may be configured for controlling the movement of the masking element 150 in the first direction 102 and/or the second direction 104 depending on a characteristic of the deposition material deposited on the masking element 150.

[0086] According to embodiments, which can be combined with other embodiments described herein, a masking element 150 may be moved, e.g. under the control of a control unit, after a predetermined time period of depositing material. The velocity of driving the masking element 150, or the moment in time at which the masking element 150 is moved, may be calculated by a control unit based on a predetermined deposition rate and/or on measured data. For instance, the parameters of a certain process may be used to determine the deposition rate on the masking element 150 and, thus, e.g., the velocity with which the masking element 150 is to be moved. A look-up table may be used to determine, e.g., the speed of the movement of the masking element 150 or the moment in time at which the masking element 150 is to be moved.

[0087] According to embodiments, which can be combined with other embodiments described herein, the movement of a masking element 150 may be controlled based on measurements of the deposited material layer on the masking element 150. A deposition apparatus 100 may include one or more sensors for measuring an amount or deposition profile of deposited material on the masking element 150. For instance, a characteristic, such as the thickness of the material layer on the masking element, may be measured and the movement of the masking element may be controlled by a control unit based on the measurement. A control unit may include one or more look-up tables for controlling the movement of the masking element in the first direction 102 and/or second direction 104.

[0088] According to embodiments, which can be combined with other embodiments described herein, a deposition source of the deposition apparatus 100 may be adapted for performing, for example, a sputtering process, a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, and the like.

[0089] According to embodiments, which can be combined with other embodiments described herein, the first deposition source 110, the second deposition source 120 and/or any further deposition source described herein may be configured for vacuum deposition. A deposition apparatus 100 may be a vacuum deposition apparatus. A deposition source may be arranged in a vacuum processing chamber.

[0090] According to embodiments, which can be combined with other embodiments described herein, a deposition source may be or include a cathode assembly. A deposition source may include a target, particularly a rotatable target. A rotatable target may be rotatable around a rotation axis of the deposition source, e.g. a rotation axis 112 of the first deposition source 110 as shown in Fig. la. A rotatable target may have a curved surface, for example a cylindrical surface. The rotatable target may be rotated around the rotation axis being the axis of a cylinder or a tube. A rotatable target may include a backing tube. A target material forming the target, which may contain the material to be deposited onto a substrate during a coating process, may be mounted on the backing tube.

[0091] According to embodiments, which can be combined with other embodiments described herein, the first deposition source 110, the second deposition source 120 and/or any further deposition source may each include a rotatable target having a rotation axis extending in the second direction 104.

[0092] A deposition source may include a magnet assembly. A magnet assembly may be arranged in a rotatable target of the deposition source. A magnet assembly may be arranged so that the target material sputtered by the deposition source is sputtered towards a substrate. A magnet assembly may generate a magnetic field. The magnetic field may cause one or more plasma regions to be formed near the magnetic field during a sputter deposition process. The position of the magnet assembly within a rotatable target affects the direction in which target material is sputtered away from the cathode assembly during a sputter deposition process.

[0093] According to a further embodiment, a deposition method is provided. The deposition method includes depositing material on a substrate 160 using a first deposition source 110 and a second deposition source 120. The substrate 160 includes a substrate edge region 162 extending in a first direction 102. The method includes masking the substrate edge region 162 using a masking element 150 arranged in a first position 202. The method includes moving the masking element 150 from the first position 202 to a second position 204 to compensate for an accumulation of deposition material on the masking element 150. The second position 204 is at a distance from the first position 202 in the first direction 102. [0094] According to embodiments, which can be combined with other embodiments described herein, the first deposition source 110 may be arranged at a first distance from the second deposition source 120, e.g. distance 350. The masking element 150 may be moved from the first position 202 to the second position 204 by a second distance, e.g. distance 220, in the first direction 102. The second distance may be from 30% to 70%, more particularly from 40% to 60%, e.g. 50 %, of the first distance.

[0095] According to embodiments, which can be combined with other embodiments described herein, the masking element 150 may be moved from the first position 202 to the second position 204 to compensate for a deposition profile of material deposited on the masking element 150. The deposition profile may include one or more peaks and one or more valleys. Before, e.g. directly before, the masking element is moved from the first position 202 to the second position 204, the deposition profile may include a first peak facing the first deposition source, a second peak facing the second deposition source and/or a first valley facing a location between the first and the second deposition source. After, e.g. directly after, the masking element 150 is moved from the first position 202 to the second position 204, the first valley may face the first deposition source or the second deposition source. The first peak and/or the second peak may be in a location at a distance, in the first direction, from the first deposition source and the second deposition source.

[0096] According to embodiments, which can be combined with other embodiments described herein, the second position 204 is at a distance from the first position 202 in the second direction 104.

[0097] According to embodiments, which can be combined with other embodiments described herein, a deposition method may include masking at least a portion of the substrate edge region 162 using the masking element 150 arranged in the second position 204.

[0098] For example, only a portion of the substrate edge region 162 may be masked by the masking element 150 in the second position 204. The region of the substrate 160 masked by the masking element in the second position 204 may be a further substrate edge region different from the substrate edge region 162 masked by the masking element 150 in the first position 202. For example, a length of the further substrate edge region in the first direction 102 may be equal to the length of the substrate 160 in the first direction 102. Alternatively, a length of the further substrate edge region in the first direction 102 may be smaller than the length of the substrate 160 in the first direction 102. [0099] Alternatively, the entire substrate edge region 162 may be masked by the masking element 150 arranged in the second position 204. The region of the substrate 160 masked by the masking element 150 in the second position 204 may be the same or substantially the same as the region of the substrate 160 masked by the masking element 150 in the first position 202.

[00100] According to embodiments, which can be combined with other embodiments described herein, a deposition method may include moving the masking element 150 from the second position 204 to a third position to compensate for an accumulation of deposition material on the masking element 150. The third position may be at a distance from the second position 204 in the first direction 102 and/or in the second direction 104. The distance in the first direction 102 may be from 30% to 70%, more particularly from 40% to 60%, e.g. 50 %, of the first distance between the first deposition source band the second deposition source.

[00101] According to embodiments, which can be combined with other embodiments described herein, a substrate is a large area substrate.

[00102] The term "substrate" as used herein embraces both inflexible substrates, e.g., a glass substrate, a wafer, slices of transparent crystal such as sapphire or the like, or a glass plate, and flexible substrates, such as a web or a foil. According to some embodiments, which can be combined with other embodiments described herein, embodiments described herein can be utilized for Display PVD, i.e. sputter deposition on large area substrates for the display market. According to some embodiments, large area substrates or respective carriers, wherein the carriers may carry one substrate or a plurality of substrates, may have a size of at least 0.67 m². The size may be from about 0.67m² (0.73x0.92m - Gen 4.5) to about 8 m², more specifically from about 2 m² to about 9 m² or even up to 12 m². The substrates or carriers, for which the structures, apparatuses, such as cathode assemblies, and methods according to embodiments described herein are provided, can be large area substrates as described herein. For instance, a large area substrate or carrier can be GEN 4.5, which corresponds to about 0.67 m² substrates (0.73x0.92m), GEN 5, which corresponds to about 1.4 m² substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m² substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m² substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m² substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented. [00103] According to embodiments, which may be combined with other embodiments described herein, a deposition apparatus may include a substrate receiving area for receiving a substrate. A substrate receiving area may have a size and/or shape corresponding to a size and/or shape of a substrate considered according to embodiments described herein.

[00104] According to embodiments, which can be combined with other embodiments described herein, a deposition method is a static deposition method.

[00105] The distinction between static deposition and dynamic deposition is the following, and applies particularly for large area substrate processing, such as processing of vertically oriented large area substrates. A dynamic sputtering is an inline process where the substrate moves continuously or quasi-continuously adjacent to the deposition source. Dynamic sputtering has the advantage that the sputtering process can be stabilized prior to the substrates moving into a deposition area, and then held constant as substrates pass by the deposition source. Yet, a dynamic deposition can have disadvantages, e.g. with respect to particle generation. This might particularly apply for TFT backplane deposition. It should be noted that the term static deposition process, which is different as compared to dynamic deposition processes, does not exclude every movement of the substrate as would be appreciated by a skilled person. A static deposition process can include, for example, a static substrate position during deposition, an oscillating substrate position during deposition, an average substrate position that is essentially constant during deposition, a dithering substrate position during deposition, a wobbling substrate position during deposition, or a combination thereof. Accordingly, a static deposition process can be understood as a deposition process with a static position, a deposition process with an essentially static position, or a deposition process with a partially static position of the substrate. Thereby, a static deposition process, as described herein, can be clearly distinguished from a dynamic deposition process without the necessity that the substrate position for the static deposition process is fully without any movement of the substrate or of the cathode assemblies during deposition.

[00106] While the foregoing is directed to embodiments of the disclosure, other and further embodiments may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

CLAIMS:

1. A deposition apparatus (100), comprising: a first deposition source (110) and a second deposition source (120) configured for depositing material in a substrate receiving area; and a masking element (150), wherein the masking element is configured for masking a substrate edge region (162) extending in a first direction (102), and wherein the masking element is configured to be moved in at least the first direction to compensate for an accumulation of deposition material on the masking element.

2. The deposition apparatus of claim 1, wherein the first deposition source is arranged at a first distance (350) from the second deposition source, wherein the masking element is configured to be moved by a second distance (220) in the first direction to compensate for an accumulation of deposition material on the masking element, wherein the second distance is from 30% to 70% of the first distance.

3. The deposition apparatus of claim 1 or claim 2, further comprising one or more actuators (410) for moving the masking element in at least the first direction.

4. The deposition apparatus of claim 1 or claim 2, wherein the masking element is an elongated element overlapping with an edge of the substrate receiving area extending in the first direction, and wherein the deposition apparatus comprises one or more actuators (410) connected to the elongate element for moving the elongate element in at least the first direction.

5. The deposition apparatus of any of claims 1 to 4, further comprising a control unit for controlling the movement of the masking element in the first direction depending on a characteristic of the deposition material deposited on the masking element.

6. The deposition apparatus of any of claims 1 to 5, wherein the first deposition source and the second deposition source extend in a second direction, particularly wherein the second direction is substantially perpendicular to the first direction.

7. The deposition apparatus of any of claims 1 to 5, wherein the first deposition source and the second deposition source each include a rotatable target having a rotation axis (112, 122) extending in a second direction (104), particularly wherein the second direction is substantially perpendicular to the first direction.

8. The deposition apparatus of claim 6 or claim 7, wherein the masking element is configured to be moved in at least the second direction to compensate for an accumulation of deposition material on the masking element.

9. The deposition apparatus of any of claims 1 to 8, comprising an array of deposition sources (110, 120, 530, 540, 550, 560) having a pitch (510) between adjacent deposition sources of the array, wherein the masking element is configured to be moved from a first position (202) to a second position (204), wherein a distance (220) from the first position to the second positon in the first direction is from 30% to 70% of the pitch.

10. A deposition method, comprising: depositing material on a substrate (160) using a first deposition source (110) and a second deposition source (120), wherein the substrate comprises a substrate edge region (162) extending in a first direction (102); masking the substrate edge region using a masking element (150) arranged in a first position (202); and moving the masking element from the first position to a second position (204) to compensate for an accumulation of deposition material on the masking element, wherein the second position is at a distance (220) from the first position in the first direction.

11. The deposition method of claim 10, wherein the first deposition source is arranged at a first distance (350) from the second deposition source, wherein the masking element is moved from the first position to the second position by a second distance (220) in the first direction, wherein the second distance is from 30% to 70% of the first distance.

12. The deposition method of claim 10 or claim 11, wherein the masking element is moved from the first position to the second position to compensate for a deposition profile of material deposited on the masking element, wherein the deposition profile includes one or more peaks (310, 320) and one or more valleys (330).

13. The deposition method of any of claims 10 to 12, wherein the second position is at a distance (420) from the first position in a second direction (104), particularly wherein the second direction is substantially perpendicular to the first direction.

14. The deposition method of any of claims 10 to 13, further comprising masking at least a portion of the substrate edge region using the masking element arranged in the second position.

15. The deposition method of any of claims 10 to 14, wherein the deposition method is a static deposition method.