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WO2019098101A1 - Procédé de production de dispositif semi-conducteur - Google Patents

Procédé de production de dispositif semi-conducteur Download PDF

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Publication number
WO2019098101A1
WO2019098101A1 PCT/JP2018/041296 JP2018041296W WO2019098101A1 WO 2019098101 A1 WO2019098101 A1 WO 2019098101A1 JP 2018041296 W JP2018041296 W JP 2018041296W WO 2019098101 A1 WO2019098101 A1 WO 2019098101A1
Authority
WO
WIPO (PCT)
Prior art keywords
pressure
sensitive adhesive
adhesive sheet
adhesive layer
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/041296
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English (en)
Japanese (ja)
Inventor
岡本　直也
高志 阿久津
忠知 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lintec Corp
Original Assignee
Lintec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lintec Corp filed Critical Lintec Corp
Priority to CN201880070770.XA priority Critical patent/CN111295739B/zh
Priority to JP2019554181A priority patent/JP7185637B2/ja
Priority to KR1020207006569A priority patent/KR102507691B1/ko
Publication of WO2019098101A1 publication Critical patent/WO2019098101A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting

Definitions

  • the present invention relates to a method of manufacturing a semiconductor device.
  • CSP Chip Scale Package
  • WLP and PLP are classified into fan-in type and fan-out type.
  • the semiconductor chip is covered with a sealing material so as to be a region larger than the chip size and the semiconductor chip
  • the rewiring layer and the external electrode are formed not only on the circuit surface of the semiconductor chip but also on the surface area of the sealing material.
  • a plurality of semiconductor chips separated from a semiconductor wafer are left surrounding the circuit forming surface, and an expansion wafer is formed using a mold member to form an expanded wafer, and the semiconductor chip is formed outside the semiconductor chip.
  • a method of manufacturing a semiconductor package formed by extending a rewiring pattern is described.
  • a semiconductor wafer is subjected to a dicing step in which it is singulated in a state of being attached to a wafer mount tape for dicing (hereinafter, also referred to as "dicing tape").
  • the plurality of semiconductor chips obtained in the dicing step are transferred to a wafer mount tape for expansion (hereinafter also referred to as "expand tape”), and the expanded tape is expanded to expand the distance between the plurality of semiconductor chips.
  • An expanding process is performed.
  • the expand tape is used to widen the distance between chips obtained by dicing the workpiece in the manufacturing process of the semiconductor device, and in addition to the above semiconductor chip, for example, an LED ( It can also be used to widen the distance between chips obtained by dicing a light emitting diode), a micro electro mechanical system (MEMS), a ceramic device, a semiconductor package, a semiconductor device having a plurality of devices, and the like.
  • the plurality of chips spaced apart on the expanding tape need to be separated from the expanding tape to be subjected to the next step.
  • the semiconductor chip subjected to the expanding step is then subjected to a step of being sealed by a sealing resin, but since the sealing resin is usually a thermosetting resin, the sealing is usually performed.
  • the semiconductor chip is preferably moved to a pressure-sensitive adhesive sheet (hereinafter, also referred to as a “temporarily fixing sheet”) which is more heat resistant than the expand tape.
  • a method of transferring the chip to another adhesive sheet such as a temporary fixing sheet may be a method of transferring the expanded tape directly to another adhesive sheet, or the chip may be separated once from the expanded tape. It may be a method of transferring to another adhesive sheet after being subjected to the rearrangement step of aligning. Since the expand tape is separated from the chip after expanding the distance between the chips, an energy ray curable adhesive or the like is used which is cured by energy ray irradiation to reduce the adhesive force.
  • Expandable tapes using an energy ray-curable adhesive can reduce the adhesive force by energy ray irradiation, but the chip and the adhesive layer adhere to each other over the entire adhesive surface even after energy ray irradiation, so some extent Adhesive strength remains. Therefore, when separating the chips from the expand tape, it is necessary to pick up the chips one by one or to transfer them to the adhesive sheet at one time. For example, in the case of using the above-described rearrangement step, it is difficult to move the singulated chips at once to the arrangement jig, so it is necessary to pick up the chips one by one. It is complicated and inferior in productivity.
  • the present invention has been made in view of the above-mentioned problems, and it is possible to easily separate chips from the expanded tape together from the expanded tape while keeping the intervals, and separating the chips whose intervals are expanded by the expanding step. It is an object of the present invention to provide a method of manufacturing a semiconductor device in which the chip can be easily subjected to the next step.
  • the present inventors are a method of manufacturing a semiconductor device using an expandable pressure-sensitive adhesive sheet having a substrate including expandable particles and a pressure-sensitive adhesive layer, which comprises specific steps (1) to (3) in this order. It has been found that the above problem can be solved by a manufacturing method in which the expandable particles of the pressure-sensitive adhesive sheet are expanded after the step (3) to separate the pressure-sensitive adhesive sheet from the adherend. That is, the present invention relates to the following [1] to [10].
  • Process (2) The process of sticking the adhesive layer (X1) of an adhesive sheet (A) on the surface on the opposite side to the surface which contact
  • the expandable particles are thermally expandable particles having an expansion start temperature (t) of 60 to 270 ° C., and the thermally expandable particles are obtained by heating the pressure-sensitive adhesive sheet (A) after the step (3).
  • Step (4A-1) covering the plurality of semiconductor chips and the peripheral portion of the plurality of semiconductor chips on the adhesive surface of the adhesive layer (X1) with a sealing material, and curing the sealing material And a step of obtaining a cured sealing body in which the plurality of semiconductor chips are sealed in a curing sealing material.
  • Step (4A-2) a step of expanding the expandable particles to separate the pressure-sensitive adhesive sheet (A) and the cured sealing body.
  • Step (4B-1) a step of expanding the expandable particles to separate the pressure-sensitive adhesive sheet (A) and the plurality of semiconductor chips.
  • Step (4B-2) a step of aligning the plurality of semiconductor chips separated from the pressure-sensitive adhesive sheet (A).
  • a step of aligning the plurality of semiconductor chips separated from the adhesive sheet (A) in the step (4B-2) using an alignment jig including a plurality of accommodating portions capable of accommodating the plurality of semiconductor chips The manufacturing method of the semiconductor device as described in said [7] which is it.
  • a method of manufacturing a semiconductor device can be provided.
  • the "active ingredient” refers to the ingredient contained in the composition of interest excluding the diluent solvent.
  • mass mean molecular weight (Mw) is a value of standard polystyrene conversion measured by gel permeation chromatography (GPC) method, and is specifically a value measured based on the method as described in an Example.
  • (meth) acrylic acid indicates both “acrylic acid” and “methacrylic acid”, and the other similar terms are also the same.
  • the lower limit and upper limit which were described in steps can be combined independently, respectively about a preferable numerical range (for example, ranges, such as content etc.). For example, from the description “preferably 10 to 90, more preferably 30 to 60”, “preferred lower limit (10)” and “more preferred upper limit (60)” are combined to obtain “10 to 60”. It can also be done.
  • transfer of chip means that the exposed side of the chip attached on one adhesive sheet is attached to the other adhesive sheet, and then the one adhesive sheet is separated from the chip. And the operation of moving the chip from one adhesive sheet to the other adhesive sheet.
  • the method of manufacturing a semiconductor device is a method of manufacturing a semiconductor device using an expandable pressure-sensitive adhesive sheet (A) having a substrate (Y1) containing expandable particles and an adhesive layer (X1), A semiconductor device comprising the following steps (1) to (3) in this order, and expanding the expandable particles of the pressure-sensitive adhesive sheet (A) after the step (3) to separate the pressure-sensitive adhesive sheet (A) from the adherend Manufacturing method.
  • Process (2) The process of sticking the adhesive layer (X1) of an adhesive sheet (A) on the surface on the opposite side to the surface which contact
  • the "chip” used in the present embodiment means one obtained by dividing the workpiece into pieces, and the workpiece in the present embodiment is, for example, a semiconductor wafer, a light emitting diode (LED), a MEMS (MEMS) (Micro Electro Mechanical Systems), ceramic devices, semiconductor packages, wafers having a plurality of devices, etc. mean those which are subjected to dicing processing in the manufacturing process of semiconductor devices.
  • the pressure-sensitive adhesive sheet (A) used in the manufacturing method of the present embodiment will be described first, and then each manufacturing process including the steps (1) to (3) will be described.
  • the pressure-sensitive adhesive sheet (A) is an expandable pressure-sensitive adhesive sheet having a substrate (Y1) containing expandable particles and a pressure-sensitive adhesive layer (X1).
  • the pressure-sensitive adhesive sheet (A) can keep the adhesiveness of the pressure-sensitive adhesive layer (X1) high before expanding the expandable particles. Therefore, the plurality of chips are firmly held on the pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet (A) by attaching the pressure-sensitive adhesive layer (X1) to the exposed surface of the plurality of chips on the expand tape.
  • the expanded tape can be easily separated at once from the chip firmly held on the pressure-sensitive adhesive layer (X1) without causing the chip to come off or the like.
  • the expandable particles are expanded to form asperities on the pressure-sensitive adhesive surface of the pressure-sensitive adhesive layer (X1), whereby the pressure-sensitive adhesive surface of the pressure-sensitive adhesive layer (X1)
  • the contact area between the chip and the chip can be reduced, and the adhesion can be significantly reduced.
  • no adhesive residue or the like on the chip can be separated at once while maintaining the cleanliness.
  • Fig.1 (a) and (b) are the cross-sectional schematic diagrams of the adhesive sheet 1a which is one aspect
  • the adhesive sheet 1a shown to Fig.1 (a) has an adhesive layer (X1) in one side of a base material (Y1).
  • the adhesive sheet 1a makes separation of an expanded tape and a chip
  • the expandable particles in the base material (Y1) are expanded to generate unevenness on the surface of the pressure-sensitive adhesive layer (X1) in contact with the chip. Separation at the interface between X1) and the tip can be facilitated.
  • the adhesive sheet 1b shown in FIG. 1 (b) has a pressure-sensitive adhesive layer (X1) on one side of a substrate (Y1) and a non-intumescent base (Y1 ') on the other side.
  • the pressure-sensitive adhesive sheet 1b is used in the same manner as the pressure-sensitive adhesive sheet 1a, but when the expandable particles in the substrate (Y1) are expanded, the non-expandable substrate (Y1 ') is present.
  • the generation of irregularities on the surface of the non-expandable substrate (Y1 ') of the substrate (Y1) can be suppressed, whereby the irregularities on the surface of the pressure-sensitive adhesive layer (X1) can be made more efficient It can be formed.
  • the configuration of the pressure-sensitive adhesive sheet (A) is not limited to the configuration shown in FIGS. 1 (a) and 1 (b).
  • another configuration may be used between the substrate (Y1) and the pressure-sensitive adhesive layer (X1). It may be a configuration having a layer.
  • the structure which has another adhesive layer in the surface on the opposite side to the adhesive layer (X1) of a base material (Y1) may be sufficient.
  • the pressure-sensitive adhesive sheet (A) may have a release material on the pressure-sensitive adhesive layer (X1).
  • the peeling material is appropriately peeled and removed when the pressure-sensitive adhesive sheet (A) is used in the manufacturing method according to the present embodiment.
  • the shape of the pressure-sensitive adhesive sheet (A) can be any shape such as a sheet, a tape, and a label.
  • the substrate (Y1) of the pressure-sensitive adhesive sheet (A) is a non-adhesive substrate containing expandable particles.
  • the judgment as to whether or not the substrate is a non-adhesive substrate is made as long as the probe tack value measured in accordance with JIS Z 0237: 1991 is less than 50 mN / 5 mm ⁇ with respect to the surface of the target substrate.
  • the substrate is considered as a "non-tacky substrate".
  • the probe tack value on the surface of the substrate (Y1) used in this embodiment is usually less than 50 mN / 5 mm ⁇ , preferably less than 30 mN / 5 mm ⁇ , more preferably less than 10 mN / 5 mm ⁇ , still more preferably 5 mN It is less than 5 mm ⁇ .
  • the specific measuring method of the probe tack value in the surface of a base material (Y1) is based on the method as described in an Example.
  • the pressure-sensitive adhesive sheet (A) since the expandable particles are not contained in the pressure-sensitive adhesive layer but contained in the non-adhesive resin having a high elastic modulus, the thickness adjustment of the pressure-sensitive adhesive layer (X1) on which the chip is placed, the adhesive strength The degree of freedom in design, such as control of the viscoelastic coefficient etc., is improved. This can suppress the occurrence of positional deviation of the chip. Furthermore, when the pressure-sensitive adhesive sheet (A) is used, the chip is placed on the pressure-sensitive adhesive surface of the pressure-sensitive adhesive layer (X1), so that the base (Y1) containing the expandable particles does not come in direct contact with the chip. .
  • the residue derived from the expandable particles and a part of the greatly deformed adhesive layer adhere to the chip, and the uneven shape formed on the expandable adhesive layer is suppressed from being transferred to the chip, and the cleanliness is improved. While being kept, the chip can be subjected to the next step.
  • the thickness of the substrate (Y1) is preferably 10 to 1000 ⁇ m, more preferably 20 to 500 ⁇ m, still more preferably 25 to 400 ⁇ m, and still more preferably 30 to 300 ⁇ m.
  • the thickness of a base material (Y1) means the value measured by the method as described in an Example.
  • the substrate (Y1) can be formed from the resin composition (y1).
  • each component contained in the resin composition (y1) which is a forming material of a base material (Y1) is demonstrated.
  • the pressure-sensitive adhesive sheet (A) contains expandable particles in the base material (Y1).
  • Expandable particles are not particularly limited as long as they can form asperities on the adhesive surface of the pressure-sensitive adhesive layer (X1) by expansion by themselves due to an external stimulus and reduce the adhesive force to the adherend I will not.
  • Examples of expandable particles include, for example, thermally expandable particles expanded by heating, energy ray expandable particles expanded by irradiation of energy rays, etc., but from the viewpoint of versatility and handleability, thermally expandable particles. Is preferred.
  • the expansion start temperature (t) of the thermally expandable particles is preferably 60 to 270 ° C., more preferably 70 to 260 ° C., and still more preferably 80 to 250 ° C.
  • the expansion start temperature (t) of the thermally expandable particles means a value measured based on the following method. [Method of measuring expansion start temperature (t) of thermally expandable particles] 0.5 mg of thermally expandable particles to be measured is added to an aluminum cup having a diameter of 6.0 mm (inner diameter 5.65 mm) and a depth of 4.8 mm, and an aluminum lid (diameter 5.6 mm, thickness 0. Prepare a sample with 1 mm).
  • a dynamic viscoelasticity measuring apparatus measure the height of the sample while applying a force of 0.01 N to the sample from the top of the aluminum lid with a press. And. Heating is performed from 20 ° C to 300 ° C at a temperature increase rate of 10 ° C / min while a force of 0.01 N is applied by a pressure element, and the amount of displacement of the pressure element in the vertical direction is measured. Let the temperature be the expansion start temperature (t).
  • the thermally expandable particle is a microencapsulated foaming agent composed of an outer shell made of a thermoplastic resin and an inclusion component which is contained in the outer shell and is vaporized when heated to a predetermined temperature.
  • a thermoplastic resin constituting the outer shell of the microencapsulated foaming agent include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone and the like.
  • Examples of the encapsulated components contained in the outer shell include propane, butane, pentane, hexane, heptane, octane, nonane, decane, isobutane, isopentane, isohexane, isoheptane, isooctane, isononane, isodecane, cyclopropane, cyclobutane, cyclopentane , Cyclohexane, cycloheptane, cyclooctane, neopentane, dodecane, isododecane, cyclotridecane, hexylcyclohexane, tridecane, tetradecane, tetradecane, pentadecane, hexadecane, heptadecane, octadecane, nanodecane, isotridecane, 4-methyldodecan
  • the maximum volumetric expansion coefficient of the thermally expandable particles when heated to a temperature above the thermal expansion start temperature (t) is preferably 1.5 to 100 times, more preferably 2 to 80 times, still more preferably 2.5 to It is 60 times, more preferably 3 to 40 times.
  • the average particle size of the expandable particles at 23 ° C. before expansion is preferably 3 to 100 ⁇ m, more preferably 4 to 70 ⁇ m, still more preferably 6 to 60 ⁇ m, still more preferably 10 to 50 ⁇ m.
  • the average particle size of the expandable particles before expansion is the volume median particle size (D 50 ), and a laser diffraction type particle size distribution measuring apparatus (for example, product name “Mastersizer 3000” manufactured by Malvern, Inc.)
  • D 50 volume median particle size
  • a laser diffraction type particle size distribution measuring apparatus for example, product name “Mastersizer 3000” manufactured by Malvern, Inc.
  • the particle distribution of the expandable particles before expansion which is measured using, it means the particle diameter corresponding to 50% of the cumulative volume frequency calculated from the smaller particle diameter of the expandable particles before expansion.
  • the 90% particle size (D 90 ) of the expandable particles at 23 ° C. before expansion is preferably 10 to 150 ⁇ m, more preferably 20 to 100 ⁇ m, still more preferably 25 to 90 ⁇ m, still more preferably 30 to 80 ⁇ m. .
  • the 90% particle size (D 90 ) of the expandable particles before expansion was measured using a laser diffraction type particle size distribution measuring apparatus (for example, product name “Mastersizer 3000” manufactured by Malvern, Inc.) before expansion.
  • the cumulative volume frequency calculated from the smaller particle diameter of the expandable particles before expansion means a particle diameter corresponding to 90%.
  • the content of the expandable particles is preferably 1 to 40% by mass, more preferably 5 to 35% by mass, still more preferably 10 to 30% with respect to the total amount (100% by mass) of the active ingredient of the substrate (Y1). % By weight, even more preferably 15 to 25% by weight.
  • the resin contained in the resin composition (y1) is not particularly limited as long as the substrate (Y1) is a non-tacky resin, and it may be a non-tacky resin or even a tacky resin. Good. That is, even if the resin contained in the resin composition (y1) is a tacky resin, in the process of forming the substrate (Y1) from the resin composition (y1), the tacky resin is polymerized with the polymerizable compound The resin obtained may be a non-adhesive resin, and the substrate (Y1) containing the resin may be non-adhesive.
  • the mass average molecular weight (Mw) of the resin contained in the resin composition (y1) is preferably 1,000 to 1,000,000, more preferably 1,000 to 700,000, and still more preferably 1,000 to 500,000.
  • the form of the copolymer is not particularly limited, and it may be any of a block copolymer, a random copolymer, and a graft copolymer. It is also good.
  • the content of the resin is preferably 50 to 99% by mass, more preferably 60 to 95% by mass, still more preferably 65 to 90% with respect to the total amount (100% by mass) of the active ingredient of the resin composition (y1). % By mass, still more preferably 70 to 85% by mass.
  • the said resin contained in a resin composition (y1) contains 1 or more types chosen from acrylic urethane type resin and an olefin resin.
  • acrylic urethane resin an acrylic urethane resin (U1) formed by polymerizing a urethane prepolymer (UP) and a vinyl compound containing (meth) acrylic acid ester is preferable.
  • urethane prepolymer (UP) used as the principal chain of acrylic urethane type resin (U1), the reaction product of a polyol and polyhydric isocyanate is mentioned.
  • urethane prepolymer (UP) is further what was obtained by giving chain extension reaction using a chain extender.
  • an alkylene type polyol As a polyol used as a raw material of urethane prepolymer (UP), an alkylene type polyol, an ether type polyol, an ester type polyol, an ester amide type polyol, an ester ether type polyol, a carbonate type polyol etc. are mentioned, for example. These polyols may be used alone or in combination of two or more.
  • the polyol used in the present embodiment is preferably a diol, more preferably an ester type diol, an alkylene type diol and a carbonate type diol, and still more preferably an ester type diol and a carbonate type diol.
  • ester type diols include alkane diols such as 1,3-propanediol, 1,4-butanediol, 1,5-pentanediol, neopentyl glycol, 1,6-hexanediol, etc .; ethylene glycol, propylene glycol, Alkylene glycols such as diethylene glycol and dipropylene glycol; one or more selected from diols such as phthalic acid, isophthalic acid, terephthalic acid, naphthalenedicarboxylic acid, 4,4'-diphenyldicarboxylic acid, diphenylmethane- 4,4'-dicarboxylic acid, succinic acid, adipic acid, azelaic acid, sebacic acid, hetaic acid, maleic acid, fumaric acid, itaconic acid, cyclohexane-1,3-dicarboxylic acid, cyclohexane-1
  • alkylene type diol for example, alkanediol such as 1,3-propanediol, 1,4-butanediol, 1,5-pentanediol, neopentyl glycol, 1,6-hexanediol, etc .; ethylene glycol, propylene glycol, And alkylene glycols such as diethylene glycol and dipropylene glycol; polyalkylene glycols such as polyethylene glycol, polypropylene glycol and polybutylene glycol; and polyoxyalkylene glycols such as polytetramethylene glycol.
  • alkanediol such as 1,3-propanediol, 1,4-butanediol, 1,5-pentanediol, neopentyl glycol, 1,6-hexanediol, etc .
  • alkylene glycol such as 1,3-propanediol, 1,4-butaned
  • carbonate type diol for example, 1,4-tetramethylene carbonate diol, 1,5-pentamethylene carbonate diol, 1,6-hexamethylene carbonate diol, 1,2-propylene carbonate diol, 1,3-propylene carbonate diol 2,2-dimethylpropylene carbonate diol, 1,7-heptamethylene carbonate diol, 1,8-octamethylene carbonate diol, 1,4-cyclohexane carbonate diol and the like.
  • 1,4-tetramethylene carbonate diol 1,5-pentamethylene carbonate diol, 1,6-hexamethylene carbonate diol, 1,2-propylene carbonate diol, 1,3-propylene carbonate diol 2,2-dimethylpropylene carbonate diol, 1,7-heptamethylene carbonate diol, 1,8-octamethylene carbonate diol, 1,4-cyclohexane carbonate diol and the like.
  • polyvalent isocyanate which is a raw material of the urethane prepolymer (UP) include aromatic polyisocyanate, aliphatic polyisocyanate, and alicyclic polyisocyanate. These polyisocyanates may be used alone or in combination of two or more. Further, these polyvalent isocyanates may be trimethylolpropane adduct type modified bodies, Burret type modified bodies reacted with water, or isocyanurate type modified bodies containing an isocyanurate ring.
  • diisocyanate is preferable, and 4,4′-diphenylmethane diisocyanate (MDI), 2,4-tolylene diisocyanate (2,4-TDI), 2,6-tridiisocyanate More preferred is one or more selected from diisocyanates (2,6-TDI), hexamethylene diisocyanate (HMDI), and alicyclic diisocyanates.
  • MDI 4,4′-diphenylmethane diisocyanate
  • 2,4-TDI 2,4-tolylene diisocyanate
  • 2,6-tridiisocyanate More preferred is one or more selected from diisocyanates (2,6-TDI), hexamethylene diisocyanate (HMDI), and alicyclic diisocyanates.
  • alicyclic diisocyanate for example, 3-isocyanatomethyl-3,5,5-trimethylcyclohexyl isocyanate (isophorone diisocyanate, IPDI), 1,3-cyclopentadiisocyanate, 1,3-cyclohexane diisocyanate, 1,4-cyclohexane Diisocyanate, methyl-2,4-cyclohexane diisocyanate, methyl-2,6-cyclohexane diisocyanate, etc. may be mentioned, and isophorone diisocyanate (IPDI) is preferred.
  • IPDI isophorone diisocyanate
  • the urethane prepolymer (UP) to be the main chain of the acrylic urethane resin (U1) is a reaction product of a diol and a diisocyanate, and is a linear urethane prepolymer having an ethylenically unsaturated group at both ends.
  • Polymers are preferred.
  • hydroxyalkyl (meth) acrylates examples include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxy Examples include butyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate and the like.
  • the vinyl compound to be the side chain of the acrylic urethane resin (U1) contains at least (meth) acrylic acid ester.
  • a (meth) acrylic acid ester 1 or more types chosen from an alkyl (meth) acrylate and a hydroxyalkyl (meth) acrylate are preferable, and it is more preferable to use together an alkyl (meth) acrylate and a hydroxyalkyl (meth) acrylate.
  • the blending ratio of hydroxyalkyl (meth) acrylate is preferably 0.1 to 100 parts by mass with respect to 100 parts by mass of alkyl (meth) acrylate.
  • the amount is preferably 0.5 to 30 parts by mass, more preferably 1.0 to 20 parts by mass, and still more preferably 1.5 to 10 parts by mass.
  • the carbon number of the alkyl group contained in the alkyl (meth) acrylate is preferably 1 to 24, more preferably 1 to 12, still more preferably 1 to 8, and still more preferably 1 to 3.
  • Examples of hydroxyalkyl (meth) acrylates include the same hydroxyalkyl (meth) acrylates used to introduce an ethylenically unsaturated group at both ends of the linear urethane prepolymer described above.
  • vinyl compounds other than (meth) acrylic acid esters for example, aromatic hydrocarbon vinyl compounds such as styrene, ⁇ -methylstyrene, vinyl toluene; vinyl ethers such as methyl vinyl ether, ethyl vinyl ether; vinyl acetate, vinyl propionate And polar group-containing monomers such as (meth) acrylonitrile, N-vinylpyrrolidone, (meth) acrylic acid, maleic acid, fumaric acid, itaconic acid and meta (acrylamide). These may be used alone or in combination of two or more.
  • aromatic hydrocarbon vinyl compounds such as styrene, ⁇ -methylstyrene, vinyl toluene
  • vinyl ethers such as methyl vinyl ether, ethyl vinyl ether
  • vinyl acetate vinyl propionate
  • polar group-containing monomers such as (meth) acrylonitrile, N-vinylpyrrolidone, (meth) acrylic acid, maleic acid,
  • the content of (meth) acrylic acid ester in the vinyl compound is preferably 40 to 100% by mass, more preferably 65 to 100% by mass, still more preferably, based on the total amount (100% by mass) of the vinyl compound. It is 80 to 100% by mass, more preferably 90 to 100% by mass.
  • the total content of alkyl (meth) acrylate and hydroxyalkyl (meth) acrylate in the vinyl compound is preferably 40 to 100% by mass, more preferably 65 to 100% by mass with respect to the total amount (100% by mass) of the vinyl compound.
  • the content is 100% by mass, more preferably 80 to 100% by mass, and still more preferably 90 to 100% by mass.
  • the acrylic urethane resin (U1) used in the present embodiment is obtained by mixing the urethane prepolymer (UP) and the vinyl compound containing (meth) acrylic acid ester, and polymerizing the both. In the said superposition
  • olefin resin As an olefin resin suitable as resin contained in a resin composition (y1), it is a polymer which has a structural unit derived from an olefin monomer at least.
  • the above-mentioned olefin monomer is preferably an ⁇ -olefin having 2 to 8 carbon atoms, and specific examples thereof include ethylene, propylene, butylene, isobutylene and 1-hexene. Among these, ethylene and propylene are preferable.
  • VLDPE ultra low density polyethylene
  • LDPE low density polyethylene
  • MDPE Medium density polyethylene
  • HDPE high density polyethylene
  • PP linear low density polyethylene
  • PB polybutene resin
  • TPO ethylene-propylene copolymer
  • TPO olefin elastomer
  • PMP poly (4-methyl-1-pentene)
  • EVA ethylene-vinyl acetate copolymer
  • EVA ethylene -Vinyl alcohol copolymer
  • EVOH ethylene-propylene And olefin-based ternary copolymers
  • the olefin-based resin may be a modified olefin-based resin further subjected to one or more kinds of modification selected from acid modification, hydroxyl group modification, and acryl modification.
  • an acid-modified olefin-based resin obtained by acid-modifying an olefin-based resin a modified polymer obtained by graft polymerizing unsaturated carboxylic acid or its anhydride with the above-mentioned non-modified olefin-based resin can be mentioned.
  • unsaturated carboxylic acids or their anhydrides examples include maleic acid, fumaric acid, itaconic acid, citraconic acid, glutaconic acid, tetrahydrophthalic acid, aconitic acid, (meth) acrylic acid, maleic anhydride, itaconic anhydride And glutaconic anhydride, citraconic anhydride, aconitic acid anhydride, norbornene dicarboxylic acid anhydride, tetrahydrophthalic acid anhydride and the like.
  • unsaturated carboxylic acid or its anhydride may be used independently and may use 2 or more types together.
  • an acrylic modified olefin resin formed by subjecting an olefin resin to acrylic modification a modified polymer obtained by graft polymerizing alkyl (meth) acrylate as a side chain to the above-mentioned unmodified olefin resin which is the main chain Polymers may be mentioned.
  • the number of carbon atoms of the alkyl group contained in the above alkyl (meth) acrylate is preferably 1 to 20, more preferably 1 to 16, and still more preferably 1 to 12.
  • alkyl (meth) acrylate the same thing as the compound which can be selected as a below-mentioned monomer (a1 ') is mentioned, for example.
  • Examples of the hydroxyl group-modified olefin resin obtained by subjecting an olefin resin to hydroxyl group modification include a modified polymer obtained by graft polymerizing a hydroxyl group-containing compound to the above-mentioned non-modified olefin resin which is the main chain.
  • hydroxyl group-containing compounds examples include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl
  • examples thereof include hydroxyalkyl (meth) acrylates such as (meth) acrylate and 4-hydroxybutyl (meth) acrylate; and unsaturated alcohols such as vinyl alcohol and allyl alcohol.
  • the resin composition (y1) may contain a resin other than the acrylic urethane resin and the olefin resin as long as the effects of the present invention are not impaired.
  • resins examples include vinyl resins such as polyvinyl chloride, polyvinylidene chloride and polyvinyl alcohol; polyester resins such as polyethylene terephthalate, polybutylene terephthalate and polyethylene naphthalate; polystyrene; acrylonitrile-butadiene-styrene copolymer Cellulose: triacetate cellulose; polycarbonate; polyurethane not corresponding to acrylic urethane resin; polysulfone; polyetheretherketone; polyethersulfone; polyphenylene sulfide; polyimide resin such as polyetherimide and polyimide; polyamide resin; acrylic resin; A fluorine resin etc. are mentioned.
  • vinyl resins such as polyvinyl chloride, polyvinylidene chloride and polyvinyl alcohol
  • polyester resins such as polyethylene terephthalate, polybutylene terephthalate and polyethylene naphthalate
  • polystyrene acrylonitrile-but
  • the content ratio of resins other than acrylic urethane resins and olefin resins is preferably less than 30 parts by mass, more preferably 20 parts by mass, with respect to 100 parts by mass of the total amount of resins contained in the resin composition (y1). It is less than 10 parts by weight, more preferably less than 5 parts by weight, and even more preferably less than 1 part by weight.
  • the resin composition (y1) may contain a base additive contained in the base of a general pressure-sensitive adhesive sheet, as long as the effects of the present invention are not impaired.
  • a base material additive an ultraviolet absorber, a light stabilizer, an antioxidant, an antistatic agent, a slip agent, an antiblocking agent, a coloring agent etc. are mentioned, for example.
  • These base material additives may be used alone or in combination of two or more.
  • the content of each base material additive is preferably 0.0001 to 20 parts by mass with respect to 100 parts by mass of the resin in the resin composition (y1). And more preferably 0.001 to 10 parts by mass.
  • solvent-free type resin composition (y1 ') As an aspect of the resin composition (y1) used in the present embodiment, an oligomer having an ethylenically unsaturated group having a mass average molecular weight (Mw) of 50,000 or less, an energy ray polymerizable monomer, and the above-mentioned expandable particles are blended. Solvent-free resin composition (y1 ') which does not mix
  • Mw mass average molecular weight
  • the substrate (Y1) can be obtained by irradiating the coating film formed of the solventless resin composition (y1 ') with an energy ray.
  • the type, shape, and amount (content) of the expandable particles blended in the solventless resin composition (y1 ′) are as described above.
  • the mass average molecular weight (Mw) of the oligomer contained in the solvent-free resin composition (y1 ') is 50000 or less, preferably 1000 to 50000, more preferably 2000 to 40000, still more preferably 3000 to 35000, Still more preferably, it is 4000 to 30000.
  • any one having an ethylenically unsaturated group having a mass average molecular weight (Mw) of 50000 or less may be used.
  • Polymer (UP) is preferred.
  • the modified olefin resin etc. which have an ethylenically unsaturated group can also be used.
  • the total content of the oligomer and the energy beam polymerizable monomer in the solventless resin composition (y1 ') is preferably based on the total amount (100% by mass) of the solventless resin composition (y1'). Is 50 to 99% by mass, more preferably 60 to 95% by mass, still more preferably 65 to 90% by mass, still more preferably 70 to 85% by mass.
  • Examples of energy ray polymerizable monomers include isobornyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyloxy (meth) acrylate, cyclohexyl (meth) acrylate, adamantane ( Alicyclic polymerizable compounds such as meta) acrylate and tricyclodecane acrylate; aromatic polymerizable compounds such as phenyl hydroxy propyl acrylate, benzyl acrylate and phenol ethylene oxide modified acrylate; tetrahydrofurfuryl (meth) acrylate, morpholine acrylate, N- Examples thereof include heterocyclic polymerizable compounds such as vinyl pyrrolidone and N-vinyl caprolactam. These energy beam polymerizable monomers may be used alone or in combination of two or more.
  • the content ratio of the oligomer to the energy beam polymerizable monomer (the oligomer / energy beam polymerizable monomer) in the solvent-free resin composition (y1 ′) is preferably 20/80 to 90 by mass ratio. It is preferably 10/10, more preferably 30/70 to 85/15, still more preferably 35/65 to 80/20.
  • the solventless resin composition (y1 ') further contains a photopolymerization initiator.
  • a photopolymerization initiator By containing a photopolymerization initiator, the curing reaction can be sufficiently advanced even by irradiation with energy rays of relatively low energy.
  • photopolymerization initiator for example, 1-hydroxy-cyclohexyl-phenyl-ketone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzylphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyrol Nitrile, dibenzyl, diacetyl, 8-chloroanthraquinone and the like can be mentioned.
  • photopolymerization initiators may be used alone or in combination of two or more.
  • the compounding amount of the photopolymerization initiator is preferably 0.01 to 5 parts by mass, more preferably 0.01 to 4 parts by mass, further preferably 100 parts by mass with respect to the total amount (100 parts by mass) of the oligomer and the energy ray polymerizable monomer. Preferably, it is 0.02 to 3 parts by mass.
  • the surface of the base material (Y1) may be subjected to surface treatment by an oxidation method, an unevenness forming method, etc., and primer treatment Good.
  • the oxidation method include corona discharge treatment, plasma discharge treatment, chromic acid treatment (wet process), hot air treatment, ozone, ultraviolet irradiation treatment and the like
  • the surface roughening method include sand blast method, solvent treatment method, etc. Can be mentioned.
  • the storage elastic modulus E ′ (23) at 23 ° C. of the substrate (Y1) is preferably 1.0 ⁇ 10 6 Pa or more, more preferably 5.0 ⁇ 10 6 to 5.0 ⁇ 10 12 Pa, further preferably Is more preferably 1.0 ⁇ 10 7 to 1.0 ⁇ 10 12 Pa, still more preferably 5.0 ⁇ 10 7 to 1.0 ⁇ 10 11 Pa, still more preferably 1.0 ⁇ 10 8 to 1.0 ⁇ It is 10 10 Pa.
  • the storage elastic modulus fulfills the following requirements (1).
  • Requirement (1) The storage elastic modulus E ′ (100) of the substrate (Y1) at 100 ° C. is 2.0 ⁇ 10 5 Pa or more.
  • the expandable particles can be used even in the temperature environment of the sealing step in the manufacturing process of FOWLP and FOPLP. Since the flow can be moderately suppressed, the pressure-sensitive adhesive surface of the pressure-sensitive adhesive layer (X1) provided on the substrate (Y1) becomes difficult to deform. As a result, it is possible to prevent positional deviation of the chip and to prevent sinking of the chip into the pressure-sensitive adhesive layer (X1).
  • the storage elastic modulus E ′ (100) of the base material (Y1) is more preferably 4.0 ⁇ 10 5 Pa or more, still more preferably 6.0 ⁇ 10 5 Pa or more, still more preferably 8. It is 0 ⁇ 10 5 Pa or more, more preferably 1.0 ⁇ 10 6 Pa or more.
  • the storage elastic modulus E ′ (100) of the base material (Y1) is preferably 1.0 ⁇ 10 12 Pa or less, more preferably It is 1.0 ⁇ 10 11 Pa or less, more preferably 1.0 ⁇ 10 10 Pa or less, still more preferably 1.0 ⁇ 10 9 Pa or less.
  • the base material (Y1) which the adhesive sheet of this embodiment has thermally expansible particle as an expansible particle
  • the storage elastic modulus satisfy
  • the storage elastic modulus E ′ (t) of the base material (Y1) at the expansion start temperature (t) of the thermally expandable particles is 1.0 ⁇ 10 7 Pa or less.
  • the storage elastic modulus E ′ (t) of the base material (Y1) is more preferably 9.0 ⁇ 10 6 Pa or less, still more preferably 8.0 ⁇ 10 6 Pa or less, and still more preferably 6. It is 0 ⁇ 10 6 Pa or less, more preferably 4.0 ⁇ 10 6 Pa or less.
  • the storage elastic modulus E ′ (t) of is preferably 1.0 ⁇ 10 3 Pa or more, more preferably 1.0 ⁇ 10 4 Pa or more, and still more preferably 1.0 ⁇ 10 5 Pa or more.
  • the pressure-sensitive adhesive sheet (A) may have a pressure-sensitive adhesive layer (X1) on one side of a substrate (Y1) and a non-intumescent base (Y1 ′) on the other side.
  • X1 pressure-sensitive adhesive layer
  • Y1 ′ non-intumescent base
  • non-intumescent base material in the present specification means that the volume change rate calculated from the following formula is less than 5% by volume when treated under conditions where the expandable particles contained in the pressure-sensitive adhesive sheet (A) expand. It defines as a thing.
  • volume change rate (%) (volume of the layer after treatment ⁇ volume of the layer before treatment) / volume of the layer before treatment ⁇ 100
  • the volume change rate (%) of the non-intumescent substrate (Y1 ') calculated from the above equation is preferably less than 2% by volume, more preferably less than 1% by volume, still more preferably less than 0.1% by volume More preferably, it is less than 0.01% by volume.
  • the conditions under which the expandable particles expand are the conditions under which the heat treatment for 3 minutes is performed at the expansion start temperature (t) when the expandable particles are thermally expandable particles.
  • the non-intumescent substrate (Y1 ') may contain intumescent particles, but its content is preferably as low as possible, relative to the total mass (100% by mass) of the non-thermally-expandable substrate (Y1') Generally less than 3% by weight, preferably less than 1% by weight, more preferably less than 0.1% by weight, still more preferably less than 0.01% by weight, still more preferably less than 0.001% by weight, Most preferably, they do not contain sexual particles.
  • non-intumescent base material a paper material, resin, a metal etc. are mentioned, for example.
  • the paper material include thin paper, medium paper, high quality paper, impregnated paper, coated paper, art paper, sulfuric acid paper, glassine paper and the like.
  • the resin examples include polyolefin resins such as polyethylene and polypropylene; vinyl resins such as polyvinyl chloride, polyvinylidene chloride, polyvinyl alcohol, ethylene-vinyl acetate copolymer, ethylene-vinyl alcohol copolymer; polyethylene terephthalate, poly Polyester resins such as butylene terephthalate and polyethylene naphthalate; polystyrene; acrylonitrile-butadiene-styrene copolymer; cellulose triacetate; polycarbonate; urethane resins such as polyurethane and acryl-modified polyurethane; polymethylpentene; polysulfone; Polyether sulfone; Polyphenylene sulfide; Polyimide resin such as polyether imide and polyimide; Polyamide resin; Acrylic resin; Tsu Motokei resin, and the like.
  • polyolefin resins such as polyethylene and polypropylene
  • vinyl resins such
  • the metal examples include aluminum, tin, chromium, titanium and the like. These forming materials may be comprised by 1 type, and may use 2 or more types together.
  • a non-intumescent base material (Y1 ') using two or more kinds of forming materials in combination a paper material was laminated with a thermoplastic resin such as polyethylene, or a metal film was formed on the surface of a resin film or sheet containing resin. And the like.
  • a formation method of a metal layer the method of vapor-depositing said metal by PVD methods, such as vacuum evaporation, sputtering, and ion plating, for example, or sticking metal foil consisting of said metal using a general adhesive And the like.
  • the thickness of the intumescent substrate (Y1) and the non-intumescent substrate (Y1') before expanding the intumescent particles is preferably 0.02 to 200, more preferably 0.03 to 150, and still more preferably 0.05 to 100.
  • the non-intumescent substrate (Y1 ') contains a resin
  • the surface treatment by the oxidation method, the surface roughening method or the like may be applied to the surface of the above, and the primer treatment.
  • the non-intumescent substrate (Y1 ') may contain the above-mentioned additive for a substrate that can be contained in the resin composition (y1) together with the resin.
  • An adhesive layer (X1) is a layer which has adhesiveness.
  • the pressure-sensitive adhesive layer (X1) contains a pressure-sensitive adhesive resin, and may optionally contain an additive for pressure-sensitive adhesive such as a crosslinking agent, a tackifier, a polymerizable compound, and a polymerization initiator.
  • the adhesive strength of the adhesive surface of the adhesive layer (X1) is preferably 0.1 to 10.0 N / 25 mm, more preferably 0.2 to 8.0 N / 25 mm at 23 ° C. before the expandable particles expand. More preferably, it is 0.4 to 6.0 N / 25 mm, still more preferably 0.5 to 4.0 N / 25 mm. If the adhesive strength is 0.1 N / 25 mm or more, the chip can be firmly adhered to the chip on the expand tape, and the separation between the expand tape and the chip can be facilitated. On the other hand, when the adhesive strength is 10.0 N / 25 mm or less, it can be easily separated by a slight force when it is separated from the chip. In addition, said adhesive force means the value measured by the method as described in an Example.
  • the storage shear modulus G ′ (23) of the pressure-sensitive adhesive layer (X1) is preferably 1.0 ⁇ 10 4 to 1.0 ⁇ 10 8 Pa, more preferably 5.0 ⁇ 10 4 to 5 at 23 ° C. .0 ⁇ 10 7 Pa, more preferably 1.0 ⁇ 10 5 ⁇ 1.0 ⁇ 10 7 Pa. If the storage shear elastic modulus G ′ (23) of the pressure-sensitive adhesive layer (X1) is 1.0 ⁇ 10 4 Pa or more, positional displacement of the chip can be prevented.
  • the storage shear modulus G ′ (23) of the pressure-sensitive adhesive layer (X1) is 1.0 ⁇ 10 8 Pa or less, unevenness due to the expanded expandable particles is easily formed on the pressure-sensitive adhesive surface, with a slight force. It can be easily separated.
  • the pressure-sensitive adhesive sheet (A) is a pressure-sensitive adhesive sheet having a plurality of pressure-sensitive adhesive layers
  • the storage shear elastic modulus G ′ (23) of the pressure-sensitive adhesive layer to which the chip is attached be within the above range.
  • the storage shear elastic modulus G '(23) of all the pressure-sensitive adhesive layers on the side to which the chip is attached is more than the above-mentioned range than Y1).
  • storage shear elastic modulus G '(23) of an adhesive layer (X1) means the value measured by the method as described in an Example.
  • the thickness of the pressure-sensitive adhesive layer (X1) forms asperities on the surface of the pressure-sensitive adhesive layer to be formed by expansion of the expandable particles in the expandable base material by heat treatment, from the viewpoint of expressing excellent adhesion. From the viewpoint of facilitating operation, it is preferably 1 to 60 ⁇ m, more preferably 2 to 50 ⁇ m, still more preferably 3 to 40 ⁇ m, and still more preferably 5 to 30 ⁇ m.
  • the ratio of the thickness of the substrate (Y1) to the thickness of the pressure-sensitive adhesive layer (X1) (substrate (Y1) / pressure-sensitive adhesive layer (X1)) is 23 ° C. from the viewpoint of preventing positional deviation of the chip It is preferably 0.2 or more, more preferably 0.5 or more, more preferably 1.0 or more, still more preferably 5.0 or more, and can be easily separated by a slight force when it is separated. From the viewpoint of forming a pressure-sensitive adhesive sheet, it is preferably 1000 or less, more preferably 200 or less, further preferably 60 or less, and still more preferably 30 or less.
  • the thickness of the pressure-sensitive adhesive layer (X1) means a value measured by the method described in the examples.
  • the pressure-sensitive adhesive layer (X1) can be formed from a pressure-sensitive adhesive composition (x1) containing a pressure-sensitive adhesive resin.
  • a pressure-sensitive adhesive composition (x1) containing a pressure-sensitive adhesive resin containing a pressure-sensitive adhesive resin.
  • the adhesive resin which is a formation material of an adhesive layer (X1) has adhesiveness by this resin alone, and is a polymer whose mass average molecular weight (Mw) is 10,000 or more.
  • the mass average molecular weight (Mw) of the adhesive resin is more preferably 10,000 to 2,000,000, further preferably 20,000 to 1,500,000 and still more preferably 30,000 to 1,000,000, from the viewpoint of improving the adhesive strength.
  • the adhesive resin examples include rubber resins such as acrylic resins, urethane resins and polyisobutylene resins, polyester resins, olefin resins, silicone resins, polyvinyl ether resins and the like. These tackifying resins may be used alone or in combination of two or more. Moreover, when these adhesive resins are copolymers which have 2 or more types of structural units, the form of this copolymer is not specifically limited, A block copolymer, a random copolymer, and a graft co It may be any of polymers.
  • the adhesive resin may be an energy ray-curable adhesive resin in which a polymerizable functional group is introduced into the side chain of the above-mentioned adhesive resin.
  • the polymerizable functional group include (meth) acryloyl group and vinyl group.
  • an ultraviolet-ray, an electron beam, etc. are mentioned as an energy ray, an ultraviolet-ray is preferable.
  • the content of the adhesive resin is preferably 30 to 99.99% by mass, more preferably 40 to 99.95% by mass, with respect to the total amount (100% by mass) of the active components of the pressure-sensitive adhesive composition (x1). More preferably, it is 50 to 99.90% by mass, still more preferably 55 to 99.80% by mass, still more preferably 60 to 99.50% by mass.
  • “content of each component relative to the total amount of the active component of the pressure-sensitive adhesive composition” is “content of each component in the pressure-sensitive adhesive layer formed from the pressure-sensitive adhesive composition Is the same as
  • An adhesive resin is an acrylic resin from the viewpoint of making it easy to form the unevenness
  • the content ratio of the acrylic resin in the adhesive resin is preferably 30 to 100% by mass, more preferably 50 based on the total amount (100% by mass) of the adhesive resin contained in the adhesive composition (x1). It is -100% by mass, more preferably 70-100% by mass, still more preferably 85-100% by mass.
  • an acrylic resin that can be used as a tacky resin for example, a polymer including a structural unit derived from an alkyl (meth) acrylate having a linear or branched alkyl group, a (meth) acrylate having a cyclic structure And polymers containing structural units derived therefrom, and structural units (a1) derived from alkyl (meth) acrylates (a1 ′) (hereinafter also referred to as “monomers (a1 ′)”) and functional group-containing monomers (a2)
  • the acrylic copolymer (A1) having a structural unit (a2) derived from ') hereinafter also referred to as "monomer (a2')
  • the number of carbon atoms of the alkyl group of the monomer (a1 ′) is preferably 1 to 24, more preferably 1 to 12, still more preferably 2 to 10, and still more preferably 4 to 8 from the viewpoint of improving adhesion properties. It is.
  • the alkyl group which a monomer (a1 ') has may be a linear alkyl group, and a branched alkyl group may be sufficient.
  • the monomer (a1 ′) for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauryl (meth) acrylate, tridecyl ( Meta) acrylate, stearyl (meth) acrylate, etc. are mentioned.
  • These monomers (a1 ′) may be used alone or in combination of two or more.
  • butyl (meth) acrylate and 2-ethylhexyl (meth) acrylate are preferable.
  • the content of the structural unit (a1) is preferably 50 to 99.9 mass%, more preferably 60 to 99.0 mass based on the total structural units (100 mass%) of the acrylic copolymer (A1). %, More preferably 70 to 97.0% by mass, still more preferably 80 to 95.0% by mass.
  • a hydroxyl group, a carboxy group, an amino group, an epoxy group etc. are mentioned, for example. That is, as a monomer (a2 '), a hydroxyl-containing monomer, a carboxy-group containing monomer, an amino-group containing monomer, an epoxy-group containing monomer etc. are mentioned, for example. These monomers (a2 ′) may be used alone or in combination of two or more. Among these, as the monomer (a2 ′), a hydroxyl group-containing monomer and a carboxy group-containing monomer are preferable.
  • hydroxyl-containing monomer As a hydroxyl-containing monomer, the same thing as the above-mentioned hydroxyl-containing compound is mentioned, for example.
  • carboxy group-containing monomers include ethylenically unsaturated monocarboxylic acids such as (meth) acrylic acid and crotonic acid; and ethylenically unsaturated dicarboxylic acids such as fumaric acid, itaconic acid, maleic acid and citraconic acid, and anhydrides thereof And 2- (acryloyloxy) ethyl succinate, 2-carboxyethyl (meth) acrylate and the like.
  • the content of the structural unit (a2) is preferably 0.1 to 40% by mass, more preferably 0.5 to 35% by mass, relative to the total constituent units (100% by mass) of the acrylic copolymer (A1). %, More preferably 1.0 to 30% by mass, and still more preferably 3.0 to 25% by mass.
  • the acrylic copolymer (A1) may further have a structural unit (a3) derived from another monomer (a3 ′) other than the monomers (a1 ′) and (a2 ′).
  • the content of the structural units (a1) and (a2) is preferably 70% of the total structural units (100% by mass) of the acrylic copolymer (A1). It is about -100% by mass, more preferably 80-100% by mass, still more preferably 90-100% by mass, still more preferably 95-100% by mass.
  • Examples of the monomer (a3 ′) include olefins such as ethylene, propylene and isobutylene; halogenated olefins such as vinyl chloride and vinylidene chloride; diene-based monomers such as butadiene, isoprene and chloroprene; cyclohexyl (meth) acrylate, Has a cyclic structure such as benzyl (meth) acrylate, isobornyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyl oxyethyl (meth) acrylate, imide (meth) acrylate (Meth) acrylate; styrene, ⁇ -methylstyrene, vinyl toluene, vinyl formate, vinyl acetate, acrylonitrile, (meth) acrylamide, (meth) acrylonitrile, (
  • the acrylic copolymer (A1) may be an energy ray-curable acrylic copolymer in which a polymerizable functional group is introduced into the side chain.
  • the polymerizable functional group and the energy ray are as described above.
  • the polymerizable functional group is a substituent capable of binding to the acrylic copolymer having the above-mentioned structural units (a1) and (a2) and the functional group possessed by the structural unit (a2) of the acrylic copolymer. It can introduce
  • the compound include (meth) acryloyloxyethyl isocyanate, (meth) acryloyl isocyanate, glycidyl (meth) acrylate and the like.
  • the mass average molecular weight (Mw) of the acrylic resin is preferably 100,000 to 1,500,000, more preferably 200,000 to 1,300,000, further preferably 350,000 to 1,200,000, and still more preferably 500,000 to 1,100,000.
  • the pressure-sensitive adhesive composition (x1) contains a pressure-sensitive resin containing a functional group such as the above-mentioned acrylic copolymer (A1), it is preferable to further contain a crosslinking agent.
  • the crosslinking agent reacts with the adhesive resin having a functional group to crosslink the adhesive resins with the functional group as a crosslinking origin.
  • a crosslinking agent an isocyanate type crosslinking agent, an epoxy type crosslinking agent, an aziridine type crosslinking agent, a metal chelate type crosslinking agent etc. are mentioned, for example. These crosslinking agents may be used alone or in combination of two or more.
  • isocyanate-based crosslinking agents are preferable from the viewpoint of enhancing the cohesion and improving the adhesiveness, and from the viewpoint of availability and the like.
  • the content of the crosslinking agent is appropriately adjusted according to the number of functional groups possessed by the adhesive resin, but is preferably 0.01 to 10 parts by mass with respect to 100 parts by mass of the adhesive resin having a functional group.
  • the amount is more preferably 0.03 to 7 parts by mass, still more preferably 0.05 to 5 parts by mass.
  • the pressure-sensitive adhesive composition (x1) may further contain a tackifier from the viewpoint of further improving the adhesion.
  • tackifier refers to a component that aids in improving the adhesive strength of the above-mentioned tacky resin, and refers to an oligomer having a mass average molecular weight (Mw) of less than 10,000, It is to be distinguished from the sexing resin.
  • Mw mass average molecular weight
  • the mass average molecular weight (Mw) of the tackifier is preferably 400 to 10000, more preferably 500 to 8000, and still more preferably 800 to 5000.
  • the tackifier is obtained, for example, by copolymerizing a rosin resin, a terpene resin, a styrene resin, a penten formed by thermal decomposition of petroleum naphtha, a C5 fraction such as isoprene, piperine, 1,3-pentadiene and the like.
  • the softening point of the tackifier is preferably 60 to 170 ° C., more preferably 65 to 160 ° C., still more preferably 70 to 150 ° C.
  • the "softening point" of the tackifier means a value measured in accordance with JIS K 2531.
  • the tackifier may be used alone or in combination of two or more different in softening point, structure and the like. When two or more types of tackifiers are used, it is preferable that the weighted average of the softening points of the plurality of tackifiers belongs to the above range.
  • the content of the tackifier is preferably 0.01 to 65% by mass, more preferably 0.05 to 55% by mass, based on the total amount (100% by mass) of the active ingredients of the pressure-sensitive adhesive composition (x1). More preferably, it is 0.1 to 50% by mass, still more preferably 0.5 to 45% by mass, and still more preferably 1.0 to 40% by mass.
  • the pressure-sensitive adhesive composition (x1) contains an energy ray-curable adhesive resin as the adhesive resin
  • a photopolymerization initiator By forming a pressure-sensitive adhesive composition containing an energy ray-curable adhesive resin and a photopolymerization initiator, the pressure-sensitive adhesive layer formed from the pressure-sensitive adhesive composition can be subjected to relatively low energy energy irradiation as well. It is possible to sufficiently advance the curing reaction and adjust the adhesive strength to a desired range.
  • a photoinitiator the same thing as what is mix
  • the content of the photopolymerization initiator is preferably 0.01 to 10 parts by mass, more preferably 0.03 to 5 parts by mass, and still more preferably 0.1 parts by mass with respect to 100 parts by mass of the energy ray-curable adhesive resin. It is 05 to 2 parts by mass.
  • the pressure-sensitive adhesive composition (x1) which is a forming material of the pressure-sensitive adhesive layer (X1), is used in a general pressure-sensitive adhesive other than the above-mentioned additives as long as the effects of the present invention are not impaired.
  • an adhesive additive include an antioxidant, a softener (plasticizer), a rust inhibitor, a pigment, a dye, a retarder, a reaction accelerator (catalyst), an ultraviolet absorber, and the like.
  • These pressure-sensitive adhesive additives may be used alone or in combination of two or more.
  • each adhesive additive is preferably 0.0001 to 20 parts by mass, and more preferably 0.001 to 100 parts by mass of the adhesive resin. 10 parts by mass.
  • the pressure-sensitive adhesive layer (X1) may contain expandable particles. The content is preferably 5 parts by mass or less, more preferably 2 parts by mass or less, and most preferably not contained with respect to 100 parts by mass of the adhesive resin.
  • peeling material As the peeling material optionally used, a peeling sheet subjected to double-sided peeling treatment, a peeling sheet subjected to single-sided peeling treatment and the like are used, and a substrate obtained by applying a peeling agent on a substrate for a peeling material can be mentioned.
  • substrates for release materials include papers such as high-quality paper, glassine paper, kraft paper, etc .; polyester resin films such as polyethylene terephthalate resin, polybutylene terephthalate resin, polyethylene naphthalate resin, polypropylene resin, polyethylene resin, etc.
  • Plastic films, such as an olefin resin film ;; etc. are mentioned.
  • release agents include silicone resins, olefin resins, isoprene resins, rubber elastomers such as butadiene resins, long chain alkyl resins, alkyd resins, fluorine resins, and the like.
  • the thickness of the release material is not particularly limited, but is preferably 10 to 200 ⁇ m, more preferably 25 to 170 ⁇ m, and still more preferably 35 to 80 ⁇ m.
  • the resin composition (y1) and the pressure-sensitive adhesive composition (x1) may be mixed with a diluting solvent to form a solution.
  • the coating method include spin coating, spray coating, bar coating, knife coating, roll coating, blade coating, die coating, and gravure coating.
  • the drying or UV irradiation in the production method (I) and the production method (II) is preferably carried out by appropriately selecting conditions under which the expandable particles do not expand.
  • the drying temperature is preferably lower than the expansion start temperature (t) of the thermally expandable particles .
  • the resin composition (y1) is previously formed in the steps (Ia) and (IIa). It may be applied on the formed non-intumescent substrate (Y1 ').
  • the non-intumescent substrate (Y1 ') is formed, for example, using the resin composition which is a forming material of the non-intumescent substrate (Y1') by the same operation as the steps (Ia) and (IIa). be able to.
  • Process (1) The space
  • Process (2) The process of sticking the adhesive layer (X1) of an adhesive sheet (A) on the surface on the opposite side to the surface which contact
  • Step (3) a step of separating the plurality of chips attached to the pressure-sensitive adhesive sheet (A) and the pressure-sensitive adhesive sheet (B).
  • Step (1) the distance between a plurality of semiconductor chips mounted on the pressure-sensitive adhesive layer (X2) of the pressure-sensitive adhesive sheet (B) having the substrate (Y2) and the pressure-sensitive adhesive layer (X2) B) Stretching and spreading.
  • the pressure-sensitive adhesive sheet (B) is used as an expand tape which widens the distance between the semiconductor chips CP.
  • the pressure-sensitive adhesive sheet (B) has a base material (Y2) and a pressure-sensitive adhesive layer (X2), and the distance between a plurality of semiconductor chips CP placed on the pressure-sensitive adhesive layer (X2) is It is used to stretch and spread the pressure-sensitive adhesive sheet (B).
  • the material of the substrate (Y2) examples include polyvinyl chloride resin, polyester resin (polyethylene terephthalate etc.), acrylic resin, polycarbonate resin, polyethylene resin, polypropylene resin, acrylonitrile butadiene styrene resin, polyimide resin, polyurethane resin, And polystyrene resins.
  • the substrate (Y2) preferably contains a thermoplastic elastomer, a rubber-based material, and the like, and more preferably contains a thermoplastic elastomer.
  • thermoplastic elastomer examples include urethane elastomers, olefin elastomers, vinyl chloride elastomers, polyester elastomers, styrene elastomers, acrylic elastomers, and amide elastomers.
  • the base material (Y2) may be obtained by laminating a plurality of films made of the above-mentioned material, or may be obtained by laminating a film made of the above-mentioned material and another film.
  • the base material (Y2) may contain various additives such as pigments, dyes, flame retardants, plasticizers, antistatic agents, lubricants, fillers and the like in the film containing the above-mentioned resin material as a main material. .
  • the pressure-sensitive adhesive layer (X2) may be composed of a non-energy ray curable pressure sensitive adhesive, or may be composed of an energy ray curable pressure sensitive adhesive.
  • the non-energy ray curable adhesive those having desired adhesive strength and removability are preferable.
  • an acrylic pressure-sensitive adhesive is preferable from the viewpoint of effectively suppressing the detachment of the semiconductor chip or the like when the pressure-sensitive adhesive sheet (B) is stretched.
  • the energy ray-curable pressure-sensitive adhesive is cured by energy ray irradiation and the adhesive force is reduced. Therefore, when the semiconductor chip and the pressure-sensitive adhesive sheet (B) are separated, they can be easily separated by energy ray irradiation. .
  • the energy ray-curable pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer (X2) includes, for example, (a) a polymer having energy ray curability, and (b) a monomer having at least one or more energy ray curable groups and / or Or what contains 1 or more types selected from an oligomer is mentioned.
  • acrylic ester (co) polymer for example, alkyl (meth) acrylate having 1 to 18 carbon atoms in the alkyl group, a polymerizable double bond, a hydroxy group, a carboxy group, an amino group, a substituted one Those obtained by copolymerizing a monomer having a functional group such as an amino group and an epoxy group in the molecule with another and then reacting an unsaturated group-containing compound having a functional group to be bonded to the functional group Be (B)
  • the monomer and / or oligomer having at least one energy ray-curable group include esters of polyhydric alcohol and (meth) acrylic acid, and specifically, cyclohexyl (meth) acrylate, Monofunctional acrylic acid esters such as isobornyl (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol t
  • the thickness of the substrate (Y2) is not particularly limited, but is preferably 20 to 250 ⁇ m, more preferably 40 to 200 ⁇ m.
  • the thickness of the pressure-sensitive adhesive layer (X2) is not particularly limited, but preferably 3 to 50 ⁇ m, more preferably 5 to 40 ⁇ m.
  • the breaking elongation of the pressure-sensitive adhesive sheet (B) measured in the MD direction and the CD direction at 23 ° C. is preferably 100% or more.
  • the breaking elongation is in the above-mentioned range, it is possible to stretch greatly. Therefore, it can be used suitably for the use which needs to fully separate semiconductor chips, such as manufacture of a fan-out type package.
  • Dicing step After adhering the semiconductor wafer W to the pressure-sensitive adhesive layer (X3) of the pressure-sensitive adhesive sheet (C) comprising the substrate (Y3) and the pressure-sensitive adhesive layer (X3), the semiconductor wafer W is diced to obtain a pressure-sensitive adhesive layer Step of obtaining a plurality of semiconductor chips CP singulated on X3)
  • Reversing step of semiconductor chip A plurality of semiconductor chips using an adhesive sheet (D) having a base (Y4) and an adhesive layer (X4) The pressure-sensitive adhesive layer (X4) of the pressure-sensitive adhesive sheet (D) is attached to the surface opposite to the surface in contact with the pressure-sensitive adhesive layer (X3) of CP, and the plurality of semiconductor chips CP and the pressure-sensitive adhesive sheet (C) are separated Process.
  • Transfer step using a pressure-sensitive adhesive sheet (B) having a substrate (Y2) and a pressure-sensitive adhesive layer (X2), on the surface of the plurality of semiconductor chips CP opposite to the surface in contact with the pressure-sensitive adhesive layer (X4) The process of sticking the adhesive layer (X2) of a sheet
  • the pressure-sensitive adhesive sheet (C) is not particularly limited as long as the above object can be achieved, but it is necessary that the pressure-sensitive adhesive sheet (C) can be attached to and separated from a semiconductor chip.
  • a pressure-sensitive adhesive sheet having a pressure-sensitive adhesive layer comprising a non-energy ray-curable pressure-sensitive adhesive having removability such as a pressure-sensitive adhesive sheet comprising an expandable tape described later, a pressure-sensitive adhesive layer comprising an energy ray-curable pressure-sensitive adhesive
  • the adhesive sheet etc. which it has are suitable.
  • an adhesive sheet (A) as an adhesive sheet (C) the aspect of the adhesive sheet (A) used at a process (3) and the aspect of the adhesive sheet (A) used at this process are the same. Or they may be different.
  • the semiconductor wafer W may be, for example, a silicon wafer, or a compound semiconductor wafer such as gallium or arsenic.
  • the semiconductor wafer W has a circuit W2 on its circuit surface W1. Examples of a method of forming the circuit W2 include an etching method, a lift-off method, and the like. In the present specification, the surface opposite to the circuit surface W1 may be referred to as "chip back surface".
  • the semiconductor wafer W is ground to a predetermined thickness in advance to expose the chip back surface and is attached to the adhesive sheet (A). Examples of the method for grinding the semiconductor wafer W include known methods using a grinder or the like.
  • a ring frame may be attached to the adhesive sheet (C) for the purpose of holding the semiconductor wafer W.
  • the ring frame and the semiconductor wafer W are placed on the pressure-sensitive adhesive layer (X3) of the pressure-sensitive adhesive sheet (C), and these are lightly pressed and fixed.
  • the semiconductor wafer W held by the adhesive sheet (C) is singulated by dicing to form a plurality of semiconductor chips CP.
  • cutting means such as dicing saw, laser, plasma dicing, stealth dicing and the like are used, for example.
  • the cutting depth in dicing may be set appropriately in consideration of the thickness of the semiconductor wafer, but can be, for example, within 2 ⁇ m from the top surface of the pressure-sensitive adhesive layer (X3).
  • the step (1) may include a process of stretching the pressure-sensitive adhesive sheet (C) in order to widen the distance between the plurality of obtained semiconductor chips CP after dicing the semiconductor wafer W.
  • FIGS. 3A and 3B using the pressure-sensitive adhesive sheet (D) having the base material (Y4) and the pressure-sensitive adhesive layer (X4), the surface in contact with the pressure-sensitive adhesive layer (X3) of a plurality of semiconductor chips CP.
  • a cross-sectional view for explaining a step of attaching the pressure-sensitive adhesive layer (X4) of the pressure-sensitive adhesive sheet (D) to the surface on the opposite side to separate the plurality of semiconductor chips CP and the pressure-sensitive adhesive sheet (C) is shown. .
  • This step is an optional step performed according to the subsequent steps, and is performed for the purpose of reversing the front and back of the plurality of semiconductor chips CP (that is, the circuit surface W1 and the chip rear surface).
  • the pressure-sensitive adhesive sheet (D) is not particularly limited as long as the above object can be achieved, but it is necessary that the pressure-sensitive adhesive sheet (D) can be attached to and separated from the semiconductor chip.
  • a pressure-sensitive adhesive sheet having a pressure-sensitive adhesive layer comprising a non-energy ray-curable pressure-sensitive adhesive having removability such as a pressure-sensitive adhesive sheet comprising an expandable tape described later, a pressure-sensitive adhesive layer comprising an energy ray-curable pressure-sensitive adhesive The adhesive sheet etc. which it has are suitable.
  • the method of separating the plurality of semiconductor chips CP and the adhesive sheet (C) may be determined according to the mode of the adhesive sheet (C), and the adhesive layer (X3) is composed of a non-energy ray curable adhesive If the adhesive layer (X3) is composed of an energy ray-curable adhesive, it may be cured by energy ray irradiation to reduce the adhesive force. If the pressure-sensitive adhesive sheet (C) contains expandable particles such as the pressure-sensitive adhesive sheet (A), it may be separated after expanding the expandable particles to reduce the adhesive strength. When separating, at least the pressure-sensitive adhesive layer (X4) of the pressure-sensitive adhesive sheet (D) maintains a higher adhesiveness than the pressure-sensitive adhesive layer (X3) of the pressure-sensitive adhesive sheet (C). And the kind and peeling method of an adhesive sheet (D) are selected.
  • FIGS. 4 (a) and 4 (b) using the pressure-sensitive adhesive sheet (B) having the substrate (Y2) and the pressure-sensitive adhesive layer (X2), the surface in contact with the pressure-sensitive adhesive layer (X4) of a plurality of semiconductor chips CP.
  • a cross-sectional view for explaining a transfer step of sticking the pressure-sensitive adhesive layer (X2) of the pressure-sensitive adhesive sheet (B) onto the surface on the opposite side to separate the plurality of semiconductor chips CP and the pressure-sensitive adhesive sheet (D) is shown There is.
  • This step is a step of transferring the plurality of semiconductor chips CP transferred onto the pressure-sensitive adhesive sheet (D) by the reversing step to a pressure-sensitive adhesive sheet (B) which is an expanded tape.
  • the method of separating the plurality of semiconductor chips CP and the pressure-sensitive adhesive sheet (D) may be determined according to the aspect of the pressure-sensitive adhesive sheet (D) as in the case of the pressure-sensitive adhesive sheet (C).
  • FIGS. 5A and 5B a plurality of semiconductor chips CP mounted on the pressure-sensitive adhesive layer (X2) of the pressure-sensitive adhesive sheet (B) having the base (Y2) and the pressure-sensitive adhesive layer (X2)
  • a cross-sectional view for explaining the step (1) (expanding step) of stretching and expanding the pressure-sensitive adhesive sheet (B) is shown.
  • the plurality of semiconductor chips CP are placed on the pressure-sensitive adhesive layer (X2) of the pressure-sensitive adhesive sheet (B).
  • the adhesive sheet (B) is stretched to increase the distance between the plurality of semiconductor chips CP to the distance D.
  • the distance D between the plurality of expanded semiconductor chips CP may be appropriately determined according to the form of the desired semiconductor device, but is preferably 50 to 6000 ⁇ m.
  • Step (2) of sticking the pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet (A) to the surface opposite to the surface in contact with the pressure-sensitive adhesive layer (X2) of CP;
  • a cross-sectional view illustrating the step (3) of separating B) is shown.
  • the method of separating the pressure-sensitive adhesive sheet (B) and the plurality of semiconductor chips CP may be determined according to the mode of the pressure-sensitive adhesive sheet (B) as in the case of the pressure-sensitive adhesive sheet (C).
  • a plurality of semiconductor chips CP whose spacing is expanded from one another can be obtained on the adhesive layer (X1) of the adhesive sheet (A).
  • the plurality of semiconductor chips CP on the pressure-sensitive adhesive sheet (A) may be sealed with a sealing resin on the pressure-sensitive adhesive sheet (A) and then subjected to a rewiring forming step, or separated from the pressure-sensitive adhesive sheet (A)
  • the semiconductor chip may be subjected to the step of aligning and then subjected to the sealing step and the rewiring forming step.
  • the pressure-sensitive adhesive sheet (A) and the plurality of semiconductor chips CP expand the expandable particles by heat, energy rays or the like according to the type thereof, whereby the pressure-sensitive adhesive layer (X1) adheres Asperities can be formed on the surface (X1a), thereby reducing the adhesion between the adhesive surface (X1a) and the plurality of semiconductor chips CP, and separating the adhesive sheet (A) and the plurality of semiconductor chips CP .
  • the method of expanding the expandable particles may be appropriately selected according to the type of expandable particles, and when the expandable particles are thermally expandable particles, it may be heated to a temperature higher than the expansion start temperature (t) .
  • the “temperature at or above the expansion start temperature (t)” is preferably “expansion start temperature (t) + 10 ° C.” or more and “expansion start temperature (t) + 60 ° C.” or less, “expansion start temperature (t)). It is more preferable that it is t) + 15 ° C or more and "expansion start temperature (t) + 40 ° C" or less.
  • it may be expanded by heating to a range of 120 to 250 ° C.
  • the expansion of the expandable particles is preferably carried out in a state in which the surface (Y1a) opposite to the pressure-sensitive adhesive layer (X1) of the substrate (Y1) is fixed.
  • the surface (Y1a) opposite to the pressure-sensitive adhesive layer (X1) of the substrate (Y1) is fixed.
  • the fixing may be any method, for example, a method of providing the non-intumescent base material (Y1 ′) described above on the surface (Y1a) side of the base material (Y1), a plurality of suction holes as a fixing jig Method of fixing the surface (Y1a) of the substrate (Y1) by using a suction table having a hard support on the surface (Y1a) of the substrate (Y1) via an optional pressure-sensitive adhesive layer, double-sided pressure-sensitive adhesive sheet, etc. And the like.
  • the suction table has a pressure reducing mechanism such as a vacuum pump, and the target pressure is fixed to the suction surface by sucking the object from a plurality of suction holes by the pressure reducing mechanism.
  • the material of the hard support may be appropriately determined in consideration of mechanical strength, heat resistance, etc.
  • metallic materials such as SUS
  • nonmetallic inorganic materials such as glass, silicon wafer
  • Resin materials such as engineering plastics, super engineering plastics, polyimides, and polyamideimides
  • composite materials such as glass epoxy resins; and the like.
  • SUS, glass, silicon wafers and the like are preferable.
  • engineering plastics include nylon, polycarbonate (PC), and polyethylene terephthalate (PET).
  • Super engineering plastics include polyphenylene sulfide (PPS), polyether sulfone (PES), and polyether ether ketone (PEEK).
  • step (4A) a step of forming a rewiring after sealing a plurality of semiconductor chips CP on the pressure-sensitive adhesive sheet (A) with a sealing resin on the pressure-sensitive adhesive sheet (A)
  • step (4B ) sealing and rewiring
  • the step (4A) is a step of forming a rewiring after sealing the plurality of semiconductor chips CP on the pressure-sensitive adhesive sheet (A) with a sealing resin on the pressure-sensitive adhesive sheet (A). It is preferable to have 1) to (4A to 3).
  • Step (4A-1) covering the plurality of semiconductor chips CP and the peripheral portion of the plurality of semiconductor chips CP in the adhesive surface of the adhesive layer (X1) of the adhesive sheet (A) with a sealing material, A step of curing a sealing material to obtain a cured sealing body in which the plurality of semiconductor chips CP are sealed in a cured sealing material
  • Step (4A-2) expanding the expandable particles to form a pressure-sensitive adhesive sheet And (A) separating the cured sealing body.
  • Step (4A-3) Step of forming a rewiring layer on the cured sealing body from which the pressure-sensitive adhesive sheet (A) has been separated When the pressure-sensitive adhesive sheet (A) seals a semiconductor chip as in step (4A) It is also suitable as a temporary fixing sheet.
  • the expandable particles are not contained in the pressure-sensitive adhesive layer but in the non-adhesive resin having a high elastic modulus, adjustment of the thickness of the pressure-sensitive adhesive layer (X1) on which the semiconductor chip is placed, adhesion
  • the degree of freedom in design is improved. While being able to suppress generation
  • the semiconductor chip is mounted on the pressure-sensitive adhesive surface of the pressure-sensitive adhesive layer (X1), so the base (Y1) containing the expandable particles and the rewiring layer formation surface are directly connected. There is no contact with As a result, the residue derived from the expansive particles and a part of the greatly deformed adhesive layer adhere to the rewiring layer formation surface, or the concavo-convex shape formed on the thermally expandable adhesive layer is transferred to the rewiring layer formation surface As a result, the reduction in smoothness is suppressed, and a rewiring layer formation surface excellent in cleanliness and smoothness is obtained.
  • a cross-sectional view for explaining the step (4A-1) of obtaining the cured sealing body 50 sealed in the above is shown.
  • the sealing material 40 has a function of protecting the plurality of semiconductor chips CP and the components attached thereto from the external environment.
  • Arbitrary things can be suitably selected and used from what is conventionally used as a semiconductor sealing material.
  • the sealing material 40 has curability from the viewpoint of mechanical strength, heat resistance, insulation and the like, and examples thereof include a thermosetting resin composition, an energy ray curable resin composition, and the like.
  • a thermosetting resin which the thermosetting resin composition which is the sealing material 40 contains, although an epoxy resin, a phenol resin, cyanate resin etc.
  • thermosetting resin composition is, in addition to the thermosetting resin, if necessary, a curing agent such as a phenol resin-based curing agent, an amine-based curing agent, a curing accelerator, an inorganic filler such as silica, You may contain additives, such as an elastomer.
  • the sealing material 40 may be solid or liquid at room temperature.
  • the form of the sealing material 40 which is solid at room temperature is not particularly limited, and may be, for example, granular form, sheet form or the like.
  • the covering step and the curing step using a sheet-like sealing material (hereinafter, also referred to as a “sheet-like sealing material”).
  • sheet-like sealing material In the method using the sheet-like sealing material, the sheet-like sealing material is placed so as to cover the plurality of semiconductor chips CP and the peripheral portion 45 thereof, whereby the plurality of semiconductor chips CP and the peripheral portion 45 thereof are sealed. Cover by 40.
  • any method may be appropriately selected and applied from the methods conventionally applied to the semiconductor sealing step.
  • a roll laminating method, a vacuum pressing method, a vacuum laminating method, a spin coating method, a die coating method, a transfer molding method, a compression molding method, etc. can be applied.
  • the sealing material 40 is usually heated at the time of coating to impart fluidity.
  • the temperature at which the thermosetting resin composition is heated in the coating step varies depending on the type of the sealing material 40, the type of the pressure-sensitive adhesive sheet (A), etc.
  • 70 to 150 ° C. is more preferable.
  • the heating time is, for example, 5 seconds to 60 minutes, preferably 10 seconds to 45 minutes, and more preferably 15 seconds to 30 minutes.
  • the sealing material 40 is filled in the gaps between the plurality of semiconductor chips CP while covering the entire exposed surface of the plurality of semiconductor chips CP.
  • the sealing material 40 is cured to form a cured sealing body in which a plurality of semiconductor chips CP are sealed in the curing sealing material 41.
  • Get 50 The temperature for curing the sealing material 40 in the curing step varies depending on the type of the sealing material 40, the type of the adhesive sheet (A), etc., but is, for example, 80 to 240 ° C, preferably 90 to 200 ° C. And 100 to 170 ° C. are more preferable.
  • the heating time is, for example, 10 to 180 minutes, preferably 20 to 150 minutes, and more preferably 30 to 120 minutes.
  • Step (4A-2) Next, as shown in FIG. 8D, the pressure-sensitive adhesive sheet (A) is separated from the cured sealing body 50.
  • the method for separating the pressure-sensitive adhesive sheet (A) is as described above.
  • the sealing process is performed in a state where the circuit surface W1 of the plurality of semiconductor chips CP is in contact with the adhesive layer (X1) of the adhesive sheet (A).
  • the sealing step may be carried out in the exposed state (that is, the state in which the back surface of the chip is in contact with the pressure-sensitive adhesive layer (X1)).
  • the circuit surface W1 of the plurality of semiconductor chips CP is covered with the sealing resin, but after the sealing resin is cured, the curing sealing material is appropriately scraped off using a grinder or the like, and again The circuit surface W1 may be exposed.
  • Step (4A-3): Rewiring Layer Forming Step] 9 (a) to 9 (c) are cross-sectional views for explaining the step (4A-3) of forming a rewiring layer on the cured sealing body 50 from which the pressure-sensitive adhesive sheet (A) is separated.
  • FIG. 9B is a cross-sectional view for explaining a process of forming the first insulating layer 61 on the circuit surface W1 of the semiconductor chip CP and the surface 50a of the cured sealing body 50.
  • a first insulating layer 61 containing an insulating resin is formed on the circuit surface W1 and the surface 50a so as to expose the internal terminal electrode W3 of the circuit W2 of the semiconductor chip CP or the circuit W2.
  • the material of the internal terminal electrode W3 is not limited as long as it is a conductive material, and metals such as gold, silver, copper and aluminum, alloys containing these metals, and the like can be mentioned.
  • FIG. 9C is a cross-sectional view for explaining the step of forming the rewiring 70 electrically connected to the semiconductor chip CP sealed in the cured sealing body 50.
  • the rewiring 70 is formed following the formation of the first insulating layer 61.
  • the material of the rewiring 70 is not limited as long as it is a conductive material, and examples thereof include metals such as gold, silver, copper, and aluminum, and alloys containing these metals.
  • the rewiring 70 can be formed by a known method such as a subtractive method or a semi-additive method.
  • FIG. 10A is a cross-sectional view for explaining the process of forming the second insulating layer 62 covering the rewiring 70.
  • the rewiring 70 has an external electrode pad 70A for an external terminal electrode. An opening or the like is provided in the second insulating layer 62 to expose the external electrode pad 70A for the external terminal electrode.
  • the external electrode pad 70A is in and out of the area (area corresponding to the circuit surface W1) of the semiconductor chip CP of the cured sealing body 50 (area corresponding to the surface 50a on the cured sealing body 50) Exposed to Further, the rewiring 70 is formed on the surface 50 a of the cured sealing body 50 such that the external electrode pads 70 A are arranged in an array. In the present embodiment, since the external electrode pad 70A is exposed outside the region of the semiconductor chip CP of the cured sealing body 50, FOWLP or FOPLP can be obtained.
  • FIG. 10B is a cross-sectional view for explaining the step of connecting the external terminal electrode 80 to the external electrode pad 70A.
  • An external terminal electrode 80 such as a solder ball is placed on the external electrode pad 70A exposed from the second insulating layer 62, and the external terminal electrode 80 and the external electrode pad 70A are electrically connected by solder bonding or the like.
  • the material of the solder ball is not particularly limited, and examples thereof include lead-containing solder and lead-free solder.
  • FIG. 10C shows a cross-sectional view for explaining a second dicing step of singulating the cured sealing body 50 to which the external terminal electrode 80 is connected.
  • the cured sealing body 50 is singulated in units of semiconductor chips CP.
  • the method of singulating the cured sealing body 50 is not particularly limited, and can be carried out by a cutting means such as a dicing saw.
  • the semiconductor device 100 of the semiconductor chip CP unit is manufactured.
  • the semiconductor device 100 in which the external terminal electrode 80 is connected to the external electrode pad 70A fanned out of the area of the semiconductor chip CP as described above is manufactured as FOWLP, FOPLP or the like.
  • Step (4B) ⁇ Step (4B)> Next, after the step (3), the plurality of semiconductor chips CP are separated from the pressure-sensitive adhesive sheet (A), and rearrangement is performed to align the semiconductor chips, and then a step of forming sealing and rewiring (4B Will be described.
  • the step (4B) preferably includes the following steps (4B-1) and (4B-2).
  • Step (4B-1) a step of expanding the expandable particles to separate the pressure-sensitive adhesive sheet (A) and the plurality of semiconductor chips CP.
  • Step (4B-2) a step of aligning the plurality of semiconductor chips CP separated from the adhesive sheet (A).
  • the step (4B-2) is a step of aligning the plurality of semiconductor chips CP separated from the adhesive sheet (A) using an alignment jig including a plurality of accommodating portions capable of accommodating the plurality of semiconductor chips CP. Is preferred.
  • Step (4B-1) In FIGS. 11A and 11B, a plurality of semiconductors are obtained by separating the adhesive sheet (A) and the plurality of semiconductor chips CP by expanding the expandable particles in the adhesive sheet (A).
  • a cross-sectional view for explaining the step (4B-1) of moving the chip CP to the alignment jig 10 placed on the holding member 20 is shown.
  • the alignment jig 10 includes a plurality of accommodating portions 11 capable of accommodating the semiconductor chip CP.
  • the conditions for separating the pressure-sensitive adhesive sheet (A) and the plurality of semiconductor chips CP are as described above. As shown in FIG.
  • FIG. 12 shows a plan view of the alignment jig 10, and the alignment jig 10 includes a frame-shaped main body 12 and an accommodating portion 11 capable of accommodating the semiconductor chip CP.
  • accommodation portions 11 that open in a substantially square shape in plan view are arranged in a square lattice shape.
  • Step (4B-2) 13A and 13B are cross-sectional views for explaining the step (4B-2) of aligning the plurality of semiconductor chips CP separated from the pressure-sensitive adhesive sheet (A).
  • the plurality of semiconductor chips CP separated from the pressure-sensitive adhesive sheet (A) are contained in the housing portion 11 of the alignment jig 10 including the plurality of housing portions 11 capable of housing the plurality of semiconductor chips CP. It is placed.
  • the alignment jig 10 on the holding member 20 is moved in the X and Y directions, and the wall portion 11a of the alignment jig 10 and the side surface CPa of the semiconductor chip CP Abut.
  • the holding member 20 itself or both the holding member 20 and the alignment jig 10 may be moved to abut the wall portion 11a of the alignment jig 10 with the side surface CPa of the semiconductor chip CP.
  • a plurality of aligned semiconductor chips CP can be obtained.
  • the semiconductor chips CP aligned in the step (4B) are transferred to a temporary fixing sheet such as an adhesive sheet (A) again after performing the reversing step and the transferring step as necessary.
  • FOWLP and FOPLP can be manufactured through the same sealing step and rewiring formation step as the above step (4A).
  • ⁇ Measurement of thickness of each layer> The thickness was measured using a constant-pressure thickness measuring device (model number: “PG-02J”, standard: JIS K6783, Z1702, Z1709) manufactured by Teclock Co., Ltd.
  • the particle distribution of the thermally expandable particles before expansion at 23 ° C. was measured using a laser diffraction type particle size distribution measuring apparatus (for example, product name “Mastersizer 3000” manufactured by Malvern Co., Ltd.). Then, the particle diameter corresponding to 50% and 90% of the cumulative volume frequency calculated from the smaller particle diameter of the particle distribution is respectively referred to as “average particle diameter (D 50 ) of thermally expandable particles” and “thermally expandable particles 90% particle diameter (D 90 ) of
  • the expandable base material has a size of 5 mm long ⁇ 30 mm wide ⁇ 200 ⁇ m thick, and the release material removed is used as a test sample.
  • Test start temperature 0 ° C
  • test end temperature 300 ° C
  • temperature rise rate 3 ° C / min frequency 1 Hz
  • amplitude 20 ⁇ m using a dynamic viscoelasticity measurement device (manufactured by TA Instruments, product name "DMAQ800")
  • the storage elastic modulus E ′ of the test sample was measured at a predetermined temperature under the following conditions.
  • ⁇ Storage shear modulus G ′ of pressure-sensitive adhesive layer> When the object to be measured is a pressure-sensitive adhesive layer having adhesiveness, the pressure-sensitive adhesive layer has a diameter of 8 mm and a thickness of 3 mm, and the release material is removed as a test sample.
  • a visco-elasticity measuring device manufactured by Anton Paar, device name “MCR 300”
  • torsional shear method under the conditions of test start temperature 0 ° C., test end temperature 300 ° C., temperature rising rate 3 ° C./min, frequency 1 Hz.
  • ⁇ Probe Tack Value> The expansive substrate or pressure-sensitive adhesive layer to be measured is cut into a square of 10 mm on a side, and then allowed to stand for 24 hours under an environment of 23 ° C and 50% RH (relative humidity) to remove light peeling film It was a test sample. Using the tacking tester (product name "NTS-4800" manufactured by Japan Special Instruments Co., Ltd.) under the environment of 23 ° C and 50% RH (relative humidity), the above-mentioned test sample was removed the light release film. The probe tack value on the surface of the test sample, which was exposed, was measured in accordance with JIS Z0237: 1991.
  • the probe is subjected to the test sample at a speed of 10 mm / sec. The force required to move away from the surface was measured. And the measured value was made into the probe tack value of the test sample.
  • Acrylic copolymer (i): having a structural unit derived from a raw material monomer consisting of 2-ethylhexyl acrylate (2EHA) / 2-hydroxyethyl acrylate (HEA) 80.0 / 20.0 (mass ratio), A solution containing a 600,000 Mw acrylic copolymer. Dilution solvent: ethyl acetate, solid concentration: 40% by mass.
  • Acrylic copolymer (ii): n-butyl acrylate (BA) / methyl methacrylate (MMA) / 2-hydroxyethyl acrylate (HEA) / acrylic acid 86.0 / 8.0 / 5.0 / 1.
  • Heavy release film product manufactured by Lintec Co., Ltd., product name “SP-PET 382150”, provided with a release agent layer formed from a silicone release agent on one side of a polyethylene terephthalate (PET) film, thickness: 38 ⁇ m.
  • Light release film manufactured by Lintec Co., Ltd., product name “SP-PET 381031”, provided with a release agent layer formed from a silicone release agent on one side of a PET film, thickness: 38 ⁇ m.
  • Production Example 1 (Formation of adhesive layer (X1)) 5.0 parts by mass (solid content ratio) of the isocyanate crosslinking agent (i) is blended with 100 parts by mass of the solid content of the solution of the acrylic copolymer (i) which is a tacky resin, and diluted with toluene The mixture was uniformly stirred to prepare a pressure-sensitive adhesive composition (x1) having a solid content concentration (active ingredient concentration) of 25% by mass. Then, the prepared pressure-sensitive adhesive composition (x1) is applied on the surface of the release agent layer of the heavy release film to form a coating, and the coating is dried at 100 ° C. for 60 seconds to have a thickness of 10 ⁇ m. The pressure-sensitive adhesive layer (X1) was formed. The storage shear modulus G ′ (23) of the pressure-sensitive adhesive layer (X1) at 23 ° C. was 2.5 ⁇ 10 5 Pa.
  • Production Example 3 (Formation of intumescent base material (Y1-1)) A 2-hydroxyethyl acrylate is reacted with a terminal isocyanate urethane prepolymer obtained by reacting an ester type diol with isophorone diisocyanate (IPDI) to obtain a bifunctional acrylic urethane oligomer having a weight average molecular weight (Mw) of 5000. Obtained.
  • IPDI isophorone diisocyanate
  • thermally expandable particles (i) were blended in the energy ray-curable composition to prepare a solvent-free resin composition (y1) containing no solvent.
  • the content of the thermally expandable particles (i) was 20% by mass with respect to the total amount (100% by mass) of the resin composition (y1).
  • the prepared resin composition (y1) was applied onto the surface of the release agent layer of the light release film to form a coating film.
  • the coating film was irradiated with ultraviolet light under the conditions of cm 2 to cure the film, thereby forming an expandable substrate (Y1-1) having a thickness of 50 ⁇ m.
  • said illumination intensity and light quantity at the time of ultraviolet irradiation are the values measured using the illumination intensity and light quantity meter (The product made by EIT, product name "UV Power Puck II").
  • the storage elastic modulus E ′ at 23 ° C. of the expandable base material (Y1-1) obtained above is 5.0 ⁇ 10 8 Pa and the storage elastic modulus E ′ at 100 ° C. is 4.0 ⁇ 10
  • the storage elastic modulus E ′ at 6 Pa and 208 ° C. was 4.0 ⁇ 10 6 Pa.
  • the probe tack value of the expandable base material (Y1-1) was 2 mN / 5 mm ⁇ .
  • Production Example 4 (Preparation of adhesive sheet (A))
  • the surfaces of the pressure-sensitive adhesive layer (X1) formed in Production Example 1 and the expandable base material (Y1-1) formed in Production Example 3 are bonded to each other, and light peeling of the expandable base material (Y1-1) is performed.
  • the film was removed, and the pressure-sensitive adhesive layer (X1 ′) formed in Production Example 2 was bonded onto the surface of the expansible base material (Y1-1) exposed.
  • a pressure-sensitive adhesive sheet (A) was produced in which the light release film / pressure-sensitive adhesive layer (X1 ′) / expandable substrate (Y1-1) / pressure-sensitive adhesive layer (X1) / heavy release film was laminated in this order.
  • the outer surface of the release agent layer of a release film (product name: "SP-PET 3811” manufactured by Lintec Corporation) having a silicone release agent layer formed on one side of a polyethylene terephthalate (PET) film
  • the adhesive composition was applied and dried by heating to form an adhesive layer (X2) having a thickness of 10 ⁇ m on the release film.
  • a pressure-sensitive adhesive layer is attached to the exposed surface of the pressure-sensitive adhesive layer by bonding one side of a polyester-based polyurethane elastomer sheet (product name: Higres DUS 202, product name: 50 ⁇ m, product name by Shidam Co., Ltd.) as a substrate (Y2).
  • the adhesive sheet (B) (expand tape) was obtained in the state to which the peeling film was stuck.
  • Example 1 The semiconductor device was manufactured by the following method using the adhesive sheet (A) and the adhesive sheet (B) which were obtained above.
  • ⁇ Step (1)> The pressure-sensitive adhesive sheet (B) obtained in Production Example 5 was cut into a size of 210 mm ⁇ 210 mm. At this time, it cut
  • the peeling sheet is peeled off from the adhesive sheet (B), and a plurality of semiconductor chips (1800 pieces) obtained by dicing a semiconductor wafer (diameter: 150 mm, thickness: 350 ⁇ m) are formed on the circuit forming surface W1. It was stuck on the adhesive layer (X2) of the adhesive sheet (B) so that it might become an opposite side to the adhesive layer (X2). At this time, a group of semiconductor chips was transferred so as to be located at the center of the adhesive sheet (B). Moreover, the dicing line when dividing a semiconductor wafer into pieces was transferred so that it might become parallel or perpendicular
  • the expanding device has X axis directions (positive direction is + X axis direction, negative direction is ⁇ X axis direction) orthogonal to each other and Y axis direction (positive direction is + Y axis direction).
  • the negative direction is the ⁇ Y axis direction), and holding means for extending in each direction (ie, the + X axis direction, the ⁇ X axis direction, the + Y axis direction, the ⁇ Y axis direction) is provided.
  • the MD direction of the pressure-sensitive adhesive sheet (B) is aligned with the X-axis or Y-axis direction, and installed in the expanding device, and after holding each side of the pressure-sensitive adhesive sheet (B) by the holding means, Then, the pressure-sensitive adhesive sheet (B) was stretched to widen the intervals between the plurality of semiconductor chips attached on the pressure-sensitive adhesive layer (X2) of the pressure-sensitive adhesive sheet (B).
  • -Number of holding means 5 per side-Stretching speed: 5 mm / sec Stretching distance: Each side was stretched by 60 mm.
  • Step (3) From the surface on the substrate side of the pressure-sensitive adhesive sheet (B), ultraviolet light is irradiated at an illuminance of 230 mW / cm 2 and a light amount of 190 mJ / cm 2 to cure the pressure-sensitive adhesive layer and adhere to the pressure-sensitive adhesive sheet (A)
  • the semiconductor chip and the adhesive sheet (B) were separated.
  • a plurality of semiconductor chips mounted at regular intervals on the pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet (A) were obtained.
  • a sealing resin film (sealing material) is laminated on the adhesive surface (X1) and the plurality of semiconductor chips, and a vacuum heating and pressing laminator (“7024HP5” manufactured by ROHM and HAAS) is used.
  • the pressure-sensitive adhesive surface of the pressure-sensitive adhesive layer (X1) and the semiconductor chip were coated with a sealing material, and the sealing material was cured to prepare a cured sealing body.
  • sealing conditions are as follows. Preheating temperature: 100 ° C for both table and diaphragm Vacuum suction: 60 seconds Dynamic press mode: 30 seconds Static press mode: 10 seconds Sealing temperature: 180 ° C. (temperature lower than 208 ° C. which is the expansion start temperature of thermally expandable particles) Sealing time: 60 minutes
  • Step (4A-2)> After sealing, the pressure-sensitive adhesive sheet (A) was heated at 240 ° C. for 3 minutes, which is equal to or higher than the expansion start temperature (208 ° C.) of the thermally expandable particles, to separate the cured sealing body from the pressure-sensitive adhesive sheet (A). When the pressure-sensitive adhesive sheet (A) was separated, the pressure-sensitive adhesive sheet (A) could be separated at one time while being kept flat without being bent.
  • the manufacturing method of the present embodiment it is possible to easily separate the expandable tape from the expandable tape at once while maintaining the interval, and the separated chips are separated. It turns out that it can be easily provided to the next step (the sealing step). Furthermore, since the pressure-sensitive adhesive sheet (A) can significantly reduce the adhesive strength by expanding the expandable particles, the pressure-sensitive adhesive sheet (A) could be easily separated after the sealing step.
  • ultraviolet light was irradiated at an illuminance of 230 mW / cm 2 and a light amount of 190 mJ / cm 2 , and then the adhesive strength at 23 ° C. after ultraviolet irradiation was measured under the same conditions as described above.
  • the pressure-sensitive adhesive sheet (A) used in the present embodiment has a smaller adhesive force than the comparative pressure-sensitive adhesive sheet after irradiation with ultraviolet light after expansion of the expandable particles, and has excellent separability . Therefore, according to the manufacturing method of the present embodiment, for example, even in the case where the rearrangement step is performed as the next step, the semiconductor chip is separated more easily than the conventional ultraviolet irradiation type adhesive sheet, and subjected to the rearrangement step. It is possible.
  • Adhesive sheet (a) 1b Adhesive sheet (a) DESCRIPTION OF SYMBOLS 10 Alignment jig 11 accommodation part 11a Wall part of alignment jig 12 frame-like main body part 20 holding member 40 sealing material 41 hardening sealing material 45 peripheral part of semiconductor chip CP 50 hardening sealing body 50a surface 61 1st insulation Layer 62 second insulating layer 70 rewiring 70A external electrode pad 80 external terminal electrode 100 semiconductor device 200 expanding device 210 holding means CP semiconductor chip CPa side surface of semiconductor chip W1 circuit surface W2 circuit W3 internal terminal electrode

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

L'invention concerne un procédé de production de dispositifs semi-conducteurs, comprenant les étapes (1) à (3) dans l'ordre. Après l'étape (3), des particules expansibles dans une feuille adhésive (A) sont expansées et la feuille adhésive (A) est séparée d'une partie adhérée. Étape (1) : étape dans laquelle une feuille adhésive (B) comprenant un matériau de base (Y2) et une couche adhésive (X2) est étirée et des intervalles entre une pluralité de puces semi-conductrices montées sur la couche adhésive (X2) de la feuille adhésive (B) sont élargis. Étape (2) : étape dans laquelle une couche adhésive (X1) de la feuille adhésive est collée sur une surface située sur le côté opposé à une surface en contact avec la couche adhésive (X2) de la pluralité de puces semi-conductrices. Étape (3) : étape dans laquelle la feuille adhésive (B) et la pluralité de puces semi-conductrices collées à la feuille adhésive (A) sont séparées.
PCT/JP2018/041296 2017-11-16 2018-11-07 Procédé de production de dispositif semi-conducteur Ceased WO2019098101A1 (fr)

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KR1020207006569A KR102507691B1 (ko) 2017-11-16 2018-11-07 반도체 장치의 제조 방법

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EP4656350A1 (fr) * 2024-05-27 2025-12-03 Commissariat à l'Energie Atomique et aux Energies Alternatives Procédé d'élaboration d'un film de polymère épais sur un substrat

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JP2016127115A (ja) * 2014-12-26 2016-07-11 リンテック株式会社 半導体装置の製造方法
JP2017076748A (ja) * 2015-10-16 2017-04-20 リンテック株式会社 粘着シート及び半導体装置の製造方法

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TWI433545B (zh) 2007-10-30 2014-04-01 Nippon Telegraph & Telephone 影像編碼裝置及影像解碼裝置
JP6326589B2 (ja) * 2014-06-26 2018-05-23 Dic株式会社 両面粘着テープ及び物品
JP6673734B2 (ja) * 2016-03-29 2020-03-25 リンテック株式会社 ガラスダイシング用粘着シートおよびその製造方法

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JP2001226650A (ja) * 2000-02-16 2001-08-21 Nitto Denko Corp 放射線硬化型熱剥離性粘着シート、及びこれを用いた切断片の製造方法
JP2006160935A (ja) * 2004-12-09 2006-06-22 Nitto Denko Corp 被着物の加熱剥離方法及び被着物加熱剥離装置
JP2016127115A (ja) * 2014-12-26 2016-07-11 リンテック株式会社 半導体装置の製造方法
JP2017076748A (ja) * 2015-10-16 2017-04-20 リンテック株式会社 粘着シート及び半導体装置の製造方法

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Publication number Priority date Publication date Assignee Title
EP4656350A1 (fr) * 2024-05-27 2025-12-03 Commissariat à l'Energie Atomique et aux Energies Alternatives Procédé d'élaboration d'un film de polymère épais sur un substrat

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JP7185637B2 (ja) 2022-12-07
CN111295739B (zh) 2023-08-25
KR102507691B1 (ko) 2023-03-09
JPWO2019098101A1 (ja) 2020-10-01
CN111295739A (zh) 2020-06-16
TWI821214B (zh) 2023-11-11
TW201929157A (zh) 2019-07-16

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