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WO2019078206A8 - 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 - Google Patents

多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 Download PDF

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Publication number
WO2019078206A8
WO2019078206A8 PCT/JP2018/038501 JP2018038501W WO2019078206A8 WO 2019078206 A8 WO2019078206 A8 WO 2019078206A8 JP 2018038501 W JP2018038501 W JP 2018038501W WO 2019078206 A8 WO2019078206 A8 WO 2019078206A8
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
reflective film
reflective mask
multilayer reflective
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/038501
Other languages
English (en)
French (fr)
Other versions
WO2019078206A1 (ja
Inventor
和宏 浜本
笑喜　勉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to KR1020207007408A priority Critical patent/KR102785832B1/ko
Priority to SG11202002853TA priority patent/SG11202002853TA/en
Priority to JP2019549295A priority patent/JP7286544B2/ja
Priority to KR1020257009101A priority patent/KR20250046343A/ko
Priority to US16/756,727 priority patent/US11262647B2/en
Publication of WO2019078206A1 publication Critical patent/WO2019078206A1/ja
Publication of WO2019078206A8 publication Critical patent/WO2019078206A8/ja
Anticipated expiration legal-status Critical
Priority to US17/581,590 priority patent/US11681214B2/en
Priority to US18/142,223 priority patent/US12025911B2/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)

Abstract

多層反射膜に基準マークを形成した場合でも、多層反射膜の表面が汚染されることを防止することのできる、多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法を提供する。多層反射膜付き基板（１０）は、基板（１２）と、基板上に形成されたＥＵＶ光を反射する多層反射膜（１４）とを含む。多層反射膜付き基板の表面に、基準マーク（２０）が凹状に形成されている。基準マークは、略中心に溝部（２１）又は突起部（２３）を有する。溝部又は突起部の平面視における形状は、基準マークの形状と相似又は略相似である。
PCT/JP2018/038501 2017-10-17 2018-10-16 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 Ceased WO2019078206A1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020207007408A KR102785832B1 (ko) 2017-10-17 2018-10-16 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
SG11202002853TA SG11202002853TA (en) 2017-10-17 2018-10-16 Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device
JP2019549295A JP7286544B2 (ja) 2017-10-17 2018-10-16 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
KR1020257009101A KR20250046343A (ko) 2017-10-17 2018-10-16 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
US16/756,727 US11262647B2 (en) 2017-10-17 2018-10-16 Substrate with multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method
US17/581,590 US11681214B2 (en) 2017-10-17 2022-01-21 Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device
US18/142,223 US12025911B2 (en) 2017-10-17 2023-05-02 Reflective structure, reflective mask blank, reflective mask and method of manufacturing semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017201189 2017-10-17
JP2017-201189 2017-10-17

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US16/756,727 A-371-Of-International US11262647B2 (en) 2017-10-17 2018-10-16 Substrate with multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method
US17/581,590 Continuation US11681214B2 (en) 2017-10-17 2022-01-21 Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
WO2019078206A1 WO2019078206A1 (ja) 2019-04-25
WO2019078206A8 true WO2019078206A8 (ja) 2020-02-20

Family

ID=66174168

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/038501 Ceased WO2019078206A1 (ja) 2017-10-17 2018-10-16 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Country Status (6)

Country Link
US (3) US11262647B2 (ja)
JP (3) JP7286544B2 (ja)
KR (2) KR20250046343A (ja)
SG (1) SG11202002853TA (ja)
TW (3) TW202536526A (ja)
WO (1) WO2019078206A1 (ja)

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TW202511858A (zh) 2018-05-25 2025-03-16 日商Ｈｏｙａ股份有限公司 反射型光罩基底及反射型光罩
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Also Published As

Publication number Publication date
JP2023104997A (ja) 2023-07-28
KR20200064065A (ko) 2020-06-05
US20230266658A1 (en) 2023-08-24
TW202447325A (zh) 2024-12-01
WO2019078206A1 (ja) 2019-04-25
TWI889453B (zh) 2025-07-01
JP7688763B2 (ja) 2025-06-04
SG11202002853TA (en) 2020-05-28
JPWO2019078206A1 (ja) 2020-11-05
KR102785832B1 (ko) 2025-03-26
KR20250046343A (ko) 2025-04-02
US11262647B2 (en) 2022-03-01
JP7500828B2 (ja) 2024-06-17
US12025911B2 (en) 2024-07-02
US11681214B2 (en) 2023-06-20
TW202536526A (zh) 2025-09-16
JP7286544B2 (ja) 2023-06-05
JP2024114710A (ja) 2024-08-23
US20220146925A1 (en) 2022-05-12
TW201928503A (zh) 2019-07-16
US20200249558A1 (en) 2020-08-06
TWI851543B (zh) 2024-08-11

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