[go: up one dir, main page]

WO2019066466A1 - Amorphous nanostructure composed of inorganic polymer, and preparation method therefor - Google Patents

Amorphous nanostructure composed of inorganic polymer, and preparation method therefor Download PDF

Info

Publication number
WO2019066466A1
WO2019066466A1 PCT/KR2018/011382 KR2018011382W WO2019066466A1 WO 2019066466 A1 WO2019066466 A1 WO 2019066466A1 KR 2018011382 W KR2018011382 W KR 2018011382W WO 2019066466 A1 WO2019066466 A1 WO 2019066466A1
Authority
WO
WIPO (PCT)
Prior art keywords
bonding
amorphous
hydrogen
amorphous nanostructure
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2018/011382
Other languages
French (fr)
Korean (ko)
Inventor
허가현
김민석
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea Institute of Science and Technology KIST
Original Assignee
Korea Institute of Science and Technology KIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020180097250A external-priority patent/KR102432093B1/en
Application filed by Korea Institute of Science and Technology KIST filed Critical Korea Institute of Science and Technology KIST
Priority to US16/646,144 priority Critical patent/US11167262B2/en
Priority to CN201880058437.7A priority patent/CN111051390B/en
Publication of WO2019066466A1 publication Critical patent/WO2019066466A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J20/00Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
    • B01J20/22Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising organic material
    • B01J20/223Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising organic material containing metals, e.g. organo-metallic compounds, coordination complexes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J20/00Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
    • B01J20/28Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
    • B01J20/28002Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties characterised by their physical properties
    • B01J20/28004Sorbent size or size distribution, e.g. particle size
    • B01J20/28007Sorbent size or size distribution, e.g. particle size with size in the range 1-100 nanometers, e.g. nanosized particles, nanofibers, nanotubes, nanowires or the like
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J20/00Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
    • B01J20/28Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
    • B01J20/28014Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties characterised by their form
    • B01J20/28016Particle form
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J20/00Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
    • B01J20/30Processes for preparing, regenerating, or reactivating
    • B01J20/3085Chemical treatments not covered by groups B01J20/3007 - B01J20/3078
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G79/00Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures

Definitions

  • the present invention relates to an inorganic polymer, and more particularly, to an amorphous nanostructure composed of an inorganic polymer and a method for producing the same.
  • Nanomaterials having amorphous properties can be applied to various fields such as bio-field, catalyst, thermoelectric material field, electrochemical device such as secondary cell, absorber of toxic substance, and serum separation.
  • thermoelectric material such as Cu 2-x S or Cu 2-x Se may have a sudden change in the figure of merit (ZT) of the thermoelectric material depending on the fine composition change (x change).
  • the composition adjustment method is to dissolve the Cu, S or Se element to the desired composition and sinter it again, which makes it difficult to localize the composition uniformly. Further, the process of melting each of the components of the thermoelectric material consumes much time and cost. For Cu, S or Se, a melting temperature of 1400 K or more is required. In addition, it takes more time than several hours for the melting to take place over time.
  • Another method is to compound Cu with S or Se through high-energy ball milling, which is also time consuming and costly. This method is also difficult to induce a change in the local composition.
  • a first object of the present invention is to provide an amorphous nanostructure formed of an inorganic polymer and capable of local crystallization.
  • a method for fabricating an amorphous nanostructure to achieve the first technical object According to a second aspect of the present invention, there is provided a method for fabricating an amorphous nanostructure to achieve the first technical object.
  • an amorphous nanostructure comprising an inorganic polymer represented by the following general formula (1).
  • M represents a transition metal
  • X represents a halogen element
  • CF represents a bonding functional group containing a hydrogen element and a hydrogen bonding element
  • n has a value of 10 to 500,000 as the number of repetitions.
  • a method of manufacturing a semiconductor device comprising: preparing a metal precursor, a functional group for bonding, and a polar solvent; And mixing the metal precursor, the functional group for bonding and the polar solvent to form an amorphous nanostructure formed by hydrogen bonding between the inorganic polymers of Formula 1.
  • amorphous nanowires or spherical nanoparticles can be formed through a simple manufacturing method.
  • the amorphous nanostructure is formed through hydrogen bonding between inorganic polymers, and the inorganic polymer has a compound having a bonding structure of a transition metal and a halogen element in a main chain and an element capable of hydrogen and hydrogen bonding in a side chain.
  • the hydrogen contained in the side chain forms a hydrogen bond with an element capable of hydrogen bonding or a halogen element through which the inorganic polymer is combined with each other to form an amorphous nanowire.
  • the inorganic polymer may be formed into spherical nanoparticles.
  • the halogen element is excluded, and the functional group for binding having the hydrogen element and the hydrogen bonding element and the transition metal are mutually bonded.
  • the amorphous nanowires formed exhibit excellent adsorption capacity for metal ions and exhibit different crystallization behavior depending on the method of energy application.
  • the amorphous nanowires have a function of absorbing light in a specific wavelength band such as an ultraviolet region. As a result, it can be utilized as various functional materials.
  • 1 is a molecular formula for describing an inorganic polymer according to a preferred embodiment of the present invention.
  • FIG. 2 is a schematic view showing the inorganic polymer of FIG. 1 according to a preferred embodiment of the present invention.
  • FIG. 3 is a flowchart illustrating a method of fabricating an amorphous nanostructure according to a preferred embodiment of the present invention.
  • FIG. 5 is a graph showing DSC and TGA results for the amorphous nanowires produced according to Production Example 1 of the present invention.
  • FIG. 6 is a graph showing the results of XRD analysis of the amorphous nanowires according to Production Example 1 of the present invention after heat treatment and annealing temperature.
  • 11 and 12 are EDS mapping images before and after electron beam irradiation according to Production Example 3 of the present invention.
  • 1 is a molecular formula for describing an inorganic polymer according to a preferred embodiment of the present invention.
  • M is a transition metal, the oxidation number is 1, and X means a halogen element.
  • CF is a compound having a hydrogen bonding element as a functional group for bonding and having a hydrogen bonding element capable of forming a hydrogen bond with another inorganic polymer.
  • n is 10 to 500,000 in terms of repeating units.
  • the transition metal is selected from the group consisting of copper, manganese, iron, cadmium, cobalt, nickel, zinc, mercury, molybdenum, Ti), magnesium (Mg), chromium (Cr), and antimony (Sb).
  • the halogen element may include fluorine (F), chlorine (Cl), bromine (Br), iodine (I) or a combination thereof.
  • the halogen element is bonded to the transition metal and forms a main chain in the inorganic polymer.
  • the functional group for bonding is composed of a compound having an element capable of forming a hydrogen bond with a hydrogen element and other inorganic polymer.
  • the functional group for bonding must have a hydrogen element at the end of the chemical bond.
  • This hydrogen element is bound to an element such as nitrogen (N), oxygen (O), or fluorine (F), which has a higher electronegativity than a hydrogen atom.
  • the functional group for bonding has another element which forms a hydrogen bond. Possible elements are a group 15 element or a group 16 element. They have a non-covalent electron pair and are chemically bonded to the transition metal.
  • the group 15 element or the group 16 element which can be used for the functional group for bonding includes at least one element selected from the group consisting of oxygen (O), sulfur (S), nitrogen (N), selenium (Se) and tellurium .
  • a hydrogen atom attached to an element having a high electronegativity can hydrogen bond with a non-covalent electron pair of a group 15 element or a group 16 element of another adjacent inorganic polymer. This process forms an amorphous nanostructure.
  • the functional group for bonding is preferably thiourea, urea, selenourea, tellurourea or a thiol compound.
  • the transition metal and the halogen element form a main chain, and the functional group for bonding which is bonded to the transition metal forms a side chain.
  • the transition metal has an oxidation number of +1.
  • FIG. 2 is a schematic view showing the inorganic polymer of FIG. 1 according to a preferred embodiment of the present invention.
  • a specific inorganic polymer forms a hydrogen bond with an adjacent inorganic polymer and forms a nanowire according to a hydrogen bond.
  • the hydrogen bond is formed by a hydrogen element present in the functional group for bonding, which is bonded to an element whose electronegativity is larger than hydrogen. That is, the hydrogen element becomes a positive charge and bonds with the non-covalent electron pair of the other inorganic polymer.
  • the hydrogen bond may be formed between a hydrogen element of a functional group for binding an inorganic polymer and a halogen element of another inorganic polymer, or may be formed between a hydrogen element of a functional group for bonding and a Group 15 element or a Group 16 element of another inorganic polymer .
  • the inorganic polymer binds to the adjacent inorganic polymer and forms an amorphous nanowire.
  • Cu is used as a transition metal
  • Cl is used as a halogen element
  • thiourea is used as a functional group for bonding. Therefore, the main chain of the inorganic polymer is CuCl, and thiourea is bound with Cu as a central metal. The sulfur (S) of thiourea forms bonds with the central metal Cu.
  • the hydrogen element has a capability of hydrogen bonding because it is bonded to a nitrogen element having a higher electronegativity.
  • the first is the case where the hydrogen atom of the thiourea forming the side chain is hydrogen-bonded to the halogen element Cl of the main chain.
  • the hydrogen atom of thiourea is hydrogen bonded to the sulfur of the side chain.
  • the inorganic polymers are aggregated or form a certain volume with a predetermined volume by hydrogen bonding.
  • the amorphous nanostructure formed by hydrogen bonding has a form of a wire, and may have a form in which a hydrogen-halogen element bond and a hydrogen-16 group element / hydrogen-15 group element bond are mixed.
  • FIG. 3 is a flowchart illustrating a method of fabricating an amorphous nanostructure according to a preferred embodiment of the present invention.
  • a metal precursor, a functional group for bonding, and a polar solvent are prepared (S100).
  • the metal precursor comprises a transition metal, and the transition metal should be capable of having multiple oxidation states.
  • the transition metals used are copper, manganese, iron, cadmium, cobalt, nickel, zinc, mercury, molybdenum, , At least one element selected from the group consisting of titanium (Ti), magnesium (Mg), chromium (Cr) and antimony (Sb).
  • the metal precursor includes the metal element and the halogen element mentioned, and has a property of dissolving in a polar solvent.
  • the metal precursor may include at least one selected from the group consisting of chloride, nitrate, sulfate, acetate, acetylacetonate, formate, hydroxide, oxide and hydrates thereof containing the transition metal, do.
  • the functional group for bonding needs to have a hydrogen element capable of hydrogen bonding and an element capable of forming a hydrogen bond with the hydrogen element.
  • Suitable functional groups for bonding are preferably thiourea, urea, selenium urea, tellurium urea or a thiol compound.
  • the functional group for bonding is most preferably a group 15 element or a group 16 element, but may include all elements of an environment capable of having a non-covalent electron pair. That is, a wide variety of choices may be possible as required by those skilled in the art besides the compounds mentioned.
  • the polar solvent to be prepared is for dissolving or dispersing the metal precursor and the functional group for bonding.
  • Polar solvents that can be used include alcoholic, glycolic, polyglycolic, or water. Alcohols include methanol, ethanol, propanol or butanol. Examples of the polyglycol system include ethylene glycol, diethylene glycol, triethylene glycol, and the like.
  • a pH adjuster may be added to the polar solvent. This controls the polarity of the synthesis solution consisting of the dissolved metal precursor, the functional group for bonding and the polar solvent. The diameter or length of the nanostructure produced according to the change of the polarity of the synthesis solution may be changed to obtain various types of nanostructures.
  • Examples of the pH regulator include acids or bases and include acids and bases such as hydrochloric acid, hydrofluoric acid, formic acid, acetic acid, hydrogensic acid, sulfuric acid, nitric acid, carbonic acid, amino acid, citric acid, ascorbic acid, potassium hydroxide, lithium hydroxide, Strontium hydroxide, copper hydroxide, beryllium hydroxide, methoxylated ion, ammonia, amidated ion, methyl anion, cyanide ion, acetic acid anion or formic acid anion may be used.
  • acids or bases include acids and bases such as hydrochloric acid, hydrofluoric acid, formic acid, acetic acid, hydrogensic acid, sulfuric acid, nitric acid, carbonic acid, amino acid, citric acid, ascorbic acid, potassium hydroxide, lithium hydroxide, Strontium hydroxide, copper hydroxide, beryllium hydroxide, methoxylated ion, ammonia, amidated
  • a synthesis solution containing a metal precursor, a functional group-containing compound for bonding and a polar solvent is formed. Also, as mentioned, a pH adjusting agent may be added to the synthesis solution.
  • the amorphous nanostructures in the synthesis solution may be prepared by mixing, stirring, sonicating, shaking, vibrating, agitating or flowing the synthesis solution. .
  • reaction temperature in the synthesis solution may be set from 0 ° C to the boiling point of the polar solvent, preferably from 5 ° C to 50 ° C, and more preferably from 10 ° C to 40 ° C. Since the temperature range is at room temperature, a person skilled in the art can induce the reaction without limit of temperature.
  • the oxidation number of the metal precursor decreases to have a value of +1, and the main chain of the center metal and the halogen element is formed. That is, the transition metal constituting the metal precursor in the state before the reaction may have various oxidation numbers of 1 or more, but the transition metal constituting the metal precursor through the reaction has an oxidation number of +1 and acts as a center metal in the inorganic polymer do. Further, the halogen element contained in the metal precursor is bonded to the transition metal or the center metal to form the main chain of the inorganic polymer. During the formation of the main chain, some halogen elements that do not bind to the center metal may be released and suspended in the ionic state in the synthesis solution.
  • the functional group for bonding also forms a chemical bond with the center metal.
  • the bonding functional group donates a non-covalent electron pair to the center metal.
  • the functional group for bonding has a group 15 element or a group 16 element in addition to a hydrogen element. These elements are bonded by donating a pair of non-covalent electrons to a central metal, and the hydrogen element forms a hydrogen bond with other synthesized inorganic polymer.
  • inorganic polymers are synthesized and amorphous nanostructures are formed by forming hydrogen bonds between inorganic polymers.
  • nanowires formed using ethanol as a polar solvent according to Production Example 1 are composed of Cu, S, N and Cl. Further, the hydrogen atom can not be identified as the XPS phase, so a description thereof is omitted.
  • the binding energy of p orbital of Cu is started in the graph of FIG. 4 (a), and since there is no distinct peak between Cu 2p 1/2 and Cu 2p 3/2 , the oxidation number of Cu is + 1. That is, Cu forms a main chain by a single bond with Cl, which is a halogen element in the periphery.
  • Graph (b) shows the state in which thiourea is bound to Cu with the detection peak of sulfur (S).
  • the graph (c) shows the presence of nitrogen, which can confirm the state of the hydrogen bonded with nitrogen in the state that the nitrogen atom of thiourea is bonded to the inorganic polymer without releasing.
  • Graph (d) shows the presence of the halogen element Cl, and graph (e) shows the state where Cu and thiourea are directly bonded.
  • the molecular formula of the inorganic polymer of FIG. 1 can be confirmed, and formation of amorphous nanowires by hydrogen bonding can be confirmed.
  • the oxidation number of Cu is mainly +1, and it can be seen that there exists a valence of Cu +1 . That is, the oxidation number of Cu in CuCl 2 is +2, but when it is synthesized with an amorphous nanostructure, the oxidation number of Cu decreases and has a value of +1, which indicates that Cu-Cl bonds are formed in the main chain of the inorganic polymer .
  • FIG. 5 is a graph showing DSC and TGA results for the amorphous nanowires produced according to Production Example 1 of the present invention.
  • DSC Different Scanning Calorimetry analysis is a function of the temperature difference between the energy of the sample and the reference material. 5
  • an exothermic reaction is observed in the vicinity of 200 ° C. This indicates that the amorphous nanowire starts crystallization at around 200 ° C.
  • the nanowire exhibits a strong endothermic reaction at around 250 ° C. This indicates that decomposition occurs according to the endothermic reaction in the synthesized amorphous nanowires. That is, some thiourea in the amorphous nanowire is separated from the main chain.
  • a TGA (Thermogravimetry) analysis is performed, which is a measurement of the mass change of the sample as a function of temperature while changing the temperature of the sample to be measured.
  • the weight is rapidly reduced at a temperature of 250 ° C. It is interpreted that the amorphous nanowire separates thiourea through endothermic action. At a temperature exceeding 250 ° C, the weight of the sample decreases gradually, and it is understood that the elements that are attached to the surface are slowly separated.
  • the amorphous nanowire of Production Example 1 has a crystallization process at 200 ° C, and the thiourea constituting the side chain of the inorganic polymer is separated by the endothermic reaction at a temperature of about 250 ° C, and the weight is rapidly reduced. There is no meaningful change in the change of the composition in the range of other temperatures.
  • FIG. 6 is a graph showing the results of XRD analysis of the amorphous nanowires according to Production Example 1 of the present invention after heat treatment and annealing temperature.
  • the amorphous nanowires of the present invention are collected by a centrifugal separator and heat-treated at 150 ° C, 200 ° C, 300 ° C, 400 ° C, and 500 ° C, respectively. Respectively. And does not have a distinct peak corresponding to the crystallized material at a temperature lower than 200 ° C.
  • distinct peaks associated with crystallization begin to appear, which is linked to the crystallization process at around 200 ° C in the DSC results of FIG. From this time, peaks corresponding to CuS 2 and Cu 2 S start to appear. This indicates that some of the inorganic polymer structures were locally crystallized into CuS 2 and Cu 2 S, respectively, with progress of crystallization.
  • FIG. 7 shows images before and after the heat treatment of amorphous nanowires according to Production Example 1 of the present invention.
  • amorphous nanowires are disclosed before heat treatment. Further, after the heat treatment is performed at 200 ⁇ ⁇ , the shape of the nanowire disappears, and the structure in which the plate-shaped structures cohere with each other is disclosed. That is, part of the Cu-Cl bonds forming the main chain are destroyed, and the nanowires are separated from each other or combined with the adjacent nanowires to form a plate-like coagulated form. However, it is considered that the coagulated form of the plate forms crystallinity, but this crystallinity does not form a perfect single crystal.
  • crystalline phases appear in a part or a substantial region of the plate-like shape, and they can be judged as polycrystals depending on the observation, or it can be judged that some crystal grains are formed in the bulk of the amorphous state. Since these are not entirely single crystals, they are referred to as amorphous nanostructures for convenience of explanation in this embodiment.
  • nanowires synthesized by using ethylene glycol (polarity 0.790), diethylene glycol (polarity 0.713) and triethylene glycol (polarity 0.704) in place of ethanol as the polar solvent in Production Example 1 are compared and observed.
  • the diameter and length of the synthesized nanowires decrease. This is due to the fact that highly polar solvents interfere with the hydrogen bonding between the inorganic polymers synthesized and prevent the bonding functional groups from participating in the synthesis. That is, it can be seen that the diameter and length of the nanostructure can be controlled by adjusting the polarity of the solvent.
  • a nano structure is synthesized by using water (polarity 1.0) instead of ethanol in Example 1 as a polar solvent. It is also compared with the nanostructures produced by Example 1.
  • ethanol polarity 1.0
  • nanowires are synthesized.
  • spherical nanoparticles having a uniform size are formed instead of the nanowire.
  • the spherical nanoparticles have a diameter of 10 nm or less. This is due to the phenomenon that a large polar solvent interferes with the bonding or formation of the polymer main chain and the bonding functional group is bonded to the central metal. For the reasons described, spherical nanoparticles are formed.
  • Table 1 shows the data of the nanowires and spherical nanoparticles prepared in FIG. 9 measured by EDS, and has an error range of ⁇ 10% due to the nature of the measurement.
  • the hydrogen atom is excluded from the measurement object.
  • the nanostructure using ethanol as a polar solvent is a nanowire type
  • Cu-Cl forms a main chain
  • S as a group 16 element is bound to Cu, which is a central metal.
  • thiourea acts as a functional group for bonding because N of thiourea has a composition ratio of 2.
  • an amorphous nanowire formed according to Production Example 1 is used as the amorphous nanowire.
  • the amorphous state is reformed locally to crystalline.
  • grain boundaries appear in the form of crystal grains.
  • the crystallized grain boundary is identified as CuCl. That is, the crystal grains are bound to CuCl, and thiourea, which contributes to the formation of amorphous nanowires, is separated from Cu, which is a center metal.
  • 11 and 12 are EDS mapping images before and after electron beam irradiation according to Production Example 3 of the present invention.
  • an EDS mapping image of an amorphous nanowire formed according to Preparation Example 1 in a state before electron beam irradiation is disclosed. Referring to FIG. 11, it can be seen that Cu, S, N and Cl are evenly distributed throughout the nanowire before the electron beam is irradiated.
  • the crystallization progresses in the local region of the nanowire after the electron beam irradiation.
  • Cl appears intensely in the crystallization region, which is a local region.
  • Cu, N and S are evenly distributed in the nanowire.
  • Cu and Cl preferentially crystallize by the irradiation of the electron beam.
  • the oxidation number of Cu keeps monovalent because the crystallized part is CuCl.
  • the halogen element Cl forming the main chain of the inorganic polymer in the amorphous nanowire synthesized in Production Example 1 is replaced with another halogen element Br, and the thiourea forming the side chain is replaced with selenium urea.
  • the production conditions of the nanowires are the same as those described in Production Example 1. [ That is, CuBr 2 and selenium urea are mixed, and ethanol is used as a polar solvent.
  • the molar concentration of the precursor used in each of the mixtures was the same as in Preparation Example 1. For example, in the experiment in which Cl in the main chain was replaced with Br, 84.6 mg of CuBr 2 and 50 mg of thiourea were mixed with 80 ml of ethanol.
  • FIG 13 shows EDS mapping images of the nanowires produced by the elements substituted according to Production Example 4 of the present invention.
  • Evaluation Example 1 Evaluation of adsorption capacity of nanowires
  • the nanowire produced according to Preparation Example 1 was confirmed to have adsorption ability to other elements or chemicals. Particularly, the adsorption capacity for a heterogeneous material is achieved by mixing a solution in which metal ions or toxic anion molecules are dissolved, with the amorphous nanowires of Production Example 1 above.
  • an adsorption EDS mapping image is shown in a solution in which 5 wt% of Pt atoms is dissolved in the nanowires prepared in Production Example 1.
  • An aqueous solution containing PtCl 4 is used to evaluate the ability of the nanowire to adsorb to the Pt atom, and nanowires are mixed in the aqueous solution.
  • the Pt atoms in the aqueous solution are dissolved in the cation at 5 wt%.
  • the EDS mapping image it can be seen that the Pt atoms are evenly adsorbed on the nanowires.
  • an EDS mapping image adsorbed on the nanowire of Production Example 1 is disclosed in a solution in which 10 wt% of Pt atoms is dissolved in the nanowire produced in Production Example 1.
  • FIG. In the EDS mapping image it can be seen that Pt atoms are evenly adsorbed on the nanowires.
  • the solution in which Pt atoms are dissolved is a solution in which PtCl 4 is dissolved in an aqueous solution.
  • 16 is a STEM image and an EDS mapping image containing Ag elements at 2.4 at.% (A), 16.1 at.%, 30.1 at.% And 85.6 at.%, Respectively.
  • the element is doped to the atomic level as shown in (A), and as the amount of the Ag precursor is increased, the island shape is formed in the nanowire like (B). If the amount of the Ag precursor is further increased, the nanowire will have a nanowire shape containing nanoparticles of several tens nanometers at the edge of the nanowire (C). If the absorption amount exceeds 40 at.%, The original shape of the nanowire disappears D).
  • 17 is an image showing the result of mixing amorphous nanowires of Production Example 1 with an aqueous solution (116 mg / l) in which K 2 CrO 4 was dissolved. 17 that molecular compounds such as chromate are well adsorbed on the nanowires.
  • the nanowire used is the amorphous nanowire according to Preparation Example 1 above.
  • Table 2 below adsorbed metals and solvents included in the materials used and the materials used are disclosed.
  • the 16 metal elements are uniformly adsorbed to the amorphous nanowires at the atomic level.
  • the amorphous nanowire can easily adsorb metal or metal ion at an atomic unit, and has adsorbability to the form of metal salt.
  • the amorphous nanowire uses the nanowire according to Production Example 1 above.
  • the absorbance is evaluated while changing the wavelength of the incident light.
  • the nanowire strongly absorbs incident light. Accordingly, it can be seen that the amorphous nanowire of the present invention can be used as an optical filter that absorbs or blocks light of a specific band.
  • amorphous nanowires or spherical nanoparticles can be formed by a simple manufacturing method.
  • a nanostructure is formed through the formed inorganic polymer.
  • the inorganic polymer has a hydrogen element attached to an element having a binding structure of a transition metal and a halogen element in the main chain and an electronegativity higher than hydrogen having a hydrogen bonding ability in the side chain . It also has Group 15 and Group 16 elements used for hydrogen bonding.
  • the hydrogen contained in the side chain forms a hydrogen bond with an element capable of hydrogen bonding or a halogen element through which the inorganic polymer is combined with each other to form an amorphous nanowire.
  • the inorganic polymer may be formed into spherical nanoparticles.
  • the halogen element is excluded, and the functional group for binding having the hydrogen element and the hydrogen bonding element and the transition metal are mutually bonded.
  • the amorphous nanowires formed exhibit excellent adsorption ability to metal ions and crystallize into other phases upon application of energy.
  • the amorphous nanowires have a function of absorbing light in a specific wavelength band such as an ultraviolet region. As a result, it can be utilized as various functional materials.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)

Abstract

An amorphous nanostructure and a method for preparing the amorphous nanostructure are disclosed. The amorphous nanostructure has a transition metal and a halogen atom in the main chain thereof, and the transition metal has an oxidation number of +1. In addition, an inorganic polymer forming the amorphous nanostructure forms a hydrogen bond with an adjacent inorganic polymer. The inorganic polymer has, in the side chain thereof, hydrogen and an element for a hydrogen bond in order to form a hydrogen bond. Various characteristics can be identified thereby.

Description

무기 고분자로 이루어진 비정질 나노구조체 및 그 제조방법Amorphous nanostructure comprising inorganic polymer and method for producing the same

본 발명은 무기 고분자에 관한 것으로, 더욱 상세하게는 무기 고분자로 구성된 비정질 나노구조체 및 이의 제조방법에 관한 것이다.The present invention relates to an inorganic polymer, and more particularly, to an amorphous nanostructure composed of an inorganic polymer and a method for producing the same.

비정질 특성을 갖는 나노소재는 바이오분야, 촉매, 열전소재분야, 이차전지 등의 전기화학소자, 독성물질의 흡수체 및 혈청 분리 등 다양한 분야에 응용될 수 있다. Nanomaterials having amorphous properties can be applied to various fields such as bio-field, catalyst, thermoelectric material field, electrochemical device such as secondary cell, absorber of toxic substance, and serum separation.

열전소재분야에서 Cu2-xS 또는 Cu2-xSe와 같은 열전소재는 미세한 조성의 변화(x의 변화)에 따라 열전소재의 성능지수(ZT: figure of merit)가 급격하게 변할 수 있다. In the field of thermoelectric materials, the thermoelectric material such as Cu 2-x S or Cu 2-x Se may have a sudden change in the figure of merit (ZT) of the thermoelectric material depending on the fine composition change (x change).

현재 제시된 조성 조정의 방법은 Cu, S 또는 Se 원소를 원하는 조성에 맞게 녹이고 그것을 다시 소성 (sintering) 하는 방법인데, 이 방법으로는 국부적으로 조성을 불균일하게 하기 어렵다. 또한, 열전소재의 구성물 각각을 용융(melting)하는 과정은 많은 시간과 비용이 소모된다. Cu, S 또는 Se의 경우 1400 K 혹은 그 이상의 용융 온도가 필요하다. 또한 시간적으로도 용융을 위해 수 시간 이상의 공정시간이 필요하다. Currently, the composition adjustment method is to dissolve the Cu, S or Se element to the desired composition and sinter it again, which makes it difficult to localize the composition uniformly. Further, the process of melting each of the components of the thermoelectric material consumes much time and cost. For Cu, S or Se, a melting temperature of 1400 K or more is required. In addition, it takes more time than several hours for the melting to take place over time.

다른 방법으로 고에너지 볼밀링(high-energy ball milling)을 통해 Cu와 S, Se를 화합물화를 하는 방법이 있는데 이 방법도 많은 시간과 비용이 소비된다. 이 방법 역시 국부적인 조성의 변화를 유도하기 어렵다. Another method is to compound Cu with S or Se through high-energy ball milling, which is also time consuming and costly. This method is also difficult to induce a change in the local composition.

따라서, 다양한 응용분야에 적용가능하고, 결정화 물질의 조성 조정이 가능한 비정질 나노구조체의 개발이 요구된다.Therefore, it is required to develop an amorphous nano structure that can be applied to various application fields and can control the composition of the crystallization material.

본 발명이 이루고자 하는 제1 기술적 과제는 무기 고분자로 구성되며, 국부적인 결정화가 가능한 비정질 나노구조체를 제공하는데 있다.A first object of the present invention is to provide an amorphous nanostructure formed of an inorganic polymer and capable of local crystallization.

또한, 본 발명이 이루고자 하는 제2 기술적 과제는 상기 제1 기술적 과제를 달성하기 위한 비정질 나노구조체의 제조방법을 제공하는데 있다.According to a second aspect of the present invention, there is provided a method for fabricating an amorphous nanostructure to achieve the first technical object.

상술한 제1 기술적 과제를 달성하기 위한 본 발명은, 하기의 화학식 1의 무기 고분자를 포함하는 비정질 나노구조체를 제공한다.According to an aspect of the present invention, there is provided an amorphous nanostructure comprising an inorganic polymer represented by the following general formula (1).

[화학식 1][Chemical Formula 1]

Figure PCTKR2018011382-appb-I000001
Figure PCTKR2018011382-appb-I000001

상기 화학식 1에서 M은 전이 금속, X는 할로겐 원소를 나타내며, CF는 수소 원소 및 수소 결합용 원소를 포함하는 결합용 관능기를 나타내고, n은 반복횟수로 10 내지 500,000의 값을 가진다.In the above formula (1), M represents a transition metal, X represents a halogen element, CF represents a bonding functional group containing a hydrogen element and a hydrogen bonding element, and n has a value of 10 to 500,000 as the number of repetitions.

상술한 제2 기술적 과제를 달성하기 위한 본 발명은, 금속 전구체, 결합용 관능기 및 극성 용매를 준비하는 단계; 및 상기 금속 전구체, 상기 결합용 관능기 및 상기 극성 용매를 혼합하여 상기 화학식 1의 무기 고분자간의 수소결합에 의해 형성된 비정질 나노구조체를 형성하는 단계를 포함하는 비정질 나노구조체의 제조방법을 제공한다.According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: preparing a metal precursor, a functional group for bonding, and a polar solvent; And mixing the metal precursor, the functional group for bonding and the polar solvent to form an amorphous nanostructure formed by hydrogen bonding between the inorganic polymers of Formula 1.

상술한 본 발명에 따르면, 간단한 제조방법을 통해 비정질 나노와이어 또는 구형의 나노입자를 형성할 수 있다. 무기 고분자간의 수소 결합을 통해 상기 비정질 나노구조체는 형성되며, 무기 고분자는 주쇄에 전이금속과 할로겐 원소의 결합구조를 가지고, 측쇄에 수소 및 수소 결합이 가능한 원소를 가지는 화합물를 가진다. 측쇄에 포함된 수소는 수소 결합이 가능한 원소 또는 할로겐 원소와 수소 결합을 형성하고, 이를 통해 무기 고분자는 상호 결합되어 비정질 나노와이어로 형성된다. 또한, 형성과정에 도입되는 극성 용매의 극성에 의존하여 무기 고분자는 구형의 나노입자로 형성될 수 있다. 구형의 나노입자로 형성되는 경우, 할로겐 원소는 배제되며, 수소 원소 및 수소 결합용 원소를 가지는 결합용 관능기와 전이금속은 상호 결합된다.According to the present invention described above, amorphous nanowires or spherical nanoparticles can be formed through a simple manufacturing method. The amorphous nanostructure is formed through hydrogen bonding between inorganic polymers, and the inorganic polymer has a compound having a bonding structure of a transition metal and a halogen element in a main chain and an element capable of hydrogen and hydrogen bonding in a side chain. The hydrogen contained in the side chain forms a hydrogen bond with an element capable of hydrogen bonding or a halogen element through which the inorganic polymer is combined with each other to form an amorphous nanowire. In addition, depending on the polarity of the polar solvent introduced in the formation process, the inorganic polymer may be formed into spherical nanoparticles. When formed of spherical nanoparticles, the halogen element is excluded, and the functional group for binding having the hydrogen element and the hydrogen bonding element and the transition metal are mutually bonded.

형성된 비정질 나노와이어는 금속 이온에 대해 뛰어난 흡착 능력을 나타내며, 에너지의 인가의 방법에 따라 다른 결정화 거동을 보인다. 또한, 비정질 나노와이어는 자외선 영역 등 특정의 파장 대역에서 광을 흡수하는 기능을 가진다. 이를 통해 다양한 기능성 소재로 활용될 수 있다.The amorphous nanowires formed exhibit excellent adsorption capacity for metal ions and exhibit different crystallization behavior depending on the method of energy application. In addition, the amorphous nanowires have a function of absorbing light in a specific wavelength band such as an ultraviolet region. As a result, it can be utilized as various functional materials.

도 1은 본 발명의 바람직한 실시예에 따른 무기 고분자를 설명하기 위한 분자식이다.1 is a molecular formula for describing an inorganic polymer according to a preferred embodiment of the present invention.

도 2는 본 발명의 바람직한 실시예에 따라 상기 도 1의 무기 고분자를 도시한 모식도이다.2 is a schematic view showing the inorganic polymer of FIG. 1 according to a preferred embodiment of the present invention.

도 3은 본 발명의 바람직한 실시예에 따른 비정질 나노구조체를 제조하는 방법을 설명하기 위한 흐름도이다.3 is a flowchart illustrating a method of fabricating an amorphous nanostructure according to a preferred embodiment of the present invention.

도 4는 본 발명의 제조예 1에 따른 비정질 나노와이어의 XPS 분석 그래프들이다.4 is XPS analysis graphs of amorphous nanowires according to Production Example 1 of the present invention.

도 5는 본 발명의 제조예 1에 따라 제조된 비정질 나노와이어에 대한 DSC 및 TGA 결과를 도시한 그래프이다.5 is a graph showing DSC and TGA results for the amorphous nanowires produced according to Production Example 1 of the present invention.

도 6은 본 발명의 제조예 1의 비정질 나노와이어에 대해 열처리를 수행하고 열처리 온도에 따른 XRD 분석 결과를 도시한 그래프들이다.6 is a graph showing the results of XRD analysis of the amorphous nanowires according to Production Example 1 of the present invention after heat treatment and annealing temperature.

도 7은 본 발명의 제조예 1에 따른 비정질 나노와이어의 열처리 전후를 도시한 SEM 이미지들이다.7 is SEM images showing the amorphous nanowires before and after the heat treatment according to Production Example 1 of the present invention.

도 8은 본 발명의 제조예 2에 의해 제조된 나노와이어들을 동일 배율로 촬영한 SEM 이미지이다.8 is an SEM image of the nanowires produced in Production Example 2 of the present invention at the same magnification.

도 9는 본 발명의 제조예 2에 의해 극성 용매로 에탄올과 물을 사용한 경우의 제조된 나노구조체를 도시한 이미지이다.9 is an image showing the produced nanostructure using ethanol and water as a polar solvent according to Production Example 2 of the present invention.

도 10은 본 발명의 제조예 3에 따라 비정질 나노와이어에서 결정화된 상태를 도시한 이미지이다.10 is an image showing a state of crystallization in an amorphous nanowire according to Production Example 3 of the present invention.

도 11 및 도 12는 본 발명의 제조예 3에 따른 전자 빔 조사 전후의 EDS 맵핑 이미지들이다.11 and 12 are EDS mapping images before and after electron beam irradiation according to Production Example 3 of the present invention.

도 13은 본 발명의 제조예 4에 따라 치환된 원소들에 의해 제조된 나노와이어의 EDS 맵핑 이미지들이다.13 is EDS mapping images of nanowires made by the elements substituted according to Production Example 4 of the present invention.

도 14 내지 도 17은 본 발명의 평가예 1에 따라 제조예 1의 나노와이어의 흡착능을 나타내는 이미지들이다.14 to 17 are images showing the adsorption capability of nanowires of Production Example 1 according to Evaluation Example 1 of the present invention.

도 18은 본 발명의 평가예 1에 따라 다양한 금속이 흡착된 나노와이어를 나타내는 이미지들이다.18 is images showing nanowires adsorbing various metals according to Evaluation Example 1 of the present invention.

도 19는 본 발명의 평가예 2에 따라 비정질 나노와이어의 UV-Vis 흡광 분석 결과를 도시한 그래프이다.19 is a graph showing the results of UV-Vis absorption analysis of amorphous nanowires according to Evaluation Example 2 of the present invention.

본 발명은 다양한 변경을 가할 수 있고 여러 가지 형태를 가질 수 있는 바, 특정 실시예들을 도면에 예시하고 본문에 상세하게 설명하고자 한다. 그러나, 이는 본 발명을 특정한 개시 형태에 대해 한정하려는 것이 아니며, 본 발명의 사상 및 기술 범위에 포함되는 모든 변경, 균등물 내지 대체물을 포함하는 것으로 이해되어야 한다. 각 도면을 설명하면서 유사한 참조부호를 유사한 구성요소에 대해 사용하였다.The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing.

다르게 정의되지 않는 한, 기술적이거나 과학적인 용어를 포함해서 여기서 사용되는 모든 용어들은 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에 의해 일반적으로 이해되는 것과 동일한 의미를 가지고 있다. 일반적으로 사용되는 사전에 정의되어 있는 것과 같은 용어들은 관련 기술의 문맥 상 가지는 의미와 일치하는 의미를 가지는 것으로 해석되어야 하며, 본 출원에서 명백하게 정의하지 않는 한, 이상적이거나 과도하게 형식적인 의미로 해석되지 않는다. Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

이하, 첨부한 도면들을 참조하여, 본 발명의 바람직한 실시예를 보다 상세하게 설명하고자 한다. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

실시예Example

도 1은 본 발명의 바람직한 실시예에 따른 무기 고분자를 설명하기 위한 분자식이다.1 is a molecular formula for describing an inorganic polymer according to a preferred embodiment of the present invention.

도 1을 참조하면, M은 전이 금속으로 산화수가 1이며, X는 할로겐 원소를 의미한다. 또한, CF는 결합용 관능기로 수소 원소를 가지고, 다른 무기 고분자와 수소 결합을 형성할 수 있는 수소 결합용 원소를 가진 화합물이다. n은 반복 단위로 10 내지 500,000이다.Referring to FIG. 1, M is a transition metal, the oxidation number is 1, and X means a halogen element. CF is a compound having a hydrogen bonding element as a functional group for bonding and having a hydrogen bonding element capable of forming a hydrogen bond with another inorganic polymer. n is 10 to 500,000 in terms of repeating units.

전이 금속은 구리(Cu), 망간(Mn), 철(Fe), 카드뮴(Cd), 코발트(Co), 니켈(Ni), 아연(Zn), 수은(Hg), 몰리브덴(Mo), 티타늄(Ti), 마그네슘(Mg), 크롬(Cr) 및 안티모니(Sb)로 이루어진 군으로부터 선택되는 적어도 하나의 원소일 수 있다. The transition metal is selected from the group consisting of copper, manganese, iron, cadmium, cobalt, nickel, zinc, mercury, molybdenum, Ti), magnesium (Mg), chromium (Cr), and antimony (Sb).

또한, 할로겐 원소는 불소(F), 염소(Cl), 브롬(Br), 요오드(I) 또는 이들의 조합을 포함할 수 있다. 할로겐 원소는 전이 금속과 결합되고, 무기 고분자 내에서 주쇄를 형성한다.Further, the halogen element may include fluorine (F), chlorine (Cl), bromine (Br), iodine (I) or a combination thereof. The halogen element is bonded to the transition metal and forms a main chain in the inorganic polymer.

특히, 결합용 관능기는 수소 원소 및 다른 무기 고분자와 수소 결합을 형성할 수 있는 원소를 가진 화합물로 구성된다. 이를 위해 결합용 관능기는 화학적 결합의 말단에 수소 원소를 가져야 한다. 이 수소 원소는 수소 원자 보다 전기 음성도 (electronegativity)가 큰 질소 (N), 산소 (O), 혹은 플루오린 (F) 등의 원소에 결합되어 있어 수소 결합의 능력이 있어야 한다. 또한 결합용 관능기에는 수소 결합을 형성하는 다른 원소를 가지게 되는데 가능한 원소로는 15족 원소 또는 16족 원소가 대표적이다. 이들은 비공유 전자쌍을 가지고, 전이 금속과 화학적으로 결합된다. 결합용 관능기에 채용가능한 15족 원소 또는 16족 원소로는 산소(O), 황(S), 질소(N), 셀레늄(Se) 및 텔루륨(Te)으로 이루어진 군으로부터 선택되는 적어도 하나의 원소임이 바람직하다. 전기 음성도가 큰 원소에 붙어있는 수소 원자는 인접한 다른 무기 고분자의 15족 원소 또는 16족 원소들의 비공유 전자쌍과 수소 결합을 할 수 있다. 이 과정으로 비정질 나노구조체가 형성된다. 상기 결합용 관능기는 티오우레아(thiourea), 우레아(urea), 셀렌우레아(selenourea), 텔루르우레아(tellurourea) 또는 티올 화합물(thiol compound)임이 바람직하다.In particular, the functional group for bonding is composed of a compound having an element capable of forming a hydrogen bond with a hydrogen element and other inorganic polymer. For this purpose, the functional group for bonding must have a hydrogen element at the end of the chemical bond. This hydrogen element is bound to an element such as nitrogen (N), oxygen (O), or fluorine (F), which has a higher electronegativity than a hydrogen atom. In addition, the functional group for bonding has another element which forms a hydrogen bond. Possible elements are a group 15 element or a group 16 element. They have a non-covalent electron pair and are chemically bonded to the transition metal. The group 15 element or the group 16 element which can be used for the functional group for bonding includes at least one element selected from the group consisting of oxygen (O), sulfur (S), nitrogen (N), selenium (Se) and tellurium . A hydrogen atom attached to an element having a high electronegativity can hydrogen bond with a non-covalent electron pair of a group 15 element or a group 16 element of another adjacent inorganic polymer. This process forms an amorphous nanostructure. The functional group for bonding is preferably thiourea, urea, selenourea, tellurourea or a thiol compound.

무기 고분자에서 전이 금속과 할로겐 원소는 주쇄를 형성하고, 전이 금속과 결합되는 결합용 관능기는 측쇄를 형성한다. 특히, 전이 금속은 +1의 산화수를 가진다.In the inorganic polymer, the transition metal and the halogen element form a main chain, and the functional group for bonding which is bonded to the transition metal forms a side chain. In particular, the transition metal has an oxidation number of +1.

도 2는 본 발명의 바람직한 실시예에 따라 상기 도 1의 무기 고분자를 도시한 모식도이다.2 is a schematic view showing the inorganic polymer of FIG. 1 according to a preferred embodiment of the present invention.

도 2를 참조하면, 특정의 무기 고분자는 인접한 무기 고분자와 수소 결합을 형성하고, 수소 결합에 따라 나노와이어를 형성한다. 수소 결합은 결합용 관능기에 존재하는 수소 원소에 의해 이루어지는데, 이 수소원소는 전기 음성도가 수소보다 큰 원소에 결합되어 있다. 즉, 수소 원소는 양전하를 띠게 되며 다른 무기 고분자의 비공유 전자쌍과 결합하게 된다. 구체적으로, 수소 결합은 한 무기 고분자 결합용 관능기의 수소 원소와 다른 무기 고분자의 할로겐 원소 사이에서 이루어지거나, 결합용 관능기의 수소 원소와 다른 무기 고분자의 15족 원소 또는 16족 원소 사이에서 이루어질 수 있다. 이를 통해 무기 고분자는 인접한 무기 고분자와 결합되고, 비정질 나노와이어를 형성한다.Referring to FIG. 2, a specific inorganic polymer forms a hydrogen bond with an adjacent inorganic polymer and forms a nanowire according to a hydrogen bond. The hydrogen bond is formed by a hydrogen element present in the functional group for bonding, which is bonded to an element whose electronegativity is larger than hydrogen. That is, the hydrogen element becomes a positive charge and bonds with the non-covalent electron pair of the other inorganic polymer. Specifically, the hydrogen bond may be formed between a hydrogen element of a functional group for binding an inorganic polymer and a halogen element of another inorganic polymer, or may be formed between a hydrogen element of a functional group for bonding and a Group 15 element or a Group 16 element of another inorganic polymer . Through this, the inorganic polymer binds to the adjacent inorganic polymer and forms an amorphous nanowire.

더욱 상세히 설명하면, 상기 도 1에서 전이 금속으로 Cu를 사용하고, 할로겐 원소로는 Cl을 채용하며, 결합용 관능기는 티오우레아를 사용한다. 따라서, 무기 고분자의 주쇄는 CuCl이며, Cu를 중심금속으로 하여 티오우레아가 결합된다. 티오우레아의 황(S)은 중심금속 Cu와 결합을 형성한다.More specifically, in FIG. 1, Cu is used as a transition metal, Cl is used as a halogen element, and thiourea is used as a functional group for bonding. Therefore, the main chain of the inorganic polymer is CuCl, and thiourea is bound with Cu as a central metal. The sulfur (S) of thiourea forms bonds with the central metal Cu.

상기 도 2에서 비정질 나노구조체의 형성을 위한 2 종류의 수소 결합이 형성된다. 도 2에서 수소 원소는 그 보다 전기 음성도가 큰 질소 원소와 결합되어 있어 수소 결합을 할 수 있는 능력을 가지고 있다. 첫째는 측쇄를 형성하는 티오우레아의 수소 원자가 주쇄의 할로겐 원소인 Cl과 수소 결합하는 경우이다. 둘째는 티오우레아의 수소 원자가 측쇄의 황과 수소 결합하는 경우이다. 어느 경우이든 수소 결합에 의해 무기 고분자들은 소정의 체적을 가지고 응집 또는 일정한 형태를 형성한다. 또한, 수소 결합에 의해 형성되는 비정질 나노구조체는 와이어의 형태를 가지며, 수소-할로겐 원소 간의 결합 및 수소-16족 원소/수소-15족 원소 간의 결합이 혼재된 형태를 가질 수 있다.2, two kinds of hydrogen bonds for forming an amorphous nanostructure are formed. In FIG. 2, the hydrogen element has a capability of hydrogen bonding because it is bonded to a nitrogen element having a higher electronegativity. The first is the case where the hydrogen atom of the thiourea forming the side chain is hydrogen-bonded to the halogen element Cl of the main chain. Secondly, the hydrogen atom of thiourea is hydrogen bonded to the sulfur of the side chain. In either case, the inorganic polymers are aggregated or form a certain volume with a predetermined volume by hydrogen bonding. In addition, the amorphous nanostructure formed by hydrogen bonding has a form of a wire, and may have a form in which a hydrogen-halogen element bond and a hydrogen-16 group element / hydrogen-15 group element bond are mixed.

도 3은 본 발명의 바람직한 실시예에 따른 비정질 나노구조체를 제조하는 방법을 설명하기 위한 흐름도이다.3 is a flowchart illustrating a method of fabricating an amorphous nanostructure according to a preferred embodiment of the present invention.

먼저, 금속 전구체, 결합용 관능기 및 극성 용매가 준비된다(S100).First, a metal precursor, a functional group for bonding, and a polar solvent are prepared (S100).

금속 전구체는 전이 금속을 포함하며, 상기 전이 금속은 여러 산화수를 가질 수 있어야 한다. 사용되는 전이 금속으로는 구리(Cu), 망간(Mn), 철(Fe), 카드뮴(Cd), 코발트(Co), 니켈(Ni), 아연(Zn), 수은(Hg), 몰리브덴(Mo), 티타늄(Ti), 마그네슘(Mg), 크롬(Cr) 및 안티모니(Sb)로 이루어진 군으로부터 선택되는 적어도 하나의 원소를 포함한다.The metal precursor comprises a transition metal, and the transition metal should be capable of having multiple oxidation states. The transition metals used are copper, manganese, iron, cadmium, cobalt, nickel, zinc, mercury, molybdenum, , At least one element selected from the group consisting of titanium (Ti), magnesium (Mg), chromium (Cr) and antimony (Sb).

또한, 상기 금속 전구체는 언급된 금속 원소와 할로겐 원소를 포함하는 것으로 극성 용매에 용해되는 특성을 가진다. 예컨대, 상기 금속 전구체는 언급된 전이 금속을 포함하되 할로겐 원소를 가지는 염화물, 질산염, 황산염, 아세트산염, 아세틸아세토네이트, 포름산염, 수산화물, 산화물 및 이들의 수화물로 이루어진 군으로부터 선택되는 적어도 하나를 포함한다.In addition, the metal precursor includes the metal element and the halogen element mentioned, and has a property of dissolving in a polar solvent. For example, the metal precursor may include at least one selected from the group consisting of chloride, nitrate, sulfate, acetate, acetylacetonate, formate, hydroxide, oxide and hydrates thereof containing the transition metal, do.

결합용 관능기는 수소 결합 능력이 있는 수소 원소와 상기 수소 원소와 수소 결합을 형성할 수 있는 원소를 가질 필요가 있다. 이에 적합한 결합용 관능기는 티오우레아, 우레아, 셀렌우레아, 텔루르우레아 또는 티올 화합물임이 바람직하다. 다만, 결합용 관능기는 15족 원소 또는 16족 원소가 가장 바람직 하지만 비공유 전자쌍을 가질 수 있는 환경의 모든 원소를 포함할 수 있다. 즉, 언급된 화합물 이외에 당업자 수준에서 필요에 따라 다양한 선택이 가능하다 할 것이다.The functional group for bonding needs to have a hydrogen element capable of hydrogen bonding and an element capable of forming a hydrogen bond with the hydrogen element. Suitable functional groups for bonding are preferably thiourea, urea, selenium urea, tellurium urea or a thiol compound. However, the functional group for bonding is most preferably a group 15 element or a group 16 element, but may include all elements of an environment capable of having a non-covalent electron pair. That is, a wide variety of choices may be possible as required by those skilled in the art besides the compounds mentioned.

또한, 준비되는 극성 용매는 금속 전구체 및 결합용 관능기를 용해 또는 분산시키기 위한 것이다. 사용될 수 있는 극성 용매로는 알코올계, 글라이콜계, 폴리글라이콜계 또는 물이 있다. 알코올계는 메탄올, 에탄올, 프로판올 또는 부탄올 등이 있다. 또한, 폴리글아이콜계로는 에틸렌 글라이콜, 디에틸렌 글라이콜 또는 트리에틸렌 글라이콜 등이 있다.The polar solvent to be prepared is for dissolving or dispersing the metal precursor and the functional group for bonding. Polar solvents that can be used include alcoholic, glycolic, polyglycolic, or water. Alcohols include methanol, ethanol, propanol or butanol. Examples of the polyglycol system include ethylene glycol, diethylene glycol, triethylene glycol, and the like.

또한, 극성 용매에 pH 조절제가 추가될 수 있다. 이를 통해 용해된 금속 전구체, 결합용 관능기 및 극성 용매로 구성된 합성 용액의 극성을 조절한다. 합성 용액의 극성의 변화에 따라 제조되는 나노구조체의 직경 또는 길이 등이 변경되어 다양한 형태의 나노구조체를 얻을 수 있다. 상기 pH 조절제로는 산 또는 염기를 가지며, 염산, 플루오르화 수소산, 폼산, 아세트산, 사이안화수소산, 황산, 질산, 탄산, 아미노산, 구연산, 아스코르브산, 수산화칼륨, 수산화리튬, 수산화나트륨, 수산화바륨, 수산화스트론튬, 수산화구리, 수산화베릴륨, 메톡시화 이온, 암모니아, 아마이드화 이온, 메틸 음이온, 사이안화 이온, 아세트산 음이온 또는 폼산 음이온이 사용될 수 있다.In addition, a pH adjuster may be added to the polar solvent. This controls the polarity of the synthesis solution consisting of the dissolved metal precursor, the functional group for bonding and the polar solvent. The diameter or length of the nanostructure produced according to the change of the polarity of the synthesis solution may be changed to obtain various types of nanostructures. Examples of the pH regulator include acids or bases and include acids and bases such as hydrochloric acid, hydrofluoric acid, formic acid, acetic acid, hydrogensic acid, sulfuric acid, nitric acid, carbonic acid, amino acid, citric acid, ascorbic acid, potassium hydroxide, lithium hydroxide, Strontium hydroxide, copper hydroxide, beryllium hydroxide, methoxylated ion, ammonia, amidated ion, methyl anion, cyanide ion, acetic acid anion or formic acid anion may be used.

상술한 과정을 통해 금속 전구체, 결합용 관능기 포함 화합물 및 극성 용매를 포함하는 합성 용액이 형성된다. 또한, 언급된 바대로 pH 조절제가 합성 용액에 추가될 수 있다.Through the above-described process, a synthesis solution containing a metal precursor, a functional group-containing compound for bonding and a polar solvent is formed. Also, as mentioned, a pH adjusting agent may be added to the synthesis solution.

이어서, 합성 용액을 이용한 비정질 나노구조체를 제조하는 공정이 개시된다(S200).Next, a process for producing an amorphous nanostructure using a synthesis solution is disclosed (S200).

예컨대, 합성 용액의 혼합(mixing), 교반(stirring), 초음파 분쇄(sonicating), 흔들기(shaking), 진동(vibration), 휘저음(agitating) 또는 유입(flowing)을 통해 합성 용액 내에서 비정질 나노구조체가 제조된다.For example, the amorphous nanostructures in the synthesis solution may be prepared by mixing, stirring, sonicating, shaking, vibrating, agitating or flowing the synthesis solution. .

또한, 합성 용액 내에서 반응 온도는 0 ℃ 내지 극성 용매의 끓는점으로 설정될 수 있으며, 바람직하게는 5 ℃ 내지 50 ℃의 범위이며, 더욱 바람직하게는 10 ℃ 내지 40 ℃의 범위를 가질 수 있다. 상기 온도 범위는 상온에 속하므로 당업자는 온도의 제한 없이 반응을 유도할 수 있다.Also, the reaction temperature in the synthesis solution may be set from 0 ° C to the boiling point of the polar solvent, preferably from 5 ° C to 50 ° C, and more preferably from 10 ° C to 40 ° C. Since the temperature range is at room temperature, a person skilled in the art can induce the reaction without limit of temperature.

본 반응에서 금속 전구체의 산화수는 감소하여 +1의 값을 가지며, 중심금속과 할로겐 원소의 주쇄가 형성된다. 즉, 반응 이전의 상태에서 금속 전구체를 구성하는 전이 금속은 1가 이상의 다양한 산화수를 가질 수 있으나, 반응을 통해 금속 전구체를 구성하는 전이 금속은 +1의 산화수를 가지고, 무기 고분자에서 중심 금속으로 작용한다. 또한, 금속 전구체에 포함된 할로겐 원소는 전이 금속 또는 중심 금속에 결합되어 무기 고분자의 주쇄를 형성한다. 주쇄의 형성 과정에서 중심 금속과 결합하지 않는 일부 할로겐 원소는 이탈되어 합성 용액 내에 이온 상태로 부유할 수 있다.In the present reaction, the oxidation number of the metal precursor decreases to have a value of +1, and the main chain of the center metal and the halogen element is formed. That is, the transition metal constituting the metal precursor in the state before the reaction may have various oxidation numbers of 1 or more, but the transition metal constituting the metal precursor through the reaction has an oxidation number of +1 and acts as a center metal in the inorganic polymer do. Further, the halogen element contained in the metal precursor is bonded to the transition metal or the center metal to form the main chain of the inorganic polymer. During the formation of the main chain, some halogen elements that do not bind to the center metal may be released and suspended in the ionic state in the synthesis solution.

또한, 결합용 관능기는 중심 금속과 화학적 결합을 형성한다. 결합과정에서 결합용 관능기는 비공유 전자쌍을 중심 금속에 공여한다. 특히, 결합용 관능기는 수소 원소 이외에 15족 원소 또는 16족 원소를 가지며, 이들 원소는 비공유 전자쌍을 중심 금속에 공여하여 결합되며, 수소 원소는 합성된 다른 무기 고분자와 수소 결합을 형성한다.The functional group for bonding also forms a chemical bond with the center metal. In the bonding process, the bonding functional group donates a non-covalent electron pair to the center metal. Particularly, the functional group for bonding has a group 15 element or a group 16 element in addition to a hydrogen element. These elements are bonded by donating a pair of non-covalent electrons to a central metal, and the hydrogen element forms a hydrogen bond with other synthesized inorganic polymer.

이를 통하여 무기 고분자들이 합성되고, 무기 고분자들 사이는 수소 결합을 형성하여 비정질 나노구조체가 형성된다.In this way, inorganic polymers are synthesized and amorphous nanostructures are formed by forming hydrogen bonds between inorganic polymers.

제조예 1 : 비정질 나노와이어의 합성Production Example 1: Synthesis of amorphous nanowire

50 mg의 CuCl2 및 50 mg의 티오우레아 파우더를 비커에 담았다. CuCl2는 금속 전구체로 이용되며, Cu의 산화수는 +2이다. 또한, 티오우레아는 결합용 관능기로 이용된다. 극성 용매로 에탄올을 사용하여 비커에 80 ml을 투입한다. 상기 CuCl2, 티오우레아 및 에탄올이 혼합된 합성용액은 상온에서 초음파 분산된다. 초음파 분산은 1분 내지 2분동안 수행되며, 이를 통해 비정질 나노와이어가 합성된다.Captured the 50 mg of CuCl 2 and 50 mg of thiourea powder in a beaker. CuCl 2 is used as a metal precursor, and the oxidation number of Cu is +2. Further, thiourea is used as a functional group for bonding. Add 80 ml to the beaker using ethanol as a polar solvent. The synthesis solution in which CuCl 2 , thiourea and ethanol are mixed is ultrasonically dispersed at room temperature. Ultrasonic dispersion is performed for 1 minute to 2 minutes, through which amorphous nanowires are synthesized.

도 4는 본 발명의 제조예 1에 따른 비정질 나노와이어의 XPS 분석 그래프들이다.4 is XPS analysis graphs of amorphous nanowires according to Production Example 1 of the present invention.

도 4를 참조하면, 제조예 1에 따라 에탄올을 극성 용매로 이용하여 형성된 나노와이어는 Cu, S, N 및 Cl로 구성됨을 알 수 있다. 또한, 수소 원자는 XPS 상으로 확인될 수 없으므로 이에 대한 설명은 생략된다. 먼저, 도 4의 (a)의 그래프에서 Cu의 p 오비탈의 결합 에너지(binding energy)가 개시되며, Cu 2p1/2와 Cu 2p3/2 사이에 뚜렷한 peak이 존재하지 않으므로 Cu의 산화수가 +1임을 알 수 있다. 즉, Cu는 주변의 할로겐 원소인 Cl과 단일 결합으로 주쇄를 형성한다. 그래프 (b)는 황(S)의 검출 피크로 티오우레아가 Cu에 결합된 상태를 나타낸다. 그래프 (c)는 질소의 존재를 나타내는 것으로 티오우레아의 질소 원자가 이탈 없이 무기 고분자 내에 결합된 상태로 질소와 결합된 수소들의 상태를 확인할 수 있다. 또한, 그래프 (d)는 할로겐 원소 Cl의 존재를 확인하고 있으며, 그래프 (e)는 Cu와 티오우레아가 직접 결합된 상태를 나타낸다.Referring to FIG. 4, it can be seen that nanowires formed using ethanol as a polar solvent according to Production Example 1 are composed of Cu, S, N and Cl. Further, the hydrogen atom can not be identified as the XPS phase, so a description thereof is omitted. First, the binding energy of p orbital of Cu is started in the graph of FIG. 4 (a), and since there is no distinct peak between Cu 2p 1/2 and Cu 2p 3/2 , the oxidation number of Cu is + 1. That is, Cu forms a main chain by a single bond with Cl, which is a halogen element in the periphery. Graph (b) shows the state in which thiourea is bound to Cu with the detection peak of sulfur (S). The graph (c) shows the presence of nitrogen, which can confirm the state of the hydrogen bonded with nitrogen in the state that the nitrogen atom of thiourea is bonded to the inorganic polymer without releasing. Graph (d) shows the presence of the halogen element Cl, and graph (e) shows the state where Cu and thiourea are directly bonded.

이를 통해 상기 도 1의 무기 고분자의 분자식을 확인할 수 있으며, 수소 결합에 의한 비정질 나노와이어의 형성을 확인할 수 있다.As a result, the molecular formula of the inorganic polymer of FIG. 1 can be confirmed, and formation of amorphous nanowires by hydrogen bonding can be confirmed.

특히, Cu 와 Cl 이 화학적 결합을 형성하고, Cu와 티오우레아 사이에 결합이 있음을 알 수 있다. 또한, Cu의 산화수는 주로 +1이며, Cu+1의 원자가로 존재함을 알 수 있다. 즉, CuCl2에서 Cu의 산화수는 +2이나, 비정질 나노구조체로 합성되는 경우, Cu의 산화수는 감소하여 +1의 값을 가지고, 무기 고분자의 주쇄에서 Cu-Cl 결합을 형성함을 알 수 있다.In particular, it can be seen that Cu and Cl form a chemical bond and a bond exists between Cu and thiourea. In addition, the oxidation number of Cu is mainly +1, and it can be seen that there exists a valence of Cu +1 . That is, the oxidation number of Cu in CuCl 2 is +2, but when it is synthesized with an amorphous nanostructure, the oxidation number of Cu decreases and has a value of +1, which indicates that Cu-Cl bonds are formed in the main chain of the inorganic polymer .

도 5는 본 발명의 제조예 1에 따라 제조된 비정질 나노와이어에 대한 DSC 및 TGA 결과를 도시한 그래프이다.5 is a graph showing DSC and TGA results for the amorphous nanowires produced according to Production Example 1 of the present invention.

도 5를 참조하면, DSC(Differential Scanning Calorimetry) 분석은 측정대상인 샘플과 기준 물질의 온도를 변화시키면서 에너지 입력차를 온도의 함수로 표시한 것이다. 도 5에서는 200℃ 부근에서 발열 반응이 관찰된다. 이는 200℃ 부근에서 비정질 나노와이어가 결정화를 개시하는 것을 나타낸다. 또한, 나노와이어는 250℃ 부근에서 강한 흡열 반응이 나타난다. 이는 합성된 비정질 나노와이어에서 흡열 반응에 따른 분해가 발생함을 나타낸다. 즉, 비정질 나노와이어에서 일부의 티오우레아가 주쇄로부터 분리되었음을 나타낸다.Referring to FIG. 5, DSC (Differential Scanning Calorimetry) analysis is a function of the temperature difference between the energy of the sample and the reference material. 5, an exothermic reaction is observed in the vicinity of 200 ° C. This indicates that the amorphous nanowire starts crystallization at around 200 ° C. In addition, the nanowire exhibits a strong endothermic reaction at around 250 ° C. This indicates that decomposition occurs according to the endothermic reaction in the synthesized amorphous nanowires. That is, some thiourea in the amorphous nanowire is separated from the main chain.

또한, 도 5를 참조하면, TGA(Thermogravimetry) 분석이 수행되는 바, 이는 측정대상인 샘플의 온도를 변화시키면서 그 샘플의 질량 변화를 온도의 함수로 측정한 것이다. 상기 도 5에서 250℃의 온도에서 중량(Weight)이 급격하게 감소되는 현상이 나타난다. 이는 비정질 나노와이어가 흡열 동작을 통해 티오우레아가 분리되는 것으로 해석된다. 250℃를 상회하는 온도에서 시료의 중량은 서서히 감소하며, 표면에 약하게 붙어있는 원소들이 서서히 분리되는 것으로 파악된다. 즉, 제조예 1의 비정질 나노와이어는 200℃에서 결정화 과정을 가지며, 250℃ 정도의 온도에서 흡열 반응에 의해 무기 고분자의 측쇄를 구성하는 티오우레아가 분리되어 중량이 급격히 감소하는 과정을 가진다. 그 외 온도의 범위에서 조성의 변경이 심화되는 의미있는 변화가 나타나지 않는다.Also, referring to FIG. 5, a TGA (Thermogravimetry) analysis is performed, which is a measurement of the mass change of the sample as a function of temperature while changing the temperature of the sample to be measured. In FIG. 5, the weight is rapidly reduced at a temperature of 250 ° C. It is interpreted that the amorphous nanowire separates thiourea through endothermic action. At a temperature exceeding 250 ° C, the weight of the sample decreases gradually, and it is understood that the elements that are attached to the surface are slowly separated. That is, the amorphous nanowire of Production Example 1 has a crystallization process at 200 ° C, and the thiourea constituting the side chain of the inorganic polymer is separated by the endothermic reaction at a temperature of about 250 ° C, and the weight is rapidly reduced. There is no meaningful change in the change of the composition in the range of other temperatures.

도 6은 본 발명의 제조예 1의 비정질 나노와이어에 대해 열처리를 수행하고 열처리 온도에 따른 XRD 분석 결과를 도시한 그래프들이다.6 is a graph showing the results of XRD analysis of the amorphous nanowires according to Production Example 1 of the present invention after heat treatment and annealing temperature.

도 6을 참조하면, 본 제조예의 비정질 나노와이어는 원심 분리기에 의해 수거되고, 150℃, 200℃, 300℃, 400℃ 및 500℃ 각각의 온도에서 열처리되고, 열처리 이후의 나노와이어의 분석 결과가 도시된다. 200 ℃ 보다 낮은 온도에서는 결정화 물질에 해당하는 뚜렷한 피크를 가지지 못한다. 200℃ 이상에서 결정화에 관련되 뚜렷한 피크가 나타나기 시작하는데 이는 도 5의 DSC 결과에서의 200℃ 부근의 결정화 과정과 연결된다. 이때부터 CuS2 및 Cu2S에 대응하는 피크가 나타나기 시작한다. 이는 결정화의 진행과 함께 일부 무기 고분자 구조가 국부적으로 각각 CuS2 및 Cu2S로 결정화 되었음을 나타낸다. 하지만 이 과정에서도 두 결정상에 해당하는 뚜렷한 피크는 나타나지 않는다. 상기 도 5의 250℃ 부근에서 티오우레아가 분해되어 급격한 질량의 변화가 생겼음을 알 수 있었는데, 이는 동시에 황(S)원자의 손실을 의미한다. 즉, 이는 S에 비해 Cu의 원소비가 커짐을 의미한다. 실제로, 300℃에서 열처리가 수행된 경우, 황이 다량인 CuS2의 피크는 사라지고 Cu7.2S4에 해당하는 피크만 나타난다. 또한, 뚜렷한 결정화 피크를 보이는 것으로 보아 Cu와 S간에 안정화된 결합이 생겼음을 나타낸다. 또한, 400℃ 및 500℃의 열처리 과정에서 S에 비해 Cu의 원소비가 미세하게 커짐을 알 수 있다. 상기 도 5에서 250 ℃를 상회하는 온도에서 서서히 중량이 감소되는 것을 알 수 있었는데, 이는 S에 손실에 의한 것으로 보인다. 즉, S가 조금씩 소실되면서 Cu7.2S4에서 Cu의 분율이 큰 Cu2S로 상변화를 하게된다. 즉, 제조예 1의 비정질 나노와이어는 열처리를 통해 결정화되며, 결정화 온도를 달리 함으로써 Cu와 S간의 원소비를 조절할 수 있는 장점이 있다. Referring to FIG. 6, the amorphous nanowires of the present invention are collected by a centrifugal separator and heat-treated at 150 ° C, 200 ° C, 300 ° C, 400 ° C, and 500 ° C, respectively. Respectively. And does not have a distinct peak corresponding to the crystallized material at a temperature lower than 200 ° C. At 200 ° C and above, distinct peaks associated with crystallization begin to appear, which is linked to the crystallization process at around 200 ° C in the DSC results of FIG. From this time, peaks corresponding to CuS 2 and Cu 2 S start to appear. This indicates that some of the inorganic polymer structures were locally crystallized into CuS 2 and Cu 2 S, respectively, with progress of crystallization. In this process, however, there are no distinct peaks corresponding to the two crystal phases. It was found that the thiourea was decomposed at about 250 ° C in FIG. 5 to cause a sudden change in mass, which simultaneously means loss of sulfur (S) atoms. That is, it means that the original consumption of Cu is larger than that of S. In fact, when the heat treatment is performed at 300 ° C, the peak of CuS 2 with a large amount of sulfur disappears and only a peak corresponding to Cu 7.2 S 4 appears. In addition, a stable crystallization bond between Cu and S appears due to the apparent crystallization peak. In addition, it can be seen that the original consumption of Cu is finer than that of S in the heat treatment at 400 ° C and 500 ° C. In FIG. 5, it was found that the weight was gradually decreased at a temperature exceeding 250 ° C, which seems to be due to loss in S. In other words, S is slightly lost and the phase change is made to Cu 2 S with a large fraction of Cu in Cu 7.2 S 4 . That is, the amorphous nanowire of Production Example 1 is crystallized through heat treatment, and the original consumption between Cu and S can be controlled by changing the crystallization temperature.

도 7은 본 발명의 제조예 1에 따른 비정질 나노와이어의 열처리 전후를 도시한 이미지들이다.FIG. 7 shows images before and after the heat treatment of amorphous nanowires according to Production Example 1 of the present invention.

도 7을 참조하면, 열처리 전에는 비정질 나노와이어들이 개시되고 있다. 또한, 200℃에서 열처리가 수행된 이후, 나노와이어의 형상은 사라지고, 판상의 구조체들이 서로 응집된 형태가 개시된다. 즉, 주쇄를 형성하는 Cu-Cl 결합의 일부가 파괴되며, 나노와이어의 형태는 상호 분리되거나, 인접한 나노와이어와 결합하여 판상의 응집된 형태로 나타난다. 다만, 판상의 응집된 형태는 결정성을 나타내는 것으로 판단되나, 이러한 결정성이 완벽한 단결정을 형성하지 않는 것으로 판단된다. 즉, 판상의 형상의 일부 영역 또는 상당한 영역에 결정상들이 나타나며, 이들은 관측 여하에 따라 다결정으로 판단될 수 있거나, 비정질의 벌크(bulk) 내에 일부 결정립들이 형성된 것으로 판단될 수 있다. 이들은 전체가 완벽한 단결정은 아니므로 본 실시예에서는 설명의 편의상 비정질 나노구조체로 명명한다.Referring to FIG. 7, amorphous nanowires are disclosed before heat treatment. Further, after the heat treatment is performed at 200 占 폚, the shape of the nanowire disappears, and the structure in which the plate-shaped structures cohere with each other is disclosed. That is, part of the Cu-Cl bonds forming the main chain are destroyed, and the nanowires are separated from each other or combined with the adjacent nanowires to form a plate-like coagulated form. However, it is considered that the coagulated form of the plate forms crystallinity, but this crystallinity does not form a perfect single crystal. That is, crystalline phases appear in a part or a substantial region of the plate-like shape, and they can be judged as polycrystals depending on the observation, or it can be judged that some crystal grains are formed in the bulk of the amorphous state. Since these are not entirely single crystals, they are referred to as amorphous nanostructures for convenience of explanation in this embodiment.

제조예 2 : 용매의 극성에 따른 나노구조체의 형상 변화 및 조성의 변화Production Example 2: Change in shape and composition of nanostructure according to polarity of solvent

상기 제조예 1에서 극성 용매로 에탄올 대신 에틸렌 글리콜(극성 0.790), 디에틸렌 글리콜(극성 0.713) 및 트리에틸렌 글리콜(극성 0.704) 각각을 사용하여 합성된 나노와이어의 길이 및 직경을 비교 관찰한다.The length and diameter of nanowires synthesized by using ethylene glycol (polarity 0.790), diethylene glycol (polarity 0.713) and triethylene glycol (polarity 0.704) in place of ethanol as the polar solvent in Production Example 1 are compared and observed.

도 8은 본 발명의 제조예 2에 의해 제조된 나노와이어들을 동일 배율로 촬영한 SEM 이미지이다.8 is an SEM image of the nanowires produced in Production Example 2 of the present invention at the same magnification.

도 8을 참조하면, 용매의 극성이 증가하면 합성된 나노와이어의 직경 및 길이가 감소하는 것을 알 수 있다. 이는 극성이 높은 용매가 합성된 무기 고분자들 사이의 수소 결합을 방해하고, 결합용 관능기 등이 합성에 참여하는 것을 방해하는 현상에 기인한다. 즉, 용매의 극성의 조절을 통해 나노구조체의 직경 및 길이를 조절할 수 있음을 알 수 있다.Referring to FIG. 8, it can be seen that as the polarity of the solvent increases, the diameter and length of the synthesized nanowires decrease. This is due to the fact that highly polar solvents interfere with the hydrogen bonding between the inorganic polymers synthesized and prevent the bonding functional groups from participating in the synthesis. That is, it can be seen that the diameter and length of the nanostructure can be controlled by adjusting the polarity of the solvent.

도 9는 본 발명의 제조예 2에 의해 극성 용매로 에탄올과 물을 사용한 경우의 제조된 나노구조체를 도시한 이미지이다.9 is an image showing the produced nanostructure using ethanol and water as a polar solvent according to Production Example 2 of the present invention.

도 9를 참조하면, 실시예 1의 에탄올 대신 물(극성 1.0)을 극성 용매로 사용하여 나노구조체를 합성한다. 또한, 실시예 1에 의해 제조된 나노구조체와 비교된다. 상기 도 9의 좌측 이미지에서 보는 바와 같이 극성 용매로 에탄올이 사용되는 경우, 나노와이어가 합성되는 것을 알 수 있다. 반면, 큰 극성을 가진 물을 극성 용매로 사용한 우측의 이미지를 살피면, 나노와이어 대신 균일한 사이즈를 가지는 구형의 나노입자가 형성된다. 구형의 나노입자는 10 nm 이하의 직경을 가진다. 이는 큰 극성 용매가 고분자 주쇄의 결합 또는 생성을 방해하고, 결합용 관능기가 중심금속에 결합되는 현상을 방해하는 현상에 기인한다. 설명된 이유로 구형의 나노입자가 형성된다.Referring to FIG. 9, a nano structure is synthesized by using water (polarity 1.0) instead of ethanol in Example 1 as a polar solvent. It is also compared with the nanostructures produced by Example 1. As shown in the left image of FIG. 9, when ethanol is used as a polar solvent, nanowires are synthesized. On the other hand, when looking at the image on the right side where water having a large polarity is used as a polar solvent, spherical nanoparticles having a uniform size are formed instead of the nanowire. The spherical nanoparticles have a diameter of 10 nm or less. This is due to the phenomenon that a large polar solvent interferes with the bonding or formation of the polymer main chain and the bonding functional group is bonded to the central metal. For the reasons described, spherical nanoparticles are formed.

하기의 표 1은 상기 도 9에서 제조된 나노와이어 및 구형의 나노입자의 성분을 EDS로 측정한 데이터이며, 측정의 특성상 ±10%의 오차범위를 가진다. 또한, 설명의 편의를 위해 수소 원자는 측정 대상에서 제외된다.Table 1 below shows the data of the nanowires and spherical nanoparticles prepared in FIG. 9 measured by EDS, and has an error range of ± 10% due to the nature of the measurement. For convenience of explanation, the hydrogen atom is excluded from the measurement object.

종류Kinds Cu : S : N : Cl의 atomic 조성비Atomic composition ratio of Cu: S: N: Cl 에탄올에서 합성된 나노와이어The nanowires synthesized in ethanol 1 : 1 : 2 : 11: 1: 2: 1 물에서 합성된 구형 나노입자Spherical nanoparticles synthesized in water 6 : 3 : 1 : 06: 3: 1: 0

표 1을 참조하면, 에탄올을 극성 용매로 사용한 나노구조체는 나노와이어 타입이며, Cu-Cl 이 주쇄를 형성하고, 16족 원소인 S가 중심금속인 Cu에 결합된 것을 알 수 있다. 또한, 티오우레아의 N이 2의 조성비를 가지고 있으므로 티오우레아가 결합용 관능기로 작용함을 알 수 있다.Referring to Table 1, it can be seen that the nanostructure using ethanol as a polar solvent is a nanowire type, Cu-Cl forms a main chain, and S as a group 16 element is bound to Cu, which is a central metal. Further, it can be seen that thiourea acts as a functional group for bonding because N of thiourea has a composition ratio of 2.

물에서 합성된 구형 나노입자의 경우, Cl이 검출되지 않는다. 이는 매우 특이한 현상으로 Cu-Cl 의 주쇄가 형성되지 않음을 의미하며, Cl이 나노와이어 합성을 위한 브릿지 역할을 한다는 것을 알 수 있다. 즉, Cl은 길이방향의 성장을 주도한다는 것을 알 수 있다. 또한, 구형의 나노입자는 전이금속 및 16족 원소가 상호 결합된 형태로 형성됨을 알 수 있다.In the case of spherical nanoparticles synthesized in water, Cl is not detected. This is a very unusual phenomenon, meaning that the main chain of Cu-Cl is not formed, and that Cl acts as a bridge for nanowire synthesis. That is, it can be seen that Cl dominates longitudinal growth. In addition, it can be seen that the spherical nanoparticles are formed in a form in which the transition metal and the group 16 element are bonded to each other.

제조예 3 : 나노와이어의 전자 빔에 의한 결정화Production Example 3: Crystallization by nanowire electron beam

본 제조예에서는 제조예 1에서 형성된 비정질 나노와이어에 대한 국부적인 결정화를 수행한다. 결정화를 위해 전자 빔이 조사되며, 결정화 상태를 확인한다.In this production example, local crystallization of the amorphous nanowire formed in Production Example 1 is performed. An electron beam is irradiated for crystallization, and the crystallization state is confirmed.

도 10은 본 발명의 제조예 3에 따라 비정질 나노와이어에서 결정화된 상태를 도시한 이미지이다.10 is an image showing a state of crystallization in an amorphous nanowire according to Production Example 3 of the present invention.

도 10을 참조하면 비정질 나노와이어로는 상기 제조예 1에 의해 형성된 비정질 나노와이어가 사용된다. 전자 빔이 비정질 나노와이어에 입사되어 에너지가 인가되면, 비정질 상태는 국부적으로 결정질로 개질된다. 상기 도 10의 이미지에서 결정립들의 형태로 그레인 바운더리들이 나타난다. 또한, 결정화된 그레인 바운더리 내는 CuCl로 확인된다. 즉, 결정립은 CuCl의 결합이 주도적이며, 비정질 나노와이어의 형성에 기여하는 티오우레아는 중심금속인 Cu로부터 이탈되는 것을 알 수 있다.Referring to FIG. 10, an amorphous nanowire formed according to Production Example 1 is used as the amorphous nanowire. When an electron beam is incident on an amorphous nanowire and energized, the amorphous state is reformed locally to crystalline. In the image of FIG. 10, grain boundaries appear in the form of crystal grains. Also, the crystallized grain boundary is identified as CuCl. That is, the crystal grains are bound to CuCl, and thiourea, which contributes to the formation of amorphous nanowires, is separated from Cu, which is a center metal.

도 11 및 도 12는 본 발명의 제조예 3에 따른 전자 빔 조사 전후의 EDS 맵핑 이미지들이다.11 and 12 are EDS mapping images before and after electron beam irradiation according to Production Example 3 of the present invention.

도 11을 참조하면, 전자 빔 조사 이전 상태로 제조예 1에 따라 형성된 비정질 나노와이어의 EDS 맵핑 이미지가 개시된다. 도 11을 살펴보면, 전자 빔이 조사되기 이전에 Cu, S, N 및 Cl이 나노와이어 전체적으로 고르게 분포됨을 알 수 있다.Referring to FIG. 11, an EDS mapping image of an amorphous nanowire formed according to Preparation Example 1 in a state before electron beam irradiation is disclosed. Referring to FIG. 11, it can be seen that Cu, S, N and Cl are evenly distributed throughout the nanowire before the electron beam is irradiated.

도 12를 참조하면, 전자 빔 조사 이후의 상태로 나노와이어의 국부적인 영역에서 결정화가 진행됨을 알 수 있다. 특히, Cl은 국부적인 영역인 결정화 영역에 집중적으로 나타난다. 또한, Cu, N 및 S는 나노와이어 내에서 고르게 분포함을 알 수 있다. 이는 전자 빔의 조사에 의해 Cu과 Cl이 우선적으로 결정화 됨을 알 수 있다. 결정화 된 부분이 CuCl인 것으로 Cu의 산화수는 1가를 유지함을 알 수 있다. Referring to FIG. 12, it can be seen that the crystallization progresses in the local region of the nanowire after the electron beam irradiation. In particular, Cl appears intensely in the crystallization region, which is a local region. It can also be seen that Cu, N and S are evenly distributed in the nanowire. It can be seen that Cu and Cl preferentially crystallize by the irradiation of the electron beam. It can be seen that the oxidation number of Cu keeps monovalent because the crystallized part is CuCl.

도 6에서 열에 의해 Cu와 S간의 결정화가 일어나는 것에 대비해 전자 빔에 의해서는 CuCl 형태로의 국부적인 결정화가 일어난다. 에너지의 공급원을 달리 함에 따라 다른 형태로 결정화 할 수 있다는 것은 특이한 현상이며 여러 응용 분야로의 쓰임이 가능할 것으로 사료된다. In Fig. 6, local crystallization takes place in the form of CuCl by the electron beam in case the crystallization occurs between Cu and S by heat. It is a peculiar phenomenon to be able to crystallize in different forms as the source of energy is varied and it can be used for various applications.

제조예 4 : 비정질 나노와이어의 원소 치환Production Example 4: Elemental substitution of amorphous nanowires

본 제조예에서는 제조예 1에서 합성된 비정질 나노와이어에서 무기 고분자의 주쇄를 형성하는 할로겐 원소 Cl을 다른 할로겐 원소 Br로 대체하고, 측쇄를 형성하는 티오우레아를 셀렌우레아로 대체한다.In this production example, the halogen element Cl forming the main chain of the inorganic polymer in the amorphous nanowire synthesized in Production Example 1 is replaced with another halogen element Br, and the thiourea forming the side chain is replaced with selenium urea.

또한, 나노와이어의 제조조건은 제조예 1에서 설명된 바와 동일하다. 즉, CuBr2 및 셀렌우레아가 혼합되고, 극성 용매로 에탄올이 사용된다. 각각의 혼합에 사용된 전구체의 몰농도는 제조예 1과 같다. 예로, 주쇄의 Cl을 Br로 치환시킨 실험에서는 CuBr2 84.6 mg, thiourea 50 mg을 에탄올 80 ml 교반시킴으로써 수행되었다. The production conditions of the nanowires are the same as those described in Production Example 1. [ That is, CuBr 2 and selenium urea are mixed, and ethanol is used as a polar solvent. The molar concentration of the precursor used in each of the mixtures was the same as in Preparation Example 1. For example, in the experiment in which Cl in the main chain was replaced with Br, 84.6 mg of CuBr 2 and 50 mg of thiourea were mixed with 80 ml of ethanol.

도 13은 본 발명의 제조예 4에 따라 치환된 원소들에 의해 제조된 나노와이어의 EDS mapping 이미지들이다.13 shows EDS mapping images of the nanowires produced by the elements substituted according to Production Example 4 of the present invention.

도 13을 참조하면, 할로겐 원소로 Cl 대신 Br이 사용되며, Cu와 함께 나노와이어 내에 고르게 분포되고 있음을 알 수 있다. 또한, 셀렌우레아 내의 원소 Se는 16족 원소로 나노와이어 내에 고르게 분포되고 있음을 알 수 있다. 이를 통해 전이금속과 할로겐 원소가 화학적으로 결합되어 주쇄를 형성하고, 전이금속에 비공유 전자쌍을 공유하는 결합을 통해 16족 원소가 결합되고, 16족 원소와 함께 측쇄를 형성하는 수소에 의해 수소 결합을 통한 나노 구조체를 형성할 수 있음을 알 수 있다.Referring to FIG. 13, it can be seen that Br is used instead of Cl as a halogen element and is uniformly distributed in the nanowire together with Cu. It can also be seen that the element Se in the selenium urea is evenly distributed in the nanowire as a group 16 element. The transition metal and the halogen element are chemically bonded to form a main chain. The transition metal is bonded to the transition metal through a bond sharing a non-covalent electron pair, and a group 16 element is bonded to the transition metal. It is possible to form a nanostructure through the nanostructure.

평가예 1 : 나노와이어의 흡착능 평가Evaluation Example 1: Evaluation of adsorption capacity of nanowires

상기 제조예 1에 따라 제조된 나노와이어에 대해 다른 원소 또는 화학 물질에 대한 흡착능이 확인된다. 특히, 이종물질에 대한 흡착능은 금속 이온 또는 유독성의 음이온 분자 등이 용해된 용액을 상기 제조예 1의 비정질 나노와이어와 혼합함을 통해 수행된다.The nanowire produced according to Preparation Example 1 was confirmed to have adsorption ability to other elements or chemicals. Particularly, the adsorption capacity for a heterogeneous material is achieved by mixing a solution in which metal ions or toxic anion molecules are dissolved, with the amorphous nanowires of Production Example 1 above.

도 14 내지 도 17은 본 발명의 평가예 1에 따라 제조예 1의 나노와이어의 흡착능을 나타내는 이미지들이다.14 to 17 are images showing the adsorption capability of nanowires of Production Example 1 according to Evaluation Example 1 of the present invention.

도 14를 참조하면, 제조예 1에서 제조된 나노와이어에 Pt 원자가 5 wt% 로 용해된 용액 내에서 흡착된 EDS 맵핑 이미지가 개시된다. Pt 원자에 대한 나노와이어의 흡착능을 평가하기 위해 PtCl4가 함유된 수용액이 이용되며, 수용액 내에 나노와이어가 혼합된다. 수용액 내의 Pt 원자는 5 wt%로 양이온으로 용해된 상태이다. EDS 맵핑 이미지에서 Pt 원자는 나노와이어에 고르게 흡착된 것을 알 수 있다.Referring to Fig. 14, an adsorption EDS mapping image is shown in a solution in which 5 wt% of Pt atoms is dissolved in the nanowires prepared in Production Example 1. [ An aqueous solution containing PtCl 4 is used to evaluate the ability of the nanowire to adsorb to the Pt atom, and nanowires are mixed in the aqueous solution. The Pt atoms in the aqueous solution are dissolved in the cation at 5 wt%. In the EDS mapping image, it can be seen that the Pt atoms are evenly adsorbed on the nanowires.

도 15를 참조하면, 제조예 1에서 제조된 나노와이어에 Pt 원자가 10 wt% 로 용해된 용액 내에서 제조예 1의 나노와이어에 흡착된 EDS 맵핑 이미지가 개시된다. EDS 맵핑 이미지에서 Pt 원자는 나노와이어에 고르게 흡착된 것을 확인할 수 있다. Pt 원자가 용해된 용액은 PtCl4가 수용액에 용해된 용액이다.Referring to FIG. 15, an EDS mapping image adsorbed on the nanowire of Production Example 1 is disclosed in a solution in which 10 wt% of Pt atoms is dissolved in the nanowire produced in Production Example 1. FIG. In the EDS mapping image, it can be seen that Pt atoms are evenly adsorbed on the nanowires. The solution in which Pt atoms are dissolved is a solution in which PtCl 4 is dissolved in an aqueous solution.

도 16은 Ag 원소가 각각 2.4 at.% (A), 16.1 at.%, 30.1 at.%, 85.6 at.%가 함유된 STEM 이미지 및 EDS 맵핑 이미지이다. Ag 전구체의 양이 5 at.% 이하일 때는 (A)와 같이 원자 수준으로 원소가 도핑되며, Ag 전구체 양이 증가 됨에 따라 (B)같이 섬 모양이 나노와이어에 생긴다. Ag 전구체의 양을 더 늘리게 되면 나노와이어의 edge에 수십 나노 미터의 Ag 입자를 포함한 나노와이어 형상을 가지게 되고 (C), 흡수량이 40 at.%를 넘어가게 되면 나노와이어의 원래 형상은 없어지고 (D)같은 형상을 띠게 된다. 16 is a STEM image and an EDS mapping image containing Ag elements at 2.4 at.% (A), 16.1 at.%, 30.1 at.% And 85.6 at.%, Respectively. When the amount of the Ag precursor is less than 5 at.%, The element is doped to the atomic level as shown in (A), and as the amount of the Ag precursor is increased, the island shape is formed in the nanowire like (B). If the amount of the Ag precursor is further increased, the nanowire will have a nanowire shape containing nanoparticles of several tens nanometers at the edge of the nanowire (C). If the absorption amount exceeds 40 at.%, The original shape of the nanowire disappears D).

도 17은 K2CrO4가 용해된 수용액(116mg/l)에 제조예 1의 비정질 나노와이어를 혼합한 결과를 도시한 이미지이다. 도 17에서 크롬산염과 같은 분자 화합물도 나노와이어에 잘 흡착됨을 알 수 있다.17 is an image showing the result of mixing amorphous nanowires of Production Example 1 with an aqueous solution (116 mg / l) in which K 2 CrO 4 was dissolved. 17 that molecular compounds such as chromate are well adsorbed on the nanowires.

도 18은 본 발명의 평가예 1에 따라 다양한 금속이 흡착된 나노와이어를 나타내는 이미지들이다.18 is images showing nanowires adsorbing various metals according to Evaluation Example 1 of the present invention.

도 18을 참조하면, 사용되는 나노와이어는 상기 제조예 1에 따른 비정질 나노와이어이다. 또한, 하기의 표 2에서는 사용된 물질과 사용된 물질에 포함된 흡착 금속 및 용매가 개시된다.Referring to FIG. 18, the nanowire used is the amorphous nanowire according to Preparation Example 1 above. In addition, in Table 2 below, adsorbed metals and solvents included in the materials used and the materials used are disclosed.

흡착금속Adsorption metal 사용된 물질Substances used amount 사용된 용매Used solvent AgAg Silver nitrate (≥99.0%)Silver nitrate (≥99.0%) 4 mg4 mg Ethanol 30 mlEthanol 30 ml AuAu Gold(III) chloride (99%)Gold (III) chloride (99%) 8 mg8 mg Ethanol 30 mlEthanol 30 ml BiBi Bismuth(III) chloride (≥98%)Bismuth (III) chloride (≥98%) 8 mg8 mg Ethanol 30 mlEthanol 30 ml CdCD Cadmium nitrate tetrahydrate (98%)Cadmium nitrate tetrahydrate (98%) 8 mg8 mg Ethanol 30 mlEthanol 30 ml CeCe Cerium chloride heptahydrate (≥98%)Cerium chloride heptahydrate (≥98%) 9 mg9 mg Ethanol 30 mlEthanol 30 ml CsCs Cesium chloride (99.9%)Cesium chloride (99.9%) 4 mg4 mg Ethanol 30 mlEthanol 30 ml FeFe Iron(III) chloride (97%)Iron (III) chloride (97%) 4 mg4 mg Ethanol 30 mlEthanol 30 ml GdGd Gadolinium(III) chloride (99.99%)Gadolinium (III) chloride (99.99%) 7 mg7 mg Ethanol 30 mlEthanol 30 ml IrIr Iridium(III) chloride hydrate (99.9%)Iridium (III) chloride hydrate (99.9%) 9 mg9 mg Ethanol 25 ml + Water 5 mlEthanol 25 ml + Water 5 ml MgMg Magnesium acetate tetrahydrate (≥98%)Magnesium acetate tetrahydrate (≥98%) 5 mg5 mg Ethanol 30 mlEthanol 30 ml NaNa Sodium nitrate (≥99%)Sodium nitrate (≥99%) 2 mg2 mg Ethanol 25 ml + Water 5 mlEthanol 25 ml + Water 5 ml PbPb Lead(II) nitrate (≥99%)Lead (II) nitrate (≥99%) 8 mg8 mg Ethanol 25 ml + Water 5 mlEthanol 25 ml + Water 5 ml PdPd Palladium(II) chloride (99%)Palladium (II) chloride (99%) 4 mg4 mg Ethanol 25 ml + Water 5 mlEthanol 25 ml + Water 5 ml PtPt Chloroplatinic acid solution (8 wt.% in H2O)Chloroplatinic acid solution (8 wt.% In H2O) 0.12 ml0.12 ml Ethanol 30 mlEthanol 30 ml RuRu Ruthenium chloride hydrate (99.98%)Ruthenium chloride hydrate (99.98%) 7 mg7 mg Ethanol 30 mlEthanol 30 ml TeTe Telluric acid (98%)Telluric acid (98%) 6 mg6 mg Ethanol 25 ml + Water 5 mlEthanol 25 ml + Water 5 ml

상기 도 18 및 표 2를 참조하면, 16종의 금속 원소는 원자 수준으로 비정질 나노와이어에 고르게 흡착됨을 알 수 있다. 이를 통해 비정질 나노와이어는 금속 또는 금속 이온을 원자 단위에서 용이하게 흡착할 수 있으며, 금속염의 형태에 대한 흡착능도 가지고 있음을 확인할 수 있다.Referring to FIG. 18 and Table 2, it can be seen that the 16 metal elements are uniformly adsorbed to the amorphous nanowires at the atomic level. As a result, the amorphous nanowire can easily adsorb metal or metal ion at an atomic unit, and has adsorbability to the form of metal salt.

평가예 2 : 합성된 나노와이어의 UV-Vis 흡광도 분석Evaluation Example 2: UV-Vis absorbance analysis of synthesized nanowires

본 평가예에서는 제조예 1에 따른 비정질 나노와이어에 대한 흡광도 분석이 실시된다. In this evaluation example, the absorbance of the amorphous nanowire according to Production Example 1 is analyzed.

도 19는 본 발명의 평가예 2에 따라 비정질 나노와이어의 UV-Vis 흡광 분석 결과를 도시한 그래프이다.19 is a graph showing the results of UV-Vis absorption analysis of amorphous nanowires according to Evaluation Example 2 of the present invention.

도 19를 참조하면, 비정질 나노와이어는 상기 제조예 1에 따른 나노와이어를 사용한다. 입사되는 광의 파장을 변경하면서 흡광도는 평가된다. 입사되는 광이 250 nm 내지 400 nm에서 나노와이어는 입사광을 강하게 흡수한다. 이를 통해 본 발명의 비정질 나노와이어는 특정 대역의 광을 흡수하거나 차단하는 광학 필터로 사용될 수 있음을 알 수 있다.Referring to FIG. 19, the amorphous nanowire uses the nanowire according to Production Example 1 above. The absorbance is evaluated while changing the wavelength of the incident light. At 250 to 400 nm of incident light, the nanowire strongly absorbs incident light. Accordingly, it can be seen that the amorphous nanowire of the present invention can be used as an optical filter that absorbs or blocks light of a specific band.

상술한 본 발명에서는 간단한 제조방법을 통해 비정질 나노와이어 또는 구형의 나노입자를 형성할 수 있다. 형성되는 무기 고분자를 통해 나노구조체는 형성되며, 무기 고분자는 주쇄에 전이금속과 할로겐 원소의 결합구조를 가지고, 측쇄에 수소 결합 능력이 있는 수소 보다 전기 음성도가 큰 원소에 붙어 있는 수소 원소가 있다. 또한, 수소 결합에 사용되는 15족, 16족 원소를 가지고 있다. 측쇄에 포함된 수소는 수소 결합이 가능한 원소 또는 할로겐 원소와 수소 결합을 형성하고, 이를 통해 무기 고분자는 상호 결합되어 비정질 나노와이어로 형성된다. 또한, 형성과정에 도입되는 극성 용매의 극성에 의존하여 무기 고분자는 구형의 나노입자로 형성될 수 있다. 구형의 나노입자로 형성되는 경우, 할로겐 원소는 배제되며, 수소 원소 및 수소 결합용 원소를 가지는 결합용 관능기와 전이금속은 상호 결합된다.In the present invention, amorphous nanowires or spherical nanoparticles can be formed by a simple manufacturing method. A nanostructure is formed through the formed inorganic polymer. The inorganic polymer has a hydrogen element attached to an element having a binding structure of a transition metal and a halogen element in the main chain and an electronegativity higher than hydrogen having a hydrogen bonding ability in the side chain . It also has Group 15 and Group 16 elements used for hydrogen bonding. The hydrogen contained in the side chain forms a hydrogen bond with an element capable of hydrogen bonding or a halogen element through which the inorganic polymer is combined with each other to form an amorphous nanowire. In addition, depending on the polarity of the polar solvent introduced in the formation process, the inorganic polymer may be formed into spherical nanoparticles. When formed of spherical nanoparticles, the halogen element is excluded, and the functional group for binding having the hydrogen element and the hydrogen bonding element and the transition metal are mutually bonded.

형성된 비정질 나노와이어는 금속 이온에 대해 뛰어난 흡착 능력을 나타내며, 에너지의 인가에 따라 다른 상으로 결정화된다. 또한, 비정질 나노와이어는 자외선 영역 등 특정의 파장 대역에서 광을 흡수하는 기능을 가진다. 이를 통해 다양한 기능성 소재로 활용될 수 있다.The amorphous nanowires formed exhibit excellent adsorption ability to metal ions and crystallize into other phases upon application of energy. In addition, the amorphous nanowires have a function of absorbing light in a specific wavelength band such as an ultraviolet region. As a result, it can be utilized as various functional materials.

Claims (20)

하기의 화학식 1의 무기 고분자를 포함하는 비정질 나노구조체.An amorphous nanostructure comprising an inorganic polymer represented by the following formula (1). [화학식 1][Chemical Formula 1]
Figure PCTKR2018011382-appb-I000002
Figure PCTKR2018011382-appb-I000002
상기 화학식 1에서 M은 전이 금속, X는 할로겐 원소를 나타내며, CF는 수소 원소 및 수소 결합용 원소를 포함하는 결합용 관능기를 나타내고, n은 반복횟수로 10 내지 500,000의 값을 가진다.In the above formula (1), M represents a transition metal, X represents a halogen element, CF represents a bonding functional group containing a hydrogen element and a hydrogen bonding element, and n has a value of 10 to 500,000 as the number of repetitions.
제1항에 있어서, 상기 전이 금속은 구리(Cu), 망간(Mn), 철(Fe), 카드뮴(Cd), 코발트(Co), 니켈(Ni), 아연(Zn), 수은(Hg), 몰리브덴(Mo), 티타늄(Ti), 마그네슘(Mg), 크롬(Cr) 및 안티모니(Sb)로 이루어진 군으로부터 선택되는 적어도 하나인 것을 특징으로 하는 비정질 나노구조체.The method of claim 1, wherein the transition metal is selected from the group consisting of copper, manganese, iron, cadmium, cobalt, nickel, zinc, mercury, Wherein the amorphous nanostructure is at least one selected from the group consisting of molybdenum (Mo), titanium (Ti), magnesium (Mg), chromium (Cr) and antimony (Sb). 제1항에 있어서, 상기 할로겐 원소는 불소(F), 염소(Cl), 브롬(Br), 요오드(I) 또는 이들의 조합인 것을 특징으로 하는 비정질 나노구조체.The amorphous nanostructure according to claim 1, wherein the halogen element is fluorine (F), chlorine (Cl), bromine (Br), iodine (I) or a combination thereof. 제1항에 있어서, 상기 결합용 관능기는 상기 수소 원소 및 상기 수소 결합용 원소를 가지고, 상기 수소 결합용 원소는 상기 전이 금속에 비공유 전자쌍을 공여하는 것을 특징으로 하는 비정질 나노구조체.The amorphous nanostructure according to claim 1, wherein the functional group for bonding has the hydrogen element and the hydrogen bonding element, and the hydrogen bonding element donates a non-covalent electron pair to the transition metal. 제4항에 있어서, 상기 수소 결합용 원소는 15족 원소 또는 16족 원소를 가지며, 산소(O), 황(S), 질소(N), 셀레늄(Se) 및 텔루륨(Te)으로 이루어진 군으로부터 선택되는 적어도 하나의 원소인 것을 특징으로 하는 비정질 나노구조체.The hydrogen-bonding element according to claim 4, wherein the element for hydrogen bonding has a group 15 element or a group 16 element and is composed of oxygen (O), sulfur (S), nitrogen (N), selenium (Se), and tellurium Wherein the amorphous nanostructure is at least one element selected from the group consisting of amorphous and amorphous. 제4항에 있어서, 상기 결합용 관능기는 티오우레아(thiourea), 우레아(urea), 셀렌우레아(selenourea), 텔루르우레아(tellurourea) 또는 티올 화합물(thiol compound)을 가지는 것을 특징으로 하는 비정질 나노구조체.The amorphous nanostructure according to claim 4, wherein the functional group for bonding has thiourea, urea, selenourea, tellurourea or a thiol compound. 제1항에 있어서, 상기 결합용 관능기의 수소는 인접한 다른 무기 고분자의 결합용 관능기의 수소 결합용 원소 또는 할로겐 원소와 수소 결합을 형성하는 것을 특징으로 하는 비정질 나노구조체.The amorphous nanostructure according to claim 1, wherein the hydrogen of the functional group for bonding forms a hydrogen bond with a hydrogen bonding element or a halogen element of a bonding functional group of another adjacent inorganic polymer. 금속 전구체, 결합용 관능기 및 극성 용매를 준비하는 단계; 및Preparing a metal precursor, a functional group for bonding, and a polar solvent; And 상기 금속 전구체, 상기 결합용 관능기 및 상기 극성 용매를 혼합한 합성 용액을 통해 하기의 화학식 2의 무기 고분자간의 수소결합에 의해 형성된 비정질 나노구조체를 형성하는 단계를 포함하는 비정질 나노구조체의 제조방법.And forming an amorphous nanostructure formed by hydrogen bonding between the inorganic polymers of the following formula (2) through a synthesis solution in which the metal precursor, the functional group for bonding, and the polar solvent are mixed. [화학식 2](2)
Figure PCTKR2018011382-appb-I000003
Figure PCTKR2018011382-appb-I000003
상기 화학식 2에서 M은 전이 금속, X는 할로겐 원소를 나타내며, CF는 수소 원소 및 수소 결합용 원소를 포함하는 결합용 관능기를 나타내고, n은 반복횟수로 10 내지 500,000의 값을 가진다.In Formula 2, M represents a transition metal, X represents a halogen element, CF represents a functional group for binding including a hydrogen element and a hydrogen bonding element, and n has a value of 10 to 500,000 in terms of repetition number.
제8항에 있어서, 상기 금속 전구체는 전이 금속과 할로겐 원소를 포함하는 것을 특징을 하는 비정질 나노구조체의 제조방법.9. The method of claim 8, wherein the metal precursor comprises a transition metal and a halogen element. 제9항에 있어서, 상기 전이 금속은 구리(Cu), 망간(Mn), 철(Fe), 카드뮴(Cd), 코발트(Co), 니켈(Ni), 아연(Zn), 수은(Hg), 몰리브덴(Mo), 티타늄(Ti), 마그네슘(Mg), 크롬(Cr) 및 안티모니(Sb)로 이루어진 군으로부터 선택되는 적어도 하나의 원소를 포함하는 것을 특징으로 하는 비정질 나노구조체의 제조방법.The method of claim 9, wherein the transition metal is selected from the group consisting of copper (Cu), manganese (Mn), iron (Fe), cadmium (Cd), cobalt (Co), nickel (Ni), zinc (Zn) Wherein at least one element selected from the group consisting of molybdenum (Mo), titanium (Ti), magnesium (Mg), chromium (Cr) and antimony (Sb) is contained. 제10항에 있어서, 상기 금속 전구체는 상기 전이 금속 및 상기 할로겐 원소를 가지고, 염화물, 질산염, 황산염, 아세트산염, 아세틸아세토네이트, 포름산염, 수산화물, 산화물 및 이들의 수화물로 이루어진 군으로 선택되는 적어도 하나를 포함하는 것을 특징으로 하는 비정질 나노구조체의 제조방법.11. The method of claim 10, wherein the metal precursor comprises at least a transition metal selected from the group consisting of chloride, nitrate, sulfate, acetate, acetylacetonate, formate, hydroxide, oxide and hydrates thereof, Wherein the amorphous nanostructure is formed on the surface of the amorphous nanostructure. 제8항에 있어서, 상기 결합용 관능기의 수소 결합용 원소는 산소(O), 황(S), 질소(N), 셀레늄(Se) 및 텔루륨(Te)으로 이루어진 군으로부터 선택되는 적어도 하나의 원소인 것을 특징으로 하는 비정질 나노구조체의 제조방법.The method according to claim 8, wherein the element for hydrogen bonding of the functional group for bonding is at least one element selected from the group consisting of oxygen (O), sulfur (S), nitrogen (N), selenium (Se) Wherein the amorphous nanostructure is an element. 제12항에 있어서, 상기 결합용 관능기는 티오우레아(thiourea), 우레아(urea), 셀렌우레아(selenourea), 텔루르우레아(tellurourea) 또는 티올 화합물(thiol compound)을 가지는 것을 특징으로 하는 비정질 나노구조체의 제조방법.13. The amorphous nanostructure according to claim 12, wherein the functional group for bonding is selected from the group consisting of thiourea, urea, selenourea, tellurourea, or a thiol compound. Gt; 제8항에 있어서, 상기 결합용 관능기의 수소는 인접한 다른 무기 고분자의 결합용 관능기의 수소 결합용 원소 또는 할로겐 원소와 수소 결합을 형성하는 것을 특징으로 하는 비정질 나노구조체의 제조방법.The method according to claim 8, wherein the hydrogen of the functional group for bonding forms a hydrogen bond with a hydrogen bonding element or a halogen element of a bonding functional group of another adjacent inorganic polymer. 제8항에 있어서, 상기 극성 용매는 알코올계, 글라이콜계, 폴리글라이콜계 또는 물을 포함하는 것을 특징으로 하는 비정질 나노구조체의 제조방법.The method for producing an amorphous nanostructure according to claim 8, wherein the polar solvent comprises an alcohol-based solvent, a glycol-based solvent, a polyglycol-based solvent or water. 제15항에 있어서, 상기 극성 용매의 극성이 증가할수록 상기 할로겐 원소와 상기 전이 금속 사이의 결합은 끊어지고, 상기 할로겐 원소가 제거된 구형의 나노입자가 형성되는 것을 특징으로 하는 비정질 나노구조체의 제조방법.The amorphous nanostructure according to claim 15, wherein as the polarity of the polar solvent increases, the bond between the halogen element and the transition metal breaks and the spherical nanoparticles in which the halogen element is removed are formed Way. 제8항에 있어서, 상기 금속 전구체의 전이 금속은 다가의 산화수를 가지고, 상기 무기 고분자의 합성에 의해 산화수가 감소되어 +1의 산화수를 가지는 것을 특징으로 하는 비정질 나노구조체의 제조방법.The method for producing an amorphous nanostructure according to claim 8, wherein the transition metal of the metal precursor has a multivalent oxidation number, and the oxidation number is reduced by synthesis of the inorganic polymer to have an oxidation number of +1. 제8항에 있어서, 상기 비정질 나노구조체를 형성하는 단계 이후에 상기 비정질 나노구조체에 대한 열처리를 통해 상기 무기 고분자의 주쇄의 결합을 파괴하여 판상의 결정상을 형성하는 단계를 더 포함하는 것을 특징으로 하는 비정질 나노구조체의 제조방법.9. The method of claim 8, further comprising the step of forming a plate-like crystal phase by breaking bonds of the main chain of the inorganic polymer through heat treatment of the amorphous nanostructure after the step of forming the amorphous nanostructure A method for producing an amorphous nanostructure. 제8항에 있어서, 상기 비정질 나노구조체를 형성하는 단계 이후에 상기 비정질 나노구조체에 전자 빔을 조사하여 조사된 영역을 결정화하는 단계를 더 포함하는 비정질 나노구조체의 제조방법.The method of claim 8, further comprising the step of irradiating the amorphous nanostructure with an electron beam to crystallize the irradiated region after forming the amorphous nanostructure. 제19항에 있어서, 상기 비정질 나노구조체의 합성은 상기 합성 용액에 대한 상온에서의 혼합(mixing), 교반(stirring), 초음파 분쇄(sonicating), 흔들기(shaking), 진동(vibration), 휘저음(agitating) 또는 유입(flowing)에 의해 수행되는 것을 특징으로 하는 비정질 나노구조체의 제조방법.20. The method of claim 19, wherein the synthesis of the amorphous nanostructure comprises mixing, stirring, sonicating, shaking, vibrating, stirring (stirring), stirring agitating < / RTI > or flowing of the amorphous nanostructure.
PCT/KR2018/011382 2017-09-29 2018-09-27 Amorphous nanostructure composed of inorganic polymer, and preparation method therefor Ceased WO2019066466A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US16/646,144 US11167262B2 (en) 2017-09-29 2018-09-27 Amorphous nanostructure composed of inorganic polymer and method for manufacturing the same
CN201880058437.7A CN111051390B (en) 2017-09-29 2018-09-27 Amorphous nanostructure composed of inorganic macromolecule and preparation method thereof

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR20170128290 2017-09-29
KR10-2017-0128290 2017-09-29
KR10-2017-0136616 2017-10-20
KR20170136616 2017-10-20
KR1020180097250A KR102432093B1 (en) 2017-10-20 2018-08-21 Amorphous Nanostructure made up of Inorganic Polymer and Method of manufacturing the same
KR10-2018-0097250 2018-08-21

Publications (1)

Publication Number Publication Date
WO2019066466A1 true WO2019066466A1 (en) 2019-04-04

Family

ID=65901714

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2018/011382 Ceased WO2019066466A1 (en) 2017-09-29 2018-09-27 Amorphous nanostructure composed of inorganic polymer, and preparation method therefor

Country Status (2)

Country Link
CN (1) CN111051390B (en)
WO (1) WO2019066466A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050101802A (en) * 2004-04-20 2005-10-25 삼성전자주식회사 Method for preparing metal sulfide nanocrystal using thiol compound as sulfur precursor
KR20120053312A (en) * 2010-11-17 2012-05-25 한국에너지기술연구원 Method for preparing cu- and cl-added zns crystalline nano-phosphor materials
US20150194548A1 (en) * 2012-07-26 2015-07-09 Imra Europe Sas Large-grain crystallized metal chalcogenide film, colloidal solution of amorphous particles, and preparation methods

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2010254119A1 (en) * 2009-05-26 2012-01-12 Purdue Research Foundation Thin films for photovoltaic cells
US9647154B2 (en) * 2011-08-02 2017-05-09 Fondazione Istituto Italiano Di Tecnologia Ordered superstructures of octapod-shaped nanocrystals, their process of fabrication and use thereof
CN102583510A (en) * 2012-03-05 2012-07-18 南京航空航天大学 Microwave-synthesis method for preparation of copper-zinc-tin-sulphur (CZTS) nanoparticles
KR101752041B1 (en) * 2012-03-06 2017-06-28 데쿠세리아루즈 가부시키가이샤 Transparent conductive film, conductive element, composition, input device, display device and electronic equipment
CN103526247B (en) * 2013-10-18 2016-02-24 天津大学 The preparation method of a kind of telluro ternary nano line and array thereof
US20160097140A1 (en) * 2014-10-02 2016-04-07 Cornell University Enhanced conductivity metal-chalcogenide films via post elecrophoretic deposition (epd) treatment
CN104370302B (en) * 2014-10-23 2016-05-04 上海交通大学 The nanometer cast synthetic method that a kind of copper-zinc-tin-sulfur is nanocrystalline
CN105036093B (en) * 2015-08-20 2017-04-19 安徽师范大学 Preparation method of cadmium telluride nanowire
CN108276431A (en) * 2018-04-01 2018-07-13 桂林理工大学 A kind of method that ultrasonic wave added prepares Cu-8- oxyquinolines-bromine nano wire
CN110058020A (en) * 2019-05-14 2019-07-26 山东理工大学 A kind of preparation method and application of the electrochemical immunosensor of PdCu nano wire functionalization porous graphene
CN110940266B (en) * 2019-11-12 2020-11-17 武汉大学 Preparation method of flexible sensor with angle recognition function
CN111496266A (en) * 2020-05-09 2020-08-07 哈尔滨工业大学(深圳)(哈尔滨工业大学深圳科技创新研究院) Environment-friendly conductive nano copper ink and preparation method thereof
CN111790178A (en) * 2020-07-17 2020-10-20 安徽冯了性中药材饮片有限公司 Extraction liquid capable of easily recovering heavy metals removed from medicinal materials
CN112038104A (en) * 2020-10-13 2020-12-04 浙江倪阮新材料有限公司 CuS/ZnCo2O4/C counter electrode and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050101802A (en) * 2004-04-20 2005-10-25 삼성전자주식회사 Method for preparing metal sulfide nanocrystal using thiol compound as sulfur precursor
KR20120053312A (en) * 2010-11-17 2012-05-25 한국에너지기술연구원 Method for preparing cu- and cl-added zns crystalline nano-phosphor materials
US20150194548A1 (en) * 2012-07-26 2015-07-09 Imra Europe Sas Large-grain crystallized metal chalcogenide film, colloidal solution of amorphous particles, and preparation methods

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ISAC, L. ET AL.: "Copper Sulfide (CuxS) Thin Films as Possible p-Type Absorbers in 3D Solar Cells", ENERGY PROCEDIA, vol. 2, 2010, pages 71 - 78, XP055585560 *
KUMAR, P. ET AL.: "Synthesis of Cu1.8S and CuS from Copper-Thiourea Containing Precursors; Anionic (Cl-, N03-, S042-) Influence on the Product Stoichiometry", INORG. CHEM., vol. 50, 2011, pages 3065 - 3070 *

Also Published As

Publication number Publication date
CN111051390B (en) 2022-03-22
CN111051390A (en) 2020-04-21

Similar Documents

Publication Publication Date Title
Guo et al. Hollow, porous, and yttrium functionalized ZnO nanospheres with enhanced gas-sensing performances
Leontidis et al. Composite nanotubes formed by self-assembly of PbS nanoparticles
EP3042727A1 (en) Composition containing fine silver particles, production method thereof, method for producing fine silver particles, and paste having fine silver particles
WO2020040380A1 (en) Composite body having nanoparticles uniformly dispersed in nano-sized pores in support, and method for producing same
CN101778799A (en) Spherical assembly particle composition of cuprous oxide and preparation method thereof
Zhou et al. Facile synthesis and shape evolution of highly symmetric 26-facet polyhedral microcrystals of Cu 2 O
KR102432093B1 (en) Amorphous Nanostructure made up of Inorganic Polymer and Method of manufacturing the same
Rahman et al. Fabrication and electrical surface characterization of pellets of V2O5 nanostructures for robust and portable gas sensor applications
CN102549788B (en) Nanocomposite thermoelectric conversion material and method of producing the same
CN102933486B (en) Ribbon-shaped metal nanostructure and preparation method thereof
JP7098758B2 (en) Ultra-small nanostructures manufactured using amorphous nanostructures and their manufacturing methods
WO2020040379A1 (en) Fractal alloy nanostructures produced using amorphous nanostructures and method for producing same
TW201723195A (en) Method for producing precious metal powder
WO2019066466A1 (en) Amorphous nanostructure composed of inorganic polymer, and preparation method therefor
Tang et al. Cost-effective aqueous-phase synthesis of long copper nanowires
US20100278718A1 (en) Method for making monodisperse silver and silver compound nanocrystals
WO2019235713A1 (en) Micro-nanostructure manufactured using amorphous nanostructure and manufacturing method therefor
CN114005564A (en) A flexible polymer-bismuth-based halide nanoparticle composite X-ray protective material and preparation method and application
US11167262B2 (en) Amorphous nanostructure composed of inorganic polymer and method for manufacturing the same
JP4634670B2 (en) Composite modified metal chalcogenide ultrafine particles
KR101916661B1 (en) Manufacturing method of gas sensor capable of driving in room temperature
JP4462483B2 (en) Method for producing fine particle-carrying carbon particles and fine particle-carrying carbon particles produced by the production method
EP2913127B1 (en) Production method for particles of element having standard electrode potential greater than 0v
US20230264176A1 (en) Method for producing catalyst for electrochemical reaction that can be sized into fine particles
JP4238369B2 (en) Ion conductive fine particles, method for producing the same, and electrochemical device using the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18862377

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18862377

Country of ref document: EP

Kind code of ref document: A1