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WO2019045652A3 - Photodetector - Google Patents

Photodetector Download PDF

Info

Publication number
WO2019045652A3
WO2019045652A3 PCT/SG2018/050446 SG2018050446W WO2019045652A3 WO 2019045652 A3 WO2019045652 A3 WO 2019045652A3 SG 2018050446 W SG2018050446 W SG 2018050446W WO 2019045652 A3 WO2019045652 A3 WO 2019045652A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor region
type semiconductor
photodetector
substrate
electrically connected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/SG2018/050446
Other languages
French (fr)
Other versions
WO2019045652A2 (en
Inventor
Dao Hua Zhang
Jinchao TONG
Landobasa Yosef Mario Alexander Lumban TOBING
Shupeng QIU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Nanyang Technological University
Thales Solutions Asia Pte Ltd
Original Assignee
Centre National de la Recherche Scientifique CNRS
Nanyang Technological University
Thales Solutions Asia Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Nanyang Technological University, Thales Solutions Asia Pte Ltd filed Critical Centre National de la Recherche Scientifique CNRS
Publication of WO2019045652A2 publication Critical patent/WO2019045652A2/en
Publication of WO2019045652A3 publication Critical patent/WO2019045652A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices

Landscapes

  • Light Receiving Elements (AREA)

Abstract

L'invention concerne un photodétecteur (10). Le photodétecteur (10) comprend un substrat (12), une région semi-conductrice de type p (14) sur le substrat (12), une région semi-conductrice intrinsèque (16) sur la région semi-conductrice de type p (14), une région semi-conductrice de type n (18) sur la région semi-conductrice intrinsèque (16), une structure plasmonique de surface (20) sur la région semi-conductrice de type n (18), une cathode (22) connectée électriquement à la région semi-conductrice de type n (18), et une anode (24) connectée électriquement à la région semi-conductrice de type p (14).The invention relates to a photodetector (10). The photodetector (10) comprises a substrate (12), a p-type semiconductor region (14) on the substrate (12), an intrinsic semiconductor region (16) on the p-type semiconductor region (14). ), an n-type semiconductor region (18) on the intrinsic semiconductor region (16), a surface plasmon structure (20) on the n-type semiconductor region (18), a cathode (22) electrically connected to the n-type semiconductor region (18), and an anode (24) electrically connected to the p-type semiconductor region (14).

PCT/SG2018/050446 2017-09-04 2018-09-04 Photodetector Ceased WO2019045652A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG10201707146W 2017-09-04
SG10201707146W 2017-09-04

Publications (2)

Publication Number Publication Date
WO2019045652A2 WO2019045652A2 (en) 2019-03-07
WO2019045652A3 true WO2019045652A3 (en) 2019-04-04

Family

ID=63579727

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SG2018/050446 Ceased WO2019045652A2 (en) 2017-09-04 2018-09-04 Photodetector

Country Status (1)

Country Link
WO (1) WO2019045652A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110970512B (en) * 2019-12-04 2024-12-31 暨南大学 A visible light wide-spectrum high-efficiency PIN photodiode and its preparation method
CN111584646B (en) * 2020-05-26 2022-06-21 湖南大学 Near-infrared thermal electron photodetector and preparation method thereof
CN113707748B (en) * 2021-08-27 2023-02-17 中国科学院半导体研究所 Epitaxial wafer and photoelectric detector chip
CN117393633B (en) * 2023-09-26 2025-09-30 华南理工大学 A PIN-type InGaN-based visible light detector and its preparation method and application
CN118465515B (en) * 2024-07-10 2024-10-01 南京大学 A method for detecting electric field inside a semiconductor wafer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8750653B1 (en) * 2010-08-30 2014-06-10 Sandia Corporation Infrared nanoantenna apparatus and method for the manufacture thereof
US20150028216A1 (en) * 2012-03-29 2015-01-29 Asahi Kasei Microdevices Corporation Light Receiving Device
US20160365463A1 (en) * 2015-06-15 2016-12-15 Korea Research Institute Of Standards And Science Ir photodetector using metamaterial-based on an antireflection coating to match the impedance between air and sp resonator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8750653B1 (en) * 2010-08-30 2014-06-10 Sandia Corporation Infrared nanoantenna apparatus and method for the manufacture thereof
US20150028216A1 (en) * 2012-03-29 2015-01-29 Asahi Kasei Microdevices Corporation Light Receiving Device
US20160365463A1 (en) * 2015-06-15 2016-12-15 Korea Research Institute Of Standards And Science Ir photodetector using metamaterial-based on an antireflection coating to match the impedance between air and sp resonator

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
AUGEL L ET AL: "Ge PIN photodetectors with nanohole arrays for refractive index sensing", 2017 IEEE 14TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP), IEEE, 23 August 2017 (2017-08-23), pages 161 - 162, XP033237328, DOI: 10.1109/GROUP4.2017.8082246 *
FISCHER INGA A ET AL: "Plasmonics-integrated Ge PIN-photodetectors: efficiency enhancement by Al nanoantennas and plasmon detection", VISUAL COMMUNICATIONS AND IMAGE PROCESSING; 20-1-2004 - 20-1-2004; SAN JOSE,, vol. 9654, 15 June 2015 (2015-06-15) - 15 June 2015 (2015-06-15), pages 965404 - 965404, XP060056055, ISBN: 978-1-62841-730-2, DOI: 10.1117/12.2192161 *
PETERS DAVID W ET AL: "Application of plasmonic subwavelength structuring to enhance infrared detection", VISUAL COMMUNICATIONS AND IMAGE PROCESSING; 20-1-2004 - 20-1-2004; SAN JOSE,, vol. 8994, 19 February 2014 (2014-02-19), pages 899419 - 899419, XP060036139, ISBN: 978-1-62841-730-2, DOI: 10.1117/12.2040727 *
QIU SHUPENG ET AL: "Surface Plasmon Enhancement on Infrared Photodetection", PROCEDIA ENGINEERING, vol. 140, 1 January 2016 (2016-01-01), pages 152 - 158, XP029456916, ISSN: 1877-7058, DOI: 10.1016/J.PROENG.2015.10.151 *
SHANG Y. ET AL.: "Study on High Speed Photodetectors with plasmonics Filter", SPIE, PO BOX 10 BELLINGHAM WA 98227-0010 USA, 1 January 2009 (2009-01-01), XP040505326 *

Also Published As

Publication number Publication date
WO2019045652A2 (en) 2019-03-07

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