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WO2018224454A1 - Procédé pour le dépôt de delo - Google Patents

Procédé pour le dépôt de delo Download PDF

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Publication number
WO2018224454A1
WO2018224454A1 PCT/EP2018/064676 EP2018064676W WO2018224454A1 WO 2018224454 A1 WO2018224454 A1 WO 2018224454A1 EP 2018064676 W EP2018064676 W EP 2018064676W WO 2018224454 A1 WO2018224454 A1 WO 2018224454A1
Authority
WO
WIPO (PCT)
Prior art keywords
starting material
storage
mass
storage element
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2018/064676
Other languages
German (de)
English (en)
Inventor
Birgit Irmgard Beccard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Priority to KR1020197037993A priority Critical patent/KR102652774B1/ko
Publication of WO2018224454A1 publication Critical patent/WO2018224454A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material using a porous body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Definitions

  • the invention relates to a method for depositing a layer on a substrate, wherein in a preparation step on storage surfaces of a storage element, a first mass of a starting material is deposited and vaporized in a coating step, the starting material from the storage surfaces and a measured mass of the starting material by means of a Carrier gas is transported into a process chamber, where on a substrate, a starting material or a reaction product of the starting material having layer is deposited on the substrate.
  • a generic method is disclosed in WO 2012/175128, WO 2012/175126 and WO 2012/175124 Al.
  • a solid-state foam forms with the walls of its open-cell pores storage areas on which a previously evaporated organic starting material is deposited in a preparatory step.
  • the solid-state foam is heated to an evaporation temperature which is kept constant.
  • a carrier gas stream is passed through, in which the vaporized starting material is fed with a constant rate of evaporation.
  • a temporally constant vapor stream generated by this measure is fed into a process chamber of a deposition reactor, where the substrate is located on a cooled substrate holder.
  • US 7,238,389 describes a device having a powder evaporator, with which a powder is evaporated, which steam is fed into a solid state foam, which is used as a vapor source.
  • DE 10 2011 051 260 A1 describes an aerosol generator for producing an aerosol from a stored organic starting material.
  • the aerosol is fed with a carrier gas into an evaporator which consists of a solid-state foam, to which evaporation energy is supplied from the outside, so that the aerosol particles can evaporate on the surfaces of the solid-state foam.
  • the steam thus generated is fed into a process chamber in which the substrate to be coated is located.
  • the invention has for its object to develop a genus in accordance with the method use advantageous, in particular to provide measures by which the precisely measured mass of the starting material, which is fed into the process chamber, can be adjusted easily.
  • the problem is solved by the invention specified in the claims, wherein the dependent claims are not only advantageous developments of the invention specified in the main claim, but also represent independent solutions to the problem. Individual features of the claims may be combined as desired with individual features of other claims.
  • the genus in contemporary method is further developed in that in the preparation step, a predetermined mass of the starting material is deposited on the storage surfaces. This mass can be exactly the mass that is deposited in the coating step.
  • the total mass of the mass of the starting material deposited on the storage surfaces may be slightly larger than the mass re-evaporated in the coating step, wherein the mass difference is at most 10 percent, preferably at most 1 percent.
  • a certain "overcharge" of the memory has the advantage that consistent energy pulses of substantially constant length or amount of energy can be used for vaporization and the coating step can be very short
  • the steam generation rate drops exponentially at the end of the energization event
  • Steam generation can be stopped if there is only less than 10 percent of the storage mass on the storage surface, and the evaporation process is preferably stopped if there is less than 1 percent of the storage mass on the storage surfaces Nevertheless, vaporization of the starting material is not critical in comparison with the known method because the evaporation rate exponentially decreases at the end of the evaporation step and the released mass is easy to keep within the tolerance range carries on its storage areas small amounts of the starting material, so exactly the measured mass of the starting material can be deposited on the storage areas.
  • a precisely measured quantity of a powder is transported as a quantity of vapor by means of a carrier gas into a process chamber. There, the deposition of a layer on the substrate.
  • the steam quantity is measured by first bringing a steam generator into an operating state in which it generates a constant steam rate.
  • the carrier gas stream then transports a constant mass flow of the starting material into the process chamber.
  • the metering of the quantity takes place over a defined period of time, within which the temporally constant mass flow is fed into the process chamber.
  • a storage element is bladed with a precisely measured quantity of the starting material. This can be done in the same device in which the coating step is also carried out.
  • a carrier gas vapor mixture is fed into the gas-permeable storage element, the condensation surfaces, however, are kept at a low temperature, in particular room temperature.
  • the temperature of the storage element is preferably at least 20 ° C below the condensation temperature of the starting material.
  • the vaporous starting material for loading the storage element can be produced in a variety of ways, for example. It is possible to weigh a quantity of the starting material and to completely vaporize it in a crucible and to condense this vapor on the storage surfaces of the storage element.
  • an aerosol or a particle stream which is evaporated in an evaporator, wherein a stationary vapor flow is generated and the quantity of the substance stored on the storage element is determined by the time of the vapor deposition.
  • the solid or liquid components of the aerosol or of the particle stream can also be deposited directly on the storage surfaces of the storage element.
  • the dimension of the material deposited on the storage surfaces takes place here over the duration of the aerosol loading.
  • the evaporation rate or the aerosol generation rate of the starting material in the evaporator or aerosol generator can certainly vary over time, as long as the time average of the evaporation rate or aerosol generation rate does not drift.
  • the inventive method also allows the preparation step to separate time from the coating step.
  • the memory element is supplied with an energy pulse. This can be done by passing an electric current, ie by feeding electrical energy.
  • the temperature of the storage element continuously increases until a maximum temperature is reached which is above the condensation temperature or vaporization temperature of the starting material but below a temperature at which a chemical or physical conversion of the starting material takes place.
  • the starting material is an organic starting material used in the production of OLEDs.
  • a discretely defined amount of material namely exactly that which is needed for a coating step, is preferably deposited on a cool evaporator.
  • the temperature of the evaporator must only be lower than the evaporation temperature.
  • the coating step may begin by heating the evaporator by an energy pulse, so that the material deposited on the storage surfaces substantially completely, ie evaporated to technologically acceptable residual levels.
  • the coating step may be shorter than the preparation step.
  • the substantially complete evaporation of the material stored on the storage surfaces can amount to a few seconds.
  • the evaporator so the storage element is cooled again and loaded again after reaching a temperature below the evaporation temperature.
  • a substrate change can be carried out within the process chamber.
  • the loading of the storage element is preferably carried out by condensation of a transported as a vapor organic starting material, so that the storage element forms a condensate carrier.
  • Fig. 1 shows a device for loading a memory element
  • Part of a coating can be anläge as shown in the figure 2 is shown schematically, but can also be spatially separated from it,
  • Fig. 3 shows the time course of a steam generation rate of a
  • FIG. 1 shows a device for loading a memory element 1 performing the function of a condensate carrier, which serves as a storage medium for storing a precisely measured quantity of organic matter
  • the storage element 1 also has the function of an evaporator. It consists of an electrically conductive solid-state foam, as described in WO 2012/175128 or in US Pat. No. 7,238,389.
  • the temperature of the storage element 1 is below the condensation temperature of the organic starting material.
  • the storage element 1 can be cooled to remove the heat of condensation. However, it can also have a sufficiently low temperature so that it does not reach the evaporation temperature during condensation of the starting material fed in vapor-form into the apparatus shown in FIG.
  • the device shown in Figure 1 has a supply line 7 through which a previously generated vapor V of the organic starting material is transported by a carrier gas C. In a region of an enlarged cross-section of the feed line 7 is the memory element formed by an electrically conductive solid body 1. Its open-cell walls form memory areas on which the vapor V condenses.
  • the fed into the supply line 7 steam can be generated with a device as disclosed in the cited prior art.
  • an aerosol generator can be provided with which an aerosol flow is generated, which is evaporated in a further upstream evaporator.
  • the loading of the storage element 1 can also be done by sprinkling a powder or the solidification of a liquid.
  • Such a loaded with a precisely measured quantity of an organic starting material storage element 1 can be stored for later use. However, it is provided in particular that the loading of the storage element 1 with the organic material takes place within the same device with which the steam is also generated, which is fed to a separation of a layer in a process chamber 2. Such a device is shown in FIG 2.
  • a carrier gas stream is fed through the feed channel 6 without the presence of a vapor.
  • the carrier gas flow C flows through the storage element 1, which is heated by supplying heating energy H. In this case, the temperature of the storage element 1 changes continuously to a temperature which is above the evaporation temperature of the organic starting material.
  • the feeding of the heating power H can be done by passing an electric current through the electrically conductive storage element 1.
  • the evaporation rate in the storage element 1 increases until after reaching a certain temperature, the evaporation rate reaches a maximum (see Figure 4).
  • the evaporation rate With increasing depletion of the stockpiled in the storage element material 1, the evaporation rate then drops to almost zero, when stored in the storage element 1 mass of the organic starting material is almost completely evaporated and the occupancy rate with condensate on the storage areas under 50 and less than 20 percent , The rate of evaporation then decreases substantially exponentially with time.
  • the energy supply is interrupted if the evaporation rate, for example, corresponds to only one hundredth of the maximum evaporation rate.
  • the coating step can thus, in the case of a constantly changing material flow, flow through a flow channel 6
  • the flow channel 6 connects the storage element 1 with a gas inlet member 3, which is arranged within a process chamber 2 and which is maintained at a temperature which is above the condensation temperature of the vapor, so that the steam in the storage element. 1 is generated and transported through the flow channel 6, completely passes through the gas inlet member 3.
  • the gas inlet member 3 has a plurality of sieve-like arranged nozzles on a gas outlet surface facing a substrate holder 4.
  • Figure 4 shows the vapor source according to the Invention, namely the storage element 1 generated steam generation rate
  • Figure 3 shows the steam generation rate of a steam source according to the prior art. After a stabilization time, during which the steam generation rate varies greatly, the steam generation rate reaches a steady state in which the steam generation rate does not change over time.
  • the quantity Q, which is fed into the process chamber 2 is defined by a feed time during which the stationary steam flow is fed into the process chamber 2.
  • a layer to be deposited on a substrate consists of a plurality of individual layers stacked on top of one another, wherein each individual layer is deposited by firstly, in a preparatory step, the memory element 1 having the output.
  • the same mass is deposited on the storage surfaces of the storage element 1, wherein this mass substantially coincides with the mass which is evaporated in the respective step on the preparation step following coating step from the storage element 1 again, so that after each coating step in about the same residual mass remains on the storage surfaces, which preferably covers the storage areas only partially.
  • the storage element 1 is emptied so far that the degree of coverage of the storage surfaces with the starting material is below 20 percent and wherein the degree of coverage of the storage surfaces with the starting material before the start of the coating step is 100 percent.
  • a method which is characterized in that in the preparation step a maximum of 10 percent more than the measured mass, but preferably exactly the measured mass is deposited on the storage surfaces, which is evaporated in the coating step.
  • a method which is characterized in that, in several successive steps, in each case in a preparation step, a predetermined mass of the starting material is deposited on the storage surfaces and then the same mass is vaporized by application of energy in the coating step, wherein it is provided in particular After the coating step, a maximum of 10 percent of the mass which had been deposited on the storage surfaces before the beginning of the coating step is still present on the storage surfaces.
  • a method characterized in that a predetermined amount of energy is used for evaporation.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un dispositif et un procédé pour le dépôt d'une couche sur un substrat (5), une première masse d'une substance de départ étant déposée, dans une étape de préparation, sur des surfaces d'accumulation d'un élément d'accumulation (1) et, dans une étape de revêtement, la substance de départ étant évaporée à partir des surfaces d'accumulation et une masse dimensionnée de la substance de départ étant transportée au moyen d'un gaz porteur (C) dans une chambre de procédé (2), où une couche présentant la substance de départ ou un produit de réaction de la substance de départ est déposée sur le substrat (5). Dans l'étape de préparation, on dépose, sur les surfaces d'accumulation, au maximum 10 % de plus que la masse dimensionnée, de préférence toutefois exactement la masse dimensionnée, qui est évaporée par chauffage dans l'étape de revêtement. Fig. 2:
PCT/EP2018/064676 2017-06-08 2018-06-05 Procédé pour le dépôt de delo Ceased WO2018224454A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020197037993A KR102652774B1 (ko) 2017-06-08 2018-06-05 Oled들을 증착시키기 위한 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017112668.6 2017-06-08
DE102017112668.6A DE102017112668A1 (de) 2017-06-08 2017-06-08 Verfahren zum Abscheiden von OLEDs

Publications (1)

Publication Number Publication Date
WO2018224454A1 true WO2018224454A1 (fr) 2018-12-13

Family

ID=62567643

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2018/064676 Ceased WO2018224454A1 (fr) 2017-06-08 2018-06-05 Procédé pour le dépôt de delo

Country Status (4)

Country Link
KR (1) KR102652774B1 (fr)
DE (1) DE102017112668A1 (fr)
TW (1) TWI791534B (fr)
WO (1) WO2018224454A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019129176A1 (de) * 2019-10-29 2021-04-29 Apeva Se Verfahren und Vorrichtung zum Abscheiden organischer Schichten
DE102020103822A1 (de) 2020-02-13 2021-08-19 Apeva Se Vorrichtung zum Verdampfen eines organischen Pulvers

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0585848A1 (fr) * 1992-09-02 1994-03-09 Hoechst Aktiengesellschaft Procédé et dispositif de formation des films minces par dépôt chimique en phase vapeur
WO2002027064A1 (fr) * 2000-09-29 2002-04-04 Aixtron Ag Procede et dispositif pour l'extraction notamment de couches organiques dans le cadre de la deposition en phase vapeur organique
US7238389B2 (en) 2004-03-22 2007-07-03 Eastman Kodak Company Vaporizing fluidized organic materials
DE102011051260A1 (de) 2011-06-22 2012-12-27 Aixtron Se Verfahren und Vorrichtung zum Abscheiden von OLEDs
WO2012175126A1 (fr) 2011-06-22 2012-12-27 Aixtron Se Procédé et appareil pour un dépôt en phase vapeur
DE102011051263A1 (de) * 2011-06-22 2012-12-27 Aixtron Se Vorrichtung zur Aerosolerzeugung und Abscheiden einer lichtemittierenden Schicht
WO2012175128A1 (fr) 2011-06-22 2012-12-27 Aixtron Se Système de dépôt en phase vapeur et tête d'alimentation
WO2012175124A1 (fr) 2011-06-22 2012-12-27 Aixtron Se Source de matériau de dépôt en phase vapeur et son procédé de fabrication

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101226518B1 (ko) * 2008-09-30 2013-01-25 도쿄엘렉트론가부시키가이샤 증착 장치, 증착 방법 및 프로그램을 기억한 기억 매체
TWI528604B (zh) * 2009-09-15 2016-04-01 無限科技全球公司 發光、光伏或其它電子裝置及系統
DE102011051261A1 (de) * 2011-06-22 2012-12-27 Aixtron Se Verfahren und Vorrichtung zum Abscheiden von OLEDs insbesondere Verdampfungsvorrichtung dazu

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0585848A1 (fr) * 1992-09-02 1994-03-09 Hoechst Aktiengesellschaft Procédé et dispositif de formation des films minces par dépôt chimique en phase vapeur
WO2002027064A1 (fr) * 2000-09-29 2002-04-04 Aixtron Ag Procede et dispositif pour l'extraction notamment de couches organiques dans le cadre de la deposition en phase vapeur organique
US7238389B2 (en) 2004-03-22 2007-07-03 Eastman Kodak Company Vaporizing fluidized organic materials
DE102011051260A1 (de) 2011-06-22 2012-12-27 Aixtron Se Verfahren und Vorrichtung zum Abscheiden von OLEDs
WO2012175126A1 (fr) 2011-06-22 2012-12-27 Aixtron Se Procédé et appareil pour un dépôt en phase vapeur
DE102011051263A1 (de) * 2011-06-22 2012-12-27 Aixtron Se Vorrichtung zur Aerosolerzeugung und Abscheiden einer lichtemittierenden Schicht
WO2012175128A1 (fr) 2011-06-22 2012-12-27 Aixtron Se Système de dépôt en phase vapeur et tête d'alimentation
WO2012175124A1 (fr) 2011-06-22 2012-12-27 Aixtron Se Source de matériau de dépôt en phase vapeur et son procédé de fabrication

Also Published As

Publication number Publication date
KR20200016276A (ko) 2020-02-14
TW201905224A (zh) 2019-02-01
KR102652774B1 (ko) 2024-03-28
DE102017112668A1 (de) 2018-12-13
TWI791534B (zh) 2023-02-11

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