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WO2018138017A1 - Module à semi-conducteur - Google Patents

Module à semi-conducteur Download PDF

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Publication number
WO2018138017A1
WO2018138017A1 PCT/EP2018/051340 EP2018051340W WO2018138017A1 WO 2018138017 A1 WO2018138017 A1 WO 2018138017A1 EP 2018051340 W EP2018051340 W EP 2018051340W WO 2018138017 A1 WO2018138017 A1 WO 2018138017A1
Authority
WO
WIPO (PCT)
Prior art keywords
switching
switching cells
cells
semiconductor module
different
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2018/051340
Other languages
German (de)
English (en)
Inventor
Christoph Berndt Marxgut
Swen Ruppert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of WO2018138017A1 publication Critical patent/WO2018138017A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/127—Modifications for increasing the maximum permissible switched current in composite switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/40—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC
    • H02M5/42—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters
    • H02M5/44—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters using discharge tubes or semiconductor devices to convert the intermediate DC into AC
    • H02M5/453—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters using discharge tubes or semiconductor devices to convert the intermediate DC into AC using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M5/458—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters using discharge tubes or semiconductor devices to convert the intermediate DC into AC using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M5/4585—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters using discharge tubes or semiconductor devices to convert the intermediate DC into AC using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only having a rectifier with controlled elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08116—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/325—Means for protecting converters other than automatic disconnection with means for allowing continuous operation despite a fault, i.e. fault tolerant converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/327—Means for protecting converters other than automatic disconnection against abnormal temperatures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

Definitions

  • the invention relates to a semiconductor module for a
  • Power electronics circuit which should be used in particular for an electric or hybrid-electric drive system for an aircraft.
  • an electric or hybrid-electric drive system for propulsion of aircraft such as aircraft or helicopters, concepts based on electric or hybrid-electric propulsion systems are being investigated and used as an alternative to the conventional internal combustion engines.
  • Such a drive system generally has at least one electric machine, which is operated to drive the propulsion means of the aircraft as an electric motor.
  • a source of electrical energy for supplying the electric motor as well as a rule are a Leis ⁇ consumer electronics provided by means of which the electric motor is operated.
  • an internal combustion engine is provided, which, for example, is serially integrated into the drive system and, for example, drives a generator, which in turn provides electrical energy stored in a battery and / or supplied to an electric motor can be.
  • the power electronics connected upstream of the electric motor can be embodied as rectifiers, inverters or frequency converters and provide the electric motor with the electrical energy required for its operation in the suitable form.
  • a fault in the drive system can result in a crash of the aircraft result, coupled with corresponding risks to passen- gers and usually accompanied by considerable SachM ⁇ .
  • a fault among others in the energy storage which supplies the electrical energy for supplying the electric motor, in the electric motor and / or in the power electronics introduced above.
  • Such power electronics which can be embodied as described above and in WO2016005092A1, for example as a power converter, typically has a plurality of power semiconductors, for example IGBTs (insulated gate bipolar transistor), MOSFETs (metal oxide semiconductor field effect transistor), diodes, etc. a failure in such power semiconductors, eg. caused by excessive currents to ho he ⁇ frequencies, or by internal defects, resulting in a power converter that has no redundancy, directly to the failure of the entire converter. For applications where availability and reliability are essential, it is essential to develop redundant designs.
  • IGBTs insulated gate bipolar transistor
  • MOSFETs metal oxide semiconductor field effect transistor
  • a pragmatic approach is to provide the inverter as a whole at least twice, in order to activate the other inverter in case of failure of one of the two inverters, so that this takes over the function of the failed first inverter.
  • This approach has the disadvantage that weight, cost and volume of the system greatly raised stabili ⁇ hen.
  • a semiconductor module has a multiplicity of power electronic switching cells connected in parallel, wherein different switching cells of the plurality of switching cells are assigned to different groups of switching cells in such a way that each group of switching cells has at least one switching cell, but not all switching cells.
  • Each of the switching cells has an individual gate connection g for individually controlling the respective switching cell, wherein gate connections of different switching cells are not directly connected to each other, so that the different switching cells of the module can be controlled independently of one another by individual gate signals are. Consequently, the semiconductor module has a number of terminals corresponding to the number of switching cells for connecting the individual gate terminals to the controller.
  • not directly connected is intended to indicate that a control signal from the controller, which is supplied to a first switch cell does not automatically also achieved ei ⁇ ne second Sachaltzelle of the module.
  • the switching cells are indeed substantially directly connected to the controller, not Of course, it is not excluded that the second switch cell receives the same control signal as the first switch cell, but this is only possible on the way that the controller controls this Control signals individually to the second switching cell ⁇ leads.
  • a power electronics circuit is configured such that the circuit comprises a plurality of semiconductor modules, wherein in each of the semiconductor modules more switching cells or Leis ⁇ semiconductor processing are integrated.
  • Each switching cell for example an IGBT or a MOSFET, has, inter alia, a gate connection or contact, wherein the individual gate connections of the different switching cells of the respective module can be controlled individually and basically independently of one another by a control of the power electronics circuit.
  • An important point here is that a switching cell is a single IGBT or MOSFET or similar. is, but not an interconnection of several such semiconductors. The number of separate switching cells is arbitrary in each module and can be selected depending on Redun ⁇ danz band.
  • each cell can be switched or controlled individually by means of a separate gate signal in this realization.
  • errors that affect the gate drive itself for example, a failure of the gate driver of one of the switching cells, not directly to the failure of the module, since not every cell is affected by this error.
  • a sensor which thermally monitors each group of switching cells individually thermally, wherein the individual control of the various switching cells in Depending on a respective result of the thermal monitoring takes place. For example. If, for one group, an increased, possibly critical temperature is determined, this group can be deactivated and another group activated.
  • the number of thermal cycles in the active and / or deactivated state can also be monitored for the switching cells. This allows on the one hand that a uniform loading of different switching groups of cells is ensured and can be used for maintenance of the modules also by means of lifetime ⁇ model.
  • cooling circuits for cooling the switching cells, wherein the cooling circuits are arranged to ⁇ such that different cooling circuits cool different groups of switching cells.
  • the controller is then set up to control the various cooling circuits in such a way that an operating switching cell is cooled more strongly than a switching cell not in operation.
  • the cooling is therefore activated for those groups that are in operation at a particular time and throttled for those groups that are not in operation at the time.
  • power modules are typically utilized only to a certain degree of their specified withstand voltage (eg up to 40% -60%), which leads to a considerable oversizing of the converter.
  • the required high dielectric strength of the switching cells comes at the expense of higher Leit ⁇ losses, which reduces the efficiency of the inverter.
  • the modules presented here could consist of switching cells of different voltage strengths, which are then controlled at the respective operating point in such a way that either switching cells are activated whose behavior is optimized for immunity to cosmic radiation or switch cells that are fully utilized and thus the efficiency improve the converter.
  • the controller is set up in such a way that the switching cells are controlled or operated in such a way that either switching cells are activated whose behavior is optimized for the greatest possible degree of immunity to cosmic radiation, or switching cells are activated which can be used up to their maximum dielectric strength.
  • different switching cells via un ⁇ ter Kunststofferie communication channels are controlled.
  • one group of switch cells is electrically driven, while another group is optically driven. This also has a positive effect on the degree of redundancy of the semiconductor module.
  • a module can therefore consist of different semiconductor switch technologies. It is thus conceivable, for example, for an IGBT cell to be parallel to a MOSFET cell is arranged. Since each cell is separately controllable, the module can connect the best of the two technologies.
  • the switching cells can also be assigned in each case a fuse, wherein the fuse is in each case designed and interconnected with the associated switching cell that at overcurrent load of the fuse associated switching cell, the respective switching cell is functionally separated from the module, ie the respective fuse blows.
  • the Siche ⁇ approximations can, for example, from one or more bond wires are made to separate in case of current stress the corresponding cell from the module.
  • each switching cell and each cell could be a different Si insurance and an individual current capacity supplied ⁇ item.
  • the value of the overcurrent shutdown can be changed during operation by means of the correct gate signal control depending on the application or operating point.
  • each of said fuses is constructed and interconnected with the at ⁇ parent switching cell, that in Studentsstrombe ⁇ liqueung of the associated fuse switch cell the respective switch cell functionally from Module is disconnected, and wherein the controller is arranged such that in a normal operation of the semiconductor module only switching cells are used, which is associated with a fuse, and only in the presence of a fault in the semiconductor module, a switching cell is used without associated fuse.
  • ⁇ can be here at various cubicles with fuses equipped kitchens ⁇ tet that trigger at different current levels.
  • the groups of switching cells can be operated alternately such that in a first time period only a first group of switching cells is operated, while a second group of switching cells is not operated in the first time period. Consequently, in a second period following the first period, only the second group of switching cells is operated, while the first group of switching cells is not operated in the second period, and so on.
  • thermal balancing of the module can be achieved and thus the reliability of the module can be improved.
  • the respective subset of the cells which are put into operation at the same time can also be advantageously distributed thermally on the module.
  • the terms "run” or “in use” or “acti ⁇ fourth” etc. are to be understood as that a for example. "Rate at work ⁇ " switch cell from the controller located so attached is ⁇ controlled to be the intended Task completed. It will therefore be present at the gate terminal of a switching cell in operation a corresponding kind of control signal. If a switching cell is not in operation, there will typically be no signal at the gate terminal.
  • weight saving can be achieved on account of the compact module structure presented here and the resulting converter design, since housing, wiring, carrier germaterialien and gate driver circuits can be saved.
  • the design of the gate driver circuits of the module described herein can increase reliability in several ways:
  • the individual switching cells can be controlled with different communication channels. For example. one group of switch cells is electrically driven, while another group is optically driven.
  • FIG. 1 shows the power electronics circuit 1 known from WO2016005092A1 and designed there as a converter, which has a rectifier 2, an intermediate circuit 3, an inverter 4 and a control device 5.
  • a voltage source 6 for example an electric generator
  • an electrical consumer 7 for example an electric motor
  • the voltage source 6 can be connected to the rectifier 2 via phase lines 8.
  • the consumer 7 can be connected via phase lines 9 to the inverter 4 be.
  • AC voltages of different phases can be transmitted in each case via the phase lines 8, 9.
  • a DC voltage 10 can be generated by the rectifier 2, which is fed into the DC link 3.
  • the intermediate ⁇ circle 3 may have a positive line 11 and a minus line 12, between which the DC voltage 10 is applied.
  • the positive lead 11 and the negative lead 12 can terie a Bat-13 may be an intermediate circuit capacitor 14 and coupled through which an intermediate circuit capacitance C encouragege ⁇ represents is.
  • the plus line 11 and the minus line 12 couple the rectifier 2 and the inverter 4, respectively.
  • the plus line 11, the minus line 12 and the phase lines 8, 9 may each be provided, for example, by a wire or a bus bar.
  • the converter 1 converts the alternating voltages in the phase conductors 8 into alternating voltages, which are supplied to the load 7 via the phase conductors 9.
  • the rectifier 2 and the inverter 4 each have half bridges 17, each of which connects or connects the plus line 11 and the minus line 12 to another one of the phase lines 9. For clarity, only two of the half bridges 17 are provided with a reference numeral.
  • Each half-bridge 17 may include two switch assemblies 18, have ⁇ 19th At each half-bridge 17, the switch arrangement 18 connects the plus line 11 to the respective phase line 9.
  • the switch arrangement 19 connects the minus line 12 to the same phase line 9.
  • the rectifier 2 and the inverter 4 may have the same circuit topology, ie they may be of identical construction.
  • the rectifier 2 and the inverter 4 have the switch arrangements
  • each switching cell 20, 21 is a separate fuse 22 connected in series. In each switch assembly 18, 19 so a parallel circuit of a plurality of series circuits or switching branches Z is provided, each switching branch Z is formed on the basis of a switching cell 20, 21 and a fuse 22.
  • Each switching cell 20, 21 may, for example, be designed as an IGBT or MOSFET.
  • each module 18, 19 is equipped with two switch cells 20, 21, but it is conceivable that more than two switch cells per module are provided to further improve the redundancy or the reliability.
  • These would be connected in an analogous manner, that is, the emitter contacts e of the switching cells would be connected to the common emitter terminal E of the module, the collector contacts k of the switching ⁇ cells would be connected to the common collector terminal C of the module and the gate-input g of the circuit cells would connected to the common gate or control terminal G of the module.
  • FIG. 2 shows a modification of the power electronics circuit 1 shown in FIG. 1, in particular with respect to the semiconductor modules 18, 19. Since these modules 18, 19 are constructed identically, the module 18 will be described below by way of example, the explanations regarding the structure and mode of operation apply in the same way for the module 19.
  • the module 18 has, by way of example, four switching cells 20a, 20b, 20c, 20d, whose collector contacts in turn fuses on Si 22 are connected to the common collector terminal K of Mo ⁇ duls 18th Of course, in turn, more or less than four switching cells 20 may be provided.
  • the emitter contacts e of the switching cells 20a, 20b, 20c, 20d are also connected to the common emitter terminal E of the module 18 as in FIG. Unlike the execution of the
  • the gate or control are now contacts ⁇ g of switching cells 20a, 20b, 20c, 20d no longer connected to each other and no longer with the common control terminal of the module. Consequently, the semiconductor module 18 has a number of terminals ga, gb, gc, gd corresponding to the number of switching cells 20a-20d for connecting the individual gate terminals g to the controller 5.
  • the gate contacts g are the Switching cells 20a, 20b, 20c, 20d connected via the terminals or Kon ⁇ clocks ga, gb, gc, gd of the module 18 to the controller 5 such that the controller 5, the switching cells 20a, 20b, 20c, 20d independently and individually can drive.
  • the semiconductor module 18 thus comprises a plurality of parallel-connected power electronic switching cells 20a, 20b, 20c, 20d, each having an individual gate connection g for the individual control of the respective
  • Switching cell 20a, 20b, 20c, 20d wherein the switching cells 20a, 20b, 20c, 20d of the module 18 by the controller 5 are independently controllable with individual, possibly different gate or control signals.
  • the controller 5 may be configured such that only some of the switching cells 20a-20d, but not all, are used in the operation of the converter 1. Thus, only part of the switching cells 20a-20d of the module 18 are operated simultaneously. For example. can each switching cell 20a, 20b, 20c, 20d are thermally monitored using ent ⁇ speaking sensors 31 and spruchung protected or charged depending on the stresses.
  • the sensors 31 are connected to the controller 5, so that these ansteu ⁇ ren, the switch cells 20a-20d in response to the sensor data suitable. For example. this can be made such that when Sensorda ⁇ th, suggesting 20a to an elevated critical temperature of the cubicle, the controller 5, the switching cell
  • the FIG 2 further indicates that the switching cells 20a-20d may be assigned to different groups 41, 42 of switching cells.
  • Each group 41, 42 of switching cells has at least one of the switching cells 20a-20d of the module 18, but not all of the switching cells 20a-20d of the module 18.
  • a first group 41 comprises the switching cells 20a, 20b
  • a second group 42 comprises the switching cells 20c, 20d.
  • the assignment of switching cells 20a-20d to the groups 41, 42 can be adapted at any time by means of the controller in a suitable manner.
  • additional groups as required or assigned to existing groups are removed using the Steue ⁇ tion.
  • the controller 5 may be configured such that the Grup ⁇ pen 41, 42 are operated alternately by switching cells. That is, in a first period, only the switching cells 20a, 20b of the first group 41 are used while the switching cells 20c, 20d of the second group 42 are not active. In a subsequent second period, on the other hand, only the switching cells 20c, 20d of the second group 42 are used while the switching cells 20a, 20b of the second group 41 are not active, etc.
  • this mode of operation also includes the option that the individual switching cells 20a-20d of the module 18 are alternately be ⁇ exaggerated, since the above definition of "group" which also provides for the case that the groups each have only a single switching cell. This would mean that, for example, first the switch cell 20a, then the cell 20b, then the
  • Cell 20c and finally the cell is activated 20d, currency ⁇ rend each other cells are not used. It is also conceivable that, for example, the cells 20a, 20b each form an egg ⁇ gene group for themselves, while the cells 20c, 20d are assigned to a common group, and that these three groups are operated alternately.
  • each switching cell 20a-20d is thermally monitored, but only one switching cell per group.
  • the respective subset of the switching cells which are associated with a common men group and accordingly gleichzei ⁇ tig be put into operation, can be distributed thermally advantageous on the module 18.
  • a plurality of cooling circuits 51, 52 for cooling the switching cells 20a-20d are present.
  • each group 41, 42 an individually assigned and operated by the controller 5 as needed cooling circuit 51, 52 may be provided.
  • the controller 5 is accordingly set up to control the various cooling circuits 51, 52 in such a way or with a suitable one
  • the life span can also be positively influenced by adapted, individual cooling, for example by selectively cooling the groups in operation, for example the first group 41, while selectively throttling the cooling of the groups which are not in operation, for example group 42 is, so that the individual switching cells 20a-20d, for example, learn no additional passive temperature fluctuations, if the temperature of the cooling medium should change due to changes in ambient conditions.
  • separately controllable switch cell groups 41, 42 of the module 18 can be connected to a cooling plate (not shown) of different sizes, in order to find a compromise between common-mode EMC emissions and thermal connection.
  • connection surface to the cooling plate guarantees good ther ⁇ mical properties because of ei ⁇ nes correspondingly low thermal resistance, but a high parasitic capacitance between the switching cell and heat sink, resulting in high common mode EMC emissions.
  • the module has 18 switching cells of different dielectric strength. For example, the switching cells 20a, 20b of the first
  • Group 41 may be designed so that they work reliably even at the expected he ⁇ waiting strong cosmic radiation at high altitude. This requires that the switching cells 20a, 20b be allowed to operate only to a certain degree, for example 40-60%, of their specified dielectric strength, which ultimately means that they must be made very oversized in order to still provide the required power to be able to.
  • the switching cells 20c, 20d of the second group 42 would be designed so that they can be fully utilized and exploited, which makes them less reliable for operation with appreciable cosmic radiation, but ver ⁇ speaks at low altitudes that the module 18th and thus the inverter 1 operates with ho ⁇ her efficiency.
  • the controller 5 would thus operate the thus equipped first group 41 when the aircraft is at a level with significantly increased cosmic radiation, while dispensing with the use of the first group 41 due to the non-optimal efficiency when the altitude and thus the cosmic radiation is lower. In the latter case, the controller 5 would operate the module 18 with the harnesseffizien ⁇ th second group 42 with the switch cells 20c, 20d.
  • the switching cells 20a-20d may be selected differently such that the switching cells 20a, 20b or 20c, 20d of the various groups 41, 42 via different communication channels are controlled Kings ⁇ nen.
  • the switching cells 20a, 20b of the first group 41 are electrically driven, while the switching cells 20c, 20d of the second group 42 are optically driven.
  • the switching cells 20a-20d may be selected differently such that the switching cells 20a, 20b, 20c, 20d of the various groups 41, 42 are based on different semiconductor switch technologies.
  • the switching cells 20a, 20b of the first group 41 may be MOSFET cells, while the switching cells 20c, 20d of the second group 42 may be IGBT cells. It is also conceivable that the cells of a group are based on different semiconductor switch technologies. Since each cell 20a-20d is separately controllable, the module 18 with the aid of
  • Control 5 depending on the situation, use the best technology.
  • the controller may operate to turn on a MOSFET based switch cell 20a, 20b just before an IGBT based switch cell 20c, 20d to avoid the high turn on losses of the IGBT.
  • the IGBT cell 20c, 20d can be switched on with low loss and take over the current because of its good conducting properties.
  • the switching off of the module 18 is initiated by the low-loss switching off of the IGBT cell 20c, 20d.
  • FIG. 3 shows a semiconductor module 18 in a modification modified to the effect that not all switching cells 20a-20d are assigned a fuse 22.
  • the switching cells 20a, 20c are each assigned its fuse 22, while the switching cells 20b, 20d are integrated into the module 18 without a fuse.
  • the module 18 can be used in normal operation with fuse 22 and only in case of failure is an unsecured switching cell 20b, 20d ⁇ controls or used.
  • Each switching cell 20a-20d can be optimized with respect to the switching behavior by the respective gate driver circuit, for example by adjusting the gate resistances, the gate voltage, the maximum gate current, etc.
  • each switching cell 20a-20d of the module 18 can be achieved in order to limit voltage spikes due to different parasitic inductances, and to completely exhaust the limits of each switching cell 20a-20d of the module 18.
  • Such gate drive circuits are, for example, on a separate board arranged, which lies very close to the supplied ⁇ hearing module in order to minimize parasitic effects.
  • the controller 5 supplies the gate driver circuit with corresponding control signals.
  • Each switching cell 20a-20d can also, by specially abandonedleg ⁇ te gate driver circuits, a certain Wegschwindig ⁇ speed (di / dt and dv / dt) can be assigned, which is depending on the Ar ⁇ beitsddling used.
  • a certain GmbHgeschwindig ⁇ speed di / dt and dv / dt
  • the flexible structure of the module 18 also allows the sepa ⁇ rATOR fuse of diode and switching cell.
  • the number of switching cells and the number of diodes can also be different.
  • a module could consist of five active switching cells (eg IGBTs) and two diodes if, in a previous analysis, diodes have been shown to have a much lower probability of failure.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)

Abstract

L'invention concerne un module à semi-conducteurs destiné à un circuit électronique de puissance et présentant une pluralité de cellules de commutation électroniques de puissance montées en parallèle, différentes cellules de commutation de la pluralité de cellules de commutation étant affectées à différents groupes de cellules de commutation de telle manière que chaque groupe de cellules de commutation présente au moins une cellule de commutation mais ne présente pas toutes les cellules de commutation. Chacune des cellules de commutation présente un raccordement de grille individuel pour la commande individuelle de la cellule de commutation concernée, les raccordements de grille des différentes cellules de commutation n'étant pas directement connectés les uns aux autres, de sorte que les différentes cellules de commutation du module peuvent être activées indépendamment les unes des autres par des signaux de grille individuels.
PCT/EP2018/051340 2017-01-25 2018-01-19 Module à semi-conducteur Ceased WO2018138017A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102017201176 2017-01-25
DE102017201176.9 2017-01-25
DE102017206553.2A DE102017206553A1 (de) 2017-01-25 2017-04-19 Halbleitermodul
DE102017206553.2 2017-04-19

Publications (1)

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WO2018138017A1 true WO2018138017A1 (fr) 2018-08-02

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PCT/EP2018/051340 Ceased WO2018138017A1 (fr) 2017-01-25 2018-01-19 Module à semi-conducteur

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* Cited by examiner, † Cited by third party
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DE102018213182A1 (de) * 2018-08-07 2020-02-13 Bayerische Motoren Werke Aktiengesellschaft Kontrollsystem für ein Kraftfahrzeug und Verfahren zur Fehlerdiagnose bei einem Kontrollsystem
DE102022120996A1 (de) 2022-08-19 2024-02-22 Dr. Ing. H.C. F. Porsche Aktiengesellschaft Betrieb eines Wechselrichters mit mehreren Halbleiterchips pro Leistungsschalter

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001069784A1 (fr) * 2000-03-15 2001-09-20 Ct-Concept Technologie Ag Procede pour l'exploitation d'un montage en parallele d'interrupteurs de puissance a semi-conducteur
EP1783885A2 (fr) * 2005-11-05 2007-05-09 Semikron Elektronik GmbH & Co. KG Patentabteilung Circuit d'agencement pour commander des circuits électroniques de puissance
US20140091853A1 (en) * 2012-10-01 2014-04-03 Kabushiki Kaisha Toyota Jidoshokki Switching circuit
US20150015998A1 (en) * 2013-07-09 2015-01-15 Remy Technologies, Llc. Solid state switch
WO2016005092A1 (fr) 2014-07-09 2016-01-14 Siemens Aktiengesellschaft Convertisseur ayant des combinaisons redondantes d'interrupteur-coupe-circuit à fusible et procédé de déclenchement sélectif de la sécurité dans le cas d'une défaillance d'interrupteur
WO2016005166A1 (fr) 2014-07-09 2016-01-14 Siemens Aktiengesellschaft Circuit électronique de puissance redondant présentant des montages série en parallèle comprenant semi-conducteur de puissance et coupe-circuit
EP3021485A1 (fr) * 2013-08-30 2016-05-18 AutoNetworks Technologies, Ltd. Dispositif à semi-conducteurs
DE102014224169A1 (de) * 2014-11-26 2016-06-02 Robert Bosch Gmbh Verfahren und Vorrichtung zum Ansteuern parallel geschalteter Leistungshalbleiterschalter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19920505B4 (de) 1999-05-05 2004-05-27 Semikron Elektronik Gmbh Umrichter mit Temperatursymmetrierung

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001069784A1 (fr) * 2000-03-15 2001-09-20 Ct-Concept Technologie Ag Procede pour l'exploitation d'un montage en parallele d'interrupteurs de puissance a semi-conducteur
EP1783885A2 (fr) * 2005-11-05 2007-05-09 Semikron Elektronik GmbH & Co. KG Patentabteilung Circuit d'agencement pour commander des circuits électroniques de puissance
US20140091853A1 (en) * 2012-10-01 2014-04-03 Kabushiki Kaisha Toyota Jidoshokki Switching circuit
US20150015998A1 (en) * 2013-07-09 2015-01-15 Remy Technologies, Llc. Solid state switch
EP3021485A1 (fr) * 2013-08-30 2016-05-18 AutoNetworks Technologies, Ltd. Dispositif à semi-conducteurs
WO2016005092A1 (fr) 2014-07-09 2016-01-14 Siemens Aktiengesellschaft Convertisseur ayant des combinaisons redondantes d'interrupteur-coupe-circuit à fusible et procédé de déclenchement sélectif de la sécurité dans le cas d'une défaillance d'interrupteur
WO2016005166A1 (fr) 2014-07-09 2016-01-14 Siemens Aktiengesellschaft Circuit électronique de puissance redondant présentant des montages série en parallèle comprenant semi-conducteur de puissance et coupe-circuit
DE102014224169A1 (de) * 2014-11-26 2016-06-02 Robert Bosch Gmbh Verfahren und Vorrichtung zum Ansteuern parallel geschalteter Leistungshalbleiterschalter

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