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WO2018131529A1 - Dispositif de formation de film - Google Patents

Dispositif de formation de film Download PDF

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Publication number
WO2018131529A1
WO2018131529A1 PCT/JP2018/000034 JP2018000034W WO2018131529A1 WO 2018131529 A1 WO2018131529 A1 WO 2018131529A1 JP 2018000034 W JP2018000034 W JP 2018000034W WO 2018131529 A1 WO2018131529 A1 WO 2018131529A1
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WO
WIPO (PCT)
Prior art keywords
chamber
electrode
film forming
electrode unit
forming apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/000034
Other languages
English (en)
Japanese (ja)
Inventor
酒井　博史
敏行 陣田
康二 馬場
知 福永
英昭 政田
一規 青江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Choshu Industry Co Ltd
Toray Engineering Co Ltd
Original Assignee
Choshu Industry Co Ltd
Toray Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Choshu Industry Co Ltd, Toray Engineering Co Ltd filed Critical Choshu Industry Co Ltd
Publication of WO2018131529A1 publication Critical patent/WO2018131529A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Definitions

  • the present invention relates to a film forming apparatus for forming a thin film on a base material.
  • a conventional plasma CVD apparatus includes a chamber for containing a base material and a discharge electrode, a gas introduction part for introducing a source gas into the chamber, a gas discharge part for discharging the gas in the chamber, and a high-frequency current to the electrode.
  • a power supply unit and the like for supply are provided.
  • the electrode 90 includes a folded portion 93 that folds and connects the straight portions 91 and 92 in addition to the pair of elongated straight portions 91 and 92.
  • the straight portions 91 and 92 pass through the wall portion 98 on one side (left side in FIG. 5) of the chamber 99.
  • the straight portions 91 and 92 include a matching unit 100 and a high frequency outside the figure.
  • the power supply is connected.
  • a flange 94 is provided on one side (left side in FIG. 5) of the electrode 90 in order to ensure airtightness in the chamber 99 (reaction chamber 99a).
  • a seal member such as an O-ring is interposed between the two.
  • the folded portion 93 on the opposite side is located outside the vacuum chamber 99 and exposed to the atmosphere (see, for example, FIG. 2 of Patent Document 1). This prevents abnormal discharge that may occur in the folded portion 93, or prevents the plasma density from being increased in the folded portion 93 to promote gas decomposition and adversely affect the uniformity of film thickness and film quality. It is to do.
  • the chamber 99 is not disassembled, but first, the water in the copper tube 90a of the electrode 90 is drained, the folded portion (copper tube block) 93 is removed, and the copper tube 90a of the electrode 90 is removed. And the quartz tube 90b on the outer periphery thereof is carefully pulled out of the chamber 99.
  • an electrode unit 96 in which the copper tube 90a, the quartz tube 90b, the folded portion 93, and the flanges 94 and 95 are integrated is configured, and the flanges 94 and 95 and the chamber 99 (wall portion 98, 97), it is conceivable to extract the electrode unit 96 integrally (to the left in FIG. 5) from the hole 98a formed in the wall 98.
  • the electrode unit 96 is extracted from the chamber 99 and maintenance such as cleaning is completed, the electrode unit 96 is inserted from the hole 98a of the wall portion 98 on one side, The folded portion 93 needs to be inserted into the hole 97a of the wall 97 on the other side.
  • the other side (right side in FIG. 5) of the electrode unit 96 is easily bent during the returning operation as described above.
  • the flange 95 is inclined with respect to the wall portion 97 of the chamber 99, and it is difficult to interpose a sealing member such as an O-ring in an appropriate state between the flange 95 and the wall portion 97. Cost. If the sealing member is not returned to an appropriate state, the airtightness of the chamber 99 cannot be guaranteed, and the film forming operation is hindered.
  • an object of the present invention is to provide a film forming apparatus that can be easily restored after maintenance.
  • the film forming apparatus of the present invention includes a chamber that accommodates a base material, and an electrode for discharge for performing film formation on the base material in the chamber, and an electrode that is detachably provided in the chamber.
  • a unit, and the electrode includes a plurality of linear portions, and a folded portion connecting one linear portion and another linear portion, and the electrode unit further includes the folded portion.
  • An atmospheric box that covers the part and has an internal airtightness, and the atmospheric box is provided in the chamber.
  • the atmospheric box is attached to the folded portion side of the electrode outside the chamber, and then the chamber is installed in the chamber. You just have to install it.
  • work to ensure airtightness inside the atmospheric box that covers the folded part of the electrode can be performed outside the chamber, so that it is difficult to assemble the electrode after maintenance as in the past, or airtightness
  • the problem that it is difficult to secure the problem is solved.
  • returning part of an electrode is covered with the air
  • the film forming apparatus further includes detection means for detecting the airtightness of the atmospheric box.
  • the electrode unit further includes a through portion that is a portion on the opposite side of the folded portion and penetrates the first wall portion of the chamber, and is provided in the through portion with respect to the first wall portion.
  • the chamber has a support portion that is provided on a second wall portion facing the first wall portion and supports the atmosphere box side. .
  • the electrode unit is attached to the first wall portion of the chamber via a flange, and the second wall portion on the opposite side is supported by the support portion. It is supported stably on both sides in the longitudinal direction.
  • the electrode unit further includes a through portion that is a portion on the opposite side of the folded portion and penetrates the first wall portion of the chamber, and is provided in the through portion with respect to the first wall portion.
  • a flange that is detachably attached, and the detection means has a leak check pipe having one end opened in the atmospheric box and the other end connected to the flange. preferable. In this case, the leak check pipe can be removed together with the electrode unit, and maintenance is facilitated.
  • the film forming apparatus of the present invention it is easy to return the electrode unit after maintenance.
  • FIG. 1 It is the schematic which shows one Embodiment of the film-forming apparatus of this invention. It is the schematic which shows a part of film-forming apparatus shown in FIG. It is a top view of an electrode unit. It is a side view of a power supply unit. It is a top view which shows the one part schematic structure of the conventional film-forming apparatus.
  • FIG. 1 is a schematic view showing an embodiment of a film forming apparatus of the present invention.
  • FIG. 2 is a schematic diagram (a view of arrow A in FIG. 1) showing a part of the film forming apparatus 7 shown in FIG.
  • the film forming apparatus 7 includes a chamber 10 that accommodates a base material W and an electrode unit 20 provided in the chamber 10.
  • the film forming apparatus 7 further includes a first gas introduction part 51 and a second gas introduction part 52 that introduce gas into the chamber 10, a gas discharge part 55 that discharges the gas in the chamber 10, and the electrode unit 20.
  • a power supply unit 60 (see FIG. 2) for supplying a high-frequency current to the electrode (ICP electrode) 25 included in FIG.
  • the power supply unit 60 includes a matching unit in addition to the high frequency power supply.
  • the film forming apparatus 7 is a plasma CVD apparatus for forming a thin film on the substrate W by plasma generated by the electrode 25 while the inside of the chamber 10 is in a vacuum state.
  • a silicon nitride film is generated as a thin film.
  • the base material W may be a sheet-like substrate, in this embodiment, the base material W is a belt-like member (resin film) conveyed by roll-to-roll.
  • the chamber 10 is formed of a box, and is configured using, for example, an insulating material such as glass or a metal material such as stainless steel.
  • the chamber 10 shown in FIG. 1 is partitioned by a shielding plate 13 into a reaction chamber 11 in which the substrate W is present and a plasma generation chamber 12 adjacent thereto.
  • the shielding plate 13 is made of, for example, a thin metal net and functions as an ion trap. Then, the chamber 10 is evacuated by a vacuum pump 56.
  • An electrode unit 20 is provided in the plasma generation chamber 12.
  • two sets of electrode units 20 are provided, and as shown in FIG. 2, these are electrically connected in parallel to the power supply unit 60.
  • Each of the two sets of electrode units 20 is the same, and is configured to be long along the width direction of the chamber 10.
  • the direction orthogonal to the width direction of the chamber 10 is the transport direction of the substrate W. A specific configuration of the electrode unit 20 will be described later.
  • the first gas introduction part 51 includes a pipe 51a, a valve 51b, and a first gas tank 51c.
  • the first gas introduction unit 51 is connected to the plasma generation chamber 12 and supplies the first gas to the plasma generation chamber 12.
  • the first gas is a plasma generation gas and can be, for example, ammonia gas or nitrogen gas serving as a nitrogen source.
  • the second gas introduction part 52 includes a pipe 52a, a valve 52b, and a second gas tank 52c.
  • the second gas introduction part 52 is connected to the reaction chamber 11 and supplies the second gas to the reaction chamber 11.
  • the second gas is a film forming gas, and can be, for example, hexamethyldisilazane gas (HDMS gas) serving as a nitrogen source and a silicon source.
  • HDMS gas hexamethyldisilazane gas
  • the gas discharge part 55 includes a pipe 55 a and a valve 55 b, and is connected to the vacuum pump 56 and the reaction chamber 11.
  • the gas discharge part 55 discharges the gas in the reaction chamber 11.
  • the chamber 10 is a sealed space, and the inside of the chamber 10 is evacuated. Specifically, the pressure is reduced by the vacuum pump 56 until the pressure in the chamber 10 becomes a predetermined value or less. Further, the plasma generating gas is introduced into the plasma generating chamber 12 by opening the valve 51b, and the film forming gas is introduced into the reaction chamber 11 by opening the valve 52b. When the pressure in the reaction chamber 11 decreases to a predetermined value, the opening of the valves 51b, 52b and the valve 55b is controlled to maintain the pressure in the reaction chamber 11 at a predetermined value while supplying the plasma generating gas and the film forming gas. To do.
  • a high frequency current is passed from the power source 60 to the electrode 25.
  • the electrode 25 receives high-density plasma, and the surface reaction is sequentially performed on the surface as the substrate W moves. Then, a silicon nitride film is formed. As described above, film formation on the substrate W is performed.
  • FIG. 3 is a plan view of the electrode unit 20, and FIG. 4 is a side view of the electrode unit 20.
  • the electrode unit 20 includes an electrode 25, an electrode frame 26, an atmospheric box 27, a first flange 28, and a second flange 29, which are integrally formed.
  • the electrode unit 20 is attached to the chamber 10 in a state of passing through a hole 16 a formed in the first wall portion 16 provided in the chamber 10.
  • the electrode unit 20 can be detached from the chamber 10 as will be described later.
  • the electrode unit 20 can be removed from the chamber 10 by releasing the fastening of the first flange 28 to the chamber 10 with a bolt or the like.
  • the two electrode units 20 are provided in the plasma generation chamber 12, but each of the electrode units 20 can be detached from the chamber 10 independently.
  • the electrode 25 has two straight portions 31 and 32, and a folded portion 33 that folds and connects one straight portion 31 and another straight portion 32, and is a U-shaped electrode (see FIG. 3).
  • Each of the straight portions 31 and 32 includes a copper tube 34 and a quartz tube 35 provided on the outer periphery thereof.
  • the folded portion 33 is made of a copper block, and a flow path continuous with the hollow portion of the copper pipe 34 is formed inside. A cooling medium (water) flows through the hollow portion of the copper tube 34 and the flow path of the copper block (the folded portion 33).
  • the electrode frame 26 is a member that accommodates the two straight portions 31 and 32, and is made of steel such as stainless steel.
  • the electrode frame 26 has a box shape that is long in the same direction as the longitudinal direction of the straight portions 31 and 32, but opens toward the reaction chamber 11 (see FIG. 1).
  • a first flange 28 is attached to one longitudinal side of the electrode frame 26 (left side in FIG. 3), and a second flange 29 is attached to the other longitudinal side of the electrode frame 26 (right side in FIG. 3).
  • An atmospheric box 27 is attached to the second flange 29.
  • the first flange 28 is attached to the first wall portion 16 of the chamber 10 by a bolt (fastening member). By removing this bolt, the electrode unit 20 can be removed from the first wall portion 16. Further, although not shown, a sealing member such as an O-ring is interposed between the flange 28 and the first wall portion 16 to ensure airtightness in the chamber 10. As described above, the electrode unit 20 has the penetrating portion 30 penetrating the first wall portion 16, and the first flange 28 provided in the penetrating portion 30 is connected to the first wall portion 16. And is detachably attached.
  • the through portion 30 is a portion on the opposite side of the folded portion 33 of the electrode 25 (in the longitudinal direction of the electrode 25), a part of the copper tube 34, a part of the quartz tube 35 on the outer peripheral side of this part, And a part constituted by a part of the electrode frame 26 surrounding these parts.
  • the atmospheric box 27 has a base portion 38 that passes through the straight portions 31 and 32 of the electrode 25, and a cover portion 36 that is attached to the base portion 38.
  • the base portion 38 has a plate shape
  • the cover portion 36 has a bottomed cylindrical shape
  • a space 37 is formed between the base portion 38 and the cover portion 36 by covering the base portion 38 with the cover portion 36. 37, the folded portion 33 of the electrode 25 is accommodated.
  • the base portion 38 and the cover portion 36 are connected by a bolt or the like so that they can be disassembled, and a seal member such as an O-ring is interposed therebetween.
  • a seal member such as an O-link is interposed between the base portion 38 and each of the straight portions 31 and 32 of the electrode 25.
  • the space 37 in the atmospheric box 27 is secured in a sealed state. Since the atmosphere box 27 is assembled in the atmosphere, the space 37 is at atmospheric pressure.
  • the atmospheric box 27 is provided in the plasma generation chamber 12 in the chamber 10 together with the electrode 25. During film formation, the plasma generation chamber 12 is evacuated, but the atmospheric box 27 is maintained at atmospheric pressure.
  • the film forming apparatus 7 of the present embodiment includes the electrode unit 20 that is detachably provided in the chamber 10.
  • the electrode unit 20 covers the discharge electrode 25 for forming a film on the base material W in the chamber 10, and the atmospheric box 27 that covers the folded portion 33 of the electrode 25 and has an airtightness inside.
  • the chamber 10 has a first wall portion 16 and a second wall portion 17 that are separated from each other on both sides in the width direction (see FIG. 2), and the straight portions 31 and 32 of the electrode 25 and the electrode 25.
  • the atmospheric box 27 that accommodates the folded portion 33 is provided between the first wall portion 16 and the second wall portion 17. That is, the atmospheric box 27 is provided in the chamber 10 together with the straight portions 31 and 32 of the electrode 25.
  • the film forming apparatus 7 having this configuration, when the electrode unit 20 is removed from the chamber 10 and maintenance such as cleaning is performed and then returned, first, the folded portion of the electrode 25 outside the chamber 10 in the atmosphere. Atmosphere box 27 is attached to 33 side, and electrode unit 20 is made into an assembly completion state. Then, the electrode unit 20 is inserted into the chamber 10 through the hole 16a (see FIG. 3) of the first wall portion 16 of the chamber 10, the first flange 28 is fixed to the first wall portion 16, and the electrode unit 20 is placed in the chamber. 10 is installed.
  • the conventional see FIG.
  • the chamber 10 includes a support portion 18 that supports the air box 27 side of the electrode unit 20.
  • the support 18 is provided on the second wall 17 that faces the first wall 16.
  • the support portion 18 is a member fixed to the second wall portion 17.
  • a projection 39 is provided on the cover portion 36 of the atmospheric box 27.
  • the film forming apparatus 7 further includes a detection unit 40 (see FIG. 3) that detects the airtightness of the atmospheric box 27.
  • the airtightness of the atmospheric box 27 is detected by a helium leak check.
  • the detection means 40 has a leak check pipe 41, one end of the pipe 41 is opened in the atmospheric box 27, and the other end side is connected to the first flange 28.
  • a detector (not shown) for detecting the presence of gas (helium gas) is provided in the vacuum region in the chamber 10.
  • the film forming apparatus of the present invention is not limited to the illustrated form, and may be of other forms within the scope of the present invention.
  • the substrate W may be a single wafer instead of a strip.
  • the thin film formed on the substrate W may be other than the silicon nitride film.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Dans la présente invention, la récupération après maintenance est facilitée dans un dispositif de formation de film. Spécifiquement, l'invention concerne un dispositif de formation de film 7 qui est pourvu d'une chambre 10 pour recevoir un matériau de base ; et une unité d'électrode 20 disposée de façon détachable sur la chambre 10 et comportant des électrodes 25 pour décharge pour effectuer une formation de film avec le matériau de base dans la chambre 10. Les électrodes 25 ont des parties linéaires 31, 32 et une partie pliée 33 pour raccorder une partie linéaire 31 à l'autre partie linéaire 32. L'unité d'électrode 20 comporte en outre une boîte atmosphérique 27 pour recouvrir la partie pliée 33 et assurer l'étanchéité à l'air à l'intérieur. La boîte atmosphérique 27 est disposée à l'intérieur de la chambre 10.
PCT/JP2018/000034 2017-01-10 2018-01-04 Dispositif de formation de film Ceased WO2018131529A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-002000 2017-01-10
JP2017002000A JP2018111848A (ja) 2017-01-10 2017-01-10 成膜装置

Publications (1)

Publication Number Publication Date
WO2018131529A1 true WO2018131529A1 (fr) 2018-07-19

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PCT/JP2018/000034 Ceased WO2018131529A1 (fr) 2017-01-10 2018-01-04 Dispositif de formation de film

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WO (1) WO2018131529A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113707527A (zh) * 2020-05-21 2021-11-26 江苏鲁汶仪器有限公司 一种阻挡等离子体反流的分离式进气结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002118097A (ja) * 2000-10-10 2002-04-19 Matsushita Electric Ind Co Ltd プラズマ処理装置
WO2004064460A1 (fr) * 2003-01-16 2004-07-29 Japan Science And Technology Agency Dispositif d'alimentation electrique haute frequence et generateur de plasma
JP2006202638A (ja) * 2005-01-21 2006-08-03 Mitsui Eng & Shipbuild Co Ltd プラズマ生成装置及びプラズマ生成方法
JP2013258153A (ja) * 2008-03-05 2013-12-26 Emd:Kk 高周波アンテナユニット及びプラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002118097A (ja) * 2000-10-10 2002-04-19 Matsushita Electric Ind Co Ltd プラズマ処理装置
WO2004064460A1 (fr) * 2003-01-16 2004-07-29 Japan Science And Technology Agency Dispositif d'alimentation electrique haute frequence et generateur de plasma
JP2006202638A (ja) * 2005-01-21 2006-08-03 Mitsui Eng & Shipbuild Co Ltd プラズマ生成装置及びプラズマ生成方法
JP2013258153A (ja) * 2008-03-05 2013-12-26 Emd:Kk 高周波アンテナユニット及びプラズマ処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113707527A (zh) * 2020-05-21 2021-11-26 江苏鲁汶仪器有限公司 一种阻挡等离子体反流的分离式进气结构
CN113707527B (zh) * 2020-05-21 2022-07-29 江苏鲁汶仪器有限公司 一种阻挡等离子体反流的分离式进气结构

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