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WO2018128634A1 - Procédé, appareil et cible pour dépôt de matériau sur un substrat dans un procédé de dépôt sous vide - Google Patents

Procédé, appareil et cible pour dépôt de matériau sur un substrat dans un procédé de dépôt sous vide Download PDF

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Publication number
WO2018128634A1
WO2018128634A1 PCT/US2017/012741 US2017012741W WO2018128634A1 WO 2018128634 A1 WO2018128634 A1 WO 2018128634A1 US 2017012741 W US2017012741 W US 2017012741W WO 2018128634 A1 WO2018128634 A1 WO 2018128634A1
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WIPO (PCT)
Prior art keywords
target
gap width
temperature
sputtering
segment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/US2017/012741
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English (en)
Inventor
Aki HOSOKAWA
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Applied Materials Inc
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Applied Materials Inc
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Publication date
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Priority to PCT/US2017/012741 priority Critical patent/WO2018128634A1/fr
Priority to CN201780082885.6A priority patent/CN110312821B/zh
Publication of WO2018128634A1 publication Critical patent/WO2018128634A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Definitions

  • Embodiments of the present disclosure relate to an apparatus for material deposition on a substrate in a vacuum deposition process, a system for sputter deposition on a substrate, and a method for material deposition on a substrate in a vacuum deposition process.
  • Embodiments of the present disclosure particularly relate to sputter sources, such as sputtering cathodes or rotatable sputtering cathodes.
  • Techniques for layer deposition on a substrate include, for example, sputter deposition, thermal evaporation, and chemical vapor deposition (CVD).
  • a sputter deposition process can be used to deposit a material layer on the substrate, such as a layer of a conducting or an insulating material.
  • a target having a target material to be deposited on the substrate is bombarded with ions generated in a plasma region to dislodge atoms of the target materi al from a surface of the target. The dislodged atoms can form the material layer on the substrate.
  • Coated substrates can be used, for example, in semiconductor devices and thin film batteries.
  • substrates for displays can be coated using sputter deposition.
  • Further applications include insulating panels, organic light emitting diode (OLED) panels, substrates with TFT, color filters or the like.
  • thin film batteries such as lithium-ion batteries, are used in a growing number of applications, such as cell phones, notebooks and implantable medical devices.
  • targets For material deposition e.g. on large area substrates, large targets are beneficial .
  • targets such as ceramic targets, Indium Tin Oxide ( ⁇ ) targets, and Indium Gallium.
  • Zinc Oxide (IGZO) targets larger in size. Due to manufacturing difficulty, there is a limitation of target size, for example ceramic target size.
  • targets, such as ceramic targets can be designed segmented. A segmented design may result in gaps between segments.
  • the target can be provided with a segmented design, i .e. several segments of the target material can be fixed on a target support, for example, using a bonding material.
  • the bonding material can leak from the interface or joint between neighboring segments, e.g., when temperature changes occur, leading to the occurrence of arcing.
  • a method for material deposition on a substrate in a vacuum deposition process having a sputtering target includes providing a target temperature of the sputtering target during operation to be within a desired target temperature range for adjusting a gap width of a gap of two adjacent target segments of the sputtering target.
  • a sputtering target for material deposition on a substrate in a vacuum deposition process includes three or more target segments, wherein a first target segment of the three or more target segments has a first segment length and a second target segment of the three or more target segments has a second segment length, wherein the second segment length is larger than the first segment length, and wherein a third target segment is provided having a third segment length larger than the first segment length, and a first gap width of a first gap between the first target segment and the second target segment and a second gap width of a second gap between the second target segment and a third target segment, wherein the first gap width is smaller than the second gap width, particularly at a first temperature lower than an operating temperature.
  • an apparatus for material deposition on a substrate in a vacuum deposition process includes a vacuum chamber configured for housing one or more sputtering cathodes, a determining unit configured to determine a gap width of a gap of two adjacent target segments of the one or more sputtering cathodes during operation, and a control unit, wherein the control unit is configured to adjust a parameter adapted to change a temperature of a sputtering target.
  • Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. The methods for operating the described apparatus include methods aspects for carrying out every function of the apparatus.
  • Fig. 1 schematically shows a sputtering cathode and a sputtering target according to embodiments described herein;
  • Fig. 2 schematically shows a section of another sputtering cathode and another sputtering target having two or more target segments and one or more gap widths between adjacent target segments according to embodiments described herein;
  • FIG. 3 A, 3B, and 3C schematically show- a partial view? of a section of another sputtering cathode and another sputtering target having two or more target segments and one or more gap widths between adjacent target segments according to embodiments described herein;
  • Fig. 4 shows a graph illustrating the effect of temperature changes on a target gap width
  • Fig. 5 shows a flow chart of a method of sputtering target gap width adjustment according to embodiments described herein;
  • Fig. 6 shows another flow chart of a method of sputtering target gap width adjustment by providing a predetermined speed of rotation according to embodiments described herein;
  • Fig. 7 shows another flow chart of a method of sputtering target gap width adjustment by adjusting a cooling element according to embodiments described herein;
  • Fig. 8 shows another flow chart of a method of sputtering target gap width adjustment and gap width control according to embodiments described herein;
  • Fig. 9 shows schematically a deposition apparatus according to embodiments described herein;
  • Fig. 10 shows schematically another deposition apparatus according to embodiments described herein.
  • Fie. 1 1 shows schematically a cross sectional view of another
  • Embodiments of the present disclosure generally refer to a method for a segmented sputtering target in a vacuum material deposition process.
  • Embodiments of the present disclosure adjust the gap width of a gap of two adjacent targeted segments, i.e. a gap between adjacent target segments, during operation of the material deposition process by providing a desired target temperature. Accordingly, the gap width is adjusted by providing a target temperature within a desired target temperature range. For example, adjusting the gap width may result in an adjusted gap width.
  • the adjusted gap width can be 0.1 mm or below.
  • the embodiments described herein can be utilized for sputter deposition on large area substrates, e.g., for lithium battery manufacturing, electrochromic windows and/or display manufacturing.
  • Embodiments described herein may particularly relate to display manufacture on large area substrates.
  • large area substrates or carriers supporting one or more substrates i .e. large area carriers, may have a size of at least 0.174 m 2 .
  • the size of the carrier can be about 1.4 m to about 8 m 2 , more typically about 2 m to about 9 m 2 or even up to 12 m 2 .
  • the rectangular area in which the substrates are supported, for which methods, apparatuses, and targets according to embodiments described herein are provided are carriers having sizes for large area substrates as described herein.
  • a large area carrier which would correspond to an area of a single large area substrate, can be GEN 5, which corresponds to about 1.4 m 2 substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m 2 substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m 2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m" substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.
  • FIG. 1 shows a sputtering cathode 100 having a sputtering target 120.
  • FIG. l shows a backing tube 110.
  • the sputtering target 120 may be for example a ceramic target, such as an Indium Tin Oxide ( ⁇ ) target or an Indium Gallium Zinc Oxide (IGZO) target.
  • Target segments 122 of the sputtering target 120 are coupled to the backing tube, i.e. a backing portion of the sputtering cathode 100. Coupling of the target segments to the backing portion may be performed by different methods, i.e. bonding or soldering with a material.
  • the target segments and the backing portion e.g.
  • the backing tube are coupled by a bonding material 130 or a soldering material.
  • the bonding material may be for example an indium based alloy. Coupling may also be performed by methods generally described as welding, i .e. diffusion bonding.
  • non-bonded targets can be provided, wherein for example a backing tube supports the target without a bonding material.
  • the sputtering cathode may further include a flange portion 140 provided at an end of the backing tube.
  • the flange portion can be utilized to mount the sputtering cathode in a deposition apparatus.
  • the flange portion may also be referred to as a mounting portion .
  • one flange portion can be provided.
  • a sputtering target mounted with one flange portion is provided in a cantilever state.
  • flange portions can be provided at two ends of the backing tube.
  • the gap width of the gap may be too large which leads to deposition of target material into the gap or leads to generation of particles at the gap. Consequently, the quality of the deposition process is reduced. Furthermore, target segments can expand or contract due to temperature changes. A too narrow gap width may lead to a contact of adjacent target segments, which can cause damage to the sputtering target. Therefore, the gap width has to be in a certain range to avoid the above mentioned effects. With current manufacturing technology, the accuracy of the gap width control is not precise enough. If the gap width is not controlled precisely enough, unwanted re-deposition may go into the gap and/or particles may be generated.
  • a gap width of 0.1 mm or below may be provided.
  • a gap width may be larger than zero.
  • Target gap width can be controlled during sputtering at operating temperature, for example at an operating temperature of around 120°C. Precise gap width control may be considered beneficial to avoid the above mentioned particle generation and/or re-deposition and/or the above mentioned damaging of the target or damage to the target.
  • a method for a sputtering cathode for a material deposition apparatus includes providing a target temperature of the sputtering target during operation to be within a desired target temperature range for adjusting a gap width of a gap of two adjacent target segments of the sputtering target, i.e. a gap between adjacent target segments.
  • Figs. 3A, 3B, and 3C show a schematic cross-sectional view of a section of a sputtering target having a target segment 122 and a gap between two adjacent target segments 122.
  • Fig. 3 A depicts a gap width 312 of a gap 310, wherein said gap width is the gap width at a defined temperature of the sputtering target, for example room temperature.
  • the gap width at the defined temperature of the sputtering target for example room temperature
  • the gap width at the defined temperature of the sputtering target, for example room temperature can be above 0.1 mm .
  • the gap width 312, at for example, room temperature may be therefore above 0.1 mm.
  • a desired temperature range e.g. possible operating temperatures, can be the temperature range in which the gap width is larger than zero and equal or smaller than 0.1 mm
  • the inventors have found that it is possible to adjust the gap width by providing an operation temperature in a predetermined temperature range.
  • the predetermined temperature range can be defined by the gap width 312 at, for example, room temperature.
  • the target segments 122 of the sputtering target 120 expand due to thermal expansion.
  • FIG. 3B exemplarily illustrates the effect on the gap width 314 due to a change of the temperature of the sputtering target.
  • a cost efficient and/or accessible way to change the temperature of the sputtering target is to change the speed of rotation of a rotary sputtering target. The method of gap width adjustment by changing the speed of rotation will be described in more detail below.
  • FIG. 3B shows a sputtering target 120 that is not bonded to the backing tube 110.
  • the temperature of the sputtering target 120 is higher than the temperature of the sputtering target of FIG. 3A.
  • Hie segment length of the target segments 122 is expanded due to the free expansion of the target segments.
  • the target segment has expanded in longitudinal direction towards the gap 310. Due to the expansion, the gap width 314 of the gap between two adjacent target segments 122 is smaller than the gap width 312 shown in FIG. 3A.
  • the temperature of the target segment 122 may be higher near the exposed surface 320 than the temperature near the backing tube 110.
  • the target segment 122 may therefore expand differently in the longitudinal direction at different target heights.
  • FIG. 3B shows a gap tapered in the radial direction due to unequal expansion.
  • FIG. 3C shows a sputtering target 120 bonded to the backing tube 1 10 by a material 130.
  • the material 130 may restrict the expansion of the target segments 122 in longitudinal direction towards the gap 310.
  • the expansion at a defined temperature is therefore smaller than the expansion of a target segment 122 that is not bonded to the backing tube 1 10.
  • Due to the expansion, the gap width 316 of the gap of two adjacent target segments 122 is smaller than the gap width 312 shown in FIG. 3A.
  • the temperature of the target segment 122 may be larger near the exposed surface 320 than the temperature near the backing tube 110.
  • the target segment 122 may therefore expand differently in the longitudinal direction at different target heights.
  • the segment length of a target segment 122 is 100 mm or above.
  • a target segment may have a segment length from 150 mm to 1500 mm. More particularly, a target segment may have a segment length from 300 mm to 900 mm, such as for example about 450 mm.
  • a gap width within a desired range is provided by utilizing the thermal expansion during operation of the sputtering target 120.
  • Adjacent target segments 122 expand due to thermal expansion. Expansion of the adjacent target segments 122 leads to a narrower gap.
  • the gap width of a gap 1 80 of adjacent target segments 122 can be controlled by determining a desired target temperature range. The thermal expansion depends on the segment length 124. With an increasing segment length 124, the expansion of the target segment increases.
  • a target segment may have a certain segment length at a temperature Ti .
  • T 2 > Tj the target segment has a larger segment length.
  • the gap width at T 2 is smaller than the gap width at Ti due to the increased segment length at T 2 .
  • a desired target temperature T D may be determined by the formula as follows:
  • a predetermined gap width W 0 is defined by the temperature To. To may be for example a temperature at room temperature.
  • the gap width Wo is the width of the gap of two adjacent target segments with one target segment having the segment length Li and the other one having the segment length L 2 .
  • WD is the desired gap width, particularly, a gap width of 0.1 mm or below.
  • the material of the sputtering target has a coefficient of thermal expansion a.
  • a parameter ⁇ is included. The value of the parameter may vary from above 0 to 1 , for example the parameter may be about 0.5.
  • the parameter o may further consist of two or more sub-para neters.
  • the parameter may consist of two sub-parameters oi and ⁇ 2 , wherein the first sub-pararneter may be fractional expansion of a target segment towards the gap in the longitudinal direction, which may be about 0.5, the second sub-parameter may be a restriction coefficient due to restricted expansion of a bonded target segment.
  • This restriction coefficient which can be considered a bonding parameter and which may, for example, be due to a bonding material constraint, can have a value of 0.5 to 0.8.
  • Fig. 5 shows a flow chart of a method according to embodiments described herein.
  • a method for material deposition on the substrate in a vacuum deposition process having a sputtering target includes providing a target temperature of the sputtering target during operation.
  • the target temperature during operation is provided within a desired temperature range for adjusting the gap width, for example a gap width between two adjacent target segments of the sputtering target.
  • the gap width at, for example, room temperature between target segments of a target is known or can be determined.
  • the gap width at, for example, room temperature, i.e. a temperature before operation, which may have a difference in gap width when compared to a desired gap width, can be determined. Accordingly, a predetermined temperature window or temperature range, in which the gap width during operation is within a desired gap width range, can be determined .
  • the manufacturing parameters can be chosen to have the desired temperature range and, thus, the desired gap width range.
  • FIG. 1 shows a sputtering cathode 100 having a rotary sputtering target 120.
  • An inner diameter 190 defines an inner space 160 of the sputtering cathode.
  • the sputtering cathode 100 can comprise a magnet assembly (1120 in FIG. 11) placed inside the inner space 160.
  • the magnet assembly is a magnet assembly for magnetron sputtering. Sputtering heats up the surface from which the sputtering material is released. In magnetron sputtering, the plasma is trapped within a magnetic field near the target area.
  • the sputtering target 120 and the backing tube 1 10 have an axis of rotation .
  • the sputtering target 120 and backing tube 110 may rotate together around the magnet assembly. It has to be understood that a rotation of the sputtering target 120 implies a rotation of the backing tube 110. For reasons of simplicity, only the rotation of the sputtering target is explicitly stated in the following section.
  • the desired target temperature range is provided by a speed of rotation of a sputtering target.
  • the surface of the sputtering target is moved with respect to the magnetic field.
  • the speed of rotation determines the time a particular fraction of the total surface area is within the magnetic field with the trapped plasma heating up the particular fraction.
  • Fig. 6 shows a flow chart of a method of sputtering target gap width adjustment.
  • the temperature of the sputtering target is provided (box 510).
  • the gap width of two adjacent target segments is adjusted (box 520).
  • the gap width is adjusted to be within a desired gap width range during operation. If the gap during sputtering is not in the gap width range of 0.1 mm or below, the target rotation speed can be adjusted so that the target gap shall be within the desired gap width range.
  • This speed of rotation is typically 20 rpm or below. More typically, the speed of rotation is from 0.5 rpm to 12 rpm, such as, for example, 10 rpm.
  • a heat load for the sputtering target can significantly increase at very low RPM.
  • adjacent target segments have a preset gap width, i.e. a manufactured gap width.
  • the gap width may vary, for example, between used manufacturing methods, different target materials or between production batches.
  • the pre-set gap width can be measured and may even be a property of the target upon sale of the target.
  • the gap width varies when the sputtering targets are operated at a fixed temperature of operation.
  • the gap width can be adjusted by providing a speed of rotation, wherein the speed of rotation provides a target temperature within a desired target temperature range.
  • the target temperature to be within a desired target temperature range can be determined by embodiments of the method described herein.
  • FIG. 4 shows a graph illustrating the effect of temperature changes on a target gap width.
  • the graph 430 shows the gap width of two adjacent target segments in dependency of the target temperature.
  • the scale of the temperature axis starts at the lowest temperature To.
  • To is a temperature at room temperature.
  • Sputtering targets can be operated up to a maximal temperature T max . Exceeding this value may lead to cracking of the target material, for example at a temperature above 200°C.
  • the gap width is within a preferred gap width range 460.
  • the target temperature during operation of the sputtering target is typically from 75°C to 200°C, particularly from 100°C to 175°C, for example up to about 165°C.
  • the target temperature may be, for example, the temperature at the surface of the target.
  • the gap width at the temperature T 0 is smaller compared to graph 430.
  • the slopes of the graphs are different.
  • a graph starting at a large gap width at T 0 may for example have an increased slope compared to a graph starting at a smaller gap width at T 0 .
  • the slope may depend on the segment length and/or target material and/or other parameters associated to the adjacent target segments, or a bonding parameter.
  • graph 430 starts with a larger gap width at TO than graph 410 at To.
  • the slope of graph 430 is greater than the slope of graph 410, Consequently, there is an intercept of graph 430 and graph 410 at a temperature point at which both graphs have the same gap width. Said temperature point is preferably within the desired target temperature range 450.
  • the different gap widths represented by graphs 410, 420, and 430 are at the desired target temperature range 450 within the preferred gap width range 460.
  • a sputtering target may have two or more gap widths.
  • Fig 2 shows schematically a cross-sectional view of a section of a sputtering cathode 100.
  • the adjacent target segments 210, 220, of the sputtering target have different segment lengths. Segment lengths may not be consistent between manufacturers depending on their manufacturing capabilities. Different gap width control may be performed per segment length. For example, the segment length 222 is smaller than the segment length 212.
  • the gap width is adjusted by utilizing the thermal expansion of adjacent target segments. According to some embodiments, which can be combined with other embodiments described herein, at an initial temperature To. the gap width 240 can be smaller than the gap width 250.
  • the gap widths 240 and 250 can be adjusted. As the target segments have different segment lengths, there is a temperature point at which both gap widths 240, 250 have the same gap width. Preferably, the gap widths 240 and 250 may be equal or within an equal gap width range in a desired target temperature range.
  • a sputtering target for material deposition on the substrate in a vacuum deposition process can be provided.
  • the sputtering target can include three or more target segments, wherein a first target segment of the three or more target segments has a first length and a second target segment of the three or more target segments has a second length, which is larger than the first lengths.
  • a third target segment of the three or more target segments may have a length similar to the second length.
  • a first gap width between the first target segment and the second target segment can be smaller when compared to a second gap width between the second target segment and the third target segment, for example at room temperature or at another temperature lower than the temperature during operation.
  • the first gap width will decrease with a smaller slope (see FIG. 4) as compared to the second gap width.
  • a temperature increase during operation enables to provide for a similar first gap width as compared to the second gap width during operation.
  • the first gap width and the second gap width can be similar within the desired temperature range of methods according to embodiments described herein.
  • this desire temperature range is the temperature range in which both gap widths, the first gap width and the second gap width, are larger than zero and equal or smaller than 0.1 mm.
  • the sputtering cathode may further comprise a cooling element or an internal cooling passage for cooling the magnet assembly and/or for cooling the sputtering target.
  • FIG. 7 shows a flow chart of another method to adjust the gap width, in which the target temperature is provided by adjusting a cooling element (box 710). Cooling may be performed by a fluid coolant, such as water. Adjusting the flow rate of the coolant or a temperature of the coolant can provide adjustment of a cooling, i.e. a cooling of the cooling element.
  • Fig. 11 schematically shows a cross-sectional view of a sputtering cathode 100.
  • the sputtering cathode comprises a cooling channel 1030 and a magnet assembly 1120.
  • the cooling channel 1030 is typically connected to a cooling unit 1020.
  • the cooling source may introduce the coolant into the cooling channel 1030 from one end of the sputtering target.
  • the coolant flows in an opposite direction within the target, i.e. the backing tube, and cools the magnet assembly 1120 and the backing tube with a target, respectively.
  • Heat can be transferred from the magnet assembly and/or backing tube to the coolant by pumping the coolant through the cooling channel 1030 and the backing tube, respectively, with the coolant having a flow rate.
  • the flow rate may, for example, be 15 1/min to 25 l/mm. e.g. around 20 l/'min.
  • the amount of heat transferred away from the sputtering target to the coolant can be regulated.
  • the temperature of the sputtering cathode having the sputtering target can be increased.
  • FIG. 9 shows schematically a deposition apparatus 900 in a vacuum chamber 920 according to embodiments described herein.
  • This apparatus has a sputtering cathode 100 comprising a sputtering target 120.
  • the sputtering target 120 may be rotatable around an axis 1 0. This rotation can be performed by a motor unit 940.
  • a motor control unit 950 can be provided to control the motor unit 940.
  • the motor control unit 950 can act as or can be in communication with a control unit for the methods provided herein.
  • the control unit can be provided for adjusting the temperature during operation to be within a desire temperature range.
  • the control unit may control the motor control unit and the speed of rotation of the sputtering target.
  • the motor control unit 950 is adapted to provide a predetermined speed of rotation of the sputtering target 120.
  • the motor control unit 950 can set a speed of rotation of the sputtering target 120 as a value of 20 rpm or below.
  • Reference numeral 960 illustratively shows the sputtered material to be deposited on a substrate.
  • a substrate may be positioned on a substrate support 930.
  • the substrate may be provided in a carrier and the earner is provided on a substrate support within the vacuum chamber 920.
  • the gap width may also be determined during operation of the material deposition process.
  • FIG. 8 shows a flow chart of a method of target gap width control.
  • the gap width of a gap of two adjacent target segments is adjusted by providing a target temperature (box 5 0, box 520).
  • the gap width of the adjusted gap is determined. Determining the actual gap width during operation may comprise a measuring procedure. If the determined gap width is not within a preferred gap width range, a re-adjustment (box 820) of the gap width can be provided by providing a new target temperature to re-adjust the gap width. For example, a re-adjustment of the temperature may be provided by varying the rotation speed of the target and/or varying the flow rate or the temperature of the coolant.
  • the methods described herein may be embodied in a computer readable medium
  • the computer readable medium has instructions stored thereon that, when executed, cause apparatus for material deposition to perform a method material deposition on a substrate in a vacuum deposition process in accordance with any of the methods described herein.
  • FIG. 10 shows a deposition apparatus 1000 comprising a determining unit 1010.
  • the determining unit 1010 may be a device for measuring the gap width, for example an optical measurement tool.
  • the actual gap width during operation is detected by the determining unit and a signal containing the information of the gap width is passed to a control unit 1040.
  • the control unit 1040 determines whether the gap width has to be adjusted.
  • the control unit 1040 may control the speed of rotation of the motor unit 940. Additionally or aiteraatively, the control unit may control the cooling unit 1020, for example the flow rate of a coolant through the cooling channel 1030.
  • the cooling element can be an adjustable cooling element. If the actual gap width is not in the desired gap width range, the control unit can adj st the target temperature by re-adjusting the motor unit 940 and/or the cooling unit 1020 during operation of the material deposition process.
  • the method for material deposition on a substrate in a vacuum deposition process having a sputtering target can be conducted by computer programs, software, computer software products and the interrelated controllers, which can have a CPU, a memory, a user interface, and input and output devices being in communication with the corresponding components of the apparatus for material deposition on a substrate.
  • the interrelated controllers which can have a CPU, a memory, a user interface, and input and output devices being in communication with the corresponding components of the apparatus for material deposition on a substrate.

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  • Chemical Kinetics & Catalysis (AREA)
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  • Mechanical Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
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Abstract

La présente invention concerne un procédé de dépôt de matériau sur un substrat dans un procédé de dépôt sous vide ayant une cible de pulvérisation. Le procédé comprend l'obtention, pendant le fonctionnement, d'une température cible de la cible de pulvérisation, dans une plage souhaitée de températures cible, pour ajuster une largeur d'espacement d'un espacement de deux segments cibles adjacents de la cible de pulvérisation.
PCT/US2017/012741 2017-01-09 2017-01-09 Procédé, appareil et cible pour dépôt de matériau sur un substrat dans un procédé de dépôt sous vide Ceased WO2018128634A1 (fr)

Priority Applications (2)

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PCT/US2017/012741 WO2018128634A1 (fr) 2017-01-09 2017-01-09 Procédé, appareil et cible pour dépôt de matériau sur un substrat dans un procédé de dépôt sous vide
CN201780082885.6A CN110312821B (zh) 2017-01-09 2017-01-09 用于在真空沉积工艺中在基板上沉积材料的方法、设备和靶材

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PCT/US2017/012741 WO2018128634A1 (fr) 2017-01-09 2017-01-09 Procédé, appareil et cible pour dépôt de matériau sur un substrat dans un procédé de dépôt sous vide

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US20060032737A1 (en) * 2004-08-10 2006-02-16 Applied Films Gmbh & Co. Kg Magnetron sputtering device, a cylindrical cathode and a method of coating thin multicomponent films on a substrate
WO2013094973A1 (fr) * 2011-12-19 2013-06-27 주식회사 나노신소재 Procédé de fabrication d'une cible de pulvérisation cylindrique
US20140124365A1 (en) * 2011-04-29 2014-05-08 Dieter Wurczinger Method of forming a cylindrical sputter target assembly
US20150021166A1 (en) * 2011-08-25 2015-01-22 Applied Materials, Inc. Sputtering apparatus and method
DE102014102877A1 (de) * 2014-03-05 2015-09-10 Von Ardenne Gmbh Verfahren zum Einrichten einer Magnetanordnung eines Magnetrons
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JP4318439B2 (ja) * 2002-08-26 2009-08-26 三井金属鉱業株式会社 スパッタリングターゲットおよびその製造方法
PT1752556E (pt) * 2005-08-02 2008-01-22 Applied Materials Gmbh & Co Kg Cátodo tubular para aplicação em processo de pulverização catódica
JP5194460B2 (ja) * 2007-01-26 2013-05-08 東ソー株式会社 円筒形スパッタリングターゲット及びその製造方法
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US20060032737A1 (en) * 2004-08-10 2006-02-16 Applied Films Gmbh & Co. Kg Magnetron sputtering device, a cylindrical cathode and a method of coating thin multicomponent films on a substrate
US20140124365A1 (en) * 2011-04-29 2014-05-08 Dieter Wurczinger Method of forming a cylindrical sputter target assembly
US20150021166A1 (en) * 2011-08-25 2015-01-22 Applied Materials, Inc. Sputtering apparatus and method
WO2013094973A1 (fr) * 2011-12-19 2013-06-27 주식회사 나노신소재 Procédé de fabrication d'une cible de pulvérisation cylindrique
US20150279636A1 (en) * 2012-10-09 2015-10-01 Applied Materials, Inc. Particle free rotary target and method of manufacturing thereof
DE102014102877A1 (de) * 2014-03-05 2015-09-10 Von Ardenne Gmbh Verfahren zum Einrichten einer Magnetanordnung eines Magnetrons

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CN110312821A (zh) 2019-10-08

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