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WO2018119685A1 - Procédé de formation d'une cellule solaire à couches minces cdte comprenant une étape de dopage métallique et système de réalisation de ladite étape de dopage métallique - Google Patents

Procédé de formation d'une cellule solaire à couches minces cdte comprenant une étape de dopage métallique et système de réalisation de ladite étape de dopage métallique Download PDF

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Publication number
WO2018119685A1
WO2018119685A1 PCT/CN2016/112433 CN2016112433W WO2018119685A1 WO 2018119685 A1 WO2018119685 A1 WO 2018119685A1 CN 2016112433 W CN2016112433 W CN 2016112433W WO 2018119685 A1 WO2018119685 A1 WO 2018119685A1
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WIPO (PCT)
Prior art keywords
solar cell
semi
cdte solar
finished
finished cdte
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2016/112433
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English (en)
Inventor
Drost CHRISTIAN
Spath BETTINA
Frauenstein SVEN
Harr MICHAEL
Peng SHOU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
China Triumph International Engineering Co Ltd
CTF Solar GmbH
Original Assignee
China Triumph International Engineering Co Ltd
CTF Solar GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by China Triumph International Engineering Co Ltd, CTF Solar GmbH filed Critical China Triumph International Engineering Co Ltd
Priority to CN201680074171.6A priority Critical patent/CN108604502B/zh
Priority to DE112016006558.2T priority patent/DE112016006558T5/de
Priority to PCT/CN2016/112433 priority patent/WO2018119685A1/fr
Publication of WO2018119685A1 publication Critical patent/WO2018119685A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Definitions

  • the present application relates to a method of producing a CdTe solar cell including a metal doping step and asystem for performing said metal doping step.
  • a CdTe solar cell has the following structure: on a glass substrate, a transparent conducting oxide layer (TCO) is deposited as a front contact.
  • the TCO layer can include a high resistive buffer layer which helps to minimise the shunting effect in solar cell.
  • a layer of cadmium sulfide (CdS) and on top of that, a layer of cadmium telluride (CdTe) are deposited.
  • a metal layer e.g. of molybdenum, nickel vanadium, tantalum, titanium, wolfram, gold or any composition or compound comprising one of these elements, is applied to collect the charge carriers. This process is called superstrate configuration.
  • copper may be introduced into the CdTe layer at the interface to the metal layer.
  • the copper may be provided to the CdTe layer as an elemental layer comprising only copper or as a dopant contained in another material or as an ion or as a part of a chemical compound.
  • the copper may be applied on the CdTe layer, for instance, from a gas, e.g. by sputtering, or from an aqueous solution, e.g. of copper chloride or a copper salt.
  • a temperature treatment may be performed after applying copper on the CdTe layer.
  • any process for introducing copper into the CdTe layer is called a copper doping step.
  • the object of the present invention is to provide a method for forming a CdTe thin film cell including a metal doping step, wherein this method provides improved control of the amount and location of metal ions introduced by the metal doping step within the CdTe layer.
  • a further object is to provide asystem which is suited for performing this method.
  • the method according to the present application comprises the steps of providing a semi-finished CdTe solar cell, applying an aqueous solution comprising metalions or metalcontaining ionson a back surface of the semi-finished CdTe solar cell, removing the aqueous solution from the back surface of the semi-finished CdTe solar cell, and applying a metal layer on a first surface of the semi-finished CdTe solar cell in order to form a back contact.
  • the semi-finished CdTe solar cell includes at least a transparent substrate, a front contact layer, a CdS layer and a CdTe layer, wherein a surface of the CdTe layer opposite to the transparent substrate forms the first surface of the semi-finished CdTe solar cell.
  • the back surface, onto which the aqueous solution is applied, is either the first surface of the semi-finished CdTe solar cell or a first surface of the metal layer which is opposite to the transparent substrate.
  • the semi-finished CdTe solar cell may comprise further layers in between the mentioned layers, and one or more layers, for instance the front contact layer, may also be formed as a layer sequence as known from the prior art.
  • the front contact layer is usually transparent and often realized by a transparent conductive oxide (TCO) .
  • TCO transparent conductive oxide
  • the CdS layer, the CdTe layerand the front contact layer or layer sequence are formed by methods known from the prior art.
  • the aqueous solution may be applied on the back surface of the semi-finished CdTe solar cell byprocesses known from the prior art such as, but not limited to:
  • the aqueous solution may be a solution of a metal salt, for instance CuCl 2 , CuSO 4 , Cu (NO 3 ) 2 , SbCl 3 , AsCl 3 , AgCl or of any other compound comprising metal containing complexes.
  • the metal is present in form of metal ions or bounded in electrically charged complexes, i.e. in metal containing ions.
  • the aqueous solution contains the metal in a concentration in the range between 0.05 mmol/l and 10 mmol/l.
  • ions of a metal for instance of copper (Cu) , antimony (Sb) , silver (Ag) or arsenic (As) , are introduced into the CdTe layer, or in other words: the CdTe layer is doped with metal ions.
  • the aqueous solution may be removed from the back surface of the semi-finished CdTe solar cell by removing the semi-finished CdTe solar cell from the aqueous solution held in a container and/or by blowing, rinsing with a cleaning solution, drying or a combination thereof, or by other processes known from the prior art.
  • the step of applying a metal layer on the first surface of the semi-finished CdTe solar cell is known from the prior art and may comprise depositing a layer of molybdenum, nickel vanadium, gold, tantalum, tungsten, alloys of molybdenum, tantalum, titanium and tungsten, compounds comprising molybdenum or tungsten or other materials or depositing combinations or layer sequences of different of these materials using sputtering, evaporation/sublimation or chemical vapor deposition or any other suitable deposition technique.
  • the step of applying a metal layer may also include forming an additional layer of a further material, like ZnTe, Cu 2 O, Cu 2 Te, CuTe or other metal-telluride-compounds, between the first surface of the semi-finished CdTe solar cell and the metal layer, as it is also known from the prior art.
  • a further material like ZnTe, Cu 2 O, Cu 2 Te, CuTe or other metal-telluride-compounds
  • the semi-finished CdTe solar cell is additionally illuminated and/or an electrical power is applied to the semi-finished CdTe solar cell by electrically conductive connecting it to an electrical power supply.
  • an additional electric field is formed across the semi-finished CdTe solar cell.
  • This step of additionally illuminating and/or applying an electrical power may be performed for a first time period of the time while the aqueous solution is present on the back surface of the semi-finished CdTe solar celland/or for a second time period after performing the step of removing the aqueous solution from the back surface of the semi-finished CdTe solar cell and prior to performing the step of applying a metal layer on the first surface.
  • the first time period may be the whole time between the beginning of the step of applying an aqueous solution and of the end of the step of removing the aqueous solution, i.e. the whole time the aqueous solution is at least partially present at the back surface of the semi-finished CdTe solar cell, or only a part of this time duration.
  • the second time period may be the whole time between the end of the step of removing the aqueous solution and the beginning of the step of applying a metal layer, i.e. the whole time between these two steps, or only a part of this time duration.
  • the fourth case is a combination of the first case and the third case.
  • the back surface of the semi-finished CdTe solar cell, onto which the aqueous solution is applied is formed by a surface of the CdTe layer being the first surface of the semi-finished CdTe solar cell.
  • the back surface of the semi-finished CdTe solar cell, onto which the aqueous solution is applied is formed by the first surface of the metal layer.
  • the additional electric field across the semi-finished CdTe solar cell formed by additional illumination or by the supplied electrical power superimposes the inherent electric field formed by the pn-junction between the CdS layer and the CdTe layer. “Superimpose” means that the additional electric field either intensifies or opposes the inherent electric field. In case of additional illumination or of contacting the front contact layer with a negative pole of the power supply, more metal ions or positively charged metal containing complexes migrate in the direction to the CdS layer within the CdTe layer than without the additional illumination or the external electric power supply.
  • the migration of metal ions or positively charged metal containing complexes in the direction of the CdS layer within the CdTe layer is reduced as compared to the case without the external electric power supply.
  • the amount and location of metal ionsintroduced by a metal doping step within the CdTe layer may be controlled more precisely as compared to a prior art copper treatment step where only control of the copper concentration in the aqueous solution or the time duration of the copper treatment step may be influenced.
  • the metal doping step comprises the following three sub-steps: applying an aqueous solution comprising metal ionsor metalcontaining ions to the back surface of the semi-finished CdTe solar cell, removing the aqueous solution from the back surface of the semi-finished CdTe solar cell and, for a first time period or for a second time period, additionally illuminating and/or electrically connecting the semi-finished CdTe solar cell to an electrical power supply, wherein each sub-step is performed at a defined place within the whole process flow, respectively.
  • Additional illumination means an illumination which is more than the illumination due to light being present during the copper treatment step of the prior art. In the prior art, this step is usuallynot performed in a dark room, but under normal production conditions including usual lighting conditions.
  • the “additional illumination” is provided additionally to these lighting conditions by a special illuminating unit and provides an additional light with an illuminance in the range of 5000 to 200000 lx.
  • the light the semi-finished CdTe solar cell is additionally illuminated with has a wavelength in the absorption region of the CdTe solar cell, and preferably in the range between 300 to 900 nm.
  • the semi-finished CdTe solar cell is electrically conductive connected to an electrical power supply
  • the electrical power supply provides an additional electric field across the semi-finished CdTe solar cell.
  • the additional electric field may be provided between the aqueous solution and the front contact layerof the semi-finished CdTe solar cell, or between earth and the front contact layer in case that the aqueous solution is not present on the back surface of the semi-finished CdTe solar cell.
  • the front contact layerof the semi-finished CdTe solar cell may be electrically conductive connected with a first contact of the electrical power supply and the aqueous solution may be electrically connected with a second contact of the electrical power supply.
  • the electrical current may be positive or negative as compared to the short circuit current.
  • Only one of the measures, additional illumination and electrical power supply, may be performed as the only measure, or both measures may be performed separately one after another in any order or simultaneously. If both measures are performed, the luminous exposure, i.e. the amount of energy, of the additional illumination and/or the electrical power may be reduced as compared to the case, when only one measure is performed.
  • the first time period or the second time period, in which one or both of the measures is performed preferably lie in the range between 5s (seconds) to 30 min (minutes) .
  • the duration of the first time period or of the second time period depends on the luminance and/or the electrical power, respectively, the metal concentration within the aqueous solution and the desired distribution of the metal within the semi-finished CdTe solar cell.
  • the temperature of the semi-finished CdTe solar cell is controlled to be in the range between 25°C and 80°C during the first time period, i.e. while one or both of the mentioned measures are performed and the aqueous solution is present on the back surface.
  • the temperature of the semi-finished CdTe solar cell is controlled to be in the range between 25°C and 225°C during the second time period.
  • the temperature of the semi-finished CdTe solar cell is a further parameter for controlling the distribution of the introduced metal within the semi-finished CdTe solar cell.
  • the semi-finished CdTe solar cell may be heated or cooled or successively heated and cooled in any order during the first time period or the second time period.
  • the method according to the present application may comprise further steps, like a temperature treatment step or a conditioning step including illumination and/or providing electrical power to the CdTe solar cell or a combination of these steps.
  • these steps which are known from the prior art, are performed at least after the step of applying a metal layer on the first surface of the semi-finished CdTe solar cell in order to form a back contactand without the presence of the aqueous solution.
  • asystem for performing a metal doping step of a semi-finished CdTe solar cell comprises a first unit for applying an aqueous solution comprising metalions or metalcontaining ions to abacksurface of a semi-finished CdTe solar cell, a second unit for removing the aqueous solution from the back surface of the semi-finished CdTe solar cell, and an illuminating unit.
  • the semi-finished CdTe solar cell includes at least a transparent substrate, a front contact layer, a CdS layer and a CdTe layer, wherein the back surface of the semi-finished CdTe solar cell is a surface of the semi-finishedCdTesolar cellopposite to the transparentlayer.
  • the semi-finished CdTe solar cell may comprise a transparent substrate, a front contact layer, a CdS layer and a CdTe layer, wherein the back surface is formed by a surface of the CdTe layer, or the semi-finished CdTe solar cell may comprise a transparent substrate, a front contact layer, a CdS layer, a CdTe layerand a metal layer, wherein the back surface is formed by a surface of the metal layer.
  • the illuminating unit is suited for additionally illuminating the semi-finished CdTe solar cell for a first time period while the aqueous solution is present at the back surface of the semi-finished CdTe solar cell.
  • the illuminating unit may be combined with the first unit and/or the second unit such that all combinedunits perform their function at least for a part of its respective process time simultaneously.
  • the first unit comprises a container holding the aqueous solution and a component for dipping the semi-finished CdTe solar cell into the aqueous solution
  • the illuminating unit may be arranged such that the light produced by it illuminates the semi-finished CdTe solar cell at least a part of the time, in whichthe semi-finished CdTe solar cell is dipped into the aqueous solution. It is nevertheless possible that the first unit and the illuminating unitor the second unit and the illuminating unitperform their functions successively although they are combined.
  • “Combination of the first unit and/or the second unit and the illuminating unit” means that a process range of the illuminating unit at least partially overlaps with the first unit and/or with the second unit. “Process range” means the spatial range in which the light produced by the illuminating unit affects the semi-finished CdTe solar cell.
  • the first unit and the illuminating unit are arranged in one unit.
  • the illuminating unit is spatially separated from the first unit and/or the second unit such that the illuminating unit is arranged in a flow sequence of units after the first unit and previous to the second unit.
  • the flow sequence of units describes the sequence of the units in which they are used.
  • a spatial arrangement of the units in a production hall might be different from the flow sequence of the units. While the semi-finished CdTe solar cell is within the process range of the illuminating unit, the aqueous solution is at least partially present on the first surface of the semi-finished CdTe solar cell.
  • the first unit might comprise a container holding the aqueous solution and a component for dipping the semi-finished CdTe solar cell into the aqueous solution or might comprise a nozzle unit for spraying the aqueous solution onto theback surface of the semi-finished CdTe solar cell or might comprise a roller unit for roller coating the aqueous solution onto the back surface of the semi-finished CdTe solar cell.
  • the process range of the illuminating unit is spatially separated from the first unit.
  • the first unit ends its performance, i.e.
  • the illuminating unit is formed such that the aqueous solution remains on the back surface of the semi-finished CdTe solar cell during illuminating.
  • the illuminating unit has a holder holding the semi-finished CdTe solar cell such that the back surface is held horizontally and that the lateral distribution of the aqueous solution over the lateral extensions of the back surface is not changed as compared with that resulting from the first unit for applying the aqueous solution.
  • the semi-finished CdTe solar cell is transported from the illuminating unit to the second unit, where the aqueous solution is removed from the back surface of the semi-finished CdTe solar cell.
  • the illuminating unit is suited for illuminating the semi-finished CdTe solar cell with light having a wavelength in the absorption region of the CdTe solar cell, and preferably with light having a wavelength in the range from 300 to 900 nm.
  • the system further comprises a thirdunit for controlling a temperature of the semi-finished CdTe solar cell to be in the range between 25°C and 80°C during the first time period.
  • the thirdunit may comprise a heating device or a cooling device or a combination thereof depending on the desired temperature of the semi-finished CdTe solar cell.
  • the illuminating unit and the thirdunit might be combined in a temperate tunnel including one or a plurality of lamps producing light.
  • This tunnel may be arranged in a flow sequence of units after the first unit which applies the aqueous solution to theback surface of a semi-finished CdTe solar cell, for instance by spraying or roller coating, and previous to the second unit.
  • the system may comprise an electrical power supply and a contact device for connecting thefront contact layer of the semi-finished CdTe solar cell to the electrical power supplyduring the first time period.
  • the electrical power supply is suited for forming an additional electric field across the semi-finished CdTe solar cell, when it is connected to the semi-finished CdTe solar cell.
  • FIGs. 1A to 1C schematically show exemplary process sequences of the method according to the present application.
  • Fig. 2 schematically shows a first embodiment of the system according to the present application, wherein the first unit and the illuminating unit are combined with each other.
  • Fig. 3 schematically shows a second embodiment of the system according to the present application, wherein the first unit and the illuminating unit are separated from each other.
  • Fig. 1A shows a first exemplary process sequence of the method according to the present application.
  • a semi-finished CdTe solar cell with a first surface as described above is provided in a step S110.
  • an aqueous solution comprising metal ions as described above is applied on the first surface, i.e. on a surface of the CdTe layer.
  • the aqueous solution is at least partially present on the first surface of the semi-finished CdTe solar cell till it is totally removed from the first surface in a step S140, i.e. in a time period of aqueous presence denoted with t A .
  • step S140 The time from the beginning of step S120 to the end of step S140 is the time of the metal doping step denoted by t D , which is equal to the time period t A in this example.
  • t D the time of the metal doping step denoted by the time period t A in this example.
  • the semi-finished CdTe solar cell is additionally illuminated (step S131) and/or an electrical power is applied to the semi-finished CdTe solar cell (step S132) . That is, one or both steps S131 and S132 may be performed. If both steps are performed, the steps S131 and S132 may be performed simultaneously or partially overlapping or fully separated in time from each other.
  • the time periods t 31 and t 32 for which step S131 and step S132, respectively, are performed, may be equal or may be different from each other and they may totally or partially overlap or be totally separated from each other on the time scale.
  • the total time period i.e. the sum of all time periods in which at least one of steps S131 and S132 is performed, is the first time period t 1 shown in Fig. 1A.
  • Steps S131 and/or S132 may overlap with step S120 and/or with step S140.
  • a metal layer is applied on the first surface of the semi-finished CdTe solar cell (step S150) .
  • the combination or entirety of steps S120, S131, S132 and S140 is called the metal doping step according to the present application.
  • Step S210 corresponds to step S110 of Fig. 1A.
  • a metal layer is applied on the first surface of the semi-finished CdTe solar cell in a next step S220.
  • the semi-finished CdTe solar cell has a back surface formed by the metal layer.
  • an aqueous solution comprising metal ions as described above is applied on the back surface, i.e. on a surface of the metal layer (step S230) .
  • the aqueous solution is at least partially present on the back surface of the semi-finished CdTe solar cell till it is totally removed from the back surface in a step S250, i.e. in a time period of aqueous presence denoted with t A .
  • the time from the beginning of step S230 to the end of step S250 is the time of the metal doping step denoted by t D , which is again equal to the time period t A .
  • the semi-finished CdTe solar cell is additionally illuminated (step S241) and/or an electrical power is applied to the semi-finished CdTe solar cell (step S242) .
  • steps S241 and S242 may be performed. If both steps are performed, the steps S241 and S242 may be performed simultaneously or partially overlapping or fully separated in time from each other. That is, the time periods t 41 and t 42 , for which step S241 and step S242, respectively, are performed, may be equal or may be different from each other and they may totally or partially overlap or be totally separated from each other on the time scale. However, the total time period, i.e. the sum of all time periods in which at least one of steps S241 and S242 is performed, is the first time period t 1 shown in Fig. 1B. As described with respect to the first exemplary process sequence in Fig. 1A, steps S241 and/or S242 may overlap with step S230 and/or with step S250. The combination or entirety of steps S230, S241, S242 and S250 is called the metal doping step according to the present application.
  • Step S310 corresponds to step S110 of Fig. 1A and step S210 of Fig. 1B.
  • an aqueous solution comprising metal ions as described above is applied on the first surface, i.e. on a surface of the CdTe layer (step S320) .
  • the aqueous solution is at least partially present on the first surface of the semi-finished CdTe solar cell till it is totally removed from the first surface in a step S330, i.e. in a time period of aqueous presence denoted with t A .
  • step S330 the semi-finished CdTe solar cell is additionally illuminated (step S341) and/or an electrical power is applied to the semi-finished CdTe solar cell (step S342) for a second time period t 2 during an intervening time period t I between step S330 and a step S350, in which a metal layer is applied on the first surface. That is, one or both steps S341 and S342 may be performed. If both steps are performed, the steps S341 and S342 may be performed simultaneously or partially overlapping or fully separated in time from each other.
  • the time periods t 41 and t 42 for which step S341 and step S342, respectively, are performed, may be equal or may be different from each other and they may totally or partially overlap or be totally separated from each other on the time scale.
  • the total time period i.e. the sum of all time periods in which at least one of steps S341 and S342 is performed, is the second time period t 2 shown in Fig. 1C.
  • the combination or entirety of steps S320, S330, S341 and S342 is called the metal doping step according to the present application.
  • a first embodiment (100) of the system according to the present application is shown schematically.
  • the system (100) comprises a first unit (110) , a second unit (120) , an illuminating unit (130) and an electrical power supply (140) .
  • the first unit (110) is suited for applying an aqueous solution (20) as described above on a back surface (11) of a semi-finished CdTe solar cell (10) .
  • the back surface may be a surface of the CdTe layer or may be a surface of a metal layer serving as a back contact layer.
  • the first unit (110) comprises a container (111) , in which the aqueous solution (20) is held, and a component (112) for dipping the semi-finished CdTe solar cell (10) into the aqueous solution (20) .
  • the component (112) may be for instance a holder with a clamp which is attached to the semi-finished CdTe solar cell (10) .
  • the aqueous solution (30) may be heated by a third unit (150) such that the aqueous solution (20) has a temperature between 25°C and below 100°C (below the boiling point of the aqueous solution) .
  • the semi-finished CdTe solar cell (10) preferably has a temperature between 25°C and 80°C if it is dipped into the aqueous solution (20) . Furthermore, an electrode (113) is provided which is also dipped into the aqueous solution (20) . If the electrical power supply (140) is electrically conducting connected to a front contact layer of the semi-finished CdTe solar cell (10) with its one end and to the electrode (113) with its other end by a contact device comprising, for instance, electrical conductors (141) , an electric field is formed between the first electrode (113) and the aqueous solution (20) on one side and the front contact layer of the semi-finished CdTe solar cell (10) on the other side.
  • a contact device comprising, for instance, electrical conductors (141)
  • the illuminating unit (130) for instance a halogen lamp with an illuminance of 100000 lx iscombined with the first unit (110) such that the illuminating unit (130) illuminates the semi-finished CdTe solar cell (10) while it is dipped into the aqueous solution (20) .
  • the semi-finished CdTe solar cell (20) is transported to the second unit (120) (indicated by the arrow) .
  • the second unit (120) which is known from the state of the art comprises, for instance, a rinsing device (121) and a drying device (122) which remove the aqueous solution (20) or rests of it from the back surface (11) of the semi-finished CdTe solar cell (10) .
  • Fig. 3 schematically shows a second embodiment (200) of the system according to the present application.
  • the system (200) comprises a first unit (210) , a second unit (220) and an illuminating unit (230) .
  • the first unit (210) comprises a nozzle array or nozzle device (211) , which is connected to a container (212) holding an aqueous solution (20) as described above by a fluid line (213) .
  • the aqueous solution (20) is sprayed through the nozzle device (211) on a back surface (11) of a semi-finished CdTe solar cell (10) (as indicated by broken arrows) .
  • the back surface may be a surface of the CdTe layer or may be a surface of a metal layer serving as a back contact layer.
  • the semi-finished CdTe solar cell (10) is held on a holder (214) which may be rotatable. Subsequently to applying the aqueous solution (20) to the back surface (11) of the semi-finished CdTe solar cell (10) , the semi-finished CdTe solar cell (10) with the aqueous solution being present on its back surface (11) is transported to a temperate tunnel (240) , in which the illuminating unit (230) is mounted.
  • the illuminating unit (230) is an array of lamps which provide light with a wavelength of 300 to 800 nm and an illuminance of 30000 to 200000lx. While the semi-finished CdTe solar cell (10) is held on a temperate holder (241) within the temperate tunnel (240) , the illuminating unit (230) illuminates the semi-finished CdTe solar cell (10) for a first time period. Thus, the first unit (210) and the illuminating unit (230) are separated from each other in the shown second embodiment (200) of the system.
  • a third unit (250) for instance a cooling device, is mounted within the temperate tunnel (240) . Subsequently to illuminating the semi-finished CdTe solar cell (10) , the semi-finished CdTe solar cell (10) is transported from the temperate tunnel (250) to the second unit (220) , which may comprise the same or other devices as described with respect to Fig. 2.
  • the illuminating unit (130, 230) is arranged such that the light emitted by the illuminating unit (130, 230) impinges on the back surface (11) of the semi-finished CdTe solar cell (10) .
  • this is only one exemplary arrangement of the illuminating unit which might be used if the back surface of the semi-finished CdTe solar cell is the first surface of the semi-finished CdTe solar cell, i.e. a surface of the CdTe layer.
  • the illuminating unit should be arranged within the system for performing a metal doping step such that the light emitted by the illuminating unit impinges on the sunny side of the semi-finished CdTe solar cell, i.e. on the transparent substrate.
  • the semi-finished CdTe solar cell may nevertheless be illuminated on the sunny side in any case.

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de production d'une cellule solaire CdTe commençant par la fourniture d'une cellule solaire CdTe semi-finie comprenant un CdTe formant une première surface de la cellule solaire CdTe semi-finie (S110). Une couche métallique est appliquée sur la première surface de la cellule solaire CdTe semi-finie (S150) et une solution aqueuse comprenant des ions métalliques ou des ions contenant du métal est appliquée sur une surface arrière de la cellule solaire CdTe semi-finie (S120) et éliminée ultérieurement (S140). L'application et l'élimination de la solution aqueuse peuvent être effectuées avant ou après l'application de la couche métallique. En outre, la cellule solaire CdTe semi-finie est également éclairée ou une puissance électrique externe est appliquée à la cellule solaire CdTe semi-finie (S131, S132) pendant une première période de temps du temps pendant lequel la solution aqueuse est présente sur la surface arrière de la cellule solaire CdTe semi-finie ou pendant une deuxième période de temps après l'élimination de la solution aqueuse et avant l'application de la couche métallique.
PCT/CN2016/112433 2016-12-27 2016-12-27 Procédé de formation d'une cellule solaire à couches minces cdte comprenant une étape de dopage métallique et système de réalisation de ladite étape de dopage métallique Ceased WO2018119685A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201680074171.6A CN108604502B (zh) 2016-12-27 2016-12-27 用于形成CdTe薄膜太阳能电池的包括金属掺杂步骤的方法和用于执行所述金属掺杂步骤的系统
DE112016006558.2T DE112016006558T5 (de) 2016-12-27 2016-12-27 Verfahren zum Bilden einer CdTe-Dünnschicht-Solarzelle einschließlich eines Metalldotierungsschritts und eines Systems zum Durchführen des Metalldotierungsschritts
PCT/CN2016/112433 WO2018119685A1 (fr) 2016-12-27 2016-12-27 Procédé de formation d'une cellule solaire à couches minces cdte comprenant une étape de dopage métallique et système de réalisation de ladite étape de dopage métallique

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PCT/CN2016/112433 WO2018119685A1 (fr) 2016-12-27 2016-12-27 Procédé de formation d'une cellule solaire à couches minces cdte comprenant une étape de dopage métallique et système de réalisation de ladite étape de dopage métallique

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EP4276920A1 (fr) * 2022-05-10 2023-11-15 China Triumph International Engineering Co., Ltd. Procédé de fabrication d'un dispositif à cellules solaires en couches minces à base de cdte semi-fini
EP4276919A1 (fr) * 2022-05-10 2023-11-15 China Triumph International Engineering Co., Ltd. Procédé de fabrication d'un dispositif à cellules solaires à couches minces à base de cdte semi-fini
WO2023236106A1 (fr) * 2022-06-08 2023-12-14 China Triumph International Engineering Co., Ltd. Procédé de fabrication d'une cellule solaire à film mince à base de cdte avec un profil d'indice de réfraction gradué dans la couche absorbante à base de cdte et cellule solaire à film mince à base de cdte avec un profil d'indice de réfraction gradué

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EP4276919A1 (fr) * 2022-05-10 2023-11-15 China Triumph International Engineering Co., Ltd. Procédé de fabrication d'un dispositif à cellules solaires à couches minces à base de cdte semi-fini
WO2023236106A1 (fr) * 2022-06-08 2023-12-14 China Triumph International Engineering Co., Ltd. Procédé de fabrication d'une cellule solaire à film mince à base de cdte avec un profil d'indice de réfraction gradué dans la couche absorbante à base de cdte et cellule solaire à film mince à base de cdte avec un profil d'indice de réfraction gradué

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CN108604502A (zh) 2018-09-28
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