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WO2018117485A1 - Détecteur de rayonnement comprenant un transistor formé sur un substrat en carbure de silicium - Google Patents

Détecteur de rayonnement comprenant un transistor formé sur un substrat en carbure de silicium Download PDF

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Publication number
WO2018117485A1
WO2018117485A1 PCT/KR2017/014119 KR2017014119W WO2018117485A1 WO 2018117485 A1 WO2018117485 A1 WO 2018117485A1 KR 2017014119 W KR2017014119 W KR 2017014119W WO 2018117485 A1 WO2018117485 A1 WO 2018117485A1
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Prior art keywords
region
radiation detector
electrode
radiation
substrate
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PCT/KR2017/014119
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English (en)
Korean (ko)
Inventor
정원규
이진민
김동욱
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Kyung Hee University
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Kyung Hee University
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Priority claimed from KR1020160173413A external-priority patent/KR101864963B1/ko
Priority claimed from KR1020170026026A external-priority patent/KR101804090B1/ko
Application filed by Kyung Hee University filed Critical Kyung Hee University
Publication of WO2018117485A1 publication Critical patent/WO2018117485A1/fr
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/02—Dosimeters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/161—Applications in the field of nuclear medicine, e.g. in vivo counting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Definitions

  • One embodiment of the present invention relates to a radiation detector including a transistor formed on a silicon carbide substrate, and more particularly, to a radiation detector that can be measured at a high level of 1MeV or more.
  • a radiation detector including a photoelectric conversion unit including a first region formed on a silicon carbide (SiC) substrate and a second region partially formed in the first region.
  • SiC silicon carbide
  • Radiation such as X-rays and gamma rays ( ⁇ -rays), are highly transparent and can be used to see the inside of an object. Therefore, radiation is important for medical field and nondestructive testing.
  • the amount of radiation varies depending on the density inside the subject, and the difference in the amount of radiation may be measured to image the inside of the subject.
  • the radiographic apparatus includes a radiation generator for radiating radiation onto a subject and a radiation detector for detecting radiation passing through the subject.
  • the radiation detector emits radiation so that a radiation image or a real time radiation image is output as a digital signal.
  • the radiation detector includes a photoelectric conversion unit that converts light into an electrical signal, and a scintillator layer that contacts the photoelectric conversion substrate and converts radiation incident from the outside into light. Then, the light converted from the radiation incident by the scintillator layer reaches the photoelectric conversion portion and is converted into electric charge. This charge is transferred to a transistor connected to the photoelectric conversion unit, which is read as an output signal and converted into a digital image signal by, for example, a predetermined signal processing circuit.
  • a photodiode may be used as the photoelectric conversion unit, and the photodiode may be a PIN diode or p (p) including a p (positive) type semiconductor layer, an i (intrinsic) type semiconductor layer (i layer), and an n (negative) type semiconductor layer. It may be a PN type diode including a positive type semiconductor layer and an n (negative) type semiconductor layer.
  • Conventional radiation detectors are mostly for detecting low-level radiation doses such as X-rays, and all radiation detectors are destroyed when high-level radiation doses of 1 MeV or more are irradiated to these systems.
  • the diode formed in the photoelectric conversion portion has a vertical PIN structure or a PN structure, which is not suitable for integration because it has a structure that penetrates the silicon wafer. If the resolution is 1 mm or less, there is a problem that detection is difficult.
  • the radiation detector is made of a hard hard material, there is a problem that can not adhere to the curved surface of the human body.
  • One embodiment of the present invention relates to a radiation detector that can be measured even at a high level of 1MeV or more by manufacturing a transistor using a silicon carbide (SiC; Silicon Carbide) substrate.
  • SiC silicon carbide
  • One embodiment of the present invention relates to a radiation detector capable of detecting high-level radiation using a gradual breakdown of a silicon carbide substrate, thereby removing a photodiode conventionally used as a photoelectric conversion unit.
  • An embodiment of the present invention detects low-level radiation by using a change in dielectric constant of a gate insulating layer or a change in an electron hole pair (EHP) in a drain region, thereby removing a photodiode conventionally used as a photoelectric conversion unit. It relates to a radiation detector.
  • One embodiment of the present invention relates to a radiation detector in which all the wirings are formed on a silicon carbide (SiC) substrate, whereby the size of a transistor can be reduced and the device can be manufactured in a planar structure.
  • SiC silicon carbide
  • One embodiment of the present invention relates to a radiation detector for simplifying the inspection, measurement, and measurement analysis of a device by forming all wirings on a silicon carbide (SiC) substrate.
  • SiC silicon carbide
  • One embodiment of the invention relates to a flexible radiation detector fabricated using a flexible printed circuit (FPC) to connect with external wiring.
  • FPC flexible printed circuit
  • One embodiment of the present invention relates to a radiation detector capable of detecting radiation irradiation in real time even from various angles by using a flexible substrate, the contact of the curved surface of the human body.
  • Another embodiment of the present invention relates to a radiation detector capable of measuring even at a high level of 1 MeV or more by manufacturing a photoelectric conversion unit using silicon carbide (SiC).
  • Another embodiment of the present invention relates to a radiation detector capable of improving the degree of integration by reducing the size of the photoelectric conversion part by forming a photoelectric conversion part as a photodiode having a horizontal structure to induce a current flow path to flow horizontally on the surface of the substrate. .
  • Another embodiment of the present invention relates to a radiation detector in which all electrodes are placed on top of the photoelectric conversion unit to simplify the device process and facilitate inspection and measurement analysis.
  • Another embodiment of the invention is directed to a flexible radiation detector fabricated using a flexible printed circuit (FPC) to connect with external wiring.
  • FPC flexible printed circuit
  • Another embodiment of the present invention relates to a radiation detector capable of detecting radiation irradiation in real time even at various angles using a flexible substrate, and capable of contacting the curved surface of the human body.
  • Radiation detector is a silicon carbide (SiC) substrate; A gate insulating film formed on the silicon carbide substrate; A gate electrode formed on the gate insulating film; Source and drain regions disposed on both sides of the gate electrode and spaced apart from each other in the silicon carbide substrate; An interlayer insulating layer formed on the gate electrode; A word line formed on the interlayer insulating layer and connected to the gate electrode; And a scintillator formed on the interlayer insulating layer, the bit line connected to the drain region, and a scintillator disposed on the interlayer insulating layer.
  • SiC silicon carbide
  • the radiation detector may destroy the silicon carbide substrate by the high level radiation and detect the high level radiation.
  • the radiation detector may detect the low level radiation by changing the dielectric constant of the gate insulating layer due to the low level radiation.
  • the radiation detector may change the electron-hole pair (EHP) of the drain region by low level radiation to detect the low level radiation.
  • EHP electron-hole pair
  • the display device may further include a bias line connected to the source region on the interlayer insulating layer.
  • All wirings connected to the gate electrode, the source region and the drain region may be formed on the silicon carbide substrate.
  • At least one contact hole may be included in the interlayer insulating layer.
  • the gate electrode may include at least one of amorphous Si, poly crystalline Si, single crystalline Si, and a metal.
  • the radiation detector may include at least one flexible printed circuit (FPC).
  • FPC flexible printed circuit
  • the radiation detector may be connected to an external wiring by using a flexible printed circuit (FPC).
  • FPC flexible printed circuit
  • the radiation detector may be a flexible device.
  • a radiation detector may include a substrate of a first impurity type; At least one photoelectric conversion unit including a first region of a first impurity type formed on the substrate of the first impurity type and a second region of a second impurity type separated from the first region; A first electrode formed on the first region; A second electrode formed on the second region; And a scintillator formed on the first electrode and the second electrode.
  • the first impurity type substrate may be formed of silicon carbide (SiC), the first impurity type may be n-type, and the second impurity type may be p-type.
  • the second region may be partially formed in the first region.
  • the first electrode and the second electrode may be formed on the same layer.
  • the substrate of the first impurity type may further include an I-type semiconductor layer between the first region of the first impurity type and the second region of the second impurity type.
  • the first electrode and the second electrode may be connected to the first region and the second region through vias.
  • a method of manufacturing a radiation detector comprising: preparing a substrate of a first impurity type; Forming at least one photoelectric conversion part including a first region of a first impurity type and a second region of a second impurity type separated from the first region on the substrate of the first impurity type; Forming a first electrode on the first region; Forming a second electrode on the second region; And forming a scintillator on the first electrode and the second electrode.
  • the second region may be formed by ion implantation.
  • the method may further include forming a first via connecting the first region and the first electrode.
  • the method may further include forming a second via connecting the second region and the second electrode.
  • the radiation detector according to an embodiment of the present invention can measure even at a high level of 1 MeV or more by manufacturing a radiation detector including a transistor formed on a silicon carbide (SiC) substrate.
  • the radiation detector according to an embodiment of the present invention detects high-level radiation by using gradual destruction of the silicon carbide substrate, thereby removing a photodiode conventionally used as a photoelectric converter.
  • the radiation detector according to an embodiment of the present invention detects low-level radiation by using a change in dielectric constant of a gate insulating layer or a change of an electron-hole pair (EHP) in a drain region, and thus is a photoelectric conversion unit.
  • the diode can be removed.
  • the radiation detector according to the embodiment of the present invention forms all the wirings connected to the gate electrode, the source region, and the drain region on the silicon carbide substrate to reduce the size of the transistor, thereby manufacturing the device in a planar structure. have.
  • the radiation detector according to the embodiment of the present invention may manufacture the transistor in a planar structure on the surface of the silicon carbide substrate, thereby reducing the size of the photoelectric conversion portion, thereby improving the degree of integration.
  • the transistor is manufactured in a planar structure on the surface of the silicon carbide substrate so that the device can operate at 100V or less.
  • the radiation detector according to an embodiment of the present invention exists on a silicon carbide substrate within 1 mm x 1 mm in width and width, but manufactures a transistor smaller than a silicon carbide substrate, so that most of the incident radiation is transmitted to the human body. You can do that.
  • all the wirings are formed on the silicon carbide substrate, thereby simplifying the structure of the device, and inspecting and measuring analysis.
  • the radiation detector according to the exemplary embodiment of the present invention may be manufactured as a flexible device by using a flexible printed circuit (FPC) to connect with an external wiring.
  • FPC flexible printed circuit
  • the radiation detector according to an embodiment of the present invention can detect a linear signal instead of on / off by using an FPC.
  • the radiation detector according to an embodiment of the present invention may detect radiation in real time even at various angles using a flexible substrate, and may manufacture a radiation detector capable of contacting a curved surface of a human body.
  • the radiation detector according to an embodiment of the present invention can be attached to a human body to track even small movements of a patient.
  • the radiation detector according to another embodiment of the present invention can be measured even at a high level of 1 MeV or more by manufacturing a photoelectric conversion unit using silicon carbide (SiC).
  • the radiation detector according to another embodiment of the present invention forms a photodiode with a photodiode having a horizontal structure to induce a current flow path to flow horizontally on the surface of the substrate, thereby reducing the size of the photoelectric converter and improving integration. have.
  • the radiation detector according to another embodiment of the present invention forms a photodiode with a photodiode having a horizontal structure and adjusts the size thereof, so that the driving voltage range of 400V, which is an electrical characteristic of existing silicon carbide (SiC), is less than 40V. It can be implemented to eliminate the risk of direct human contact.
  • the radiation detector according to another embodiment of the present invention may increase the detection position sophistication by manufacturing a current path of 100 ⁇ m to 650 ⁇ m of a semiconductor passing through a simple PIN diode and a PN diode to ⁇ 100 ⁇ m or less. .
  • the radiation detector according to another embodiment of the present invention may increase the amount of radiation transmitted to the human body by forming a sensor area only on a part of the radiation detector by partially forming the second region on the first region.
  • all electrodes are disposed on the upper portion of the photoelectric conversion unit to simplify the structure of the device, and to facilitate inspection and measurement analysis.
  • the radiation detector according to another embodiment of the present invention may be manufactured as a flexible device using a flexible printed circuit (FPC) to connect with an external wiring.
  • FPC flexible printed circuit
  • the radiation detector according to another embodiment of the present invention may detect a linear signal instead of on / off by using a flexible printed circuit (FPC).
  • FPC flexible printed circuit
  • the radiation detector according to another embodiment of the present invention may detect radiation in real time even at various angles using a flexible substrate, and may manufacture a radiation detector capable of contacting a curved surface of a human body.
  • the radiation detector according to another embodiment of the present invention can be attached to a human body to track even small movements of a patient.
  • FIG. 1 is a cross-sectional view of a radiation detector according to an embodiment of the present invention.
  • FIGS. 2A and 2B illustrate a surface of a silicon carbide on which a transistor of a radiation detector according to an embodiment of the present invention is formed.
  • FIG 3 illustrates a cross-sectional view of a radiation detector according to another embodiment of the present invention.
  • Figure 4 is a three-dimensional view showing a radiation detector according to another embodiment of the present invention.
  • 5A and 5B are images illustrating an FPC used in a radiation detector according to embodiments of the present invention.
  • FIG. 6 is a flowchart illustrating a method of manufacturing a radiation detector according to another embodiment of the present invention.
  • an embodiment As used herein, “an embodiment”, “an example”, “side”, “an example”, etc., should be construed that any aspect or design described is better or advantageous than other aspects or designs. It is not.
  • the term 'or' refers to an inclusive or 'inclusive or' rather than an exclusive or 'exclusive or'.
  • the expression 'x uses a or b' means any one of natural inclusive permutations.
  • first and second may be used to describe various components, but the components are not limited by the terms. The terms are used only to distinguish one component from another.
  • a part such as a film, layer, area, configuration request, etc. is said to be "on” or “on” another part, the other film, layer, area, component in the middle, as well as when it is directly above another part. It also includes the case where it is interposed.
  • FIG. 1 is a cross-sectional view of a radiation detector according to an embodiment of the present invention.
  • a radiation detector 100 may include a silicon carbide (SiC) substrate 110, a gate insulating layer 120 formed on a silicon carbide substrate 110, and a gate.
  • the source electrode 141, the drain region 142, and the gate which are disposed on both sides of the gate electrode 130 and the gate electrode 130 formed on the insulating film 120 and are spaced apart from each other in the silicon carbide substrate 110.
  • a transistor including an interlayer insulating layer 150 formed on the electrode 130 is provided.
  • the radiation detector 100 may include at least one transistor in a chip.
  • At least one wiring may be formed on the interlayer insulating layer 150.
  • a word line 173 connected to the gate electrode 130, a bit line 172 connected to the drain region 142, and a source region 141 may be connected to the interlayer insulating layer 150.
  • the interlayer insulating layer 150 may include at least one contact hole 161, 162, and 163.
  • Conventional radiation detectors use a scintillator to convert the irradiated radiation into visible light when the radiation is irradiated.
  • the converted visible light is incident on the photodiode used as the photoelectric converter, and the photoelectric converter may generate an electrical signal corresponding to the intensity of the incident visible light.
  • the photodiode changes the electron-hole pair (EHP) in the depletion layer of the photodiode due to the incident visible light, so that a current flows inside the photodiode.
  • EHP electron-hole pair
  • the electrical signal generated at the photodiode is provided to a transistor disposed on the substrate.
  • the radiation detector 100 may be used to change the dielectric constant of the gate insulating layer 120, the electron-hole pair change of the depletion layer of the drain region 142, or the change of the silicon carbide substrate 110. Since radiation can be detected by this, the photodiode conventionally used as a photoelectric conversion part can be removed.
  • the radiation detector 100 includes a silicon carbide substrate 110.
  • the silicon carbide substrate 110 of the radiation detector 100 includes a first surface (top) and a second surface (bottom) facing each other, the first surface (top) Transistors and scintillators can be formed.
  • Si substrates which are mainly used for X-ray detection.
  • the radiation detector is used for high-level radiation rather than X-rays, the silicon substrate is destroyed by high-level radiation, and thus the silicon substrate is not suitable for high-level radiation.
  • the radiation detector 100 since the radiation detector 100 according to the embodiment of the present invention uses silicon carbide as the substrate 110, the substrate is not destroyed even at a high level of 1 MeV or more, and thus may be used to detect various radiations in addition to X-rays.
  • the silicon carbide substrate 110 may serve as a photoelectric conversion unit.
  • the radiation detector 100 converts the radiation irradiated with the scintillator into visible light when the radiation is irradiated, and the converted visible light changes the silicon carbide substrate 110 used as the photoelectric conversion unit.
  • the radiation can be detected.
  • the silicon carbide substrate 110 may be gradually destroyed by the irradiated high level radiation, thereby detecting the high level radiation.
  • the photodiode since the destruction of the silicon carbide substrate 110 plays the same role as the photodiode used as the photoconversion unit, the photodiode may be removed.
  • the silicon carbide substrate 110 may be used as a disposable element because the high-level radiation is detected by the destruction of the silicon carbide substrate 110.
  • the gate insulating layer 120 is formed on the silicon carbide substrate 110.
  • a patterning process may be performed to form the gate insulating layer 120 having a desired size and shape.
  • the gate insulating layer 120 may serve as a photoelectric converter.
  • the radiation detector 100 converts the radiation irradiated with the scintillator into visible light when the radiation is irradiated, and the converted visible light changes the dielectric constant of the gate insulating film 120 used as the photoelectric converter. Radiation can be detected.
  • the dielectric constant of the gate insulating layer 120 may be changed by the low level radiation to detect the low level radiation.
  • the gate insulating film 120 When the gate insulating film 120 is used as the photoelectric conversion part, the gate insulating film 120 may be used as a disposable device because low level radiation is detected by the gradual breakdown of the gate insulating film 120.
  • the photodiode can be removed.
  • the gate insulating film 120 may be formed of any one of an inorganic insulating film, an organic insulating film, a dual structure of an inorganic insulating film, and an organic / inorganic hybrid insulating film.
  • a spin coating method may be used. .
  • the gate insulating film 120 is, for example, aluminum oxide (Al 2 O 3), silicon oxide (SiO 2), hafnium oxide (HfO 2), zirconium oxide (ZrO 2) or silicon nitride (Si3N4) etc. At least one of materials having a dielectric property of may be used.
  • the gate electrode 130 is formed on the silicon carbide substrate 110.
  • a patterning process may be performed to form a gate electrode 130 having a desired size and shape.
  • the gate electrode 120 may have the same size and shape as the gate insulating layer 120, but is not limited thereto.
  • the gate electrode 130 may be formed to extend from the word line 173, and the gate electrode 130 may be formed of the same material as the word line 173 through the same process.
  • the gate electrode 130 may include at least one of amorphous silicon, poly crystalline Si, single crystalline Si, and a metal.
  • the metal used as the gate electrode 130 may include molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), copper (Cu), or the like. At least one of the metals may be included.
  • Source and drain regions 141 and 142 are disposed on both sides of the gate electrode 130 and are formed to be spaced apart from each other in the silicon carbide substrate 110.
  • the source region 141 and the drain region 142 may be formed at both ends of the gate electrode 130 to be spaced apart from each other in the silicon carbide substrate 113.
  • the channel region may be formed between the lower side of the gate electrode 130, the source region 141, and the drain region 142, and serves as a channel through which electrons move.
  • the source region 141 and the drain region 142 may be formed by performing an ion implantation process for implanting impurities into the silicon carbide substrate 110.
  • the source region 141 or the drain region 142 performs ion implantation to have a P-type, and the channel region of the silicon carbide substrate 110 is performed. If the P-type, the source region 141 or drain region 142 is implanted to have an N-type, the silicon carbide substrate 110 of the radiation detector 100 according to an embodiment of the present invention May have a PIN or PN structure.
  • the drain region 142 may be used as the photoelectric conversion unit.
  • the radiation detector 100 converts the radiation irradiated with the scintillator into visible light when the radiation is irradiated, and the converted visible light is electron-holes in the drain region 142 used as the photoelectric conversion unit.
  • the pair can be changed to detect radiation.
  • the electron-hole pair of the drain region 142 may be changed by the irradiated low level radiation to detect the low level radiation.
  • the drain region 142 When the drain region 142 is used as the photoelectric conversion unit, since the low level radiation is detected by the change of the electron-hole pair of the drain region 142, the drain region 142 may be used as a multi-use device.
  • the photodiode can be removed.
  • An interlayer insulating layer 150 is formed on the silicon carbide substrate 110 to form at least one contact hole 161, 162, and 163.
  • the interlayer insulating layer 150 may protect the transistor in a subsequent process such as etching or polishing.
  • the interlayer insulating layer 150 an inorganic insulating layer or an organic insulating layer may be used.
  • the interlayer insulating layer 150 may include at least one of an insulating layer such as silicon oxide (SiO 2 ) silicon nitride (SiNx) or silicon oxynitride (SiON). It can be formed as one.
  • the radiation detector 100 may include the silicon carbide substrate 110, the gate insulating layer 120, the gate electrode 130, the source region 141, and the drain region 142 as described above. And a transistor including an interlayer insulating layer 150.
  • the radiation detector 100 may include at least one transistor in a chip.
  • the radiation detector 100 may increase the amount of radiation transmitted to the human body as the number of transistors included in the chip decreases. On the contrary, the radiation detector 100 increases as the number of transistors included in the chip increases. The accuracy of the detector 100 may be improved.
  • the radiation detector 100 is preferably manufactured by adjusting the number of transistors included in the chip according to the purpose of use.
  • the radiation detector 100 may manufacture the transistor in a planar structure on the surface of the silicon carbide substrate 110 so that the device may operate even at 100V or less.
  • the radiation detector 100 may manufacture the transistor in a planar structure on the surface of the silicon carbide substrate 110 to reduce the size of the radiation detector 100, thereby improving the degree of integration.
  • the radiation detector 100 is present on the silicon carbide substrate within 1mm x 1mm width of the transistor, the majority of the radiation incident by manufacturing the transistor size smaller than the substrate It can be transmitted through the human body.
  • the interlayer insulating layer 150 may include at least one contact hole 161, 162, and 163.
  • the first contact hole 161 to the third contact hole 163 may be formed in the interlayer insulating layer 150, and the first contact hole 161 to the third contact hole 163 may include a conductive material therein. have.
  • the first contact hole 161 connects the source region 141 and the bias line 171
  • the second contact hole 162 connects the drain region 142 and the bit line
  • the gate electrode 130 may be connected to the word line 193.
  • the first contact hole 161 to the third contact hole 163 are molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and neodium. At least one of metals such as (Nd) and copper (Cu) may be included.
  • the radiation detector 100 includes at least one wire connected to the gate electrode 130, the source region 141, and the drain region 142.
  • a word line 173 connected to the gate electrode 130 may be formed on the interlayer insulating layer 150.
  • the word line 173 is connected to the gate electrode 130 through the third contact hole 163, and the word line 173 may be formed of the same material as the gate electrode 130 through the same process, but is not limited thereto. It doesn't happen.
  • the word line 173 may be formed of a metal such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodium (Nd), or copper (Cu). It may be made of an alloy thereof, and may be made of a single layer or multiple layers of two or more such metals or alloys.
  • Mo molybdenum
  • Al aluminum
  • Cr chromium
  • Au gold
  • Ti titanium
  • Ni nickel
  • Nd neodium
  • Cu copper
  • It may be made of an alloy thereof, and may be made of a single layer or multiple layers of two or more such metals or alloys.
  • the bit line 172 connected to the drain region 142 may be formed on the interlayer insulating layer 150.
  • the bit line 172 is connected to the drain region 142 through the second contact hole 162, and the electronic signal is passed through the bit line 172 connected to the drain region 142 and the drain region 142 of the transistor. Can be displayed as a signal.
  • Bit line 172 is a metal such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodium (Nd) or copper (Cu), or It may be made of an alloy thereof, and may be made of a single layer or multiple layers of two or more such metals or alloys.
  • Mo molybdenum
  • Al aluminum
  • Cr chromium
  • Au gold
  • Ti titanium
  • Ni nickel
  • Nd neodium
  • Cu copper
  • It may be made of an alloy thereof, and may be made of a single layer or multiple layers of two or more such metals or alloys.
  • the bias line 171 connected to the source region 141 may be formed on the interlayer insulating layer 150.
  • the bias line 171 may be connected to the source region 141 through the first contact hole 141 formed in the interlayer insulating layer 150, and may apply a bias voltage through the bias line 171.
  • the bias line 171 may receive a reverse bias voltage and a forward bias voltage from an external power supply, but is not limited thereto.
  • the bias line 171 is a metal such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodium (Nd), or copper (Cu), or It may be made of an alloy thereof, and may be made of a single layer or multiple layers of two or more such metals or alloys.
  • Mo molybdenum
  • Al aluminum
  • Cr chromium
  • Au gold
  • Ti titanium
  • Ni nickel
  • Nd neodium
  • Cu copper
  • It may be made of an alloy thereof, and may be made of a single layer or multiple layers of two or more such metals or alloys.
  • bias line 171, the bit line 172, and the word line 173 may be formed in parallel in the same direction.
  • the bias line 171, the bit line 172, and the word line 173 are formed in parallel in the same direction, thereby forming a plurality of wires in a single patterning process. Can reduce process difficulty.
  • the radiation detector 100 forms all wirings connected to the gate electrode 130, the source region 141, and the drain region 142 on the silicon carbide substrate 110. Since the size of the transistor can be reduced, the device can be manufactured in a planar structure.
  • all wirings connected to the gate electrode 130, the source region 141, and the drain region 142 are formed on the silicon carbide substrate 110. Device simplification, inspection and measurement analysis can be facilitated.
  • the radiation detector 100 may include a scintillator (not shown) disposed on the interlayer insulating layer 150.
  • the scintillator is formed in the front direction of the radiation detector 100 to allow the radiation transmitted through the object to be incident, and converts the light into a wavelength of light that can be absorbed by the photoelectric conversion unit, for example, visible light in the green wavelength range. You can.
  • the scintillator can include solid, liquid and gas scintillators, and the solid scintillator can include organic and inorganic scintillators.
  • the radiation conversion efficiency is low but the reaction rate is fast, and the inorganic scintillator has an advantage of high light output and good linearity, and an appropriate scintillator may be used if necessary.
  • the scintillator may be formed of a halogen compound such as thallium or sodium doped cesium iodide or may include an oxide-based compound such as gadolinium sulfate, but is not limited thereto.
  • a halogen compound such as thallium or sodium doped cesium iodide
  • an oxide-based compound such as gadolinium sulfate, but is not limited thereto.
  • the scintillator may be attached to the front surface of the transistor in the form of a film and may be deposited and formed by a chemical vapor deposition (CVD) method.
  • CVD chemical vapor deposition
  • the scintillator may further include a reflective layer on a front surface of which radiation is incident.
  • the reflective layer may be formed of a material that can transmit radiation, for example, the reflective layer may be formed of a metal such as aluminum or titanium, or may be formed of an organic material such as glass, carbon, or ceramic, but is not limited thereto. It doesn't happen.
  • the reflective layer may improve the light utilization efficiency by reflecting the visible light, which is emitted to the outside of the visible light converted by the scintillator and lost, to the inside.
  • the radiation detector 100 may include at least one flexible printed circuit (FPC).
  • FPC flexible printed circuit
  • the radiation detector 100 may be connected to an external wiring by using a flexible printed circuit (FPC).
  • FPC flexible printed circuit
  • the FPC includes a first surface (top) of the silicon carbide substrate 110 on which transistors and scintillators are formed to form wirings connected to the gate electrode 130, the source region 141, or the drain region 142. Can be formed (or connected).
  • an FPC may be formed (or connected) in a region where no device exists.
  • the FPC is manufactured so that the radiation detector 100 has a flexible structure by additionally forming an FPC on the second surface (bottom) instead of the first surface (top) on which the transistor and scintillator are formed on the silicon carbide substrate 110. can do.
  • the radiation detector 100 may be formed with a back bias combined reference line (not shown) on the second surface (bottom) of the silicon carbide substrate 110. have.
  • the back bias dual reference line may apply a back bias to the second surface (lower end) of the silicon carbide substrate 110 to form a depletion layer in the channel region or the drain region.
  • the radiation detector 100 In order to form the radiation detector 100 in a flexible structure, the upper and lower wirings must be formed of FPC. Therefore, the radiation detector 100 according to the embodiment of the present invention may have a flexible structure by using the FPC, and thus may be formed of a flexible device.
  • the radiation detector 100 may be attached to a human body, thereby addressing the matrix array of the radiation detector 100, and positioning the signal detected by the radiation detector at the time of irradiation to position tracking. Can be used to track even small movements.
  • gold can be inserted in or around a subject (eg, cancer cell) to be measured, and then the radiation can be tracked more precisely in conjunction with the signal.
  • the FPC formed on the top and the FPC formed on the bottom can be arranged at 90 degrees, the FPC formed on the top can be used for the purpose of detecting electrical characteristics, the FPC formed on the bottom rather than the role of electrical wiring for device fixing It can be configured to have more function of fixing.
  • the FPC may be connected by using electrical wiring and soldering by forming a hole in a part.
  • the radiation detector 100 may detect a linear signal instead of on / off by using an FPC.
  • the radiation detector 100 by forming the radiation detector 100 according to an embodiment of the present invention as a flexible element, it is possible to manufacture a radiation detector 100 capable of human contact.
  • the conventional method of preparing the radiation to be irradiated to the device before the patient lying down, the radiation detector on the floor and the method of preparing the position or quantity is fixed or prepared by adjusting the coordinate value like a cyber knife As a result, a person was moved to a fixed position to determine the position, or a fixed patient was examined to determine the position.
  • the radiation detector 100 can directly sense the position of the patient to track the position only to the point of very low radiation during the pre-irradiation, and irradiate any part with the value generated in the signal You can determine if you want to do so, which reduces preliminary preparation time and speeds up response time.
  • FIGS. 2A and 2B illustrate a surface of a silicon carbide on which a transistor of a radiation detector according to an embodiment of the present invention is formed.
  • 2A and 2B include the same components as those of FIG. 1 except that the surface of the silicon carbide on which the transistor of the radiation detector is formed according to an embodiment of the present invention is omitted. do.
  • the radiation detector according to an embodiment of the present invention includes, but is not limited to, four pixels P, and includes at least one pixel P.
  • At least one pixel P may include a transistor as shown in FIG. 1.
  • the radiation detector according to the exemplary embodiment of the present invention may form the transistor on the silicon carbide substrate 110 within 1 mm ⁇ 1 mm.
  • the transistor is formed in the center of the pixel P in order to clearly illustrate the transistor.
  • the transistor is not limited thereto, and the transistor may be manufactured in a smaller size than the silicon carbide substrate 110 or the pixel P.
  • the transistor may be formed in a portion smaller than the pixel P instead of the center portion of the pixel P.
  • the radiation detector according to an embodiment of the present invention is present on the silicon carbide substrate 110 within 1 mm x 1 mm in width and width, but by making the transistor smaller than the silicon carbide substrate 110, Most of the incident radiation can be transmitted to the human body.
  • the transistor as shown in FIG. 1 may have various planar structures on the silicon carbide substrate 110, and preferably may have the structures of FIGS. 2A and 2B, but is not limited thereto.
  • a transistor of a radiation detector includes a gate electrode 130, a source region 141, and a drain region 142, each of which includes a gate electrode 130, Wires are connected to the source region 141 and the drain region 142.
  • the bias line 171 is electrically connected to the source region 141
  • the bit line 172 is electrically connected to the drain region 142
  • the word line 173 is connected to the gate electrode 130. Can be electrically connected.
  • the radiation detector according to the exemplary embodiment of the present invention may include a bias line 171, a bit line 172, and a word line 173 formed in parallel to the same layer.
  • the radiation detector according to the exemplary embodiment of the present invention may be formed such that the bias line 171, the bit line 172, and the word line 173 cross different layers, in this case, the bias line 171. It is assumed that both the bit line 172 and the word line 173 are formed on top of the transistor.
  • all wirings connected to the gate electrode 130, the source region 141, and the drain region 142 may be disposed on the upper end of the transistor, thereby simplifying the structure of the device and inspecting the radiation detector. And measurement analysis is convenient.
  • the gate electrode 130, the source region 141, and the drain region 142 are formed side by side on the same line to form a trident shape ⁇ . It may have a planar structure.
  • the source region 141 and the drain region 142 are formed side by side on the same line, and the gate electrode 130 includes the source region 141 and Protruding from the drain region 142 may have a cross-shaped (+) planar structure.
  • FIG 3 illustrates a cross-sectional view of a radiation detector according to another embodiment of the present invention.
  • a radiation detector may include a substrate 210 of a first impurity type and a first region 221 of a first impurity type formed on a substrate 210 of a first impurity type. And at least one photoelectric conversion unit including a second region 222 of a second impurity type distinct from the first region 221, a first electrode 241, and a second formed on the first region 221. A second electrode 242 and a scintillator 250 formed on the first electrode 241 and the second electrode 242 are formed on the region 222.
  • first electrode 241 and the second electrode 242 may be connected to the first region 221 and the second region 222 through the vias 231 and 232, and the vias 231 and 232 may be connected to the first region. It may include a first via 231 formed on the region 221 and a second via 232 formed on the second region 222.
  • FIG. 3 illustrates a structure in which the first region 221 of the first impurity type is formed on the substrate 210 of the first impurity type, but is not limited thereto, and the substrate 210 of the first impurity type is not limited thereto. It may be formed in a structure that is itself a first region 221 of the first impurity type.
  • the substrate 210 of the first impurity type may be formed of silicon carbide (SiC).
  • Si substrates which are mainly used for X-ray detection.
  • the radiation detector is used for high-level radiation rather than X-rays, the silicon substrate is destroyed by high-level radiation, and thus the silicon substrate is not suitable for high-level radiation.
  • the substrate 210 of the first impurity type uses silicon carbide (SiC), the substrate is not destroyed even at a high level of 1 MeV or more, and thus may be used to detect various radiations in addition to X-rays. have.
  • SiC silicon carbide
  • the first region 221 is formed on the substrate 210 of the first impurity type.
  • the first region 221 may be formed on the substrate 210 of the first impurity type, the first impurity type may be the same material as the substrate 210, and the first impurity type may be n-type.
  • a second region 222 of a second impurity type may be formed on the first region 221.
  • the second impurity type of the second region 222 may be a p-type.
  • the second region may include at least one selected from the group consisting of B, Al, and Ga.
  • the radiation detector according to another embodiment of the present invention may include at least one photoelectric conversion unit including a first region 221 of the first impurity type and a second region 222 of the second impurity type. .
  • the photoelectric conversion part includes a PN structure photodiode or a P (positive) type semiconductor layer, an I (intrinsic) type semiconductor layer, and a N (negative type) semiconductor layer including a P (positive) type semiconductor layer and a N (negative) type semiconductor layer. It may include a photodiode having a PIN structure.
  • the photodiode having a PIN structure uses an intrinsic SiC wafer, and may have a structure in which an I (intrinsic) type semiconductor layer is formed in the middle by implanting p-type and n-type separately.
  • the radiation detector according to another embodiment of the present invention may increase the detection position sophistication by manufacturing a current path of 100 ⁇ m to 650 ⁇ m of a semiconductor passing through a simple PIN diode and a PN diode to ⁇ 100 ⁇ m or less. Can be.
  • the photoelectric conversion unit uses a photodiode having a horizontal structure instead of a vertical photodiode. It may include.
  • the current flowing through the photodiode has a problem of being fixed by the thickness of the substrate. .
  • the radiation detector according to another embodiment of the present invention can adjust the width and length of the current flowing through the photodiode by forming the photoelectric conversion unit in a horizontal structure according to the designer's intention.
  • the cross-sectional area through which current flows is small, but it is advantageous in that the size required in the integrated device, i.e., the change in current, can be made multiple.
  • the photoelectric conversion unit may be formed of a photodiode having a horizontal structure to induce a current flow path to flow horizontally on the surface of the substrate, thereby reducing the size of the photoelectric conversion unit and improving the degree of integration.
  • the driving voltage of 400V which is an electrical characteristic of silicon carbide, is dangerous even when a small current flows. To reduce this risk, the driving voltage must be reduced by reducing the path through which the current flows.
  • the radiation detector according to another embodiment of the present invention forms a photodiode with a photodiode having a horizontal structure and adjusts the size thereof, so that the driving voltage range of 400V, which is an electrical characteristic of conventional silicon carbide (SiC), is less than 40V. It can be implemented to eliminate the risk of direct human contact.
  • the threshold voltage depends on the concentration of the impurity, the threshold voltage adjustment can be controlled by changing the amount of the impurity.
  • the radiation detector according to another embodiment of the present invention includes a second region 222 partially formed in the first region 221 to form a sensor area on only a part of the radiation detector, thereby transmitting radiation to the human body. You can increase the amount.
  • the photoelectric conversion unit is formed on the rear surface of the scintillator 250, absorbs the converted visible light through the scintillator 250, and converts it into an electrical signal. That is, an electron-hole pair may occur inside the photoelectric conversion unit, and the electron-hole pair may be separated into electrons and holes and converted into an electrical signal.
  • the photoelectric conversion unit may be formed on the substrate 210 in a plurality of pixel units to form a pixel array constituting a radiographic image.
  • Vias 231 and 232 connected to the first electrode 241 and the second electrode 242 are formed on the first region 221 and the second region 222.
  • the vias 231 and 232 include a first via 231 and a second via 232, and the first via 231 connects the first region 221 and the first electrode 241 to the second via 231.
  • the via 232 may connect the electrode of the second region 222 and the second electrode 242.
  • the first via 231 and the second via 232 may be patterned on the first insulating layer 260 formed on the first region 221 and the second region 222.
  • the first via 231 and the second via 232 may be formed of a metal such as aluminum, molybdenum, chromium, neodymium, tantalum, titanium, tungsten, copper, silver, gold, platinum, or an alloy thereof.
  • a metal such as aluminum, molybdenum, chromium, neodymium, tantalum, titanium, tungsten, copper, silver, gold, platinum, or an alloy thereof.
  • a first electrode 241 and a second electrode 242 are formed on the first region 221 and the second region 222 through the first via 231 and the second via 232.
  • the first electrode 241 and the second electrode 242 may be formed on the same layer, and both may be formed on the upper end of the photoelectric conversion unit.
  • the first electrode 241 is formed at the lower end of the photoelectric conversion unit and the second electrode 242 is formed at the upper end of the photoelectric conversion unit, according to another embodiment of the present invention, the first electrode 241 is formed on the upper end of the photoelectric conversion unit.
  • the second electrode 242 the process for forming the first electrode 241 and the second electrode 242 can be simplified.
  • first electrode 241 and the second electrode 242 are formed on the upper end of the photoelectric conversion unit, Inspection and measurement analysis are convenient.
  • the first electrode 241 may be a data electrode and may be connected to the first region 221 to derive an electrical signal corresponding to the electrical signal generated by the photoelectric converter, but is not limited thereto.
  • a readout IC connected to the first electrode 241 detects an electrical signal of the first electrode 241 and outputs an image signal accordingly.
  • the second electrode 242 may be a signal electrode and may be connected to the second region 222 to receive a reverse bias voltage and a forward bias voltage from an external power supply, but are not limited thereto. no.
  • the first electrode 241 and the second electrode 242 may be formed in parallel in the same direction, and may be arranged in the form of a wiring.
  • the first electrode 241 and the second electrode 242 may be formed by patterning the second insulating layer 270 formed on the first region 221 and the second region 222.
  • first electrode 241 and the second electrode 242 may be aluminum, molybdenum, chromium, neodymium, tantalum, titanium, tungsten, copper, silver or alloys thereof, indium tin oxide (ITO), or indium zinc oxide ( It may be formed of a transparent conductive material so as to transmit light such as IZO.
  • a scintillator 250 is formed on the first electrode 241 and the second electrode 242.
  • the scintillator 250 is formed in the front direction of the radiation detector so that the radiation that penetrates the object can be incident, and converts the radiation into light having a wavelength that can be absorbed by the photoelectric conversion unit, for example, visible light in the green wavelength range. You can.
  • the scintillator 250 can include solid, liquid and gas scintillator 250, and the solid scintillator 250 can include organic and inorganic scintillator 250.
  • the organic scintillator 250 the X-ray conversion efficiency is low but the reaction speed is high, and the inorganic scintillator 250 has the advantage of high light output and good linearity, and an appropriate scintillator may be used as necessary. have.
  • the scintillator 250 may be formed of a halogen compound such as thallium or sodium doped cesium iodide, or may include an oxide-based compound such as gadolinium sulfate.
  • the scintillator 250 may be attached to the entire surface of the photoelectric conversion unit in the form of a film, and may be deposited and formed by a chemical vapor deposition (CVD) method.
  • CVD chemical vapor deposition
  • the scintillator 250 may further include a reflective layer on the entire surface where the X-rays are incident.
  • the reflective layer may be formed of a material through which X-rays may be transmitted.
  • the reflective layer may be formed of a metal such as aluminum or titanium, or may be formed of an organic material such as glass, carbon, or ceramic, but is not limited thereto. It doesn't happen.
  • the reflective layer may improve the light utilization efficiency by reflecting the visible light, which is emitted out of the visible light converted by the scintillator 250 to the outside, and lost again.
  • the radiation detector according to another embodiment of the present invention may be connected to an external wiring by using a flexible printed circuit (FPC).
  • FPC flexible printed circuit
  • the radiation detector according to another embodiment of the present invention may have a flexible structure by using FPC, and thus may be formed of a flexible device.
  • the radiation detector according to another embodiment of the present invention can be attached to a human body, so that the matrix array of the radiation detector can be addressed, and the signal detected by the radiation detector at the time of irradiation is used as a position tracking for fine movement. Tracking can be enabled.
  • gold can be inserted in or around a subject (eg, cancer cell) to be measured, and then the radiation can be tracked more precisely in conjunction with the signal.
  • the FPC formed on the top and the FPC formed on the bottom can be arranged at 90 degrees, the FPC formed on the top can be used for the purpose of detecting electrical characteristics, the FPC formed on the bottom rather than the role of electrical wiring for device fixing It can be configured to have more function of fixing.
  • the FPC may be connected by using electrical wiring and soldering by forming a hole in a part.
  • the radiation detector according to another embodiment of the present invention can detect a linear signal instead of on / off by using an FPC.
  • a radiation detector according to another embodiment of the present invention as a flexible element, it is possible to manufacture a radiation detector capable of human contact.
  • the conventional method of preparing the radiation to be irradiated to the device before the patient lying down, the radiation detector on the floor and the method of preparing the position or quantity is fixed or prepared by adjusting the coordinate value like a cyber knife
  • a person was moved to a fixed position to determine a position or a fixed patient was irradiated with a third radiation to determine a position.
  • the radiation detector according to another embodiment of the present invention can directly sense the position of the patient to track the position only with a very low point of radiation at the time of pre-irradiation, and determine which part to irradiate with the value generated from the signal. This reduces pre-preparation time and makes response time very fast.
  • Figure 4 is a three-dimensional view showing a radiation detector according to another embodiment of the present invention.
  • FIG. 4 includes the same components as those of FIG. 3 except that the radiation detector according to another embodiment of the present invention has a three-dimensional structure, and thus, overlapping components will be omitted.
  • the photoelectric conversion unit may be formed on the substrate 210 in units of a plurality of pixels to form a pixel array constituting a radiographic image.
  • the second region 222 of the radiation detector according to another embodiment of the present invention may be partially formed instead of being entirely formed in the first region 221.
  • the radiation detector according to another embodiment of the present invention forms a photodiode with a photodiode having a horizontal structure to induce a current flow path to flow horizontally on the surface of the substrate, thereby reducing the size of the photoelectric converter and improving integration. Can be.
  • the radiation detector according to another embodiment of the present invention forms a second area 222 in the first area 221 to form a sensor area on a part of the radiation detector, thereby reducing the amount of radiation transmitted to the human body. Can be increased.
  • the radiation detector according to another embodiment of the present invention may include a first electrode 241 and a second electrode 242 formed in parallel to the same layer.
  • the first electrode 241 and the second electrode 242 may be formed to cross different layers, in this case, the first electrode 241 and the second electrode. It is assumed that the electrodes 242 are all formed on the upper end of the photoelectric conversion unit.
  • the radiation detector according to another embodiment of the present invention can simplify the structure of the device by arranging both the first electrode 241 and the second electrode 242 on the upper side of the photoelectric conversion unit. It is convenient.
  • the first via 231 and the second via 232 connecting the first region 221 and the second region 222, the first electrode 241, and the second electrode 242 are illustrated in a cylindrical shape. It is not limited, but may be formed in various structures.
  • 5A and 5B are images illustrating an FPC used in a radiation detector according to embodiments of the present invention.
  • the FPC 300 may be formed in a branch shape, and in the FPC 300, an electrode may be formed as an integrated wiring on an upper end of the radiation detector.
  • the radiation detector according to the embodiments of the present invention may detect the linear signal instead of on / off by using the FPC 300.
  • FPCs 310 and 320 may be disposed at the top and bottom of the radiation detector 400 according to embodiments of the present invention, and the FPCs may be disposed at the top and bottom of the radiation detector 400.
  • the 310 and 320 may be formed at 90 degrees.
  • the FPC 320 formed at the top may be used for the purpose of detecting electrical characteristics, and the FPC 310 formed at the bottom may be formed to have more functions of fixing than the role of electrical wiring for device fixing.
  • the FPC 310 formed at the bottom may be used as a back bias combined reference line.
  • the FPCs 310 and 320 may be formed to form a hole in a part thereof to be connected by using electrical wiring and soldering.
  • the radiation detector 400 may be manufactured as a flexible device using the FPC 300 to connect with an external wiring.
  • FIG. 6 is a flowchart illustrating a method of manufacturing a radiation detector according to another embodiment of the present invention.
  • FIGS. 3 and 4 includes the same components as those of FIGS. 3 and 4, and thus redundant descriptions thereof will be omitted.
  • a substrate of a first impurity type may be prepared. And forming at least one photoelectric conversion unit including a second region of a second impurity type distinct from the first region.
  • step S430 of forming a first electrode on the first region the step S440 of forming a second electrode on the second region, and the step S450 of forming a scintillator on the first electrode and the second electrode are performed. Include.
  • the method may further include forming a first via connecting the first region and the first electrode and forming a second via connecting the second region and the second electrode.
  • step S410 a substrate of a first impurity type is prepared.
  • the substrate of the first impurity type may be made of silicon carbide (SiC).
  • At least one photoelectric conversion unit including a first region of the first impurity type and a second region of the second impurity type distinct from the first region is formed on the substrate of the first impurity type.
  • the substrate of the first impurity type may itself be a first region, and a first region of the first impurity type may be formed on the substrate of the first impurity type separately including the same material as the substrate of the first impurity type.
  • the second region may be partially formed in the first region.
  • the first region of the first impurity type is an epitaxial method, a solution. It may be formed on the substrate through a coating method or a deposition method.
  • the solution coating method for forming the first region of the first impurity type is, for example, spin coating, spray coating, ultra-spray coating, electrospin coating, slot die coating. (slot die coating), gravure coating, bar coating, roll coating, dip coating, shear coating, screen printing, inkjet printing (inkjet printing) or nozzle printing (nozzle printing) may be used, and the deposition method is, for example, under reduced pressure, atmospheric pressure or pressurized conditions, sputtering, atomic layer deposition (ALD), chemical vapor deposition (CVD), Thermal evaporation, co-evaporation or plasma enhanced chemical vapor deposition (PECVD) can be used.
  • ALD atomic layer deposition
  • CVD chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • the substrate of the first impurity type may be silicon carbide (SiC), the first impurity type may be p-type, and the second region of the second impurity type may be n-type.
  • a photodiode having a PN structure or a PIN structure may be used in the photoelectric conversion unit.
  • the second region of the second impurity type may be formed by implanting ions into the first region of the first impurity type.
  • the second region of the second impurity type may be formed of B, Al, and Ga. It may include at least one selected.
  • a first electrode is formed on the first region.
  • the first electrode may be a data electrode and may be connected to the first region to induce an electrical signal corresponding to the electrical signal generated by the photoelectric converter.
  • the first electrode may be formed by patterning a second insulating layer formed on the first region.
  • the first electrode may be connected through a first via formed on the first region, and the first via may be formed by patterning a first insulating layer formed on the first region.
  • the first electrode may be a metal such as aluminum, molybdenum, chromium, neodymium, tantalum, titanium, tungsten, copper, silver, gold, platinum, or an alloy thereof or light such as indium tin oxide (ITO) or indium zinc oxide (IZO). It may be formed of a transparent conductive material to transmit the light.
  • a metal such as aluminum, molybdenum, chromium, neodymium, tantalum, titanium, tungsten, copper, silver, gold, platinum, or an alloy thereof or light such as indium tin oxide (ITO) or indium zinc oxide (IZO). It may be formed of a transparent conductive material to transmit the light.
  • a second electrode is formed on the second region.
  • the second electrode may be a signal electrode and may be connected to the second region to receive a reverse bias voltage and a forward bias voltage from an external power supply (not shown).
  • the second electrode may be formed by patterning a second insulating layer formed on the second region.
  • the second electrode may be connected through a second via formed on the second region, and the second via may be formed by patterning the first insulating layer formed on the second region.
  • the second electrode 242 is a metal such as aluminum, molybdenum, chromium, neodymium, tantalum, titanium, tungsten, copper, silver, gold, platinum, or an alloy thereof or indium tin oxide (ITO) or indium zinc oxide (IZO). It may be formed of a transparent conductive material so as to transmit light such as.
  • step S450 a scintillator is formed on the first electrode and the second electrode.
  • the scintillator may be attached in the form of a film on the first electrode and the second electrode, and may be formed by being deposited by chemical vapor deposition (CVD).
  • CVD chemical vapor deposition
  • the scintillator is formed in the front direction of the radiation detector so that radiation transmitted through the object can be incident, and can convert the radiation into light having a wavelength that can be absorbed by the photoelectric conversion unit, for example, visible light in the green wavelength range. .
  • the scintillator may be formed of a halogen compound, such as cesium iodide doped with thallium or sodium, or may include an oxide-based compound such as gadolinium sulfate.
  • a halogen compound such as cesium iodide doped with thallium or sodium
  • an oxide-based compound such as gadolinium sulfate.
  • the radiation detector according to another embodiment of the present invention may further form an FPC on the top or bottom of the radiation detector.
  • the FPC formed at the top and the FPC formed at the bottom may be arranged at 90 degrees, the FPC formed at the top may be used for detecting electrical characteristics, and the FPC formed at the bottom may be fixed rather than the role of electrical wiring for device fixing. It can be configured to have more functions.
  • the FPC may be connected by using electrical wiring and soldering by forming a hole in a part.

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Abstract

La présente invention concerne un détecteur de rayonnement et un procédé de préparation de celui-ci. Selon un mode de réalisation de la présente invention, le détecteur de rayonnement comprend : un substrat en carbure de silicium (SiC) ; un film d'isolation de gâchette formé sur le substrat en SiC ; une électrode de grille gâchette formée sur le film d'isolation de gâchette ; une région de source et une région de drain disposées des deux côtés de l'électrode de gâchette et formées dans le substrat en SiC de façon à être espacées l'une de l'autre ; une couche isolante intercouche formée sur l'électrode de gâchette ; une ligne de mots formée sur la couche isolante intercouche et reliée à l'électrode de gâchette ; une ligne de bits formée sur la couche isolante intercouche et reliée à la région de drain ; et un scintillateur disposé sur la couche isolante intercouche.
PCT/KR2017/014119 2016-12-19 2017-12-05 Détecteur de rayonnement comprenant un transistor formé sur un substrat en carbure de silicium Ceased WO2018117485A1 (fr)

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KR10-2016-0173413 2016-12-19
KR1020160173413A KR101864963B1 (ko) 2016-12-19 2016-12-19 방사선 디텍터 및 그 제조 방법
KR10-2017-0026026 2017-02-28
KR1020170026026A KR101804090B1 (ko) 2017-02-28 2017-02-28 실리콘 카바이드 기판 상에 형성된 트랜지스터를 포함하는 방사선 디텍터

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
US20220102410A1 (en) * 2020-09-29 2022-03-31 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with passivation layer for dark current reduction
TWI797348B (zh) * 2018-06-30 2023-04-01 德商羅伯特博斯奇股份有限公司 電接觸連接，用於產生電接觸連接的方法，系統

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