[go: up one dir, main page]

WO2018105674A1 - Procédé de fabrication de couche de pelage - Google Patents

Procédé de fabrication de couche de pelage Download PDF

Info

Publication number
WO2018105674A1
WO2018105674A1 PCT/JP2017/043907 JP2017043907W WO2018105674A1 WO 2018105674 A1 WO2018105674 A1 WO 2018105674A1 JP 2017043907 W JP2017043907 W JP 2017043907W WO 2018105674 A1 WO2018105674 A1 WO 2018105674A1
Authority
WO
WIPO (PCT)
Prior art keywords
release layer
substrate
resin substrate
heating
polyamic acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2017/043907
Other languages
English (en)
Japanese (ja)
Inventor
江原　和也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Priority to CN201780075610.XA priority Critical patent/CN110049827A/zh
Priority to KR1020197019447A priority patent/KR102439472B1/ko
Priority to JP2018555052A priority patent/JP6897690B2/ja
Publication of WO2018105674A1 publication Critical patent/WO2018105674A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Definitions

  • the present invention relates to a method for producing a release layer.
  • Patent Documents 1, 2, and 3 an amorphous silicon thin film layer is formed on a glass substrate, a plastic substrate is formed on the thin film layer, and then laser irradiation is performed from the glass substrate side to crystallize amorphous silicon.
  • a method of peeling a plastic substrate from a glass substrate by hydrogen gas generated along with the crystallization is disclosed.
  • Patent Document 4 a layer to be peeled (described as “transfer target layer” in Patent Document 4) is attached to a plastic film by using the techniques disclosed in Patent Documents 1 to 3, and a liquid crystal display device is formed. A method of completion is disclosed.
  • JP 10-125929 A Japanese Patent Laid-Open No. 10-125931 International Publication No. 2005/050754 JP-A-10-125930
  • This invention is made
  • the present inventor has obtained a composition comprising a polyamic acid in which one or both of the tetracarboxylic acid ends are sealed with 2-aminophenol, and an organic solvent.
  • the firing temperature at the time of forming the release layer being equal to or higher than the predetermined maximum temperature, excellent adhesion to the substrate and appropriate adhesion to the resin substrate used in the flexible electronic device and appropriate release properties are achieved.
  • the present invention has been completed by finding that a release layer can be formed.
  • a release layer-forming composition comprising a polyamic acid having both ends derived from tetracarboxylic acid and one or both of both ends sealed with 2-aminophenol and an organic solvent is formed on a substrate.
  • a method for producing a release layer comprising a step of applying and baking at a maximum temperature of 400 ° C. or higher, 2.
  • a method for producing a flexible electronic device comprising a resin substrate, characterized by using a release layer formed by using any one of production methods 1 to 4; 6).
  • a flexible electronic device comprising a step of applying a composition for forming a resin substrate on a release layer formed by using any one of production methods 1 to 4 and then firing the resin substrate at a maximum temperature of 450 ° C. to form a resin substrate Manufacturing method, 7).
  • the method for producing a release layer of the present invention it is possible to obtain a release layer having excellent adhesion to a substrate, moderate adhesion to a resin substrate, and moderate release with good reproducibility. Therefore, by implementing the manufacturing method of the present invention, in the manufacturing process of the flexible electronic device, the circuit or the like without damaging the resin substrate formed on the substrate or the circuit provided on the substrate. At the same time, the resin substrate can be separated from the substrate. Therefore, the manufacturing method of this invention can contribute to the simplification of the manufacturing process of a flexible electronic device provided with a resin substrate, the yield improvement, etc.
  • the method for producing a release layer according to the present invention comprises a polyamic acid having both ends derived from tetracarboxylic acid, one or both of which are sealed with 2-aminophenol, and an organic solvent.
  • the method further comprises a step of applying the release layer-forming composition to the substrate and baking at a maximum temperature of 400 ° C. or higher.
  • the release layer in the present invention is a layer provided immediately above a glass substrate for a predetermined purpose.
  • a flexible electronic made of a substrate and a resin such as polyimide is used.
  • the resin substrate can be easily peeled from the substrate.
  • a release layer may be used.
  • the polyamic acid used in the present invention is obtained by reacting and sealing one or both of the polymer chain ends of polyamic acid having both ends derived from tetracarboxylic acid with the amino group of 2-aminophenol. Can do. That is, in the polyamic acid obtained here, one or both of the molecular chain ends are sealed with a hydroxy group-containing phenyl group.
  • the skeleton can be different from the flexible substrate used for the upper layer, so that the function of the resulting film as a release layer can be improved.
  • a hydroxy group derived from 2-aminophenol may be present at either one of the polymer chain ends of the polyamic acid, but a hydroxy group derived from 2-aminophenol is present at both of the polymer chain ends. Preferably it is present.
  • a diamine component and an acid dianhydride component used when producing a polyamic acid from the viewpoint of improving the function as a release layer of the obtained film, a diamine component containing an aromatic diamine and an aromatic tetracarboxylic acid dicarboxylic acid are used.
  • a polyamic acid obtained by reacting an acid dianhydride component containing an anhydride is preferred.
  • the aromatic diamine is not particularly limited as long as it has two amino groups in the molecule and has an aromatic ring, but an aromatic diamine containing 1 to 5 benzene nuclei is preferable. Specific examples thereof include 1,4-diaminobenzene (p-phenylenediamine), 1,3-diaminobenzene (m-phenylenediamine), 1,2-diaminobenzene (o-phenylenediamine), 2,4-diamino.
  • Group diamines are preferred. Specifically, p-phenylenediamine, m-phenylenediamine, 2- (3-aminophenyl) -5-aminobenzimidazole, 2- (4-aminophenyl) -5-aminobenzooxol, 4,4 ′ '-Diamino-p-terphenyl and the like are preferred.
  • aromatic tetracarboxylic dianhydride is not particularly limited as long as it has two dicarboxylic anhydride sites in the molecule and has an aromatic ring, but an aromatic tetracarboxylic dianhydride contains 1 to 5 benzene nuclei.
  • aromatic tetracarboxylic dianhydrides are preferred.
  • pyromellitic dianhydride benzene-1,2,3,4-tetracarboxylic dianhydride, naphthalene-1,2,3,4-tetracarboxylic dianhydride, naphthalene-1 , 2,5,6-tetracarboxylic dianhydride, naphthalene-1,2,6,7-tetracarboxylic dianhydride, naphthalene-1,2,7,8-tetracarboxylic dianhydride, naphthalene- 2,3,5,6-tetracarboxylic dianhydride, naphthalene-2,3,6,7-tetracarboxylic dianhydride, naphthalene-1,4,5,8-tetracarboxylic dianhydride, biphenyl -2,2 ', 3,3'-tetracarboxylic dianhydride, biphenyl-2,3,3', 4'-tetracarboxylic dianhydride,
  • aromatic carboxylic dianhydrides having one or two benzene nuclei are preferred from the viewpoint of improving the function of the resulting film as a release layer.
  • an aromatic tetracarboxylic dianhydride represented by any one of formulas (C1) to (C12) is preferred, and any one of formulas (C1) to (C7) and (C9) to (C11)
  • the aromatic tetracarboxylic dianhydride shown is more preferred.
  • the diamine component used in the present invention may contain a diamine other than an aromatic diamine, and the tetracarboxylic dianhydride component used in the present invention is Further, tetracarboxylic dianhydrides other than aromatic tetracarboxylic dianhydrides may be included.
  • the amount of aromatic diamine in the diamine component is preferably 70 mol% or more, more preferably 80 mol% or more, still more preferably 90 mol% or more, still more preferably 95 mol% or more, and most preferably 100 mol%.
  • the amount of aromatic tetracarboxylic dianhydride in the tetracarboxylic acid component is preferably 70 mol% or more, more preferably 80 mol% or more, still more preferably 90 mol% or more, and still more preferably 95 mol%. Above, most preferably 100 mol%.
  • the resulting polyamic acid and 2-aminophenol are reacted to be included in the composition for forming a release layer of the present invention.
  • a polyamic acid in which the polymer chain ends are sealed with 2-aminophenol can be obtained.
  • the charging ratio of the diamine component and the tetracarboxylic dianhydride component is appropriately determined in consideration of the target molecular weight and molecular weight distribution, the type of diamine and the type of tetracarboxylic dianhydride, etc.
  • the molar ratio of the tetracarboxylic dianhydride component is preferably 1.02 to 3.0 mol, more preferably 1.07 to 2.5 mol, with respect to 1 mol of the diamine component. 2.0 mol is even more preferable.
  • the organic solvent used for synthesizing the polyamic acid and sealing the molecular chain end of the synthesized polyamic acid is not particularly limited as long as it does not adversely affect the reaction.
  • Specific examples thereof include m-cresol, 2-pyrrolidone, N— Methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-vinyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, 3-methoxy-N, N-dimethylpropylamide, 3- Ethoxy-N, N-dimethylpropylamide, 3-propoxy-N, N-dimethylpropylamide, 3-isopropoxy-N, N-dimethylpropylamide, 3-butoxy-N, N-dimethylpropylamide, 3-sec -Butoxy-N, N-dimethylpropylamide, 3-tert-butoxy-N, N-dimethyl Propyl amide, .gam
  • amides represented by formula (S1), amides represented by formula (S2) and formula ( At least one selected from amides represented by S3) is preferred.
  • R 1 and R 2 each independently represent an alkyl group having 1 to 10 carbon atoms.
  • R 3 represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms.
  • h represents a natural number, preferably 1 to 3, more preferably 1 or 2.
  • alkyl group having 1 to 10 carbon atoms examples include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, s-butyl group, t-butyl group, n-pentyl group, n- Examples include hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group and the like. Of these, alkyl groups having 1 to 3 carbon atoms are preferable, and alkyl groups having 1 or 2 carbon atoms are more preferable.
  • the reaction temperature during the synthesis of the polyamic acid may be appropriately set in the range from the melting point to the boiling point of the solvent to be used, and is usually about 0 to 100 ° C. However, it prevents imidization of the resulting polyamic acid in the solution. From the viewpoint of maintaining a high content of polyamic acid units, the temperature can be preferably about 0 to 70 ° C, more preferably about 0 to 60 ° C, and still more preferably about 0 to 50 ° C.
  • the reaction time depends on the reaction temperature and the reactivity of the raw material, it cannot be defined unconditionally, but is usually about 1 to 100 hours.
  • the reaction temperature at the time of sealing the molecular chain end of the polyamic acid may be appropriately set in the range from the melting point to the boiling point of the solvent used, as in the synthesis of the polyamic acid, and is usually about 0 to 100 ° C. From the viewpoint of securely sealing the molecular chain terminal of the synthesized polyamic acid, the temperature can be preferably about 0 to 70 ° C, more preferably about 0 to 60 ° C, and still more preferably about 0 to 50 ° C.
  • the reaction time depends on the reaction temperature and the reactivity of the raw material, it cannot be defined unconditionally, but is usually about 1 to 100 hours.
  • the weight average molecular weight of the polyamic acid obtained in this manner and having either or both of the molecular chain ends sealed with 2-aminophenol is usually about 5,000 to 500,000. From the viewpoint of improving the function of the film as a release layer, it is preferably about 6,000 to 200,000, more preferably about 7,000 to 150,000.
  • a weight average molecular weight is a polystyrene conversion value by a gel permeation chromatography (GPC) measurement.
  • the reaction solution after end-capping can be used as it is, or a solution obtained by diluting or concentrating can be used as the release layer forming composition of the present invention.
  • the solvent in this case include organic solvents used in the above-described reaction.
  • the solvent used for dilution is not particularly limited, and specific examples thereof include those similar to the specific examples of the reaction solvent for the reaction.
  • the solvent used for dilution may be used singly or in combination of two or more.
  • N, N-dimethylformamide, N, N-dimethylacetamide, N-methyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone, N-ethyl-2 are used because they dissolve polyamic acid well.
  • -Pyrrolidone and ⁇ -butyrolactone are preferred, and N-methyl-2-pyrrolidone is more preferred.
  • ethyl cellosolve, butyl cellosolve, ethyl carbitol, butyl carbitol, ethyl carbitol acetate ethylene glycol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, 1-butoxy-2-propanol, 1-phenoxy -2-propanol, propylene glycol monoacetate, propylene glycol diacetate, propylene glycol-1-monomethyl ether-2-acetate, propylene glycol-1-monoethyl ether-2-acetate, dipropylene glycol, 2- (2-ethoxy A solvent having a low surface tension such as propoxy) propanol, methyl lactate, ethyl lactate, n-propyl lactate, n
  • the concentration of the polyamic acid in the composition for forming a release layer of the present invention is appropriately set in consideration of the thickness of the release layer to be produced, the viscosity of the composition, etc., but is usually about 1 to 30% by mass, preferably It is about 1 to 20% by mass. By setting such a concentration, a release layer having a thickness of about 0.05 to 5 ⁇ m can be obtained with good reproducibility.
  • the concentration of polyamic acid is adjusted to adjust the amount of diamine and tetracarboxylic dianhydride used as raw materials for polyamic acid, and after filtering the reaction solution, the filtrate is diluted or concentrated, and the isolated polyamic acid is used as a solvent. The amount can be adjusted by, for example, adjusting the amount when dissolved in the aqueous solution.
  • the viscosity of the release layer-forming composition of the present invention is appropriately set in consideration of the thickness of the release layer to be produced, etc., and in particular, a film having a thickness of about 0.05 to 5 ⁇ m can be obtained with good reproducibility. Is usually about 10 to 10,000 mPa ⁇ s, preferably about 20 to 5,000 mPa ⁇ s at 25 ° C.
  • the viscosity can be measured using a commercially available liquid viscosity measurement viscometer, for example, with reference to the procedure described in JIS K7117-2 at a temperature of the composition of 25 ° C. .
  • a conical plate type (cone plate type) rotational viscometer is used as the viscometer, and preferably the composition temperature is 25 ° C. using 1 ° 34 ′ ⁇ R24 as a standard cone rotor. It can be measured under the condition of ° C.
  • An example of such a rotational viscometer is TVE-25L manufactured by Toki Sangyo Co., Ltd.
  • composition for forming a release layer of the present invention may contain a crosslinking agent or the like in order to improve the film strength, for example, in addition to the polyamic acid and the organic solvent.
  • the adhesiveness to the substrate is excellent by thermally imidizing polyamic acid by a baking method including a step of baking at a maximum temperature of 400 ° C. or higher.
  • a baking method including a step of baking at a maximum temperature of 400 ° C. or higher.
  • the maximum temperature at the time of firing is not particularly limited as long as it is in the range of 400 ° C. or higher and not higher than the heat resistant temperature of polyimide.
  • 450 ° C. or higher is preferable, and 500 ° C. or higher is more preferable.
  • the upper limit is usually about 550 ° C., preferably about 510 ° C.
  • the heating time varies depending on the heating temperature and cannot be defined generally, but is usually 1 minute to 5 hours.
  • the imidization rate may be in the range of 50 to 100%.
  • the temperature at the time of the said baking may include the process baked at the temperature below it.
  • the heating mode in the present invention there is a method of heating at 50 to 150 ° C., then raising the heating temperature stepwise as it is, and finally heating at 400 ° C. or higher.
  • a method of heating at 50 to 100 ° C., heating at a temperature higher than 100 ° C. to less than 400 ° C., and heating at 400 ° C. or higher can be mentioned.
  • heating mode after heating at 50 to 150 ° C., heating at 150 to 350 ° C., then heating at 350 to 450 ° C., and finally 450 to 510 ° C.
  • a method of heating at 0 ° C. can be mentioned.
  • the heating mode in consideration of the firing time, after heating at 50 to 150 ° C. for 1 minute to 2 hours, the heating temperature is increased stepwise and finally at 400 ° C. or higher for 30 minutes.
  • a method of heating for up to 4 hours can be mentioned.
  • heating is performed at 50 to 100 ° C. for 1 minute to 2 hours, heating is performed above 100 ° C. to less than 400 ° C. for 5 minutes to 2 hours, and heating is performed at 400 ° C. or higher for 30 minutes to 4 hours.
  • the technique to do is mentioned.
  • after heating at 50 to 150 ° C. for 1 minute to 2 hours after exceeding 150 ° C. to 350 ° C. for 5 minutes to 2 hours, then, exceeding 350 ° C. to 450 ° C. for 30 minutes
  • a method of heating at 450 ° C. to 510 ° C. for 30 minutes to 4 hours is mentioned.
  • the peeling layer of this invention when forming the peeling layer of this invention on a base
  • a release layer is formed in a pattern such as a dot pattern or a line and space pattern on the entire surface of the substrate.
  • substrate means what is used for manufacture of a flexible electronic device etc. by which the composition for peeling layer formation of this invention is applied to the surface.
  • the substrate examples include glass, metal (silicon wafer, etc.), slate, and the like.
  • glass is preferable because the release layer of the present invention has sufficient adhesion to it.
  • substrate surface may be comprised with the single material and may be comprised with two or more materials.
  • the substrate surface is composed of two or more materials, a certain range of the substrate surface is composed of a certain material, and the other surface is composed of other materials.
  • a dot pattern is formed on the entire surface of the substrate. There is a mode in which a material in a pattern such as a line and space pattern is present in other materials.
  • the method for applying the release layer-forming composition of the present invention to the substrate is not particularly limited, and examples thereof include cast coating, spin coating, blade coating, dip coating, roll coating, and bar coating.
  • Method, die coating method, ink jet method, printing method eg, relief printing, intaglio printing, planographic printing, screen printing, etc.
  • Examples of the appliance used for heating include a hot plate and an oven.
  • the heating atmosphere may be under air or under an inert gas, and may be under normal pressure or under reduced pressure.
  • the thickness of the release layer is usually about 0.01 to 50 ⁇ m, and preferably about 0.05 to 20 ⁇ m from the viewpoint of productivity.
  • desired thickness is implement
  • the release layer described above has excellent adhesion to a substrate, particularly a glass substrate, moderate adhesion to a resin substrate, and moderate release. Therefore, the release layer of the present invention peels the resin substrate from the substrate together with the circuit formed on the resin substrate without damaging the resin substrate of the device in the manufacturing process of the flexible electronic device. Therefore, it can be suitably used.
  • a release layer is formed on a glass substrate by the method described above.
  • a resin substrate forming solution for forming a resin substrate is applied, and this coating film is baked, so that the resin substrate fixed to the glass substrate via the release layer of the present invention is obtained.
  • the firing temperature of the coating film is appropriately set according to the type of resin and the like. In the present invention, the maximum temperature during firing is preferably 450 ° C. or higher, and preferably 480 ° C. or higher. Is more preferably 490 ° C. or higher, and further preferably 500 ° C. or higher.
  • the adhesiveness between the release layer and the substrate as the base, and the appropriate adhesiveness and peelability between the release layer and the resin substrate are further improved be able to.
  • a step of baking at a temperature lower than that may be included.
  • the heating mode at the time of preparing the resin substrate there is a method of heating at 50 to 150 ° C., then increasing the heating temperature step by step, and finally heating at 450 ° C. or higher.
  • a method of heating at 50 to 100 ° C., heating at a temperature exceeding 100 ° C. to less than 400 ° C., and heating at 450 ° C. or higher can be mentioned.
  • after heating at 50 to 100 ° C. heating is performed at over 100 ° C. to 200 ° C., then over 200 ° C. to less than 300 ° C., and heating is performed at 300 ° C. to less than 400 ° C.
  • heating at 400 to 450 ° C., and finally heating at 450 to 510 ° C. can be mentioned.
  • the heating mode in consideration of the firing time, after heating at 50 to 150 ° C. for 1 minute to 2 hours, the heating temperature is increased stepwise and finally at 450 ° C. or higher for 30 minutes.
  • a method of heating for up to 4 hours can be mentioned.
  • heating is performed at 50 to 100 ° C. for 1 minute to 2 hours, heating is performed above 100 ° C. to less than 400 ° C. for 5 minutes to 2 hours, and heating is performed at 450 ° C. or higher for 30 minutes to 4 hours.
  • the technique to do is mentioned.
  • the resin substrate covers the entire release layer, and the substrate is formed with an area larger than the area of the release layer.
  • the resin substrate include a resin substrate made of polyimide, which is a typical resin substrate for flexible electronic devices, and examples of the resin solution for forming the resin substrate include a polyimide solution and a polyamic acid solution.
  • the method for forming the resin substrate may follow a conventional method.
  • a desired circuit is formed on the resin substrate fixed to the base via the release layer of the present invention, and then the resin substrate is cut along the release layer, for example. It peels from a peeling layer, and a resin substrate and a base
  • the LLO method is characterized in that light having a specific wavelength, for example, light having a wavelength of 308 nm, is irradiated from the surface opposite to the surface on which a circuit or the like is formed from the glass substrate side.
  • the irradiated light passes through the glass substrate, and only the polymer (polyimide) in the vicinity of the glass substrate absorbs this light and evaporates (sublimates).
  • the polymer polyimide
  • the release layer of the present invention has a feature of sufficiently absorbing light having a specific wavelength (for example, 308 nm) that enables application of the above LLO method, and therefore can be used as a sacrificial layer of the LLO method. Therefore, when a desired circuit is formed on a resin substrate fixed to a glass substrate through a release layer formed by using the composition according to the present invention, and then an LLO method is performed to irradiate a light beam of 308 nm. Only the release layer absorbs this light and evaporates (sublimates). Thereby, the release layer is sacrificed (acts as a sacrifice layer), and the resin substrate can be selectively peeled from the glass substrate.
  • a specific wavelength for example, 308 nm
  • NMP N-methylpyrrolidone
  • BCS butyl cellosolve
  • p-PDA p-phenylenediamine
  • 2AP 2-aminophenol
  • BPDA 3,3-4,4-biphenyltetracarboxylic dianhydride
  • PMDA pyromerit Acid dianhydride
  • Mw polymer weight average molecular weight
  • Mw polymer weight average molecular weight
  • Mw molecular weight distribution
  • a GPC apparatus Shidex (registered trademark) columns KF803L and KF805L
  • dimethylformamide was measured under the conditions of a flow rate of 1 ml / min and a column temperature of 50 ° C.
  • Mw was made into the polystyrene conversion value.
  • composition for forming release layer [Example 1-1] BCS and NMP were added to the reaction solution obtained in Synthesis Example L1, and diluted such that the polymer concentration was 5 wt% and BCS was 20 mass%, to obtain a release layer forming composition.
  • Examples 1-2 to 1-3 A composition for forming a release layer was obtained in the same manner as in Example 1-1 except that the reaction solutions obtained in Synthesis Examples L2 to L3 were used in place of the reaction solution obtained in Synthesis Example L1, respectively. It was.
  • Example 1-1 A composition for forming a release layer was obtained in the same manner as in Example 1-1, except that the reaction solution obtained in Comparative Synthesis Example HL1 was used instead of the reaction solution obtained in Synthesis Example L1. .
  • Example 2-1 Production of release layer and resin substrate [Example 2-1] Using a spin coater (conditions: about 3,000 rpm for about 30 seconds), the release layer forming composition L1 obtained in Example 1-1 was used as a glass substrate of 100 mm ⁇ 100 mm glass substrate (hereinafter the same). It was applied on top. The obtained coating film was heated at 100 ° C. for 2 minutes using a hot plate, and then heated at 300 ° C. for 30 minutes using an oven, and the heating temperature was raised to 400 ° C. (10 ° C./min. And then heated to 400 ° C. for 30 minutes, further heated to 500 ° C. (10 ° C./min), and heated at 500 ° C. for 10 minutes to form a release layer having a thickness of about 0.1 ⁇ m on the glass substrate. A glass substrate with a release layer was obtained. During the temperature increase, the film-coated substrate was not removed from the oven but heated in the oven.
  • the resin substrate forming composition S2 was applied on the release layer (resin thin film) on the glass substrate obtained above. Then, the obtained coating film was heated at 80 ° C. for 30 minutes using a hot plate, and then the atmosphere was changed to a nitrogen atmosphere using an oven, followed by heating at 140 ° C. for 30 minutes, and the heating temperature was raised to 210 ° C. Temperature (2 ° C./min, the same applies hereinafter), 210 ° C. for 30 minutes, heating temperature to 300 ° C., 300 ° C. for 30 minutes, heating temperature to 400 ° C., 400 ° C. for 30 minutes, The heating temperature was raised to 500 ° C. and heated at 500 ° C.
  • Examples 2-2 to 2-3 Except that the release layer-forming composition L2 and L3 obtained in Examples 1-2 to 1-3 were used in place of the release layer-forming composition L1 obtained in Example 1-1, respectively.
  • a release layer and a polyimide resin substrate were formed to obtain a glass substrate with a release layer and a resin substrate / glass substrate with a release layer.
  • Example 2-1 The same procedure as in Example 2-1 except that the release layer forming composition HL1 obtained in Comparative Example 1-1 was used instead of the release layer forming composition L1 obtained in Example 1-1.
  • a release layer and a polyimide resin substrate were formed, and a glass substrate with a release layer and a glass substrate with a resin substrate / release layer were obtained.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

L'invention fournit un procédé de fabrication de couche de pelage qui inclut une étape au cours de laquelle une composition pour formation de couche de pelage contenant un solvant organique, et un acide polyamique à deux terminaisons dérivées d'acide tétracarboxylique, l'une ou les deux terminaisons étant scellées par un 2-amino-phénol, est appliquée sur un corps de base, et cuite à une température maximale de 400°C ou plus.
PCT/JP2017/043907 2016-12-08 2017-12-07 Procédé de fabrication de couche de pelage Ceased WO2018105674A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201780075610.XA CN110049827A (zh) 2016-12-08 2017-12-07 剥离层的制造方法
KR1020197019447A KR102439472B1 (ko) 2016-12-08 2017-12-07 박리층의 제조 방법
JP2018555052A JP6897690B2 (ja) 2016-12-08 2017-12-07 剥離層の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016238647 2016-12-08
JP2016-238647 2016-12-08

Publications (1)

Publication Number Publication Date
WO2018105674A1 true WO2018105674A1 (fr) 2018-06-14

Family

ID=62491565

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/043907 Ceased WO2018105674A1 (fr) 2016-12-08 2017-12-07 Procédé de fabrication de couche de pelage

Country Status (5)

Country Link
JP (1) JP6897690B2 (fr)
KR (1) KR102439472B1 (fr)
CN (1) CN110049827A (fr)
TW (1) TWI823841B (fr)
WO (1) WO2018105674A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160023436A1 (en) * 2014-07-22 2016-01-28 Brewer Science Inc. Polyimides as laser release materials for 3-d ic applications
JP2016068401A (ja) * 2014-09-30 2016-05-09 東レ株式会社 樹脂積層体、それを用いた有機ｅｌ素子基板、カラーフィルター基板及びそれらの製造方法ならびにフレキシブル有機ｅｌディスプレイ
WO2016129546A1 (fr) * 2015-02-10 2016-08-18 日産化学工業株式会社 Composition pour la formation d'une couche antiadhésive

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6071667A (en) * 1995-04-13 2000-06-06 Hitachi Chemical Co., Ltd. Photosensitive resin composition containing a photosensitive polyamide resin
JP4619461B2 (ja) 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜デバイスの転写方法、及びデバイスの製造方法
JP4619462B2 (ja) 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
JP3809681B2 (ja) 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
GB0327093D0 (en) 2003-11-21 2003-12-24 Koninkl Philips Electronics Nv Active matrix displays and other electronic devices having plastic substrates
KR20120088713A (ko) * 2009-09-24 2012-08-08 타타 스틸 리미티드 금속성 기재 상의 폴리에테르이미드 코팅의 제조 방법
JP5834930B2 (ja) * 2011-09-09 2015-12-24 宇部興産株式会社 ポリイミド前駆体水溶液組成物、及びポリイミド前駆体水溶液組成物の製造方法
US20160194542A1 (en) * 2013-10-23 2016-07-07 Nippon Kayaku Kabushiki Kaisha Polyimide resin composition, and heat-conductive adhesive film produced using same
KR102749726B1 (ko) * 2015-03-31 2025-01-07 닛산 가가쿠 가부시키가이샤 박리층 형성용 조성물 및 박리층
CN113292853B (zh) * 2015-04-17 2024-04-05 旭化成株式会社 树脂组合物、聚酰亚胺树脂膜及其制造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160023436A1 (en) * 2014-07-22 2016-01-28 Brewer Science Inc. Polyimides as laser release materials for 3-d ic applications
JP2016068401A (ja) * 2014-09-30 2016-05-09 東レ株式会社 樹脂積層体、それを用いた有機ｅｌ素子基板、カラーフィルター基板及びそれらの製造方法ならびにフレキシブル有機ｅｌディスプレイ
WO2016129546A1 (fr) * 2015-02-10 2016-08-18 日産化学工業株式会社 Composition pour la formation d'une couche antiadhésive

Also Published As

Publication number Publication date
KR20190094197A (ko) 2019-08-12
TWI823841B (zh) 2023-12-01
KR102439472B1 (ko) 2022-09-05
JPWO2018105674A1 (ja) 2019-10-24
JP6897690B2 (ja) 2021-07-07
CN110049827A (zh) 2019-07-23
TW201829668A (zh) 2018-08-16

Similar Documents

Publication Publication Date Title
JP6939941B2 (ja) フレキシブル電子デバイスの製造方法
KR102602473B1 (ko) 박리층 형성용 조성물
WO2018025954A1 (fr) Composition pour former une couche antiadhésive pour un substrat transparent en résine
JP6962323B2 (ja) 剥離層形成用組成物
WO2021125308A1 (fr) Composition formant une couche de libération
WO2016158988A1 (fr) Composition pour la formation d'une couche de libération, et couche de séparation
JP7088023B2 (ja) 剥離層の製造方法
KR102500563B1 (ko) 기판 보호층 형성용 조성물
JP6897690B2 (ja) 剥離層の製造方法
WO2018105676A1 (fr) Procédé de fabrication de couche de pelage

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17879538

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2018555052

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20197019447

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 17879538

Country of ref document: EP

Kind code of ref document: A1