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WO2018199453A1 - Composition de suspension pour polissage mécano-chimique - Google Patents

Composition de suspension pour polissage mécano-chimique Download PDF

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Publication number
WO2018199453A1
WO2018199453A1 PCT/KR2018/002206 KR2018002206W WO2018199453A1 WO 2018199453 A1 WO2018199453 A1 WO 2018199453A1 KR 2018002206 W KR2018002206 W KR 2018002206W WO 2018199453 A1 WO2018199453 A1 WO 2018199453A1
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WO
WIPO (PCT)
Prior art keywords
slurry composition
polishing
weight
film
chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2018/002206
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English (en)
Korean (ko)
Inventor
박혜정
이민건
박창용
박민성
진성훈
이구화
박종대
김재현
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongjin Semichem Co Ltd
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020180020654A external-priority patent/KR102611598B1/ko
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Priority to CN201880026333.8A priority Critical patent/CN110536940B/zh
Priority to US16/604,035 priority patent/US20200048498A1/en
Publication of WO2018199453A1 publication Critical patent/WO2018199453A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment

Definitions

  • the present invention relates to a slurry composition for chemical-mechanical polishing, and more particularly, to a slurry composition for chemical-mechanical polishing, including a phosphate compound as a selectivity control agent, which enables to control the selection ratio of a polishing object and a polishing method using the same. .
  • Semiconductor devices are highly integrated; As densification and multi-layer structure are made, finer pattern formation techniques are used, and thus, the surface structure of the semiconductor device is complicated, and the level of the interlayer films is further increased.
  • a step occurs in the interlayer films, process defects may occur in a semiconductor device manufacturing process, so it is important to minimize the step. Therefore, in order to reduce the step difference of the interlayer films, a planarization technique of a semiconductor substrate is used.
  • a reactive subsequent etching method or a chemical mechanical polishing method is used to remove a metal such as tungsten in a semiconductor process. Since the semi-ungionic ion etching method has a problem that residues are generated on the semiconductor substrate after the process, a chemical mechanical polishing method is more frequently used.
  • a semiconductor substrate is polished using a water-soluble slurry composition containing an abrasive or the like.
  • the slurry composition comprises an insulating film, a metal film, an insulating film and a metal film
  • polishing rate ratio for each film to be polished is different.
  • An object of the present invention is to provide a slurry composition for chemical-mechanical polishing, by including a specific polishing selectivity adjusting agent, it is possible to easily control the polishing rate of the insulating film of the semiconductor substrate than the conventional polishing selectivity.
  • the present invention provides a method for polishing a semiconductor substrate using the slurry composition capable of polishing the insulating film and the metal film of the semiconductor substrate alone or simultaneously.
  • a compound having at least one phosphate group selected from the group consisting of a) a cyclic compound having a phosphate group, an inorganic compound having a phosphate group and a metal compound having a phosphate group, b) a tertiary amine compound, and c) a mixture thereof
  • a polishing selectivity regulator selected from the group.
  • the polishing selectivity adjusting agent may be a cyclic compound having a phosphate group.
  • the polishing selectivity adjusting agent may be a silicon nitride film polishing selector used to control the polishing rate of the silicon nitride film.
  • C) may include the compound of a ) and b) the tertiary amine compound in an increase ratio of 1: 0.25 to 1: 5.
  • the slurry composition according to an embodiment of the present invention may further include a catalyst.
  • Slurry composition according to an embodiment of the present invention is one or more pH adjusters It may further include. .
  • the slurry composition according to one embodiment of the present invention may further include one or more biosides.
  • the slurry composition according to one embodiment of the present invention may further include one or more reaction agents.
  • the slurry composition according to an embodiment of the present invention may further include water, alcohol or a mixture thereof.
  • the slurry composition according to one embodiment of the present invention may further include one or more oxidizing agents.
  • the ring compound having the phosphate group is monophosphate of inosi, biphosphate of inosi , triphosphate of inosi .
  • Inosi may be one or more selected from the group consisting of pentakisphosphate inosi, nucleophosphate glucose 1-phosphate and glucose 6-phosphate.
  • the tertiary amine compound may be at least one selected from the group consisting of trimethylamine, triethylamine, tributylamine and tripropylamine.
  • the abrasive may comprise from 01 to 10% by weight based on the total weight of the total slurry composition.
  • the catalyst may comprise 0.00001 to 1 weight percent based on the total weight of the total slurry composition.
  • the polishing selectivity adjusting agent is whole. And from 0.0001 to 10% by weight based on the total weight of the slurry composition.
  • the slurry composition for chemical-mechanical polishing is 0.01 to 10% by weight of the abrasive, 0.0001 to 10% by weight of the polishing selectivity adjusting agent based on the total weight of the total slurry composition. 0.00001 to 1 wt% of catalyst, 0.0005 to 5 wt% of pH adjuster, Bioside 0.00 . 01 to 0.01 weight% and the balance of water.
  • the slurry composition may further include 0.0001 to 1% by weight of the reaction regulator based on the total weight of the entire slurry composition.
  • the slurry composition is based on the total weight of the total slurry composition It may further comprise 0.005 to 10% by weight.
  • the semiconductor substrate polishing method according to another embodiment of the present invention using the above-described chemical-mechanical polishing slurry composition.
  • the insulating film may include a silicon nitride film, a silicon oxide film, or a silicon nitride film and a silicon oxide film.
  • the metal film may be a tungsten film.
  • a silicon nitride film or a silicon oxide film When the insulating film is a silicon nitride film or a silicon oxide film in the step b), a silicon nitride film or a silicon oxide film; And a polishing selectivity of the metal film; may be 1: 3 or more.
  • the insulating film in the step b) comprises a silicon nitride film and a silicon oxide film.
  • the polishing selectivity of the silicon nitride film: silicon oxide film: metal film may be 1: 0.5 to 2: 3 to 10.
  • the slurry composition of the present invention is a metal containing an insulating film or tincture containing a silicon nitride film, a silicon oxide film, etc. of a semiconductor substrate by using a compound having a phosphate group or optionally further comprising a tertiary amine compound as a polishing selectivity control agent
  • the film can be polished alone or simultaneously, and both can exhibit excellent effects. That is, using the slurry composition of the present invention, the compound having a phosphate group may selectively increase the polishing rate of the insulating film, in particular, the polishing rate of the silicon nitride film.
  • the tertiary amine compound which can be used as the polishing selectivity adjusting agent in the present invention can further increase the polishing rate of the insulating film, in particular, the silicon oxide film polishing rate.
  • the polishing target film consisting of three kinds such as silicon nitride film: silicon oxide film and tungsten can be simultaneously polished. These selection ratios can also be easily adjusted.
  • CMP composition chemical-mechanical polishing slurry composition
  • the present invention is to propose a slurry composition that can control the selectivity ratio and the method of other semiconductor substrate using the same.
  • the insulating film or the metal film can be polished alone or at the same time.
  • the insulating film is one kind of insulating film made of a silicon nitride film or a silicon oxide film formed on a semiconductor substrate, and made of a silicon nitride film and a silicon oxide film.
  • the metal film may include at least one metal film, more specifically, a tungsten film formed on a semiconductor substrate.
  • the present invention uses the compounds of a) to c) described above as polishing selectivity regulators in slurry compositions.
  • the compound of a) uses a compound having a phosphate group, and specifically, at least one selected from three components is used as described above. More specifically, the most effective polishing selectivity modifier relative to the same content may be a ring compound having a phosphate group, which may include an aliphatic ring compound.
  • the polishing selectivity adjusting agent of a) increases the silicon nitride film polishing rate more effectively among the insulating films.
  • the polishing selectivity adjusting agent may be a silicon nitride film polishing selector used to control the polishing rate of the silicon nitride film.
  • the selectivity control agent may further improve the polishing rate of the silicon nitride film according to the used content.
  • the cyclic compound having a phosphate group may have 4 to 7 carbon atoms.
  • the ring compound having a phosphate group used as the polishing selectivity adjusting agent may be an aliphatic ring compound. Specifically, inosi monophosphate, inosi biphosphate, inosi triphosphate, inosi tetraphosphate, inosi pentakiphosphate, inosi nucleophosphate, glucose 1-phosphate, and glucose 6 -At least one selected from the group consisting of phosphates:
  • Inosi monophosphate inosi tol monophosphate
  • Inosi bisphosphate inos i tol bi sphosphate, IP 2
  • Inosi triphosphate inositol tr isphosphate, IP 3
  • IP 4 Inositol tetraphosphate
  • Inositol pent ak isphosphate.IP 5 Inosi hexaphosphate (inositol hexaphosphate, IP 6 ) (phytic acid or phytate)
  • MAP monoammonium phosphate
  • DSP diammonium phosphate
  • TSP triammonium phosphate
  • the metal compound having a phosphate group was monosodium phosphate (MSP), disodium phosphate (DSP), trisodium phosphate (TSP), and the like. Can be used.
  • the polishing selectivity adjusting agent may use the tertiary amine compound of b).
  • the polishing selectivity adjusting agent of the present invention may be selected from a compound compound having a) a phosphate group. It may be a mixture of one or more compounds and b) tertiary amines.
  • the tertiary amine compound As a polishing selectivity control agent, it is possible to improve the removal rate of the silicon oxide film.
  • the insulating film is made of a silicon nitride film and a silicon oxide film, it can exhibit an advantage of controlling the polishing rate of the silicon nitride film and the silicon oxide film at the same time.
  • the tertiary amine compound includes trimethylamine, triethylamine, tributylamine, tripropylamine, and the like, and any one or more selected from these may be used.
  • the primary amine compound or the secondary amine compound is used instead of the tertiary amine compound, it is difficult to increase the polishing rate of the metal film (eg, silicon oxide film) of the semiconductor substrate.
  • the metal film eg, silicon oxide film
  • the dispersibility of silica used as an abrasive may be lowered, thereby causing a problem of precipitation.
  • c) may include a) a compound having a phosphate group and b) a tertiary amine compound in a weight ratio of 1: 0.25 to 1: 5.
  • weight ratio of the compound having a phosphate group of a) and the tertiary amine compound of b) is 1: 0.25
  • the selectivity of the polishing rate of the silicon oxide film is lower than that of the silicon nitride film.
  • the ratio is out of 1: 5
  • the selectivity of the smoke rate of the silicon oxide film to the silicon nitride film is excessively large, which may cause erosion.
  • the ring compound having a phosphate group of a) and the primary tertiary amine compound of b) may be included in a weight ratio of 1: 0.7 to 1: 3.
  • the selectivity ratio of the silicon oxide film to the silicon nitride film is 1: 0.5 to 2 I can regulate it.
  • the above range is not satisfied, it is difficult to control the polishing selectivity of the silicon nitride film and the silicon oxide film.
  • any one compound selected from inorganic compounds having a phosphate group and metal compounds having a phosphate group; And the tertiary amine compound may be included in a layer ratio of 1: 0.25 to 1: 5.
  • the content of the polishing selectivity modifier may be 0.0001 to 10% by weight, specifically 0.0001 to 5% by weight, more specifically 0.0001 to 1% by weight and most specifically 0.0001 to 0.5% by weight, based on the total weight of the slurry composition. .
  • the polishing selectivity adjusting agent when using the tertiary amine compound, it may be preferable to use from 0.0001 to 5% by weight based on the total weight of the total composition, and more preferably from 0.0001 to 0.5% by weight. If the content of the polishing selectivity adjusting agent is less than 0.0001% by weight, there is a problem that the polishing rate control effect is insufficient, and when the content of the polishing selector is outside 10% by weight, the polishing rate no longer increases.
  • the slurry composition according to an embodiment of the present invention is a slurry composition further comprising an abrasive together with the above-described polishing selectivity adjusting agent.
  • colloidal silica or fumed silica may be used among conventional abrasives that perform mechanical polishing.
  • the amount of the abrasive may be from 0.01 to 10% by weight, specifically 1 to 8% by weight, based on the total weight of the total composition. If the content of the abrasive is less than 0.01% by weight, there is a problem that the polishing rate is lowered, and when the content is greater than 10% by weight, excessive scratches are generated.
  • the slurry composition according to an embodiment of the present invention may further include a catalyst.
  • the catalyst may improve the polishing rate of a metal film such as tungsten, and specifically, at least one selected from the group consisting of iron salts such as iron nitrate and iron chloride and nano ferrosilicon (FeSi) may be used.
  • the content of the catalyst may be 0.00001 to 1% by weight, specifically 0.0001 to 0.5% by weight, based on the total weight of the slurry composition. If the content of the catalyst is less than 0.00001 weight 3 ⁇ 4>, there is a problem that the polishing rate of the metal film is lowered, and if the content of the catalyst exceeds 1% by weight, there is a problem that the polishing rate is uneven because of excessive chemical reactivity.
  • the slurry composition according to an embodiment of the present invention may further include one or more pH adjusters.
  • the pH, range of the slurry composition may be 1 to 4, specifically 1.5 to 3.5. Therefore, the present invention can adjust the pH of the slurry composition using an acidic or basic pH adjusting agent in reaction.
  • the pH range of the slurry composition is lower than 1, the acidity is too low, so that there is a problem in handling. If the pH range is higher than 4, the polishing rate of some metal films may decrease.
  • the pH adjusting agent (pH adj ust i ng agent) is used to adjust the pH of the slurry composition.
  • pH adj ust i ng agent is used to adjust the pH of the slurry composition.
  • any one selected from the group consisting of an acidic regulator and a basic regulator it can be adjusted to the above pH range having good handleability and excellent polishing rate.
  • the acidic regulators include nitric acid, hydrochloric acid, sulfuric acid, and the like
  • basic regulators include potassium hydroxide, sodium hydroxide, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, and more specifically tetramethylammonium hydroxide, tetrabutylammonium hydroxide, and the like.
  • kalm and natrum are metal impurity (meta l mpur i ty) management items, which can cause wafer contamination and defects, so the amount of use is limited.
  • the content of the i) H regulator is based on the total weight of the slurry composition
  • the slurry composition according to an embodiment of the present invention may further include at least one biocide (Bioc ide) ⁇
  • the bioside is used to prevent microbial contamination, and for example, polynuclear methylene guanidine (PHMG) or isothiazolinone-based compound may be used.
  • PHMG polynuclear methylene guanidine
  • isothiazolinone-based compound examples include methyl isothiazolinone (MIT), chloromethyl isothiazolinone (CMIT), and 1,2-benzoisothiazole-3 (-one ((1 , 2- benzi sothi azol-3 (2 ⁇ )-one: Benzi sothiazol inone (BIT) can be used one or more selected from the group consisting of.
  • the content of the bioside may be 0.0001 to 0.01 wt%, specifically 0.001 to 0.05 wt%, based on the total weight of the slurry composition. If the content of the bioside is less than 0.0001% by weight, microorganisms occur due to insufficient bactericidal action. There is a problem and there is a problem that the slurry performance may change if it exceeds 0.01% by weight.
  • the slurry composition according to an embodiment of the present invention may further include at least one reaction agent.
  • the reaction regulator malonic acid, phosphoric acid, potassium iodide, and the like may be used.
  • the content of the reaction agent may be 0001 to 1% by weight, specifically 0.001 to 0.5% by weight, based on the total weight of the slurry composition. If the content of the reaction regulator is less than 0.0001% by weight there is a problem that the non-uniformity of the substrate is increased, if the content of more than 1% by weight has a problem that the polishing rate is lowered.
  • the slurry composition according to an embodiment of the present invention may further include water, alcohol (R0H) or a combination thereof as the remaining components to satisfy 100% by weight of the composition, except for the above-described components.
  • the slurry composition of the present invention may be a water-soluble composition. remind The alcohol may be a straight or branched alcohol having 2 to 10 carbon atoms.
  • the slurry composition may further include an organic solvent as necessary. In this case, it can be used as a dissolution aid for components that are difficult to dissolve in water, or can be used to improve the wettability of the slurry composition on the film to be polished.
  • the slurry composition according to an embodiment of the present invention may further include an oxidizing agent.
  • the oxidant may further include when the polishing target includes tungsten.
  • the oxidizing agent may be stored in a state contained in the slurry composition, or may be stored in the form of an additive liquid by dividing with the remaining slurry composition including the abrasive to prevent the stability of the slurry composition from deteriorating.
  • the oxidizing agent may be blended with the remaining slurry composition prior to application to the polishing target film or applied to the polishing target film independently of the slurry composition during polishing.
  • Specific examples that can be used as the oxidizing agent may be selected from, but are not limited to, hydrogen peroxide, potassium iodide, potassium permanganate, ammonia, amine compounds, ammonium compounds, nitrate compounds, and combinations thereof.
  • the content of the oxidant may be 0.005 to 10% by weight, specifically 0.2 to 5% by weight, based on the total weight of the slurry composition.
  • the chemical-mechanical polishing slurry composition may include 0.01 to 10% by weight of abrasive, 0.0001 to 10% by weight of polishing selectivity regulator, 0.00001 to 1% by weight of catalyst, H based on the total weight of the total slurry composition.
  • a slurry composition for chemical-mechanical polishing comprising 0.0005-5% by weight of modifier, 0.0001-0. 1% by weight of bioside, and the balance of water can be provided.
  • the slurry composition is a total increase in the total slurry composition On the basis of the reaction regulator may further comprise 0.0001 to 1% by weight.
  • the slurry composition is based on the total amount of the total slurry composition of the oxidizing agent
  • polishing selectivity control agent 0.0001 to 10% by weight
  • catalyst 0.00001 to 1% by weight
  • pH regulator 0.0005 to 5% by weight
  • bioside 0.0001 to 0.01 weight reaction regulator 0.0001 by 1 weight
  • a slurry composition for chemical-mechanical polishing comprising%, and the balance of water can be provided. Polishing method of semiconductor substrate
  • the insulating film may include a silicon nitride film, a silicon oxide film, or a silicon nitride film and a silicon oxide film.
  • the metal film may include a tungsten film.
  • the catalyst and the oxidant may not be included in the polishing slurry composition.
  • the chemical-mechanical polishing slurry composition of the present invention contains the above-described specific polishing selectivity regulator in a certain amount, and thus, the polishing rate is higher than conventional.
  • the insulating film or metal film of one kind of semiconductor substrate may be polished to increase, or the insulating film and metal film of one or more types may be polished simultaneously.
  • the slurry composition of the present invention is used to polish a selected one of a silicon nitride film, a silicon oxide film, or a tungsten film of a semiconductor substrate, or simultaneously polish an insulating film and a metal film composed of two or three selected ones, Can improve. At this time.
  • the slurry composition is used to polish a metal film including a tungsten film, the above-mentioned oxidizing agent is used. May be added to the slurry composition immediately before
  • the slurry composition for tungsten polishing may be manufactured and stored as a product with 100% of a composition containing no hydrogen peroxide, and additionally mixed with hydrogen peroxide immediately before polishing (CMP).
  • CMP hydrogen peroxide immediately before polishing
  • the polishing target is not limited, but each of an insulating film such as a silicon oxide film (Si0 2 ), a silicon nitride film (Si 3 N 4 ) or a metal film such as a tungsten (W) film forming a semiconductor substrate, Consisting of these
  • Two or three kinds of films can be polished at the same time.
  • the polishing selectivity is 1: 3 or more, or 1: 3 to
  • the polishing selectivity of the silicon nitride film: silicon oxide film: metal film may be 1: 0.5 to 2: 3 to 10.
  • polishing conditions and the polishing rate measuring method of the metal film of the semiconductor substrate for Examples and Comparative Examples are as follows.
  • polishing equipment Mirra 3400 (Applied Materials)
  • Polishing condition Proceed by the method of Table 1.
  • Polishing Pad I C-1000 (Rohm & Haas)
  • Thickness (Polishing Speed) Measuring Equipment (Thickness Unit: Angstrom, Symbol: A) Tungsten Film: CMT-2000 (4-point probe, Changmin Tech.)
  • Polishing speed thickness before CMP-thickness after CMP
  • Abrasives 200 nm humed silica
  • catalysts iron nitrate, ferrosilicon
  • polishing selectivity regulators components in Table 2
  • biosides Metals in Table 2
  • the pH of the slurry composition was adjusted to 2 using nitric acid and TMAH as pH adjusting agents. Then, before polishing the semiconductor film, 3% by weight of hydrogen peroxide at a concentration of 31% was further added to the pH-adjusted composition to prepare the slurry compositions of Examples 1-11.
  • the content and composition of the abrasive and the polishing selectivity adjusting agent were as shown in Table 2 below.
  • the structure which does not contain the polishing selectivity regulator was made into the comparative example 1.
  • the slurry composition includes a compound having a phosphate group as the polishing selectivity regulator as in Examples 1 to 11, the silicon nitride film polishing rate was increased while the silicon nitride film polishing rate was increased as its content was increased. It did not affect speed.
  • Examples 1 to 6 using the cyclic compound had the most excellent effect of improving the silicon nitride film polishing rate compared to the same content.
  • Examples 7 to 11 using an inorganic compound having a phosphate group or a metal compound having a phosphate group similar improvement effects were exhibited at the same content.
  • an inorganic compound is more preferable than a metal compound.
  • Comparative Example 1 does not include the phosphate-containing compound of the present application showed that the polishing rate of the silicon nitride film is lower than the Example results. And, Comparative Examples 2 to 3 can be seen that the result is poor beyond the content range of the polishing selectivity control agent of the present invention.
  • bioside Metal i sothi azo l inone
  • distilled water distilled water
  • the content of biosides in the slurry composition is 0.01% by weight.
  • Abrasives 70 ⁇ colloidal silica
  • catalysts iron nitrate, ferrosilicone
  • polishing selectivity regulators K ingredient of Table 6
  • biosides Metal i sothi azo l inone
  • distilled water was mechanical stirrers (Mechani cal st i rrer) and stirred.
  • the content of biosides in the slurry composition is 0.01% by weight.
  • the pH of the slurry composition was adjusted to 3 using nitric acid and TMAH as the P H regulator. Then, by producing a 31% prior to grinding the semiconductor film is a common combined Comparative Examples 7 to 8 and Examples 12 to 18.
  • the slurry composition of the "3% by weight aqueous hydrogen peroxide of concentration in addition to the above pH adjustment composition, the above-described The polishing experiment was carried out by the method. In addition, the slurry composition which did not use the grinding
  • Example 12 Silica 2 hexaphosphate ferrosilicon 0.004 3 tributylamine 0.015
  • Example 16 Silica 2 hexaphosphate ferrosilicon 0.004 3 tributylamine 0.3
  • Example 18 Silica 2 phosphate ferrosilicon 0.004 3 triethylamine 0.18
  • Table 7 shows the results of polishing rate and selectivity.
  • a) at least one compound selected from the group consisting of a) a cyclic compound having a phosphate group, an inorganic compound having a phosphate group, and a metal compound having a phosphate group and b) a tertiary amine compound as a polishing selectivity adjusting agent is 1: 0.25.
  • a weight ratio of 1: 1 it can be seen that exhibits an excellent effect.

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Abstract

La présente invention concerne une composition de suspension pour le polissage mécano-chimique. Plus particulièrement, la présente invention concerne une composition de suspension pour le polissage mécano-chimique qui utilise un composé ayant des groupes phosphate comme régulateur de sélectivité du polissage et éventuellement en outre utilise un composé d'amine tertiaire conjointement au régulateur de sélectivité du polissage, de sorte qu'il est possible de polir, soit seul soit en combinaison un film isolant tel qu'un film de nitrure de silicium ou un film métallique tel que du tungstène contrairement à l'état de la technique, et particulièrement, pour réguler facilement son taux de polissage, réduisant ainsi une étape d'intercouche d'un élément semi-conducteur ; et un procédé de polissage d'un substrat semi-conducteur l'utilisant.
PCT/KR2018/002206 2017-04-27 2018-02-22 Composition de suspension pour polissage mécano-chimique Ceased WO2018199453A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201880026333.8A CN110536940B (zh) 2017-04-27 2018-02-22 用于化学机械研磨的浆料组合物
US16/604,035 US20200048498A1 (en) 2017-04-27 2018-02-22 Chemical mechanical polishing slurry composition

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2017-0054609 2017-04-27
KR20170054609 2017-04-27
KR10-2018-0020654 2018-02-21
KR1020180020654A KR102611598B1 (ko) 2017-04-27 2018-02-21 화학-기계적 연마용 슬러리 조성물

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WO2018199453A1 true WO2018199453A1 (fr) 2018-11-01

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JP2004300348A (ja) * 2003-03-31 2004-10-28 Fujimi Inc 研磨用組成物
KR20090002501A (ko) * 2007-06-29 2009-01-09 제일모직주식회사 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물 및 이를이용한 연마 방법
KR20100070598A (ko) * 2008-12-18 2010-06-28 제일모직주식회사 금속 배선 연마용 ｃｍｐ 슬러리 조성물
JP2012209567A (ja) * 2009-12-10 2012-10-25 Hitachi Chem Co Ltd Ｃｍｐ研磨液、基板の研磨方法及び電子部品
KR20170021321A (ko) * 2014-06-25 2017-02-27 캐보트 마이크로일렉트로닉스 코포레이션 콜로이드성 실리카 화학적-기계적 연마 조성물

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JP2004300348A (ja) * 2003-03-31 2004-10-28 Fujimi Inc 研磨用組成物
KR20090002501A (ko) * 2007-06-29 2009-01-09 제일모직주식회사 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물 및 이를이용한 연마 방법
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