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WO2018196193A1 - 阵列基板及其制造方法、显示面板 - Google Patents

阵列基板及其制造方法、显示面板 Download PDF

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Publication number
WO2018196193A1
WO2018196193A1 PCT/CN2017/094548 CN2017094548W WO2018196193A1 WO 2018196193 A1 WO2018196193 A1 WO 2018196193A1 CN 2017094548 W CN2017094548 W CN 2017094548W WO 2018196193 A1 WO2018196193 A1 WO 2018196193A1
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WO
WIPO (PCT)
Prior art keywords
layer
photoresist
substrate
active
filter layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/094548
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English (en)
French (fr)
Inventor
陈猷仁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HKC Co Ltd
Chongqing HKC Optoelectronics Technology Co Ltd
Original Assignee
HKC Co Ltd
Chongqing HKC Optoelectronics Technology Co Ltd
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Application filed by HKC Co Ltd, Chongqing HKC Optoelectronics Technology Co Ltd filed Critical HKC Co Ltd
Priority to US15/744,115 priority Critical patent/US20190064563A1/en
Publication of WO2018196193A1 publication Critical patent/WO2018196193A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Definitions

  • the present disclosure belongs to the field of display screen technology, and relates to, for example, an array substrate, a method of manufacturing the same, and a display panel.
  • COA color filter on Array
  • TFTs thin film transistors
  • WRGB white, red, green and blue Color
  • the COA process can improve the surface quality of the display panel or thereby simplify the structure of the upper board (for example, the flattening layer (Over Coat, OC for short) structure of the board in the In-Plane Switching (IPS) liquid crystal mode) );
  • IPS In-Plane Switching
  • WRGB technology can improve the transmittance of the display panel, reduce the energy consumption of the display panel and save backlight costs.
  • the array process (Array) process of the display panel with the COA structure and the WRGB technology is as follows: the COA structure and the WRGB technology are used to complete the molding process of the first insulating layer after the gate and source processes are completed; Coating, exposure and development steps of a color photoresist layer (including red photoresist, green photoresist, and blue photoresist), and coating, exposure, and development steps of the transparent photoresist layer. After the structure of the color photoresist layer and the transparent photoresist layer is completed, the second insulating layer is formed, and then a photoresist layer (also called photoresist) is applied, and the mask is provided by using a through-hole mask.
  • a photoresist layer also called photoresist
  • PE Picture Electrode
  • the thin film transistor display panel industry has high production cost due to complicated process and large equipment investment. With the fierce competition in the market, reducing the production cost of the display panel is the development direction of the display panel industry.
  • the related art thin film transistor display panel production line is suitable for the production process of red, green and blue primary color technologies, and there is no production equipment and workshop space related to transparent photoresist. Therefore, there is a need to develop a new display production technology that can reduce production costs and increase production efficiency.
  • the present disclosure provides an array substrate, a manufacturing method thereof, and a display panel, which can reduce the production cost of the display panel and improve production efficiency.
  • a method of manufacturing an array substrate provided by the present disclosure includes the following steps.
  • a transparent conductive layer is directly deposited on the photoresist layer, and the transparent conductive layer is etched to form a pixel electrode layer.
  • the present disclosure also provides a method for manufacturing an active switch array substrate, including the following steps:
  • a transparent conductive layer is directly deposited on the photoresist layer, and the transparent conductive layer is etched to form a pixel electrode layer.
  • an active switch array substrate comprising:
  • An active layer located on the insulating layer, is disposed as a channel of the active switch
  • a source and a drain of the active switch are located on the ohmic contact layer and the insulating layer;
  • a color filter layer on the protective layer comprising a plurality of filter units
  • a photoresist layer on the color filter layer and the protective layer; wherein the photoresist layer is deposited using a photoresist that can be penetrated by visible light;
  • the pixel electrode layer is directly deposited on the photoresist layer.
  • the present disclosure also provides a display panel comprising:
  • a backlight module configured to provide an illumination source
  • the first substrate includes: a substrate; a gate of the active switch on a side of the substrate; an insulating layer on the substrate and the gate; and an active layer on the insulating layer An ohmic contact layer on the active layer; a source and a drain of the active switch on the ohmic contact layer and the insulating layer; and a protective layer on the source, the drain, and the insulating layer a color filter layer on the protective layer; a photoresist layer on the color filter layer and the protective layer, the photoresist layer being deposited using a photoresist that can be penetrated by visible light a pixel electrode layer directly on the photoresist layer; and a first alignment film on the photoresist layer; and a first polarizing plate on the other side of the first glass substrate;
  • the liquid crystal layer is filled between the first substrate and the second substrate.
  • FIG. 1 is a schematic diagram showing the process steps of an active switch array substrate according to the embodiment.
  • FIG. 2 is a flow chart of manufacturing an active switch array substrate according to the embodiment.
  • FIG. 3 is a schematic structural diagram of an active switch array substrate according to the embodiment.
  • FIG. 4 is a schematic structural diagram of a display panel provided by this embodiment.
  • a method for manufacturing an active switch array substrate includes the following steps.
  • step 100 a first metal layer is formed on a substrate 100, and the first metal layer is etched to form the gate 1 of the active switch.
  • step 200 an insulating layer 2 is deposited on the substrate 100 and the gate 1.
  • step 300 an active layer 3 and an ohmic contact layer 4 are deposited on the insulating layer 2.
  • step 400 a second metal layer is deposited on the ohmic contact layer 4 and the insulating layer 2, and the second metal layer is etched to form the source and drain 5 of the active switch.
  • a protective layer 6 is deposited on the source, drain 5 and insulating layer 2.
  • step 600 a color filter layer C is deposited on the protective layer 6 and exposed and developed.
  • step 700 a photoresist layer W' that is transparent to visible light (ie, transparent or transparent) is deposited on the color filter layer C and the protective layer 6.
  • a transparent conductive layer is directly deposited on the photoresist layer W', and the transparent conductive layer is etched to form a pixel electrode layer.
  • the active switch generally refers to a thin film transistor in the array substrate for controlling the opening and closing of the pixel unit, and the brightness of the light.
  • a first metal layer is formed on a substrate 100, and etching the first metal layer to form the gate 1 of the active switch includes the following steps.
  • the substrate 100 is cleaned to remove foreign matter
  • Exposure using ultraviolet light to illuminate the photoresist on the substrate 100 through the mask to perform exposure;
  • Etching placing the substrate into a corresponding etching solution or etching gas to etch away the first metal layer not covered by the photoresist;
  • the photoresist is removed and the residual photoresist is removed leaving a first metal layer of the desired shape to form the scan lines, the gate 1 of the active switch, and the common electrode.
  • step 300 a portion of the active layer 3 is located above the gate 1, an ohmic contact layer 4 is formed on the active layer 3, and the ohmic contact layer 4 is discontinuous.
  • step 400 a second metal layer is deposited on the ohmic contact layer 4 and the insulating layer, and the second metal layer is etched to form a source and a drain of the active switch.
  • the steps include the following steps.
  • Exposure using ultraviolet light to illuminate the photoresist through the mask to perform exposure
  • Etching placing the substrate into a corresponding etching solution or etching gas to etch away the second metal layer not covered by the photoresist;
  • the photoresist is removed, the residual photoresist is removed, and a second metal layer of a desired shape is left to form a data line, and the source and drain 5 of the active switch are defined on the ohmic contact layer.
  • the protective layer 6 on the drain 5 is formed with a notch.
  • the color filter layer is deposited on the protective layer 6 and Performing exposure and development includes the following steps.
  • a photosensitive blue organic photosensitive layer is coated on the protective layer 6, and the mask is exposed and developed to form a blue filter layer corresponding to the pixel.
  • the color filter layer C described in this embodiment can be formed.
  • a photoresist having good leveling property can be used.
  • the color filter layer C includes a red filter layer, a green filter layer, and a blue filter layer at the same level.
  • the photoresist layer W' is made of a highly transparent and transparent photoresist, so that the engraved layer W' has the characteristics possessed by the transparent photoresist.
  • the photoresist layer W' is exposed by a mask having a via hole, and then a development and etching operation is performed, thereby removing the insulating layer 2 and the protective layer 6 corresponding to the position of the via hole of the mask. An opening is formed, and the corresponding metal layer at the opening can be exposed to form an array.
  • the photoresist layer is not required to be removed, and the photoresist is left on the substrate and the subsequent pixel electrode process is continued.
  • the COA structure is matched with the WRGB technology: this embodiment can save the coating, exposure and development process of the transparent photoresist in the related process, and save the investment cost of the equipment and the subsequent cover.
  • Membrane board costs, and WRGB panels can be produced without significantly changing the RGB three primary color production lines, reducing production time, reducing production costs, and increasing the efficiency and productivity of the production line.
  • the embodiment further provides an array substrate, which comprises the following composition.
  • a gate 1 including an active switch is disposed on the substrate 100;
  • An insulating layer 2 is disposed on the substrate 100 and the gate 1;
  • the active layer 3 is located on the insulating layer 2 and is disposed as a channel of the active switch;
  • a source and a drain 5 of the active switch are located on the ohmic contact layer 4 and the insulating layer 2;
  • a color filter layer C located on the protective layer 6, comprising a plurality of filter units
  • a photoresist layer W' is disposed on the color filter layer C and the protective layer 6; wherein the photoresist layer W' is deposited using a photoresist having a high visible light transmittance;
  • a pixel electrode layer is deposited directly on the photoresist layer W'.
  • the photoresist in the photoresist layer W' has a good leveling property.
  • a transparent conductive layer is further deposited on the photoresist layer W', and is disposed to form a pixel electrode.
  • the embodiment further provides a display panel including the following components.
  • the backlight module 300 is configured to provide an illumination source
  • the first substrate includes: a substrate 100; a gate 1 including an active switch on a side of the substrate 100; an insulating layer 2 on the substrate 100 and the gate 1; an active layer 3, located on the insulating layer 2; the ohmic contact layer 4 is located on the active layer 3; the source and drain 5 of the active switch are located on the ohmic contact layer 4 and the insulating layer 2; 6, located on the source, the drain 5 and the insulating layer 2; the color filter layer C is located on the protective layer 6; the photoresist layer W' is located in the color filter layer C and the protective layer 6
  • the photoresist layer W' is deposited using a photoresist having a high transmittance in the visible light band; the pixel electrode layer 10 is located on the photoresist layer W'; and is located on the photoresist layer W 'on the first alignment film 7; the other side of the substrate 100 is further provided with a first polarizing plate 8;
  • the second substrate 200 is coupled to the first substrate
  • the liquid crystal layer 9 is filled between the first substrate and the second substrate 200.
  • a black matrix layer 11 is disposed on the inner side of the second substrate 200
  • a second alignment film 12 is disposed on the black matrix layer 11
  • a second polarizing plate 13 is disposed on an outer side of the second substrate 200.
  • the substrate 100 is a glass substrate.
  • the manufacturing process of the display panel of the present embodiment it is not necessary to perform coating, exposure, and development processes of the transparent photoresist, and it is not necessary to perform film formation of the second insulating layer.
  • the operation does not need to remove the photoresist layer W', but leave the photoresist layer W' on the panel and continue the subsequent pixel electrode process.
  • the display panel of the present embodiment does not remove the photoresist layer W', the thickness above the color photoresist layer C is increased, but the load of the signal line can be reduced by the photoresist layer W'.
  • the display panel of the embodiment can save the investment cost of the equipment for producing transparent photoresist and the cost of the mask, and can produce white, red and green under the condition that the red, green and blue primary color production lines are changed to a small extent.
  • Blue four-color technology panel shortening production time, reducing production costs and improving production line Efficiency and productivity.

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
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Abstract

一种主动开关阵列基板及其制造方法、显示面板，其中制造方法包括，在一基板上形成主动开关的栅极、绝缘层、主动层以及欧姆接触层；于所述欧姆接触层以及所述绝缘层上形成所述主动开关的源极与漏极；于所述源极、漏极以及所述绝缘层上沉积一保护层；于所述保护层上沉积一彩色滤光层并进行曝光及显影；于所述彩色滤光层及保护层上沉积一层可被可见光穿透过的光刻胶层；于所述光刻胶层上直接沉积一透明导电层，并蚀刻所述透明导电层，以形成像素电极层。

Description

阵列基板及其制造方法、显示面板 技术领域
本公开属于显示屏技术领域，例如涉及阵列基板及其制造方法、显示面板。
背景技术
越来越多的显示面板生产厂家使用在薄膜晶体管(Thin-film transistor，简称TFT)的阵列上制作彩色滤光膜(Color Filter on Array，简称COA)的工艺及白、红、绿以及蓝四色(white，red，green，blue，简称WRGB)技术。其中，COA工艺可提升显示面板曲面画质或借此简化上板的结构(例如：简化平面转换(In-Plane Switching，简称IPS)液晶模式上板的平坦化层(Over Coat，简称OC)结构)；而WRGB技术可以提升显示面板的穿透率、降低显示面板的能耗并节省背光成本。
相关技术中COA结构搭配WRGB技术的显示面板的阵列制程(Array)工艺流程如下：COA结构搭配WRGB技术在栅极与源极制程完成之后，先进行第一个绝缘层的成型工序；而后再完成彩色光阻层(包括红色光阻、绿色光阻以及蓝色光阻)的涂布、曝光与显影步骤，以及透明光阻层的涂布、曝光与显影步骤。在彩色光阻层及透明光阻层的结构完成之后再进行第二个绝缘层的成型工序，然后涂布光刻胶层(也叫光阻)，并利用带有通孔的掩膜板进行曝光操作，之后再显影与蚀刻以除去对应于通孔处的位于阵列上方的第一绝缘层以及第二绝缘层，后续再除去光刻胶层以进行后面的像素电极(Pixel Electrode，简称PE)制程。
薄膜晶体管显示面板产业由于工艺复杂且设备投资大，所以生产成本高，随着市场的激烈竞争，降低显示面板的生产成本已是显示面板行业的发展方向。相关技术中的薄膜晶体管显示面板生产线适合红、绿及蓝三原色技术的生产工艺，并无与透明光阻相关的生产设备以及厂房空间。因此，需要研发一种新的显示器生产技术，可以降低生产成本，提高生产效率。
发明内容
本公开提供一种阵列基板及其制造方法、显示面板，可以降低显示面板的生产成本，提高生产效率。
本公开提供的一种阵列基板的制造方法包括以下步骤。
在一基板上形成主动开关的栅极、绝缘层、主动层以及欧姆接触层；
于所述欧姆接触层以及所述绝缘层上形成所述主动开关的源极与漏极；
于所述源极、漏极以及所述绝缘层上沉积一保护层；
于所述保护层上沉积一彩色滤光层并进行曝光及显影；
于所述彩色滤光层及保护层上沉积一层可被可见光穿透过的光刻胶层；
于所述光刻胶层上直接沉积一透明导电层，并蚀刻所述透明导电层，以形成像素电极层。
本公开还提供一种主动开关阵列基板的制造方法，包括以下步骤：
在一基板上形成主动开关的栅极、绝缘层、主动层以及欧姆接触层；
于所述欧姆接触层以及所述绝缘层上形成所述主动开关的源极与漏极；
于所述源极、所述漏极、所述主动层以及所述绝缘层露出的表面上沉积一保护层；
处理所述保护层以露出所述漏极或所述源极的部分表面；
于所述保护层上沉积一彩色滤光层并进行曝光及显影；
于所述彩色滤光层及保护层上沉积一层可被可见光穿透过的光刻胶层；
于所述光刻胶层上直接沉积一透明导电层，并蚀刻所述透明导电层，以形成像素电极层。
本公开还提供了一种主动开关阵列基板，包含：
基板；
包含主动开关的栅极，位于所述基板上；
绝缘层，位于所述基板及所述栅极上；
主动层，位于所述绝缘层上，设置为所述主动开关的通道；
欧姆接触层，位于所述主动层上；
主动开关的源极与漏极，位于所述欧姆接触层及所述绝缘层上；
保护层，位于所述源极、漏极及绝缘层上；
彩色滤光层，位于所述保护层上，包含多个滤光单元；
光刻胶层，位于所述彩色滤光层及保护层上；其中，所述光刻胶层使用可被可见光穿透过的光刻胶沉积而成；
像素电极层，直接沉积于所述光刻胶层上。
本公开还提供了一种显示面板，包括：
背光模组，设置为提供照明光源；
第一基板，所述第一基板包括：基板；主动开关的栅极，位于所述基板一侧上；绝缘层，位于所述基板及所述栅极上；主动层，位于所述绝缘层上；欧姆接触层，位于所述主动层上；主动开关的源极与漏极，位于所述欧姆接触层及所述绝缘层上；保护层，位于所述源极、漏极及所述绝缘层上；彩色滤光层，位于所述保护层上；光刻胶层，位于所述彩色滤光层及保护层上，所述光刻胶层使用可被可见光穿透过的光刻胶沉积而成；像素电极层，直接位于所述光刻胶层上；以及位于所述光刻胶层上的第一配向膜；所述第一玻璃基板的另一侧还设有第一偏光板；
第二基板，与所述第一基板相扣合；
液晶层，填充于第一基板与第二基板之间。
附图说明
图1是本实施例提供的一种主动开关阵列基板的工艺流程步骤示意图。
图2是本实施例提供的一种主动开关阵列基板的制作流程图。
图3是本实施例提供的一种主动开关阵列基板的结构示意图。
图4是本实施例提供的一种显示面板的结构示意图。
具体实施方式
在不冲突的情况下，以下实施例和实施例中的特征可以相互组合。应当理解，此处所描述的实施例仅用以解释本公开，并不用于限定本公开。
如图1及图2所示，为本实施例提供的一种主动开关阵列基板的制造方法，包括以下步骤。
在步骤100中，在一基板100上形成一第一金属层，蚀刻所述第一金属层，以形成主动开关的栅极1。
在步骤200中，沉积一绝缘层2于所述基板100及所述栅极1上。
在步骤300中，于所述绝缘层2上，沉积一主动层3以及欧姆接触层4。
在步骤400中，于所述欧姆接触层4以及所述绝缘层2上沉积一第二金属层，并蚀刻所述第二金属层以形成所述主动开关的源极与漏极5。
在步骤500中，于所述源极、漏极5以及绝缘层2上沉积一保护层6。
在步骤600中，于所述保护层6上沉积一彩色滤光层C并进行曝光及显影。
在步骤700中，于所述彩色滤光层C及保护层6上沉积一层可被可见光穿透过的(即是，透明或较为透明的)光刻胶层W’。
在步骤800中，于所述光刻胶层W’上直接沉积一透明导电层，并蚀刻所述透明导电层，以形成像素电极层。其中，主动开关通常指的是阵列基板中的薄膜晶体管，用于控制像素单元的开启与关闭，以及发光亮度等。
可选地，在所述步骤100中，在一基板100上形成一第一金属层，蚀刻所述第一金属层，以形成主动开关的栅极1包括以下步骤。
基板100清洗，去除异物；
成膜工艺，在干净的基板100表面，通过溅射沉积形成第一金属层；
上光阻，在已形成的第一金属层上面均匀涂覆一层光刻胶；
曝光，使用紫外线透过掩模板照射基板100上的光刻胶，进行曝光；
显影，光刻胶的曝光部分被显影液溶解，留下的光刻胶呈现所需形状；
蚀刻，把基板放入对应的腐蚀液或腐蚀气体中，腐蚀掉无光刻胶覆盖的第一金属层；
去光阻，去除残余的光刻胶，留下所需形状的第一金属层，以形成扫描线、主动开关的栅极1以及公共电极。
可选地，在步骤300中，一部分主动层3位于栅极1的上方，欧姆接触层4形成于主动层3上，欧姆接触层4是不连续的。可选地，在步骤400中，于所述欧姆接触层4以及所述绝缘层上沉积一第二金属层，并蚀刻所述第二金属层以形成所述主动开关的源极与漏极5的包括以下步骤。
成膜工艺，在所述欧姆接触层4以及所述绝缘层2上，通过溅射沉积形成第二金属层；
上光阻，在已形成的第二金属层上面均匀涂覆一层光刻胶；
曝光，使用紫外线透过掩模板照射光刻胶，进行曝光；
显影，光刻胶的曝光部分被显影液溶解，留下的光刻胶呈现所需形状；
蚀刻，把基板放入对应的腐蚀液或腐蚀气体中，腐蚀掉无光刻胶覆盖的第二金属层；
去光阻，去除残余的光刻胶，留下所需形状的第二金属层，以形成数据线、并于欧姆接触层上定义出主动开关的源极及漏极5。
可选地，在步骤500中，位于漏极5上的保护层6形成有缺口。
可选地，在所述步骤600中，所述于所述保护层6上沉积一彩色滤光层并 进行曝光及显影包括以下步骤。
在所述保护层6上涂覆一层感光的红色有机感光层，掩模曝光、显影，形成与像素对应的红色滤光层；
在所述保护层6上涂覆一层感光的绿色有机感光层，掩模曝光、显影，形成与像素对应的绿色滤光层；
在所述保护层6上涂覆一层感光的蓝色有机感光层，掩模曝光、显影，形成与像素对应的蓝色滤光层。
经过上述三个步骤(顺序不限)，可以形成本实施例中所述的彩色滤光层C。
在所述步骤700中，为了保证光刻胶层W′厚度均匀，表面平滑，可以采用具有良好流平性的光刻胶。
本实施例中上述彩色滤光层C包括处于同一水平高度的红色滤光层、绿色滤光层以及蓝色滤光层。光刻胶层W′由穿透度较高、较为透明的光刻胶制成，所以刻胶层W′具有透明光阻所具备的特征。
在所述步骤700之后，利用具有通孔的掩膜板对光刻胶层W′曝光，再进行显影与蚀刻操作，进而除去掩膜板的通孔位置所对应的绝缘层2及保护层6形成开口，进而，开口处对应的金属层可以显露在外面，形成阵列。
通过上述实施例，可以得知在上述实施例提供的主动开关阵列基板的制造过程中，不需要除去光刻胶层而将光刻胶留在基板上并接续后面的像素电极制程。与相关技术中的COA结构搭配WRGB技术之Array工艺流程相比：本实施例可省去相关工艺中透明光阻(White)的涂布、曝光与显影制程，节省了设备投资费用与后续的掩膜板费用，并在不大幅改动RGB三原色生产线的条件下可以生产出WRGB面板，缩短了生产时间，降低了生产成本，提高了生产线的效率与产能。
如图3所示，本实施例还提供一种阵列基板，包含以下组成结构。
基板100；
包含主动开关的栅极1，位于所述基板100上；
绝缘层2，位于所述基板100及所述栅极1上；
主动层3，位于所述绝缘层2上，设置为所述主动开关的通道；
欧姆接触层4，位于所述主动层3上；
主动开关的源极与漏极5，位于所述欧姆接触层4及所述绝缘层2上；
保护层6，位于所述源极、漏极5及绝缘层2上；
彩色滤光层C，位于所述保护层6上，包含多个滤光单元；
光刻胶层W’，位于所述彩色滤光层C及保护层6上；其中，所述光刻胶层W’使用可见光波段穿透度高的光刻胶沉积而成；
像素电极层，直接沉积于所述光刻胶层上W’。
本实施例中，所述光刻胶层W’中的光刻胶的流平性较好。
可选地，本实施例的阵列基板中，所述光刻胶层W’上还沉积有一透明导电层，设置为形成像素电极。
参考图4，本实施例还提供了一种显示面板包括以下组成结构。
背光模组300，设置为提供照明光源；
第一基板，所述第一基板包括：基板100；包含主动开关的栅极1，位于所述基板100一侧上；绝缘层2，位于所述基板100及所述栅极1上；主动层3，位于所述绝缘层2上；欧姆接触层4，位于所述主动层3上；主动开关的源极与漏极5，位于所述欧姆接触层4及所述绝缘层2上；保护层6，位于所述源极、漏极5及绝缘层2上；彩色滤光层C，位于所述保护层6上；光刻胶层W’，位于所述彩色滤光层C及保护层6上，所述光刻胶层W’使用可见光波段穿透度高的光刻胶沉积而成；像素电极层10，位于所述光刻胶层W’上；及位于所述光刻胶层W’上的第一配向膜7；所述基板100的另一侧还设有第一偏光板8；
第二基板200，与所述第一基板相扣合；
液晶层9，填充于第一基板与第二基板200之间。
可选地，所述第二基板200内侧设置有黑色矩阵层11，所述黑色矩阵层11上设置有第二配向膜12，所述第二基板200的外侧设置有第二偏光板13。
可选地，所述基板100为玻璃基板。
通过与相关技术中的显示面板的制造方法相比较，本实施例的显示面板的制造过程中，无需进行透明光阻的涂布、曝光以及显影制程，也无需进行第二层绝缘层的成膜操作；后续也不需要除去光刻胶层W′，而是将光刻胶层W′留在面板上，并接续后面的像素电极制程。虽然，本实施例的显示面板没有除去光刻胶层W′会增加彩色光阻层C上方的厚度，但是通过光刻胶层W′可以可以降低信号线的负载。
可见本实施例的显示面板，可以节省生产透明光阻的设备投资费用与后续的掩膜板费用，并可在较小幅度改变红、绿及蓝三原色生产线的情况下生产白、红、绿及蓝四色技术面板，缩短了生产时间，降低了生产成本，提高了生产线 的效率与产能。

Claims (20)

  1. 一种阵列基板的制造方法，包括以下步骤：
    在一基板上形成主动开关的栅极、绝缘层、主动层以及欧姆接触层；
    于所述欧姆接触层以及所述绝缘层上形成所述主动开关的源极与漏极；
    于所述源极、漏极以及所述绝缘层上沉积一保护层；
    于所述保护层上沉积一彩色滤光层并进行曝光及显影；
    于所述彩色滤光层及保护层上沉积一层可被可见光穿透过的光刻胶层；
    于所述光刻胶层上直接沉积一透明导电层，并蚀刻所述透明导电层，以形成像素电极层。
  2. 如权利要求1所述的制造方法，其中，所述在一基板上形成主动开关的栅极包括：
    清洗基板，去除异物；
    在干净的基板表面，通过溅射沉积形成金属薄膜；
    在已形成的金属薄膜上面均匀涂覆一层光刻胶；
    使用紫外线透过掩模板照射光刻胶，进行曝光；
    光刻胶的曝光部分被显影液溶解，剩下的光刻胶呈现所需形状；
    把基板放入对应的腐蚀液或腐蚀气体中，腐蚀掉无光刻胶覆盖的金属薄膜；
    去除残余的光刻胶，留下所需形状的金属薄膜，以形成扫描线、主动开关的栅极以及公共电极。
  3. 如权利要求1所述的制造方法，其中，所述于所述欧姆接触层以及所述绝缘层上形成所述主动开关的源极与漏极包括：
    在所述欧姆接触层以及所述绝缘层上，通过溅射沉积形成金属薄膜；
    在已形成的金属薄膜上面均匀涂覆一层光刻胶；
    使用紫外线透过掩模板照射光刻胶，进行曝光；
    光刻胶的曝光部分被显影液溶解，剩下的光刻胶呈现所需形状；
    把基板放入对应的腐蚀液或腐蚀气体中，腐蚀掉无光刻胶覆盖的金属薄膜；
    去除残余的光刻胶，留下所需形状的金属薄膜，以形成数据线、并于欧姆接触层上定义出主动开关的源极及漏极。
  4. 如权利要求1所述的制造方法，其中，所述于所述保护层上沉积一彩色滤光层并进行曝光及显影包括：
    在所述绝缘层上涂覆一层感光的第一有机感光层，对所述第一有机感光层进行掩模曝光、显影，形成与像素对应的第一滤光层；
    在所述绝缘层上涂覆一层感光的第二有机感光层，对所述第二有机感光层进行掩模曝光、显影，形成与像素对应的第二滤光层；
    在所述绝缘层上涂覆一层感光的第三有机感光层，对所述第三有机感光层进行掩模曝光、显影，形成与像素对应的第三滤光层。
  5. 如权利要求4所述的制造方法，其中，所述第一有机感光层为红色有机感光层，所述第一滤光层为红色滤光层；
    所述第二有机感光层为绿色有机感光层，所述第二滤光层为绿色滤光层；
    所述第三有机感光层为蓝色有机感光层，所述第三滤光层为蓝色滤光层。
  6. 如权利要求5所述的制造方法，其中，所述红滤光层、所述绿滤光层和所述蓝滤光层处于同一高度。
  7. 如权利要求1所述的制造方法，其中，沉积的所述光刻胶层具有流平性。
  8. 如权利要求1所述的制造方法，其中，所述在一基板上形成主动开关的栅极、绝缘层、主动层以及欧姆接触层包括：
    在一基板上形成主动开关的栅极、绝缘层；
    在所述绝缘层上沉积所述主动层，其中部分所述主动层覆盖在所述栅极上方；
    在每一所述主动开关的主动层的两端形成欧姆接触层，其中所述主动层两端的欧姆接触层相互分离。
  9. 如权利要求1所述的制造方法，其中，所述光刻胶层包括透明的光刻胶。
  10. 一种主动开关阵列基板的制造方法，包括以下步骤：
    在一基板上形成主动开关的栅极、绝缘层、主动层以及欧姆接触层；
    于所述欧姆接触层以及所述绝缘层上形成所述主动开关的源极与漏极；
    于所述源极、所述漏极、所述主动层以及所述绝缘层露出的表面上沉积一保护层；
    处理所述保护层以露出所述漏极或所述源极的部分表面；
    于所述保护层上沉积一彩色滤光层并进行曝光及显影；
    于所述彩色滤光层及保护层上沉积一层可被可见光穿透过的光刻胶层；
    于所述光刻胶层上直接沉积一透明导电层，并蚀刻所述透明导电层，以形成像素电极层。
  11. 一种阵列基板，包括：
    基板；
    主动开关的栅极，位于所述基板上；
    绝缘层，位于所述基板及所述栅极上；
    主动层，位于所述绝缘层上，设置为所述主动开关的通道；
    欧姆接触层，位于所述主动层上；
    主动开关的源极与漏极，位于所述欧姆接触层及所述绝缘层上；
    保护层，位于所述源极、漏极及绝缘层上；
    彩色滤光层，位于所述保护层上，包含多个滤光单元；
    光刻胶层，位于所述彩色滤光层及保护层上；其中，所述光刻胶层使用可被可见光穿透过的光刻胶沉积而成；
    像素电极层，直接沉积于所述光刻胶层上。
  12. 如权利要求11所述的阵列基板，其中，所述彩色滤光层包括红色滤光层、绿色滤光层及蓝色滤光层。
  13. 如权利要求12所述的阵列基板，其中，所述红滤光层、所述绿滤光层和所述蓝滤光层处于同一高度。
  14. 一种显示面板，包括：
    背光模组，设置为提供照明光源；
    第一基板，所述第一基板包括：
    基板；
    主动开关的栅极，位于所述基板一侧上；
    绝缘层，位于所述基板及所述栅极上；
    主动层，位于所述绝缘层上；
    欧姆接触层，位于所述主动层上；
    主动开关的源极与漏极，位于所述欧姆接触层及所述绝缘层上；
    保护层，位于所述源极、漏极及所述绝缘层上；
    彩色滤光层，位于所述保护层上；
    光刻胶层，位于所述彩色滤光层及保护层上，所述光刻胶层使用可被可见光穿透过的光刻胶沉积而成；
    像素电极层，直接位于所述光刻胶层上；
    以及位于所述光刻胶层上的第一配向膜；所述第一玻璃基板的另一侧还设有第一偏光板；
    第二基板，与所述第一基板相扣合；
    液晶层，填充于第一基板与第二基板之间。
  15. 根据权利要求14所述的显示面板，其中，所述第二基板内侧设置有黑色矩阵层，所述黑色矩阵层上设置有第二配向膜，所述第二基板的外侧设置有第二偏光板。
  16. 如权利要求14所述的显示面板，所述基板为玻璃基板。
  17. 如权利要求14所述的显示面板，所述彩色滤光层包括红色滤光层、绿色滤光层及蓝色滤光层。
  18. 如权利要求17所述的显示面板，其中，所述红滤光层、所述绿滤光层和所述蓝滤光层处于同一高度。
  19. 如权利要求14所述的显示面板，所述像素电极层的材料为氧化铟锡。
  20. 如权利要求14所述的显示面板，所述绝缘层的材料为氧化硅。
PCT/CN2017/094548 2017-04-24 2017-07-26 阵列基板及其制造方法、显示面板 Ceased WO2018196193A1 (zh)

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