[go: up one dir, main page]

WO2018190780A1 - Planarisation chimico-mécanique de nitrure de gallium - Google Patents

Planarisation chimico-mécanique de nitrure de gallium Download PDF

Info

Publication number
WO2018190780A1
WO2018190780A1 PCT/TR2017/050138 TR2017050138W WO2018190780A1 WO 2018190780 A1 WO2018190780 A1 WO 2018190780A1 TR 2017050138 W TR2017050138 W TR 2017050138W WO 2018190780 A1 WO2018190780 A1 WO 2018190780A1
Authority
WO
WIPO (PCT)
Prior art keywords
slurry
cmp
pad
slurry composition
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/TR2017/050138
Other languages
English (en)
Inventor
Gul Bahar BASIM DOGAN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ozyegin Universitesi
Original Assignee
Ozyegin Universitesi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ozyegin Universitesi filed Critical Ozyegin Universitesi
Priority to PCT/TR2017/050138 priority Critical patent/WO2018190780A1/fr
Publication of WO2018190780A1 publication Critical patent/WO2018190780A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Definitions

  • the CMP material removal rate of Ga depends on the crystallographic orientation of the GaN surface and hence it is beneficial to determine the specific crystallographic orientation of the GaN surface prior to CMP.
  • a simple and accurate method of surface crystalline structure determination is desirable prior to CM] 3 process setup.
  • the type of surface crystalline structure can be determined by wettability (contact angle) measurements in accordance with embodiments of the present disclosure.
  • Figure 7 is an enlarged view of the CMP device and the distal end of the robotic arm of Figure 6 in accordance with embodiments of the present disclosure.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

La présente invention concerne la caractérisation de la nature chimique de surface d'échantillons de GaN et l'optimisation du processus CMP en termes de taux d'élimination de matériau et de qualité de surface par chimie en suspension et le développement de conception d'outil. Il a été observé que le CMP de GaN est préalablement entraîné par l'impact chimique à partir des interactions chimiques en suspension sur la base de l'observation de taux d'élimination de matériau croissants et d'une meilleure qualité de surface lorsque l'agressivité des composants mécaniques du processus CMP est limitée tandis que les composants chimiques sont favorisés. L'effet des variables d'établissement du processus CMP, tels qu'une déportance appliquée, un type de tampon, et un débit de suspension et une température sont également évalués afin d'optimiser les performances du CMP.
PCT/TR2017/050138 2017-04-12 2017-04-12 Planarisation chimico-mécanique de nitrure de gallium Ceased WO2018190780A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/TR2017/050138 WO2018190780A1 (fr) 2017-04-12 2017-04-12 Planarisation chimico-mécanique de nitrure de gallium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/TR2017/050138 WO2018190780A1 (fr) 2017-04-12 2017-04-12 Planarisation chimico-mécanique de nitrure de gallium

Publications (1)

Publication Number Publication Date
WO2018190780A1 true WO2018190780A1 (fr) 2018-10-18

Family

ID=63792796

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/TR2017/050138 Ceased WO2018190780A1 (fr) 2017-04-12 2017-04-12 Planarisation chimico-mécanique de nitrure de gallium

Country Status (1)

Country Link
WO (1) WO2018190780A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6129613A (en) * 1998-01-30 2000-10-10 Philips Electronics North America Corp. Semiconductor manufacturing apparatus and method for measuring in-situ pressure across a wafer
US20020185054A1 (en) * 2001-06-08 2002-12-12 Advanced Technology Materials Inc. High surface quality gan wafer and method of fabricating same
EP2025468A2 (fr) * 2007-08-09 2009-02-18 Fujitsu Limited Procédé de polissage, procédé de fabrication de substrat, et procédé de fabrication d'un appareil électronique
WO2010105240A2 (fr) * 2009-03-13 2010-09-16 Saint-Gobain Ceramics & Plastics, Inc. Planarisation mécanochimique à l'aide de nanodiamant
EP2514858A1 (fr) * 2009-12-18 2012-10-24 Sumitomo Electric Industries, Ltd. Substrat en cristal de nitrure du groupe iii, substrat en cristal de nitrure du groupe iii possédant une couche épitaxiale, dispositif semi-conducteur et son procédé de fabrication
KR101431633B1 (ko) * 2012-09-15 2014-09-23 김건우 화학적 기계적 연마장치의 리테이너 링
CN104745095A (zh) * 2015-04-03 2015-07-01 清华大学 一种GaN厚膜片CMP组合物及其制备方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6129613A (en) * 1998-01-30 2000-10-10 Philips Electronics North America Corp. Semiconductor manufacturing apparatus and method for measuring in-situ pressure across a wafer
US20020185054A1 (en) * 2001-06-08 2002-12-12 Advanced Technology Materials Inc. High surface quality gan wafer and method of fabricating same
EP2025468A2 (fr) * 2007-08-09 2009-02-18 Fujitsu Limited Procédé de polissage, procédé de fabrication de substrat, et procédé de fabrication d'un appareil électronique
WO2010105240A2 (fr) * 2009-03-13 2010-09-16 Saint-Gobain Ceramics & Plastics, Inc. Planarisation mécanochimique à l'aide de nanodiamant
EP2514858A1 (fr) * 2009-12-18 2012-10-24 Sumitomo Electric Industries, Ltd. Substrat en cristal de nitrure du groupe iii, substrat en cristal de nitrure du groupe iii possédant une couche épitaxiale, dispositif semi-conducteur et son procédé de fabrication
KR101431633B1 (ko) * 2012-09-15 2014-09-23 김건우 화학적 기계적 연마장치의 리테이너 링
CN104745095A (zh) * 2015-04-03 2015-07-01 清华大学 一种GaN厚膜片CMP组合物及其制备方法

Similar Documents

Publication Publication Date Title
US8398878B2 (en) Methods for producing and processing semiconductor wafers
US11781244B2 (en) Seed crystal for single crystal 4H—SiC growth and method for processing the same
US7815489B2 (en) Method for the simultaneous double-side grinding of a plurality of semiconductor wafers
KR101110682B1 (ko) 탄화규소 단결정 기판 연마용 수계 연마 슬러리 및 그 연마방법
TWI421934B (zh) 拋光半導體晶圓的方法
US10189142B2 (en) Method for polishing a semiconductor wafer
CN1204600C (zh) 半导体片两面实施材料去除切削的方法
JP2005510072A (ja) 基板表面を研磨するための方法
US9224613B2 (en) Method for polishing both sides of a semiconductor wafer
CN104064455B (zh) 半导体材料晶片的抛光方法
US8389409B2 (en) Method for producing a semiconductor wafer
US20170100815A1 (en) Method for polishing gan single crystal material
JP2009283964A (ja) シリコン・オン・インシュレータ搬送ウエハのエッジ除去
WO2002015247A2 (fr) Procede et appareil de traitement d'une plaquette a semi-conducteurs utilisant un nouveau procede de polissage final
US20230219188A1 (en) Mega-sonic vibration assisted chemical mechanical planarization
ZHANG Method of surface treatment on sapphire substrate
WO2004014607A1 (fr) Procede de polissage d'une tranche de materiau
US7198549B2 (en) Continuous contour polishing of a multi-material surface
WO2018190780A1 (fr) Planarisation chimico-mécanique de nitrure de gallium
US11117239B2 (en) Chemical mechanical polishing composition and method
Kubota Surface finishing of single-crystal SiC and GaN wafers using a magnetic tool in H2O2 solution
Karagoz et al. Surface characterization driven CMP optimization for gallium nitride
Shi et al. Realization of atomic-level smooth surface of sapphire (0001) by chemical-mechanical planarization with nano colloidal silica abrasives
JP2003170351A (ja) 研磨装置の工具プレート
HK1068840B (en) Method for polishing a substrate surface

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17905404

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17905404

Country of ref document: EP

Kind code of ref document: A1