[go: up one dir, main page]

WO2018189130A3 - Method and device for chemically treating a semiconductor substrate - Google Patents

Method and device for chemically treating a semiconductor substrate Download PDF

Info

Publication number
WO2018189130A3
WO2018189130A3 PCT/EP2018/059069 EP2018059069W WO2018189130A3 WO 2018189130 A3 WO2018189130 A3 WO 2018189130A3 EP 2018059069 W EP2018059069 W EP 2018059069W WO 2018189130 A3 WO2018189130 A3 WO 2018189130A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor substrate
chemically treating
treating
chemically
asymmetrically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2018/059069
Other languages
German (de)
French (fr)
Other versions
WO2018189130A2 (en
Inventor
Ihor Melnyk
Peter Fath
Wolfgang Jooss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCT SOLUTIONS GmbH
Original Assignee
RCT SOLUTIONS GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102017206455.2A external-priority patent/DE102017206455A1/en
Application filed by RCT SOLUTIONS GmbH filed Critical RCT SOLUTIONS GmbH
Publication of WO2018189130A2 publication Critical patent/WO2018189130A2/en
Publication of WO2018189130A3 publication Critical patent/WO2018189130A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The invention relates to a device and method for asymmetrically treating wafers (2) in a single process step.
PCT/EP2018/059069 2017-04-13 2018-04-10 Method and device for chemically treating a semiconductor substrate Ceased WO2018189130A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102017206455.2 2017-04-13
DE102017206455.2A DE102017206455A1 (en) 2017-04-13 2017-04-13 Method and apparatus for chemical processing of a semiconductor substrate
DE102017215482 2017-09-04
DE102017215482.9 2017-09-04

Publications (2)

Publication Number Publication Date
WO2018189130A2 WO2018189130A2 (en) 2018-10-18
WO2018189130A3 true WO2018189130A3 (en) 2018-12-06

Family

ID=61913182

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2018/059069 Ceased WO2018189130A2 (en) 2017-04-13 2018-04-10 Method and device for chemically treating a semiconductor substrate

Country Status (2)

Country Link
CN (2) CN208433367U (en)
WO (1) WO2018189130A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN208433367U (en) * 2017-04-13 2019-01-25 Rct解决方法有限责任公司 Equipment for chemically processing semiconductor substrates
CN114361062A (en) * 2020-10-14 2022-04-15 张家港市超声电气有限公司 Air bubble treatment device
CN112877741B (en) * 2021-01-13 2022-05-03 硅密芯镀(海宁)半导体技术有限公司 Air bubble removal method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007073887A1 (en) * 2005-12-16 2007-07-05 Gebr. Schmid Gmbh + Co. Device and method for treating the surfaces of substrates
WO2016150788A1 (en) * 2015-03-25 2016-09-29 Rct Solutions Gmbh Device and method for the chemical treatment of a semiconductor substrate
DE102015113589A1 (en) * 2015-08-17 2017-02-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method and device for processing a HNO3-containing liquid process agent

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005062528A1 (en) * 2005-12-16 2007-06-21 Gebr. Schmid Gmbh & Co. Substrate e.g. silicon wafer, surface treatment e.g. layer removal, device, has conveyor arranged beneath transport level so that substrate contacts level to moisten surface with process medium in direct contact between conveyor and surface
DE102011000861A1 (en) * 2011-02-22 2012-08-23 Rena Gmbh Method for treating an object, in particular a solar cell substrate, and device for carrying out the method
DE102011056495A1 (en) 2011-12-15 2013-06-20 Rena Gmbh Method for one-sided smooth etching of a silicon substrate
JP2013239693A (en) * 2012-04-18 2013-11-28 Mitsubishi Electric Corp Textured silicon substrate manufacturing method, processing device, and solar battery element manufacturing method
DE102014110222B4 (en) * 2014-07-21 2016-06-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method and device for structuring the top and bottom of a semiconductor substrate
CN208433367U (en) * 2017-04-13 2019-01-25 Rct解决方法有限责任公司 Equipment for chemically processing semiconductor substrates

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007073887A1 (en) * 2005-12-16 2007-07-05 Gebr. Schmid Gmbh + Co. Device and method for treating the surfaces of substrates
WO2016150788A1 (en) * 2015-03-25 2016-09-29 Rct Solutions Gmbh Device and method for the chemical treatment of a semiconductor substrate
DE102015113589A1 (en) * 2015-08-17 2017-02-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method and device for processing a HNO3-containing liquid process agent

Also Published As

Publication number Publication date
CN108735595A (en) 2018-11-02
WO2018189130A2 (en) 2018-10-18
CN208433367U (en) 2019-01-25

Similar Documents

Publication Publication Date Title
SG10201908021XA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
SG10202007309TA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
SG11202008792XA (en) Substrate processing apparatus, method of manufacturing semiconductor device and program
SG11202008980YA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
SG10202004731SA (en) Semiconductor die, semiconductor wafer, semiconductor device including the semiconductor die and method of manufacturing the semiconductor device
TWI799628B (en) Mask layout, semiconductor device and manufacturing method using the same
SG10202001360UA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
SG10202004551XA (en) Method of manufacturing semiconductor device, substrate processing apparatus and program
SG10201908479TA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
SG10201907085QA (en) Semiconductor substrate processing method
SG10202008356TA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
SG10202005751RA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
SG11202100492RA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
SG10202011563TA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
SG11202109419WA (en) Dry etching method, method for manufacturing semiconductor device, and etching device
EP3879010A4 (en) Sic semiconductor substrate, and, production method therefor and production device therefor
SG11202110372QA (en) Substrate processing apparatus, method of manufacturing semiconductor device and program
SG10202009323WA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
WO2018189130A3 (en) Method and device for chemically treating a semiconductor substrate
SG11202110268WA (en) Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and program
SG11202109666TA (en) Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and program
SG11202007413VA (en) Vaporizer, substrate processing apparatus and method of manufacturing semiconductor device
SG11202002510YA (en) Substrate processing apparatus, method of manufacturing semiconductor device, and program
SG11202110248VA (en) Recipe creation method, semiconductor device manufacturing method, substrate processing apparatus, and recipe creation program
SG11202102590YA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18716612

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18716612

Country of ref document: EP

Kind code of ref document: A2