WO2018184177A1 - Standing wave detecting method, standing wave detecting device, and electron gun - Google Patents
Standing wave detecting method, standing wave detecting device, and electron gun Download PDFInfo
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- WO2018184177A1 WO2018184177A1 PCT/CN2017/079633 CN2017079633W WO2018184177A1 WO 2018184177 A1 WO2018184177 A1 WO 2018184177A1 CN 2017079633 W CN2017079633 W CN 2017079633W WO 2018184177 A1 WO2018184177 A1 WO 2018184177A1
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- the present invention relates to the field of electronic device technologies, and in particular, to a standing wave detecting method, a standing wave detecting device, and an electron gun.
- Wireless communication products such as antennas need to perform standing wave detection to obtain the standing wave ratio and evaluate whether the quality of the product meets the requirements by the magnitude of the standing wave ratio.
- the VSWR of the product is indirectly measured using components such as a coupler and a detector. Because the accuracy of the components such as the coupler is difficult to guarantee, the measurement result of the standing wave ratio is not accurate enough.
- Embodiments of the present invention provide a standing wave detecting method, a standing wave detecting device, and an electron gun.
- the standing wave detecting method of the embodiment of the present invention is for detecting a standing wave ratio of an antenna of an antenna assembly, and the method includes:
- a standing wave detecting apparatus for detecting a standing wave ratio of an antenna of an antenna assembly, the standing wave detecting apparatus including a processor, the processor is configured to:
- An electron gun includes an antenna assembly and a standing wave detecting device connected to the antenna assembly, the antenna assembly including an antenna, the standing wave detecting device for detecting a standing wave ratio of the antenna, and the standing wave detecting
- the apparatus includes a processor for:
- the standing wave detecting method, the standing wave detecting device, and the electron gun are also measured after obtaining the measured reflection coefficient of the antenna.
- the amount of reflection coefficient calculates the actual reflection coefficient through the calibration parameters, and further calculates the standing wave ratio of the antenna through the actual reflection coefficient, and the obtained antenna standing wave ratio has higher accuracy.
- FIG. 1 is a schematic flow chart of a standing wave detecting method according to an embodiment of the present invention.
- FIG. 2 is a schematic block diagram of an electron gun according to an embodiment of the present invention.
- FIG. 3 is a schematic flow chart of a standing wave detecting method according to an embodiment of the present invention.
- FIG. 4 is a schematic flow chart of a standing wave detecting method according to an embodiment of the present invention.
- FIG. 5 is a schematic block diagram of an electron gun according to an embodiment of the present invention.
- FIG. 6 is a schematic block diagram of an antenna assembly according to an embodiment of the present invention.
- FIG. 7 is a schematic diagram of a two-port network signal flow of an antenna assembly according to an embodiment of the present invention.
- FIG. 8 is a schematic flow chart of a standing wave detecting method according to an embodiment of the present invention.
- FIG. 9 is a schematic flow chart of a standing wave detecting method according to an embodiment of the present invention.
- FIG. 10 is a schematic block diagram of an electron gun according to an embodiment of the present invention.
- FIG. 11 is a flow chart showing a standing wave detecting method according to an embodiment of the present invention.
- Electron gun 100 antenna assembly 10, antenna 12, test circuit board 14, signal source 142, bidirectional coupler 144, reverse coupled output 1442, forward coupled output 1444, reflective coupling branch 146, first attenuator 1462
- the first feature "on” or “under” the second feature may be a direct contact of the first and second features, or the first and second features may be indirectly through an intermediate medium, unless otherwise explicitly stated and defined. contact.
- the first feature "above”, “above” and “above” the second feature may be that the first feature is directly above or above the second feature, or merely that the first feature level is higher than the second feature.
- the first feature “below”, “below” and “below” the second feature may be that the first feature is directly below or obliquely below the second feature, or merely that the first feature level is less than the second feature.
- the standing wave detecting method is used to detect the standing wave ratio of the antenna 12 of the antenna assembly 10.
- the standing wave detecting method includes the following steps:
- the standing wave detecting device 20 of the embodiment of the present invention is for detecting the standing wave ratio of the antenna 12 of the antenna assembly 10.
- the standing wave detecting device 20 includes a processor 22, and the processor 22 can be used to implement steps S1, S2, S3, and S4. That is, the processor 22 can be used to acquire the measured reflection coefficient of the antenna 12.
- Processor 22 can be used to obtain calibration parameters.
- the processor 22 can be configured to calculate an actual reflection coefficient of the antenna 12 based on the reflection coefficient and the calibration parameters.
- the processor 22 can be used to calculate the standing wave ratio of the antenna 12 based on the actual reflection coefficient.
- the standing wave detecting device 20 according to the embodiment of the present invention can be applied to the electron gun 100 according to the embodiment of the present invention.
- the standing wave detecting device 20 is connected to the antenna assembly 10 and used to detect the standing wave ratio of the antenna 12. .
- the standing wave detecting method, the standing wave detecting device 20, and the electron gun 100 described above acquire the measured reflection coefficient of the antenna 12. Thereafter, the actual reflection coefficient is also calculated by the calibration parameter for the measured reflection coefficient, and the standing wave ratio of the antenna 12 is further calculated by the actual reflection coefficient, whereby the accuracy of the standing wave ratio of the antenna 12 obtained is high.
- the antenna 12 may transmit or receive electromagnetic waves outward to achieve the purpose of transmitting a signal to an external device or receiving a signal of an external device, or the antenna 12 may also emit electromagnetic waves for the purpose of interfering with communication of an external device.
- the electromagnetic wave can be a high-frequency electromagnetic wave or a low-frequency electromagnetic wave, such as a radio frequency.
- the radio frequency can be transmitted in the air and reflected by the ionosphere at the outer edge of the atmosphere to form a long-distance transmission capability.
- the electron gun 100 may be a device that uses the antenna assembly 10 to emit electromagnetic waves to the outside to interfere with communication of external devices.
- the electron gun 100 may be used to transmit electromagnetic waves to the drone to interfere with the drone and the drone remote controller, or the drone and the satellite, etc. The communication between the drones makes the drone lose control.
- the reflection coefficient is defined as the ratio of the reflected voltage to the incident voltage.
- the reflection coefficient is usually used to describe the amplitude and phase relationship between the reflected wave and the incident wave. There is a certain proportional relationship between the reflection coefficient and the standing wave ratio.
- the standing wave ratio is an index describing the degree of impedance matching of the antenna 12 port.
- the magnitude of the standing wave ratio of the antenna 12 port directly affects the transmission and reception efficiency of the signal, thereby affecting the performance of the antenna assembly 10.
- the standing wave ratio is defined as the ratio of the antinode voltage to the valley voltage. In order to obtain the standing wave ratio of the antenna 12, the reflection coefficient of the antenna 12 can be measured, and then the standing wave ratio of the antenna 12 can be calculated by the relationship between the standing wave ratio and the reflection coefficient.
- step S2 includes the following sub-steps:
- Processor 22 can also be used to implement steps S21 and S22. That is to say, the processor 22 is also used to acquire the measured reflection coefficients of the three reference antennas, and the actual reflection coefficients of the three reference antennas are known. The processor 22 is further configured to substitute three known actual reflection coefficients and corresponding measured reflection coefficients into the first equation and calculate calibration parameters. The processor 22 is coupled to the memory 24.
- processor 22 substitutes ⁇ ′ S and ⁇ S , ⁇ ′ O and ⁇ O , ⁇ ′ L and ⁇ L into the first equation, respectively, to obtain a system of equations in which three equations are connected:
- the processor 22 calculates the above equations to obtain calibration parameters A, B, and C:
- the antenna 12 can be regarded as a kind of load in the antenna assembly 10, and the reference antenna is used instead of the antenna 12 as a load in the antenna assembly 10.
- the measured reflection coefficient of the reference antenna can be obtained by the processor 22.
- the reference antenna can be one or more of an open load, a shorted load, and a matched load.
- the three reference antennas may be three of an open load, a short load, and a matched load, for example, the first reference antenna is an open load, the second reference antenna is a short circuit load, and the third reference antenna is a matched load.
- two of the three reference antennas may be any two of an open load, a short load, and a matched load, and the other reference antenna is the rest of the load, for example, the first reference antenna is an open load, The second reference antenna is a short-circuit load, the third reference antenna is an open load, a short-circuit load, and a load other than the matched load, or the first reference antenna is an open load, the second reference antenna is a matched load, and the third reference antenna is an open load. , short-circuit load and load outside the matching load.
- one of the three reference antennas may be any one of an open load, a short load, and a matched load, and the other two reference antennas are the remaining types of loads, for example, the first reference antenna is an open load, The second reference antenna and the third reference antenna are both an open load, a short-circuit load, and a load other than the matched load, or the first reference antenna is a short-circuit load, and the second reference antenna and the third reference antenna are open load, short-circuit load, and matching. Load outside the load.
- the actual reflection coefficients of the open circuit load, the short circuit load, and the matched load are +1, -1, and 0, respectively, and are not easily changed with changes in the environment, thus ensuring the accuracy of the calibration parameters calculated by the processor 22.
- the memory 24 can also be used to store calibration parameters A, B, C.
- the processor 22 can also be used to implement step S31, that is, the processor 22 can also be used to calculate the actual reflection coefficient in accordance with the second equation. Specifically, the processor 22 can also be used to substitute the measured reflection coefficient and the calibration parameter into the second equation and calculate the actual reflection coefficient.
- the network relationship between the first port 16 of the antenna assembly 10 connected to the standing wave detecting device 20 and the second port 18 of the antenna assembly 10 connected to the antenna 12 can be abstractly equivalent to a two-port network.
- the ports (16, 18) have both incident and reflected waves, and the reflection coefficients of the ports (16, 18) are the ratio of the reflected wave power to the incident wave power.
- FIG. 7 is a signal flow diagram of a two-port network in which the network relationship between the first port 16 and the second port 18 is abstractly equivalent, wherein the first port 16 is abstracted to receive the first node a 1 . a port 16, the incident, reflected and transmitted waves 16 from the first port node b 1. The second port 18 is abstracted to receive the incident wave of the second port 18 from the node a 2 and the reflected wave of the second port 18 from the node b 2 .
- the gain of node a 1 to node b 1 is S 11
- the gain of node a 1 to node b 2 is S 21
- the gain of node a 2 to node b 1 is S 12
- the gain of node a 2 to node b 2 is S 22
- each of the above gains is related to the nature of the antenna assembly 10 itself.
- the first port 16 is a port that the antenna component 10 is connected to the standing wave detecting device 20.
- the reflection coefficient of the antenna 12 directly detected by the first port 16 is a measured reflection coefficient.
- the measured reflection coefficient ⁇ 1 can be used.
- the processor 22 can also be used to implement step S41, that is, the processor 22 can also be used to calculate the standing wave ratio according to a third party program. In particular, processor 22 can be used to substitute the actual reflection coefficient ⁇ 2 into a third party program to calculate the standing wave ratio VSWR.
- step S1 includes the steps of:
- the standing wave detecting device 20 further includes a detector 26 and a memory 24.
- Detector 26 and processor 22 can be used to implement steps S11 and S12, respectively. That is, the detector 26 can be used to detect the incident wave power and the reflected wave power of the antenna 12.
- the processor 22 can also be used to calculate a measured reflection coefficient in accordance with the fourth equation. Specifically, the processor 22 can be used to substitute the incident wave power and the reflected wave power detected by the detector 26 into the fourth equation, and calculate the measured reflection coefficient.
- detector 26 is a means for detecting some useful information in the heartbeat, means for identifying the presence or variation of a wave, oscillation or signal.
- One end of the detector 26 is coupled to the antenna assembly 10 for equivalent detection of the incident wave power and reflected wave power of the antenna 12, and the other end of the detector 26 is coupled to the processor 22 for providing the detected incidence to the processor 22.
- the detector 26 is coupled to the antenna assembly 10 via a plug interface to facilitate disassembly and assembly of the detector 26.
- the antenna assembly 10 further includes a test circuit board 14 including an incident coupling branch 148 for detecting the incident wave power of the antenna 12, and a reflection coupling branch 146 for detecting the reflected wave power of the antenna 12, the step S11 comprising the steps of:
- the antenna assembly 10 further includes a test circuit board 14 that includes an incident coupling branch 148 for detecting the incident wave power of the antenna 12, and a reflection for detecting the reflected wave power of the antenna 12.
- Coupled branch 146, detector 26 can be used to implement steps S111 and S112, that is, detector 26 can be used to detect incident wave power through incident coupling branch 148 and to detect reflected wave power through reflective coupling branch 146.
- step S111 and step S112 may be: first step S111 and then step S112, or step S112 and step S111.
- the incident coupling branch 148 is used to equivalently output the incident wave of the antenna 12
- the reflective coupling branch 146 is used to equivalently output the reflected wave of the antenna 12
- the detector 26 can detect the antenna when connected to the incident coupling branch 148.
- the incident wave power of 12, when connected to the reflection coupling branch 146, can detect the reflected wave power of the antenna 12.
- test circuit board 14 further includes a signal source 142, a bidirectional coupler 144, and a changeover switch 149.
- Signal source 142 is used to generate a signal.
- Bidirectional coupler 144 is coupled to signal source 142 and antenna 12 and is used to couple forward and reverse power between signal source 142 and antenna 12 for use by incident coupling branch 148 and reflective coupling branch 146.
- Switching switch 149 is used to switchably connect detector 26 to incident coupling branch 148 or reflective coupling branch 146.
- the bidirectional coupler 144 couples the incident waves generated by the signal source 142 to the antenna 12 and the incident coupling branch 148, respectively, while coupling the reflected wave portion of the antenna 12 to the reflective coupling branch 146.
- the bidirectional coupler 144 couples the reflected waves of the antenna 12 to the outcoupling output 1442 and into the reflective coupling branch 146, and couples the incident waves generated by the signal source 142 to the forward coupled output 1444 and into Incident coupling branch 148.
- Switch 149 can connect incident coupling branch 148 or reflective coupling branch 146 to detector 26.
- the reflective coupling branch 146 includes a first attenuator 1462 that is coupled between the reverse coupled output 1442 of the bidirectional coupler 144 and the diverter switch 149.
- the first attenuator 1462 can be used to adjust the reflected wave power of the reflective coupling branch 146 such that the reflected wave power falls within the detection range of the detector 26, ensuring that the detection result of the detector 26 is more accurate.
- the incident coupling branch 148 includes a second attenuator 1482 that is coupled between the forward coupled output 1444 of the bidirectional coupler 144 and the diverter switch 149.
- the second attenuator 1482 can be used to adjust the incident wave power of the incident coupling branch 148 such that the incident wave power falls within the detection range of the detector 26, ensuring that the detection result of the detector 26 is more accurate.
- first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
- features defining “first” or “second” may include at least one of the features, either explicitly or implicitly.
- a plurality means at least two, for example two, three, unless specifically defined otherwise.
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Abstract
Description
本发明涉及电子器件技术领域,特别涉及一种驻波检测方法、驻波检测装置和电子枪。The present invention relates to the field of electronic device technologies, and in particular, to a standing wave detecting method, a standing wave detecting device, and an electron gun.
天线等无线通信产品需要进行驻波检测,以得到驻波比并通过驻波比的大小评估产品的质量是否符合需求,通常使用耦合器、检波器等元器件间接测量产品的驻波比,然而,由于耦合器等元器件本身的精确度难以保证,使得驻波比的测量结果不够准确。Wireless communication products such as antennas need to perform standing wave detection to obtain the standing wave ratio and evaluate whether the quality of the product meets the requirements by the magnitude of the standing wave ratio. Usually, the VSWR of the product is indirectly measured using components such as a coupler and a detector. Because the accuracy of the components such as the coupler is difficult to guarantee, the measurement result of the standing wave ratio is not accurate enough.
发明内容Summary of the invention
本发明的实施方式提供了一种驻波检测方法、驻波检测装置和电子枪。Embodiments of the present invention provide a standing wave detecting method, a standing wave detecting device, and an electron gun.
本发明实施方式的驻波检测方法用于检测天线组件的天线的驻波比,所述方法包括:The standing wave detecting method of the embodiment of the present invention is for detecting a standing wave ratio of an antenna of an antenna assembly, and the method includes:
获取所述天线的测量反射系数;Obtaining a measured reflection coefficient of the antenna;
获取校准参数;Obtain calibration parameters;
依据所述测量反射系数和所述校准参数计算所述天线的实际反射系数;和Calculating an actual reflection coefficient of the antenna according to the measured reflection coefficient and the calibration parameter; and
依据所述实际反射系数计算所述天线的驻波比。Calculating a standing wave ratio of the antenna according to the actual reflection coefficient.
本发明实施方式的驻波检测装置用于检测天线组件的天线的驻波比,所述驻波检测装置包括处理器,所述处理器用于:A standing wave detecting apparatus according to an embodiment of the present invention is for detecting a standing wave ratio of an antenna of an antenna assembly, the standing wave detecting apparatus including a processor, the processor is configured to:
获取所述天线的测量反射系数;Obtaining a measured reflection coefficient of the antenna;
获取校准参数;Obtain calibration parameters;
依据所述测量反射系数和所述校准参数计算所述天线的实际反射系数;和Calculating an actual reflection coefficient of the antenna according to the measured reflection coefficient and the calibration parameter; and
依据所述实际反射系数计算所述天线的驻波比。Calculating a standing wave ratio of the antenna according to the actual reflection coefficient.
本发明实施方式的电子枪包括天线组件、和与天线组件连接的驻波检测装置,所述天线组件包括天线,所述驻波检测装置用于检测所述天线的驻波比,所述驻波检测装置包括处理器,所述处理器用于:An electron gun according to an embodiment of the present invention includes an antenna assembly and a standing wave detecting device connected to the antenna assembly, the antenna assembly including an antenna, the standing wave detecting device for detecting a standing wave ratio of the antenna, and the standing wave detecting The apparatus includes a processor for:
获取所述天线的测量反射系数;Obtaining a measured reflection coefficient of the antenna;
获取校准参数;Obtain calibration parameters;
依据所述测量反射系数和所述校准参数计算所述天线的实际反射系数;和Calculating an actual reflection coefficient of the antenna according to the measured reflection coefficient and the calibration parameter; and
依据所述实际反射系数计算所述天线的驻波比。Calculating a standing wave ratio of the antenna according to the actual reflection coefficient.
上述驻波检测方法、驻波检测装置和电子枪在获取天线的测量反射系数后,还针对测 量反射系数通过校准参数计算实际反射系数,并进一步通过实际反射系数计算天线的驻波比,由此得到的天线驻波比的准确度较高。The standing wave detecting method, the standing wave detecting device, and the electron gun are also measured after obtaining the measured reflection coefficient of the antenna. The amount of reflection coefficient calculates the actual reflection coefficient through the calibration parameters, and further calculates the standing wave ratio of the antenna through the actual reflection coefficient, and the obtained antenna standing wave ratio has higher accuracy.
本发明的实施方式的附加方面和优点将在下面的描述中部分给出,部分将从下面的描述中变得明显,或通过本发明的实施方式的实践了解到。The additional aspects and advantages of the embodiments of the present invention will be set forth in part in the description which follows.
本发明的上述和/或附加的方面和优点从结合下面附图对实施方式的描述中将变得明显和容易理解,其中:The above and/or additional aspects and advantages of the present invention will become apparent and readily understood from
图1是本发明实施方式的驻波检测方法的流程示意图;1 is a schematic flow chart of a standing wave detecting method according to an embodiment of the present invention;
图2是本发明实施方式的电子枪的模块示意图;2 is a schematic block diagram of an electron gun according to an embodiment of the present invention;
图3是本发明实施方式的驻波检测方法的流程示意图;3 is a schematic flow chart of a standing wave detecting method according to an embodiment of the present invention;
图4是本发明实施方式的驻波检测方法的流程示意图;4 is a schematic flow chart of a standing wave detecting method according to an embodiment of the present invention;
图5是本发明实施方式的电子枪的模块示意图;5 is a schematic block diagram of an electron gun according to an embodiment of the present invention;
图6是本发明实施方式的天线组件的模块示意图;6 is a schematic block diagram of an antenna assembly according to an embodiment of the present invention;
图7是本发明实施方式的天线组件的二端口网络信号流示意图;7 is a schematic diagram of a two-port network signal flow of an antenna assembly according to an embodiment of the present invention;
图8是本发明实施方式的驻波检测方法的流程示意图;8 is a schematic flow chart of a standing wave detecting method according to an embodiment of the present invention;
图9是本发明实施方式的驻波检测方法的流程示意图;9 is a schematic flow chart of a standing wave detecting method according to an embodiment of the present invention;
图10是本发明实施方式的电子枪的模块示意图;FIG. 10 is a schematic block diagram of an electron gun according to an embodiment of the present invention; FIG.
图11是本发明实施方式的驻波检测方法的流程示意图。11 is a flow chart showing a standing wave detecting method according to an embodiment of the present invention.
主要元件符号说明:The main component symbol description:
电子枪100、天线组件10、天线12、测试电路板14、信号源142、双向耦合器144、反向耦合输出端1442、正向耦合输出端1444、反射耦合支路146、第一衰减器1462、入射耦合支路148、第二衰减器1482、切换开关149、第一端口16、第二端口18、驻波检测装置20、处理器22、存储器24、检波器26。Electron
以下结合附图对本发明的实施方式作进一步说明。附图中相同或类似的标号自始至终表示相同或类似的元件或具有相同或类似功能的元件。Embodiments of the present invention will be further described below in conjunction with the accompanying drawings. The same or similar reference numerals in the drawings denote the same or similar elements or elements having the same or similar functions.
另外,下面结合附图描述的本发明的实施方式是示例性的,仅用于解释本发明的实施方式,而不能理解为对本发明的限制。 In addition, the embodiments of the present invention described below in conjunction with the accompanying drawings are merely illustrative of the embodiments of the invention, and are not to be construed as limiting.
在本发明中,除非另有明确的规定和限定,第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触,或第一和第二特征通过中间媒介间接接触。而且,第一特征在第二特征“之上”、“上方”和“上面”可是第一特征在第二特征正上方或斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方,或仅仅表示第一特征水平高度小于第二特征。In the present invention, the first feature "on" or "under" the second feature may be a direct contact of the first and second features, or the first and second features may be indirectly through an intermediate medium, unless otherwise explicitly stated and defined. contact. Moreover, the first feature "above", "above" and "above" the second feature may be that the first feature is directly above or above the second feature, or merely that the first feature level is higher than the second feature. The first feature "below", "below" and "below" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely that the first feature level is less than the second feature.
在本说明书的描述中,参考术语“某些实施方式”、“一个实施方式”、“一些实施方式”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外,在不相互矛盾的情况下,本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。In the description of the present specification, the description with reference to the terms "some embodiments", "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. Particular features, structures, materials or features described in the examples or examples are included in at least one embodiment or example of the invention. In the present specification, the schematic representation of the above terms is not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. In addition, various embodiments or examples described in the specification, as well as features of various embodiments or examples, may be combined and combined.
尽管上面已经示出和描述了本发明的实施例,可以理解的是,上述实施例是示例性的,不能理解为对本发明的限制,本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。Although the embodiments of the present invention have been shown and described, it is understood that the above-described embodiments are illustrative and are not to be construed as limiting the scope of the invention. The embodiments are subject to variations, modifications, substitutions and variations.
请参阅图1和图2,本发明实施方式的驻波检测方法用于检测天线组件10的天线12的驻波比,驻波检测方法包括步骤:Referring to FIG. 1 and FIG. 2, the standing wave detecting method according to the embodiment of the present invention is used to detect the standing wave ratio of the
S1:获取天线12的测量反射系数;S1: acquiring a measured reflection coefficient of the
S2:获取校准参数;S2: obtaining calibration parameters;
S3:依据测量反射系数和校准参数计算天线12的实际反射系数;和S3: calculating an actual reflection coefficient of the
S4:依据实际反射系数计算天线12的驻波比。S4: Calculate the standing wave ratio of the
本发明实施方式的驻波检测装置20用于检测天线组件10的天线12的驻波比,驻波检测装置20包括处理器22,处理器22可用于实施步骤S1、S2、S3和S4。也就是说,处理器22可用于获取天线12的测量反射系数。处理器22可用于获取校准参数。处理器22可用于依据反射系数和校准参数计算天线12的实际反射系数。处理器22可用于依据实际反射系数计算天线12的驻波比。The standing
本发明实施方式的驻波检测装置20能运用于本发明实施方式的电子枪100,在本发明实施方式的电子枪100中,驻波检测装置20与天线组件10连接并用于检测天线12的驻波比。The standing
上述的驻波检测方法、驻波检测装置20和电子枪100在获取天线12的测量反射系数
后,还针对测量反射系数通过校准参数计算实际反射系数,并进一步通过实际反射系数计算天线12的驻波比,由此得到的天线12的驻波比的准确度较高。The standing wave detecting method, the standing
具体地,天线12可以向外发射或接收电磁波,以实现向外部设备发射信号或者接收外部设备的信号的目的,或者天线12也可以发射电磁波以实现干扰外部设备通信的目的。电磁波可以是高频电磁波或低频电磁波,例如射频,射频可以在空气中传播,并经大气层外缘的电离层反射,形成远距离传输能力。Specifically, the
电子枪100可以是利用天线组件10向外界发射电磁波以干扰外部设备通信的设备,例如电子枪100可用于向无人机发射电磁波以干扰无人机与无人机遥控器、或者无人机与卫星等之间的通信,使得无人机失去控制。The
反射系数定义为反射电压与入射电压的比,通常用反射系数描述反射波与入射波之间的幅度与相位关系。反射系数与驻波比存在一定的比例关系。The reflection coefficient is defined as the ratio of the reflected voltage to the incident voltage. The reflection coefficient is usually used to describe the amplitude and phase relationship between the reflected wave and the incident wave. There is a certain proportional relationship between the reflection coefficient and the standing wave ratio.
驻波比是描述天线12端口阻抗匹配程度的指标,天线12端口的驻波比的大小直接影响信号的发射和接收效率,进而影响天线组件10的性能,驻波比越大代表天线12端口失配越严重,即是大部分的能量不能有效地传输。因此,通过检测天线12的驻波比可以用于检测天线12是否损坏或者是否正常安装。驻波比定义为波腹电压与波谷电压的比。为了得到天线12的驻波比,可以测量天线12的反射系数后再通过驻波比与反射系数的关系计算得到天线12的驻波比。The standing wave ratio is an index describing the degree of impedance matching of the
请参阅图3和图4,在某些实施方式中,步骤S2包括以下子步骤:Referring to FIG. 3 and FIG. 4, in some embodiments, step S2 includes the following sub-steps:
S21:获取三个参考天线的测量反射系数,三个参考天线的实际反射系数为已知;和S21: acquiring measurement reflection coefficients of three reference antennas, and actual reflection coefficients of the three reference antennas are known; and
S22:将三个已知的实际反射系数和对应的三个参考天线的测量反射系数分别代入以下第一方程式并计算校准参数:Г2A+B-Г2Г1C=Г1,其中,Г1为测量反射系数,Г2为实际反射系数,A、B、C为校准参数。S22: Substituting the three known actual reflection coefficients and the measured reflection coefficients of the corresponding three reference antennas into the following first equation and calculating the calibration parameters: Г 2 A+B-Г 2 Г 1 C=Г 1 , wherein Г 1 is the measured reflection coefficient, Г 2 is the actual reflection coefficient, and A, B, and C are calibration parameters.
在某些实施方式中,驻波检测装置20还包括存储器24,存储器24用于存储第一方程式:Г2A+B-Г2Г1C=Г1,也可以存储三个参考天线的实际反射系数,其中,Г1为测量反射系数,Г2为实际反射系数,A、B、C为校准参数。In some embodiments, the standing
处理器22还可用于实施步骤S21和S22。也就是说,处理器22还用于获取三个参考天线的测量反射系数,三个参考天线的实际反射系数为已知。处理器22还用于将三个已知的实际反射系数和对应的测量反射系数分别代入第一方程式并计算校准参数。处理器22与存储器24连接。
具体地,假设三个参考天线的已知的实际反射系数分别为Г′S、Г′O和Г′L,处理器22获取的三个参考天线的测量反射系数分别为ГS、ГO和ГL,处理器22分别将Г′S和ГS、Г′O和ГO、Г′L和ГL代入到第一方程式中,得到由三个方程联立的方程组:Specifically, assuming that the known actual reflection coefficients of the three reference antennas are Г' S , Г ' O and Г ' L , respectively, the measured reflection coefficients of the three reference antennas acquired by the processor 22 are Г S , Г O and Г L , processor 22 substitutes Г′ S and Г S , Г′ O and Г O , Г′ L and Г L into the first equation, respectively, to obtain a system of equations in which three equations are connected:
进一步地,处理器22计算上述的方程组可得到校准参数A、B、C为:Further, the processor 22 calculates the above equations to obtain calibration parameters A, B, and C:
可以理解,在天线组件10中,天线12可以视为是天线组件10中的一种负载,以参考天线代替天线12作为天线组件10中的负载,可通过处理器22获取参考天线的测量反射系数。在某些实施方式中,参考天线可以是开路负载、短路负载和匹配负载中的一种或几种。在一个实施例中,三个参考天线可以是开路负载、短路负载和匹配负载中的三个,例如第一参考天线为开路负载,第二参考天线为短路负载,第三参考天线为匹配负载。在另一个实施例中,三个参考天线中的两个可以是开路负载、短路负载和匹配负载中的任意两个,另一个参考天线为其余种类的负载,例如第一参考天线为开路负载,第二参考天线为短路负载,第三参考天线为开路负载、短路负载和匹配负载之外的负载,或者第一参考天线为开路负载,第二参考天线为匹配负载,第三参考天线为开路负载、短路负载和匹配负载之外的负载。在又一个实施例中,三个参考天线中的一个可以是开路负载、短路负载和匹配负载中的任意一个,另两个参考天线为其余种类的负载,例如第一参考天线为开路负载,第二参考天线和第三参考天线均为开路负载、短路负载和匹配负载之外的负载,或者第一参考天线为短路负载,第二参考天线和第三参考天线均为开路负载、短路负载和匹配负载之外的负载。It can be understood that in the
开路负载、短路负载和匹配负载的实际反射系数为分别为+1、-1和0且不易随环境的改变而改变,如此,保证了由处理器22计算的校准参数的准确性。The actual reflection coefficients of the open circuit load, the short circuit load, and the matched load are +1, -1, and 0, respectively, and are not easily changed with changes in the environment, thus ensuring the accuracy of the calibration parameters calculated by the
请参阅图4,在某些实施方式中,步骤S3包括步骤S31:依据以下第二方程式计算实际反射系数:Г2=(Г1-B)/(A-CГ1),其中,Г1为测量反射系数,Г2为实际反射系数, A、B、C为校准参数。Referring to FIG 4, in some embodiments, the step S3 comprising Step S31: according to the following equation to calculate the actual second reflection coefficient: Г 2 = (Г 1 -B ) / (A-CГ 1), wherein, Г 1 is The reflection coefficient is measured, Г 2 is the actual reflection coefficient, and A, B, and C are calibration parameters.
请参阅图5,在某些实施方式中,驻波检测装置20还包括存储器24,存储器24用于存储第二方程式:Г2=(Г1-B)/(A-CГ1),其中,Г1为测量反射系数,Г2为实际反射系数,A、B、C为校准参数。存储器24也可以用于存储校准参数A、B、C。处理器22还可用于实施步骤S31,也就是说,处理器22还可用于依据第二方程式计算实际反射系数。具体地,处理器22还可用于将测量反射系数和校准参数代入第二方程式并计算实际反射系数。Referring to FIG. 5, in some embodiments, the standing
具体地,请结合图6,可以将天线组件10与驻波检测装置20连接的第一端口16,和天线组件10上连接天线12的第二端口18的网络关系抽象等效成一个二端口网络。端口(16、18)均同时存在有入射波和反射波,端口(16、18)的反射系数为反射波功率与入射波功率的比值。Specifically, in conjunction with FIG. 6, the network relationship between the
请参阅图7,图7所示为将第一端口16和第二端口18的网络关系抽象等效成的二端口网络的信号流图,其中,第一端口16抽象为从节点a1接收第一端口16的入射波,且从节点b1发射第一端口16的反射波。第二端口18抽象为从节点a2接收第二端口18的入射波,且从节点b2发射第二端口18的反射波。节点a1到节点b1的增益为S11,节点a1到节点b2的增益为S21,节点a2到节点b1的增益为S12,节点a2到节点b2的增益为S22,上述的各增益与天线组件10本身的性质有关。Referring to FIG. 7, FIG. 7 is a signal flow diagram of a two-port network in which the network relationship between the
可以理解,第一端口16为天线组件10与驻波检测装置20连接的端口,通过第一端口16直接检测到的天线12的反射系数为测量反射系数,具体地,测量反射系数Г1可以用节点b1到节点a1的增益来表示,也就是说Г1=b1/a1。第二端口18为天线组件10上天线12的连接端口,实际反射系数Г2可以用节点b2到节点a2的增益来表示,也就是说Г2=b2/a2。It can be understood that the
根据二端口网络各节点信号功率的关系,节点b1和节点b2的信号功率与各增益之间的关系为:b1=a1S11+a2S12,b2=a1S21+a2S22,因此,可进一步得到测量反射系数Г1与实际反射系数Г2之间的关系式为:According to the relationship between the signal powers of the nodes of the two-port network, the relationship between the signal power of the nodes b 1 and b 2 and the gains is: b 1 = a 1 S 11 + a 2 S 12 , b 2 = a 1 S 21 +a 2 S 22 , therefore, the relationship between the measured reflection coefficient Г 1 and the actual reflection coefficient Г 2 can be further obtained as follows:
设A=S12S21-S11S22,B=S11,C=-S22,A、B和C可作为校准参数,用于计算由第一端口16直接测得的测量反射系数Г1。则测量反射系数Г1与实际反射系数Г2之间的 关系式可以记为:也就是:即是得到第二方程式。Let A=S 12 S 21 -S 11 S 22 , B=S 11 , C=-S 22 , A, B and C can be used as calibration parameters for calculating the measured reflection coefficient Г directly measured by the first port 16 1 . Then, the relationship between the measured reflection coefficient Г 1 and the actual reflection coefficient Г 2 can be recorded as: That is: That is, the second equation is obtained.
上述的第二方程式经过变换可以得到:Г2A+B-Г2Г1C=Г1,即是得到第一方程式。The above second equation is transformed to obtain: Г 2 A + B - Г 2 Г 1 C = Г 1 , that is, the first equation is obtained.
请参阅图8,在某些实施方式中,步骤S4包括步骤S41:依据以下第三方程式计算驻波比:VSWR=(1+Г2)/(1-Г2),其中,VSWR为驻波比,Г2为实际反射系数。Referring to FIG. 8, in some embodiments, step S4 includes step S41: calculating a standing wave ratio according to the following third-party program: VSWR=(1+Г 2 )/(1-Г 2 ), where VSWR is a standing wave Ratio, Г 2 is the actual reflection coefficient.
请再参阅图5,在某些实施方式中,驻波检测装置20还包括存储器24,存储器24用于存储第三方程式:VSWR=(1+Г2)/(1-Г2),其中,VSWR为驻波比,Г2为实际反射系数。处理器22还可用于实施步骤S41,也就是说,处理器22还可用于依据第三方程式计算驻波比。具体地,处理器22可用于将实际反射系数Г2代入第三方程式以计算驻波比VSWR。Referring to FIG. 5 again, in some embodiments, the standing
请参阅图9,在某些实施方式中,步骤S1包括步骤:Referring to FIG. 9, in some embodiments, step S1 includes the steps of:
S11:检测天线12的入射波功率和反射波功率;和S11: detecting incident wave power and reflected wave power of the
S12:依据入射波功率、反射波功率和以下第四方程式计算测量反射系数:Г1=b/a,其中,Г1为测量反射系数,b为反射波功率,a为入射波功率。S12: Calculating the measured reflection coefficient according to the incident wave power, the reflected wave power, and the following fourth equation: Г 1 = b/a, where Г 1 is the measured reflection coefficient, b is the reflected wave power, and a is the incident wave power.
请参阅图10,在某些实施方式中,驻波检测装置20还包括检波器26和存储器24。存储器24用于存储第四方程式:Г1=b/a,其中,Г1为测量反射系数,b为反射波功率,a为入射波功率。检波器26和处理器22可分别用于实施步骤S11和S12。也就是说,检波器26可用于检测天线12的入射波功率和反射波功率。处理器22还可用于依据第四方程式计算测量反射系数。具体地,处理器22可用于将检波器26检测得到的入射波功率和反射波功率代入第四方程式中,并计算测量反射系数。Referring to FIG. 10, in some embodiments, the standing
具体地,检波器26是检出波动信号中某种有用信息的装置,用于识别波、振荡或信号的存在或变化的器件。检波器26的一端与天线组件10连接,用于等效检测天线12的入射波功率和反射波功率,检波器26的另一端与处理器22连接,用于向处理器22提供检测得到的入射波功率与反射波功率的结果,优选地,检波器26与天线组件10通过插接口连接以方便拆装检波器26。In particular,
请参阅图6、图10和图11,在某些实施方式中,天线组件10还包括测试电路板14,测试电路板14包括用于检测天线12的入射波功率的入射耦合支路148,和用于检测天线12的反射波功率的反射耦合支路146,步骤S11包括步骤:Referring to FIG. 6, FIG. 10 and FIG. 11, in some embodiments, the
S111:通过入射耦合支路148检测入射波功率;和
S111: detecting incident wave power through the
S112:通过反射耦合支路146检测反射波功率。S112: The reflected wave power is detected by the
在某些实施方式中,天线组件10还包括测试电路板14,测试电路板14包括用于检测天线12的入射波功率的入射耦合支路148,和用于检测天线12的反射波功率的反射耦合支路146,检波器26可用于实施步骤S111和S112,也就是说,检波器26可用于通过入射耦合支路148检测入射波功率,和通过反射耦合支路146检测反射波功率。In some embodiments, the
需要说明的是,步骤S111和步骤S112的实施次序可以是:先实施步骤S111再实施步骤S112,或者是先实施步骤S112再实施步骤S111。It should be noted that the implementation sequence of step S111 and step S112 may be: first step S111 and then step S112, or step S112 and step S111.
具体地,入射耦合支路148用于等效地输出天线12的入射波,反射耦合支路146用于等效地输出天线12的反射波,检波器26连接入射耦合支路148时可以检测天线12的入射波功率,连接反射耦合支路146时可以检测天线12的反射波功率。In particular, the
请再参阅图10,在某些实施方式中,测试电路板14还包括信号源142、双向耦合器144和切换开关149。信号源142用于产生信号。双向耦合器144与信号源142和天线12连接,并用于耦合信号源142与天线12之间的正反向功率以供入射耦合支路148和反射耦合支路146使用。切换开关149用于可切换地连接检波器26与入射耦合支路148或反射耦合支路146。Referring again to FIG. 10, in some embodiments,
也就是说,双向耦合器144将信号源142产生的入射波分别耦合到天线12和入射耦合支路148上,同时将天线12的反射波部分耦合到反射耦合支路146上。具体地,双向耦合器144将天线12的反射波耦合到反向耦合输出端1442并进入到反射耦合支路146,且将信号源142产生的入射波耦合到正向耦合输出端1444并进入到入射耦合支路148。切换开关149可以将入射耦合支路148或者反射耦合支路146连接到检波器26。That is, the
请结合图6,在某些实施方式中,反射耦合支路146包括第一衰减器1462,第一衰减器1462连接在双向耦合器144的反向耦合输出端1442与切换开关149之间。Referring to FIG. 6, in some embodiments, the
如此,第一衰减器1462可用于调节反射耦合支路146的反射波功率,以使得反射波功率落入到检波器26的检测范围内,保证检波器26的检测结果较准确。As such, the
在某些实施方式中,入射耦合支路148包括第二衰减器1482,第二衰减器1482连接在双向耦合器144的正向耦合输出端1444与切换开关149之间。In some embodiments, the
如此,第二衰减器1482可用于调节入射耦合支路148的入射波功率,以使得入射波功率落入到检波器26的检测范围内,保证检波器26的检测结果较准确。As such, the
在本说明书的描述中,参考术语“某些实施方式”、“一个实施方式”、“一些实施方式”、“示意性实施方式”、“示例”、“具体示例”、或“一些示例”的描述意指结合所述实施方式 或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施方式或示例中。在本说明书中,对上述术语的示意性表述不一定指的是相同的实施方式或示例。而且,描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施方式或示例中以合适的方式结合。In the description of the present specification, reference is made to the terms "some embodiments", "one embodiment", "some embodiments", "illustrative embodiments", "example", "specific examples", or "some examples" Description means combining the embodiments Particular features, structures, materials or features described in the examples are included in at least one embodiment or example of the invention. In the present specification, the schematic representation of the above terms does not necessarily mean the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples.
此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个所述特征。在本发明的描述中,“多个”的含义是至少两个,例如两个,三个,除非另有明确具体的限定。Moreover, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining "first" or "second" may include at least one of the features, either explicitly or implicitly. In the description of the present invention, "a plurality" means at least two, for example two, three, unless specifically defined otherwise.
尽管上面已经示出和描述了本发明的实施例,可以理解的是,上述实施例是示例性的,不能理解为对本发明的限制,本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型,本发明的范围由权利要求及其等同物限定。 Although the embodiments of the present invention have been shown and described, it is understood that the above-described embodiments are illustrative and are not to be construed as limiting the scope of the invention. The scope of the invention is defined by the claims and their equivalents.
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| CN201780016672.3A CN108925143B (en) | 2017-04-06 | 2017-04-06 | Standing wave detection method, standing wave detection device and electron gun |
| PCT/CN2017/079633 WO2018184177A1 (en) | 2017-04-06 | 2017-04-06 | Standing wave detecting method, standing wave detecting device, and electron gun |
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| CN114252701B (en) * | 2021-12-08 | 2024-08-23 | 中国电子科技集团公司第十三研究所 | Standing wave ratio measuring method and measuring terminal for microwave device |
| CN115051763B (en) * | 2022-06-16 | 2024-01-12 | 维沃移动通信有限公司 | Measurement methods, measuring devices and electronic equipment for voltage standing wave ratio |
| CN115290997B (en) * | 2022-06-27 | 2025-03-14 | 中国电子科技集团公司第十三研究所 | A waveguide port S parameter calibration method and device based on center of gravity |
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| CN102307363A (en) * | 2011-09-09 | 2012-01-04 | 京信通信系统(中国)有限公司 | Standing wave detection method and apparatus thereof and base station system |
| CN103592565A (en) * | 2012-08-16 | 2014-02-19 | 中兴通讯股份有限公司 | Position detection method and device for fault of cable |
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| US8767871B2 (en) * | 2011-06-08 | 2014-07-01 | Broadcom Corporation | Antenna tuning using the ratio of complex forward and reflected signals |
| CN103336182B (en) * | 2013-07-05 | 2015-10-07 | 中国计量科学研究院 | A kind of antenna phase center calibration system based on place insert loss |
| CN104579516B (en) * | 2014-12-04 | 2017-11-14 | 大唐移动通信设备有限公司 | A kind of standing-wave ratio detecting method and equipment |
| CN105911369A (en) * | 2016-06-07 | 2016-08-31 | 乐视控股(北京)有限公司 | Rapid confirmation method of antenna efficiency anechoic chamber testing |
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| CN101526564A (en) * | 2009-03-30 | 2009-09-09 | 武汉凡谷电子技术股份有限公司 | Detection device for power and standing wave ratio |
| CN102307363A (en) * | 2011-09-09 | 2012-01-04 | 京信通信系统(中国)有限公司 | Standing wave detection method and apparatus thereof and base station system |
| CN103592565A (en) * | 2012-08-16 | 2014-02-19 | 中兴通讯股份有限公司 | Position detection method and device for fault of cable |
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