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WO2018176194A1 - Laser flexible à base de cristal photonique et son procédé de préparation - Google Patents

Laser flexible à base de cristal photonique et son procédé de préparation Download PDF

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Publication number
WO2018176194A1
WO2018176194A1 PCT/CN2017/078286 CN2017078286W WO2018176194A1 WO 2018176194 A1 WO2018176194 A1 WO 2018176194A1 CN 2017078286 W CN2017078286 W CN 2017078286W WO 2018176194 A1 WO2018176194 A1 WO 2018176194A1
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WIPO (PCT)
Prior art keywords
layer
type
hole
photonic crystal
thin plate
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Ceased
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PCT/CN2017/078286
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English (en)
Chinese (zh)
Inventor
张昭宇
周杰
何克波
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Chinese University of Hong Kong Shenzhen
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Chinese University of Hong Kong Shenzhen
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Priority to PCT/CN2017/078286 priority Critical patent/WO2018176194A1/fr
Priority to CN201780000166.5A priority patent/CN107112720B/zh
Publication of WO2018176194A1 publication Critical patent/WO2018176194A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/3436—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)P

Definitions

  • the present invention belongs to the field of laser technologies, and in particular, to a photonic crystal-based flexible laser and a method for fabricating the same.
  • Lasers have a wide range of applications in scientific research, medical, military, engineering construction and other fields. With the development of society and the advancement of technology, in order to broaden the application range of lasers and enhance their durability, the demand for new lasers with high efficiency, environmental friendliness, and flexible stretchability has gradually increased.
  • a single-shot lasing of red light near 670 nm is achieved in the visible spectrum, and the lasing wavelength can be moved around 670 nm by changing the structural parameters.
  • the lasing of a certain wavelength can only be achieved by a single structural parameter design, and the structural parameters are fixed and unchangeable after design.
  • the preparation of micro-nano lasers is mostly performed by processing a semiconductor substrate material to form a desired device structure. Therefore, after the laser is fabricated, it is fixed on the substrate material, and its device size and structure. The model cannot be adjusted.
  • the homogenous laser uses a laser cavity design such as a distributed feedback type, a nanowire type, various nano-discs based on the whispering gallery mode, a ring, and a polygon. These devices have the characteristics of large resonant cavity, high resonance mode and difficult to handle, and thus cause disadvantages such as large mode volume and low quality factor.
  • the object of the present invention is to overcome the above-mentioned deficiencies of the prior art, and to provide a photonic crystal-based flexible laser and a preparation method thereof, aiming at solving the problem that the structural parameters of the existing laser are not adjustable, the mode volume is large, and the quality factor is low. technical problem.
  • a photonic crystal-based flexible laser comprising an L3 type photonic crystal thin plate inside the flexible laser and a flexible material layer enclosing the L3 type photonic crystal thin plate;
  • the L3 type photonic crystal thin plate includes a defect region located at a center of the L3 type photonic crystal thin plate and a hole region formed at a periphery of the defect region, the hole region including a plurality of uniform size and vertically penetrating the L3 type photonic crystal a hole of the thin plate, the size of the defect area is a size corresponding to a region of three parallelly disposed hole sites, and the L3 photonic crystal thin plate comprises a first protective layer, a first coating layer, a light emitting layer, which are sequentially stacked. a second coating, a second protective layer.
  • the photonic crystal-based flexible laser provided by the present invention mainly combines nanotechnology and flexible technology to realize miniaturization of the laser device; the same L3 photonic crystal thin plate is wrapped in a flexible material, thereby realizing
  • the flexibility of the laser makes the structural parameters adjustable and the output characteristics adjustable, which produces a technical effect that is significantly better than the prior art.
  • the flexible laser of the present invention can be used as a light source in an integrated optical chip for short-distance high-speed optical communication, as well as a sensor device in flexible electronic and wearable electronic devices, and can also be used as a biosensor for biological chemical detection and spectroscopy. In areas such as imaging, it has broad application prospects.
  • a method for fabricating a photonic crystal-based flexible laser comprising the steps of:
  • the method for preparing a flexible laser directly generates an L3 type photonic crystal thin plate by using an electron beam exposure, an inductive coupling or the like to activate an ion etching, oxidation and etching process on a previously designed epitaxial wafer, and uses a flexible material.
  • the L3 type photonic crystal thin plate is mechanically removed from the epitaxial wafer, thereby realizing substrate transfer; the process is simple, easy to operate and realize, and the flexible laser obtained by the preparation method not only realizes the laser
  • the miniaturization of the device realizes the flexibility of the laser, the structural parameters are adjustable, and the output characteristics are adjustable.
  • FIG. 1 is a schematic cross-sectional structural view of a flexible laser according to an embodiment of the present invention
  • FIG. 2 is a schematic structural view of a L3 photonic crystal thin plate on a III-V epitaxial wafer in a flexible laser according to an embodiment of the present invention
  • [0027] 122 a second U-type InAlGaP layer
  • [0030] 141 a first U-type InAlGaP layer; [0031] 142: an N-type InAlGaP layer;
  • [0034] 2 a layer of flexible material
  • an embodiment of the present invention provides a photonic crystal-based flexible laser, the structure of which is shown in FIG. 1 and FIG.
  • the flexible laser includes an L3 type photonic crystal thin plate 1 inside a flexible laser and a flexible material layer 2 enclosing an L3 type photonic crystal thin plate 1;
  • the L3 type photonic crystal thin plate 1 includes a defective region 16 at the center of the L3 type photonic crystal thin plate 1 and
  • a hole region 10 is formed in the periphery of the defect region 16, and the hole region 10 includes a plurality of holes (not shown) which are uniform in size and vertically penetrate the L3 type photonic crystal thin plate 1.
  • the size of the defect region 16 is three parallel holes.
  • the size of the corresponding region of the dot corresponds to the size of the hole region formed by the three parallel holes, and the L3 photonic crystal thin plate 1 includes the first protective layer 15 , the first coating layer 14 , the light emitting layer 13 , and the first layer The second coating layer 12 and the second protective layer 11.
  • the photonic crystal-based flexible laser provided by the present invention mainly combines nanotechnology and flexible technology to realize miniaturization of the laser device; the same L3 photonic crystal thin plate 1 is wrapped in the flexible material layer 2
  • the flexibility of the laser is realized, the structural parameters are adjustable, the output characteristics are adjustable, and the technical effect produced by the laser is significantly superior to the prior art.
  • the flexible laser of the present invention can be used as a light source in an integrated optical chip for short-distance high-speed optical communication, as well as a sensor device in flexible electronic and wearable electronic devices, and can also be used as a biosensor for biological chemical detection and spectroscopy. In areas such as imaging, it has broad application prospects.
  • the L3 type photonic crystal thin plate 1 in the flexible illuminator of the embodiment has a thickness ranging from 180 nm to 200. Nm, and the thickness of the flexible laser ranges from 2 ⁇ to 3 ⁇ .
  • the flexible laser is optimized to be miniaturized; the thickness of the L3 photonic crystal thin plate 1 is preferably 18 Onm, and the thickness of the flexible laser is preferably 2 ⁇ , under which the L3 photon is not only
  • the nano-size of the crystal thin plate 1 has better luminescence properties, and the flexibility of the flexible laser is best, that is, the comprehensive performance of the flexible laser is optimized.
  • the L3 type photonic crystal thin plate 1 in the flexible illuminator of the embodiment has a period ⁇ ranging from 0.14 ⁇ m to 0.18 ⁇ m, and the radius of the hole ranges from 0.25 ⁇ to 0.29 ⁇ .
  • the period ⁇ refers to the spacing between the centers of the adjacent two of the plurality of holes having a uniform distance in the hole region 10.
  • the flexible laser formed by the parameter range of the period ⁇ and the hole radius provided by the embodiment of the present invention is more likely to form a photon gap; the length of the cavity in the L3 type photonic crystal sheet is close to the emission wavelength, thereby reducing the mode volume of the laser and improving The quality factor, thus significantly improving the luminescent properties of the flexible laser.
  • the hole region 10 is provided with the first hole 101 and the second hole 102 in the same straight line with the defect region 16 and at the two ends of the defect region 16, and the center distance between the first hole 101 and the second hole 102
  • the hole region 10 is further provided with a third hole 103 which is in line with the defect region 16 and adjacent to the first hole 101, and is in line with the defect region 16 and adjacent to the second hole 102.
  • the fourth hole 104, the first hole 101 and the third hole 103 have a center distance of 0.8 ⁇ , and the second hole 102 and the fourth hole 104 have a center distance of 0.8 ⁇ .
  • the photonic crystal L3 defect refers to the elimination of three holes in the center of the photonic crystal pattern.
  • the L3 photonic crystal thin plate 1 is uniformly arranged with a plurality of holes ⁇ , and the first ends of the defect regions 16 are The predetermined hole location of the hole 101 and the second hole 102 (the hole site is formed on the prefabricated sheet to form a hole ⁇ , the original design of the prefabricated sheet is prepared for generating the hole), and is respectively displaced away from the center portion.
  • the third hole 103 and the fourth hole 104 are disposed, and the displacement amount is 0.2 ⁇ , thereby forming a specific distance 1.4 ⁇ , the first hole 101, and the third of the center distance between the two holes of the first hole 101 and the second hole 102 in this embodiment.
  • the specific distance between the center distances of the two holes of the hole 103 is 0.8 ⁇
  • the specific distance between the center distances of the two holes of the second hole 102 and the fourth hole 104 is 0.8 ⁇ .
  • the center distance between two holes refers to the distance between the holes of two adjacent holes.
  • the first hole 101 and the second hole 102 which are in the same straight line with the defect region 16 and located at both ends of the defect region 16 are not displaced in the hole region 10, that is, the first hole 101 and the second hole 102 are not displaced.
  • the center distance between the two holes is 4 ⁇
  • the center distance between the two holes of the first hole 101 and the third hole 103 is ⁇
  • the second hole 102 and The center distance of the two holes of the fourth hole 104 is T; however, the radius of the first hole 101 and the second hole 102 is enlarged or reduced, that is, the radius of the first hole 101 and the second hole 102 is the radius of the other holes in the hole area 10. 0.8-1.2 times, and the radius of the first hole 101 and the second hole 102 are not equal to the other holes in the hole area 10
  • the center distance between the two holes of the first hole 101 and the second hole 102 is 4.4 ⁇ (that is, the displacement with a displacement of 0.2 ⁇ ), and the first hole is the same.
  • the radius of the 101 and second holes 102 is adjusted to be 0.8-1.2 times the radius of the other holes in the hole region 10, but is not equal to the other holes; thus, the luminescence performance of the photonic crystal thin plate 1 is optimized.
  • the flexible material 2 in the flexible illuminator of the present embodiment comprises at least one of PMDS, PET, PEN, PEEK, PES, PAR, PCO, PNB and PI, and the flexible material 2 is preferably PMDS.
  • the flexible material 2 may be a semi-crystalline thermoplastic polymer such as PMDS (polydimethylsiloxane), PET (polyethylene terephthalate), PEN (polyethylene naphthalate) and PEEK ( Polyetheretherketone).
  • PET and PEN as flexible materials 2 exhibit some important properties, including inherently good transparency, simple processing, good mechanical properties, high barrier to oxygen and water vapor permeability, but they are not resistant to high temperatures, low temperature deposition of ITO (Indium Tin Oxide) ⁇ , device performance is reduced.
  • the flexible material 2 can also be an amorphous polymer such as PES (polyether sulfone). PES can be melt extruded or solvent injection molded, it has good transparency and high operating ceiling temperature, but it is expensive and solvent resistant.
  • Flexible material 2 can also be a non-crystalline high glass transition temperature (Tg) polymer such as PAR (polyarylate), PCO, PNB (p-nitrobenzoic acid) and PI (polyimide), PI has good Thermal stability, good mechanical properties and chemical properties, but low transparency and relatively expensive; in addition, some fabric materials can also be used as the flexible material layer 2, and PMDS is the most preferred material among them.
  • Tg non-crystalline high glass transition temperature
  • the photonic crystal thin plate 1 may be made of a III-V semiconductor material (for example, an element of aluminum, gallium, indium, antimony, and elemental nitrogen, phosphorus, arsenic, antimony, and antimony).
  • a III-V semiconductor material for example, an element of aluminum, gallium, indium, antimony, and elemental nitrogen, phosphorus, arsenic, antimony, and antimony.
  • the composition of the compound) is made, or made of a Group II-VI semiconductor material (for example, a compound consisting of zinc, cadmium, mercury, and oxygen, sulfur, selenium, or antimony), or a Group IV semiconductor material (such as Made of silicon material, carbon organic material, etc., and the planar structure design (such as period, radius, and hole displacement) of the photonic crystal thin plate needs to be according to the fluorescence spectrum characteristics of the semiconductor material used in the cycle and radius of the present invention. Hole displacement range Make adjustments within.
  • the photonic crystal thin plate 1 is preferably made of a III-V semiconductor material.
  • the first protective layer 15 in the flexible illuminator of the embodiment is an N-type InGaP (gallium indium phosphide) layer, and the thickness of the N-type InGaP layer is 10-20 nm; the second protective layer 11 is A P-type InGaP layer, and the P-type In GaP layer has a thickness of 10-20 nm.
  • the N-type InGaP layer is doped with silicon, and the P-type InGaP layer is doped with zinc.
  • the two-layer protective layer can effectively protect the inside of the photonic crystal thin plate 1 from being oxidized to prevent external interference.
  • the thickness of the N-type InGaP layer and the P-type InGaP layer is lOnm ⁇ , and the protection performance is optimized.
  • the first coating layer 14 in the flexible illuminator of the embodiment includes an N-type InAlGaP (gallium phosphide) layer 142 and a first U-type InAlGaP layer 141, and an N-type InAlGaP layer.
  • 142 is adjacent to the first protective layer 15, the thickness of the N-type InAlGaP layer 142 is in the range of 30 nm to 40 nm, the thickness of the first U-type InAlGaP layer 141 is in the range of 28 nm to 38 nm , and the second coating layer 12 includes the P-type layered.
  • the InAlGaP layer 121 and the second U-type InAlGaP layer 122, the P-type InAlGaP layer 121 is adjacent to the second protective layer 11, and the thickness of the P-type InAlGaP layer 12 1 ranges from 20 nm to 30 nm, and the thickness of the second U-type InAlGaP layer 122 The range is from 38 nm to 48 nm.
  • the N-type InAlGaP layer 142 is doped with silicon
  • the P-type InAlGaP layer 121 is doped with zinc
  • the first U-type InAlGaP layer 14 1 and the second U-type InAlGaP layer 122 are not doped with the true layer.
  • the first coating layer 14 and the second coating layer 12 are used to limit the light field in the flexible laser.
  • the thickness of the N-type InAlGaP layer 142 is preferably 30 nm, and the thickness of the first U-type InAlGaP layer 141 is preferably 28 nm.
  • the thickness of the P-type InAlGaP layer 121 is preferably 20 nm, and the thickness of the second U-type InAlGaP layer 122 is preferably 38 nm, so that the light field limiting effect is optimized.
  • the light-emitting layer 13 in the flexible illuminator of the embodiment includes at least one U-type InGa P quantum well layer and at least two U-type InAlGaP spacer layers disposed in a stacked manner, and the U-type InAlGaP spacer layer is disposed on Between the U-type InGa P quantum well layers and between the U-type InGaP quantum well layer and the first U-type InAlGaP layer and the second U-type InAl GaP layer; the thickness of the U-type InGaP quantum well layer is 7-17 nm, The thickness of the U-type InAlGaP spacer layer is 10-20 nm.
  • two U-type InGaP quantum well layers and three U-type InAlGaP spacer layers are preferably used, and the U-type InAlGaP spacer layer is erroneously arranged in the U-type InGaP quantum well layer, and the thickness of the U-type InGaP quantum well layer is preferably 7 nm.
  • the thickness of the U-type InAlGaP spacer layer is preferably 10 nm. In the range of the number of layers and the thickness, the illuminating performance of the flexible illuminator of the present embodiment is optimized.
  • an embodiment of the present invention further provides a method for fabricating the above flexible laser.
  • the L3 photonic crystal thin plate is grown on the III-V epitaxial wafer, as shown in FIG. 2 .
  • the preparation method includes Next steps:
  • S01 providing an epitaxial wafer and a flexible material
  • S02 sequentially forming a first protective layer 15, a first coating layer 14, a light emitting layer 13, a second coating layer 12, and a second protective layer 11 on the III-V epitaxial wafer, and the first protective layer 15
  • the first coating layer 14, the luminescent layer 13, the second coating layer 12 and the second protective layer 11 constitute a prefabricated sheet;
  • S03 The above prefabricated sheet is designed according to the L3 defect to form an L3 type photonic crystal sheet 1;
  • S04 After melting the flexible material into a liquid flexible material, it is coated on the L3 photonic crystal thin plate 1 to form a flexible material layer 2 after the liquid flexible material is solidified, and the epitaxial wafer is peeled off to obtain a flexible laser.
  • the preparation method of the flexible laser provided by the invention is directly processed on a pre-designed epitaxial wafer by electron beam exposure, etching, oxidation and etching to form an L3 photonic crystal thin plate, and is first liquefied and coated with a flexible material.
  • the solidification is mechanically removed from the epitaxial wafer to carry out substrate transfer; the process is simple, easy to operate and realize, and the flexible laser obtained by the preparation method not only realizes miniaturization of the laser device, but also realizes flexibility of the laser. , its structural parameters are adjustable, and the output characteristics are adjustable.
  • the epitaxial wafer may be made of a III-V semiconductor material or a II-VI semiconductor material, and in the embodiment of the invention, a III-V semiconductor material is preferred.
  • a III-V epitaxial wafer made of a III-V semiconductor material includes an N-type GaAs (gallium arsenide) substrate 3, an N-type GaAs buffer layer 4, and an N-type AlGaAs (aluminum arsenic) stacked in this order from bottom to top.
  • the sacrificial layer 5, and the N-type GaAs substrate 3 has a thickness in the range of 1-2 ⁇ m, the ⁇ -type GaAs buffer layer 4 has a thickness of 100 nm, and the N-type AlGaAs sacrificial layer 3 has a thickness of 700 nm.
  • the N-type GaAs substrate 3 can also be replaced with a silicon substrate.
  • the III-V epitaxial wafer is made of a semiconductor material composed of a trivalent element (for example, aluminum, gallium, indium, antimony) and a pentavalent element (for example, nitrogen, phosphorus, arsenic, antimony, antimony) in the chemical periodic table.
  • the epitaxial wafer, the N-type GaAs buffer layer 4 and the N-type AlGaAs (aluminum gallium arsenide) sacrificial layer 5 in this embodiment are doped with silicon, and the L3 type photonic crystal thin plate 1 is not only easy under the preferable thickness condition.
  • the first protective layer 15 and the first coating are sequentially formed on the III-V epitaxial wafer.
  • the layer 14, the luminescent layer 13, the second coating layer 12, and the second protective layer 11, each of which forms a functional layer, is subjected to electron beam exposure, inductive coupling, etc. to activate ion etching, oxidation, and etching processes. These are routine choices in the art and are not described here.
  • the photonic crystal L3 defect design idea refers to canceling three holes in the center of the photonic crystal pattern.
  • the prefabricated sheet is processed to form a uniform size, And vertically intersecting the plurality of holes ⁇ of the thin plate, the predetermined holes of the first hole 101 and the second hole 102 at the two ends of the defect region 16 are respectively displaced from the central portion into the third hole 103 and the fourth hole 104, and the displacement The amount is 0.2T.
  • the first hole 101 and the second hole 102 are not displaced, that is, the center distance between the two holes of the first hole 101 and the second hole 102 is 4, but the radius of the first hole 101 and the second hole 102 is enlarged or reduced. That is, the radius of the first hole 101 and the second hole 102 is 0.8-1.2 times the radius of other holes in the hole region 10, but is not equal to the other holes.
  • the L3 type photonic crystal thin plate 1 includes a defect region 16 at the center of the L3 type photonic crystal thin plate 1 and formed on the periphery of the defective region 16
  • the hole region 10, the hole region 10 includes a plurality of holes of uniform size and perpendicularly penetrating the L3 type photonic crystal thin plate 1.
  • the size of the defect region 16 is the size of a region corresponding to three parallel hole positions, and the L3 type photonic crystal thin plate
  • the period T of 1 is 0.14 ⁇ m, and the radius of the hole is 0.25 ⁇
  • the hole area 10 is provided with the first hole 101 and the second hole 102 which are in the same straight line with the defect area 16 and at both ends of the defect area 16, and the first hole 101
  • the center distance between the two holes of the second hole 102 is 4.4 ⁇
  • the hole area 10 is further provided with a third hole 103 which is in line with the defect area 16 and adjacent to the first hole 101, and is in the same line as the defect area 16.
  • the fourth hole 104 adjacent to the second hole 102 the center distance between the two holes of the first hole 101 and the third hole 103 is 0.8 ⁇ , and the center distance between the two holes of the second hole 102 and the fourth hole 104 is 0.8 ⁇ .
  • the L3 type photonic crystal thin plate 1 includes a lOnm N type InGaP layer which is laminated in this order, 15 nm
  • the L3 type photonic crystal thin plate 1 includes a defect region 16 at the center of the L3 type photonic crystal thin plate 1 and formed on the periphery of the defective region 16
  • the hole region 10, the hole region 10 includes a plurality of holes of uniform size and perpendicularly penetrating the L3 type photonic crystal thin plate 1.
  • the size of the defect region 16 is the size of a region corresponding to three parallel hole positions, and the L3 type photonic crystal thin plate 1 cycle T of 0 .1 8 ⁇ , the radius of the holes is 0.29 ⁇ ; region 10 is provided with apertures 16 on the same straight line, and the first hole across the defective area 10116, the second defective area aperture 102, first aperture The center distance between the two holes of the first hole 102 and the second hole 102 is 4.4 ⁇ ; the hole area 10 is further provided with a third hole 103 which is in line with the defect area 16 and adjacent to the first hole 101, and is identical to the defect area 16.
  • the fourth hole 104 adjacent to the second hole 102 is straight, and the center distance between the two holes of the first hole 101 and the third hole 103 is 0.8 ⁇ , and the center distance between the holes of the second hole 102 and the fourth hole 104 is 0.8. Hey.
  • the L3 type photonic crystal thin plate 1 includes a lOnm N type InGaP layer which is laminated in order, 15 nm, 30 nm
  • N-type InAlGaP layer 142 28nm first U-type InAlGaP layer 141, 2 layers 7nm
  • Light-emitting layer 13 composed of U-type InGaP quantum well layer and three layers of 10 nm U-type InAlGaP spacer layer (U-type InAlGaP spacer layer is erroneously intercalated with U-type InGaP quantum well layer), 38 nm second U-type InAlGaP layer 122, 20 nm P-type The InAlGaP layer 121 and the 10 nm P-type InGaP layer 11.
  • the L3 type photonic crystal thin plate 1 includes a defect region 16 at the center of the L3 type photonic crystal thin plate 1 and formed on the periphery of the defective region 16
  • the hole region 10 includes a plurality of holes of uniform size and perpendicularly penetrating the L3 type photonic crystal thin plate 1, and the size of the defect region 16 is the size of the region corresponding to three parallel hole positions, the L3 type Photonic crystal period T of the sheet 1 0 .1 6 ⁇ , the radius of the holes is 0.26 ⁇ ; region 10 is provided with apertures 16 on the same straight line defective area, and with the first hole across the defective area 10116, the second hole 102, The center distance between the two holes of the first hole 101 and the second hole 102 is 4.4 ⁇ ; the hole area 10 is further provided with a third hole 103 which is in line with the defect area 16 and adjacent to the
  • the L3 type photonic crystal thin plate 1 includes a lOnm N type InGaP layer which is laminated in this order, 15 nm
  • N-type InAlGaP layer 142 28nm first U-type InAlGaP layer 141, 2 layers 7nm
  • Light-emitting layer 13 composed of U-type InGaP quantum well layer and three layers of 10 nm U-type InAlGaP spacer layer (U-type InAlGaP spacer layer is erroneously intercalated with U-type InGaP quantum well layer), 38 nm second U-type InAlGaP layer 122, 20 nm P-type The InAlGaP layer 121 and the 10 nm P-type InGaP layer 11.
  • the L3 type photonic crystal thin plate 1 includes a defect region 16 at the center of the L3 type photonic crystal thin plate 1 and formed on the periphery of the defective region 16
  • the hole region 10, the hole region 10 includes a plurality of holes of uniform size and perpendicularly penetrating the L3 type photonic crystal thin plate 1.
  • the size of the defect region 16 is the size of a region corresponding to three parallel hole positions, and the L3 type photonic crystal thin plate 1 cycle T of 0 .1 6 ⁇ , the radius of the holes is 0.26 ⁇ ; aperture region 10 is provided in-line with the defective area 16, and the first hole 101 and both ends of the defective area 16, a second hole 102, a first hole The center distance between the two holes of 101 and the second hole 102 is 4 ⁇ ; the radius of the first hole 101 and the second hole 102 is 0.8 times the radius of the other holes in the hole area 10.
  • the L3 type photonic crystal thin plate 1 includes a lOnm N type InGaP layer which is laminated in this order, 15 nm
  • N-type InAlGaP layer 142 28nm first U-type InAlGaP layer 141, 2 layers 7nm
  • Light-emitting layer 13 composed of U-type InGaP quantum well layer and three layers of 10 nm U-type InAlGaP spacer layer (U-type InAlGaP spacer layer is erroneously intercalated with U-type InGaP quantum well layer), 38 nm second U-type InAlGaP layer 122, 20 nm P-type The InAlGaP layer 121 and the 10 nm P-type InGaP layer 11.
  • Example 5 A flexible laser having a thickness of 2 ⁇ m, including 18 Onm inside a flexible laser
  • the L3 type photonic crystal thin plate 1 includes a defect region 16 at the center of the L3 type photonic crystal thin plate 1 and formed on the periphery of the defective region 16
  • the hole region 10, the hole region 10 includes a plurality of holes of uniform size and perpendicularly penetrating the L3 type photonic crystal thin plate 1.
  • the size of the defect region 16 is the size of a region corresponding to three parallel hole positions, and the L3 type photonic crystal thin plate
  • the period T of 1 is 0.14 ⁇ m, and the radius of the hole is 0.25 ⁇
  • the hole area 10 is provided with the first hole 101 and the second hole 102 which are in the same straight line with the defect area 16 and at both ends of the defect area 16, and the first hole 101
  • the center distance between the two holes of the second hole 102 is 4.4 ⁇
  • the hole area 10 is further provided with a third hole 103 which is in line with the defect area 16 and adjacent to the first hole 101, and is in the same line as the defect area 16.
  • the center distance between the two holes of the first hole 101 and the third hole 103 is 0.8 ⁇
  • the center distance between the two holes of the second hole 102 and the fourth hole 104 is 0.8 ⁇
  • the first hole 101 and the second hole 10 The radius of 2 is 1.2 times the radius of the other holes in the hole region 10.
  • the L3 type photonic crystal thin plate 1 includes a lOnm N type InGaP layer which is laminated in this order, 15 nm
  • N-type InAlGaP layer 142 28nm first U-type InAlGaP layer 141, 2 layers 7nm
  • Light-emitting layer 13 composed of U-type InGaP quantum well layer and three layers of 10 nm U-type InAlGaP spacer layer (U-type InAlGaP spacer layer is erroneously intercalated with U-type InGaP quantum well layer), 38 nm second U-type InAlGaP layer 122, 20 nm P-type The InAlGaP layer 121 and the 10 nm P-type InGaP layer 11.
  • S11 providing a III-V epitaxial wafer and a PDMS flexible material.
  • the III-V epitaxial wafer includes a 1-2 ⁇ ⁇ type GaAs substrate or a silicon substrate 3, a 100 nm N-type GaAs buffer layer 4, and a 700 nm N-type AlGaAs sacrificial layer 5 which are stacked in this order from bottom to top.
  • S12 sequentially forming an N-type InGaP layer 15, an N-type InAlGaP layer 142, a first U-type InAlGaP layer 141, a 2-layer U-type InGaP quantum well layer, and a 3-layer U-type InAlGaP spacer on the III-V epitaxial wafer.
  • a light-emitting layer 13 composed of layers (a U-type InAlGaP spacer layer interlaces a U-type InGaP quantum well layer), a second U-type InAlGaP layer 122, a P-type InAlGaP layer 121, and a 10 nm P-type InGaP layer 11 to form a prefabricated sheet;
  • the formation of a functional layer is subjected to electron beam exposure, inductive coupling to activate ion etching, oxidation and etching processes.
  • S13 The L3 type photonic crystal thin plate 1 is processed by processing the above-mentioned prefabricated sheet according to the L3 defect design principle.
  • the L3 defect is designed to: form a plurality of holes ⁇ on the prefabricated sheet to form a uniform size and vertically penetrate the thin plate, and the predetermined holes at the first hole 101 and the second hole 102 at both ends of the defect region 16 are respectively away from each other.
  • the center portion is displaced into the third hole 103 and the fourth hole 104, and the displacement amount is 0.2T.
  • S21 providing a III-V epitaxial wafer and a PDMS flexible material.
  • the III-V epitaxial wafer includes a 1-2 ⁇ ⁇ type GaAs substrate or a silicon substrate 3, a 100 nm N-type GaAs buffer layer 4, and a 700 nm N-type AlGaAs sacrificial layer 5 which are stacked in this order from bottom to top.
  • S22 sequentially forming an N-type InGaP layer 15, an N-type InAlGaP layer 142, a first U-type InAlGaP layer 141, a 2-layer U-type InGaP quantum well layer, and a 3-layer U-type InAlGaP spacer on the III-V epitaxial wafer.
  • a light-emitting layer 13 composed of layers (a U-type InAlGaP spacer layer interlaces a U-type InGaP quantum well layer), a second U-type InAlGaP layer 122, a P-type InAlGaP layer 121, and a 10 nm P-type InGaP layer 11 to form a prefabricated sheet;
  • the formation of a functional layer is subjected to electron beam exposure, inductive coupling to activate ion etching, oxidation and etching processes.
  • S23 Forming the L3 type photonic crystal thin plate 1 on the prefabricated sheet according to the L3 defect design principle.
  • the L3 defect is designed to: form a plurality of holes ⁇ on the prefabricated sheet to form a uniform size and vertically penetrate the thin plate, and the center distance between the first hole 101 and the second hole 102 at the two ends of the defect region 16 is 4T. That is, the first hole 101 and the second hole 102 are not displaced, but the radius of the first hole 101 and the second hole 102 is reduced by 0.8 times the radius of the other holes in the hole region 10.
  • the III-V epitaxial wafer includes a 1-2 ⁇ m type GaAs substrate or a silicon substrate 3, a 100 nm N-type GaAs buffer layer 4, and a 700 nm N-type AlGaAs sacrificial layer 5 which are stacked in this order from bottom to top.
  • S32 sequentially forming an N-type InGaP layer 15, an N-type InAlGaP layer 142, a first U-type InAlGaP layer 141, a 2-layer U-type InGaP quantum well layer, and a 3-layer U-type InAlGaP spacer on the III-V epitaxial wafer.
  • a light-emitting layer 13 composed of layers (a U-type InAlGaP spacer layer interlaces a U-type InGaP quantum well layer), a second U-type InAlGaP layer 122, a P-type InAlGaP layer 121, and a 10 nm P-type InGaP layer 11 to form a prefabricated sheet;
  • the formation of a functional layer is subjected to electron beam exposure, inductive coupling to activate ion etching, oxidation and etching processes.
  • S33 Forming the L3 type photonic crystal thin plate 1 on the prefabricated sheet according to the L3 defect design principle.
  • the L3 defect is designed to: form a plurality of holes ⁇ on the prefabricated sheet to form a uniform size and vertically penetrate the thin plate, and the predetermined holes at the first hole 101 and the second hole 102 at both ends of the defect region 16 are respectively away from each other.
  • the center portion is displaced into the third hole 103 and the fourth hole 104, and the displacement amount is 0.2T, and the radius of the first hole 101 and the second hole 102 is enlarged, which is 1.2 times the radius of the other holes in the hole region 10.
  • the method for preparing a flexible laser of the present embodiment after the PDMS liquid flexible material is coated on one side of the L3-type photonic crystal thin plate 1 grown on the III-V epitaxial wafer, it penetrates into the III-V epitaxial wafer and the L3 photonic crystal. Between the sheets 1, such that after the PDMS liquid flexible material is solidified, the PDMS flexible material completely wraps the L3 type photonic crystal sheet 1. Therefore, the flexible laser obtained by the preparation method not only realizes the miniaturization of the laser device, but also realizes the flexibility of the laser, and the structural parameters are adjustable, and the output characteristics are adjustable.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

L'invention concerne un laser flexible à base de cristal photonique et son procédé de préparation. Le laser flexible comprend une lame mince de cristal photonique de type L3 (1) à l'intérieur du laser flexible et une couche de matériau flexible (2) entourant la lame mince de cristal photonique de type L3. La lame mince de cristal photonique de type L3 (1) comprend une région de défauts (16) au centre de la lame mince de cristal photonique de type L3 (1) et une région de trous (10) formée à la périphérie de la région de défauts, la région de trous (10) comprenant une pluralité de trous de taille uniforme et pénétrant perpendiculairement à travers la lame mince de cristal photonique de type L3 (1), et la région de défauts (16) ayant une taille égale à la taille d'une zone correspondant à trois sites de trous disposés parallèlement. La lame mince de cristal photonique L3 (1) comprend une première couche protectrice (15), une première couche de revêtement (14), une couche électroluminescente (13), une seconde couche de revêtement (12) et une seconde couche protectrice (11) empilées séquentiellement. Le laser flexible met non seulement en oeuvre une miniaturisation de dispositifs laser, mais permet également une flexibilité du laser, de telle manière que des paramètres structurels et des caractéristiques de sortie des lasers soient réglables.
PCT/CN2017/078286 2017-03-27 2017-03-27 Laser flexible à base de cristal photonique et son procédé de préparation Ceased WO2018176194A1 (fr)

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WO2018176194A1 (fr) * 2017-03-27 2018-10-04 香港中文大学（深圳） Laser flexible à base de cristal photonique et son procédé de préparation
CN107732644B (zh) * 2017-10-27 2024-12-17 深圳市浩铼科技有限责任公司 一种激光器种子源系统及制备方法
CN110068549B (zh) * 2018-01-22 2021-09-17 天津大学 一种可忽略力光耦合效应的柔性光子器件薄膜堆叠结构
CN111864536A (zh) * 2020-08-06 2020-10-30 香港中文大学（深圳） 一种硅基量子点光子晶体激光器及加工方法

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