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WO2018167895A1 - Dispositif de pulvérisation cathodique - Google Patents

Dispositif de pulvérisation cathodique Download PDF

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Publication number
WO2018167895A1
WO2018167895A1 PCT/JP2017/010522 JP2017010522W WO2018167895A1 WO 2018167895 A1 WO2018167895 A1 WO 2018167895A1 JP 2017010522 W JP2017010522 W JP 2017010522W WO 2018167895 A1 WO2018167895 A1 WO 2018167895A1
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WO
WIPO (PCT)
Prior art keywords
electrode
sputtering apparatus
vacuum vessel
substrate
ground
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2017/010522
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English (en)
Japanese (ja)
Inventor
一成 関谷
正治 田名部
忠 井上
浩 笹本
辰憲 佐藤
信昭 土屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to PCT/JP2017/010522 priority Critical patent/WO2018167895A1/fr
Publication of WO2018167895A1 publication Critical patent/WO2018167895A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Definitions

  • the present invention relates to a sputtering apparatus for forming an insulating film on a substrate.
  • Japanese Patent Application Laid-Open No. 2014-91861 describes a sputtering apparatus for forming an insulating film such as an oxide film or a nitride film on a substrate.
  • This sputtering apparatus includes a backing plate (hereinafter referred to as an electrode) on which a target is mounted, a high-frequency power source that supplies high-frequency power to the electrode, and a stage that supports the substrate.
  • an impedance matching circuit is indispensable between the high-frequency power source and the electrode. Without the impedance matching circuit, the impedance condition for igniting the plasma and the impedance condition for maintaining the plasma and forming the insulating film on the substrate cannot be satisfied.
  • the impedance matching circuit usually has a capacitor arranged in series between the high-frequency power source and the electrode. This capacitor blocks a DC component between the high frequency power source and the electrode.
  • a blocking capacitor that blocks a direct current component may be disposed between the impedance matching circuit and the electrode.
  • the average voltage of the electrode is stabilized at a negative voltage called a self-bias voltage (ie, the electrode DC component of the voltage is not zero).
  • a self-bias voltage ie, the electrode DC component of the voltage is not zero.
  • a material (for example, copper) released from the electrode by sputtering can be taken into a film formed on the substrate, and the characteristics of the film can be deteriorated. That is, the material released from the electrode by sputtering can contaminate the film formed on the substrate.
  • the electrode is covered with a shield through an insulating film and the shield is grounded.
  • the outer periphery of the insulator target will be covered with the shield.
  • a portion of the insulator target in the vicinity of the shield is not sputtered, and a film is deposited on the portion, which may cause generation of particles.
  • the present invention provides an advantageous technique for reducing electrode sputtering in a sputtering apparatus for forming an insulating film.
  • One aspect of the present invention relates to a sputtering apparatus for forming an insulating film on a substrate, and the sputtering apparatus is disposed in the vacuum container, an electrode disposed in the vacuum container, to which an insulator target is attached, and the vacuum container.
  • a substrate holder that holds the substrate, a high-frequency power source that supplies a high-frequency voltage to the electrode, and a low-pass filter that connects the electrode and the ground.
  • the figure which shows the equivalent circuit of the sputtering device shown by FIG. The figure which shows the average electric potential in the path
  • FIG. 1 shows the configuration of a sputtering apparatus 1 according to an embodiment of the present invention.
  • the sputtering apparatus 1 is shown in an XYZ coordinate system in which the horizontal plane is the XY plane.
  • the sputtering apparatus 1 is configured to form an insulating film on the substrate 40.
  • the insulating film may be, for example, an oxide film such as a MgO film, a SiO 2 film, or an Al 2 O 3 film, or a nitride film such as a SiN film or an AlN film, but is not limited thereto.
  • the sputtering apparatus 1 includes a vacuum vessel 10, an electrode 20 (backing plate) that is disposed in the vacuum vessel 10 and to which the insulator target 30 is attached, a substrate holder 50 that holds the substrate 40 in the vacuum vessel 10, A high frequency power supply 60 for supplying a high frequency voltage to the electrode 20 is provided.
  • the frequency of the high frequency voltage supplied to the electrode 20 by the high frequency power supply 60 can be, for example, 2 MHz or more and 100 MHz or less.
  • the sputtering apparatus 1 includes a low-pass filter 70 that connects the electrode 20 and the ground.
  • the low-pass filter 70 may include an inductor connected in series between the electrode 20 and ground (earth).
  • the insulator target 30 can be fixed to the electrode 20 by the target holding unit 120.
  • the insulator target 30 can be attached to the electrode 20 such that a part 22 of the electrode 20 is exposed to the internal space of the vacuum vessel 10.
  • the part 22 of the electrode 20 can be, for example, a ring-shaped region.
  • the electrode 20 can be configured such that the entire surface of the insulator target 30 on the electrode 20 side contacts the electrode 20.
  • the electrode 20 is supported by the vacuum vessel 10 via the insulator 100 and is insulated from the vacuum vessel 10.
  • the vacuum vessel 10 can be connected to the ground.
  • the sputtering apparatus 1 includes a gas supply unit 110 that supplies gas (for example, Ar, Kr, or Xe gas) into the vacuum vessel 10 through a gas supply hole 112 provided in the vacuum vessel 10.
  • the gas supply hole 112 may be disposed at a height between the lower surface 12 of the upper wall 11 of the vacuum vessel 10 and the lower surface of the electrode 20, for example.
  • the gas supply hole 112 may be disposed at a height between the lower surface 12 of the upper wall 11 of the vacuum vessel 10 and the upper surface 14 of the lower wall 13 of the vacuum vessel 10.
  • the gas supply hole 112 may be disposed at a height between the lower surface of the electrode 20 and the upper surface 14 of the lower wall 13 of the vacuum vessel 10.
  • the sputtering apparatus 1 includes an exhaust mechanism that exhausts the internal space of the vacuum vessel 10.
  • the sputtering apparatus 1 can include an impedance matching circuit 80 disposed in an electrical path between the high frequency power supply 60 and the electrode 20.
  • the sputtering apparatus 1 can include a blocking capacitor 90 disposed in an electrical path between the impedance matching circuit 80 and the electrode 20.
  • the impedance matching circuit 80 is a circuit for matching the impedance on the high frequency power supply 60 side and the impedance on the electrode 20 side (load side). For example, when the plasma is ignited, the impedance matching circuit 80 is adjusted so as to satisfy the impedance condition therefor, and when the plasma is maintained and an insulating film is formed on the substrate 40, the impedance matching circuit 80 is adapted so as to satisfy the impedance condition therefor. Adjusted to Although the blocking capacitor 90 is not necessarily required, the blocking capacitor 90 blocks a direct current component between the high frequency power supply 60 and the electrode 20.
  • the sputtering apparatus 1 may further include a magnet 130 for magnetron discharge above the electrode 20.
  • Plasma P is generated in the internal space of the vacuum vessel 10.
  • the substrate holder 50 may be connected to the ground directly or via an impedance, may be floated, may be supplied with a high-frequency voltage, may be supplied with a DC voltage, or may be supplied with a high-frequency voltage. And a DC voltage may be supplied.
  • FIG. 2 shows an equivalent circuit of the sputtering apparatus 1.
  • a dotted line indicates a path through which electrons in the plasma P formed in the internal space of the vacuum vessel 10 enter the electrode 20.
  • the impedance matching circuit 80 can include, for example, variable capacitors 81 and 82 and an inductor 83.
  • Variable capacitor 82 and inductor 83 are connected in series between high frequency power supply 60 and blocking capacitor 90 (or electrode 20), and variable capacitor 81 connects a connection node between high frequency power supply 60 and variable capacitor 82 and the ground. Are arranged to be.
  • FIG. 3 shows the average potential in the path from the electrode 20 through the plasma P to the vacuum vessel 10 (ground). Since the electrode 20 is connected to the ground via the low-pass filter 70, the average potential is maintained at 0V. Therefore, the potential difference between the electrode 20 and the plasma P is kept small. Therefore, sputtering of the electrode 20 is reduced. Therefore, the possibility that the material of the electrode 20 is taken into the film formed on the substrate 40 is reduced. A negative self-bias voltage appears on the surface of the insulator target 30. Thus, positive ions in the plasma P collide with the surface of the insulator target 30 and sputtering occurs. An insulating film is formed on the substrate 40 by the insulator released from the surface of the insulator target 30 by sputtering.
  • the impedance of the low-pass filter 70 between the electrode 20 and the ground can have, for example, a resistance component of 100 ⁇ or less and a reactance component of 1 ⁇ or more.
  • the resistance component By setting the resistance component to 100 ⁇ or less, the average potential (self-bias voltage) of the electrode 20 can be sufficiently brought close to the potential of the ground (0 V). If the resistance component is large, electrons entering the electrode 20 are difficult to flow to the ground via the low-pass filter 70, so that the average potential of the electrode 20 cannot be sufficiently close to the ground potential. Can be sputtered.
  • the reactance component inductance component
  • a dischargeable high-frequency voltage is not applied to the electrode 20, and plasma is hardly generated.
  • FIG. 4 shows an equivalent circuit of the sputtering apparatus of the comparative example.
  • the sputtering apparatus of the comparative example has a configuration in which the low-pass filter 70 is removed from the above-described sputtering apparatus 1.
  • FIG. 5 shows an average potential in a path from the electrode 20 to the vacuum vessel 10 (ground) via the plasma P in the comparative example.
  • the electrode 20 since the electrode 20 is in a floating state with respect to the DC component, a negative self-bias voltage appears on the electrode 20. Thereby, as shown in FIG. 5, a large potential difference is generated between the electrode 20 and the plasma P. Due to this potential difference, positive ions in the plasma P collide with the surface of the electrode 20 to cause sputtering.
  • the material released from the electrode 20 by sputtering can be taken into the insulating film formed on the substrate 40.
  • the impedance of the low-pass filter 70 between the electrode 20 and the ground preferably has a resistance component of 100 ⁇ or less and a reactance component (inductance component) of 1 ⁇ or more.
  • an inductor of 1.0 ⁇ H (reactance at a frequency of 13.56 MHz of the high frequency voltage generated by the high frequency power supply 60 is 85 ⁇ ) is connected between the electrode 20 and the ground, and the impedance between the electrode 20 and the ground.
  • Z 0.1 + j85 ⁇ .
  • An MgO target was used as the insulator target 30, and a silicon substrate was used as the substrate 40.
  • the electrode 20 was made of Cu.
  • the internal space of the vacuum vessel 10 was exhausted to 10-5 Pa or less by an exhaust mechanism.
  • the magnet 130 was rotated, and argon gas was supplied into the vacuum vessel 10 by the gas supply unit 110, and the pressure in the vacuum vessel 10 was set to 0.3 Pa.
  • high frequency power was output from the high frequency power supply 60 at 13.56 MHz and 400 W. Thereby, plasma P was generated in the vacuum vessel 10.
  • the impedance matching circuit 80 was adjusted so that the high frequency power was efficiently supplied to the plasma P.
  • the surface of the insulator target 30 was charged to a negative self-bias voltage, sputtered by argon ions, and an insulating film was formed on the substrate 40 by the insulator released from the insulator target 30.
  • FIG. 6 shows the result of comparison of the amount of Cu atoms with respect to Mg atoms when an MgO film is formed on the substrate 40 as an insulating film.
  • “No low-pass filter” indicates Cu / Mg when an insulating film is formed by a comparative example that does not have the low-pass filter 70.
  • “With low-pass filter” indicates Cu / Mg when an insulating film is formed by the sputtering apparatus 1 of the embodiment of the present invention having the low-pass filter 70. It was confirmed that the insulating film formed using the sputtering apparatus 1 according to the embodiment of the present invention has less Cu (electrode-derived impurities) than the insulating film formed using the comparative example. This shows that sputtering of the electrode 20 is less in the sputtering apparatus 1 of the embodiment of the present invention than in the comparative example.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Le dispositif de pulvérisation cathodique selon la présente invention est conçu pour former un film isolant sur un substrat et comporte : un récipient sous vide; une électrode qui est disposée dans le récipient sous vide et sur laquelle une cible isolante est fixée; un porte-substrat destiné à maintenir le substrat dans le récipient sous vide; une source d'alimentation haute fréquence destinée à alimenter l'électrode en tension haute fréquence; et un filtre passe-bas destiné à connecter l'électrode et une masse.
PCT/JP2017/010522 2017-03-15 2017-03-15 Dispositif de pulvérisation cathodique Ceased WO2018167895A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2017/010522 WO2018167895A1 (fr) 2017-03-15 2017-03-15 Dispositif de pulvérisation cathodique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2017/010522 WO2018167895A1 (fr) 2017-03-15 2017-03-15 Dispositif de pulvérisation cathodique

Publications (1)

Publication Number Publication Date
WO2018167895A1 true WO2018167895A1 (fr) 2018-09-20

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03197304A (ja) * 1989-12-26 1991-08-28 Sumitomo Electric Ind Ltd 酸化物超電導薄膜の作製方法
JP2002249874A (ja) * 2001-02-23 2002-09-06 National Institute Of Advanced Industrial & Technology 高周波スパッタリング装置及び高周波スパッタリング方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03197304A (ja) * 1989-12-26 1991-08-28 Sumitomo Electric Ind Ltd 酸化物超電導薄膜の作製方法
JP2002249874A (ja) * 2001-02-23 2002-09-06 National Institute Of Advanced Industrial & Technology 高周波スパッタリング装置及び高周波スパッタリング方法

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