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WO2018163861A1 - CIBLE DE PULVÉRISATION EN ALLIAGE Cu-Ni ET SON PROCÉDÉ DE PRODUCTION - Google Patents

CIBLE DE PULVÉRISATION EN ALLIAGE Cu-Ni ET SON PROCÉDÉ DE PRODUCTION Download PDF

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Publication number
WO2018163861A1
WO2018163861A1 PCT/JP2018/006685 JP2018006685W WO2018163861A1 WO 2018163861 A1 WO2018163861 A1 WO 2018163861A1 JP 2018006685 W JP2018006685 W JP 2018006685W WO 2018163861 A1 WO2018163861 A1 WO 2018163861A1
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Prior art keywords
alloy
less
mass
sputtering target
ingot
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Ceased
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PCT/JP2018/006685
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English (en)
Japanese (ja)
Inventor
小見山　昌三
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Priority claimed from JP2017241103A external-priority patent/JP2018145518A/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to CN201880007717.5A priority Critical patent/CN110199051A/zh
Publication of WO2018163861A1 publication Critical patent/WO2018163861A1/fr
Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/03—Alloys based on nickel or cobalt based on nickel
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/10—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon

Definitions

  • the present invention relates to a Cu—Ni alloy sputtering target and a manufacturing method thereof.
  • This application claims priority based on Japanese Patent Application No. 2017-042162 filed in Japan on March 6, 2017 and Japanese Patent Application No. 2017-241103 filed in Japan on December 15, 2017. Is incorporated herein by reference.
  • Al is widely used as a flat panel display such as a liquid crystal or an organic EL panel, or as a wiring film for a touch panel or the like.
  • miniaturization (narrowing) and thinning of the wiring film have been attempted, and a wiring film having a lower specific resistance than before has been demanded.
  • a wiring film using Cu or Cu alloy, which is a material having a specific resistance lower than that of Al, is provided.
  • Patent Document 1 discloses a Cu wiring protection made of a Cu alloy containing 20 wt% to 65 wt% of Ni, 0.2 wt% to 5.0 wt% of Al and / or Ti, and the remaining 90 mass% or more of Cu. A film and a Cu alloy sputtering target for forming this Cu wiring protective film are disclosed.
  • the glass substrate on which the wiring film is formed has been increased in size, and accordingly, the sputtering target itself for forming the protective film tends to be increased in size.
  • the conventional Cu alloy sputtering target as described in Patent Document 1 is enlarged, micro arc discharge (abnormal discharge) and splash may occur depending on sputtering conditions, and film formation cannot be performed satisfactorily. was there. That is, when a large sputtering target is used, a large amount of power is applied.
  • the present invention has been made in view of the above-described circumstances, and can form a Cu alloy film excellent in weather resistance, and can suppress the occurrence of micro arc discharge during film formation, and a Cu alloy sputtering target. It aims at providing the manufacturing method.
  • the Cu—Ni alloy sputtering target of the present invention contains Ni in the range of 16 mass% to 55 mass%, the hydrogen content is less than 5 mass ppm, and the oxygen content Is 500 mass ppm or less, with the balance being composed of Cu and inevitable impurities.
  • the main component is two elements of Cu and Ni
  • the variation in composition is smaller than that of a three-element or four-element alloy as in Patent Document 1.
  • the Ni content is in the range of 16 mass% or more and 55 mass% or less, the weather resistance of the formed Cu—Ni alloy film becomes high.
  • the hydrogen content is less than 5 ppm by mass and the oxygen content is limited to 500 ppm by mass or less, it is possible to suppress the occurrence of micro arc discharge during the sputtering film formation, and the sputter film formation. It becomes possible to carry out stably.
  • the number of voids having a maximum diameter of 2 ⁇ m or more is preferably 1 or less per 1 mm 2 region in the sputtering surface. In this case, since the amount of large voids having a maximum diameter of 2 ⁇ m or more is small, it is possible to more reliably suppress the occurrence of micro arc discharge during sputtering film formation.
  • the number of voids in this specification is a value measured by the measurement method described later.
  • the carbon content is preferably 500 mass ppm or less.
  • Large Cu alloy sputtering targets are usually manufactured through casting and hot rolling processes, but when cracks occur during hot rolling, micro arc discharge occurs at the cracks, so they are used as sputtering targets. There is a risk that it will not be possible.
  • hot rollability can be improved, cracking during hot rolling can be suppressed, and micro arc discharge can be suppressed.
  • a method for producing a Cu—Ni alloy sputtering target includes: Electrolytic Ni is heated and melted, held for 10 minutes or more at a temperature higher than the melting temperature of Ni for 10 minutes or more, and then cooled and solidified to obtain a Ni ingot, A melt casting step of melt-casting oxygen-free copper and the Ni ingot to obtain a Cu-Ni alloy ingot; Hot rolling is performed on a Cu—Ni alloy ingot obtained in the melt casting process to obtain a Cu—Ni alloy rolled sheet having an average crystal grain size of 100 ⁇ m or less and a Vickers hardness of 60 Hv to 120 Hv. Process, The surface of the Cu—Ni alloy rolled plate that is to be a sputter surface is ground and polished, and the surface roughness of the sputter surface is adjusted to a maximum height Rz of 5 ⁇ m or less.
  • a Cu—Ni alloy sputtering target capable of forming a Cu—Ni alloy film having excellent weather resistance and suppressing the occurrence of micro arc discharge during the film formation.
  • the Cu—Ni alloy sputtering target of this embodiment is used, for example, when forming a protective film laminated on a wiring film such as a flat panel display or a touch panel, or a Cu wiring film made of Cu or Cu alloy. It is what is done.
  • the shape and size of the Cu—Ni alloy sputtering target of the present embodiment are not limited, and may be a disk shape or a rectangular plate shape, or a cylindrical shape.
  • a backing plate made of copper, stainless steel, or titanium may be fixed to one surface of the target via solder such as indium, indium-tin alloy, or tin.
  • a cylindrical backing tube made of the same material may be fixed to the inner peripheral surface of the target via the same solder material.
  • the effect of the present invention is remarkable when the sputtering target is a large-sized sputtering target having an area of 100000 mm 2 or more, and the effect is remarkable when the sputtering target is flat.
  • the sputtering surface refers to a region of the surface of the sputtering target that is used for sputtering by being irradiated with plasma.
  • the Cu—Ni alloy sputtering target of the present embodiment contains Ni in the range of 16 mass% to 55 mass%, the hydrogen content is less than 5 mass ppm, and the oxygen content is 500 mass ppm or less.
  • the balance has a composition composed of Cu and inevitable impurities.
  • the number of voids having a maximum diameter of 2 ⁇ m or more is set to 1 or less per 1 mm 2 region in the sputtering surface. A specific method for measuring the number of voids will be described later. Furthermore, in the Cu—Ni alloy sputtering target of this embodiment, the carbon content of the inevitable impurities is set to 500 mass ppm or less.
  • Ni is an element having an effect of improving the weather resistance of Cu.
  • discoloration of the formed Cu—Ni alloy film can be suppressed.
  • the Ni content is set in the range of 16 mass% to 55 mass%.
  • the Ni content is preferably in the range of 20% by mass to 50% by mass, and more preferably in the range of 25% by mass to 45% by mass. .
  • the hydrogen content of the Cu—Ni alloy sputtering target correlates with the number of voids, and that the number of voids tends to decrease when the hydrogen content is small.
  • the hydrogen content is set to less than 5 ppm by mass.
  • the hydrogen content is preferably less than 4 ppm by mass, and more preferably less than 3 ppm by mass.
  • the lower limit of the hydrogen content is usually 0.1 mass ppm or more. Even if the hydrogen content is less than 0.1 mass ppm, the effect of reducing the number of voids is not improved. On the other hand, the work for reducing the hydrogen content becomes complicated and the production cost may increase.
  • Oxygen content 500 mass ppm or less
  • oxygen content 500 mass ppm or less. It is assumed that oxygen is present as the oxide that remains when a part of the refractory of the melting furnace is caught in the ingot during melting and casting of the Cu and Ni oxides and the target constituting the Cu—Ni alloy sputtering target. Is done. Since these oxides easily emit secondary electrons, if the content of oxide in the Cu—Ni alloy sputtering target is excessive, the amount of secondary electrons emitted increases during sputtering film formation. The present inventors have found that the number of occurrences of micro arc discharge may increase. For this reason, in this embodiment, the oxygen content is set to 500 mass ppm or less.
  • the oxygen content is preferably 300 ppm by mass or less, and more preferably 50 ppm by mass or less.
  • the lower limit of the oxygen content is usually 0.1 mass ppm or more. Even if the oxygen content is less than 0.1 mass ppm, the effect of reducing the emission amount of secondary electrons is not improved. On the other hand, the work for reducing the oxygen content becomes complicated and the production cost may increase. is there.
  • Carbon is an element that may cause cracking in the manufacturing process of the Cu—Ni alloy sputtering target of the present embodiment. Cracking proceeds from the outer periphery of the rolled Cu—Ni alloy sheet during rolling of the Cu—Ni alloy. If it is a fine crack, it can be removed by machining or the like, but if the carbon content exceeds 500 ppm, the crack tends to increase, and depending on the machining, it may be difficult to completely remove the crack. This has been found by the inventors' research. If cracks exist in the Cu—Ni alloy sputtering target, the number of occurrences of micro arc discharge starting from the cracks may increase during sputtering film formation. That is, it has been found by the present inventors that the low carbon content means that the amount of cracks that causes micro arc discharge during sputtering film formation is small. For this reason, in this embodiment, the carbon content is set to 500 mass ppm or less.
  • the carbon content is preferably 300 mass ppm or less, and more preferably 50 mass ppm or less. .
  • the lower limit of the carbon content is usually 3 ppm by mass or more. Even if the carbon content is less than 3 ppm by mass, the effect of reducing fine cracks is not improved. On the other hand, the work for reducing the carbon content becomes complicated and the production cost may increase.
  • the number of voids having a maximum diameter of 2 ⁇ m or more is limited to one or less per 1 mm 2 region in the sputtering surface. A specific method for measuring the number of voids will be described later.
  • the Cu—Ni alloy sputtering target of this embodiment is manufactured through processes such as a melt casting process, a hot rolling process, (leveler processing process / cold rolling process, heat treatment process), and a machining process. Below, each process is demonstrated.
  • melt casting process Cu and Ni are melt cast to obtain a Cu—Ni alloy ingot.
  • the melting raw material is weighed so that the above-described target composition is obtained.
  • a melting raw material it is preferable to use Cu having a purity of 99.99% by mass or more and Ni having a purity of 99.9% by mass or more.
  • oxygen-free copper having an oxygen concentration of 10 mass ppm or less and a purity of 99.99 mass% or more is preferably used.
  • Ni melting material As a Ni melting material, it is preferable to use a material obtained by subjecting electrolytic Ni purified by an electrolytic method to a hydrogen reduction treatment.
  • the hydrogen reduction treatment is usually performed because electrolytic Ni contains more than 10 ppm by mass of hydrogen, so when used as a raw material for dissolution, hydrogen in electrolytic Ni remains in the Cu—Ni alloy ingot. This is because voids may be generated. If voids are generated in the Cu—Ni alloy ingot, the voids may remain on the target and cause micro arc discharge during sputtering film formation.
  • Electrolytic Ni contains excess hydrogen above its solubility. Therefore, when Cu and electrolytic Ni are dissolved to form a molten Cu—Ni alloy, the hydrogen in electrolytic Ni is the molten Cu—Ni alloy (liquid phase). Blend into. On the other hand, since hydrogen has a low solubility in the solid phase of the Cu—Ni alloy, hydrogen gas bubbles are generated at the boundary between the liquid phase and the solid phase when the melt of the Cu—Ni alloy solidifies. The solidification of the molten metal and the generation of bubbles proceed simultaneously, and the bubbles that have not been discharged to the outside of the molten metal are left as voids in the Cu—Ni alloy ingot.
  • electrolytic Ni As the hydrogen reduction treatment of electrolytic Ni, electrolytic Ni is heated and melted, held at a temperature 10 to 50 ° C. higher than the melting temperature of Ni for 2 to 30 minutes, then cooled and solidified to form a Ni casting.
  • a method of obtaining a lump can be used. More preferably, a Ni ingot may be obtained by holding at a temperature 15 ° C. to 35 ° C. higher than the melting temperature of Ni for 10 minutes to 20 minutes and then cooling to solidify.
  • the hydrogen reduction treatment of electrolytic Ni it is preferable to use an induction melting furnace as the heating device.
  • the hydrogen reduction treatment is preferably performed in a vacuum atmosphere or an inert gas atmosphere.
  • the Ni ingot obtained by this hydrogen reduction treatment preferably has a hydrogen content of 10 mass ppm or less, particularly 5 mass ppm or less. From the viewpoint of manufacturing cost, the hydrogen content of the Ni ingot may be 0.1 mass ppm or more.
  • an induction melting furnace When melting and casting the weighed Cu and Ni, it is preferable to use an induction melting furnace in order to sufficiently mix the melting raw materials and make the composition of the molten metal uniform. By preventing oxidation of Cu and Ni, which are alloy constituents, at the time of melting, generation of oxide is suppressed. In order to prevent oxidation during melting, it is preferable to dissolve in a vacuum atmosphere or an inert gas atmosphere. When melting in an air atmosphere in consideration of productivity, use a carbon crucible to hold the melting raw material, or cover the molten metal surface with carbon particles and carbon powder to make the molten metal into a reducing atmosphere. A method of keeping may be adopted.
  • the Cu—Ni alloy ingot obtained in the melt casting process is cut into a predetermined length and then hot rolled.
  • the conditions for hot rolling are preferably a rolling reduction per pass of 10% to 20% and a hot rolling temperature of 550 ° C to 1000 ° C. More preferably, the rolling reduction per pass is 11% to 17%, and the hot rolling temperature is 800 ° C to 1000 ° C.
  • the rolling reduction is a value calculated from the following equation.
  • Reduction ratio (%) ⁇ (Cu—Ni alloy thickness before hot rolling pass ⁇ Cu—Ni alloy thickness after hot rolling pass) / Cu—Ni alloy thickness before hot rolling pass ⁇ ⁇ 100
  • the overall rolling reduction in the hot rolling process is preferably 50% or more and 90% or less, and more preferably, the overall rolling reduction in the hot rolling process is 60% or more and 80% or less.
  • a Cu—Ni alloy rolled sheet having an average crystal grain size of 100 ⁇ m or less and a Vickers hardness of 60 Hv to 120 Hv can be obtained. More preferably, the average crystal grain size may be 5 ⁇ m or more and 50 ⁇ m or less, and the Vickers hardness may be 80 Hv or more and 110 Hv or less.
  • Leveler processing process / cold rolling process, heat treatment process The Cu—Ni alloy rolled sheet obtained in the hot rolling process described above may be subjected to a leveler process or a cold rolling process in order to improve the flatness of the rolled sheet.
  • heat treatment is performed at a temperature of 550 ° C. to 850 ° C. for 1 to 2 hours. It is preferable to cool in the atmosphere. More preferably, the heat treatment may be performed under the condition of holding at a temperature of 650 ° C. or higher and 850 ° C. or lower for 1 to 2 hours, and then allowed to cool in the air.
  • the machining step grinding and polishing are performed on the surface to be the sputtered surface of the Cu—Ni alloy rolled plate obtained as described above. It is preferable to adjust the surface roughness of the sputter surface so that the maximum height Rz is 5 ⁇ m or less. More preferably, the surface roughness of the sputter surface may be adjusted to be 0.5 ⁇ m or more and 3 ⁇ m or less at the maximum height Rz.
  • the Cu—Ni alloy sputtering target of the present embodiment is manufactured through the processes as described above.
  • This Cu—Ni alloy sputtering target is soldered or brazed to a Cu backing plate as necessary, and is attached to a sputtering apparatus, and a Cu—Ni alloy film is formed on the opposing substrate by sputtering. .
  • the sputtered Cu—Ni alloy film has the same composition as the above-described Cu—Ni alloy sputtering target.
  • the components are two elements of Cu and Ni, the variation in composition is reduced. Since the Ni content is in the range of 16 mass% or more and 55 mass% or less, the weather resistance of the formed Cu—Ni alloy film becomes high.
  • the hydrogen content is less than 5 ppm by mass
  • the oxygen content is limited to 500 ppm by mass or less
  • the amount of voids and oxides mixed is small. Generation of micro arc discharge can be suppressed, and sputtering film formation can be performed stably.
  • the number of voids having a maximum diameter of 2 ⁇ m or more is 1 or less per 1 mm 2 region in the sputtering surface. The occurrence of arc discharge can be more reliably suppressed.
  • the hot rolling property can be improved, and during hot rolling, The occurrence of cracks can be suppressed.
  • this invention is not limited to this, It can change suitably in the range which does not deviate from the technical idea of the invention.
  • a large sputtering target having a flat plate shape and an area of the sputtering surface of 100,000 mm 2 or more has been described.
  • the shape of the Cu—Ni alloy sputtering target is not particularly limited, and is a disk shape. Alternatively, it may have a rectangular flat plate shape or a cylindrical shape.
  • the area of the sputter surface is not limited to the above range. In either case, the effects of the present invention can be obtained.
  • Electrolytic Ni production of hydrogen reduced Ni ingot
  • Electrolytic Ni purity: 99.99% by mass or more
  • the hydrogen content in the electrolytic Ni was in the range of 11 to 15 ppm by mass.
  • Electrolytic Ni was put into an alumina crucible. Next, electrolytic Ni is heated and melted in a vacuum atmosphere using a high-frequency induction heating furnace, held at a temperature 10 to 50 ° C. higher than the melting temperature of Ni for 2 to 15 minutes, and then cooled and solidified. Thus, a hydrogen reduced Ni ingot was obtained.
  • Table 1 shows the melt retention time of the hydrogen reduction treatment and the hydrogen content of the obtained hydrogen reduced Ni ingot.
  • Comparative Example 1 the hydrogen reduction treatment of electrolytic Ni was not performed.
  • the hydrogen content of the electrolytic Ni and hydrogen reduced Ni ingots was analyzed by an inert gas melting-thermal conductivity method (JISZ2614).
  • Example 7 of the present invention when the target material was cut out, the cracked portion of the rolled Cu—Ni alloy plate was removed.
  • the number of voids was measured by the following method. Note that the number of voids in this specification is a value measured by the following method.
  • the sputter surface of the evaluation target was equally divided into four equal parts, and samples for tissue observation were cut out from the respective portions.
  • the sputter surfaces of these four samples were polished using # 180 to # 2400 polishing paper in order from coarse to fine, and then polished with an abrasive having an average particle size of 1 ⁇ m. According to this polishing method, the surface roughness is approximately Ra: less than 0.1 ⁇ m.
  • each region of 0.5 mm ⁇ 0.5 mm was randomly selected from the four sputtered surfaces of the polished samples, and each region was darkened at a magnification of 100 times with an optical microscope. It was observed as a field image. Since this is a dark field image, if there is a void (dent) of a certain size or more on the sputter surface, that portion is detected as a point that shines white. In each region, the number of voids having a maximum length of 2 ⁇ m or more was counted. Evaluation was made with “OK” when the number of voids detected within 1 mm 2 totaling 4 regions was 1 or 0, and “NG” when 2 or more. The evaluation results are shown in Table 2.
  • a target for evaluation was attached to the sputtering apparatus, pre-sputtering was performed for 30 minutes from the start of use under the conditions of ultimate vacuum: 5 ⁇ 10 ⁇ 4 Pa, gas pressure: argon 0.3 Pa, sputtering power: direct current 1000 W, then micro sputtering
  • the number of arc discharges was examined.
  • the micro arc discharge was detected by adding a micro arc monitor manufactured by Landmark Technology Co., Ltd. to the sputtering power source and detecting a decrease in the discharge voltage.
  • Table 2 shows the results of counting the number of micro arc discharges.
  • a non-alkali glass substrate of 50 mm ⁇ 50 mm ⁇ 0.7 mm was placed facing the target for evaluation so that the distance between the substrates was 60 mm, the ultimate vacuum: 5 ⁇ 10 ⁇ 4 Pa, the gas pressure: argon 0.3 Pa, Sputtering power: Sputtering was performed under the condition of 600 W DC, and a Cu—Ni alloy film having a thickness of 150 nm was formed on the substrate.
  • the formed Cu—Ni alloy film was subjected to a constant temperature and humidity test for 250 hours under a constant temperature and humidity condition of 70 ° C. and 90% relative humidity, and then the surface of the Cu—Ni alloy film was visually observed. Then, the case where the color change was recognized was evaluated as “NG”, and the case where the color change was not confirmed was evaluated as “OK”.
  • the evaluation results are shown in Table 2.
  • Comparative Example 1 In Comparative Example 1 in which the hydrogen content was 5 mass ppm or more, the number of voids increased and the number of micro arc discharges increased. In Comparative Example 2 in which the oxygen content exceeds 500 ppm by mass, the number of micro arc discharges is increased, and the formed Cu—Ni alloy film is discolored after the constant temperature and humidity test, resulting in insufficient weather resistance. It was. In Comparative Example 3 in which the Ni content was less than 16% by mass, the formed Cu—Ni alloy film was discolored after the constant temperature and humidity test, and the weather resistance was insufficient. In Comparative Example 4 where the Ni content exceeds 55 mass%, sputtering could not be performed. It is presumed that the magnetism has become stronger.
  • the number of voids is small, the number of micro arc discharges is suppressed, and stable sputtering film formation I was able to. Further, the formed Cu—Ni alloy film was excellent in weather resistance.
  • a Cu—Ni alloy sputtering target capable of forming a Cu—Ni alloy film having excellent weather resistance and suppressing the occurrence of micro arc discharge during the film formation. It was confirmed that it was possible.
  • the Cu—Ni alloy sputtering target of the present invention can be used industrially because it can form a Cu—Ni alloy film having excellent weather resistance and suppress the occurrence of micro arc discharge during the film formation.

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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
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Abstract

Cette cible de pulvérisation en alliage Cu-Ni a une composition telle que : Ni est contenu dans la plage de 16 % en masse à 55 % en masse; la teneur en hydrogène est inférieure à 5 ppm en masse, la teneur en oxygène est de 500 ppm en masse ou moins, et la teneur en carbone est de 500 ppm en masse ou moins; et le reste est du Cu et des impuretés inévitables. Le nombre de vides ayant un diamètre maximal supérieur ou égal à 2 µm est inférieur ou égal à 1 par zone de 1 mm2 dans la surface de pulvérisation.
PCT/JP2018/006685 2017-03-06 2018-02-23 CIBLE DE PULVÉRISATION EN ALLIAGE Cu-Ni ET SON PROCÉDÉ DE PRODUCTION Ceased WO2018163861A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201880007717.5A CN110199051A (zh) 2017-03-06 2018-02-23 Cu-Ni合金溅射靶及其制造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017-042162 2017-03-06
JP2017042162 2017-03-06
JP2017241103A JP2018145518A (ja) 2017-03-06 2017-12-15 Ｃｕ−Ｎｉ合金スパッタリングターゲット
JP2017-241103 2017-12-15

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020066957A1 (fr) * 2018-09-26 2020-04-02 Ｊｘ金属株式会社 Cible de pulvérisation et procédé de fabrication de celle-ci
CN114381631A (zh) * 2022-01-12 2022-04-22 深圳市众诚达应用材料科技有限公司 一种镀膜用靶材及其制备方法
CN117305783A (zh) * 2023-09-14 2023-12-29 基迈克材料科技（苏州）有限公司 一种触控器件的铜合金触控靶材的制备方法

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