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WO2018145955A3 - Procédé de mise en contact électrique et module de puissance - Google Patents

Procédé de mise en contact électrique et module de puissance Download PDF

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Publication number
WO2018145955A3
WO2018145955A3 PCT/EP2018/052292 EP2018052292W WO2018145955A3 WO 2018145955 A3 WO2018145955 A3 WO 2018145955A3 EP 2018052292 W EP2018052292 W EP 2018052292W WO 2018145955 A3 WO2018145955 A3 WO 2018145955A3
Authority
WO
WIPO (PCT)
Prior art keywords
contact
component
contact layer
power module
electrical contacting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2018/052292
Other languages
German (de)
English (en)
Other versions
WO2018145955A2 (fr
Inventor
Hubert Baueregger
Albrecht Donat
Michael Kaspar
Kai Kriegel
Gerhard Mitic
Markus Schwarz
Herbert Schwarzbauer
Stefan Stegmeier
Karl Weidner
Jörg ZAPF
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of WO2018145955A2 publication Critical patent/WO2018145955A2/fr
Publication of WO2018145955A3 publication Critical patent/WO2018145955A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32235—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a via metallisation of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83909—Post-treatment of the layer connector or bonding area
    • H01L2224/8392—Applying permanent coating, e.g. protective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cell Electrode Carriers And Collectors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

L'invention concerne un procédé de mise en contact électrique d'un composant avec au moins un contact électrique, selon lequel une couche de contact à pores ouverts est formée au niveau dudit au moins un contact par un procédé additif.
PCT/EP2018/052292 2017-02-08 2018-01-30 Procédé de mise en contact électrique et module de puissance Ceased WO2018145955A2 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE102017201979.4 2017-02-08
DE102017201979 2017-02-08
DE102017001248.2 2017-02-09
DE102017001248 2017-02-09
DE102017211619.6A DE102017211619A1 (de) 2017-02-08 2017-07-07 Verfahren zur elektrischen Kontaktierung und Leistungsmodul
DE102017211619.6 2017-07-07

Publications (2)

Publication Number Publication Date
WO2018145955A2 WO2018145955A2 (fr) 2018-08-16
WO2018145955A3 true WO2018145955A3 (fr) 2018-11-29

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PCT/EP2018/052292 Ceased WO2018145955A2 (fr) 2017-02-08 2018-01-30 Procédé de mise en contact électrique et module de puissance

Country Status (2)

Country Link
DE (1) DE102017211619A1 (fr)
WO (1) WO2018145955A2 (fr)

Citations (10)

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EP1198001A2 (fr) * 1994-11-15 2002-04-17 Formfactor, Inc. Methode d'essaiage et d'assemblage des dispositifs par des structures de contact élastiques
DE102004048529A1 (de) * 2003-10-23 2005-05-25 Luk Lamellen Und Kupplungsbau Beteiligungs Kg Elektronisches Gerät
WO2006068643A1 (fr) * 2004-12-20 2006-06-29 Semiconductor Components Industries, L.L.C. Structure de boitier de semi-conducteur possedant des caracteristiques de dissipation de la chaleur ameliorees
US20060279932A1 (en) * 2005-06-14 2006-12-14 International Business Machines Corporation Compliant thermal interface structure utilizing spring elements with fins
DE102009003294A1 (de) * 2009-05-20 2010-11-25 Robert Bosch Gmbh Steuergerät
US20100328896A1 (en) * 2009-06-30 2010-12-30 General Electric Company Article including thermal interface element and method of preparation
EP2270852A2 (fr) * 2009-06-30 2011-01-05 General Electric Company Élément d'interface thermique et article l'incluant
EP2775511A1 (fr) * 2011-10-31 2014-09-10 Hitachi, Ltd. Dispositif semi-conducteur et procédé de fabrication de ce dernier
US20160225730A1 (en) * 2013-10-09 2016-08-04 Waseda University Electrode connection structure and electrode connection method
WO2016193038A1 (fr) * 2015-06-01 2016-12-08 Siemens Aktiengesellschaft Procédé de connexion électrique d'un composant au moyen de la liaison galvanique d'une pièce de contact à pores ouverts, et ensemble composant correspondant

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Publication number Priority date Publication date Assignee Title
DE102004057497B4 (de) 2004-11-29 2012-01-12 Siemens Ag Wärmeaustauschvorrichtung und Verfahren zum Herstellen der Wärmeaustauschvorrichtung sowie Anordnung eines Bauelements und der Wärmeaustauschvorrichtung und Verfahren zum Herstellen der Anordnung
US8835299B2 (en) 2012-08-29 2014-09-16 Infineon Technologies Ag Pre-sintered semiconductor die structure
DE202013012008U1 (de) 2013-09-03 2014-12-16 Deutsches Zentrum für Luft- und Raumfahrt e.V. Kühlsystem für elektronische Baueinheiten
DE102014201306A1 (de) 2014-01-24 2015-07-30 Siemens Aktiengesellschaft Leistungselektronikmodul mit 3D-gefertigtem Kühler
EP2985788B1 (fr) 2014-08-14 2017-10-04 ABB Technology Oy Module semi-conducteur de puissance et procédé de refroidissement d'un module semi-conducteur de puissance

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1198001A2 (fr) * 1994-11-15 2002-04-17 Formfactor, Inc. Methode d'essaiage et d'assemblage des dispositifs par des structures de contact élastiques
DE102004048529A1 (de) * 2003-10-23 2005-05-25 Luk Lamellen Und Kupplungsbau Beteiligungs Kg Elektronisches Gerät
WO2006068643A1 (fr) * 2004-12-20 2006-06-29 Semiconductor Components Industries, L.L.C. Structure de boitier de semi-conducteur possedant des caracteristiques de dissipation de la chaleur ameliorees
US20060279932A1 (en) * 2005-06-14 2006-12-14 International Business Machines Corporation Compliant thermal interface structure utilizing spring elements with fins
DE102009003294A1 (de) * 2009-05-20 2010-11-25 Robert Bosch Gmbh Steuergerät
US20100328896A1 (en) * 2009-06-30 2010-12-30 General Electric Company Article including thermal interface element and method of preparation
EP2270852A2 (fr) * 2009-06-30 2011-01-05 General Electric Company Élément d'interface thermique et article l'incluant
EP2775511A1 (fr) * 2011-10-31 2014-09-10 Hitachi, Ltd. Dispositif semi-conducteur et procédé de fabrication de ce dernier
US20160225730A1 (en) * 2013-10-09 2016-08-04 Waseda University Electrode connection structure and electrode connection method
WO2016193038A1 (fr) * 2015-06-01 2016-12-08 Siemens Aktiengesellschaft Procédé de connexion électrique d'un composant au moyen de la liaison galvanique d'une pièce de contact à pores ouverts, et ensemble composant correspondant

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WO2018145955A2 (fr) 2018-08-16

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