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WO2018034234A1 - Pâte de fixation de puce et dispositif semi-conducteur - Google Patents

Pâte de fixation de puce et dispositif semi-conducteur Download PDF

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Publication number
WO2018034234A1
WO2018034234A1 PCT/JP2017/029106 JP2017029106W WO2018034234A1 WO 2018034234 A1 WO2018034234 A1 WO 2018034234A1 JP 2017029106 W JP2017029106 W JP 2017029106W WO 2018034234 A1 WO2018034234 A1 WO 2018034234A1
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WIPO (PCT)
Prior art keywords
die attach
attach paste
meth
mass
acrylic
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Ceased
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PCT/JP2017/029106
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English (en)
Japanese (ja)
Inventor
隆志 川名
敬一郎 齊藤
孝行 西
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Sumitomo Bakelite Co Ltd
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Sumitomo Bakelite Co Ltd
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Priority to CN201780050941.8A priority Critical patent/CN109643662B/zh
Priority to JP2017562078A priority patent/JP6319530B1/ja
Priority to KR1020197006098A priority patent/KR102040529B1/ko
Publication of WO2018034234A1 publication Critical patent/WO2018034234A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/44—Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08—Macromolecular additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J167/00—Adhesives based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J169/00—Adhesives based on polycarbonates; Adhesives based on derivatives of polycarbonates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C09J4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09J159/00 - C09J187/00
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature

Definitions

  • the die attach paste is heat treated to cure the resin component contained therein.
  • the die attach layer 10 is formed on the substrate 30.
  • heat treatment can be performed while pressurizing the die attach paste.
  • the temperature condition of this heat treatment can be appropriately set according to the paste composition and the like.
  • the maximum length of the straight line connecting two arbitrary points in the region where the silver particles exist is defined as the “major axis” of the silver particles.
  • the interval between the parallel lines drawn with the two parallel lines closest to each other and sandwiching the silver particles with respect to the surface having the smallest observation area of the silver particles is defined as “minor axis”. This operation is performed on 100 arbitrarily extracted silver particles, and the average value is calculated to obtain the aspect ratio.
  • the upper limit of the tap density of the silver particles is, for example, preferably 10.0 g / cm 3 or less, more preferably 8.0 g / cm 3 or less, and 6.0 g / cm 3 or less. Is more preferably 5.4 g / cm 3 or less. Thereby, it can suppress that the density of the silver particle in the hardened
  • the lower limit of the tap density of the silver particles is preferably, for example, 2.5 g / cm 3 or more, more preferably 3.0 g / cm 3 or more, and 3.2 g / cm 3 or more. More preferably it is. Thereby, silver particle can be highly filled and the heat dissipation of the hardened
  • the D 50 of the silver particles is determined by measuring the particle size distribution of the particles on a volume basis using, for example, a commercially available laser diffraction particle size distribution measuring apparatus (for example, SALD-7000, manufactured by Shimadzu Corporation). It can be determined by the particle size.
  • a commercially available laser diffraction particle size distribution measuring apparatus for example, SALD-7000, manufactured by Shimadzu Corporation. It can be determined by the particle size.
  • the die attach paste according to the second embodiment is largely cured and contracted by the curing of the monomer.
  • the die attach paste can agglomerate silver particles greatly and can exhibit high thermal conductivity.
  • Specific examples of such a monomer include an acrylic monomer, an epoxy monomer, and a maleimide monomer.
  • the acrylic monomer and the maleimide monomer can be polymerized by a radical polymerization initiator described later and can be cured and contracted.
  • the epoxy monomer reacts with the curing agent described later and can cure and shrink.
  • the monomer one or more of the above specific examples can be used in combination.
  • the acrylic monomer which concerns on 2nd Embodiment is a monomer provided with the (meth) acryl group in the structure.
  • the (meth) acryl group refers to an acryl group and a methacryl group (methacrylate group).
  • the acrylic monomer according to the second embodiment may be a monofunctional acrylic monomer having only one (meth) acryl group in its structure, or having two or more (meth) acryl groups in its structure.
  • a polyfunctional acrylic monomer may be used.
  • the acrylic group includes an acrylate group.
  • the monofunctional acrylic monomer examples include 2-phenoxyethyl methacrylate, ethyl methacrylate, n-butyl methacrylate, isobutyl methacrylate, tert-butyl methacrylate, isoamyl acrylate, 2-ethylhexyl methacrylate, isodecyl methacrylate, and n-lauryl acrylate.
  • polyfunctional acrylic monomer examples include ethylene glycol dimethacrylate, glycerin dimethacrylate, trimethylolpropane trimethacrylate, propoxylated bisphenol A diacrylate, polyethylene glycol di (meth) acrylate, hexane-1,6-diol bis ( 2-methyl acrylate), 4,4′-isopropylidene diphenol di (meth) acrylate, 1,3-butanediol di (meth) acrylate, 1,6-bis ((meth) acryloyloxy) -2,2, 3,3,4,4,5,5-octafluorohexane, 1,4-bis ((meth) acryloyloxy) butane, 1,6-bis ((meth) acryloyloxy) hexane, triethylene glycol di (meth) ) Acrylate, Neopentyling Recall di (meth) acrylate, neopentyl glycol di (meth)
  • the acrylic monomer a monofunctional acrylic monomer or a polyfunctional acrylic monomer may be used alone, or a monofunctional acrylic monomer and a polyfunctional acrylic monomer may be used in combination.
  • the acrylic monomer for example, it is preferable to use a monofunctional acrylic monomer and a polyfunctional acrylic monomer in combination.
  • the lower limit of the content of the monofunctional acrylic monomer in the die attach paste is, for example, 150 masses with respect to 100 mass parts of the polyfunctional acrylic monomer. Part or more, preferably 200 parts by weight or more, and more preferably 250 parts by weight or more.
  • the monomer has an appropriate branched shape by polymerization, and swelling of the cured product of the die attach paste due to moisture absorption can be suppressed. Therefore, it can suppress that the hardened
  • the upper limit of content of the monofunctional acrylic monomer in a die attach paste is 650 masses with respect to 100 mass parts of polyfunctional acrylic monomers, for example.
  • the epoxy monomer according to the second embodiment may be a monofunctional epoxy monomer having only one epoxy group in its structure, or a polyfunctional epoxy monomer having two or more epoxy groups in its structure. May be.
  • cured material of die attach paste can be reduced by including a monofunctional epoxy monomer as a monomer. Thereby, the degree of warpage before moisture absorption can be controlled. Moreover, the viscosity of a die attach paste can be adjusted and handling property can be improved.
  • the monofunctional epoxy monomer examples include 4-tert-butylphenyl glycidyl ether, m, p-cresyl glycidyl ether, phenyl glycidyl ether, and cresyl glycidyl ether.
  • 1 type (s) or 2 or more types can be used in combination among the above specific examples.
  • Epoxy resin a liquid resin having two or more epoxy groups in one molecule can be used.
  • the epoxy resin include trisphenolmethane type epoxy resin, hydrogenated bisphenol A type liquid epoxy resin, bisphenol-F-diglycidyl ether, orthocresol novolac type epoxy resin, and the like.
  • an epoxy resin it can use 1 type or in combination of 2 or more types among the said specific examples.
  • the epoxy resin preferably contains bisphenol-F-diglycidyl ether. Thereby, the handling property of the die attach paste can be improved, and the die attach paste can be suitably cured and shrunk.
  • the dicarboxylic acid one or two or more of the above specific examples can be used.
  • Specific examples of the compound having an allyl group include polyethers, polyesters, polycarbonates, polyacrylates, polymethacrylates, polybutadienes, and butadiene acrylonitrile copolymers having an allyl group.
  • a compound provided with an allyl group it can use 1 type or in combination of 2 or more types among the said specific examples.
  • the allyl resin specifically, a polymer of bis (2-propenyl) 1,2-cyclohexanedicarboxylate and propane-1,2-diol can be used.
  • radical polymerization initiator specifically, an azo compound, a peroxide, or the like can be used.
  • a radical polymerization initiator it can use in the said specific example 1 type or in combination of 2 or more types.
  • peroxides are preferably used as the radical polymerization initiator.
  • phenol resin-based curing agent examples include novolak type phenol resins such as phenol novolak resin, cresol novolak resin, bisphenol novolak resin, and phenol-biphenyl novolak resin; polyvinylphenol; polyfunctionality such as triphenylmethane type phenol resin.
  • the method for producing a die attach paste includes a mixing step of mixing the raw material components described above to produce a mixture, and a defoaming step of removing air contained in the mixture.
  • the die attach paste according to the second embodiment is applied to an Ag-plated copper frame having a length of 15.5 mm and a width of 6.5 mm so that the thickness of the die attach paste is 35 ⁇ 5 ⁇ m.
  • a silicon chip having a length of 15.0 mm, a width of 6.0 mm, and a thickness of 0.2 mm is placed on the die attach paste to obtain a laminate, and the laminate is subjected to a temperature from 25 ° C. to 175 ° C. for 30 minutes.
  • the cured product was obtained by heat-treating at 175 ° C. for 5 hours. The amount of warpage when the cured product was heat-treated at 275 ° C.
  • is 20 ⁇ m or less, for example, 18 ⁇ m or less, when the amount of warping when W2 is heat-treated at 275 ° C. for 168 hours and heat-treated at 275 ° C. for 1 minute is W2.
  • More preferably 16 ⁇ m or less, and more preferably 14 ⁇ m or less.
  • may be, for example, 0 ⁇ m or more, or 0.1 ⁇ m or more. As the difference between W1 and W2 is smaller, the warp of the semiconductor device can be within a desired numerical range even during moisture absorption, and the mounting reliability of the semiconductor device can be improved.
  • the die attach paste according to the second embodiment is suitably used for a semiconductor device such as a semiconductor package, for example.
  • the types of semiconductor packages are specifically MAP (Mold Array Package), QFP (Quad Flat Package), SOP (Small Outline Package), CSP (Chip Size Package), and QFN (Quad Flat Non-Lead).
  • MAP Mold Array Package
  • QFP Quant Flat Package
  • SOP Small Outline Package
  • CSP Chip Size Package
  • QFN Quadraturethane
  • SON Small Outline Non-leaded Package
  • BGA Ball Grid Array
  • LF-BGA Lead Frame BGA
  • FCBGA Felip Chip BW
  • MAPBGA Molded Array B) BGA
  • Fan-In type eWLB Fan-Out type eWLB, etc. Types.
  • the base material 30 is, for example, a lead frame.
  • the semiconductor element 20 is mounted on the die pad 32 or the base material 30 via the adhesive layer 10.
  • the semiconductor element 20 is electrically connected to the outer lead 34 (base material 30) through the bonding wire 40, for example.
  • the base material 30 which is a lead frame is comprised by 42 alloy and Cu frame, for example.
  • the base material 30 may be an organic substrate or a ceramic substrate.
  • the organic substrate for example, a substrate composed of an epoxy resin, a cyanate resin, a maleimide resin or the like is preferable.
  • the surface of the base material 30 may be coated with a metal such as silver or gold. Thereby, the adhesiveness of the contact bonding layer 10 and the base material 30 can be improved.
  • the heat treatment condition is, for example, that the temperature is raised from a room temperature of 25 ° C. to a temperature of 100 ° C. or more and 300 ° C. or less over 10 minutes to 2 hours. Can be set to heat treatment for hours.
  • the base material 30 and the semiconductor element 20 are bonded via the adhesive layer 10.
  • the semiconductor element 20 and the base material 30 are electrically connected using the bonding wire 40.
  • the semiconductor element 20 is sealed with a sealing resin 50. Thereby, a semiconductor device can be manufactured.
  • Silver powder 1 spherical silver powder 1 (specific surface area: 0.98 m 2 / g, tap density: 5.03 g / cm 3 , D 50 : 1.03 ⁇ m, D 90 : 1.90 ⁇ m, ratio of D 90 to D 50 ( D 90 / D 50): 1.84 )
  • Silver powder 2 spherical silver powder 2 (specific surface area: 0.71 m 2 / g, tap density: 5.88 g / cm 3 , D 50 : 1.26 ⁇ m, D 90 : 2.49 ⁇ m, ratio of D 90 to D 50 ( D 90 / D 50): 1.98 )
  • Silver powder 3 spherical silver powder 3 (specific surface area: 0.19 m 2 / g, tap density: 5.56 g / cm 3 , D 50 : 4.19 ⁇ m, D 90 : 7.05 ⁇ m, ratio of D 90 to D 50 ( D 90 / D 50): 1.68 )
  • Silver powder 4 Flaky silver powder
  • Polycarbonate resin 1 Methacrylated polycarbonate resin at both ends (UM-90 (1/3) DM, Ube Industries, Ltd., weight average molecular weight 900, 2 methacrylic groups per molecule)
  • Low stress agent 1 polybutadiene maleic anhydride adduct (Ricobond 1731 manufactured by Satomer, number average molecular weight 5400, acid anhydride equivalent 583)
  • Curing accelerator Dicyanamide (EH-3636AS manufactured by ADEKA Corporation)
  • Polymerization initiator bis (1-phenyl-1-methylethyl) peroxide (Perkadox BC manufactured by Kayaku Aguso Co., Ltd.)
  • the solvent was removed from the filtrate obtained by filtering the obtained solvent layer again using an evaporator and a vacuum dryer to obtain a product as a (meth) acrylic copolymer 5 (yield about 98%).
  • the product obtained was liquid at room temperature.
  • a weight average molecular weight (styrene conversion) is about 12000, and that the raw material methacrylic acid does not remain in this.
  • a hydroxyl group had disappeared, a methacryl group was present in the product, and an ester bond was present in the product. It was confirmed that it was generated.
  • a silicon chip (2 ⁇ 2 mm, thickness 0.35 mm) was bonded to the lead frame (silver spot plated copper frame) using the obtained die attach paste. Specifically, after the temperature is raised to 175 ° C. over 30 minutes, the die attach paste is cured by maintaining the temperature for 60 minutes, whereby a cured product of the die attach paste is applied to the lead frame. A silicon chip was adhered to the substrate. Next, after die bonding the lead frame, the package size of the lead frame becomes 17.9 ⁇ 7.2 ⁇ 2.5 mm by using an epoxy resin composition for semiconductor encapsulation (EME-G700LS, manufactured by Sumitomo Bakelite Co., Ltd.).
  • EME-G700LS epoxy resin composition for semiconductor encapsulation
  • a semiconductor device (SOP) was obtained by performing post mold cure at 175 ° C. for 4 hours.
  • SOP semiconductor device
  • eight semiconductor devices were manufactured by the above-described method.
  • the eight semiconductor devices obtained were subjected to a moisture absorption treatment for 120 hours under the conditions of 60 ° C. and a relative humidity of 60%, followed by IR reflow treatment (reflow three times at 260 ° C. for 10 seconds). went.
  • the presence or absence of peeling at the interface between the lead frame and the silicon chip was measured using an ultrasonic flaw detector (transmission type). The results are shown in Table 1 as the number of peels / the number of evaluations.
  • Monofunctional acrylic monomer 1 2-phenoxyethyl methacrylate (Kyoeisha Chemical Co., PO) -Multifunctional acrylic monomer 1: Ethylene glycol dimethacrylate (manufactured by Kyoeisha Chemical Co., EG) -Multifunctional acrylic monomer 2: Trimethylolpropane trimethacrylate (manufactured by Kyoeisha Chemical Co., TMP)
  • Polyfunctional acrylic monomer 3 propoxylated bisphenol A diacrylate (A-BBP-3, manufactured by Kyoeisha Chemical Co., Ltd.)
  • Polyfunctional acrylic monomer 4 hexane-1,6-diol bis (2-methyl acrylate) (1,6HX, manufactured by Kyoeisha Chemical Co., Ltd.)
  • Polyfunctional epoxy monomer 1 1,4-bis [(oxiran-2-ylmethoxy) methyl] cyclohexane (manufactured by Nippon Steel Chemical Co
  • Epoxy oligomer 1 bisphenol-F-diglycidyl ether (Nippon Kayaku Co., Ltd., RE-403S)
  • Epoxy oligomer 2 Modified epoxy resin (manufactured by DIC, EXA-4850-1000)
  • Allyl oligomer 1 Polymer of bis (2-propenyl) 1,2-cyclohexanedicarboxylate and propane-1,2-diol (manufactured by Kanto Chemical Co., Inc.)
  • Phenol curing agent 1 Dihydroxydiphenylmethane (DIC-BPF, manufactured by DIC)
  • Imidazole curing agent 1 2-phenyl-4-methyl-5-hydroxymethylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., 2P4MHZ)
  • the die attach paste was applied to the semiconductor device, the amount of warp when heated without moisture absorption, and the die attach paste was applied to the semiconductor device. The amount of warpage when heated after moisture absorption was evaluated. Details will be described below. First, an Ag-plated copper lead frame having a length of 15.5 mm and a width of 6.5 mm was prepared. Next, the die attach pastes of Examples and Comparative Examples were manually applied onto the lead frame. Here, the die attach paste was applied so that the coating thickness was 35 ⁇ 5 ⁇ m.
  • the warpage amount is the maximum value of the distance from the diagonal line connecting any two vertices located diagonally in the in-plane direction of the silicon chip to the position where the silicon chip exists in the direction perpendicular to the diagonal line Indicates. That is, the amount of warpage shows a positive value for either a cry warp where the cured body is convex upward or a smile warp where the cured body is convex downward.
  • each example and each comparative example are those in which the warp amounts W1 and W2 are measured when the warp amounts W1 and W2 are measured with the surface where the lead frame of the laminated body is present as the ground and the surface where the silicon chip is present as the top surface. there were. The evaluation results are shown in Table 3 below.
  • the unit is ⁇ m.
  • warping of the cured body is caused by integration of the lead frame, die attach paste, and silicon chip, and the lead frame and silicon chip are 1 at 275 ° C. There was no peeling before and after the heat treatment for minutes.
  • the mounting reliability of the semiconductor devices using the die attach pastes of Examples 23 to 28 and Comparative Examples 7 to 9 was evaluated. As an evaluation of mounting reliability, MSL (Moisture Sensitivity Level) performance was measured. The MSL performance was set to MSL Lv2a according to JEDEC STANDARD 22-A113D. A detailed method is shown below. First, a lead frame (a silver spot plated copper frame) and a silicon chip (length 2 mm ⁇ width 2 mm, thickness 0.35 mm) were prepared. Next, the die attach pastes of Examples 23 to 28 and Comparative Examples 7 to 9 were applied to a silicon chip so as to have a coating thickness of 25 ⁇ 5 ⁇ m, and a lead frame was disposed.
  • MSL Magnetic Sensitivity Level
  • a laminated body in which a silicon chip, a die attach paste, and a lead frame were laminated in this order was produced.
  • the surface of the lead frame that contacts the die attach paste is made of silver plating.
  • the temperature was increased from 25 ° C. to 30 ° C. over 30 minutes, and then heat treated at 175 ° C. for 60 minutes to cure the die attach paste of the laminate, thereby producing a cured product.
  • the cured product is sealed with a semiconductor sealing epoxy resin composition (EME-G700LS, manufactured by Sumitomo Bakelite Co., Ltd.) so that the package size is 17.9 mm long ⁇ 7.2 ⁇ 2.5 mm thick.
  • the epoxy resin composition for semiconductor encapsulation was cured by heat treatment for 4 hours at a temperature of 175 ° C. to obtain a semiconductor device.
  • This semiconductor device was subjected to a moisture absorption treatment for 120 hours at 60 ° C. and a relative humidity of 60%, and then an IR reflow treatment (reflow three times at 260 ° C. for 10 seconds).
  • the semiconductor device after the IR reflow process was evaluated for the presence or absence of peeling using a transmission ultrasonic flaw detector. Evaluation was performed on eight semiconductor devices, and the average value was evaluated according to the following criteria. The evaluation results are shown in Table 3 below.
  • the fillet shape stability of the semiconductor devices using the die attach pastes of Examples 23 to 28 and Comparative Examples 7 to 9 was evaluated. Details will be described below. First, a lead frame (silver spot-plated copper frame) and a silicon chip (length 7 mm ⁇ width 7 mm, thickness 0.20 mm) were prepared. Next, 15 ⁇ 3 mm 3 of the die attach pastes of Examples 23 to 28 and Comparative Examples 7 to 9 were applied to the silicon chip using a die bonder (Shinkawa Co., SPA-400), and then a load of 8N was applied. The silicon chip was mounted on the lead frame by adding to the silicon chip.
  • a die bonder Shinkawa Co., SPA-400
  • the fillet height was 150 ⁇ m or less. Further, when the silicon chip was peeled from the laminate, it was observed that the die attach paste spread and adhered to the entire surface of the silicon chip 7 mm long ⁇ 7 mm wide. ⁇ : The fillet height was larger than 150 ⁇ m and not larger than 200 ⁇ m. Further, when the silicon chip was peeled from the laminate, it was observed that the die attach paste spread and adhered to the entire surface of the silicon chip 7 mm long ⁇ 7 mm wide. X: The fillet height was larger than 200 ⁇ m.
  • die shear strength The die shear strength of the semiconductor devices using the die attach pastes of Examples 23 to 28 and Comparative Examples 7 to 9 was evaluated. Details will be described below. First, a lead frame (a silver spot plated copper frame) and a silicon chip (length 2 mm ⁇ width 2 mm, thickness 0.35 mm) were prepared. Next, the die attach pastes of Examples 23 to 28 and Comparative Examples 7 to 9 were applied to a silicon chip so as to have a coating thickness of 25 ⁇ 5 ⁇ m, and a lead frame was disposed. That is, a laminated body in which a silicon chip, a die attach paste, and a lead frame were laminated in this order was produced. The surface of the lead frame that contacts the die attach paste is made of silver plating.
  • the temperature was increased from 25 ° C. to 30 ° C. over 30 minutes, and then heat treated at 175 ° C. for 60 minutes to cure the die attach paste of the laminate, thereby producing a cured product.
  • the cured product was absorbed at a temperature of 85 ° C. and a humidity of 85% for 72 hours, and then the die shear strength between the lead frame and the cured product of the die attach paste at 260 ° C. was measured using a universal bond tester. did.
  • the evaluation results are shown in Table 3 below.
  • the unit is N / (2 mm ⁇ 2 mm).

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Polymerisation Methods In General (AREA)
  • Epoxy Resins (AREA)
  • Macromonomer-Based Addition Polymer (AREA)

Abstract

La pâte de fixation de puce selon la présente invention comprend : un copolymère (méth) acrylique (A) ayant un groupe réactif; un monomère (méth) acrylique (B); et une charge (C), le groupe réactif du copolymère (méth) acrylique (A) étant au moins un groupe choisi parmi un groupe époxy, un groupe amino, un groupe vinyle, un groupe carboxyle, et un groupe hydroxyle, le poids moléculaire moyen en poids du copolymère (méth) acrylique (A) étant de 2 000 à 14000, et la taille de particule D50 de la charge (C) lors de l'accumulation de 50 % dans une distribution de taille de particule à base de volume étant de 0,3 à 4,0 µm.
PCT/JP2017/029106 2016-08-19 2017-08-10 Pâte de fixation de puce et dispositif semi-conducteur Ceased WO2018034234A1 (fr)

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KR1020197006098A KR102040529B1 (ko) 2016-08-19 2017-08-10 다이 어태치 페이스트 및 반도체 장치

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WO2022065496A1 (fr) * 2020-09-28 2022-03-31 昭和電工マテリアルズ株式会社 Film adhésif pour connexion de circuits, composition contenant une charge minérale, structure de connexion de circuits et son procédé de fabrication
WO2022239806A1 (fr) * 2021-05-14 2022-11-17 住友ベークライト株式会社 Pâte comprenant de l'argent
JP2022177707A (ja) * 2021-05-18 2022-12-01 東亞合成株式会社 エポキシ基含有（メタ）アクリル系重合体及びそれを含む硬化性組成物
TWI824045B (zh) * 2018-10-24 2023-12-01 日商住友電木股份有限公司 導電性樹脂組成物及半導體裝置
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TW201825536A (zh) 2018-07-16
CN109643662B (zh) 2021-07-13
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