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WO2018030680A1 - Dispositif électroluminescent à semi-conducteurs - Google Patents

Dispositif électroluminescent à semi-conducteurs Download PDF

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Publication number
WO2018030680A1
WO2018030680A1 PCT/KR2017/008101 KR2017008101W WO2018030680A1 WO 2018030680 A1 WO2018030680 A1 WO 2018030680A1 KR 2017008101 W KR2017008101 W KR 2017008101W WO 2018030680 A1 WO2018030680 A1 WO 2018030680A1
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WIPO (PCT)
Prior art keywords
emitting device
semiconductor
light emitting
layer
light guide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2017/008101
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English (en)
Korean (ko)
Inventor
김경민
김봉환
박은현
전수근
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Semicon Light Co Ltd
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Semicon Light Co Ltd
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Filing date
Publication date
Application filed by Semicon Light Co Ltd filed Critical Semicon Light Co Ltd
Publication of WO2018030680A1 publication Critical patent/WO2018030680A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses

Definitions

  • the present disclosure relates to a semiconductor light emitting device as a whole, and more particularly to a semiconductor light emitting device having a high luminous efficiency.
  • the semiconductor light emitting device refers to a semiconductor optical device that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting device.
  • GaAs type semiconductor light emitting elements used for red light emission, etc. are mentioned.
  • FIG. 1 is a view illustrating a conventional semiconductor light emitting device (Lateral Chip), the semiconductor light emitting device is a substrate 100, a buffer layer 200 on the substrate 100, a first semiconductor layer having a first conductivity ( 300), an active layer 400 that generates light through recombination of electrons and holes, and a second semiconductor layer 500 having a second conductivity different from the first conductivity are sequentially deposited, and translucent thereon for current diffusion thereon.
  • the conductive film 600 and the electrode 700 serving as the bonding pad are formed, and the electrode 800 serving as the bonding pad is formed on the etched and exposed first semiconductor layer 300.
  • the buffer layer 200 may be omitted.
  • FIG. 2 is a view illustrating another example of a conventional semiconductor light emitting device (Flip Chip), in which a semiconductor light emitting device includes a substrate 100, a first semiconductor layer 300 having a first conductivity, and an electron on the substrate 100; An active layer 400 that generates light through recombination of holes, and a second semiconductor layer 500 having a second conductivity different from the first conductivity are sequentially deposited, and reflect light onto the substrate 100 thereon. An electrode film 901, an electrode film 902, and an electrode film 903 having three layers are formed, and an electrode 800 serving as a bonding pad is formed on the first semiconductor layer 300 that is etched and exposed. have.
  • a semiconductor light emitting device includes a substrate 100, a first semiconductor layer 300 having a first conductivity, and an electron on the substrate 100;
  • An active layer 400 that generates light through recombination of holes, and a second semiconductor layer 500 having a second conductivity different from the first conductivity are sequentially deposited, and reflect light onto the substrate 100 thereon.
  • the semiconductor light emitting device is a first semiconductor layer 300 having a first conductivity, the active layer for generating light through recombination of electrons and holes 400, a second semiconductor layer 500 having a second conductivity different from the first conductivity is sequentially deposited, and a metal for reflecting light to the first semiconductor layer 300 on the second semiconductor layer 500.
  • the reflective film 910 is formed, and the electrode 940 is formed on the support substrate 930 side.
  • the metal reflective film 910 and the support substrate 930 are bonded by the wafer bonding layer 920.
  • An electrode 800 that functions as a bonding pad is formed in the first semiconductor layer 300.
  • FIG. 4 is a view showing an example of the semiconductor light emitting device shown in US Patent No. 6,650,044, the semiconductor light emitting device in the form of a flip chip, having a first conductivity on the substrate 100, the substrate 100
  • the first semiconductor layer 300, an active layer 400 that generates light through recombination of electrons and holes, and a second semiconductor layer 500 having a second conductivity different from the first conductivity are sequentially deposited thereon.
  • a reflective film 950 for reflecting light toward the substrate 100 is formed, and an electrode 800 serving as a bonding pad is formed on the first semiconductor layer 300 that is etched and exposed, and the substrate 100 and The encapsulant 1000 is formed to surround the semiconductor layers 300, 400, and 500.
  • the reflective film 950 may be formed of a metal layer as shown in FIG.
  • the semiconductor light emitting device is mounted on a printed circuit board (PCB) 1200 having electrical wires 820 and 960 through conductive adhesives 830 and 970.
  • the encapsulant 1000 mainly contains phosphors. Since the semiconductor light emitting device includes the encapsulant 1000, the semiconductor light emitting device portion except for the encapsulant 1000 may be referred to as a semiconductor light emitting device chip for the purpose of classification. In this manner, the encapsulant 1000 may be applied to the semiconductor light emitting device chip as shown in FIG. 4.
  • the present disclosure is characterized by improving light extraction efficiency in a semiconductor light emitting device that does not include a pattern sapphire substrate (PSS).
  • PSS pattern sapphire substrate
  • a light guide layer provided on an opposite side of the growth substrate on which the plurality of semiconductor layers are formed, wherein the light guide layer is made of a material having the same refractive index as that of the growth substrate.
  • FIG. 1 is a view showing an example of a conventional semiconductor light emitting device (Lateral Chip),
  • FIG. 2 is a view showing another example (flip chip) of a conventional semiconductor light emitting device
  • FIG. 3 is a view showing another example of a conventional semiconductor light emitting device (Vertical Chip)
  • FIG. 4 is a view showing an example of a semiconductor light emitting device shown in US Patent No. 6,650,044;
  • FIG. 5 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 6 is a view for explaining another example of the semiconductor light emitting device chip according to the present disclosure.
  • FIG. 7 and 8 are views for explaining another example of the light guide layer of the semiconductor light emitting device chip according to the present disclosure.
  • 9 to 11 are views for explaining an example of a method for manufacturing a semiconductor over-emitting device according to the present disclosure.
  • FIG. 12 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 5 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure, and includes a base 1, a semiconductor light emitting device chip 2, and an encapsulant 3.
  • the base 1 includes an insulating portion 11, a first conductive portion 12 electrically separated by the insulating portion 11, and a second conductive portion 13.
  • the first and second conductive portions 12 and 13 are exposed up and down and are flat.
  • the first and second conductive portions 12 and 13 are passages for electrical conduction and may be heat dissipation passages.
  • the base 1 is formed of a laminate by repeatedly laminating a plurality of conductive plates (for example, Al / Cu / Al) using an insulating material such as an insulating adhesive (for example, epoxy). By cutting such a laminate (for example, a wire cutting method), a base 1 of a plate shape (not shown) is formed. According to the cutting method, the base 1 may be formed long in a band shape or may be formed as wide as a plate.
  • the width of the first and second conductive parts 12 and 13 and the width of the insulating part 11 may be adjusted by changing the thicknesses of the conductive plate and the insulating adhesive.
  • the encapsulant 3 surrounds the semiconductor light emitting device chip 2 to expose the first and second electrodes 70 and 80, and is formed on the entire surface of the base 1 on which the semiconductor light emitting device chip 2 is formed.
  • the encapsulant 3 When the encapsulant 3 contains a photoconversion agent (not shown) such as a phosphor, the encapsulant 3 is excited by light from the semiconductor light emitting device chip 2 to emit light whose wavelength is converted in all directions. In the semiconductor light emitting device, the encapsulant 3 may be omitted.
  • a photoconversion agent such as a phosphor
  • flip chips of the type illustrated in FIGS. 6 to 8 may be used, and a plurality of semiconductor layers may be disposed on the growth substrate 20 and the first surface 21 of the growth substrate 20.
  • the light guide layer 60 located in the 2nd surface 22 opposite to 21 is included.
  • the growth substrate 20 may be, for example, sapphire, SiC, GaN, AlN, ZnO, and the growth substrate 20 may be finally removed.
  • the growth substrate 20 is made of sapphire having a refractive index of 1.8, and may be formed to a thickness of about 100um to 350um.
  • the plurality of semiconductor layers 30, 40, and 50 may include a first semiconductor layer 30 having a first conductivity (eg, n-type) (eg, Si-doped GaN), a second conductivity different from the first conductivity (eg, p). Type) and an active layer interposed between the first semiconductor layer 30 and the second semiconductor layer 50 and generating light by recombination of electrons and holes.
  • a first conductivity eg, n-type
  • p p
  • Type a second conductivity different from the first conductivity
  • an active layer interposed between the first semiconductor layer 30 and the second semiconductor layer 50 and generating light by recombination of electron
  • the positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and are mainly made of GaN in the group III nitride semiconductor light emitting device. Additional layers may be provided as needed.
  • the semiconductor light emitting device may emit light from ultraviolet to infrared rays, depending on the material constituting the semiconductor light emitting device.
  • a buffer layer (not shown) is formed between the growth substrate 20 and the plurality of semiconductor layers 30, 40, and 50.
  • the first electrode 70 is insulated from the plurality of semiconductor layers 30, 40, and 50, and the first semiconductor layer 30 is formed through first electrical connections 71 formed through the reflective layer R. It is in electrical communication with and supplies electrons, and is bonded to the first conductive portion 12 of the base 1.
  • the first electrical connection 71 passes through at least the second semiconductor layer 50 and the active layer 40 to the first semiconductor layer 30.
  • the second electrode 80 is insulated from the plurality of semiconductor layers 30, 40, and 50, and the second semiconductor layer 50 is formed through second electrical connections 81 formed through the reflective layer R. It is in electrical communication with and supplies holes, and is bonded to the second conductive portion 13 of the base 1.
  • the first and second electrodes 70 and 80 which are bonded to the first and second conductive parts 12 and 13, respectively, may be in contact with a portion of the insulating part 11. Accordingly, the heat transfer area can be increased from the first and second electrodes 70 and 80.
  • the reflective layer R is formed to reflect light toward the growth substrate 20 between the second semiconductor layer 50 and the first and second electrodes 70 and 80.
  • the reflective layer R may have a multilayer structure including an insulating layer such as SiO 2 / TiO 2, a distributed bragg reflector (DBR), or an omni-directional reflector (ODR).
  • DBR distributed bragg reflector
  • ODR omni-directional reflector
  • a current spreading electrode (eg, ITO) may be further provided between the reflective layer R and the second semiconductor layer 50 to spread current.
  • the light guide layer 60 includes a first surface 60a in contact with the growth substrate 20 and a second surface 60b opposite to the first surface, and is made of the same material having the same refractive index as the growth substrate 20. Can be done.
  • the growth substrate 20 and the light guide layer 60 are made of a material having the same refractive index, for example, made of sapphire, the growth substrate 20 and the light guide layer 60 have the same refractive index of 1.8.
  • the growth substrate 20 is not a patterned sapphire substrate (PSS).
  • an adhesive layer A made of an insulating material such as an insulating adhesive (eg, epoxy) is formed between the growth substrate 20 and the light guide layer 60.
  • the adhesive layer A may be formed of a material having the same refractive index as that of the growth substrate 20 and the light guide layer 60.
  • the growth substrate 20 and the light guide layer 60 may have a refractive index of 1.8.
  • the adhesive layer (A) is made of a material having a refractive index of 1.8.
  • the present invention is not limited thereto, and the adhesive layer A may be formed of a material having a refractive index greater than 1 and less than 1.8.
  • the adhesive layer A may have a minimum thickness that does not affect the refractive index between the growth substrate 20 and the light guide layer 60.
  • the adhesive layer (A) may have a thickness of up to 100um.
  • the light guide layer 60 is a protruding surface having a plurality of protrusions on the first and second surfaces 60a and 60b, for example, a patterned sapphire substrate (PSS). Sapphire Substrate).
  • PSS patterned sapphire substrate
  • Sapphire Substrate Sapphire Substrate
  • the first and second surfaces 60a and 60b of the light guide layer 60 are formed as protruding surfaces, the light incident from the growth substrate 20 is scattered by the first surface 60a and the second surface 60b. Some parts are scattered and emitted from the second surface 60b, and some parts are reflected to the first surface 60a and are scattered and emitted to the second surface 60b.
  • the light guide layer 60 made of a material having the same refractive index as the growth substrate 20 includes the first and second surfaces 60a and 60b, which are protruding surfaces having a plurality of protrusions, thereby preventing the total reflection phenomenon.
  • Increasing the scattering effect increases the extraction efficiency. That is, when the growth substrate 20 is not a patterned sapphire substrate, the luminous intensity is formed on the second surface 22 of the growth substrate 20 having the same refractive index as the growth substrate 20 and the protruding surface having a plurality of protrusions.
  • the light emitted from the active layer 40 by the protruding surface is scattered to increase the light extraction efficiency.
  • the width of the light guide layer 60 is preferably formed at least about twice the width of the growth substrate 20.
  • the width of the light guide layer 60 is larger than the width of the growth substrate 20, the amount of light scattered by the first and second surfaces 60a and 60b of the light guide layer 60 and emitted to the outside increases. The extraction efficiency can be further increased.
  • the width of the light guide layer 60 may be formed to be the same as or smaller than the width of the growth substrate 20.
  • the light guide layer 60 may be formed to have a thickness of about 100 ⁇ m to 350 ⁇ m which is the same as that of the growth substrate 20, but the thickness of the light guide layer 60 and the growth substrate 20 are different from each other. Can be.
  • the protruding surface of the light guide layer 60 is formed using a nanoimprinting process, photolithography, AGOG (Aluminum deposition, Growth of Oxide, and Grain growth) method, and the plurality of protrusions have a horn shape. , Hemispherical or cylindrical shape.
  • FIG. 7 is a view illustrating an example of the semiconductor light emitting device chip according to the present disclosure as shown in FIG. 2.
  • the light guide layer 61 is different from the light guide layer 60 shown in FIG. It is a flat surface and the 2nd surface 61b has the protrusion surface which has a some permite
  • the first surface 61a of the light guide layer 61 is formed as a flat surface, and the second surface 61b is formed as a protruding surface, so that light incident from the growth substrate 20 passes through the first surface 61a. Some parts are scattered and emitted from the second surface 61b by moving to the second surface 61b, and some are reflected by the first surface 61a and then moved back to the second surface 61b to be emitted.
  • FIG. 8 is a view for explaining another example of the light guide layer of the semiconductor light emitting device chip according to the present disclosure.
  • the light guide layer 62 has a first surface 62a unlike the light guide layer 60 shown in FIG. 6. Is a protruding surface, and the second surface 62b has a flat surface having a plurality of protrusions.
  • the first surface 62a of the light guide layer 62 is formed as a protruding surface, and the second surface 62b is formed as a flat surface, so that light incident from the growth substrate 20 passes through the first surface 62a. It is scattered and moved to the second surface 60b to be emitted.
  • FIG. 9 to 11 are diagrams for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • a dam 32 having an opening 34 on a base 1, Alternatively, a mask is provided and the semiconductor light emitting device chip 2 is placed on the base 1 exposed through the opening 34 (see FIG. 9A).
  • the height of the dam 32 may be the same as the height of the semiconductor light emitting device chip 2, but is not limited thereto and may be higher than the height of the semiconductor light emitting device chip 2.
  • the light guide layer 60 of the semiconductor light emitting device chip 2 may be sequentially stacked on the growth substrate 20 by an adhesive layer (A). By laminating using the adhesive layer (A), the contact force may increase physically.
  • an encapsulant 3 is formed in the opening 34 (see FIG. 9B).
  • the encapsulant 3 is cured, and the semiconductor light emitting device chip 2 on which the encapsulant 3 is formed is separated from the dam 32. Through the separation process, an assembly having a semiconductor light emitting device chip 2 and an encapsulant 3 exposing the first electrode 70 and the second electrode 80 and surrounding the semiconductor light emitting device chip 2 is formed. . In the semiconductor light emitting device, the encapsulant 3 may be omitted.
  • the semiconductor light emitting device chip 2 includes the light guide layer 60 having the same refractive index as that of the growth substrate 20 and the protruding surface having a plurality of protrusions on the second surface 22 of the growth substrate 20.
  • the light emitted from the active layer 40 by the protruding surface is scattered to increase the light extraction efficiency.
  • Side 36S due to opening 38 of dam 36 may be an inclined surface inclined with respect to base 1.
  • the inclined surface is formed into a flat surface, but can now be formed concave without being limited.
  • the height of the dam 32 may be the same as the height of the semiconductor light emitting device chip 2, but is not limited thereto and may be higher than the height of the semiconductor light emitting device chip 2.
  • an encapsulant 3 is formed in the opening 38 (see FIG. 10B).
  • the encapsulant 3 is cured, and the semiconductor light emitting device chip 2 on which the encapsulant 3 is formed is separated from the dam 36. Through the separation process, an assembly having a semiconductor light emitting device chip 2 and an encapsulant 3 exposing the first electrode 70 and the second electrode 80 and surrounding the semiconductor light emitting device chip 2 is formed. . In the semiconductor light emitting device, the encapsulant 3 may be omitted.
  • a semiconductor light emitting device chip 2 is formed on a base 31 and a dam 31 having an opening having a shape different from that shown in FIGS. 9 and 10 and a base 1 exposed by the opening 33. Is placed (see FIG. 11A).
  • the height of the dam 32 is formed lower than the height of the semiconductor light emitting device chip (2). That is, the dam 32 may be formed lower than the light guide layer 60.
  • the sealing material 3 is formed in the opening 33 (see FIG. 11B).
  • the encapsulant 3 may be omitted.
  • FIG. 12 is a view for explaining another example of a semiconductor light emitting device according to the present disclosure, by using an adhesive material on a base 1 having an encapsulant 3 surrounding the semiconductor light emitting device chip 2. And a bonded lens L.
  • the lens L may be formed of a material having the same refractive index as that of the light guide layers 60, 61, and 62 and the growth substrate 20 of the semiconductor light emitting device chip 2.
  • the adhesive material for connecting the lens L and the semiconductor light emitting device may also be made of a material having the same refractive index as that of the growth substrate 20 and the light guide layers 60, 61, and 62, for example, the growth substrate 20.
  • the light guide layers 60, 61, and 62 are made of sapphire having a refractive index of 1.8
  • the adhesive material is also made of a material having a refractive index of 1.8.
  • the present invention is not limited thereto, and the adhesive material may be formed of a material having a refractive index greater than 1 and less than 1.8.
  • the adhesive material may have a minimum thickness that does not affect the refractive index between the growth substrate 20 and the light guide layers 60, 61, and 62.
  • a first semiconductor layer having a first conductivity, an active layer for generating light through recombination of electrons and holes, and a second semiconductor layer having a second conductivity different from the first conductivity are sequentially stacked.
  • a plurality of semiconductor layers A reflection layer provided on one side of the plurality of semiconductor layers and reflecting light generated from the active layer; A first electrode and a second electrode supplying electrons and holes on the reflective layer, the first electrode and the second electrode electrically communicating with the plurality of semiconductor layers; A growth substrate provided on an opposite side of the reflective layer based on the plurality of semiconductor layers; And a light guide layer provided on an opposite side of the growth substrate on which the plurality of semiconductor layers are formed, wherein the light guide layer is made of a material having the same refractive index as that of the growth substrate.
  • the growth substrate and the light guide layer are at least one of Al 2 O 3, SiC, GaN, AlN, and ZnO.
  • the light guide layer has a first surface in contact with the growth substrate and a second surface opposite to the first surface, wherein the first surface and the second surface are protruding surfaces having a plurality of protrusions. .
  • the light guide layer has a first surface in contact with the growth substrate and a second surface opposite to the first surface, and at least one of the first surface or the second surface is a protruding surface having a plurality of protrusions.
  • a semiconductor light emitting element is a semiconductor light emitting element.
  • a semiconductor light emitting element wherein the second surface of the light guide layer is a protruding surface having a plurality of protrusions, and the first surface of the light guide layer is a flat surface.
  • a semiconductor light emitting element wherein the first surface of the light guide layer is a protruding surface having a plurality of protrusions, and the second surface of the light guide layer is a flat surface.
  • a semiconductor light emitting device characterized in that the width of the light guide layer is wider than that of the growth substrate.
  • a semiconductor light emitting element characterized in that the width of the light guide layer is formed at least about twice the width of the growth substrate.
  • a semiconductor light emitting element comprising a connection layer interposed between the growth substrate and the light guide layer.
  • a base having an insulating film, a first conductive portion electrically separated by the insulating film, and having a first conductive portion joined to the first electrode and a second conductive portion joined to the second electrode; And an encapsulation material formed on the entire surface of the base connected to the first and second electrodes.
  • a semiconductor light emitting device comprising a lens bonded to the base having an encapsulant surrounding the semiconductor light emitting device chip using an adhesive material.
  • a light emitting layer made of a material having the same refractive index as a growth substrate is provided on a semiconductor light emitting device chip, a difference in refractive index between the growth substrate and the light guide layer does not occur, Light extraction efficiency may be improved by effectively preventing total reflection occurring at an interface when light enters a medium having a high refractive index from a medium having a small refractive index.
  • At least one surface of the light guide layer has a protruding surface having a plurality of protrusions, it is possible to reduce light absorption in the light emitting device and increase light extraction efficiency.
  • the width of the light guide layer is formed larger (wideer) than the width of the growth substrate, the amount of light scattered by the light guide layer may be increased to increase the light extraction efficiency.

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Abstract

La présente invention concerne un dispositif électroluminescent à semi-conducteur comprenant : une pluralité de couches semi-conductrices dans lesquelles une première couche semi-conductrice ayant une première conductivité, une couche active générant de la lumière par recombinaison d'un électron et d'un trou, et une seconde couche semi-conductrice ayant une seconde conductivité différente de la première conductivité sont séquentiellement stratifiées; une couche réfléchissante disposée sur un côté de la pluralité de couches semi-conductrices et réfléchissant la lumière générée dans la couche active; une première électrode et une seconde électrode pour fournir un électron et un trou sur la couche réfléchissante et en communication électrique avec la pluralité de couches semi-conductrices; un substrat de croissance disposé sur un côté opposé à la couche réfléchissante par rapport à la pluralité de couches semi-conductrices; et une couche de guidage de lumière optique disposée sur un côté opposé au substrat de croissance sur lequel la pluralité de couches semi-conductrices sont formées, la couche de guidage de lumière optique étant constituée d'un matériau ayant le même indice de réfraction que celui du substrat de croissance.
PCT/KR2017/008101 2016-08-12 2017-07-27 Dispositif électroluminescent à semi-conducteurs Ceased WO2018030680A1 (fr)

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TWI717073B (zh) * 2019-09-26 2021-01-21 力成科技股份有限公司 具有圖樣壩層的晶片封裝結構

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