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WO2018028183A1 - 掩膜板和蒸镀装置 - Google Patents

掩膜板和蒸镀装置 Download PDF

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Publication number
WO2018028183A1
WO2018028183A1 PCT/CN2017/075341 CN2017075341W WO2018028183A1 WO 2018028183 A1 WO2018028183 A1 WO 2018028183A1 CN 2017075341 W CN2017075341 W CN 2017075341W WO 2018028183 A1 WO2018028183 A1 WO 2018028183A1
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WO
WIPO (PCT)
Prior art keywords
mask
frame
plane
strip
mask strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/075341
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English (en)
French (fr)
Inventor
徐鹏
乔永康
潘晟恺
刘杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Hefei Xinsheng Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to EP17767720.0A priority Critical patent/EP3498880B1/en
Priority to US15/561,716 priority patent/US10465277B2/en
Publication of WO2018028183A1 publication Critical patent/WO2018028183A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Definitions

  • Embodiments of the present invention relate to a mask and an evaporation apparatus.
  • the evaporation process is widely used in the coating process of electronic devices.
  • the principle is to place the substrate to be evaporated in a vacuum environment, and deposit the evaporation material on the surface of the substrate to be evaporated to complete the coating, while the evaporation is to be performed.
  • the coated area of the substrate is typically defined by a mask strip.
  • the problem of solving the problem that the edge of the substrate is easily scratched is mainly from two aspects, one is to effectively control the sharpness and roughness of the edge of the mask strip; the other is to slow the relative movement of the mask strip and the glass substrate, and weaken the two The interaction force.
  • the thickness of the mask strip is usually as thin as 100 um or thinner, so that the edges of the mask strip are inevitably sharp.
  • the mask strip is made by an etching process, and it is difficult to control the sharpness and roughness of the edge of the mask strip by adjusting the parameters of the etching process.
  • a masking plate includes a frame and a first mask strip disposed inside the frame, wherein the frame includes an outer frame and an inner frame, the outer frame being located on the outer side and having a first a plane, the inner frame being located on the inner side and having a second plane, the first plane being higher than the second plane thereby forming a step; the first mask strip being fixed to the outer frame by both ends and The inner frame extends along one side of the frame, and an orthographic projection of the first mask strip on the second plane at least partially overlaps the inner frame at the side.
  • a height difference between the first plane and the second plane is 1-10 mm.
  • a height difference between the first plane and the second plane is 5 mm.
  • the main portion of the first mask strip is in a direction perpendicular to the direction in which the first mask strip extends in the first plane
  • the distance from the outer frame is from 0.5 mm to 2 mm.
  • the mask further includes a second mask strip disposed inside the frame.
  • the second mask strip in the mask, is fixed to the outer frame by two ends and along the other side of the frame in the outer frame Extending, and an orthographic projection of the second mask strip on the second plane at least partially overlaps the inner frame on the other side.
  • the second mask strip and the first mask strip have intersecting regions.
  • the second mask strip is fixed on the outer frame by two ends and intersects with a middle portion of the first mask strip,
  • the area enclosed by the frame is divided into a plurality of sub-areas.
  • the first mask strip and the second mask strip have the same thickness.
  • the thickness of the first mask strip and the second mask strip are both 50-100 ⁇ m.
  • the vapor deposition apparatus includes the mask sheet described above.
  • the vapor deposition apparatus further includes a magnet disposed opposite to the mask, the first mask strip has magnetic properties, and the first mask strip is adsorbed by the magnet And move.
  • 1 is a schematic plan view showing a planar structure of a mask
  • FIG. 2 is a schematic plan view showing a mask structure according to an embodiment of the present invention.
  • FIG. 2a-2b are schematic cross-sectional views of the mask shown in Fig. 2;
  • FIG. 3 is a schematic plan view showing a mask structure according to an embodiment of the present invention.
  • Figure 3a is a schematic cross-sectional view of the mask shown in Figure 3;
  • FIG. 4 is a schematic plan view showing a structure of a frame according to an embodiment of the present invention.
  • FIG. 4a-4d are schematic cross-sectional views of the frame shown in Fig. 4;
  • Figure 5a is a schematic plan view of a mask plate
  • Fig. 5b is a schematic cross-sectional view showing the mask of Fig. 5a used in an evaporation apparatus.
  • the mask 100 includes a frame 101 and a mask strip 102 fixed to the frame 101.
  • the mask 100 comprises six mask strips 102, wherein four mask strips are attached to the periphery of the frame 101 and in direct contact with the frame, the four mask strips being in a plane in contact with the frame
  • the orthographic projection overlaps the frame, and the other two mask strips overlap the frame 101.
  • the inventors found in the study that the four mask strips fixed around the periphery of the frame 101 are the key factors causing the substrate to be scratched. Since the main portion of the peripheral mask strip is in direct contact with the frame 101, the peripheral mask strip is subjected to the magnet.
  • the flipping motion is limited, and the probability of the mask strip moving upward and scraping the glass substrate is increased, that is, the degree of freedom of the mask strip itself is limited, causing the mask strip and the glass substrate.
  • the interaction force increases, causing scratches on the glass substrate.
  • the freedom of the film strip itself can slow down the relative movement of the mask strip and the glass substrate to solve the problem of scratching the edge of the substrate.
  • the four mask strips in the periphery are formed in the same manner as the other two mask strips, and the scratch problem of the mask strip on the glass substrate is significantly improved. However, this will cause a film leakage phenomenon during vapor deposition, thereby reducing the yield of the product.
  • the present invention is designed to have two planes having different heights by changing the structure of the frame to thereby form a step, and then the first mask strip is overlapped on the outer frame of the frame to make the main portion thereof
  • the contact with the frame avoids the problem of scratching the glass substrate caused by the first mask strip, and effectively improves the yield and life of the subsequent products.
  • At least one embodiment of the present invention provides a mask comprising a frame and a first mask strip disposed inside the frame, the frame including an outer frame having a first plane on the outer side and being located on the inner side and having a second a planar inner frame, the first plane being higher than the second plane thereby forming a step; the first mask strip is fixed to the outer frame by both ends and extends along one side of the frame in the outer frame, and the first mask strip The orthographic projection on the second plane at least partially overlaps the inner frame at the sides.
  • FIG. 2 is a schematic plan view of a mask provided by an embodiment of the present invention
  • FIGS. 2a and 2b are schematic cross-sectional views of the mask shown in FIG.
  • the mask 100 includes a frame 101 and a first mask strip 1021 disposed inside the frame 101.
  • the frame 101 includes an outer frame 1011 and an inner frame 1012, and the outer frame 1011 is located outside. And having a first plane 103, the inner frame 1012 is located on the inner side and has a second plane 104.
  • the first plane 103 is higher than the second plane 104 with respect to the bottom surface of the frame 101, thereby forming a step 105, and the first mask strip 1021 passes through two The end is fixed to the outer frame 1011 and extends along one side of the frame 101 in the outer frame 1011.
  • the orthographic projection of the first mask strip 1021 on the second plane 104 and the inner frame 1012 have a partial overlap region on the side.
  • two first mask strips 1021 are disposed in the longitudinal direction, respectively located on the left and right sides of the frame 101, and each of the first mask strips 1021 is respectively fixed to the outer frame 1011 through two ends, and Located in the outer frame of the frame 101 on the left and right sides respectively (ie, the body portion except the end portion is located in the outer frame), whereby the orthographic projection of the first mask strip 1021 on the second plane 104 and the outer frame 1011 There are no overlapping areas.
  • the end portion of the first mask strip 1021 may be fixed by welding or riveting or the like.
  • the inner frame 1012 and the outer frame 1011 are integrally formed, and after forming the frame body, the side of the outer frame near the defined area is etched away to a certain thickness to thereby form a step 105 having a first plane 103 and a second plane 104. And the first plane 103 is higher than the second plane 104.
  • frame 101 It can be formed by stamping once.
  • the inner frame 1012 and the outer frame 1011 are respectively formed and then joined (for example, welded) to include the entirety of the first plane 103 and the second plane 104, and the first plane 103 is formed higher than the second plane 104. Step 105.
  • the cross-sectional view along A-A1 in FIG. 2 is also different.
  • the hatching line A-A1 is located at the center line of the first mask strip 1021.
  • the portions of the ends of the first mask strip 1021 are positive on the second plane 104.
  • the projection and inner frame 1012 have a partially overlapping region on the side, i.e., the orthographic projection of the end of the first mask strip 1021 on the second plane 104 overlaps the inner frame 1012 on the side.
  • the orthographic projection and inner frame 1012 have overlapping regions at the sides.
  • the first mask strip 1021 is overlapped on the outer frame 1011, and is erected over the inner frame 1012 and the step 105, in a direction perpendicular to the direction in which the first mask strip 1021 extends.
  • a portion of the orthographic projection of a mask strip 1021 on the second plane 104 overlaps the inner frame 1012 on the side and the other portion falls within the area defined by the inner frame 1012.
  • the height difference h between the first plane 103 and the second plane 104 is 1-10 mm.
  • the height difference h between the first plane 103 and the second plane 104 is 5 mm. In such a range of height difference, when the first mask strip 1021 is subjected to external force, the main portion thereof is not in contact with the inner frame, and the degree of freedom thereof is not limited.
  • the distance L between the main portion of the first mask strip 1021 and the outer frame 1011 is 0.5 mm on the first plane 103 and perpendicular to the direction in which the first mask strip 1021 extends.
  • L is 1 mm.
  • L does not cause a problem that the degree of scratching of the glass substrate increases due to contact with the outer frame 1011 when the first mask strip 1021 is subjected to an external force.
  • the first mask strip 1021 is fixed to the outer frame by welding, and the manner of welding includes spot welding or the like.
  • the mask 100 may further include a second mask strip 1022 disposed inside the frame 101.
  • the second mask strip 1022 is fixed to the outer frame 1011 and extends along the other side of the frame 101 within the outer frame 1011. Similar to the first mask strip 1021 as described above, the orthographic projection of the second mask strip 1022 on the second plane 104 and the inner frame 1012 on the other side are at least partially
  • the sub-overlaps, for example, the partial overlap herein includes an orthogonal projection of the end of the second mask strip 1022 on the second plane 104 and an overlap of the inner frame 1012 on the other side and a second mask strip 1022
  • the orthographic projection of the body portion on the second plane 104 overlaps the inner frame 1012 on the other side.
  • two second mask strips 1022 are laterally disposed on the upper side and the lower side of the frame 101, respectively, and each of the second mask strips 1022 is respectively fixed to the outer frame 1011 through two end portions, and respectively located at
  • the frame 101 is in the outer frame of the upper and lower sides (i.e., the body portion other than the end portion is located in the outer frame), whereby the orthographic projection of the second mask strip 1022 on the second plane 104 does not intersect the outer frame 1011. Stacked area.
  • the end of the second mask strip 1022 can be fixed by welding or riveting or the like.
  • second mask strips 1022 are further included in the middle of the frame 101.
  • the second mask strips 1022 are fixed to the outer frame 1011 by two ends and are associated with the first mask strip.
  • the middle portion of 1021 intersects, thereby dividing the area surrounded by the frame 101 into a plurality of sub-areas.
  • the size of the sub-regions formed here may be the same or different depending on actual needs.
  • a plurality of first mask strips 1021 may be fixed on the outer frame to divide the area surrounded by the frame 101 in FIG. 2 into more sub-areas.
  • the second mask strip 1022 has an intersection area with the first mask strip 1021.
  • the thickness at the intersection region is the sum of the thicknesses of the second mask strip 1022 and the first mask strip 1021, that is, the second mask strip 1022 and the first mask strip 1021 are in contact with each other.
  • the first mask strip 1021 and the second mask strip 1022 are equal in thickness, and the first mask strip 1021 and the second mask strip 1022 are etched off half in the intersection region, respectively.
  • the thickness, the thickness at the intersection region is the thickness of one mask strip, so that when the first mask strip 1021 and the second mask strip 1022 are in close contact with the substrate to be evaporated, the substrate is not caused by the unevenness at the intersection region.
  • the problem of uneven vapor deposition film is the thickness of one mask strip, so that when the first mask strip 1021 and the second mask strip 1022 are in close contact with the substrate to be evaporated, the substrate is not caused by the unevenness at the intersection region. The problem of uneven vapor deposition film.
  • the thickness of the first mask strip 1021 and the second mask strip 1022 are both 50-100 ⁇ m, such as 50 ⁇ m, 75 ⁇ m, 100 ⁇ m, and the like.
  • first mask strips 1021 and the second mask strips 1022 shown in FIGS. 2 and 3 is merely exemplary, and is obviously not limited to that shown in FIG. 2. If desired, a plurality of first mask strips 1021 may be disposed in a defined area of the frame, or a plurality of second mask strips 1022 may be disposed to form a desired size of the film forming area, for example, laterally of the frame. Other first mask strips 1021 are disposed in the middle.
  • FIGS. 4a-4d are schematic cross-sectional structures of the frame shown in FIG. 4, as shown in FIG. 4a, the orthographic projection of the inner frame on the first plane Docking with one side of the outer frame, or as shown in Figures 4b and 4c, the orthographic projection of the inner frame on the first plane at least partially overlaps one side of the outer frame, or as shown in Figure 4d, the inner frame
  • the side opposite to the second plane is disposed in a ramp shape, which is more advantageous for uniformly coating the vapor deposition material in the edge region during the evaporation process.
  • An embodiment of the present invention also provides an evaporation apparatus comprising the mask of the first embodiment.
  • FIG. 5a is a schematic plan view of a mask plate
  • FIG. 5b is a schematic cross-sectional view of the mask plate of FIG. 5a used in an evaporation device.
  • the cross-section of the mask plate in FIG. 5b is a figure. D-D1 line cutting in 5a.
  • the vapor deposition apparatus further includes a magnet 201 disposed opposite the mask.
  • the magnet and the mask 100 are respectively located on both sides of the glass substrate 202 to be evaporated.
  • the first mask strip 1021 is made of a material having magnetic properties, such as Fe, Ni or an alloy material formed by the two, and the first mask strip is caused by the magnetic attraction of the magnet 201 to the first mask strip. Adhere to the glass substrate to be evaporated.
  • the second mask strip is also magnetic, and the second mask strip is fixed on the outer frame by both ends, and a plurality of second mask strips may be disposed, and the second mask strip may intersect the middle of the first mask strip. Dividing the area surrounded by the frame into a plurality of sub-areas, and magnetically attracting the first mask strip and the second mask strip by the magnet to make the two adhere to the glass substrate to be evaporated, thereby forming a plurality of film forming regions .
  • the mask plate and the vapor deposition device provided by the embodiments of the present invention have the following beneficial effects: they are designed to have two planes having different heights by changing the structure of the frame to thereby form a step, and then the first mask strip is overlapped On the frame, the two ends are fixed on the outer frame, and the main body portion is not in contact with the frame, thereby avoiding the problem of scratching of the first mask strip to the glass substrate, thereby effectively improving the yield and life of the subsequent product. .

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Abstract

一种掩膜板(100)和蒸镀装置，掩膜板(100)包括框架(101)和设置在框架(101)内侧的第一掩膜条(1021)，框架(101)包括外框(1011)和内框(1012)，外框(1011)位于外侧且具有第一平面(103)，内框(1012)位于内侧且具有第二平面(104)，第一平面(103)高于第二平面(104)由此形成台阶(105)；第一掩膜条(1021)通过两端固定在外框(1011)上且在外框(1011)内沿框架(101)的一侧边延伸，第一掩膜条(1021)在第二平面(104)上的正投影与内框(1012)在侧边至少部分交叠。掩膜板（100）通过改变框架(101)和固定在其上的掩膜条（1021，1022）的设计，有效解决了玻璃基板被刮伤的问题，有效提升了后续产品的良率和寿命。

Description

掩膜板和蒸镀装置 技术领域
本发明的实施例涉及一种掩膜板和蒸镀装置。
背景技术
蒸镀工艺被广泛地应用于电子器件的镀膜过程中，其原理是将待蒸镀的基板放置于真空环境中，使蒸镀材料沉积在待蒸镀的基板表面而完成镀膜，而待蒸镀基板的镀膜区域通常通过掩膜条来限定。
在蒸镀工艺中，如果基板边缘被刮伤易造成周边线路断路、封装失效等问题，从而影响产品良率和产品寿命。基板边缘的刮伤通常是掩膜条与玻璃基板接触时的相对运动引起的。
目前，解决上述基板边缘易被刮伤的问题主要从两个方面入手，一是有效控制掩膜条边缘的锋利程度和粗糙度；二是减缓掩膜条与玻璃基板的相对运动，减弱二者的相互作用力。但是，为了确保掩膜条与玻璃基板接触时的平整度要求，掩膜条的厚度通常薄至100um或者更薄，这样不可避免的掩膜条的边缘会很锋利。而掩膜条是通过刻蚀工艺制成的，通过调整刻蚀工艺的参数来控制掩膜条边缘的锋利程度和粗糙度的难度很大。
发明内容
在本发明至少一个实施例中，掩膜板包括框架和设置在所述框架内侧的第一掩膜条，其中，所述框架包括外框和内框，所述外框位于外侧且具有第一平面，所述内框位于内侧且具有第二平面，所述第一平面高于所述第二平面由此形成台阶；所述第一掩膜条通过两端固定在所述外框上且在所述外框内沿所述框架的一侧边延伸，且所述第一掩膜条在所述第二平面上的正投影与所述内框在所述侧边至少部分交叠。
例如，在本发明一实施例中，在该掩膜板中，所述第一平面和所述第二平面之间的高度差为1-10mm。
例如，在本发明一实施例中，在该掩膜板中，所述第一平面和所述第二平面之间的高度差为5mm。
例如，在本发明一实施例中，在该掩膜板中，在所述第一平面上且与所述第一掩膜条延伸方向垂直的方向上，所述第一掩膜条的主体部分与所述外框之间的距离为0.5mm-2mm。
例如，在本发明一实施例中，在该掩膜板中，还包括设置在所述框架内侧的第二掩膜条。
例如，在本发明一实施例中，在该掩膜板中，所述第二掩膜条通过两端固定在所述外框上且在所述外框内沿所述框架的另一侧边延伸，且所述第二掩膜条在所述第二平面上的正投影与所述内框在所述另一侧边至少部分交叠。
例如，在本发明一实施例中，在该掩膜板中，所述第二掩膜条与所述第一掩膜条具有交叉区域。
例如，在本发明一实施例中，在该掩膜板中，所述第二掩膜条通过两端固定在所述外框上且与所述第一掩膜条的中部交叉，将所述框架所包围的区域划分为多个子区域。
例如，在本发明一实施例中，在该掩膜板中，所述第一掩膜条和所述第二掩膜条的厚度相等。
例如，在本发明一实施例中，在该掩膜板中，所述第一掩膜条和所述第二掩膜条的厚度均为50-100μm。
本发明至少一个实施例中，该蒸镀装置包括上述中的掩膜板。
例如，在本发明一实施例中，该蒸镀装置还包括与所述掩膜板相对设置的磁体，所述第一掩膜条具有磁性，所述第一掩膜条可被所述磁体吸附而移动。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为一种掩膜板的平面结构示意图；
图2为本发明实施例提供的掩膜板的平面结构示意图；
图2a-2b为图2中所示掩膜板的截面结构示意图；
图3为本发明实施例提供的掩膜板的平面结构示意图；
图3a为图3中所示掩膜板的截面结构示意图；
图4为本发明实施例提供的框架的平面结构示意图；
图4a-4d为图4中所示框架的截面结构示意图；
图5a为一种掩膜板的平面结构示意图；
图5b为将图5a中的掩膜板用于蒸镀装置中的截面结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
图1为一种掩膜板的平面结构示意图，如图1所示，该掩膜板100包括框架101和固定在框架101上的掩膜条102。从图1中可以看出，该掩膜板100包括六条掩膜条102，其中四条掩膜条固定在框架101的周边并与框架直接接触，该四条掩膜条在与框架接触的平面上的正投影与该框架交叠，另外两条掩膜条搭接在框架101上。发明人在研究中发现：固定在框架101周边的四条掩膜条是造成基板被刮伤的关键因素，由于周边的掩膜条的主体部分与框架101直接接触，周边的掩膜条在受到磁体的磁力吸引作用力时，其翻转运动会受到限制，会造成掩膜条向上运动与玻璃基板刮擦的几率增大，即掩膜条自身的自由度会受到很多限制，造成掩膜条与玻璃基板的相互作用力增加，从而造成对玻璃基板的刮伤。如果从增强掩 膜条自身的自由度入手，可减缓掩膜条与玻璃基板的相对运动来解决基板边缘被刮伤问题。例如，将周边的四条掩膜条与另外两条掩膜条一样制作成与框架搭接的形式，掩膜条对玻璃基板的刮伤问题会得到明显的改善。但这样又会造成蒸镀时的漏膜现象，从而降低了产品的良率。针对上述问题，本发明的通过改变框架的结构将其设计成具有不同高度的两个平面由此形成台阶，然后将该第一掩膜条搭接在该框架的外框上，使其主体部分与框架不接触，避免了第一掩膜条给玻璃基板带来的刮伤的问题，有效提升了后续产品的良率和寿命。
本发明至少一实施例提供一种掩膜板，该掩膜板包括框架和设置在框架内侧的第一掩膜条，框架包括位于外侧且具有第一平面的外框和位于内侧且具有第二平面的内框，第一平面高于第二平面由此形成台阶；第一掩膜条通过两端固定在外框上且在该外框内沿框架的一侧边延伸，且第一掩膜条在第二平面上的正投影与内框在侧边至少部分交叠。
本发明的实施例提供一种掩膜板，图2为本发明的实施例提供的掩膜板的平面结构示意图，图2a和图2b为图2中所示掩膜板的截面结构示意图。
如图2和图2a、图2b所示，该掩膜板100包括框架101和设置在框架101内侧的第一掩膜条1021，框架101包括外框1011和内框1012，外框1011位于外侧且具有第一平面103，内框1012位于内侧且具有第二平面104，相对于该框架101的底面第一平面103高于第二平面104由此形成台阶105，第一掩膜条1021通过两端固定在外框1011上且在外框1011内沿框架101的一侧边延伸，第一掩膜条1021在第二平面104上的正投影与内框1012在侧边有部分交叠区域。在图2中，在纵向设置了两条第一掩膜条1021，分别位于框架101的左侧和右侧，每一第一掩膜条1021分别通过两个端部固定在外框1011上，且分别位于框架101在左侧和右侧的外框内(即除端部外的主体部分位于外框内)，由此第一掩膜条1021在第二平面104上的正投影与外框1011没有交叠区域。该第一掩膜条1021的端部的固定方式可以为焊接或铆接等。
例如，内框1012和外框1011一体成型，形成框架本体后再将外框靠近其限定区域的一侧刻蚀掉一定的厚度由此形成具有第一平面103和第二平面104的台阶105，且第一平面103高于第二平面104。或者，框架101 可以通过冲压一次成型。亦或者，内框1012和外框1011分别成型后再将二者连接(例如焊接)成包含第一平面103和第二平面104的整体，且第一平面103高于第二平面104由此形成台阶105。
例如，根据第一掩膜条1021在第二平面104上的正投影与内框1012在侧边交叠区域大小的不同，沿图2中的A-A1的截面图也不同。需要注意的是，剖面线A-A1位于第一掩膜条1021的中心线。例如，如图2a所示，当第一掩膜条1021与内框1012的交叠区域较小而没有超出其中心线时，第一掩膜条1021两端的部分在第二平面104上的正投影与内框1012在该侧边有部分交叠区域，即第一掩膜条1021的端部在第二平面104上的正投影与内框1012在该侧边有交叠。如图2b所示，当第一掩膜条1021与内框1012的交叠区域较大从而超出其中心线时，第一掩膜条1021的主体部分和两端部分在第二平面104上的正投影与内框1012在侧边处均有交叠区域。结合图2a和图2b可以看出，第一掩膜条1021搭接在外框1011上，架设在内框1012和台阶105之上，在垂直于第一掩膜条1021延伸方向的方向上，第一掩膜条1021在第二平面104上的正投影的一部分与内框1012在侧边交叠，另一部分落在内框1012限定的区域内。
例如，如图2a或2b所示，第一平面103和第二平面104之间的高度差h为1-10mm。示例性地，第一平面103和第二平面104之间的高度差h为5mm。在这样的高度差范围内，当第一掩膜条1021受到外界作用力运动时，其主体部分不与内框接触，其自由度不会受到限制。
例如，如图2所示，在第一平面103上且与第一掩膜条1021延伸方向垂直的方向上，第一掩膜条1021的主体部分与外框1011之间的距离L为0.5mm-2mm，示例性地，L为1mm。L在上述范围内不会因为第一掩膜条1021受到外界的作用力时与外框1011接触而造成对玻璃基板的刮伤程度增大的问题。
例如，第一掩膜条1021通过焊接的方式固定在外框上，该焊接的方式包括点焊等。
例如，如图2所示，该掩膜板100还可以包括设置在框架101内侧的第二掩膜条1022。该第二掩膜条1022固定在外框1011上且在外框1011内沿框架101的另一侧边延伸。与如上所述的第一掩膜条1021类似地，第二掩膜条1022在第二平面104上的正投影与内框1012在另一侧边至少部 分交叠，例如，此处的部分交叠包括第二掩膜条1022的端部在第二平面104上的正投影与内框1012在另一侧边的交叠和第二掩膜条1022的主体部分在第二平面104上的正投影与内框1012在另一侧边的交叠。
在图2中，分别在框架101的上侧和下侧横向设置了两条第二掩膜条1022，每条第二掩膜条1022分别通过两个端部固定在外框1011上，且分别位于框架101在上侧和下侧的外框内(即除端部外的主体部分位于外框内)，由此第二掩膜条1022在第二平面104上的正投影与外框1011没有交叠区域。该第二掩膜条1022的端部的固定方式可以为焊接或铆接等。
例如，如图2所示，在框架101的中部还包括其他横向延伸的第二掩膜条1022，这些第二掩膜条1022通过两个端部固定在外框1011上且与第一掩膜条1021的中部交叉，由此将框架101所包围的区域划分为多个子区域。根据实际需要，此处形成的子区域的大小可以相同，也可以不相同。例如，还可以在外框上固定多个第一掩膜条1021，将图2中框架101所包围的区域划分为更多的子区域。
例如，如图2所示，第二掩膜条1022与第一掩膜条1021具有交叉区域。交叉区域处的厚度为第二掩膜条1022与第一掩膜条1021的厚度之和，即第二掩膜条1022与第一掩膜条1021彼此接触。
例如，如图3和图3a所示，第一掩膜条1021和第二掩膜条1022的厚度相等，在交叉区域第一掩膜条1021和第二掩膜条1022分别被刻蚀掉一半的厚度，交叉区域处的厚度为一个掩膜条的厚度，由此当第一掩膜条1021和第二掩膜条1022紧贴待蒸镀的基板时不会因为交叉区域处不平整造成基板上蒸镀膜不均匀的问题。
例如，第一掩膜条1021和第二掩膜条1022的厚度均为50-100μm，例如50μm、75μm、100μm等。
需要说明的是，图2和图3中示出的第一掩膜条1021和第二掩膜条1022的条数只是示例性的，很显然并不限于图2中所示。根据需要，还可以在框架的限定区域内设置多个第一掩膜条1021，或者设置多个第二掩膜条1022，以形成所需的成膜区域的大小，例如还可以在框架横向的中部设置其他第一掩膜条1021。
图4为本发明实施例提供的框架的平面结构示意图，图4a-4d为图4中所示框架的截面结构示意图，如图4a所示，内框在第一平面上的正投影 与外框的一侧边对接，或者如图4b和4c所示,内框在第一平面上的正投影与外框的一侧边至少部分重叠，再或者如图4d所示，内框的与第二平面相对的一面设置成斜坡状，这样在蒸镀过程中更利于在边沿区域的均匀涂覆蒸镀材料。
本发明的实施例还提供一种蒸镀装置，该蒸镀装置包括实施例一中的掩膜板。
例如，图5a为一种掩膜板的平面结构示意图，图5b为将图5a中的掩膜板用于蒸镀装置中的截面结构示意图，例如，图5b中掩膜板的截面是从图5a中D-D1线切割。
例如，图5b所示，该蒸镀装置还包括与所述掩膜板相对设置的磁体201。此时磁体和掩膜板100分别位于待蒸镀的玻璃基板202的两侧。在此情形，第一掩膜条1021由具有磁性的材料制成，例如Fe、Ni或者二者形成的合金材料，通过磁体201对第一掩膜条的磁力吸引作用而让第一掩膜条紧贴待蒸镀的玻璃基板。
例如，第二掩膜条也具有磁性，第二掩膜条通过两端固定在外框上，还可以设置多个第二掩膜条，第二掩膜条可以与第一掩膜条的中部交叉，将框架所包围的区域划分为多个子区域，通过磁体对第一掩膜条和第二掩膜条的磁力吸引作用让二者紧贴待蒸镀的玻璃基板，从而形成多个成膜区。
本发明的实施例提供的掩膜板和蒸镀装置具有以下有益效果：通过改变框架的结构将其设计成具有不同高度的两个平面由此形成台阶，然后将该第一掩膜条搭接在该框架上，使其两端固定在外框上，而主体部分与框架不接触，避免了第一掩膜条给玻璃基板带来的刮伤的问题，有效提升了后续产品的良率和寿命。
有以下几点需要说明：
(1)本发明实施例附图只涉及到本发明实施例涉及到的结构，其他结构可参考通常设计。
(2)为了清晰起见，在用于描述本发明的实施例的附图中，层或区域的厚度被放大或缩小，即这些附图并非按照实际的比例绘制。可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
(3)在不冲突的情况下，本发明的实施例及实施例中的特征可以 相互组合以得到新的实施例。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，本发明的保护范围应以所述权利要求的保护范围为准。
本申请要求于2016年8月8日递交的中国专利申请第201620851904.X号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (12)

  1. 一种掩膜板，包括框架和设置在所述框架内侧的第一掩膜条，其中，
    所述框架包括外框和内框，所述外框位于外侧且具有第一平面，所述内框位于内侧且具有第二平面，所述第一平面高于所述第二平面由此形成台阶；
    所述第一掩膜条通过两端固定在所述外框上且在所述外框内沿所述框架的一侧边延伸，所述第一掩膜条在所述第二平面上的正投影与所述内框在所述侧边至少部分交叠。
  2. 根据权利要求1所述的掩膜板，其中，所述第一平面和所述第二平面之间的高度差为1-10mm。
  3. 根据权利要求2所述的掩膜板，其中，所述第一平面和所述第二平面之间的高度差为5mm。
  4. 根据权利要求1所述的掩膜板，其中，在所述第一平面上且与所述第一掩膜条延伸方向垂直的方向上，所述第一掩膜条的主体部分与所述外框之间的距离为0.5mm-2mm。
  5. 根据权利要求1-4中任一项所述的掩膜板，还包括设置在所述框架内侧的第二掩膜条。
  6. 根据权利要求5所述的掩膜板，其中，所述第二掩膜条通过两端固定在所述外框上且在所述外框内沿所述框架的另一侧边延伸，且所述第二掩膜条在所述第二平面上的正投影与所述内框在所述另一侧边至少部分交叠。
  7. 根据权利要求5所述的掩膜板，其中，所述第二掩膜条与所述第一掩膜条具有交叉区域。
  8. 根据权利要求7所述的掩膜板，其中，所述第二掩膜条通过两端固定在所述外框上且与所述第一掩膜条的中部交叉，将所述框架所包围的区域划分为多个子区域。
  9. 根据权利要求7或8所述的掩膜板，其中，所述第一掩膜条和所述第二掩膜条的厚度相等。
  10. 根据权利要求6-8中任一项所述的掩膜板，其中，所述第一掩膜 条和所述第二掩膜条的厚度均为50-100μm。
  11. 一种蒸镀装置，包括权利要求1-10中任一项所述的掩膜板。
  12. 如权利要求11所述的蒸镀装置，还包括与所述掩膜板相对设置的磁体，其中，所述第一掩膜条具有磁性，所述第一掩膜条可被所述磁体吸附而移动。
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CN205856592U (zh) 2017-01-04

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