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WO2018026156A1 - Filtre optique, dispositif optique et procédé de production de système optique - Google Patents

Filtre optique, dispositif optique et procédé de production de système optique Download PDF

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Publication number
WO2018026156A1
WO2018026156A1 PCT/KR2017/008259 KR2017008259W WO2018026156A1 WO 2018026156 A1 WO2018026156 A1 WO 2018026156A1 KR 2017008259 W KR2017008259 W KR 2017008259W WO 2018026156 A1 WO2018026156 A1 WO 2018026156A1
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WO
WIPO (PCT)
Prior art keywords
filter
layer
optical
refractive index
region
Prior art date
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Ceased
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PCT/KR2017/008259
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English (en)
Korean (ko)
Inventor
황규원
이경석
김원목
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority claimed from KR1020170053893A external-priority patent/KR102294845B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority to CN201780048831.8A priority Critical patent/CN109564310A/zh
Priority to US16/069,612 priority patent/US11156752B2/en
Publication of WO2018026156A1 publication Critical patent/WO2018026156A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02—Optical fibres with cladding with or without a coating

Definitions

  • the present invention relates to an optical filter, and more particularly, to an optical filter, an optical device, and a method of manufacturing an optical filter that constitute a unit filter using a plurality of metal nanostructures.
  • An optical filter is a configuration necessary for filtering light having various wavelengths into an arbitrary wavelength band.
  • Linear variable filters are known as optical filters.
  • the linear variable filter is an optical filter of a Fabry-Perot resonator structure, and has a structure in which the thickness of the dielectric resonant layer varies linearly in the longitudinal direction.
  • a lower mirror layer and an upper mirror layer are positioned with a dielectric resonance layer interposed therebetween.
  • Such a linear variable filter has a limitation in process reproducibility due to the linear structure whose thickness varies in the longitudinal direction.
  • the resolution of a spectrometer using a linear variable filter is determined by the height-to-length ratio of the linear variable filter, it is difficult to miniaturize the spectrometer element.
  • the linear structure is disadvantageous in terms of productivity due to the lack of process compatibility with the two-dimensional imaging sensor technology.
  • the distance between the filter and the array of photodetectors existed because the transmission spectra of each type variable filter consisted of continuous spectral superposition and the integration between the linear variable filter and the photodetector was not monolithic. Due to the stray light effect, there was a disadvantage that the filter performance is reduced.
  • US Patent Publication No. 2014/0061486 discloses a spectrometer using quantum dots
  • US Patent Publication No. 2015/0350540 discloses an image sensor implementing color filters using nanoparticles.
  • an object of the present invention in manufacturing an optical filter having a variety of wavelength bands, by changing the resonance wavelength of the metal nanostructure by using a medium having a different refractive index, by using the same metal nanostructure
  • another object of the present invention is to manufacture an optical filter having a high resolution.
  • the center wavelength of the transmission or blocking spectrum by the plasmonic resonance of the metal nanostructure must be finely controlled, but fine adjustment is not easy by only controlling the metal type, shape, and size of the metal nanostructure.
  • finer adjustment is possible, and various filters can be designed to have high resolution.
  • a first aspect of the present invention provides an optical filter comprising: a first filter region including a first layer having a first refractive index and a plurality of first metal nanostructures inside the first layer; And a second filter region including a second layer having a second refractive index and a plurality of second metal nanostructures in the second layer, wherein the first filter region and the second filter region transmit or block light.
  • the wavelengths are different.
  • an optical filter having a first refractive index and a second refractive index different from each other and having the same shape and material as that of the first metal nanostructure and the second metal nanostructure.
  • an optical filter having different shapes or materials of the first metal nanostructure and the second metal nanostructure is provided.
  • the first layer and the second layer may change the concentration of the added constituents or different constituents added to the same material in order to make the refractive index different from each other.
  • the first filter region and / or the second filter region is preferably a form in which a plurality of metal nanostructures are embedded in the dielectric material, it is also possible to form a dielectric material applied on the metal nanostructure.
  • first metal nanostructure and the second metal nanostructure have the same shape or different shapes from each other. It is also possible for the constituent materials to be the same or different from each other.
  • the optical filter of the present invention is formed with two-dimensional filter regions in a planar manner, for example, if one direction is defined as a horizontal axis and the other direction as a vertical axis, different metal nanostructures are arranged in the horizontal axis, and the vertical axis As a result, it is possible to form a checker board by applying media having different refractive indices.
  • optical filter an optical device having a photodetector corresponding to each of the first filter region and the second filter region.
  • the optical device may be any one of a spectroscope, a CMOS image sensor, and a hyperspectral image sensor.
  • Another aspect of the present invention is to provide an optical filter module having a transparent substrate and the optical filter described above.
  • Another aspect of the present invention provides a method of manufacturing a flat optical filter, comprising the steps of: preparing a structure; Forming a first filter region on the structure, the first filter region including a first layer having a first refractive index and a plurality of first metal nanostructures inside the first layer; And forming a second filter region on the structure, the second filter region including a second layer having a second refractive index and a plurality of second metal nanostructures inside the second layer, wherein the first refractive index and the second refractive index are formed.
  • the forming of the first filter region may be performed by selectively applying a plurality of first metal nanostructures to a solution having a first refractive index, and the forming of the second filter region may be performed on a solution having a second refractive index.
  • a plurality of second metal nanostructures may be mixed and selectively applied.
  • the metal nanostructure may be selectively applied first, and then a medium having a different refractive index may be selectively applied later.
  • the forming of the first filter region may include forming and forming a layer by mixing and applying a plurality of first metal nanostructures to a solution having a first refractive index and remaining in the first filter region using a photolithography process.
  • the forming of the second filter region may be performed by mixing and applying a plurality of second metal nanostructures to a solution having a second refractive index to form a layer and remaining in the second filter region using a photolithography process.
  • a color filter layer for filtering incident light with at least R, G, B, a spectral filter array for measuring the spectrum of the object, the color filter layer and the spectroscopy
  • An optical device including a plurality of light detection regions for detecting an optical signal transmitted through a filter array is provided.
  • the spectroscopic filter array may include a diffraction grating filter, a prism filter, a Fabry-Perot type resonance filter, a plasmonic filter including a metal nanostructure array or a metal nanohole array, a silicon nanowire based filter, an absorption filter, A resonant waveguide resonant mode type filter or an array filter using an optical interference type spectral filter using integrated optics.
  • the spectral filter array may include all of the optical filters according to the first aspect of the present invention.
  • each of the photodetection pixels of the photodetection regions has the same area to which an optical signal is incident.
  • the unit spectroscopic filters of the spectral filter array are arranged at regular intervals between the color filter layers.
  • the photodetection areas are comprised of photodetection pixels of a CMOS image sensor.
  • the size of the photodetecting pixels of the photodetection regions corresponding to the color filter is different from the size of the photodetection pixels of the photodetection regions corresponding to the spectral filter.
  • n optical filters can be manufactured with n types of metal nanostructures.
  • n X m optical filters can be manufactured using a medium of different types of metal nanostructures and m types of different refractive indices. .
  • 1 and 2 are a plan view and a cross-sectional view of an optical filter according to an embodiment of the present invention.
  • FIG 3 is a cross-sectional view of an optical filter according to another exemplary embodiment of the present invention.
  • FIG. 4 is a conceptual diagram for describing an operation of an optical filter according to an exemplary embodiment of the present invention.
  • FIG. 5 is a diagram illustrating an example of metal nanostructures according to an embodiment of the present invention.
  • FIG 6 and 7 illustrate an optical device according to an embodiment of the present invention.
  • 12 to 15 are graphs showing simulation results of a filter according to a change in size and a refractive index of a medium of a metal nanostructure manufactured according to an embodiment of the present invention.
  • 16 and 17 are graphs showing simulation results of a filter in which a material type of a metal nanostructure manufactured according to an embodiment of the present invention is changed.
  • FIG. 18 is a plan view illustrating a method of manufacturing an optical filter according to another exemplary embodiment of the present invention.
  • 19 to 21 are flowcharts of an example of manufacturing an optical filter according to an exemplary embodiment of the present invention of FIG. 18.
  • 22 to 24 are flowcharts of an example of manufacturing an optical filter according to another exemplary embodiment of the present invention of FIG. 18.
  • 25 is a conceptual diagram of a one-dimensional spectrometer according to an embodiment of the present invention.
  • 26 is a conceptual diagram of a two-dimensional spectrometer according to an embodiment of the present invention.
  • 27 and 28 are conceptual views of image sensors according to an exemplary embodiment of the present invention.
  • 29 to 35 are diagrams for describing a situation of integration with an image sensor and a spectroscopic sensor according to an embodiment of the present invention.
  • 36 is a conceptual diagram of a hyper spectral image sensor according to an embodiment of the present invention.
  • 1 and 2 are a plan view and a cross-sectional view of an optical filter according to an embodiment of the present invention.
  • the optical filter 1 includes a plurality of filter regions. In FIG. 1, nine are shown as an example, but the number thereof is not particularly limited and may be variously used. In this case, the at least two filter regions are configured to block (reflect, absorb, scatter) or pass light of different wavelengths.
  • the at least two filter regions are configured to block (reflect, absorb, scatter) or pass light of different wavelengths.
  • an example of two different filter regions will be described based on the first filter region 1201 and the second filter region 1202.
  • the optical filter 1 includes a first filter area 1201 and a second filter area 1202.
  • the first filter region 1201 includes a first layer 1201a having a first refractive index, and a plurality of first metal nanostructures 1201b inside the first layer 1201a, and the second filter region 1202.
  • the silver includes a second layer 1202a having a second refractive index and a plurality of second metal nanostructures 1202b inside the second layer 1202a.
  • the first filter region 1201 and the second filter region 1202 may be implemented in a form in which a plurality of metal nanostructures are embedded in the dielectric material.
  • ablation first and second refractive indices are configured to be different from each other, and the first metal nanostructure and the second metal nanostructure may be of the same kind, ii) the first and second refractive indices are the same, The first metal nanostructure and the second metal nanostructure may be configured differently. Iii) The first and second refractive indices may be different, and the first metal nanostructure and the second metal nanostructure may also be configured differently. .
  • Each of the filter regions 1201, 1202,..., 1209 may be fabricated on the structure 110.
  • the term “structure” refers to a lower support body on which the optical filter of the present invention may be manufactured.
  • the most common example may be a transparent substrate, a transparent film, or the like.
  • the present invention is not limited to any kind such as an optical device such as a CMOS image sensor, a structure including at least a part of a semiconductor material, a dielectric, and a metal.
  • the structure can have a flat plane in the form of a general substrate, it is also possible to pattern only the optical filter region in the form of a well. In this case, when the filter region is formed using the solution, accurate positioning and accurate size may be realized.
  • Metal nanostructures are not particularly limited metal nanoparticles (or structures), including nanospheres, nanorods, nanoplates, nanoplatelets, nanoparticles, nanotripods, nanotetrapods.
  • the materials may be fundamentally different materials having different refractive indices, or different materials may be added to the same material so that the refractive indices are different from each other.
  • the first layer and the second layer may be different polymer materials.
  • Examples include polymers and copolymers, including poly (dimethyl siloxane), polycarbonate, poly (vinyl phenyl sulfide), poly (methyl metharcylate) poly (vinyl alcohol), poly (vinyl butyral), poly (methyl acrylate) It is a high molecular material which is not specifically limited.
  • various dielectric materials are not particularly limited, including SiOx, Al 2 O 3 , ZnO, ZnSe.
  • the intrinsic absorption wavelength of the metal nanostructure by the LSP is determined by the dielectric constant of the metal, the dielectric constant of the medium, and the shape of the metal nanostructure.
  • the dielectric constant ( ⁇ ) of the material has a relationship between the refractive index (n) and the extinction coefficient ( ⁇ ) equation (1).
  • the dielectric constant (or refractive index) of a material is a function that changes with the wavelength of light, ⁇ .
  • Each has a maximum value at a wavelength ⁇ satisfying.
  • shape factor A i with l 1
  • a i may be defined in various ways depending on the shape.
  • the spheroid shape, the shape facter A x , A y , A z is obtained as follows for the rugby ball-shaped nanostructures whose diameters of the x, y and z axes are 2a, 2b and 2c.
  • the shape factors are each 1/3, so the same conditions as in the sphere )
  • FIG. 3 is a cross-sectional view of an optical filter according to another exemplary embodiment of the present invention. For convenience of explanation, the difference from FIG. 2 will be mainly described.
  • FIG. 3 is a structure in which a protective film 190 for protecting the filter areas 1201, 1202,..., 1209 is added.
  • the passivation layer 190 is preferably a material having excellent light permeability, a stable process, and a simple process.
  • oxide-based Al 2 O 3 , SiO x , ZnO, spin-on-glass (SOG), etc. may be used, such as polymer-based PMMA, PVA, PDMS, PC, and the like.
  • FIG. 4 is a conceptual diagram for describing an operation of an optical filter according to an exemplary embodiment of the present invention.
  • the filter regions 1204, 1205, and 1206 pass light having different wavelength bands.
  • the filter region 1204 transmits the light of ⁇ 1 among the light having the wavelength band of ⁇ 1 to ⁇ n
  • the filter area 1205 has the light of ⁇ 2 among the light having the wavelength band of ⁇ 1 to ⁇ n
  • the filter region 1206 transmits the light of ⁇ 3 among the light having a wavelength range of ⁇ 1 to ⁇ n .
  • the transmissive filter is shown in FIG. 3, it is also possible to implement a band-stop filter.
  • the metal nanostructures may include nanospheres, nanorods, nanoplates, nanoplatelets, nanodisks, nanoparticles, nanotripods, nanotetrapods, and the like. Meanwhile, the metal nanostructure and the second metal nanostructure of each filter region may have the same shape or different shapes.
  • FIG 6 and 7 illustrate an optical device according to an embodiment of the present invention.
  • the optical device includes filter areas 1204, 1205, and 1206 and photodetectors 1304, 1305, and 1306, respectively.
  • 6 illustrates a structure in which a structure 110, such as a transparent substrate, is inserted between the filter regions 1204, 1205, 1206 and the photodetectors 1304, 1305, 1306, and
  • FIG. 7 illustrates a structure 110, such as a transparent substrate.
  • the photodetectors perform a function of detecting light corresponding to a wavelength band from each filter region, and perform generally known functions such as changing the amount of light detected through various electric circuit parts, electrodes, and the like into an electric signal.
  • the optical filter of the present invention can be formed on the transparent substrate to be manufactured as a separate optical filter module (see Figs. 2 and 3).
  • the transparent substrate may be a flexible substrate such as glass or a polymer.
  • the light transmissive film is preferably composed of a transparent or semitransparent polymer having appropriate adhesive force and shock absorbency.
  • polystyrene PS
  • expandable polystyrene EPS
  • polyvinyl chloride PVC
  • styrene acrylonitrile copolymer SAN
  • polyurethane PU
  • PA Polyamide
  • PC Polycarbonate
  • Modified Polycarbonate Poly (vinyl butyral), Polyvinyl acetate, Acrylic It can be resin (Acrylic Resin), epoxy resin (EP: Epoxy Resin), silicone resin (Silicone Resin), unsaturated polyester (UP: Unsaturated Polyester), polyimide, polyethylene naphtalate, polyethylene terephtalate, etc. Can be used.
  • the optical filter module Since the optical filter module is manufactured in a form in which the photodetector is not integrated, the optical filter module may be attached to the photodetector in actual use or may be utilized in the form of attaching the optical filter module to the photodetector when manufacturing the finished product. When the optical filter module is actually used by being attached to the photodetector, for example, the optical filter module may be used by combining the optical filter module in front of the lens of the camera.
  • 8 to 11 are flowcharts of an example of manufacturing an optical filter according to an embodiment of the present invention.
  • a structure 110 such as a transparent substrate is prepared.
  • Each filter region is made of n X m mixed solution by mixing materials having different refractive indices such as polymer materials 1,2,3, ..., n with different metal nanostructures 1,2, ..., m.
  • the appropriate solvent if necessary.
  • Specific solvents include alcohols including methanol, ethanol, isopropyl alcohol, butanol, hydrocarbon solvents including hexane, heptane and octane, aromatic solvents including benzene and toluene, esters, acetone, DMSO, THF , TCE, or chloroform and the like.
  • filter regions are formed by administering the prepared mixed solutions to the upper surface of the structure by an inkjet method, respectively.
  • the wavelength bands of the filter regions are different from each other, polymer solutions having different refractive indices are used.
  • the type of the metal nanostructure may optionally be different.
  • the above-described method is represented by an inkjet method, but is not limited thereto. It is also possible to use a process for printing a mixed solution, an automated system (for example, an automatated pippeting system), and an array spotter. An advantage is that the array spotter can be used to fabricate a plurality of filter regions at once. Next, if necessary, it is also possible to go through the process of drying the above-mentioned mixed solution.
  • an inorganic thin film containing an oxide is used instead of a polymer.
  • a structure 110 such as a transparent substrate
  • a solution containing a metal nanostructure necessary at a predetermined position is administered to the filter region.
  • Each filter region may administer the same metal nanostructures or different metal nanostructures.
  • the desired inorganic thin film is deposited in the required position.
  • the inorganic thin film deposited on each filter region is implemented to have a different refractive index.
  • the type of the inorganic thin film is not particularly limited, at least one of HfO 2 , ZrO 2 , ZnO, ZnSe, TiO 2 , Al 2 O 3 , SiO x , SOG, and the like may be selected.
  • another optical filter of the present invention is formed with two-dimensional filter regions in a planar manner, when one direction is defined as the X axis and the direction substantially perpendicular to the X axis is defined as the Y axis is different from each other Metal nanostructures are arranged, and it is possible to form a checker board by applying media having different refractive indices on the Y-axis.
  • X and Y can be interchanged.
  • Such a configuration may be advantageous in process.
  • different metal nanostructures are arranged in a row in the X-axis direction, and then a medium having a different refractive index in a row in the Y-axis direction is applied.
  • each filter region can have a filter region that transmits wavelengths to each other, and the optical filter can be manufactured in a relatively small unit process, thereby bringing an advantageous effect on the process.
  • 12 to 15 are graphs showing simulation results of a filter manufactured according to an embodiment of the present invention.
  • the extinction coefficient of light according to the wavelength is shown.
  • the simulation results show that a total of 16 (4 x 4) types of filters can be produced using four media.
  • 16 and 17 are graphs showing simulation results of a filter using another material manufactured according to an embodiment of the present invention. 12 to 15, the material is changed from silver (Ag) to gold (Au), and the extinction coefficient of light according to the wavelength of the nanospheres having a size of 20 and 100 nm according to the change of the refractive index (n). It is shown.
  • FIG. 18 is a plan view illustrating a method of manufacturing an optical filter according to another exemplary embodiment of the present invention.
  • This manufacturing process uses a photolithography process. Using the photolithography process, the conventional semiconductor process can be applied, which eliminates the need for a separate device such as an inkjet device, and ensures low cost and high reliability.
  • first layers 2201, 2204, and 2207 having a first material and a first metal nanostructure are formed on the entire structure 310.
  • the first layers 2201, 2204, and 2207 manufactured by injecting a metal nanostructure into a polymer material having a first refractive index are coated on the entire upper surface of the structure by spin coating or the like.
  • only some of the filter regions leave the first layers 2201, 2204, and 2207 by using the photolithography method, and the first layer is removed in the remaining regions (see FIG. 19).
  • second layers 2202, 2205, and 2208 having a second material and a second metal nanostructure are formed on the entire structure 310. Then, only some of the filter regions leave the second layers 2202, 2205 and 2208 by using the photolithography method, and the second layers 2202, 2205 and 2208 are removed in the remaining regions (see FIG. 20).
  • third layers 2203, 2206, and 2209 having a third material and a third metal nanostructure are formed on the entire structure 310. Then, only some of the filter regions leave the third layers 2203, 2206 and 2209 by using the photolithography method, and the third layers 2203, 2206 and 2209 are removed from the remaining regions (see FIG. 21).
  • This method can be more effectively used when only three optical filters of R, G, and B are needed in the visible region.
  • 22 to 24 are flowcharts of an example of manufacturing an optical filter according to another exemplary embodiment of the present invention of FIG. 18. 22-24 illustrate the II-II ′ cross section of FIG. 18.
  • the 1st layer 2201, 2204, 2207, the 2nd layer 2202, 2205, 2208, and the 3rd layer 2203, 2206, 2209 are formed, respectively.
  • the refractive indices of the three filter regions of each of the y-directions may be configured differently.
  • the implantation of arbitrary ions into the medium causes the refractive index to change slightly.
  • the filter regions 2207, 2208, and 2209 of the first group in the y direction are opened using an ion implantation mask. And implants any amount of m 1 ions.
  • the filter regions 2204, 2205, and 2206 of the second group in the y direction are opened using an ion implantation mask. And implants any amount of m 2 ions.
  • the filter regions 2201, 2202, and 2203 of the third group in the y direction are opened using an ion implantation mask. And implants any amount of m 3 ions.
  • FIGS. 16 to 17 illustrate an example of manufacturing filter regions having nine different wavelength bands by using any of two different processes.
  • FIGS. 19 to 17. It is possible to implement nine different filter regions using the 21 process, or to implement nine different filter regions using the processes of FIGS. 22 to 24.
  • 25 is a conceptual diagram of a one-dimensional spectrometer according to an embodiment of the present invention.
  • a spectrometer 10000a including a filter array 1000a composed of M filter regions 100 and a photodetector 2000a composed of M optical detection units 500 is shown.
  • the period of each optical filter may be determined to match the period of the light detection unit 500 of the combined one-dimensional linear array photodetector or to match the size of the plurality of light detection unit 500 groups. That is, the coupling between the filter and the photodetector pixels can be 1: 1 or 1: multi coupling.
  • 26 is a conceptual diagram illustrating a two-dimensional spectrometer of the present invention.
  • An example is shown in which the spectrometer 10000b is configured through a two-dimensional coupling between the filter array 1000b and the photodetector 2000b.
  • the spectrometer 10000a of the one-dimensional coupling it is advantageous for integration, and it is advantageous for coupling with the conventional CMOS image sensor.
  • the spectrometers 10000a and 10000b allow the output of intensity information for light of a specific wavelength band where the center wavelength is moved little by little in one direction of the filter by passing the light.
  • 27 and 28 are conceptual views of image sensors according to an exemplary embodiment of the present invention.
  • 27 and 28 correspond to the fabrication structure of the CMOS image sensor of the FIS method and the BIS method, respectively.
  • Color filters such as R, G, and B are essentially added to the structure of the image sensor.
  • the optical filter of the present invention can be applied to R, G, B of such a CMOS image sensor. 8 to 11, 19 to 21, and 22 to 24 are all applicable to the CMOS image sensor, but for easy application to a semiconductor process, FIGS. 19 to 21, and / or It may be effective to apply the schemes of FIGS. 22-24.
  • an isolation region 360 exists between the photodetection regions 350 and various electrode lines 345 are formed in the intermediate dielectric region 340.
  • R, G, and B filter regions 320 are formed thereon, and microlenses 330 are formed on the R, G, and B filter regions 320.
  • various electrode lines 345 are formed in the dielectric region 340.
  • An isolation region 460 exists between the photodetection regions 450 thereon.
  • R, G, and B filter regions 420 are formed on the photodetection regions 450, and microlenses 430 are formed on the R, G, and B filter regions 420.
  • 29 is a conceptual diagram illustrating a situation of integration with a CMOS image sensor and a spectroscopic sensor according to an embodiment of the present invention.
  • FIG. 30 is a cross-sectional view taken along line II ′ of FIG. 29.
  • CMOS image sensor region A and the spectral sensor region B will be described separately.
  • an isolation region 560 is present between the photodetection regions 550, and various electrode lines 545 are formed in the intermediate dielectric region 540.
  • R, G, and B filter regions 520 are formed thereon, and microlenses 530 are formed on the R, G, and B filter regions 520 thereon.
  • an isolation region 590 is present between the photodetection regions 580, and various electrode lines 545 are formed in the intermediate dielectric region 540.
  • the spectroscopic sensor filters F1, F2, ... are disposed on the intermediate dielectric region 540.
  • the spectroscopic sensor filters F1, F2, ... are applicable to various filters which are not particularly limited, having a different wavelength or structure than that of the R G B color filter of the CMOS image sensor.
  • the spectroscopic sensor filter of FIG. 1 is illustrated in FIG. 30 but is not limited thereto.
  • examples of other possible filters include diffraction gratings, prismatics, Fabry-Perot type resonant filters, plasmonic filters including metal nanostructure arrays or metal nanohole arrays, silicon nanowire based filters, absorption filters, resonant waveguide resonant mode filters. , Optical interference type spectral filter using integrated optics.
  • any type of spectral filters disclosed in 2016-0106416, 2016-0106422, 2016-0110789, 2016-0110799, filed by the same applicant, may be applied to the filters of the spectral image sensor region B.
  • Each spectral filter is designed to obtain information of the corresponding wavelength band.
  • the R, G, B filters are implemented to ensure the information of the wavelength region corresponding to each color of the visible light, whereas each spectral filter is in the visible light or
  • each spectral filter is in the visible light or
  • the visible light may be configured to ensure information of the wavelength band of the infrared ultraviolet light, etc.
  • the visible light it is possible to implement a variety of wavelength band of information that can be obtained by each spectral filter.
  • the R filter is a filter for acquiring information of a red wavelength region (about 625 to 750 nm), but each spectral filter of the spectral image sensor region B has a wavelength band in the range of several nm to several tens of nm. It is possible to seperate the information.
  • separate microlenses 530 may or may not be formed on the spectroscopic sensor filters F1, F2,..., Formed in the spectroscopic sensor region B. In FIG. 30, the microlenses are not formed.
  • a separate layer such as a planarization film, a protective film, a natural oxide film, may be added between the spectroscopic sensor filters F1, F2,... And the intermediate dielectric region 540, and the spectroscopic sensor filters F1 may be added.
  • a passivation film such as a silicon dioxide film, a silicon nitride film, a dielectric film, on top of F2, .
  • the wavelength range of the photodetecting diodes PDB which are the photodetection regions Pb, is about 300 nm to 1000 nm in the spectral sensor region B, and the entire region may be filtered in units of several nm or several tens of nm.
  • Configure the spectral filters to If the spectral filters are configured in 10 nm units, 70 spectral filters can be configured to filter different wavelengths from 300 nm to 310 nm, 310 nm to 320 nm, ..., and 990 nm to 1000 nm.
  • the spectral filters of the spectral sensor region B may be configured to filter wavelengths of the infrared region, and may be configured to filter spectral filters that can be filtered from 700 nm to 1000 nm in units of several nm. In this case, if each spectral filter is configured in 5nm units, it is possible to configure 60 spectral filters that filter different wavelengths at 700 nm to 705 nm, 705 nm to 710 nm, ..., 995 nm to 1000 nm.
  • FIG. 31 is a cross-sectional view illustrating another modification of FIG. 30.
  • a separate microlens 530 is formed on the spectroscopic sensor filters F1, F2,...
  • the spectral sensor filters F1, F2, ... and the microlenses 530 are shown to be in direct contact, but in an actual implementation, an insulating layer, a planarization film, a passivation film, a protective film, etc. are added in the middle. It is also possible.
  • the pixel sizes of the spectroscopic sensor filters F1, F2,... Formed in the spectroscopic sensor region B are the pixels of the R, G, B filter region 520. It shows the situation different from the size. This means that each of the photodetection areas PDB of the spectroscopic sensor filters F1, F2, ... can be manufactured in a different size than the photodetection areas PDAA of the R, G, B filter areas 520. .
  • the other size means that the size of the area to which light is incident is configured differently.
  • the width D2 of each photodetection area PDB of the spectroscopic sensor filters F1, F2,... Is the width D1 of each photodetection area PDA of the image sensor area A.
  • FIG. ) Is shown wider.
  • the spectral sensor filters (F1, F2, ...) it is possible to reduce the relative amount of light because it filters the subdivided wavelength range than the R, G, B filter, the effect that can be compensated for a large part with the configuration as shown in FIG. There is.
  • the size of the light incident area of each photodetection area PDB of the spectroscopic sensor filters F1, F2,... Is the photodetection area of the R, G, B filter area 520.
  • the size of each photodetection area PDB of the spectroscopic sensor filters F1, F2, ... is R, G, It is also possible to comprise smaller than the size of the photodetection area A of the B filter area 520.
  • each of the photodetection areas PDB of the spectral sensor filters F1, F2,... Is a photodetection area of the R, G, B filter area 520.
  • the cross-sectional thickness L2 of each photodetection area PDB of the spectroscopic sensor filters F1, F2, ... is a cross section of the photodetection area PDA of the R, G, B filter area 520. The case where it is larger than the thickness L1 is shown.
  • the cross-sectional thickness L2 of each photodetection area PDB of the spectroscopic sensor filters F1, F2,... Is the photodetection area of the R, G, B filter area 520.
  • the cross-sectional thickness L1 of the PDA is larger than an example
  • the cross-sectional thickness D2 of the spectral detection region PDB is the light detection region (R) of the R, G, B filter regions 520. It is also possible to comprise smaller than the cross-sectional thickness D1 of PDA).
  • FIG. 34 is a schematic view of a portion of the present invention for explaining a situation of integration with a CMOS image sensor and a spectroscopic sensor
  • FIG. 35 is a cross-sectional view taken along line II ′ of FIG. 34.
  • the unit pixels of the spectroscopic sensor are disposed together with the corresponding pixels of the CMOS image sensor.
  • 34 shows a situation in which the F1 unit spectral filter is arranged in succession to each pixel of RGB, and the F2 unit spectral filter is arranged in succession to each next RGB pixel.
  • CMOS image sensor region A and the spectral sensor region B will be described separately.
  • an isolation region 660 is present between the photodetection regions 6550 and various electrode lines 645 are formed in the intermediate dielectric region 640.
  • R, G, and B filter regions 620 are formed thereon, and microlenses 630 are formed on the R, G, and B filter regions 620.
  • an isolation region 690 is present between the photodetection regions 680, and various electrode lines 645 are formed in the intermediate dielectric region 640.
  • 36 is a diagram illustrating a unit pixel of a CMOS image sensor and a part of unit pixels of a hyperspectral image sensor according to another exemplary embodiment of the present invention.
  • Hyper-spectral image sensors are devices that sense several (comparatively narrow) wavelength parts or wavelength bands of the total hyper-spectrum emitted or absorbed from an object. It is known that the wavelength band to be measured or observed is narrow by using the principle of a general spectrometer.
  • the hyper-spectral image sensor can be used in combination with a CMOS image sensor.
  • the areas labeled R, G, and B represent color filters for filtering R, G, and B of the CMOS image sensor, and the area labeled H, the filter area for sensing a hyperspectral image. to be.
  • the H filter region for example, a narrow region of the infrared region can be designated so that hyperspectral data different from R, G, and B can be secured in this filter region.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

La présente invention concerne un filtre optique comprenant : une première région de filtre ayant une première couche ayant un premier indice de réfraction, et une pluralité de premières nanostructures métalliques dans la première couche; et une seconde région de filtre ayant une seconde couche ayant un second indice de réfraction, et une pluralité de secondes nanostructures métalliques dans la seconde couche, le premier indice de réfraction et le second indice de réfraction étant différents l'un de l'autre.
PCT/KR2017/008259 2016-08-02 2017-07-31 Filtre optique, dispositif optique et procédé de production de système optique Ceased WO2018026156A1 (fr)

Priority Applications (2)

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CN201780048831.8A CN109564310A (zh) 2016-08-02 2017-07-31 光滤波器、光器件及制造光滤波器的方法
US16/069,612 US11156752B2 (en) 2016-08-02 2017-07-31 Optical filter including metal nanostructures, optical device including metal nanostructures, and method for producing optical filter including metal nanostructures

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KR10-2016-0098456 2016-08-02
KR20160098456 2016-08-02
KR1020170053893A KR102294845B1 (ko) 2016-08-02 2017-04-26 광학필터, 광학 디바이스, 및 광학필터의 제조방법
KR10-2017-0053893 2017-04-26

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CN120085403A (zh) * 2023-11-29 2025-06-03 京东方科技集团股份有限公司 一种滤光片及其制备方法、图像传感器及显示装置

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CN120085403A (zh) * 2023-11-29 2025-06-03 京东方科技集团股份有限公司 一种滤光片及其制备方法、图像传感器及显示装置

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