WO2018012654A1 - Introduction device for manuf+acturing silicon semiconductor ingot, and doping method - Google Patents

Abstract

An introduction device for manufacturing a silicon semiconductor ingot according to the present invention includes: a body part in which a lower portion thereof is open and an accommodating space is formed inside; and a door part that is provided in the opened lower portion of the body part, and can be selectively opened and closed, wherein a contamination-resistant coating is formed on at least a portion of the inner surface of the body part and the inner surface of the door part, which are exposed toward the accommodating space, and a heat-resistant coating is formed on the outer surface of the door part. In addition, a doping method according to the present invention comprises the steps of: stacking a dopant layer made of a dopant in an accommodating space of an introduction device that includes a body part in which a lower portion thereof is open and the accommodating space is formed inside, and a door part that is provided in the opened lower portion of the body part and can be selectively opened and closed; stacking a cover layer, made of a solid semiconductor raw material, on the dopant layer; placing the introduction device over a fused semiconductor raw material, at a preset height; and introducing the dopant layer and the cover layer, while maintaining the stacked state, onto the fused semiconductor raw materials by opening the door part of the introduction device.

Description

Dosing device and doping method for silicon semiconductor ingot production

The present invention relates to an input device and a doping method for manufacturing a silicon semiconductor ingot, and more particularly, to an input device and a doping method for manufacturing a silicon semiconductor ingot capable of minimizing volatilization of a dopant and greatly shortening a process time.

Silicon semiconductors are widely used in various industrial fields, and their importance is increasing. Such a silicon semiconductor is doped with an additive material called a dopant, and the electrical properties are determined by the type and amount thereof.

In Fig. 1, a conventional doping process is shown.

As shown in FIG. 1, in the conventional doping process, the semiconductor raw material S is melted in the crucible 10, and then a dopant input device in which the dopant d is accommodated is placed on the top of the crucible 10.

At this time, the dopant input device is composed of a seating portion (5) on which the dopant is seated, and a shielding portion (7) for shielding the upper portion of the seating portion (5), The play is formed between the side plates.

As dopants, ascenic (As) and the like are generally used, and since they have high volatility, they are easily vaporized. Therefore, the dopant seated on the seating portion 5 is moved through the gap formed between the side plate of the seating portion 5 and the side plate of the shielding portion 7 in the vaporized state, by the air curtain formed around the dopant input device The semiconductor raw material S contained in the crucible 10 is reached and gradually doped.

However, in the conventional doping process, the doping efficiency is not only greatly reduced, but also a long process time, there is a problem that the yield is low. In addition, a large amount of vaporized dopant is adsorbed on the inner surface of the dopant input device, the amount of loss is considerable, and accordingly maintenance is required.

In addition, a number of problems have been pointed out, such as damage to the health of workers by the adsorption of harmful components.

Therefore, there is a need for a method for solving such problems.

The present invention has been made to solve the above-mentioned problems of the prior art, and has an object to provide a doping method capable of quickly doping semiconductor raw materials.

And it has a purpose to provide a doping method that can minimize the loss of dopant, and improve the doping efficiency.

The objects of the present invention are not limited to the above-mentioned objects, and other objects that are not mentioned will be clearly understood by those skilled in the art from the following description.

The silicon semiconductor ingot production device of the present invention for achieving the above object, the lower portion is opened, the body portion to form a receiving space therein and the lower portion is provided in the opened lower portion of the body portion, and optionally includes a door portion that can be opened and closed A stain resistant coating is formed on at least a portion of the inner surface of the body portion and the inner surface of the door portion exposed to the receiving space.

The fouling resistant coating may be formed of a Ti coating.

In addition, the door portion may be formed thicker than the body portion.

In addition, the doping method of the present invention for achieving the above object, the lower portion is opened, the body portion to form a receiving space therein, and the lower portion is provided in the opened lower portion of the body portion, the input including a selectively openable door portion Laminating a dopant layer made of a dopant in the receiving space of the device, laminating a cover layer made of a solid semiconductor raw material on the dopant layer, and placing the input device on a molten semiconductor raw material at a predetermined height. And opening the door of the dosing device so that the dopant layer and the cover layer are placed on the molten semiconductor raw material while maintaining the stacked state.

In addition, before the step of stacking the dopant layer, further comprising the step of laminating a bottom layer of a solid semiconductor raw material in the receiving space, the step of laminating the dopant layer, laminating the dopant layer on the bottom layer It can be done.

The cover layer may be formed thicker than the bottom layer.

In addition, the solid semiconductor raw material constituting the cover layer may have a second particle size larger than the first particle size of the solid semiconductor raw material constituting the bottom layer.

The cover layer may be a mixture of a solid semiconductor raw material having a first particle size and a solid semiconductor raw material having a second particle size.

In the dopant layer, a solid semiconductor raw material may be disposed at the periphery of the dopant forming the dopant layer.

In order to solve the above problems, the dosing device and the doping method for manufacturing a silicon semiconductor ingot of the present invention have the following effects.

First, since the dopant is directly injected into the molten semiconductor raw material, there is an advantage that can greatly increase the doping efficiency, as well as significantly reduce the process time.

Second, there is an advantage that can minimize the loss due to the volatilization of the dopant.

Third, it is possible to minimize the absorption of the dopant in the input device, it is possible to reduce the effort required for maintenance and to prevent the health of the worker is impaired.

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

1 illustrates a conventional doping process;

2 is a view showing the structure of an input device for manufacturing a silicon semiconductor ingot according to a first embodiment of the present invention;

3 is a view showing a lamination of a dopant layer and a cover layer in the doping method according to the first embodiment of the present invention;

4 is a view showing a state in which a dosing method for manufacturing a silicon semiconductor ingot is placed on a crucible in the doping method according to the first embodiment of the present invention;

FIG. 5 is a view showing a state in which a dopant layer and a cover layer are introduced into a molten semiconductor raw material by opening a door of a dosing device for manufacturing a silicon semiconductor ingot in the doping method according to the first embodiment of the present invention; FIG.

6 is a view showing a dopant layer doped in a molten semiconductor raw material in the doping method according to the first embodiment of the present invention;

7 is a view showing a stacking of a bottom layer, a dopant layer and a cover layer in the doping method according to the second embodiment of the present invention;

8 is a view showing a lamination of a bottom layer, a dopant layer and a cover layer in the doping method according to the third embodiment of the present invention;

9 is a view showing a stacking of a bottom layer, a dopant layer and a cover layer in the doping method according to the fourth embodiment of the present invention; And

10 is a view showing a stacking of a bottom layer, a dopant layer and a cover layer in the doping method according to the fifth embodiment of the present invention.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description of this embodiment, the same name and the same reference numerals are used for the same configuration and additional description thereof will be omitted.

2 is a view showing the structure of an input device 100 for manufacturing a silicon semiconductor ingot according to a first embodiment of the present invention.

As shown in FIG. 2, the input device 100 for manufacturing a silicon semiconductor ingot according to the first embodiment of the present invention includes a body portion 102 and a door portion 110.

The body portion 102 has a lower opening and is a component forming an accommodation space 105 therein. The accommodating space 105 may then contain a solid semiconductor raw material including a dopant. This will be described later.

The door part 110 is provided at an opened lower portion of the body part 102 and is formed to be selectively opened and closed. Therefore, the door 110 may open or shield the lower portion of the receiving space 105 in accordance with the opening and closing. When the door part 110 is opened, the dopant and the solid semiconductor raw material contained in the accommodation space 105 fall.

At this time, in the present embodiment, at least a portion of the inner surface of the body portion 102 exposed to the receiving space 105 side, and the inner surface of the door portion 110 may be formed with a stain-resistant coating (120a).

As such, the reason for forming the fouling resistant coating 120a on the inner surface of the body portion 102 and the inner surface of the door portion 110 is that the body portion 102 as the dopant contained in the accommodating space 105 is vaporized. This is to prevent adsorption on the inner surface and the inner surface of the door unit 110.

In addition, when the silicon raw material is introduced into the receiving space 105 together with the dopant, to prevent metal impurities contamination of the raw material that may occur due to wear of the inside of the input device 100 thereby.

Various materials may be used as the material of the pollution-resistant coating (120a), in the present embodiment was to be Ti coating. In the present exemplary embodiment, an asnic (As) is used as a dopant, and in the case of Ti coating, the reactivity with the acenic is low, so that the vaporized acenic may be effectively prevented from being adsorbed.

In this embodiment, the door part 110 may be formed thicker than the body part 102. The reason for doing this is to minimize the transfer of heat into the receiving space 105 when the silicon semiconductor ingot manufacturing input device 100 is placed on the crucible in which the semiconductor raw materials are melted. That is, the door part 110 blocks heat transfer to prevent the dopant from easily evaporating.

Hereinafter, a method of doping a semiconductor raw material using such a silicon semiconductor ingot production input device 100 will be described.

FIG. 3 is a view illustrating a dopant layer L ₁ and a cover layer L ₂ stacked in the doping method according to the first embodiment of the present invention.

As shown in FIG. 3, first, a dopant layer (L ₁ ) made of a dopant (d) is deposited in a receiving space of the silicon semiconductor ingot manufacturing device 100, and the solid on the dopant layer (L ₁ ). The step of laminating a cover layer (L ₂ ) made of the semiconductor raw material (s) is performed.

The dopant layer L ₁ includes a dopant d having a predetermined particle size and is provided under the cover layer L ₂ . The cover layer L ₂ includes a solid semiconductor raw material s having a predetermined particle size.

In this embodiment, the dopant (d) is considered to be acenic, and the semiconductor raw material is silicon. That is, the raw material s of the solid semiconductor forming the cover layer L ₂ is obtained by solidifying silicon and covering the dopant d.

And was that in this embodiment the dopant layer (L ₁₎ is further disposed a semiconductor raw material (s) of the solid in the rim portion of the dopant (d) forming the dopant layer (L _1). This is for the dopant d to be completely surrounded by the solid semiconductor raw material s.

The reason for doing this is to minimize vaporization of the dopant d, and the solid semiconductor raw material s can block both the upper and side portions of the dopant d so as not to be exposed to the outside.

4 is a view showing a state in which the dosing method 100 for manufacturing a silicon semiconductor ingot is placed on the crucible 10 in the doping method according to the first embodiment of the present invention, and FIG. 5 is a first embodiment of the present invention. In the dopant doping method of a semiconductor raw material according to the embodiment, the semiconductor raw material (S) in which the dopant layer (L ₁ ) and the cover layer (L ₂ ) are melted by opening the door part 110 of the dosing device 100 for manufacturing a silicon semiconductor ingot. This figure shows how it was put into.

4 and 5, after laminating the dopant layer L ₁ and laminating the cover layer L ₂ , on the molten semiconductor raw material S accommodated in the crucible 10. Positioning the dosing device 100 at a predetermined height, and opening the door part 110 of the dosing device 100 to maintain a lamination state of the dopant layer L ₁ and the cover layer L ₂ . Steps to be put on the molten semiconductor raw material (S) in the state is performed respectively.

Specifically, the crucible 10 is accommodated in the molten state the raw material (S) of the semiconductor. The molten semiconductor raw material S in this state is non-conductive and may be conductive through the addition of the dopant d.

Therefore, after the dopant layer L ₁ and the cover layer L ₂ are stacked, the dosing device 100 is placed at a predetermined height on the top of the crucible 10, and then the door part 110 of the dosing device 100. ), The dopant layer L ₁ and the cover layer L ₂ are introduced into the molten semiconductor raw material S.

At this time, the dopant layer (L ₁ ) and the cover layer (L ₂ ) fall on the molten semiconductor raw material (S) while maintaining a laminated state, the molten semiconductor raw material (S) has a viscosity and thus The dopant layer L ₁ and the cover layer L ₂ gradually sink from the surface of the molten semiconductor raw material S as shown in FIG. 6.

In this process, the dopant (d) is melted by high temperature so that the molten semiconductor raw material (S) is doped. The solid semiconductor raw material s included in the dopant layer L ₁ and the cover layer L ₂ is substantially the same material as the semiconductor raw material S melted in the crucible 10 and thus melted by high temperature. And mixed.

That is, in the present invention, until the dopant d is mixed in the molten semiconductor raw material S, the solid semiconductor raw material s included in the dopant layer L ₁ and the cover layer L ₂ is a dopant d. ), And the dopant (d) is injected into the semiconductor raw material (S) directly melted in a solid state, thereby greatly improving the doping efficiency as compared with the related art.

In the related art, since the doping is performed while the dopant (d) is vaporized, the process takes a long time and a large amount of loss, which is inefficient, but the present invention can solve these problems.

Hereinafter, other embodiments of the present invention will be described.

FIG. 7 is a view illustrating a lamination of a bottom layer L ₃ , a dopant layer L ₁ , and a cover layer L ₂ in the dopant doping method according to the second embodiment of the present invention.

FIG case of the second embodiment of the present invention in Figure 7, the first embodiment and likewise the dopant layer (L ₁₎ and a cover layer that the (L ₂₎ is laminated is equal to one, and the dopant layer (L ₁₎ The difference is that the bottom layer (L ₃ ) is further laminated to the bottom of the.

Like the cover layer (L ₂ ), the bottom layer (L ₃ ) includes a solid semiconductor raw material (s), and is provided in the form of surrounding the dopant (d) together with the cover layer (L ₂ ).

The reason for further forming a bottom layer (L ₃₎ in the present embodiment, if after the input device 100 is to be placed on the crucible, and a from the lower row to the dopant (d) in order to prevent the direct transfer into .

That is, the bottom layer (L ₃ ) can block the transfer of heat to the dopant (d) can significantly reduce the amount of vaporization of the dopant (d).

FIG. 8 is a view illustrating a lamination of a bottom layer L ₃ , a dopant layer L ₁ , and a cover layer L ₂ in the doping method according to the third embodiment of the present invention.

In the third embodiment of the present invention illustrated in FIG. 8, the bottom layer L ₃ , the dopant layer L ₁ , and the cover layer L ₂ are stacked in the same manner as in the second embodiment. However, the present embodiment is different in that the cover layer (L ₂ ) is formed thicker than the bottom layer (L ₃ ).

That is, in the present embodiment, the thickness of the cover layer (L ₂ ) is made thicker, thereby minimizing the possibility that the cover layer (L ₂ ) may be dispersed due to the impact falling on the crucible and the dopant (d) may be exposed. have. The cover layer (L ₂ ) is because the solid semiconductor raw material (s) forms a plurality of layers, because even if slightly dispersed, the layer formed on top can fill the gap.

FIG. 9 is a view illustrating a lamination of a bottom layer L ₃ , a dopant layer L ₁ , and a cover layer L ₂ in the doping method according to the fourth embodiment of the present invention.

In the fourth embodiment of the present invention illustrated in FIG. 9, the bottom layer L ₃ , the dopant layer L ₁ , and the cover layer L ₂ are stacked as in the _second and third embodiments. .

However, in the present exemplary embodiment, the solid semiconductor raw material s ₁ constituting the cover layer L ₂ has a particle size larger than the first particle size of the solid semiconductor raw material s ₂ constituting the bottom layer L ₃ . The difference is that it has two granularities.

That is, in the present exemplary embodiment, the particle size of the solid semiconductor raw material s ₁ constituting the cover layer L ₂ is formed to be larger, thereby more effectively preventing the dopant d from being exposed.

In addition, the solid semiconductor raw material s ₂ constituting the bottom layer L ₃ is formed with a relatively small particle size, and thus may be rapidly melted when it is introduced into the crucible.

FIG. 10 is a view illustrating a lamination of a bottom layer L ₃ , a dopant layer L ₁ , and a cover layer L ₂ in the doping method according to the fifth embodiment of the present invention.

In the case of the fifth embodiment of the present invention shown in FIG. 10, the bottom layer L ₃ , the dopant layer L ₁ , and the cover layer L ₂ are laminated in the same manner as in the _second to fourth embodiments. .

However, the present embodiment differs in that the cover layer L ₂ is mixed with a solid semiconductor raw material s ₁ having a first particle size and a solid semiconductor raw material s ₂ having a second particle size.

That is the case of this embodiment, because the cover layer (L ₂₎ is the first size to a second size for having the semiconductor raw material (s ₂₎ of the solid in between the solid semiconductor raw material (s ₁₎ having location, the first granularity The eggplant can effectively fill the voids of the solid semiconductor raw material s ₁ , thereby more effectively preventing the dopant d from being exposed.

As described above, a preferred embodiment according to the present invention has been described, and the fact that the present invention can be embodied in other specific forms in addition to the above-described embodiments without departing from the spirit or scope thereof has ordinary skill in the art. It is obvious to them. Therefore, the above-described embodiments should be regarded as illustrative rather than restrictive, and thus, the present invention is not limited to the above description and may be modified within the scope of the appended claims and their equivalents.

Claims (9)

A lower portion of which is opened and forms a receiving space therein; And A door part provided at an opened lower portion of the body part and selectively opening and closing; Including; At least a portion of the inner surface of the body portion exposed to the receiving space side and the inner surface of the door portion is a silicon semiconductor ingot manufacturing input device formed with a stain-resistant coating. The method of claim 1, The contamination-resistant coating is a silicon semiconductor ingot production device is formed by Ti coating. The method of claim 1, The door part is a silicon semiconductor ingot manufacturing device is formed thicker than the body portion. Stacking a dopant layer made of a dopant in the accommodation space of the input device including a body portion having a lower opening, a housing portion formed therein, and a door portion provided at an opened lower portion of the body portion, and selectively opening and closing; ; Stacking a cover layer made of a solid semiconductor raw material on the dopant layer; Placing the input device on a molten semiconductor raw material at a predetermined height; And Opening the door part of the feeding device so that the dopant layer and the cover layer are put on the molten semiconductor raw material while maintaining the stacked state; Doping method comprising a. The method of claim 4, wherein Prior to depositing the dopant layer, Laminating a bottom layer made of a solid semiconductor raw material in the receiving space, Laminating the dopant layer, A doping method in which the dopant layer is laminated on the bottom layer. The method of claim 5, The doping method so that the cover layer is formed thicker than the bottom layer. The method of claim 5, The solid semiconductor raw material constituting the cover layer has a second particle size larger than the first particle size of the solid semiconductor raw material constituting the bottom layer. The method of claim 7, wherein The cover layer, A doping method in which a solid semiconductor raw material having a first particle size and a solid semiconductor raw material having a second particle size are mixed. The method of claim 4, wherein The dopant layer, And a solid semiconductor raw material is disposed at the periphery of the dopant forming the dopant layer.

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